Monitoring system applied to semiconductor device and semiconductor device

Abstract

A monitoring system applied to a semiconductor device and the semiconductor device, the semiconductor device comprising a light source, the monitoring system comprising: a light guide element for transmitting a light beam emitted by the light source, the light guide element having an input end for receiving the light beam and an output end; the photoelectric detector is provided with a detection port, the detection port is connected with the output end of the light guide element, and the photoelectric detector is used for converting an optical signal from the light guide element into an electric signal; the processing device is used for obtaining optical parameters of the light source based on the electric signals. The light guide element is favorable for restraining light in the light transmission process, so that light loss is reduced, and the accuracy of light parameters is correspondingly improved; the processing device obtains the optical parameter of the light source based on the electric signal generated by the photoelectric detector, thereby facilitating real-time monitoring of the optical parameter of the light source, facilitating timely adjustment of the optical parameter by a worker according to a process requirement, and facilitating improvement of the reliability of semiconductor equipment.

Description

Technical Field

[0001] This disclosure relates to the semiconductor field, and more particularly to a monitoring system and semiconductor device for use in semiconductor equipment. Background Technology

[0002] In the semiconductor manufacturing field, high-precision light sources (such as ultraviolet light, lasers, and visible light) are core components of semiconductor equipment. For example, lithography machines require stable ultraviolet exposure intensity, and baking equipment relies on specific wavelength irradiance control.

[0003] Fluctuations in the light parameters of a light source directly affect product yield. For example, insufficient light intensity can lead to incomplete reactions, while excessive light intensity can cause material damage. Therefore, monitoring the light parameters of the light source in semiconductor devices has become an urgent problem to be solved. Summary of the Invention

[0004] The problem addressed by the embodiments of this disclosure is to provide a monitoring system and semiconductor device for use in semiconductor devices, enabling real-time monitoring of the light source of the semiconductor device.

[0005] To address the aforementioned problems, this disclosure provides a monitoring system for a semiconductor device, the semiconductor device including a light source, and the monitoring system including: a light guide element for transmitting a light beam emitted by the light source, the light guide element having an input end and an output end, the input end for receiving the light beam; a photodetector having a detection port connected to the output end of the light guide element, the photodetector for converting the optical signal from the light guide element into an electrical signal; and a processing device for obtaining the optical parameters of the light source based on the electrical signal.

[0006] Optionally, the light guide element includes a sapphire light guide element.

[0007] Optionally, the shape of the light guide element may include a columnar shape.

[0008] Optionally, the light source includes an ultraviolet light source, and the photodetector corresponding to the ultraviolet light source is an ultraviolet sensor.

[0009] Optionally, the ultraviolet sensor includes a silicon carbide-based ultraviolet photodiode.

[0010] Optionally, the monitoring system further includes an amplifier electrically connected to the photodetector, the amplifier being used to amplify the electrical signal output by the photodetector; the processing device is used to receive and process the electrical signal output by the amplifier to obtain the optical parameters of the light source.

[0011] Accordingly, embodiments of this disclosure also provide a semiconductor device, including: a light source for emitting a light beam; and a monitoring system according to any embodiment of this disclosure for monitoring the light parameters of the light source.

[0012] Optionally, the semiconductor device further includes: a chamber; the light source for providing illumination to the chamber; the light guide element includes: a built-in portion disposed inside the chamber, the built-in portion having the input terminal; an external portion disposed outside the chamber, the external portion having the output terminal; and a photodetector disposed outside the chamber and connected to the output terminal of the external portion.

[0013] Optionally, the semiconductor device further includes a fixing device, which is disposed outside the cavity and fixedly connected to the outer wall of the cavity, and is used to fix the light guide element.

[0014] Optionally, the fixing device includes: a support member, one end of which is fixedly connected to the outer wall of the chamber for fixing the fixing device on the outer wall of the chamber; a positioning nut, which is fixedly connected to the other end of the support member, the positioning nut being sleeved on the outer wall of the external part of the light guide element, the positioning nut having an opening that penetrates the side wall of the positioning nut, the inner wall of the opening having a threaded structure; and a bolt, the shank of which engages with the threaded structure of the opening, and one end of the shank abuts against the outer wall of the external part.

[0015] Optionally, the semiconductor device further includes a chamber and a wafer transfer port penetrating the sidewall of the chamber, the wafer transfer port being used for the wafer to enter and exit the chamber; the light source being used to provide illumination conditions for the chamber; inside the chamber, the light guide element is disposed away from the wafer transfer port.

[0016] Optionally, the semiconductor device further includes: a chamber; a chuck disposed inside the chamber, the chuck being used to carry a wafer, and the chuck including a wafer carrying surface; a light source for illuminating the wafer on the wafer carrying surface; and an input end of a light guide element disposed beside the chuck, and the input end of the light guide element and the wafer carrying surface of the chuck having the same orientation in the chamber.

[0017] Optionally, the input end of the light guide element is higher than the wafer support surface.

[0018] Optionally, inside the cavity, in a direction parallel to the wafer bearing surface, there is a gap between the edge of the light guide element and the edge of the chuck.

[0019] Optionally, the semiconductor device includes an ultraviolet baking device.

[0020] Compared with the prior art, the technical solution of the present disclosure has the following advantages:

[0021] The monitoring system for semiconductor devices with a light source provided in this embodiment includes: a light guide element for transmitting a light beam emitted by the light source, the light guide element having an input end and an output end, the input end for receiving the light beam; a photodetector having a detection port connected to the output end of the light guide element, the photodetector for converting the optical signal from the light guide element into an electrical signal; and a processing device for obtaining the optical parameters of the light source based on the electrical signal. In this embodiment, the light guide element helps to constrain the light during transmission, thereby reducing light loss and improving the accuracy of the optical parameters. The processing device obtains the optical parameters of the light source based on the electrical signal generated by the photodetector, which facilitates real-time monitoring of the light source's optical parameters, allowing operators to adjust the optical parameters promptly according to process requirements, thereby improving the reliability of the semiconductor device.

[0022] Accordingly, this disclosure provides a semiconductor device, which includes: a light source for emitting a light beam; and the monitoring system described in this disclosure. Because this monitoring system can accurately monitor the light parameters of the light source in real time, it facilitates timely adjustment of the light parameters by operators according to process requirements, thereby improving the product yield of the semiconductor device. Attached Figure Description

[0023] Figure 1 This is a functional block diagram of a monitoring system according to an embodiment of the present invention;

[0024] Figure 2 This is a schematic diagram of the structure of a semiconductor device according to an embodiment of the present invention;

[0025] Figure 3 This is a bottom view of a semiconductor device according to an embodiment of the present invention at the bottom of the chamber;

[0026] Figure 4 This is a cross-sectional view of a fixing device in a semiconductor device according to an embodiment of the present invention. Detailed Implementation

[0027] As the background technology shows, how to monitor the optical parameters of the light source of semiconductor devices has become an urgent problem to be solved.

[0028] To address the aforementioned problems, this disclosure provides a monitoring system for a semiconductor device with a light source, comprising: a light guide element for transmitting a light beam emitted by the light source, the light guide element having an input end and an output end, the input end being used to receive the light beam; a photodetector having a detection port connected to the output end of the light guide element, the photodetector being used to convert the optical signal from the light guide element into an electrical signal; and a processing device for obtaining optical parameters of the light source based on the electrical signal.

[0029] In this embodiment, the light guide element helps to constrain the light during the transmission process, thereby reducing light loss and improving the accuracy of the light parameters. The processing device obtains the light parameters of the light source based on the electrical signal generated by the photodetector, which is conducive to real-time monitoring of the light source light parameters. This allows the staff to adjust the light parameters in a timely manner according to process requirements, thereby improving the reliability of semiconductor equipment.

[0030] To make the above-mentioned objects, features and advantages of the embodiments of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0031] Figure 1 This is a functional block diagram of a monitoring system for a semiconductor device with a light source, according to an embodiment of the present invention.

[0032] Reference Figure 2 , Figure 2 This is a schematic diagram of the structure of a semiconductor device according to an embodiment of the present invention. The following description uses a semiconductor device containing the monitoring system as an example.

[0033] In some embodiments, a monitoring system 100 applied to a semiconductor device having a light source 15 includes: a light guide element 10 for transmitting a light beam emitted by the light source 15, the light guide element 10 having an input terminal 111 (e.g., ...). Figure 2 (as shown) and output terminal 121 (as shown) Figure 2 As shown in the figure, the input terminal 111 is used to receive and transmit the light beam emitted by the light source 15; the photodetector 20 has a detection port (not shown in the figure), the detection port is connected to the output terminal 121 of the light guide element 10, and the photodetector 20 is used to convert the light signal from the light guide element 10 into an electrical signal; the processing device 40 is used to obtain the light parameters of the light source based on the electrical signal.

[0034] In this embodiment, the light guide element 10 helps to constrain the light during the transmission process, thereby reducing light loss and improving the accuracy of the light parameters. The processing device 40 obtains the light parameters of the light source based on the electrical signal generated by the photodetector, which is conducive to real-time monitoring of the light parameters of the light source. This allows the staff to adjust the light parameters in a timely manner according to the process requirements, thereby improving the reliability of the semiconductor equipment.

[0035] It should be noted that the light guide element 10 can also reduce the limitation on the setting position of the photodetector 20. In other words, the light guide element 10 can extend the light-collecting path of the photodetector 20, so that the position of the photodetector 20 can be set according to actual needs.

[0036] It should also be noted that in semiconductor processes, such as baking processes, the light source 15 uses a high-power ultraviolet light source. After receiving the light beam emitted by the light source 15, the light guide element 10 transmits the light beam to the photodetector 20, avoiding the direct illumination of the photodetector 20 by the light beam emitted by the light source 15. This effectively suppresses the problem of reduced measurement accuracy and structural damage to the photodetector 20 caused by the local high temperature generated by the direct ultraviolet light source, thereby improving the measurement accuracy and reliability of the monitoring system 100.

[0037] In this embodiment, the light guide element 10 includes a sapphire light guide element.

[0038] The sapphire light guide element, made of sapphire, has good light transmittance, effectively suppressing beam loss during transmission and improving the accuracy of light intensity monitoring in the monitoring system 100. Furthermore, the sapphire light guide element exhibits good light transmittance in ultraviolet, visible, and infrared light environments, expanding the application range of the monitoring system 100 and enhancing its versatility. In addition, the sapphire light guide element possesses high temperature resistance, high hardness, and resistance to acid and alkali corrosion, ensuring stable performance and structure in high-temperature and acid / alkali environments, thus improving the reliability of the light guide element 10. In other embodiments, the light guide element may also be made of special optical glass or quartz fiber material.

[0039] In this embodiment, the light guide element 10 has a columnar shape.

[0040] The light guide element 10 adopts a columnar structure, which helps to improve the uniformity of light collection. Furthermore, the columnar structure facilitates the light guide element 10's passage through the outer wall of the cavity, making it easier to fix the light guide element 10 and seal the area where it passes through the outer wall. In other embodiments, the light guide element can also be a flat plate or a spiral structure.

[0041] The photodetector 20 is used to convert the optical signal output by the light guide element 10 into an electrical signal.

[0042] The photodetector 20 outputs an electrical signal, which is processed by other components of the monitoring system 100. This makes it easier to display the light parameters of the light source more intuitively and improves the convenience of the monitoring system 100.

[0043] As an example, the light source 15 includes an ultraviolet light source, and the photodetector 20 corresponding to the ultraviolet light source is an ultraviolet sensor. Using the ultraviolet sensor allows the photodetector 20 to have high ultraviolet transmittance, which is beneficial for improving the effective conversion rate of the photodetector 20 for ultraviolet photons, thereby improving the efficiency of the photodetector 20 in converting optical signals into electrical signals. Furthermore, using the ultraviolet sensor helps improve the spectral matching between the photodetector 20 and the ultraviolet light source, correspondingly improving the applicability and performance of the photodetector 20.

[0044] In other embodiments, when the light source is another type of light source, the photodetector may also be another type of device. For example, when the light source is an infrared light source, the photodetector may be a silicon photodiode.

[0045] In this embodiment, the ultraviolet sensor includes a silicon carbide-based ultraviolet photodiode.

[0046] The light source is an ultraviolet (UV) light source. During UV light transmission and reception by the photodetector 20, high temperatures are generated. The silicon carbide-based UV photodiode operates within a temperature range of -55°C to +200°C, which improves the photodetector 20's tolerance to high-temperature environments, effectively suppresses interference from high temperatures on its performance, and enhances its reliability. The silicon carbide-based UV photodiode operates with a wavelength range of 220 nm to 350 nm, while the light source is a UV light source with a wavelength range of 280 nm to 320 nm. The photodetector 20's operating wavelength range covers the UV light source's wavelength range, ensuring that the photodetector 20 can receive and convert UV light beams at any wavelength, thus improving its light absorption rate and consequently enhancing the reliability of the monitoring system 100. In other embodiments, the light source is a UV light source, and the UV sensor can also be a gallium nitride-based UV sensor or a gallium oxide-based UV sensor.

[0047] In this embodiment, the monitoring system 100 further includes an amplifier 30, which is electrically connected to the photodetector 20 and is used to amplify the electrical signal output by the photodetector 20.

[0048] The photosensitive material in the photodetector 20 receives ultraviolet radiation of a specific wavelength band from the ultraviolet light source, forming an electrical signal. The amplifier 30 amplifies the relatively weak electrical signal output by the photodetector 20, converting it into an electrical signal proportional to the optical parameters of the ultraviolet light source. This facilitates the detection, processing, and quantization of the electrical signal by the signal processing circuit, thereby improving the measurement accuracy and resolution of the monitoring system 100. Furthermore, the amplifier 30 helps improve the signal-to-noise ratio of the monitoring system 100, which in turn improves the working performance of the monitoring system 100.

[0049] In some embodiments, the amplifier 30 is a signal amplification circuit.

[0050] In this embodiment, the processing device 40 is used to receive and process the electrical signal output by the amplifier 30 to obtain the optical parameters of the light source 15.

[0051] The electrical signal is amplified by the amplifier 30 and then transmitted to the processing device 40, which helps to improve the accuracy of the optical parameters obtained by the processing device 40 based on the electrical signal.

[0052] As an example, the processing device 40 is a programmable logic controller (PLC).

[0053] In this embodiment, the light parameter is the light intensity value.

[0054] It should be noted that the light intensity value is used to represent the radiation power emitted by the light source 15 within a unit solid angle in a specific direction. By multiplying the detected light intensity value by the detection time, it is easy to obtain the total energy value representing the light radiation emitted by the light source 15. This is beneficial for quantifying the light intensity of the light source 15 and for staff to make timely adjustments to the light intensity of the light source 15 according to process requirements, thereby helping to optimize the process effect.

[0055] In some embodiments, the processing device 40 is coupled to a display device (e.g., a machine computer) to display the values ​​of the optical parameters to the user via the display device.

[0056] It should be noted that in some embodiments, the monitoring system is integrated into a semiconductor device. In other embodiments, the monitoring system may be independent of the semiconductor device containing the light source.

[0057] It should also be noted that, in some embodiments, the monitoring system is applied to an ultraviolet baking device used for heating and baking wafers. In other embodiments, the monitoring system is applied to other semiconductor devices with a light source.

[0058] refer to Figure 2 and in conjunction with references Figure 1 Accordingly, embodiments of the present invention provide a semiconductor device, the semiconductor device including: a light source 15 for emitting a light beam; and the monitoring system 100 described in embodiments of the present invention (such as...). Figure 1 As shown in the figure, it is used to monitor the optical parameters of the light source 15.

[0059] In this embodiment, since the monitoring system 100 can accurately monitor the light parameters of the light source 15 in real time, it is beneficial to improve the product yield of the semiconductor equipment.

[0060] For a detailed description of the monitoring system 100, please refer to the relevant content in the foregoing embodiments, which will not be repeated here.

[0061] In this embodiment, the semiconductor device is an ultraviolet baking device, which is used to heat and bake the wafer.

[0062] In other embodiments, the semiconductor device may also be other devices with a light source.

[0063] In the baking process, the specific wavelength of the ultraviolet light has the characteristic of being easily and efficiently absorbed, which helps to shorten the baking time, increase the curing speed, and thus improve the working efficiency of the semiconductor equipment. The ultraviolet light source has no thermal inertia, which can be turned on instantly to reach maximum power and turned off instantly to stop curing. Moreover, the ultraviolet light source can be focused, which helps to achieve precise control of curing time and curing position, which helps to improve the curing effect of the semiconductor equipment. Furthermore, the ultraviolet light source has the characteristics of long service life and low energy consumption, which helps to improve the service life and reliability of the semiconductor equipment.

[0064] It should be noted that, depending on different process requirements, the light source 15 can be selected to emit ultraviolet light of a specific wavelength. For example, the wavelength of the light source 15 may include 280nm or 320nm.

[0065] refer to Figure 2 In this embodiment, the semiconductor device further includes a chamber 50; the light source 15 is used to provide illumination for the chamber 50.

[0066] The chamber 50 is used to provide a process environment for a specific process. In this embodiment, the chamber 50 is also used to provide space for the installation of at least some components of the monitoring system.

[0067] As an example, the light source 15 is disposed at the top of the chamber 50 to facilitate the illumination of the wafer located in the chamber 50 by the light source 15.

[0068] In this embodiment, the semiconductor device further includes a wafer transfer port 51 that penetrates the side wall of the chamber 50, the wafer transfer port 51 being used for allowing wafers to enter and exit the chamber 50.

[0069] refer to Figure 2 The wafer transfer port 51 is located on the side wall of the chamber 50, which facilitates the horizontal entry and exit of the wafer into and out of the chamber 50, thereby reducing the difficulty of the wafer entering and exiting the chamber 50. In other embodiments, the wafer transfer port may also be located at the top of the chamber, and the wafer enters and exits the chamber by vertical lifting.

[0070] In this embodiment, the light guide element 10 is used to receive and transmit the light beam emitted by the light source 15.

[0071] In this embodiment, the light guide element 10 is positioned inside the cavity 50, avoiding the wafer transmission port 51.

[0072] refer to Figure 2As an example, the light guide element 10 is disposed on the bottom surface of the cavity 50, near any corner of the cavity 50, and away from the wafer transfer port 51.

[0073] It should be noted that the wafer transfer port 51 is disposed through the side wall of the cavity 50, and a transfer path for the wafer to enter and exit is formed in the cavity 50 accordingly. The light guide element 10 is disposed to avoid the transfer path, so as to avoid the light guide element 10 from blocking the transfer path of the wafer entering and exiting the cavity 50, effectively suppressing the obstruction of the wafer entering and exiting the cavity 50, thereby improving the structural rationality of the semiconductor device.

[0074] In this embodiment, the light guide element 10 includes: a built-in part 11 disposed inside the cavity 50, the built-in part 11 having the input terminal 111; and an external part 12 disposed outside the cavity 50, the external part 12 having the output terminal 121; correspondingly, the photodetector 20 is disposed outside the cavity 50 and connected to the output terminal 121 of the external part 12.

[0075] By placing a portion of the light guide element 10 outside the cavity 50, it is beneficial to improve the utilization rate of the internal space of the cavity 50 and to facilitate the placement of the photodetector 20 outside the cavity 50. The placement of the photodetector 20 outside the cavity 50 helps to reduce the interference of the internal environment of the cavity 50 on the photodetector 20, and helps to improve the service life and reliability of the photodetector 20, thereby improving the reliability of the semiconductor device.

[0076] The input terminal 111 of the built-in part 11 is used to receive the light beam emitted by the light source 15. By placing a part of the light guide element 10 inside the cavity 50, it is beneficial to shorten the distance of the light beam from the light source 15 to the input terminal 111, and reduce the dissipation and loss of the light beam before it is received by the input terminal 111. In addition, the cavity 50 can provide a relatively closed environment for the process of the input terminal 111 receiving the light beam, reduce the interference of external light sources on the process of the input terminal 111 receiving the light beam, and effectively suppress the light beam jitter or drift caused by changes in the air refractive index due to changes in the external environment (such as airflow). This is beneficial to improving the efficiency of the input terminal 111 in receiving the light beam emitted by the light source 15, and thus improving the reliability of the semiconductor device.

[0077] Specifically, the light guide element 10 extends from the bottom of the cavity 50, so that the external portion 12 is disposed outside the cavity 50. Compared to the top and sides of the cavity 50, the bottom of the cavity 50 has fewer other process-related components, which helps the light guide element 10 avoid other components and effectively suppresses interference from the placement of the light guide element 10 to other components within the cavity 50. In this embodiment, the wafer transfer port 51 is disposed through the side wall of the cavity 50, and the light guide element 10 extends from the bottom of the cavity 50, which helps reduce the difficulty of placing the light guide element 10 to avoid the wafer transfer port 51. In other embodiments, the light guide element may also extend from the side wall or top of the cavity.

[0078] It should be noted that the length of the external portion 12 of the light guide element 10 should not be too large, so as to effectively suppress the light beam emitted by the light source 15 from radiating to other positions outside the detection port of the photodetector 20 through the excessively long external portion 12, which is beneficial to improving the light source utilization rate of the light source 15.

[0079] In this embodiment, the semiconductor device further includes a chuck 60 disposed inside the chamber 50. The chuck 60 is used to carry a wafer and includes a wafer carrying surface 61. Correspondingly, the light source 15 is used to illuminate the wafer on the wafer carrying surface 61 of the chuck 60.

[0080] When the chuck 60 carries the wafer, the wafer is located on the wafer carrying surface 61.

[0081] refer to Figure 2 As an example, the chuck 60 is positioned directly below the light source 15, which helps improve the integrity of the beam emitted by the light source 15 covering the wafer. In other embodiments, the chuck and the light source may have other relative positions.

[0082] In this embodiment, the input end 111 of the light guide element 10 is disposed on the side of the chuck 60, and the input end 111 and the wafer bearing surface 61 have the same orientation in the cavity 50, so that the light beam intensity received by the input end 111 is closer to the light intensity of the wafer surface carried by the chuck 60, which is beneficial to improving the measurement accuracy of the monitoring system, thereby improving the reliability of the semiconductor device.

[0083] In this embodiment, the input terminal 111 of the light guide element 10 is positioned horizontally higher than the wafer support surface 61. When a wafer is placed on the wafer support surface 61, the wafer has a certain thickness. Figure 2(The image uses a dashed box to represent the wafer). This design facilitates ensuring that the horizontal height of the input terminal 111 of the light guide element 10 is close to the height of the wafer's surface facing the light source 15. This makes the light intensity received by the input terminal 111 of the light guide element 10 closer to the light intensity of the wafer's surface facing the light source 15. This improves the measurement accuracy of the monitoring system for the light intensity illuminating the wafer surface, thereby enhancing the monitoring accuracy of the light source 15 of the semiconductor device.

[0084] In this embodiment, the height difference between the input terminal 111 of the light guide element 10 and the wafer support surface 61 is 0.5 mm to 1 mm.

[0085] The thickness of a single wafer typically ranges from 0.5 mm to 1 mm. Setting the height difference between the input end 111 of the light guide element 10 and the wafer support surface 61 to 0.5 mm to 1 mm helps to minimize the difference between the horizontal height of the input end 111 of the light guide element 10 and the height of the wafer surface facing the light source 15. This minimizes the difference between the light intensity received by the input end 111 of the light guide element 10 and the light intensity of the wafer surface facing the light source 15, further improving the measurement accuracy of the light intensity illuminating the wafer surface by the monitoring system, and thus further improving the monitoring accuracy of the light source 15 of the semiconductor device.

[0086] In this embodiment, inside the chamber 50, in a direction parallel to the wafer support surface 61, there is a gap between the edge of the light guide element 10 and the edge of the chuck 60, thereby reducing the risk of the light guide element 10 rubbing against the chuck 60.

[0087] In some embodiments, the minimum distance between the edge of the input end 111 of the light guide element 10 and the edge of the chuck 60 is 1 mm to 5 mm.

[0088] It should be noted that the minimum distance is the straight-line distance from the point on the edge of the input terminal 111 closest to the chuck 60 to the point on the edge of the chuck 60 closest to the input terminal 111.

[0089] If the minimum distance between the edge of the input terminal 111 and the edge of the chuck 60 is less than 1 mm, the input terminal 111 may come into contact with the chuck 60 during rotation or lifting, causing scraping and other accidents that interfere with the wafer fabrication process. If the minimum distance between the edge of the input terminal 111 and the edge of the chuck 60 is greater than 5 mm, the distance between the input terminal 111 and the wafer support surface 61 will be too far, potentially leading to a large difference between the light intensity received by the input terminal 111 and the light intensity on the wafer surface, thus reducing the accuracy of the monitoring system in measuring the light intensity on the wafer surface. Therefore, the minimum distance between the edge of the input terminal 111 and the edge of the wafer support surface 61 should be between 1 mm and 5 mm.

[0090] In this embodiment, the semiconductor device further includes a fixing device 70, which is disposed outside the cavity 50 and fixedly connected to the outer wall of the cavity 50. The fixing device 70 is used to fix the light guide element.

[0091] The fixing device 70 is used to fix the light guide element 10.

[0092] The fixing device 70 is in direct contact with the external portion 12 of the light guide element 10, fixing the light guide element 10 and effectively suppressing accidental displacement of the light guide element 10. This, in turn, suppresses accidental offset of the input terminal 111, thereby improving the measurement accuracy of the light intensity of the monitoring system and consequently enhancing the reliability of the semiconductor device. In other embodiments, the fixing device may also be disposed inside the cavity, directly contacting the internal portion of the light guide element.

[0093] refer to Figures 3 to 4 As an example, the fixing device 70 includes a bolt and nut structure.

[0094] The fixing device 70 includes: a support component 71 (such as...). Figure 2 and Figure 3 As shown, one end of the support member 71 is fixedly connected to the outer wall of the chamber 50 to fix the fixing device 70 on the outer wall of the chamber 50; the positioning nut 72 is fixedly connected to the other end of the support member 71, the positioning nut 72 is sleeved on the outer wall of the external part 12 of the light guide element 10, the positioning nut 72 has an opening 74, the opening 74 penetrates the side wall of the positioning nut 72, and the inner wall of the opening 74 has a threaded structure 741; the bolt 75 has a shank 751 that engages with the threaded structure 741 of the opening 74, and one end of the shank 751 abuts against the outer wall of the external part 12.

[0095] In this embodiment, the bolt 75 is threaded into the opening 74, so that one end of the bolt 75 abuts against the outer wall of the external part 12, thereby fixing the light guide element 10, effectively suppressing the unexpected displacement of the light guide element 10, and correspondingly suppressing the unexpected offset of the input end 111, thereby improving the measurement accuracy of the light intensity of the monitoring system and thus improving the reliability of the semiconductor device.

[0096] Specifically, the positioning nut 72 has a limiting hole 73, through which the light guide element 10 passes, thereby allowing the positioning nut 72 to be sleeved on the outer wall of the light guide element 10.

[0097] In this embodiment, the semiconductor device further includes a heating device for heating the wafer.

[0098] The heating device can effectively suppress the excessively rapid temperature change of the wafer caused by the irradiation of the light source 15, reduce the probability of the wafer cracking, and thus improve the reliability of the semiconductor device.

[0099] As an example, the heating device is the chuck 60 with heating function, and the chuck 60 has uniformly distributed heating lines, which is beneficial to improving the heating uniformity of the wafer.

[0100] In this embodiment, the semiconductor device includes an ultraviolet baking device.

[0101] As an example, the ultraviolet baking equipment is an oxygen-free oven. In other embodiments, the ultraviolet baking equipment may also be a UV drying device or a UV heat treatment machine.

[0102] While the above disclosure is provided, it is not limited thereto. Any person skilled in the art may make various alterations and modifications without departing from the spirit and scope of this disclosure; therefore, the scope of protection of this disclosure shall be determined by the scope defined in the claims.

Claims

1. A monitoring system for semiconductor devices, the semiconductor devices comprising a light source, characterized in that, The monitoring system includes: A light guide element is used to transmit the light beam emitted by the light source. The light guide element has an input end and an output end, and the input end is used to receive the light beam. A photodetector having a detection port connected to the output end of the light guide element, the photodetector being used to convert optical signals from the light guide element into electrical signals; A processing device for obtaining the optical parameters of the light source based on the electrical signal.

2. The monitoring system as described in claim 1, characterized in that, The light guide element includes a sapphire light guide element.

3. The monitoring system as described in claim 1, characterized in that, The shape of the light guide element includes a columnar shape.

4. The monitoring system as described in claim 1, characterized in that, The light source includes an ultraviolet light source, and the photodetector corresponding to the ultraviolet light source is an ultraviolet sensor.

5. The monitoring system as described in claim 4, characterized in that, The ultraviolet sensor includes a silicon carbide-based ultraviolet photodiode.

6. The monitoring system according to any one of claims 1-5, characterized in that, The monitoring system also includes an amplifier, which is electrically connected to the photodetector and is used to amplify the electrical signal output by the photodetector. The processing device is used to receive and process the electrical signal output by the amplifier to obtain the optical parameters of the light source.

7. A semiconductor device, characterized in that, include: A light source, used to emit light beams; The monitoring system according to any one of claims 1 to 6 is used to monitor the light parameters of the light source.

8. The semiconductor device as claimed in claim 7, characterized in that, The semiconductor device further includes a chamber; the light source is used to provide illumination to the chamber. The light guide element includes: a built-in portion disposed inside the cavity, the built-in portion having the input terminal; and an external portion disposed outside the cavity, the external portion having the output terminal. The photodetector is disposed outside the cavity and connected to the output terminal of the external part.

9. The semiconductor device as claimed in claim 8, characterized in that, The semiconductor device further includes a fixing device, which is disposed outside the cavity and fixedly connected to the outer wall of the cavity, and is used to fix the light guide element.

10. The semiconductor device as claimed in claim 9, characterized in that, The fixing device includes: A support component, one end of which is fixedly connected to the outer wall of the chamber, for fixing the fixing device on the outer wall of the chamber; A positioning nut is fixedly connected to the other end of the support component. The positioning nut is sleeved on the outer wall of the outer part of the light guide element. The positioning nut has an opening that penetrates the side wall of the positioning nut. The inner wall of the opening has a threaded structure. A bolt, wherein the shank of the bolt engages with the threaded structure of the opening, and one end of the shank abuts against the outer wall of the external part.

11. The semiconductor device as claimed in claim 7, characterized in that, The semiconductor device further includes a chamber and a wafer transfer port penetrating the sidewall of the chamber, the wafer transfer port being used for allowing wafers to enter and exit the chamber; The light source is used to provide illumination for the chamber; Inside the cavity, the light guide element is positioned away from the wafer transmission port.

12. The semiconductor device as claimed in claim 7, characterized in that, The semiconductor device further includes: a chamber; a chuck disposed inside the chamber, the chuck being used to carry a wafer, and the chuck including a wafer carrying surface; The light source is used to illuminate the wafer on the wafer carrier surface; The input end of the light guide element is located on the side of the chuck, and the input end of the light guide element and the wafer bearing surface of the chuck have the same orientation in the chamber.

13. The semiconductor device as claimed in claim 12, characterized in that, The input end of the light guide element is higher than the wafer support surface.

14. The semiconductor device as claimed in claim 12, characterized in that, Inside the cavity, in a direction parallel to the wafer bearing surface, there is a gap between the edge of the light guide element and the edge of the chuck.

15. The semiconductor device as claimed in claim 7, characterized in that, The semiconductor device includes an ultraviolet baking device.

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