Method for controllable growth of gallium oxide film based on Mxene substrate
By using radio frequency magnetron sputtering to grow gallium oxide thin films on Mxene substrates, the defect problem in the growth of β-Ga2O3 thin films was solved, achieving high-quality large-size fabrication and low-cost production, and simplifying the process flow.
Patent Information
- Application Number
- CN202511140637.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-15
- Publication Date
- 2025-11-21
AI Technical Summary
Existing technologies are prone to defects such as twinning, cracking, and spiral growth when growing β-Ga2O3 films, making it difficult to achieve large-size fabrication. In addition, the equipment costs are high and the growth environment is complex.
Gallium oxide thin films were heteroepitaxially grown on the surface of Mxene substrates using radio frequency magnetron sputtering. Transition metal carbides, nitrides, or carbonitrides were selected as Mxene materials, and growth parameters such as temperature, pressure, atmosphere, and time were controlled to prepare gallium oxide thin films.
This method enables the fabrication of high-quality, large-size gallium oxide thin films, avoiding twinning and cracking defects, simplifying the growth process, reducing equipment costs, and improving crystal quality and reusability.
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Figure CN120989708A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The application relates to the technical field of semiconductor material preparation, in particular to a method for controllably growing a gallium oxide film based on an Mxene substrate. BACKGROUND
[0002] Gallium oxide (beta-Ga2O3) is a novel ultra-wide bandgap transparent semiconductor material, and the bandgap width is about 4.8 eV, which is much higher than 3.3-3.5 eV of silicon carbide and gallium nitride; in addition, the breakdown field strength of beta-Ga2O3 is 8 MV / cm, which is 2-3 times that of gallium nitride (3.3 MV / cm) and silicon carbide (2.5 MV / cm), and the extremely high breakdown field strength is an irreplaceable preferred material for preparing high-power devices. According to expert estimates, silicon carbide power devices can save 80% of energy compared with silicon devices, and beta-Ga2O3 power devices can save about 80% of energy compared with silicon carbide devices, so beta-Ga2O3 semiconductor devices have very broad application prospects in high-power, low-power devices. Therefore, beta-Ga2O3 material is suitable for manufacturing high-frequency, high-power, deep ultraviolet and high-density integrated semiconductor devices in the future.
[0003] Compared with SiC and GaN, the most prominent feature of beta-Ga2O3 is that large-size high-quality single crystals can be directly grown by high-temperature melt technology, and the crystal growth speed is fast, real-time observation can be realized, and the necking process can be used to reduce the defect density. In addition, the crystal does not need to use high-temperature and high-pressure growth environment, system integration and automatic control (including circuit, gas circuit, etc.) of complex crystal growth equipment, which helps to reduce the cost of equipment. At present, several melt growth technologies have successfully prepared beta-Ga2O3 single crystals, mainly including flame method, optical floating zone method, vertical Bridgman / vertical gradient freezing, mode method and chizochralsky method.
[0004] However, the above technologies have certain deficiencies in growing beta-Ga2O3 thin films in large areas or in practical applications at high temperatures. For example, the beta-Ga2O3 crystal structure grown by heteroepitaxy is a non-symmetrical monoclinic crystal system, which is prone to defects such as twinning, cracking and spiral growth, and it is difficult to realize large-size preparation, and breakthroughs in preparation technology are still needed. SUMMARY
[0005] The present scheme proposes a method for controllably growing a gallium oxide film based on an Mxene substrate to solve the problems and needs mentioned above. The technical features adopted can achieve the above technical purposes and bring other technical effects.
[0006] One object of the present application is to provide a method for controllable growth of gallium oxide film based on Mxene substrate, comprising the following steps: selecting Mxene as substrate; heating the substrate to a certain temperature, and performing sputter deposition in an inert atmosphere under a certain growth pressure to epitaxially grow gallium oxide film on the surface of the Mxene substrate.
[0007] In the technical scheme, the gallium oxide film is first hetero-epitaxially grown on the surface of the Mxene substrate by using the radio frequency magnetron sputtering method, and a structure with a single group of crystal faces is obtained; the gallium oxide is hetero-epitaxially grown by using the radio frequency magnetron sputtering technology, the preparation process is relatively simple, the growth quality of the film is good, and the method has a large-scale application prospect; the gallium oxide prepared by the method does not have defects such as twinning, cracking and spiral growth, and can be prepared in a large size; the Mxene substrate can be reused and peeled off easily. The method greatly helps the diffusion of ions and improves the crystal quality of the semiconductor single crystal film.
[0008] In addition, the method for controllable growth of gallium oxide film based on Mxene substrate according to the present applicationapplicationhave the following technical features:
[0009] In one example of the present application, the Mxene material is selected from transition metal carbide, nitride or carbonitride.
[0010] In one example of the present application, the substrate is heated to 700-750 DEG C.
[0011] In one example of the present application, the growth pressure is 0.8x10-1 Pa-2.5x10-1 Pa.
[0012] In one example of the present application, the sputtering power is 70-85 W.
[0013] In one example of the present application, in the sputter deposition, the inert gas with a flow rate of 15-30 sccm is continuously introduced.
[0014] In one example of the present application, the inert atmosphere is argon atmosphere or helium atmosphere.
[0015] In one example of the present application, the deposition time of the gallium oxide film is 30-45 h.
[0016] In one example of the present application, the thickness of the gallium oxide film is 400-1000 nm.
[0017] Another object of the present application is to provide a gallium oxide film prepared by the method described above.
[0018] The most preferred embodiments of the present application will be described in more detail below with reference to the accompanying drawings, so that the features and advantages of the present application can be easily understood. Attached Figure Description
[0019] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings of the embodiments of the present invention will be briefly described below. The drawings are merely illustrative of some embodiments of the present invention and are not intended to limit the scope of the present invention to all embodiments.
[0020] Figure 1 This is a schematic diagram of a gallium oxide structure grown on an Mxene substrate.
[0021] List of reference numerals in the attached diagram:
[0022] Mxene substrate 110;
[0023] Gallium oxide thin film 120. Detailed Implementation
[0024] To make the objectives, technical solutions, and advantages of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. The same reference numerals in the drawings represent the same components. It should be noted that the described embodiments are only some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the described embodiments of the present invention without creative effort are within the scope of protection of the present invention.
[0025] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by one of ordinary skill in the art to which this invention pertains. The terms “first,” “second,” and similar terms used in this patent application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, “an” or “a” and similar terms do not necessarily indicate a quantity limitation. Terms such as “comprising” or “including” mean that the element or object preceding the word encompasses the element or object listed following the word and its equivalents, without excluding other elements or objects. Terms such as “connected” or “linked” are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as “upper,” “lower,” “left,” and “right” are used only to indicate relative positional relationships; these relative positional relationships may change accordingly when the absolute position of the described object changes.
[0026] A method for controllable growth of a gallium oxide film based on an Mxene substrate according to a first aspect of the present application comprises the following steps: selecting an Mxene as a substrate; heating the substrate to a certain temperature, and performing radio frequency magnetron sputtering deposition in an inert atmosphere at a certain growth pressure to epitaxially grow a gallium oxide film on the surface of the Mxene substrate.
[0027] The present application first uses a radio frequency magnetron sputtering method to hetero-epitaxially grow a gallium oxide film on the surface of an Mxene substrate, and obtains a structure with a single group of crystal faces; the present application uses a radio frequency magnetron sputtering technology to hetero-epitaxially grow gallium oxide, and the preparation process is relatively simple, the growth quality of the film is relatively good, and the film has a large-scale application prospect; the gallium oxide prepared by the method of the present application does not have defects such as twinning, cracking and spiral growth, and can be prepared in a large size; the Mxene substrate can be reused and easily peeled off. The method greatly helps the diffusion of ions and improves the crystal quality of a semiconductor single crystal film.
[0028] In an example of the present application, the Mxene material is selected from a transition metal carbide, nitride or carbonitride.
[0029] In an example of the present application, the substrate is heated to 700-750 DEG C.
[0030] In an example of the present application, the growth pressure is 0.8x10-1 Pa-2.5x10-1 Pa.
[0031] In an example of the present application, the sputtering power is 70-85 W.
[0032] In an example of the present application, in the sputtering deposition, the inert gas with a flow rate of 15-30 sccm is continuously introduced.
[0033] In an example of the present application, the inert atmosphere is an argon atmosphere or a helium atmosphere.
[0034] In an example of the present application, the deposition time of the gallium oxide film is 30-45 h.
[0035] In an example of the present application, the thickness of the gallium oxide film is 400-1000 nm.
[0036] A gallium oxide film according to a second aspect of the present application is prepared by the method described above.
[0037] Example 1
[0038] A method for controllable growth of a gallium oxide film 120 based on an Mxene substrate according to the present application comprises the following steps: selecting an Mxene as a substrate; heating the substrate to 700 DEG C, and performing radio frequency magnetron sputtering deposition in an inert atmosphere at a growth pressure of 0.8x10-1 Pa-2.5x10-1 Pa to epitaxially grow a gallium oxide film on the surface of the Mxene substrate. -1The inert gas argon is continuously introduced at a flow rate of 15 sccm in a sputtering deposition process under a growth pressure of Pa, wherein the sputtering power is 70-85 W, the deposition time of the gallium oxide film 120 is 30 h, and the gallium oxide film 120 with a thickness of 400 nm is epitaxially grown on the surface of the Mxene substrate 110.
[0039] Example 2
[0040] According to the method for controllably growing the gallium oxide film 120 based on the Mxene substrate 110, the Mxene is selected as the substrate, the substrate is heated to 750 DEG C, and the inert gas argon is continuously introduced at a flow rate of 2.5 x 10 -1 The inert gas argon is continuously introduced at a flow rate of 30 sccm in a sputtering deposition process under a growth pressure of Pa, wherein the sputtering power is 85 W, the deposition time of the gallium oxide film 120 is 45 h, and the gallium oxide film 120 with a thickness of 900 nm is epitaxially grown on the surface of the Mxene substrate 110.
[0041] Example 3
[0042] According to the method for controllably growing the gallium oxide film 120 based on the Mxene substrate 110, the Mxene is selected as the substrate, the substrate is heated to 720 DEG C, and the inert gas argon is continuously introduced at a flow rate of 1.5 x 10 -1 The inert gas helium is continuously introduced at a flow rate of 20 sccm in a sputtering deposition process under a growth pressure of Pa, wherein the sputtering power is 85 W, the deposition time of the gallium oxide film 120 is 38 h, and the gallium oxide film 120 with a thickness of 600 nm is epitaxially grown on the surface of the Mxene substrate 110.
[0043] Example 4
[0044] According to the method for controllably growing the gallium oxide film 120 based on the Mxene substrate 110, the Mxene is selected as the substrate, the substrate is heated to 730 DEG C, and the inert gas argon is continuously introduced at a flow rate of 2. x 10 -1 The inert gas argon is continuously introduced at a flow rate of 28 sccm in a sputtering deposition process under a growth pressure of Pa, wherein the sputtering power is 82 W, the deposition time of the gallium oxide film 120 is 42 h, and the gallium oxide film 120 with a thickness of 800 nm is epitaxially grown on the surface of the Mxene substrate 110.
[0045] The application first adopts a radio frequency magnetron sputtering method to hetero-epitaxially grow a gallium oxide film 120 on a surface of a Mxene substrate, and obtains a structure with a single group of crystal faces; the application uses a radio frequency magnetron sputtering technology to hetero-epitaxially grow gallium oxide, and has a relatively simple preparation process, a good film growth quality, and a large-scale application prospect; the gallium oxide prepared by the method of the application does not have defects such as twinning, cracking and spiral growth, can be prepared in a large size, and can be repeatedly used and easily peeled off by using a Mxene substrate. The method greatly helps ion diffusion and improves the crystal quality of a semiconductor single crystal film.
[0046] The above describes the exemplary embodiment of the method for controllably growing a gallium oxide film based on a Mxene substrate 110 according to the application in detail with reference to a preferred embodiment, however, it can be understood by those skilled in the art that various modifications and changes can be made to the above specific embodiments without departing from the concept of the application, various technical features and structures according to the application can be combined, and the protection scope of the application is determined by the appended claims.
Claims
1. A method for controllable growth of gallium oxide film based on Mxene substrate, characterized in that, The method comprises the following steps: selecting Mxene as a substrate; heating the substrate to a certain temperature, and performing radio frequency magnetron sputtering deposition in an inert atmosphere at a certain growth pressure to epitaxially grow a gallium oxide film on the surface of the Mxene substrate.
2. The method for controllable growth of gallium oxide film on Mxene substrate according to claim 1, characterized in that: The Mxene material is selected from transition metal carbide, nitride or carbonitride.
3. The method for controllable growth of gallium oxide film on Mxene substrate according to claim 1, characterized in that: The substrate is heated to 700-750 DEG C.
4. The method for controllable growth of gallium oxide film on Mxene substrate according to claim 1, characterized in that: The growth pressure is 0.8 x 10 -1 Pa ~ 2.5 x 10 -1 Pa.
5. The method for controllable growth of gallium oxide film on Mxene substrate according to claim 1, characterized in that: The sputtering power is 70-85 W.
6. The method for controllable growth of gallium oxide thin film on Mxene substrate according to claim 1, characterized in that: In the sputtering deposition, an inert gas with a flow rate of 15-30 sccm is continuously introduced.
7. The method for controllable growth of gallium oxide thin film on Mxene substrate according to claim 1, characterized in that: The inert atmosphere is an argon atmosphere or a helium atmosphere.
8. The method for controllable growth of gallium oxide thin film on Mxene substrate according to claim 1, characterized in that: The deposition time of the gallium oxide film is 30-45 h.
9. The method for controllable growth of gallium oxide thin film on Mxene substrate according to claim 1, characterized in that: The radio frequency magnetron sputtering deposition is followed by an annealing treatment, and the parameters of the annealing treatment are as follows: vacuum environment, temperature of 750-800 DEG C, and time of 0.5-1 h.
10. A gallium oxide thin film, characterized by: The gallium oxide film is prepared by the method of any one of claims 1-9.