Efficient wafer uniform corrosion device

Abstract

The invention relates to the technical field of wafer manufacturing, in particular to an efficient wafer uniform corrosion device. The wafer corrosion device comprises a wafer corrosion cylinder, the outer wall of the wafer corrosion cylinder is fixedly connected with four storage cavities, the four storage cavities are connected in a penetrating mode, and four lifting grooves are distributed in the inner wall of the wafer corrosion cylinder in a circumferential array mode. A'clamping-positioning-spraying 'three-in-one dynamic adaptation mechanism is formed between the limiting mechanism and the regulation and control mechanism, when wafers with different diameters are placed into the lower clamping plate, an operator adjusts the position of the upper clamping plate to realize edge coating, the displacement of the sliding block synchronously pushes the supporting rod to move, and the clamping, positioning and spraying of the wafers are realized. The top of the lifting rod always abuts against the bottom face of the upper clamping plate, the mechanical supporting effect is achieved, clamping unbalance caused by jetting counter force or gravity is prevented, and then the clamping block and the clamping groove between the lifting rod are connected in a stacked mode and form a double-linkage mechanism of layered lifting and overall fixing with the hydraulic lifting assembly.

Description

Technical Field

[0001] This invention relates to the field of wafer manufacturing technology, and more specifically, to a high-efficiency wafer uniform etching apparatus. Background Technology

[0002] High-efficiency wafer uniform etching equipment is a specialized automated device used in semiconductor manufacturing, microelectronics processing, and optical component fabrication. It achieves highly efficient material removal and ultra-high uniformity etching of wafer surfaces (such as silicon wafers, sapphire substrates, and compound semiconductor wafers) by precisely controlling the etching environment and process parameters. Its core objective is to minimize etching thickness variations in different areas of the wafer (such as the center and edges, and local micro-regions) while ensuring the etching rate meets mass production or R&D requirements. This provides a high-flatness, high-consistency wafer surface foundation for subsequent photolithography, thin film deposition, and device packaging processes.

[0003] In the semiconductor material processing, surface etching of wafers is a key process, mainly used to remove the cutting damage layer, improve surface flatness, and control the edge morphology of wafers. Traditional etching methods require frequent replacement or adjustment of conventional fixtures when processing wafers of different diameters, resulting in low process efficiency. Furthermore, mechanical contact clamping can easily cause defects such as scratches and particulate contamination on the wafer surface or edges, which seriously affects product yield. In addition, the etching solution is prone to concentration gradients and flow dead zones during the reaction process, resulting in inconsistent etching rates on the wafer surface, especially in the edge areas, making it difficult to achieve high-precision and high-consistency etching effects. In view of this, we propose an efficient wafer uniform etching device. Summary of the Invention

[0004] The purpose of this invention is to provide a high-efficiency wafer uniform etching device to solve the problems mentioned in the background art, such as low efficiency due to frequent fixture replacement, easy scratches and contamination of wafers caused by mechanical clamping, and inconsistent edge and surface etching due to uneven flow of etching solution.

[0005] To achieve the above objectives, the present invention provides a high-efficiency uniform wafer etching device, including a wafer etching cylinder. The outer wall of the wafer etching cylinder is fixedly connected to four storage cavities, and the four storage cavities are interconnected. The inner wall of the wafer etching cylinder has four lifting grooves arranged in a circumferential array. The wafer etching cylinder is slidably connected to multiple sets of limiting mechanisms through the four lifting grooves. While stabilizing the edge of the wafer, the multiple sets of limiting mechanisms also perform directional fluid flushing on the edge area, causing the wafer to rotate controllably in the etchant environment. The multiple sets of limiting mechanisms are equipped with several control mechanisms to adapt to the clamping and positioning of wafers of different diameters. By controlling the spatial displacement of the control mechanisms and the directional spraying of corrosive liquid, the position control and edge processing of wafers of different specifications can be achieved. A stirring element is provided at the bottom of the wafer etching cylinder to continuously stir the etching liquid. The fluid disturbance generated by the stirring element and the directional etching liquid flow ejected by the limiting mechanism work together to force the wafer to rotate.

[0006] As a further improvement to this technical solution, the limiting mechanism includes a lifting rod that is slidably connected to four lifting slots. An upper clamping plate and a lower clamping plate are symmetrically distributed on the lifting rod. A rubber gear is fixedly connected to one end of the upper clamping plate, and the rubber gear is meshed with the lifting rod. One end of the lower clamping plate is fixedly connected to the lifting rod. A rubber support piece is fixedly connected to the opposite end of the upper and lower clamping plates. An annular connecting frame for connecting the lifting rods is fixedly connected to the lifting rod.

[0007] As a further improvement to this technical solution, the other ends of the upper clamping plate and the lower clamping plate are connected to a first nozzle, and the first nozzle is mounted obliquely on the upper clamping plate and the lower clamping plate to drive the wafer to rotate while spraying the corrosive liquid. The lower clamping plate and the upper clamping plate are provided with channels for the flow of corrosive liquid, and the channels are connected to the first nozzle.

[0008] As a further improvement to this technical solution, a three-way pipe is fixedly connected inside the lifting rod, and a first corrugated pipe is connected through the upper part of the three-way pipe. The input end of the channel on the upper clamping plate is connected through the output end of the first corrugated pipe, and the channel on the lower clamping plate is connected through the lower output port of the three-way pipe.

[0009] As a further improvement to this technical solution, an annular circulation pipe is connected through the middle region of the three-way pipe to connect multiple limiting mechanisms. The input end of the bottom of the three-way pipe is connected to the liquid pump, and the input end of the liquid pump is connected through the storage cavity.

[0010] As a further improvement to this technical solution, the control mechanism includes a limiting channel fixedly connected to the lower clamping plate. The top of the limiting channel has a straight groove, and the inner bottom wall has an arc-shaped groove.

[0011] As a further improvement to this technical solution, the limiting channel is internally slidably connected with a sliding block adapted to the straight groove. The bottom of the sliding block is fixedly connected with a damping rod, and the sliding block is elastically connected to an arc-shaped compression block through the damping rod. The arc-shaped compression block is adapted to the arc-shaped groove.

[0012] As a further improvement to this technical solution, a support rod is fixedly connected to the top of the sliding block, the top of the support rod slides in contact with the bottom surface of the upper clamping plate, a second corrugated pipe is connected through one side of the support rod, and the input end of the second corrugated pipe is connected through the tee pipe, and a second nozzle is connected through the other side of the support rod.

[0013] As a further improvement to this technical solution, the top of the lifting rod located at the top of the wafer etching cylinder is fixedly connected to a connecting rod, and the bottom is fixedly connected to a locking block. The top of the wafer etching cylinder is locked with a sealing cover, and the top of the sealing cover is connected to an input pipe. The connecting rod passes through the wafer etching cylinder and is inserted with an insert rod. A slot is fixedly connected to the top of the lifting rod located at the bottom of the inside of the wafer etching cylinder; The top of the lifting rod located in the middle of the wafer etching cylinder is fixedly connected to a slot, and the bottom is a locking block.

[0014] As a further improvement to this technical solution, the lifting assembly includes a hydraulic rod fixedly connected to the top of the sealing cover, a connecting plate fixedly connected to the bottom of the hydraulic rod, and one side of the connecting plate fixedly connected to the outer wall of the wafer etching cylinder. An output pipe is connected through the bottom of the wafer etching cylinder, and an inlet pipe is connected through the storage cavity. The stirring component includes a drive motor fixedly connected to the bottom surface of the wafer etching cylinder. The output end of the drive motor is splinedly connected to a stirring rod, and one end of the stirring rod passes through the wafer etching cylinder and is fixedly connected to a turbine fan.

[0015] Compared with the prior art, the technical advantages of the present invention are: First, the limiting mechanism and the control mechanism form a dynamic adaptation mechanism of "clamping-positioning-spraying" in three parts. When wafers of different diameters are placed into the lower clamping plate, the operator adjusts the position of the upper clamping plate to achieve edge coverage. The displacement of the sliding block pushes the support rod to move synchronously, so that its top always abuts against the bottom surface of the upper clamping plate, which plays a mechanical support role and prevents clamping imbalance caused by spray reaction force or gravity. At the same time, the damping rod connected to the bottom of the sliding block drives the arc-shaped compression block to elastically compress and lock its position in the arc-shaped groove, forming an adjustable radial limiting node. This ensures that the clamping force is adaptively adjusted according to the wafer size while maintaining structural stability. More importantly, the second nozzle on the side wall of the support rod moves synchronously, so that its spray direction is always accurately aligned with the outermost edge area of ​​the current wafer, which is the edge zone most prone to unevenness in the etching process. Thus, the clamping action itself triggers the automatic calibration of the nozzle's spatial coordinates.

[0016] Secondly, the stacked connection of the locking blocks and slots between the lifting rods forms a dual linkage mechanism of hierarchical lifting and overall fixation with the hydraulic lifting components. The top lifting rod is locked to the top of the cylinder through connecting rods and insert rods, while the middle and bottom lifting rods are connected in a step-by-step stacked manner through the locking block-slot structure. When the hydraulic rod drives the sealing cover to descend, its connecting plate pulls the entire series structure down synchronously, allowing each layer's limiting mechanism to accurately enter the predetermined working height. Conversely, the upward process achieves overall lifting, facilitating the removal of wafers layer by layer. The key to this structure is that the insert rod not only fixes the top position but also rigidly transmits the constraint force to each level of the lifting rod below, ensuring that the multi-layer structure does not experience relative misalignment or loosening under the disturbance of the etching liquid. At the same time, since each set of limiting mechanisms can independently adjust the clamping parameters (such as clamping radius and nozzle angle), this stacking mode supports processing wafer combinations of different sizes and thicknesses within the same etching cycle, greatly improving the process flexibility of the equipment.

[0017] Finally, the macroscopic flow field generated by the stirring component and the local tangential jet sprayed by the limiting mechanism form a "main drive - auxiliary push" type of rotational power synergy. When the turbine fan rotates at the bottom, it generates a spiral fluid disturbance from bottom to top, which breaks the static stratification of the corrosive liquid, promotes uniform mixing of components and eliminates bubble retention. Meanwhile, four circumferentially distributed first nozzles continuously spray at an angle, applying tangential reaction force to the edge of the wafer and forming an initial rotational torque. After the two effects are superimposed, the rotational driving force on the wafer no longer depends on a single source: the turbofan flow field provides background thrust, suppressing swaying caused by uneven local spraying; while the nozzle jet provides concentrated torque, ensuring rapid start-up and controllable speed. Especially when multiple wafers are processed simultaneously, each wafer layer can be affected by the upward circulation from the lower turbofan, while each receives directional scouring from its own dedicated nozzle, thereby achieving synchronous and stable rotation of all wafers and avoiding the weak response problem of the top layer caused by traditional single-point drive.

[0018] In addition to the objectives, features, and advantages described above, the present invention has other objectives, features, and advantages. The invention will now be described in further detail with reference to the figures. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the overall structure assembly of the present invention; Figure 2 This is a schematic diagram showing the cooperation relationship between the limiting mechanism and the control mechanism of the present invention; Figure 3 For the present invention Figure 2 Schematic diagram at point A in the middle; Figure 4 For the present invention Figure 2 Schematic diagram at point B in the middle; Figure 5This is a diagram illustrating the rotation of the wafer in this invention. Figure 6 This is a schematic diagram of the clamping mechanism of the present invention; Figure 7 This is a schematic cross-sectional view of the entire invention; Figure 8 This is a cross-sectional schematic diagram of the limiting mechanism and the control mechanism of the present invention; Figure 9 For the present invention Figure 8 Diagram at point C; Figure 10 This is a demonstration diagram of multiple chip clamping devices according to the present invention; Figure 11 This is a cross-sectional view of the overall assembly of the present invention.

[0020] The meanings of the labels in the diagram are as follows: 100. Wafer etching cylinder; 101. Storage cavity; 200. Limiting mechanism; 201. Lifting rod; 2011. Locking block; 2012. Locking slot; 202. Upper clamping plate; 203. Lower clamping plate; 204. First nozzle; 205. T-joint pipe; 206. First corrugated pipe; 207. Rubber support plate; 208. Annular circulation pipe; 300. Control mechanism; 301. Limiting channel; 302. Sliding block; 303. Arc-shaped compression block; 304. Support rod; 305. Second bellows; 306. Second nozzle; 400. Lifting assembly; 500. Mixing components. Detailed Implementation

[0021] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] The present invention provides the following preferred embodiments: Please see Figure 1 - Figure 11 As shown, this embodiment provides a high-efficiency uniform wafer etching device, including a wafer etching cylinder 100. Four storage cavities 101 are fixedly connected to the outer wall of the wafer etching cylinder 100, and the four storage cavities 101 are interconnected. Four lifting grooves are distributed in a circumferential array on the inner wall of the wafer etching cylinder 100. Multiple sets of limiting mechanisms 200 are slidably connected to the wafer etching cylinder 100 through the four lifting grooves. While stabilizing the edge of the wafer, the multiple sets of limiting mechanisms 200 also perform directional fluid flushing on the edge area, causing the wafer to rotate controllably in the etchant environment. The multiple limiting mechanisms 200 are equipped with several control mechanisms 300 to adapt to the clamping and positioning of wafers of different diameters. Through the spatial displacement and directional spraying of etchant liquid by the control mechanism 300, the position control and edge processing of wafers of different specifications can be achieved. A stirring element 500 is provided at the bottom of the wafer etching cylinder 100 to continuously stir the etching liquid. The fluid disturbance generated by the stirring element 500 and the directional etching liquid flow ejected by the limiting mechanism 200 work together to force the wafer to rotate.

[0023] Therefore, based on the above features, the improvements of the present invention will be described in detail: Considering that traditional wafer etching methods mostly employ static immersion or mechanical clamping and rotation etching, the wafer is usually fixed in a fixture and immersed in the etching solution for chemical etching. However, this mechanical clamping method is prone to creating physical contact marks on the wafer edge or surface, which may not only cause microcracks or scratches, but also cause cross-contamination due to residual particles, affecting the quality of subsequent processes. At the same time, the uneven flow of the etching solution in traditional methods can easily form bubbles or concentration gradients on the wafer surface, resulting in uneven etching. In particular, the etching rate often deviates from the center area in the edge area, making it difficult to achieve a highly consistent etching effect. Therefore, when performing the etching process on the wafer, the limiting mechanism 200 and the control mechanism 300 work together to accurately position and stably clamp wafers of different specifications inside the wafer etching cylinder 100. Then, with the fluid disturbance effect generated by the stirring element 500, combined with the directional spraying of the etching liquid by the limiting mechanism 200, the wafer rotates continuously. During this process, the etching medium inside the wafer etching cylinder 100 and the etching liquid sprayed by the limiting and control mechanisms 300 work together to achieve uniform etching of the wafer surface and edges. The etching liquid sprayed by the limiting mechanism 200 and the control mechanism 300 not only specifically etches the edge areas of the wafer during rotation but also has a non-contact limiting function. Through hydraulic constraint, it adapts to the positioning requirements of wafers of different specifications. This limiting mechanism avoids direct physical contact with the wafer, thereby effectively preventing wafer surface wear and contamination, achieving the following effects: Firstly, through the coordinated operation of the limiting mechanism 200 and the control mechanism 300, adaptive and precise positioning and stable clamping of wafers of different specifications can be achieved. This eliminates the need to change fixtures, meeting the process requirements of wafers of various sizes and significantly improving the equipment's versatility and production flexibility. Furthermore, multiple limiting mechanisms 200 and multiple control mechanisms 300 can operate independently and cooperate with each other to limit and fix wafers at different layers or positions. This allows for different wafer specifications loaded on each layer within the same etching system, enabling parallel processing of multiple batches and specifications of wafers. This not only greatly improves the equipment's compatibility with diverse wafer sizes and supports the simultaneous processing of mixed-specification wafers, reducing downtime caused by model changes and improving production efficiency, but also enhances the system's flexibility and intelligence through independent control of each mechanism. This makes it suitable for small-batch, multi-variety semiconductor manufacturing scenarios, reducing production costs and improving process adaptability and production line efficiency. Secondly, while spraying the etchant, the limiting mechanism 200 and the control mechanism 300 use hydraulic force to implement non-contact constraint on the wafer, avoiding surface wear and particle contamination caused by traditional mechanical clamping, effectively protecting the wafer's integrity and cleanliness. Under the combined action of the directional impact of the etchant flow and the fluid disturbance generated by the stirring component 500, the wafer rotates continuously and stably, so that the etchant medium acts evenly on all areas of the wafer, especially enhancing the etching consistency of the edge areas. Thirdly, the etching solution is directionally sprayed out by the limiting mechanism 200 and the regulating mechanism 300. Combined with the overall flow field regulation inside the etching cylinder, a multi-dimensional etching environment is formed, which not only improves the mass transfer efficiency, but also reduces the phenomenon of bubble adhesion and local concentration unevenness. This achieves uniform and controllable etching of the wafer surface and edges. The overall process improves the etching quality and extends the wafer lifespan, making it suitable for semiconductor processing scenarios with high precision and high cleanliness requirements.

[0024] Based on the above, the specific structure will be disclosed in detail: To achieve wafer positioning and edge etching, the positioning mechanism 200 is disclosed in detail, specifically as follows: Figure 2 - Figure 6As shown, the limiting mechanism 200 includes a lifting rod 201 slidably connected to four lifting slots. An upper clamping plate 202 and a lower clamping plate 203 are symmetrically distributed on the lifting rod 201. A rubber gear is fixedly connected to one end of the upper clamping plate 202, and the rubber gear meshes with the lifting rod 201. One end of the lower clamping plate 203 is fixedly connected to the lifting rod 201. A rubber support plate 207 is fixedly connected to the opposite end of the upper clamping plate 202 and the lower clamping plate 203. An annular connecting frame for connecting the lifting rods 201 is fixedly connected to the lifting rod 201. (Wherein: the rubber support plate 207 and the rubber gear are all made of perfluoroether rubber, and the arc-shaped compression block 303 is polytetrafluoroethylene (PTFE) or carbon fiber reinforced PTFE.)

[0025] Therefore, by rotating the upper clamping plate 202 to adjust its position, the upper and lower clamping rubber support plates 207 form an enclosure from the upper and lower surfaces of the wafer. By utilizing the flexible properties of the rubber material to tightly adhere to the edge of the wafer, it not only avoids the scratch damage to the wafer surface caused by rigid contact, but also offsets the displacement force generated by the fluid impact during the corrosion process through the clamping force, ensuring that the wafer maintains a stable posture in the corrosive environment.

[0026] Specifically, to achieve the rotation of the wafer during the ejection of the etchant liquid, as follows: Figure 5 As shown, the other ends of the upper clamping plate 202 and the lower clamping plate 203 are both connected to a first nozzle 204, and the first nozzle 204 is obliquely mounted on the upper clamping plate 202 and the lower clamping plate 203 to drive the wafer to rotate while spraying the corrosive liquid. The lower clamping plate 203 and the upper clamping plate 202 are both provided with channels for the flow of corrosive liquid, and the channels are connected to the first nozzle 204. The lifting rod 201 is fixedly connected to a three-way pipe 205. The upper part of the three-way pipe 205 is connected to a first corrugated pipe 206. The input end of the channel on the upper clamping plate 202 is connected to the output end of the first corrugated pipe 206, and the channel on the lower clamping plate 203 is connected to the lower output port of the three-way pipe 205. Therefore, the etchant in the storage chamber 101 is pumped through the three-way pipe 205 and the first bellows 206 to the channel, and finally sprayed out through the obliquely assembled nozzle. The obliquely set first nozzle 204 makes the spray direction of the etchant form an angle with the tangential direction of the wafer. The reaction force generated during spraying forms a torque on the wafer, forcing the wafer to rotate in the clamped state. The nozzles of the multiple limiting mechanisms 200 are distributed along the circumference, and the spray force forms a synergistic torque to ensure the stable rotation of the wafer and avoid shaking caused by uneven local force.

[0027] More specifically, to ensure that corrosive liquid can be circulated inside each set of 200 limiting mechanisms, specifically as follows: Figure 6As shown, a ring-shaped circulation pipe 208 is connected through the upper middle region of the three-way pipe 205 to connect multiple limiting mechanisms 200. The input end of the bottom of the three-way pipe 205 is connected to the liquid pump, and the input end of the liquid pump is connected through the storage cavity 101. Therefore, by connecting the three-way pipes 205 of multiple limiting mechanisms 200 through the annular circulation pipe 208, the etching solution is distributed to each nozzle through the same pipeline system, ensuring that the pressure and flow rate of each spray point are consistent. This design avoids the local corrosion rate difference caused by the flow rate difference of a single nozzle. At the same time, in conjunction with the rotation of the wafer, the contact time between each area of ​​the wafer surface and the etching solution is uniform, improving the consistency of the etching process.

[0028] Furthermore, to achieve the fixation of wafers of different diameters, the detailed control mechanism 300 is disclosed, specifically as follows: Figure 7 - Figure 9 As shown, the control mechanism 300 includes a limiting channel 301 fixedly connected to the lower clamping plate 203. The top of the limiting channel 301 is provided with a straight groove, and the inner bottom wall is provided with an arc-shaped groove. The inside of the limiting channel 301 is slidably connected to a sliding block 302 that is adapted to the straight groove. The bottom of the sliding block 302 is fixedly connected to a damping rod, and the sliding block 302 is elastically connected to an arc-shaped compression block 303 through the damping rod. The arc-shaped compression block 303 is adapted to the arc-shaped groove. Therefore, the sliding block 302 in the limiting channel 301 can slide along the straight groove. By adjusting its position, it can adapt to wafers of different diameters. The damping rod at the bottom of the sliding block 302 is connected to the arc-shaped compression block 303. The arc-shaped compression block 303 cooperates with the arc-shaped groove on the bottom wall of the limiting channel 301. The elastic force of the damping rod makes the arc-shaped compression block 303 fit into different positions in the arc-shaped groove, forming an adjustable positioning node. This can fix the position of the sliding block 302 and allow for moderate buffering when subjected to force, avoiding rigid adjustment from causing squeezing damage to the wafer.

[0029] It is worth mentioning that to achieve seamless edge processing of the chip, specifically as follows: Figure 8 and Figure 9As shown, the support rod 304 moves synchronously with the sliding block 302, and its top is in sliding contact with the bottom surface of the upper clamping plate 202. It always maintains support when the upper clamping plate 202 adjusts its angle, preventing the upper clamping plate 202 from tilting excessively due to its own weight or jetting force, and ensuring that the clamping force of the upper and lower clamping plates 203 on the wafer is balanced and stable. The top of the sliding block 302 is fixedly connected to the support rod 304, and the top of the support rod 304 is in sliding contact with the bottom surface of the upper clamping plate 202. A second corrugated pipe 305 is connected through one side of the support rod 304, and the input end of the second corrugated pipe 305 is connected through the three-way pipe 205. A second nozzle 306 is connected through the other side of the support rod 304. (Wherein: the first corrugated pipe 206 and the second corrugated pipe 305 are made of polytetrafluoroethylene (PTFE) as the inner lining body, combined with fluororubber (FKM / FFKM) elastic layer, and can be fitted with a composite corrugated hose with stainless steel spiral armor according to the mechanical environment).

[0030] Therefore, the support rod 304 is connected to the three-way pipe 205 through the second bellows 305. The etching liquid enters the internal channel of the support rod 304 through the three-way pipe 205 and the bellows, and is finally sprayed out by the second nozzle 306. Since the position of the sliding block 302 can be adjusted according to the wafer diameter, the second nozzle 306 can always be aligned with the area to be etched on the edge of the wafer, forming a multi-angle spray coverage with the first nozzle 204 to ensure that there are no dead corners in the edge treatment. The flexibility of the bellows ensures the continuity of the etching liquid delivery during the adjustment of the sliding block 302. It does not restrict the displacement adjustment of the mechanical structure, and can maintain a stable fluid pressure, making the spray intensity uniform and controllable, and improving the accuracy of edge etching.

[0031] However, to achieve simultaneous etching of multiple wafers, specifically... Figure 10 As shown, the top of the lifting rod 201 located at the top of the wafer etching cylinder 100 is fixedly connected to a connecting rod, and the bottom is fixedly connected to a locking block 2011. The top of the wafer etching cylinder 100 is locked with a sealing cover, and the top of the sealing cover is connected to an input pipe. The connecting rod passes through the wafer etching cylinder 100 and is inserted into a plug rod. A slot 2012 is fixedly connected to the top of the lifting rod 201 located at the bottom of the wafer etching cylinder 100; The top of the lifting rod 201 located in the middle of the wafer etching cylinder 100 is fixedly connected to the slot 2012, and the bottom is the block 2011.

[0032] The lifting assembly 400 includes a hydraulic rod fixedly connected to the top of the sealing cover. A connecting plate is fixedly connected to the bottom of the hydraulic rod, and one side of the connecting plate is fixedly connected to the outer wall of the wafer etching cylinder 100. An output pipe is connected through the bottom of the wafer etching cylinder 100, and an inlet pipe is connected through the storage cavity 101. The input pipe and the inlet pipe are used to replenish the etching solution and add reagents, respectively, and the output pipe is used to discharge waste liquid, forming independent fluid inlet and outlet channels, which facilitates the replacement and circulation management of the etching solution.

[0033] Therefore, on the one hand, the lifting rods 201 at different positions can be detachably combined through the matching structure of the locking block 2011 and the locking slot 2012: the locking block 2011 at the bottom of the top lifting rod 201 can be engaged with the locking slot 2012 at the top of the middle lifting rod 201, and the locking block 2011 at the bottom of the middle lifting rod 201 can also cooperate with the locking slot 2012 at the top of the bottom lifting rod 201 to form a multi-level support structure. This design allows the number of lifting rods 201 to be flexibly increased or decreased according to the wafer size, and the height of the overall clamping mechanism can be adjusted to adapt to the processing requirements of different thicknesses. The insertion and cooperation of the connecting rod and the insert rod further fixes the relative position of the top lifting rod 201 and the wafer etching cylinder 100, ensuring the stability of the combined structure in the etching operation. On the other hand, the hydraulic rod drives the sealing cover to lift and lower. When it lowers, the sealing cover engages with the top of the wafer etching cylinder 100 to form a sealed space, preventing the etching liquid from splashing and leaking during stirring and spraying, while also preventing external contaminants from entering and affecting the etching effect. When it rises, it provides operating space for wafer loading and unloading and equipment maintenance. Combined with the automated control of the hydraulic drive, it improves the ease of operation of the equipment.

[0034] Next, to achieve simultaneous rotational etching of multiple wafers, specifically as follows: Figure 11 As shown, the stirring component 500 includes a drive motor fixedly connected to the bottom surface of the wafer etching cylinder 100. The output end of the drive motor is splinedly connected to a stirring rod, and one end of the stirring rod passes through the wafer etching cylinder 100 and is fixedly connected to a turbine fan. Therefore, on the one hand, the drive motor drives the stirring rod to rotate through the spline connection, so that the turbine fan at the end rotates synchronously. When the turbine fan rotates, it generates shear force and thrust on the corrosion liquid, forming a fluid movement that spreads from the center to the surroundings, breaking the static stratification state of the corrosion liquid. This disturbance promotes the rapid mixing of various components in the corrosion liquid (such as etchant and additives), avoiding uneven corrosion rate caused by local concentration differences, and at the same time accelerating the diffusion of corrosion products to prevent them from adhering to the wafer surface and affecting subsequent reactions. On the other hand, the circulation generated by the turbofan and the directional jet flow of the first nozzle 204 in the limiting mechanism 200 form a composite flow field: the oblique jet of the nozzle provides the initial rotational torque for the wafer, while the overall circulation driven by the turbofan strengthens this rotational tendency, so that the wafer maintains a stable and uniform rotational state under the synergistic effect of the two fluid forces. Compared with a single power source, this synergistic design can reduce the swaying of the wafer during rotation, ensure that the contact time and intensity between each area of ​​its surface and the etchant are consistent, and improve the corrosion uniformity.

[0035] The working steps of this invention are as follows: Before wafer etching begins, the sealing cover of the wafer etching cylinder 100 is first opened. The position of each layer of lifting rods 201 is controlled by the lifting assembly 400, and the limiting mechanism 200 is adjusted to be vertically distributed outside the cylinder to accommodate the loading requirements of different numbers or spacings of wafers. The wafers to be etched are placed sequentially on the lower clamping plates 203 of each layer of limiting mechanism 200. The edges of the wafers are flexibly supported by rubber support sheets 207 to avoid damage from hard contact. Subsequently, according to the wafer diameter, the sliding block 302 in the adjusting mechanism 300 slides along the straight groove of the limiting channel 301, driving the support rod 304 to move. At the same time, the damping rod pushes the arc-shaped compression block 303 to elastically compress within the arc groove, thereby adjusting the distance between the wafer and the second nozzle 306. After clamping is completed, the sealing cover is closed, and the position of each layer of lifting rod 201 is controlled by the lifting assembly 400, and the limiting mechanism 200 is adjusted to be vertically distributed in the cylinder. Etching solution is injected into the four interconnected storage cavities 101 through the inlet tube. The pump is started to draw the etching solution from the storage cavities 101 to the three-way pipes 205 of each limiting mechanism 200. The etching solution is split at the three-way pipes 205. One path is transported through the first corrugated pipe 206 to the internal channel of the upper clamping plate 202 and then sprayed out by the first nozzle 204 installed at an angle. The other path goes directly into the channel of the lower clamping plate 203 and is also sprayed out by the first nozzle 204 on it. At the same time, part of the etching solution is distributed through the annular circulation pipe 208 to the second corrugated pipe 305 of the control mechanism 300 and is directionally sprayed by the second nozzle 306 on the side wall of the support rod 304. These obliquely sprayed etching solutions form a tangential scouring force on the edge of the wafer, generating a driving force to push the wafer to rotate without directly contacting the wafer. After the drive motor at the bottom of the wafer etching cylinder 100 is started, it drives the stirring rod to rotate. The turbine at the end of the rod creates a bottom-up fluid disturbance in the cylinder, which enhances the overall fluidity of the etching solution and prevents precipitation and bubble accumulation. The flow field generated by stirring works in synergy with the directional liquid flow sprayed by the limiting mechanism 200 to further enhance the mass transfer process around the wafer and promote the continuous and stable rotation of the wafer. In this dynamic etching environment, the etching solution acts uniformly on the wafer surface and edge areas to achieve comprehensive and consistent chemical etching.

[0036] After the etching process is completed, the liquid pump and drive motor are turned off, and the liquid supply and stirring are stopped. Waste liquid is discharged through the output pipe at the bottom of the wafer etching cylinder 100. Subsequently, the hydraulic rod drives the connecting plate to rise and fall. Through the coordinated action of the insertion rod, the clamping block 2011, and the clamping slot 2012, each lifting rod 201 is lifted as a whole or layer by layer, facilitating the removal of the processed wafers layer by layer. The entire process achieves non-clamp loading of wafers of various specifications, non-contact limit drive, dynamic uniform etching, and efficient liquid drainage and cleaning, demonstrating good process adaptability and automated operation capabilities.

[0037] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely preferred examples and are not intended to limit the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A high-efficiency wafer uniform etching apparatus, comprising a wafer etching cylinder (100), characterized in that; The outer wall of the wafer etching cylinder (100) is fixedly connected to four storage cavities (101), and the four storage cavities (101) are connected in a through manner. The inner wall of the wafer etching cylinder (100) is arranged in a circumferential array with four lifting grooves. The wafer etching cylinder (100) is slidably connected to multiple sets of limiting mechanisms (200) through the four lifting grooves. While stabilizing the edge of the wafer, the multiple sets of limiting mechanisms (200) also perform directional fluid flushing on the edge area, causing the wafer to rotate controllably in the corrosive liquid environment; The multiple sets of limiting mechanisms (200) are equipped with several control mechanisms (300) to adapt to the clamping and positioning of wafers of different diameters. Through the spatial displacement and directional spraying of corrosive liquid by the control mechanism (300), the position control and edge processing of wafers of different specifications can be realized. A stirring element (500) is provided at the bottom of the wafer etching cylinder (100) to continuously stir the etching liquid. The fluid disturbance generated by the stirring element (500) and the directional etching liquid flow ejected by the limiting mechanism (200) work together to force the wafer to rotate.

2. The high-efficiency wafer uniform etching apparatus according to claim 1, characterized in that: The limiting mechanism (200) includes a lifting rod (201) slidably connected to four lifting slots. An upper clamping plate (202) and a lower clamping plate (203) are symmetrically distributed on the lifting rod (201). A rubber gear is fixedly connected to one end of the upper clamping plate (202), and the rubber gear meshes with the lifting rod (201). One end of the lower clamping plate (203) is fixedly connected to the lifting rod (201). A rubber support piece (207) is fixedly connected to the opposite end of the upper clamping plate (202) and the lower clamping plate (203). An annular connecting frame for connecting the lifting rods (201) is fixedly connected to the lifting rod (201).

3. The high-efficiency wafer uniform etching apparatus according to claim 2, characterized in that: The other ends of the upper clamping plate (202) and the lower clamping plate (203) are connected to a first nozzle (204), and the first nozzle (204) is mounted obliquely on the upper clamping plate (202) and the lower clamping plate (203) to drive the wafer to rotate while spraying the corrosive liquid. The lower clamping plate (203) and the upper clamping plate (202) are provided with channels for the flow of corrosive liquid, and the channels are connected to the first nozzle (204).

4. The high-efficiency wafer uniform etching apparatus according to claim 2, characterized in that: The lifting rod (201) is internally fixedly connected to a three-way pipe (205), and the upper part of the three-way pipe (205) is connected to a first corrugated pipe (206). The input end of the channel on the upper clamping plate (202) is connected to the output end of the first corrugated pipe (206), and the channel on the lower clamping plate (203) is connected to the lower output port of the three-way pipe (205).

5. The high-efficiency wafer uniform etching apparatus according to claim 4, characterized in that: The upper middle region of the three-way pipe (205) is connected to an annular circulation pipe (208) for connecting multiple limiting mechanisms (200). The input end of the bottom of the three-way pipe (205) is connected to the liquid pump, and the input end of the liquid pump is connected to the storage cavity (101).

6. The high-efficiency wafer uniform etching apparatus according to claim 1, characterized in that: The control mechanism (300) includes a limiting channel (301) fixedly connected to the lower clamping plate (203). The top of the limiting channel (301) is provided with a straight groove, and the inner bottom wall is provided with an arc groove.

7. The high-efficiency wafer uniform etching apparatus according to claim 6, characterized in that: The limiting channel (301) is internally slidably connected to a sliding block (302) that is adapted to the straight groove. The bottom of the sliding block (302) is fixedly connected to a damping rod, and the sliding block (302) is elastically connected to an arc-shaped compression block (303) through the damping rod. The arc-shaped compression block (303) is adapted to the arc-shaped groove.

8. The high-efficiency wafer uniform etching apparatus according to claim 7, characterized in that: A support rod (304) is fixedly connected to the top of the sliding block (302). The top of the support rod (304) slides in contact with the bottom surface of the upper clamping plate (202). A second corrugated pipe (305) is connected through one side of the support rod (304), and the input end of the second corrugated pipe (305) is connected through the three-way pipe (205). A second nozzle (306) is connected through the other side of the support rod (304).

9. The high-efficiency wafer uniform etching apparatus according to claim 2, characterized in that: The top of the lifting rod (201) located at the top of the wafer etching cylinder (100) is fixedly connected to a connecting rod, and the bottom is fixedly connected to a locking block (2011). The top of the wafer etching cylinder (100) is clamped with a sealing cover, and the top of the sealing cover is connected to an input pipe. The connecting rod passes through the wafer etching cylinder (100) and is inserted into a plug rod. A slot (2012) is fixedly connected to the top of the lifting rod (201) located at the bottom of the wafer etching cylinder (100). The top of the lifting rod (201) located in the middle of the wafer etching cylinder (100) is fixedly connected to a slot (2012), and the bottom is a block (2011).

10. The high-efficiency wafer uniform etching apparatus according to claim 1, characterized in that: A lifting assembly (400) is provided on one side of the wafer etching cylinder (100). The lifting assembly (400) includes a hydraulic rod fixedly connected to the top of the sealing cover. A connecting plate is fixedly connected to the bottom of the hydraulic rod, and one side of the connecting plate is fixedly connected to the outer wall of the wafer etching cylinder (100). An output pipe is connected through the bottom of the wafer etching cylinder (100), and an inlet pipe is connected through the storage cavity (101). The stirring component (500) includes a drive motor fixedly connected to the bottom surface of the wafer etching cylinder (100). The output end of the drive motor is splinedly connected to a stirring rod, and one end of the stirring rod passes through the wafer etching cylinder (100) and is fixedly connected to a turbine fan.

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