Two-dimensional perovskite semi-floating gate all-optical memory

Abstract

The application relates to a two-dimensional perovskite semi-floating gate type all-optical control memory, which is mainly used for efficient storage and information processing. The memory comprises a substrate as the lowermost layer; two-dimensional perovskite nanosheets are selected as a photosensitive floating gate layer and are arranged on the upper surface of the substrate; a dielectric layer is arranged on the photosensitive floating gate layer and serves as a charge protection layer; a material with semiconductor properties is selected and arranged on the upper surface of the second dielectric layer and the photosensitive floating gate layer and serves as a channel layer; electrodes are arranged at both ends of the channel layer. Through efficient light absorption and carrier separation characteristics of the two-dimensional perovskite material and in combination with a photo-generated charge capture mechanism of the semi-floating gate structure, data writing, erasing and reading can be completed only by relying on optical signals, and energy consumption is reduced; meanwhile, the thin film characteristics of the two-dimensional perovskite make it easy to be integrated with flexible electronics and optoelectronics, and provide the possibility for high-density and multifunctional memory devices.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor device technology, and particularly relates to a fully optically controlled memory based on a two-dimensional perovskite semi-floating gate. Background Technology

[0002] In recent years, with the rapid development of information technology, the demand for high-performance, low-power memory has been increasing. Traditional memories, such as Dynamic Random Access Memory (DRAM), Flash memory, and Resistive Random Access Memory (RRAM), face challenges in terms of speed, power consumption, integration density, and stability. In particular, traditional floating-gate memories rely on electrical signals for data writing and erasing, resulting in high power consumption, slow response speed, and limited durability. Furthermore, electrical signal operations can also cause crosstalk and thermal effects, limiting further increases in storage density.

[0003] All-optical-controlled memories have become a research hotspot in novel storage technologies due to their contactless operation, low power consumption, high speed, and parallel processing capabilities. However, existing optically controlled memories (such as devices based on phase change materials, organic semiconductors, or traditional oxide semiconductors) typically face problems such as low photoresponse sensitivity, narrow storage windows, and insufficient stability. Furthermore, traditional optical storage materials have limited photoelectric conversion efficiency and are difficult to achieve non-volatile storage characteristics, restricting their application in high-speed, high-density storage fields.

[0004] Two-dimensional perovskite materials have shown great potential in optoelectronic devices due to their excellent optoelectronic properties (such as high absorption coefficient, long carrier diffusion length, and tunable bandgap). However, existing two-dimensional perovskite-based memories mostly employ electric field modulation, failing to fully utilize their photoresponse advantages. Furthermore, the application of traditional floating gate structures in optically controlled memory still faces challenges such as interface defects, low charge trapping efficiency, and insufficient long-term stability. Summary of the Invention

[0005] The purpose of this invention is to provide a fully optically controlled memory based on a two-dimensional perovskite semi-floating gate, so as to solve at least one of the technical problems mentioned in the background art.

[0006] Specifically, the fully optically controlled memory based on a two-dimensional perovskite semi-floating gate proposed in this invention includes: a substrate, wherein the substrate is located at the bottom layer;

[0007] A photosensitive floating gate layer, wherein the photosensitive floating gate layer is located on the upper surface of the substrate;

[0008] Furthermore, the all-optical-controlled memory also has an insulating dielectric layer, which is partially placed on the upper surface of the photosensitive floating gate layer as a charge protection layer;

[0009] The channel layer is partially disposed on the upper surface of the insulating dielectric layer and partially disposed on the upper surface of the photosensitive floating gate layer not covered by the insulating dielectric layer;

[0010] An electrode is disposed on the channel layer.

[0011] Furthermore, the photosensitive floating gate layer is a two-dimensional perovskite nanosheet, and the channel layer is a semiconductor material;

[0012] The fully optically controlled memory is manufactured using the following methods:

[0013] S1: Synthesis of two-dimensional perovskite RPP single crystals by a slow cooling method;

[0014] S2: Preparation of PDMS elastomer material by thermosetting molding method;

[0015] S3: A few-layer two-dimensional perovskite single-crystal nanosheet was prepared by mechanical exfoliation combined with PDMS transfer technology to obtain a photosensitive floating gate layer;

[0016] S4: Perovskite nanosheets on PDMS elastomer material are precisely transferred to a substrate, and then hBN and MoS2 nanosheets are stacked to form a heterostructure. Finally, gold electrodes are deposited to form a heterojunction device. The substrate is the bottommost layer; hBN is the insulating dielectric layer; and MoS2 nanosheets are the channel layer.

[0017] S5: Perform optical storage performance testing on the fabricated heterojunction device to complete the fabrication.

[0018] In this system, the substrate is a substrate, the two-dimensional perovskite single-crystal nanosheets are photosensitive floating gate layers, hBN is an insulating dielectric layer, and MoS2 nanosheets are channel layers.

[0019] Compared to other optoprogrammable memories, this invention enables dual-optical modulation of positive and negative optical response behavior without gate voltage assistance and possesses non-volatile characteristics. Compared to other reported optoprogrammable memories, this invention enables optically modulated multi-bit storage.

[0020] Preferably, S1: synthesizing two-dimensional perovskite RPP single crystals by a slow cooling method, specifically:

[0021] S11: Weigh 150 mg of lead oxide (PbO), 30 mg of benzylamine iodide (BAI) and 105 mg of methylamine iodide (MAI) powder and place them in a flat-bottomed reaction flask;

[0022] S12: Add 1 mL of hydroiodic acid HI solution and 0.075 mL of hypophosphoric acid reducing agent H3PO2, place the mixture on a magnetic stirrer, and stir continuously for 1 hour at a constant temperature of 110℃.

[0023] S13: After the reaction is complete, transfer the reaction flask to a silicone oil bath preheated to 110°C and slowly cool it to room temperature at a rate of 3°C per hour.

[0024] S14: Obtain two-dimensional perovskite RPP single crystal product and dry it in a vacuum environment at 45℃ for 12 hours.

[0025] Preferably, step S2: preparing PDMS elastomer material by thermosetting molding method, specifically:

[0026] S21: Weigh 15g of component A into a clean beaker, then slowly add 1.5g of component B using a precision pipette, ensuring even addition. Preferably, component A is a base polymer, the main component of which is a vinyl-terminated PDMS prepolymer, such as vinyl-terminated polydimethylsiloxane, which forms the main backbone of PDMS. Optionally, it contains fillers, such as silica nanoparticles, to improve mechanical properties or adjust viscosity. Component B is a curing agent / crosslinking agent + catalyst, the main components of which include: Crosslinking agent: typically a hydrosilicone oil, such as methylhydrosiloxane-dimethylsiloxanecopolymer, whose Si-H bonds crosslink with the vinyl groups in glue A through hydrosilylation. Catalyst: a platinum (Pt) complex, such as Karstedt catalyst, to accelerate the reaction. It may contain inhibitors, such as alkynyl alcohols, to prolong the working time.

[0027] S22: Place the mixture on a magnetic stirrer and stir at a constant speed for 20 minutes until fully mixed. At this time, a large number of bubbles will be generated in the system.

[0028] S23: Pour the mixture evenly into the petri dish and let it stand until it naturally levels out; the air bubbles will then disappear.

[0029] S24: Transfer the petri dish to an 80℃ constant temperature oven for heat curing treatment for 1 hour to obtain fully cured PDMS elastomer material.

[0030] Preferably, step S3: preparing few-layer two-dimensional perovskite single-crystal nanosheets by mechanical exfoliation combined with PDMS transfer technology, specifically includes:

[0031] S31: Select MoS2, boron nitride and two-dimensional perovskite crystals with smooth surfaces and paste them onto the surface of the tape respectively; preferably, select a single-layer MoS2 crystal with a surface roughness of <0.2nm.

[0032] Approximately 5×5mm in size 2 Two-dimensional perovskite single crystals (such as (BA)2(MA)3Pb4I) 13It is pasted side by side with MoS2 onto the surface of Nitto SPV 224 tape.

[0033] S32: Repeatedly folding and tearing the tape achieves crystal thinning; preferably, this is repeated more than 10 times. Under a microscope, rainbow-colored interference fringes appear on the tape surface. Preferably, the thickness after the kth peeling is: t k =t0 / 2 k (t0 is the initial thickness). After 15 peels, the thickness changes from 50 μm to about 1.5 nm (theoretically 3-5 layers).

[0034] S33: Cut a small piece of PDMS substrate, cover it on the surface of the peeled tape and press gently to ensure full contact between the two;

[0035] S34: Rapidly exfoliate the PDMS substrate to obtain few-layer two-dimensional perovskite single-crystal nanosheets. Under an optical microscope, nanosheets of varying thickness can be observed on the substrate surface. Those exhibiting a translucent grayish-white characteristic are few-layer nanostructure materials.

[0036] This process, through tape pre-thinning and PDMS interface energy modulation, achieves non-destructive and controllable layer transfer of two-dimensional perovskite nanosheets, providing an ideal material platform for quantum optical devices.

[0037] Preferably, S4 specifically includes:

[0038] S41: Positioning a PDMS elastomer material loaded with few-layer two-dimensional perovskite single-crystal nanosheets above a substrate;

[0039] S42: After the PDMS elastomer material has made close contact with the substrate, the PDMS elastomer material is slowly peeled off in a gradient deceleration manner;

[0040] S43: Pre-screened small-area hBN nanosheets are stacked on the surface of hBN and perovskite layers, so that half of the MoS2 nanosheets are on the hBN surface and the other half are on the perovskite surface.

[0041] S44: The heterojunction device is fabricated by depositing a 50nm thick gold electrode through a metal mask using a vacuum evaporation process.

[0042] Preferably, the step S42, which involves slowly peeling off the PDMS elastomer material using a gradient deceleration method, further includes:

[0043] During the exfoliation process, the exfoliation rate drops below 0.1 mm / s in the vicinity of the nanosheet region.

[0044] Preferably, in step S5: the optical storage performance of the fabricated heterojunction device is tested, and at least the following performance is achieved:

[0045] The heterojunction device can achieve dual-light modulation of positive and negative light response behavior without gate voltage assistance, and has non-volatile characteristics.

[0046] Compared with the prior art, the present invention has the following beneficial effects:

[0047] This invention enables dual-optical modulation of positive and negative optical response behavior without gate voltage assistance and possesses non-volatile characteristics. Compared with other existing optoelectronic memories, it can achieve optically modulated multi-bit storage. Specifically, this invention utilizes the efficient light absorption and carrier separation characteristics of two-dimensional perovskite materials, combined with the photogenerated charge trapping mechanism of a semi-floating gate structure, to achieve data writing, erasing, and reading relying solely on optical signals, avoiding the electrical signal interference and power consumption problems of traditional electronically controlled memories.

[0048] Furthermore, the fully optically controlled operation avoids the high-voltage programming / erasing process of traditional floating gate memories, reducing energy consumption; at the same time, the thin-film characteristics of two-dimensional perovskites make them easy to integrate with flexible electronics and optoelectronics, enabling high-density, multi-functional memory devices. Attached Figure Description

[0049] Figure 1 This is a structural diagram of the fully optically controlled memory based on a two-dimensional perovskite semi-floating gate as described in this embodiment.

[0050] Figure 2 This is the performance test result of the fully optically controlled memory described in this embodiment.

[0051] Figure 3 The fully optically controlled memory described in this embodiment achieves optically modulated multi-bit storage performance.

[0052] Wherein, 1-substrate; 2-photosensitive floating gate layer; 3-insulating dielectric layer; 4-channel layer; 5-electrode. Detailed Implementation

[0053] Example 1, as Figure 1 As shown, the fully optically controlled memory based on a two-dimensional perovskite semi-floating gate proposed in this invention includes:

[0054] Substrate 1, which is located at the bottom layer;

[0055] Photosensitive floating gate layer 2, the photosensitive floating gate layer 2 being located on the upper surface of the substrate 1;

[0056] The fully optically controlled memory also includes an insulating dielectric layer 3, which is partially placed on the upper surface of the photosensitive floating gate layer 2 as a charge protection layer.

[0057] The channel layer 4 is partially disposed on the upper surface of the insulating dielectric layer 3 and partially disposed on the upper surface of the photosensitive floating gate layer 2 that is not covered by the insulating dielectric layer 3.

[0058] Electrode 5 is disposed on the channel layer 4. Preferably, the electrode is disposed on both sides of the upper surface of the channel layer.

[0059] A semiconductor material is selected and placed on the upper surface of the insulating dielectric layer and the photosensitive floating gate layer to serve as the channel layer 5. Specifically, the channel 5 is partially disposed on the upper surface of the insulating dielectric layer 4 and partially disposed on the upper surface of the photosensitive floating gate layer 3, which is not covered by the second insulating dielectric layer 4. This configuration allows the structure to achieve dual-channel collaborative operation: a direct contact channel (perovskite-molybdenum sulfide interface) enables efficient photogenerated charge transfer without gate voltage assistance. Simultaneously, the floating gate storage channel protects the charge from dissipation, extending the storage time. Furthermore, the use of molybdenum sulfide (MoS2) in this application provides a good charge transfer interface, resulting in suitable bandgap matching. The perovskite exhibits strong light absorption capabilities, efficiently exciting charges.

[0060] By directly controlling charge transfer and storage through dual-photoexcitation, the dependence of traditional transistors on gate voltage is eliminated. Integration of floating and non-floating gate regions enables rapid charge transfer (dynamic response) in the uncovered BN region. The BN-covered region forms a floating gate, achieving non-volatile storage (static retention). Furthermore, different wavelengths of light can selectively excite perovskite or molybdenum sulfide, enabling flexible control of positive / negative persistent photoresponse.

[0061] As can be seen, the fully optically controlled memory provided in this application requires no external gate voltage; charge transfer and storage can be completed solely through photoexcitation. The floating gate structure (BN isolation) significantly reduces charge leakage and extends storage time. Programmable optoelectronic storage logic can be realized by adjusting illumination conditions (such as wavelength and intensity). It can be applied as an optically controlled non-volatile memory (such as optical neuromorphic devices) and as an adaptive optoelectronic sensor (integrating dynamic response and static storage).

[0062] Preferably, the substrate can be selected from materials such as silica, copper indium gallium selenide (CIGS) substrates, etc. Other materials can also be selected based on photoelectric properties, electrical properties, thermal stability, and compatibility with other layers; no limitation is imposed.

[0063] It should be noted that the photosensitive floating gate layer, employing two-dimensional perovskite single-crystal nanosheets, exhibits superior crystal quality and photoelectric properties compared to conventional perovskite nanoparticles. It shows significant advantages, particularly in regulating charge storage, enhancing the photoelectric effect, and improving external field modulation. Furthermore, compared to other materials, two-dimensional perovskite single crystals do not require consideration of lattice matching, thus offering greater flexibility in stacking and integration. This flexibility allows for seamless integration with other materials in heterostructures, forming a variety of high-performance devices.

[0064] Preferably, the all-optical-controlled memory described in this application is manufactured using the following methods:

[0065] S1: Synthesis of two-dimensional perovskite RPP single crystals by a slow cooling method;

[0066] Preferably, S1 specifically comprises:

[0067] S11: Weigh 150 mg of lead oxide (PbO), 30 mg of benzylamine iodide (BAI), and 105 mg of methylamine iodide (MAI) powder and place them in a flat-bottomed reaction flask;

[0068] S12: Add 1 mL of hydroiodic acid (HI) solution and 0.075 mL of hypophosphorous acid reducing agent (H3PO2). Place the mixture on a magnetic stirrer and stir continuously at a constant temperature of 110°C for 1 hour. The hydroiodic acid (HI) solution helps dissolve the solid raw material to form a homogeneous solution. Furthermore, it can react with PbO to generate lead iodide precursors. The hypophosphorous acid reducing agent (H3PO2) prevents Pb... 2+ Oxidation to Pb 4+ ; generated Pb 0 Re-oxidized to Pb by HI 2+ This forms a dynamic protective cycle. In this application, a temperature of 110℃, slightly lower than the boiling point of HI (127℃), is selected to ensure the reaction rate while preventing volatilization.

[0069] S13: After the reaction is complete, transfer the reaction flask to a silicone oil bath preheated to 110°C and slowly cool it to room temperature at a rate of 3°C per hour; when the temperature is close to the perovskite precipitation point (about 80°C), slow cooling allows the solute to accumulate in an orderly manner in a near-equilibrium state.

[0070] S14: Two-dimensional perovskite RPP single crystal product was obtained and dried in a vacuum environment at 45℃ for 12 hours. The organic chain rearrangement under vacuum environment improved the superlattice order.

[0071] S2: Preparation of PDMS elastomer material by thermosetting molding method;

[0072] Preferably, S2 specifically includes:

[0073] S21: Weigh 15 grams of component A into a clean beaker, and then slowly add 1.5 grams of component B using a precision pipette, ensuring that the addition is even;

[0074] S22: Place the mixture on a magnetic stirrer and stir at a constant speed for 20 minutes until fully mixed. At this time, a large number of bubbles will be generated in the system.

[0075] S23: Pour the mixture evenly into the petri dish and let it stand until it naturally levels out; the bubbles will then disappear. The complete elimination of bubbles can be confirmed by observing the restoration of the mirror-like gloss on the liquid surface.

[0076] S24: Transfer the petri dish to an 80℃ constant temperature oven for heat curing for 1 hour to obtain fully cured PDMS elastomer material. After heat curing, the elastomer can be bent 180° without cracks, and the reaction enthalpy ΔH is completely released at 80℃.

[0077] S3: Few-layer two-dimensional perovskite single-crystal nanosheets were prepared by mechanical exfoliation combined with PDMS transfer technology;

[0078] Preferably, S3 specifically includes:

[0079] S31: Select MoS2, boron nitride and two-dimensional perovskite crystals with flat surfaces and attach them to the surface of the tape respectively; ensure that the crystals can be firmly attached to the tape to facilitate subsequent thin-layer operations.

[0080] S32: Repeatedly folding and tearing the tape achieves crystal thinning; during the repeated tearing of the tape, the surface of MoS2 and two-dimensional perovskite crystals gradually becomes thinner until a few layers of two-dimensional nanosheets are obtained.

[0081] S33: Cut a small piece of PDMS substrate, cover it on the surface of the peeled tape and press gently to ensure full contact between the two; ensure that the crystal thin layer can firmly adhere to the PDMS substrate during the subsequent transfer process.

[0082] S34: Rapidly exfoliate the PDMS substrate to obtain few-layer two-dimensional perovskite single-crystal nanosheets, in which the two-dimensional perovskite single-crystal nanosheets are translucent grayish-white.

[0083] S4: Perovskite nanosheets on PDMS elastomer material are precisely transferred to the substrate, and then hBN and MoS2 nanosheets are stacked to form a heterostructure. Finally, gold electrodes are deposited to form a heterojunction device.

[0084] Preferably, S4 specifically includes:

[0085] S41: Positioning a PDMS elastomer material loaded with few-layer two-dimensional perovskite single-crystal nanosheets on a substrate;

[0086] S42: After the PDMS elastomer material has made close contact with the substrate, the PDMS elastomer material is slowly peeled off using a gradient deceleration method; preferably, during the peeling process, the peeling rate drops to below 0.1 mm / s near the nanosheet region. This slow peeling process ensures that the perovskite nanosheets can be transferred intact and accurately to the substrate surface without damage or breakage of the crystals during peeling. By controlling the peeling speed, the structural integrity of the perovskite nanosheets can be maintained, improving transfer efficiency and quality.

[0087] Preferably, gradient deceleration stripping can be performed:

[0088] Stage 1: 10mm / s (peel angle 30°), overcoming strong adhesion of PDMS to the substrate.

[0089] Stage 2: 1 mm / s (peel angle 60°), matching PDMS-perovskite adhesion.

[0090] Stage 3: 0.1 mm / s (peel angle 90°, suitable for weak adhesion to perovskite substrate).

[0091] S43: After successful exfoliation of the PDMS elastomer material, pre-selected, smaller-area hBN nanosheets are stacked on the surfaces of the hBN and perovskite layers, so that half of the MoS2 nanosheets are on the hBN surface and the other half on the perovskite surface. This step requires precise selection of the size and shape of the MoS2 nanosheets to ensure that they can be uniformly stacked on the surface of the perovskite single crystal layer, thereby forming a good heterostructure. The number of stacked layers and the arrangement of the MoS2 nanosheets have a significant impact on the performance of the heterojunction device, so the specific operation can be carried out according to the requirements and is not limited here.

[0092] S44: Using a vacuum evaporation process, a 50nm thick gold electrode is deposited through a metal mask, which enables efficient and precise bonding of perovskite nanosheets and MoS2 nanosheets. The gold electrode deposition process ensures good contact between the electrode and the nanostructure, ultimately forming a heterojunction device with excellent performance.

[0093] S5: Perform electrical storage and broadband optoelectronic storage performance tests on the prepared heterojunction device to complete the preparation.

[0094] Preferably, step S5 uses a semiconductor analyzer to test the electrical storage and broadband optoelectronic storage performance of the fabricated heterojunction device, achieving at least the following performance:

[0095] Specifically, after performance testing, the results were as follows: Figure 2-3 As shown.

[0096] from Figure 2 a and Figure 2As can be clearly seen in b, under zero gate voltage conditions, when a source-drain voltage of -5V to +5V is applied to the device, the current at 5V is on the order of 8*10. -9 A. When a 405nm light pulse is applied to the device for 10 seconds, the device current increases to 2*10 under the same test conditions. -6 A. The device exhibits persistent positive photoconductive response behavior. Data writing operations can be performed, and when a 660nm light pulse is applied to the device for 10 seconds, the current of the device decreases to 9*10 under the same test conditions. -10 A exhibits persistent negative photoconductivity response behavior, enabling data erasure.

[0097] from Figure 3 It can be clearly seen that the device has lower optical programming power consumption and multi-bit storage capability.

[0098] In summary, the technical solution of the fully optically controlled memory based on a two-dimensional perovskite semi-floating gate and its fabrication method provided by this invention can achieve fully optically controlled non-volatile memory.

[0099] By leveraging the efficient light absorption and carrier separation characteristics of two-dimensional perovskite materials, combined with the photogenerated charge capture mechanism of a semi-floating gate structure, data writing, erasing, and reading can be accomplished solely using optical signals, avoiding the electrical signal interference and power consumption problems of traditional electronically controlled memory.

[0100] Further reducing power consumption and increasing integration, the all-optical control operation avoids the high-voltage programming / erasing process of traditional floating gate memories, thus reducing energy consumption; at the same time, the thin-film characteristics of two-dimensional perovskites make them easy to integrate with flexible electronics and optoelectronics, enabling high-density, multi-functional memory devices.

[0101] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claimed invention. The scope of protection claimed by the appended claims and their equivalents is defined.

Claims

1. A fully optically controlled memory based on a two-dimensional perovskite semi-floating gate, comprising: Substrate (1), which is located at the bottom layer; A photosensitive floating gate layer (2) is located on the upper surface of the substrate (1); characterized in that: An insulating dielectric layer (3) is also provided, which is partially placed on the upper surface of the photosensitive floating gate layer (2) as a charge protection layer; The channel layer (4) is partially disposed on the upper surface of the insulating dielectric layer (3) and partially disposed on the upper surface of the photosensitive floating gate layer (2) not covered by the insulating dielectric layer (3); Electrode (5), the electrode (5) is disposed on the channel layer (4); The photosensitive floating gate layer (2) is a two-dimensional perovskite RPP single crystal nanosheet, the insulating dielectric layer (3) is hBN, and the channel layer (4) is a MoS2 nanosheet.

2. The fully optically controlled memory based on a two-dimensional perovskite semi-floating gate as described in claim 1, characterized in that: The photosensitive floating gate layer (2) is a two-dimensional perovskite nanosheet, and the channel layer (4) is a semiconductor material; The fabrication method of the fully optically controlled memory is as follows: S1: Synthesis of two-dimensional perovskite RPP single crystals by a slow cooling method; S2: Preparation of PDMS elastomer material by thermosetting molding method; S3: A few-layer two-dimensional perovskite single-crystal nanosheet was prepared by mechanical exfoliation combined with PDMS transfer technology to obtain a photosensitive floating gate layer (2). S4: Perovskite nanosheets on PDMS elastomer material are precisely transferred to the substrate, and then hBN and MoS2 nanosheets are stacked in sequence to form a heterostructure. Finally, gold electrodes are deposited to form a heterojunction device. Among them, the substrate is the substrate (1), the two-dimensional perovskite single crystal nanosheets are the photosensitive floating gate layer (2), hBN is the insulating dielectric layer (3), and MoS2 nanosheets are the channel layer (4). S5: Perform optical storage performance testing on the fabricated heterojunction device to complete the fabrication.

3. The fully optically controlled memory based on a two-dimensional perovskite semi-floating gate as described in claim 2, characterized in that, S1: Synthesizing two-dimensional perovskite RPP single crystals via a slow cooling method, specifically: S11: Weigh 150 mg of lead oxide (PbO), 30 mg of benzylamine iodide (BAI), and 105 mg of methylamine iodide (MAI) powder and place them in a flat-bottomed reaction flask; S12: Add 1 mL of hydroiodic acid HI solution and 0.075 mL of hypophosphoric acid reducing agent H3PO2, place the mixture on a magnetic stirrer, and stir continuously for 1 hour at a constant temperature of 110℃. S13: After the reaction is complete, transfer the reaction flask to a silicone oil bath preheated to 110°C and slowly cool it to room temperature at a rate of 3°C per hour. S14: Obtain two-dimensional perovskite RPP single crystal product and dry it in a vacuum environment at 45℃ for 12 hours.

4. The fully optically controlled memory based on a two-dimensional perovskite semi-floating gate as described in claim 3, characterized in that, S2: The PDMS elastomer material is prepared by thermosetting molding method, specifically as follows: S21: Weigh 15g of component A into a clean beaker, then slowly add 1.5g of component B using a precision pipette, ensuring even addition; where component A is the base polymer; component B is a curing agent or crosslinking agent + catalyst; S22: Place the mixture on a magnetic stirrer and stir at a constant speed for 20 minutes until fully mixed. At this time, a large number of bubbles will be generated in the system. S23: Pour the mixture evenly into the petri dish and let it stand until it naturally levels out; the air bubbles will then disappear. S24: Transfer the petri dish to an 80℃ constant temperature oven for heat curing treatment for 1 hour to obtain fully cured PDMS elastomer material.

5. The fully optically controlled memory based on a two-dimensional perovskite semi-floating gate as described in claim 4, characterized in that, S3: The preparation of few-layer two-dimensional perovskite single-crystal nanosheets via mechanical exfoliation combined with PDMS transfer technology specifically includes: S31: Select MoS2, boron nitride and two-dimensional perovskite RPP single crystals with flat surfaces, and paste them onto the surface of the tape respectively; S32: Repeatedly folding and tearing the tape achieves crystal thinning; S33: Cut a small piece of PDMS substrate, cover it on the surface of the peeled tape and press gently to ensure full contact between the two; S34: Rapidly exfoliate the PDMS substrate to obtain few-layer two-dimensional perovskite single-crystal nanosheets, in which the two-dimensional perovskite single-crystal nanosheets are translucent grayish-white.

6. The fully optically controlled memory based on a two-dimensional perovskite semi-floating gate as described in claim 5, characterized in that, S4 specifically includes: S41: Positioning a PDMS elastomer material loaded with few-layer two-dimensional perovskite single-crystal nanosheets on a substrate; S42: After the PDMS elastomer material has made close contact with the substrate, the PDMS elastomer material is slowly peeled off in a gradient deceleration manner; S43: Pre-screened small-area MoS2 nanosheets are stacked on the surface of hBN and perovskite layers, so that half of the MoS2 nanosheets are on the hBN surface and the other half are on the perovskite surface. S44: The heterojunction device is fabricated by depositing a 50nm thick gold electrode through a metal mask using a vacuum evaporation process.

7. The fully optically controlled memory based on a two-dimensional perovskite semi-floating gate according to claim 6, characterized in that, The step S42, which involves slowly peeling off the PDMS elastomer material using a gradient deceleration method, also includes: During the exfoliation process, the exfoliation rate drops below 0.1 mm / s in the vicinity of the nanosheet region.

8. The fully optically controlled memory based on a two-dimensional perovskite semi-floating gate according to claim 7, characterized in that, Step S5: Perform optical storage performance testing on the prepared heterojunction device, achieving at least the following performance: The heterojunction device can achieve dual-light modulation of positive and negative light response behavior without gate voltage assistance, and has non-volatile characteristics.

9. The fully optically controlled memory based on a two-dimensional perovskite semi-floating gate according to claim 8, characterized in that, The gold electrode has a thickness of 50±5nm and is formed by vacuum evaporation using a metal mask.

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