Preparation method of silicon-based white light OLED (Organic Light Emitting Diode) colorized emergent light collimation structure

Abstract

The invention relates to OLED manufacturing, in particular to a preparation method of a silicon-based white light OLED colorized light emitting collimation structure, which comprises the following steps: manufacturing an anode structure on a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) driving back plate, and sequentially preparing an organic light emitting layer and a thin film packaging layer on the anode structure to obtain a first substrate; preparing an OC flat layer on the first substrate to obtain a second substrate; manufacturing a micro-lens array on the second substrate to obtain a third substrate; changing the shape of the micro-lens array on the third substrate to obtain a fourth substrate; sequentially preparing a B color filter film, a G color filter film and an R color filter film on the micro-lens array of the fourth substrate to finally obtain a seventh substrate; according to the technical scheme, the defects that in the prior art, the emergent light collimation degree is poor, color mixing is caused by light crosstalk easily formed between adjacent different-color pixels, and the packaging reliability is poor can be effectively overcome.

Description

Technical Field

[0001] This invention relates to OLED manufacturing, and more specifically to a method for preparing a color collimation structure for a silicon-based white OLED. Background Technology

[0002] The current technology for colorizing white OLEDoS displays RGB pixels by fabricating an RGB color filter on top of the white OLED device. To improve light collimation and intensity, a microlens array (MLA) is typically fabricated on the color filter, such as... Figure 8 As shown, this structure mainly has the following defects:

[0003] 1) In the white OLED device, some light rays with large angles pass through the edges of the color filter and microlens and enter the adjacent heterochromatic pixel area, forming light crosstalk and causing color mixing, that is, the pixel emission color is not pure.

[0004] 2) To avoid the above situation, a black matrix (BM) film layer is usually added between the RGB color filters to block and absorb light that may pass through the edges of the color filters and microlenses and enter the adjacent heterochromatic pixel area. However, this approach increases the process flow and difficulty (the BM film layer is very easy to peel off during the process if there is no special structural design or material selection due to its small contact area), and sacrifices the aperture ratio of the RGB color filters.

[0005] 3) As the thickness of the thin film encapsulation under the RGB color filter increases, the optical path of the light-emitting layer becomes longer, and the probability of light rays with the same divergence angle entering the adjacent heterochromatic pixel region increases. In order to avoid the deterioration of this phenomenon, the current method is to control the thickness of the thin film encapsulation, which also limits the encapsulation reliability of the thin film encapsulation layer for organic light-emitting devices. Summary of the Invention

[0006] (a) Technical problems to be solved

[0007] In view of the above-mentioned shortcomings of the prior art, the present invention provides a method for preparing a silicon-based white OLED colorization collimation structure, which can effectively overcome the defects of the prior art, such as poor light output collimation, easy light crosstalk between adjacent heterochromatic pixels leading to color mixing, and poor packaging reliability.

[0008] (II) Technical Solution

[0009] To achieve the above objectives, the present invention provides the following technical solution:

[0010] A method for fabricating a color-emitting collimation structure for a silicon-based white OLED includes the following steps:

[0011] S1. An anode structure is fabricated on a CMOS driver backplane, and an organic light-emitting layer and a thin film encapsulation layer are sequentially fabricated on the anode structure to obtain the first substrate;

[0012] S2. An OC planarization layer is prepared on the first substrate to obtain the second substrate;

[0013] S3. Fabricate a microlens array on the second substrate to obtain the third substrate;

[0014] S4. The shape of the microlens array on the third substrate is changed to obtain the fourth substrate;

[0015] S5. A B filter film, a G filter film, and an R filter film are sequentially prepared on the microlens array of the fourth substrate to finally obtain the seventh substrate.

[0016] Preferably, in S1, an anode structure is fabricated on the CMOS driving backplane, including:

[0017] S11. An anode structure for driving RGB pixels is fabricated on a silicon substrate with a CMOS underlying driving circuit using a photolithography patterning process for anode metal.

[0018] Preferably, in S1, an organic light-emitting layer and a thin-film encapsulation layer are sequentially fabricated on the anode structure to obtain a first substrate, comprising:

[0019] S12. Using a vacuum thermal evaporation deposition equipment, deposit the organic light-emitting layer of a white OLED in the pixel region of the anode structure;

[0020] S13. A first inorganic transparent film layer is deposited on the surface of the organic light-emitting layer using a TFE-CVD device, and a second inorganic transparent film layer is deposited on the surface of the first inorganic transparent film layer using an ALD device. The first inorganic transparent film layer and the second inorganic transparent film layer constitute a thin film encapsulation layer covering the organic light-emitting layer to encapsulate and protect the organic light-emitting device, thereby obtaining the first substrate.

[0021] The first inorganic transparent film layer is a silicon nitride film layer, and the second inorganic transparent film layer is an aluminum oxide film layer.

[0022] Preferably, in step S2, an OC planarization layer is prepared on the first substrate to obtain a second substrate, comprising:

[0023] An OC planarization layer was prepared on the surface of the thin film encapsulation layer using a spin coater to obtain a second substrate.

[0024] Preferably, in step S3, a microlens array is fabricated on the second substrate to obtain a third substrate, comprising:

[0025] A high-refractive-index inorganic or organic transparent film layer is prepared on the surface of the OC planarization layer, and a columnar microlens array is fabricated using photolithography to obtain the third substrate.

[0026] The inorganic transparent film layer is either a silicon nitride film layer or a silicon oxide film layer.

[0027] Preferably, in step S4, the shape of the microlens array on the third substrate is changed to obtain a fourth substrate, comprising:

[0028] By employing a dry etching process or a combination of organic film thermal reflow and dry etching, the cylindrical microlens array is transformed into a plano-convex microlens array, thus completing the fabrication of the microlens array and obtaining the fourth substrate.

[0029] Preferably, in step S5, a B color filter film, a G color filter film, and an R color filter film are sequentially fabricated on the microlens array of the fourth substrate to finally obtain the seventh substrate, comprising:

[0030] S51. The fourth substrate is sent to the spin coating and developing equipment for spin coating. After spin coating of the B filter film is completed, it is sent to the exposure machine for exposure. After exposure, it is sent to the spin coating and developing equipment for development to complete the preparation of the B filter film and obtain the fifth substrate.

[0031] S52. The fifth substrate is sent to the spin coating and developing equipment for spin coating. After spin coating of the G filter film is completed, it is sent to the exposure machine for exposure. After exposure, it is sent to the spin coating and developing equipment for development to complete the preparation of the G filter film and obtain the sixth substrate.

[0032] S53. The sixth substrate is sent to the spin coating and developing equipment for spin coating. After spin coating of the R filter film is completed, it is sent to the exposure machine for exposure. After exposure, it is sent to the spin coating and developing equipment for development to complete the preparation of the R filter film and obtain the seventh substrate.

[0033] (III) Beneficial Effects

[0034] Compared with existing technologies, the present invention provides a method for fabricating a silicon-based white OLED colorization collimation structure. By optimizing the relative position and structure between the RGB color filter and the microlens array, the RGB color filter is fabricated above the microlens array, covering the microlens array. This achieves collimation and enhancement of the emitted light beam from the white OLED before color filtering, effectively ensuring the light output collimation. At the same time, it avoids color mixing caused by light crosstalk between adjacent different color pixels. It eliminates the need for a separate BM film layer, saving on BM film fabrication processes. The overall process is relatively simple. Compared with existing white colorization structures, it does not increase the number of process steps, and the thickness of the thin film encapsulation under the RGB color filter can be increased, thereby enhancing the encapsulation reliability of the organic light-emitting device. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the accompanying drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are merely some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0036] Figure 1 This is a schematic diagram of the structure of the first substrate in this invention;

[0037] Figure 2 This is a schematic diagram of the structure of the second substrate in this invention;

[0038] Figure 3 This is a schematic diagram of the structure of the third substrate in this invention;

[0039] Figure 4 This is a schematic diagram of the structure of the fourth substrate in this invention;

[0040] Figure 5 This is a schematic diagram of the structure of the fifth substrate in this invention;

[0041] Figure 6 This is a schematic diagram of the structure of the sixth substrate in this invention;

[0042] Figure 7 This is a schematic diagram of the structure of the seventh substrate in this invention;

[0043] Figure 8 This is a schematic diagram of the existing white light colorization structure. Detailed Implementation

[0044] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0045] The following describes the specific process and technical effects of the method for preparing the color collimation structure of silicon-based white OLED provided by the present invention, with specific examples.

[0046] 1. An anode structure is fabricated on the CMOS driver backplane, and an organic light-emitting layer and a thin-film encapsulation layer are sequentially fabricated on the anode structure to obtain the first substrate (e.g., Figure 1 (As shown).

[0047] 1) Fabricating the anode structure on the CMOS driver backplane, including:

[0048] An anode structure for driving RGB pixels is fabricated on a silicon substrate with CMOS underlying driving circuitry using a photolithography patterning process for anode metal.

[0049] 2) An organic light-emitting layer and a thin-film encapsulation layer are sequentially fabricated on the anode structure to obtain a first substrate, comprising:

[0050] Using vacuum thermal evaporation deposition equipment, an organic light-emitting layer for white OLEDs is deposited in the pixel region of the anode structure;

[0051] A first inorganic transparent film layer is deposited on the surface of the organic light-emitting layer using a TFE-CVD device, and a second inorganic transparent film layer is deposited on the surface of the first inorganic transparent film layer using an ALD device. The first inorganic transparent film layer and the second inorganic transparent film layer constitute a thin film encapsulation layer that covers the organic light-emitting layer to encapsulate and protect the organic light-emitting device, thus obtaining the first substrate.

[0052] The first inorganic transparent film layer is a silicon nitride film layer, and the second inorganic transparent film layer is an aluminum oxide film layer.

[0053] 2. An OC planarization layer is fabricated on the first substrate to obtain the second substrate (e.g., Figure 2 (As shown).

[0054] An OC planarization layer was prepared on the surface of the thin film encapsulation layer using a spin coater to obtain a second substrate.

[0055] Third, fabricate a microlens array on the second substrate to obtain the third substrate (e.g., Figure 3 (As shown).

[0056] A high-refractive-index inorganic or organic transparent film layer is prepared on the surface of the OC planarization layer, and a columnar microlens array is fabricated using photolithography to obtain the third substrate.

[0057] The inorganic transparent film layer is either a silicon nitride film layer or a silicon oxide film layer.

[0058] IV. The shape of the microlens array on the third substrate is modified to obtain the fourth substrate (e.g., Figure 4 (As shown).

[0059] By employing a dry etching process or a combination of organic film thermal reflow and dry etching, the cylindrical microlens array is transformed into a plano-convex microlens array, thus completing the fabrication of the microlens array and obtaining the fourth substrate.

[0060] Fifth, B filter film, G filter film and R filter film are sequentially prepared on the microlens array of the fourth substrate to finally obtain the seventh substrate.

[0061] 1) The fourth substrate is fed into a spin coater and developing machine for spin coating. After spin coating of the B filter film is completed, it is fed into an exposure machine for exposure. After exposure, it is fed into a spin coater and developing machine for development to complete the preparation of the B filter film, resulting in the fifth substrate (e.g., Figure 5 (as shown)

[0062] 2) The fifth substrate is fed into a spin coater and developing machine for spin coating. After spin coating of the G filter film is completed, it is fed into an exposure machine for exposure. After exposure, it is fed into a spin coater and developing machine for development to complete the preparation of the G filter film, resulting in the sixth substrate (e.g., Figure 6 (as shown)

[0063] 3) The sixth substrate is fed into a spin coater and developing machine for spin coating. After spin coating of the R filter film is completed, it is fed into an exposure machine for exposure. After exposure, it is fed into a spin coater and developing machine for development to complete the preparation of the R filter film, resulting in the seventh substrate (e.g., Figure 7 (As shown).

[0064] In this application's technical solution, by optimizing the relative position and structure between the RGB color filter film and the microlens array, the RGB color filter film is fabricated above the microlens array, covering the microlens array. This enables the white OLED emitted beam to be collimated and enhanced before color filtering, effectively ensuring the collimation of the emitted light. At the same time, it can avoid color mixing caused by light crosstalk between adjacent heterochromatic pixels. There is no need to add a separate BM film layer, saving on BM film fabrication process. The overall process flow is relatively simple. Compared with the existing white light colorization structure, there is no increase in process steps. Furthermore, the thickness of the thin film encapsulation under the RGB color filter film can be increased, thereby enhancing the encapsulation reliability of the organic light-emitting device.

[0065] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions will not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for fabricating a silicon-based white OLED colorization collimation structure, characterized in that: Includes the following steps: S1. An anode structure is fabricated on a CMOS driver backplane, and an organic light-emitting layer and a thin film encapsulation layer are sequentially fabricated on the anode structure to obtain the first substrate; S2. An OC planarization layer is prepared on the first substrate to obtain the second substrate; S3. Fabricate a microlens array on the second substrate to obtain the third substrate; S4. The shape of the microlens array on the third substrate is changed to obtain the fourth substrate; S5. A B filter film, a G filter film, and an R filter film are sequentially prepared on the microlens array of the fourth substrate to finally obtain the seventh substrate.

2. The method for fabricating a silicon-based white OLED colorization collimation structure according to claim 1, characterized in that: In S1, an anode structure is fabricated on the CMOS driver backplane, including: S11. An anode structure for driving RGB pixels is fabricated on a silicon substrate with a CMOS underlying driving circuit using a photolithography patterning process for anode metal.

3. The method for fabricating a silicon-based white OLED colorization collimation structure according to claim 2, characterized in that: In S1, an organic light-emitting layer and a thin-film encapsulation layer are sequentially fabricated on the anode structure to obtain a first substrate, including: S12. Using a vacuum thermal evaporation deposition equipment, deposit the organic light-emitting layer of a white OLED in the pixel region of the anode structure; S13. A first inorganic transparent film layer is deposited on the surface of the organic light-emitting layer using a TFE-CVD device, and a second inorganic transparent film layer is deposited on the surface of the first inorganic transparent film layer using an ALD device. The first inorganic transparent film layer and the second inorganic transparent film layer constitute a thin film encapsulation layer covering the organic light-emitting layer to encapsulate and protect the organic light-emitting device, thereby obtaining the first substrate. The first inorganic transparent film layer is a silicon nitride film layer, and the second inorganic transparent film layer is an aluminum oxide film layer.

4. The method for fabricating a silicon-based white OLED colorization collimation structure according to claim 1, characterized in that: In S2, an OC planarization layer is prepared on the first substrate to obtain a second substrate, including: An OC planarization layer was prepared on the surface of the thin film encapsulation layer using a spin coater to obtain a second substrate.

5. The method for fabricating a silicon-based white OLED colorization collimation structure according to claim 1, characterized in that: In S3, a microlens array is fabricated on the second substrate to obtain a third substrate, including: A high-refractive-index inorganic or organic transparent film layer is prepared on the surface of the OC planarization layer, and a columnar microlens array is fabricated using photolithography to obtain the third substrate. The inorganic transparent film layer is either a silicon nitride film layer or a silicon oxide film layer.

6. The method for fabricating a silicon-based white OLED colorization collimation structure according to claim 1, characterized in that: In S4, the shape of the microlens array on the third substrate is changed to obtain the fourth substrate, which includes: By employing a dry etching process or a combination of organic film thermal reflow and dry etching, the cylindrical microlens array is transformed into a plano-convex microlens array, thus completing the fabrication of the microlens array and obtaining the fourth substrate.

7. The method for fabricating a silicon-based white OLED colorization collimation structure according to claim 1, characterized in that: In S5, a B color filter film, a G color filter film, and an R color filter film are sequentially fabricated on the microlens array of the fourth substrate, ultimately resulting in the seventh substrate, which includes: S51. The fourth substrate is sent to the spin coating and developing equipment for spin coating. After spin coating of the B filter film is completed, it is sent to the exposure machine for exposure. After exposure, it is sent to the spin coating and developing equipment for development to complete the preparation of the B filter film and obtain the fifth substrate. S52. The fifth substrate is sent to the spin coating and developing equipment for spin coating. After spin coating of the G filter film is completed, it is sent to the exposure machine for exposure. After exposure, it is sent to the spin coating and developing equipment for development to complete the preparation of the G filter film and obtain the sixth substrate. S53. The sixth substrate is sent to the spin coating and developing equipment for spin coating. After spin coating of the R filter film is completed, it is sent to the exposure machine for exposure. After exposure, it is sent to the spin coating and developing equipment for development to complete the preparation of the R filter film and obtain the seventh substrate.

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