Plasma processing apparatus

Abstract

A plasma processing apparatus is provided. The plasma processing apparatus comprises: a dual chamber system comprising a first chamber and a second chamber fluidly connected to the first chamber through an opening; a first gas injector configured to supply a first gas to the first chamber; the grating is positioned at the opening between the first chamber and the second chamber; a second chamber baffle; a second gas injector configured to inject a second gas into the second chamber; and a wafer stage inside the second chamber and having a wafer support surface wherein the second chamber baffle is configured to transition between an open state in which the grille is in fluid connection with the second chamber and a closed state in which the grille is not in fluid connection with the second chamber.

Description

Cross Reference to Related Applications

[0001] This application is based on and claims priority to Korean Patent Application No. 10-2024-0064143, filed on May 16, 2024, in the Korean Intellectual Property Office, the disclosure of which is incorporated by reference herein in its entirety. TECHNICAL FIELD

[0002] The present inventive concept relates to a plasma processing apparatus, and more particularly, to a plasma processing apparatus using a dual chamber system. BACKGROUND

[0003] One example of a process that occurs during the manufacturing of semiconductor devices is a plasma process, such as plasma-induced deposition, plasma etching, and plasma cleaning. Recently, as semiconductor devices become smaller and more highly integrated, the influence of a slight error in a plasma process on the quality of a semiconductor product has also increased. Accordingly, various techniques for precisely performing a plasma process have been proposed. SUMMARY

[0004] The present inventive concept provides a plasma processing apparatus having improved reliability.

[0005] According to an aspect of the present inventive concept, there is provided a plasma processing apparatus including: a dual chamber system including a first chamber and a second chamber, the second chamber being fluidly connected with the first chamber through an opening between the first chamber and the second chamber; a first gas injector configured to supply a first gas to the first chamber; a grid located at the opening between the first chamber and the second chamber, the grid extending along the opening and having a first side facing the first chamber and a second side facing the second chamber; a second chamber baffle located at the second side of the grid; a second gas injector configured to inject a second gas into the second chamber; and a wafer stage located inside the second chamber and having a wafer support surface, wherein the second chamber baffle is configured to be switched between an open state in which the grid is fluidly connected with the second chamber and a closed state in which the grid is not fluidly connected with the second chamber.

[0006] According to another aspect of the inventive concept, there is provided a plasma processing apparatus, including: a first chamber configured to form a plasma; a second chamber fluidly connected with the first chamber through an opening between the first chamber and the second chamber and configured to perform a reactive ion etching; a grid located at the opening between the first chamber and the second chamber, the grid extending along the opening and having a first side facing the first chamber and a second side facing the second chamber; a first gas injector configured to supply a first gas to the first chamber; a second gas injector configured to supply a second gas to the second chamber; a wafer stage located inside the second chamber and having a wafer support surface; a stage voltage source; a first chamber shutter located at the first side of the grid; and a second chamber shutter located at the second side of the grid, wherein the stage voltage source is configured to apply a voltage to the wafer stage when the second gas is injected into the second chamber, and the first chamber shutter and the second chamber shutter are each configured to move in a direction parallel to a direction in which the grid extends, between an open state in which the grid is fluidly connected with the first chamber and the second chamber, and a closed state in which the grid is not fluidly connected with the first chamber and the second chamber.

[0007] According to another aspect of the inventive concept, there is provided a plasma processing apparatus, including: a dual chamber system including a first chamber configured to form a plasma and a second chamber located at a side of the first chamber, fluidly connected with the first chamber through an opening between the first chamber and the second chamber, and configured to perform a reactive ion etching, a grid located at the opening between the first chamber and the second chamber, the grid extending along the opening, a first gas injector configured to supply a first gas to the first chamber, a second gas injector configured to supply a second gas to the second chamber, a wafer stage located inside the second chamber and having a wafer support surface, a first chamber shutter located between the grid and the first chamber, a second chamber shutter located between the grid and the second chamber, a stage voltage source, a plurality of radio frequency (RF) coils located at an outer wall of the first chamber, and an RF power supply unit configured to supply power to the plurality of RF coils, wherein the stage voltage source is configured to apply a voltage to the wafer stage when the second gas is injected into the second chamber, the first chamber shutter and the second chamber shutter are each configured to slide in a direction parallel to a direction in which the grid extends, between an open state in which the grid is fluidly connected with the first chamber and the second chamber, and a closed state in which the grid is not fluidly connected with the first chamber and the second chamber, the second chamber shutter includes a first surface facing the second chamber and including an oxide film, and a second surface opposite the first surface and including a metal film, the first gas injector is further configured to supply the first gas only when the first chamber shutter and the second chamber shutter are in the open state, and the second gas injector is further configured to supply the second gas only when the first chamber shutter and the second chamber shutter are in the closed state. BRIEF DESCRIPTION OF DRAWINGS

[0008] The embodiments will become more fully understood from the detailed description given herein below and the accompanying drawings, wherein:

[0009] Figure 1 is a cross-sectional view of a plasma processing apparatus having a dual chamber according to an embodiment, in which a chamber shutter is in an open state in the plasma processing apparatus;

[0010] Figure 2 is a cross-sectional view of a plasma processing apparatus having a dual chamber according to an embodiment, in which a chamber shutter is in a closed state in the plasma processing apparatus;

[0011] Figure 3 is a cross-sectional view of a plasma processing apparatus having a dual chamber according to an embodiment, Figure 2 is an enlarged cross-sectional view of region A of

[0012] Figure 4 is an enlarged cross-sectional view of region A of Figure 2 according to another embodiment;

[0013] Figure 5 is an enlarged cross-sectional view of region A of Figure 2 according to another embodiment;

[0014] Figure 6 is an enlarged view conceptually illustrating removal of re-deposited material in region B of Figure 2 ;

[0015] Figure 7 is a flowchart of a method of manufacturing a semiconductor device according to an embodiment, the method including a plasma process;

[0016] Figure 8 is a flowchart of detailed operations included in operation S30 of Figure 7 ;

[0017] Figure 9 is a configuration diagram illustrating each memory cell included in a memory cell array produced at least in part by a plasma processing apparatus according to an embodiment;

[0018] Figure 10 and Figure 11 is a conceptual diagram illustrating data stored according to a magnetization direction in a magnetic tunnel junction (MTJ) structure of a memory cell produced by a plasma processing apparatus according to an embodiment; and

[0019] Figure 12 is a conceptual diagram illustrating a magnetization direction according to a write operation in an MTJ structure of a memory cell produced by a plasma processing apparatus according to an embodiment. DETAILED DESCRIPTION

[0020] The embodiments set forth herein can have various modifications and various forms, and consequently, some embodiments will be shown in the drawings and will be described in detail in the detailed description. However, this is not intended to limit the inventive concept to particular disclosed forms. In addition, the embodiments described below are merely illustrative and various modifications can be made to the embodiments.

[0021] The use of any of the examples or illustrative terms herein is merely for explaining the inventive concept and, therefore, the scope of the inventive concept is not limited to the examples or illustrative terms. In determining the requirements of the inventive concept, the language of the claims should be interpreted.

[0022] Hereinafter, in the specification, a vertical direction can be defined as a Z direction, and first and second horizontal directions can each be defined as a horizontal direction perpendicular to the Z direction. The first horizontal direction can be referred to as X, and the second horizontal direction can be referred to as Y. A vertical level can refer to a height level in the vertical direction (Z). A horizontal width can refer to a length in the horizontal direction (X and / or Y), and a vertical length can refer to a length in the vertical direction (Z).

[0023] Throughout the specification, when a component is described as "including" a certain element or a group of elements, it should be understood that the component is only formed by the element or the group of elements, or the element or the group of elements can be combined with additional elements to form the component, unless the context clearly indicates otherwise. On the other hand, the term "consisting of" means that the component is only formed by the listed elements.

[0024] It will be understood that when referring to an element "connected" or "coupled" to another element or "on" another element, the element can be directly connected or coupled to the other element or directly on the other element, or there can be intervening elements. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, or "contacting" another element or "in contact" with another element (or any form of the word "contact"), there are no intervening elements at the point of contact.

[0025] As used herein, items described as being "fluidly connected" are configured such that a liquid or gas can flow or be transferred from one item to another.

[0026] The terms used herein (e.g., "same," "equal," etc.) when referring to characteristics such as orientation, layout, position, shape, size, composition, quantity, or other metrics, do not necessarily mean identical characteristics, but are intended to encompass nearly identical characteristics, including typical variations that can result from conventional manufacturing processes. The term "substantially" can be used herein to emphasize this meaning.

[0027] Numerals such as "first," "second," "third," etc. can simply be used as labels to certain elements, steps, etc., to distinguish them from one another. Terms described in the specification without the description of "first," "second," etc. can still be called "first" or "second" in the claims. In addition, terms cited with a specific numeral (e.g., "first") in a specific claim can be described with a different numeral (e.g., "second") in the specification or elsewhere.

[0028] Figure 1 is a cross-sectional view of a dual chamber with chamber baffle in an open state in a plasma processing apparatus according to an embodiment. Figure 2 is a cross-sectional view of a dual chamber with chamber baffle in a closed state in a plasma processing apparatus according to an embodiment.

[0029] Reference will be made together Figure 1 and Figure 2 Plasma processing apparatus 10 can include a dual chamber system 20. Dual chamber system 20 can include a first chamber 100 and a second chamber 200 arranged (e.g., positioned) on a side of first chamber 100. First chamber 100 and second chamber 200 can perform different tasks. In an embodiment, first chamber 100 can be a plasma chamber that forms a plasma. In an embodiment, second chamber 200 can be a process chamber. The process in the process chamber can be a process that produces a different plasma than the plasma produced in first chamber 100, a process that produces reactive ions, and / or a process that performs reactive ion beam etching by reactive ions. The plasma produced in first chamber 100 can be an inductively coupled plasma (ICP), and the plasma produced in second chamber 200 can be a capacitively coupled plasma (CCP). That is, the plasma produced in first chamber 100 can be different from the plasma produced in second chamber 200. First chamber 100 and second chamber 200 can be independently operated. That is, dual chamber system 20 can independently control the plasma in each of the two chambers, first chamber 100 and second chamber 200. First chamber 100 and second chamber 200 can have different sizes. First chamber 100 and second chamber 200 can include different materials. First chamber 100 and second chamber 200 can have a common opening such that first chamber 100 is fluidly connected to second chamber 200 through the opening.

[0030] The plasma processing apparatus 10 can include a first gas injection unit 110 (e.g., a gas injector). The first gas injection unit 110 can supply a first gas g_110 to the first chamber 100. The first gas g_110 can include at least one process gas (e.g., CF4, CH2F2, CH3F, CHF3, Cl2, Ar, or O2), other types of process gases, or a combination thereof. The first gas injection unit 110 can include a nozzle in fluid communication with a first gas source. A valve or other controller can regulate the flow of the first gas supplied by the first gas injection unit 110.

[0031] The plasma processing apparatus 10 can generate a first plasma PL1 from the first gas g_110 and can further include a plurality of radio frequency (RF) coils 130 disposed on or at an outer wall of the first chamber 100. That is, the RF coils 130 can be disposed to surround an outer peripheral surface of the first chamber 100. The plasma processing apparatus 10 can include an RF power supply unit 131 (e.g., an RF power source) that supplies power to the RF coils 130. Although the RF power supply unit 131 is shown connected to one RF coil 130 in the figure, the RF power supply unit 131 can be connected to each of the plurality of RF coils 130. Upon the RF power supply unit 131 applying power to the RF coils 130, the RF coils 130 can apply RF power to the first chamber 100 to generate the first plasma PL1 from the first gas g_110. The RF coils 130 can form a high frequency electric field that generates plasma from the first gas g_110 inside the first chamber 100. The RF power supply unit 131 can include a magnetic material. The magnetic material can uniformly control the distribution of the plasma generated by the RF coils 130. By adjusting the amount of current provided to the magnetic material, the distribution of the plasma can be controlled.

[0032] The plasma processing apparatus 10 can further include a first chamber baffle 120 disposed inside the first chamber 100. The first chamber baffle 120 will be described in detail along with a second chamber baffle 220 to be described below.

[0033] The plasma processing apparatus 10 can further include a grid 140 disposed or positioned between the first chamber 100 and the second chamber 200. The grid 140 can be a plasma grid. The grid 140 can be positioned to cover or fill an opening between the first chamber 100 and the second chamber 200. The grid 140 can have a first side facing the first chamber 100 and a second side facing the second chamber 200. The grid 140 can include a plurality of columns. Although for convenience, Figure 1 and Figure 2The grid 140 including three columns is shown, but the number of columns of the grid 140 is not limited to the number shown in the drawing. A plurality of grids 140 can be provided, in which a first set of the plurality of grids 140 can be arranged adjacent to the first chamber 100, and a second set of the plurality of grids 140 can be arranged adjacent to the second chamber 200. Further, a third set of the plurality of grids 140 can be arranged between the first set of the plurality of grids 140 and the second set of the plurality of grids 140. In an embodiment, the grids 140 can have substantially the same size as each other. Further, for the plurality of grids 140, the spacing or pitch between adjacent grids can be substantially the same. At least some of the grids 140 can be connected to different electrodes, respectively. In an embodiment, the grids 140 closest to the first chamber 100 can be connected to an anode. The grids arranged in the center (e.g., between the grids 140 closest to the first chamber 100 and the grids 140 closest to the second chamber 200) can be connected to a cathode. The grids 140 closest to the second chamber 200 can be grounded. The grids 140 can have a plurality of openings or cavities through which ion beams (to be described hereinafter) pass. The openings or cavities can have substantially the same size as each other. The cavities or openings can be arranged along substantially the same axis.

[0034] The plasma processing apparatus 10 can include a first chamber baffle 120 arranged between the grids 140 and the first chamber 100 (e.g., on a first side of the grids 140) and a second chamber baffle 220 arranged between the grids 140 and the second chamber 200 (e.g., on a second side of the grids 140). The first chamber baffle 120 and the second chamber baffle 220 can be formed to have substantially the same physical properties. The second chamber baffle 220 can include two dualized surfaces. In an embodiment, the second chamber baffle 220 can include a first surface facing the second chamber 200, and the first surface can include an oxide film. Further, the second chamber baffle 220 can include a second surface opposite the first surface, and the second surface can include a metal film. The two dualized surfaces of the second chamber baffle 220 can be applied in a similar manner to the first chamber baffle 120. Thus, by including the metal film, scattering of the reactive ion beams to be described hereinafter can be prevented. That is, the chamber baffle can prevent the reactive ion beams from penetrating the grids 140 and entering the first chamber 100.

[0035] The first chamber shutter 120 and the second chamber shutter 220 can each be transitioned between an open state and a closed state. For example, the shutters can move or slide in a direction parallel to the direction in which the grid 140 extends in a door-like manner. The first chamber shutter 120 and the second chamber shutter 220 can each move or slide between two different positions, where the first position corresponds to the open state and the second position corresponds to the closed state. The first chamber 100 and the second chamber 200 can each be in either the open state or the closed state depending on their positions. In an embodiment, as shown in FIG. 1A, the first chamber shutter 120 and the second chamber shutter 220 can be in the open state. Here, the open state refers to both sides of the grid 140 being open and the first chamber 100 and the second chamber 200 spatially corresponding to an open system (e.g., the first chamber 100 and the second chamber 200 are in fluid communication). That is, in the open state, the first plasma PL1 formed in the first chamber 100 can penetrate or pass through the grid 140 to the second chamber 200. In an embodiment, as shown in FIG. 1B, the first chamber shutter 120 and the second chamber shutter 220 can be in the closed state. Here, the closed state refers to both sides of the grid 140 being blocked and the first chamber 100 and the second chamber 200 spatially corresponding to closed systems (e.g., the first chamber 100 and the second chamber 200 are not in fluid communication) respectively. That is, in the closed state, the first plasma PL1 formed in the first chamber 100 cannot penetrate or pass through the grid 140 to the second chamber 200, and the second plasma PL2 including ions and the like formed in the second chamber 200 also cannot pass through the grid 140 to the first chamber 100. When the first chamber shutter 120 and the second chamber shutter 220 are closed, plasma control can be performed independently for each of the first chamber 100 and the second chamber 200. Figure 1 In an embodiment, as shown in FIG. 1A, the first chamber shutter 120 and the second chamber shutter 220 can be in the open state. Here, the open state refers to both sides of the grid 140 being open and the first chamber 100 and the second chamber 200 spatially corresponding to an open system (e.g., the first chamber 100 and the second chamber 200 are in fluid communication). That is, in the open state, the first plasma PL1 formed in the first chamber 100 can penetrate or pass through the grid 140 to the second chamber 200. In an embodiment, as shown in FIG. 1B, the first chamber shutter 120 and the second chamber shutter 220 can be in the closed state. Here, the closed state refers to both sides of the grid 140 being blocked and the first chamber 100 and the second chamber 200 spatially corresponding to closed systems (e.g., the first chamber 100 and the second chamber 200 are not in fluid communication) respectively. That is, in the closed state, the first plasma PL1 formed in the first chamber 100 cannot penetrate or pass through the grid 140 to the second chamber 200, and the second plasma PL2 including ions and the like formed in the second chamber 200 also cannot pass through the grid 140 to the first chamber 100. When the first chamber shutter 120 and the second chamber shutter 220 are closed, plasma control can be performed independently for each of the first chamber 100 and the second chamber 200. Figure 2 In an embodiment, as shown in FIG. 1A, the first chamber shutter 120 and the second chamber shutter 220 can be in the open state. Here, the open state refers to both sides of the grid 140 being open and the first chamber 100 and the second chamber 200 spatially corresponding to an open system (e.g., the first chamber 100 and the second chamber 200 are in fluid communication). That is, in the open state, the first plasma PL1 formed in the first chamber 100 can penetrate or pass through the grid 140 to the second chamber 200. In an embodiment, as shown in FIG. 1B, the first chamber shutter 120 and the second chamber shutter 220 can be in the closed state. Here, the closed state refers to both sides of the grid 140 being blocked and the first chamber 100 and the second chamber 200 spatially corresponding to closed systems (e.g., the first chamber 100 and the second chamber 200 are not in fluid communication) respectively. That is, in the closed state, the first plasma PL1 formed in the first chamber 100 cannot penetrate or pass through the grid 140 to the second chamber 200, and the second plasma PL2 including ions and the like formed in the second chamber 200 also cannot pass through the grid 140 to the first chamber 100. When the first chamber shutter 120 and the second chamber shutter 220 are closed, plasma control can be performed independently for each of the first chamber 100 and the second chamber 200.

[0036] The plasma processing apparatus 10 can include a second gas injection unit 210 that injects a second gas g_210 into the second chamber 200. The second gas g_210 can be separated into ions and electrons EL in the second chamber 200. The ions can be configured (e.g., adapted) to remove re-deposited metal separated from the wafer W for which ion beam etching has been performed by the first plasma PL1 generated in the first chamber 100. The second gas g_210 can include one of chlorine (Cl2), carbon fluoride (CF), hydrogen bromide (HBr), methanol, or a combination thereof. In an embodiment, the second gas g_210 can include at least one halogen element of Group 17. Details of removing re-deposited metal by ions will be described with reference to FIGS. 2A and 2B. Figure 6 Details of removing re-deposited metal by ions will be described with reference to FIGS. 2A and 2B.

[0037] The plasma processing apparatus 10 can include a wafer stage WS arranged inside the second chamber 200 and supporting the wafer W. The wafer stage WS can have a support surface that supports the wafer disposed thereon. Further, the plasma processing apparatus 10 can include a stage voltage application unit 400. The stage voltage application unit 400 can apply a voltage to the wafer stage WS when the second gas g_210 is injected into the second chamber 200. The stage voltage application unit 400 can be electrically connected to the wafer stage WS. The wafer stage WS can include an electrostatic chuck (ESC) or can be an electrostatic chuck (ESC) itself. An alternating current power source and a plurality of capacitors controlled by the stage voltage application unit 400 can be electrically connected to the wafer stage WS. The voltage applied to the wafer stage WS can provide energy to convert the second gas g_210, which will be described below, into a second plasma PL2, which is CCP.

[0038] The first gas g_110 supplied to the first chamber 100 can be converted into a first plasma PL1 by the RF coil 130, and the first plasma PL1 can be supplied to the second chamber 200 for ion beam etching of the wafer W. Ion beam-based sputter etching is an etching method that removes the wafer W with physical bonding force, and the material etched away can have a strong tendency to be re-deposited on the wafer W. Thus, the material etched away can be re-deposited on the sidewall of the magnetic tunnel junction (MTJ) film. When the material etched away is re-deposited on the MTJ film, an electrical short defect that electrically connects the upper layer to the lower layer can occur.

[0039] The second gas g_210 supplied to the second chamber 200 can be converted into a second plasma PL2. The second plasma PL2 can include ions and electrons EL, and the ions can be used to remove re-deposited metal separated from the wafer W on which ion beam etching has been performed. For example, the second plasma PL2 can be used to perform a reactive ion etching process. The second gas g_210 can be separated into ions and electrons EL by a voltage of a capacitor, which is supplied to the wafer stage WS. The voltage can be applied to the wafer stage WS by the stage voltage application unit 400. When the second gas g_210 is supplied to the second chamber 200, the first chamber shutter 120 and the second chamber shutter 220 can slide to a closed position corresponding to a closed state. The second gas injection unit 210 can supply the second gas g_210 to the second chamber 200 only when the second chamber shutter 220 is in the closed state. Furthermore, the second gas injection unit 210 can supply the second gas g_210 to the second chamber 200 only when the second chamber shutter 220 and the first chamber shutter 120 are simultaneously in the closed state. Accordingly, the operation of the second chamber 200 using the second gas g_210 does not affect the first chamber 100. The first chamber 100 and the second chamber 200 can independently generate plasma to perform plasma processing. When the second gas injection unit 210 supplies the second gas g_210 to the second chamber 200, the first gas injection unit 110 can not supply the first gas g_110 to the first chamber 100.

[0040] Referring to Figure 1 When the first gas g_110 is supplied from the first gas injection unit 110 to the first chamber 100, the first chamber shutter 120 and the second chamber shutter 220 can be in an open state. When the first gas g_110 is supplied to the first chamber 100, the second gas injection unit 210 can not supply the second gas g_210 to the second chamber 200. Accordingly, when the first chamber 100 operates to generate the first plasma PL1, the second chamber 200 can not affect the operation of the first chamber 100. Accordingly, the first chamber 100 and the second chamber 200 can independently generate plasma to perform plasma processing, as described above.

[0041] Referring to Figure 2When the second gas g_210 is supplied from the second gas injection unit 210 to the second chamber 200, the first chamber baffle 120 and the second chamber baffle 220 can be in a closed state. When the second gas g_210 is supplied to the second chamber 200, the first gas injection unit 110 may not supply the first gas g_110 to the first chamber 100. Therefore, when the second chamber 200 is operating, the first chamber 100 may not affect the operation of the second chamber 200. Furthermore, when the second chamber 200 is operating, the operation of the second chamber 200 may not affect the first chamber 100.

[0042] The plasma processing apparatus 10 may include a vacuum unit 300 that provides a vacuum to the second chamber 200. The vacuum unit 300 may include a vacuum pump 310 that generates vacuum pressure, a suction port 330 that draws gas by applying vacuum pressure to the second chamber 200, and a vacuum valve 320 disposed between the vacuum pump 310 and the suction port 330 to regulate or control the vacuum pressure. The suction port may be an opening in the second chamber 200 fluidly connected to the vacuum pump 310. The vacuum valve 320 may alter the fluid connection between the vacuum pump 310 and the suction port 330 by partially or completely blocking the fluid connection. Byproducts of etching reactions generated by ion beam etching and reactive ion beam etching may be discharged to the outside of the second chamber 200 through the vacuum unit 300.

[0043] Figure 3 According to the embodiments Figure 2 An enlarged cross-sectional view of region A. Figure 4 According to another embodiment Figure 2 An enlarged cross-sectional view of region A. Figure 5 According to another embodiment Figure 2 An enlarged cross-sectional view of region A.

[0044] Reference Figure 1 and Figure 2 describe Figures 3 to 5 . refer to Figures 3 to 5 The details of the second chamber baffle described can be applied to the first chamber baffle in a similar manner. Since the detailed description of the first chamber baffle is redundant with that of the second chamber baffle, they may be omitted below.

[0045] The second chamber baffle 220 may have a shape in its portion facing the second chamber 200 such that its side surface facing the second chamber 200 has a constant horizontal level, such as... Figure 1 and Figure 2 As shown (e.g., the surface may be planar). In some embodiments, the second chamber baffle 221 may have side surfaces with a series of arcuate semicircular shapes in its portion facing the second chamber 200, such as... Figure 3The arc-shaped semi-circular shape can also be semi-spherical. The arc-shaped semi-circular shape increases the surface area of the second chamber baffle 221 facing the second chamber 200, and thus can extend the lifetime of the second chamber baffle 221 in processing re-deposited materials. The curvature and number of the arc-shaped semi-circular shape are not limited to those shown in the figure. In some embodiments, the second chamber baffle 222 can have a side surface with a series of triangular shapes with a series of peak points formed therein, as shown in FIG. 6B. Figure 4 The triangular shape can be a pyramid shape. As in the case of the arc-shaped semi-circular shape, the triangular shape with the peak points formed therein increases the surface area of the second chamber baffle 222 facing the second chamber 200, and thus can extend the lifetime of the second chamber baffle 222 in processing re-deposited materials. The slope and number of the triangular shape are not limited to those shown in the figure. In some embodiments, the second chamber baffle 223 can have a side surface with an uneven shape in a portion thereof facing the second chamber 200, as shown in FIG. 6C. Figure 5 The uneven shape increases the surface area of the second chamber baffle 223 facing the second chamber 200, and thus can extend the lifetime of the second chamber baffle 223 in processing re-deposited materials. The depth and number of the uneven shape are not limited to those shown in the figure.

[0046] Figure 6 is a conceptual view of a removal of re-deposited materials in a region B of Figure 2 is a close-up view of the removal of re-deposited materials in the region B of

[0047] Referring to Figure 6 , after performing ion beam etching on the wafer W (for example, after performing ion beam etching using the first plasma PL1), re-deposited metal can be formed on the upper surface of the wafer W. Ions separated from the second gas are combined with the re-deposited metal. In embodiments, the ions can be halogen ions, such as chloride ions (Cl-) or fluoride ions (F-), but are not limited thereto, and can correspond to methanol molecules. The ions combined with the re-deposited metal can then be separated from the wafer W, thereby removing the re-deposited metal combined with the ions. For example, reactive ion etching using the second plasma PL2 can remove the re-deposited metal combined with the ions. Ion molecules combined with the re-deposited metal that has been separated from the wafer W can be absorbed and removed by the vacuum unit described above. Through the above-described process, the re-deposited metal present on the upper surface of the wafer W can be removed, and short-circuiting of the MTJ can be prevented.

[0048] Figure 7 is a flowchart of a method of manufacturing a semiconductor device according to an embodiment, the method including a plasma process.

[0049] Referring to Figure 7In operation S10, a wafer W can be prepared in the second chamber 200. For example, the wafer W can be arranged (e.g., placed) on a wafer stage WS of the second chamber 200. For example, the wafer stage WS can be an ESC and can apply a voltage to the wafer W. The voltage applied to the wafer W can be controlled by the stage voltage application unit 400.

[0050] In operation S20, a plasma process simulation can be performed on the wafer W. For example, the plasma process can include any plasma process, such as a plasma etching process, a plasma annealing process, and / or a plasma cleaning process, and the plasma process simulation can simulate the plasma process.

[0051] The plasma process simulation of operation S20 can include defining a plasma reaction, calculating a reaction parameter, generating a plasma process simulation curve, and generating a final simulation curve.

[0052] After the wafer W is prepared in the second chamber 200, in operation S30, a plasma treatment can be performed on the wafer W. In some embodiments, the plasma treatment can be based on the plasma process simulation, for example, in operation S20. Operation S30 (i.e., the plasma treatment) can include a plasma treatment, such as an etching treatment, a deposition treatment, a cleaning treatment, etc., performed on the wafer W using plasma.

[0053] After the plasma treatment is performed on the wafer W, in operation S40, a subsequent semiconductor process can be performed on the wafer W. The subsequent semiconductor process performed on the wafer W can include various processes. For example, the subsequent semiconductor process can include a deposition process, an etching process, an ion process, a cleaning process, etc. Plasma can or can not be used in the subsequent semiconductor process. Further, the subsequent semiconductor process can include a singulation process to separate the wafer W into individual semiconductor chips, a testing process to test the semiconductor chips, and a packaging process to package the semiconductor chips. Through the subsequent semiconductor process performed on the wafer W, a semiconductor device can be completed.

[0054] Figure 8 is Figure 7 a flowchart of detailed operations included in operation S30.

[0055] Referring to Figure 8 and Figure 1 and Figure 2 , operation S30 (the plasma treatment operation) can include operation S31 of opening the chamber baffle such that the chamber baffle is in an open state. The chamber baffle can include the first chamber baffle 120 and the second chamber baffle 220. The chamber baffle being in the open state means that the chamber baffle is in a position such that both sides of the grid 140 are open (e.g., the first side can be open to the first chamber 100, and the second side can be open to the second chamber), as illustrated in FIG. 2B.Figure 1 The chamber shutter can be slid or moved to enter the open state. After performing operation S31, operation S30 can include operation S32 of operating the first chamber 100. Operating the first chamber 100 can include supplying the first gas g_110 to the first chamber 100 through the first gas injection unit 110, and generating the first plasma PL1 from the first gas g_110 as previously described. The first plasma PL1 can be an ICP. The first plasma PL1 thus generated can be used to perform ion beam etching on the wafer W. After performing operation S32, operation S33 of closing the chamber shutter can be performed. The chamber shutter can include the first chamber shutter 120 as well as the second chamber shutter 220. However, in some embodiments, only the second chamber shutter 220 is closed in operation S33. The chamber shutter being in the closed state means that the chamber shutter is in a position such that both sides of the grid 140 are blocked, as Figure 2 The chamber shutter can be moved or slid to enter the closed state. After performing operation S33, operation S30 can include operation S34 of operating the second chamber 200. Operating the second chamber 200 includes supplying the second gas g_210 to the second chamber 200 through the second gas injection unit 210, and generating the second plasma PL2 including ions and electrons EL from the second gas g_210 as previously described. The second plasma PL2 can be a CCP. The second plasma PL2 thus generated can be used to perform reactive ion etching on the wafer W on which ion beam etching has been performed. Furthermore, since the chamber shutter is closed when reactive ion etching is performed, damage to the grid 140 can be reduced, and the service life of the grid 140 can be extended.

[0056] Figure 9 is a configuration diagram illustrating each memory cell included in a memory cell array produced by the plasma processing apparatus according to the embodiment.

[0057] Figure 9 illustrates a normal memory cell 30 among the memory cells included in a memory cell array produced by the plasma processing apparatus 10 (see Figure 1 ) according to the embodiment.

[0058] The normal memory cell 30 can include a select transistor 31 and an MTJ structure 32. A gate of the select transistor 31 can be connected to a word line WL, and one electrode (e.g., a drain electrode) of the select transistor 31 can be connected to a bit line BL through the MTJ structure 32. Furthermore, the other electrode (e.g., a source electrode) of the select transistor 31 can be connected to a source line SL.

[0059] The MTJ structure 32 can include a fixed layer 33, a free layer 35, and a tunnel barrier layer 34 therebetween. The magnetization direction of the fixed layer 33 can be fixed, and the magnetization direction of the free layer 35 can be parallel (P) or anti-parallel (AP) to the magnetization direction of the fixed layer 33 according to data stored by a write operation. To fix the magnetization direction of the fixed layer 33, an anti-ferromagnetic layer can also be provided.

[0060] The fixed layer 33 can include a ferromagnetic material. For example, the fixed layer 33 can include at least one of CoFeB, Fe, Co, Ni, Gd, Dy, CoFe, NiFe, MnAs, MnBi, MnSb, CrO, MnOFeO, FeOFeO, NiOFeO, CuOFeO, MgOFeO, EuO, or YFeO.

[0061] The tunnel barrier layer 34 can include a non-magnetic material. For example, the tunnel barrier layer 34 can include at least one of magnesium (Mg), titanium (Ti), aluminum (Al), magnesium zinc oxide (MgZnO), titanium nitride (TiN), or vanadium nitride (VN).

[0062] The free layer 35 can include a ferromagnetic material including cobalt (Co), iron (Fe), or nickel (Ni). For example, the free layer 35 can include at least one of FeB, Fe, Co, Ni, Gd, Dy, CoFe, NiFe, MnAs, MnBi, MnSb, CrO, MnOFeO, FeOFeO, NiOFeO, CuOFeO, MgOFeO, EuO, or YFeO.

[0063] In some embodiments, the normal storage cell 30 is defined to be in a data zero (0) logic state when the free layer 35 and the fixed layer 33 of the MTJ structure 32 are in a parallel (P) state, i.e., when the MTJ structure 32 exhibits a low resistance. Conversely, the normal storage cell 30 is defined to be in a data one (1) logic state when the free layer 35 and the fixed layer 33 of the MTJ structure 32 are in an anti-parallel (AP) state, i.e., when the MTJ structure 32 exhibits a high resistance. In other embodiments, the normal storage cell 30 can be defined to be in a data 0 logic state when the MTJ structure 32 is in an AP state, and the normal storage cell 30 can be defined to be in a data 1 logic state when the MTJ structure 32 is in a P state.

[0064] Figure 10 and Figure 11 is a conceptual diagram illustrating data stored according to a magnetization direction in an MTJ structure of a storage cell produced by a plasma processing apparatus according to an embodiment.

[0065] Referring to Figure 10 and Figure 11The resistance value of the MTJ structure 32 can vary depending on the magnetization direction of the free layer 35.

[0066] When the read current IR flows in the MTJ structure 32, a data voltage according to the resistance value of the MTJ structure 32 can be output. Since the intensity of the read current IR is much smaller than that of the write current, the magnetization direction of the free layer 35 does not change due to the read current IR.

[0067] As shown in FIG. 2A, in the MTJ structure 32, the magnetization direction of the free layer 35 and the magnetization direction of the fixed layer 33 can be parallel to each other. The MTJ structure 32 in this state can have a low resistance value, and data 0 can be output through a read operation. Figure 10 As shown in FIG. 2B, in the MTJ structure 32, the magnetization direction of the free layer 35 and the magnetization direction of the fixed layer 33 can be anti-parallel to each other. The MTJ structure 32 in this state can have a high resistance value, and data 1 can be output through a read operation.

[0068] Figure 11

[0069] Figure 12 is a conceptual diagram illustrating a magnetization direction according to a write operation in an MTJ structure of a memory cell produced by a plasma processing apparatus according to an embodiment.

[0070] Referring to Figure 12 , depending on the direction of the write current (e.g., the first write current IW1 and the second write current IW2) flowing in the MTJ structure 32, the magnetization direction of the free layer 35 can be determined.

[0071] When the first write current IW1 is applied from the free layer 35 to the fixed layer 33 (as shown in (a)), free electrons having the same spin direction as the fixed layer 33 apply a torque to the free layer 35. As a result, the free layer 35 can be magnetized in parallel to the fixed layer 33. Thus, data 0 having a low resistance value can be stored in the MTJ structure 32, as shown in (b).

[0072] In the MTJ structure 32 in the data 0 logic state, when the second write current IW2 is applied from the fixed layer 33 to the free layer 35 (as shown in (c)), free electrons having an opposite spin direction to the fixed layer 33 return to the free layer 35 to apply a torque to the free layer 35. Thus, the free layer 35 can be magnetized anti-parallel to the fixed layer 33. Thus, data 1 having a high resistance value can be stored in the MTJ structure 32, as shown in (d).

[0073] That is, in the MTJ structure 32, due to spin transfer torque (STT), the magnetization direction of the free layer 35 can change to be parallel or anti-parallel to the fixed layer 33, so that data 0 or 1 can be stored.​​

[0074] While the present concepts have been particularly shown and described with reference to embodiments thereof, it will be understood that various changes in form and details can be made therein without departing from the spirit and scope of the appended claims.

Claims

1. A plasma processing apparatus, comprising: a dual chamber system comprising a first chamber and a second chamber, the second chamber being fluidically connected to the first chamber through an opening between the first chamber and the second chamber; a first gas injector configured to supply a first gas to the first chamber; a grid located at the opening between the first chamber and the second chamber, the grid extending along the opening and having a first side facing the first chamber and a second side facing the second chamber; a second chamber shutter located at the second side of the grid; a second gas injector configured to inject a second gas into the second chamber; and a wafer table located within the second chamber and having a wafer support surface, wherein the second chamber shutter is configured to transition between an open state in which the grid is fluidically connected to the second chamber and a closed state in which the grid is not fluidically connected to the second chamber.

2. The plasma processing apparatus of claim 1, further comprising a first chamber shutter located at the first side of the grid, the first chamber shutter being configured to transition between an open state in which the grid is fluidically connected to the first chamber and a closed state in which the grid is not fluidically connected to the first chamber. wherein, 3. The plasma processing apparatus of claim 1, further comprising a table voltage source, the table voltage source being configured to apply a voltage to the wafer table when the second gas is injected into the second chamber. wherein the first gas injector is further configured to supply the first gas when the first chamber shutter and the second chamber shutter are in the open state and not to supply the first gas when the first chamber shutter and the second chamber shutter are not in the open state.

4. The plasma processing apparatus of claim 2, wherein, the second gas injector is further configured to supply the second gas when the second chamber shutter is in the closed state and not to supply the second gas when the second chamber shutter is not in the closed state.

5. The plasma processing apparatus of claim 1, wherein, 6. The plasma processing apparatus of claim 1, further comprising a plurality of radio frequency (RF) coils located at an outer wall of the first chamber, the plurality of RF coils being configured to apply RF power to the first chamber to generate a first plasma from the first gas. wherein the first plasma being configured to perform an ion beam etch on a wafer, 7. The plasma processing apparatus of claim 6, wherein, the second chamber being configured to separate the second gas into ions and electrons, and the ions being configured to remove re-deposited metal separated from the wafer on which the ion beam etch has been performed. the second gas comprises one of chlorine gas (Cl2), carbon fluoride (CF), hydrogen bromide (HBr), methanol, or a combination thereof.

8. The plasma processing apparatus of claim 1, wherein, a side surface of the second chamber shutter facing away from the grid has one of a constant level or a series of arc-shaped semicircular shapes.

9. The plasma processing apparatus of claim 1, wherein, a side surface of the second chamber shutter facing the second chamber has one of a series of triangular shapes or an uneven shape, wherein a series of peak points are formed in the series of triangular shapes.

10. The plasma processing apparatus of claim 1, wherein, 11. A plasma processing apparatus, comprising: ​ a first chamber configured to form a plasma; a second chamber located above the first chamber and fluidly connected with the first chamber through an opening between the first chamber and the second chamber; a grid located at the opening between the first chamber and the second chamber, the grid extending along the opening and having a first side facing the first chamber and a second side facing the second chamber; a first gas injector configured to supply a first gas to the first chamber; a second gas injector configured to supply a second gas to the second chamber; a wafer stage located within the second chamber and having a wafer support surface; a stage voltage source; a first chamber shutter located at the first side of the grid; and a second chamber shutter located at the second side of the grid, wherein the stage voltage source is configured to apply a voltage to the wafer stage when the second gas is injected into the second chamber, and the first chamber shutter and the second chamber shutter are each configured to move between an open state in which the grid is fluidly connected with the first chamber and the second chamber and a closed state in which the grid is not fluidly connected with the first chamber and the second chamber, in a direction parallel to a direction in which the grid extends.

12. The plasma processing apparatus of claim 11, further comprising: a plurality of radio frequency (RF) coils located at an outer wall of the first chamber; and an RF power source configured to supply power to the plurality of RF coils, wherein the plurality of RF coils are configured to apply RF power to the first chamber to generate a first plasma from the first gas, and the first plasma passes through the grid to perform ion beam etching on a wafer. the second chamber is configured to separate the second gas into ions and electrons, and the ions are configured to remove re-deposited metal separated from the wafer on which the ion beam etching has been performed.

13. The plasma processing apparatus of claim 12, wherein, the second chamber shutter includes: a first surface facing the second chamber and including an oxide film; and 14. The plasma processing apparatus of claim 11, wherein, a second surface opposite the first surface and including a metal film. the first gas injector is further configured to supply the first gas only when the first chamber shutter and the second chamber shutter are in the open state, and the second gas injector is further configured to supply the second gas only when the first chamber shutter and the second chamber shutter are in the closed state.

15. The plasma processing apparatus of claim 11, wherein, the second gas includes one of chlorine gas (Cl2), carbon fluoride (CF), hydrogen bromide (HBr), methanol, or a combination thereof. a side surface of the second chamber shutter distal from the grid has a constant level, a series of arc-shaped semicircular shapes, a series of triangular shapes having a series of peak points formed therein, or an uneven shape.

16. The plasma processing apparatus of claim 11, wherein, 18. The plasma processing apparatus of claim 11, further comprising a vacuum source configured to provide a vacuum to the second chamber, 17. The plasma processing apparatus of claim 11, wherein, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; wherein, a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with the second chamber to draw a gas into a vacuum by applying the vacuum pressure; and a vacuum source configured to provide a vacuum to the second chamber, the vacuum source includes: a vacuum pump configured to generate a vacuum pressure; a suction port fluidly connected with a vacuum valve fluidly connected to and between the vacuum pump and the suction port, the vacuum valve configured to regulate the vacuum pressure.

19. A plasma processing apparatus comprising: a dual chamber system including a first chamber configured to form a plasma and a second chamber located on a side of the first chamber, the second chamber fluidly connected to the first chamber through an opening between the first chamber and the second chamber and configured to perform a reactive ion etch; a grid located at the opening between the first chamber and the second chamber, the grid extending along the opening; a first gas injector configured to supply a first gas to the first chamber; a second gas injector configured to supply a second gas to the second chamber; a wafer stage located within the second chamber and having a wafer support surface; a first chamber shutter located between the grid and the first chamber; a second chamber shutter located between the grid and the second chamber; a stage voltage source; a plurality of radio frequency (RF) coils located on an outer wall of the first chamber; and an RF power source configured to supply power to the plurality of RF coils, wherein the stage voltage source is configured to apply a voltage to the wafer stage when the second gas is injected into the second chamber, the first chamber shutter and the second chamber shutter are each configured to slide in a direction parallel to a direction in which the grid extends between an open state in which the grid is fluidly connected to the first chamber and the second chamber and a closed state in which the grid is not fluidly connected to the first chamber and the second chamber, the second chamber shutter includes: a first surface facing the second chamber and including an oxide film; and a second surface opposite the first surface and including a metal film, the first gas injector is further configured to supply the first gas only when the first chamber shutter and the second chamber shutter are in the open state, and the second gas injector is further configured to supply the second gas only when the first chamber shutter and the second chamber shutter are in the closed state. the plurality of RF coils are configured to apply RF power to the first chamber to generate a first plasma from the first gas, 20. The plasma processing apparatus of claim 19, wherein, the first plasma is configured to pass through the grid to perform ion beam etching on a wafer, the second chamber is configured to separate the second gas into ions and electrons in the second chamber, and the ions are configured to remove re-deposited metal separated from the wafer on which the ion beam etching has been performed. ​

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