Device with current monitoring function and current monitoring method

Abstract

The invention discloses a device with current monitoring and a current monitoring method. An apparatus, such as a switching circuit providing current monitoring, as discussed herein, may include a current monitor circuit, a first switch fabricated via a first semiconductor technology, and a second switch fabricated via a second semiconductor technology. The current monitor circuit may include a second switch. The current monitor circuit may be configured to provide a mirror image of a magnitude of a second current through the second switch relative to a magnitude of a first current through the first switch. The apparatus as discussed herein may also include a signal converter operable to convert a first control signal controlling the first switch to a second control signal operable to control the second switch. Furthermore, an apparatus as discussed herein may include a gate drive voltage compensation circuit and / or a temperature compensation circuit to provide a compensated and more accurate output signal indicative of a magnitude of the first current through the first switch.

Description

Technical Field

[0001] This disclosure generally relates to the field of electronics, and more specifically to compensated current sensing switching circuits. Background Technology

[0002] Conventional current mirror circuits are typically configured to replicate the primary current through the first transistor by controlling the current through the second transistor. Generally, the magnitude of the replicated current through the second transistor is equal to or at least proportional to the magnitude of the primary current through the first transistor.

[0003] Typically, when implementing a current mirror circuit, the first and second transistors, as previously discussed, are manufactured using the same semiconductor manufacturing process, such that at least the most relevant operating characteristics associated with the first and second transistors are the same. Summary of the Invention

[0004] The realization of clean energy (or green technology) is crucial for reducing human impact on the environment. Generally, clean energy encompasses any evolving methods and materials used to reduce the overall environmental toxicity of energy consumption.

[0005] This disclosure includes the observation that raw energy, whether received from green or non-green energy sources, typically needs to be converted into an appropriate form (e.g., desired AC voltage, DC voltage, etc.) before it can be used to power terminal devices such as servers, computers, mobile communication devices, etc. Regardless of whether the energy is received from green or non-green energy sources, it is desirable to use the raw energy provided by such systems most efficiently to reduce our environmental impact. This disclosure contributes to reducing our carbon footprint (and green energy) through more efficient energy conversion and the circuitry implementations that support more efficient energy conversion.

[0006] The apparatus discussed herein includes: a first switch (e.g., a so-called power MOSFET or other suitable entity), for example disposed in a first semiconductor chip manufactured via a first semiconductor technology; a second switch, for example disposed in a second semiconductor chip manufactured via a second semiconductor technology; and a current monitoring circuit including the second switch, the current monitoring circuit being operable to provide a mirror image of a second current through the second switch relative to a first current through the first switch.

[0007] In one example, via current mirroring, the magnitude of the second current iS is proportional to the magnitude of the first current iL, such that iS = (1 / N)*iL, where N defines the ratio value.

[0008] In another example, the apparatus discussed may be configured to include a first node operable to receive a first control signal controlling the operation of a first switch, the controlled operation of which operable to control the magnitude of the resistance between the drain node and the source node of the first switch. The apparatus discussed herein may also include a signal converter operable to convert the first control signal received at the first node into a second control signal operable to control the operation of a second switch.

[0009] In another example, via a current mirroring function as discussed herein and a second control signal derived from a first control signal, the generated second control signal is operable to control a second resistance between the drain node and the source node of the second switch, such that the magnitude of the second current through the second switch is proportional to the magnitude of the first current through the first switch. In other words, the current mirroring function as discussed herein includes controlling the magnitude of the second current through the second switch to be proportional to the magnitude of the first current through the first switch.

[0010] Note that the resulting second control signal can be applied to the gate node of the second switch. Also note that the signal converter discussed herein can be configured to include a resistor divider circuit that is operable to generate a second control signal with a magnitude proportional to the magnitude of the first control signal.

[0011] Furthermore, note that the magnitude of the first control signal (controlling the first switch) can vary within a first voltage range. The signal converter can be configured to control the magnitude of the second control signal (for controlling the second switch) within a second voltage range. In one example, the second voltage range is smaller than the first voltage range.

[0012] According to another example discussed herein, the first switch can be a power switch fabricated on a first semiconductor chip, wherein the first switch is fabricated according to a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) or other suitable first semiconductor chip fabrication technology. The second switch can be fabricated as a so-called sensing switch fabricated on a second semiconductor chip, wherein the second switch is fabricated according to CMOS (Complementary Metal-Oxide-Semiconductor) or other suitable second semiconductor chip fabrication technology. Therefore, the second semiconductor chip can be fabricated independently of the first semiconductor chip.

[0013] Based on further examples discussed herein, a current monitoring circuit can be configured to generate an output signal indicating the magnitude of a first current passing through a first switch. The apparatus discussed herein may also include a temperature compensation circuit operable to: i) receive a temperature value generated by a temperature sensor circuit disposed on a semiconductor chip including a second switch, and ii) adjust the magnitude of the output signal according to the magnitude of the temperature value.

[0014] Furthermore, as discussed herein, the current monitor circuit can be configured to generate an output signal indicating the magnitude of the first current by generating an output signal based on the magnitude of the second current. The current monitor circuit may also include a temperature compensation circuit operable to: i) receive a temperature value indicating the temperature of the second switch, and ii) adjust the output signal based on the received temperature value. The temperature compensation discussed herein can be implemented in any suitable manner. In one example, the temperature compensation circuit is operable to: inject current into the output signal of the current monitor circuit under a first condition where the temperature value is below a threshold level; and the temperature compensation circuit is operable to: source current to the output signal under a second condition where the temperature value is above a threshold level.

[0015] In yet another example, as previously discussed, the current monitoring circuit discussed herein can be configured to generate an output signal indicating the magnitude of the first current through the first switch based on monitoring the magnitude of the second current through the second switch. The current monitoring circuit can also be configured to include a drive voltage compensation circuit operable to: i) receive a drive voltage value indicating the drive voltage (also referred to as VDRV) applied to the first switch, and ii) adjust the output signal according to the received drive voltage value.

[0016] The output signal can be an output current whose magnitude indicates the magnitude of the first current. The drive voltage compensation circuit can be configured to: sink current into the output signal under a first condition where the magnitude of the drive voltage value is below a threshold level; and to: source current into the output signal under a second condition where the magnitude of the drive voltage value is above a threshold level. Therefore, drive voltage compensation can be achieved by sinking or sourcing current relative to the output signal, such that the output signal (derived from the second current) accurately represents the magnitude of the first current.

[0017] In other examples, such as the current monitor circuit discussed herein, the signal converter may be configured to include a signal converter operable to: i) receive a first control signal applied to a first switch, ii) receive a temperature signal indicating the temperature of a second switch, iii) generate a drive signal based on the first control signal and the temperature signal, and iv) apply the drive signal to the gate node of the second switch.

[0018] Furthermore, note that the circuit discussed herein can be configured to include a first node operable to receive a first control signal. The first control signal can be configured to control a corresponding resistor associated with a first switch. Controlling the first switch can control the magnitude of the resistance between the source node and the drain node of the first switch. The implementation of the signal converter discussed herein can be operated to: i) receive a second signal derived from the first control signal, the second signal indicating the magnitude of the first control signal; ii) receive a temperature signal indicating the temperature of the second switch; iii) generate a drive signal based on the second signal and the temperature signal; and iv) apply the drive signal to the gate node of the second switch.

[0019] In yet another example, the current monitoring circuit may include a plurality of switches connected in parallel with the second switch. These plurality of switches may include a third switch circuit and a fourth switch circuit. The current monitoring circuit discussed herein may also include a first signal converter and a second signal converter. In such a case, the first signal converter may be configured to: i) receive a temperature signal indicating the temperature of the second switch, and ii) convert the temperature signal into a first control signal applied to the third switch circuit. The second signal converter may be configured to: i) receive a switch drive signal applied to the first switch, and ii) convert the switch drive signal into a second control signal applied to the fourth switch circuit. The first control signal may be configured to provide temperature compensation associated with the generation of an output signal indicating the magnitude of a first current through the first switch, the output signal being derived from a second current; and the second control signal may be operable to provide drive voltage compensation associated with the generation of the output signal.

[0020] It should also be noted that the current monitoring circuit discussed herein can be configured to include a first resistor (e.g., a first resistance path) made of a first resistive material and a second resistor (e.g., a second resistance path) made of a second resistive material. The first and second resistors can be arranged in a current mirror circuit of the current monitoring circuit. In one example, the first resistive material has a first temperature coefficient; the second resistive material has a second temperature coefficient. The first switch can be configured to have a first RDSon temperature coefficient; the second switch can be configured to have a second RDSon temperature coefficient. Furthermore, the first and second temperature coefficients can be selected such that the magnitude of a first ratio of the second temperature coefficient of the second resistive material to the first temperature coefficient of the first resistive material is substantially equal to the magnitude of a second ratio of the second RDSon temperature coefficient of the second switch to the first RDSon temperature coefficient of the first switch. The first and second resistive materials can be configured to provide temperature compensation for converting a second current into an output signal indicating the magnitude of the first current. In one example, the magnitude of the first temperature coefficient is smaller than the magnitude of the second temperature coefficient. In other words, the first material can be a low-temperature coefficient material, while the second resistive material can be a high-temperature coefficient material.

[0021] Another example discussed herein includes a method comprising: receiving a first switch manufactured via a first semiconductor technology; receiving a second switch manufactured via a second semiconductor technology; manufacturing a current monitoring circuit including the second switch, the current monitoring circuit being operable to provide a mirror image of the magnitude of a second current passing through the second switch relative to the magnitude of a first current passing through the first switch; and manufacturing a current monitoring circuit including a compensation circuit operable to adjust the magnitude of an output signal derived from the second current such that the magnitude of the output signal represents the magnitude of the first current passing through the first switch.

[0022] Furthermore, it should be noted that although each of the different features, techniques, configurations, etc., described herein may be discussed in different places, the intention of this disclosure is that each of the concepts may be selectively implemented independently of each other or in combination with each other, where appropriate. Therefore, one or more of the inventions described herein can be practiced and viewed in many different ways.

[0023] Furthermore, it should be noted that the preliminary discussion of the technology herein (Summary of the Invention) is not intended to specify every novel aspect of this disclosure or the claimed invention. Rather, the Summary of the Invention only presents general aspects and corresponding points of novelty relative to conventional technology. For additional details and / or possible perspectives (arrangements) of the invention, the reader shall refer to the Detailed Description of the Invention (which is a summary) and corresponding drawings discussed further below. Attached Figure Description

[0024] Figure 1 This is an example diagram illustrating the implementation of the switching circuit and current monitor circuit discussed in this article.

[0025] Figure 2 This is an example diagram illustrating the implementation of several different semiconductor chips in a circuit as discussed herein.

[0026] Figure 3 This is an example diagram illustrating a current monitor circuit that implements the compensation discussed herein.

[0027] Figure 4 This is an example diagram illustrating the implementation of a signal converter circuit as discussed in this article.

[0028] Figure 5 This is an example diagram illustrating the signal converter circuit and compensation circuit discussed herein.

[0029] Figure 6 This is an example diagram illustrating the implementation of the temperature compensation circuit discussed in this article.

[0030] Figure 7 This is an example diagram illustrating the implementation of the gate drive compensation circuit as discussed in this article.

[0031] Figure 8 This is an example diagram illustrating the implementation of the temperature compensation circuit and gate drive compensation circuit discussed in this article.

[0032] Figure 9 This is an example diagram illustrating the implementation of the gate drive compensation circuit and temperature compensation circuit as discussed in this article.

[0033] Figure 10 This is an example diagram illustrating an implementation of temperature compensation using different types of resistive materials with different temperature coefficients, as discussed herein.

[0034] Figure 11 This is an example diagram illustrating example computer hardware and software operable to perform manufacturing operations as discussed herein.

[0035] Figure 12 This is an example diagram illustrating the method discussed in this article.

[0036] Figure 13 This is an example diagram illustrating the method discussed in this article.

[0037] As illustrated in the accompanying drawings, the foregoing and other objects, features, and advantages of the subject matter disclosed herein will become apparent from the more specific description herein, in which the same reference numerals denote the same parts in different views. The drawings are not necessarily drawn to scale, but are intended to illustrate principles, concepts, aspects, techniques, etc. Detailed Implementation

[0038] As discussed herein, a device for providing current monitoring, such as a switching circuit, may include: a first switch manufactured via a first semiconductor technology (e.g., in a first semiconductor chip); a second switch manufactured via a second semiconductor technology (e.g., in a second semiconductor chip); and a corresponding current monitoring circuit. The current monitoring circuit may include the second switch.

[0039] The current monitoring circuit can be configured to provide a mirror image of the second current flowing through the second switch relative to the first current flowing through the first switch. Because the first and second switches can support different input drive voltage ranges (e.g., because they are manufactured using different semiconductor fabrication processes), the apparatus (circuit) discussed herein can include a signal converter operable to convert a first control signal controlling the first switch into a second control signal operable to control the second switch. Since the logic level of the second control signal follows the logic of the first control signal, the signal converter is capable of simultaneously controlling both switches to similar on / off states.

[0040] Furthermore, the current monitor circuit discussed herein can be configured to derive an output signal based on the magnitude of a second current, which substantially mirrors the magnitude of the first current. The output signal indicates the magnitude of the current through the second switch, which, theoretically, is proportional to the magnitude of the first current through the first switch, and indicates the magnitude of the first current through the first switch.

[0041] Because the technologies used to manufacture the first and second transistors differ, there is a potential for inaccuracy associated with mirroring the first current to the second current. Therefore, using the second current to generate the output signal without compensation may result in an inaccurate representation of the magnitude of the first current from the current monitor circuitry. The apparatus discussed herein may include one or more of a gate drive voltage (also known as VGDRIVE) compensation circuitry and / or a temperature compensation circuitry to compensate the output signal so that the compensated output signal from the current monitor circuitry more accurately represents the magnitude of the first current passing through the first switch. In other words, the compensation circuitry discussed herein is capable of generating an output signal that accurately indicates the magnitude of the current through the first switch using switches manufactured according to different technologies.

[0042] Now, more specifically, Figure 1This is an example diagram illustrating a device including a switching circuit and a current monitoring circuit as discussed herein.

[0043] In this example, circuit 100 includes multiple components such as switch 131, switch 132, signal converter 150, and current monitor circuit 108.

[0044] As shown, switch 131 (e.g., a so-called power MOSFET or other suitable entity) is coupled (also referred to as connected) between nodes N2 and N3. For example, the drain node D of switch 131 is directly coupled (also referred to as connected) to node N2. The source node S of switch 131 is directly connected to node N3. In one example, as further discussed herein, the magnitude of the current iL through the first switch 131 is N times the magnitude of the current iS through switch 132.

[0045] Additionally, note that circuit 100 can be configured to include controller 140. Controller 140 generates a corresponding control signal 101 applied to the gate node G (also referred to as node N1) of circuit 100. Typically, a logic high voltage applied to the gate node G of switch 131 activates switch 131, resulting in a low-resistance path between the drain node D and source node S of switch 131. Conversely, a logic low voltage applied to the gate node G of switch 131 deactivates switch 131 to the off state, resulting in a high-resistance path between the drain node D and source node S of switch 131.

[0046] Therefore, the controller 140 can be configured to control the switch 131 to be in an on or off state according to the magnitude of the control signal 101.

[0047] According to another example discussed herein, switch 131 (e.g., one or more switches connected in parallel) can be manufactured according to a first semiconductor technology. The controller can be configured to generate control signal 101 within a first range defined by a first logic high voltage and a first logic low voltage associated with the first semiconductor technology. For example, the specification associated with the first switch 131 could be: the first logic high voltage could be 5 volts DC, and the first logic low voltage could be 0 volts DC.

[0048] Switch 132 (e.g., one or more switches connected in parallel) can be manufactured according to a second semiconductor technology that requires different voltage ranges (e.g., a smaller input voltage range associated with driving switch 131) to be applied to the gate node G of switch 132. In such a case, it is not desirable to simply use control signal 101 to drive the gate node of switch 132, because switch 132 may not tolerate the application of a first logic voltage, such as 5 volts DC applied to its gate node. To address this problem, circuit 100 can be configured to include signal converter 150. Signal converter 150 can be configured to derive control signal 102 based on control signal 101. In one example, signal converter 150 generates control signal 102 falling within a second range defined by a second logic high voltage and a second logic low voltage. For example, the second logic high voltage could be 3 volts DC, and the second logic low voltage could be 0 volts DC.

[0049] In one example, as further discussed herein, signal converter 150 can be configured to generate a control signal 102 that is 60% of the size of control signal 101 (or some other suitable gain value). Therefore, in one example, when control signal 101 is logic high (e.g., 5V DC), it is desirable to simultaneously activate switches 131 and 132 to their respective ON states; and when control signal 101 is logic low (e.g., 0V DC), it is desirable to simultaneously deactivate switches 131 and 132 to their OFF states.

[0050] As further shown, the first current iL flows from node N2 through switch 131 to node N3. The second current iS flows from node N2 through switch 132 to node N4.

[0051] It should also be noted that circuit 100 and the corresponding switches 131 and 132 support current mirroring. For example, current monitor circuit 108 (also referred to as current sensing circuit) includes a second switch 132. Current monitor circuit 108 is operable to provide a mirror image of a second current iS through the second switch 132 relative to a first current iL through the first switch 131.

[0052] More specifically, as previously discussed, controller 140 is configured to control the state of switch 131. The magnitude of the second current iS is proportional to the magnitude of the first current iL via a current mirror between switch 131 and switch 132, such that iS = (1 / N)*iL, where N is the ratio value associated with current monitor circuit 108.

[0053] Therefore, the circuit 100 discussed herein can be configured to include a first node N1 operable to receive a first control signal 101 from the controller 140. The control signal 101 controls the operation of a first switch 131 between an on and off state. The controlled operation of the first switch 131 controls the magnitude of the resistance between the source node S and the drain node D of the first switch 131. As its name suggests, a signal converter 150 converts the first control signal 101 received at the first node N1 into a second control signal 102 operable to control the operation of a second switch 132. The second control signal 102 is applied to the gate node G of the second switch 132.

[0054] As discussed in detail below, the current monitoring circuit 108 can be configured to generate an output signal indicating the magnitude of the first current iL based on the amount of current iS detected flowing through the second switch 132.

[0055] Figure 2 This is an example diagram illustrating an implementation of multiple semiconductor chips used to implement circuits as discussed herein.

[0056] In this example, circuit 100 is implemented via a combination of semiconductor chips 201 and 202. Semiconductor chip 202 can be fabricated to include switch 132 and a corresponding current monitor circuit 108. Semiconductor chip 201 can be fabricated to include switch 131. The interconnections of switches 131, 132, and the corresponding current monitor circuit 108 are shown in other figures.

[0057] As previously discussed, the first switch 131, such as a power switch (field-effect transistor), can be fabricated on the first semiconductor chip 201. The first switch 131 (field-effect transistor) can be fabricated according to a first technology such as MOSFET (metal-oxide-semiconductor field-effect transistor) or other suitable technology.

[0058] The second switch 132 can be fabricated on the second semiconductor chip 202, such as a so-called sensing switch (field-effect transistor). The second switch 132 can be fabricated according to CMOS (complementary metal-oxide-semiconductor), BICMOS (bipolar complementary metal-oxide-semiconductor), or any other suitable technology.

[0059] Therefore, the second semiconductor chip 202 can be manufactured independently of the first semiconductor chip 201. In one example, the first semiconductor chip 201 (including switch 131) is diced from a first wafer of a plurality of identical or different first semiconductor chips manufactured according to a first semiconductor manufacturing technology. The second semiconductor chip 202 (including switch 132) is diced from a wafer of a plurality of identical or different second semiconductor chips manufactured according to a second semiconductor manufacturing technology.

[0060] Figure 3 This is an example diagram illustrating the switching circuit and the corresponding current monitoring circuit (including the compensation circuit) as discussed in this article.

[0061] As shown, the implementation of circuit 100-3 (an instantiation of circuit 100) may include a signal converter 150, switch 131, switch 132, and current monitor circuit 108. The current monitor circuit 108 in this example includes switch 132, operational amplifier 320, switches A1, A2, and A3, switches B1, B2, and B3, temperature compensation circuit 330, and drive voltage compensation circuit 340.

[0062] Furthermore, in this example, as previously discussed, control signal 101 controls the operation of switch 131 and the corresponding magnitude of the first current iL transmitted from node N2 to node N3 via switch 131.

[0063] As previously discussed, switch 132 is implemented in a current mirror configuration, in which the current iS through switch 132 proportionally tracks the magnitude of the current iL through switch 131.

[0064] More specifically, as previously discussed, via the current mirror between switches 131 and 132 supported by current monitor circuit 108, the magnitude of the second current iS is proportional to the magnitude of the first current iL, such that iS = (1 / N)*iL, where N is the ratio value. As further shown, the combination of circuitry including operational amplifier 320, the first switches (A1, A2, A3), and the second switches (B1, B2, and B3) generates a corresponding output signal 123, the magnitude of which is approximately proportional to the magnitude of the second current iS.

[0065] As previously discussed, switch 131 is manufactured according to a first semiconductor chip technology; switch 132 is manufactured according to a second semiconductor chip technology. In this case, switches 131 and 132 cannot be accurately tracked based on temperature or the magnitude of the drive voltage (control signal 101). To provide compensation for the chip manufacturing technology mismatch associated with the implementation of switches 131 and 132, current monitor circuit 108 may include temperature compensation circuit 330 and drive voltage compensation circuit 340.

[0066] In one example, based on a received temperature value (TEMP) indicating, for example, the corresponding temperature of semiconductor chip 201 or any component on it, temperature compensation circuit 330 generates a compensation signal 331 applied to output signal 123 (which has not yet been compensated) to produce output signal 123-1. In this example, output signal 123-1 is output from output node N5 (also known as IMON).

[0067] Typically, the compensation signal 331 applied to the output signal 123 generates a compensated output signal 123-1. Because the temperature compensation circuit 330 reduces the error, the compensated output signal 123-1 tracks the magnitude of the first current iL more closely than the output signal 123.

[0068] Based on the received drive voltage signal (also known as control signal 101) associated with control switch 131, drive voltage compensation circuit 340 generates compensation signal 341 that is applied to output signal 123.

[0069] Typically, the compensation signal 341 applied to the output signal 123 generates a compensated output signal 123-1. The compensated output signal 123-1 tracks the magnitude of the first current iL more closely than the output signal 123.

[0070] The following discusses the additional details of implementing compensation.

[0071] Figure 4 This is an example diagram illustrating the implementation of the signal converter circuit discussed in this article.

[0072] In this example, the signal converter 150 is implemented as a signal converter 150-1 comprising multiple resistors (e.g., resistor R1 and resistor R2). The ratio of resistors R1 and R2 controls the magnitude of the control signal 102.

[0073] For example, the magnitude of the control signal 102 output from the signal converter 150-1 is equal to the ratio (R2 / [R1+R2]) multiplied by the magnitude of the control signal 101.

[0074] Therefore, the signal converter 150-1 discussed herein can be configured to include a resistor divider circuit that is operable to generate a second control signal 102 in a manner proportional to the magnitude of the first control signal 101.

[0075] As previously discussed, controller 140 can be configured to generate control signal 101 within a first voltage range, for example, between 0 volts (controlling switch 131 to the off state) and 5 volts (controlling switch 131 to the on state). Signal converter 150-1 is operable to control the magnitude of second control signal 102 within a second voltage range, for example, between 0 volts (controlling switch 132 to the off state) and 3 volts (controlling switch 132 to the on state).

[0076] In this case, the second voltage range of control switch 132 (between 0 volts and 3 volts) is less than the first voltage range of control switch 131 (between 0 volts and 5 volts).

[0077] Note again that the range of the switch's input voltage, as well as the corresponding low and high voltage values, can vary depending on the example implementation.

[0078] Figure 5 This is an example diagram illustrating the signal converter circuit and compensation circuit discussed herein.

[0079] In this example, the novel current sensing architecture provides good accuracy even when using FETs (field-effect transistors) manufactured according to different technologies, such as switches 131 and 132. If desired, the circuit discussed herein can be configured to digitize the temperature sensing output. The digitized temperature sensing output can be used to fine-tune the current monitoring output accordingly to achieve temperature correction for the current monitoring output. Furthermore, the circuit discussed herein can be configured to change the gate drive voltage (control signal 102) of switch 132 (the so-called sensing FET) relative to a change in the gate drive voltage (control signal 101) of switch 131 (the so-called power FET). The circuit can also be configured to digitize the gate drive voltage (control signal 101) of the power FET and fine-tune the current monitoring output accordingly to achieve gate drive voltage correction for the current monitoring output.

[0080] More specifically, such as Figure 5 As shown, circuit 100-5, such as an instantiation of circuit 100 as previously discussed, includes signal converter 150. Signal converter 150 receives input control signal 101 and converts it into control signal 102. Control signal 101 controls the operation of switch 131. Control signal 102 controls the operation of switch 132.

[0081] Operational amplifier 320 receives a differential voltage from a combination of node N3 (coupled to the non-inverting input of operational amplifier 320) and node N4 (coupled to the inverting output of operational amplifier 320) as input. The combination of the output 321 of operational amplifier 320 and the voltage at node N4 controls the operation of switches A1, A2, A3, B1, B2, and B3 to generate output signal 123.

[0082] In one example, as previously discussed, the output signal 123 is a current signal whose magnitude varies depending on the magnitude of the current iS passing through switch 132.

[0083] In addition, circuit 100-5 includes temperature compensation circuit 330, temperature fine-tuning switch (also known as TEMP TRIM) 335, drive voltage compensation circuit 340 and drive voltage fine-tuning switch (also known as VDRV TRIM) 345.

[0084] In this example, the temperature fine-tuning switch 335 may include a first temperature fine-tuning switch 335-1 (one or more switches connected in parallel with switches A1, A2, A3) that supports the source of compensation current from voltage source 120 to output node N5, and a second temperature fine-tuning switch 335-2 (one or more switches connected in parallel with switches B1, B2, B3) that supports the source of compensation current from node N5 to ground reference potential 199.

[0085] The drive voltage fine-tuning switch 345 may include a first drive voltage fine-tuning switch 345-1 (one or more switches connected in parallel with switches A1, A2, A3) that supports current sourced from voltage source 120 to output node N5, and a second drive voltage fine-tuning switch 345-2 (one or more switches connected in parallel with switches B1, B2, B3) that supports current sinking from node N5 to ground reference potential 199.

[0086] Typically, as their names suggest, the temperature compensation circuit 330 and the temperature fine-tuning switch 335 provide temperature compensation to the output signal 123 to generate the output signal 123-1.

[0087] For example, as previously discussed, based on the control input 331 from the temperature compensation circuit 330, the temperature fine-tuning switch 335-1 can be configured to source a compensation current to the output signal 123 to generate the output signal 123-1. Furthermore, based on the control input 331 from the temperature compensation circuit 330, the temperature fine-tuning switch 335-2 can be configured to sink current into the output signal 123 to generate the output signal 123-1.

[0088] Furthermore, as their names suggest, the drive voltage compensation circuit 340 and the drive voltage fine-tuning switch 345 provide drive voltage compensation to the output signal 123 to generate the output signal 123-1. For example, based on the control input 341 from the drive voltage compensation circuit 340, the drive voltage fine-tuning switch 345-1 can be configured to source supplementary current to the output signal 123 to generate the output signal 123-1. Additionally, based on the control input 341 from the drive voltage compensation circuit 340, the drive voltage fine-tuning switch 345-2 can be configured to sink current from the output signal 123 to generate the output signal 123-1.

[0089] Furthermore, in this example, circuit 100-5 includes a temperature sensor circuit 510. The temperature sensor circuit 510 monitors the temperature (TEMP) associated with switch 132 or the corresponding semiconductor chip 202 or any suitable circuit. Based on the detected temperature, the temperature sensor circuit 510 generates a corresponding temperature signal 521. In one example, the temperature signal 521 is a voltage (VTEMP) whose magnitude varies according to the magnitude of the detected temperature. The magnitude of the voltage associated with the temperature signal 521 can vary by any suitable amount, such as 8 millivolts per degree Celsius or other suitable amount.

[0090] As further illustrated, temperature compensation circuitry 330 (e.g., including an analog-to-digital converter or other suitable entity) converts the received temperature signal 521 into a control input 331 for controlling the operation of temperature fine-tuning switch 335. Based on the activation of temperature fine-tuning switch 335 controlled via control input 331, temperature compensation circuitry 330 provides temperature compensation to output signal 123 to generate output signal 123-1. In other words, temperature compensation circuitry 330 controls temperature fine-tuning switch 335 to sink or source current relative to output signal 123 to provide temperature compensation and generate output signal 123-1.

[0091] Furthermore, in this example, circuit 100-5 includes a drive voltage compensation circuit 340. The drive voltage compensation circuit 340 receives a control signal 101 applied to switch 131. As previously discussed, based on the magnitude of the control signal 101, the drive voltage compensation circuit 340 provides compensation to output signal 123 to produce a compensated output signal 123-1. For example, as further shown, the drive voltage compensation circuit 340 (e.g., an analog-to-digital converter or other suitable entity) converts the received control signal 101 into a control input 341 for controlling the operation of drive voltage fine-tuning switch 345. Based on the activation of drive voltage fine-tuning switch 345 controlled via control input 341, the drive voltage compensation circuit 340 provides drive voltage compensation to output signal 123 to produce output signal 123-1. In other words, the drive voltage compensation circuit 340 controls the drive voltage fine-tuning switch 345 to sink or source current relative to output signal 123 to provide drive voltage compensation.

[0092] Figure 6 A more detailed example of the temperature compensation circuit 330 is shown in the figure. Figure 7 A more detailed example of the drive voltage compensation circuit 340 is shown in the figure.

[0093] Figure 6 This is an example diagram illustrating the implementation of the temperature compensation circuit discussed in this article.

[0094] In this example, circuit 100-6 also includes a reference voltage generator 610. As shown, the reference voltage generator 610 generates different reference voltages, such as reference voltages REF_125 (corresponding to 125 degrees Celsius), ..., REF_30 (corresponding to 30 degrees Celsius), REF_20 (corresponding to 20 degrees Celsius), ..., REF_M40 (corresponding to minus 40 degrees Celsius).

[0095] The temperature compensation circuit 330, which generates the control signal 331 or control input, can be configured to include multiple comparators, such as comparator C14, ..., comparator C11, comparator C21, ..., comparator C24. In one example, the combination of comparators is an analog-to-digital converter that generates the corresponding control input 331 to the temperature fine-tuning switch 335.

[0096] As shown, each of the comparators receives a corresponding threshold level (reference voltage) generated by the reference voltage generator 610. Each of the comparators also receives a temperature signal 521. As its name suggests, the comparator compares the received temperature signal 521 with its corresponding received reference voltage to generate a corresponding control signal indicating whether to activate the corresponding switch.

[0097] More specifically, comparator C14 compares the received temperature signal 521 with the reference voltage REF_125 to generate a control signal 331-14 for controlling switch 335-14; ...; comparator C11 compares the received temperature signal 521 with the reference voltage REF_30 to generate a control signal 331-11 for controlling switch 335-11; comparator C21 compares the received temperature signal 521 with the reference voltage REF_20 to generate a control signal 331-21 for controlling switch 335-21; ...; comparator C24 compares the received temperature signal 521 with the reference voltage REF_M40 to generate a control signal 331-24 for controlling switch 335-24.

[0098] Therefore, the control input 331, which is output from the temperature compensation circuit 330 and input to the corresponding switch 335, can be configured to include control signals 331-14 generated by comparator C14, ..., control signals 331-11 generated by comparator C11, control signals 331-21 generated by comparator C21, ..., control signals 331-24 generated by comparator C24.

[0099] As further shown, the first switch 335-1 includes a switch sequence comprising switches 335-11 to 335-14. The second switch 335-2 includes a switch sequence comprising switches 335-21 to 335-24. As previously discussed, the first and second switches may comprise any number of switches.

[0100] For each corresponding comparator, when the magnitude of the received signal is greater than the corresponding reference threshold level at the inverting input node of the given comparator, the comparator activates the corresponding switch to inject or source current relative to node N5.

[0101] In this example, the temperature compensation circuit 330 activates a different number of first switches 335-1 according to the corresponding first temperature range (25 degrees Celsius to 125 degrees Celsius) where the temperature signal 521 is located. Note that each corresponding circuit path (associated with switches 335-11...335-14 that draw current from voltage source 120) can be configured to provide a predetermined amount of current to node N5. Note that each corresponding circuit path (associated with switches 335-21...335-24 that sink current to ground) can be configured to sink a predetermined amount of current from node N5 to ground reference potential 199.

[0102] For example, the higher the detected temperature TEMP is relative to a threshold (e.g., 25 degrees Celsius), the more switches 335-1 (e.g., one or more of switches 335-11, ..., switches 335-14) are activated to provide compensation by source current from voltage source 120 to node N5.

[0103] Conversely, the more the detected temperature is below the threshold (e.g., 25 degrees Celsius), the more switches 335-2 (e.g., one or more of switches 335-21, ..., switches 335-24) are activated to provide compensation by injecting current from node N5.

[0104] Note that the number of comparators and their corresponding source and sink current paths can vary depending on the application.

[0105] Therefore, the examples in this document include a temperature compensation circuit 330, which is operable to: i) receive a temperature value (temperature signal 521) generated by a temperature sensor circuit 510 (e.g., disposed on or near a semiconductor chip including a second switch 132), and ii) adjust the magnitude of an output signal 123 according to the magnitude of the received temperature value (temperature signal 521) to produce a compensated output signal 123-1.

[0106] According to another example, such as Figure 6 As shown, the temperature compensation circuit 330 can be configured to: under a first condition where the temperature value is above a threshold level (e.g., 25 degrees Celsius), supply supplementary current from the voltage source 120 to node N5 to generate an output signal 123-1. The temperature compensation circuit 330 can also be configured to: under a second condition where the temperature value is below the threshold level (e.g., 25 degrees Celsius), inject current from node N5 into the ground reference potential 199 to generate the output signal 123-1.

[0107] In one example, if the magnitude of the temperature signal 521 falls between the reference voltage REF_30 and the reference voltage REF_20 (meaning the temperature signal 521 is approximately 25 degrees Celsius), neither switch 335-1 nor switch 335-2 will be activated. In such a case, the output signal 123 is not compensated for by sinking or sourcing current to produce the final output signal 123-1.

[0108] Figure 7 This is an example diagram illustrating the implementation of the gate drive compensation circuit as discussed in this article.

[0109] As shown in this example, the drive voltage monitor 150-7 receives the control signal 101 and converts it into a control signal 103.

[0110] Furthermore, in this example, circuit 100-7 includes a reference voltage generator 710. As shown, the reference voltage generator 710 generates different reference voltages, such as reference voltage REF_5P5, ..., reference voltage REF_5P1, reference voltage REF_4P9, ..., reference voltage REF_4P5.

[0111] The drive voltage compensation circuit 340 can be configured to include multiple comparators, such as comparator C34, ..., comparator C31, comparator C41, ..., comparator C44. In one example, the combination of comparators is an analog-to-digital converter that generates the corresponding control input 341.

[0112] As shown, each of the comparators receives a corresponding threshold level (reference voltage) generated by the reference voltage generator 710. Each of the comparators also receives a control signal 103 generated by the drive voltage monitors 150-7. As its name suggests, the comparator compares the received signal 103 (e.g., proportional to the magnitude of the control signal 101) with its corresponding received reference voltage to generate a corresponding control signal indicating whether the corresponding switch is activated.

[0113] More specifically, comparator C34 compares the received control signal 103 with the reference voltage REF_5P5 to generate control signal 341-14; ...; comparator C31 compares the received control signal 103 with the reference voltage 5P1 to generate control signal 341-11; comparator C41 compares the control signal 103 with the reference voltage REF_4P9 to generate control signal 341-21; ...; comparator C44 compares the received control signal 103 with the reference voltage REF_4P5 to generate control signal 341-24.

[0114] The control input 341 output from the drive voltage compensation circuit 340 can be configured to include control signals 341-14 generated by comparator C34 controlling the corresponding switch 345-14, ..., control signals 341-11 generated by comparator C31 controlling switch 345-11, control signals 341-21 generated by comparator C41 controlling switch 345-21, ..., and control signals 341-24 generated by comparator C44 controlling switch 345-24.

[0115] As further shown, the first switch 345-1 includes a switch sequence comprising switches 345-11 to 345-14. The second switch 345-2 includes a switch sequence comprising switches 345-21 to 345-24.

[0116] For each corresponding comparator, when the magnitude of the received signal 103 is greater than the corresponding reference threshold level at the inverting input node, the comparator activates the corresponding switch to inject or source current relative to node N5.

[0117] In this example, the drive voltage compensation circuit 340 activates a different number of first switches 345-1 according to the corresponding first drive voltage range (e.g., between 5 volts and 5.5 volts).

[0118] For example, the larger the magnitude of the detected control signal 101 relative to a threshold (e.g., 5 volts DC), the more switches 345-1 (e.g., one or more of switches 345-11, ..., 345-14) are activated to provide compensation by drawing current from voltage source 120 to node N5. Conversely, the more the magnitude of the detected control signal 101 is below the threshold (e.g., 5 volts DC), the more switches 345-2 (e.g., one or more of switches 345-21, ..., 345-24) are activated to provide compensation by drawing current from node N5.

[0119] Therefore, the examples herein include a drive voltage compensation circuit 340, which is operable to: i) receive a control signal 101 converted into a signal 103, and ii) adjust the magnitude of an output signal 123 according to the magnitude of the received control signal 103 to generate a compensated output signal 123-1.

[0120] Note that the number of comparators and their corresponding source and sink current paths can vary depending on the application.

[0121] According to another example, such as Figure 7 As shown, the drive voltage compensation circuit 340 can be configured to: under a first condition where the magnitude of the control signal 101 (also referred to as the drive voltage) is higher than a threshold level (e.g., 5 volts), source supplementary current from the voltage source 120 to node N5 to generate the output signal 123-1. The drive voltage compensation circuit 340 can be configured to: under a second condition where the magnitude of the control signal 101 is lower than a threshold level (e.g., 5 volts DC), inject supplementary current from node N5 into the ground reference potential 199 to generate the output signal 123-1.

[0122] In one example, if the magnitude of control signal 103 falls between the reference voltage REF_4P9 (associated with 4.9 volts DC) and the reference voltage REF_5P1 (associated with 5.1 volts DC) (meaning the magnitude of control signal 103 is approximately 5 volts DC), then neither switch 345-1 nor switch 345-2 will be activated. In such a case, no current is injected or siphoned to compensate for output signal 123 to produce the final output signal 123-1.

[0123] Therefore, the drive voltage compensation circuit as discussed herein can be configured to: i) receive a drive voltage value, such as control signal 101, and ii) adjust the output signal 123 according to the received drive voltage value to generate a compensated output signal 123-1.

[0124] Furthermore, according to the example above, the drive voltage compensation circuit 340 is operable to: source supplementary current from voltage source 120 to N5 under a first condition where the magnitude of the drive voltage value is higher than a threshold level (e.g., 5 volts or other suitable value). The drive voltage compensation circuit 340 is operable to: inject supplementary current from node N5 to ground reference potential 199 under a second condition where the magnitude of the drive voltage value is lower than a threshold level (e.g., 5 volts or other suitable value).

[0125] Figure 8 This is an example diagram illustrating the implementation of the temperature compensation circuit and gate drive compensation circuit for controlling the sensing of the transistor, as discussed herein.

[0126] In this example, compensation circuit 150-2 (also referred to as a signal generator) uses temperature information (e.g., digital temperature signal 521-1 and digital control signal 101-1) as the basis for providing compensation adjustments to the magnitude of control signal 102 to generate control signal 102-1. Compensation circuit 150-2 can be configured to apply control signal 102-1 to the gate node G of switch 132. This reduces variations in the sense FET current (also referred to as iS), which are then reflected in a reduced variation in the current monitoring output (output signal 123), thus achieving good accuracy. In other words, Figure 8 The circuit 100-8 in the middle implements the corresponding compensation circuit 810 to provide compensation, instead of applying temperature compensation and drive voltage compensation via the current injected or sourced relative to the output signal 123 as previously discussed.

[0127] In one example, the compensation circuit 810 includes one or more of a temperature sensor circuit 510, a signal converter circuit 830 such as an analog-to-digital converter or other suitable circuit, a signal converter circuit 840 such as an analog-to-digital converter or other suitable circuit, and compensation circuits 150-2 to appropriately adjust the magnitude of the control signal 102-1 applied to the gate node of switch 132 such that the output signal 123 generated by circuit 100-8 and output from node N5 more accurately indicates the magnitude of the first current iL through switch 131.

[0128] Therefore, the circuits discussed herein can be configured to include a signal generator (e.g., signal converter circuit 830, signal converter circuit 840, and compensation circuit 150-2) operable to: i) receive a first control signal 101 applied to the first switch 131, ii) receive a temperature signal 521 indicating the temperature of the second switch 132 or the corresponding semiconductor chip 202, iii) generate a drive signal (control signal 102-1) based on the first control signal 101 and the temperature signal 521, and iv) apply the resulting drive signal 102-1 to the gate node G of the second switch 132.

[0129] Therefore, the gate node G of switch 131 receives control signal 101. As previously discussed, the first control signal 101 controls the operation of switch 131 between an on state and an off state. The control signal 101 applied to switch 131 controls the magnitude of the resistance between the drain node D and the source node S of the first switch 131. Compensation circuit 150-2 is operable to: i) receive control signal 101-1 derived from the first control signal 101, which may be a digital signal indicating the magnitude of the first control signal 101; ii) receive temperature signal 521-1 indicating the temperature of the second switch 132 or semiconductor chip 202; iii) generate an adjusted drive signal 102-1 based on control signal 101-1 and temperature signal 521-1; and iv) apply drive signal 102-1 to the gate node G of the second switch 132 to provide compensation as discussed herein.

[0130] In this example, the adjusted drive signal 102-1 provides temperature compensation and drive voltage compensation to produce an output signal 123 that more accurately indicates the magnitude of the current iL passing through switch 131.

[0131] Figure 9 This is an example diagram illustrating the implementation of the gate drive compensation circuit and temperature compensation circuit as discussed in this article.

[0132] In this example, circuit 100-9 uses temperature change information to adjust the ratio of the sensing FET (switch 132) to compensate for the change. Circuit 100-9 also uses gate drive change information to adjust the ratio of the sensing FET to compensate for the change. This reduces the variation in the sensing FET current iS, which is reflected in a smaller variation in the current monitoring output 123, thereby achieving good accuracy of the current monitoring output 123.

[0133] More specifically, the current monitor circuit 108 includes a temperature trimming switch circuit (also known as a TEMP TRIM) 911, which includes, for example, one or more temperature trimming switches connected in parallel with the second switch 132. Furthermore, the current monitor circuit 108 includes a drive voltage trimming switch circuit (also known as a VDRV TRIM) 912, which includes one or more drive voltage trimming switches connected in parallel with the second switch 132. Switch circuits 911 and 912 are part of a current mirror circuit, for example, including switches 131 and 132.

[0134] In one example, the compensation circuit 910 includes one or more of the following: temperature sensor circuit 510, signal converter circuit 830 such as an analog-to-digital converter, signal converter circuit 840 such as an analog-to-digital converter, temperature fine-tuning switch circuit 911 (e.g., one or more switches connected in parallel with switch 132), and drive voltage fine-tuning switch circuit 912 (e.g., one or more switches connected in parallel with switch 132).

[0135] As further shown, the bit settings in temperature signal 521-1 are used to control the operation of temperature fine-tuning switch circuit 911. For example, depending on the temperature, in order to provide temperature compensation and adjustment for current iS as discussed herein, signal converter circuit 830 controls temperature fine-tuning switch circuit 911 to source an appropriate amount of supplementary current (also called compensation current) from node N2 to node N6, thereby adjusting the magnitude of signal iS supplied to node N6 and converted into output signal 123.

[0136] As further shown, the setting of bits in control signal 101-1 is used to control the operation of drive voltage switching circuit 912. For example, in order to provide drive voltage compensation and adjustment for current iS according to the magnitude of control signal 101 as indicated by control signal 101-1, signal converter 840 controls drive voltage fine-tuning switching circuit 912 to source an appropriate amount of supplementary current (also called compensation current) from node N2 to node N6, thereby adjusting the magnitude of signal iS supplied to node N6.

[0137] Figure 10 This is an example diagram illustrating how a resistance path can be implemented using different types of resistive materials with different temperature coefficients, as discussed in this paper.

[0138] In this example, circuit 100-10 uses the temperature coefficient gradient difference between the two resistors in the current mirror to achieve temperature correction associated with the current monitor output. This involves changing the gate drive voltage of the sensing FET (switch 132) relative to the gate drive of the power FET (switch 131) in a manner as previously discussed. Furthermore, circuit 100-10 can be configured to include a signal converter 1040 that digitizes the received control signal 101 into a control signal 101-1. The control signal 101-1 is used to control the state of the corresponding drive voltage fine-tuning switch associated with the drive voltage fine-tuning switch circuit (also known as VDRV TRIM) 1045.

[0139] For example, as previously discussed, if control signal 101 is greater than 5 volts, signal converter 1040 controls one or more switches in switching circuit 1045-1 to be turned on to supply a first compensation current from voltage source 120 to node N5. Conversely, if control signal 101 is less than 5 volts, signal converter 1040 controls one or more switches in switching circuit 1045-2 to be turned on to inject a second compensation current from node N5 to ground reference potential 199.

[0140] In this case, the control of the corresponding drive voltage fine-tuning switch circuit 1045 will fine-tune the magnitude of the output signal 123 to generate the output signal 123-1, so that the output signal 123-1 more accurately indicates the magnitude of the first current iL through the switch 131.

[0141] More specifically, the current monitoring circuit 108 includes a first resistor, such as resistor RA1 and resistor RB1, made using a first material (temperature coefficient TC1), such as a low-temperature coefficient resistive material.

[0142] The current monitoring circuit 108 also includes a second resistor made of a second material (temperature coefficient TC2), such as a high temperature coefficient resistive material, for example, resistor RA2 and resistor RA3.

[0143] Therefore, in one example, the magnitude of the first temperature coefficient TC1 is smaller than the magnitude of the second temperature coefficient TC2.

[0144] As shown, resistors are positioned in the current mirror circuit of the current monitor circuit 108. Each of the resistors supports temperature compensation, depending on the corresponding resistance settings that vary with temperature. For example, resistors RA1, RA2, and RA3 alter the temperature gradient of the corresponding current supplied from voltage source 120 through activated switches A1, A2, and A3. Resistors RB1, RB2, and RB3 alter the temperature gradient of the corresponding current flowing from the corresponding node into the ground reference potential 199.

[0145] Furthermore, in this example, switch 131 has a first RDSon temperature coefficient; and switch 132 has a second RDSon temperature coefficient. The magnitude of the first ratio of the second temperature coefficient TC2 to the first temperature coefficient TC1 is substantially equal to the magnitude of the second ratio of the second RDSon temperature coefficient to the first RDSon temperature coefficient. In this case, the first resistive material (with temperature coefficient TC1) and the second resistive material (with temperature coefficient TC2) are used to provide temperature compensation, converting the second current iS into an output signal 123 that accurately indicates the magnitude of the first current iL.

[0146] As further shown, circuit 100-10 includes a drive voltage fine-tuning circuit 1045. Drive voltage fine-tuning circuit 1045 includes a switching circuit 1045-1 (one or more switches) connected in parallel with switches A1, A2, and A3. Furthermore, drive voltage fine-tuning circuit 1045 includes a switching circuit 1045-2 (e.g., one or more switches) connected in parallel with switches B1, B2, and B3. Additionally, circuit 100-10 includes a signal converter 1040 that receives a control signal 101 and converts it into a digital control signal 101-1, which controls the operation of the respective switching circuits 1045-1 and 1045-2 in a manner similar to that previously discussed. However, in this example, a resistor RX disposed in the circuit path provided by switching circuit 1045-1 modifies the temperature gradient of the source current supplied from voltage source 120 through one or more circuit paths (including a resistor RX manufactured using a temperature coefficient TC2). The resistor RY, located in the circuit path provided by the switching circuit 1045-2, modifies the temperature gradient of the current flowing from node N5 through one or more circuit paths (including the resistor RY manufactured using a temperature coefficient TC2) to the ground reference potential 199. In this case, temperature correction is performed on the source compensation current supplied by the switching circuit 1045-1 using a resistive material with a temperature coefficient TC2; temperature correction is also performed on the sink compensation current supplied by the switching circuit 1045-2 using a resistive material with a temperature coefficient TC2.

[0147] Figure 11These are example diagrams illustrating example computer hardware and software operable to perform manufacturing operations as discussed herein.

[0148] Note that any resources discussed herein (e.g., resources associated with manufacturer 175, etc.) may be configured to include computer processor hardware and / or corresponding executable instructions to perform the various operations discussed herein. In one example, manufacturer 175 includes any equipment (hardware, machinery, etc.) for producing the apparatus (e.g., circuit 100) discussed herein. In one example, manufacturer 175 controls the operation of manufacturing equipment 176 to produce circuit 100 as discussed herein.

[0149] For example, as shown, the computer system 1150 of this example includes an interconnect 1111 that couples a processor 1113 (computer processor hardware), an I / O interface 1114, a communication interface 1117, and a computer-readable storage medium 1112, such as a non-transitory type of medium or computer-readable storage hardware (which may be any suitable type of resource capable of storing and / or retrieving digital information).

[0150] I / O interface 1114 supports connections to storage 1180 and input resources.

[0151] The computer-readable storage medium 1112 can be any hardware storage device, such as a memory, optical storage, hard disk drive, floppy disk, etc. In one embodiment, the computer-readable storage medium 1112 (computer-readable storage hardware) stores instructions and / or data.

[0152] As shown, the computer-readable storage medium 1112 may be encoded with a corresponding manufacturer application 175-1 in one or more network nodes to perform any of the operations discussed herein.

[0153] During one example operation, processor 1113 accesses computer-readable storage medium 1112 via interconnect 1111 to initiate, run, execute, interpret, or otherwise perform instructions in manufacturer application 175-1 stored on computer-readable storage medium 1112. Execution of manufacturer application 175-1 produces manufacturer process 175-2 to perform any operations and / or processes as discussed herein.

[0154] Those skilled in the art will understand that computer system 1150 may include other processes and / or software and hardware components, such as an operating system that controls the allocation and use of hardware resources to execute manufacturer application 175-1.

[0155] Depending on the implementation, note that the computer system can reside in any of various types of devices, including but not limited to mobile computers, personal computer systems, wireless devices, wireless access points, base stations, telephone devices, desktop computers, laptop computers, notebook computers, netbook computers, mainframe computers, handheld computers, workstations, network computers, application servers, storage devices, consumer electronic devices (e.g., cameras, camcorders, set-top boxes, mobile devices, video game consoles, handheld video game devices), peripheral devices (e.g., switches, modems, routers, set-top boxes), content management devices, handheld remote control devices, and any type of computing or electronic device. The computer system 1150 can reside anywhere or be included in any suitable resource in any network environment to perform the functions discussed herein.

[0156] Now will be via Figure 12 Flowchart 1200 in the diagram below discusses the functions supported by different resources. Note that the steps in the flowchart below can be performed in any suitable order.

[0157] Figure 12 This is an example diagram illustrating the method discussed in this article.

[0158] In processing operation 1210, the manufacturer 175 receives the first switch 131 manufactured via a first semiconductor technology.

[0159] In processing operation 1220, the manufacturer 175 receives the second switch 132 manufactured via a second semiconductor technology.

[0160] In processing operation 1230, the fabricator 175 fabricates the current monitor circuit 108 to include a second switch 132. The current monitor circuit 108 is fabricated to provide a second current through the second switch as a mirror image of a first current through the first switch.

[0161] In processing operation 1240, the manufacturer 175 manufactures the current monitor circuit 108 to include compensation circuitry (e.g., temperature compensation circuitry 330, drive voltage compensation circuitry 340, and / or signal converter circuitry 150). The compensation circuitry is configured to adjust the magnitude of the output signal 123 derived from the second current iS such that the magnitude of the output signal 123 represents the magnitude of the first current iL passing through the first switch 131.

[0162] Figure 13 This is an example diagram illustrating the method discussed in this article.

[0163] In processing operation 1310, circuit 100 (e.g., device or other suitable entity) receives a first current iL through a first switch 131 manufactured via a first semiconductor manufacturing technique.

[0164] In processing operation 1320, circuit 100 controls the transmission of a second current iS through a second switch 132 manufactured via a second semiconductor manufacturing technology. The second current iS through the second switch 132 mirrors the first current iL through the first switch 131.

[0165] Again, it should be noted that the techniques described herein are well-suited for use in current sensing applications where current mirroring is implemented to generate a corresponding output signal indicating the current flowing through a power switch. However, it should be understood that the content disclosed herein is not limited to such applications, and the techniques discussed herein are also well-suited for other applications.

[0166] Although the invention has been specifically shown and described with reference to preferred aspects thereof, those skilled in the art will understand that various changes in form and detail may be made without departing from the spirit and scope of the invention as defined by the appended claims. Such variations are intended to be covered by the scope of this application. Therefore, the foregoing description in this disclosure is not intended to be limiting. Rather, any limitation on the invention is set forth in the appended claims.

Claims

1. A device for current monitoring, comprising: The first switch was manufactured using first semiconductor manufacturing technology; A second switch manufactured using a second semiconductor manufacturing technology; as well as A current monitoring circuit, the current monitoring circuit including a second switch, the current monitoring circuit operating to provide a second current through the second switch as a mirror image of a first current through the first switch.

2. The apparatus according to claim 1, wherein, The magnitude of the second current iS is proportional to the magnitude of the first current iL, such that iS = (1 / N) * iL, where N is the ratio value.

3. The apparatus according to claim 1, further comprising: The first node is used to receive a first control signal that controls the operation of the first switch, and the controlled operation of the first switch controls the magnitude of a first resistance between the drain node and the source node of the first switch. as well as A signal converter operates to convert a first control signal received at the first node into a second control signal for controlling the operation of the second switch, the second control signal being used to control a second resistance between the drain node and the source node of the second switch such that the magnitude of the second current through the second switch is proportional to the magnitude of the first current through the first switch.

4. The apparatus according to claim 3, wherein, The second control signal is applied to the gate node of the second switch.

5. The apparatus according to claim 3, wherein, The signal converter includes a resistor divider circuit that operates to generate a second control signal whose magnitude is proportional to the magnitude of the first control signal.

6. The apparatus according to claim 3, wherein, The first control signal varies within a first voltage range; and The signal converter operates to control the magnitude of the second control signal within a second voltage range, which is smaller than the first voltage range.

7. The apparatus according to claim 1, wherein, The first switch is a power switch manufactured on a first semiconductor chip, and the first switch is manufactured according to MOSFET technology; and The second switch is manufactured on a second semiconductor chip, which is manufactured according to CMOS technology, and the second semiconductor chip is manufactured independently of the first semiconductor chip.

8. The apparatus according to claim 1, wherein, The current monitoring circuit operates to generate an output signal indicating the magnitude of the first current, and the device further includes: A temperature compensation circuit, which operates to: i) receive a temperature value generated by a temperature sensor circuit, which operates to monitor the temperature of a semiconductor chip including the second switch, and ii) adjust the magnitude of the output signal according to the magnitude of the temperature value.

9. The apparatus according to claim 1, wherein, The current monitoring circuit operates to generate an output signal indicating the magnitude of the first current based on the magnitude of the second current, and the device further includes: A temperature compensation circuit, which operates to: i) receive a temperature value indicating the temperature of the second switch, and ii) adjust the output signal according to the received temperature value.

10. The apparatus according to claim 9, wherein, The output signal is an output current, and the magnitude of the output current indicates the magnitude of the first current. The temperature compensation circuit operates such that, under a first condition where the temperature value is below a threshold level, current is injected from the output signal; and The temperature compensation circuit operates such that, under the second condition that the temperature value is higher than the threshold level, it generates current to the output signal.

11. The apparatus according to claim 1, wherein, The current monitoring circuit operates to generate an output signal indicating the magnitude of the first current based on the magnitude of the second current, and the device further includes: A drive voltage compensation circuit operates to: i) receive a drive voltage value indicating the drive voltage applied to the first switch, and ii) adjust the output signal according to the received drive voltage value.

12. The apparatus according to claim 11, wherein, The output signal is an output current, and the magnitude of the output current indicates the magnitude of the first current. The drive voltage compensation circuit operates to: inject current into the output signal when the drive voltage value is lower than a threshold level (a first condition); and The drive voltage compensation circuit operates to: under the second condition that the magnitude of the drive voltage value is higher than the threshold level, generate current to the output signal.

13. The apparatus according to claim 1, further comprising: A signal generator that operates to: i) receive a first control signal applied to the first switch, ii) receive a temperature signal indicating the temperature of the second switch, iii) generate a second control signal based on the first control signal and the temperature signal, and iv) apply the second control signal to the gate node of the second switch.

14. The apparatus according to claim 1, further comprising: A first node is used to receive a first control signal, which is used to control the first switch. The control of the first switch is used to control the resistance between the source node and the drain node of the first switch. as well as A signal generator that operates to: i) receive a second control signal derived from the first control signal, the second control signal indicating the magnitude of the first control signal; ii) receive a temperature signal indicating the temperature of the second switch; iii) generate a third control signal based on a combination of the second control signal and the temperature signal; and iv) apply the third control signal to the gate node of the second switch.

15. The apparatus according to claim 1, wherein, The current monitoring circuit includes multiple switches connected in parallel with the second switch, the multiple switches including a third switch circuit and a fourth switch circuit, and the device further includes: A first signal converter operates to: i) receive a temperature signal indicating the temperature of the second switch, ii) convert the temperature signal into a first control signal applied to the third switch circuit; and The second signal converter operates to: i) receive a switch drive signal applied to the first switch, and ii) convert the switch drive signal into a second control signal applied to the fourth switch circuit.

16. The apparatus according to claim 15, wherein, The first control signal is used to provide temperature compensation associated with the generation of an output signal indicating the magnitude of the first current through the first switch, the output signal being derived from the second current; and The second control signal is used to provide drive voltage compensation associated with the generation of the output signal.

17. The apparatus according to claim 1, wherein, The current monitor circuit further includes a first resistor made of a first resistive material and a second resistor made of a second resistive material, the first resistor and the second resistor being disposed in a current mirror circuit of the current monitor circuit; Wherein, the first resistive material has a first resistor temperature coefficient; Wherein, the second resistive material has a second resistor temperature coefficient; Wherein, the first switch has a first RDSon temperature coefficient; The second switch has a second RDSon temperature coefficient; Wherein, the first ratio of the temperature coefficient of the second resistor to the temperature coefficient of the first resistor is substantially equal to the second ratio of the temperature coefficient of the second RDSon to the temperature coefficient of the first RDSon.

18. The apparatus according to claim 17, wherein, The first and second resistive materials are used to provide temperature compensation for converting the second current into an output signal indicating the magnitude of the first current.

19. The apparatus according to claim 18, wherein, The temperature coefficient of the first resistor is smaller than that of the second resistor.

20. A current monitoring method, comprising: Receives a first current through a first switch manufactured using a first semiconductor manufacturing technology; as well as Controls the transmission of a second current through a second switch manufactured via a second semiconductor manufacturing technology, the second current being mirrored through a first current of the first switch via a compensation circuit.

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