Semiconductor device

Abstract

The invention provides a semiconductor device capable of suppressing deterioration of assemblability and realizing miniaturization. A semiconductor device includes a base member (1a), a first semiconductor element (2), and a second semiconductor element (3). The planar size of the second semiconductor element is smaller than that of the first semiconductor element. The first semiconductor element and the second semiconductor element are arranged in a first direction (DR1). A first groove (4) is formed in the base member so as to surround the first semiconductor element. A second groove (5) is formed in the base member so as to surround the second semiconductor element. The first groove and the second groove overlap in a region between the first semiconductor element and the second semiconductor element. In a second direction (DR2) which is a direction orthogonal to the first direction, a distance (L2) between portions of the second grooves (5) disposed so as to sandwich the second semiconductor element is smaller than a distance (L1) between portions of the first grooves (4) disposed so as to sandwich the first semiconductor element.

Description

Technical Field

[0001] This disclosure relates to semiconductor devices. Background Technology

[0002] Previously, semiconductor devices were known to bond semiconductor elements on the surface of a substrate using bonding materials such as solder (for example, see Japanese Patent Application Publication No. 2017-098508). Summary of the Invention

[0003] In the semiconductor device disclosed in Japanese Patent Application Publication No. 2017-098508, multiple grooves are formed on the surface of a substrate at the corners facing the semiconductor element, and bonding material is filled into the interior of these grooves. In this semiconductor device, the bonding material is arranged in a manner that allows it to overflow from the grooves in order to fill them. As a result, when the bonding material is melted and the semiconductor element is fixed to the substrate surface, the position of the semiconductor element shifts, and the amount of movement of the semiconductor element (i.e., the amount of shift from the position envisioned in the design) may become larger.

[0004] Thus, when the movement of the semiconductor element increases, the position of the wires bonded to the semiconductor element may shift, causing a short circuit, or the bonding process of the wires relative to the semiconductor element may not be smooth, resulting in a deterioration in the assemblability of the semiconductor device. Moreover, since independent slots are formed for each of the multiple semiconductor elements, there is room for improvement in the miniaturization of the semiconductor device.

[0005] Therefore, the purpose of this disclosure is to provide a semiconductor device that can suppress the deterioration of assembly and achieve miniaturization.

[0006] The semiconductor device according to this disclosure includes a base member, a first semiconductor element, and a second semiconductor element. The base member is made of a conductive material. The first semiconductor element is connected to the base member via a bonding material. The second semiconductor element is connected to the base member via a bonding material. The planar dimensions of the second semiconductor element are smaller than those of the first semiconductor element. The first and second semiconductor elements are arranged in a first direction. A first groove is formed on the base member to surround the first semiconductor element. A second groove is formed on the base member to surround the second semiconductor element. In the region between the first and second semiconductor elements, the first and second grooves overlap. In a second direction, which is orthogonal to the first direction, the distance between the portions of the second groove arranged to sandwich the second semiconductor element is smaller than the distance between the portions of the first groove arranged to sandwich the first semiconductor element. The above and other objects, features, aspects and advantages of the invention will become clear from the following detailed description of the invention, which can be understood with reference to the accompanying drawings. Attached Figure Description

[0007] Figure 1 This is a top view schematic diagram of the semiconductor device involved in Embodiment 1. Figure 2 yes Figure 1 A partially enlarged top view of the semiconductor device shown. Figure 3 yes Figure 2 A cross-sectional view of line segment III-III. Figure 4 yes Figure 2 A cross-sectional view of line segment IV-IV. Figure 5 yes Figure 1 A cross-sectional schematic diagram of the first control wiring of the semiconductor device shown. Figure 6 yes Figure 1 A cross-sectional schematic diagram of the main current wiring of the semiconductor device shown. Figure 7 It means Figure 1 A partial cross-sectional schematic diagram of a first modified example of the semiconductor device shown. Figure 8 It means Figure 1 A partial cross-sectional schematic diagram of a second variant of the semiconductor device shown. Figure 9 It means Figure 1 A partial cross-sectional schematic diagram of a third variant of the semiconductor device shown. Figure 10 It means Figure 1 A partial top view of the fourth variant of the semiconductor device shown. Figure 11 It means Figure 1 A partial top view of the fifth variant of the semiconductor device shown. Figure 12 It means Figure 1 A partial top view of the sixth variant of the semiconductor device shown. Figure 13 This is a partially enlarged top view of the semiconductor device involved in Embodiment 2. Detailed Implementation

[0008] The embodiments of this disclosure will now be described. Furthermore, identical structures will be labeled with the same reference numerals and their descriptions will not be repeated.

[0009] Implementation method 1. <Structure of Semiconductor Devices> Figure 1 This is a top view schematic diagram of the semiconductor device according to Embodiment 1 of this disclosure. Figure 2 yes Figure 1A partially enlarged top view of the semiconductor device shown. Figure 3 yes Figure 2 A cross-sectional view of line segment III-III. Figure 4 yes Figure 2 A cross-sectional view of line segment IV-IV. Figure 5 yes Figure 1 A cross-sectional schematic diagram of the first control wiring of the semiconductor device shown. Figure 6 yes Figure 1 A cross-sectional schematic diagram of the main current wiring of the semiconductor device shown.

[0010] like Figures 1 to 6 As shown, the semiconductor device involved in this disclosure mainly includes a lead frame 1, a first semiconductor element 2, a second semiconductor element 3, a third semiconductor element 6, a first control wiring 9, a second control wiring 10, a main current wiring 11, and resin 12. The lead frame 1 mainly includes a base component 1a, a connecting portion 1b, and a terminal 1c. Figure 1 As shown, a base member 1a is disposed approximately at the center of the lead frame 1. A terminal 1c is disposed on the outer periphery of the lead frame 1. The base member 1a and the terminal 1c are connected by a connecting part 1b. The connecting part 1b is made of a metal member integral with the base member 1a. The connecting part 1b is electrically connected to the terminal 1c. The base member 1a, the connecting part 1b, and the terminal 1c are made of conductive material.

[0011] The first semiconductor element 2 is connected to the base member 1a via a bonding material 15. The second semiconductor element 3 is connected to a region in the base member 1a adjacent to the first semiconductor element 2 via a bonding material 15. Solder can be used, for example, as the bonding material 15. The planar dimensions of the second semiconductor element 3 are smaller than those of the first semiconductor element 2. The first semiconductor element 2 and the second semiconductor element 3 are arranged in a first direction DR1.

[0012] like Figure 1 In the semiconductor device shown, four base members 1a are arranged in the center of the lead frame 1. The four base members 1a are arranged along a second direction DR2 perpendicular to the first direction DR1. A first semiconductor element 2 and a second semiconductor element 3 are respectively connected to three of the four base members 1a. The size of the remaining base member 1a is larger than each of the aforementioned three base members 1a. Three first semiconductor elements 2 and three second semiconductor elements 3 are connected to the remaining base member 1a. That is, in... Figure 1 In the semiconductor device shown, six first semiconductor elements 2 and six second semiconductor elements 3 are connected to the base member 1a.

[0013] A third semiconductor element 6 is connected to other areas of the lead frame 1 adjacent to the base member 1a. Figure 1In the semiconductor device shown, two third semiconductor elements 6 are connected to the lead frame 1. When viewed from the second semiconductor element 3, the third semiconductor elements 6 are located on the opposite side from the first semiconductor element 2.

[0014] The first semiconductor element 2 is, for example, a silicon-based IGBT (Insulated Gate Bipolar Transistor). The second semiconductor element 3 is, for example, a silicon carbide (SiC)-based MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The third semiconductor element 6 is, for example, a driver IC (Integrated Circuit). Alternatively, the first semiconductor element 2, the second semiconductor element 3, and the third semiconductor element 6 can be any type of semiconductor element other than those described above. For example, as the semiconductor material constituting the second semiconductor element 3, silicon (Si) can be used, or compound semiconductor materials such as gallium nitride (GaN) and gallium oxide (Ga2O3) can be used.

[0015] The third semiconductor element 6 controls the first semiconductor element 2 and the second semiconductor element 3. Alternatively, the third semiconductor element 6 can also control either the first semiconductor element 2 or the second semiconductor element 3. The planar dimensions of the second semiconductor element 3 are smaller than those of the first semiconductor element 2.

[0016] A first groove 4 is formed on the base member 1a to surround each of the first semiconductor elements 2. For example... Figure 2 As shown, the first trench 4 is composed of multiple independent trench portions. Specifically, the first trench 4 is composed of first trench portions 4a, 4b, 4c, and 4d. First trench portions 4a, 4b, 4c, and 4d are all straight trenches. The four first trench portions 4a, 4b, 4c, and 4d are respectively arranged opposite to the outer periphery of one of the first semiconductor elements 2, which has a planar quadrilateral shape. The first trench portions 4a, 4b, 4c, and 4d are spaced apart from each other. The first trench portions 4a, 4b, 4c, and 4d are arranged in a quadrilateral planar shape. First trench portions 4a and 4c are formed to extend along a first direction DR1. First trench portions 4b and 4d are formed to extend along a second direction DR2, which is perpendicular to the first direction DR1.

[0017] In addition, such as Figure 1 As shown, when multiple first semiconductor elements 2 are arranged, a portion of the first trench portion constituting the multiple first trenches 4 surrounding these first semiconductor elements 2 may also be shared. For example, as Figure 1As shown, when multiple first semiconductor elements 2 are arranged along the second direction DR2, the first trench 4 surrounding these multiple first semiconductor elements 2 can also be made common to the first trench portions 4b and 4d extending along the second direction DR2. Furthermore, in Figure 1 In the middle, a first slot section 4b (refer to) Figure 2 ) and a first groove section 4d (refer to) Figure 2 It is arranged adjacent to the three first semiconductor elements 2, and thus shared in the three first slots 4.

[0018] In addition, such as Figure 1 As shown, the first trench portion is located between a plurality of first semiconductor elements 2 arranged along the second direction DR2. Figure 2 The first trench portions 4a and 4c can also be common in the plurality of first trenches 4 surrounding the plurality of first semiconductor elements 2. That is, a first trench portion can also be formed between the first semiconductor elements 2 arranged along the second direction DR2 as a common trench portion. In this case, the first trench portion functions as the first trench portion 4a and the first trench portion 4c in two adjacent first trenches 4.

[0019] like Figure 3 As shown, the cross-sectional shape of the section perpendicular to the extension direction of the first groove 4 is V-shaped. A protrusion 41 is formed on the surface of the base member 1a at a position along the outer edge of the first groove 4. The protrusion 41 protrudes from the surface of the base member 1a. From a different viewpoint, the protrusion 41 protrudes from the surface of the base member 1a along a third direction DR3 perpendicular to the first direction DR1 and the second direction DR2. The surface of the protrusion 41 is connected to the inner circumferential surface of the first groove 4.

[0020] like Figure 1 and Figure 2 As shown, a second groove 5 is formed on the base member 1a to surround each of the second semiconductor elements 3. Figure 2 As shown, the second trench 5 is composed of multiple independent trench portions. Specifically, the second trench 5 is composed of four second trench portions 5a, 5b, 5c, and 5d. The second trench portions 5a, 5b, 5c, and 5d are all linear trenches. The four second trench portions 5a, 5b, 5c, and 5d are each arranged opposite an outer periphery of a second semiconductor element 3, which has a planar quadrilateral shape. The second trench portions 5a, 5b, 5c, and 5d are spaced apart from each other. The second trench portions 5a, 5b, 5c, and 5d are arranged such that the planar shape of the second trench 5 is quadrilateral. The second trench portions 5a and 5c are formed to extend along a first direction DR1. The second trench portions 5b and 5d are formed to extend along a second direction DR2.

[0021] like Figure 4As shown, the cross-sectional shape of the section perpendicular to the extension direction of the second groove 5 is V-shaped. A protrusion 51 is formed on the surface of the base member 1a at a position along the outer edge of the second groove 5. The protrusion 51 protrudes from the surface of the base member 1a. The surface of the protrusion 51 is connected to the inner circumferential surface of the second groove 5.

[0022] like Figure 1 and Figure 2 As shown, in the region between the first semiconductor element 2 and the second semiconductor element 3, the first trench 4 and the second trench 5 overlap. That is, the first trench portion 4d and the second trench portion 5d become the same trench, i.e., a common trench portion 14. In addition, since the size of the second trench 5 is smaller than the size of the first trench 4, the ends of the second trench portions 5a and 5c are configured to face the region located inside the end of the common trench portion 14.

[0023] like Figure 2 As shown, the dimensions of the first slot 4 and the second slot 5 are determined according to the dimensions of the first semiconductor element 2 and the second semiconductor element 3. Specifically, in the second direction DR2, which is orthogonal to the first direction DR1, the distance L2 between the second slot portions 5a and 5c arranged to sandwich the second semiconductor element 3 is smaller than the distance L1 between the first slot portions 4a and 4c arranged to sandwich the first semiconductor element 2. This corresponds to the second semiconductor element 3 being narrower than the first semiconductor element 2 in the second direction DR2. From a different perspective, in the second direction DR2, the distances L4 and L6 between the ends 1aa and 1ab of the base member 1a and the second slot 5 are larger than the distances L3 and L5 between the ends 1aa and 1ab of the base member 1a and the first slot 4. That is, the second slot 5 is located further away from the ends 1aa and 1ab of the base member 1a than the first slot 4 (closer to the center of the base member 1a in the second direction DR2).

[0024] Furthermore, in the first direction DR1, the distance L8 between the second trench portions 5b and 5d, which are arranged to sandwich the second semiconductor element 3, is smaller than the distance L7 between the first trench portions 4b and 4d, which are arranged to sandwich the first semiconductor element 2. This corresponds to the fact that the width of the second semiconductor element 3 is narrower than the width of the first semiconductor element 2 in the first direction DR1.

[0025] like Figure 1As shown, a first gate pad 7 is formed on the upper surface of the first semiconductor element 2. A second gate pad 8 is formed on the upper surface of the second semiconductor element 3. The third semiconductor element 6 and the first gate pad 7 of the first semiconductor element 2 are electrically connected via a first control wiring 9. The third semiconductor element 6 and the second gate pad 8 of the second semiconductor element 3 are electrically connected via a second control wiring 10. The first semiconductor element 2 and the second semiconductor element 3 are electrically connected via a main current wiring 11. In addition, the first semiconductor element 2 and the lead frame 1 are electrically connected via the main current wiring 11. In the extending direction of the second control wiring 10, the second semiconductor element 3 is disposed between the first semiconductor element 2 and the third semiconductor element 6.

[0026] like Figure 5 and Figure 6 As shown, the cross-sectional area of ​​the first control wiring 9, which serves as control wiring, is smaller than the cross-sectional area of ​​the main current wiring 11. The cross-sectional area of ​​the second control wiring 10 is equal to the cross-sectional area of ​​the first control wiring 9. Therefore, the cross-sectional area of ​​the second control wiring 10 is smaller than the cross-sectional area of ​​the main current wiring 11.

[0027] like Figure 1 As shown, resin 12 covers a portion of terminal 1c, base member 1a and connecting portion 1b, first semiconductor element 2, second semiconductor element 3, third semiconductor element 6, first control wiring 9, second control wiring 10, and main current wiring 11 in the lead frame 1. Additionally, screw holes 12a for fixing the semiconductor device are formed in the resin 12. The screw holes 12a are positioned to clamp the base member 1a in the second direction DR2. Resin 12 is an insulating resin. The end of terminal 1c protrudes from the resin 12. Terminal 1c is used for electrical connection to the outside of the semiconductor device.

[0028] like Figure 1 As shown, in the first direction DR1, the distance from the connecting portion 1b to the second slot 5 is greater than the distance from the connecting portion 1b to the first slot 4. That is, in the first direction DR1, when viewed from the first slot 4 and the first semiconductor element 2, the second slot 5 and the second semiconductor element 3 are arranged on the side opposite to the connecting portion 1b.

[0029] Furthermore, in the first direction DR1, the distance from the third semiconductor element 6 to the second trench 5 is smaller than the distance from the third semiconductor element 6 to the first trench 4. That is, in the first direction DR1, when viewed from the second trench 5 and the second semiconductor element 3, the third semiconductor element 6 is disposed on the side opposite to the first trench 4 and the first semiconductor element 2.

[0030] <Function> The semiconductor device according to this disclosure includes a base member 1a, a first semiconductor element 2, and a second semiconductor element 3. The base member 1a is made of a conductive material. The first semiconductor element 2 is connected to the base member 1a via a bonding material 15. The second semiconductor element 3 is connected to the base member 1a via the bonding material 15. The planar dimension of the second semiconductor element 3 is smaller than that of the first semiconductor element 2. The first semiconductor element 2 and the second semiconductor element 3 are arranged in a first direction DR1. A first groove 4 is formed in the base member 1a to surround the first semiconductor element 2. A second groove 5 is formed in the base member 1a to surround the second semiconductor element 3. In the region between the first semiconductor element 2 and the second semiconductor element 3, the first groove 4 and the second groove 5 overlap. In a direction orthogonal to the first direction DR1, i.e., a second direction DR2, the distance L2 between the portions of the second groove 5 (second groove portions 5a, 5c) arranged to sandwich the second semiconductor element 3 is smaller than the distance L1 between the portions of the first groove 4 (first groove portions 4a, 4c) arranged to sandwich the first semiconductor element 2.

[0031] Thus, since the first groove 4 and the second groove 5 are formed with dimensions matching the planar dimensions of the first semiconductor element 2 and the second semiconductor element 3, when the first semiconductor element 2 and the second semiconductor element 3 are fixed to the base member 1a via the bonding material 15, it is possible to prevent the molten bonding material 15 from extending outward beyond the first groove 4 or the second groove 5. Therefore, it is possible to suppress excessive displacement of the positions of the first semiconductor element 2 and the second semiconductor element 3 from their designed positions. Therefore, when wiring connections are made to the first semiconductor element 2 and the second semiconductor element 3, it is possible to suppress the problem of wiring connections deviating from their designed positions and causing the wiring to come into contact with each other. That is, wiring connections to the first semiconductor element 2 and the second semiconductor element 3 can be reliably and with high precision, thereby suppressing the deterioration of the assemblability of the semiconductor device.

[0032] In addition, such as Figure 3 and Figure 4 As shown, since protrusions 41 and 51 are formed adjacent to the first groove 4 and the second groove 5, the flow of molten bonding material 15 is also hindered by these protrusions 41 and 51. That is, these protrusions 41 and 51 also help to suppress the expansion of the bonding material 15 to the outside of the first groove 4 or the second groove 5.

[0033] Furthermore, the first trench portion 4d, which is part of the first trench 4, and the second trench portion 5d, which is part of the second trench 5, overlap to form a shared trench portion 14. Since the first trench portion 4d and the second trench portion 5d are shared, the total area occupied by the first trench 4 and the second trench 5 can be reduced compared to the case where the first trench 4 and the second trench 5 are formed independently. Therefore, the semiconductor device can be miniaturized. Additionally, compared to the case where the first trench 4 and the second trench 5 are formed independently, the area occupied by the trenches can be reduced, thus suppressing the decrease in strength of the base member 1a caused by the formation of the first trench 4 and the second trench 5.

[0034] Furthermore, since only one trench portion is formed between the first semiconductor element 2 and the second semiconductor element 3 as a shared trench portion 14, the distance between the first semiconductor element 2 and the second semiconductor element 3 in the first direction DR1 can be reduced compared to the case where the first trench portion 4d and the second trench portion 5d are formed respectively as described above. Here, for example, Figure 1 As shown, consider the case where the third semiconductor element 6 is positioned on the opposite side from the first semiconductor element 2 when viewed from the second semiconductor element 3. Figure 1 The distance between the third semiconductor element 6 and the first semiconductor element 2 in the illustrated semiconductor device is shorter than that in the case where the first trench portion 4d and the second trench portion 5d are formed independently as described above. Therefore, the length of the wiring (first control wiring 9) connecting the third semiconductor element 6 and the first semiconductor element 2 can be designed to be relatively short. As a result, when molding the resin 12, problems such as deformation of the wiring due to the resin 12 injected into the mold can be suppressed. Consequently, the assemblability of the semiconductor device can be improved.

[0035] The aforementioned semiconductor device includes a terminal 1c, a connecting portion 1b, and a resin 12. The connecting portion 1b electrically connects the terminal 1c and the base member 1a. The resin 12 covers the base member 1a and the connecting portion 1b. The resin 12 is an insulating resin. The terminal 1c protrudes from the resin 12. In the first direction DR1, the distance from the connecting portion 1b to the second groove 5 is greater than the distance from the connecting portion 1b to the first groove 4.

[0036] Here, in the semiconductor device manufacturing process, for example, there are cases where wiring such as first control wiring 9 or second control wiring 10 is connected to the first semiconductor element 2 or the second semiconductor element 3 using ultrasonic waves. In this case, it is necessary to position and fix the base member 1a. Therefore, the base member 1a is fixed by partially pressing it with a clamp or other pressing member. In this case, if the base member 1a is pressed at a position far away from the connecting portion 1b, the positioning of the base member 1a can be easily and stably achieved. Therefore, as described above, by arranging a small second groove 5 at a position relatively far from the connecting portion 1b, it is easy to ensure an area for contact between the pressing member and the surface of the base member 1a around the second groove 5 (i.e., the surface portion relatively far from the connecting portion 1b). As a result, the positioning of the base member 1a can be easily achieved.

[0037] In the aforementioned semiconductor device, the base component 1a and the connecting portion 1b are composed of an integral metal component.

[0038] In this case, compared to preparing the base member 1a and the connecting part 1b as separate components, the number of components in the semiconductor device can be reduced. In addition, since it is not necessary to perform the process of connecting the base member 1a and the connecting part 1b as separate components, the number of manufacturing steps can be reduced compared to the case where the base member 1a and the connecting part 1b are separate components.

[0039] In the aforementioned semiconductor device, in the second direction DR2, the distances L4 and L6 between the ends 1aa and 1ab of the base member 1a and the second groove 5 are greater than the distances L3 and L5 between the ends 1aa and 1ab of the base member 1a and the first groove 4.

[0040] Here, when wiring is connected to the first semiconductor element 2 or the second semiconductor element 3 via wire bonding or the like, the base member 1a is pressed and fixed using a pressing member such as a clamp, and the wiring connection process is performed on this basis. At this time, it is preferable to press the base member 1a at two locations where the first semiconductor element 2 or the second semiconductor element 3 is clamped. In the above structure, the portion of the second groove 5 on the second direction DR2 that becomes the location where the second semiconductor element 3 is clamped ( Figure 2 The distances L4 and L6 between the second groove portions 5a and 5c and the ends 1aa and 1ab of the base member 1a become relatively larger. Therefore, at the position where the second groove 5 is clamped in the second direction DR2, the base member 1a can be easily pressed and fixed using the pressing member. As a result, the wiring connection process can be carried out reliably and correctly.

[0041] In the aforementioned semiconductor device, the first groove 4 and the second groove 5 have a V-shaped cross-section. In this case, the first groove 4 and the second groove 5 can be easily formed by pressing a V-shaped mold or the like onto the surface of the base member 1a and plastically processing the surface of the base member 1a.

[0042] The aforementioned semiconductor device includes a third semiconductor element 6. The third semiconductor element 6 controls at least one of the first semiconductor element 2 and the second semiconductor element 3. In the first direction DR1, the distance from the third semiconductor element 6 to the second trench 5 is smaller than the distance from the third semiconductor element 6 to the first trench 4. In the first direction DR1, the distance L8 between the portions of the second trench 5 (second trench portions 5b, 5d) arranged to sandwich the second semiconductor element 3 is smaller than the distance L7 between the portions of the first trench 4 (first trench portions 4b, 4d) arranged to sandwich the first semiconductor element 2.

[0043] In this case, compared to the case where the first semiconductor element 2 and the first slot 4 are arranged at a position relatively close to the third semiconductor element 6 in the first direction DR1, the total length of the wiring (first control wiring 9 and second control wiring 10) connecting the third semiconductor element 6 and the first semiconductor element 2 and the second semiconductor element 3 can be shortened.

[0044] The aforementioned semiconductor device includes a main current wiring 11, a first control wiring 9 serving as control wiring, and a second control wiring 10. A third semiconductor element 6 controls at least one of the first semiconductor element 2 and the second semiconductor element 3. The main current wiring 11 electrically connects the first semiconductor element 2 and the second semiconductor element 3. The first control wiring 9 or the second control wiring 10 electrically connects either the first semiconductor element 2 or the second semiconductor element 3 to the third semiconductor element 6. The cross-sectional area of ​​the first control wiring 9 or the second control wiring 10 is smaller than the cross-sectional area of ​​the main current wiring 11.

[0045] In this case, the first control wiring 9 and the second control wiring 10, which have relatively small cross-sectional areas, are more prone to deformation than the main current wiring 11. Therefore, as described above, by arranging the smaller second semiconductor element 3 and the second slot 5 relatively close to the third semiconductor element 6 in the first direction DR1, the combined length of the first control wiring 9 and the second control wiring 10 is shortened, which is particularly effective from the viewpoint of suppressing deformation of the first control wiring 9 and the second control wiring 10.

[0046] <Structure and Function of Modified Examples> Figure 7 It means Figure 1 A partial cross-sectional schematic diagram of a first modified example of the semiconductor device shown. Figure 7This indicates the cross-section of the joint between the base member 1a and the connecting part 1b. Figure 7 The semiconductor device shown basically includes and Figures 1 to 6 The semiconductor device shown has the same structure and can achieve the same effect, but in lead frame 1 (refer to...) Figure 1 The connection between the base component 1a and the connecting part 1b, which are separate components, is different from the previous method. Figures 1 to 6 The semiconductor device shown.

[0047] exist Figure 7 In the semiconductor device shown, the base member 1a and the connecting portion 1b are separate. The base member 1a and the connecting portion 1b are joined via an alloy layer 16. That is, the base member 1a and the connecting portion 1b are ultrasonically bonded. Alternatively, the base member 1a and the connecting portion 1b can also be joined by solder.

[0048] In this case, since the base member 1a and the connecting part 1b are separate, the thickness and material of the base member 1a and the connecting part 1b can be selected separately. Therefore, the design freedom of the semiconductor device can be increased.

[0049] Figure 8 It means Figure 1 A partial cross-sectional schematic diagram of a second variant of the semiconductor device shown. Figure 8 This indicates the cross-sectional shape of the first groove 4 and the second groove 5. Figure 8 The semiconductor device shown basically includes and Figures 1 to 6 The semiconductor device shown has the same structure and can achieve the same effect, but the cross-sectional shapes of the first trench 4 and the second trench 5 are different. Figures 1 to 6 The semiconductor device shown.

[0050] exist Figure 8 In the semiconductor device shown, the cross-sectional shape of the first trench 4 and the second trench 5 is semi-circular. Even with such a structure, it is still consistent with... Figures 1 to 6 Similarly, the semiconductor device shown can trap molten bonding material 15 in the first trench 4 and the second trench 5. Therefore, it is possible to suppress the expansion of bonding material 15 to the outside of the first trench 4 and the second trench 5. In addition, the first trench 4 and the second trench 5 can be easily formed by pressing a mold or the like with a semi-circular cross-section onto the surface of the base member 1a and plastically processing the surface of the base member 1a.

[0051] Figure 9 It means Figure 1 A partial cross-sectional schematic diagram of a third variant of the semiconductor device shown. Figure 9 and Figure 8 Similarly, this indicates the cross-sectional shape of the first groove 4 and the second groove 5. Figure 9 The semiconductor device shown basically includes and Figures 1 to 6The semiconductor device shown has the same structure and can achieve the same effect, but the cross-sectional shapes of the first trench 4 and the second trench 5 are different. Figures 1 to 6 The semiconductor device shown.

[0052] exist Figure 9 In the semiconductor device shown, the first trench 4 and the second trench 5 have rectangular cross-sectional shapes. Even with such a structure, it is still consistent with... Figures 1 to 6 Similarly, the semiconductor device shown can trap molten bonding material 15 in the first trench 4 and the second trench 5. Therefore, it is possible to suppress the bonding material 15 from expanding outwards into the first trench 4 and the second trench 5. Furthermore, the first trench 4 and the second trench 5 can be easily formed by pressing a mold with a rectangular cross-section onto the surface of the base member 1a and plastically processing the surface of the base member 1a. In addition to the aforementioned semi-circular and rectangular shapes, the cross-sectional shapes of the first trench 4 and the second trench 5 can also be arbitrary shapes such as U-shaped or polygonal.

[0053] Figure 10 It means Figure 1 A partial top view of the fourth variant of the semiconductor device shown. Figure 10 Corresponding to Figure 2 . Figure 10 The semiconductor device shown basically includes and Figures 1 to 6 The semiconductor device shown has the same structure and achieves the same effect, but the planar shapes of the first trench 4 and the second trench 5 are different. Figures 1 to 6 The semiconductor device shown.

[0054] exist Figure 10 In the semiconductor device shown, the first trench 4 is composed of two first trench portions 4a and 4d. The two first trench portions 4a and 4d are arranged spaced apart from each other. The first trench portion 4a is a trench with an L-shaped planar shape. The first trench portion 4d is formed by connecting straight portions 14a, 14b, and 14c. The portions 14a and 14b are connected to form an L-shaped planar shape. The portion 14a is disposed between the first semiconductor element 2 and the second semiconductor element 3. The portion 14b is connected to the end of the portion 14a and extends along the first direction DR1. The ends of the portions 14a and 14b located on the opposite side of the connection between the portions 14a and 14b are positioned opposite to the ends of the first trench portion 4a. The first trench portion 4a, and portions 14a and 14b of the first trench portion 4d, which are shared trench portions 14, are arranged opposite to the outer periphery of the first semiconductor element 2.

[0055] exist Figure 10In the semiconductor device shown, the second trench 5 is composed of two second trench portions 5a and 5d. The two second trench portions 5a and 5d are arranged spaced apart from each other. The second trench portion 5a is an L-shaped trench. The second trench portion 5d is a common trench portion 14 where portions 14a, 14b, and 14c are connected. Portion 14c is connected to the end away from portion 14a (the end opposite to the end connected to portion 14b). Portion 14c extends along a first direction DR1. The portion of portion 14a that is away from the connection portion of portions 14a and 14b, and the end of portion 14c (the end opposite to the end connected to portion 14a), are arranged opposite to the end of the second trench portion 5a. The second trench portion 5a, portions 14a and 14c of the second trench portion 5d as the common trench portion 14 are arranged opposite to the outer periphery of the second semiconductor element 3.

[0056] The first groove 4 and the second groove 5, with this structure, can also trap the molten bonding material 15 in the first groove 4 and the second groove 5. Therefore, it is possible to suppress the expansion of the bonding material 15 to the outside of the first groove 4 and the second groove 5.

[0057] Figure 11 It means Figure 1 A partial top view of the fifth variant of the semiconductor device shown. Figure 11 Corresponding to Figure 2 . Figure 11 The semiconductor device shown basically includes and Figures 1 to 6 The semiconductor device shown has the same structure and achieves the same effect, but the planar shapes of the first trench 4 and the second trench 5 are different. Figures 1 to 6 The semiconductor device shown.

[0058] exist Figure 11 In the semiconductor device shown, the first trench 4 is an annular trench. The first trench 4 is composed of interconnected first trench portions 4a and 4d. The planar shape of the first trench portion 4a is U-shaped, consisting of straight sections. The planar shape of the first trench portion 4d is straight. The first trench portion 4d is a shared trench portion 14. The first trench portion 4d is disposed between the first semiconductor element 2 and the second semiconductor element 3. The end of the first trench portion 4a is connected to the end of the first trench portion 4d. The first trench 4 is an annular trench with a rectangular planar shape.

[0059] exist Figure 11In the semiconductor device shown, the second trench 5 is an annular trench. The second trench 5 is composed of second trench portions 5a and 5d. The planar shape of the second trench portion 5a is a U-shape composed of straight sections. The planar shape of the second trench portion 5d is straight. The first trench portion 5d is a shared trench portion 14. The second trench portion 5d is the same as the first trench portion 4d. The end of the second trench portion 5a is connected to the portion away from the end of the second trench portion 5d. The second trench 5 is an annular trench with a rectangular planar shape.

[0060] The first groove 4 and the second groove 5, with this structure, can also trap the molten bonding material 15 in the first groove 4 and the second groove 5. Therefore, it is possible to suppress the expansion of the bonding material 15 to the outside of the first groove 4 and the second groove 5.

[0061] Figure 12 It means Figure 1 A partial top view of the sixth variant of the semiconductor device shown. Figure 12 Corresponding to Figure 2 . Figure 12 The semiconductor device shown basically includes and Figures 1 to 6 The semiconductor device shown has the same structure and achieves the same effect, but the planar shapes of the first trench 4 and the second trench 5 are different. Figures 1 to 6 The semiconductor device shown.

[0062] exist Figure 12 In the illustrated semiconductor device, a plurality of first trench portions are arranged around one outer periphery of a first semiconductor element 2. Specifically, the first trench 4 is composed of eight linear trenches, namely first trench portions 4a, 4b, 4c, 4d, 4e, 4f, 4g, and 4h. The eight first trench portions 4a, 4b, 4c, 4d, 4e, 4f, 4g, and 4h are arranged spaced apart from each other. The first trench portions 4a and 4b are arranged linearly along a first direction DR1. The first trench portions 4a and 4b are arranged opposite one outer periphery of the first semiconductor element 2. The first trench portions 4c and 4d are arranged linearly along a second direction DR2. The ends of the first trench portions 4b and 4c are arranged opposite each other with a spaced interval. The first trench portions 4c and 4d are arranged opposite the other outer periphery of the first semiconductor element 2.

[0063] The first trench portions 4e and 4f are arranged in a straight line along the first direction DR1. When viewed from the first semiconductor element 2, the first trench portions 4e and 4f are positioned on the side opposite to the first trench portions 4a and 4b. The end of the first trench portion 4d is positioned opposite the end of the first trench portion 4e at a distance. The first trench portions 4e and 4f are positioned opposite another portion on the outer periphery of the first semiconductor element 2.

[0064] The first trench portions 4g and 4h are arranged in a straight line along the second direction DR2. The first trench portions 4g and 4h are a common trench portion 14. The first trench portions 4g and 4h are disposed between the first semiconductor element 2 and the second semiconductor element 3. The end of the first trench portion 4g (the end on the side opposite to the inner end of the first trench portion 4h) is opposite to the end of the first trench portion 4f. The end of the first trench portion 4h (the end on the side opposite to the inner end of the first trench portion 4g) is opposite to the end of the first trench portion 4a. The first trench portions 4a, 4b, 4c, 4d, 4e, 4f, 4g, and 4h are arranged opposite to the outer periphery of the first semiconductor element 2.

[0065] exist Figure 12 In the illustrated semiconductor device, a plurality of second trench portions are arranged around one outer periphery of a second semiconductor element 3. Specifically, the second trench 5 consists of eight linear trenches, namely second trench portions 5a, 5b, 5c, 5d, 5e, 5f, 5g, and 5h. The eight second trench portions 5a, 5b, 5c, 5d, 5e, 5f, 5g, and 5h are arranged spaced apart from each other. Second trench portions 5a and 5b are arranged linearly along a first direction DR1. Second trench portions 5a and 5b are arranged opposite one outer periphery of the second semiconductor element 3. Second trench portions 5c and 5d are arranged linearly along a second direction DR2. The ends of second trench portions 5b and 5c are arranged opposite each other with a spaced interval. Second trench portions 5c and 5d are arranged opposite the other outer periphery of the second semiconductor element 3.

[0066] The second trench portions 5e and 5f are arranged in a straight line along the first direction DR1. When viewed from the second semiconductor element 3, the second trench portions 5e and 5f are positioned on the side opposite to the second trench portions 5a and 5b. The end of the second trench portion 5d is positioned opposite the end of the second trench portion 5e at a distance. The second trench portions 5e and 5f are positioned opposite another portion on the outer periphery of the second semiconductor element 3.

[0067] The second trench portions 5g and 5h are arranged in a straight line along the second direction DR2. The second trench portions 5g and 5h are a common trench portion 14. The second trench portions 5g and 5h are disposed between the first semiconductor element 2 and the second semiconductor element 3. The region of the end of the second trench portion 5g away from the end of the second trench portion 5g (the end on the side opposite to the inner end of the second trench portion 5h) is opposite to the end of the second trench portion 5f. The region of the end of the second trench portion 5h away from the end of the second trench portion 5h (the end on the side opposite to the inner end of the second trench portion 5g) is opposite to the end of the second trench portion 5a. The second trench portions 5a, 5b, 5c, 5d, 5e, 5f, 5g, and 5h are arranged opposite to the outer periphery of the second semiconductor element 3.

[0068] The first groove 4 and the second groove 5, with this structure, can also trap the molten bonding material 15 in the first groove 4 and the second groove 5. Therefore, it is possible to suppress the expansion of the bonding material 15 to the outside of the first groove 4 and the second groove 5.

[0069] Implementation method 2. <Structure of Semiconductor Devices> Figure 13 This is a partially enlarged top view of the semiconductor device involved in Embodiment 2. Figure 13 Corresponding to Figure 2 . Figure 13 The semiconductor device shown basically includes and Figures 1 to 6 The semiconductor device shown has the same structure and can achieve the same effect, but the relative positional relationship between the first slot 4 and the first semiconductor element 2, and the second slot 5 and the second semiconductor element 3 is different. Figures 1 to 6 The semiconductor device shown.

[0070] exist Figure 13 In the semiconductor device shown, the center positions of the second trench 5 and the second semiconductor element 3 on the second direction DR2 are offset from the center positions of the first trench 4 and the first semiconductor element 2 on the second direction DR2. Specifically, the position of the first trench portion 4a on the second direction DR2 coincides with the position of the second trench portion 5a. In addition, the position of the outer periphery of the first semiconductor element 2 opposite to the first trench portion 4a on the second direction DR2 coincides with the position of the outer periphery of the second semiconductor element 3 opposite to the second trench portion 5a.

[0071] Therefore, in the second direction DR2, the distance L4 between the end 1aa of the base member 1a and the second groove 5, and the distance L3 between the end 1aa of the base member 1a and the first groove 4 become approximately equal. On the other hand, the distance L6 between the end 1ab of the base member 1a and the second groove 5 becomes larger than the distance L5 between the end 1ab of the base member 1a and the first groove 4. Furthermore, as... Figure 13 As shown, distance L6 is different from distance L4. Specifically, distance L6 becomes larger than distance L4. Therefore, the area of ​​the base member 1a located to the right of the second groove 5 in the second direction DR2 is larger than the area of ​​the base member 1a located to the left of the second groove 5.

[0072] <Function> In the semiconductor device described above, in the second direction DR2, the distance L4 between one end 1aa of the base member 1a and the second groove 5 is different from the distance L6 between the other end 1aa of the base member 1a and the second groove 5.

[0073] Here, when wiring is connected to the first semiconductor element 2 or the second semiconductor element 3 via wire bonding or the like, the base member 1a is pressed and fixed using a pressing member such as a clamp, and the wiring connection process is performed on this basis. At this time, depending on the shape and other conditions of the base member 1a, sometimes it is only necessary to press the base member 1a at one point. In addition, for example, if there is sufficient space between one of the two ends 1aa, 1ab of the base member 1a and the second groove 5, sometimes it is not a problem to bring the second groove 5 close to the other of the two ends 1aa, 1ab of the base member 1a.

[0074] In the above structure, in the second direction DR2, one of the two regions located outside the portion of the second trench 5 that forms the position sandwiching the second semiconductor element 3 has a relatively larger area. Therefore, in this region with a larger area (e.g., Figure 13 The base member 1a can be pressed and fixed by a pressing member in the area to the right of the second groove 5. As a result, compared with ensuring space for pressing the base member 1a by a pressing member in the two areas sandwiching the second semiconductor element 3, the design freedom of the semiconductor device can be increased.

[0075] It should be considered that the embodiments disclosed herein are illustrative and not restrictive in all respects. At least two of the embodiments disclosed herein may be combined, provided they do not contradict each other. The basic scope of this disclosure is defined by the scope of the claims, and not by the foregoing description; furthermore, the basic scope of this disclosure is intended to include all modifications within the scope of the claims and their equivalent meaning.

Claims

1. A semiconductor device, characterized in that, include: A base component made of a conductive material; A first semiconductor element is connected to the base member via a bonding material; as well as A second semiconductor element, which is connected to the base member via a bonding material, has a smaller planar dimension than the first semiconductor element. The first semiconductor element and the second semiconductor element are arranged in a first direction. A first groove is formed on the base member to surround the first semiconductor element. A second groove is formed on the base member to surround the second semiconductor element. In the region between the first semiconductor element and the second semiconductor element, the first trench overlaps with the second trench. In a second direction, which is orthogonal to the first direction, the distance between the portions of the second groove arranged to sandwich the second semiconductor element is smaller than the distance between the portions of the first groove arranged to sandwich the first semiconductor element.

2. The semiconductor device as claimed in claim 1, characterized in that, include: terminal; A connecting portion that electrically connects the terminal and the base component; as well as An insulating resin covers the base component and the connecting portion. The terminal protrudes from the resin. In the first direction, the distance from the connecting portion to the second groove is greater than the distance from the connecting portion to the first groove.

3. The semiconductor device as claimed in claim 2, characterized in that, The base component and the connecting part are together. The base component and the connecting portion are joined by solder or alloy layer.

4. The semiconductor device as claimed in claim 2, characterized in that, The base component and the connecting part are constructed by an integral metal component.

5. The semiconductor device according to any one of claims 1 to 4, characterized in that, In the second direction, the distance between the end of the base member and the second groove is greater than the distance between the end of the base member and the first groove.

6. The semiconductor device according to any one of claims 1 to 5, characterized in that, In the second direction, the distance between one end of the base member and the second groove is different from the distance between the other end of the base member and the second groove.

7. The semiconductor device according to any one of claims 1 to 6, characterized in that, The cross-sectional shape of the first groove and the second groove is V-shaped.

8. The semiconductor device according to any one of claims 1 to 7, characterized in that, Includes a third semiconductor element that controls at least one of the first semiconductor element and the second semiconductor element. In the first direction, the distance from the third semiconductor element to the second trench is smaller than the distance from the third semiconductor element to the first trench. In the first direction, the distance between the portions of the second trench configured to sandwich the second semiconductor element is smaller than the distance between the portions of the first trench configured to sandwich the first semiconductor element.

9. The semiconductor device as claimed in claim 8, characterized in that, include: The main current wiring electrically connects the first semiconductor element and the second semiconductor element. as well as Control wiring electrically connects either the first semiconductor element or the second semiconductor element to the third semiconductor element. The cross-sectional area of ​​the control wiring is smaller than that of the main current wiring.

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