Method for preparing film layer on surface of substrate and product comprising film layer

Abstract

The embodiment of the invention relates to a method for preparing a film layer on the surface of a base material and a product comprising the film layer prepared by the method for preparing the film layer on the surface of the base material. The method for preparing the film layer on the surface of the base material comprises the following steps: placing the base material in a cavity; introducing silicon-containing inorganic compound gas or steam and oxygen-containing inorganic compound gas or steam into the chamber; and starting a plasma source to deposit and form the film layer on the surface of the substrate under a plasma discharge condition. According to the embodiment of the invention, the performance of the film layer can be relatively stable, the preparation process is relatively simple, the film layer can be applied to industrial production in a large scale, and the film layer is hydrophilic while the optical performance of the base material is reduced slightly or the optical performance of the base material is improved.

Description

Technical Field

[0001] This application relates to the field of surface treatment technology, and more particularly to a method for preparing a film layer on the surface of a substrate and a product comprising the film layer prepared by the method for preparing a film layer on the surface of a substrate. Background Technology

[0002] Products such as goggles, laser safety goggles, telescopes, camera lenses, observation windows of mechanical devices, sports diving masks, bathroom glass, chemical and / or biological protective masks, vehicle windshields and / or rearview mirrors, bomb disposal protective equipment, helmets, solar panels, observation windows of measuring instruments, glass covers, greenhouse glass walls, and architectural glass, including optical elements made of materials such as glass, ceramics, plastics, and / or polymers. These products sometimes require surface treatment for applications requiring hydrophilicity, etc.

[0003] Some existing surface treatment methods involve forming films using solvent-based liquid treatments, which often suffer from film performance instability due to solvent residue. Other examples of existing surface treatment methods include sol-gel methods, layer-by-layer self-assembly methods, and template methods. Sol-gel methods form films through solution deposition, suitable for large-area coating, but suffer from poor film transmittance and uneven surface structure. Furthermore, films prepared by sol-gel methods are susceptible to changes in humidity and temperature, leading to degradation of hydrophilicity and anti-fogging properties, and exhibiting poor durability and stability with a short lifespan. Layer-by-layer self-assembly methods form films by alternating deposition of charged materials, offering good controllability and high self-organization capabilities. However, this method has a long preparation time, difficulty in controlling film thickness, and poor film uniformity. In addition, this method has high requirements for material selection and substrate compatibility; unstable adhesion between the film and substrate may occur during preparation, affecting long-term film performance. Template methods construct films with specific morphologies using template structures. Although this method can produce membranes with specific pore structures, its industrial application is limited due to the complexity of the template removal process, which can easily damage the integrity of the membrane, and the limitations on the selection and compatibility of template materials.

[0004] It is evident that existing surface treatment methods each have their advantages and disadvantages, and share some common technical challenges, such as: improving film transmittance and clarity, maintaining and stabilizing hydrophilicity and anti-fogging properties, ensuring film durability and anti-fouling properties, and addressing process complexity and inefficiency. Crucially, most existing surface treatment methods are relatively complex, making large-scale industrial application difficult. Furthermore, existing methods generally struggle to balance hydrophilicity and optical properties, often significantly reducing the substrate's optical performance while simultaneously making the substrate surface hydrophilic.

[0005] Therefore, there is a need for improved methods for preparing films on the surface of substrates, and for products containing films prepared by such methods. Summary of the Invention

[0006] One object of this application is to provide an improved method for preparing a film layer on the surface of a substrate and a product comprising the film layer prepared by the method for preparing a film layer on the surface of a substrate.

[0007] To achieve the above objectives, one aspect of this application relates to a method for preparing a film layer on the surface of a substrate, comprising: placing the substrate within a chamber; introducing a silicon-containing inorganic compound gas or vapor and an oxygen-containing inorganic compound gas or vapor into the chamber; and activating a plasma source to deposit the film layer on the surface of the substrate under plasma discharge conditions.

[0008] The embodiments of this application can help to make the film layer more stable in performance, the preparation process is relatively simple, and it can be used on a large scale in industrial production. While the film layer is hydrophilic, it has little effect on the optical performance of the substrate or even improves the optical performance of the substrate.

[0009] In some embodiments, the silicon-containing inorganic compound includes SiH4, Si2H6, and Si4H 10 One or more of the following: SiH(SiH3)3, SiCl4, SiHCl3, SiH3Cl, SiH2Cl2, SiHCl3, and Si2Cl6. This allows for the use of silicon-containing inorganic compounds with relatively simple structures, lower costs, and / or the ability to be presented in a gaseous or vaporous state at a lower cost during film preparation.

[0010] In some embodiments, the oxygen-containing inorganic compound includes one or more of N2O, O2, O3, and H2O. This can contribute to a simpler structure, lower cost, and / or allow the oxygen-containing inorganic compound to be presented in a gaseous or vaporous state at a lower cost during the film preparation process.

[0011] In some embodiments, when the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the silicon unit flow ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:2.5 to 1:10. The silicon unit flow ratio is the flow ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor corresponding to one silicon atom in the chemical formula of the silicon-containing inorganic compound. This can improve the hydrophilicity and anti-fogging properties of the film layer, and may even increase the light transmittance of the substrate.

[0012] In some embodiments, the oxygen-containing inorganic compound includes N₂O. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the silicon unit flow ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:4 to 1:10, or 1:4.5 to 1:7. The silicon unit flow ratio is the flow ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor corresponding to one silicon atom in the chemical formula of the silicon-containing inorganic compound. This can contribute to excellent hydrophilicity and anti-fogging properties of the film layer, and may even improve the light transmittance of the substrate.

[0013] In some embodiments, the oxygen-containing inorganic compound includes O2. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the silicon unit flow ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:2.5 to 1:8, or 1:3 to 1:5. The silicon unit flow ratio is the flow ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor corresponding to one silicon atom in the chemical formula of the silicon-containing inorganic compound. This can improve the hydrophilicity and anti-fogging properties of the film layer, and may even increase the light transmittance of the substrate.

[0014] In some embodiments, the silicon-containing inorganic compound includes SiH4, and the oxygen-containing inorganic compound includes N2O. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:4 to 1:10, or 1:4.5 to 1:7. This can contribute to excellent hydrophilicity and anti-fogging properties of the film layer, and may even improve the light transmittance of the substrate.

[0015] In some embodiments, the silicon-containing inorganic compound includes SiH4, and the oxygen-containing inorganic compound includes O2. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:2.5 to 1:8, or 1:3 to 1:5. This can improve the hydrophilicity and anti-fogging properties of the film layer, and may even increase the light transmittance of the substrate.

[0016] In some embodiments, the silicon-containing inorganic compound includes Si₂H₆, and the oxygen-containing inorganic compound includes N₂O. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:8 to 1:20, or 1:9 to 1:14. This can contribute to excellent hydrophilicity and anti-fogging properties of the film layer, and may even improve the light transmittance of the substrate.

[0017] In some embodiments, the silicon-containing inorganic compound includes Si₂H₆, and the oxygen-containing inorganic compound includes O₂. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:5 to 1:16, or 1:6 to 1:10. This can improve the hydrophilicity and anti-fogging properties of the film layer, and may even increase the light transmittance of the substrate.

[0018] In some embodiments, when the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, an inert gas is also introduced into the chamber. This can help generate plasma or the like containing the inert gas.

[0019] In some embodiments, an inert gas and / or the oxygen-containing inorganic compound gas or vapor is introduced into the chamber before the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber. This facilitates pre-activation of the surface of the substrate, etc.

[0020] In some embodiments, a bias power supply is activated when the inert gas and / or the oxygen-containing inorganic compound gas or vapor is introduced into the chamber. This helps to control the bombardment energy of the plasma.

[0021] In some embodiments, the inert gas includes argon or helium. This allows for the use of inert gases that are low in cost and readily available.

[0022] In some embodiments, the temperature within the chamber is in the range of room temperature to 100°C, and the pressure is in the range of 1 Pa to 20 Pa. This facilitates the preparation of the film at relatively low temperatures and pressures, resulting in lower costs.

[0023] Another aspect of this application relates to a product comprising a film layer prepared by the method for preparing a film layer on the surface of a substrate as described in this application.

[0024] The embodiments of this application can help to achieve relatively stable film performance, simple preparation process, large-scale application in industrial production, and minimal reduction or improvement of the optical performance of the substrate while the film is hydrophilic.

[0025] In some embodiments, the water contact angle of the membrane is less than 90°, 50°, or 10°, or below 5°. This helps the product to be suitable for applications requiring a specific water contact angle and hydrophilicity.

[0026] In some embodiments, the film layer does not fog at a distance of 5 cm to 10 cm from hot water in the temperature range of 60°C to 90°C. This makes the product suitable for applications requiring anti-fogging performance.

[0027] In some embodiments, the membrane layer does not fog up within a distance of 5 cm to 10 cm in hot water at a temperature range of 60°C to 90°C after immersion in water for more than 24 or 72 hours. This helps the product to be suitable for scenarios requiring water resistance and anti-fogging performance.

[0028] In some embodiments, the membrane layer does not fog up within a distance of 5 cm to 10 cm from hot water at a temperature range of 60°C to 90°C after being placed in a room temperature environment for more than 6 months or after 1 year. This makes the product suitable for scenarios requiring anti-fogging durability.

[0029] In some embodiments, the film layer reduces the light transmittance of the substrate by less than 0.2%, or increases the light transmittance of the substrate. This helps the product to be suitable for applications requiring high light transmittance.

[0030] In some embodiments, the substrate is made of glass, ceramic, plastic, and / or polymer. This can result in more stable film properties on the surface of the glass, ceramic, plastic, and / or polymer, a simpler preparation process, large-scale application in industrial production, and the film's hydrophilicity minimizing or even enhancing the optical properties of the substrate.

[0031] In some embodiments, the substrate includes optical elements. This can contribute to the stability of the film layer on the surface of the optical element, simplify the fabrication process, enable large-scale industrial applications, and minimize or even enhance the optical performance of the substrate while maintaining the film's hydrophilicity.

[0032] In some embodiments, the product includes one or more of the following: goggles, laser protective goggles, telescopes, camera lenses, observation windows of mechanical devices, sports diving masks, bathroom glass, chemical and / or biological protective masks, vehicle windshields and / or rearview mirrors, bomb disposal protective equipment, helmets, solar panels, observation windows of measuring instruments, glass covers, glass walls of greenhouses, and architectural glass. This allows for the surface film layer of one or more of the following to exhibit relatively stable performance, a simple preparation process, and large-scale application in industrial production. Furthermore, the film layer is hydrophilic while minimizing or enhancing the optical properties of the substrate.

[0033] Where technical conditions permit, the technical features and feature combinations of the embodiments described in this application may also exist individually or in combination in other ways not described. Embodiments corresponding to other technical features or feature combinations not described in this application, which can be obtained by those skilled in the art based on the technical features and feature combinations of the embodiments described in this application without creative effort, should be considered as included and disclosed in this application. Attached Figure Description

[0034] Figure 1 This is a graph showing the transmittance data of light in the wavelength range of 300 nm to 800 nm before and after the deposition of a film on a glass substrate, as measured by a UV-Vis spectrophotometer in Experiment Example 1.

[0035] Figure 2 The surface morphology image of the film obtained by scanning electron microscopy (SEM) in Experimental Example 1; and

[0036] Figure 3 This is a photo taken during the anti-fog test in Experiment Example 1. Detailed Implementation

[0037] Unless otherwise stated, all terms used to disclose this invention (including, but not limited to, technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The description below is primarily for illustrative purposes and is not intended to unduly limit the scope of this invention.

[0038] Unless otherwise specified, the phrase "in some embodiments" and similar terms in this application indicate that at least one embodiment of this application includes the technical features and technical solutions described after "in some embodiments" and similar terms. That is, while one embodiment includes a certain technical feature or technical solution, one or more other embodiments may include that technical feature or technical solution, or may not include that technical feature or technical solution.

[0039] Unless otherwise specified, the terms “having,” “comprising,” and “including,” and similar expressions used in this application are inclusive or open-ended and do not exclude additional, uncited substances, components, steps, properties, elements, devices, products, shapes, structures, features, etc.

[0040] One aspect of this application relates to a method for preparing a film layer on the surface of a substrate, comprising: placing the substrate within a chamber; introducing a silicon-containing inorganic compound gas or vapor and an oxygen-containing inorganic compound gas or vapor into the chamber; and activating a plasma source to deposit the film layer on the surface of the substrate under plasma discharge conditions.

[0041] The embodiments of this application can help to make the film layer more stable in performance, the preparation process is relatively simple, and it can be used on a large scale in industrial production. While the film layer is hydrophilic, it has little effect on the optical performance of the substrate or even improves the optical performance of the substrate.

[0042] For example, the embodiments of this application use gaseous silicon-containing inorganic compounds and oxygen-containing inorganic compounds, and do not involve liquid treatment methods using solvents to form the film layer, thus avoiding the problem of film layer instability caused by solvent residue. Furthermore, the embodiments of this application deposit the film layer under plasma discharge conditions, without involving layer-by-layer self-assembly, stencils, ultraviolet excitation, etc., making the preparation process relatively simple and easy to apply on a large scale in industrial production. Moreover, as shown in the experimental examples below, the embodiments of this application can better balance hydrophilicity and optical properties, achieving hydrophilicity of the surface while minimizing or even improving optical properties such as light transmittance of the substrate.

[0043] The method for preparing a film layer on the surface of a substrate according to the embodiments of this application may achieve a hydrophilic effect on the substrate surface because, based on plasma-enhanced chemical vapor deposition technology, a SiO2 film layer with a hydrophilic network structure rich in Si-OH is generated.

[0044] The chamber can be made of stainless steel or other corrosion-resistant materials for stable and long-term use. The chamber can be used to contain the substrate. The chamber may include a substrate carrier for placing the substrate, which may employ a rotating or movable frame / platform structure. The substrate carrier can be adjusted according to the different sizes and shapes of the substrate to ensure uniform deposition of the film layer on the substrate.

[0045] The plasma source can be used to excite the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor to generate plasma. It can use a radio frequency (RF) power supply to generate high-density plasma through inductively coupled plasma (ICP) to promote the reaction between the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor.

[0046] Other optional discharge methods for the plasma source may include: electrodeless discharge, single-electrode discharge, dual-electrode discharge, and multi-electrode discharge. Electrodeless discharge may include microwave discharge, etc. Single-electrode discharge may include corona discharge, plasma jets formed by unipolar discharge, etc. Dual-electrode discharge may include dielectric barrier discharge, radio frequency glow discharge with exposed electrodes, etc. Multi-electrode discharge may include discharge using a floating electrode as a third electrode, etc.

[0047] The plasma reaction of the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor, and the deposition of the film layer, are carried out in the chamber. The silicon-containing inorganic compound may contain one or both of hydrogen and chlorine. In some embodiments, the silicon-containing inorganic compound includes SiH4, Si2H6, and Si4H 10 One or more of the following: SiH(SiH3)3, SiCl4, SiHCl3, SiH3Cl, SiH2Cl2, SiHCl3, and Si2Cl6. This allows for the use of silicon-containing inorganic compounds with relatively simple structures, lower costs, and / or the ability to be presented in a gaseous or vaporous state at a lower cost during film preparation.

[0048] The oxygen-containing inorganic compound may contain nitrogen or hydrogen. In some embodiments, the oxygen-containing inorganic compound includes one or more of N2O, O2, O3, and H2O. This can help to make the oxygen-containing inorganic compound have a simpler structure, lower cost, and / or allow it to be presented in a gaseous or vaporous state at a lower cost during the preparation of the film.

[0049] The silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor can be delivered to the chamber via a gas delivery system. The gas delivery system may include a flow meter, a gas mixer, and control valves to ensure stable delivery and flow control of the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor.

[0050] The flow rates of the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor can be adjusted according to the volume of the chamber. Referring to the experimental examples below, unexpectedly, when the silicon unit flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is within a certain range, the film exhibits excellent hydrophilicity and anti-fogging properties, and can even improve the light transmittance of the substrate. In some embodiments, when the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the silicon unit flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:2.5 to 1:10, where the silicon unit flow rate ratio is the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor corresponding to one silicon atom in the chemical formula of the silicon-containing inorganic compound. This can result in excellent hydrophilicity and anti-fogging properties of the film layer, and may even improve the light transmittance of the substrate.

[0051] For example, referring to the experimental examples below, unexpectedly, when the flow ratio of the silicon-containing inorganic compound gas or vapor to the silicon unit of the oxygen-containing inorganic compound gas or vapor is in the range of 1:2.5 to 1:10, the static water contact angle of the membrane layer is less than or equal to 5°, which can be considered a superhydrophilic membrane layer. The membrane layer can prevent fogging and avoid interference from water droplets on, for example, optical elements. Possible reasons include that water droplets can spread rapidly after contacting the surface of the membrane layer, forming a continuous water film, which significantly inhibits the formation and scattering of fog droplets. At the same time, the membrane layer does not reduce the light transmittance, visibility, and mirror imaging effect of the substrate, and may even improve the light transmittance of the substrate, exhibiting excellent light transmission performance. In addition, the superhydrophilic anti-fog membrane layer has excellent durability and water resistance.

[0052] The silicon unit flow ratio can be between 1:2.5 and 1:10, 1:4 and 1:10, 1:4.5 and 1:7, 1:2.5 and 1:8, 1:3 and 1:5, or any two of the aforementioned ratios. Specifically, the silicon unit flow ratio can be any other ratio within the range of 1:7, 1:4.5, 1:5, 1:3, or 1:2.5 and 1:10.

[0053] The silicon unit flow rate can vary depending on the oxygen-containing inorganic compound. For example, N2O and O2 can correspond to different ranges of silicon unit flow rates. In some embodiments, the oxygen-containing inorganic compound includes N2O. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the silicon unit flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:4 to 1:10, or 1:4.5 to 1:7. The silicon unit flow rate ratio is the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor corresponding to one silicon atom in the chemical formula of the silicon-containing inorganic compound. This can help the film layer to have good hydrophilicity and anti-fogging properties, and may even improve the light transmittance of the substrate. When the oxygen-containing inorganic compound includes N2O, the silicon unit flow rate can be between 1:4 and 1:10, 1:4.5 and 1:7, or any two of the aforementioned ratios. Specifically, the silicon unit flow rate can be any other ratio within the range of 1:7, 1:4.5, 1:4 to 1:10, or 1:4.5 to 1:7.

[0054] In some embodiments, the oxygen-containing inorganic compound includes O2. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the silicon unit flow ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:2.5 to 1:8, or 1:3 to 1:5. The silicon unit flow ratio is the flow ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor corresponding to one silicon atom in the chemical formula of the silicon-containing inorganic compound. This can improve the hydrophilicity and anti-fogging properties of the film layer, and even enhance the light transmittance of the substrate. When the oxygen-containing inorganic compound includes O2, the silicon unit flow ratio can be in the range of 1:2.5 to 1:8, 1:3 to 1:5, or any two of the aforementioned ratios. Specifically, the silicon unit flow ratio can be any other ratio within the range of 1:5, 1:3, or 1:2.5 to 1:8, or 1:3 to 1:5.

[0055] The flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor can be increased or decreased depending on the number of silicon atoms in the chemical formula of the silicon-containing inorganic compound. For example, when the number of silicon atoms in the chemical formula of the silicon-containing inorganic compound is n (n not equal to 0), the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is one-nth of the silicon unit flow rate ratio. Specifically, when the chemical formula of the silicon-containing inorganic compound contains one silicon atom, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor can be the silicon unit flow rate ratio. For example, when the silicon-containing inorganic compound includes one or more of SiH4, SiCl4, SiHCl3, SiH3Cl, SiH2Cl2, and SiHCl3, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor can be the silicon unit flow rate ratio. In some embodiments, the silicon-containing inorganic compound includes SiH4, and the oxygen-containing inorganic compound includes N2O. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:4 to 1:10, or 1:4.5 to 1:7. This can contribute to excellent hydrophilicity and anti-fogging properties of the film layer, and may even improve the light transmittance of the substrate. For example, the silicon-containing inorganic compound includes SiH4, and the oxygen-containing inorganic compound includes N2O. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is within the range of 1:4 to 1:10, 1:4.5 to 1:7, or any two of the aforementioned ratios. It can be any other ratio within the range of 1:7, 1:4.5, 1:4 to 1:10, or 1:4.5 to 1:7.

[0056] In some embodiments, the silicon-containing inorganic compound includes SiH4, and the oxygen-containing inorganic compound includes O2. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:2.5 to 1:8, or 1:3 to 1:5. This can improve the hydrophilicity and anti-fogging properties of the film layer, and may even increase the light transmittance of the substrate. For example, the silicon-containing inorganic compound includes SiH4, and the oxygen-containing inorganic compound includes O2. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is within the range of 1:2.5 to 1:8, 1:3 to 1:5, or any two of the aforementioned ratios. For example, it can be any other ratio within the range of 1:5, 1:3, 1:2.5 to 1:8, or 1:3 to 1:5.

[0057] When the chemical formula of the silicon-containing inorganic compound contains two silicon atoms, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor can be half the flow rate ratio of the silicon unit. For example, when the silicon-containing inorganic compound includes one or both of Si₂H₆ and Si₂Cl₆, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor can be half the flow rate ratio of the silicon unit. In some embodiments, the silicon-containing inorganic compound includes Si₂H₆, and the oxygen-containing inorganic compound includes N₂O. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:8 to 1:20, or 1:9 to 1:14. This can help the film layer to have good hydrophilicity and anti-fogging properties, and may even improve the light transmittance of the substrate. For example, the silicon-containing inorganic compound includes Si2H6, and the oxygen-containing inorganic compound includes N2O. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is within the range of 1:8 to 1:20, 1:9 to 1:14, or any two of the aforementioned ratios. It can be any other ratio within the range of 1:14, 1:8 to 1:20, or 1:9 to 1:14.

[0058] In some embodiments, the silicon-containing inorganic compound includes Si₂H₆, and the oxygen-containing inorganic compound includes O₂. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:5 to 1:16, or 1:6 to 1:10. This can improve the hydrophilicity and anti-fogging properties of the film layer, and may even increase the light transmittance of the substrate. For example, the silicon-containing inorganic compound includes Si2H6, and the oxygen-containing inorganic compound includes O2. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is within the range of 1:5 to 1:16, 1:6 to 1:10, or any two of the aforementioned ratios. For example, it can be any other ratio within the range of 1:5, 1:16, 1:5 to 1:16, 1:6, 1:10, or 1:6 to 1:10.

[0059] When the chemical formula of the silicon-containing inorganic compound contains three silicon atoms, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor can be one-third of the flow rate ratio of the silicon unit. When the chemical formula of the silicon-containing inorganic compound contains four silicon atoms, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor can be one-quarter of the flow rate ratio of the silicon unit. For example, the silicon-containing inorganic compound includes Si4H. 10 When one or two of the following are used, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor can be one-quarter of the flow rate ratio of the silicon unit. And so on, and so forth.

[0060] In some embodiments, when the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, an inert gas is also introduced into the chamber. This can help generate plasma or the like containing the inert gas.

[0061] In some embodiments, an inert gas and / or the oxygen-containing inorganic compound gas or vapor is introduced into the chamber before the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber. This facilitates pre-activation of the surface of the substrate, etc.

[0062] In some embodiments, a bias power supply is activated when the inert gas and / or the oxygen-containing inorganic compound gas or vapor is introduced into the chamber. This helps to control the bombardment energy of the plasma. The bias power supply can be connected to the substrate carrier to provide a ground bias. The bias power supply can be a radio frequency (RF) or medium frequency (MF) power supply to control the plasma energy.

[0063] In some embodiments, the inert gas includes argon or helium. This allows for the use of inert gases that are low in cost and readily available.

[0064] In some embodiments, the temperature within the chamber is in the range of room temperature to 100°C, and the gas pressure is in the range of 1 Pa to 20 Pa. This facilitates the fabrication of the film at relatively low temperatures and pressures, reduces costs, avoids damage to the heat-sensitive substrate, and ensures that gas or vapor molecules are not disturbed by air molecules during the reaction. The temperature within the chamber can be regulated by a temperature control system. The temperature control system may include a heater and a cooler, and the temperature of the chamber can be monitored in real time by sensors. A vacuum system can maintain a low-pressure environment within the chamber, ensuring that gas molecules are not disturbed by air molecules during the reaction. The vacuum system can control the gas pressure within the chamber using a vacuum pump and a pressure sensor, ensuring that the required low-pressure conditions are maintained during the deposition of the film.

[0065] Another aspect of this application relates to a product comprising a film layer prepared by the method for preparing a film layer on the surface of a substrate as described in this application.

[0066] The embodiments of this application can help to achieve relatively stable film performance, simple preparation process, large-scale application in industrial production, and minimal reduction or improvement of the optical performance of the substrate while the film is hydrophilic.

[0067] In some embodiments, the water contact angle of the membrane is less than 90°, 50°, or 10°, or below 5°. This helps the product to be suitable for applications requiring a specific water contact angle and hydrophilicity.

[0068] Unless otherwise specified, the terms "below," "within," "above," or similar expressions following numerical values ​​in this application indicate that the numerical value preceding the term is included within the range. For example, "below 5°" can mean ≤5°, "within 0.2%" can mean ≤0.2%, "above 0.4%" can mean ≥0.4%, "above 0.6%" can mean ≥0.6%, and so on. For instance, the water contact angle of the membrane layer can be less than 90°, 50°, or 10°, or any value below 5°, such as 3°, 4°, 5°, 30°, or 48°.

[0069] In some embodiments, the film layer does not fog at a distance of 5 cm to 10 cm from hot water in the temperature range of 60°C to 90°C. This makes the product suitable for applications requiring anti-fogging performance.

[0070] In some embodiments, the membrane layer does not fog up within a distance of 5 cm to 10 cm in hot water at a temperature range of 60°C to 90°C after immersion in water for more than 24 or 72 hours. This helps the product to be suitable for scenarios requiring water resistance and anti-fogging performance.

[0071] In some embodiments, the membrane layer does not fog up within a distance of 5 cm to 10 cm from hot water at a temperature range of 60°C to 90°C after being placed in a room temperature environment for more than 6 months or after 1 year. This makes the product suitable for scenarios requiring anti-fogging durability.

[0072] In some embodiments, the reduction in light transmittance of the substrate by the film layer is within 0.2%, or the increase in light transmittance of the substrate is achieved. This helps the product to be suitable for scenarios requiring high light transmittance. In this application, the light transmittance of the product, film layer, and substrate can refer to the maximum transmittance of light in the visible light band (380 nm~780 nm) in the product, film layer, and substrate. When the light transmittance of the substrate with the film layer is lower than the light transmittance of the substrate before the film layer is formed, the film layer can be said to reduce the light transmittance of the substrate. Conversely, when the light transmittance of the substrate with the film layer is higher than the light transmittance of the substrate before the film layer is formed, the film layer can be said to increase the light transmittance of the substrate. Similarly, when the light transmittance of the substrate with the film layer is equal to the light transmittance of the substrate before the film layer is formed, the film layer has no effect on the light transmittance of the substrate, resulting in a 0% reduction or 0% increase.

[0073] In some embodiments, the substrate is made of glass, ceramic, plastic, and / or polymer. This can result in more stable film properties on the surface of the glass, ceramic, plastic, and / or polymer, a simpler preparation process, large-scale application in industrial production, and the film being hydrophilic while minimizing or enhancing the optical properties of the substrate. The polymer may include resin.

[0074] In some embodiments, the substrate includes optical elements. This can contribute to the stability of the film layer on the surface of the optical element, simplify the fabrication process, enable large-scale industrial applications, and minimize or even enhance the optical performance of the substrate while maintaining the film's hydrophilicity.

[0075] In some embodiments, the product includes one or more of the following: goggles, laser protective goggles, telescopes, camera lenses, observation windows of mechanical devices, sports diving masks, bathroom glass, chemical and / or biological protective masks, vehicle windshields and / or rearview mirrors, bomb disposal protective equipment, helmets, solar panels, observation windows of measuring instruments, glass covers, glass walls of greenhouses, and architectural glass. This allows for the surface film layer of one or more of the following to exhibit relatively stable performance, a simple preparation process, and large-scale application in industrial production. Furthermore, the film layer is hydrophilic while minimizing or enhancing the optical properties of the substrate.

[0076] The operation flow of the method for preparing a film layer on the surface of a substrate according to embodiments of the present invention may include the following steps:

[0077] (1) Detergent / ultrasonic cleaning (optional)

[0078] Prepare a clean substrate free of oil, dirt, or other impurities, such as optical components made of glass, ceramics, plastics, and / or polymers, including goggles, laser safety goggles, telescopes, camera lenses, observation windows of mechanical devices, sports diving masks, bathroom glass, chemical and / or biological protective masks, vehicle windshields and / or rearview mirrors, bomb disposal protective equipment, helmets, solar panels, observation windows of measuring instruments, glass covers, greenhouse glass walls, and one or more types of architectural glass. Perform surface pretreatment on the substrate, such as cleaning with detergents (deionized water, ethanol, isopropanol, etc.) and / or ultrasonic cleaning, to remove surface dirt and oxides, improving the adhesion of the subsequently formed film.

[0079] (2) Chamber preheating and vacuum extraction (optional)

[0080] Place the substrate inside the chamber. Activate the vacuum system to evacuate the air from the chamber and create a vacuum to the required pressure, for example, ≤1×10⁻⁶. -2 Pa. Activate the temperature control system to heat the chamber to the required operating temperature, such as within the range of room temperature to 100°C, to help provide a low-temperature environment for film deposition.

[0081] (3) Plasma cleaning (optional)

[0082] Introducing the reaction gas: Argon (Ar), a mixture of Ar and nitrous oxide (N2O), or a mixture of Ar and oxygen (O2) is introduced. The flow rate can be adjusted according to the size of the chamber. For example, for a 400L chamber, the flow rate can be in the range of 50 sccm - 500 sccm. The internal pressure is controlled by adjusting the opening of the vacuum valve, for example, in the range of 1 Pa - 20 Pa.

[0083] Plasma excitation: The radio frequency plasma source is activated to excite the reactive gas (argon (Ar) or a mixture of argon (Ar) and nitrous oxide (N2O) or a mixture of argon (Ar) and oxygen (O2)) to form plasma. A 13.56 MHz or lower radio frequency source can be used to generate plasma via inductively coupled plasma (ICP). The power of the plasma source can be adjusted according to the gas type, flow rate, and substrate type, and can be in the range of 100 W to 1000 W.

[0084] Start-up bias (optional): The start-up bias power supply provides a certain bias voltage to the substrate carrier, which can help control the bombardment energy of the plasma. An intermediate frequency source of 350kHz or lower, or an radio frequency source of 2MHz or lower can be used to provide an average bias voltage in the range of -300V to -50V.

[0085] The substrate can be rotated or moved during plasma cleaning to ensure uniform plasma cleaning. The duration of plasma cleaning can range from 30s to 1800s.

[0086] (4) Film deposition

[0087] Introducing the reaction gas: The gas flow rate can be adjusted according to the chamber size. For example, for a 400L chamber, the flow rate of silane (SiH4) can be in the range of 1 sccm - 100 sccm, the flow rate of nitrous oxide (N2O) or oxygen (O2) can be in the range of 5 sccm - 500 sccm, and the flow rate of argon (Ar) can be in the range of 50 sccm - 500 sccm. By controlling the opening of the vacuum valve, the gas pressure inside the chamber can be controlled, for example, in the range of 1 Pa - 20 Pa, and the temperature of the chamber can be controlled, for example, in the range of room temperature - 100°C, to help provide a low-pressure, low-temperature environment.

[0088] Plasma excitation: The radio frequency plasma source is activated to excite the reactive gas to form plasma. A 13.56MHz or lower radio frequency source can be used to generate plasma via inductive coupling (ICP). The power of the plasma source can be adjusted according to the gas type, flow rate, and substrate type, and can be in the range of 100 W to 1000 W.

[0089] Start-up bias (optional): The start-up bias power supply provides a certain bias voltage to the substrate carrier, which can help control the bombardment energy of the plasma. An intermediate frequency source of 350 kHz or lower, or an radio frequency source of 2 MHz or lower can be used to provide an average bias voltage in the range of -300 V to -50 V.

[0090] A film is deposited on the surface of a substrate under plasma discharge conditions. The substrate can be rotated or moved during the deposition process to ensure uniform film coverage. The film deposition time can be adjusted according to the size of the substrate and the required film thickness, ranging from 5 seconds to 3600 seconds.

[0091] (5) Cooling and removal (optional)

[0092] After deposition is complete, the plasma source, bias power supply, and gas delivery system are shut off, and gas flow is stopped. The temperature inside the chamber gradually decreases to room temperature. Gas (clean compressed air or inert gas) is introduced into the chamber to restore atmospheric pressure, the plasma chamber is opened, and the substrate with the deposited film is removed.

[0093] (6) Membrane quality testing and evaluation (optional)

[0094] Thickness, hydrophilicity, and surface structure of the film can be measured using equipment such as a film thickness gauge / elliptic polarization spectrometer, contact angle meter, and scanning electron microscope (SEM).

[0095] Evaluation of the anti-fogging effect of the film layer: The anti-fogging performance, water immersion performance, and durability performance of the film layer can be verified through anti-fogging tests, water immersion tests, and durability tests. In the anti-fogging test, the substrate with the film layer is placed within a distance of 5 cm to 10 cm above a beaker containing hot water at a temperature range of 60℃ to 90℃, and the fogging on the substrate surface is observed. In the water immersion test, the substrate with the film layer is immersed in deionized water for a period of time, then removed and dried, and the anti-fogging test is performed. The fogging on the substrate surface is observed, and the time of anti-fogging failure is recorded. In the durability test, the substrate with the film layer is placed in a room temperature environment for a period of time, and the anti-fogging test is performed to test the time of anti-fogging failure of the film layer.

[0096] Test transmittance: The transmittance of the substrate in the visible light band before and after the deposition of the film layer can be detected using equipment such as a UV-Vis spectrophotometer to evaluate the effect of the film layer on the transmittance of the substrate.

[0097] The following experimental examples are intended to help understand the embodiments of the present invention and are not intended to be used as unnecessary limitations on the claims.

[0098] Experimental Example

[0099] Unless otherwise specified, all reagents and equipment used in the following experiments are commercially available products purchased through commercial channels.

[0100] Experimental Example 1: Silane (SiH4): Nitrous oxide (N2O) = 1:7

[0101] (1) Detergent / Ultrasonic cleaning

[0102] The glass substrate is ultrasonically cleaned by immersing it in a cleaning agent (ethanol), then ultrasonically rinsed by immersion in deionized water, and finally dried with hot air at a temperature between room temperature and 60°C.

[0103] (2) Chamber preheating and vacuum extraction

[0104] The dried glass substrate is placed on a rotating rack within the 400L chamber of the coating equipment. The vacuum system is activated to extract air from the chamber and evacuate it to a vacuum level of 10. -2 Pa. Activate the temperature control system to heat the chamber to 50°C.

[0105] (3) Plasma cleaning

[0106] Maintaining the vacuum level in the chamber at approximately 60 mTorr, argon gas (Ar) was introduced into the chamber at a flow rate of 200 sccm. The ICP RF power supply was then activated for plasma discharge, and the pulse bias power supply was started for 5 minutes. During this time, the parameters for the ICP RF power supply plasma discharge were: frequency 13.56 MHz, power 600 W; and the parameters for the pulse bias power supply were: frequency 250 kHz, duty cycle 90%, and bias voltage -300 V. Next, argon gas (Ar) and nitrous oxide (N2O) were introduced into the chamber at a flow rate of 100 sccm. The ICP RF power supply was then activated for plasma discharge, and the pulse bias power supply was started for 5 minutes. During this time, the parameters for the ICP RF power supply plasma discharge were: frequency 13.56 MHz, power 600 W; and the parameters for the pulse bias power supply were: frequency 250 kHz, duty cycle 90%, and bias voltage -300 V.

[0107] (4) Film deposition

[0108] Siloam (SiH4) was introduced into the chamber at a flow rate of 20 sccm, nitrous oxide (N2O) was introduced into the chamber at a flow rate of 140 sccm, and argon (Ar) was introduced into the chamber at a flow rate of 150 sccm. The ICP radio frequency power supply was turned on for plasma discharge to perform coating. The parameters of the ICP radio frequency power supply plasma discharge included: frequency 13.56 MHz, power 800 W, maintaining a chamber vacuum of 40 mTorr and a temperature of 50℃ during the coating process, and a coating time of 5 minutes.

[0109] (5) Cooling and removal

[0110] After deposition is complete, the plasma source and gas delivery system are shut off, and gas flow is stopped. The temperature inside the chamber is gradually reduced to room temperature. Gas is introduced into the chamber until the pressure returns to normal, the chamber is opened, and the glass substrate with the film deposited on its surface is removed.

[0111] (6) Membrane quality testing and evaluation

[0112] The film thickness and water contact angle of the glass substrate with the film layer were tested using a film thickness gauge / elliptic polarization spectrometer and a contact angle meter. The measured film thickness and water contact angle are listed in the data table.

[0113] The anti-fogging performance, water immersion performance, and durability performance measured by anti-fogging test, water immersion test, and durability test are listed in the data table.

[0114] The transmittance data of light in the wavelength range of 300 nm to 800 nm before and after the deposition of a film on a glass substrate, measured using a UV-Vis spectrophotometer, are shown below. Figure 1 Data table. (From) Figure 1As can be seen from the data table, the glass substrate with a film layer after coating ( Figure 1 Coated glass (in the middle) compared to blank glass substrate without a coating before coating ( Figure 1 The maximum transmittance of the blank glass in the visible light band (380 nm~780 nm) was improved from 91.8% to 93.5%.

[0115] The surface morphology images of the film obtained by scanning electron microscopy (SEM) are shown below. Figure 2 See also Figure 2 The film surface has a nanoscale micro-rough structure, in which the size of the rough unit is <50nm.

[0116] In the anti-fogging test, both coated and uncoated glass substrates were placed 5-10 cm above hot water at a temperature between 60℃ and 90℃. Fogging was observed and photographed. The photos are shown below. Figure 3 .from Figure 3 As can be seen, the uncoated glass substrate surface shown in the lower half of the image is clearly fogged, while the coated glass substrate surface shown in the upper half of the image is not fogged, indicating that the anti-fog performance of the coating is excellent.

[0117] Experimental Example 2: Silane (SiH4): Nitrous oxide (N2O) = 1:4.5

[0118] (1) Detergent / Ultrasonic cleaning

[0119] The glass substrate is ultrasonically cleaned by immersing it in a cleaning agent (ethanol), then ultrasonically rinsed by immersion in deionized water, and finally dried with hot air at a temperature between room temperature and 60°C.

[0120] (2) Chamber preheating and vacuum extraction

[0121] The dried glass substrate is placed on a rotating rack within the 400L chamber of the coating equipment. The vacuum system is activated to extract air from the chamber and evacuate it to a vacuum level of 10. -2 Pa. Activate the temperature control system to heat the chamber to 50°C.

[0122] (3) Plasma cleaning

[0123] Maintaining the vacuum level in the chamber at approximately 60 mTorr, argon gas (Ar) was introduced into the chamber at a flow rate of 200 sccm. The ICP RF power supply was then activated for plasma discharge, and the pulse bias power supply was started for 5 minutes. During this time, the parameters for the ICP RF power supply plasma discharge were: frequency 13.56 MHz, power 600 W; and the parameters for the pulse bias power supply were: frequency 250 kHz, duty cycle 90%, and bias voltage -300 V. Next, argon gas (Ar) and nitrous oxide (N2O) were introduced into the chamber at a flow rate of 100 sccm. The ICP RF power supply was then activated for plasma discharge, and the pulse bias power supply was started for 5 minutes. During this time, the parameters for the ICP RF power supply plasma discharge were: frequency 13.56 MHz, power 600 W; and the parameters for the pulse bias power supply were: frequency 250 kHz, duty cycle 90%, and bias voltage -300 V.

[0124] (4) Film deposition

[0125] Siloam (SiH4) was introduced into the chamber at a flow rate of 20 sccm, nitrous oxide (N2O) was introduced into the chamber at a flow rate of 90 sccm, and argon (Ar) was introduced into the chamber at a flow rate of 150 sccm. The ICP radio frequency power supply was turned on to perform plasma discharge for coating. The parameters of the ICP radio frequency power supply plasma discharge included: frequency 13.56 MHz, power 800 W, maintaining a chamber vacuum of 40 mTorr and a temperature of 50℃ during the coating process, and a coating time of 9 minutes, thus depositing a film layer on the surface of the glass substrate.

[0126] (5) Cooling and removal

[0127] After deposition is complete, the plasma source and gas delivery system are shut off, and gas flow is stopped. The temperature inside the chamber is gradually reduced to room temperature. Gas is introduced into the chamber to restore atmospheric pressure, the chamber is opened, and the glass substrate with the deposited film is removed.

[0128] (6) Membrane quality testing and evaluation

[0129] The film thickness and water contact angle of the glass substrate with the film layer were tested using a film thickness gauge / elliptic polarization spectrometer and a contact angle meter. The measured film thickness and water contact angle are listed in the data table.

[0130] The anti-fogging performance, water immersion performance, and durability performance measured by anti-fogging test, water immersion test, and durability test are listed in the data table.

[0131] The transmittance data of the glass substrate after the deposited film, measured using a UV-Vis spectrophotometer, in the visible light band is listed in the data table.

[0132] Experimental Example 3: Silane (SiH4): Oxygen (O2) = 1:5

[0133] (1) Cleaning agent / ultrasonic cleaning: The glass substrate is immersed in the cleaning agent (isopropanol) for ultrasonic cleaning, then immersed in deionized water for ultrasonic rinsing, and then the surface of the glass substrate is dried with hot air at a temperature between room temperature and 60°C.

[0134] (2) Chamber preheating and vacuum extraction: Place the dried glass substrate on the rotating rack inside the 400L chamber of the coating equipment, start the vacuum system, extract the air from the chamber, and evacuate the chamber to 10°C. -2 Pa. Activate the temperature control system to heat the chamber to 50°C.

[0135] (3) Plasma cleaning: Maintain the vacuum level of the chamber at approximately 60 mTorr, introduce argon (Ar) gas into the chamber at a flow rate of 200 sccm, turn on the ICP RF power supply for plasma discharge, and start the pulse bias power supply for 5 minutes. During this period, the parameters of the ICP RF power supply plasma discharge include: frequency 13.56 MHz, power 600 W, and the parameters of the pulse bias power supply include: frequency 250 kHz, duty cycle 90%, and bias voltage -300 V. Then, introduce argon (Ar) gas into the chamber at a flow rate of 100 sccm, and introduce oxygen (O2) gas into the chamber at a flow rate of 100 sccm, turn on the ICP RF power supply for plasma discharge, and start the pulse bias power supply for 5 minutes. During this period, the parameters of the ICP RF power supply plasma discharge include: frequency 13.56 MHz, power 600 W, and the parameters of the pulse bias power supply include: frequency 250 kHz, duty cycle 90%, and bias voltage -300 V.

[0136] (4) Film deposition: SiH4 is introduced into the chamber at a flow rate of 30 sccm, oxygen (O2) is introduced into the chamber at a flow rate of 150 sccm, and argon (Ar) is introduced into the chamber at a flow rate of 150 sccm. The ICP radio frequency power supply is turned on to perform plasma discharge for film deposition. The parameters of the ICP radio frequency power supply plasma discharge include: frequency 13.56 MHz, power 800 W, maintaining the chamber vacuum degree of 40 mTorr and temperature of 50℃ during the film deposition process, and the film deposition time is 3 minutes to deposit a film on the glass substrate surface.

[0137] (5) Cooling and removal

[0138] After deposition is complete, the plasma source and gas delivery system are shut off, and gas flow is stopped. The temperature inside the chamber is gradually reduced to room temperature. Gas is introduced into the chamber to restore atmospheric pressure, the chamber is opened, and the glass substrate with the deposited film is removed.

[0139] (6) Membrane quality testing and evaluation

[0140] The film thickness and water contact angle of the glass substrate with the film layer were tested using a film thickness gauge / elliptic polarization spectrometer and a contact angle meter. The measured film thickness and water contact angle are listed in the data table.

[0141] The anti-fogging performance, water immersion performance, and durability performance measured by anti-fogging test, water immersion test, and durability test are listed in the data table.

[0142] The transmittance data of the glass substrate after the deposited film, measured using a UV-Vis spectrophotometer, in the visible light band is listed in the data table.

[0143] Experimental Example 4: Silane (SiH4): Oxygen (O2) = 1:3

[0144] (1) Detergent / Ultrasonic cleaning

[0145] The glass substrate is ultrasonically cleaned by immersing it in a cleaning agent (isopropyl alcohol), then ultrasonically rinsed by immersion in deionized water, and finally dried with hot air at a temperature between room temperature and 60°C.

[0146] (2) Chamber preheating and vacuum extraction

[0147] The dried glass substrate is placed on a rotating rack within the 400L chamber of the coating equipment. The vacuum system is activated to extract air from the chamber and evacuate it to a vacuum level of 10. -2 Pa. Activate the temperature control system to heat the chamber to 50°C.

[0148] (3) Plasma cleaning

[0149] Maintaining the vacuum level in the chamber at approximately 60 mTorr, argon gas (Ar) was introduced into the chamber at a flow rate of 200 sccm. The ICP RF power supply was then activated for plasma discharge, and the pulse bias power supply was started for 5 minutes. During this time, the parameters for the ICP RF power supply plasma discharge were: frequency 13.56 MHz, power 600 W; and the parameters for the pulse bias power supply were: frequency 250 kHz, duty cycle 90%, and bias voltage -300 V. Next, argon gas (Ar) and oxygen gas (O2) were introduced into the chamber at a flow rate of 100 sccm. The ICP RF power supply plasma discharge was then activated, and the pulse bias power supply was started for 5 minutes. During this time, the parameters for the ICP RF power supply plasma discharge were: frequency 13.56 MHz, power 600 W; and the parameters for the pulse bias power supply were: frequency 250 kHz, duty cycle 90%, and bias voltage -300 V.

[0150] (4) Film deposition

[0151] Silicate (SiH4) was introduced into the chamber at a flow rate of 30 sccm, oxygen (O2) was introduced into the chamber at a flow rate of 90 sccm, and argon (Ar) was introduced into the chamber at a flow rate of 150 sccm. The ICP radio frequency power supply was turned on to perform plasma discharge for coating. The parameters of the ICP radio frequency power supply plasma discharge included: frequency 13.56 MHz, power 800 W, maintaining a chamber vacuum of 40 mTorr and a temperature of 50°C during the coating process, and a coating time of 5 minutes, thus depositing a film layer on the surface of the glass substrate.

[0152] (5) Cooling and removal

[0153] After deposition is complete, the plasma source and gas delivery system are shut off, and gas flow is stopped. The temperature inside the chamber is gradually reduced to room temperature. Gas is introduced into the chamber to restore atmospheric pressure, the chamber is opened, and the glass substrate with the deposited film is removed.

[0154] (6) Membrane quality testing and evaluation

[0155] The film thickness and water contact angle of the glass substrate with the film layer were tested using a film thickness gauge / elliptic polarization spectrometer and a contact angle meter. The measured film thickness and water contact angle are listed in the data table.

[0156] The anti-fogging performance, water immersion performance, and durability performance measured by anti-fogging test, water immersion test, and durability test are listed in the data table.

[0157] The transmittance data of the glass substrate after the deposited film, measured using a UV-Vis spectrophotometer, in the visible light band is listed in the data table.

[0158] Experimental Example 5: Silane (SiH4): Nitrous oxide (N2O) = 1:2

[0159] (1) Detergent / Ultrasonic cleaning

[0160] The glass substrate is ultrasonically cleaned by immersing it in a cleaning agent (ethanol), then ultrasonically rinsed by immersion in deionized water, and finally dried with hot air at a temperature between room temperature and 60°C.

[0161] (2) Chamber preheating and vacuum extraction

[0162] The dried glass substrate is placed on a rotating rack within the 400L chamber of the coating equipment. The vacuum system is activated to extract air from the chamber and evacuate it to a vacuum level of 10. -2 Pa. Activate the temperature control system to heat the chamber to 50°C.

[0163] (3) Plasma cleaning

[0164] Maintaining the vacuum level in the chamber at approximately 60 mTorr, argon gas (Ar) was introduced into the chamber at a flow rate of 200 sccm. The ICP RF power supply was then activated for plasma discharge, and the pulse bias power supply was started for 5 minutes. During this time, the parameters for the ICP RF power supply plasma discharge were: frequency 13.56 MHz, power 600 W; and the parameters for the pulse bias power supply were: frequency 250 kHz, duty cycle 90%, and bias voltage -300 V. Next, argon gas (Ar) and nitrous oxide (N2O) were introduced into the chamber at a flow rate of 100 sccm. The ICP RF power supply was then activated for plasma discharge, and the pulse bias power supply was started for 5 minutes. During this time, the parameters for the ICP RF power supply plasma discharge were: frequency 13.56 MHz, power 600 W; and the parameters for the pulse bias power supply were: frequency 250 kHz, duty cycle 90%, and bias voltage -300 V.

[0165] (4) Film deposition

[0166] Siloam (SiH4) was introduced into the chamber at a flow rate of 20 sccm, nitrous oxide (N2O) was introduced into the chamber at a flow rate of 40 sccm, and argon (Ar) was introduced into the chamber at a flow rate of 150 sccm. The ICP radio frequency power supply was turned on for plasma discharge to perform coating. The parameters of the ICP radio frequency power supply plasma discharge included: frequency 13.56 MHz, power 800 W, maintaining a chamber vacuum of 40 mTorr and a temperature of 50℃ during the coating process, and a coating time of 14 minutes, thus depositing a film layer on the surface of the glass substrate.

[0167] (5) Cooling and removal

[0168] After deposition is complete, the plasma source and gas delivery system are shut off, and gas flow is stopped. The temperature inside the chamber gradually decreases to room temperature. Clean compressed air or inert gas is introduced into the chamber to restore atmospheric pressure. The chamber is then opened, and the glass substrate with the deposited film is removed.

[0169] (6) Membrane quality testing and evaluation

[0170] The film thickness and water contact angle of the glass substrate with the film layer were tested using a film thickness gauge / elliptic polarization spectrometer and a contact angle meter. The measured film thickness and water contact angle are listed in the data table.

[0171] The glass substrate fogged up during the anti-fog test, so its water immersion performance and durability were not tested.

[0172] The transmittance data of the glass substrate after the deposited film, measured using a UV-Vis spectrophotometer, in the visible light band is listed in the data table.

[0173] Experimental Example 6: Silane (SiH4): Oxygen (O2) = 1:1

[0174] (1) Detergent / Ultrasonic cleaning

[0175] The glass substrate is ultrasonically cleaned by immersing it in a cleaning agent (isopropyl alcohol), then ultrasonically rinsed by immersion in deionized water, and finally dried with hot air at a temperature between room temperature and 60°C.

[0176] (2) Chamber preheating and vacuum extraction

[0177] The dried glass substrate is placed on a rotating rack within the 400L chamber of the coating equipment. The vacuum system is activated to extract air from the chamber and evacuate it to a vacuum level of 10. -2 Pa. Activate the temperature control system to heat the chamber to 50°C.

[0178] (3) Plasma cleaning

[0179] Maintaining the vacuum level in the chamber at approximately 60 mTorr, argon gas (Ar) was introduced into the chamber at a flow rate of 200 sccm. The ICP RF power supply was then activated for plasma discharge, and the pulse bias power supply was started for 5 minutes. During this time, the parameters for the ICP RF power supply plasma discharge were: frequency 13.56 MHz, power 600 W; and the parameters for the pulse bias power supply were: frequency 250 kHz, duty cycle 90%, and bias voltage -300 V. Next, argon gas (Ar) and oxygen gas (O2) were introduced into the chamber at a flow rate of 100 sccm. The ICP RF power supply plasma discharge was then activated, and the pulse bias power supply was started for 5 minutes. During this time, the parameters for the ICP RF power supply plasma discharge were: frequency 13.56 MHz, power 600 W; and the parameters for the pulse bias power supply were: frequency 250 kHz, duty cycle 90%, and bias voltage -300 V.

[0180] (4) Film deposition

[0181] Silicate (SiH4) and oxygen (O2) were introduced into the chamber at a flow rate of 30 sccm, and argon (Ar) was introduced into the chamber at a flow rate of 150 sccm. The ICP radio frequency power supply was turned on to perform plasma discharge for coating. The parameters of the ICP radio frequency power supply plasma discharge included: frequency 13.56 MHz, power 800 W, maintaining a chamber vacuum of 40 mTorr and a temperature of 50℃ during the coating process, and a coating time of 9 minutes, thus depositing a film layer on the surface of the glass substrate.

[0182] (5) Cooling and removal

[0183] After deposition is complete, the plasma source and gas delivery system are shut off, and gas flow is stopped. The temperature inside the chamber is gradually reduced to room temperature. Gas is introduced into the chamber to restore atmospheric pressure, the chamber is opened, and the glass substrate with the deposited film is removed.

[0184] (6) Membrane quality testing and evaluation

[0185] The film thickness and water contact angle of the glass substrate with the film layer were tested using a film thickness gauge / elliptic polarization spectrometer and a contact angle meter. The measured film thickness and water contact angle are listed in the data table.

[0186] The glass substrate fogged up during the anti-fog test, so its water immersion performance and durability were not tested.

[0187] The transmittance data of the glass substrate after the deposited film, measured using a UV-Vis spectrophotometer, in the visible light band is listed in the data table.

[0188] Experimental Example 7: Silane (SiH4): Nitrous oxide (N2O) = 1:11

[0189] (1) Detergent / Ultrasonic cleaning

[0190] The glass substrate is ultrasonically cleaned by immersing it in a cleaning agent (ethanol), then ultrasonically rinsed by immersion in deionized water, and finally dried with hot air at a temperature between room temperature and 60°C.

[0191] (2) Chamber preheating and vacuum extraction

[0192] The dried glass substrate is placed on a rotating rack within the 400L chamber of the coating equipment. The vacuum system is activated to extract air from the chamber and evacuate it to a vacuum level of 10. -2 Pa. Activate the temperature control system to heat the chamber to 50°C.

[0193] (3) Plasma cleaning

[0194] Maintaining the vacuum level in the chamber at approximately 60 mTorr, argon gas (Ar) was introduced into the chamber at a flow rate of 200 sccm. The ICP RF power supply was then activated for plasma discharge, and the pulse bias power supply was started for 5 minutes. During this time, the parameters for the ICP RF power supply plasma discharge were: frequency 13.56 MHz, power 600 W; and the parameters for the pulse bias power supply were: frequency 250 kHz, duty cycle 90%, and bias voltage -300 V. Next, argon gas (Ar) and nitrous oxide (N2O) were introduced into the chamber at a flow rate of 100 sccm. The ICP RF power supply was then activated for plasma discharge, and the pulse bias power supply was started for 5 minutes. During this time, the parameters for the ICP RF power supply plasma discharge were: frequency 13.56 MHz, power 600 W; and the parameters for the pulse bias power supply were: frequency 250 kHz, duty cycle 90%, and bias voltage -300 V.

[0195] (4) Film deposition

[0196] Silicate (SiH4) was introduced into the chamber at a flow rate of 20 sccm, nitrous oxide (N2O) was introduced into the chamber at a flow rate of 220 sccm, and argon (Ar) was introduced into the chamber at a flow rate of 150 sccm. The ICP radio frequency power supply was turned on to perform plasma discharge for coating. The parameters of the ICP radio frequency power supply plasma discharge included: frequency 13.56 MHz, power 800 W, maintaining a chamber vacuum of 40 mTorr and a temperature of 50℃ during the coating process, and a coating time of 2 minutes, thus depositing a film layer on the surface of the glass substrate.

[0197] (5) Cooling and removal

[0198] After deposition is complete, the plasma source and gas delivery system are shut off, and gas flow is stopped. The temperature inside the chamber is gradually reduced to room temperature. Gas is introduced into the chamber to restore atmospheric pressure, the chamber is opened, and the glass substrate with the deposited film is removed.

[0199] (6) Membrane quality testing and evaluation

[0200] The film thickness and water contact angle of the glass substrate with the film layer were tested using a film thickness gauge / elliptic polarization spectrometer and a contact angle meter. The measured film thickness and water contact angle are listed in the data table.

[0201] The anti-fogging performance, water immersion performance, and durability performance measured by anti-fogging test, water immersion test, and durability test are listed in the data table.

[0202] The transmittance data of the glass substrate after the deposited film, measured using a UV-Vis spectrophotometer, in the visible light band is listed in the data table.

[0203] Example 8: Dichlorosilane (Si2H6): Nitrous oxide (N2O) = 1:14

[0204] (1) Detergent / Ultrasonic cleaning

[0205] The glass substrate is ultrasonically cleaned by immersing it in a cleaning agent (ethanol), then ultrasonically rinsed by immersion in deionized water, and finally dried with hot air at a temperature between room temperature and 60°C.

[0206] (2) Chamber preheating and vacuum extraction

[0207] The dried glass substrate is placed on a rotating rack within the 400L chamber of the coating equipment. The vacuum system is activated to extract air from the chamber and evacuate it to a vacuum level of 10. -2 Pa. Activate the temperature control system to heat the chamber to 50°C.

[0208] (3) Plasma cleaning

[0209] Maintaining the vacuum level in the chamber at approximately 60 mTorr, argon gas (Ar) was introduced into the chamber at a flow rate of 200 sccm. The ICP RF power supply was then activated for plasma discharge, and the pulse bias power supply was started for 5 minutes. During this time, the parameters for the ICP RF power supply plasma discharge were: frequency 13.56 MHz, power 600 W; and the parameters for the pulse bias power supply were: frequency 250 kHz, duty cycle 90%, and bias voltage -300 V. Next, argon gas (Ar) and nitrous oxide (N2O) were introduced into the chamber at a flow rate of 100 sccm. The ICP RF power supply was then activated for plasma discharge, and the pulse bias power supply was started for 5 minutes. During this time, the parameters for the ICP RF power supply plasma discharge were: frequency 13.56 MHz, power 600 W; and the parameters for the pulse bias power supply were: frequency 250 kHz, duty cycle 90%, and bias voltage -300 V.

[0210] (4) Film deposition

[0211] Silane (Si2H6) was introduced into the chamber at a flow rate of 10 sccm, nitrous oxide (N2O) was introduced into the chamber at a flow rate of 140 sccm, and argon (Ar) was introduced into the chamber at a flow rate of 150 sccm. The ICP radio frequency power supply was turned on to perform plasma discharge for coating. The parameters of the ICP radio frequency power supply plasma discharge included: frequency 13.56 MHz, power 800 W, maintaining a chamber vacuum of 40 mTorr and a temperature of 50℃ during the coating process, and a coating time of 5 minutes, thus depositing a film layer on the surface of the glass substrate.

[0212] (5) Cooling and removal

[0213] After deposition is complete, the plasma source and gas delivery system are shut off, and gas flow is stopped. The temperature inside the chamber is gradually reduced to room temperature. Gas is introduced into the chamber to restore atmospheric pressure, the chamber is opened, and the glass substrate with the deposited film is removed.

[0214] (6) Membrane quality testing and evaluation

[0215] The film thickness and water contact angle of the glass substrate with the film layer were tested using a film thickness gauge / elliptic polarization spectrometer and a contact angle meter. The measured film thickness and water contact angle are listed in the data table.

[0216] The anti-fogging performance, water immersion performance, and durability performance measured by anti-fogging test, water immersion test, and durability test are listed in the data table.

[0217] The transmittance data of the glass substrate after the deposited film, measured using a UV-Vis spectrophotometer, in the visible light band is listed in the data table.

[0218] Data table

[0219]

[0220] Referring to the data table in Experiment Examples 1-8 above, under plasma discharge conditions, silicon-containing inorganic compound gases or vapors (such as silane (SiH4) and disilane (Si2H6)) and oxygen-containing inorganic compounds (such as nitrous oxide (N2O) and oxygen (O2)) are deposited on the surface of the substrate to form a hydrophilic film layer with a water contact angle of less than 90° or 50°. Possible reasons include that, under the action of plasma, silicon-containing inorganic compound gases or vapors (such as silane (SiH4) and disilane (Si2H6)) react with oxygen-containing inorganic compounds (such as nitrous oxide (N2O) or oxygen (O2)) to deposit a hydrophilic film layer rich in Si-OH. Surprisingly, if the transmittance of the film layer to the substrate decreases, it is relatively small (e.g., within 0.2% of 91.8%-91.6%), or it increases the transmittance of the substrate.

[0221] Moreover, surprisingly, as shown in the data tables of Experimental Examples 1-4 and 8, when the flow ratio of silicon-containing inorganic compound gas or vapor to oxygen-containing inorganic compound gas or vapor in silicon units is in the range of 1:2.5 to 1:10, the resulting film exhibits excellent hydrophilicity and anti-fogging properties: a water contact angle of less than 10° or below 5°, no fogging within a distance of 5 cm to 10 cm in hot water at a temperature range of 60°C to 90°C, and no fogging within a distance of 5 cm to 10 cm in hot water at a temperature range of 60°C to 90°C after immersion in water for more than 24 hours and placement at room temperature for more than 6 months, thus qualifying as a superhydrophilic anti-fogging film. The film can even increase the light transmittance of the substrate, for example, by more than 0.4% (92.2% - 91.8% = 0.4%).

[0222] For example, as shown in the data table of Experiment Example 1-2, when nitrous oxide (N2O) is used as the oxygen source, the membrane prepared with a flow ratio of silane (SiH4):nitrous oxide (N2O) in the range of 1:4 to 1:10 exhibits excellent hydrophilicity and anti-fogging properties: the water contact angle is below 5°, and it does not fog within a distance of 5 cm to 10 cm in hot water within the temperature range of 60℃ to 90℃. After immersion in water for more than 72 hours and placement at room temperature for more than 1 year, it still does not fog within a distance of 5 cm to 10 cm in hot water within the temperature range of 60℃ to 90℃, thus qualifying as a superhydrophilic anti-fogging membrane. The membrane can even improve the light transmittance of the substrate, for example, by more than 0.4% (92.2% - 91.8% = 0.4%).

[0223] For example, the data table in Experiment Example 8 shows that when nitrous oxide (N2O) is used as the oxygen source, membranes prepared with a flow ratio of silane (Si2H6) to nitrous oxide (N2O) of 1:8 to 1:20 (half of the flow ratio of silicon units corresponding to one silicon atom of silane (Si2H6) of 1:4 to 1:10) exhibit excellent hydrophilicity and anti-fogging properties: the water contact angle is below 5°, and no fogging occurs within a distance of 5 cm to 10 cm in hot water at a temperature range of 60℃ to 90℃. After immersion in water for more than 24 hours and placement at room temperature for more than 6 months, no fogging occurs within a distance of 5 cm to 10 cm in hot water at a temperature range of 60℃ to 90℃, thus qualifying as a superhydrophilic anti-fogging membrane. The membrane can even improve the light transmittance of the substrate, for example, 93.1% - 91.8% = 1.3%.

[0224] For example, referring to the data table in Experiment Example 3-4, when oxygen (O2) is used as the oxygen source, the membrane prepared with a silane (SiH4) : oxygen (O2) flow ratio in the range of 1:2.5 to 1:8 exhibits excellent hydrophilicity and anti-fogging properties: the water contact angle is below 5°, and it does not fog within a distance of 5 cm to 10 cm in hot water within the temperature range of 60℃ to 90℃. After immersion in water for more than 72 hours and placement at room temperature for more than 1 year, it still does not fog within a distance of 5 cm to 10 cm in hot water within the temperature range of 60℃ to 90℃, thus qualifying as a superhydrophilic anti-fogging membrane. The membrane can even improve the light transmittance of the substrate, for example, by more than 0.6% (92.4% - 91.8% = 0.6%).

[0225] The various specific embodiments described above are merely some specific embodiments used to illustrate the features and effects of the present invention, and are not all embodiments of the present invention, nor are they intended to unnecessarily limit the scope of protection of the invention patent. For those skilled in the art, other embodiments can be obtained based on these specific embodiments without inventive effort. The scope of protection of this invention patent should be determined by the appended claims, and the specification can be used to interpret the content of the claims.

Claims

1. A method for preparing a film layer on the surface of a substrate, characterized in that, include: The substrate is placed inside the chamber; Introduce silicon-containing inorganic compound gas or vapor and oxygen-containing inorganic compound gas or vapor into the chamber; as well as A plasma source is activated to deposit the film layer on the surface of the substrate under plasma discharge conditions.

2. The method for preparing a film layer on the surface of a substrate as described in claim 1, characterized in that, The silicon-containing inorganic compounds include SiH4, Si2H6, and Si4H 10 One or more of the following: SiH(SiH3)3, SiCl4, SiHCl3, SiH3Cl, SiH2Cl2, SiHCl3, and Si2Cl6.

3. The method for preparing a film layer on the surface of a substrate as described in claim 1, characterized in that, The oxygen-containing inorganic compounds include one or more of N2O, O2, O3, and H2O.

4. The method for preparing a film layer on the surface of a substrate as described in claim 1, characterized in that, When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the silicon unit flow ratio of the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor is in the range of 1:2.5 to 1:

10. The silicon unit flow ratio is the flow ratio of the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor corresponding to one silicon atom in the chemical formula of the silicon-containing inorganic compound.

5. The method for preparing a film layer on the surface of a substrate as described in claim 1, characterized in that, The oxygen-containing inorganic compound includes N2O. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the silicon unit flow ratio of the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor is in the range of 1:4 to 1:10 or 1:4.5 to 1:

7. The silicon unit flow ratio is the flow ratio of the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor corresponding to one silicon atom in the chemical formula of the silicon-containing inorganic compound.

6. The method for preparing a film layer on the surface of a substrate as described in claim 1, characterized in that, The oxygen-containing inorganic compound includes O2. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the silicon unit flow ratio of the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor is in the range of 1:2.5 to 1:8 or 1:3 to 1:

5. The silicon unit flow ratio is the flow ratio of the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor corresponding to one silicon atom in the chemical formula of the silicon-containing inorganic compound.

7. The method for preparing a film layer on the surface of a substrate as described in claim 1, characterized in that, The silicon-containing inorganic compound includes SiH4, and the oxygen-containing inorganic compound includes N2O. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:4 to 1:10, or 1:4.5 to 1:

7.

8. The method for preparing a film layer on the surface of a substrate as described in claim 1, characterized in that, The silicon-containing inorganic compound includes SiH4, and the oxygen-containing inorganic compound includes O2. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:2.5 to 1:8 or 1:3 to 1:

5.

9. The method for preparing a film layer on the surface of a substrate as described in claim 1, characterized in that, The silicon-containing inorganic compound includes Si2H6, and the oxygen-containing inorganic compound includes N2O. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:8 to 1:20 or 1:9 to 1:

14.

10. The method for preparing a film layer on the surface of a substrate as described in claim 1, characterized in that, The silicon-containing inorganic compound includes Si2H6, and the oxygen-containing inorganic compound includes O2. When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the flow rate ratio of the silicon-containing inorganic compound gas or vapor to the oxygen-containing inorganic compound gas or vapor is in the range of 1:5 to 1:16 or 1:6 to 1:

10.

11. The method for preparing a film layer on the surface of a substrate as described in any one of claims 1-10, characterized in that, When the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, an inert gas is introduced into the chamber.

12. The method for preparing a film layer on the surface of a substrate as described in any one of claims 1-10, characterized in that, Before introducing the silicon-containing inorganic compound gas or vapor and the oxygen-containing inorganic compound gas or vapor into the chamber, an inert gas and / or the oxygen-containing inorganic compound gas or vapor are introduced into the chamber.

13. The method for preparing a film layer on the surface of a substrate as described in claim 12, characterized in that, When the inert gas and / or the oxygen-containing inorganic compound gas or vapor are introduced into the chamber, the bias power supply is activated.

14. The method for preparing a film layer on the surface of a substrate as described in any one of claims 11-13, characterized in that, The inert gases include argon and helium.

15. The method for preparing a film layer on the surface of a substrate as described in any one of claims 1-10, characterized in that, The temperature inside the chamber is in the range of room temperature to 100°C, and the air pressure is in the range of 1 Pa to 20 Pa.

16. A product characterized in that, This includes films prepared by the method for preparing a film layer on the surface of a substrate as described in any one of claims 1-15.

17. The product as described in claim 16, characterized in that, The water contact angle of the membrane is less than 90°, 50°, or 10°, or below 5°.

18. The product as described in claim 16, characterized in that, The membrane does not fog up within a distance of 5 cm to 10 cm from hot water in the temperature range of 60℃ to 90℃.

19. The product as described in claim 16, characterized in that, The membrane does not fog up within a distance of 5 cm to 10 cm in hot water at a temperature range of 60°C to 90°C after being immersed in water for more than 24 or 72 hours.

20. The product as described in claim 16, characterized in that, The membrane does not fog up within a distance of 5 cm to 10 cm from hot water at a temperature range of 60°C to 90°C after being placed in a room temperature environment for more than 6 months or after 1 year.

21. The product as described in claim 16, characterized in that, The film layer reduces the light transmittance of the substrate by less than 0.2%, or increases the light transmittance of the substrate.

22. The product as described in any one of claims 16-21, characterized in that, The substrate is made of glass, ceramic, plastic and / or polymer.

23. The product as described in any one of claims 16-21, characterized in that, The substrate includes optical elements.

24. The product as described in any one of claims 16-21, characterized in that, This includes one or more of the following: goggles, laser protective goggles, telescopes, camera lenses, observation windows of mechanical devices, sports diving masks, bathroom glass, chemical and / or biological protective masks, vehicle windshields and / or rearview mirrors, bomb disposal protective equipment, helmets, solar panels, observation windows of measuring instruments, glass covers, glass walls of greenhouses, and architectural glass.

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