Long and thin pipe inner wall multilayer film continuous deposition device with shielding cover and axial splicing column target and using method of long and thin pipe inner wall multilayer film continuous deposition device

Abstract

The invention discloses a long and thin pipe inner wall multilayer film continuous deposition device with a shielding cover and an axial splicing column target and a use method of the long and thin pipe inner wall multilayer film continuous deposition device. The method belongs to the field of surface treatment. The problems that multiple layers of films cannot be continuously prepared and different areas of a target surface pollute each other in the coating process in the existing slender tube are solved. The device comprises a magnetic control target, a shielding cover, a magnetic core, a to-be-plated tube, an insulating bracket and a guide rail, the magnetic control target is formed by splicing a plurality of cylindrical target materials with different components in the axial direction, the guide rail is parallel to the magnetic control target, the insulating support can drive the shielding cover and the to-be-plated pipe to slide up and down along the magnetic control target, the magnetic core is arranged in the magnetic control target and slides up and down along the magnetic control target, and plasma can be restrained in an area defined by the magnetic control target, the to-be-plated pipe and the shielding cover. The target material in a non-discharge area is protected from being polluted, and the target materials with different components can be switched. The device is simple and convenient to operate, the whole process is closely linked, the problems existing in other in-pipe coating methods are effectively solved, and large-scale popularization in industrial production is facilitated.

Description

Technical Field

[0001] This invention belongs to the field of surface treatment, specifically relating to a continuous deposition apparatus for multilayer films on the inner wall of a slender tube with a shield and an axially spliced ​​column target, and its method of use. Background Technology

[0002] Currently, in-tube magnetron sputtering technology, as one of the most effective methods for uniform preparation of PVD coatings in tubes, has attracted widespread attention. Existing in-tube column-target coating devices can usually only complete the preparation of coatings of a single component. This is mainly due to the limitations of the overall structure of the device. Devices that can be used for multi-component multilayer film deposition need to have multiple autonomously selective discharge regions containing different components.

[0003] Based on existing target and in-tube deposition schemes, the development of devices for in-tube multi-component multilayer film deposition using target columns faces several challenges: 1. The precision of the magnetron target switching process is difficult to guarantee. Using multiple targets for switching deposition is a common approach for multilayer film preparation in conventional environments. However, for in-tube target deposition, the switching process requires removing one target and then coaxially installing another target with the tube to be deposited. This places extremely high demands on the overall precision of the device, and the switching process is cumbersome. The long time interval will significantly affect the interface quality of the multilayer film; 2. The discharge characteristics of different components vary greatly. Different regions of the target material need to be properly distinguished (simultaneous discharge of different component targets should be avoided as much as possible) and connected during the discharge process (the power supply should avoid continuous operation during the switching process of different component targets). The patent CN 115181939B, entitled "A Method for Preparing Nanoscale Multilayer Thin Films and Alloy Thin Films by Rotary Target Layered Sputtering," involves a continuously rotating target and a continuously operating power supply. In practical applications, only targets with similar discharge ranges can be spliced ​​together, and only multilayer film deposition with specific thickness ratios and component sequences can be achieved. 3. Splicing different target components in magnetron splicing is difficult. For example, in the splicing method of CN115181939B, different target components need to be processed into arc columns of the same radius, which is difficult to process. Furthermore, due to the long gaps and inconsistent materials at the joints between different targets, it is difficult to use safer welding methods; only a cylindrical liner can be applied for water channel sealing. The liner method limits the cooling capacity of the magnetron target, thus affecting the process range and coating quality. Meanwhile, due to the radial splicing of multiple targets in this patent, the unfolding angle of each target is limited, which further limits the number of spliced ​​targets; 4. During the discharge process of the target, a large number of target atoms and ions will escape into the surrounding space and be adsorbed onto the surrounding device, which will cause other target surface materials to be contaminated and change the purity of the target coating.

[0004] In summary, there is currently no practical system or method for continuous deposition of multi-component multilayer films on the inner wall of a pipe. The key issues facing continuous deposition of multilayer films on the inner wall of a pipe are how to design a magnetron sputtering target with multi-component targets that can be used for in-pipe column target coating, design the multi-component target arrangement and splicing method of the magnetron sputtering target, control the target switching method and switching time, and avoid cross-contamination between targets. Summary of the Invention

[0005] The purpose of this invention is to solve the problem that multilayer films cannot be continuously prepared and different areas of the target surface are contaminated during the existing coating process inside slender tubes. The invention provides a continuous deposition device for multilayer films on the inner wall of slender tubes with a shield and an axially spliced ​​column target, as well as a method for using the device.

[0006] A continuous deposition apparatus for multilayer films on the inner wall of a slender tube with a shield and an axially spliced ​​column target, comprising a magnetron target, a shield, a magnetic core, a tube to be deposited, an insulating support, and a guide rail;

[0007] The magnetron target is composed of N cylindrical target materials spliced ​​together, where N=1, 2, 3...10. Each target material is spliced ​​together along the axial direction, and the material of each target material can be the same or different; the magnetron target can move along the axial direction.

[0008] The magnetron target, shield, and tube to be plated are coaxially mounted and insulated from each other; the guide rail is parallel to the magnetron target; the insulating bracket is connected to the shield and the tube to be plated respectively, and can drive the shield and the tube to be plated to slide up and down along the magnetron target; the magnetic core is placed inside the magnetron target and can slide up and down along the magnetron target.

[0009] Furthermore, the magnetic core, the shielding cover, and the tube to be plated are fixed in relative positions, with the three centered vertically.

[0010] Furthermore, the shielding cover is a single piece of stainless steel, with the upper part being a round tube and the lower part being a circular ring, and the diameter of the circular ring being larger than the inner diameter of the tube to be plated.

[0011] Furthermore, there are two shielding covers, which are symmetrically placed on the upper and lower sides of the tube to be plated, with the rings of the two shielding covers facing the tube to be plated.

[0012] Furthermore, each target material in the magnetron sputtering target has the same length and is larger than the magnetic core, and adjacent target materials are spliced ​​together by welding or mechanical connection.

[0013] Furthermore, the magnetron target penetrates the tube to be plated, and the length of each magnetron target material in the magnetron target is greater than that of the tube to be plated. The two ends of the magnetron target extend from the upper ends of the circular tubes of the two shields.

[0014] Furthermore, each target material in the magnetron sputtering target is made of conductive metal or non-metal; during the deposition process, the magnetron sputtering target is connected to the negative terminal of the target power supply, and the tube to be deposited is connected to the positive terminal of the target power supply.

[0015] The above-mentioned method of using a continuous deposition apparatus for multilayer films on the inner wall of a slender tube with a shield and an axially spliced ​​column target is implemented according to the following steps:

[0016] I. Preprocessing:

[0017] After polishing the shielding cover and the tube to be plated, ultrasonically clean them with acetone and anhydrous ethanol for 5-60 minutes in sequence.

[0018] II. In-tube plasma cleaning:

[0019] The vacuum chamber was evacuated to 8×10⁻⁶. -3 Introduce working gas and adjust the vacuum chamber pressure to 0.01~20Pa. Adjust the positions of the shield, magnetic core, and tube to be coated to the cleaning position in the magnetron target. Connect the magnetron target to the positive terminal of the target power supply and the tube to be coated to the negative terminal of the target power supply. Adjust the target power supply parameters and perform plasma cleaning of the inner wall of the tube to be coated. The cleaning time is 1~300min, and the cleaned tube to be coated is obtained.

[0020] III. Deposition of coating M, M=1, 3, 4, ... 100:

[0021] Turn off the target power supply, adjust the positions of the shield, magnetic core, and tube to be coated to the corresponding positions of the coating material M in the magnetron sputtering target, connect the magnetron sputtering target to the negative terminal of the target power supply, and connect the tube to be coated to the positive terminal of the target power supply. Adjust the target power supply parameters, working gas type, and gas pressure parameters, and deposit the coating M on the cleaned tube. The deposition time is 1~300min. A multilayer film with continuous deposition is obtained on the inner wall of the tube to be coated, thus completing the above-described usage method.

[0022] Furthermore, the working gases mentioned in steps two and three are all one or a mixture of several of the following: He, Ne, Ar, Kr, Xe, Rn, N2, O2, H2, CH4, H2S, NH3, or C2H4.

[0023] Furthermore, the adjustments to the positions of the shielding cover, magnetic core, and tube to be plated, as well as the adjustment of the target power parameters, working gas type, and gas pressure parameters, as described in steps two and three, are all automatically completed through program control.

[0024] The principle and beneficial effects of this invention:

[0025] A major challenge in PVD deposition on the inner walls of slender tubes is the limitation imposed by the target structure and the size of the internal space, making it difficult to achieve continuous switching and use of multi-component targets within the tube. This has resulted in most current PVD coatings being single-component coatings, severely restricting the development of multi-layer film structures on the inner walls of slender tubes. This invention addresses this issue by rationally designing the structure of the magnetic core, magnetron target, and shield, and adjusting the relative positions of the magnetic core, shield, and tube to be coated with the magnetron target. By selecting a suitable area on the magnetron target for discharge, a switchable multi-component magnetron target continuous deposition device is designed. By adjusting the relative positions of the magnetic core, tube to be coated, and magnetron targets of different components, selective sputtering deposition of different component coatings can be achieved. Combined with the synchronous adjustment of the shield position, contamination of other component targets during sputtering of different component magnetron targets is avoided. By adjusting the process time for each component, the single-layer thickness and relative thickness of multiple layers of different component coatings can be customized. Furthermore, the switching of magnetron targets for each component is unrestricted, enabling the seamless connection and continuous deposition of coatings of any component.

[0026] The device of this invention is simple, easy to operate, and the entire process is tightly integrated, consistent with the conventional planar multilayer film continuous deposition process. It effectively overcomes the problems existing in other in-tube coating methods, has good application prospects, and is conducive to large-scale promotion in industrial production. At the same time, this invention fully considers various problems that may exist during system operation, such as cross-contamination during the process of different component magnetron targets, multi-component magnetron target structure problems, and control of the relative size and position between the magnetic core, magnetron target, and shield, etc., and can be directly applied to industrial production.

[0027] The device of the present invention is also applicable to in-tube column target arc ion plating, internal and external surface treatment of irregular parts or surface treatment of planar parts; it is also applicable to surface treatment processes such as nitriding, carburizing, sulfiding and oxidation.

[0028] The present invention provides a continuous deposition apparatus for multilayer films on the inner wall of a slender tube with a shielding cover and an axially spliced ​​column target. This apparatus is suitable for plasma cleaning of the inner wall of slender cylindrical workpieces and the continuous preparation of single-component or multi-component coatings. Attached Figure Description

[0029] Figure 1 This is a schematic diagram illustrating the continuous preparation of single-component or multi-component coatings for plasma cleaning of the inner wall of a slender tubular workpiece according to the present invention. In the diagram, 1 represents a magnetron target, 2 represents a shielding cover, 3 represents a magnetic core, 4 represents the tube to be coated, 5 represents an insulating support, and 6 represents a guide rail.

[0030] Figure 2 The multilayer film prepared using a magnetron sputtering target material comprising two components, Cr and Ta, as described in Example 1;

[0031] Figure 3This is a schematic diagram of the magnetron target in Example 2, which includes four different components. In the diagram, 1-1 indicates that the magnetron target material is Ti, 1-2 indicates that the magnetron target material is Ti7Al3, 1-3 indicates that the magnetron target material is Cr7Al3, 1-4 indicates that the magnetron target material is Cr, 1-5 indicates that the magnetron target material is graphite, and 3 indicates the magnetic core. Detailed Implementation

[0032] Specific implementation method one: as follows Figure 1 As shown in the figure, this embodiment is a continuous deposition apparatus for multilayer films on the inner wall of a slender tube with a shield and an axially spliced ​​column target. It includes a magnetron target 1, a shield 2, a magnetic core 3, a tube to be deposited 4, an insulating support 5, and a guide rail 6.

[0033] The magnetron target is composed of N cylindrical target materials spliced ​​together, where N=1, 2, 3...10. Each target material is spliced ​​together along the axial direction, and the material of each target material can be the same or different; the magnetron target 1 can move along the axial direction.

[0034] The magnetron target 1, shield 2, and tube to be plated 4 are coaxially mounted and insulated from each other; the guide rail 6 is parallel to the magnetron target 1; the insulating bracket 5 is connected to the shield 2 and the tube to be plated 4 respectively, and can drive the shield 2 and the tube to be plated 4 to slide up and down along the magnetron target 1; the magnetic core 3 is placed inside the magnetron target 1 and can slide up and down along the magnetron target 1.

[0035] Specific Implementation Method Two: This implementation method differs from Specific Implementation Method One in that the relative positions of the magnetic core 3, the shielding cover 2, and the tube to be plated 4 are fixed, and the three are centered vertically. Everything else is the same as in Specific Implementation Method One.

[0036] Specific Implementation Method 3: This implementation method differs from Specific Implementation Method 1 in that the shielding cover 2 is a single piece of stainless steel. The upper part of the shielding cover 2 is a circular tube, and the lower part is a circular ring, with the diameter of the circular ring being larger than the inner diameter of the tube 4 to be plated. Everything else is the same as in Specific Implementation Method 1.

[0037] Specific Implementation Method Four: This implementation method differs from Specific Implementation Method One in that there are two shielding covers 2, which are symmetrically placed on the upper and lower sides of the tube to be plated 4, with the annulus of the two shielding covers facing the tube to be plated 4. Everything else is the same as in Specific Implementation Method One.

[0038] Specific Implementation Method Five: This implementation method differs from Specific Implementation Method One in that each target material in the magnetron sputtering target 1 has the same length and is all greater than the magnetic core 3. Adjacent target materials are spliced ​​together by welding or mechanical connection. Everything else is the same as in Specific Implementation Method One.

[0039] Specific Implementation Method Six: This implementation method differs from Specific Implementation Method One in that the magnetron target 1 penetrates through the tube to be plated 4, and the length of each magnetron target material in the magnetron target 1 is greater than that of the tube to be plated 4. Both ends of the magnetron target 1 extend beyond the upper ends of the circular tubes of the two shielding covers. Everything else is the same as in Specific Implementation Method One.

[0040] Specific Implementation Method Seven: This implementation method differs from Specific Implementation Method One in that each target material in the magnetron sputtering target 1 is made of conductive metal or non-metal; during the deposition process, the magnetron sputtering target 1 is connected to the negative terminal of the target power supply, and the tube to be deposited 4 is connected to the positive terminal of the target power supply. Everything else is the same as in Specific Implementation Method One.

[0041] Specific Implementation Method Eight: This embodiment describes a method for using a continuous deposition apparatus for multilayer films on the inner wall of a slender tube with a shielding cover and an axially spliced ​​column target. It is implemented according to the following steps:

[0042] I. Preprocessing:

[0043] After polishing the shielding cover 2 and the tube to be plated 4, ultrasonically clean them with acetone and anhydrous ethanol for 5-60 minutes in sequence.

[0044] II. In-tube plasma cleaning:

[0045] The vacuum chamber was evacuated to 8×10⁻⁶. -3 Introduce working gas and adjust the vacuum chamber pressure to 0.01~20Pa. Adjust the positions of shielding cover 2, magnetic core 3 and tube to be coated 4 to the cleaning position in magnetron target 1. Connect magnetron target 1 to the positive terminal of the target power supply and tube to be coated 4 to the negative terminal of the target power supply. Adjust the target power supply parameters and perform plasma cleaning of the inner wall of tube to be coated 4. The cleaning time is 1~300min, and the cleaned tube to be coated 4 is obtained.

[0046] III. Deposition of coating M, M=1, 3, 4, ... 100:

[0047] Turn off the target power supply, adjust the positions of the shield 2, magnetic core 3, and tube 4 to be coated to the corresponding positions of the coating material M in the magnetron sputtering target 1, connect the magnetron sputtering target 1 to the negative terminal of the target power supply, connect the tube 4 to be coated to the positive terminal of the target power supply, adjust the target power supply parameters, working gas type and gas pressure parameters, and deposit the coating M on the cleaned tube 4. The deposition time is 1~300min, and a multilayer film with continuous deposition is obtained on the inner wall of the tube 4, thus completing the above-described usage method.

[0048] Specific Implementation Method Nine: This implementation method differs from Specific Implementation Method Eight in that the working gas mentioned in steps two and three is one or a mixture of several of He, Ne, Ar, Kr, Xe, Rn, N2, O2, H2, CH4, H2S, NH3, or C2H4. Other steps and parameters are the same as in Specific Implementation Method Eight.

[0049] In this embodiment, when the working gas is a mixed gas, it is mixed in any ratio.

[0050] Specific Implementation Method Ten: This implementation method differs from Specific Implementation Method Eight in that the position adjustment of the shielding cover 2, magnetic core 3, and tube to be plated 4, as well as the adjustment of the target power supply parameters, working gas type, and gas pressure parameters mentioned in steps two and three, are all automatically completed through program control. Other steps and parameters are the same as in Specific Implementation Method Eight.

[0051] The beneficial effects of the present invention are verified through the following embodiments:

[0052] Example 1:

[0053] A method for using a continuous deposition apparatus for multilayer films on the inner wall of a slender tube with a shielding cover and an axially spliced ​​column target, comprising the following steps:

[0054] I. Preprocessing:

[0055] After polishing the shielding cover 2 and the tube to be plated 4, ultrasonic cleaning was performed with acetone and anhydrous ethanol for 30 minutes in sequence.

[0056] II. In-tube plasma cleaning:

[0057] The vacuum chamber was evacuated to 8×10⁻⁶. -3 Introduce working gas and adjust the vacuum chamber pressure to 0.5 Pa. Adjust the positions of shield 2, magnetic core 3 and tube to be plated 4 to the cleaning position in magnetron target 1. Connect magnetron target 1 to the positive terminal of the target power supply and tube to be plated 4 to the negative terminal of the target power supply. Adjust the target power supply parameters and perform plasma cleaning of the inner wall of tube to be plated 4. The cleaning time is 30 min, and the cleaned tube to be plated 4 is obtained.

[0058] III. Deposition of coating M, M=1, 3, 4, ... 100:

[0059] Turn off the target power supply, adjust the positions of the shield 2, magnetic core 3, and tube 4 to be coated to the corresponding positions of the coating material M in the magnetron sputtering target 1, connect the magnetron sputtering target 1 to the negative terminal of the target power supply, connect the tube 4 to be coated to the positive terminal of the target power supply, adjust the target power supply parameters, working gas type and gas pressure parameters, and deposit the coating M on the cleaned tube 4. The deposition time is 1~300min, and a multilayer film with continuous deposition is obtained on the inner wall of the tube 4, thus completing the above-described usage method.

[0060] In this embodiment, the working gas mentioned in steps two and three is Ar.

[0061] In this embodiment, the position adjustment of the shield 2, magnetic core 3, and tube to be plated 4, as well as the adjustment of the target power supply parameters, working gas type, and gas pressure parameters, are all automatically completed through program control in steps two and three.

[0062] In this embodiment, when the coating M is an odd number, the magnetron target material is Cr, the target power supply is a bipolar pulse power supply with a pulse frequency of 300Hz, a negative pulse voltage of 600V and a pulse width of 100μs, and a positive pulse voltage of 100V and a pulse width of 50μs. The deposition time for each Cr layer is 30min.

[0063] In this embodiment, when the coating M is an even number, the magnetron target material is Ta. The target power supply is a bipolar pulse power supply with a pulse frequency of 300Hz, a negative pulse voltage of 560V and a pulse width of 100μs, and a positive pulse voltage of 100V and a pulse width of 50μs. The deposition time for each Ta layer is 7 minutes.

[0064] In step one of this embodiment, the tube 4 to be coated is a carbon steel tube with a length of 200 mm and an inner diameter of 60 mm. The total deposition time is 20 hours. Through multiple rounds of deposition, continuous deposition of alternating Cr / Ta multilayer films on the inner wall of the tube is achieved. Figure 2 As shown.

[0065] Example 2:

[0066] The difference between this embodiment and Embodiment 1 is that the magnetron target is composed of five different magnetron target materials: Cr, Ti, Cr7Al3, Ti7Al3, and graphite. A schematic diagram is shown below. Figure 3 As shown;

[0067] In step one, the tube to be plated, tube 4, is a stainless steel tube with a length of 100mm and an inner diameter of Φ40mm. The multilayer film consists of 5 layers.

[0068] The target material for the magnetron sputtering target 1 is Ti. The target power supply is a bipolar pulse power supply with a pulse frequency of 300Hz, a negative pulse voltage of 500V and a pulse width of 100μs, and a positive pulse voltage of 100V and a pulse width of 50μs.

[0069] The target material for the magnetron sputtering target of coating 2 is Ti7Al3. The target power supply is a bipolar pulse power supply with a pulse frequency of 300Hz, a negative pulse voltage of 470V and a pulse width of 100μs, and a positive pulse voltage of 100V and a pulse width of 50μs.

[0070] The target material for the magnetron sputtering target with coating 3 is Cr7Al3. The target power supply is a bipolar pulse power supply with a pulse frequency of 300Hz, a negative pulse voltage of 550V and a pulse width of 100μs, and a positive pulse voltage of 100V and a pulse width of 50μs.

[0071] The target material for the magnetron sputtering target with coating 4 is Cr. The target power supply is a bipolar pulse power supply with a pulse frequency of 300Hz, a negative pulse voltage of 600V and a pulse width of 100μs, and a positive pulse voltage of 100V and a pulse width of 50μs.

[0072] The target material for the magnetron sputtering target of coating 5 is graphite, and the target power supply is a bipolar pulse power supply with a pulse frequency of 300Hz, a negative pulse voltage of 650V and a pulse width of 100μs, and a positive pulse voltage of 300V and a pulse width of 50μs; all other aspects are the same as in Example 1.

[0073] In this embodiment, through multiple rounds of deposition, a five-layer film structure was achieved on the inner wall of the tube, consisting of Ti, Ti7Al3, Cr7Al3, Cr, and DLC in sequence from the interface to the surface.

[0074] In this embodiment, the device is also suitable for in-tube column target arc ion plating, surface treatment of irregularly shaped parts or surface treatment of planar parts; it is also suitable for surface treatment processes such as nitriding, carburizing, sulfiding and oxidation.

[0075] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A continuous deposition apparatus for multilayer films on the inner wall of a slender tube with a shielding cover and an axially spliced ​​column target, characterized in that, It includes a magnetron target (1), a shield (2), a magnetic core (3), a tube to be plated (4), an insulating support (5), and a guide rail (6). The magnetically controlled target is composed of N cylindrical target materials spliced ​​together, where N=1, 2, 3...

10. Each target material is spliced ​​together along the axial direction, and the material of each target material can be the same or different; the magnetically controlled target (1) can move along the axial direction. The magnetron target (1), shield (2), and plated tube (4) are coaxially mounted and insulated from each other; the guide rail (6) is parallel to the magnetron target (1); the insulating bracket (5) is connected to the shield (2) and the plated tube (4) respectively, and can drive the shield (2) and the plated tube (4) to slide up and down along the magnetron target (1); the magnetic core (3) is placed inside the magnetron target (1) and can slide up and down along the magnetron target (1).

2. The continuous deposition apparatus for multilayer films on the inner wall of a slender tube with a shielding cover and an axially spliced ​​column target according to claim 1, characterized in that... The magnetic core (3) is fixed in relative position to the shield (2) and the tube to be plated (4), with the three of them centered vertically.

3. The continuous deposition apparatus for multilayer films on the inner wall of a slender tube with a shielding cover and an axially spliced ​​column target according to claim 1, characterized in that... The shielding cover (2) is a single piece of stainless steel. The upper part of the shielding cover (2) is a round tube and the lower part is a ring, and the diameter of the ring is larger than the inner diameter of the tube (4) to be plated.

4. The continuous deposition apparatus for multilayer films on the inner wall of a slender tube with a shielding cover and an axially spliced ​​column target according to claim 1, characterized in that... There are two shields (2), which are symmetrically placed on the upper and lower sides of the tube to be plated (4), and the rings of the two shields face the tube to be plated (4).

5. The continuous deposition apparatus for multilayer films on the inner wall of a slender tube with a shield and an axially spliced ​​column target according to claim 1, characterized in that... Each target material in the magnetron target (1) has the same length and is larger than the magnetic core (3). Adjacent target materials are spliced ​​together by welding or mechanical connection.

6. The continuous deposition apparatus for multilayer films on the inner wall of a slender tube with a shielding cover and an axially spliced ​​column target according to claim 1, characterized in that... The magnetron target (1) penetrates the tube to be plated (4). The length of each magnetron target material in the magnetron target (1) is greater than that of the tube to be plated (4). The two ends of the magnetron target (1) extend from the upper end of the round tube of the two shields.

7. The continuous deposition apparatus for multilayer films on the inner wall of a slender tube with a shielding cover and an axially spliced ​​column target according to claim 1, characterized in that... Each target material in the magnetron target (1) is made of conductive metal or non-metal; during the deposition process, the magnetron target (1) is connected to the negative terminal of the target power supply, and the tube to be deposited (4) is connected to the positive terminal of the target power supply.

8. The method of using the continuous deposition apparatus for a slender tube inner wall multilayer film with a shielding cover and an axially spliced ​​column target as described in claim 1, characterized in that, It is implemented in the following steps: I. Preprocessing: After polishing the shield (2) and the tube to be plated (4), ultrasonically clean them with acetone and anhydrous ethanol for 5-60 minutes in sequence. II. In-tube plasma cleaning: The vacuum chamber was evacuated to 8×10⁻⁶. -3 Introduce working gas and adjust the vacuum chamber pressure to 0.01~20Pa. Adjust the positions of the shield (2), magnetic core (3) and the tube to be plated (4) to the cleaning position in the magnetron target (1). Connect the magnetron target (1) to the positive terminal of the target power supply and the tube to be plated (4) to the negative terminal of the target power supply. Adjust the target power supply parameters and perform plasma cleaning of the inner wall of the tube to be plated (4). The cleaning time is 1~300min, and the cleaned tube to be plated (4) is obtained. III. Deposition of coating M, M=1, 3, 4, ... 100: Turn off the target power supply, adjust the positions of the shield (2), magnetic core (3) and the tube to be coated (4) to the corresponding positions of the coating material M in the magnetron sputtering target (1), connect the magnetron sputtering target (1) to the negative terminal of the target power supply, connect the tube to be coated (4) to the positive terminal of the target power supply, adjust the target power supply parameters, working gas type and gas pressure parameters, and deposit the coating M on the cleaned tube to be coated (4) for 1~300 min. The inner wall of the tube to be coated (4) will obtain a continuously deposited multilayer film, thus completing the above-described usage method.

9. The method of using the continuous deposition apparatus for a slender tube inner wall multilayer film with a shielding cover and an axially spliced ​​column target as described in claim 8, characterized in that... The working gases mentioned in steps two and three are one or a mixture of several of the following: He, Ne, Ar, Kr, Xe, Rn, N2, O2, H2, CH4, H2S, NH3, or C2H4.

10. The method of using the continuous deposition apparatus for a slender tube inner wall multilayer film with a shielding cover and an axially spliced ​​column target as described in claim 8, characterized in that... The position adjustment of the shield (2), magnetic core (3) and the tube to be plated (4) in steps two and three, as well as the adjustment of the target power supply parameters, working gas type and pressure parameters, are all automatically completed through program control.

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