Preparation method of nanocrystalline silicon carbide coating on inner wall of small-diameter thin tube

Abstract

The invention relates to a preparation method of a nanocrystalline silicon carbide coating on the inner wall of a small-diameter thin tube, and belongs to the technical field of preparation of silicon carbide coatings. According to the performance prediction model of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter thin tube, predicting the mechanical property of the current nanocrystalline silicon carbide coating on the inner wall of the small-diameter thin tube, and finally evaluating the mechanical property of the current nanocrystalline silicon carbide coating on the inner wall of the small-diameter thin tube. And the working parameter characteristics of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter thin tube in the preparation process are dynamically adjusted according to the evaluation result. By optimizing the voltage parameters, the nanoscale silicon carbide coating with the thickness remarkably increased, uniform distribution and excellent mechanical performance is prepared, and the method can be applied to improvement of the hardness of the inner wall of a slender pipe and has important value in future industrial application such as nuclear fuel cladding and the like.

Description

Technical Field

[0001] This invention relates to the field of nanocrystalline silicon carbide coating preparation technology, and in particular to a method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube. Background Technology

[0002] Nanocrystalline silicon carbide coatings have attracted widespread attention in the scientific and engineering communities due to their remarkable properties, including high strength, excellent thermal stability, mechanical strength, good chemical stability, and oxidation resistance. In recent years, this coating has been widely used as a protective material in various fields, such as cutting tools, thermal printheads, and mechanical components, where it is highly favored for extending coating lifespan.

[0003] Currently, silicon carbide coatings are mainly prepared using various processes such as physical vapor deposition (PVD) and chemical vapor deposition (CVD). The preparation of hydrophilic silicon carbide coatings is typically based on PVD sputtering technology. Research by A. Ordine et al. showed that treating AISI 304 stainless steel with a silicon carbide coating using magnetron sputtering improved its corrosion resistance by more than 50 times compared to the uncoated sample. Gao Hong's team successfully prepared silicon carbide coatings for 316 stainless steel and Zircaloy-4 plates at 400℃ using magnetron sputtering technology. Experimental data showed that this silicon carbide-coated material not only had a significantly reduced hydrogen permeability but also significantly improved high-temperature oxidation resistance. Another research team used CVD to prepare dense nanocrystalline silicon carbide films on zirconium alloy surfaces. In the early stages of plasma-enhanced chemical vapor deposition (PECVD) technology, mixtures of silane and methane, as well as silane and acetylene, were used. However, due to the toxicity and serious explosion risks of silanes, organosilicon materials are currently preferred for silicon carbide coating preparation due to their superior stability. For example, tetramethylsilane (Si(CH3)4, abbreviated as TMS) is widely used as a precursor gas in plasma-enhanced chemical vapor deposition (PECVD) for silicon carbide coating preparation. The resulting high-density films exhibit many advantages: uniform composition, excellent shape retention, low surface roughness, and excellent mechanical properties—including excellent substrate adhesion, high hardness, and good wear resistance. However, the main limitation of these technologies is the high substrate temperature during the process. Due to the difference in thermal expansion coefficients between the silicon carbide coating and the substrate material, defects are easily formed due to high stress. In addition, for 316L stainless steel substrates, the chemical composition and structure change significantly when the temperature exceeds 500°C. In industrial applications with high aspect ratios, such as nuclear fuel cladding tubes, implementing plasma coating technology on the inner wall of 316L stainless steel tubes has always been a major challenge for the industry, especially for high aspect ratio tubes like nuclear fuel cladding. However, achieving a uniform and effective treatment process on the inner wall of small-diameter pipes, enabling them to withstand various exposure environments, still presents many challenges. Summary of the Invention

[0004] This invention overcomes the shortcomings of the prior art and provides a method for ocean data mapping based on multimodal sensing.

[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0006] The first aspect of this invention provides a method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube, comprising the following steps:

[0007] Different temperature conditions were set, and the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube was tested in the long and thin tube based on the different temperature conditions. The Si-C bonding amount of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube was obtained, and a knowledge graph was constructed.

[0008] To obtain the working parameter characteristics of the nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary during the preparation process;

[0009] A performance prediction model for the nanocrystalline silicon carbide coating on the inner wall of a small-diameter tube is constructed by combining the knowledge graph and the working parameter characteristics of the coating during the preparation process.

[0010] The mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube are predicted based on the performance prediction model.

[0011] The mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary were evaluated, and the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary were dynamically adjusted during the preparation process based on the evaluation results.

[0012] Furthermore, in a method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube, different temperature conditions are set, and the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube is tested inside a slender tube based on the different temperature conditions to obtain the Si-C bonding amount of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube. Specifically, this includes:

[0013] Different temperature conditions were set, and a nanocrystalline silicon carbide coating was prepared on the inner surface of a slender tube with an inner diameter of 10 mm and a length of 500 mm using a TMS / Ar half-wave plate. The deposition of the nanocrystalline silicon carbide coating was tested under different temperature conditions.

[0014] At different temperatures, the deposition of the nanocrystalline silicon carbide coating was detected and calculated using field emission scanning electron microscopy and atomic force microscopy to obtain the deposition rate of the nanocrystalline silicon carbide coating on the inner wall of a small-diameter tube.

[0015] The nanocrystalline silicon carbide coating on the inner wall of the small-diameter tube during the current deposition process was analyzed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy to obtain the Si-C bonding amount of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter tube.

[0016] Furthermore, in a method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube, a knowledge graph is constructed, specifically including:

[0017] A knowledge graph is constructed, and the correlation between the deposition rate of nanocrystalline silicon carbide coating on the inner wall of a small-diameter tube and the Si-C bonding amount is established. The correlation is then used as the edge of an undirected isomorphic graph.

[0018] Temperature data, deposition rate, and Si-C bonding amount are used as graph nodes. The graph nodes are connected according to the aforementioned relationships to construct an undirected heterogeneous graph. The undirected heterogeneous graph is then input into the knowledge graph for knowledge representation.

[0019] Furthermore, in a method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube, a performance prediction model for the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube is constructed by combining the knowledge graph and the working parameter characteristics of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube during the preparation process. Specifically, this includes:

[0020] The working temperature information of the nanocrystalline silicon carbide coating on the inner wall of the current small-diameter capillary during the preparation process is obtained, and the working temperature information of the nanocrystalline silicon carbide coating on the inner wall of the current small-diameter capillary during the preparation process is input into the knowledge graph for analysis;

[0021] By analysis, the Si-C bonding amount of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary is obtained, the working parameter characteristics of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary during the preparation process are set, and the working parameter characteristics are used as model input to set performance evaluation index data.

[0022] The Si-C bonding amount is evaluated based on the performance evaluation index data to obtain the performance data of the nanocrystalline silicon carbide coating on the inner wall of the small diameter tube, and a performance prediction model of the nanocrystalline silicon carbide coating on the inner wall of the small diameter tube is constructed based on a deep neural network.

[0023] The performance data of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter tube is used as the model output, and the performance prediction model of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter tube is learned according to the relationship between the model input and the model output.

[0024] Furthermore, in a method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube, the mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube are predicted according to a performance prediction model, specifically including:

[0025] To obtain the working parameter characteristics of the nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary during the preparation process;

[0026] The working parameter characteristics of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube during the preparation process are input into the performance prediction model of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube for prediction.

[0027] The mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube are obtained through prediction.

[0028] Furthermore, in a method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary, the mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary are evaluated, specifically including:

[0029] Set a qualified mechanical performance characteristic threshold, and determine whether the mechanical performance characteristics of the nanocrystalline silicon carbide coating on the inner wall of the current small-diameter capillary tube are greater than the qualified mechanical performance characteristic threshold.

[0030] When the mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of the current small-diameter capillary tube are greater than the qualified mechanical properties threshold, a qualified evaluation result is generated.

[0031] When the mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of the current small-diameter tube are not greater than the qualified mechanical properties threshold, an unqualified evaluation result is generated.

[0032] Furthermore, in a method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube, the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube are dynamically adjusted according to the evaluation results. Specifically, this includes:

[0033] When the evaluation result is unqualified, the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small diameter tube are re-initialized during the preparation process.

[0034] Based on the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube during the preparation process, it is estimated whether the evaluation result will continue to be unqualified. If so, the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube during the preparation process will be reset.

[0035] If the evaluation result is not unqualified, output the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small diameter tube during the preparation process, and control it according to the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small diameter tube during the preparation process.

[0036] A second aspect of the present invention provides a system for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube, comprising a memory and a processor. The memory includes a method program for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube. When the method program for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube is executed by the processor, the steps of the method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube as described in any one of the present invention are implemented.

[0037] A third aspect of the present invention provides a computer-readable storage medium, including a method program for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube, wherein when the method program for preparing the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube is executed by a processor, the steps of the method for preparing the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube as described in any one of the present invention are implemented.

[0038] This invention addresses the shortcomings of the prior art and has the following beneficial effects:

[0039] This invention sets different temperature conditions and tests the nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube inside the tube under these conditions. The Si-C bonding amount of the coating is obtained, a knowledge graph is constructed, and the working parameter characteristics of the coating during the preparation process are obtained. Then, combining the knowledge graph and these working parameter characteristics, a performance prediction model for the coating is constructed. Based on this model, the mechanical properties of the coating are predicted. Finally, the mechanical properties are evaluated, and the working parameter characteristics are dynamically adjusted based on the evaluation results. This invention utilizes a TMS / Ar half-wave plate to prepare an amorphous silicon carbide coating on the inner surface of a slender tube with an inner diameter of 10 mm and a length of 500 mm. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) analyses show that the Si-C bonding amount significantly increases with the increase of the deposition rate Vs. By optimizing the voltage parameters, a nanoscale silicon carbide coating with significantly increased thickness, uniform distribution, and excellent mechanical properties is prepared. This coating can be used to improve the hardness of the inner wall of slender tubes, which has important value for future industrial applications such as nuclear fuel cladding. Attached Figure Description

[0040] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other embodiments can be obtained from these drawings without creative effort.

[0041] Figure 1 A flowchart illustrating the preparation method of a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube is shown.

[0042] Figure 2 A schematic diagram of a system for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary is shown. Detailed Implementation

[0043] To better understand the above-mentioned objectives, features, and advantages of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that, unless otherwise specified, the embodiments and features described in these embodiments can be combined with each other.

[0044] Many specific details are set forth in the following description in order to provide a full understanding of the invention. However, the invention may also be practiced in other ways different from those described herein, and therefore the scope of protection of the invention is not limited to the specific embodiments disclosed below.

[0045] like Figure 1 As shown, this paper provides a method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube, including the following steps:

[0046] Different temperature conditions were set, and the nanocrystalline silicon carbide coating on the inner wall of a small-diameter tube was tested inside a slender tube based on the different temperature conditions. The Si-C bonding amount of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter tube was obtained, and a knowledge graph was constructed.

[0047] To obtain the working parameter characteristics of the nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary during the preparation process;

[0048] A performance prediction model for the nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube was constructed by combining a knowledge graph with the working parameter characteristics of the coating during the preparation process.

[0049] The mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of small-diameter capillary tubes are predicted based on the performance prediction model.

[0050] The mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of small-diameter capillary tubes were evaluated, and the working parameters of the nanocrystalline silicon carbide coating on the inner wall of small-diameter capillary tubes were dynamically adjusted according to the evaluation results.

[0051] It should be noted that this invention prepared an amorphous silicon carbide coating on the inner surface of a slender tube with an inner diameter of 10 mm and a length of 500 mm using a TMS / Ar half-wave plate. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) analysis showed that the Si-C bonding amount significantly increased with the increase of the deposition rate Vs. By optimizing the voltage parameters, a nanoscale silicon carbide coating with significantly increased thickness, uniform distribution, and excellent mechanical properties was prepared. This coating can be used to improve the hardness of the inner wall of slender tubes, which is of great value for future industrial applications such as nuclear fuel cladding.

[0052] Furthermore, in a method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube, different temperature conditions are set, and the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube is tested inside a slender tube based on these different temperature conditions to obtain the Si-C bonding amount of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube. Specifically, this includes:

[0053] Different temperature conditions were set, and a nanocrystalline silicon carbide coating was prepared on the inner surface of a slender tube with an inner diameter of 10 mm and a length of 500 mm using a TMS / Ar half-wave plate. The deposition of the nanocrystalline silicon carbide coating was tested under different temperature conditions.

[0054] The deposition of nanocrystalline silicon carbide coatings was detected and calculated using field emission scanning electron microscopy and atomic force microscopy at different temperatures, thereby obtaining the deposition rate of nanocrystalline silicon carbide coatings on the inner wall of small-diameter tubes.

[0055] The nanocrystalline silicon carbide coating on the inner wall of the small-diameter tube during the current deposition process was analyzed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy to obtain the Si-C bonding amount of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter tube.

[0056] It should be noted that the coating morphology was observed and its thickness was measured using a field emission scanning electron microscope (FE-SEM, model SU8010, Hitachi). The coating composition and chemical bond structure were analyzed using an X-ray photoelectron spectrometer (XPS, model ESCALAB 250XI) equipped with a monochromatic aluminum Kα ray source (wavelength hυ = 1,486.6 eV) combined with in-situ argon ion etching technology.

[0057] It should be noted that an amorphous silicon carbide coating was prepared on the inner surface of a slender tube with an inner diameter of 10 mm and a length of 500 mm using a TMS / Ar half-wave plate. The coating deposition was achieved within the slender tube at a temperature below 150℃. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) analysis showed that the silicon coating prepared at a deposition rate of approximately 48 nm / s exhibited high uniformity (root mean square roughness of approximately 0.5 nm), was defect-free, and had a uniform morphology. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) analysis revealed that the Si-C bonding amount significantly increased with increasing deposition rate Vs, while excess carbon or sp... 2 The size of the bonded cluster is transformed into sp 3 The pattern indicates that the final coating is mainly composed of Si-C bonds, which increases the coating's hardness, meaning the coating's hardness is closely related to the amount of Si-C bonding. Different Si-C bonding amounts are observed at different temperatures. This method can be used to obtain the Si-C bonding amount of the nanocrystalline silicon carbide coating on the inner wall of a small-diameter tube.

[0058] Furthermore, in a method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube, a knowledge graph is constructed, specifically including:

[0059] A knowledge graph was constructed, and the correlation between the deposition rate of nanocrystalline silicon carbide coating on the inner wall of a small-diameter tube and the Si-C bonding amount was established. The correlation was then used as the edge of an undirected isomorphic graph.

[0060] Temperature data, deposition rate, and Si-C bonding amount are used as graph nodes. The graph nodes are connected according to their relationships to construct an undirected heterogeneous graph. The undirected heterogeneous graph is then input into a knowledge graph for knowledge representation.

[0061] It should be noted that this method uses temperature data, deposition rate, and Si-C bonding amount as graph nodes, connects the graph nodes according to the correlation, constructs an undirected heterogeneous graph, and thus constructs a knowledge graph to predict the Si-C bonding amount.

[0062] Furthermore, in a method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube, a performance prediction model for the coating is constructed by combining a knowledge graph and the working parameter characteristics of the nanocrystalline silicon carbide coating during the preparation process. Specifically, this model includes:

[0063] Obtain the working temperature information of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary during the preparation process, and input the working temperature information of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary during the preparation process into the knowledge graph for analysis;

[0064] By analysis, the Si-C bonding amount of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary was obtained, the working parameter characteristics of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary during the preparation process were set, and the working parameter characteristics were used as model input to set performance evaluation index data.

[0065] The Si-C bonding amount was evaluated based on performance evaluation index data, the performance data of the nanocrystalline silicon carbide coating on the inner wall of small diameter tubes was obtained, and a performance prediction model of the nanocrystalline silicon carbide coating on the inner wall of small diameter tubes was constructed based on deep neural network.

[0066] The performance data of the nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube is used as the model output. The performance prediction model of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube is then learned according to the relationship between the model input and the model output.

[0067] It should be noted that the performance evaluation data can be Si-C bonding amount data. Since different Si-C bonding amounts can improve the mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of small-diameter thin tubes, the performance data of the nanocrystalline silicon carbide coating on the inner wall of small-diameter thin tubes mainly focuses on hardness characteristics. The initial hardness of 316L stainless steel pipe is 1.9 GPa. With increasing breakdown voltage, the hardness shows a significant increasing trend, reaching a peak of 40.4 GPa at 600V. The mechanical properties of the silicon carbide coating are mainly affected by its Si-C bonding amount. 3 The electronic configuration of carbon is affected, and this parameter can be controlled to some extent by deposition parameters such as the breakdown voltage (Ar / TMS) of the deposition plasma. Due to the synergistic effect of argon ion (Ar+) bombardment and hydrogen atom extraction, carbon atoms undergo a process from sp... 2 to sp 3 The structural transformation effectively improves the coating hardness, while excessive carbon or sp... 2 The size of the bonded cluster is transformed into sp 3 The shape indicates that the final coating is mainly composed of Si-C bonds. It is known that different operating parameters (operating voltage) during the preparation process result in different hardness characteristics for the nanocrystalline silicon carbide coating on the inner wall of small-diameter capillary tubes. This method can be used to construct a performance prediction model for the nanocrystalline silicon carbide coating on the inner wall of small-diameter capillary tubes, thereby predicting the performance of the coating.

[0068] Furthermore, in a method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary, the mechanical properties of the coating are predicted based on a performance prediction model, specifically including:

[0069] To obtain the working parameter characteristics of the nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary during the preparation process;

[0070] The working parameter characteristics of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube during the preparation process are input into the performance prediction model of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube for prediction.

[0071] The mechanical properties (hardness characteristics) of the nanocrystalline silicon carbide coating on the inner wall of the current small-diameter capillary tube are obtained through prediction.

[0072] Furthermore, in a method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary, the mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary are evaluated, specifically including:

[0073] Set a threshold for qualified mechanical performance characteristics, and determine whether the mechanical performance characteristics of the nanocrystalline silicon carbide coating on the inner wall of the current small-diameter capillary tube are greater than the threshold for qualified mechanical performance characteristics.

[0074] When the mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube are greater than the qualified mechanical properties threshold, a qualified evaluation result is generated.

[0075] When the mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube are not greater than the qualified mechanical properties threshold, an unqualified evaluation result is generated.

[0076] Furthermore, in a method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube, the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube are dynamically adjusted according to the evaluation results. Specifically, this includes:

[0077] When the evaluation result is unqualified, the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small diameter tube are re-initialized during the preparation process.

[0078] Based on the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube during the preparation process, it is estimated whether the evaluation result will continue to be unqualified. If so, the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube during the preparation process will be reset.

[0079] If the evaluation result is not unqualified, output the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small diameter tube during the preparation process, and control it according to the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small diameter tube during the preparation process.

[0080] It should be noted that by optimizing the voltage parameters using this method, nanoscale silicon carbide coatings with significantly increased thickness, uniform distribution, and excellent mechanical properties can be prepared, thereby improving the preparation quality of nanoscale silicon carbide coatings.

[0081] In addition, this method also includes:

[0082] A federated learning framework was constructed to obtain the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary during the preparation process and the preparation quality of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary during each operation.

[0083] The working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube during the preparation process and the preparation quality of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube are input into the federated learning framework for learning.

[0084] The contribution of each working parameter type during the preparation process of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary to the preparation quality of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary was calculated for each working cycle.

[0085] When the contribution feature is greater than the preset contribution feature threshold, the corresponding sub-model in the federated learning framework is updated according to the preparation quality of the nanocrystalline silicon carbide coating on the inner wall of the small diameter tube during the current working process.

[0086] The working parameters for the preparation of nanocrystalline silicon carbide coating on the inner wall of small-diameter tubes are provided according to the corresponding sub-model in the federated learning framework, and the preparation equipment is controlled according to the working parameters for the preparation of nanocrystalline silicon carbide coating on the inner wall of small-diameter tubes to provide high-quality nanocrystalline silicon carbide coating.

[0087] It should be noted that when the contribution feature is greater than the preset contribution feature threshold, the corresponding sub-model in the federated learning framework is updated according to the type of each working parameter in the preparation process of the nanocrystalline silicon carbide coating on the inner wall of the small diameter tube during the current working process, which affects the preparation quality of the nanocrystalline silicon carbide coating on the inner wall of the small diameter tube. This can further optimize the process parameters that affect the preparation process of the nanocrystalline silicon carbide coating and provide a high-quality nanocrystalline silicon carbide coating.

[0088] like Figure 2 As shown, the second aspect of the present invention provides a system for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube, including a memory and a processor. The memory includes a method program for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube. When the method program for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube is executed by the processor, the steps of any one of the methods for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube are implemented.

[0089] A third aspect of the present invention provides a computer-readable storage medium, including a method program for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube. When the method program for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube is executed by a processor, it implements the steps of any one of the methods for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube.

[0090] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are merely illustrative. For example, the division of units is only a logical functional division, and in actual implementation, there may be other division methods, such as: multiple units or components can be combined, or integrated into another system, or some features can be ignored or not executed. In addition, the coupling, direct coupling, or communication connection between the various components shown or discussed can be through some interfaces, and the indirect coupling or communication connection between devices or units can be electrical, mechanical, or other forms.

[0091] The units described above as separate components may or may not be physically separate. The components shown as units may or may not be physical units. They may be located in one place or distributed across multiple network units. Some or all of the units may be selected to achieve the purpose of this embodiment according to actual needs.

[0092] In addition, in the various embodiments of the present invention, each functional unit can be integrated into one processing unit, or each unit can be a separate unit, or two or more units can be integrated into one unit; the integrated unit can be implemented in hardware or in the form of hardware plus software functional units.

[0093] Those skilled in the art will understand that all or part of the steps of the above method embodiments can be implemented by hardware related to program instructions. The aforementioned program can be stored in a computer-readable storage medium. When the program is executed, it performs the steps of the above method embodiments. The aforementioned storage medium includes various media capable of storing program code, such as mobile storage devices, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0094] Alternatively, if the integrated units of this invention are implemented as software functional modules and sold or used as independent products, they can also be stored in a computer-readable storage medium. Based on this understanding, the technical solutions of the embodiments of this invention, or the parts that contribute to the prior art, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the methods of the various embodiments of this invention. The aforementioned storage medium includes various media capable of storing program code, such as mobile storage devices, ROM, RAM, magnetic disks, or optical disks.

[0095] The above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube, characterized in that, Includes the following steps: Different temperature conditions were set, and the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube was tested in the long and thin tube based on the different temperature conditions. The Si-C bonding amount of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube was obtained, and a knowledge graph was constructed. To obtain the working parameter characteristics of the nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary during the preparation process; A performance prediction model for the nanocrystalline silicon carbide coating on the inner wall of a small-diameter tube is constructed by combining the knowledge graph and the working parameter characteristics of the coating during the preparation process. The mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube are predicted based on the performance prediction model. The mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary were evaluated, and the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary were dynamically adjusted during the preparation process based on the evaluation results.

2. The method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube according to claim 1, characterized in that, Different temperature conditions were set, and the nanocrystalline silicon carbide coating on the inner wall of a small-diameter thin tube was tested inside the slender tube based on these different temperature conditions to obtain the Si-C bonding amount of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter thin tube. Specifically, this included: Different temperature conditions were set, and a nanocrystalline silicon carbide coating was prepared on the inner surface of a slender tube with an inner diameter of 10 mm and a length of 500 mm using a TMS / Ar half-wave plate. The deposition of the nanocrystalline silicon carbide coating was tested under different temperature conditions. At different temperatures, the deposition of the nanocrystalline silicon carbide coating was detected and calculated using field emission scanning electron microscopy and atomic force microscopy to obtain the deposition rate of the nanocrystalline silicon carbide coating on the inner wall of a small-diameter tube. The nanocrystalline silicon carbide coating on the inner wall of the small-diameter tube during the current deposition process was analyzed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy to obtain the Si-C bonding amount of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter tube.

3. The method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube according to claim 1, characterized in that, Building a knowledge graph specifically includes: A knowledge graph is constructed, and the correlation between the deposition rate of nanocrystalline silicon carbide coating on the inner wall of a small-diameter tube and the Si-C bonding amount is established. The correlation is then used as the edge of an undirected isomorphic graph. Temperature data, deposition rate, and Si-C bonding amount are used as graph nodes. The graph nodes are connected according to the aforementioned relationships to construct an undirected heterogeneous graph. The undirected heterogeneous graph is then input into the knowledge graph for knowledge representation.

4. The method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube according to claim 1, characterized in that, Based on the aforementioned knowledge graph and the working parameter characteristics of the nanocrystalline silicon carbide coating on the inner wall of small-diameter capillary tubes during the preparation process, a performance prediction model for the nanocrystalline silicon carbide coating on the inner wall of small-diameter capillary tubes is constructed, specifically including: The working temperature information of the nanocrystalline silicon carbide coating on the inner wall of the current small-diameter capillary during the preparation process is obtained, and the working temperature information of the nanocrystalline silicon carbide coating on the inner wall of the current small-diameter capillary during the preparation process is input into the knowledge graph for analysis; By analysis, the Si-C bonding amount of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary is obtained, the working parameter characteristics of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary during the preparation process are set, and the working parameter characteristics are used as model input to set performance evaluation index data. The Si-C bonding amount is evaluated based on the performance evaluation index data to obtain the performance data of the nanocrystalline silicon carbide coating on the inner wall of the small diameter tube, and a performance prediction model of the nanocrystalline silicon carbide coating on the inner wall of the small diameter tube is constructed based on a deep neural network. The performance data of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter tube is used as the model output, and the performance prediction model of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter tube is learned according to the relationship between the model input and the model output.

5. The method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube according to claim 1, characterized in that, Based on the performance prediction model of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube, the mechanical properties of the current nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube are predicted, specifically including: To obtain the working parameter characteristics of the nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary during the preparation process; The working parameter characteristics of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube during the preparation process are input into the performance prediction model of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube for prediction. The mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube are obtained through prediction.

6. The method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube according to claim 1, characterized in that, The mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of the current small-diameter capillary tube are evaluated, specifically including: Set a qualified mechanical performance characteristic threshold, and determine whether the mechanical performance characteristics of the nanocrystalline silicon carbide coating on the inner wall of the current small-diameter capillary tube are greater than the qualified mechanical performance characteristic threshold. When the mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of the current small-diameter capillary tube are greater than the qualified mechanical properties threshold, a qualified evaluation result is generated. When the mechanical properties of the nanocrystalline silicon carbide coating on the inner wall of the current small-diameter tube are not greater than the qualified mechanical properties threshold, an unqualified evaluation result is generated.

7. The method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube according to claim 1, characterized in that, Based on the evaluation results, the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary were dynamically adjusted during the preparation process, specifically including: When the evaluation result is unqualified, the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small diameter tube are re-initialized during the preparation process. Based on the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube during the preparation process, it is estimated whether the evaluation result will continue to be unqualified. If so, the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small-diameter capillary tube during the preparation process will be reset. If the evaluation result is not unqualified, output the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small diameter tube during the preparation process, and control it according to the working parameters of the nanocrystalline silicon carbide coating on the inner wall of the small diameter tube during the preparation process.

8. A system for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube, characterized in that, The device includes a memory and a processor. The memory includes a method program for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube. When the processor executes the method program for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube, it implements the steps of the method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube as described in any one of claims 1-7.

9. A computer-readable storage medium, characterized in that, The method includes a procedure for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube. When the procedure is executed by a processor, it implements the steps of the method for preparing a nanocrystalline silicon carbide coating on the inner wall of a small-diameter capillary tube as described in any one of claims 1-7.

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