Display panel

Abstract

The embodiment of the invention provides a display panel. The display panel is provided with a display area, a hole area and a middle area. The middle area is located between the display area and the hole area. The display panel comprises a substrate, a driving circuit layer and a light emitting device layer. The driving circuit layer is located on the substrate. A groove is formed in the driving circuit layer, is located in the middle area and extends towards the substrate in the driving circuit layer. The driving circuit layer further comprises a partition part, the partition part is located in the middle area and comprises an epitaxial part, the epitaxial part extends out of the side wall of the groove and extends towards the groove, and the epitaxial part is suspended relative to the groove bottom of the groove. The light-emitting device layer is located on the side, away from the substrate, of the driving circuit layer and comprises one or more light-emitting function layers, and at least one light-emitting function layer is formed by breaking the epitaxial part. The extension part has a first size d1 along the extension direction of the extension part; the epitaxial portion has a second size d2 along the direction of the partition member pointing to the substrate, and d2 is less than d1, so as to improve the partition effect of the partition member on the light-emitting functional layer.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display panel. BACKGROUND

[0002] At present, in order to meet the shooting needs of electronic devices such as mobile phones, the part of the display panel corresponding to the camera is often removed to form a light transmission hole. On the basis of setting the light transmission hole, the risk of water and oxygen and other external pollutants invading the light-emitting layer in the display area through the organic film layer of the side wall around the light transmission hole is increased. The related technology often uses a partition structure to partition the light-emitting organic film layer in a certain range around the light transmission hole to cut off the transmission path of water and oxygen. However, the partition effect of the partition structure of the related technology has the risk of not disconnecting the light-emitting film layer and other organic film layers. SUMMARY

[0003] The display panel provided by the embodiments of the present application improves the partition effect of the partition member on the light-emitting functional layer to at least partially solve the above technical problems.

[0004] In order to achieve the above-mentioned purpose, according to a first aspect of the present application, a display panel is provided, the display panel has a display area, a hole area and an intermediate area, the intermediate area is located between the display area and the hole area. The display panel comprises a substrate, a driving circuit layer and a light-emitting device layer. The driving circuit layer is located on the substrate. The driving circuit layer is internally provided with a groove, the groove is located in the intermediate area and extends in the driving circuit layer towards the substrate. The driving circuit layer further comprises a partition member, the partition member is located in the intermediate area and comprises an extension part, the extension part extends out from the side wall of the groove and extends towards the groove, and the extension part is suspended relative to the groove bottom. The light-emitting device layer is located on the side of the driving circuit layer away from the substrate, and comprises one or more light-emitting functional layers, at least one of the light-emitting functional layers is disconnected by the extension part. Wherein, along the extension direction of the extension part, the extension part has a first size d1; along the direction of the partition member pointing to the substrate, the extension part has a second size d2; wherein d2 < d1.

[0005] In the display panel of the embodiments of the present application, by controlling the second size d2 of the extension part to be smaller than the first size d1 of the extension part, that is, the length of the extension part extending out of the side wall of the groove is greater than the thickness of the extension part, it is ensured that the size of the extension part extending out of the side wall of the groove is large enough to ensure the partition effect of the extension part on the light-emitting functional layer. In this way, the risk of water and oxygen and other external pollutants extending along the light-emitting functional layer to the display area is reduced, and the problem of the light-emitting functional layer in the display area being eroded by external pollutants and causing display abnormalities is improved. BRIEF DESCRIPTION OF DRAWINGS

[0006] Figure 1A plan view of a display panel provided in an exemplary embodiment of the present application;

[0007] Figure 2 A partial structure view of a display area of a display panel provided in an exemplary embodiment of the present application;

[0008] Figure 3 A cross-sectional structure view of a middle area of a display panel provided in an exemplary embodiment of the present application;

[0009] Figure 4 A plan view of a display panel provided in an exemplary embodiment of the present application; Figure 3 A partial structure view of a middle area shown in the plan view;

[0010] Figure 5 Another cross-sectional structure view of a middle area of a display panel provided in an exemplary embodiment of the present application;

[0011] Figures 6(A) to 6(D) A process view of a method for forming a recess and a partition member in a middle area shown in the plan view; Figure 3 Figure 4

[0012] BRIEF DESCRIPTION OF THE DRAWINGS

[0013] 100, display panel; AA, display area; HA, hole area; MA, middle area;

[0014] 1, substrate; 11, first organic layer; 12, first barrier layer; 13, second organic layer; 14, second barrier layer;

[0015] 2, drive circuit layer;

[0016] 21, pixel drive circuit; T, transistor; 211, first transistor; 212, second transistor;

[0017] 22, semiconductor layer; 221, first semiconductor layer; 222, second semiconductor layer;

[0018] 23, metal layer; 231, first metal layer; 232, second metal layer; 233, third metal layer; 234, fourth metal layer; 235, fifth metal layer; 236, sixth metal layer; 2361, light shielding member; 237, top metal layer;

[0019] 24, insulating layer; 241, first insulating layer; 242, second insulating layer; 243, third insulating layer; 244, fourth insulating layer; 245, fifth insulating layer; 246, sixth insulating layer; 2461, organic layer; 247, seventh insulating layer; 2471, opening; 2472, through opening; 248, eighth insulating layer;

[0020] ​​25, groove;

[0021] 26, partition; 261, extension; 261, extension; 2611, bottom surface; 2612, top surface; 2613, end surface; 262, support;

[0022] 27, metal barrier;

[0023] S, gap;

[0024] 271, first stack; 272, second stack;

[0025] 3, light emitting device layer; 31, first electrode layer; 32, light emitting functional layer; 33, second electrode layer;

[0026] 4, thin film encapsulation layer; 41, first inorganic encapsulation layer; 42, organic encapsulation layer; 43, second inorganic encapsulation layer;

[0027] Initial groove G;

[0028] 5, mask layer. DETAILED DESCRIPTION

[0029] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by a person skilled in the art without creative work fall within the scope of protection of the present application.

[0030] Figure 1 A plan view of a display panel provided in an exemplary embodiment of the present application.

[0031] Referring to Figure 1 The present application provides a display panel 100. The display panel 100 has a display area AA, a hole area HA, and an intermediate area MA. The part of the display panel 100 corresponding to the display area AA is used to display a picture. The part of the display panel 100 corresponding to the hole area HA has a high transmittance to light, so that a light sensor can be arranged on one side of the display panel 100, and the light sensor overlaps the hole area HA to improve the photosensitive effect of the light sensor. The intermediate area MA is located between the display area AA and the hole area HA. The intermediate area MA can include a non-display area.

[0032] Figure 2 A partial structure schematic view of a display area of a display panel provided in an exemplary embodiment of the present application.

[0033] Referring to Figure 2The display panel 100 can include a substrate 1, a driving circuit layer 2, and a light emitting device layer 3. The driving circuit layer 2 is located on the substrate 1. The light emitting device layer 3 is located on a side of the driving circuit layer 2 facing away from the substrate 1.

[0034] The substrate 1 can include an organic layer such that the display panel 100 has a bendable property. In some embodiments, the substrate 1 includes a first organic layer 11, a first barrier layer 12, a second organic layer 13, and a second barrier layer 14, which are sequentially stacked. In some embodiments, the first organic layer 11 and the second organic layer 13 can include, but are not limited to, polyimide, and the first barrier layer 12 and the second barrier layer 14 can include, but are not limited to, at least one of silicon oxide, silicon nitride, and silicon oxynitride.

[0035] The light emitting device layer 3 includes a first electrode layer 31, one or more light emitting functional layers 32, and a second electrode layer 33. The second electrode layer 33 is located on a side of the first electrode layer 31 facing away from the driving circuit layer 2. The one or more light emitting functional layers 32 are located between the first electrode layer 31 and the second electrode layer 33. The first electrode layer 31 can include a plurality of spaced-apart first electrodes, also referred to as anodes. The one or more light emitting functional layers 32 include an organic light emitting layer such that the light emitting device layer 3 includes an organic light emitting diode. The one or more light emitting functional layers 32 can also include one or more of an electron transport layer, an electron injection layer, a hole transport layer, and a hole injection layer. The light emitting functional layers 32 each include an organic material.

[0036] The display panel 100 further includes a thin film encapsulation layer 4. The thin film encapsulation layer 4 is located on a side of the light emitting device facing away from the substrate 1. The thin film encapsulation layer 4 blocks moisture and oxygen, improving a problem of the organic material of the light emitting functional layer 32 being eroded by moisture and oxygen and shortening a service life of the display panel 100. The thin film encapsulation layer 4 can include a first inorganic encapsulation layer 41, an organic encapsulation layer 42, and a second inorganic encapsulation layer 43, which are sequentially stacked. The first inorganic encapsulation layer 41 and the second inorganic encapsulation layer 43 can include, but are not limited to, at least one of silicon oxide, silicon nitride, and silicon oxynitride. The organic encapsulation layer 42 can include, but is not limited to, polyimide.

[0037] The driving circuit layer 2 includes a plurality of pixel driving circuits 21. The pixel driving circuit 21 is located in a display area AA and includes a plurality of transistors T. In some embodiments, the plurality of transistors T can include a first transistor 211 and a second transistor 212, an active layer of the first transistor 211 can be different from an active layer of the second transistor 212. In some embodiments, the first transistor 211 can include a low-temperature polysilicon transistor, and the second transistor 212 can include a metal oxide transistor.

[0038] In some embodiments, the driving circuit layer 2 includes one or more layers of semiconductor layer 22, multiple layers of metal layer 23, and multiple layers of insulating layer 24. The insulating layer 24 is arranged between adjacent metal layers 23.

[0039] In some embodiments, the one or more layers of semiconductor layer 22 can include a first semiconductor layer 221 including low-temperature polysilicon. The multiple layers of metal layer 23 include a first metal layer 231 located on a side of the first semiconductor layer 221 facing away from the substrate 1. The first metal layer 231 includes a first gate electrode, which overlaps the first semiconductor layer 221, in which case the first gate electrode is a top gate of the first transistor 211.

[0040] In some embodiments, the first metal layer 231 can also be located between the first semiconductor layer 221 and the substrate 1, in which case the first gate electrode is a bottom gate of the first transistor 211.

[0041] In some embodiments, the multiple layers of insulating layer 24 can include a first insulating layer 241 located between the first semiconductor layer 221 and the first metal layer 231.

[0042] In some embodiments, the multiple layers of metal layer 23 further include a second metal layer 232 located on a side of the first semiconductor layer 221 facing away from the substrate 1. The second metal layer 232 can include a first source-drain electrode. The first source-drain electrode includes a first source electrode and a first drain electrode, both of which are connected to the first semiconductor layer 221.

[0043] In some embodiments, the first metal layer 231 is located between the second metal layer 232 and the first semiconductor layer 221.

[0044] In some embodiments, the multiple layers of metal layer 23 further include a third metal layer 233 located between the first metal layer 231 and the second metal layer 232. The third metal layer 233 includes an electrode plate, which overlaps the first gate electrode to form a capacitor in the pixel driving circuit 21.

[0045] In some embodiments, the one or more layers of semiconductor layer 22 can include a second semiconductor layer 222 including a metal oxide. The second semiconductor layer 222 is located on a side of the first semiconductor layer 221 facing away from the substrate 1. The multiple layers of metal layer 23 further include a fourth metal layer 234 including a second gate electrode, which overlaps the second semiconductor layer 222. The fourth metal layer 234 can be located on a side of the second semiconductor layer 222 facing away from the substrate 1, i.e., the second gate electrode is a top gate.

[0046] In some embodiments, the second semiconductor layer 222 can be located between the third metal layer 233 and the fourth metal layer 234. The second metal layer 232 can be located on a side of the fourth metal layer 234 facing away from the substrate 1. The second metal layer 232 can further include a second source-drain electrode including a second source and a second drain, the second source and the second drain being connected to the second semiconductor layer 222.

[0047] In some embodiments, the multilayer insulating layer 24 can further include a second insulating layer 242, a third insulating layer 243, a fourth insulating layer 244, and a fifth insulating layer 245. The second insulating layer 242 is located between the first metal layer 231 and the third metal layer 233. The third insulating layer 243 is located between the third metal layer 233 and the second semiconductor layer 222. The fourth insulating layer 244 is located between the second semiconductor layer 222 and the fourth metal layer 234. The fifth insulating layer 245 is located between the fourth metal layer 234 and the second metal layer 232.

[0048] In some embodiments, the multilayer metal layer 23 can further include a fifth metal layer 235 located on a side of the second metal layer 232 facing away from the substrate 1. The fifth metal layer 235 can include a connection electrode through which at least one of the first source-drain electrode and the second source-drain electrode is connected to the first electrode. In some embodiments, the first transistor 211 is connected to the first electrode through the connection electrode.

[0049] In some embodiments, the multilayer insulating layer 24 can further include a sixth insulating layer 246 and a seventh insulating layer 247. The sixth insulating layer 246 is located between the fifth metal layer 235 and the second metal layer 232. The seventh insulating layer 247 is located between the fifth metal layer 235 and the light emitting device layer 3.

[0050] In some embodiments, the multilayer metal layer 23 can include a sixth metal layer 236 including a light shielding member 2361. The light shielding member 2361 is located between the at least one transistor T and the substrate 1 to improve the light leakage problem of the transistor T under light conditions.

[0051] In some embodiments, the multilayer insulating layer 24 can further include an eighth insulating layer 248 located between the sixth metal layer 236 and the first semiconductor layer 221.

[0052] In some embodiments, the first metal layer 231 to the sixth metal layer 236 can include at least one of molybdenum, aluminum, titanium, copper, and silver.

[0053] In some embodiments, the first to fifth insulating layers 241-245 and the eighth insulating layer 248 can each be an inorganic insulating layer. The inorganic insulating layer can include one or more of silicon oxide, silicon nitride, and silicon oxynitride. The sixth insulating layer 246 and the seventh insulating layer 247 can be an organic insulating layer. The organic insulating layer can include, but is not limited to, polyimide.

[0054] In some embodiments, the hole region HA is provided with a through hole (not shown in the figure) that penetrates through the light emitting device layer 3 and the driving circuit layer 2. The through hole can further penetrate through the substrate 1.

[0055] Figure 3 A cross-sectional structure diagram of a middle region of a display panel provided in an exemplary embodiment of the present application. Figure 4 A cross-sectional structure diagram of a middle region of a display panel provided in an exemplary embodiment of the present application. Figure 3 A partial structure diagram of the middle region shown.

[0056] In some embodiments, referring to Figure 3 and Figure 4 The interior of the driving circuit layer 2 is provided with a recess 25. The recess 25 is located in the middle region MA and extends towards the substrate 1 in the driving circuit layer 2. The driving circuit layer 2 further includes a partition member 26 located in the middle region MA and including an extension portion 261. The extension portion 261 extends from the sidewall of the recess 25 and extends towards the recess 25, and the extension portion 261 is suspended relative to the bottom of the recess 25. At least one light emitting functional layer 32 is disconnected by the extension portion 261. The partition member 26 in combination with the recess 25 disconnects the at least one light emitting functional layer 32 in the middle region MA. The transmission path of moisture and oxygen from the light emitting functional layer 32 in the hole region HA to the display region AA is cut off in the middle region MA of the driving circuit layer 2, which improves the problem of the light emitting functional layer 32 in the display region AA being eroded by moisture and oxygen and shortening the service life of the display panel 100.

[0057] It should be noted that Figure 3 Only one light emitting functional layer 32 in the light emitting device layer is disconnected by the extension portion 261, and in fact, multiple light emitting functional layers 32 can be disconnected by the extension portion 261.

[0058] In some embodiments, referring to Figure 4The extension part 261 has a first size d1 along the extension direction of the extension part 261. The extension part 261 has a second size d2 along the direction in which the partition member 26 points to the substrate 1. Herein, d2 < d1. That is, the length of the extension part 261 extending out of the sidewall of the groove 25 is greater than the thickness of the extension part 261. The size of the extension part 261 extending out of the sidewall of the groove 25 is large, which improves the partition effect of the extension part 261 on the one or more light-emitting functional layers 32. In this way, the risk of external contaminants such as moisture and oxygen extending along the light-emitting functional layer 32 to the display area AA is reduced, and the problem of the light-emitting functional layer 32 of the display area AA being eroded by external contaminants to cause display abnormalities is improved.

[0059] In some embodiments, d1 < 3d2, which improves the problem that the length of the extension part 261 is too long and the light-emitting functional layer 32 and the like deposited thereon causes the extension part 261 to bend or even break.

[0060] In some embodiments, 1.2d2 < d1 < 2.5d2, so that the extension part 261 has a suitable length, which ensures that the extension part 261 can partition the light-emitting functional layer 32, while improving the problem of the extension part 261 bending or even breaking. Alternatively, 1.5d2 < d1 < 2.2d2, or 1.2d2 < d1 < 2d2.

[0061] In some embodiments, the first size d1 is 0.8 microns to 2.5 microns, so that the extension part 261 has a suitable length, which ensures that the extension part 261 can partition the light-emitting functional layer 32, while improving the problem of the extension part 261 bending or even breaking. Alternatively, the first size d1 can be 1 micron to 2.3 microns; or the first size d1 can be 1.2 microns to 2 microns, or the first size d1 can be 1 micron to 1.8 microns.

[0062] In an exemplary embodiment, the first size d1 can be 0.8 microns, 1 micron, 1.2 microns, 1.4 microns, 1.6 microns, 1.8 microns, 2 microns, 2.2 microns, or 2.5 microns.

[0063] In some embodiments, the second size d2 is 5000 angstroms to 9000 angstroms, which ensures that the extension part 261 has a suitable thickness, which ensures that the extension part 261 can partition the light-emitting functional layer 32, while improving the problem of the extension part 261 bending or even breaking. Alternatively, the second size d2 can be 6000 angstroms to 8500 angstroms; or the second size d2 can be 6500 angstroms to 8000 angstroms; or the second size d2 can be 7000 angstroms to 8500 angstroms.

[0064] In an exemplary embodiment, the second size d2 can be 5000 angstroms, 6000 angstroms, 7000 angstroms, 8000 angstroms, or 9000 angstroms.

[0065] In some embodiments, referring to Figure 4 , two extension parts 261 extend from the groove 25, and the two extension parts 261 extend towards each other and are spaced apart from each other, and the gap S between the two extension parts 261 has a third size d3. Wherein, d3≥2.5d1. In this way, the two extension parts 261 can improve the effect of partitioning the light-emitting functional layer 32. And, the gap S between the two extension parts 261 is ensured to be large enough, and the inorganic encapsulating layer and the organic encapsulating layer 42 in the thin film encapsulating layer 4 can be formed in the groove 25 through the gap S to cover the film layer on the groove wall of the groove 25, thereby reducing the risk of moisture and oxygen transmitting to the display area AA through the film layer on the groove wall of the groove 25.

[0066] In some embodiments, d3≤10d1, which improves the problem that the space occupied by the gap S is too large, resulting in that the number of grooves 25 that can be arranged in the middle area MA is small, or the size of the gap S in the middle area MA is too large, resulting in that the area of the display area AA is reduced.

[0067] In some embodiments, 3d1≤d3≤9d1, so that the film layer in the groove 25 of the thin film encapsulating layer 4 has good coverage, and at the same time, it is beneficial to arrange more grooves 25 in the middle to partition the light-emitting functional layer 32 or increase the area of the display area AA. Alternatively, 4d1≤d3≤8.5d1, or 5d1≤d3≤7.5d1.

[0068] In some embodiments, referring to Figure 4 , the partitioning member 26 further comprises a supporting part 262 connected with the extension part 261. The supporting part 262 supports the extension part 261. In some embodiments, the supporting part 262 is integrally formed with the extension part 261, which simplifies the manufacturing process of the partitioning member 26.

[0069] In some embodiments, referring to Figure 2 and Figure 3 , the driving circuit layer 2 comprises a top metal layer 237. The top metal layer 237 is the metal layer 23 farthest from the substrate 1 in the driving circuit layer 2. The top metal layer 237 comprises the partitioning member 26. Since the partitioning member 26 is located in the top metal layer 237, the risk of damage to the partitioning member 26 caused by the etching process of other metal layers 23 can be avoided.

[0070] In some embodiments, in the case where the plurality of metal layers 23 simultaneously comprises the second metal layer 232 and the fifth metal layer 235, the top metal layer 237 can be the fifth metal layer 235, and at this time, the fifth metal layer 235 can comprise the partitioning member 26.

[0071] In some embodiments, referring to Figure 4In the case that the fifth metal layer 235 includes the partition member 26, the seventh insulating layer 247 is further arranged on the partition member 26 to protect at least part of the partition member 26. The seventh insulating layer 247 further includes an opening 2471 that at least exposes the extension part 261 and overlaps with the groove 25, that is, the seventh insulating layer 247 on the extension part 261 and the seventh insulating layer 247 in the groove 25 are both removed.

[0072] In some embodiments, the included angle between the side of the opening 2471 and the partition member 26 is greater than 90 degrees, the inorganic encapsulation layer in the thin film encapsulation layer 4 has better film-forming property and coverage at the junction of the side of the opening 2471 and the partition member 26, the risk of the inorganic encapsulation layer being broken due to excessive stress at this position is reduced, and the encapsulation effect of the thin film encapsulation layer 4 on the junction of the side of the opening 2471 and the partition member 26 is improved.

[0073] In some embodiments, in the case that the multilayer metal layer 23 includes the second metal layer 232 but does not include the fifth metal layer 235, the top layer metal layer 237 can be the second metal layer 232.

[0074] The groove 25 can be arranged around the hole region HA, and the partition member 26 is also annular. In some embodiments, in the direction pointing from the middle region MA to the hole region HA, the size D1 of the groove 25 can be greater than or equal to 5 microns to ensure that the partition member 26 in combination with the groove 25 can block the light-emitting functional layer 32.

[0075] In some embodiments, the groove 25 is arranged in at least one of the inorganic insulating layer of the driving circuit layer 2 and the metal layer 23. Since the inorganic insulating layer and the metal layer 23 have better barrier properties to moisture and oxygen, when the groove 25 is arranged in these film layers, the risk of moisture and oxygen passing through the inorganic insulating layer and the metal layer 23 around the groove 25 to the display region AA is lower.

[0076] In some embodiments, the transistor T is located between the substrate 1 and the partition member 26 and includes a semiconductor layer, a gate, and a source-drain electrode. The source-drain electrode is connected to the semiconductor layer, and the gate overlaps the semiconductor layer. The second metal layer 232 and the first metal layer 231 are located between the partition member 26 and the substrate 1, and the second metal layer 232 is located between the first metal layer 231 and the partition member 26. The second metal layer includes the source-drain electrode, and the first metal layer includes the gate. The groove 25 can have a groove bottom located between the second metal layer 232 and the first metal layer 231. Since the film layers between the second metal layer 232 and the first metal layer 231 are all inorganic insulating layers and metal layers 23, and the distance between the two ensures that the groove 25 has a suitable depth, the risk of moisture and oxygen invading the groove 25 from the substrate 1 below the groove 25 is reduced, and the thin film encapsulation layer 4 has good film-forming property and coverage in the groove 25, thereby improving the encapsulation reliability of the thin film encapsulation layer 4 on the film layers in the groove 25.

[0077] In some embodiments, referring to Figure 3 and Figure 4 the recess 25 extends from the second metal layer 232 into a third insulating layer 243, which is between the second metal layer 232 and the first metal layer 231, and the bottom of the recess 25 is in the third insulating layer 243.

[0078] Referring to Figure 4 the recess 25 separates the drive circuit layer 2 into a first stack 271 and a second stack 272, and the recess 25 is between the first stack 271 and the second stack 272. In some embodiments, the side of the first stack 271 and the side of the second stack 272 together define the recess 25.

[0079] In some embodiments, the drive circuit layer 2 further comprises an organic layer 2461, which covers at least part of the side of the first stack 271 and at least part of the side of the second stack 272, and is between the recess 25 and the first stack 271, and between the recess 25 and the second stack 272. In some embodiments, referring to Figure 4 in the case where the fifth metal layer 235 comprises the partition 26, the sixth insulating layer 246 can comprise the organic layer 2461.

[0080] In some embodiments, along a direction from the middle area MA to the hole area HA, the plurality of recesses 25 are arranged at intervals, and each recess 25 is provided with one or two opposite spacers.

[0081] In some embodiments, the plurality of recesses 25 can comprise a first recess (not shown in the figure) and a second recess (not shown in the figure). The first recess is between the hole area HA and the second recess. The depth of the first recess can be greater than the depth of the second recess. In this way, since the depth of the first recess closer to the hole area HA is relatively deeper, it provides more film-forming space for the thin film encapsulation layer 4, improving the encapsulation effect of the thin film encapsulation layer 4 in the first recess. And since the depth of the second recess closer to the hole area HA is relatively shallower, it reduces the risk of moisture and oxygen directly entering the second recess through the substrate 1 below the second recess.

[0082] In some embodiments, as Figure 4As shown, the epitaxial portion 261 includes a bottom surface 2611, a top surface 2612, and an end surface 2613. The bottom surface 2611 is located on a side of the top surface 2612 close to the substrate 1. The end surface 2613 is located at an end of the epitaxial portion 261 away from the groove wall of the groove 25 and is connected between the top surface 2612 and the bottom surface 2611. An included angle between the end surface 2613 and the bottom surface 2611 is greater than or equal to 45 degrees and less than 90 degrees. In this way, the stress concentration problem of the inorganic encapsulation layer in the thin film encapsulation layer 4 at the corner between the bottom surface 2611 and the end surface 2613 of the epitaxial portion 261 is improved, the film formability of the thin film encapsulation layer 4 is improved, and the encapsulation effect of the thin film encapsulation layer 4 on the partition member 26 is improved.

[0083] In some embodiments, the included angle between the end surface 2613 and the bottom surface 2611 is 60 degrees to 75 degrees, the stress concentration problem of the inorganic encapsulation layer in the thin film encapsulation layer 4 at the corner between the bottom surface 2611 and the end surface 2613 of the epitaxial portion 261 is improved, and the process capability of the process is adapted at the same time.

[0084] In some exemplary embodiments, the angle between the end surface 2613 and the bottom surface 2611 can be 60 degrees, 65 degrees, 70 degrees, or 75 degrees.

[0085] In some embodiments, the included angle between the end surface 2613 and the top surface 2612 is greater than 90 degrees, the stress concentration problem of the inorganic encapsulation layer in the thin film encapsulation layer 4 at the corner between the top surface 2612 and the end surface 2613 of the epitaxial portion 261 is improved, the film formability of the thin film encapsulation layer 4 is improved, and the encapsulation effect of the thin film encapsulation layer 4 on the partition member 26 is improved.

[0086] In some embodiments, as shown in Figure 4 , the included angle between the epitaxial portion 261 and the side wall of the groove 25 at the connection L1 and between the side wall of the groove 25 and the epitaxial portion 261 is greater than 90 degrees. In this way, the film formability and coverage of the inorganic encapsulation layer in the thin film encapsulation layer 4 at the connection L1 of the side wall of the groove 25 and the epitaxial portion 261 are better, the risk of fracture of the inorganic encapsulation layer at this position due to excessive stress is reduced, and the encapsulation effect of the thin film encapsulation layer 4 on the connection of the epitaxial portion 261 and the side wall of the groove 25 is improved.

[0087] In some embodiments, the included angle between the epitaxial portion 261 and the side wall of the groove 25 at the connection L1 and between the side wall of the groove 25 and the epitaxial portion 261 is greater than or equal to 100 degrees and less than or equal to 160 degrees, the risk of fracture of the inorganic encapsulation layer at the connection of the epitaxial portion 261 and the side wall of the groove 25 is reduced, and the difficulty of forming the groove 25 is reduced at the same time.

[0088] Figure 5 Another partial structure diagram of the middle area of the display panel provided in the exemplary embodiments of the present application is shown.

[0089] In some embodiments, referring to Figure 5 The drive circuit layer 2 further comprises one or more metal barriers 27 located in the middle area MA; at least one metal barrier 27 is located at the bottom of the groove 25, and / or at least one metal barrier 27 is located between the groove 25 and the substrate 1. In this way, the metal barrier 27 blocks the moisture and oxygen entering from the substrate 1 below, thereby reducing the risk of moisture and oxygen entering the groove 25 from the bottom of the groove 25 and entering the display area AA through the sidewall of the groove 25.

[0090] In some embodiments, the groove 25 extends in the drive circuit layer 2 to expose the metal barrier 27, reducing the risk of moisture and oxygen entering the groove 25 from the bottom of the groove 25.

[0091] In some embodiments, the thickness of the metal barrier 27 is greater than or equal to the thickness of the light shielding member 2361. Since the thickness of the metal barrier 27 is greater than or equal to the thickness of the light shielding member 2361, the metal barrier 27 has a greater thickness, improving the barrier performance of the metal barrier 27 to moisture and oxygen.

[0092] In some embodiments, the metal barrier 27 and the light shielding member 2361 are located in the same metal layer 23, i.e., the metal barrier 27 is also located in the sixth metal layer 236, to simultaneously form the metal barrier 27 and the light shielding member 2361, simplifying the manufacturing process of the display panel 100. And since the sixth metal layer 236 is the metal layer 23 closest to the substrate 1 in the drive circuit layer 2, the metal barrier 27 can block moisture and oxygen entering from the substrate 1 more quickly, improving the problem of moisture and oxygen entering the drive circuit layer 2 below the groove 25. In addition, when the groove 25 extends to expose the metal barrier 27, the distance between the bottom of the groove 25 and the substrate 1 is closer, i.e., the depth of the groove 25 is deeper, and the metal barrier 27 is arranged between the substrate 1 and the groove 25, which can improve the problem of moisture and oxygen entering the groove 25 with a deeper depth.

[0093] The following describes the formation method of the middle groove and the partition member shown in Figure 4 . Figures 6(A) to 6(D) The process schematic diagram of the formation method of the middle groove and the partition member shown in Figure 3 and Figure 4 .

[0094] Referring to Fig. 6(A), a sixth metal layer 236 (not shown), an eighth insulating layer 248, a first semiconductor layer 221 (not shown), a first insulating layer 241, a first metal layer 231 (not shown), a second insulating layer 242 (not shown), a third metal layer 233, a third insulating layer 243, a second semiconductor layer 222, a fourth insulating layer 244, a fourth metal layer 234 (not shown), and a fifth insulating layer 245 are sequentially formed on the substrate 1.

[0095] Referring to Fig. 6(A), an initial groove G is formed through the fifth insulating layer 245 and the fourth insulating layer 244 and extending to the third insulating layer 243.

[0096] Referring to Fig. 6(B), a second metal layer 232 is formed on the fifth insulating layer 245, the second metal layer 232 including two raised metal pieces on opposite sides of the initial groove G. Then, a sixth insulating layer 246 is formed covering the second metal layer 232 and filling the initial groove G, and a contact hole is formed exposing the raised metal pieces. Finally, a fifth metal layer 235 is formed on the sixth insulating layer 246, the fifth metal layer 235 including a partition piece 26 connected to the raised metal pieces through the contact hole.

[0097] Referring to Fig. 6(C), a seventh insulating layer 247 is formed covering the fifth metal layer 235, the seventh insulating layer 247 provided with a through opening 2472 between the two raised metal pieces and overlapping the initial groove G, the through opening 2472 exposing the sixth insulating layer 246 in the initial groove G.

[0098] Referring to Fig. 6(D), a mask layer 5 is formed on the seventh insulating layer 247 by a photolithography process, the mask layer 5 used to protect the seventh insulating layer 247 and remove part of the sixth insulating layer 246 in the initial groove G, forming a groove 25 and a partition piece 26 in the middle region as shown. Figure 3 and Figure 4 In the process of removing part of the sixth insulating layer 246 in the initial groove G, part of the seventh insulating layer 247 around the through opening 2472 is removed.

[0099] It should be noted that, Figure 5 the method of forming the groove and the partition piece in the middle region is basically similar to that shown in Figs. 5(A) to 5(D), the difference mainly including that the groove 25 extends from the second metal layer 232 to a metal barrier 27 exposing the sixth metal layer 236. Figure 3 Figure 4

[0100] ​​The above descriptions of the embodiments are only used to help understand the technical solutions and the core ideas of the present application; it should be understood by those skilled in the art that the technical solutions recorded in the foregoing embodiments can still be modified, or some technical features can be replaced equivalently; and the modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A display panel, characterized by, The display panel has a display area, a hole area and an intermediate area between the display area and the hole area, and comprises: a substrate; a drive circuit layer on the substrate, an inner portion of the drive circuit layer being provided with a groove, the groove being located in the intermediate area and extending in the drive circuit layer towards the substrate, the drive circuit layer further comprising a partition member located in the intermediate area and comprising an extension portion extending from a side wall of the groove and extending towards the groove, the extension portion being suspended relative to a groove bottom of the groove; and a light emitting device layer on a side of the drive circuit layer away from the substrate and comprising one or more light emitting functional layers, at least one of the light emitting functional layers being disconnected by the extension portion; wherein, along an extension direction of the extension portion, the extension portion has a first size d1; along a direction of the partition member pointing to the substrate, the extension portion has a second size d2; and wherein d2 < d1.

2. The display panel of claim 1, wherein, d1 ≤ 3d2.

3. The display panel of claim 1 or 2, wherein, The first size d1 is 0.8 microns to 2.5 microns; and / or the second size d2 is 5000 angstroms to 9000 angstroms.

4. The display panel of claim 2, wherein, Two of the extension portions extend from one of the grooves towards each other, the two extension portions being spaced apart from each other, and a gap between the two extension portions has a third size d3, wherein d3 ≥ 2.5d1.

5. The display panel of claim 1, wherein, The extension portion comprises a bottom surface, a top surface and an end surface, the bottom surface being located on a side of the top surface close to the substrate, the end surface being located at an end of the extension portion away from a groove wall of the groove and connected between the top surface and the bottom surface, and an included angle between the end surface and the bottom surface is greater than or equal to 45 degrees and less than 90 degrees.

6. The display panel of claim 1, wherein, The drive circuit layer further comprises one or more metal barriers, one or more of the metal barriers being located in the intermediate area; at least one of the metal barriers is located at a groove bottom of the groove, and / or at least one of the metal barriers is located between the groove and the substrate.

7. The display panel of claim 6, wherein, The groove extends in the drive circuit layer to expose the metal barrier; and / or The drive circuit layer further comprises a transistor and a light shielding member, the light shielding member being located between at least one of the transistor and the substrate, and a thickness of the metal barrier is greater than or equal to a thickness of the light shielding member.

8. The display panel of claim 1, wherein, The drive circuit layer further comprises a transistor, the transistor being located between the substrate and the partition member and comprising a semiconductor layer, a gate and a source-drain electrode, the source-drain electrode being connected to the semiconductor layer, and the gate overlapping the semiconductor layer; The drive circuit layer further comprises a first metal layer and a second metal layer, the first metal layer and the second metal layer being located between the partition member and the substrate, the second metal layer being located between the partition member and the first metal layer, the second metal layer comprising the source-drain electrode, the first metal layer comprising the gate, and a groove bottom of the groove being located between the second metal layer and the first metal layer.

9. The display panel of claim 1, wherein, The driving circuit layer comprises a top metal layer, the top metal layer being the metal layer farthest from the substrate in the driving circuit layer, and the top metal layer comprises the partition member.

10. The display panel of claim 1, wherein, The angle between the side wall of the groove and the epitaxial part is greater than 90 degrees.

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