Perovskite battery assembly and preparation method thereof

Abstract

The invention provides a perovskite battery assembly. An area between a P2 slot and a P3 slot in a series structure does not comprise a perovskite active layer and a first carrier transport layer. The invention further provides a preparation method of the perovskite cell module, in the method, the perovskite active layer is etched only once, and the etched trunking wall is protected by the second carrier transport layer, so that the defects of craters generated by conventional P3 scribing, perovskite layer exposure and the like can be avoided, non-radiative recombination caused by scribing is reduced, and the performance of the cell module is improved. And the efficiency and the stability of the perovskite battery assembly are greatly improved.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of solar cells, in particular to a perovskite cell and a preparation method thereof. BACKGROUND

[0002] Solar cells have been widely concerned as green and clean energy, among which perovskite cells have become a strong contender for future mainstream technology due to high ultimate efficiency, low manufacturing cost and excellent weak light power generation capability.

[0003] However, the efficiency and stability of perovskite cells need to be further improved. SUMMARY

[0004] To solve the above problems, the present disclosure provides a perovskite cell assembly, wherein the area between the P2 line groove and the P3 line groove in the series connection structure does not include a perovskite active layer and a first carrier transport layer.

[0005] According to the perovskite cell assembly of the present disclosure, wherein the area between the P2 line groove and the P3 line groove in the series connection structure only includes a back electrode layer and a second carrier transport layer.

[0006] According to the perovskite cell assembly of the present disclosure, wherein the area between the P2 line groove and the P3 line groove in the series connection structure only includes a back electrode layer, an insulating barrier layer and a second carrier transport layer.

[0007] The present disclosure also provides a preparation method of a perovskite cell, which comprises the following steps:

[0008] P1 scribing step: etching after the preparation of the first carrier transport layer to form a P1 line groove;

[0009] P1.5 scribing step: etching after the preparation of the perovskite active layer to form a P1.5 line groove;

[0010] P2 scribing step: etching before the preparation of the back electrode layer to form a P2 line groove; and

[0011] P3 scribing step: etching after the preparation of the back electrode layer to form a P3 line groove.

[0012] In the preparation method of the perovskite cell assembly of the present disclosure, the P2 scribing step is performed after the preparation of the second carrier transport layer and before the preparation of the back electrode layer.

[0013] In the preparation method of the perovskite cell assembly of the present disclosure, the P2 scribing step is performed after the preparation of the insulating barrier layer and before the preparation of the back electrode layer.

[0014] In the preparation method of the perovskite battery assembly according to the present disclosure, the width of the P1 line groove in the P1 scribing step is 10-50 μm.

[0015] In the preparation method of the perovskite battery assembly according to the present disclosure, the width of the P1.5 line groove in the P1.5 scribing step is 100-300 μm, and the P1.5 line groove is parallel to the P1 line groove and keeps a distance of 5-20 μm from the P1 line groove.

[0016] In the preparation method of the perovskite battery assembly according to the present disclosure, the width of the P2 line groove in the P2 scribing step is 35-100 μm, and the P2 line groove is located on the side close to the P1 line groove in the horizontal direction of the P1.5 line groove, is parallel to the P1.5 line groove, and keeps a distance of 5-20 μm from the edge of the P1.5 line groove.

[0017] In the preparation method of the perovskite battery assembly according to the present disclosure, the width of the P3 line groove in the P3 scribing step is 20-80 μm, and the P3 line groove is located on the side away from the P1 line groove in the horizontal direction of the P1.5 line groove, is parallel to the P2 line groove, and keeps a distance of 5-20 μm from the P2 line groove.

[0018] In the preparation method of the perovskite battery assembly according to the present disclosure, the P1 scribing step, the P1.5 scribing step, the P2 scribing step, and the P3 scribing step are implemented by laser etching.

[0019] The preparation method of the perovskite battery assembly according to the present disclosure only etches the perovskite active layer once, and the right sidewall of the P3 line groove after etching is the boundary position between the dead zone and the effective area, and the second carrier transport layer serves as protection, which can avoid the disadvantages such as craters and exposure of the perovskite layer caused by conventional P3 scribing, reduce the non-radiative recombination caused by scribing, and greatly improve the efficiency and stability of the perovskite battery assembly. Moreover, the preparation method has high adaptability to the original process and low cost. BRIEF DESCRIPTION OF DRAWINGS

[0020] Figure 1 is a schematic diagram of a series structure of a perovskite battery assembly according to the prior art.

[0021] Figure 2 is a schematic diagram of a series structure of a perovskite battery assembly according to one embodiment of the present disclosure.

[0022] Figure 3 is a schematic diagram of a series structure of a perovskite battery assembly according to another embodiment of the present disclosure.

[0023] Figure 4 is a flowchart of a preparation method of a perovskite battery assembly according to one embodiment of the present disclosure.

[0024] Figure 5is a structural schematic diagram of a perovskite battery assembly after a P1 scribe step in a method of preparing the perovskite battery assembly according to one embodiment of the present disclosure.

[0025] Figure 6 is a structural schematic diagram of a perovskite battery assembly after a P1.5 scribe step in a method of preparing the perovskite battery assembly according to one embodiment of the present disclosure.

[0026] Figure 7 is a structural schematic diagram of a perovskite battery assembly after a P2 scribe step in a method of preparing the perovskite battery assembly according to one embodiment of the present disclosure.

[0027] Figure 8 is a structural schematic diagram of a perovskite battery assembly after a P3 scribe step in a method of preparing the perovskite battery assembly according to one embodiment of the present disclosure. DETAILED DESCRIPTION

[0028] So that the technical solutions of the present disclosure can be better understood by those skilled in the art, the technical solutions of the present disclosure are described in detail below with reference to the accompanying drawings.

[0029] In the following, example embodiments will be described more fully with reference to the accompanying drawings, in which example embodiments can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art.

[0030] In the case of no conflict, each embodiment of the present disclosure and each feature in the embodiments can be combined with each other.

[0031] As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0032] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0033] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure and will not be interpreted in an overly literal or overly formal sense unless expressly so defined herein.

[0034] Unless otherwise specified, the term "concentration" used herein refers to mass concentration. The concentration of each substance in a mixed solution refers to the mass concentration of each substance based on the total amount of the mixed solution.

[0035] In some related technologies, large-area perovskite cells are usually prepared in a way of sub-cell series connection, such as Figure 1 As shown in the figure, the area between the P2 slot and the P3 slot in the series connection structure has a perovskite active layer, so it is inevitable to have problems such as direct contact between the metal electrode and the perovskite active layer, exposure of the perovskite active layer, and scribe damage, resulting in a significant reduction in the efficiency and stability of the perovskite cell.

[0036] The present disclosure provides a perovskite cell, wherein the area between the second slot (P2 slot) and the third slot (P3 slot) in the series connection structure does not include a perovskite active layer and a first carrier transport layer.

[0037] According to an embodiment of the present disclosure, as Figure 2 As shown in the figure, the perovskite cell assembly includes a substrate (101), a transparent conductive layer (102), a first carrier transport layer (103), a perovskite active layer (104), a second carrier transport layer (105), and a back electrode layer (106), and the area between the P2 slot and the P3 slot in the series connection structure only includes the back electrode layer and the second carrier transport layer.

[0038] According to the perovskite cell assembly of the present disclosure, as Figure 3 As shown in the figure, the perovskite cell assembly includes a substrate (201), a transparent conductive layer (202), a first carrier transport layer (203), a perovskite active layer (204), a second carrier transport layer (205), an insulating barrier layer (206), and a back electrode layer (207), and the area between the P2 slot and the P3 slot in the series connection structure only includes the back electrode layer, the insulating barrier layer, and the second carrier transport layer.

[0039] The present disclosure also provides a preparation method of a perovskite cell assembly, which includes the following steps:

[0040] P1 scribe step: etching is performed after the preparation of the first carrier transport layer to form a P1 slot;

[0041] P1.5 scribe step: etching after the preparation of the perovskite active layer to form P1.5 line grooves;

[0042] P2 scribe step: etching before the preparation of the back electrode layer to form P2 line grooves; and

[0043] P3 scribe step: etching after the preparation of the back electrode layer to form P3 line grooves.

[0044] According to one embodiment of the present disclosure, as shown in Figure 4 the preparation method of the perovskite battery assembly specifically comprises:

[0045] S1-preparing a substrate with a deposited transparent conductive layer;

[0046] The substrate includes but is not limited to glass, quartz, flexible material, etc., and the transparent conductive layer material includes but is not limited to indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), aluminum doped zinc oxide (AZO), indium zinc oxide (IZO), etc. The glass can be selected from FTO (Fluorine-doped Tin Oxide) glass, ITO (Indium-Tin Oxide) glass, etc.

[0047] The conductive glass is ultrasonically cleaned with detergent, acetone, isopropanol for 10-40 minutes, and then dried.

[0048] S2-forming a first carrier transport layer on the transparent conductive layer;

[0049] Any one of the evaporation method, magnetron sputtering method, spin coating method, CBD method, ALD method is used to prepare the first carrier transport layer on the transparent conductive layer of the substrate. The thickness of the first carrier transport layer is 5-50 nm.

[0050] The material of the first carrier transport layer can be selected according to the type of the battery to correspond to an electron transport layer or a hole transport layer. The electron transport layer material includes but is not limited to C60, PCBM, SnO2, BCP, TiO2, ZnO, etc. The hole transport layer material includes but is not limited to NiOx, Spiro-OMeTAD, PTAA, etc.

[0051] S3-performs P1 scribe with laser etching;

[0052] P1 scribe line can be made by 1064 nm infrared laser and etched to form P1 line groove, the laser frequency is 100-600 kHz, the etching speed is 300-1000 mm / s, and the width of P1 line groove can be 10-50 μm. The first carrier transport layer and transparent conductive layer at the position of P1 line groove are removed by P1 scribe line etching, as shown in Figure 5 .

[0053] S4-Forming perovskite active layer on the first carrier transport layer;

[0054] The perovskite active layer is prepared by any one of slot coating method, doctor blade method, spin coating method, and co-evaporation method. The thickness of the perovskite active layer is 300-650 nm, which covers the surface of the first carrier transport layer and the bottom and sidewall of the P1 line groove.

[0055] The perovskite material can be selected from any one or more of FAMAPbI3, FACsPbI3, FAMACsPbI3 system. The solvent used to form the perovskite solution can be selected from one or more of N, N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), γ-butyrolactone, N-methyl pyrrolidone (NMP), acetonitrile (ACN).

[0056] S5-Performing P1.5 scribe line by laser etching;

[0057] P1.5 scribe line is made by 532 nm green laser and etched to form P1.5 line groove, the laser frequency is 20-300 kHz, the etching speed is 150 mm / s-400 mm / s, and the width of P1.5 line groove can be 100-300 μm. P1.5 line groove is parallel to P1 line groove and keeps a distance of 5-20 μm from P1 line groove to prevent intersection and parallel between line grooves; the perovskite active layer at the position of P1.5 line groove is removed by P1.5 scribe line etching, as shown in Figure 6 .

[0058] S6-Forming second carrier transport layer on the perovskite active layer;

[0059] The second carrier transport layer is prepared on the perovskite active layer by any one of spin coating method, evaporation method, and ALD method. The material of the second carrier transport layer can be selected as corresponding electron transport layer or hole transport layer according to the type of the battery. The electron transport layer material includes but is not limited to C60, PCBM, SnO2, BCP, TiO2, ZnO, etc. The hole transport layer material includes but is not limited to NiOx, Spiro-OMeTAD, PTAA, etc.

[0060] The thickness of the second carrier transport layer is 10-80 nm, which covers the surface of the perovskite active layer and the bottom and sidewall of the P1.5 line groove.

[0061] S7- P2 scribe line is made by laser etching;

[0062] P2 scribe line is made by 532nm green laser in P1.5 line groove, and P2 line groove is formed by etching, laser frequency is 20kHz-300kHz, etching speed is 150mm / s-400mm / s, etching width is 35-100μm.

[0063] P2 line groove is located on the side of P1.5 line groove close to P1 line groove in horizontal direction, parallel to P1.5 line groove and keeping a distance of 5-20μm from the edge of P1.5 line groove. The second carrier transport layer in the position of P2 line groove is removed by P2 scribe line etching, and the surface of the bottom transparent conductive layer is exposed, as shown in Figure 7

[0064] S8- Forming a back electrode layer on the second carrier transport layer;

[0065] The back electrode layer is prepared by any one of the following methods: evaporation method, magnetron sputtering method, and electron beam deposition method. The back electrode layer covers the surface of the second electron transport layer and the bottom and sidewall of the P2 line groove.

[0066] The materials that can be used for the back electrode layer include, but are not limited to, one or more of Au, Cu, Ag, ITO, and IZO.

[0067] S9- P3 scribe line is made by laser etching;

[0068] P3 line groove is etched by 532nm green laser, laser frequency is 100kHz-300kHz, etching speed is 600mm / s-1000mm / s, etching width is 20-80μm. P3 line groove is located on the side of P1.5 line groove away from P1 line groove in horizontal direction, parallel to P2 line groove and keeping a distance of 5-20μm from P2 line groove. The back electrode layer and the second carrier transport layer in the position of P3 line groove are removed by P3 scribe line etching, to realize separation of the back electrode, as shown in Figure 8

[0069] According to another embodiment of the present disclosure, between the steps S6 and S7, a step of forming an insulating barrier layer on the second carrier transport layer is further included, that is, the P2 scribe line step is performed after the preparation of the insulating barrier layer and before the preparation of the back electrode layer.

[0070] The preparation method of the perovskite battery assembly described in the present disclosure solves the problem of etching damage caused by P3 scribe line in conventional large-size perovskite battery assembly and poor stability caused by exposure of perovskite layer after scribe line, and has the following advantages:

[0071] ​​1) P3 scribe line does not pass through the perovskite layer, will not cause scribe damage to the battery, greatly reducing the non-radiative recombination at the scribe line, improving the open circuit voltage of the perovskite battery; at the same time, the perovskite layer will not be exposed due to the line groove, which also improves the long-term stability of the perovskite battery;

[0072] 2) The perovskite active layer only passes through the P1.5 scribe line once etching, and this scribe step is the next step for the preparation of the perovskite active layer, which provides a wider selection of options for repairing the perovskite layer; for example, after the P1.5 scribe step, a passivation layer is prepared by coating or evaporation, which passivates the surface of the perovskite layer and also has a repairing effect on the damaged perovskite parts at the scribe line, which is different from the conventional method of repairing the damage at the scribe line after P2, which will not adversely affect the second carrier transport layer which has been prepared;

[0073] 3) In the existing solution to the problem of P3 scribe line, it is basically necessary to prepare an additional protective layer material or introduce a new processing method, which greatly increases the cost and reduces the production capacity; while in the method of the present disclosure, the efficiency and stability of the perovskite battery are improved by increasing the P1.5 line groove and adjusting the P3 line groove, which has high adaptability to the original process and low cost.

[0074] In order for those skilled in the art to more clearly understand the technical solutions of the present disclosure, the technical solutions of the present disclosure will be described in detail below through specific examples.

[0075] Example 1

[0076] FTO conductive glass with a specification of 50mm x 50mm was selected, and deionized water, acetone and isopropanol were used for cleaning for 30min, respectively. After drying, it was placed in a nitrogen cabinet for temporary storage.

[0077] The cleaned conductive glass was placed in a magnetron sputtering (PVD) equipment, and a nickel oxide layer NiOx was deposited as a hole transport layer. The thickness of the hole transport layer was 15nm.

[0078] After the nickel oxide deposition was completed, P1 scribe line was formed by using 1064nm infrared laser, and the laser frequency was 100kHz, the line groove width was 15μm, and the resistance on both sides was greater than 20MΩ.

[0079] Me-4PACz and Poly-4PAC were selected as SAM materials, DMSO and IPA were selected as solvents, and the volume ratio of the two was 9:1. The SAM material was uniformly dissolved in the composite solvent to form a solution, and the concentration of the SAM material was 0.8mg / ml; then the solution was spin-coated on the substrate surface, and the spin-coating parameters were 3000rp and the spin-coating time was 30s.

[0080] The coated substrate was transferred to a VCD device, with a pressure setting of 20 Pa, a pressure holding time of 40 s, and a VCD platform temperature of 20°C. Subsequently, it was transferred to an annealing device, with an annealing time of 5 minutes and an annealing temperature of 100°C.

[0081] Cs0.15FA0.85PbI3 with a concentration of 1.5 mol was selected as the perovskite material, and a mixture of DMF:DMSO = 4:1 was used as the solvent. The perovskite solution was coated on the SAM layer using a spin coating method. The operating parameters of the spin coating were as follows: first step, 1000 rpm, acceleration 200 rpm / s, time 10 s; second step, 4000 rpm, acceleration 1000 rpm / s, time 32 s. Subsequently, it was transferred to a VCD device, with a pressure holding pressure of 20 Pa, a pressure holding time of 60 s, and a VCD platform temperature of 20°C. Subsequently, it was transferred to an annealing device, with an annealing time of 30 minutes and an annealing temperature of 150°C.

[0082] A 532 nm green laser was selected to perform P1.5 scribing and form a P1.5 line groove, with a laser frequency of 20 kHz, an etching speed of 200 mm / s, and an etching width of 100 μm, leaving a safety distance of 10 μm from the P1 line groove.

[0083] A 532 nm green laser was selected to perform P1.5 scribing and form a P1.5 line groove, with a laser frequency of 20 kHz, an etching speed of 200 mm / s, and an etching width of 100 μm, leaving a safety distance of 10 μm from the P1 line groove. A 532 nm green laser was selected to perform P1.5 scribing and form a P1.5 line groove, with a laser frequency of 20 kHz, an etching speed of 200 mm / s, and an etching width of 100 μm, leaving a safety distance of 10 μm from the P1 line groove.

[0084] A 532 nm green laser was selected to perform P1.5 scribing and form a P1.5 line groove, with a laser frequency of 20 kHz, an etching speed of 200 mm / s, and an etching width of 100 μm, leaving a safety distance of 10 μm from the P1 line groove.

[0085] A 532 nm green laser was selected to perform P1.5 scribing and form a P1.5 line groove, with a laser frequency of 20 kHz, an etching speed of 200 mm / s, and an etching width of 100 μm, leaving a safety distance of 10 μm from the P1 line groove.

[0086] A 532 nm green laser was selected to perform P1.5 scribing and form a P1.5 line groove, with a laser frequency of 20 kHz, an etching speed of 200 mm / s, and an etching width of 100 μm, leaving a safety distance of 10 μm from the P1 line groove.

[0087] The method was repeated three times to prepare samples 1-3.

[0088] Example 2

[0089] The same laser etching method as in Example 1 was used, except that after P1.5 scribing, a fullerene (C60) layer was prepared on the perovskite layer by evaporation at a rate of 0.1 nm / s. A layer of fullerene (C60) was prepared at a rate of 0.5 A / s, followed by a 15 nm SnO2 layer prepared by atomic layer deposition, replacing the 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) layer in Examples 1-3. This process was repeated three times to produce Samples 4-6.

[0090] Comparative Example 1

[0091] The preparation method of Example 1 was followed, except that after the perovskite layer was prepared, the P1.5 line groove was not etched, and C60 and BCP were directly evaporated using the same process, and then the P2 line groove was etched, the P2 line groove was parallel to P1 but did not intersect or overlap, and the electron transport layer, perovskite layer, and hole transport layer were etched in turn. After P2 etching was completed, Cu was evaporated using the same parameters, and then the P3 line groove was etched, the P3 line groove etched the back electrode layer, electron transport layer, perovskite layer, and hole transport layer in turn. The laser etching frequency and etching speed of P2 and P3 were the same as in Examples 1-3, but because the P2 and P3 etched layers in the comparative example contained the perovskite active layer, the power of P2 and P3 in the comparative example was increased by 3% compared to the examples, to ensure that the transparent conductive layer was etched. This process was repeated three times to produce Samples 7-9.

[0092] Comparative Example 2

[0093] The preparation method of Example 2 was followed, except that after the perovskite layer was prepared, the P1.5 line groove was not etched, and C60 and SnO2 were directly prepared using the same process, and then the P2 line groove was etched, the P2 line groove was parallel to P1 but did not intersect or overlap, and the electron transport layer, perovskite layer, and hole transport layer were etched in turn. After P2 etching was completed, Cu was evaporated using the same parameters, and then the P3 line groove was etched, the P3 line groove etched the back electrode layer, electron transport layer, perovskite layer, and hole transport layer in turn. The laser etching frequency and etching speed of P2 and P3 were the same as in Comparative Examples 7-9. This process was repeated three times to produce Samples 10-12.

[0094] Table 1: Comparison of test data of each example and comparative example IV

[0095]

[0096]

[0097] Table 2: Comparison of test data of each example and comparative example IV after 48 hours of storage

[0098] Sample PCE (%) Voc (V) Jsc(mA / cm 2 )]]> FF (%) ΔPCE (%) Sample 1 18.36 8.01 20.83 77.01 -0.17 Sample 2 17.76 7.91 20.18 77.89 -0.61 Sample 3 15.60 7.82 20.02 69.81 -0.18 Sample 4 17.15 7.88 21.99 69.31 -0.50 Sample 5 16.83 7.71 22.34 68.39 -0.22 Sample 6 15.70 7.67 22.25 64.39 -0.43 Sample 7 12.68 6.56 21.63 62.49 -2.43 Sample 8 14.61 6.94 21.86 67.40 -0.84 Sample 9 14.02 7.20 21.44 63.58 -1.81 Sample 10 13.30 7.11 21.48 60.96 -1.44 Sample 11 13.65 6.95 21.75 63.22 -1.27 Sample 12 14.12 7.09 22.20 62.79 -0.94

[0099] As can be seen from the data in Table 1, the open-circuit voltage of the sample of the example is higher, which brings higher photoelectric conversion efficiency to the battery, thanks to the reduction of non-radiative recombination at P3. The electrical properties of the sample of the example and the sample of the comparative example were tested again after the samples were exposed to indoor environment for 48 h without encapsulation treatment, and the data are shown in Table 2, wherein ΔPCE is the photoelectric conversion efficiency of the battery after 48 h minus the initial efficiency. As can be seen from Table 2, the sample of the example has smaller efficiency decay under the same environment. The above results show that the method for preparing the perovskite battery assembly provided by the present disclosure has significant advantages in improving the open-circuit voltage and long-term stability of the perovskite battery.

[0100] Example embodiments have been disclosed herein and, although the use of specific terms is expressly used herein, they are intended in the sense only of general descriptive purpose and should not be construed as limiting. In some embodiments, it will be apparent to those skilled in the art from this disclosure that the features, characteristics, and / or elements described in connection with a particular embodiment can be used, either alone or in combination with other embodiments, unless expressly stated otherwise. Thus, those skilled in the art will understand that various changes in form and detail can be made without departing from the scope of the disclosure as set forth in the appended claims.

Claims

1. A perovskite solar cell module, characterized in that, The region between the P2 and P3 slots in its series structure does not include the perovskite active layer and the first carrier transport layer.

2. The perovskite solar cell module according to claim 1, characterized in that, The region between slots P2 and P3 in the series structure includes only the back electrode layer and the second carrier transport layer.

3. The perovskite solar cell module according to claim 1, characterized in that, The region between slots P2 and P3 in the series structure includes only the back electrode layer, the insulating barrier layer, and the second carrier transport layer.

4. A method for preparing a perovskite solar cell module, characterized in that, It includes the following steps: P1 etching step: After the first carrier transport layer is prepared, etching is performed to form P1 grooves; P1.5 etching step: After the perovskite active layer is prepared, etching is performed to form P1.5 grooves; P2 etching step: Etching is performed before the back electrode layer is prepared to form P2 grooves; as well as P3 etching step: After the back electrode layer is prepared, etching is performed to form P3 grooves.

5. The method for preparing a perovskite solar cell module according to claim 4, characterized in that, The P2 scribing step is performed after the second carrier transport layer is prepared and before the back electrode layer is prepared.

6. The method for preparing a perovskite solar cell module according to claim 4, characterized in that, The P2 scribing step is performed after the insulating barrier layer is prepared and before the back electrode layer is prepared.

7. The method for preparing a perovskite solar cell module according to claim 4, characterized in that, In the P1 scribing step, the width of the P1 groove is 10-50 μm.

8. The method for preparing a perovskite solar cell module according to claim 4, characterized in that, In the P1.5 scribing step, the width of the P1.5 groove is 100-300μm, and the P1.5 groove is parallel to the P1 groove and maintains a distance of 5-20μm from the P1 groove.

9. The method for preparing a perovskite solar cell module according to claim 4, characterized in that, In the P2 scribing step, the width of the P2 groove is 35-100μm. The P2 groove is located on the side of the P1.5 groove in the horizontal direction close to the P1 groove, parallel to the P1.5 groove, and maintains a distance of 5-20μm from the edge of P1.

5.

10. The method for preparing a perovskite solar cell module according to claim 4, characterized in that, In the P3 scribing step, the width of the P3 groove is 20-80μm. The P3 groove is located on the side of the P1.5 groove away from the P1 groove in the horizontal direction, parallel to the P2 groove, and at a distance of 5-20μm from the P2 groove.

11. The method for preparing a perovskite solar cell module according to claim 4, characterized in that, The P1 scribing step, P1.5 scribing step, P2 scribing step and P3 scribing step are performed by laser etching.

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