Wafer scribing equipment and deslagging use method

Abstract

The invention provides wafer scribing equipment and a deslagging use method, and belongs to the technical field of wafer scribing equipment. The device specifically comprises a hollow box which is fixedly arranged relative to the ground, and the end, away from the ground, of the box is open; the rotary table is used for bearing and fixing a wafer; the laser cutting head is arranged above the opening part of the box body and is used for outputting laser and scribing the end surface of the wafer; the first jet flow pipelines are arranged in the laser cutting head and used for conducting spraying heat dissipation on the peripheral area of the light spots projected on the end face of the wafer by the laser cutting head, and the distance between the spraying positions of the first jet flow pipelines and the laser light spots can be adjusted; and the plurality of second jet flow pipelines are arranged above the opening part of the box body and are used for carrying out secondary heat dissipation and deslagging flushing on the scribed wafer. The postures of the tail ends of the first jet flow pipelines can be adjusted, so that the distance between the spraying position of the heat dissipation medium and the laser spot is adjusted, and the device is suitable for different thicknesses or materials.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of wafer dicing equipment, and particularly relates to a wafer dicing equipment and slag removal method. BACKGROUND

[0002] Dicing is a process of integrated circuit packaging. The wafer dicing is a key process step of dividing the wafer printed with integrated circuits into independent chips, and the dicing quality directly affects the finished product quantity and chip performance. With the continuous improvement of the process technology, the width of the dicing groove on the wafer is getting smaller and smaller. The wafer is a semiconductor material, and edge chipping, debris pollution or thermal damage are easily generated in the dicing process.

[0003] The dicing machine mainly adopts three methods when dicing: diamond dicing is that the main shaft of the dicing machine carries a diamond blade to cut the wafer along the groove, but this dicing method has low precision and wide blade width, which reduces the effective utilization area of the wafer; the grinding wheel dicing is that the main shaft drives the grinding wheel to rotate at high speed, and the grinding wheel moves on the surface of the chip according to the preset parameters, and cuts the wafer into independent units, which requires extremely high setting of process parameters and is very sensitive to vibration; the laser dicing is that a laser head is used to irradiate the surface of the wafer to heat it to a certain temperature, so that the wafer is split, which has the advantage of flat cross section, but the thermal effect will cause thermal damage to the internal structure of the wafer. Although the use of ultra-short pulse laser can reduce the thermal effect, the processing efficiency will also decrease.

[0004] Therefore, it is necessary to provide a wafer dicing equipment and slag removal method, which provides a laser beam for the wafer cutting part by reasonable design, and performs auxiliary heat dissipation and cleaning on the light spot area of the cutting part, reduces the heat loss caused by the thermal effect of the laser, and removes the debris generated during laser dicing, so as to improve the wafer processing efficiency and processing quality. SUMMARY

[0005] Therefore, the present application provides a wafer dicing equipment and slag removal method which can reliably perform heat dissipation and slag removal on the processing part of the wafer, and adjust the heat dissipation spraying position and the light spot spacing according to the wafer specifications.

[0006] The present application provides a wafer dicing equipment, which comprises: A hollow box body is fixedly arranged relative to the ground, and an opening is arranged at one end of the box body away from the ground; A rotary table is arranged for carrying the wafer; A laser cutting head is arranged above the opening part of the box body, and is used for outputting laser and performing dicing processing on the end face of the wafer; A plurality of first jet pipes are arranged inside the laser cutting head and used for spraying and cooling the periphery of the laser spot on the wafer end face; the spraying of the plurality of first jet pipes is adjustable relative to the interval of the laser spot; A plurality of second jet pipes are arranged above the opening part of the box body and are arranged obliquely relative to the rotary table, and are used for secondary cooling and slag removal flushing of the wafer after the scribing process.

[0007] On the basis of the above technical scheme, preferably, the rotary table is provided with a first base at the end away from the ground, a plurality of vacuum chucks are arranged in an array on the first base, one end of the vacuum chuck is fixedly connected with the first base, and the other end of the vacuum chuck abuts against the end of the wafer close to the ground; the plurality of vacuum chucks are connected with the negative pressure generating mechanism pipeline outside the box body; and gaps are arranged between adjacent vacuum chucks.

[0008] Preferably, the rotary table is provided with a rotating shaft inside, the rotary table is fixedly connected with the end of the rotating shaft away from the ground, and the rotating shaft is provided with a rotary drive device at the end close to the ground, and the output end of the rotary drive device is in transmission connection with the rotating shaft.

[0009] Preferably, the laser cutting head comprises a shell, a second base, a laser output assembly and a copper nozzle; the copper nozzle is arranged at the end of the shell close to the ground; and the copper nozzle is hingedly connected with the shell, the copper nozzle is provided with a first through hole and a plurality of second through holes, the first through hole is arranged at the center position of the copper nozzle, and the plurality of second through holes are arranged around the first through hole; the shell is provided with the laser output assembly inside, the laser output assembly is arranged in extension along the vertical direction, one end of the laser output assembly is in communication with the first through hole, and the other end of the laser output assembly is fixedly connected with the shell, and the laser output assembly is used for projecting laser to the surface of the wafer; the second base is arranged at the side of the shell away from the ground and is rotationally connected with the end of the laser output assembly away from the ground; a plurality of first jet pipes are arranged inside the shell, one end of the plurality of first jet pipes is fixedly connected with the second base, the other end of the plurality of first jet pipes extends towards the ground and is correspondingly inserted into the second through hole; the side of the copper nozzle close to the shell is fixedly provided with a synchronous swing mechanism, and the synchronous swing mechanism is used for synchronously adjusting the distance between the other end of the plurality of first jet pipes close to the ground and the center of the first through hole.

[0010] Further preferably, the cross-sectional shape of the plurality of second through holes is a rounded sector shape; and the center of the rounded sector shape is offset from the center of the first through hole; the synchronous swing mechanism includes a plurality of fixed arms and a plurality of pull rods, the plurality of fixed arms are fixedly connected to the end face of the copper nozzle, and the other end extends outward in a direction away from the first through hole, the ends of the plurality of fixed arms away from the first through hole are provided with through elongated holes, one end of the plurality of pull rods is embedded in the elongated holes and slidably connected to the fixed arms, and the other end of the plurality of pull rods is embedded in the second through hole and is arranged around the outer surface of the first jet pipe near the ground; rotating the copper nozzle causes the plurality of fixed arms to rotate synchronously, further driving the plurality of pull rods to move along the second through hole, thereby adjusting the position of the plurality of first jet pipes in the second through hole.

[0011] More preferably, a plurality of first jet pipes are arranged in a zigzag pattern, with adjacent zigzag segments connected by elbows for sealing; a plurality of second jet pipes are arranged on the side of the housing; both the plurality of first jet pipes and the plurality of second jet pipes are connected to a water source, and the plurality of first jet pipes are made of a flexible material.

[0012] On the other hand, the present invention provides a method for removing slag from a wafer dicing equipment, comprising the following steps: S1: Configure the wafer dicing equipment described above; several first jet pipes and several second jet pipes are all connected to a water source; the laser cutting head is moved to the initial dicing position; S2: Based on the laser output power, laser processing speed, water pressure of several first jet pipes, water flow velocity at the end of several first jet pipes, water jet position of several first jet pipes, distance between laser spot and laser focus, and defocusing amount of laser focus, construct a material removal rate model for wafers. S3: Adjust the input parameters of the wafer material removal rate model according to the wafer specifications and the set wafer material removal rate; S4: Perform trial processing of the first piece. The laser cutting head outputs power and processing speed according to the set parameters. The spray positions of several first jet channels are set around the laser spot projected on the wafer surface. After dicing is completed, several second jet channels are opened. The carrier stage drives the wafer to rotate and rinses different positions on the wafer surface again. After the wafer dicing result of the trial processing is qualified, the batch wafer processing process is carried out using the current input parameters.

[0013] Preferably, in step S2, the material removal rate model for the wafer is constructed by setting the laser output power to be [value missing]. Laser processing speed is The outlet pressure of each first jet pipe is The outflow rate of each first jet pipe is The water flow velocity at the end of each first jet pipe is The distance between the water jet position in the first jet pipe and the laser spot is The defocusing amount of the laser focus is The focal length of the laser is The material removal rate model for the constructed wafer is then: ,in These are empirical parameters.

[0014] Further optimized, the outlet pressure of each first jet pipe Satisfy the following relationship ,in The initial inlet pressure of the first jet pipe is [value missing]. This refers to the pressure loss within the first jet pipe. , As the friction factor, The total length of the broken-line section of the first jet conduit. The density of the water flow in the first jet pipe, The inner diameter of the first jet pipe. This represents the number of bends in the first jet pipe. This is the local loss coefficient. The theoretical water velocity at the end of the first jet channel closest to the wafer is [value missing]. .

[0015] Furthermore, the water flow velocity at the end of each first jet pipe is preferred. Calculate according to the following formula: , The initial velocity of the water entering the first jet pipe, The height of the water inlet end of the first jet pipe (4) relative to the wafer end face. The height of the water outlet end of the first jet channel relative to the wafer end face. This is the acceleration due to gravity.

[0016] The wafer dicing equipment and slag removal method provided by this invention have the following advantages compared with the prior art: (1) The present invention configures a first jet pipe surrounding the laser beam to locally dissipate heat and rinse the wafer surface in the laser projection area. Then, after the overall dicing is completed, the second jet pipe is used again to clean the residual particles on the wafer surface, thereby continuously realizing the dicing and slag removal process, improving the quality of dicing and the efficiency of operation. (2) A material removal rate model for wafers was constructed, with laser output power, laser processing speed, water pressure of several first jet pipes, water flow velocity at the end of several first jet pipes, water jet position of several first jet pipes and distance between laser spot and laser focus as input parameters. The overall influence of spray pressure, flow rate and defocusing amount was fully considered to ensure processing efficiency while reducing the thermal effect during wafer dicing. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a half-sectional front view of the wafer dicing equipment and slag removal method of the present invention; Figure 2 This is a schematic diagram of the structure of the first base and vacuum chuck of the wafer dicing equipment and slag removal method of the present invention; Figure 3 for Figure 1 AA-direction cross-section.

[0019] Reference numerals: 1. Housing; 2. Rotary table; 3. Laser cutting head; 4. First jet pipe; 5. Second jet pipe; 21. First base; 22. Vacuum suction cup; 23. Rotary shaft; 24. Rotary drive device; 100. First through hole; 200. Second through hole; 31. Housing; 32. Second base; 33. Laser output assembly; 34. Copper nozzle; 35. Synchronous swing mechanism; 351. Fixed arm; 352. Pull rod. Detailed Implementation

[0020] The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0021] Existing laser scribing uses a laser head to irradiate the wafer surface, heating it to a certain temperature and causing the wafer to split. This method offers the advantage of a smooth cross-section. However, the thermal effect can cause thermal damage to the internal structure of the wafer. While using ultrashort pulse lasers can reduce the thermal effect, processing efficiency also decreases. Therefore, if... Figure 1As shown, the present invention provides a wafer dicing apparatus, specifically comprising: The hollow box 1 is fixed relative to the ground, and the end of the box 1 away from the ground is open; the opening makes it easy for the laser cutting head to extend into and approach the location of the wafer.

[0022] Rotary stage 2 is used to carry and hold the wafer in its current position.

[0023] The laser cutting head 3 is positioned above the opening of the housing 1 and is used to output laser light and perform dicing on the wafer end face.

[0024] Several first jet channels 4 are disposed inside the laser cutting head 3 to spray and dissipate heat around the area of ​​the laser spot projected by the laser cutting head 3 onto the wafer end face; the spacing between the spray of the several first jet channels 4 and the laser spot is adjustable; the several first jet channels 4 can spray the wafer area thoroughly during laser processing to prevent local overheating.

[0025] Several second jet pipes 5 are arranged above the opening of the housing 1 and inclined relative to the rotary table 2, for secondary heat dissipation and slag removal rinsing of the wafers after dicing. In this embodiment, the spraying medium of the first jet pipe 4 and the second jet pipe 5 is ultrapure water. Through two sprays, residual particles on the wafer surface can be effectively cleaned twice, ensuring processing efficiency while reducing the thermal effect during wafer dicing.

[0026] like Figure 1 Combination Figure 2 As shown, a first base 21 is provided at the end of the rotary table 2 away from the ground. A plurality of vacuum chucks 22 are arranged in an array on the first base 21. One end of the vacuum chuck 22 is fixedly connected to the first base 21, and the other end of the vacuum chuck 22 abuts against the end of the wafer near the ground. The plurality of vacuum chucks 22 are connected to the negative pressure generating mechanism pipe outside the housing 1. Adjacent vacuum chucks 22 are spaced apart. A rotating shaft 23 is provided inside the rotary table 2. The rotary table 2 is fixedly connected to the end of the rotating shaft 23 away from the ground. A rotary drive device 24 is provided at the end of the rotating shaft 23 near the ground. The output end of the rotary drive device 24 is connected to the rotating shaft 23 for transmission.

[0027] During the dicing process, the first base 21 remains in its current position, and the vacuum chuck 22 generates negative pressure to firmly hold different positions of the wafer. After dicing is completed, the rotary drive device 24 drives the rotating shaft and the first base 21 to rotate, at which time several second jet channels 5 perform a secondary rinsing of the wafer surface.

[0028] like Figure 1 Combination Figure 3As shown, the laser cutting head 3 includes a housing 31, a second base 32, a laser output assembly 33, and a copper nozzle 34. The copper nozzle 34 is located at the end of the housing 31 near the ground and is hinged to the housing 31. The copper nozzle 34 has a through hole 100 and several second through holes 200. The first through hole 100 is located at the center of the copper nozzle 34, and the several second through holes 200 are arranged around the first through hole 100. The laser output assembly 33 is disposed inside the housing 31 and extends vertically. One end of the laser output assembly 33 is connected to the first through hole 100, and the other end of the laser output assembly 33 is fixedly connected to the housing 31. The laser output assembly 33 is used to project laser light onto the surface of the wafer; the second base 32 is disposed inside the housing 31 on the side away from the ground and is rotatably connected to the end of the laser output assembly 33 away from the ground; a plurality of first jet channels 4 are disposed inside the housing 31, one end of the plurality of first jet channels 4 is fixedly connected to the second base 32, and the other end of the plurality of first jet channels 4 extends toward the ground and enters the second through hole 200 one by one; a synchronous swing mechanism 35 is fixedly disposed on the side of the copper nozzle 34 near the housing 31, and the synchronous swing mechanism 35 is used to synchronously adjust the distance between the end of the plurality of first jet channels 4 near the ground and the center of the first through hole 100.

[0029] The synchronous oscillation mechanism 35 can change the center distance of each first jet pipe 4 relative to the laser beam, thereby expanding or shrinking the spray range, suitable for wafer materials of different sizes or heat dissipation performance. The attached diagram shows four first jet pipes 4, which is not considered a limitation of the design; the number of first jet pipes 4 can be increased or decreased as needed. The first jet pipes 4 can form a water curtain to prevent debris from splashing everywhere during dicing, or to reduce the range of debris splashing.

[0030] The cross-sectional shape of several second through holes 200 is a rounded sector shape; and the center of the rounded sector shape is offset from the center of the first through hole 100; the synchronous swing mechanism 35 includes several fixed arms 351 and several pull rods 352. Several fixed arms 351 are fixedly connected to the end face of the copper nozzle 34, and the other end extends outward in a direction away from the first through hole 100. Several fixed arms 351 are provided with through long holes at the ends away from the first through hole 100. One end of several pull rods 352 is embedded in the long hole and slidably connected to the fixed arm 351. The other end of several pull rods 352 is embedded in the second through hole 200 and is arranged around the outer surface of the first jet pipe 4 near the ground; rotating the copper nozzle 34 causes several fixed arms 351 to rotate synchronously, which further drives several pull rods 352 to move along the second through hole 200, thereby adjusting the position of several first jet pipes 4 in the second through hole 200.

[0031] like Figure 3As shown, when the copper nozzle rotates clockwise, it drives the fixed arm 351 to rotate clockwise, thereby causing the pull rod 352 and the first jet pipe 4 to slide along the second through hole 200. This causes the first jet pipe 4 to move away from the central axis of the copper nozzle, that is, to move towards a virtual circle with a larger diameter. At this time, the plurality of first jet pipes 4 have a larger spray range surrounding the laser output component 33. Conversely, when the copper nozzle rotates counterclockwise, it drives the fixed arm 351 to rotate counterclockwise, thereby causing the pull rod 352 and the first jet pipe 4 to slide along the second through hole 200. This causes the first jet pipe 4 to move away from the central axis of the copper nozzle, that is, to move towards a virtual circle with a smaller diameter. At this time, the plurality of first jet pipes 4 have a smaller spray range surrounding the laser output component 33.

[0032] like Figure 1 As shown, in a preferred embodiment, several first jet pipes 4 extend in a zigzag pattern, with adjacent zigzag segments sealed together by elbows; several second jet pipes 5 are disposed on the side of the housing 1; both the first jet pipes 4 and the second jet pipes 5 are connected to a water source, and the first jet pipes 4 are made of a flexible material. As shown in the figure, the portion of the first jet pipe 4 between the copper nozzle and the second base is composed of several straight pipes and elbows.

[0033] In addition, the present invention provides a method for removing slag from a wafer dicing equipment, comprising the following steps: S1: Configure the wafer dicing equipment described above; several first jet pipes 4 and several second jet pipes 5 are all connected to a water source; the laser cutting head 3 moves to the initial dicing position.

[0034] S2: Based on the laser output power, laser processing speed, water pressure of several first jet pipes 4, water flow velocity at the end of several first jet pipes 4, water jet position of several first jet pipes 4, distance between laser spot and laser focus, and defocusing amount of laser focus, construct a material removal rate model for wafers. Specifically, the material removal rate model for the wafer is constructed by setting the laser output power to be... Laser processing speed is The outlet pressure of each first jet pipe 4 is The outflow rate of each first jet pipe 4 is The water flow velocity at the end of each first jet pipe 4 is The distance between the water jet position of the first jet pipe 4 and the laser spot is The defocusing amount of the laser focus is The focal length of the laser is The material removal rate model for the constructed wafer is then: ,in This is an empirical parameter, and its value range is (0,1).

[0035] Further preferred, the outlet water pressure of each first jet pipe 4 Satisfy the following relationship ,in The initial inlet pressure of the first jet pipe 4 is... This refers to the pressure loss within the first jet pipe 4. , As the friction factor, The total length of the broken-line section of the first jet pipe 4. The density of the water flow in the first jet pipe 4, The inner diameter of the first jet pipe 4 This represents the number of bends in the first jet pipe 4. This is the local loss coefficient. The theoretical water velocity is the velocity of the first jet channel 4 near the wafer end. Here These are theoretical values, used only to calculate the pressure loss of the medium within the first jet pipe 4.

[0036] Water flow velocity at the end of each first jet pipe 4 Not only pressure changes but also the influence of gravity must be considered; therefore, the water flow velocity at the end of the first jet pipe 4... Therefore, the calculation is based on the following formula: , The initial velocity of the water entering the first jet pipe 4, The height of the water inlet end of the first jet channel 4 relative to the wafer end face. The height of the water outlet end of the first jet pipe 4 relative to the wafer end face. This is the acceleration due to gravity.

[0037] S3: Adjust the input parameters of the wafer material removal rate model according to the wafer specifications and the set wafer material removal rate; S4: Perform trial processing of the first piece. The laser cutting head 3 outputs power and processing speed according to the set parameters. The spray positions of several first jet pipes 4 are set around the laser spot projected on the wafer surface. After the dicing is completed, several second jet pipes 5 are turned on. The carrier stage drives the wafer to rotate and rinses different positions on the wafer surface again. After the wafer dicing result of the trial processing is qualified, the batch wafer processing process is carried out using the current input parameters.

[0038] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A wafer dicing device, characterized in that, include: A hollow box (1) is fixed relative to the ground, with an opening at one end of the box (1) away from the ground; Rotary stage (2) is used to support wafers; The laser cutting head (3) is set above the opening of the housing (1) and is used to output laser and perform dicing on the wafer end face; Several first jet channels (4) are set inside the laser cutting head (3) to spray heat around the area of ​​the laser spot projected by the laser cutting head (3) onto the wafer end face; the spacing between the spray of the several first jet channels (4) and the laser spot is adjustable. Several second jet pipes (5) are set above the opening of the box (1) and are inclined relative to the rotary table (2) for secondary heat dissipation and slag removal rinsing of the wafer after dicing.

2. The wafer dicing equipment according to claim 1, characterized in that, The rotary table (2) is provided with a first base (21) at one end away from the ground. Several vacuum chucks (22) are arranged in an array on the first base (21). One end of the vacuum chuck (22) is fixedly connected to the first base (21), and the other end of the vacuum chuck (22) abuts against the end of the wafer close to the ground. Several vacuum chucks (22) are connected to the negative pressure generating mechanism pipe outside the box (1). Adjacent vacuum chucks (22) are spaced apart.

3. The wafer dicing equipment according to claim 2, characterized in that, The rotary table (2) is provided with a rotating shaft (23) inside. The rotary table (2) is fixedly connected to the end of the rotating shaft (23) away from the ground. The rotating shaft (23) is provided with a rotary drive device (24) at the end close to the ground. The output end of the rotary drive device (24) is connected to the rotating shaft (23) for transmission.

4. A wafer dicing apparatus according to claim 2, characterized in that, The laser cutting head (3) includes a housing (31), a second base (32), a laser output assembly (33), and a copper nozzle (34). The copper nozzle (34) is located at one end of the housing (31) near the ground and is hinged to the housing (31). The copper nozzle (34) has a through first hole (100) and several second holes (200). The first hole (100) is located at the center of the copper nozzle (34), and the several second holes (200) are arranged around the first hole (100). The laser output assembly (33) is located inside the housing (31). The laser output assembly (33) extends vertically. One end of the laser output assembly (33) is connected to the first hole (100), and the other end of the laser output assembly (33) is connected to the housing (31). The laser output assembly (33) is fixedly connected to project the laser onto the surface of the wafer; the second base (32) is located inside the housing (31) on the side away from the ground and is rotatably connected to the end of the laser output assembly (33) away from the ground; a plurality of first jet pipes (4) are located inside the housing (31), one end of the plurality of first jet pipes (4) is fixedly connected to the second base (32), and the other end of the plurality of first jet pipes (4) extends toward the ground and is inserted into the second through hole (200) one by one; a synchronous swing mechanism (35) is fixedly provided on the side of the copper nozzle (34) near the housing (31), and the synchronous swing mechanism (35) is used to synchronously adjust the distance between the end of the plurality of first jet pipes (4) near the ground and the center of the first through hole (100).

5. A wafer dicing apparatus according to claim 4, characterized in that, The cross-sectional shape of several second through holes (200) is a rounded sector shape; and the center of the rounded sector shape is offset from the center of the first through hole (100); the synchronous swing mechanism (35) includes several fixed arms (351) and several pull rods (352), several fixed arms (351) are fixedly connected to the end face of the copper nozzle (34), and the other end extends outward in a direction away from the first through hole (100), and the ends of several fixed arms (351) away from the first through hole (100) are provided with through elongated holes, several One end of the pull rod (352) is embedded in the elongated hole and slidably connected to the fixed arm (351). The other end of several pull rods (352) is embedded in the second through hole (200) and is arranged around the outer surface of the first jet pipe (4) near the ground. Rotating the copper nozzle (34) causes several fixed arms (351) to rotate synchronously, which further drives several pull rods (352) to move along the second through hole (200), thereby adjusting the position of several first jet pipes (4) in the second through hole (200).

6. A wafer dicing apparatus according to claim 5, characterized in that, Several first jet pipes (4) are arranged in a zigzag shape, and adjacent zigzag segments are sealed and connected by elbows; several second jet pipes (5) are arranged on the side of the box (1); several first jet pipes (4) and several second jet pipes (5) are connected to the water source, and the material of several first jet pipes (4) is flexible material.

7. A method for removing slag from a wafer dicing equipment, characterized in that, Includes the following steps: S1: The wafer dicing equipment as described in any one of claims 5-6 is configured; a plurality of first jet pipes (4) and a plurality of second jet pipes (5) are connected to a water source; the laser cutting head (3) is moved to the initial position of dicing; S2: Based on the laser output power, laser processing speed, water pressure of several first jet pipes (4), water flow velocity at the end of several first jet pipes (4), water jet position of several first jet pipes (4) and distance from laser spot and defocus of laser focus, a material removal rate model for wafer is constructed. S3: Adjust the input parameters of the wafer material removal rate model according to the wafer specifications and the set wafer material removal rate; S4: Perform trial processing of the first piece. The laser cutting head (3) outputs power and processing speed according to the set power. The spray positions of several first jet pipes (4) are set around the laser spot projected on the wafer surface. After the dicing is completed, several second jet pipes (5) are turned on. The carrier stage drives the wafer to rotate and rinses different positions on the wafer surface again. After the wafer dicing result of the trial processing is qualified, the current input parameters are used to carry out the batch wafer processing process.

8. The slag removal method of a wafer dicing equipment according to claim 7, characterized in that, In step S2, the material removal rate model for the wafer is constructed by setting the laser output power to be... Laser processing speed is The outlet pressure of each first jet pipe (4) is The outflow rate of each first jet pipe (4) is The water flow velocity at the end of each first jet pipe (4) is The distance between the water jet position of the first jet pipe (4) and the laser spot is The defocusing amount of the laser focus is The focal length of the laser is The material removal rate model for the constructed wafer is then: ,in These are empirical parameters.

9. The slag removal method of a wafer dicing equipment according to claim 8, characterized in that, Water outlet pressure of each first jet pipe (4) Satisfy the following relationship ,in The initial inlet pressure of the first jet pipe (4) is... The pressure loss within the first jet conduit (4), , As the friction factor, The total length of the broken-line section of the first jet conduit (4) is given. The density of the water flow in the first jet pipe (4) The inner diameter of the first jet conduit (4) is... The number of bends in the first jet pipe (4) This is the local loss coefficient. The theoretical water velocity at the end of the first jet channel (4) near the wafer is given. .

10. The method for removing slag from a wafer dicing equipment according to claim 9, characterized in that, The water flow velocity at the end of each first jet pipe (4) Calculate according to the following formula: , The initial velocity of the water entering the first jet pipe (4) is... The height of the water inlet end of the first jet pipe (4) relative to the wafer end face. The height of the water outlet end of the first jet pipe (4) relative to the wafer end face. This is the acceleration due to gravity.

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