A method and apparatus for phase bit switching using white noise based on a parametric resonator

Abstract

The application discloses a method and device for phase bit switching using white noise based on a parameter resonator, and relates to the technical field of resonators. The method comprises the following steps: applying an initial bias voltage to a gate DC signal end of a graphene parameter resonator to be measured, and applying a parameter excitation signal to a gate RF signal end; continuously increasing the parameter excitation signal strength until the resonator enters a parameter vibration state, and under the condition, applying a direct driving signal to the gate RF signal end of the resonator, and applying white noise to the source end; gradually increasing the white noise strength from zero until the vibration phase is switched. The application can realize direct switching between two phase bit states, not only avoids the generation of phase noise, but also shortens the time consumed by scanning the direct driving signal frequency and the parameter excitation signal frequency.

Description

TECHNICAL FIELD

[0001] The present application relates to a method and device for phase bit switching using white noise based on a parameter resonator, belonging to the technical field of resonators. BACKGROUND

[0002] Electronic bits are the basic information units of modern electronic computing, representing binary information "0" and "1" through the physical state of electronic components (such as the conduction / cutoff of transistors, the charging / discharging of capacitors), whose core principle relies on charge or voltage changes, and they are implemented in chips through logic gate circuits for operation and storage, and are widely used in electronic devices such as computers and smartphones. However, electronic bits are limited by physical properties, have problems such as decreased stability at high temperatures, sensitivity to electromagnetic interference, and leakage caused by quantum tunneling effects at nanoscale, and the cost of heat dissipation increases significantly when integrated at high density.

[0003] Mechanical bits use the physical state of micro-mechanical structures (such as the vibration / rest of nanoresonators, the bending direction of microcantilevers) as information carriers, and distinguish "0" and "1" through mechanical movement, whose working principle is based on mechanical laws, such as using piezoelectric effect to drive nanoscale structure deformation, and then detecting the structure position state through optical signals. Mechanical bits perform outstandingly in extreme environments, with strong resistance to high temperature and electromagnetic interference, and the physical state changes of mechanical structures are less affected by quantum effects, remaining stable at sub-micron scales.

[0004] Compared with electronic bits, mechanical bits have the following significant advantages: first, they have stronger environmental adaptability and can operate stably in high-temperature, strong electromagnetic, and other scenarios where electronic components cannot work (such as industrial high-temperature environments and space radiation environments); second, they have better energy consumption characteristics, as the energy loss mode of mechanical movement is different from that of electronic components, resulting in lower power consumption at low frequencies; third, they have higher physical stability, avoiding the aging problems of electronic components caused by electron migration and oxidation, and have a longer service life; fourth, they have better compatibility with specific detection technologies, such as direct integration with mechanical sensors and optical detection systems, reducing errors in signal conversion links.

[0005] Parameter resonators provide an efficient physical carrier and control means for mechanical information processing in the field of mechanical bits. The core principle is to modulate the physical parameters (such as stiffness, mass, or damping) of the mechanical structure periodically, so that the system produces a parametric resonance response at a specific frequency, and then accurately controls the state of the mechanical bit. In addition, the integration of parameter resonators and mechanical bits has good compatibility. The microstructure (such as nanometer film) can be integrated with the carrier structure (such as microcantilever, nanowire) of the mechanical bit through micro-nano processing technology, reducing interface loss and improving system stability. In extreme environment applications, the mechanical resonance characteristics of parameter resonators are less affected by temperature and electromagnetic interference, which is complementary to the anti-interference advantage of mechanical bits, further expanding the application potential of mechanical information processing technology in harsh scenarios such as aerospace and nuclear energy monitoring.

[0006] In the information encoding layer of mechanical bits, the traditional method is to use the presence or absence of the resonance state of the parameter resonator to represent binary information. For example, when the resonator is in the resonance state, it corresponds to the "1" state of the mechanical bit; the non-resonance state corresponds to the "0" state. This encoding method based on resonance characteristics has the advantage that the amplitude of the mechanical bit signal has a significant difference, but the disadvantage is that the signal in the non-resonance state is too weak, and the vibration amplitude of different sizes of resonators has a large difference, so the two states of the mechanical bit must be redefined for each resonator.

[0007] Currently, a new method is to use the phase of the parameter vibration of the parameter resonator as a mechanical phase bit. For the parameter resonance state of the resonator, it has two degenerate vibration modes with the same amplitude and a phase difference of radian. This degeneracy can be removed by adding a direct drive in the parameter excitation. However, even if the vibration degeneracy is removed, the vibration phase cannot be easily selected. Usually, the scanning direction of the direct drive signal angular frequency and the parameter excitation signal angular frequency needs to be controlled by controlling the scanning direction of the direct drive signal angular frequency and the parameter excitation signal angular frequency so that they respectively scan through the resonance frequency from far below the resonance frequency and far above the resonance frequency, thereby selecting the phase of the non-degenerate state alone.

[0008] The advantage of this method is that no matter how different the size, material, and shape of the resonator are, the phase difference of the two degenerate states of the parameter vibration must be The method has the disadvantage that changing the driving frequency easily causes the driving waveform phase to be discontinuous in the time domain, thereby generating phase noise. For nanoresonators and high-frequency resonators, the existence of phase noise easily causes the resonator to randomly jump between two vibration phases, that is, the state of the mechanical phase bit cannot be stably controlled, and the process of scanning the direct driving signal frequency and the parameter excitation signal frequency takes a longer time. SUMMARY

[0009] The present application aims to overcome the deficiencies in the prior art and provide a method and device for switching phase bits using white noise based on a parameter resonator, which can directly switch between two phase bit states, thereby avoiding the generation of phase noise and shortening the time consumed by the process of scanning the direct driving signal frequency and the parameter excitation signal frequency.

[0010] To achieve the above-mentioned purpose, the present application is implemented by using the following technical solutions:

[0011] In one aspect, the present application provides a method for switching phase bits using white noise based on a parameter resonator, comprising:

[0012] applying an initial bias voltage to the gate DC signal end of the graphene parameter resonator to be tested;

[0013] applying a parameter excitation signal to the gate RF signal end of the graphene parameter resonator to be tested, wherein the driving frequency of the parameter excitation signal is set to twice the resonant frequency corresponding to the initial bias voltage;

[0014] continuously increasing the parameter excitation signal strength until the graphene parameter resonator to be tested enters a parameter vibration state;

[0015] under the condition that the graphene parameter resonator to be tested is in the parameter vibration state, applying a direct driving signal to the gate RF signal end of the graphene parameter resonator to be tested and applying white noise to the source thereof, wherein the driving frequency of the direct driving signal is set to the resonant frequency corresponding to the initial bias voltage, and the cutoff frequency of the white noise is set to be greater than the resonant frequency corresponding to the initial bias voltage;

[0016] gradually increasing the white noise strength from zero until the vibration phase of the graphene parameter resonator to be tested is switched.

[0017] Further, the method for determining the resonant frequency corresponding to the initial bias voltage comprises:

[0018] According to the vibration signal strength curve function of the graphene parameter resonator to be tested, the abscissa axis takes the initial bias voltage, and the driving frequency at which the vibration signal strength is maximum is the resonant frequency corresponding to the initial bias voltage;

[0019] Alternatively, an initial bias voltage is applied to the DC signal terminal of the gate of the graphene resonator under test, and a direct drive signal is applied to the RF signal terminal of the gate, while the parameter excitation signal is in the off state.

[0020] The driving frequency of the direct drive signal is continuously changed, and the vibration signal intensity corresponding to the driving frequency of each direct drive signal is recorded.

[0021] The driving frequency of the direct driving signal when the vibration signal intensity is at its maximum is the resonant frequency corresponding to the initial bias voltage.

[0022] Furthermore, the method for determining whether the graphene resonator under test has entered a parametric vibration state is as follows:

[0023] Determine the vibration signal intensity threshold;

[0024] As the excitation signal strength is gradually increased from zero, the vibration signal strength of the graphene resonator under test is observed until the vibration signal strength exceeds the vibration signal strength threshold, which indicates that the graphene resonator under test has entered the parametric vibration state.

[0025] The method for determining the vibration signal intensity threshold includes:

[0026] Based on the vibration signal intensity curve function of the driving frequency and bias voltage of the resonator of the graphene parameter under test, the horizontal axis is taken as the initial bias voltage, and the vertical axis is taken as the vibration signal intensity at the resonant frequency corresponding to the initial bias voltage, which is the vibration signal intensity threshold.

[0027] Alternatively, an initial bias voltage is applied to the DC signal terminal of the gate of the resonator of the graphene parameter under test, and a direct drive signal is applied to the RF signal terminal of the gate. The driving frequency of the direct drive signal is set to the resonant frequency corresponding to the initial bias voltage. The vibration signal intensity at this time is the vibration signal intensity threshold.

[0028] Furthermore, the method for obtaining the vibration signal intensity curve function of the driving frequency and bias voltage of the graphene resonator under test includes:

[0029] S1. Apply a direct drive signal to the gate RF signal terminal of the graphene resonator under test, while the parameter excitation signal is in the off state, and apply a bias voltage to the gate DC signal terminal.

[0030] S2. Select a bias voltage, keep the bias voltage constant, change the driving frequency of the direct driving signal within the preset driving frequency range, and measure the vibration signal intensity corresponding to each driving frequency.

[0031] S3. Select the next bias voltage, keep the bias voltage unchanged, change the driving frequency of the direct driving signal within the preset driving frequency range, and measure the vibration signal intensity corresponding to each driving frequency.

[0032] S4. Repeat S2~S4 until all bias voltages within the preset bias voltage range are selected. Combine the vibration signal intensity of the driving frequency and the bias voltage of the graphene parameter resonator under test with the driving frequency of the different direct driving signals corresponding to each bias voltage to obtain the vibration signal intensity curve function of the driving frequency and the bias voltage of the resonator under test.

[0033] Furthermore, the waveform amplitude of the direct drive signal satisfies the requirement that the graphene resonator under test is always in the linear vibration domain.

[0034] Furthermore, the waveform expression of the direct drive signal is as follows: ;

[0035] The waveform expression of the parameter excitation signal is as follows: ;

[0036] in, Indicates the direct drive angular frequency. This represents the phase difference between the direct drive signal and the parameter excitation signal. Indicates the excitation angular frequency. Indicates the amplitude of the direct drive signal waveform. This represents the amplitude of the excitation signal waveform. Indicates time.

[0037] Furthermore, the method for determining the switching of the vibration phase of the resonator of the graphene parameter under test includes:

[0038] D1. Under the current white noise intensity, set the phase difference between the direct drive signal and the parameter excitation signal to -135°, and record the vibration phase at this time as the first phase;

[0039] D2. Maintain the current white noise intensity, set the phase difference between the direct drive signal and the parameter excitation signal to 45°, and record the vibration phase at this time as the second phase;

[0040] D3. Repeat D1~D2 multiple times. When the difference between the first phase and the second phase recorded in the multiple repetitions is... When the radius is radian, the vibration phase of the resonator of the graphene parameter under test switches.

[0041] Furthermore, the graphene resonator under test was tested under vacuum conditions.

[0042] On the other hand, the present invention also provides a device for phase bit switching based on a parametric resonator using white noise, for implementing the method for phase bit switching based on a parametric resonator using white noise as described in any of the above claims, comprising a helium-neon laser, the helium-neon laser being used to emit a laser beam to a half-wave plate, the laser beam being transmitted to a polarizing beam splitter after the energy ratio of the horizontal polarization component and the vertical polarization component is adjusted by the half-wave plate, the polarizing beam splitter being used to reflect the vertical polarization component out of the optical path and to incident the horizontal polarization component onto an objective lens via a quarter-wave plate, a vacuum cavity being provided on the other side of the objective lens, the vacuum cavity being used to place a graphene parametric resonator to be tested, and the objective lens being used to focus the laser beam and incident it onto the surface of the graphene parametric resonator to be tested through the vacuum cavity;

[0043] The polarizing beam splitter is connected to a photodetector. The output of the photodetector is connected in sequence to a lock-in amplifier and an arbitrary waveform generator. The arbitrary waveform generator has two output ports. One output port is connected to the reference signal input of the lock-in amplifier, and the other output port is connected to the gate radio frequency signal of the graphene parameter resonator under test.

[0044] The gate DC signal terminal of the resonator of the graphene parameter under test is connected to a DC voltage source, and the source is connected to a noise generator.

[0045] Furthermore, the waveform expression of the reference signal is as follows: ;

[0046] in, Indicates the direct drive angular frequency. Indicates the amplitude of the reference signal waveform. Indicates time.

[0047] Compared with the prior art, the beneficial effects achieved by the present invention are as follows:

[0048] This invention encodes and stores information through the mechanical vibration of a graphene parametric resonator, rather than using charge or electron spin. This effectively avoids problems such as decreased stability at high temperatures and sensitivity to electromagnetic interference, and is suitable for environments with high temperatures and strong electromagnetic fields.

[0049] This invention utilizes white noise to achieve direct switching between two phase bit states, overcoming the technical barrier of trying to avoid white noise as an interference factor. It not only avoids the generation of phase noise, but also reduces the time consumed in the process of scanning the direct drive signal frequency and the parameter excitation signal frequency. Attached Figure Description

[0050] Figure 1 This is a schematic diagram of a device for phase bit switching based on a parametric resonator using white noise in one embodiment of the present invention;

[0051] Figure 2 This is a schematic cross-sectional view of the resonator with the graphene parameters to be tested in Embodiment 2 of the present invention;

[0052] Figure 3 This is a schematic diagram of the vibration signal intensity curve function of the driving frequency and gate voltage of the graphene parametric resonator under test in the phase bit switching method based on white noise using a parametric resonator in Embodiment 2 of the present invention.

[0053] Figure 4 This is a schematic diagram showing the changes in the vibration phase, noise intensity, and phase difference between the direct drive signal and the parameter excitation signal of the graphene parameter resonator under test in the phase bit switching method based on white noise using a parameter resonator in Embodiment 2 of the present invention. Detailed Implementation

[0054] The present invention will be further described below with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present invention, and should not be used to limit the scope of protection of the present invention. Example 1

[0055] like Figure 1 As shown, this embodiment of the invention provides a device for phase bit switching using white noise based on a parametric resonator, including a helium-neon laser. The helium-neon laser is used to emit a laser beam to a half-wave plate. The half-wave plate is used to adjust the energy ratio of the horizontal polarization component and the vertical polarization component. After passing through the half-wave plate, the laser beam is transmitted to a polarizing beam splitter. The polarizing beam splitter reflects the vertical polarization component out of the optical path and directs the horizontal polarization component to the objective lens through a quarter-wave plate.

[0056] A vacuum chamber is located on the other side of the objective lens. The interior of the vacuum chamber is used to place the graphene resonator under test. The objective lens is used to focus the laser beam and direct it through the vacuum chamber onto the surface of the graphene resonator under test. A polarizing beam splitter is connected to a photodetector. The laser beam emitted from the surface of the graphene resonator under test passes through the objective lens and a quarter-wave plate, and its polarization direction becomes perpendicular. Therefore, the emitted laser beam cannot pass through the polarizing beam splitter but is reflected into the photodetector.

[0057] The output of the photodetector is sequentially connected to a lock-in amplifier and an arbitrary waveform generator. The arbitrary waveform generator has two output ports: one is connected to the reference signal input of the lock-in amplifier, and the other is connected to the gate RF signal terminal of the graphene resonator under test. The photodetector receives the laser beam reflected from the surface of the graphene resonator under test, converts the optical signal into an electrical signal, and transmits it to the lock-in amplifier. The lock-in amplifier is used to measure the phase of the vibration of the graphene resonator under test. The arbitrary waveform generator is used to transmit the reference signal to the lock-in amplifier and to apply the parameter excitation signal and direct drive signal to the gate of the graphene resonator under test.

[0058] In this embodiment, the waveform expression of the reference signal is: ;

[0059] in, Indicates the direct drive angular frequency. Indicates the amplitude of the reference signal waveform. Indicates time.

[0060] A DC voltage source is connected to the gate DC signal terminal of the graphene parameter resonator under test, and a noise generator is connected to the source terminal. The DC voltage source is used to apply a bias voltage to the gate of the graphene parameter resonator under test, and the noise generator is used to apply white noise to the source terminal of the graphene parameter resonator under test. Example 2

[0061] Based on Example 1, this example provides a method for phase bit switching using white noise based on a parametric resonator, specifically including the following steps:

[0062] First, it should be clarified that the structure of the resonator for the graphene parameters under test in this embodiment is as follows: Figure 2 As shown, green represents the graphene film, yellow represents the electrodes, the electrode on the right that is not in contact with the graphene is the gate electrode, the electrode on the left that is in contact with the graphene is the source electrode, and gray represents silicon dioxide. The graphene film is suspended above a circular cavity with a diameter of 3 micrometers.

[0063] The graphene resonator to be tested is placed in the vacuum chamber of the device described in Example 1 to ensure that the graphene resonator to be tested is tested under vacuum conditions throughout the process, and the graphene film of the graphene resonator to be tested faces the objective lens.

[0064] An initial bias voltage is applied to the gate DC signal terminal of the graphene resonator under test. The initial bias voltage is selected only to ensure that the graphene resonator under test is in a linear vibration mode. In this embodiment, the initial bias voltage is 11V.

[0065] A parameter excitation signal (with the direct drive signal off) is applied to the gate RF signal terminal of the graphene parametric resonator under test. The driving frequency of the parameter excitation signal is set to twice the resonant frequency corresponding to the initial bias voltage.

[0066] In this embodiment, the waveform expression of the parameter excitation signal is as follows: ,in, This represents the amplitude of the excitation signal waveform. Indicates time, This indicates the excitation angular frequency.

[0067] There are two methods for determining the resonant frequency corresponding to the initial bias voltage:

[0068] Method 1 is based on the vibration signal intensity curve function of the driving frequency and bias voltage of the resonator of the graphene under test. The horizontal axis is taken as the initial bias voltage, and the driving frequency when the vibration signal intensity is the maximum is the resonant frequency corresponding to the initial bias voltage.

[0069] The methods for obtaining the vibration signal intensity curves of the driving frequency and bias voltage of the graphene resonator under test include:

[0070] S1. Apply a direct drive signal to the gate RF signal terminal of the graphene resonator under test, while the parameter excitation signal is in the off state, and apply a bias voltage to the gate DC signal terminal.

[0071] It should be noted that the waveform amplitude of the direct drive signal is such that the resonator of the graphene under test is always in the linear vibration field, that is, the waveform amplitude of the direct drive signal is linearly related to the intensity of the vibration signal. In this embodiment, the waveform amplitude of the direct drive signal is 6 mVpp.

[0072] S2. Select a bias voltage, keep the bias voltage constant, change the driving frequency of the direct driving signal within the preset driving frequency range, and measure the vibration signal intensity corresponding to each driving frequency.

[0073] S3. Select the next bias voltage, keep the bias voltage unchanged, change the driving frequency of the direct driving signal within the preset driving frequency range, and measure the vibration signal intensity corresponding to each driving frequency.

[0074] S4. Repeat S2~S4 until all bias voltages within the preset bias voltage range have been selected. The vibration signal intensity curve function of the driving frequency and bias voltage of the resonator under test is obtained by combining the vibration signal intensity at the driving frequency of different direct driving signals corresponding to each bias voltage. Figure 3 As shown, the greater the vibration signal intensity, the greater the corresponding brightness. According to... Figure 3It can be seen that the driving signal intensity curve of resonant frequency and bias voltage is "V-shaped". The point on the V-shape is the driving frequency of the direct driving signal corresponding to the maximum vibration signal intensity under a bias voltage, that is, the resonant frequency corresponding to this bias voltage.

[0075] Method two involves applying an initial bias voltage to the DC signal terminal of the gate of the graphene resonator under test, and applying a direct drive signal to the RF signal terminal of the gate, while keeping the parameter excitation signal off. The driving frequency of the direct drive signal is continuously changed, and the vibration signal intensity corresponding to each driving frequency is recorded. The driving frequency of the direct drive signal at which the vibration signal intensity is maximum is the resonant frequency corresponding to the initial bias voltage.

[0076] The intensity of the excitation signal is continuously increased until the graphene resonator under test enters the parametric vibration state. The method for determining whether the graphene resonator under test has entered the parametric vibration state is as follows:

[0077] First, determine the vibration signal intensity threshold, which can be done in two ways:

[0078] Method 1 is based on the vibration signal intensity curve function of the driving frequency and bias voltage of the resonator of the graphene parameter to be tested. The horizontal axis is taken as the initial bias voltage, and the vertical axis is taken as the vibration signal intensity at the resonant frequency corresponding to the initial bias voltage, which is the vibration signal intensity threshold.

[0079] Method 2 involves applying an initial bias voltage to the DC signal terminal of the gate of the graphene resonator under test, and applying a direct drive signal to the RF signal terminal of the gate. The driving frequency of the direct drive signal is set to the resonant frequency corresponding to the initial bias voltage. The vibration signal intensity at this time is the vibration signal intensity threshold.

[0080] Based on the determined vibration signal intensity threshold, the vibration signal intensity of the graphene parametric resonator under test is observed as the excitation signal intensity is gradually increased from zero. When the graphene parametric resonator under test has not entered the parametric vibration state, the vibration signal intensity will always be significantly lower than the recorded threshold. When the vibration signal intensity suddenly exceeds the recorded vibration signal intensity threshold, it indicates that the graphene parametric resonator under test has entered the parametric vibration state.

[0081] With the graphene resonator under test in a parametric vibration state, a direct drive signal (with a parametric excitation signal present simultaneously) is applied to the gate RF signal terminal of the graphene resonator under test, and white noise is applied to its source. The driving frequency of the direct drive signal is set to the resonant frequency corresponding to the initial bias voltage to disrupt the degeneracy of the parametric vibration of the graphene resonator under test. The cutoff frequency of the white noise is set to be higher than the resonant frequency corresponding to the initial bias voltage.

[0082] In this embodiment, the waveform expression of the direct drive signal is: ,in, Indicates the amplitude of the direct drive signal waveform. Indicates the direct drive angular frequency. Indicates time, This represents the phase difference between the direct drive signal and the parameter excitation signal.

[0083] The white noise intensity is gradually increased from zero until the vibration phase of the resonator of the graphene parameter under test switches. The methods for determining when the vibration phase of the resonator of the graphene parameter under test switches include:

[0084] D1. Under the current white noise intensity, set the phase difference between the direct drive signal and the parameter excitation signal to -135°, and record the vibration phase at this time as the first phase.

[0085] D2. Maintain the current white noise intensity, set the phase difference between the direct drive signal and the parameter excitation signal to 45°, and record the vibration phase at this time as the second phase.

[0086] D3. Repeat D1~D2 multiple times. When the difference between the first phase and the second phase recorded in the multiple repetitions is... When the radius is radian, the vibration phase of the resonator of the graphene parameter under test switches.

[0087] like Figure 4 As shown, since the parametric vibration itself can maintain its phase state, and in this method, the phase state and the phase difference between the direct driving signal and the parametric excitation signal are... The correlation is strong, therefore the mechanical phase bits can be flipped and stored through the following operations:

[0088] Flip the phase bit to "0" and save: Set to -135°, then apply white noise that meets the phase switching requirements and maintain it (typically on the order of milliseconds). Figure 4 (The interval is 500 milliseconds), then the white noise is turned off, at which point the phase of the resonator's parametric vibration switches to the "0" state.

[0089] Flip the phase bit to " "State and save: will" Set to 45°, then apply white noise that meets the phase switching requirements and maintain it (typically on the order of milliseconds). Figure 4 (The interval is 500 milliseconds), then the white noise is turned off, at which point the phase of the resonator's parametric oscillation switches to " "state.

[0090] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for phase bit switching using white noise based on a parametric resonator, characterized in that, include: An initial bias voltage is applied to the gate DC signal terminal of the resonator of the graphene parameter under test; A parameter excitation signal is applied to the gate RF signal terminal of the graphene parametric resonator under test, wherein the driving frequency of the parameter excitation signal is set to twice the resonant frequency corresponding to the initial bias voltage. The intensity of the parameter excitation signal is continuously increased until the graphene resonator under test enters the parameter vibration state. The method for determining whether the graphene resonator under test has entered the parameter vibration state is as follows: Determine the vibration signal intensity threshold; As the excitation signal strength is gradually increased from zero, the vibration signal strength of the graphene resonator under test is observed until the vibration signal strength exceeds the vibration signal strength threshold, which indicates that the graphene resonator under test has entered the parametric vibration state. The method for determining the vibration signal intensity threshold includes: Based on the vibration signal intensity curve function of the driving frequency and bias voltage of the resonator of the graphene parameter under test, the horizontal axis is taken as the initial bias voltage, and the vertical axis is taken as the vibration signal intensity at the resonant frequency corresponding to the initial bias voltage, which is the vibration signal intensity threshold. Alternatively, an initial bias voltage is applied to the DC signal terminal of the gate of the resonator of the graphene parameter under test, and a direct drive signal is applied to the RF signal terminal of the gate. The driving frequency of the direct drive signal is set to the resonant frequency corresponding to the initial bias voltage. The vibration signal intensity at this time is the vibration signal intensity threshold. Under the condition that the graphene parameter resonator under test is in a parametric vibration state, a direct drive signal is applied to the gate radio frequency signal terminal of the graphene parameter resonator under test, and white noise is applied to its source. The waveform amplitude of the direct drive signal is such that the graphene parameter resonator under test is always in the linear vibration field. The driving frequency of the direct drive signal is set to the resonant frequency corresponding to the initial bias voltage, and the cutoff frequency of the white noise is set to be greater than the resonant frequency corresponding to the initial bias voltage. The intensity of the white noise is gradually increased from zero until the vibration phase of the resonator of the graphene under test switches. The method for determining the switching of the vibration phase of the resonator with the graphene parameters under test includes: D1. Under the current white noise intensity, set the phase difference between the direct drive signal and the parameter excitation signal to -135°, and record the vibration phase at this time as the first phase; D2. Maintain the current white noise intensity, set the phase difference between the direct drive signal and the parameter excitation signal to 45°, and record the vibration phase at this time as the second phase; D3. Repeat D1~D2 multiple times. When the difference between the first phase and the second phase recorded in the multiple repetitions is... When the radius is radian, the vibration phase of the resonator of the graphene under test switches; The operations for flipping and storing mechanical phase bits include: Flip the phase bit to "0" and save: Set it to -135°, then apply and maintain white noise that meets the phase switching requirements, and then turn off the white noise. At this time, the phase of the resonator's parametric vibration switches to the "0" state. Flip the phase bits to " "State and save: will" Set the angle to 45°, then apply and maintain white noise that meets the phase switching requirements, then turn off the white noise. At this point, the phase of the resonator's parametric oscillation switches to " "State, in which the duration of white noise is on the order of milliseconds.

2. The method for phase bit switching using white noise based on a parametric resonator according to claim 1, characterized in that, The method for determining the resonant frequency corresponding to the initial bias voltage includes: Based on the vibration signal intensity curve function of the driving frequency and bias voltage of the resonator of the graphene parameter under test, the horizontal axis is taken as the initial bias voltage, and the driving frequency when the vibration signal intensity is the maximum is the resonant frequency corresponding to the initial bias voltage. Alternatively, an initial bias voltage is applied to the DC signal terminal of the gate of the graphene resonator under test, and a direct drive signal is applied to the RF signal terminal of the gate, while the parameter excitation signal is in the off state. The driving frequency of the direct drive signal is continuously changed, and the vibration signal intensity corresponding to the driving frequency of each direct drive signal is recorded. The driving frequency of the direct driving signal when the vibration signal intensity is at its maximum is the resonant frequency corresponding to the initial bias voltage.

3. The method for phase bit switching using white noise based on a parametric resonator according to claim 1 or 2, characterized in that, The method for obtaining the vibration signal intensity curve function of the driving frequency and bias voltage of the resonator of the graphene parameter under test includes: S1. Apply a direct drive signal to the gate RF signal terminal of the graphene resonator under test, while the parameter excitation signal is in the off state, and apply a bias voltage to the gate DC signal terminal. S2. Select a bias voltage, keep the bias voltage constant, change the driving frequency of the direct driving signal within the preset driving frequency range, and measure the vibration signal intensity corresponding to each driving frequency. S3. Select the next bias voltage, keep the bias voltage unchanged, change the driving frequency of the direct driving signal within the preset driving frequency range, and measure the vibration signal intensity corresponding to each driving frequency. S4. Repeat S2~S4 until all bias voltages within the preset bias voltage range are selected. Combine the vibration signal intensity of the driving frequency and the bias voltage of the graphene parameter resonator under test with the driving frequency of the different direct driving signals corresponding to each bias voltage to obtain the vibration signal intensity curve function of the driving frequency and the bias voltage of the resonator under test.

4. The method for phase bit switching using white noise based on a parametric resonator according to claim 1, characterized in that, The waveform expression of the direct drive signal is as follows: ; The waveform expression of the parameter excitation signal is as follows: ; in, Indicates the direct drive angular frequency. This represents the phase difference between the direct drive signal and the parameter excitation signal. Indicates the excitation angular frequency. Indicates the amplitude of the direct drive signal waveform. This represents the amplitude of the excitation signal waveform. Indicates time.

5. The method for phase bit switching using white noise based on a parametric resonator according to claim 1, characterized in that, The graphene resonator under test was tested under vacuum conditions.

6. A device for phase bit switching using white noise based on a parametric resonator, characterized in that, The method for phase bit switching using white noise based on a parametric resonator as described in any one of claims 1 to 5 includes a helium-neon laser, which emits a laser beam to a half-wave plate. The laser beam is transmitted to a polarizing beam splitter after the energy ratio of the horizontal polarization component and the vertical polarization component is adjusted by the half-wave plate. The polarizing beam splitter reflects the vertical polarization component out of the optical path and incident the horizontal polarization component onto an objective lens through a quarter-wave plate. A vacuum cavity is provided on the other side of the objective lens. The vacuum cavity is used to place the graphene parametric resonator under test. The objective lens is used to focus the laser beam and incident it onto the surface of the graphene parametric resonator under test through the vacuum cavity. The polarizing beam splitter is connected to a photodetector. The output of the photodetector is connected in sequence to a lock-in amplifier and an arbitrary waveform generator. The arbitrary waveform generator has two output ports. One output port is connected to the reference signal input of the lock-in amplifier, and the other output port is connected to the gate radio frequency signal of the graphene parameter resonator under test. The gate DC signal terminal of the resonator of the graphene parameter under test is connected to a DC voltage source, and the source is connected to a noise generator.

7. The device for phase bit switching using white noise based on a parametric resonator according to claim 6, characterized in that, The waveform expression of the reference signal is as follows: ; in, Indicates the direct drive angular frequency. Indicates the amplitude of the reference signal waveform. Indicates time.

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