Impedance matching circuit and radio frequency power supply system
By combining variable capacitive reactance unit, power supply unit and control unit, and utilizing the unidirectional conduction characteristics and voltage regulation of semiconductor devices, the problem of slow adjustment speed of impedance matching circuit is solved, and fast and accurate impedance matching is achieved.
Patent Information
- Application Number
- CN202511060946.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-30
- Publication Date
- 2025-11-14
AI Technical Summary
Existing impedance matching circuits are slow to adjust and difficult to achieve impedance matching quickly.
By employing a combination of a variable capacitive reactance unit, a power supply unit, and a control unit, and by configuring semiconductor devices with unidirectional conduction characteristics, the control unit adjusts the AC voltage output of the power supply unit to achieve rapid adjustment of the capacitive reactance value to match the impedance.
It achieves faster impedance matching speed, eliminates the need for electronic components such as capacitors, provides multiple adjustment methods and more accurate capacitive reactance values, and improves impedance matching performance.
Smart Images
Figure CN120956236A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of radio frequency technology, and in particular to an impedance matching circuit and a radio frequency power supply system. Background Technology
[0002] Currently, with the widespread adoption of radio frequency (RF) technology, RF power supply systems are increasingly used in various fields, and the requirements for impedance matching in these applications are becoming increasingly stringent. However, current impedance matching circuits often use a rotating motor to adjust the capacitor to provide the appropriate capacitive reactance, which is slow and makes it difficult to provide rapid impedance matching. Therefore, improving the speed of impedance matching and achieving it more quickly has become a crucial issue. Summary of the Invention
[0003] This application provides an impedance matching circuit and an RF power supply system, which can improve the speed of impedance matching and achieve impedance matching more quickly.
[0004] Firstly, an impedance matching circuit is provided, comprising a variable capacitive reactance unit, a power supply unit, and a control unit. The variable capacitive reactance unit includes a first pair of semiconductor devices, comprising two first semiconductor devices connected in series, one of which is connected to a radio frequency power transmission path. Both first semiconductor devices have unidirectional conduction characteristics, and the two first semiconductor devices as a whole have a capacitive reactance value, with opposite directions of unidirectional conduction. The power supply unit is connected to the two first semiconductor devices and is used to output AC power. The control unit is connected to the power supply unit and is used to control and adjust the voltage value of the AC power output by the power supply unit. The overall capacitive reactance value of the two first semiconductor devices changes with the voltage value of the AC power.
[0005] In one possible implementation, the impedance matching circuit further includes an impedance acquisition unit connected to the transmission path to acquire the impedance value of the transmission path. The impedance acquisition unit is also connected to the control unit. The control unit receives the impedance value of the transmission path and, based on the variable capacitive reactance curve and the impedance value of the transmission path, controls the voltage of the AC power to be adjusted to a target voltage value, such that the overall capacitive reactance value of the two first semiconductor devices is the target capacitive reactance value. The variable capacitive reactance curve is at least derived from a first curve, which represents the correspondence between the voltage value of the AC power and the overall capacitive reactance value of the two first semiconductor devices.
[0006] In one possible implementation, the variable capacitive reactance unit further includes a second pair of semiconductor devices, comprising two second semiconductor devices connected in series, one of which is connected to the transmission path. Both second semiconductor devices exhibit unidirectional conduction characteristics, have an overall capacitive reactance value, and their unidirectional conduction directions are opposite. The power supply unit is connected to the two second semiconductor devices, and the control unit is used to control and adjust the voltage of the AC power to the target voltage value, such that the capacitive reactance value of the two first semiconductor devices and the overall capacitive reactance value of the two second semiconductor devices corresponds to the target capacitive reactance value. The variable capacitive reactance curve is obtained from both the first curve and the second curve, where the second curve represents the correspondence between the voltage value of the AC power and the overall capacitive reactance value of the two second semiconductor devices.
[0007] In one possible implementation, the power supply unit includes a first AC source and a second AC source. The first AC source is connected to the two first semiconductor devices, and the second AC source is connected to the two second semiconductor devices. Both the first and second AC sources are used to output AC power. The control unit is configured to adjust the voltage of the AC power output from the first AC source to a corresponding target voltage value based on the first curve and the impedance value of the transmission path, and to adjust the voltage of the AC power output from the second AC source to a corresponding target voltage value based on the second curve and the impedance value of the transmission path.
[0008] In one possible implementation, the control unit is configured to control and adjust the voltage value of the AC power output by the first AC source within a first voltage range, and to control and adjust the voltage value of the AC power output by the second AC source within a second voltage range. Wherein, any voltage value within the first voltage range is less than or equal to the minimum voltage value within the second voltage range.
[0009] In one possible implementation, the two first semiconductor devices include a first diode and a second diode, each including a first electrode and a second electrode. The first electrode of the first diode is connected to the transmission path and the other end of the power supply unit. The second electrode of the first diode is connected to the second electrode of the second diode and one end of the power supply unit. The second electrode of the second diode is connected to one end of the power supply unit, and the first electrode of the second diode is connected to the other end of the power supply unit. Alternatively, the two first semiconductor devices include a first transistor and a second transistor, each including a first electrode and a second electrode. The first electrode of the first transistor is connected to the transmission path and the other end of the power supply unit. The second electrode of the first transistor is connected to the second electrode of the second transistor and one end of the power supply unit. The second electrode of the second transistor is connected to one end of the power supply unit, and the first electrode of the second transistor is connected to the other end of the power supply unit.
[0010] In one possible implementation, the impedance matching circuit further includes an isolation unit connected to both the power supply unit and the two first semiconductor devices, the isolation unit being used to isolate the power supply unit from the variable capacitive reactance unit.
[0011] In one possible implementation, the isolation unit includes a first inductor, a second inductor, and a third inductor. One end of the first inductor is connected to one end of the power supply unit, and the other end of the first inductor is connected to the connection point between the two first semiconductor devices. One end of the second inductor is connected to the other end of the power supply unit, and the other end of the second inductor is connected to the connection point between one of the first semiconductor devices and the transmission path. One end of the third inductor is connected to the other end of the power supply unit, and the other end of the third inductor is connected to the end of another first semiconductor device that is not connected to one of the first semiconductor devices. The inductance values of the first inductor, the second inductor, and the third inductor are all greater than an inductance threshold.
[0012] In one possible implementation, the power supply unit includes a first AC source, one end of which is connected to a connection point between the two first semiconductor devices, the other end of which is connected to a connection point between one of the first semiconductor devices and the transmission path, and the other end of which is connected to the end of another first semiconductor device that is not connected to the first semiconductor device. The first AC source is used to output the AC power.
[0013] Secondly, a radio frequency (RF) power supply system is also provided, comprising an RF power supply device, a transmission path, and an impedance matching circuit. The impedance matching circuit includes a variable capacitive reactance unit, a power supply unit, and a control unit. The variable capacitive reactance unit includes a first pair of semiconductor devices, comprising two first semiconductor devices connected in series, one of which is connected to the RF power transmission path. Both first semiconductor devices have unidirectional conduction characteristics, and the two first semiconductor devices as a whole have a capacitive reactance value, with opposite unidirectional conduction directions. The power supply unit is connected to the two first semiconductor devices and is used to output AC power. The control unit is connected to the power supply unit and is used to control and adjust the voltage value of the AC power output by the power supply unit. The overall capacitive reactance value of the two first semiconductor devices changes with the voltage value of the AC power.
[0014] The impedance matching circuit and RF power supply system of this application, through the configuration of a variable capacitive reactance unit, a power supply unit, and a control unit, and by using two first semiconductor devices with unidirectional conduction characteristics in opposite directions, enables the two first semiconductor devices to exhibit corresponding capacitive reactance values under AC power conditions. Furthermore, the overall capacitive reactance value of the two first semiconductor devices can change with the voltage value of the AC power. By configuring the control unit to control and adjust the voltage value of the AC power output by the power supply unit, the overall capacitive reactance value of the two first semiconductor devices can be quickly adjusted to improve the impedance matching speed and achieve impedance matching more quickly, without the need to use electronic components such as capacitors. Attached Figure Description
[0015] To more clearly illustrate the technical solutions in the embodiments of this application or the background art, the accompanying drawings used in the embodiments of this application or the background art will be described below.
[0016] Figure 1 This is a schematic diagram of the impedance matching circuit in some embodiments of this application.
[0017] Figure 2 The impedance matching circuit in some embodiments of this application also includes an impedance acquisition unit.
[0018] Figure 3 This is a graph of the first curve and the second curve in some embodiments of this application.
[0019] Figure 4 This is yet another schematic diagram of the impedance matching circuit in some embodiments of this application.
[0020] Figure 5This is another schematic diagram of the impedance matching circuit in some embodiments of this application.
[0021] Figure 6 This is a schematic diagram of a variable capacitive reactance unit in some embodiments of this application.
[0022] Figure 7 This is yet another schematic diagram of a variable capacitive reactance unit in some embodiments of this application.
[0023] Figure 8 The impedance matching circuit in some embodiments of this application also includes an isolation unit.
[0024] Figure 9 This is a schematic diagram of a radio frequency power supply system in some embodiments of this application.
[0025] Figure reference numerals: 10, Impedance matching circuit; 100, Variable capacitive reactance unit; D1, First diode; D2, Second diode; D3, Third diode; D4, Fourth diode; M1, First transistor; M2, Second transistor; 200, Power supply unit; P1, First AC source; P2, Second AC source; AC1, AC power; 300, Control unit; 400, Impedance acquisition unit; 500, Isolation unit; L1, First inductor; L2, Second inductor; L3, Third inductor; S1, First curve; S2, Second curve; d1, First voltage range; d2, Second voltage range; 20, Transmission path; RFP, Radio frequency power; GND, Ground; 30, Radio frequency power supply device; 40, Load; 1000, Radio frequency power supply system. Detailed Implementation
[0026] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.
[0027] In the description of the embodiments of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0028] Hereinafter, the terms "first," "second," "third," and "fourth" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first," "second," "third," or "fourth" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this application, unless otherwise stated, "a plurality of" means two or more.
[0029] Furthermore, the terms “comprising” and “having”, and any variations thereof, are intended to cover non-exclusive inclusion, such that a process, method, system, product, or server that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such processes, methods, products, or devices.
[0030] Please see Figure 1 , Figure 1 This is a schematic diagram of the impedance matching circuit in some embodiments of this application. For example... Figure 1 As shown, this application provides an impedance matching circuit 10, which includes a variable capacitive reactance unit 100, a power supply unit 200, and a control unit 300. The variable capacitive reactance unit 100 includes a first pair of semiconductor devices, comprising two first semiconductor devices connected in series. One of the first semiconductor devices is used to connect to the transmission path 20 of the radio frequency power RFP. Both first semiconductor devices have unidirectional conduction characteristics, and both first semiconductor devices have an overall capacitive reactance value, with opposite unidirectional conduction directions. The power supply unit 200 is connected to the two first semiconductor devices and is used to output AC power AC1. The control unit 300 is connected to the power supply unit 200 and is used to control and adjust the voltage value of the AC power AC1 output by the power supply unit 200. The overall capacitive reactance value of the two first semiconductor devices changes with the voltage value of the AC power AC1.
[0031] Therefore, the impedance matching circuit 10 described above in this application, through the configuration of the variable capacitive reactance unit 100, the power supply unit 200, and the control unit 300, and by having two first semiconductor devices with unidirectional conduction characteristics in opposite directions, enables the two first semiconductor devices to exhibit corresponding capacitive reactance values under AC power AC1. Furthermore, the capacitive reactance value of the two first semiconductor devices can change with the voltage value of AC power AC1. Thus, by configuring the control unit 300 to control and adjust the voltage value of AC power AC1 output by the power supply unit 200, the capacitive reactance value of the two first semiconductor devices can be quickly adjusted to improve the impedance matching speed, achieve impedance matching more quickly, and eliminate the need for electronic components such as capacitors.
[0032] Among them, such as Figure 1 The first diode D1 and the second diode D2 shown are two first semiconductor devices. That is, the first pair of semiconductor devices may include the first diode D1 and the second diode D2.
[0033] In some embodiments, another first semiconductor device is connected to ground (GND).
[0034] Furthermore, the positive terminal of the power supply unit 200 can be connected to the connection point between the two first semiconductor devices, and the negative terminal of the power supply unit 200 can be connected to the connection point between one of the first semiconductor devices and the transmission path 20 of the radio frequency power RFP, and connected to the connection point between the other first semiconductor device and ground GND.
[0035] Specifically, generally speaking, the power value of radio frequency power (RFP) is relatively high, such as 1kW, 1.5kW, or 2kW, while the power value of AC power (AC1) can be 5W or 10W, which basically has no impact on the transmission of radio frequency power (RFP). For example, the power value of AC power (AC1) can be less than or equal to 1% of the power value of radio frequency power (RFP).
[0036] Please refer to the following: Figure 2 , Figure 3 , Figure 2 The diagram below shows that the impedance matching circuit in some embodiments of this application also includes an impedance acquisition unit. Figure 3 This is a graph of the first and second curves in some embodiments of this application. For example... Figure 2 , Figure 3 As shown, the impedance matching circuit 10 further includes an impedance acquisition unit 400, which is connected to the transmission path 20 to acquire the impedance value of the transmission path 20. The impedance acquisition unit 400 is also connected to the control unit 300. The control unit 300 receives the impedance value of the transmission path 20 and, based on the variable capacitive reactance curve and the impedance value of the transmission path 20, controls and adjusts the voltage of the AC power AC1 to a target voltage value, so that the overall capacitive reactance value of the two first semiconductor devices is correspondingly the target capacitive reactance value. The variable capacitive reactance curve is obtained at least from the first curve S1, which represents the correspondence between the voltage value of the AC power AC1 and the overall capacitive reactance value of the two first semiconductor devices.
[0037] Therefore, the impedance matching circuit 10 described above in this application, by configuring the impedance acquisition unit 400, can acquire the impedance value of the transmission path 20, thereby enabling the control unit 300 to control and adjust the voltage value of the AC power AC1 to the target voltage value according to the variable capacitive reactance curve and the impedance value of the transmission path 20, so that the overall capacitive reactance value of the two first semiconductor devices is the target capacitive reactance value, and impedance matching is achieved more quickly.
[0038] In some embodiments, the control unit 300 can be used to control and adjust the voltage value of the AC power AC1 to different voltage values, obtain a first curve S1 representing the correspondence between the voltage value of the AC power AC1 and the capacitive reactance value of the two first semiconductor devices as a whole, and obtain a variable capacitive reactance curve based at least on the first curve S1.
[0039] Please refer to the following: Figure 4 , Figure 4 This is yet another schematic diagram of the impedance matching circuit in some embodiments of this application. For example... Figure 3 , Figure 4 As shown, the variable capacitive reactance unit 100 further includes a second pair of semiconductor devices. The second pair of semiconductor devices comprises two second semiconductor devices connected in series, with one of the second semiconductor devices connected to the transmission path 20. Both second semiconductor devices have unidirectional conduction characteristics, and the two second semiconductor devices as a whole have a capacitive reactance value, with the unidirectional conduction directions of the two second semiconductor devices being opposite. A power supply unit 200 is connected to the two second semiconductor devices. A control unit 300 is used to control and adjust the voltage of the AC power AC1 to a target voltage value, so that the capacitive reactance value of the two first semiconductor devices and the two second semiconductor devices as a whole corresponds to the target capacitive reactance value. The variable capacitive reactance curve is obtained from both the first curve S1 and the second curve S2. The second curve S2 represents the correspondence between the voltage value of the AC power AC1 and the capacitive reactance value of the two second semiconductor devices as a whole.
[0040] Therefore, the impedance matching circuit 10 described above in this application, by configuring the second pair of semiconductor devices, can flexibly fit a variable capacitive reactance curve according to specific circumstances, thereby achieving better impedance matching.
[0041] Among them, such as Figure 4 The third diode D3 and the fourth diode D4 shown are two second semiconductor devices. That is, the second pair of semiconductor devices may include the third diode D3 and the fourth diode D4.
[0042] Specifically, the capacitive reactance values of the first curve S1 at different voltage values are summed with the corresponding capacitive reactance values of the second curve S2 to obtain a variable capacitive reactance curve.
[0043] In some embodiments, the manufacturing parameters of the first pair of semiconductor devices and the second pair of semiconductor devices are at least partially the same, and the conduction directions of one of the first semiconductor devices and the other semiconductor device are the same, so that the first curve S1 and the second curve S2 coincide. Specifically, the first pair of semiconductor devices and the second pair of semiconductor devices can be diodes of the same type, using the same semiconductor materials, manufactured from the same batch, and with at least partially identical manufacturing parameters. Specifically, "at least partially identical manufacturing parameters" can mean that the core manufacturing parameters such as doping concentration and junction structure are the same, or that the ranges of the manufacturing parameters at least partially overlap, for example, the doping concentration ranges of the first pair of semiconductor devices and the second pair of semiconductor devices at least partially overlap. Alternatively, the first pair of semiconductor devices and the second pair of semiconductor devices can be considered the same semiconductor device. Furthermore, the overlap range of the manufacturing parameters of the first pair of semiconductor devices and the second pair of semiconductor devices is greater than a preset percentage, where the preset percentage can be 97%, 98%, 99%, etc. This allows for faster impedance matching.
[0044] Please refer to the following: Figure 5 , Figure 5 This is another schematic diagram of the impedance matching circuit in some embodiments of this application. For example... Figure 4 , Figure 5 As shown, the power supply unit 200 includes a first AC source P1 and a second AC source P2. The first AC source P1 is connected to two first semiconductor devices, and the second AC source P2 is connected to two second semiconductor devices. Both the first AC source P1 and the second AC source P2 are used to output AC power AC1. The control unit 300 is used to control and adjust the voltage of the AC power AC1 output by the first AC source P1 to a corresponding target voltage value based on the first curve S1 and the impedance value of the transmission path 20, and to control and adjust the voltage of the AC power AC1 output by the second AC source P2 to a corresponding target voltage value based on the second curve S2 and the impedance value of the transmission path 20.
[0045] Therefore, the impedance matching circuit 10 described above in this application, by configuring the power supply unit 200 to include a first AC source P1 and a second AC source P2, can control and adjust the voltage value of the AC power AC1 output by the first AC source P1 to the corresponding target voltage value, and control and adjust the voltage value of the AC power AC1 output by the second AC source P2 to the corresponding target voltage value as needed.
[0046] In other embodiments, please refer again. Figure 3 .like Figure 3As shown, Xc is the capacitive reactance, and V is the voltage. The manufacturing parameters of the first pair of semiconductor devices and the second pair of semiconductor devices are different, and one of the first semiconductor devices has the same conduction direction as the other, so that the first curve S1 and the second curve S2 do not coincide. For example... Figure 3 , Figure 5 As shown, the control unit 300 is used to control and adjust the voltage value of the AC power AC1 output by the first AC source P1 within a first voltage value range d1, and to control and adjust the voltage value of the AC power AC1 output by the second AC source P2 within a second voltage value range d2. Wherein, any voltage value in the first voltage value range d1 is less than or equal to the minimum voltage value in the second voltage value range d2.
[0047] Therefore, the impedance matching circuit 10 described above in this application can provide different reactance ranges by controlling and adjusting the voltage value of AC power AC1 output by the first AC source P1 within the first voltage range d1 and the voltage value of AC power AC1 output by the second AC source P2 within the second voltage range d2, so as to achieve a better impedance matching effect. Furthermore, by configuring any voltage value in the first voltage range d1 to be less than or equal to the minimum voltage value in the second voltage range d2, it can achieve a combination of rapid coarse and fine adjustment, and achieve impedance matching more quickly.
[0048] Furthermore, the impedance change of the first curve S1 within the first voltage range d1 is less than the impedance change of the second curve S2 within the first voltage range d1, and the impedance change of the first curve S1 within the second voltage range d2 is greater than the impedance change of the second curve S2 within the second voltage range d2.
[0049] Specifically, the minimum voltage value in the first voltage range d1 is greater than the first preset voltage value, and the maximum voltage value in the second voltage range d2 is less than the second preset voltage value. This prevents damage to the semiconductor device and avoids extreme capacitive reactance values.
[0050] In some other embodiments, the manufacturing parameters of the first pair of semiconductor devices and the second pair of semiconductor devices are at least partially the same, and the conduction directions of one of the first semiconductor devices and the other semiconductor device are opposite, such that the first curve S1 and the second curve S2 are symmetrical about Xc = j, where j is the intersection point of the first curve S1 and the second curve S2. This allows for a more accurate provision of the target capacitive reactance value.
[0051] Furthermore, the control unit 300 can be used to control and adjust the voltage value of the AC power AC1 output by the first AC source P1 and the second AC source P2 within a third voltage range. The minimum voltage value of the third voltage range is the minimum voltage value of the first voltage range d1, and the maximum voltage value of the third voltage range is the maximum voltage value of the second voltage range d2. That is, the minimum voltage value of the third voltage range is greater than the first preset voltage value, and the maximum voltage value of the third voltage range is less than the second preset voltage value.
[0052] In some embodiments, the control unit 300 may be a general-purpose processor such as a central processing unit (CPU), or a digital signal processor (DSP), application-specific integrated circuit (ASIC), field-programmable gate array (FPGA), or other programmable logic devices, discrete gate logic devices, transistor logic devices, or other logic control devices. It may also be a microprocessor such as a micro control unit (MCU).
[0053] Please refer to the following: Figure 6 , Figure 7 , Figure 6 This is a schematic diagram of a variable capacitive reactance unit in some embodiments of this application. Figure 7 This is yet another schematic diagram of the variable capacitive reactance unit in some embodiments of this application. For example... Figure 1 , Figure 6 As shown, the two first semiconductor devices include a first diode D1 and a second diode D2. Both first diode D1 and second diode D2 include a first terminal and a second terminal. The first terminal of the first diode D1 is connected to the transmission path 20 and the other end of the power supply unit 200. The second terminal of the first diode D1 is connected to the second terminal of the second diode D2 and one end of the power supply unit 200. The second terminal of the second diode D2 is connected to one end of the power supply unit 200, and the first terminal of the second diode D2 is connected to the other end of the power supply unit 200. Alternatively, as... Figure 1 , Figure 7As shown, the two first semiconductor devices include a first transistor M1 and a second transistor M2. Both the first transistor M1 and the second transistor M2 include a first electrode and a second electrode. The first electrode of the first transistor M1 is connected to the transmission path 20 and the other end of the power supply unit 200. The second electrode of the first transistor M1 is connected to the second electrode of the second transistor M2 and one end of the power supply unit 200. The second electrode of the second transistor M2 is connected to one end of the power supply unit 200, and the first electrode of the second transistor M2 is connected to the other end of the power supply unit 200.
[0054] Therefore, the impedance matching circuit 10 described above in this application can achieve an adjustable impedance value through diodes or transistors, thereby quickly achieving impedance matching.
[0055] In a diode, the first electrode can be either the positive or negative electrode, and the second electrode can be either the negative or positive electrode. In a transistor, the first electrode can be either the source or the drain, and the second electrode can be either the drain or the source.
[0056] In some embodiments, the first transistor M1 and the second transistor M2 can both be a metal MOSFET, an insulated-gate bipolar transistor (IGBT), or other transistors.
[0057] Specifically, the two second semiconductor devices may include a third diode D3 and a fourth diode D4. Both third diode D3 and fourth diode D4 include a first terminal and a second terminal. The first terminal of third diode D3 is connected to the transmission path 20 and the other end of the power supply unit 200. The second terminal of third diode D3 is connected to the second terminal of fourth diode D4 and one end of the power supply unit 200. The second terminal of fourth diode D4 is connected to one end of the power supply unit 200, and the first terminal of fourth diode D4 is connected to the other end of the power supply unit 200. Alternatively, the two second semiconductor devices may include a third transistor and a fourth transistor. Both third and fourth transistors include a first terminal and a second terminal. The first terminal of third transistor is connected to the transmission path 20 and the other end of the power supply unit 200. The second terminal of third transistor is connected to the second terminal of fourth transistor and one end of the power supply unit 200. The second terminal of fourth transistor is connected to one end of the power supply unit 200, and the first terminal of fourth transistor is connected to the other end of the power supply unit 200.
[0058] One end of the power supply unit 200 can be the positive terminal of the power supply unit 200, and the other end of the power supply unit 200 can be the negative terminal of the power supply unit 200.
[0059] Please see Figure 8 , Figure 8 The diagram shows that the impedance matching circuit in some embodiments of this application also includes an isolation unit. For example... Figure 8 As shown, the impedance matching circuit 10 also includes an isolation unit 500, which is connected to the power supply unit 200 and the two first semiconductor devices. The isolation unit 500 is used to isolate the power supply unit 200 from the variable capacitive reactance unit 100.
[0060] Therefore, the impedance matching circuit 10 described above in this application, by providing additional AC power AC1 in the transmission path 20 of the radio frequency power RFP, can prevent the AC power AC1 output by the power supply unit 200 from affecting the transmission of the radio frequency power RFP by setting the isolation unit 500.
[0061] like Figure 8 As shown, the isolation unit 500 includes a first inductor L1, a second inductor L2, and a third inductor L3. One end of the first inductor L1 is connected to one end of the power supply unit 200, and the other end of the first inductor L1 is connected to the connection point between two first semiconductor devices. One end of the second inductor L2 is connected to the other end of the power supply unit 200, and the other end of the second inductor L2 is connected to the connection point between one of the first semiconductor devices and the transmission path 20. One end of the third inductor L3 is connected to the other end of the power supply unit 200, and the other end of the third inductor L3 is connected to the end of another first semiconductor device that is not connected to one of the first semiconductor devices. The inductance values of the first inductor L1, the second inductor L2, and the third inductor L3 are all greater than an inductance threshold.
[0062] Therefore, the impedance matching circuit 10 described above in this application, by configuring the inductance values of the first inductor L1, the second inductor L2, and the third inductor L3 to be greater than the inductance threshold, enables the first inductor L1, the second inductor L2, and the third inductor L3 to act as chokes to isolate the power supply unit 200 from the variable capacitive reactance unit 100.
[0063] Please refer to it again. Figure 5 .like Figure 5 As shown, the power supply unit 200 includes a first AC source P1. One end of the first AC source P1 is connected to the connection point between two first semiconductor devices, and the other end of the first AC source P1 is connected to the connection point between one of the first semiconductor devices and the transmission path 20. The other end of the first AC source P1 is also connected to the end of another first semiconductor device that is not connected to one of the first semiconductor devices. The first AC source P1 is used to output AC power AC1.
[0064] Therefore, the impedance matching circuit 10 described above in this application, when the variable capacitive reactance unit 100 includes only the first pair of semiconductor devices, can adjust the capacitive reactance value of the first pair of semiconductor devices by configuring the connection relationship between the first AC source P1 and the first pair of semiconductor devices.
[0065] The impedance matching circuit 10 of this application, through the above structure, can quickly adjust the capacitive reactance value of the variable capacitive reactance unit 100 to improve the impedance matching speed and achieve impedance matching faster. It does not require the use of electronic components such as capacitors, and also provides multiple adjustment methods, which can provide more accurate capacitive reactance values and achieve better impedance matching effect.
[0066] Please see Figure 9 , Figure 9 This is a schematic diagram of a radio frequency power supply system in some embodiments of this application. For example... Figure 9 As shown, this application also provides an RF power supply system 1000, which includes an RF power supply device 30, a transmission path 20, and an impedance matching circuit 10 in any of the foregoing embodiments.
[0067] Please refer to it again. Figure 1 .like Figure 1 As shown, the impedance matching circuit 10 includes a variable capacitive reactance unit 100, a power supply unit 200, and a control unit 300. The variable capacitive reactance unit 100 includes a first pair of semiconductor devices, comprising two first semiconductor devices connected in series. One of the first semiconductor devices is used to connect to the transmission path 20 of the radio frequency power RFP. Both first semiconductor devices have unidirectional conduction characteristics, and both first semiconductor devices have an overall capacitive reactance value, with opposite unidirectional conduction directions. The power supply unit 200 is connected to the two first semiconductor devices and is used to output AC power AC1. The control unit 300 is connected to the power supply unit 200 and is used to control and adjust the voltage value of the AC power AC1 output by the power supply unit 200. The overall capacitive reactance value of the two first semiconductor devices changes with the voltage value of the AC power AC1.
[0068] For a more specific description of the impedance matching circuit 10, please refer to the relevant content of the impedance matching circuit 10 in any of the foregoing embodiments, which will not be repeated here.
[0069] In some embodiments, the radio frequency power supply device 30 is used to output, such as Figure 1 The radio frequency power RFP shown is transmitted to the load 40 through the transmission path 20 to provide radio frequency power RFP to the load 40.
[0070] The impedance matching circuit 10 and the RF power supply system 1000 of this application, through the above structure, can quickly adjust the capacitive reactance value of the variable capacitive reactance unit 100 to improve the impedance matching speed and achieve impedance matching faster. Furthermore, they do not require the use of electronic components such as capacitors, and provide multiple adjustment methods to provide more accurate capacitive reactance values, thereby achieving better impedance matching results.
[0071] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Where there is no conflict, the embodiments and features in the embodiments of this application can be combined with each other. Therefore, the scope of protection of this application should be determined by the scope of the claims.
Claims
1. An impedance matching circuit, characterized in that, include: A variable capacitive reactance unit includes a first pair of semiconductor devices, the first pair of semiconductor devices including two first semiconductor devices connected in series, and one of the first semiconductor devices is used to connect to the transmission path of radio frequency power. The two first semiconductor devices have unidirectional conduction characteristics, the two first semiconductor devices have a capacitive reactance value as a whole, and the unidirectional conduction directions of the two first semiconductor devices are opposite. A power supply unit is connected to the two first semiconductor devices, and the power supply unit is used to output AC power. A control unit is connected to the power supply unit, and the control unit is used to control and adjust the voltage value of the AC power output by the power supply unit; The capacitive reactance of the two first semiconductor devices as a whole changes with the voltage of the AC power.
2. The impedance matching circuit according to claim 1, characterized in that, The impedance matching circuit further includes an impedance acquisition unit, which is connected to the transmission path to obtain the impedance value of the transmission path. The impedance acquisition unit is also connected to the control unit. The control unit is used to receive the impedance value of the transmission path, and control and adjust the voltage value of the AC power to the target voltage value according to the variable capacitive reactance curve and the impedance value of the transmission path, so that the overall capacitive reactance value of the two first semiconductor devices is the target capacitive reactance value. The variable capacitive reactance curve is obtained at least from the first curve, which represents the correspondence between the voltage value of the AC power and the overall capacitive reactance value of the two first semiconductor devices.
3. The impedance matching circuit according to claim 2, characterized in that, The variable capacitive reactance unit further includes a second pair of semiconductor devices, which includes two second semiconductor devices connected in series, and one of the second semiconductor devices is connected to the transmission path. Both of the second semiconductor devices have unidirectional conduction characteristics, the two second semiconductor devices as a whole have a capacitive reactance value, and the unidirectional conduction directions of the two second semiconductor devices are opposite. The power supply unit is connected to the two second semiconductor devices, and the control unit is used to control and adjust the voltage value of the AC power to the target voltage value, so that the capacitive reactance value of the two first semiconductor devices and the two second semiconductor devices as a whole is the target capacitive reactance value. The variable capacitive reactance curve is obtained from the first curve and the second curve. The second curve is used to represent the correspondence between the voltage value of the AC power and the overall capacitive reactance value of the two second semiconductor devices.
4. The impedance matching circuit according to claim 3, characterized in that, The power supply unit includes a first AC source and a second AC source. The first AC source is connected to the two first semiconductor devices, and the second AC source is connected to the two second semiconductor devices. Both the first AC source and the second AC source are used to output AC power. The control unit is configured to adjust the voltage of the AC power output from the first AC source to a corresponding target voltage value based on the first curve and the impedance value of the transmission path, and to adjust the voltage of the AC power output from the second AC source to a corresponding target voltage value based on the second curve and the impedance value of the transmission path.
5. The impedance matching circuit according to claim 4, characterized in that, The control unit is used to control and adjust the voltage value of the AC power output by the first AC source within a first voltage value range, and to control and adjust the voltage value of the AC power output by the second AC source within a second voltage value range. Wherein, any voltage value in the first voltage range is less than or equal to the minimum voltage value in the second voltage range.
6. The impedance matching circuit according to claim 1, characterized in that, The two first semiconductor devices include a first diode and a second diode. Both the first diode and the second diode include a first electrode and a second electrode. The first electrode of the first diode is connected to the transmission path and the other end of the power supply unit. The second electrode of the first diode is connected to the second electrode of the second diode and one end of the power supply unit. The second electrode of the second diode is connected to one end of the power supply unit. The first electrode of the second diode is connected to the other end of the power supply unit. Alternatively, the two first semiconductor devices include a first transistor and a second transistor, each of which includes a first electrode and a second electrode. The first electrode of the first transistor is connected to the transmission path and the other end of the power supply unit. The second electrode of the first transistor is connected to the second electrode of the second transistor and one end of the power supply unit. The second electrode of the second transistor is connected to one end of the power supply unit, and the first electrode of the second transistor is connected to the other end of the power supply unit.
7. The impedance matching circuit according to claim 1, characterized in that, The impedance matching circuit further includes an isolation unit, which is connected to both the power supply unit and the two first semiconductor devices. The isolation unit is used to isolate the power supply unit from the variable capacitive reactance unit.
8. The impedance matching circuit according to claim 7, characterized in that, The isolation unit includes a first inductor, a second inductor, and a third inductor; One end of the first inductor is connected to one end of the power supply unit, and the other end of the first inductor is connected to the connection point between the two first semiconductor devices; One end of the second inductor is connected to the other end of the power supply unit, and the other end of the second inductor is connected to the connection point between one of the first semiconductor devices and the transmission path; One end of the third inductor is connected to the other end of the power supply unit, and the other end of the third inductor is connected to the end of another first semiconductor device that is not connected to one of the first semiconductor devices. The inductance values of the first inductor, the second inductor, and the third inductor are all greater than the inductance threshold.
9. The impedance matching circuit according to claim 1, characterized in that, The power supply unit includes a first AC source, one end of which is connected to the connection point between the two first semiconductor devices, the other end of which is connected to the connection point between one of the first semiconductor devices and the transmission path, and the other end of which is connected to the end of another first semiconductor device that is not connected to the one of the first semiconductor devices. The first AC source is used to output the AC power.
10. A radio frequency power supply system, characterized in that, It includes radio frequency power supply equipment, transmission path, and impedance matching circuit as described in any one of claims 1-9.