Substrate bonding apparatus

Abstract

The substrate bonding apparatus according to the present disclosure includes: a first chuck having a diameter larger than a diameter of a first substrate; a deformation plate configured to support the first substrate and configured to have a variable shape on the first chuck; and a deformation unit between the first chuck and the deformation plate, where the deformation unit includes a main support that is deformable to press the deformation plate, the main support having a closed curve shape with a center penetrating.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0065118, filed on May 20, 2024, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] This disclosure relates to a substrate bonding apparatus. Background Technology

[0004] In related technologies, the main focus of semiconductor technology is on improving integration density. However, as the integration density of semiconductor devices reaches its limits, 3D packaging technology, which three-dimensionally stacks semiconductor devices, has begun to attract attention. When using a vertical stacking method, more devices can be implemented on the same silicon area, thus offering advantages such as reduced manufacturing costs and improved performance.

[0005] Several methods exist for generating 3D ICs, with "chip-to-chip (C2C) bonding," "wafer-to-wafer (W2W) bonding," and "chip-to-wafer (C2W) bonding" being representative examples. C2C and C2W involve cutting the ICs into chip units and bonding them together or bonding the cut chips to a substrate (wafer), but they suffer from drawbacks such as long processing times and increased manufacturing costs.

[0006] W2W refers to a process that aligns two or more substrates and then brings them into contact with and joins them together. W2W is a method of bonding substrates together and cutting them into chip cells in one go, and it has the advantages of short manufacturing time and high productivity.

[0007] However, when using wafer-to-wafer bonding, bubbles may form between the two substrates when they are bonded in a flat state. These bubbles can cause short circuits in the chip, leading to problems such as reduced chip yield or inability to proceed with subsequent processes.

[0008] To solve the above problem, the following method is used: the lower substrate of the two hydrophilically treated substrates is set to a convex hemispherical shape, and then the upper substrate is first joined to the lower substrate by point contact, and then the substrates are joined towards the edge of the substrate.

[0009] In this bonding method, during the process of deforming the substrate into a convex hemispherical shape, insufficient or excessive expansion may occur near the edge regions compared to the central portion, leading to problems such as decreased chip yield. Therefore, efforts are needed to improve this issue. Summary of the Invention

[0010] The purpose of this disclosure is to provide a substrate bonding apparatus that can improve chip yield.

[0011] However, this disclosure is not limited thereto. The above and other aspects of this disclosure will become more apparent to those skilled in the art upon reference to the detailed description given below.

[0012] One aspect of the substrate bonding apparatus disclosed herein includes: a first chuck having a diameter larger than that of a first substrate; a deformable plate configured to support the first substrate and configured to have a variable shape on the first chuck; and a deformable unit between the first chuck and the deformable plate, wherein the deformable unit includes a main support member deformable to compress the deformable plate, the main support member having a closed curve shape with a central penetration.

[0013] One aspect of the substrate bonding apparatus disclosed herein includes: a lower module; and an upper module provided with a second chuck, the second chuck supporting a second substrate opposite to a first substrate.

[0014] Another aspect of the substrate bonding apparatus disclosed herein includes: a lower module including a first chuck having a diameter larger than that of a first substrate; and an upper module including a second chuck configured to support a second substrate opposite to the first substrate, wherein the lower module includes: a deformable plate configured to support the first substrate, the deformable plate being above the first chuck and configured to have a variable shape, the thickness of an edge region of the deformable plate being thinner than the thickness of a central portion or intermediate region of the deformable plate, and the lower surface of the edge region including an inclined surface inclined upward relative to a horizontal plane; a deformation unit between the first chuck and the deformable plate; a clamping unit configured to constrain the deformable plate to prevent the deformable plate from detaching from the first chuck; a cylindrical first rib at the central portion of the deformation unit and having an open top; and a first sensor at the central portion of the deformation unit and The first rib; and the first target, at the central portion on the lower surface of the deformable plate and defining the sensing surface of the first sensor, wherein the deformable unit includes: a main support having an annular shape and an expandable volume in response to fluid supplied from a first fluid regulator squeezing the deformable plate; and an auxiliary support unit located outside the main support, the auxiliary support unit having a variable volume due to the inflow and outflow of fluid supplied from a compressor, the compressor squeezing the deformable plate in an upward direction by providing positive pressure, or the compressor pulling the deformable plate in a downward direction by providing negative pressure via a vacuum pump, wherein the clamping unit includes: a first ring below the first chuck; a second ring above the deformable plate; and a bolt coupled to the first ring and the second ring, and penetrating the deformable plate and the first chuck, but not bolted to the deformable plate and the first chuck.

[0015] Specific features or aspects of other embodiments are included in the detailed description and accompanying drawings.

[0016] The substrate bonding apparatus according to this disclosure can improve precision limits and precisely adjust alignment accuracy to improve chip yield. Attached Figure Description

[0017] The above and other aspects and features of this disclosure will become apparent from the accompanying drawings, which illustrate exemplary embodiments of the present disclosure in detail.

[0018] Figure 1 This is a plan view illustrating a substrate processing system according to some embodiments of the present disclosure;

[0019] Figure 2 This is a front view illustrating a substrate bonding apparatus according to some embodiments of the present disclosure;

[0020] Figure 3 It shows Figure 2 The graph of region A;

[0021] Figure 4 It shows Figure 3 The graph of region B;

[0022] Figure 5 This is a diagram showing the state in which the push rod of the substrate bonding apparatus according to some embodiments of the present disclosure is moved downward;

[0023] Figure 6 This is a diagram illustrating the process of attaching a second substrate to a first substrate in a substrate bonding apparatus according to some embodiments of the present disclosure;

[0024] Figure 7 This is a diagram illustrating the state of bonding of a first substrate and a second substrate in a substrate bonding apparatus according to some embodiments of the present disclosure;

[0025] Figure 8 This is a diagram illustrating the state of the lifting pin protruding in a substrate bonding apparatus according to some embodiments of the present disclosure;

[0026] Figure 9 This is a diagram illustrating the lower modules according to some embodiments of the present disclosure;

[0027] Figure 10 This is a front view of the lower module according to some embodiments of the present disclosure;

[0028] Figure 11 It shows Figure 10 The graph of region C;

[0029] Figure 12 It shows Figure 10 The graph of region D;

[0030] Figure 13 It shows Figure 12 A diagram showing the state of the second dome contraction;

[0031] Figure 14 It is a diagram showing the ratio of the first substrate to the second substrate in a flat state;

[0032] Figure 15 It is a plan view showing the state in which the first substrate becomes convex due to the deformation plate;

[0033] Figure 16 It shows along Figure 15 A diagram of the cross section intercepted by line I-I';

[0034] Figure 17This is a diagram illustrating a first substrate whose scaling compensation amount is adjusted by a first dome of a substrate bonding device according to some embodiments of the present disclosure.

[0035] Figure 18 This is a diagram illustrating the first substrate whose scaling compensation amount is adjusted by the second dome of the substrate bonding device according to some embodiments of the present disclosure.

[0036] Figure 19 This is a plan view of the lower module according to some embodiments of the present disclosure;

[0037] Figure 20 This is a plan view of the lower module according to some embodiments of the present disclosure;

[0038] Figure 21 This is a plan view of the lower module according to some embodiments of the present disclosure;

[0039] Figure 22 This is a plan view of the lower module according to some embodiments of the present disclosure;

[0040] Figure 23 This is a plan view of the lower module according to some embodiments of the present disclosure;

[0041] Figure 24 This is a plan view of the lower module according to some embodiments of the present disclosure;

[0042] Figure 25 This is a plan view of the lower module according to some embodiments of the present disclosure;

[0043] Figure 26 This is a plan view of the upper module according to some embodiments of the present disclosure;

[0044] Figure 27 It shows the relationship with Figure 26 A diagram of the second substrate corresponding to the cut surface II-II'; and

[0045] Figure 28 This is a diagram illustrating the lower module according to some embodiments of the present disclosure. Detailed Implementation

[0046] In the following description, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The advantages and features of the present disclosure, as well as methods for achieving these advantages and features, will become apparent from the embodiments described in detail below in conjunction with the accompanying drawings. However, the present disclosure is not limited to the embodiments described below and may be embodied in various different forms. These embodiments are provided only to make the present disclosure clear and implementable, and to fully inform those skilled in the art of the category of the disclosure, which is defined only by the claims. Throughout this specification, the same reference numerals refer to the same components.

[0047] The terminology used in this specification is for illustrative purposes and is not intended to limit this disclosure. In this specification, the singular form includes the plural form unless specifically stated in the context. For terms such as “comprising” and / or “including” as used in this specification, the referenced components, steps, operations, and / or elements do not exclude the presence or addition of one or more other components, steps, operations, and / or elements.

[0048] Figure 1 This is a plan view illustrating a substrate processing system according to some embodiments of the present disclosure.

[0049] refer to Figure 1 According to some embodiments of the present disclosure, the substrate processing system 1 may consist of a chamber having an internal space and may include an indexing module 10 and a processing module 20.

[0050] Substrates W1 and W2 are provided to index module 10 from the outside (see...). Figure 2 The index module 10 can transfer substrates W1 and W2 to the process module 20. The index module 10 can be a device front-end module equipped with a loading port.

[0051] Container P1, containing substrates W1 and W2, can be placed on the loading port. A front-opening wafer transfer box (FOUP) can be used as container P1. Container P1 can be carried from the outside into the loading port by an overhead conveyor (OHT) and can be carried out from the loading port to the outside.

[0052] The first transfer module 31 can be disposed between the indexing module 10 and the processing module 20. The first transfer module 31 can transfer substrates W1 and W2 between the container P1 placed on the loading port and the process module 20. The first transfer module 31 may include an indexing robot that moves on an indexing track.

[0053] Processing module 20 may include multiple processing chambers 21, 23, and 25. Second transfer module 35 may be disposed among the multiple processing chambers 21, 23, and 25. The transfer robot of second transfer module 35 can transfer substrates W1 and W2 to a predetermined processing chamber 21, 23, or 25 among the multiple processing chambers 21, 23, and 25. As an example, substrates W1 and W2 can be transferred from any one of the multiple processing chambers 21, 23, and 25 (e.g., 23) to another processing chamber (e.g., 25).

[0054] Multiple processing chambers 21, 23, and 25 can be arranged in a row, stacked vertically, or combined in various ways. For example... Figure 1 As shown, some processing chambers 23, different from some processing chambers 21 and 25, can be arranged on both sides of the second transmission module 35. The placement of the multiple processing chambers 21, 23, and 25 is not limited to the foregoing example and can be changed to take into account the footprint and processing efficiency of the substrate processing system 1.

[0055] The multiple processing chambers 21, 23, and 25 may include a plasma processing device 21, a cleaning device 23, and a substrate bonding device 25.

[0056] The plasma processing apparatus 21 can perform plasma processing on at least one surface of the two substrates W1 and W2. That is, the plasma processing apparatus 21 can be configured to make at least one of the bonding surfaces of the first substrate W1 and the second substrate W2 hydrophilic by plasma processing.

[0057] The plasma processing apparatus 21 can irradiate plasma onto the surfaces of substrates W1 and W2 disposed in an inductively coupled plasma (ICP) chamber to form dangling bonds (or mixed bonds) on the surfaces of substrates W1 and W2. However, the plasma generated by the plasma processing apparatus 21 is not limited to inductively coupled plasma, and can be, for example, capacitively coupled plasma, microwave plasma, etc.

[0058] The cleaning apparatus 23 can clean the surfaces of substrates W1 and W2 that have undergone plasma treatment by the plasma treatment apparatus 21. The cleaning apparatus 23 can use a spin coater to coat the surfaces of substrates W1 and W2 with deionized water (DIW). DIW not only cleans the surfaces of substrates W1 and W2, but also allows hydroxyl (-OH) groups to bond well to the surfaces of substrates W1 and W2, thereby making it easier to form dangling bonds on the surfaces of substrates W1 and W2.

[0059] The substrate bonding apparatus 25 can perform bonding in a wafer-to-wafer manner by directly bonding two substrates W1 and W2 that have undergone plasma treatment in the plasma processing apparatus 21 and cleaning in the cleaning apparatus 23, without the need for a separate medium. That is, the substrate bonding apparatus 25 can bond two substrates W1 and W2 without using bonding media such as adhesive films or solder bumps.

[0060] The substrate bonding apparatus 25 may include a plurality of chucks (first chuck 110 and second chuck 210) supporting two substrates W1 and W2, and components (e.g. top pusher 220) for pressing the substrates W1 and W2 to perform a wafer-to-wafer method.

[0061] The substrate bonding device 25 will now be described with reference to the accompanying drawings.

[0062] Figure 2 This is a diagram illustrating a substrate bonding apparatus according to some embodiments of the present disclosure.

[0063] refer to Figure 2 The substrate bonding device 25 may include a main body 25P, a worktable 25M, a gantry 25G, a vision unit 25V, a lower module 100, and an upper module 200.

[0064] The main body 25P can support the worktable 25M and the gantry 25G. In some embodiments, the main body 25P may be equipped with a pneumatic system, and the worktable 25M may be operated by pneumatic pressure.

[0065] The worktable 25M can be positioned above the main body 25P and can be equipped with, for example, a multi-axis motor to achieve six degrees of freedom of movement. With this worktable 25M, the height, position, and placement of the lower module 100 can be adjusted based on the upper module 200.

[0066] The gantry 25G is positioned above the main body 25P and can support the vision unit 25V and the upper module 200. As an example, the gantry 25G can be configured to be open in the transport direction of substrates W1 and W2, so that substrates W1 and W2 can be introduced by the transport robot of the second transport module 35.

[0067] The vision unit 25V is a device for detecting substrates W1 and W2, and, as an example, can be configured as a camera. Although shown in the accompanying drawings, substrates W1 and W2 may be marked, and the vision unit 25V is used to photograph these marks and / or chips to detect / master the shape, size, and / or scaling compensation amount of the chips / patterns on substrates W1 and W2.

[0068] The lower module 100 and the upper module 200 are configured to be opposite or facing each other at the top and bottom, and a covalent bonding method can be used to join the first substrate W1 disposed in the lower module 100 and the second substrate W2 disposed in the upper module 200.

[0069] The substrate bonding apparatus 25 described below is illustrated as follows: a lower module 100 is disposed below the upper module 200 and includes a first chuck 110, deformation units 120 and 130, and a deformation plate 140; and an upper module 200 is disposed above the lower module 100 and includes a second chuck 210 and a top push rod 220 for bonding the first substrate W1 and the second substrate W2. However, this disclosure is not limited thereto.

[0070] As another example of modification, the first chuck 110, deformation units 120 and 130, and deformation plate 140 can be positioned at the top, and the top push rod 220 can be positioned at the bottom. That is, the lower module 100 and the upper module 200 can be rotated 180 degrees, allowing their vertical positions to be changed. In this way, various modification examples of the substrate bonding device 25 are possible.

[0071] The following description of module 100 will be based on the accompanying drawings.

[0072] Figure 3 It shows Figure 2 Region A is shown, along with a diagram of the lower and upper modules. Figure 4 It shows Figure 3 The graph of region B.

[0073] Figures 5 to 8 It continues Figure 3 A diagram showing the process of bonding the second substrate W2 to the first substrate W1 is presented sequentially.

[0074] refer to Figures 3 to 8 According to some embodiments of the present disclosure, the substrate bonding apparatus 25 includes a lower module 100 and an upper module 200.

[0075] First, the lower module 100 may include a first chuck 110, a deformation plate 140, and deformation units 120 and 130.

[0076] The first chuck 110 can be set on the worktable 25M (see...). Figure 2 The first chuck 110 can be raised and lowered by the operation of the worktable 25M, and can have a diameter larger than that of the first substrate W1. A vacuum pump can be provided in the first chuck 110, allowing the first substrate W1 to be vacuum-adsorbed via the deformable plate 140. The vacuum pump can apply vacuum pressure for vacuum adsorption or release vacuum pressure to release vacuum adsorption.

[0077] However, the first chuck 110 and the second chuck 210 are not limited to being provided with vacuum pumps for supporting substrates W1 and W2, and various modifications such as mechanical clamping methods are possible, as long as they do not conflict with this disclosure.

[0078] The deformable plate 140 can support the first substrate W1. The deformable plate 140 can be variably positioned above the first chuck 110. The deformable plate 140 can be configured to deform the flat scaling plate into a convex hemisphere to provide scaling compensation for the first substrate W1 according to the second substrate W2.

[0079] For example, the deformable plate 140 may be configured as a scaling plate made of aluminum or silicon carbide (SiC), but this is merely an example and this disclosure is not limited thereto.

[0080] In order to deform the deformable plate 140 into a hemispherical shape, the edge of the deformable plate 140 is held by, for example, a clamping unit 170 (see...). Figure 9 It is fixed to the first chuck 110, and the inner portion of the edge of the deformable plate 140 can be deformed into a convex shape (e.g., an upward convex shape) by an external force generated by the operation of the deformable units 120 and 130.

[0081] When the deformable plate 140 is deformed into a convex hemispherical shape, the first substrate W1, which is supported on the deformable plate 140 by vacuum adsorption, can be deformed into a convex hemispherical shape according to the shape of the deformable plate 140 (see...). Figure 5 ).

[0082] The deformable plate 140 may have multiple vacuum holes for vacuum adsorption of the first substrate W1. Furthermore, the deformable plate 140 may have embossing and / or baffles 141 (with alternating grooves) formed on its upper surface, which serves as the adsorption surface, so that the first substrate W1 does not bend in a specific direction or experience external force during vacuum adsorption (see [link]). Figure 4 ).

[0083] Furthermore, according to some embodiments of this disclosure, the deformable plate 140 can be deformed into a convex hemisphere to provide a scaling compensation amount for the first substrate W1. However, over-expansion and under-expansion occur near the edge region of the first substrate W1 (which may be the outer region of the reference line), and the scaling compensation amount needs to be adjusted, which can be adjusted by the deformable units 120 and 130.

[0084] The deformation units 120 and 130 are configured to change the shape of the deformation plate 140 and / or adjust the scaling compensation amount of the first substrate W1, and can be disposed in the space between the first chuck 110 and the deformation plate 140.

[0085] As an example, deformable units 120 and 130 may include a main support 120 and an auxiliary support unit or auxiliary support 130.

[0086] The main support member 120 can compress the deformable plate 140 in an upward direction, causing the deformable plate 140 to have a hemispherical shape. The volume of the main support member 120 can expand due to the inflow and outflow of fluid to compress the deformable plate 140, or its volume can shrink, causing the deformable plate 140 to return to a flat plate. The fluid flowing into and out of the deformable units 120 and 130 can be, for example, air, but is not limited to, and can be provided as water, compressed air, and / or inert gas, etc.

[0087] In some embodiments, the main support 120 may deform due to the inflow and outflow of fluid, but is not limited thereto, and may be subjected to electric, magnetic fields and / or shape memory metal and associated with a feedback control sequence.

[0088] Furthermore, the main support 120 can be configured as a closed curve structure, and, as an example, can have a centrally penetrating annulus (see...). Figure 19 Therefore, the first sensor S1 and the first target T1 can be set as a single unit at the center of the main support 120 without interfering with the main support 120.

[0089] For example, if the main support is set in a hemisphere without a ring shape at the center of the deformable plate 140, it is difficult to provide the first sensor S1 and the first target T1 inside the hemisphere main support to change the center height of the deformable plate 140.

[0090] That is, the thickness of the main support member inevitably changes with volume expansion / contraction; in other words, elastic changes, time-varying variations, hysteresis, and / or degradation of the rubber material are inevitable. Consequently, when measuring the height change of the main support member inside the hemispherical main support member, an error occurs because the thickness change due to the material properties of the main support member is sensed as a height change. This inevitably degrades the sensing accuracy of the first sensor S1 of the substrate bonding device 25, which provides scaling compensation in micrometers.

[0091] However, since the main support member 120 according to some embodiments has a similar annular, centrally penetrating structure, the first sensor S1 and the first target T1 are positioned at the central portion of the main support member 120 without interfering with the main support member 120. Furthermore, the first sensor S1 can sense the height of the deformable plate 140 regardless of changes, hysteresis, and / or degradation of the main support member 120 over time. Accordingly, the sensing accuracy is not degraded, and the deformable units 120 and 130 can be controlled according to process conditions.

[0092] Furthermore, since the shape of the deformable plate 140 is modified by setting multiple domes in a virtual ring within the main support 120, but rather by forming the shape deformation of the deformable plate 140 by a single annular main support 120, the deformable plate 140 is compressed through line contact within the annulus of the main support 120, rather than through point contact at multiple points. Accordingly, a uniform scaling compensation amount is provided in the radial direction, and no local reverse error occurs.

[0093] However, the main support 120 is not limited to a ring shape, and various modified examples (e.g., polygonal, butterfly-shaped, or rod-shaped) are possible, for example, penetrating the center in the same or similar manner as the second dome 130B (see example). Figure 10 (and at least part of it is in line contact)

[0094] Furthermore, since the main support member 120 is arranged in a ring shape and does not compress the center portion of the deformable plate 140 (i.e., does not compress the center of the deformable plate 140 in a point-contact manner), the force is not concentrated on the deformable plate 140 in a point-contact manner, and the problem of performance degradation due to center portion alignment can be mitigated or prevented.

[0095] Furthermore, since the deformation plate 140 (whose shape is deformed by the main support 120) does not begin to deform at the peak point (the highest point of the dome-shaped deformation plate 140), but rather the ring begins to deform from below the peak point, the deformation force is not concentrated in the central part that is the peak point, and the shape of the deformation plate 140 can be uniformly deformed to the edge, and the scaling compensation amount can be uniformly provided according to the design.

[0096] Furthermore, since the deformation plate 140 is deformed by applying positive pressure to the main support 120 (which has a separate space disposed below the deformation plate 140), rather than by applying positive pressure to the space between the first chuck 110 and the deformation plate 140, there is no problem of air pressure leakage to the outside of the space between the first chuck 110 and the deformation plate 140, and air pressure leakage can be controlled without considering it. Since there is no need to provide an O-ring structure between the first chuck 110 and the deformation plate 140 to seal the space between them, the problem of the deformation plate 140 twisting due to the reaction force of the O-ring can be prevented. That is, the precision limitations of the substrate bonding device 25, which requires micron-level precision, can be improved.

[0097] The main support 120 may include, for example, a first base 121 and a first expander 123.

[0098] Unlike the first expander 123 which has a deformable shape, the first base 121 can be provided as a non-deformable material, or can be set to a non-deformable strength / thickness, and prevent the first expander 123 from deviating from its designed position during deformation, thereby preventing increased manufacturing errors during repeated processes.

[0099] A first base 121 is disposed above the first chuck 110, and its upper part is open and hollow, allowing the insertion of a first expander 123. As an example, the first base 121 may be configured as an annular baffle structure with an open top, exposing the first expander 123. That is, when the first expander 123 is configured as a tube, the first base 121 may be disposed in the wall structure surrounding each of the inner and outer sides of the tube.

[0100] Since this first base 121 can limit the lateral expansion of the first expander 123 and induce upward expansion, it is not necessary to supply too much fluid to the fluid extending in the lateral direction, and fluid control can be accurate and easy.

[0101] Fluid can be supplied from the first fluid regulator to the first expander 123, and the upper end protruding upward from the first base 121 due to volume expansion can compress the deformable plate 140. Alternatively, the first fluid regulator can collect fluid or discharge fluid to the outside, and the first expander 123 can be at least partially folded and stored in the hollow portion of the first base 121 due to volume reduction.

[0102] Here, since the first expander 123 of the main support 120 deforms the shape of the deformable plate 140 by means of a ring-distributed load rather than by point contact, and is provided as an indirect method using positive pressure rather than a direct pressure method using an actuator, concerns about performance changes caused by cracks and / or wear of the deformable plate 140 that may occur due to the direct pressure method can be reduced.

[0103] As an example, the first expander 123 may be made of a rubber material and may have a Shore hardness of 50 to 60. As another example, the first expander 123 may be configured as a shape memory metal covering the upper end of the first substrate 121.

[0104] According to some embodiments, the first expander 123 can be configured as, but is not limited to, an annular tube. As another example, the first expander 123 can be configured to cover the space of the first base 121 and seal the space between the first base 121 and the first expander 123, allowing fluid to flow in and out. This can have the same structure as the auxiliary support unit 130, which will be referenced... Figure 12 and Figure 13 Please provide an explanation.

[0105] The first expander 123 can be made of rubber material, and its volume can be varied by the inflow and outflow of fluid. Since the first expander 123 is simply inserted into the interior of the first base 121 and does not need to be fixed to the first chuck 110 by adhesive, the first expander 123 only needs to have a thickness that will not tear when the deformable plate 140 is compressed. Furthermore, since the first expander 123 does not need to be excessively thick, it can be easily mounted on the chuck 110, even in confined spaces. However, this is merely an example, and the first expander 123 can be fixed to the first chuck 110 by adhesive.

[0106] In some embodiments, as an example, the main support frame 120 is described as including a first base 121 and a first expander 123. However, various modifications are possible, such as omitting the first base 121 and only providing the first expander 123 to compress the deformable plate 140.

[0107] The auxiliary support unit 130 may be disposed outside the main support 120, and various modifications are possible, such as being able to change volume by the inflow and outflow of fluid in the same or similar manner as the main support 120, or being able to apply electric, magnetic and / or shape memory metal.

[0108] For example, the auxiliary support unit 130 may include a second base 131 and a second expander 133.

[0109] Here, the second base 131 can be configured as a baffle structure in the same or similar manner as the first base 121, and the second expander 133 can have a tubular shape in the same or similar manner as the first expander 123, or it can have a structure that adjusts the volume by allowing fluid to flow into and out of the sealed space while covering the second base 131. That is, the second base 131 and the second expander 133 can have the same mechanism as the first base 121 and the first expander 123. Furthermore, the second expander 133 can be made of rubber material in the same or similar manner as the first expander 123, and can have a Shore hardness of 50 to 60.

[0110] Meanwhile, the auxiliary support unit 130 is not limited to the example of being able to change its volume by the inflow and outflow of fluid, and various modified examples are possible, for example, the protruding length can be changed to adjust the height, and as another example, it can be set as an actuator whose protruding length is changed.

[0111] The upper module 200 may include a second chuck 210 and a top push rod 220.

[0112] The second chuck 210 can support the second substrate W2, which is opposite to the first substrate W1.

[0113] The second chuck 210 can be mounted on the gantry 25G and can have a diameter larger than that of the second substrate W2. The second chuck 210 can be equipped with a vacuum pump to vacuum-adsorb the second substrate W2 in the same manner as the first chuck 110. The vacuum pump can apply vacuum pressure to perform vacuum adsorption or release vacuum pressure to release vacuum adsorption.

[0114] Furthermore, according to the modified example embodiment, the second chuck 210 can be in a state where it does not vacuum-adsorb the entire surface of the second substrate W2, but rather vacuum-adsorbs a portion of the second substrate W2 and releases the vacuum adsorption on the remaining area to perform scaling compensation adjustment. (Refer to...) Figure 26 and Figure 27 To illustrate this point.

[0115] The top push rod 220 can penetrate or extend through the second chuck 210 to push the second substrate W2 in a downward direction. However, the upper module 200 is not limited to the example of pressing the second substrate W2 in a downward direction by the pushing action of the top push rod 220, and various modified examples are possible, such as the example of expanding the pressing mechanism by air or gas injection, and as another example, the second substrate W2 can be joined from the center portion outward between the first substrate W1 by the expansion operation of the force application device.

[0116] Furthermore, although in some embodiments the top push rod 220 is shown as having a fin shape, various modifications are possible, such as the central portion being configured as a penetrating column (e.g., a cylinder) such that the lower surface has an annular cross section.

[0117] The substrate bonding apparatus 25 can perform the bonding process as follows.

[0118] refer to Figure 3 and Figure 4 The first substrate W1 can be supported by the lower module 100 through vacuum adsorption, and the second substrate W2 can be supported by the upper module 200 through vacuum adsorption.

[0119] At this time, it is possible to achieve a state where the deformation units 120 and 130 of the lower module 100 do not compress the deformation plate 140 and the top push rod 220 of the upper module 200 does not compress the second substrate W2. That is, the lower module 100 and the upper module 200 can achieve a state where the first substrate W1 and the second substrate W2 are only vacuum-adsorbed, and both the first substrate W1 and the second substrate W2 can achieve a flat state.

[0120] Next, refer to Figure 5First, the deformation units 120 and 130 of the lower module 100 can compress the deformation plate 140, and the deformation plate 140 can be deformed into a hemispherical shape. When the deformation plate 140 is completed and the first substrate W1 is also deformed into a hemispherical shape, the central portion of the second substrate W2, which is vacuum-adsorbed to the upper module 200, protrudes downward (e.g., bulges downward) through the top push rod 220. At this time, the central portion of the second substrate W2 abuts against the central portion of the first substrate W1, which is deformed into a hemispherical shape.

[0121] Next, refer to Figure 6 Hydroxyl (-OH) groups formed on the surfaces of substrates W1 and W2 form dangling bonds on the surfaces of substrates W1 and W2, and diffuse at the bonding surface of substrates W1 and W2, then as... Figure 7 As shown, the bonding of substrates W1 and W2 can be completed.

[0122] Next, refer to Figure 8 The joined substrates W1 and W2 can be transferred by the transfer robot of the second transfer module 35 (see...). Figure 1 The deformation plate 140 is thus restored to a flat shape, and the substrates W1 and W2 are raised and lowered from the deformation plate 140 by the lifting pin 150.

[0123] In some embodiments, since the main support 120 and the lifting pin 150 that applies positive pressure thereto are separately disposed (i.e., the lifting pin 150 is configured not to penetrate the main support 120), the lifting pin 150 will not damage the sealing structure of the main support 120 and can maintain structural stability.

[0124] In the following text, various modification examples will be illustrated with reference to the accompanying drawings, and for the sake of brevity, repeated descriptions of the same configurations with the same functionality may not be provided.

[0125] Figure 9 This is a diagram illustrating the lower module according to some embodiments of the present disclosure.

[0126] refer to Figure 9 According to some embodiments, the lower module 100 may include references Figures 3 to 8 The first chuck 110, the deformable plate 140, and the deformable units 120 and 130 described herein may include a clamping unit 170.

[0127] The thickness of the edge region 140S3 of the deformable plate 140 in the first embodiment can be less than the thickness of the central portion or region 140S1. Furthermore, the deformable plate 140 can have a step formed in the middle or central region S140S2 between the central portion 140S1 and the edge region 140S3. That is, the thickness of the deformable plate 140 can be formed to decrease from the central portion 140S1 toward the edge region 140S3.

[0128] The thickness of the deformable plate 140 can vary to make it easier to deform into a convex hemispherical shape. That is, this is for the purpose of utilizing the condition that the deformation rate is smaller when the thickness of the deformable plate 140 is thicker and larger when the thickness is thinner.

[0129] Since the substrate bonding device 25 according to some embodiments bonds substrates W1 and W2 on which micron-sized chips are disposed, the height change may be small, for example, less than 1 cm. However, by making the thickness of the deformable plate 140 smaller in the outward radial direction, the deformation of the central portion of the deformable plate 140 can be smaller, while the curvature at the edge region 140S3 can be formed to be larger.

[0130] The deformable plate 140 may also have an inclined surface that is at least partially inclined upward in the edge region 140S3. The inclined surface may have an inclination angle of 10 degrees or less, for example, an inclination angle of 1 degree or more and 5 degrees or less. In this way, the deformable plate 140 can be configured to be easily deformed into a curved shape.

[0131] The deformable plate 140 may include a first scaling compensation region and a second scaling compensation region divided along a clockwise / angular direction. The thickness of the first scaling compensation region may be thinner than the thickness of the second scaling region. Therefore, based on a first substrate W1 such as a saddle-shaped substrate twisted due to a twisting phenomenon, regions with significantly prominent twisted shapes can be distinguished from regions with smaller twisted phenomena, and a scaling compensation amount can be applied to each region.

[0132] Here, the saddle-shaped substrate can refer to a substrate in which different curvatures of the first substrate W1 are generated due to the torsion phenomenon, and a saddle shape is generated due to the generation of a torsion region in which the torsion shape is significantly prominent.

[0133] The first chuck 110 may include rib units or ribs 111, 112, 113, 142 and 143, and sensor units S1, S2 and T1.

[0134] Rib units 111, 112, 113, 142 and 143 are configured to prevent the deformable plate 140 from sagging and can support the deformable plate 140 by means of the gap formed between the first chuck 110 and the rib unit.

[0135] For example, rib units 111, 112, 113, 142 and 143 may include a first rib 111 and second ribs 112, 113, 142 and 143.

[0136] The first rib 111 is configured to prevent the central portion 140S1 of the deformable plate 140 from sagging when the joining process is not performed (i.e., when the deformable units 120 and 130 are not in operation). The first rib 111 may be configured as a cylinder with an open top at the central portion of the annular main support 120.

[0137] The first rib 111 can be configured as a cylinder (i.e., the central part of the first rib 111 is hollow), and the first sensor S1 can be disposed at the central part of the first rib 111.

[0138] In addition, the first rib 111 can be fixed to the first chuck 110, or it can be integrally set with the first chuck 110, but is not limited thereto.

[0139] The second ribs 112, 113, 142, and 143 are configured to prevent the middle region S140S2 and / or the edge region 140S3 of the deformable plate 140 from sagging, and may be disposed outside the main support member 120. In some embodiments, for example when the first scaling compensation region of the deformable plate 140 is thinner than the second scaling compensation region, the second ribs 112, 113, 142, and 143 may be disposed in the second scaling compensation region, but are not limited thereto, and the second ribs 112, 113, 142, and 143 may be disposed in the first scaling compensation region.

[0140] Multiple second ribs 112, 113, 142, and 143 may be arranged in a radial direction and / or radially. The second ribs 112, 113, 142, and 143 may be configured as a single protruding structure, but are not limited thereto, and may be configured as upper and lower structures, and may include lower ribs 112 and 113 and upper ribs 142 and 143.

[0141] Lower ribs 112 and 113 may be disposed on the upper surface of the first chuck 110. Upper ribs 142 and 143 may be disposed on the lower surface of the deformable plate 140, and may be opposite to the lower ribs 112 and 113 and have a diameter larger than that of the lower ribs 112 and 113. Furthermore, various modifications are possible, for example, the upper ribs 142 and 143 may be directly connected to the lower surface of the deformable plate 140 or may be connected via a separate plate.

[0142] Sensor units S1, S2 and T1 can sense the height of the deformable plate 140.

[0143] For example, sensor units S1, S2 and T1 may include a first sensor S1, a first target T1, a second sensor S2 and a second target.

[0144] The first sensor S1 can be disposed at the center of the main support 120 and at the first rib 111. The first target T1 can be disposed at the center of the lower surface of the deformable plate 140 and can be provided as the sensing surface of the first sensor S1.

[0145] Second sensor S2 (see Figure 19 The second target can be positioned outside the main support 120 at a location opposite the edge of the first substrate W1. The second target can be provided as the sensing surface of the second sensor S2 on the lower surface of the deformable plate 140.

[0146] The first sensor S1 and the second sensor S2 can be provided as sensors with resolution, repeatability, and hysteresis of less than 100 nm, enabling ECAT communication, and can be provided as, for example, capacitive sensors, interferometers, confocal displacement sensors, or eddy current sensors. However, when the deformable plate 140 is provided as a ceramic material, the capacitive sensor may have difficulty sensing the ceramic material. Therefore, the first target T1 and the second target T2 can be provided as metallic materials at positions opposite to the first sensor S1 and the second sensor S2, so that the first sensor S1 and the second sensor S2 can sense the metallic material.

[0147] As an example, various modifications are possible, such as the first target T1 and the second target being configured such that metal powder is coated on the lower surface of the deformable plate 140 or a metal-coated sticker is attached, or the structure in which the metal plate is joined can be configured.

[0148] Furthermore, the space between the first chuck 110, on which the first sensor S1 and the first target T1 are mounted, and the deformable plate 140 can be sealed to prevent leakage points, and for example, an O-ring 111R can be provided. Here, a leakage point can be the external space of the main support 120, used to eliminate time-varying factors (e.g., hysteresis) in the central and edge regions of the lower space of the deformable plate 140, and may become a factor reducing structural reliability, which may apply negative pressure to the interior of the first chuck 110. Therefore, in some embodiments, an O-ring 111R is provided.

[0149] In addition, sensor units S1, S2 and T1 may include a grounding structure for reducing fluctuations in the electrical transmission signal inside the first chuck 110 caused by factors such as hysteresis, and the grounding cable of the grounding structure may be configured to connect the outside of the first chuck 110 to a feedthrough structure of the first target T1 to prevent leakage.

[0150] The deformation units 120 and 130 can perform feedback by sensing height changes by sensor units S1, S2, and T1. The feedback control structure can be a PID control sequence, which senses the height of the deformation plate 140 in real time by measuring the displacement of the first target T1 at the center portion of the deformation plate 140 in real time, and if the height value of the deformation plate 140 at the time of detection is greater than a specified formula value (i.e., greater than a preset value), the pressure corresponding to the minimum resolution of the regulator is reduced, and if the pressure is less than the preset value, pressure is applied to make the height of the deformation plate 140 converge to the preset value.

[0151] Meanwhile, the second sensor S2 can be omitted. In this case, the auxiliary support unit 130 is operated first, and as an example, positive pressure is applied to the auxiliary support unit 130, and the second sensor S1 detects the height of the deformable plate 140. Then, positive pressure is applied to the main support member 120, and the first sensor S1 detects the height of the deformable plate 140. In this way, various modifications are possible; for example, the first sensor S1 can detect the height change of the deformable plate 140 caused by the auxiliary support unit 130 and the central portion of the deformable plate 140, and the single first sensor S1 can also perform the function of the second sensor S2.

[0152] The clamping unit 170 can constrain the deformable plate 140 so that the deformable plate 140 does not detach from the first chuck 110. For example, the clamping unit 170 may include a first ring 173, a second ring 171, and a coupling member 175.

[0153] The first ring 173 can be positioned below the first chuck 110. The second ring 171 can be positioned above the deformable plate 140. That is, the first chuck 110 and the deformable plate 140 can be positioned between the first ring 173 and the second ring 171.

[0154] The first chuck 110 and the deformable plate 140 between the first ring 173 and the second ring 171 are constrained by the first ring 173 in the downward direction and by the second ring 171 in the upward direction, and it is not necessary to tighten the coupling 175 into the first chuck 110 and the deformable plate 140.

[0155] Here, the coupling element 175 is coupled to the first ring 173 and the second ring 171, but is not bolted to the deformable plate 140 and the first chuck 110. Instead, it can simply penetrate or extend through the deformable plate 140 and the first chuck 110. In this case, the coupling element 175 can be configured as a bolt or other fastener that is tightened into at least one of the first ring 173 and the second ring 171 and prevented from disengaging by the (bolt) head on the remaining rings. The coupling element 175 can be bolted only to the first ring 173 and / or the second ring 171.

[0156] For example, the coupling element 175 can be configured as a bolt with a certain diameter that is not bolted to the deformable plate 140 and the first chuck 110. That is, the coupling element 175 is configured to have a bolt with a diameter smaller than the through hole of each of the deformable plate 140 and the first chuck 110 at a position corresponding to the bolt holes of the first ring 173 and the second ring 171 that are bolted to the coupling element 175, and may not be bolted to the deformable plate 140.

[0157] Alternatively, the outer surface of the coupling 175 corresponding to the positions of the deformable plate 140 and the first chuck 110 may be formed as flat (e.g., smooth) without threads, so that the coupling 175 is not screwed into the deformable plate 140 and the first chuck 110.

[0158] This clamping unit 170 constrains the deformable plate 140, which is disposed between the first ring 173 and the second ring 171, to the first chuck 110, but does not bolt it to each of the deformable plate 140 and the first chuck 110, thereby preventing the deformable plate 140 and the first chuck 110 from being deformed by bolting or damaged by excessive bolt tightening force.

[0159] Furthermore, when the deformable plate 140 and the first chuck 110 are bolted together (e.g., when the shape of the deformable plate 140 is deformed), different compressive forces are formed between the bolted area and its surroundings, and a twisted shape may form in the deformable plate 140. However, since the lower module 100 according to some embodiments has a structure in which the bolts are not tightened into the deformable plate 140 and the first chuck 110 but only penetrate them, twisting of the deformable plate 140 and / or the first chuck 110 can be reduced or prevented.

[0160] In some embodiments, the auxiliary support unit 130 of the deformable units 120 and 130 is shown as a single structure / unit configured in the radial direction of the main support 120, but this disclosure is not limited thereto.

[0161] Multiple auxiliary support units 130 can be provided in the radial direction of the main support member 120, such as a first dome 130A and a second dome 130B, for example. Figure 10 As shown. According to the modified example, the auxiliary support unit 130 may include a first dome 130A and / or a second dome 130B.

[0162] That is, various modifications are possible, for example, the auxiliary support unit 130 may include a first dome 130A, include a first dome 130A and a second dome 130B, or include only the second dome 130B.

[0163] In addition, the chuck retainer 110HD that connects the first chuck 110 and the worktable 25M can be fixed to the first chuck 110 by vacuum adsorption, thereby omitting the bolt connection, but is not limited thereto.

[0164] Other modification examples will be described below with reference to the accompanying drawings.

[0165] However, it should be noted that other embodiments can be implemented by combining one or more exemplary embodiments of this disclosure with known techniques.

[0166] For example, the clamping unit 170 and the sensor units S1, S2 and T1 are not limited to the reference. Figure 9 The clamping unit and sensor unit described herein can be provided in any of the example embodiments described herein. As another example, refer to... Figure 10 The first dome 130A and the second dome 130B described herein can be provided in any of the example embodiments described herein.

[0167] Figure 10 This is a front view of the lower module according to some embodiments of the present disclosure. Figure 11 It shows Figure 10 The graph of region C, and Figure 12 It shows Figure 10 The graph of region D. Figure 12 It shows Figure 12 The diagram shows the state of the second dome in contraction.

[0168] refer to Figures 10 to 13 In the same or similar manner as described above, the lower module 100 of the second embodiment may include a first chuck 110, a deformation plate 140, and deformation units 120 and 130.

[0169] Additionally, according to some embodiments, the lower module 100 may further include an auxiliary pipeline L4 and a second fluid regulator, such that the internal pressure outside the deformation units 120 and 130 is adjusted in the space between the first chuck 110 and the deformation plate 140. The second fluid regulator may be configured as a compressor and / or vacuum pump in the same / similar manner as the first fluid regulator connected to the main pipelines L1, L2, and L3, and may apply negative pressure to the space between the first chuck 110 and the deformation plate 140 to create a vacuum atmosphere, but is not limited thereto.

[0170] As another example, a positive pressure can be applied to the space between the first chuck 110 and the deformable plate 140 to adjust the scaling compensation amount of the first substrate W1. However, since the auxiliary line L4 and the second fluid regulator facilitate the shape deformation of the deformable plate 140, fluid with a flow rate and / or hydraulic pressure smaller than the fluid volume / hydraulic pressure through the first fluid regulator can pass through the auxiliary line L4 and the second fluid regulator.

[0171] That is, according to the modified example, the shape of the deformation plate 140 is deformed by the deformation units 120 and 130 abutting against it, and at the same time, a vacuum atmosphere is formed in the space between the first chuck 110 and the deformation plate 140, and the scaling compensation amount of the first substrate W1 can be adjusted by the deformation plate 140. Alternatively, the shape of the deformation plate 140 is mainly deformed by the deformation units 120 and 130 (e.g., 90% or greater shape deformation factor), and the shape of the deformation plate 140 is additionally deformed by the positive pressure additionally applied to the space between the auxiliary pipeline L4 and the second fluid regulator (e.g., 10% or less shape deformation factor), and the scaling compensation amount can be adjusted.

[0172] Positive and / or negative pressure can be provided to the deformable units 120 and 130 of the second embodiment. In order to provide positive and / or negative pressure to the deformable units 120 and 130, the deformable units 120 and 130 may be provided with main pipelines L1, L2 and L3 through which fluid flows.

[0173] Fluid can flow into and out of main pipelines L1, L2, and L3 individually, such that the first pipeline L1, the second pipeline L2, and the third pipeline L3, which are individually connected to the deformation units 120 and 130, can operate independently. That is, fluid for applying positive pressure flows in the first pipeline L1 and / or the second pipeline L2, and fluid for applying negative pressure flows out from the third pipeline L3. Each of the main pipelines L1, L2, and L3 can be equipped with a valve to regulate the fluid flow.

[0174] First fluid regulators (e.g., compressors, air ejectors, and / or vacuum pumps) may be provided on the main pipelines L1, L2, and L3, and may be configured to apply positive and / or negative pressure, but this is only an example and the present disclosure is not limited thereto.

[0175] The auxiliary support unit 130 may be provided with a first dome 130A and a second dome 130B.

[0176] The first dome 130A may be disposed, for example, in the edge region of the first substrate W1, such as at the edge or outside of the central portion of the first substrate W1. The second dome 130B may be disposed adjacent to the edge region of the first substrate W1 and may be opposite to the edge of the first substrate W1, or located outside the edge of the first substrate W1.

[0177] In some embodiments, a positive pressure is provided to the first dome 130A and a negative pressure is provided to the second dome 130B. The first dome 130A is configured to compress the deformable plate 140, and the second dome 130B is configured to pull the deformable plate 140, but this is only an example.

[0178] As another example, the first dome 130A and the second dome 130B may differ only in location and have the same shape and / or structure. That is, positive pressure may be provided to each of the first dome 130A and the second dome 130B, or negative pressure may be provided to each of the first dome 130A and the second dome 130B.

[0179] Alternatively, positive pressure can be provided to each of the first dome 130A and the second dome 130B, and only their shape and position can differ.

[0180] Various modifications are possible; for example, it is possible to provide negative pressure to the first dome 130A and positive pressure to the second dome 130B.

[0181] Furthermore, the scaling compensation amount of the first substrate W1 can be adjusted by adjusting the negative and positive pressures in the auxiliary support unit 130, which will refer to... Figure 17 and Figure 18 Please provide an explanation.

[0182] And, as Figure 11 As shown, the second dome 130B and the deformable plate 140 can be configured to achieve a vacuum seal, thereby providing negative pressure to the second dome 130B and pulling the deformable plate 140.

[0183] For example, a first adsorption plate 140R with a hollow center is disposed below the deformable plate 140, and a second dome 130B, a first chuck 110, or a second adsorption plate can be disposed on the upper surface of the second dome 130B to at least partially surround the first adsorption plate 140R. Furthermore, an O-ring 130BR can be provided to seal between the first adsorption plate 140R and the second dome 130B, the first chuck 110, or the second adsorption plate 140R.

[0184] However, this is merely an example, and the vacuum sealing structure can be disposed between the second dome 130B and the deformable plate 140, with negative pressure only formed in the second dome 130B. Alternatively, various modified examples are possible, for example, negative pressure is formed in the second dome 130B and examples of structures that reduce the supporting force of the deformable plate 140 according to the downwardly concave shape.

[0185] Furthermore, the thickness of the upper surface of the second dome 130B can be configured such that the thickness decreases towards the edge of the substrate W1, and the deformation rate changes in the same / similar manner (i.e., the thickness of the edge region 140S3 is thinner than the thickness of the central portion 140S1 of the deformable plate 140), as referenced. Figure 9 As stated above.

[0186] refer to Figure 12 and Figure 13The volume of the second expander 133 of the first dome 130A can be reduced, and it can be at least partially folded and stored in the hollow portion of the second base 131. That is, the second expander 133 can be stored in the hollow portion of the second base 131 in a partially folded form, so that the second expander 133 will not over-expand during expansion, for example, it will not expand at 100% expansion capacity, but at 90% expansion capacity. This can reduce damage caused by over-expansion of the second expander 133 and improve repeatability reliability, thereby increasing the number of process repetitions.

[0187] This can be applied in the same / similar way to the first expander 123 of the main support 120, and a portion of the first expander 123 can be folded and stored on the first base 121.

[0188] According to the modified example, the first base 121 and the second base 131 can be omitted, and each of the first expander 123 and the second expander 133 can be engaged with the first chuck 110. Preferably, the thickness is at least 15 mm or more, such that the first expander 123 and the second expander 133 are properly secured by engagement.

[0189] The provision of negative and / or positive pressure in the auxiliary support unit 130 will be described below with reference to the accompanying drawings.

[0190] However, before explaining the provision of negative and / or positive pressure to the auxiliary support unit 130, the first substrate W1 will be explained first.

[0191] That is, in the embodiments of this disclosure, an auxiliary support unit 130 is provided for the deformation units 120 and 130 to improve the yield of the chip (see [link]). Figure 15 (Note: The reference numerals are not shown in the accompanying drawings), but before explaining the scaling compensation adjustment of the auxiliary support unit 130 to which negative / positive pressure is provided, the first substrate W1 to which the scaling compensation adjustment needs to be explained will be described with reference to the accompanying drawings.

[0192] Figure 14 This diagram shows the first substrate and the second substrate. Figure 15 It is a plan view showing the state of the first substrate bulging due to the deformation plate, and Figure 16 It is along Figure 15 The cross-sectional view taken by the cutting line I-I'.

[0193] First, refer to Figure 14 The first substrate W1, which is set to be in the shape of a flat plate, is configured to have a smaller diameter than the second substrate W2 during the process of deforming into a convex hemisphere in sync with the shape deformation of the deformable plate 140 (i.e., during the process of the first substrate W1 convexing upward), the area is enlarged, and a scaling compensation amount can be provided to change to an area corresponding to the second substrate W2.

[0194] For example, the second substrate W2 may have a radius of 30 cm, and the first substrate W1 may be configured to have a radius of 29.3 cm to 29.8 cm.

[0195] The chip on the first substrate W1, which is deformed into a convex shape, can be bonded in a state corresponding to the chip on the second substrate W2.

[0196] However, due to various factors such as the anisotropic characteristics of the wafer, the first substrate W1, which is deformed into a convex shape, may experience varying degrees of expansion in its central and edge regions. In this case, the chips in areas of the first substrate W1 that are excessively or insufficiently expanded (expanding in the direction opposite to excessive expansion) may not correspond to the chips on the second substrate W2, leading to a deterioration in product yield.

[0197] refer to Figure 15 and Figure 16 The arrow indicates the direction and size of the expansion of the first substrate W1.

[0198] refer to Figure 15 Based on the reference line E1 of the edge region, the direction and size of the arrow indicate that the central portion of the first substrate W1 expands toward the edge region, and the edge region expands toward the center. Furthermore, excessive expansion occurs near the central portion of the first substrate W1 adjacent to the reference line E1 in the edge region, while insufficient expansion occurs in the edge region.

[0199] When excessive or insufficient expansion occurs near the reference line E1 in the edge region of the first substrate W1, the product yield may decrease, and the scaling compensation amount of the first substrate W1 needs to be adjusted. That is, it is necessary to compensate for insufficient and excessive expansion near the reference line E1 in the edge region and improve the chip yield.

[0200] In order to improve the chip yield, in some embodiments, an auxiliary support unit 130 is provided for the deformation units 120 and 130, and the auxiliary support unit 130 will be described with reference to the accompanying drawings.

[0201] Figure 17 This is a diagram illustrating a first substrate whose scaling compensation amount is adjusted by a first dome of a substrate bonding apparatus according to some embodiments of the present disclosure. Figure 18 This is a diagram illustrating the first substrate whose scaling compensation amount is adjusted by the second dome of the substrate bonding device according to some embodiments of the present disclosure.

[0202] refer to Figure 17 and Figure 18 The auxiliary support unit 130 may include a first dome 130A and / or a second dome 130B.

[0203] The following text illustrates an example where the first dome 130A provides positive pressure and the second dome 130B provides negative pressure, but as mentioned above, this is merely an example, and the first dome 130A can provide negative pressure and the second dome 130B can provide positive pressure.

[0204] Alternatively, depending on the scaling compensation amount design, various modification examples are possible, such as each of the first dome 130A and the second dome 130B providing positive pressure or each of the first dome 130A and the second dome 130B providing negative pressure.

[0205] exist Figure 17 and Figure 18 In the diagram, solid arrows indicate the direction and magnitude of the expansion of the first substrate W1, while dashed arrows indicate the forces by which the first dome 130A and / or the second dome 130B adjust the scaling compensation amount.

[0206] First, refer to Figure 17 A positive pressure can be applied to the first dome 130A to compress the deformable plate 140 upwards. Since the pressure applied to the first dome 130A generates a force at the reference line E1 in the edge region that causes the first substrate W1 to expand in the edge direction, the expansion force that is insufficient in the edge region can be counteracted, and the scaling compensation amount of the first substrate W1 can be adjusted.

[0207] refer to Figure 18 A negative pressure can be applied to the second dome 130B to pull the deformable plate 140 downward or reduce the supporting force of the deformable plate 140. When the second dome 130B pulls the deformable plate 140 or the supporting force is reduced, a force in the opposite direction to the direction of insufficient expansion is provided to the edge region of the first substrate W1, and the scaling compensation amount of the first substrate W1 can be adjusted.

[0208] In the following description, other embodiments of this disclosure will be illustrated with reference to the accompanying drawings, and for the sake of brevity, repeated descriptions of the same configurations having the same functions will not be provided.

[0209] In short, according to some embodiments, multiple auxiliary support units 130 (such as a first dome 130A and a second dome 130B) may be provided, and their shapes may be configured differently. The auxiliary support units 130 may have a centrally penetrating annulus like the main support member 120, and may be configured as polygonal, butterfly-shaped, etc., or may be configured as small protruding structures disposed on the main support member 120 along the radial and / or radial directions. Various modifications are possible; for example, the small protruding structures may be configured as examples of structures that move in the radial direction. This will be illustrated with reference to the accompanying drawings.

[0210] Figure 19This is a plan view showing the lower module according to some embodiments of the present disclosure. For simplicity and clarity, refer to... Figure 19 The main descriptions and references Figures 3 to 18 The differences explained.

[0211] refer to Figure 19 In the same or similar manner as described above, the lower module 100 may include a first chuck 110, a deformation plate 140, deformation units 120 and 130, and a clamping unit 170.

[0212] According to some embodiments, the deformable units 120 and 130 may include a first dome 130A and a second dome 130B, the first dome 130A being annular and the second dome 130B being configured as a plurality of compact structures having a diameter smaller than that of the main support 120, and may be arranged in large numbers around the periphery of the main support 120 and the first dome 130A. That is, a plurality of second domes 130B may be arranged along a virtual circle (e.g., spaced apart from each other in the circumferential direction).

[0213] As described above, other embodiments are possible by combining any one or more of the example embodiments with known techniques. It goes without saying that various modified examples are possible, such as providing positive pressure to the first dome 130A and the second dome 130B to compress the deformable plate 140, providing positive pressure to the first dome 130A to compress the deformable plate 140, and providing negative pressure to the second dome 130B to pull the deformable plate 140.

[0214] The reference numeral "LP" in the attached diagram indicates the lifting pin hole. Figure 8 The lifting pin 150 shown is disposed or accommodated in the lifting pin hole.

[0215] Figure 20 This is a plan view showing the lower module according to some embodiments of the present disclosure. For simplicity and clarity, refer to... Figure 20 This will mainly explain and provide references. Figures 3 to 19 The differences explained.

[0216] refer to Figure 20 In the same or similar manner as described above, the lower module 100 may include a first chuck 110, a deformation plate 140, deformation units 120 and 130, and a clamping unit 170.

[0217] In some embodiments of the variant units 120 and 130, unlike the case where the second dome 130B is configured as a small protruding structure, as an example, the second dome 130B has a structure with a central penetration similar to the first dome 130A, and may have a (continuous) ring shape.

[0218] The deformation units 120 and 130 may be provided in various modified examples as follows: applying positive pressure to each of the first dome 130A and the second dome 130B to compress the deformation plate 140, or applying positive pressure to the first dome 130A to compress the deformation plate 140 and applying negative pressure to the second dome 130B to pull the deformation plate 140, as shown in the third embodiment.

[0219] Figure 21 This is a plan view of the lower module according to some embodiments of the present disclosure. Figure 22 This is a plan view of the lower module according to some embodiments of the present disclosure, and Figure 23 This is a plan view of the lower module according to some embodiments of the present disclosure.

[0220] For the sake of brevity and clarity, the main references will be... Figures 21 to 23 To describe and reference Figures 3 to 20 The differences explained.

[0221] refer to Figures 21 to 23 In the same or similar manner as described above, the lower module 100 according to some embodiments may include a first chuck 110, a deformation plate 140, deformation units 120 and 130, and a clamping unit 170.

[0222] First, such as Figure 21 As shown, in deformation units 120 and 130, the auxiliary support unit 130 can be configured as a rhombus with a central penetrating shape, rather than an annular shape.

[0223] Furthermore, the auxiliary support unit 130 can be provided in various modified examples, and the auxiliary support unit 130 is not limited to being a single unit, but can of course be provided as multiple units in the radial direction, as shown in the figures. Although not shown in the figures, various modified examples are possible, for example, an annular first dome 130A can be provided and the second dome 130B can be provided as a rhomboid example.

[0224] The auxiliary support 130 is not limited to a rhombus shape, but can be set as a polygon (e.g., a rectangle or a square) with a central penetrating shape.

[0225] That is, in deformation units 120 and 130, such as Figure 22 As shown, the auxiliary support portion 130 can be configured as a hexagon. Alternatively, the auxiliary support portion 130 can also be configured as a pentagon or octagon with a central penetrating shape.

[0226] In yet another example, in deformable elements 120 and 130, such as Figure 23 As shown, the auxiliary support 130 can be configured as a butterfly shape with a central penetration. This is configured so that the reference line E1 of the edge region is formed as the reference line E1' of the deformed edge region, as... Figure 15 As shown, and corresponding to the first substrate W1 whose edge region is deformed into a butterfly shape.

[0227] Although the auxiliary support unit 130 in the above embodiment can be in a fixed position, the auxiliary support unit 130 is not limited to a fixed position. This will be explained with reference to the accompanying drawings.

[0228] Figure 24 This is a plan view showing the lower module according to some embodiments of the present disclosure. For the sake of brevity and clarity, reference will be made to... Figure 24 Main description and reference Figures 3 to 23 The differences explained.

[0229] refer to Figure 24 In the same or similar manner as described above, the lower module 100 may include a first chuck 110, a deformation plate 140, deformation units 120 and 130, and a clamping unit 170.

[0230] Furthermore, in the deformable units 120 and 130, the auxiliary support unit 130 is not configured as a ring, but rather multiple auxiliary support units can be configured as structures protruding along a virtual circle (e.g., spaced apart from each other in the circumferential direction) and can be configured to be movable in the radial direction.

[0231] For example, the first chuck 110 may have a track 139R on its upper surface, the track 139R having a length formed radially. The track 139R may be configured as a linear motion (LM) guide and may guide the movement direction of the auxiliary support unit 130.

[0232] The auxiliary support unit 130 can move along the track 139R. For example, the LM block connected to the LM guide can be configured to move by driving a linear motor.

[0233] In some embodiments, the track 139R is shown to have a length formed or extended in a radial direction, but is not limited thereto. Various modifications are possible, for example, examples where the length is formed in a radial or diagonal direction and can guide the movement direction of the auxiliary support unit 130 in a radial or diagonal direction.

[0234] As described above, the embodiments mentioned in this disclosure can be combined with each other to provide other modified examples. For example, various modified examples are possible, such as the following example: the auxiliary support unit 130 of one example embodiment is combined with the auxiliary support unit 130 of another example embodiment, the auxiliary support unit 130 can be configured to be partially movable along the track 139R, while being configured as an annular shape with a penetrating center, and can be configured as a structure whose shape changes from a circle to a butterfly shape or a polygon.

[0235] Furthermore, deformable elements 120 and 130 are not limited to dome and / or closed curve (ring, butterfly, etc.) structures, but other modified examples are possible, which will be referenced. Figure 25 Please provide an explanation.

[0236] Figure 25 This is a plan view showing the lower module according to some embodiments of the present disclosure. For the sake of brevity and clarity, reference will be made to... Figure 25 Main description and reference Figures 3 to 24 The differences explained.

[0237] refer to Figure 25 In the same or similar manner as described above, the lower module 100 according to some embodiments may include a first chuck 110, a deformation plate 140, deformation units 120 and 130, and a clamping unit 170.

[0238] Although the auxiliary support unit 130 in the above embodiments is described as being formed as a closed curve or a small dome, the auxiliary support unit 130 may also have a strip that protrudes outward according to the area that sinks to the surrounding area below, corresponding to the saddle-shaped first substrate W1.

[0239] For example, refer to Figure 25 When the upper and lower parts of the edge region of the first substrate W1 are excessively expanded relative to the left and right sides, the auxiliary support unit 130 can be configured as a strip with a length formed in the vertical direction to adjust the scaling compensation amount in the excessive expansion direction at the left and right sides of the edge region of the first substrate W1, and can be configured to provide positive pressure.

[0240] Alternatively, various modifications are possible, such as the following example: the auxiliary support unit 130 is configured to have a strip of length formed in the horizontal direction while providing negative pressure, and may be located at the upper and lower parts of the edge region of the first substrate W1.

[0241] The upper module 200 will be described below with reference to the accompanying drawings.

[0242] Figure 26 This is a plan view of the upper module according to some embodiments of the present disclosure, and Figure 27 It shows the relationship with Figure 26 The diagram shows the second substrate corresponding to the cut surface II-II'.

[0243] refer to Figure 26 and Figure 27 According to some embodiments, the second chuck 210 of the upper module 200 does not vacuum adsorb the entire surface of the second substrate W2, but can be in a vacuum adsorption partial area and release the vacuum adsorption in the rest to adjust the scaling compensation amount.

[0244] For example, in the first substrate W1 (see...) Figure 15 In this context, under-expansion may occur in specific regions adjacent to the reference line E1 of the edge region (compared to other regions). That is, as an example, the reference line E1 of the edge region can be deformed to form a shape like... Figure 15 The reference line E1' for the edge region is shown, and the edge region can be deformed into a butterfly shape.

[0245] When the second substrate W2 is bonded to the first substrate W1, the edge of the second substrate W2 in the first region A31 corresponding to the insufficient expansion region of the first substrate W1 can be vacuum-adsorbed, and the edge of the second substrate W2 in the second region A35 corresponding to the region where the insufficient expansion region is not formed is not vacuum-adsorbed, so that the first substrate W1, which is deformed into a butterfly shape according to its edge region, provides a scaling compensation amount.

[0246] Therefore, when the edge of the second substrate W2 falls onto the first substrate W1, the edge of the second substrate W2 in the first region A31 falls later than the edge of the second substrate W2 in the second region A35. The edge of the second substrate W2 in the first region A31 has a second height H2, and the edge of the second substrate W2 in the second region A35 has a first height H1. Thus, a height difference is generated between the edges of the second substrate W2 in the first region A31 and the second region A35, and the scaling compensation amount can be adjusted accordingly based on factors such as gravitational acceleration.

[0247] However, this is merely an example, and the second chuck 210 can vacuum-adsorb the entire surface of the second substrate W2. Alternatively, various modified examples are possible, for example, the second chuck 210 can vacuum-adsorb only the edges of the second substrate W2 without vacuum-adsorbing the inner region A20 of the edges of the second substrate W2.

[0248] Furthermore, the illustrated embodiment shows an example of a first region A31 and a second region A35 being alternately disposed along the edge of the second substrate W2, but this disclosure is not limited thereto, and the size and position of the regions are not limited to the examples in the drawings.

[0249] Other examples of modifications will be illustrated below with reference to the accompanying drawings.

[0250] Figure 28 This is a diagram illustrating the lower module according to some embodiments of the present disclosure.

[0251] refer to Figure 28 In the same or similar manner as described above, the lower module 100 may include a first chuck 110 and a deformable plate 140.

[0252] On the other hand, the auxiliary support unit 130 can be omitted in the lower module 100. Therefore, without the operation of the auxiliary support unit 130, the shape of the deformable plate 140 may be deformed due to the pressure of the main support member 120.

[0253] However, since this disclosure can also be embodied by combining at least one example embodiment with known technology, in the lower module 100, the deformable plate 140 can be deformed by the main support 120 without the auxiliary support unit 130, to discharge fluid from the auxiliary pipeline L4 of the second embodiment, and deformation of the deformable plate 140 due to the vacuum atmosphere can be induced.

[0254] In other words, the auxiliary support unit 130 can be omitted, and the shape of the deformable plate 140 can be deformed by the main support 120, the auxiliary pipeline L4, and the second fluid regulator.

[0255] The substrate bonding apparatus of this embodiment can improve precision limits and precisely adjust alignment accuracy to improve chip yield.

[0256] Although exemplary embodiments of the present disclosure have been described above with reference to the accompanying drawings, the present disclosure is not limited to the above embodiments and may be embodied in other specific forms without changing the technical spirit or essential features of the present disclosure. Therefore, the above embodiments should be regarded as illustrative rather than restrictive in all respects.

Claims

1. A substrate bonding apparatus, comprising: The first chuck has a diameter larger than that of the first substrate; A deformable plate is configured to support the first substrate and is configured to have a variable shape on the first chuck; as well as The deformation unit is located between the first chuck and the deformation plate. The deformation unit includes a main support member, which is deformable to compress the deformation plate, and the main support member has a closed curve shape with a central penetration.

2. The substrate bonding apparatus according to claim 1, further comprising: The clamping unit is configured to constrain the deformable plate to prevent it from detaching from the first chuck. The clamping unit includes: The first ring is disposed on the opposite side of the deformable plate on the first chuck; The second ring is disposed on the opposite side of the deformable plate on the first chuck; and A coupling element is coupled to the first ring and the second ring.

3. The substrate bonding apparatus according to claim 2, in, The coupling element includes a bolt that penetrates the deformable plate without being bolted to the deformable plate, and is tightened into at least one of the first ring or the second ring.

4. The substrate bonding apparatus according to claim 1, in, The first chuck includes rib units configured to support the deformable plate, and The rib unit includes a cylindrical first rib with an open top located at the center portion of the main support and inside the main support.

5. The substrate bonding apparatus according to claim 4, in, The rib unit also includes a second rib outside the main support member, and The second rib includes: The lower rib is located on the first chuck; and The upper rib is located on the deformable plate and the lower rib, and has a diameter larger than that of the lower rib.

6. The substrate bonding apparatus according to claim 1, in, The first chuck includes a sensor unit configured to detect the height of the deformable plate, and The sensor unit includes: The first sensor is located at the center of the main support member; The first objective is to provide a sensing surface for the first sensor at the central portion of the deformable plate; The second sensor is located at a position opposite the edge of the first substrate and outside the main support member; and The second objective is to provide a sensing surface for the second sensor on the deformable plate.

7. The substrate bonding apparatus according to claim 1, further comprising: A second fluid regulator is configured to apply negative pressure to the space between the first chuck and the deformation plate, the space being the external space of the deformation unit.

8. The substrate bonding apparatus according to claim 1, in, The deformation unit also includes an auxiliary support unit outside the main support member, and the height of the auxiliary support unit can be adjusted, or the volume of the auxiliary support unit can be changed by the inflow and outflow of fluid.

9. The substrate bonding apparatus according to claim 8, in, The auxiliary support unit includes a first dome located at the edge region of the first substrate.

10. The substrate bonding apparatus according to claim 9, in, The auxiliary support unit includes a second dome, which is opposite to the edge of the first substrate or located outside the edge of the first substrate.

11. The substrate bonding apparatus according to claim 8, in, The auxiliary support unit is configured to compress the deformable plate in an upward direction in response to applying positive pressure to the auxiliary support unit, or The auxiliary support unit is configured to pull the deformable plate downward or reduce the supporting force for supporting the deformable plate in response to providing negative pressure to the auxiliary support unit.

12. The substrate bonding apparatus according to claim 1, in, The main support is configured to have a variable volume due to the inflow and outflow of fluid.

13. The substrate bonding apparatus according to claim 12, in, The main support includes a first expander whose volume expands or contracts.

14. The substrate bonding apparatus according to claim 13, in, The main support component also includes a first base, which is located on the first chuck and has a hollow portion therein. When fluid is supplied from the first fluid regulator to the first expander, the upper end of the expansion plate extending from the upper part of the first substrate is squeezed due to volume expansion, and when the fluid is recovered by the first fluid regulator or the fluid is discharged to the outside, the first expander is at least partially folded and stored in the hollow portion of the first substrate due to volume reduction.

15. The substrate bonding apparatus according to claim 1, in, The deformable plate has a thinner thickness at the edge region than at the center or middle region.

16. The substrate bonding apparatus according to claim 15, in, The face of the deformable plate facing the first chuck includes an inclined surface, which is at least partially inclined relative to the horizontal plane in the edge region. The deformable plate has steps formed between the central portion and the edge region.

17. The substrate bonding apparatus according to claim 15, in, The deformable plate has different thicknesses in the regions divided along the circumferential direction.

18. The substrate bonding apparatus according to claim 1, further comprising: The second chuck is configured to support a second substrate opposite to the first substrate.

19. The substrate bonding apparatus according to claim 18, in, The second chuck includes alternating first and second regions along the edge of the second substrate, and The second chuck vacuum-adsorbs the second substrate in the first region, but does not vacuum-adsorb the second substrate in the second region.

20. A substrate bonding apparatus, comprising: The lower module includes a first chuck, the first chuck having a diameter larger than that of the first substrate; as well as The upper module includes a second chuck configured to support a second substrate opposite to the first substrate. The lower module includes: A deformable plate is configured to support the first substrate. The deformable plate is above the first chuck and is configured to have a variable shape. The thickness of the edge region of the deformable plate is thinner than the thickness of the central or middle region of the deformable plate, and the lower surface of the edge region includes an inclined surface that is inclined upward relative to the horizontal plane. A deformation unit is located between the first chuck and the deformation plate; A clamping unit is configured to constrain the deformable plate to prevent it from detaching from the first chuck. A cylindrical first rib is located at the center of the deformable unit and has an open top; The first sensor is located at the central portion of the deformable unit and at the first rib; and The first objective is located at the central portion on the lower surface of the deformable plate and defines the sensing surface of the first sensor. The deformation unit includes: The main support member has an annular shape and an expandable volume in response to the compression of the deformable plate by fluid supplied from the first fluid regulator; and An auxiliary support unit, located outside the main support member, has a variable volume due to the inflow and outflow of fluid supplied from a compressor that either compresses the deformable plate upward by providing positive pressure or pulls it downward by providing negative pressure via a vacuum pump. The clamping unit includes: The first ring is located below the first chuck; The second ring is located above the deformable plate; and A bolt is coupled to the first ring and the second ring, and penetrates the deformable plate and the first chuck, but is not bolted to the deformable plate and the first chuck.

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