High-precision dry etching equipment for two-dimensional material and etching method thereof

Abstract

The invention discloses high-precision dry etching equipment for a two-dimensional material and an etching method of the high-precision dry etching equipment, and relates to the technical field of crossing of micro-nano processing equipment and a two-dimensional material process technology. The equipment comprises a sealed chamber, a substrate fixing module, a plasma generation module, a low-energy ion beam control module, a real-time in-situ monitoring module, a gas supply and tail gas treatment system and a control system, through the synergistic effect of a high-frequency magnetic field and a radio-frequency electric field, the problem of incomplete etching caused by interface damage of a two-dimensional material or insufficient density is avoided, uniform negative pressure is provided by vacuum adsorption through a porous ceramic plate, adjustable direct-current bias voltage is loaded by electrostatic adsorption through an independently-controlled interdigital electrode array, and the electrostatic adsorption efficiency is improved. By combining a fluororubber-carbon nanotube elastic buffer layer, substrate deformation caused by thermal expansion is effectively compensated, a Raman spectrum, a laser interferometer and a multi-mode in-situ monitoring module of an AFM probe are integrated, and multi-dimensional real-time sensing of the morphology, depth and damage state of an etching interface is achieved.

Description

Technical Field

[0001] This invention relates to the field of interdisciplinary technology of micro-nano fabrication equipment and two-dimensional material processing technology, and in particular to a high-precision dry etching equipment and etching method for two-dimensional materials. Background Technology

[0002] Two-dimensional materials are planar materials in which electrons can move freely only in two nanoscale dimensions, with a thickness of only one or a few atomic layers. These materials possess unique physical, chemical, electrical, and optical properties, showing great potential for applications in electronics, optoelectronics, energy storage, and catalysis. WSe2 is a two-dimensional transition metal chalcogenide composed of tungsten and selenium, exhibiting a layered structure and atomic-level thickness, displaying unique optical and electronic properties, and is suitable for optoelectronic devices, sensors, and high-frequency, high-speed electronic devices.

[0003] Dry etching achieves precise etching of two-dimensional materials by using a chemical vapor deposition (CVD) agent (such as oxygen plasma) to react with the material surface under vacuum or atmospheric conditions, generating volatile products. Compared to traditional wet etching, dry etching offers advantages such as eliminating the need for liquid solutions, high processing precision, and the ability to achieve anisotropic etching. It enables finer structural fabrication and avoids pollution, making it widely used in semiconductor device manufacturing, optoelectronic devices, and nanotechnology research.

[0004] Existing dry etching technologies for two-dimensional materials mostly rely on a single plasma source (such as CCP or ICP in traditional RIE), which makes it difficult to simultaneously achieve the chemical etching capability of high-density plasma and the low-damage characteristics of low-energy ion beams. Furthermore, traditional etching equipment often relies on mechanical clamping or simple vacuum adsorption to fix two-dimensional materials, which can easily lead to material wrinkling, shedding, or even interlayer slippage due to thermal expansion or mechanical stress. In addition, existing etching equipment usually judges the progress indirectly through a single parameter (such as etching time or current), making it difficult to achieve nanometer-level precision endpoint control and unable to detect material damage in real time. As a result, the yield and performance of etched two-dimensional material devices need to be improved. Therefore, this invention proposes a high-precision dry etching equipment and etching method for two-dimensional materials to solve the problems existing in the prior art. Summary of the Invention

[0005] To address the aforementioned problems, the present invention aims to provide a high-precision dry etching apparatus and etching method for two-dimensional materials, thereby solving the problems that existing dry etching technologies for two-dimensional materials cannot simultaneously achieve the chemical etching capabilities of high-density plasma and the low-damage characteristics of low-energy ion beams, are prone to material wrinkling, shedding, or even interlayer slippage due to thermal expansion or mechanical stress, and are difficult to achieve nanometer-level precision endpoint control.

[0006] To achieve the objectives of this invention, the invention is implemented through the following technical solution: a high-precision dry etching apparatus for two-dimensional materials, comprising:

[0007] A sealed chamber, the inner wall of which is provided with an anti-pollution lining layer, the anti-pollution lining layer being made of a low-absorption material;

[0008] A substrate fixing module is installed at the bottom of the sealed chamber and is used to support and fix a two-dimensional material substrate. The substrate fixing module includes a vacuum adsorption unit, an electrostatic adsorption unit and a temperature control unit.

[0009] The plasma generation module is located at the top of the sealed chamber and adopts a coaxial composite structure, consisting of an inductively coupled plasma source and a capacitively coupled plasma source.

[0010] A low-energy ion beam control module is disposed between the plasma generation module and the substrate fixing module, and consists of a radio frequency ion source, an energy modulation electrode group and a beam homogenization gate.

[0011] The real-time in-situ monitoring module is embedded in the inner wall of the sealed cavity and includes a Raman spectroscopy probe, a laser interferometer, and an atomic force microscope probe. The signal output terminals of the three are all connected to the control system.

[0012] A gas supply and exhaust gas treatment system, wherein the gas supply system consists of a multi-channel gas mixing chamber and a mass flow controller, and the exhaust gas treatment system consists of a catalytic reduction device and a vacuum pump group;

[0013] The control system is electrically connected to the plasma generation module, the low-energy ion beam control module, the substrate fixation module, and the real-time in-situ monitoring module. It has a built-in adaptive algorithm and dynamically adjusts the plasma power, ion beam energy, and substrate temperature.

[0014] Further improvements are made in that the vacuum adsorption unit and the electrostatic adsorption unit adopt a layered stacked design, with the porous ceramic plate of the vacuum adsorption unit located at the bottom layer and covered by an elastic buffer layer on top, and the interdigitated electrode array of the electrostatic adsorption unit embedded in the elastic buffer layer, and the substrate is fixed by the cooperation of negative pressure and electrostatic force.

[0015] Further improvements include: the micro-cooler integrated into the temperature control unit adopts a Peltier effect module, and the circulating coolant channel integrated into the temperature control unit is filled with a high-purity ethylene glycol aqueous solution.

[0016] A further improvement is that the inductively coupled plasma source and the capacitively coupled plasma source of the plasma generation module are coaxially arranged, the high-frequency magnetic field generated by the inductively coupled plasma source is used to excite the plasma, and the capacitively coupled plasma source applies a radio frequency bias voltage.

[0017] A further improvement is that the porous anodic aluminum oxide film of the beam homogenization gate has a pore size of 50-200 nm, a porosity of 30%-70%, and its surface is treated with plasma activation.

[0018] Further improvements include: the Raman spectroscopy probe of the real-time in-situ monitoring module adopts a confocal design to determine the degree of etching damage; the laser interferometer tracks the etching depth in real time; and the Raman spectroscopy probe and the laser interferometer are coaxially integrated.

[0019] A further improvement is that the multi-channel gas mixing chamber of the gas supply system includes several independent gas channels, which respectively transmit etching gas, inert gas, oxidizing gas and purging gas.

[0020] An etching method using a high-precision dry etching apparatus for two-dimensional materials includes the following steps:

[0021] Step 1: Transfer the two-dimensional material to the substrate fixing module and fix it through a combination of vacuum adsorption and electrostatic adsorption. Activate the temperature control unit to reduce the substrate temperature to the set value.

[0022] Step 2: Activate the plasma generation module, introduce Ar gas to excite low-density plasma, and utilize Ar... + Bombarding the surface of two-dimensional materials to remove adsorbed water, oxides, and contaminants;

[0023] Step 3: Input the target etching pattern and etching depth into the control system, and set the plasma power, ion beam energy and gas mixing ratio;

[0024] Step 4: Start the etching process. The real-time in-situ monitoring module simultaneously acquires Raman spectroscopy, laser interference, and AFM data, and feeds them back to the control system.

[0025] Step 5: When the laser interferometer detects the etching depth of the target two-dimensional material or the Raman spectrum shows the disappearance of the characteristic peaks of the two-dimensional material, the control system automatically terminates the etching.

[0026] Step 6: Turn off the plasma and gas supply, start the temperature control unit to heat the substrate to room temperature, remove residual reaction byproducts by purging the chamber with N2, and finally release the vacuum and take out the etched two-dimensional material.

[0027] Further improvements are made in that: the adaptive algorithm is based on a machine learning model, which is trained by historical etching data to predict the etching rate and damage degree of different two-dimensional materials under different etching conditions, thereby achieving dynamic optimization of etching parameters; and the joint monitoring of the laser interferometer and Raman spectroscopy can achieve nanoscale etching endpoint determination.

[0028] The beneficial effects of this invention are as follows: This invention adopts a coaxial composite structure of ICP and CCP. Through the synergistic effect of high-frequency magnetic field (ICP) and radio frequency electric field (CCP), the independent control of plasma density and ion energy is achieved. The ICP source provides high-density plasma to enhance chemical etching efficiency, while the CCP source precisely controls ion energy through radio frequency bias. This avoids the problems of two-dimensional material interface damage caused by excessive energy or incomplete etching caused by insufficient density in traditional single plasma sources. It fundamentally balances the requirements of etching rate and material protection, providing key support for the fine processing of ultrathin two-dimensional materials.

[0029] Furthermore, vacuum adsorption provides uniform negative pressure through a porous ceramic plate, while electrostatic adsorption applies an adjustable DC bias through an independently controlled interdigital electrode array. Combined with a fluororubber-carbon nanotube elastic buffer layer, this achieves synergistic fixation by negative pressure and electrostatic force, effectively compensating for substrate deformation caused by thermal expansion. Simultaneously, it integrates a Peltier effect micro-cooler and a circulating coolant channel, supporting precise temperature control over a wide temperature range from -196℃ to 200℃ (fluctuation ≤ ±0.5℃). This not only meets the low-temperature process requirements of flexible devices but also avoids thermal stress cracking caused by high temperatures. Compared to traditional fixation methods, this design significantly reduces the risk of physical damage to materials during the etching process.

[0030] In addition, a multi-modal in-situ monitoring module integrating Raman spectroscopy, laser interferometer, and AFM probe is used. Raman spectroscopy monitors the degree of material damage by shifting characteristic peaks, laser interferometer tracks etching depth with 0.1 nm precision, and AFM probe scans surface roughness simultaneously. The three are focused coaxially by a beam splitter prism, realizing multi-dimensional real-time perception of etching interface morphology, depth, and damage state. Combined with machine learning adaptive algorithms, plasma power, ion beam energy, and substrate temperature can be dynamically adjusted, avoiding the problem of uneven etching or over-etching caused by parameter lag in traditional processes, thereby significantly improving the yield and performance consistency of two-dimensional material devices. Attached Figure Description

[0031] Figure 1 This is a schematic diagram of the modular design framework of the high-precision dry etching equipment of the present invention. Detailed Implementation

[0032] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0033] Due to its excellent layered structure, tunable bandgap, high stability, and high mobility, WSe2 has been widely studied and used in transistors, photodetectors, and flexible electronic devices in recent years. However, the controllable growth of its high-quality single-crystal thin films has always been a key bottleneck restricting the improvement of device performance. This invention employs an improved vapor phase epitaxy (CVD) process, achieving the fabrication of large-area, highly uniform WSe2 single-crystal films through precise control of source material supply, temperature field distribution, atmosphere control, and substrate selection. This expands the practical application pathways of two-dimensional materials in nanoelectronics and integrated circuit manufacturing.

[0034] Example 1

[0035] according to Figure 1 As shown, this embodiment provides a high-precision dry etching apparatus for two-dimensional materials. The apparatus comprises a sealed chamber with a sealed door, a substrate fixing module installed at the bottom of the sealed chamber, a plasma generation module located at the top of the sealed chamber, a low-energy ion beam control module located between the plasma generation module and the substrate fixing module, a real-time in-situ monitoring module embedded in the inner wall of the sealed chamber, a gas supply and exhaust gas treatment system installed outside the sealed chamber, and a control system.

[0036] The inner wall of the sealed chamber is provided with an anti-pollution lining layer, which is made of a low-adsorption material. In this embodiment, the low-adsorption material is an ultra-high vacuum fluoropolymer (meeting ASTM D543-14 standard, 500h halogen corrosion weight loss rate ≤0.1%, thickness 250μm).

[0037] The substrate fixing module is used to support and fix the two-dimensional material substrate, including a vacuum adsorption unit, an electrostatic adsorption unit, and a temperature control unit. The vacuum adsorption unit provides a uniform negative pressure (≤-80kPa) through a porous ceramic plate (pore diameter 10μm, porosity 40%). The electrostatic adsorption unit includes an independently controllable interdigitated electrode array (electrode width 20μm, spacing 50μm) and is loaded with a DC bias voltage of 0~500V. The temperature control unit integrates a micro-cooler and a circulating coolant channel to achieve precise adjustment of the temperature of the two-dimensional material substrate in the range of -196℃ to 200℃.

[0038] The plasma generation module employs a coaxial composite structure consisting of an inductively coupled plasma source (ICP) and a capacitively coupled plasma source (CCP). The inductively coupled plasma source comprises a multi-layered spiral coil (100 mm in diameter) operating at a frequency of 13.56 MHz, while the capacitively coupled plasma source consists of a ring electrode plate (with a diameter matching the ICP coil), applying a 13.56 MHz radio frequency bias. Together, they generate high-density, low-electron-temperature plasma (coordinated plasma density 10). 13 cm -3Plasma with an electron temperature ≤ 3 eV;

[0039] The low-energy ion beam control module consists of a radio frequency ion source (frequency 2-60MHz), an energy modulation electrode group (containing a metal grid with 4 adjustable potentials (grid spacing 2mm)) and a beam homogenization grid. It is activated by Ar / O2 plasma (activation time ≥30min). The radio frequency ion source is a radio frequency (RF) ion source. The energy modulation electrode group contains a metal grid with multiple adjustable potentials. The beam homogenization grid is made of a porous anodic aluminum oxide film. It is used to disperse and confine the ion energy in the plasma to the range of 5-50eV to achieve uniform bombardment of the low-energy ion beam.

[0040] The real-time in-situ monitoring module includes a Raman spectroscopy probe, a laser interferometer, and an atomic force microscope (AFM) probe. The Raman spectroscopy probe is used to monitor the changes in the lattice vibration peak positions of two-dimensional materials, the laser interferometer is used to track the real-time morphology of the etched interface, and the AFM probe is used to scan the surface roughness in situ. The signal output terminals of all three are connected to the control system.

[0041] The gas supply system includes a multi-channel gas mixing chamber and a mass flow controller (MFC), which can precisely control the mixing ratio and flow rate of etching gases (such as Cl2, HBr, Ar and O2). The mixing chamber of the gas supply system is connected to the inlet of the sealed chamber through a pipeline, and delivers the prepared etching gases (such as Cl2, HBr, Ar and O2) into the sealed chamber.

[0042] The exhaust gas treatment system includes a catalytic reduction device and a vacuum pump set, which are used to decompose residual halogen gases and maintain the vacuum level of the chamber. The vacuum pump set is connected to the exhaust port of the sealed chamber and is used to draw a vacuum and maintain the pressure of the sealed chamber. The catalytic reduction device is integrated with the exhaust path through a pipeline to decompose the residual halogen gases (such as Cl2 and Br2) after etching in real time, so as to avoid polluting the environment or corroding the equipment.

[0043] The control system is electrically connected to the plasma generation module, the low-energy ion beam control module, the substrate fixation module, and the real-time in-situ monitoring module. It has a built-in adaptive algorithm that can dynamically adjust the plasma power, ion beam energy, and substrate temperature based on the etching rate, interface morphology, and material damage signals fed back by the real-time in-situ monitoring module.

[0044] In this embodiment, the vacuum adsorption unit and electrostatic adsorption unit of the substrate fixing module adopt a layered stacked design. The porous ceramic plate of the vacuum adsorption unit is located at the bottom layer, covered by an elastic buffer layer (200 μm thick, 8 wt% carbon nanotube content). The interdigital electrode array of the electrostatic adsorption unit is embedded in the elastic buffer layer. The substrate is fixed by the synergistic effect of negative pressure and electrostatic force, avoiding wrinkling or detachment of the two-dimensional material caused by mechanical stress. The interdigital electrode array of the electrostatic adsorption unit adopts a regional independent control mode. An adjustable DC bias voltage of 0-500V is applied between adjacent electrodes. The substrate deformation caused by thermal expansion is compensated by the electrostatic potential gradient (compensation accuracy ≤ 0.1 μm / cm). 2 ).

[0045] In this embodiment, the micro-cooler adopts a Peltier effect module with a maximum cooling power of 50W and a minimum temperature of -196℃ (liquid nitrogen cooling mode).

[0046] The circulating coolant channel is filled with a high-purity ethylene glycol aqueous solution (conductivity ≤1μS / cm). The substrate temperature fluctuation is maintained at ≤±0.5℃ through a PID control algorithm to avoid interlayer slippage or cracking of the two-dimensional material caused by thermal stress.

[0047] In this embodiment, the high-frequency magnetic field (13.56MHz) generated by the ICP coil is used to excite the plasma, and a radio frequency bias voltage (13.56MHz) is applied to the CCP electrode plate. Through the synergistic effect of the magnetic field and the electric field, the plasma density (10) is achieved. 13 cm -3 Independent regulation of ion energy (5–50 eV).

[0048] In this embodiment, the porous anodic aluminum oxide film on the beam homogenization gate has a pore size of 100 nm and a porosity of 50%. Its surface is treated with plasma to reduce scattering of the ion beam during transmission and ensure uniform distribution of the ion beam on the surface of the two-dimensional material (in-wafer uniformity deviation <5%).

[0049] In this embodiment, the Raman spectroscopy probe employs a confocal design, with an excitation wavelength of 532 nm or 633 nm, achieving a resolution of 0.5 cm⁻¹. -1 E can identify two-dimensional materials (such as WSe2) 2 The characteristic peak positions of g and A1g are shifted (shift amount ≤ 0.1cm). -1 ) and half-width at half-height (FWHM) variation (≤2cm) -1 (This is used to determine the degree of etching damage;)

[0050] The laser interferometer has a wavelength of 1550nm and an accuracy of 0.1nm, and can track the etching depth in real time (resolution ≤1nm). The Raman spectroscopy probe is coaxially integrated with the optical path of the laser interferometer, and synchronous focusing on the same monitoring point is achieved through a beam splitter prism (positioning error ≤1μm).

[0051] In this embodiment, the multi-channel gas mixing chamber includes six independent gas channels (with built-in 3D printed titanium alloy vortex generators) for transmitting etching gas (Cl2, HBr), inert gas (Ar), oxidizing gas (O2), and purging gas (N2), respectively. The mass flow controller accuracy of each channel is ±0.1 sccm, and the uniformity deviation of the mixed gas is <±2%.

[0052] Example 2

[0053] This embodiment provides an etching method for a high-precision dry etching apparatus for two-dimensional materials, including the following steps:

[0054] Step 1: Substrate Pretreatment

[0055] Two-dimensional material (WSe2 is used as an example in this embodiment) is transferred to the substrate fixing module and fixed by vacuum adsorption and electrostatic adsorption. The temperature control unit is activated to reduce the substrate temperature to -50°C.

[0056] Step 2: Plasma pre-excitation

[0057] The plasma generation module is activated, and Ar gas is introduced (flow rate 2 sccm) to excite low-density plasma (density < 10). 13 cm -3 ), using Ar + Bombarding the surface of two-dimensional materials to remove adsorbed water, oxides, and contaminants;

[0058] Step 3: Etching Parameter Setting

[0059] The target etching pattern (line width, channel length) and etching depth (single layer or multiple layers) are input into the control system, and the plasma power (100W), ion beam energy (25eV) and gas mixing ratio (such as Cl2:HBr:Ar=3:2:5) are set.

[0060] Step 4: Real-time erosion and monitoring

[0061] The etching process is initiated, and the real-time in-situ monitoring module simultaneously acquires Raman spectroscopy, laser interference, and AFM data, which are then fed back to the control system.

[0062] If an etching rate deviation from the set value (deviation > ±10%) or a damage signal (E2g peak position shift > 0.1 cm) is detected... -1If the plasma power or ion beam energy is adjusted by an adaptive algorithm, the adaptive algorithm is based on a machine learning model (neural network) and is trained by historical etching data. It can predict the etching rate and damage degree of two-dimensional materials under different etching conditions, and realize the dynamic optimization of etching parameters.

[0063] Step 5: Determining the Etching End Point

[0064] When the laser interferometer detects the target etching depth or the Raman spectrum shows the disappearance of the characteristic peaks of the two-dimensional material (complete etching to the substrate interface), the control system automatically terminates the etching. The joint monitoring of the laser interferometer and Raman spectrum can realize the determination of the etching endpoint at the nanometer level (resolution ≤ 5nm), avoiding over-etching or under-etching.

[0065] Step Six: Post-processing

[0066] The plasma and gas supply are turned off, the temperature control unit is activated to heat the substrate to room temperature of 25°C, the residual reaction byproducts are removed by blowing the chamber with N2, and finally the vacuum is released and the etched two-dimensional material is taken out, thus completing the high-precision dry etching of the two-dimensional material.

[0067] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A high-precision dry etching apparatus for two-dimensional materials, characterized in that, include: A sealed chamber, the inner wall of which is provided with an anti-pollution lining layer, the anti-pollution lining layer being made of a low-absorption material; A substrate fixing module is installed at the bottom of the sealed chamber and is used to support and fix a two-dimensional material substrate. The substrate fixing module includes a vacuum adsorption unit, an electrostatic adsorption unit and a temperature control unit. The plasma generation module is located at the top of the sealed chamber and adopts a coaxial composite structure, consisting of an inductively coupled plasma source and a capacitively coupled plasma source. A low-energy ion beam control module is disposed between the plasma generation module and the substrate fixing module, and consists of a radio frequency ion source, an energy modulation electrode group and a beam homogenization gate. The real-time in-situ monitoring module is embedded in the inner wall of the sealed cavity and includes a Raman spectroscopy probe, a laser interferometer, and an atomic force microscope probe. The signal output terminals of the three are all connected to the control system. A gas supply and exhaust gas treatment system, wherein the gas supply system consists of a multi-channel gas mixing chamber and a mass flow controller, and the exhaust gas treatment system consists of a catalytic reduction device and a vacuum pump group; The control system is electrically connected to the plasma generation module, the low-energy ion beam control module, the substrate fixation module, and the real-time in-situ monitoring module. It has a built-in adaptive algorithm and dynamically adjusts the plasma power, ion beam energy, and substrate temperature.

2. The high-precision dry etching equipment for two-dimensional materials according to claim 1, characterized in that: The vacuum adsorption unit and the electrostatic adsorption unit are designed in a layered stack. The porous ceramic plate of the vacuum adsorption unit is located at the bottom layer and covered with an elastic buffer layer. The interdigitated electrode array of the electrostatic adsorption unit is embedded in the elastic buffer layer, and the substrate is fixed by the cooperation of negative pressure and electrostatic force.

3. The high-precision dry etching equipment for two-dimensional materials according to claim 1, characterized in that: The temperature control unit has a built-in micro-cooler that uses a Peltier effect module, and the circulating coolant channel of the temperature control unit is filled with a high-purity ethylene glycol aqueous solution.

4. The high-precision dry etching equipment for two-dimensional materials according to claim 1, characterized in that: The plasma generation module has an inductively coupled plasma source and a capacitively coupled plasma source arranged coaxially. The high-frequency magnetic field generated by the inductively coupled plasma source is used to excite the plasma, and the capacitively coupled plasma source applies a radio frequency bias voltage.

5. The high-precision dry etching equipment for two-dimensional materials according to claim 1, characterized in that: The porous anodic aluminum oxide film of the beam homogenization gate has a pore size of 50-200 nm and a porosity of 30%-70%, and its surface is treated with plasma activation.

6. The high-precision dry etching equipment for two-dimensional materials according to claim 1, characterized in that: The Raman spectroscopy probe of the real-time in-situ monitoring module adopts a confocal design to determine the degree of etching damage. The laser interferometer tracks the etching depth in real time. The Raman spectroscopy probe and the laser interferometer are coaxially integrated.

7. A high-precision dry etching apparatus for two-dimensional materials according to claim 1, characterized in that: The multi-channel gas mixing chamber of the gas supply system contains several independent gas channels, which respectively transmit etching gas, inert gas, oxidizing gas and purging gas.

8. An etching method applied to a high-precision dry etching apparatus for two-dimensional materials as described in any one of claims 1-7, characterized in that, Includes the following steps: Step 1: Transfer the two-dimensional material to the substrate fixing module and fix it through a combination of vacuum adsorption and electrostatic adsorption. Activate the temperature control unit to reduce the substrate temperature to the set value. Step 2: Activate the plasma generation module, introduce Ar gas to excite low-density plasma, and utilize Ar... + Bombarding the surface of two-dimensional materials to remove adsorbed water, oxides, and contaminants; Step 3: Input the target etching pattern and etching depth into the control system, and set the plasma power, ion beam energy and gas mixing ratio; Step 4: Start the etching process. The real-time in-situ monitoring module simultaneously acquires Raman spectroscopy, laser interference, and AFM data, and feeds them back to the control system. Step 5: When the laser interferometer detects the etching depth of the target two-dimensional material or the Raman spectrum shows the disappearance of the characteristic peaks of the two-dimensional material, the control system automatically terminates the etching. Step 6: Turn off the plasma and gas supply, start the temperature control unit to heat the substrate to room temperature, remove residual reaction byproducts by purging the chamber with N2, and finally release the vacuum and take out the etched two-dimensional material.

9. The etching method for a high-precision dry etching apparatus for two-dimensional materials according to claim 8, characterized in that: The adaptive algorithm is based on a machine learning model and is trained using historical etching data to predict the etching rate and damage degree of different two-dimensional materials under different etching conditions, thereby achieving dynamic optimization of etching parameters. The combined monitoring of the laser interferometer and Raman spectroscopy can achieve nanoscale etching endpoint determination.

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