Anti-noise low-frequency resonator based on Floquet topology circuit
By designing a multilayer one-dimensional SSH-type circuit with Floquet topology, the problems of complex structure and high integration difficulty of topological insulator electronic devices are solved. The noise immunity and easy integration of low-frequency resonators are achieved, making them suitable for electronic devices in harsh environments.
Patent Information
- Application Number
- CN202510979563.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-16
- Publication Date
- 2025-11-18
AI Technical Summary
Existing electronic devices based on topological insulators have complex structures and are difficult to integrate, making them unable to meet the needs of use in harsh environments, especially lacking low-frequency resonators with good noise immunity.
A multi-layer one-dimensional SSH type circuit based on Floquet topology is adopted. Noise immunity is achieved by using cross-coupling connections through alternating capacitors and grounded LC resonant circuits. Only inductors and capacitors are used in the circuit, making the structure simple and easy to integrate.
It achieves the noise immunity characteristics of low-frequency resonators, has a high degree of design flexibility, is easy to manufacture and integrate, and is suitable for electronic devices in harsh environments.
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Figure CN120979347A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to a noise-resistant low-frequency resonator based on Floquet topology circuits, belonging to the field of topology circuits. Background Technology
[0002] Topological insulators are materials that are insulated overall but conductive on the surface. The topologically protected edge states can be potentially used for unidirectional light transmission in photonics. The conductive edge states of topological insulators are unidirectional and are not affected by surface defects or local disordered reflections. Their excellent conductivity, strong noise immunity, and low dissipation are of great value for building high-speed, high-capacity multimedia information transmission networks.
[0003] As the working environment of aerospace instruments becomes increasingly harsh, electronic devices need to maintain good performance even in extremely harsh conditions. Currently, some electronic devices based on topological insulators exist on the market, but due to their complex structure and high integration difficulty, they cannot meet the usage requirements or application environments. In particular, there is an urgent need for a low-frequency resonator with good noise immunity. Summary of the Invention
[0004] This invention addresses the problem that existing electronic devices based on topological insulators are complex in structure and difficult to integrate, thus failing to meet usage requirements or application environment issues. Therefore, it proposes a noise-resistant low-frequency resonator based on Floquet topology circuitry.
[0005] The technical solution adopted by the present invention to solve the above problems is as follows: The present invention includes a noise-resistant low-frequency resonator based on Floquet topology circuit, wherein the low-frequency resonator includes: A multilayer one-dimensional SSH type circuit, the one-dimensional SSH type circuit comprising: alternating arrangement of first capacitors C a Second capacitor C b A grounded LC resonant circuit is connected between every two capacitors; the capacitor at the beginning of the one-dimensional SSH type circuit is grounded, and the capacitor at the end is grounded. In the aforementioned multilayer one-dimensional SSH type circuit, adjacent two layers of one-dimensional SSH type circuits are connected by multiple third capacitors C. v Cross-coupled connection.
[0006] In some embodiments, the two adjacent one-dimensional SSH type circuits are connected by multiple third capacitors C v Cross-coupled connections, including: The first grounded LC resonant circuit of the previous one-dimensional SSH type circuit and the second grounded LC resonant circuit of the next one-dimensional SSH type circuit are connected through the first third capacitor C. vConnect, the 2nd ground LC resonance loop of the former one-dimensional SSH type circuit and the 1st ground LC resonance loop of the latter one-dimensional SSH type circuit are connected through the 2nd third capacitor C v Connect, the 2nd ground LC resonance loop of the former one-dimensional SSH type circuit and the 1st ground LC resonance loop of the latter one-dimensional SSH type circuit are connected through the 2nd third capacitor C Connect, the 2nd ground LC resonance loop of the former one-dimensional SSH type circuit and the 1st ground LC resonance loop of the latter one-dimensional SSH type circuit are connected through the 2nd third capacitor C v Connect, the 2nd ground LC resonance loop of the former one-dimensional SSH type circuit and the 1st ground LC resonance loop of the latter one-dimensional SSH type circuit are connected through the 2nd third capacitor C v Connect, the 2nd ground LC resonance loop of the former one-dimensional SSH type circuit and the 1st ground LC resonance loop of the latter one-dimensional SSH type circuit are connected through the 2nd third capacitor C Connect, the 2nd ground LC resonance loop of the former one-dimensional SSH type circuit and the 1st ground LC resonance loop of the latter one-dimensional SSH type circuit are connected through the 2nd third capacitor C
[0007] In some embodiments, the ground LC resonance loop comprises: An inductance L and a capacitance C0 connected in parallel and grounded.
[0008] In some embodiments, the inductance L adopts an inductance of 100nf, and the capacitance C0 adopts a capacitance of 1uf.
[0009] In some embodiments, the first capacitor C a Adopts an inductance of 50pF.
[0010] In some embodiments, the second capacitor C b Adopts an inductance of 150pF.
[0011] In some embodiments, the third capacitor C v Adopts an inductance of 60pF.
[0012] The beneficial effects of the present application are: 1. The present application has good noise resistance by using the robustness of the topological insulator circuit, and has better applicability and selection range for the selection of elements.
[0013] 2. The low-frequency resonator provided by the present application has simple overall structure, only uses inductance and capacitance, and the topological circuit composed of inductance and capacitance has the unique advantages of high design freedom, high cost performance, easy processing and production, and easy integration in other electronic devices. BRIEF DESCRIPTION OF DRAWINGS
[0014] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the accompanying drawings needed to be used in the embodiments or prior art description will be briefly introduced as follows. Obviously, the accompanying drawings in the following description only are the embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative effort based on the provided drawings.
[0015] Figure 1 A structure schematic diagram of an anti-noise low-frequency resonator based on a Floquet topological circuit is provided for the present application. Figure 2 A structure schematic diagram of another anti-noise low-frequency resonator based on a Floquet topological circuit is provided for the present application. Figure 3 A circuit structure diagram of a grounded LC resonant loop is provided for the present application. Figure 4 A first schematic diagram of a topological circuit surface normalized voltage distribution under a specific frequency is provided for the present application. Figure 5 A second schematic diagram of a topological circuit surface normalized voltage distribution under a specific frequency is provided for the present application. Figure 6 A first schematic diagram of a topological surface normalized voltage distribution under a corresponding frequency between different layers when a grounded reference capacitance step change value is changed is provided for the present application. Figure 7 A second schematic diagram of a topological surface normalized voltage distribution under a corresponding frequency between different layers when a grounded reference capacitance step change value is changed is provided for the present application. Figure 8 A signal change schematic diagram of a circuit edge node 1 is provided for the present application. Figure 9 A signal change schematic diagram of a circuit non-edge node 2 is provided for the present application. DETAILED DESCRIPTION DETAILED DESCRIPTION In combination Figure 1 In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the accompanying drawings needed to be used in the embodiments or prior art description will be briefly introduced as follows. Obviously, the accompanying drawings in the following description only are the embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative effort based on the provided drawings. The multi-layer one-dimensional SSH type circuit comprises: first capacitors C a and second capacitors C b connected with a grounded LC resonant loop between every two capacitors; the capacitors in the starting position are grounded in the one-dimensional SSH type circuit, and the capacitors in the end position are grounded. In the multi-layer one-dimensional SSH type circuit, the two adjacent one-dimensional SSH type circuits are connected through a plurality of third capacitors C vCross-coupled connection.
[0017] It should be noted that the Su-Schrieffer-Heeger (SSH) circuit is the simplest one-dimensional topological insulator corresponding circuit model, which is composed of resonant units and coupling capacitors therebetween, and the one-dimensional SSH circuit adopted in the present application is based on this, each resonant unit (i.e. a grounded LC resonant loop) is connected through two kinds of capacitors (i.e. a first capacitor C a and a second capacitor C b ) arranged alternately, the frequency selection can be performed by adjusting the element values of the grounded LC resonant loop, and finally the capacitive and inductive elements arranged periodically realize the topological insulator characteristics, so that the signal channel has the noise immunity characteristic. Preferably, in the actual circuit, a five-layer one-dimensional SSH circuit structure is selected, and the capacitors are cross-coupled to connect different layers of the one-dimensional SSH circuit.
[0018] It should be further noted that the step amplitude of the ground reference capacitor is 2 times the sum of the interlayer coupling capacitors, that is, 2 times the first capacitor C plus the second capacitor C , which can excite the boundary response, so that the circuit boundary has the noise immunity robustness; at the same time, the change of the alternating capacitors C and C in the layer will also cause the circuit boundary to have the noise immunity robustness. When the step values of the alternating capacitors C and C in the layer and the reference capacitor satisfy the above two states, the signal channel with the noise immunity characteristic will also be generated at the system boundary, accompanied by low-frequency resonance effect, thereby realizing the effect of the low-frequency resonator of the present application.
[0019] In some embodiments, the adjacent two layers of one-dimensional SSH type circuits are cross-coupled by a plurality of third capacitors C v , including: the first ground LC resonant loop of the previous layer of one-dimensional SSH type circuit is connected to the second ground LC resonant loop of the next layer of one-dimensional SSH type circuit through a first third capacitor C v , the second ground LC resonant loop of the previous layer of one-dimensional SSH type circuit is connected to the first ground LC resonant loop of the next layer of one-dimensional SSH type circuit through a second third capacitor C v , forming a cross-coupled connection; the second ground LC resonant loop of the previous layer of one-dimensional SSH type circuit is connected to the third ground LC resonant loop of the next layer of one-dimensional SSH type circuit through a third third capacitor C v , and the third ground LC resonant loop of the previous layer of one-dimensional SSH type circuit is connected to the second ground LC resonant loop of the next layer of one-dimensional SSH type circuit through a fourth third capacitor C v , forming a cross-coupled connection; The above connection mode is repeated to complete the cross-coupling connection of two adjacent one-dimensional SSH circuits.
[0020] It should be noted that, according to the above, the low-frequency resonator of the present application is coupled and connected in the layer and between the layers by the capacitor, so that the overall size of the circuit is small, which is convenient for integration into other electronic devices and some space-limited environments, and in addition, only inductors and capacitors are used, the overall structure is simple, the use of components is also simple, and the manufacturing difficulty of the low-frequency resonator of the present application is further reduced.
[0021] In some embodiments, the ground LC resonance loop comprises: The inductor L and the capacitor C0 are connected in parallel and grounded.
[0022] In some embodiments, the inductor L adopts an inductance of 100nf, and the capacitor C0 adopts a capacitance of 1uf.
[0023] In some embodiments, the first capacitor C a The inductor is 50pF.
[0024] In some embodiments, the second capacitor C b The inductor is 150pF.
[0025] In some embodiments, the third capacitor C v The inductor is 60pF Specific implementation method two: In order to facilitate the understanding of the technical solutions of the first embodiment, the present application is illustrated by specific examples.
[0026] As Figure 2 shown, it is a structure schematic diagram of a noise-resistant low-frequency resonator based on a Floquet topological circuit provided by the second embodiment of the present application.
[0027] The low-frequency resonator in the present embodiment adopts a five-layer one-dimensional SSH circuit structure, and the ground LC resonance loops are connected in an interlaced manner by different first capacitors and second capacitors The ground LC resonance loops of different layers of one-dimensional SSH circuits are cross-coupled by third capacitors C v The specific electronic components of the ground LC resonance loop are shown in Figure 3 , which is a circuit structure diagram of the ground LC resonance loop. Each resonant unit of the circuit is a capacitor L And capacitance C0 connected in parallel and grounded.
[0028] The low-frequency resonator circuit of the present embodiment is tested, as shown in Figure 3 , the basic parameters of the circuit are set to , and .
[0029] When the alternating capacitance in the layer is made greater than , the corresponding impedance matrix of the circuit can be obtained, and the corresponding frequency point of the circuit is between 502.9 KHz and 503.4 KHz. If the step change value of the grounding reference capacitance is greater than 2 times the sum of and , that is, W , , the circuit takes 90 resonance units (i.e. grounding LC resonance loop), and no abnormal phenomenon is found.
[0030] When is reduced to be equivalent to , the circuit also has no obvious change.
[0031] When , and the remaining parameters remain unchanged, a boundary voltage protected by topology appears at the boundary of the circuit.
[0032] When the alternating capacitance in the layer is made less than , and the step change value of the grounding reference capacitance is greater than , the boundary voltage protected by topology still exists in the circuit. When is reduced to be equivalent to the static bandwidth of the system, the circuit has no obvious change. Continue to reduce the step change value of the reference capacitance, so that is less than , and the boundary voltage protected by topology still exists in the circuit.
[0033] The surface normalized voltage distribution of the topology circuit at a specific frequency is shown in Figure 4 and Figure 5 . The topology boundary voltage excited by the corresponding frequency in each layer changes the interlayer coupling capacitance ratio, and only appears at the boundary of the layer. As shown in Figure 6 and Figure 7 , it is a schematic diagram of the topology surface normalized voltage distribution at a specific frequency corresponding to different layers with the step change value of the grounding reference capacitance. It can be seen that the corresponding voltage ratio Figure 4 and Figure 5 is stronger at a specific frequency, and the distribution range is also larger.
[0034] Through testing, the final circuit parameter selection , and , , and In the circuit of 90 resonant units, the frequency range corresponding to the circuit is between 503 KHz and 503.2 KHz.
[0035] Further, in the case of the final circuit parameter selection described above, the leftmost edge node of the first layer one-dimensional SSH circuit is named node 1, and the right side of node 1 is represented as node 2, node 1 is excited by a constant current source with an equal amplitude signal of 1, and node 2 is excited by a constant current source with an equal amplitude signal of -1. Less than And Less than When the conditions are met at the same time, the response signal of node 1 is calculated and plotted as a solid line, and the driving signal is represented as a dashed line, as shown in Figure 8 The signal change diagram of the edge node 1 of the circuit is shown. As shown in Figure 9 The signal change diagram of the non-edge node 2 of the circuit is shown, and the response signal at node 2 is represented as a solid line and the driving signal is represented as a dashed line. As can be seen from Figure 8 And Figure 9 Compared with the driving signal, the response at node 1 appears low-frequency resonance, and the response signal of node 2 decays over time. By calculation, the driving signal frequency and period is 65.43 Hz and 15.29 ms, and the period and frequency of the low-frequency resonance of the output signal of node 1 are 32.87 ms and 32.1 Hz, respectively, which is about double the driving period of the driving signal frequency.
[0036] In practical applications, the low-frequency resonator of the present application can detect the micro-vibration of buildings, bridges and other infrastructure, such as earthquake precursors or structural damage signals, by using the 32.1 Hz low-frequency resonance point, and can improve the signal-to-noise ratio by energy localization; in underwater communication modulation, a water acoustic signal modulation module with strong penetration and low loss can be designed by using the low-frequency resonance characteristics, which provides a reliable solution for environmental monitoring, communication and signal processing, and meets the working requirements in harsh environments.
[0037] The above is only a preferred embodiment of the present application, and is not intended to limit the present application in any form. Although the present application has been disclosed as above with a preferred embodiment, it is not intended to limit the present application. Any skilled person in the art can make some changes or modifications to the above disclosed technical content without departing from the scope of the technical solution of the present application, and equivalent embodiments with equivalent changes can be made within the scope of the technical solution of the present application. Any simple modification, equivalent replacement and improvement of the above embodiments within the scope of the technical solution of the present application, according to the technical essence of the present application, within the spirit and principles of the present application, are still within the protection scope of the present application.
Claims
1. A Floquet topological circuit based noise immune low frequency resonator characterized in that, The low-frequency resonator comprises: Multi-layer one-dimensional SSH type circuit, the one-dimensional SSH type circuit comprising: first capacitors C a and second capacitors C b alternately arranged, a ground LC resonant circuit is connected between every two capacitors; the capacitors in the starting position of the one-dimensional SSH type circuit are grounded, and the capacitors in the end position are grounded; In the multi-layer one-dimensional SSH type circuit, two adjacent one-dimensional SSH type circuits are connected through a plurality of third capacitors C v Cross-coupled connection.
2. The Floquet topological circuit based anti-noise low frequency resonator of claim 1, wherein, The two adjacent one-dimensional SSH-type circuits are connected in cross-coupled manner through a plurality of third capacitors C v cross-coupled connection, comprising: The first ground LC resonance loop of the previous layer one-dimensional SSH type circuit is connected with the second ground LC resonance loop of the next layer one-dimensional SSH type circuit through a first third capacitor C v The second ground LC resonance loop of the previous layer one-dimensional SSH type circuit is connected with the first ground LC resonance loop of the next layer one-dimensional SSH type circuit through a second third capacitor C v The connection forms a cross-coupling connection; The second ground LC resonance loop of the former one-dimensional SSH type circuit is connected with the third ground LC resonance loop of the latter one-dimensional SSH type circuit through a third capacitor C v The third ground LC resonance loop of the former one-dimensional SSH type circuit is connected with the second ground LC resonance loop of the latter one-dimensional SSH type circuit through a fourth capacitor C v The connection forms a cross-coupling connection; The above connection mode is repeated to complete the cross-coupling connection of the two adjacent one-dimensional SSH type circuits.
3. The Floquet topological circuit based anti-noise low frequency resonator of claim 1, wherein, The ground LC resonant circuit comprises: The inductance L and the capacitance C0 are connected in parallel and grounded.
4. The Floquet topological circuit based anti-noise low frequency resonator of claim 3, wherein, The inductance L adopts an inductance of 100nf, and the capacitance C0 adopts a capacitance of 1uf.
5. The Floquet topological circuit based anti-noise low frequency resonator of claim 1, wherein, The first capacitance C a An inductance of 50 pF is used.
6. The Floquet topological circuit based anti-noise low frequency resonator of claim 1, wherein, The second capacitor C b An inductance of 150 pF is used.
7. The Floquet topological circuit based anti-noise low frequency resonator of claim 1, wherein, The third capacitor C v An inductance of 60 pF is used.