Wafer scanning motion control method and system

Abstract

The application provides a wafer scanning motion control method and system, and belongs to the technical field of semiconductor manufacturing equipment. The method controls the horizontal movement shaft to accelerate to a preset uniform scanning speed and then enter the wafer area scanning, and synchronously executes the vertical movement shaft switching action in the deceleration section of the horizontal movement shaft; if the switching action is not completed, the switching action can be continuously executed in the subsequent acceleration section of the horizontal movement shaft, so as to ensure the time coordination of scanning and line switching. Meanwhile, by dynamically adjusting the scanning speed, the acquisition frequency, adopting the S-shaped acceleration and deceleration curve and the real-time vibration feedback compensation, the wafer different area characteristics are adapted and the scanning stability is ensured. The application can improve the scanning efficiency under the premise of ensuring the detection accuracy, and is suitable for the motion control of high-precision wafer detection equipment.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing equipment, in particular to a wafer scanning motion control method and system. BACKGROUND

[0002] In the field of semiconductor wafer detection, the scanning equipment needs to realize comprehensive scanning of the wafer surface through the coordinated motion of the horizontal translation axis and the vertical translation axis. The motion control precision and efficiency directly affect the detection quality and productivity. In the prior art, the horizontal translation axis scanning and the vertical translation axis line changing are usually controlled in steps, that is, the horizontal translation axis stops moving after completing a line scanning, and then the next line scanning is started after the vertical translation axis completes the line changing. This results in low overall efficiency. Some improved schemes attempt to synchronize the deceleration and line changing actions, but there is a problem of mismatch between the line changing action time of the vertical translation axis and the deceleration time of the horizontal translation axis, which easily causes scanning interruption or vibration interference, affecting the detection precision. In addition, the traditional method uses uniform scanning parameters for different regions of the wafer (such as the edge and center, high-risk area and low-risk area), which is difficult to balance the detection precision and efficiency; at the same time, the vibration during the motion process is not compensated in real time, further limiting the scanning stability. Therefore, there is an urgent need for a motion control method that can realize precise coordination of horizontal and vertical axis motion, adapt to the characteristics of wafer regions, and have dynamic optimization capability. SUMMARY

[0003] The wafer scanning motion control method disclosed by the present application realizes efficient scanning by planning the coordinated motion logic of the horizontal translation axis and the vertical translation axis: the horizontal translation axis is controlled to accelerate from the starting position to a preset constant speed scanning speed based on wafer parameters and equipment performance, and after entering the wafer area, it is scanned at a constant speed. When the horizontal translation axis reaches the deceleration section, the vertical translation axis line changing action is executed synchronously. If the total line changing action time of the vertical translation axis exceeds the deceleration time of the horizontal translation axis, the remaining line changing action is continued to be completed in the acceleration section of the horizontal translation axis of the subsequent line. For the middle lines, the horizontal translation axis enters the constant speed section after the acceleration section (synchronously completing the line changing of the previous line), and the deceleration and line changing actions are executed synchronously in the deceleration section of the current line. After the last line completes the scanning, only the deceleration action is executed to end the process. The method also includes optimization measures such as ensuring that the line changing time of the vertical translation axis matches the deceleration time of the horizontal translation axis through precalculation and dynamic adjustment, dynamically adjusting the acquisition frequency based on wafer region division, using a calibrated S-shaped acceleration and deceleration curve, dynamically adjusting the constant speed scanning speed based on wafer region characteristics (defect risk level, pattern density) and not exceeding the maximum stable running speed, and dynamically adjusting the motion parameters through real-time acquisition of the vibration amount by a vibration sensor, etc. The overall balance between scanning efficiency and precision is realized, and the equipment running stability and adaptability are improved.

[0004] The present application provides a wafer scanning motion control method, comprising the following steps:

[0005] The transverse axis is controlled to accelerate from the starting position to a preset uniform scanning speed, and then enters the wafer area for uniform scanning.

[0006] When the transverse axis reaches the deceleration section outside the wafer area, the longitudinal axis is synchronously controlled to perform a downward switching action;

[0007] If the total time required for the longitudinal axis to complete the swapping action is greater than the deceleration time of the transverse axis after the first row scan, then when the transverse axis starts the acceleration segment movement of the second row of the wafer, the swapping action that the longitudinal axis has not completed will continue to be executed.

[0008] For each row from the second row to the second to last row, the horizontal axis enters the constant speed segment after the acceleration segment for scanning. The acceleration segment must synchronously complete the switching operation that was not completed in the previous row.

[0009] For each row from the second row to the second to last row, when the horizontal axis reaches the deceleration section of that row, the horizontal axis deceleration and vertical axis switching operations are performed simultaneously until the scanning and line changing of that row are completed;

[0010] When the transverse axis performs a scan on the last line, after completing the scan of the last line in the acceleration section to the constant speed section, it only performs a deceleration action when entering the deceleration section, without performing a line change.

[0011] In the wafer scanning motion control method described in this application, the control of the transverse axis accelerating from the starting position to a preset uniform scanning speed specifically includes:

[0012] The preset uniform scanning speed is set based on the wafer diameter parameters, detection accuracy requirements, and motion performance parameters of the scanning equipment.

[0013] The preset uniform scanning speed does not exceed the maximum stable operating speed of the scanning device in the uniform speed range.

[0014] The wafer scanning motion control method described in this application further includes:

[0015] The total time required for the longitudinal axis to complete the transfer motion is determined by pre-calculating the sum of the acceleration time, constant speed time, and deceleration time of the longitudinal axis.

[0016] The deceleration time of the transverse axis is determined by pre-calculating the time it takes for the transverse axis to decelerate from a constant scanning speed to a preset low speed;

[0017] By dynamically adjusting the acceleration parameters of the longitudinal axis, the difference between the total time of the longitudinal axis switching action and the deceleration time of the transverse axis is controlled within a preset threshold.

[0018] In the wafer scanning motion control method described in this application, the step of continuing the unfinished transfer action in the lateral axis acceleration segment of the second row includes:

[0019] The control unit pre-stores the displacement parameters of the acceleration segment of the transverse axis and the remaining displacement parameters of the longitudinal axis;

[0020] The acceleration segment duration is calculated based on the preset acceleration curve of the transverse axis, and the motion curve of the remaining displacement of the longitudinal axis is planned simultaneously.

[0021] Control the longitudinal axis to move along the planned curve, so that the longitudinal axis completes the remaining displacement when the transverse axis reaches the preset uniform scanning speed.

[0022] In the wafer scanning motion control method described in this application, the uniform scanning process of the transverse axis in the wafer region includes:

[0023] The acquisition frequency of the scanning signal is dynamically adjusted according to the preset area division on the wafer surface;

[0024] The preset region division includes an effective detection region and an edge transition region;

[0025] The effective detection area corresponds to a first acquisition frequency, and the edge transition area corresponds to a second acquisition frequency. The first acquisition frequency is greater than the second acquisition frequency.

[0026] The wafer scanning motion control method described in this application further includes:

[0027] The acceleration and deceleration phases of the transverse axis are both controlled by S-shaped acceleration and deceleration curves;

[0028] The acceleration change rate of the S-shaped acceleration / deceleration curve is pre-calibrated based on the inertial parameters of the transverse axis and the stability requirements of wafer scanning.

[0029] The wafer scanning motion control method described in this application further includes:

[0030] After the transverse axis enters the wafer region, the preset uniform scanning speed is dynamically adjusted according to the preset regional characteristics of the wafer and does not exceed the maximum stable operating speed.

[0031] The regional characteristics include the defect risk level and pattern density of each region of the wafer;

[0032] The regions with high defect risk levels or high pattern density correspond to the first uniform scanning speed.

[0033] The regions with low defect risk levels or low pattern density correspond to the second uniform scanning speed.

[0034] The first uniform scanning speed is less than the second uniform scanning speed.

[0035] The wafer scanning motion control method described in this application further includes a real-time vibration feedback compensation step, specifically:

[0036] During the acceleration and deceleration phases of the transverse axis and the changing motion of the longitudinal axis, the vibration of the moving axis is collected in real time by vibration sensors.

[0037] The control unit dynamically adjusts the acceleration / deceleration parameters of the transverse axis and the driving force output of the longitudinal axis based on the vibration amount.

[0038] Secondly, this application provides a wafer scanning motion control system, comprising:

[0039] Wafer carrier assembly, used to position and fix the wafer to be scanned;

[0040] The lateral drive assembly is configured to drive the scanning actuator to move laterally, the motion phases of which include an acceleration phase, a constant speed phase and a deceleration phase, and the scanning operation is performed on the wafer area only during the constant speed phase.

[0041] The longitudinal movement drive assembly is configured to drive the transverse movement drive assembly or the wafer carrier assembly to move longitudinally to achieve a switching action;

[0042] The main control unit is electrically connected to the transverse drive assembly and the longitudinal drive assembly, respectively, and is configured as follows:

[0043] The transverse axis is controlled to accelerate from the starting position to a preset uniform scanning speed, and then enters the wafer area for uniform scanning.

[0044] When the transverse axis reaches the deceleration section outside the wafer area, the longitudinal axis is synchronously controlled to perform a downward switching action;

[0045] If the total time required for the longitudinal axis to complete the swapping action is greater than the deceleration time of the transverse axis after the first row scan, then when the transverse axis starts the acceleration segment movement of the second row of the wafer, the swapping action that the longitudinal axis has not completed will continue to be executed.

[0046] For each row from the second row to the second to last row, the horizontal axis enters the constant speed segment after the acceleration segment for scanning. The acceleration segment must synchronously complete the switching operation that was not completed in the previous row.

[0047] For each row from the second row to the second to last row, when the horizontal axis reaches the deceleration section of that row, the horizontal axis deceleration and vertical axis switching operations are performed simultaneously until the scanning and line changing of that row are completed;

[0048] When the transverse axis performs a scan on the last line, after completing the scan of the last line in the acceleration section to the constant speed section, it only performs a deceleration action when entering the deceleration section, without performing a line change.

[0049] The system also includes a memory and a processor. The memory contains a program for a wafer scanning motion control method. When the program for the wafer scanning motion control method is executed by the processor, it performs the following steps:

[0050] The transverse axis is controlled to accelerate from the starting position to a preset uniform scanning speed, and then enters the wafer area for uniform scanning.

[0051] When the transverse axis reaches the deceleration section outside the wafer area, the longitudinal axis is synchronously controlled to perform a downward switching action;

[0052] If the total time required for the longitudinal axis to complete the swapping action is greater than the deceleration time of the transverse axis after the first row scan, then when the transverse axis starts the acceleration segment movement of the second row of the wafer, the swapping action that the longitudinal axis has not completed will continue to be executed.

[0053] For each row from the second row to the second to last row, the horizontal axis enters the constant speed segment after the acceleration segment for scanning. The acceleration segment must synchronously complete the switching operation that was not completed in the previous row.

[0054] For each row from the second row to the second to last row, when the horizontal axis reaches the deceleration section of that row, the horizontal axis deceleration and vertical axis switching operations are performed simultaneously until the scanning and line changing of that row are completed;

[0055] When the transverse axis performs a scan on the last line, after completing the scan of the last line in the acceleration section to the constant speed section, it only performs a deceleration action when entering the deceleration section, without performing a line change.

[0056] As can be seen from the above, the wafer scanning motion control method disclosed in this invention improves scanning efficiency through the coordinated motion logic of the horizontal and vertical axes: the horizontal axis accelerates to a preset uniform speed based on wafer parameters and equipment performance before entering the wafer area for scanning; during the deceleration phase, the vertical axis switching action is performed synchronously; any unfinished switching can be completed in the subsequent acceleration phase; intermediate rows achieve continuous scanning by ending the previous row's switching during the acceleration phase and simultaneously switching the current row during the deceleration phase; the last row only decelerates to end the process. Simultaneously, by combining pre-calculated and dynamically adjusted matching switching and deceleration times, adjusting the acquisition frequency according to wafer area division, using calibrated S-shaped acceleration and deceleration curves, dynamically adjusting the scanning speed based on area characteristics (not exceeding the maximum stable speed), and real-time vibration feedback compensation, a comprehensive balance between scanning efficiency and accuracy is achieved, enhancing the equipment's operational stability and adaptability.

[0057] Other features and advantages of this application will be set forth in the following description and will be apparent in part from the description or may be learned by practicing embodiments of this application. The objectives and other advantages of this application may be realized and obtained by means of the structures particularly pointed out in the written description and the accompanying drawings. Attached Figure Description

[0058] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0059] Figure 1 A high-level flowchart of a wafer scanning motion control method provided in this application embodiment, used for wafer scanning process control;

[0060] Figure 2 A schematic diagram of the scanning motion of a wafer scanning motion control method provided in this application embodiment;

[0061] Figure 3 A flowchart illustrating the determination of the total time required for the longitudinal axis to complete the switching action in a wafer scanning motion control method provided in this application embodiment;

[0062] Figure 4 A flowchart illustrating the continued execution of an incomplete swapping action in the second row of the transverse axis acceleration segment of a wafer scanning motion control method provided in this application embodiment;

[0063] Figure 5 This is a structural block diagram of a wafer scanning motion control system provided in an embodiment of this application. Detailed Implementation

[0064] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0065] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, in the description of this application, terms such as "first" and "second" are used only to distinguish descriptions and should not be construed as indicating or implying relative importance. It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties, and the collection, use, and processing of related data must comply with the relevant laws, regulations, and standards of the relevant countries and regions.

[0066] Please refer to Figure 1 , Figure 1 This is a high-level flowchart of a wafer scanning motion control method in some embodiments of this application. The high-level flowchart can be summarized as follows: In the initial stage, the transverse axis is controlled to start from its initial position and accelerate to a uniform scanning speed set based on wafer parameters and equipment performance according to a preset plan, then enters the wafer region to perform uniform scanning; when the transverse axis reaches the deceleration section outside the wafer region, the longitudinal axis is simultaneously triggered to perform a downward switching action; if the total time of the longitudinal axis switching action exceeds the transverse axis deceleration time, the unfinished portion will continue to be executed in the acceleration section of the second transverse axis; for the middle row from the second row to the second-to-last row, the transverse axis first passes through the acceleration section (synchronously completing the previous row). After the unfinished switching operation reaches a constant speed, it enters the wafer area scanning. When it reaches the deceleration section of that row, the transverse axis deceleration and longitudinal axis switching operation are performed synchronously again to ensure the smooth connection between each row scan and switching. At the end of the process, after the transverse axis completes the acceleration and constant speed scanning of the last row, it enters the deceleration section and only performs deceleration until it stops, ending the entire scanning process. At the same time, the entire process incorporates multiple optimization mechanisms, including pre-calculating and dynamically adjusting the longitudinal axis switching time to match the transverse axis deceleration time, dynamically adjusting the acquisition frequency according to the wafer area division, using a calibrated S-shaped acceleration and deceleration curve, dynamically adjusting the constant speed scanning speed according to the characteristics of the wafer area (not exceeding the maximum stable operating speed), and collecting vibration in real time through vibration sensors and dynamically adjusting motion parameters to form a complete control process that takes into account efficiency and accuracy, stability and adaptability.

[0067] Please refer to Figure 2 , Figure 2This is a motion control schematic diagram of a wafer scanning motion control method according to some embodiments of this application. The motion control schematic diagram can be summarized as follows: the scanning start point, the scanning path, and motion control within the wafer contour are key components to ensure the stability and accuracy of the scanning imaging. The scanning start point serves as the starting point of the entire scanning process, and the scanning path is indicated by a thick arrow in the diagram. The wafer contour is represented by a dashed circular frame. Within the wafer contour, i.e., within the dashed circular frame, the lateral scanning axis maintains a uniform speed. By maintaining uniform speed, the stability and accuracy of the scanning imaging within the wafer contour can be effectively guaranteed, providing a reliable data foundation for subsequent wafer analysis and processing.

[0068] Optimized control logic outside the wafer outline: When the lateral scan axis reaches the deceleration section outside the wafer outline, the longitudinal scan axis simultaneously performs a downward line-changing action to make full use of the movement time of the acceleration and deceleration sections. If the time required for line changing is greater than the deceleration time of the lateral scan axis, the line-changing action is completed in the acceleration section of the lateral scan axis in the second row, thereby achieving overlapping execution of line changing and acceleration / deceleration sections and improving overall scanning efficiency.

[0069] Scan End Point: The scan path eventually reaches the end position on the right, completing the entire wafer scan process.

[0070] This application employs the following control methods:

[0071] (1) First line scan control: In the acceleration phase of the first line, the motion axis is accelerated to a preset uniform running speed according to the conventional electrical control method. When the first line reaches the deceleration phase, the motion axis simultaneously performs a downward switching action. If the switching time is greater than the deceleration time, the switching action is continued in the acceleration phase of the second line.

[0072] (2) Scanning control of the second and subsequent lines: After passing through the acceleration section, the second line directly enters the constant speed section for scanning. When the second line reaches the deceleration section, the same line-changing operation as the first line is repeated, that is, deceleration and line-changing are performed simultaneously. The above process is repeated until the last line is scanned;

[0073] (3) End control of the last line: In the deceleration phase of the last line, the motion axis only performs deceleration action and does not perform line change, thus ending the entire scanning process.

[0074] The beneficial effect of this application is its methodological advantage:

[0075] (1) Efficiency improvement: By overlapping the switching action with the acceleration and deceleration phase, the acceleration and deceleration time discarded in the traditional method is fully utilized, which significantly improves the scanning efficiency.

[0076] (2) Motion continuity: The synchronous execution of the switching action and the acceleration and deceleration phase reduces the pause time of the motion axis and ensures the smoothness of the scanning process;

[0077] (3) Wide applicability: This method is applicable to multi-line scanning scenarios and can effectively shorten the overall scanning time. It is especially suitable for wafer inspection scenarios with high precision and high efficiency requirements.

[0078] This application optimizes the scanning control logic by combining the switching action with acceleration and deceleration stages, effectively reducing the efficiency loss caused by abandoning acceleration and deceleration stages in traditional scanning methods. While ensuring imaging quality, it significantly improves scanning efficiency, providing an efficient and reliable electrical control solution for the wafer inspection field.

[0079] The first aspect of this invention discloses a wafer scanning motion control method for use in terminal devices, such as computers and mobile terminals. This wafer scanning motion control method includes the following steps:

[0080] The transverse axis is controlled to accelerate from the starting position to a preset uniform scanning speed, and then enters the wafer area for uniform scanning.

[0081] When the transverse axis reaches the deceleration section outside the wafer area, the longitudinal axis is synchronously controlled to perform a downward switching action;

[0082] If the total time required for the longitudinal axis to complete the swapping action is greater than the deceleration time of the transverse axis after the first row scan, then when the transverse axis starts the acceleration segment movement of the second row of the wafer, the swapping action that the longitudinal axis has not completed will continue to be executed.

[0083] For each row from the second row to the second to last row, the horizontal axis enters the constant speed segment after the acceleration segment for scanning. The acceleration segment must synchronously complete the switching operation that was not completed in the previous row.

[0084] For each row from the second row to the second to last row, when the horizontal axis reaches the deceleration section of that row, the horizontal axis deceleration and vertical axis switching operations are performed simultaneously until the scanning and line changing of that row are completed;

[0085] When the transverse axis performs a scan on the last line, after completing the scan of the last line in the acceleration section to the constant speed section, it only performs a deceleration action when entering the deceleration section, without performing a line change.

[0086] The wafer scanning motion control method of this invention achieves efficient and high-precision wafer scanning through the coordinated motion control of the transverse and longitudinal axes. Its core process is as follows: First, the transverse axis is controlled to start from the initial position and accelerate to a preset uniform scanning speed according to a calibrated S-shaped acceleration / deceleration curve. This speed is set based on the wafer diameter parameters, detection accuracy requirements, and motion performance parameters of the scanning equipment, and does not exceed the maximum stable operating speed of the equipment in the uniform speed range. Then, it enters the wafer area to perform uniform scanning. During this process, the acquisition frequency of the scanning signal is dynamically adjusted according to the preset effective detection area and edge transition area division on the wafer surface (a higher first acquisition frequency is used for the effective detection area, and a lower second acquisition frequency is used for the edge transition area). Simultaneously, the transverse axis is dynamically adjusted according to the defect risk level and pattern density characteristics of each area of ​​the wafer. The scanning speed is adjusted to a uniform speed (lower speeds correspond to areas with high defect risk or high pattern density, and vice versa, with the adjusted speed not exceeding the maximum stable operating speed). When the transverse axis reaches the deceleration section outside the wafer area, the longitudinal axis is synchronously controlled to perform a downward switching action. The total time for the longitudinal axis to complete the switching action is determined by pre-calculating the sum of its acceleration time, uniform speed time, and deceleration time. The deceleration time of the transverse axis is determined by pre-calculating the time it takes to decelerate from the uniform scanning speed to the preset low speed. The time difference between the two is controlled by dynamically adjusting the acceleration parameters of the longitudinal axis. The system is controlled within a preset threshold. If the total time for the longitudinal axis switching action is still greater than the transverse axis deceleration time, the control unit will pre-store the displacement parameters of the transverse axis acceleration segment and the remaining displacement parameters of the longitudinal axis. In the transverse axis acceleration segment of the second row, the acceleration segment duration is calculated based on the preset acceleration curve of the transverse axis, and the motion curve of the remaining displacement of the longitudinal axis is planned simultaneously. The longitudinal axis is controlled to move according to the planned curve to ensure that the longitudinal axis completes the remaining displacement when the transverse axis reaches the preset uniform scanning speed. For each row from the second row to the second to last row, the transverse axis first goes through the acceleration segment (synchronously completing the switching action that was not completed in the previous row) and then enters the uniform speed segment. The scanning process involves a horizontal axis deceleration and a vertical axis switching motion, synchronized again upon reaching the deceleration phase of the current row until the current row is scanned and the switching motion is completed. Throughout the entire horizontal axis acceleration, deceleration, and vertical axis switching motion, vibration sensors collect the vibration data of the moving axes in real time. The control unit dynamically adjusts the acceleration / deceleration parameters of the horizontal axis and the driving force output of the vertical axis based on this vibration data to compensate for the vibration effects. Finally, after the horizontal axis completes the last row scan from the acceleration phase to the constant speed phase, it enters the deceleration phase and only performs a deceleration motion (without switching the row), ultimately stopping the motion to end the entire scanning process. This method significantly improves scanning efficiency while ensuring scanning accuracy through precise timing coordination of horizontal and vertical axis motion, dynamic parameter adjustment, and vibration compensation. It is also adaptable to different wafer characteristics and equipment performance, exhibiting good stability and applicability.

[0087] According to an embodiment of the present invention, the control of the transverse axis to accelerate from the starting position to a preset uniform scanning speed specifically involves:

[0088] The preset uniform scanning speed is set based on the wafer diameter parameters, detection accuracy requirements, and motion performance parameters of the scanning equipment.

[0089] The preset uniform scanning speed does not exceed the maximum stable operating speed of the scanning device in the uniform speed range.

[0090] The preset uniform scanning speed is not a fixed value, but is dynamically determined after comprehensively considering the core parameters of the wafer and the performance of the equipment. First, based on the wafer diameter (which determines the scanning range), the required detection accuracy (higher accuracy requires a corresponding speed reference), and the motion performance parameters of the scanning equipment (such as motor output power, transmission mechanism response speed, and other hardware limitations), the initial preset uniform scanning speed is determined through parameter calculation and debugging. At the same time, to ensure the stability of equipment operation and the reliability of scanning data, the preset uniform scanning speed must be strictly limited to the maximum stable operating speed that the scanning equipment can achieve in the uniform speed segment. That is, it must not exceed the upper limit of uniform speed operation supported by the equipment hardware and control algorithm, so as to avoid problems such as increased equipment vibration, scanning signal acquisition distortion, or increased mechanical wear caused by speed exceeding the limit. This lays a precise and stable motion foundation for the subsequent uniform scanning stage in the wafer area.

[0091] Please refer to Figure 3 , Figure 3 This is a flowchart illustrating the determination of the total time required for the longitudinal axis to complete the switching action in a wafer scanning motion control method according to some embodiments of this application. According to embodiments of the present invention, it further includes:

[0092] S301. Determine the total time required for the longitudinal axis to complete the switching action by pre-calculating the sum of the acceleration time, constant speed time and deceleration time of the longitudinal axis.

[0093] S302. Determine the deceleration time of the transverse axis by pre-calculating the time it takes for the transverse axis to decelerate from the uniform scanning speed to the preset low speed;

[0094] S303. By dynamically adjusting the acceleration parameters of the longitudinal axis, the difference between the total time of the longitudinal axis switching action and the deceleration time of the transverse axis is controlled within a preset threshold.

[0095] The total time for the vertical axis shifting motion is calculated by summing the times of three stages during its movement. First, based on the required shifting distance (e.g., the spacing between adjacent scan lines) and preset motion parameters, the acceleration time from rest to the required constant speed for shifting, the constant speed time at that speed, and the deceleration time from constant speed to stop are calculated. The sum of these three times is the total time for the vertical axis to complete one shifting motion. Simultaneously, the deceleration time of the horizontal axis is determined through pre-calculation. Specifically, the horizontal axis deceleration time is calculated from the current constant scan speed according to a preset deceleration curve (e.g., a calibrated S-curve). The time required for the transverse axis to decelerate to a preset low speed (a transition speed set to ensure smooth acceleration for the next scan line) is measured using a deceleration curve. To achieve synchronous coordination between the transverse axis deceleration process and the longitudinal axis changing action, and to avoid reduced scanning efficiency or motion shock due to time mismatch, this solution dynamically adjusts the acceleration parameters of the longitudinal axis (adjusting the magnitude of acceleration during the acceleration phase within the allowable range of equipment performance) to flexibly change the ratio of longitudinal axis acceleration time to deceleration time, thereby adjusting the total time of the changing action. This ensures that the difference between the total time of the longitudinal axis changing action and the transverse axis deceleration time is strictly controlled within a preset threshold (this threshold is set according to scanning accuracy requirements and equipment vibration suppression requirements), thus laying the foundation for the synchronous execution of the transverse axis deceleration segment and the longitudinal axis changing action. If a time difference still exists, the unfinished changing action can be completed by the subsequent transverse axis acceleration segment, ensuring the continuity and efficiency of the overall scanning process.

[0096] Please refer to Figure 4 , Figure 4 This is a flowchart illustrating the continuation of an incomplete swapping action in the second row's transverse axis acceleration segment, as described in some embodiments of this application, of a wafer scanning motion control method. According to an embodiment of the present invention, the continuation of the incomplete swapping action in the second row's transverse axis acceleration segment includes:

[0097] S401, The control unit pre-stores the displacement parameters of the acceleration segment of the transverse axis and the remaining displacement parameters of the longitudinal axis;

[0098] S402. Calculate the acceleration segment duration based on the preset acceleration curve of the transverse axis, and simultaneously plan the motion curve of the remaining displacement of the longitudinal axis.

[0099] S403. Control the longitudinal axis to move along the planned curve, so that the longitudinal axis completes the remaining displacement when the transverse axis reaches the preset uniform scanning speed.

[0100] The control unit records and pre-stores two sets of key parameters in real time at the end of the previous row's transverse axis deceleration phase: the displacement parameters required for the transverse axis to enter the second row's acceleration phase (including the displacement required to accelerate from the current low speed after deceleration to the preset uniform scanning speed, which is determined based on the distance from the wafer edge to the effective scanning area and the device's acceleration performance), and the remaining displacement parameters of the longitudinal axis that have not yet been completed (i.e., the remaining distance from the current position to the target row change position); subsequently, the control unit, based on the preset S of the transverse axis... An acceleration curve (the rate of change of acceleration of this curve has been pre-calibrated based on the inertial parameters of the transverse axis and the requirements for scanning stability) is used to accurately calculate the acceleration period required for the transverse axis to accelerate from the current speed to the preset uniform scanning speed. Based on the determined acceleration period, the control unit simultaneously plans a matching motion curve for the remaining displacement of the longitudinal axis. This curve needs to comprehensively consider the remaining displacement of the longitudinal axis, the maximum acceleration limit, and the time coordination with the acceleration process of the transverse axis. By dynamically allocating the proportion of acceleration, uniform speed, and deceleration phases of the longitudinal axis, it ensures that its motion rhythm is strictly synchronized with the acceleration process of the transverse axis. Finally, the control unit drives the longitudinal axis to perform actions according to the planned motion curve, so that the longitudinal axis can complete the remaining switching action at the exact moment when the transverse axis completes acceleration and reaches the preset uniform scanning speed. This ensures that when the transverse axis enters the wafer area to start the second row of uniform scanning, the longitudinal axis has been accurately positioned to the target row, avoiding the decrease in scanning efficiency or positional deviation affecting the detection accuracy due to row switching delay. This process is synchronized with the "acceleration phase of the intermediate row to complete the row switching that was not completed in the previous row". The control logic remains consistent, together forming a complete technical system for coordinated horizontal and vertical axis motion.

[0101] According to an embodiment of the present invention, the process of uniformly scanning the transverse axis in the wafer region includes:

[0102] The acquisition frequency of the scanning signal is dynamically adjusted according to the preset area division on the wafer surface;

[0103] The preset region division includes an effective detection region and an edge transition region;

[0104] The effective detection area corresponds to a first acquisition frequency, and the edge transition area corresponds to a second acquisition frequency. The first acquisition frequency is greater than the second acquisition frequency.

[0105] Based on the physical structure characteristics and inspection requirements of the wafer, the wafer surface is pre-divided into two key regions: the effective inspection region and the edge transition region. The effective inspection region is the core area with circuit patterns on the wafer surface, requiring high inspection accuracy. The edge transition region is the non-effective pattern area or transition area near the wafer edge, requiring relatively lower inspection accuracy. For this region division, the system matches differentiated acquisition frequency parameters to different regions. The effective inspection region corresponds to a first acquisition frequency (higher frequency) to ensure the accuracy and completeness of defect detection through higher density signal acquisition. The edge transition region corresponds to a second acquisition frequency (lower frequency), while meeting basic requirements. To reduce invalid data acquisition and lower data processing pressure while meeting inspection requirements, the control system maintains a preset uniform scanning speed during the actual scanning process. It automatically switches to the corresponding region's acquisition frequency by real-time identification of the current scanning position (e.g., comparing coordinate information from position sensors with preset region boundary parameters). This achieves a smooth switching of acquisition frequency from the edge transition zone to the effective inspection zone (or vice versa). This mechanism, combined with the control logic that dynamically adjusts the uniform scanning speed of the transverse axis based on region characteristics (e.g., using low speed and high frequency in high-risk areas, and high speed and appropriate frequency in low-risk areas), forms a scanning mode that optimizes both speed and frequency. This avoids the problems of insufficient effective area data or redundant edge area data under a uniform frequency, while maintaining coordination with the overall motion control process, further improving the balance between accuracy and efficiency in wafer inspection.

[0106] According to an embodiment of the present invention, it further includes:

[0107] The acceleration and deceleration phases of the transverse axis are both controlled by S-shaped acceleration and deceleration curves;

[0108] The acceleration change rate of the S-shaped acceleration / deceleration curve is pre-calibrated based on the inertial parameters of the transverse axis and the stability requirements of wafer scanning.

[0109] The acceleration and deceleration phases of the transverse axis are controlled using S-shaped acceleration / deceleration curves. This design aims to achieve a smooth transition in the motion process and reduce mechanical shock and vibration interference. The S-shaped acceleration / deceleration curve differs from the traditional uniform acceleration / deceleration curve in that its acceleration is not a constant value, but follows a pattern of "zero acceleration at the beginning → gradually increasing to maximum acceleration → maintaining maximum acceleration → gradually decreasing to zero acceleration." Acceleration transition intervals are set at the beginning and end of both the acceleration and deceleration phases, giving the velocity curve a smooth "S"-shaped characteristic. Among these, the core parameter of the S-shaped acceleration / deceleration curve, the rate of change of acceleration (i.e., the rate of change of acceleration over time), needs to be determined through pre-calibration. The calibration process comprehensively considers two key factors: first, the inertial parameters of the transverse axis, including the physical characteristics such as the mass of the moving parts and the rotational inertia of the transmission mechanism, to ensure that the curve parameters match the dynamic characteristics of the mechanical system; second, the stability requirements of wafer scanning, setting a vibration suppression threshold according to the detection accuracy level (such as nanometer-level or micrometer-level defect detection), and controlling the peak impact acceleration during the motion process by adjusting the rate of change of acceleration to avoid distortion of the scanning signal due to severe vibration. This control method works in synergy with the real-time vibration feedback compensation step: the S-shaped acceleration / deceleration curve reduces vibration excitation from the control source, while the vibration sensor monitors residual vibration in real time and dynamically adjusts the acceleration / deceleration parameters. Together, they ensure the smoothness of the transverse axis during acceleration and deceleration, laying the foundation for high-precision detection during the uniform speed scanning stage. At the same time, it does not conflict with the time coordination logic of the longitudinal axis switching action, ensuring the consistency and reliability of the overall motion control system.

[0110] According to an embodiment of the present invention, it further includes:

[0111] After the transverse axis enters the wafer region, the preset uniform scanning speed is dynamically adjusted according to the preset regional characteristics of the wafer and does not exceed the maximum stable operating speed.

[0112] The regional characteristics include the defect risk level and pattern density of each region of the wafer;

[0113] The regions with high defect risk levels or high pattern density correspond to the first uniform scanning speed.

[0114] The regions with low defect risk levels or low pattern density correspond to the second uniform scanning speed.

[0115] The first uniform scanning speed is less than the second uniform scanning speed.

[0116] The uniform scanning process after the transverse axis enters the wafer area does not employ a fixed speed. Instead, it dynamically adjusts the speed based on preset regional characteristics of the wafer. This adjustment strictly adheres to the constraint of "not exceeding the maximum stable operating speed of the scanning equipment in the uniform speed range" to ensure the stability and safety of the equipment operation. The regional characteristics specifically focus on two core parameters: defect risk level and pattern density in each region of the wafer. Regions with high defect risk levels (such as areas with frequent defects in historical inspections or process-sensitive areas) require higher scanning accuracy, while regions with high pattern density (such as areas with high integration circuit patterns) require richer details. Therefore, for these two types of regions, the transverse axis automatically switches to a lower uniform scanning speed, extending the scanning time to ensure the integrity and accuracy of the detection signal. Conversely, for regions with low defect risk levels (such as conventional areas with extremely low defect rates) and low pattern density (such as areas with sparse circuit wiring), where the requirement for scanning accuracy is relatively low, the transverse axis uses a higher uniform scanning speed to improve overall scanning efficiency while meeting basic inspection requirements. This dynamic adjustment mechanism works in synergy with the wafer surface region division and acquisition frequency adjustment: within the effective detection area, the "speed and frequency" parameters are dynamically matched based on the regional characteristics (e.g., low speed + high acquisition frequency for high-risk, high-density areas, and high speed + adapted acquisition frequency for low-risk, low-density areas). In the edge transition area, the adapted speed ensures the continuity of the transition section detection. At the same time, this speed adjustment only applies to the uniform scanning stage of the transverse axis, without affecting the motion control of the acceleration and deceleration stages based on the S-shaped acceleration and deceleration curves, nor interfering with the synchronous coordination logic of the longitudinal axis switching action and the transverse axis deceleration stage. Thus, a balance mechanism of "precise detection and efficient scanning" is formed in the overall technical solution, further enhancing the adaptability of the method to the detection needs of different types of wafers.

[0117] According to an embodiment of the present invention, a real-time vibration feedback compensation step is further included, specifically:

[0118] During the acceleration and deceleration phases of the transverse axis and the changing motion of the longitudinal axis, the vibration of the moving axis is collected in real time by vibration sensors.

[0119] The control unit dynamically adjusts the acceleration / deceleration parameters of the transverse axis and the driving force output of the longitudinal axis based on the vibration amount.

[0120] To further suppress vibration interference during motion and ensure scanning accuracy, a real-time vibration feedback compensation step is implemented. This step forms a closed-loop coordination with the acceleration / deceleration control of the transverse axis and the switching action of the longitudinal axis. Specifically, throughout the entire process of the transverse axis performing acceleration (accelerating from the initial speed or low speed to the preset uniform scanning speed), deceleration (decelerating from the uniform scanning speed to a low speed or stopping), and the longitudinal axis performing downward switching action (including acceleration, uniform speed, and deceleration phases), vibration data is collected in real time by vibration sensors (such as piezoelectric or inertial sensors) installed on the motion axis or equipment frame. This data includes key parameters such as vibration amplitude, frequency, and phase, and is directly fed back to the control unit. The control unit analyzes real-time vibration based on a preset vibration threshold (set according to wafer inspection accuracy requirements). If the vibration exceeds the threshold, the acceleration and deceleration parameters of the transverse axis are dynamically adjusted. For example, the acceleration change rate of the S-shaped acceleration and deceleration curve is optimized to reduce the impact acceleration during acceleration or deceleration and reduce vibration caused by sudden changes in motion state. Simultaneously, for the longitudinal axis, the motion acceleration is changed by adjusting its driving force output (such as optimizing the current or voltage output of the servo motor) to avoid resonance between the longitudinal axis switching action and the transverse axis acceleration and deceleration process. This compensation process does not interfere with the core collaborative logic of the transverse and longitudinal axes: when adjusting the acceleration and deceleration parameters of the transverse axis, the duration of the acceleration and deceleration segments is ensured to match the time requirements of the longitudinal axis switching action (or the unfinished switching is completed by subsequent acceleration segments); when adjusting the driving force of the longitudinal axis, the difference threshold between its total switching action time and the transverse axis deceleration time is not exceeded; and all adjustments are made within the range of the equipment's motion performance parameters, consistent with the constraint that the preset uniform scanning speed does not exceed the maximum stable operating speed. This real-time dynamic compensation effectively alleviates vibration problems during the start-up, shutdown, and reversal phases of the motion axis. Together with the pre-calibrated S-shaped acceleration and deceleration curves, it forms a dual stabilization mechanism of "source suppression + dynamic correction," providing a reliable motion basis for precise scanning of various areas of the wafer.

[0121] According to embodiments of the present invention, a multi-device detection data collaborative identification step is also included:

[0122] A data sharing network is built in a distributed scanning device cluster. Each scanning device uploads the wafer defect feature data it collects in its local uniform speed scanning segment to the edge computing node after desensitization processing.

[0123] The edge computing nodes train a general defect identification model using a federated learning algorithm, and then distribute the general defect identification model to each scanning device.

[0124] When a single scanning device detects a suspected defect area during a uniform scanning process, in addition to performing a preset scanning speed adjustment, the general defect identification model is invoked to perform cross-device feature comparison.

[0125] The data collaborative identification step does not affect the acceleration / deceleration curve parameters of the transverse axis or the time collaborative logic of the longitudinal axis switching action.

[0126] To further improve the accuracy and intelligence of defect detection, a multi-device detection data collaborative identification step has been added. This step, as an upper-level data processing mechanism, complements and does not conflict with the lower-level horizontal and vertical axis motion control logic. Specifically, in a distributed cluster composed of multiple scanning devices, a secure data sharing network is constructed, enabling each scanning device to upload wafer defect feature data collected during its local uniform scanning segment (i.e., the stage where the transverse axis maintains a preset uniform scanning speed) to an edge computing node after desensitization processing (removing sensitive information such as wafer identifiers). The edge computing node uses a federated learning algorithm to jointly train the feature data uploaded by multiple devices, generating a general defect identification model applicable to different wafer types, and distributes this model to each scanning device in the cluster, achieving global optimization and local deployment of the model. When a single scanning device detects a suspected defect area through signal acquisition during uniform scanning (e.g., within the effective detection area), in addition to executing the preset scanning speed adjustment strategy in the original technical solution (e.g., reducing the speed to improve acquisition accuracy), it synchronously calls the locally deployed general defect identification model to perform cross-device comparison and verification of the current suspected defect features with historical feature data uploaded by other devices, thereby improving the accuracy of defect judgment. It should be noted that this data collaborative identification step only applies to the analysis and identification of scanning signals and does not involve transverse axis acceleration / deceleration curve parameters (e.g., S). The adjustment of the acceleration change rate of the curve does not affect the time coordination logic of the longitudinal axis switching action and the transverse axis deceleration segment (including the matching of the total switching time and deceleration time, and the continuation of the unfinished switching in the acceleration segment). It runs in parallel and independently with motion control optimization measures such as vibration feedback compensation and regional feature adaptation, and together constitutes a complete technical solution that takes into account both motion accuracy and detection intelligence.

[0127] According to an embodiment of the present invention, the execution process of the wafer scanning motion control method includes three stages: equipment preparation and operation, equipment start-up and equipment end-up. The coordinated operation of each stage is ensured through the setting and optimization of motion control parameters, as detailed below:

[0128] I. Equipment preparation and operation phase

[0129] Scanning equipment initialization: Initialize the scanning equipment to ensure its proper functioning, including self-test, parameter loading, and operation status confirmation, in order to prepare for subsequent scanning tasks;

[0130] Horizontal and vertical axis initialization: Initialize the horizontal and vertical axes to ensure that all axes can be accurately positioned and moved to the starting position of wafer scanning, and start the scanning process after the wafer is placed in.

[0131] Initialization of wafer fixing equipment: Initialize the wafer fixing equipment to ensure that it is in normal operating condition before the wafer is placed in, so as to stably fix the wafer and provide a reliable basis for testing.

[0132] II. Equipment Start-up Phase

[0133] Wafer placement and fixing: The transport mechanism places the wafer to be inspected into the wafer fixing device. After the fixing device completes the wafer fixing, it sends a fixing completion command to the electrical motion controller.

[0134] Scanning Motion Control: After receiving the fixed completion command, the electrical motion controller controls the horizontal and vertical axes to begin scanning motion along a preset path. When the horizontal axis enters the constant speed section and enters the wafer scanning range, the electrical motion controller sends a pulse command to activate the scanning equipment for high-precision wafer inspection. When the horizontal axis reaches the deceleration section, the electrical motion controller pre-controls the vertical axis to perform the next row movement operation, ensuring that the row change is completed in advance on the horizontal axis to improve scanning efficiency.

[0135] Scanning process execution: Under the control of the electrical motion controller, the entire system completes the scanning process according to the set electrical control method to ensure full coverage inspection of the wafer surface.

[0136] III. Equipment shutdown phase

[0137] Motion axis reset: When the electrical motion controller detects that the entire scanning process is completed, it controls the transverse and longitudinal axes to move to their initial positions to prepare for the next scanning task;

[0138] Scan End Signal: The electro-motion controller sends a scan end signal to notify the relevant equipment to complete the current task;

[0139] Wafer release and removal: After receiving the scan end signal, the wafer fixing equipment releases the wafer, and the transport mechanism removes the wafer from the fixing equipment to complete the inspection process;

[0140] System Reset: The entire system returns to its initial state, awaiting the next wafer scan task, ensuring efficient and continuous operation of the equipment.

[0141] IV. Setting and Optimizing Motion Control Parameters

[0142] The electrical motion controller can support setting the acceleration, deceleration, and uniform speed of the transverse and longitudinal axes. This electrical control method mainly adjusts these parameters to meet the required operating conditions.

[0143] Through physical formulas Find the times t1 and t2 required for the acceleration and deceleration phases of the transverse axis, and the times t3 and t4 required for the acceleration and deceleration phases of the longitudinal axis (given: acceleration, deceleration, and uniform velocity of the transverse and longitudinal axes).

[0144] Through physical formulas Find the distances x1 and x2 between the acceleration and deceleration segments of the longitudinal axis (Given: the acceleration, deceleration, and uniform velocity of the longitudinal axis; V0 is 0 m / s during the acceleration segment; V0 is the uniform velocity of the longitudinal axis during the deceleration segment; the time required for the acceleration and deceleration segments of the longitudinal axis is t3 and t4).

[0145] The distance x3 of the uniform velocity segment along the longitudinal axis is obtained by calculating x3 = x0 - x1 - x2. Substituting the distance x3 and the velocity of the uniform velocity segment along the longitudinal axis into the physical formula... Calculate the time t5 of the uniform speed segment of the longitudinal axis (given: the distance x0 that the longitudinal axis needs to move to the next row, and the distances x1 and x2 of the acceleration and deceleration segments of the longitudinal axis).

[0146] Adjust the parameters of the electrical motion controller to ensure that the total motion time t1+t2>t3+t4+t5, so as to ensure that the longitudinal axis completes the change of motion before the transverse axis completes the acceleration and deceleration phase, thus avoiding motion conflict.

[0147] The aforementioned wafer scanning electrical control method enables the electrical motion controller to achieve efficient control of the transverse and longitudinal axes, ensuring the stability and continuity of the scanning motion. This method provides a reliable motion control solution for wafer inspection equipment, suitable for high-precision, high-efficiency semiconductor manufacturing scenarios.

[0148] Please refer to Figure 5 , Figure 5 This is a structural block diagram of a wafer scanning motion control system provided in an embodiment of this application.

[0149] A second aspect of the present invention also discloses a wafer scanning motion control system, comprising:

[0150] The wafer carrier assembly 501 is used to position and fix the wafer to be scanned;

[0151] The lateral drive assembly 502 is configured to drive the scanning actuator to move laterally, and its movement phases include an acceleration phase, a constant speed phase and a deceleration phase, and the scanning operation is performed on the wafer area only in the constant speed phase.

[0152] The longitudinal movement drive component 503 is configured to drive the transverse movement drive component or the wafer carrier component to move longitudinally to achieve a switching action;

[0153] The main control unit 504 is electrically connected to the transverse drive assembly and the longitudinal drive assembly, respectively, and the main control unit is configured as follows:

[0154] The transverse axis is controlled to accelerate from the starting position to a preset uniform scanning speed, and then enters the wafer area for uniform scanning.

[0155] When the transverse axis reaches the deceleration section outside the wafer area, the longitudinal axis is synchronously controlled to perform a downward switching action;

[0156] If the total time required for the longitudinal axis to complete the swapping action is greater than the deceleration time of the transverse axis after the first row scan, then when the transverse axis starts the acceleration segment movement of the second row of the wafer, the swapping action that the longitudinal axis has not completed will continue to be executed.

[0157] For each row from the second row to the second to last row, the horizontal axis enters the constant speed segment after the acceleration segment for scanning. The acceleration segment must synchronously complete the switching operation that was not completed in the previous row.

[0158] For each row from the second row to the second to last row, when the horizontal axis reaches the deceleration section of that row, the horizontal axis deceleration and vertical axis switching operations are performed simultaneously until the scanning and line changing of that row are completed;

[0159] When the transverse axis performs a scan on the last line, after completing the scan of the last line in the acceleration section to the constant speed section, it only performs a deceleration action when entering the deceleration section, without performing a line change.

[0160] The system also includes a memory and a processor, the memory including a program for a wafer scanning motion control method, which, when executed by the processor, implements the steps of the wafer scanning motion control method as described in any one of the first aspects.

[0161] This invention discloses a wafer scanning motion control method and system. The method achieves efficient scanning by precisely coordinating the movements of the transverse and longitudinal axes. Specifically, it includes: controlling the transverse axis to accelerate from its starting position to a preset uniform scanning speed based on wafer parameters and equipment performance, but not exceeding the maximum stable operating speed; scanning at a uniform speed after entering the wafer region; synchronously controlling the longitudinal axis to perform a line-changing operation when the transverse axis reaches the deceleration phase; if the total line-changing time exceeds the transverse axis deceleration time, it continues in the acceleration phase of subsequent rows; intermediate rows achieve continuous scanning by ending the previous row's line-changing in the acceleration phase and simultaneously changing the current row in the deceleration phase; and the last row only decelerates to end the process. Simultaneously, the method also includes pre-calculating and dynamically adjusting the longitudinal axis line-changing time to match the transverse axis deceleration time, dynamically adjusting the acquisition frequency based on wafer region division (effective detection area and edge transition area), and using a calibrated S... The system employs various optimization measures, including using acceleration / deceleration curves, dynamically adjusting the uniform scanning speed based on wafer region characteristics (defect risk level, pattern density) while ensuring it does not exceed the maximum stable operating speed, and real-time acquisition of vibration data via vibration sensors to dynamically adjust motion parameters. The corresponding control system includes a wafer carrier assembly, a transverse drive assembly, a longitudinal drive assembly, and a main control unit, or may include a memory and processor. When the main control unit or processor executes relevant programs, it can implement the above control methods. The overall solution significantly improves scanning efficiency while ensuring scanning accuracy through precise coordination of transverse and longitudinal axis movements, dynamic parameter adjustment, and vibration compensation. It also enhances the stability of equipment operation and adaptability to different wafer characteristics.

[0162] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are merely illustrative. For example, the division of units is only a logical functional division, and in actual implementation, there may be other division methods, such as: multiple units or components can be combined, or integrated into another system, or some features can be ignored or not executed. In addition, the coupling, direct coupling, or communication connection between the various components shown or discussed can be through some interfaces, and the indirect coupling or communication connection between devices or units can be electrical, mechanical, or other forms.

[0163] The units described above as separate components may or may not be physically separate. The components shown as units may or may not be physical units. They may be located in one place or distributed across multiple network units. Some or all of the units may be selected to achieve the purpose of this embodiment according to actual needs.

[0164] In addition, in the various embodiments of the present invention, each functional unit can be integrated into one processing unit, or each unit can be a separate unit, or two or more units can be integrated into one unit; the integrated unit can be implemented in hardware or in the form of hardware plus software functional units.

[0165] Those skilled in the art will understand that all or part of the steps of the above method embodiments can be implemented by hardware related to program instructions. The aforementioned program can be stored in a readable storage medium. When the program is executed, it performs the steps of the above method embodiments. The aforementioned storage medium includes various media that can store program code, such as mobile storage devices, read-only memory, random access memory, magnetic disks, or optical disks.

[0166] Alternatively, if the integrated units of this invention are implemented as software functional modules and sold or used as independent products, they can also be stored in a readable storage medium. Based on this understanding, the technical solutions of the embodiments of this invention, or the parts that contribute to the prior art, can be embodied in the form of a software product. This software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the methods described in the various embodiments of this invention. The aforementioned storage medium includes various media capable of storing program code, such as mobile storage devices, ROM, RAM, magnetic disks, or optical disks.

Claims

1. A wafer scanning motion control method, characterized in that, Includes the following steps: The transverse axis is controlled to accelerate from the starting position to a preset uniform scanning speed, and then enters the wafer area for uniform scanning. When the transverse axis reaches the deceleration section outside the wafer area, the longitudinal axis is synchronously controlled to perform a downward switching action; If the total time required for the longitudinal axis to complete the swapping action is greater than the deceleration time of the transverse axis after the first row scan, then when the transverse axis starts the acceleration segment movement of the second row of the wafer, the swapping action that the longitudinal axis has not completed will continue to be executed. For each row from the second row to the second to last row, the horizontal axis enters the constant speed segment after the acceleration segment for scanning. The acceleration segment must synchronously complete the switching operation that was not completed in the previous row. For each row from the second row to the second to last row, when the horizontal axis reaches the deceleration section of that row, the horizontal axis deceleration and vertical axis switching operations are performed simultaneously until the scanning and line changing of that row are completed; When the transverse axis performs a scan on the last line, after completing the scan of the last line in the acceleration section to the constant speed section, it only performs a deceleration action when entering the deceleration section, without performing a line change.

2. The wafer scanning motion control method according to claim 1, characterized in that, The control of the transverse axis to accelerate from the starting position to a preset uniform scanning speed is specifically as follows: The preset uniform scanning speed is set based on the wafer diameter parameters, detection accuracy requirements, and motion performance parameters of the scanning equipment. The preset uniform scanning speed does not exceed the maximum stable operating speed of the scanning device in the uniform speed range.

3. The wafer scanning motion control method according to claim 1, characterized in that, Also includes: The total time required for the longitudinal axis to complete the transfer motion is determined by pre-calculating the sum of the acceleration time, constant speed time, and deceleration time of the longitudinal axis. The deceleration time of the transverse axis is determined by pre-calculating the time it takes for the transverse axis to decelerate from a constant scanning speed to a preset low speed; By dynamically adjusting the acceleration parameters of the longitudinal axis, the difference between the total time of the longitudinal axis switching action and the deceleration time of the transverse axis is controlled within a preset threshold.

4. The wafer scanning motion control method according to claim 1, characterized in that, The unfinished changeover action continues during the lateral axis acceleration segment in the second row, including: The control unit pre-stores the displacement parameters of the acceleration segment of the transverse axis and the remaining displacement parameters of the longitudinal axis; The acceleration segment duration is calculated based on the preset acceleration curve of the transverse axis, and the motion curve of the remaining displacement of the longitudinal axis is planned simultaneously. Control the longitudinal axis to move along the planned curve, so that the longitudinal axis completes the remaining displacement when the transverse axis reaches the preset uniform scanning speed.

5. The wafer scanning motion control method according to claim 1, characterized in that, The process of uniformly scanning the transverse axis across the wafer region includes: The acquisition frequency of the scanning signal is dynamically adjusted according to the preset area division on the wafer surface; The preset region division includes an effective detection region and an edge transition region; The effective detection area corresponds to a first acquisition frequency, and the edge transition area corresponds to a second acquisition frequency. The first acquisition frequency is greater than the second acquisition frequency.

6. The wafer scanning motion control method according to claim 1, characterized in that, Also includes: The acceleration and deceleration phases of the transverse axis are both controlled by S-shaped acceleration and deceleration curves; The acceleration change rate of the S-shaped acceleration / deceleration curve is pre-calibrated based on the inertial parameters of the transverse axis and the stability requirements of wafer scanning.

7. The wafer scanning motion control method according to claim 1, characterized in that, Also includes: After the transverse axis enters the wafer region, the preset uniform scanning speed is dynamically adjusted according to the preset regional characteristics of the wafer and does not exceed the maximum stable operating speed. The regional characteristics include the defect risk level and pattern density of each region of the wafer; The regions with high defect risk levels or high pattern density correspond to the first uniform scanning speed. The regions with low defect risk levels or low pattern density correspond to the second uniform scanning speed. The first uniform scanning speed is less than the second uniform scanning speed.

8. The wafer scanning motion control method according to claim 1, characterized in that, It also includes a real-time vibration feedback compensation step, specifically: During the acceleration and deceleration phases of the transverse axis and the changing motion of the longitudinal axis, the vibration of the moving axis is collected in real time by vibration sensors. The control unit dynamically adjusts the acceleration / deceleration parameters of the transverse axis and the driving force output of the longitudinal axis based on the vibration amount.

9. A wafer scanning motion control system, characterized in that, include: Wafer carrier assembly, used to position and fix the wafer to be scanned; The lateral drive assembly is configured to drive the scanning actuator to move laterally, the motion phases of which include an acceleration phase, a constant speed phase and a deceleration phase, and the scanning operation is performed on the wafer area only during the constant speed phase. The longitudinal movement drive assembly is configured to drive the transverse movement drive assembly or the wafer carrier assembly to move longitudinally to achieve a switching action; The main control unit is electrically connected to the transverse drive assembly and the longitudinal drive assembly, respectively, and is configured as follows: The transverse axis is controlled to accelerate from the starting position to a preset uniform scanning speed, and then enters the wafer area for uniform scanning. When the transverse axis reaches the deceleration section outside the wafer area, the longitudinal axis is synchronously controlled to perform a downward switching action; If the total time required for the longitudinal axis to complete the swapping action is greater than the deceleration time of the transverse axis after the first row scan, then when the transverse axis starts the acceleration segment movement of the second row of the wafer, the swapping action that the longitudinal axis has not completed will continue to be executed. For each row from the second row to the second to last row, the horizontal axis enters the constant speed segment after the acceleration segment for scanning. The acceleration segment must synchronously complete the switching operation that was not completed in the previous row. For each row from the second row to the second to last row, when the horizontal axis reaches the deceleration section of that row, the horizontal axis deceleration and vertical axis switching operations are performed simultaneously until the scanning and line changing of that row are completed; When the transverse axis performs a scan on the last line, after completing the scan of the last line in the acceleration section to the constant speed section, it only performs a deceleration action when entering the deceleration section, without performing a line change.

10. A wafer scanning motion control system, characterized in that, The system also includes a memory and a processor. The memory contains a program for a wafer scanning motion control method. When the program for the wafer scanning motion control method is executed by the processor, it performs the following steps: The transverse axis is controlled to accelerate from the starting position to a preset uniform scanning speed, and then enters the wafer area for uniform scanning. When the transverse axis reaches the deceleration section outside the wafer area, the longitudinal axis is synchronously controlled to perform a downward switching action; If the total time required for the longitudinal axis to complete the swapping action is greater than the deceleration time of the transverse axis after the first row scan, then when the transverse axis starts the acceleration segment movement of the second row of the wafer, the swapping action that the longitudinal axis has not completed will continue to be executed. For each row from the second row to the second to last row, the horizontal axis enters the constant speed segment after the acceleration segment for scanning. The acceleration segment must synchronously complete the switching operation that was not completed in the previous row. For each row from the second row to the second to last row, when the horizontal axis reaches the deceleration section of that row, the horizontal axis deceleration and vertical axis switching operations are performed simultaneously until the scanning and line changing of that row are completed; When the transverse axis performs a scan on the last line, after completing the scan of the last line in the acceleration section to the constant speed section, it only performs a deceleration action when entering the deceleration section, without performing a line change.

Images