Particle wafer preparation equipment and method

Abstract

The invention belongs to the technical field of semiconductor defect detection, and discloses particle wafer preparation equipment and method. The particle wafer preparation equipment comprises a control device, a preparation device and a transmission device, wherein the preparation device is in communication connection with the control device, the preparation device is provided with an atomization mechanism and a carrying table, the carrying table is used for carrying a standard wafer, the atomization mechanism comprises an atomizer, a lifting assembly and a nozzle, and the nozzle is communicated with the atomizer, arranged on the lifting assembly and located above the carrying table; the control device can control the lifting assembly to drive the nozzle to move in the vertical direction, so that the distance between the nozzle and the carrying table can be adjusted, and the atomized particles are diffused and attached to the surface of the standard wafer. The transmission device is in communication connection with the control device, and the control device can control the transmission device to transmit the standard wafer to the carrying platform. The equipment can be used for preparing particles with different diameters on the same wafer.

Description

Technical Field

[0001] This invention relates to the field of semiconductor defect detection technology, and in particular to a particle wafer fabrication equipment and method. Background Technology

[0002] In the research and development and use of semiconductor defect detection equipment, standard particle wafers are frequently used. A wafer surface particle inspector is an instrument that uses optical methods to detect the particle size of a wafer surface. This instrument uses a laser to illuminate the wafer surface; when the light encounters particles, it scatters. By measuring the scattered light, the number and size of the particles are determined, thus measuring the particle size of the wafer surface. During initial installation and subsequent use, wafer surface particle inspectors require calibration using standard particle wafers to ensure accuracy in particle size testing. Current technologies mostly fabricate particles of a single size on a single wafer, which not only reduces calibration efficiency but also increases calibration costs.

[0003] Therefore, there is an urgent need for a wafer fabrication equipment and method to solve the above problems. Summary of the Invention

[0004] One object of the present invention is to provide a particle wafer fabrication apparatus that enables the fabrication of particles of different diameters on the same wafer.

[0005] To achieve this objective, the present invention adopts the following technical solution:

[0006] A particle wafer fabrication apparatus, comprising:

[0007] Control device;

[0008] The fabrication apparatus is communicatively connected to the control device. The fabrication apparatus has an atomizing mechanism and a stage. The stage is used to support a standard wafer. The atomizing mechanism includes an atomizer, a lifting assembly, and a nozzle. The nozzle is connected to the atomizer and is disposed on the lifting assembly. The nozzle is located above the stage. The control device can control the lifting assembly to drive the nozzle to move vertically, so as to adjust the distance between the nozzle and the stage, so that the atomized particles diffuse and adhere to the surface of the standard wafer.

[0009] The transmission device is communicatively connected to the control device, which is capable of controlling the transmission device to transfer the standard wafer to the stage.

[0010] Preferably, an aperture control disk is provided between the nozzle and the standard wafer, and the aperture control disk has only one through hole, through which the atomized particles can diffuse to the surface of the standard wafer.

[0011] Preferably, multiple aperture control disks are provided, and the diameter d of the through hole of each aperture control disk is different.

[0012] Preferably, the height of the aperture control disk from the standard wafer is H, the actual diameter of the atomized particles after diffusing to the wafer surface is D, the diffusion coefficient of the atomized particles is α, and D=d×α×H.

[0013] Preferably, the plurality of aperture control disks are disposed on a rotating mechanism, the rotating mechanism being communicatively connected to the control device, and the control device being able to control the rotating mechanism to drive the switching of the aperture control disks between the nozzle and the standard wafer.

[0014] Preferably, the preparation apparatus further includes a translation mechanism, the stage is disposed on the translation mechanism, the translation mechanism is communicatively connected to the control device, and the control device is able to control the translation mechanism to drive the stage to move.

[0015] Preferably, the fabrication apparatus further includes a temperature control mechanism disposed below the stage, which enables the standard wafer to maintain a preset temperature.

[0016] Preferably, the atomizing mechanism includes a filter assembly capable of filtering impurities in water and air to flush the water and air passages of the atomizing mechanism.

[0017] Preferably, the atomizing mechanism includes a solution preparer, which is communicatively connected to the control device, and the control device is capable of controlling the solution preparer to automatically prepare the particulate sample solution.

[0018] Another objective of this invention is to provide a method for preparing particulate wafers, which can improve preparation efficiency and ensure yield.

[0019] To achieve this objective, the present invention adopts the following technical solution:

[0020] A method for preparing particulate wafers, using the aforementioned particulate wafer preparation equipment, includes the following steps:

[0021] S100. Drive the transmission device through the control device to transfer the wafer to the stage, and drive the solution assembler through the control device to prepare the particulate sample solution. Filter water and impurities in the air through the filter assembly to rinse the water path and the air path.

[0022] S200, The atomizer atomizes the particulate sample solution to ensure that each atomized droplet contains only one particle, and sprays the atomized particles through the nozzle, and the atomized particles diffuse to the surface of the standard wafer through the through hole;

[0023] S300, the rotating mechanism switches the aperture control disk between the nozzle and the standard wafer, and drives the nozzle to rise and fall through the lifting assembly, so that atomized particles of different sizes can be attached to the surface of the same standard wafer, and can be conveyed to the wafer carrier through the transmission device to form the particle wafer.

[0024] The beneficial effects of this invention are:

[0025] This invention discloses a particle wafer fabrication apparatus. The particle wafer fabrication apparatus includes a control device, a fabrication device, and a transfer device. The fabrication device is communicatively connected to the control device and has an atomizing mechanism and a stage. The stage is used to hold a standard wafer. The atomizing mechanism includes an atomizer, a lifting assembly, and a nozzle. The nozzle is connected to the atomizer and is positioned above the stage on the lifting assembly. The control device can control the lifting assembly to drive the nozzle to move vertically, thereby adjusting the distance between the nozzle and the stage to allow the atomized particles to diffuse and adhere to the surface of the standard wafer. The transfer device is communicatively connected to the control device, and the control device can control the transfer device to transfer the standard wafer to the stage.

[0026] In this device, the distance at which atomized particles diffuse to the surface of a standard wafer can be adjusted by regulating the distance between the nozzle and the stage. Changing the diffusion distance can change the diameter of the atomized particles landing on the standard wafer, thereby achieving the purpose of attaching particles of different sizes to the same standard wafer, and thus enabling the preparation of multi-size particle wafers.

[0027] The present invention also discloses a method for preparing particulate wafers, which, based on the above-mentioned equipment, can improve preparation efficiency and ensure yield. Attached Figure Description

[0028] Figure 1 This is a logic diagram of the particulate wafer fabrication method provided by the present invention. Detailed Implementation

[0029] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, and not all of the structures.

[0030] In the description of this invention, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0031] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0032] In the description of this embodiment, the terms "upper," "lower," "left," and "right," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention. In addition, the terms "first" and "second" are used only for distinction in description and have no special meaning.

[0033] To enable the attachment of particles of multiple sizes onto a single wafer for the fabrication of multi-particle wafers, this embodiment provides a particle wafer fabrication apparatus. The apparatus includes a control device, a fabrication device, and a transfer device. The fabrication device is communicatively connected to the control device and includes an atomizing mechanism and a stage. The stage carries a standard wafer. The atomizing mechanism includes an atomizer, a lifting assembly, and a nozzle. The nozzle is connected to the atomizer and positioned above the stage on the lifting assembly. The control device controls the lifting assembly to drive the nozzle to move vertically, adjusting the distance between the nozzle and the stage to allow the atomized particles to diffuse and adhere to the surface of the standard wafer. The transfer device is communicatively connected to the control device, which controls the transfer device to transfer the standard wafer to the stage.

[0034] In this device, the distance at which atomized particles diffuse to the surface of a standard wafer can be adjusted by regulating the distance between the nozzle and the stage. Changing the diffusion distance can change the diameter of the atomized particles landing on the standard wafer, thereby achieving the purpose of attaching particles of different sizes to the same standard wafer, and thus enabling the preparation of multi-size particle wafers.

[0035] It should be noted that, assuming the diameter of the atomized particles is d1, the diameter of the atomized particles will increase as they descend due to gas diffusion. Assuming the diffusion height is H, and the actual diameter after diffusion and attachment to the standard wafer surface is D, then D = d1·α·H, where α is the diffusion coefficient. The larger H is, the larger the diameter D after diffusion. Therefore, the size of D can be changed by adjusting H and the diameter d1 of the atomized particles.

[0036] In this embodiment, an aperture control disk is also provided between the nozzle and the standard wafer. The aperture control disk has only one through-hole, allowing atomized particles to diffuse to the surface of the standard wafer. In this structure, only atomized particles passing through the through-hole can diffuse to the surface of the standard wafer. Therefore, the initial diameter of the atomized particles can be determined as the diameter of the through-hole. Furthermore, since the aperture control disk has only one through-hole, preparing particles in one area of ​​the standard wafer will not affect other areas, thus ensuring a high yield.

[0037] Furthermore, multiple aperture control disks are provided, and the diameter d of the through-holes on each aperture control disk is different. In this structure, the size of the through-holes can be changed and adjusted by switching the aperture control disks between the nozzle and the standard wafer, thereby indirectly adjusting the initial diameter d of the atomized particles according to the actual situation.

[0038] Therefore, in this embodiment, the height of the aperture control disk from the standard wafer is H, the actual diameter of the atomized particles after diffusion to the wafer surface is D, the diffusion coefficient of the atomized particles is α, and since the distance between the through holes on the aperture control disk is d, the initial diameter d of the atomized particles, the actual diameter D after diffusion to the wafer surface, the diffusion coefficient of the atomized particles, and the height H of the aperture control disk from the standard wafer satisfy the following relationship: D=d×α×H.

[0039] It should be noted that multiple aperture control disks are located on the rotating mechanism, which is communicatively connected to the control device. The control device can control the switching of aperture control disks between the rotating mechanism-driven nozzle and the standard wafer. This arrangement automatically controls the switching of aperture control disks, thereby improving automation, ensuring preparation efficiency, and reducing labor costs.

[0040] In addition, the fabrication apparatus includes a translation mechanism, with a stage mounted on it. The translation mechanism is communicatively connected to a control device, which can control the translation mechanism to move the stage. After particles are fabricated in a certain area of ​​the standard wafer surface, the translation mechanism can be controlled to change the stage position, allowing the atomized particles to diffuse to other parts of the standard wafer surface. Furthermore, the communication connection between the translation mechanism and the control device enables automatic movement, thereby improving automation, reducing labor costs, and also improving movement accuracy, ensuring a high yield rate.

[0041] The fabrication apparatus also includes a temperature control mechanism located below the stage. This mechanism maintains a preset temperature on the standard wafer. This design allows the temperature control mechanism to quickly transfer heat to the standard wafer, ensuring that the standard wafer remains at the preset temperature (higher than ambient temperature). This allows moisture in the atomized particles to evaporate rapidly, thereby accelerating the adsorption rate of particles onto the wafer and improving fabrication efficiency.

[0042] To ensure that the atomized particles are free of impurities, the atomization structure also includes a filter assembly. This assembly filters impurities from the water and air, which can then be used to flush the water and air paths of the atomization mechanism. Before atomizing the solution, the water is filtered to remove impurities from the water and air. Then, the water path is flushed with the filtered pure water, ensuring that the atomized particles are free of impurities and thus guaranteeing a high yield rate.

[0043] It should be noted that the filtration components in this embodiment include an ultrapure water filter and a CDA filter. The ultrapure water filter can filter water into pure water to flush the water path of the atomizing mechanism; the CDA filter can filter impurities in the air, and the resulting pure gas can flush the air path in the atomizing mechanism, thereby ensuring that there are no impurities during the atomization process and improving the yield.

[0044] Furthermore, the atomizing mechanism includes a solution preparer, which is communicatively connected to a control device. The control device can control the solution preparer to automatically prepare the particulate sample solution. This setup allows the control device to automatically select the particulate sample solution and calculate the dilution factor according to actual needs, thereby ensuring the accuracy of the solution concentration and improving the yield of standard wafers.

[0045] Downstream of the transport device is a wafer carrier. The transport device can transport standard wafers with atomized particles attached to their surface into the wafer carrier, so that granular wafers can be formed within the wafer carrier. This arrangement not only reduces labor costs but also allows granular wafers to be formed directly within the wafer carrier, providing excellent protection for the granular wafers.

[0046] Using the above-described equipment, this embodiment also provides a method for preparing particulate wafers, which specifically includes the following steps:

[0047] S100: Drive the transfer device through the control device to transfer the wafer to the stage, and drive the solution arbitrator through the control device to prepare the particle sample solution. Filter water and impurities in the air through the filter assembly to rinse the water and air paths.

[0048] S200, the atomizer atomizes the particulate sample solution to ensure that each atomized droplet contains only one particle, and sprays the atomized particles through the nozzle. The atomized particles diffuse to the surface of the standard wafer through the through hole.

[0049] S300, the rotating mechanism switches the aperture control disk between the nozzle and the standard wafer, and controls the lifting assembly to drive the nozzle to rise and fall, so that atomized particles of different sizes can be attached to the surface of the same standard wafer. The control transmission device can transfer them to the wafer carrier to form particle wafers.

[0050] In summary, the particle wafer fabrication apparatus in this embodiment is capable of fabricating particles of different diameters on the same wafer; based on this apparatus, the particle wafer fabrication method in this embodiment can further improve fabrication efficiency and ensure yield.

[0051] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art will be able to make various obvious changes, readjustments, and substitutions without departing from the scope of protection of the present invention. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. A particle wafer fabrication device, characterized in that, include: Control device; The fabrication apparatus is communicatively connected to the control device. The fabrication apparatus has an atomizing mechanism and a stage. The stage is used to support a standard wafer. The atomizing mechanism includes an atomizer, a lifting assembly, and a nozzle. The nozzle is connected to the atomizer and is disposed on the lifting assembly. The nozzle is located above the stage. The control device can control the lifting assembly to drive the nozzle to move vertically, so as to adjust the distance between the nozzle and the stage, so that the atomized particles diffuse and adhere to the surface of the standard wafer. The transmission device is communicatively connected to the control device, which is capable of controlling the transmission device to transfer the standard wafer to the stage.

2. The particle wafer fabrication equipment according to claim 1, characterized in that, An aperture control disk is provided between the nozzle and the standard wafer. The aperture control disk has only one through hole, through which the atomized particles can diffuse to the surface of the standard wafer.

3. The particle wafer fabrication equipment according to claim 2, characterized in that, The aperture control disk is provided in multiple ways, and the diameter d of the through hole of each aperture control disk is different.

4. The particle wafer fabrication equipment according to claim 3, characterized in that, The aperture control disk is at a height H above the standard wafer, the atomized particles have an actual diameter D after diffusing to the wafer surface, the diffusion coefficient of the atomized particles is α, and D = d × α × H.

5. The particle wafer fabrication equipment according to claim 3, characterized in that, The plurality of aperture control disks are disposed on the rotating mechanism, the rotating mechanism being communicatively connected to the control device, and the control device being able to control the rotating mechanism to switch the aperture control disks between the nozzle and the standard wafer.

6. The particle wafer fabrication equipment according to claim 5, characterized in that, The preparation apparatus further includes a translation mechanism, the stage is disposed on the translation mechanism, the translation mechanism is communicatively connected to the control device, and the control device is able to control the translation mechanism to drive the stage to move.

7. The particle wafer fabrication equipment according to claim 6, characterized in that, The fabrication apparatus also includes a temperature control mechanism located below the stage, which enables the standard wafer to maintain a preset temperature.

8. The particle wafer fabrication equipment according to claim 7, characterized in that, The atomizing mechanism includes a filter assembly that can filter impurities in water and air to flush the water and air passages of the atomizing mechanism.

9. The particle wafer fabrication equipment according to claim 8, characterized in that, The atomizing mechanism includes a solution preparer, which is communicatively connected to the control device. The control device can control the solution preparer to automatically prepare particulate sample solutions.

10. A method for preparing particulate wafers, using the particulate wafer preparation equipment as described in claim 9, characterized in that, The method for preparing particle wafers includes the following steps: S100. Drive the transmission device through the control device to transfer the wafer to the stage, and drive the solution assembler through the control device to prepare the particulate sample solution. Filter water and impurities in the air through the filter assembly to rinse the water path and the air path. S200, The atomizer atomizes the particulate sample solution to ensure that each atomized droplet contains only one particle, and sprays the atomized particles through the nozzle, and the atomized particles diffuse to the surface of the standard wafer through the through hole; S300, the rotating mechanism switches the aperture control disk between the nozzle and the standard wafer, and controls the lifting assembly to drive the nozzle to rise and fall, so that atomized particles of different sizes can be attached to the surface of the same standard wafer, and controls the transmission device to convey them to the wafer carrier to form the particle wafer.

Images