Method for processing high-k materials to reduce leakage current and increase capacitance

Abstract

Particular embodiments described herein relate to systems and methods of processing high-k materials for forming MIM capacitors. Various high-density plasma nitriding processes or combinations of high-density plasma oxidation processes and high-density plasma nitriding processes are provided.

Description

Technical Field

[0001] Specific embodiments of this disclosure generally relate to metal-insulator-metal (“MIM”) capacitors in integrated circuits. More specifically, specific embodiments of this disclosure relate to methods for treating high-k materials using high-density free radicals. Background Technology

[0002] A capacitor is a component in a semiconductor device, and depending on its size and / or the number of capacitors on the die, it can occupy a considerable area on the semiconductor die. An example of a capacitor used in semiconductor memory devices is a metal-insulator-metal (MIM) capacitor. Traditional MIM capacitors are two-dimensional (2D). A 2D MIM capacitor has two face-to-face metal plates that are planar, substantially parallel to each other and parallel to the substrate. One way to increase the capacitance of a MIM capacitor is to increase the size of the metal plates. However, increasing the size of the metal plates consumes more surface area of ​​the substrate. Three-dimensional (3D) MIM capacitors can achieve the same capacitance value with less substrate surface area. However, the performance of a 3D MIM capacitor will decrease if leakage current occurs between the two metal plates.

[0003] In a capacitor, a dielectric layer is typically placed between two electrodes. This dielectric layer is used to store charge when the display device is operating. For use in display devices, capacitors preferably have a high capacitance value. Therefore, capacitors can be formed using high-k dielectric materials. When the dielectric layer is formed from a material with a high k dielectric constant, the capacitance value of the resulting capacitor increases. However, some properties of high-k dielectric materials, such as oxygen pores, grain boundaries, and impurities, can increase leakage current and decrease the dielectric constant.

[0004] Therefore, improved methods are needed to suppress leakage current and maintain a high dielectric constant in high-k materials. Summary of the Invention

[0005] Specific embodiments of this disclosure generally relate to metal-insulator-metal (“MIM”) capacitors in integrated circuits. More specifically, specific embodiments of this disclosure relate to methods for treating high-k materials using high-density free radicals.

[0006] In one or more embodiments of this disclosure, a plasma processing method is provided. The method includes receiving a substrate stack into a processing chamber, the substrate stack including a high-k dielectric layer formed on metal electrodes. The method further includes injecting a processing gas into a gas injection channel defined between a gas injection insert and a sidewall of a plasma source. The method further includes generating an inductively coupled plasma within the gas injection channel, an induction coil disposed near the sidewall and horizontally overlapping the gas injection channel. The plasma includes at least one nitrogen radical substance. The method further includes transporting the plasma from the plasma source to a processing chamber coupled thereto, wherein the plasma flows through a separation grid disposed between the plasma source and the substrate stack to be processed. The method further includes processing the substrate stack within the processing chamber, wherein processing the substrate stack includes contacting the plasma including at least one nitrogen radical substance with the high-k dielectric layer facing the separation grid and heating the substrate stack using a plurality of lamps located on a second side of the substrate stack opposite the separation grid.

[0007] Specific embodiments may include one or more of the following. Specific embodiments may include one or more of the following. After plasma processing of the substrate stack, the method further includes introducing oxygen-containing gas into a gas injection channel of a plasma source; generating oxygen plasma within the gas injection channel, wherein the oxygen plasma includes oxygen free radicals; transporting the oxygen plasma from the plasma source to a processing chamber; and processing the substrate stack with oxygen plasma in the processing chamber, wherein processing the substrate stack includes contacting the oxygen plasma including oxygen free radicals with a high-k dielectric layer facing a separation grid; and heating the substrate stack using a plurality of lamps located on a second side of the substrate stack opposite the separation grid. The substrate stack is processed within the processing chamber, forming one or more nitrogen-containing diffusion barrier layers within the substrate stack. One or more diffusion barrier layers are formed within a high-k dielectric layer. One or more diffusion barrier layers are formed at the interface between the high-k dielectric layer and a metal electrode. The high-k dielectric layer includes zirconium oxide, hafnium oxide, or a combination of zirconium oxide and hafnium oxide. The metal electrode includes a metal nitride, the metal being selected from titanium (Ti), molybdenum (Mo), tungsten (W), or tantalum (Ta). The high-k dielectric layer is formed by atomic layer deposition (ALD) process.

[0008] In one or more embodiments, a plasma processing method is provided. The method includes receiving a substrate stack into a processing chamber, the substrate stack including a high-k dielectric layer formed on metal electrodes. The method further includes injecting a processing gas into a gas injection channel defined between a gas injection insert and a sidewall of a plasma source. The method further includes generating an inductively coupled plasma within the gas injection channel, an induction coil disposed near the sidewall and horizontally overlapping the gas injection channel, wherein the plasma includes at least one oxygen radical substance. The method further includes delivering plasma from a plasma source to a processing chamber coupled thereto, wherein the plasma flows through a separation grid disposed between the plasma source and the substrate stack to be processed. The method further includes processing the substrate stack in the processing chamber, wherein processing the substrate stack includes contacting the plasma including at least one oxygen radical substance with the high-k dielectric layer facing the separation grid; and heating the substrate stack using a plurality of lamps located on a second side of the substrate stack opposite the separation grid.

[0009] Specific embodiments may include one or more of the following. After plasma treatment of the substrate stack, the method further includes introducing a nitrogen-containing gas into a gas injection channel of a plasma source; generating a nitrogen plasma within the gas injection channel, wherein the nitrogen plasma includes nitrogen radicals; transporting the nitrogen plasma from the plasma source to a processing chamber; and treating the substrate stack with nitrogen plasma within the processing chamber, wherein treating the substrate stack includes: contacting the nitrogen plasma including nitrogen radicals with a high-k dielectric layer facing a separation grid; and heating the substrate stack using a plurality of lamps located on a second side of the substrate stack relative to the separation grid. Treating the substrate stack with nitrogen plasma forms one or more nitrogen-containing diffusion barrier layers within the substrate stack. One or more diffusion barrier layers are formed within the high-k dielectric layer. One or more diffusion barrier layers are formed at the interface between the high-k dielectric layer and a metal electrode. The high-k dielectric layer includes zirconium oxide, hafnium oxide, or a combination of zirconium oxide and hafnium oxide. The metal electrode includes a metal nitride, the metal being selected from titanium (Ti), molybdenum (Mo), tungsten (W), or tantalum (Ta). The high-k dielectric layer is formed by an atomic layer deposition (ALD) process.

[0010] In one or more embodiments, a plasma processing system is provided. The system includes a processing chamber defining a processing space; a plasma source; a gas injection insert disposed within the plasma source; a gas injection channel defining a gas injection channel between the gas injection insert and a sidewall of the plasma source; an induction coil disposed near the sidewall and horizontally overlapping the gas injection channel; a separation grid separating the plasma source from the processing space; and a system controller. The system controller includes a memory for storing computer-readable instructions and a processor coupled to the memory, configured by the computer-readable instructions to perform a plurality of operations when executing those instructions. The plurality of operations includes introducing a processing gas into the gas injection channel; generating an inductively coupled plasma within the gas injection channel using the induction coil, wherein the plasma includes at least one nitrogen radical substance; transporting the plasma from the plasma source to the processing space, wherein the plasma flows through the separation grid; and processing a substrate stack within the processing space, the substrate stack including a high-k dielectric layer formed on metal electrodes. Processing the substrate stack includes contacting the plasma including at least one nitrogen radical substance with the high-k dielectric layer facing the separation grid and heating the substrate stack using a plurality of lamps located on a second side of the substrate stack opposite the separation grid.

[0011] Specific embodiments may include one or more of the following. Multiple operations further include introducing oxygen-containing gas into a gas injection channel of a plasma source; generating oxygen plasma within the gas injection channel, wherein the oxygen plasma includes oxygen free radicals; transporting the oxygen plasma from the plasma source to a processing space; and processing a substrate stack with oxygen plasma within the processing space, wherein processing the substrate stack includes contacting the oxygen plasma including oxygen free radicals with a high-k dielectric layer facing a separation grid, and heating the substrate stack using multiple lamps located on a second side of the substrate stack opposite the separation grid. The substrate stack is processed within the processing space, forming one or more nitrogen-containing diffusion barrier layers within the substrate stack. The high-k dielectric layer comprises zirconium oxide, hafnium oxide, or a combination of zirconium oxide and hafnium oxide, and the metal electrode comprises a metal nitride selected from titanium (Ti), molybdenum (Mo), tungsten (W), or tantalum (Ta).

[0012] In another specific embodiment, instructions are stored on a non-transitory computer-readable medium, which, when executed by a processor, cause a program to perform the operations of the aforementioned device and / or method. Attached Figure Description

[0013] To gain a detailed understanding of the above features of this disclosure, reference can be made to specific embodiments for a more detailed description. The specific embodiments have been briefly summarized above, and some of these embodiments are illustrated in the accompanying drawings. However, it should be noted that the drawings only illustrate exemplary embodiments and should not be considered as limiting their scope, but rather can accommodate other equally effective embodiments.

[0014] Figure 1 This is a system schematic diagram based on one or more specific embodiments described herein.

[0015] Figure 2 This is a flowchart describing a method for processing a high-k dielectric layer according to one or more specific embodiments described herein.

[0016] Figures 3A-3C Views are shown illustrating the various stages of forming a semiconductor structure according to one or more specific embodiments described herein.

[0017] Figure 4 This is a flowchart describing a method for processing a high-k dielectric layer according to one or more specific embodiments described herein.

[0018] Figures 5A-5C Views are shown illustrating the various stages of forming a semiconductor structure according to one or more specific embodiments described herein.

[0019] For ease of understanding, the same component symbols are used as much as possible to label common components in the figures. Elements and features of one specific embodiment can be beneficially incorporated into other specific embodiments without further description. Detailed Implementation

[0020] The specific embodiments described herein relate to systems and methods for processing high-k materials used to form MIM capacitors.

[0021] In the formation of MIM capacitors, carbon impurities, oxygen vacancies within the high-k dielectric material, and the cross-diffusion of impurities between materials have always been major problems. These impurities increase leakage current and reduce dielectric constant, thereby deteriorating the characteristics of the MIM capacitor. In traditional MIM capacitor formation processes, there is currently no specific treatment to reduce oxygen vacancies and grain boundary traps caused by crystallization in high-k materials; post-heat annealing is the only option to increase crystallinity.

[0022] To significantly improve the reduction in leakage current and dielectric constant of MIM capacitors, various high-density plasma nitriding processes or combinations of high-density plasma oxidation and high-density plasma nitriding processes are provided. These processes help reduce leakage current and increase capacitance in MIM capacitors. They remove oxygen vacancies in the high-k layer, prevent interface layer thickness increase by forming a nitriding layer between the high-k layer and the electrode layer, form a barrier layer to prevent interdiffusion of impurities in the high-k layer and the electrode layer, and enhance the crystallinity of the high-k layer without post-deposition annealing.

[0023] In one or more embodiments, and in conjunction with other embodiments, a plasma processing process is provided, including plasma nitriding of a high-k dielectric material. Applying plasma nitriding to a high-k dielectric material can: (i) increase the crystallinity of the high-k dielectric material through its relatively high temperature, such as a heater temperature in the range of about 400°C to about 600°C, and / or a relatively high-temperature plasma gas; (ii) further passivate oxygen vacancies generated by high-density nitrogen radicals; and (iii) form a diffusion barrier layer that blocks oxidants from subsequent high-k dielectric material deposition and / or subsequent heat treatment, thereby increasing the k-value and further suppressing leakage current. Furthermore, plasma nitriding at relatively high temperatures, such as above 400°C, can sufficiently improve the crystallinity of the high-k dielectric material, thereby eliminating the need for the previously used additional heat treatment steps.

[0024] In one or more embodiments (which may be combined with other embodiments), a dual-process plasma treatment is provided, comprising plasma oxidation followed by plasma nitriding of a high-k material. Compared to plasma nitriding alone, the dual treatment of plasma oxidation (PO) followed by plasma nitriding (PN) on a high-k dielectric material can further improve the crystallinity of the high-k dielectric and further reduce leakage current. Applying plasma oxidation can (i) remove carbon impurities in the high-k dielectric material through a chemical reaction between carbon and high-density oxygen radicals; and (ii) passivate oxygen vacancies with high-density oxygen radicals, ultimately increasing the k-value by increasing the crystallinity in the high-k dielectric material and reducing leakage current by removing traps. However, to prevent or reduce oxidation of the lower electrode, the plasma oxidation process temperature must be lower than the high-dielectric-constant deposition temperature, for example, in the range of about 150°C to about 350°C or about 250°C to about 350°C. Subsequent plasma nitriding can: (i) increase the crystallinity of high-k dielectric materials through relatively high temperatures, such as heater temperatures in the range of about 400°C to about 600°C, and / or relatively high-temperature plasma gases; (ii) further passivate oxygen vacancies generated by high-density nitrogen radicals; and (iii) form a diffusion barrier layer that blocks oxidants from subsequent additional high-k dielectric material deposition and / or heat treatment, ultimately increasing the k-value and further suppressing leakage current. Furthermore, performing plasma nitriding at relatively high temperatures (e.g., 350°C or higher) can sufficiently enhance the crystallinity of high-k dielectric materials, thereby eliminating the need for the previously used additional heat treatment steps.

[0025] In one or more specific embodiments, and in conjunction with other specific embodiments, a dual-process plasma process is provided, comprising plasma nitriding followed by plasma oxidation on a high-k material. Applying plasma nitriding can: (i) increase the crystallinity of the high-k dielectric material through relatively high temperatures, such as heater temperatures of 400°C or higher and / or relatively high temperatures in the plasma gas; (ii) further passivate oxygen vacancies due to high-density nitrogen radicals; and (iii) form a diffusion barrier layer that blocks oxidants from subsequent high-k dielectric material deposition and heat treatment, ultimately increasing the k-value and further suppressing leakage current. Furthermore, applying plasma nitriding can further nitrid the interface between the bottom electrode and the bulk high-k dielectric material, which may help suppress the increase in reaction layer caused by bottom electrode oxidation that may occur during subsequent plasma oxidation. Subsequent plasma oxidation can: (i) remove carbon impurities from the high-k dielectric material through a chemical reaction between carbon and high-density oxygen radicals; and (ii) passivate oxygen vacancies with high-density oxygen radicals, ultimately increasing the k-value by increasing the crystallinity of the high-k dielectric material and reducing leakage current by removing traps. However, to prevent oxidation of the lower electrode, it needs to be used at temperatures below the high k deposition temperature, for example, in the range of about 150°C to about 350°C or about 250°C to about 350°C.

[0026] Figure 1 This is a schematic diagram of a plasma processing system according to one or more specific embodiments of the present disclosure. The plasma processing system 100 includes a processing chamber 110 and a plasma source 120 (e.g., a distal plasma source) coupled to the processing chamber 110. The processing chamber 110 also includes a substrate support 112 for holding a substrate 114. The processing chamber 110 defines a processing space 111 between the plasma source 120 and the substrate support 112. The substrate support 112 may be located near one or more heat sources (e.g., a plurality of lamps 176) that provide heat to the substrate during processing within the processing chamber 110. The plurality of lamps 176 are disposed between a window 162 and a bottom wall of the processing chamber 110. The substrate support 112 is disposed between a separation grid 116 and the window 162.

[0027] Plasma source 120 includes dielectric sidewalls 122. Plasma source 120 includes a top cover 124. Dielectric sidewalls 122 and top cover 124 are integrated with a gas injection insert 140, defining a plasma source interior 125. Dielectric sidewalls 122 may include any suitable dielectric material, such as quartz. Induction coil 130 is disposed near (e.g., adjacent to) the dielectric sidewalls 122 of plasma source 120. Induction coil 130 is coupled to RF power generator 134 via any suitable matching network 132. Feed gas is introduced from gas supplier 150 into plasma source interior 125. Plasma is generated in plasma source 120 when induction coil 130 is energized with RF power from RF power generator 134. To improve efficiency, plasma processing system 100 includes a gas injection insert 140 disposed within plasma source interior 125. Gas injection insert 140 includes one or more gas injection channels 151. Gas injection channel 151 supplies processing gas to the plasma source interior 125 through active region 172. Due to the enhanced enclosure of the thermionic electrons, a reaction occurs between the thermionic electrons and the feed gas. Induction coil 130 overlaps at least partially horizontally with gas injection channel 151.

[0028] Plasma can be generated in plasma source 120 (e.g., in plasma generation region) by induction coil 130. Target particles flow from plasma source 120 through holes 126 provided in separation grid 116 to the surface of substrate 114. Separation grid 116 isolates plasma source 120 from processing chamber 110 (downstream region). Separation grid 116 is configured to isolate processing chamber 111 from plasma charged particles (ions and electrons), which recombine on separation grid 116, so that only neutral plasma material can enter the processing space 111 of processing chamber 110 through separation grid 116.

[0029] In some specific embodiments, the induction coil 130 is aligned with the active region 172 such that the top coil of the induction coil 130 is located above the bottom edge 180 or bottom surface of the gas injection insert 140, essentially operating within the active region 172 of the cavity, while the bottom coil of the induction coil 130 is located below the bottom edge 180, essentially operating outside the active region 172. The center of the induction coil 130 is substantially aligned with the bottom edge 180. Within these boundaries, the position of the induction coil 130 can be adjusted according to the effectiveness of the target material.

[0030] In some specific embodiments, the plasma source 120 is formed by utilizing a suitably sized gas injection insert 140 (and a top cover 124, which may be a pre-formed portion of the gas injection insert 140), thereby aligning the bottom edge 180 along axis 184 with a portion of the induction coil 130 (e.g., coil loop 182). Alternatively, with the remainder of the gas injection insert 140 stationary (e.g., fixed) as part of the plasma source 120, the bottom edge 180 can be moved relative to the plasma source 120 in a vertical direction V1 to align the bottom edge 180 with a portion of the induction coil 130. For example, a mechanism can be coupled to any suitable portion of the gas injection insert 140 to adjust the position of the bottom edge 180, thereby adjusting a portion of the gas injection insert 140 having a first length (L1) to a second length (L2).

[0031] The substrate 114 can be positioned in the processing chamber directly below the separation grid 116 and at a certain distance from the separation grid 116. Neutral particles from the plasma source 120 can flow downward through the separation grid 116 to the substrate 114 in the processing chamber 110. The neutral particles can contact the substrate 114 to perform a processing process, such as a surface treatment process.

[0032] The plasma processing system 100 also includes a system controller 190 for controlling the processing procedures performed by the plasma processing system 100. The system controller 190 can be any type of controller used in an industrial environment, such as a programmable logic controller (PLC). The system controller 190 includes a processor 192, a memory 194, and input / output (I / O) circuitry 196. The system controller 190 may further include one or more components (not shown), such as one or more power supplies, clocks, communication components (such as network interface cards), and a user interface typically found in controllers made of semiconductor components.

[0033] Memory 194 may include nontransitory memory. Nontransitory memory may be used to store computer-readable instructions, programs, and settings as described below. Memory 194 may include one or more readily available memory types, such as read-only memory (ROM) (e.g., electronically erasable programmable read-only memory (EEPROM), cache, floppy disk, hard disk), or random access memory (RAM) (e.g., nonvolatile random access memory (NVRAM)).

[0034] Processor 192 is coupled to memory. Processor 192 is configured by computer-readable instructions or programs stored in memory 194, which perform multiple operations when executed by processor 192, for example, referring to... Figure 2The method 200 includes multiple operations. During the execution of these instructions or programs, the system controller 190 can communicate with I / O devices via I / O circuitry 196. For example, during the execution of these programs and communication via I / O circuitry 196, the system controller 190 can control outputs (e.g., plasma source 120, radio frequency power generator 134, gas delivery system from gas supplier 150). The memory 194 may further include various operational settings for controlling the plasma processing system 100. For example, these settings may include temperature and pressure settings, as well as settings for controlling gas delivery from the gas sources described herein.

[0035] A method is provided for treating a substrate using a plasma processing system 100 with high-density free radicals. In some embodiments, the substrate comprises a high-k material, such as a high-k dielectric material used to form capacitors. In some embodiments, the high-k material of the substrate comprises ZrO2 or a combination of ZrO2 and HfO2.

[0036] In some embodiments, the plasma treatment system 100 can be used to perform plasma nitriding treatment on a substrate using high-density nitrogen radicals. In some embodiments, the plasma nitriding process can increase the crystallinity of the substrate and reduce oxygen vacancies. In some embodiments, the plasma nitriding process can form one or more nitrided layers on the substrate.

[0037] In some embodiments, the plasma processing system 100 can be used to perform plasma oxidation treatment on a substrate with a high density of oxygen radicals. In some embodiments, the plasma oxidation process can reduce impurities and oxygen vacancies in the substrate.

[0038] In some embodiments, the plasma processing system 100 can be used to sequentially perform plasma nitriding and plasma oxidation processes simultaneously on a substrate. In some embodiments, the plasma nitriding process can be performed first, followed by the plasma oxidation process. In other embodiments, the plasma oxidation process can be performed first, followed by the plasma nitriding process.

[0039] Figure 2 This is a flowchart describing a method 200 for processing a high-k dielectric layer according to one or more specific embodiments of the present disclosure. Figures 3A-3C Views are shown illustrating the various stages of forming a semiconductor structure according to one or more specific embodiments described herein. Although Figures 3A-3C It is described in conjunction with method 200, but Figures 3A-3C The structure disclosed herein is not limited to method 200, but can be independent of method 200. Similarly, although method 200 is combined with... Figures 3A-3C The method described, but not limited to, method 200 Figures 3A-3CThe structure is not publicly available, but can be independent of... Figures 3A-3C The publicly disclosed structure. It should be understood that... Figures 3A-3C This is only a regional schematic diagram of the semiconductor device structure 300. The semiconductor device structure 300 may include any number of transistor portions and additional material having the state shown in the figure. The semiconductor device structure 300 may be a MIM capacitor. It should also be noted that, although Figure 2 The method 200 shown is described sequentially, but includes one or more operations that have been omitted and / or added, and / or other process sequences that have been rearranged in another ideal order, all of which are within the scope of the disclosure provided herein.

[0040] In operation 210, the substrate stack 304 is received. The substrate stack 304 can be positioned in... Figure 1 The plasma processing system 100 shown is mounted on a substrate support 112. The substrate stack 304 may be or includes Figure 1 The substrate 114 shown. (Refer to...) Figure 3A The substrate stack 304 includes a lower electrode 306 and a high-k dielectric layer 308 formed on the lower electrode 306. The substrate stack 304 may further include a substrate 312, such as a polysilicon substrate, on which the lower electrode 306 is formed.

[0041] The lower electrode 306 is or comprises a metal nitride material. The lower electrode 306 can be made of any suitable metal such as titanium (Ti), molybdenum (Mo), tungsten (W), or tantalum (Ta). In one or more embodiments, and in combination with other embodiments, the lower electrode 306 is or comprises TiN. The lower electrode 306 can be formed on the substrate 312 by any suitable process. In one or more embodiments, the lower electrode 306 is formed as a metal by a physical vapor deposition (PVD) process, and then exposed to nitrogen plasma to form a metal nitride. The thickness of the lower electrode 306 can range from about 50 angstroms to about 5,000 angstroms.

[0042] like Figure 3AAs shown, a high-k dielectric layer 308 is formed on or above the lower electrode 306. The high-k dielectric layer 308 is made of any suitable dielectric material with a k value of 20 or higher, such as zirconium oxide (ZrO2), aluminum oxide (Al2O3), titanium dioxide (TiO2), hafnium dioxide (HfO2), or zinc hafnium oxide (HfZO) (a combination of HfO and ZrO2). In some embodiments, the high-k dielectric layer 308 is a multilayer stack comprising at least one layer of high-k dielectric material. In one embodiment, the high-k dielectric layer 308 comprises a ZrO2 layer and a silicon nitride (SiN) layer. In another embodiment, the high-k dielectric layer 308 comprises a layer of high-k dielectric material sandwiched between two dielectric layers. The k value of the high-k dielectric layer 308 ranges from about 20 to about 50. The thickness of the high-k dielectric layer 308 may be greater than or equal to 50 angstroms. The thickness of the high-k dielectric layer 308 can range from about 50 angstroms to about 500 angstroms. The high-k dielectric layer 308 can be formed on or over the substrate 312 by any suitable process. In one or more specific embodiments, the high-k dielectric layer 308 is formed by an atomic layer deposition (ALD) process. The ALD process can be performed at deposition temperatures below 400°C, for example, in the range of about 150°C to about 350°C, or in the range of about 250°C to about 350°C. The thickness of the lower electrode 306 can range from about 50 angstroms to about 5,000 angstroms.

[0043] In one or more specific embodiments, the precursors used for depositing the high-k dielectric layer 308 include zirconium-containing precursors and oxygen-containing precursors. Suitable zirconium-containing precursors include zirconium organometallic precursors such as tetra(ethylmethylamino)zirconium (TEMAZ), tris(dimethylamino)cyclopentadiene zirconium (C5H5)Zr[N(CH3)2]3, or the like. Suitable oxygen-containing precursors include H2O, O2, O3, H2O2, CO2, NO2, N2O, or the like.

[0044] The substrate stack 304 may further include a reaction layer 310 formed at the interface between the lower electrode 306 and the high-k dielectric layer 308. The reaction layer 310 may be formed by oxidation of the lower electrode 306.

[0045] When operating 220, such as Figure 3BAs shown, a high-k dielectric layer 308 is exposed to a high-density plasma nitriding process. Exposure to the high-density nitriding process can form one or more nitriding layers or diffusion barrier layers 322, 324 within the substrate stack 304. Diffusion barrier layers 322, 324 can reduce or prevent the diffusion of oxidants generated from subsequent additional high-k layer deposition and / or thermal processing into the high-k dielectric layer 308 and the electrode 306, thereby suppressing the increase in the size of the reaction layer 310. In one or more embodiments, a diffusion barrier layer, such as diffusion barrier layer 324, is formed at the interface between the high-k dielectric layer 308 and the lower electrode 306. In one or more embodiments, a diffusion barrier layer, such as diffusion barrier layer 322, is formed on the upper surface or inside the high-k dielectric layer 308. The thickness of the diffusion barrier layers 322, 324 can range from about 5 angstroms to about 30 angstroms, for example, about 5 angstroms to about 25 angstroms, about 10 angstroms to about 25 angstroms, about 10 angstroms to about 20 angstroms, or about 10 angstroms to about 20 angstroms. In some specific embodiments, one or more diffusion barrier layers 322, 324 can be formed by exposing a high-k dielectric layer 308 to a first free radical, such as a nitrogen free radical.

[0046] Reference Figure 1 When the plasma processing system 100 disclosed herein is used, a plasma comprising a first free radical is formed in the active region 172 within the plasma source interior 125. For example, a gas injection insert 140 may introduce a first processing gas, including nitrogen, through a gas injection channel 151 to form a plasma comprising the first free radical. The plasma may be an inductively coupled plasma generated by an induction coil 130 within the gas injection channel 151. The first processing gas may be selected from diatomic nitrogen (N2), ammonia (NH3), or a mixture thereof. In some embodiments, a first processing gas may be introduced into the active region 172 of the plasma source interior 125 at a first processing gas flow rate ranging from about 1,000 standard cubic centimeters per minute (sccm) to about 10,000 sccm, for example, from about 1,000 sccm to about 9,500 sccm, from about 1,500 sccm to about 9,500 sccm, from about 1,500 sccm to about 8,500 sccm, from about 4,000 sccm to about 8,500 sccm, or from about 6,000 sccm to about 8,000 sccm. In some embodiments, the introduction time of the first free radical may range from about 10 seconds (s) to about 500 seconds, for example, from about 60 seconds to about 400 seconds, from about 90 seconds to about 300 seconds, or from about 120 seconds to about 300 seconds.

[0047] Plasma source 120 is configured to allow plasma including first free radicals to flow through holes 126 in separation grid 116 toward substrate support 112 to process substrate 114 or substrate stack 304 disposed thereon. Plasma source 120 can generate plasma charged particles, such as ions and electrons, which recombine on separation grid 116, allowing most or only neutral plasma material to pass through separation grid 116 and exposing substrate 114 or substrate stack 304 to high-density nitrogen plasma. Plasma containing at least one nitrogen free radical material contacts the side of high-k dielectric layer 308 facing separation grid 116. Substrate 114 or substrate stack 304 can be heated using a plurality of lamps 176 located on a second side of substrate stack 304 opposite separation grid 116.

[0048] In one or more embodiments that can be combined with other embodiments, the high-density plasma nitriding process of operation 220 includes exposing the high-k dielectric layer 308 to additional free radicals, such as hydroxyl radicals, argon radicals, hydrogen radicals, or combinations thereof. In some embodiments, the additional free radicals may be formed in the active region 172 within the plasma source 125. For example, a gas injection insert 140 may introduce additional gas, including hydrogen, argon, nitrogen, helium, or mixtures thereof, into the active region 172.

[0049] The plasma nitriding process of operation 220 can be carried out while maintaining a pressure range of about 1 Torr to about 20 Torr, for example, about 1 Torr to about 10 Torr, about 1 Torr to about 8 Torr, or about 1 Torr to about 5 Torr. In some specific embodiments, the plasma nitriding process of operation 220 can be carried out while maintaining a temperature range of about 400°C to about 700°C, for example, about 400°C to about 650°C, or about 550°C to about 650°C. In some specific embodiments, the plasma nitriding process of operation 220 can be carried out while the plasma source is operated at a power range of about 5 kW to about 10 kW, for example, about 5 kW to about 8 kW, about 6 kW to about 8 kW, or about 7 kW to about 8 kW.

[0050] During operation 220, a carrier gas (e.g., argon, nitrogen, helium, or a combination thereof) may be introduced into the active region 172 of the plasma source interior 125 at a flow rate ranging from about 5,000 sccm to about 10,000 sccm, for example from about 5,000 sccm to about 9,500 sccm, from about 5,500 sccm to about 9,500 sccm, from about 5,500 sccm to about 8,500 sccm, from about 6,000 sccm to about 8,500 sccm, or from about 7,000 sccm to about 8,000 sccm. In some specific embodiments, the carrier gas may be introduced for a period of time, ranging from about 10 seconds (s) to about 500 seconds, for example from about 60 seconds to about 400 seconds, from about 90 seconds to about 300 seconds, or from about 120 seconds to about 300 seconds. The carrier gas may facilitate the flow of other process gases.

[0051] While not bound by theory, it is believed that exposing high-k dielectric materials to a high-density plasma nitriding process can: (i) increase the crystallinity of the high-k film through its relatively high temperature (heater temperature @ 400-600°C and / or relatively high plasma gas temperature); (ii) further passivate oxygen vacancies caused by high-density nitrogen radicals; and (iii) form diffusion barriers that block oxidants from subsequent high-k layer deposition and heat treatment, ultimately increasing the k value and further suppressing leakage current. Furthermore, the high-density plasma nitriding process performed at relatively high temperatures (e.g., 400°C or higher) can (iv) sufficiently improve the crystallinity of the high-k dielectric material, thus eliminating the need for the previously used additional heat treatment steps.

[0052] Optionally, during operation 230, such as Figure 3C As shown, a high-k dielectric layer 308 is exposed to a high-density plasma oxidation process. During operation 230, exposure to the high-density oxidation process removes carbon impurities from the high-k dielectric layer 308 through a chemical reaction between carbon impurities and high-density oxygen radicals, and passivates oxygen vacancies with the high-density oxygen radicals. Ultimately, the k-value can be increased by improving the crystallinity of the high-k dielectric layer 308, and leakage current can be reduced by removing traps. In some specific embodiments, the high-density plasma oxidation process can be performed by exposing the high-k dielectric layer 308 to a second radical, such as an oxygen radical.

[0053] Reference Figure 1When the plasma processing system 100 disclosed herein is used, a plasma comprising a second free radical is formed in the active region 172 within the plasma source interior 125. For example, a second processing gas comprising oxygen may be introduced through the gas injection insert 140 to form a plasma comprising the second free radical. The plasma may be an inductively coupled plasma generated by the induction coil 130 within the gas injection channel 151. The second processing gas may be selected from H2O, O2, O3, H2O2, NO2, N2O, or mixtures thereof. In some embodiments, a second processing gas may be introduced into the active region 172 of the plasma source interior 125 at a second processing gas flow rate ranging from about 1,000 standard cubic centimeters per minute (sccm) to about 10,000 sccm, for example, from about 1,000 sccm to about 9,500 sccm, from about 1,500 sccm to about 9,500 sccm, from about 1,500 sccm to about 8,500 sccm, from about 4,000 sccm to about 8,500 sccm, or from about 6,000 sccm to about 8,000 sccm. In some embodiments, the introduction time of the second free radical may range from about 10 seconds (s) to about 500 seconds, for example, from about 60 seconds to about 400 seconds, from about 90 seconds to about 300 seconds, or from about 120 seconds to about 300 seconds.

[0054] Plasma source 120 is configured to allow plasma including second free radicals to flow through holes 126 in separation grid 116 toward substrate support 112 to process substrate 114 or substrate stack 304 disposed thereon. Plasma source 120 can generate plasma charged particles, such as ions and electrons, which recombine on separation grid 116, allowing most or only neutral plasma material to pass through separation grid 116 and exposing substrate 114 or substrate stack 304 to high-density oxygen plasma. Plasma containing at least one oxygen free radical material contacts the side of high-k dielectric layer 308 facing separation grid 116. Substrate 114 or substrate stack 304 can be heated using a plurality of lamps 176 located on a second side of substrate stack 304 relative to separation grid 116.

[0055] The high-density oxygen plasma process of operation 230 can be formed while maintaining a pressure in the range of about 1 Torr to about 20 Torr, for example, about 1 Torr to about 10 Torr, about 1 Torr to about 8 Torr, or about 1 Torr to about 5 Torr. In some specific embodiments, the high-density oxygen plasma process of operation 230 is performed at a temperature below the deposition temperature of the high-k dielectric layer 308 to prevent oxidation of the lower electrode 306. The high-density oxygen plasma process of operation 230 can be performed while maintaining a temperature in the range of 350°C or lower, for example, in the range of about 150°C to about 350°C, for example, in the range of about 150°C to about 300°C, or in the range of about 200°C to about 300°C. In some specific embodiments, the high-density oxygen plasma process of operation 230 can be performed while the plasma source is executed at a power in the range of about 5 kW to about 10 kW, for example, about 5 kW to about 8 kW, about 6 kW to about 8 kW, or about 7 kW to about 8 kW.

[0056] During operation 220, a carrier gas (e.g., argon, nitrogen, helium, or a combination thereof) may be introduced into the active region 172 of the plasma source interior 125 at a flow rate ranging from about 5,000 sccm to about 10,000 sccm, for example from about 5,000 sccm to about 9,500 sccm, from about 5,500 sccm to about 9,500 sccm, from about 5,500 sccm to about 8,500 sccm, from about 6,000 sccm to about 8,500 sccm, or from about 7,000 sccm to about 8,000 sccm. In some specific embodiments, the carrier gas may be introduced for a period of time, ranging from about 10 seconds (s) to about 500 seconds, for example from about 60 seconds to about 400 seconds, from about 90 seconds to about 300 seconds, or from about 120 seconds to about 300 seconds. The carrier gas may facilitate the flow of other process gases.

[0057] While not strictly adhering to theory, it is believed that exposing high-k dielectric materials to a high-density plasma oxidation process can (i) remove carbon impurities from the high-k dielectric material through a chemical reaction between carbon and high-density oxygen radicals; and (ii) passivate oxygen vacancies with high-density oxygen radicals, ultimately increasing the k-value by increasing the crystallinity of the high-k dielectric material and reducing leakage current by removing traps. However, to prevent oxidation of the lower electrode, it is necessary to use the material at temperatures below the high-k deposition temperature, for example, in the range of approximately 150°C to approximately 350°C or approximately 250°C to approximately 350°C.

[0058] In some embodiments where operation 230 is not performed, after operation 220, the semiconductor device structure 300 may be exposed to additional processing to form a MIM capacitor structure. The additional processing may include, for example, at least one of forming an additional high-k dielectric layer, an additional electrode layer, and an additional processing step. In some embodiments where operation 230 is performed, after operation 230, the semiconductor device structure 300 may be exposed to additional processing to form a MIM capacitor structure.

[0059] Figure 4 This is a flowchart describing a method 400 for processing a high-k dielectric layer according to one or more specific embodiments of the present disclosure. Figures 5A-5C Views are shown illustrating the various stages of forming a semiconductor structure according to one or more specific embodiments described herein. Although Figures 5A-5C It is described in conjunction with method 400, but Figures 5A-5C The structure disclosed herein is not limited to method 400, but can be independent of method 400. Similarly, although method 400 is combined with... Figures 5A-5C The method described, but not limited to, method 400 Figures 5A-5C The structure is not publicly available, but can be independent of... Figures 5A-5C The structure is publicly available. It should be understood that... Figures 5A-5C This is only a regional schematic diagram of the semiconductor device structure 500. The semiconductor device structure 500 can include any number of transistor portions and additional material having the state shown in the figure. The semiconductor device structure 500 can be a MIM capacitor. It should also be noted that, although Figure 4 The method 400 shown is described sequentially, but includes one or more operations that have been omitted and / or added, and / or other process sequences that have been rearranged in another ideal order, which are also within the scope of the disclosure provided herein.

[0060] Method 400 is similar to Method 200, except that the high-density plasma oxidation process is performed before the high-density plasma nitriding process.

[0061] In operation 410, a substrate stack 304 is received. The substrate stack 304 can be positioned in... Figure 1 On the substrate support 112 of the plasma processing system 100 shown. During operation 420, as... Figure 5B As shown, the high-k dielectric layer 308 is exposed to a high-density plasma oxidation process. Operation 420 is similar to operation 230. In operation 430, as... Figure 5C As shown, a high-k dielectric layer 308 is exposed to a high-density plasma nitriding process. Operation 430 can be performed similarly to operation 220.

[0062] Following operation 430, the semiconductor device structure 500 may be exposed to additional processing to form a MIM capacitor structure. The additional processing may include, for example, at least one of forming an additional high-k dielectric layer, an additional electrode layer, and additional processing techniques.

[0063] While not strictly adhering to theory, it is believed that a dual treatment of high-k layers—plasma oxidation (PO) followed by plasma nitriding (PN)—can further improve the crystallinity of high-k layers and further reduce leakage current compared to plasma nitriding alone. Plasma oxidation can (i) remove carbon impurities in the high-k dielectric layer 308 through a chemical reaction between carbon and high-density oxygen radicals, and (ii) passivate oxygen vacancies with high-density oxygen radicals. Ultimately, this can increase the k-value by increasing the crystallinity of the high-k dielectric layer 308 and reduce leakage current by removing traps. However, to prevent oxidation of the lower electrode, it needs to be performed below the high-k dielectric constant deposition temperature, for example, in the range of approximately 150°C to approximately 350°C. Subsequent plasma nitriding can: (i) increase the crystallinity of the high-k dielectric 308 film through its relatively high temperature (heater temperature @ 400-600°C and / or relatively high temperature plasma gas); (ii) further passivate oxygen vacancies caused by high-density nitrogen radicals; and (iii) form a diffusion barrier that blocks oxidants from subsequent additional high-k dielectric layer deposition and / or heat treatment, ultimately increasing the k value and further suppressing leakage current. Furthermore, performing plasma nitriding at relatively high temperatures (e.g., 350°C or higher) can (iv) sufficiently improve the crystallinity of HK, thus eliminating the need for the previously used additional heat treatment step.

[0064] The specific embodiments of this disclosure described above have many advantages. However, this disclosure does not necessarily incorporate all advantageous features and advantages into every specific embodiment of this disclosure. High-density plasma processing can reduce leakage current and increase capacitance in MIM capacitors. Removal of oxygen vacancies in the high-k layer, prevention of interface layer thickness increase by forming a nitride layer between the high-k layer and the electrode layer, formation of a barrier layer to prevent interdiffusion of impurities in the high-k layer and the electrode layer, and improvement of crystallinity in the high-k layer are achieved without the currently performed post-deposition annealing.

[0065] Specific features (including method operations) of this disclosure are mentioned in the abstract and detailed description, as well as in the claims and drawings. It should be understood that the disclosure herein includes all possible combinations of these specific features. For example, where a specific feature is disclosed in the context of a particular form, implementation, embodiment, or particular claim of this disclosure, that feature may also be used, as far as possible, in combination with other specific forms and implementations of this disclosure and / or in the context of other specific forms and implementations of this disclosure, as well as in the general context of this disclosure.

[0066] The specific embodiments and all functional operations described herein can be implemented in digital electronic circuits, or in computer software, firmware, or hardware, including the structural means disclosed herein and their structural equivalents, or combinations thereof. The specific embodiments described herein can be implemented as one or more non-transitory computer program products, i.e., one or more computer programs implemented in a machine-readable storage device for execution or control of execution by a data processing device (e.g., a programmable processor, a computer, or multiple processors or computers).

[0067] The processes and logic flows described in this specification can be executed by one or more programmable processors that execute one or more computer programs to perform functions by manipulating input data and generating outputs. These processes and logic flows can also be executed by special-purpose logic circuits, such as FPGAs (Field-Programmable Gate Arrays) or ASICs (Application-Specific Integrated Circuits), and the device can also be implemented as a special-purpose logic circuit.

[0068] The term "data processing device" includes all instruments, apparatus, and machines used for processing data, including, for example, programmable processors, computers, or multiple processors or computers. In addition to hardware, the device may also include program code that establishes an execution environment for the associated computer program, such as program code constituting processor firmware, protocol stacks, database management systems, operating systems, or combinations thereof. Processors suitable for executing computer programs include, for example, general-purpose and special-purpose microprocessors, and one or more processors of any digital computer.

[0069] Computer-readable media suitable for storing computer program instructions and data include various forms of non-volatile memory, media, and memory devices, such as semiconductor memory devices like EPROM, EEPROM, and cache devices; disks, such as internal hard disks or removable disks; magneto-optical disks; and CD-ROM and DVD-ROM disks. Processors and memory may be supplemented by or incorporated into special-purpose logic circuitry.

[0070] As used herein, the term "comprising" and its equivalent grammar mean that other parts, components, operations, etc., may optionally be present. For example, an article that "comprising" (or "contains" parts A, B, and C) may consist of (i.e., only contain) parts A, B, and C, or it may contain not only parts A, B, and C, but also one or more other parts. Furthermore, whenever the transitional phrase "comprising" or its equivalent grammar is used before a composition, element, or group of elements, it should be understood that before describing the composition, element, or group of elements, the transitional phrases "substantially constitutes," "is composed of," "is a group of," or "is a group of," or vice versa, may be considered before the same composition or group of elements.

[0071] The methods mentioned in this article include two or more defined operations, which can be performed in any order or simultaneously (unless the context precludes this possibility). The method may include one or more other operations that are performed before any defined operation, between two defined operations, or after all defined operations (unless the context precludes this possibility).

[0072] When describing the elements of this disclosure or their exemplary forms or specific embodiments, the articles “a,” “an,” “the,” and “these” mean that there are one or more elements.

[0073] The terms “include,” “contain,” and “have” mean inclusive, implying that there may be additional elements besides those listed.

[0074] While the foregoing describes specific embodiments of this disclosure, other and further specific embodiments of this disclosure may be devised without departing from its basic scope, the scope of which is determined by the following claims.

Claims

1. A plasma treatment method, comprising the following steps: A substrate stack is received into a processing chamber, the substrate stack including a high-k dielectric layer formed on a metal electrode; The processing gas is introduced into a gas injection channel defined between the gas injection insert and the sidewall of the plasma source; An inductively coupled plasma is generated within the gas injection channel by an induction coil positioned near the sidewall and horizontally overlapping the gas injection channel, wherein the plasma comprises at least one nitrogen free radical substance; The plasma is delivered from the plasma source to the processing chamber coupled thereto, wherein the plasma flows through a separation grid disposed between the plasma source and the substrate stack to be processed; as well as The substrate stack is processed in the processing chamber, wherein the step of processing the substrate stack includes the following steps: The plasma containing at least one nitrogen radical substance is brought into contact with the high-k dielectric layer facing the separated grid; as well as The substrate stack is heated using a plurality of lamps located on the second side of the substrate stack, opposite the separation grid.

2. The method of claim 1, wherein after treating the substrate stack with the plasma, the method further comprises: Oxygen-containing gas is introduced into the gas injection channel of the plasma source; Oxygen plasma is generated within the gas injection channel, wherein the oxygen plasma includes oxygen free radicals; The oxygen plasma is transported from the plasma source to the processing chamber; as well as The substrate stack is treated with the oxygen plasma in the processing chamber, wherein the step of treating the substrate stack includes the following steps: The oxygen plasma containing the oxygen radicals is brought into contact with the high-k dielectric layer facing the separated grid; as well as The substrate stack is heated using the plurality of lamps located on the second side of the substrate stack, opposite the separation grid.

3. The method of claim 1, wherein the step of processing the substrate stack within the processing chamber forms one or more nitrogen-containing diffusion barrier layers within the substrate stack.

4. The method of claim 3, wherein the diffusion barrier layer of the one or more diffusion barrier layers is formed within the high-k dielectric layer.

5. The method of claim 3, wherein the diffusion barrier layer of the one or more diffusion barrier layers is formed at the interface between the high-k dielectric layer and the metal electrode.

6. The method of claim 1, wherein the high-k dielectric layer comprises zirconium oxide, hafnium oxide, or a combination of zirconium oxide and hafnium oxide.

7. The method of claim 6, wherein the metal electrode comprises a metal nitride, the metal being selected from titanium (Ti), molybdenum (Mo), tungsten (W), or tantalum (Ta).

8. The method of claim 1, wherein the high-k dielectric layer is formed by atomic layer deposition (ALD) process.

9. A plasma treatment method, comprising the following steps: A substrate stack is received into a processing chamber, the substrate stack including a high-k dielectric layer formed on a metal electrode; The processing gas is introduced into a gas injection channel defined between the gas injection insert and the sidewall of the plasma source; An inductively coupled plasma is generated within the gas injection channel by an induction coil, the induction coil being positioned near the sidewall and horizontally overlapping the gas injection channel, wherein the plasma comprises at least one oxygen free radical substance; The plasma is delivered from the plasma source to the processing chamber coupled thereto, wherein the plasma flows through a separation grid disposed between the plasma source and the substrate stack to be processed; as well as The substrate stack is processed in the processing chamber, wherein the step of processing the substrate stack includes the following steps: The plasma containing at least one oxygen radical substance is brought into contact with the high-k dielectric layer facing the separated grid; as well as The substrate stack is heated using a plurality of lamps located on the second side of the substrate stack, opposite the separation grid.

10. The method of claim 9, wherein after treating the substrate stack with the plasma, the method further comprises the following steps: Nitrogen-containing gas is introduced into the gas injection channel of the plasma source; A nitrogen plasma is generated within the gas injection channel, wherein the nitrogen plasma comprises nitrogen free radicals; The nitrogen plasma is transported from the plasma source to the processing chamber; as well as The substrate stack is treated with the nitrogen plasma in the processing chamber, wherein the step of treating the substrate stack includes the following steps: The nitrogen plasma containing the nitrogen radicals is brought into contact with the high-k dielectric layer facing the separated grid; as well as The substrate stack is heated using the plurality of lamps located on the second side of the substrate stack, opposite the separation grid.

11. The method of claim 10, wherein the step of treating the substrate stack with the nitrogen plasma forms one or more nitrogen-containing diffusion barrier layers within the substrate stack.

12. The method of claim 11, wherein the diffusion barrier layer in the one or more diffusion barrier layers is formed within the high-k dielectric layer.

13. The method of claim 11, wherein the diffusion barrier layer of the one or more diffusion barrier layers is formed at the interface between the high-k dielectric layer and the metal electrode.

14. The method of claim 9, wherein the high-k dielectric layer comprises zirconium oxide, hafnium oxide, or a combination of zirconium oxide and hafnium oxide.

15. The method of claim 14, wherein the metal electrode comprises a metal nitride, the metal being selected from titanium (Ti), molybdenum (Mo), tungsten (W), or tantalum (Ta).

16. The method of claim 9, wherein the high-k dielectric layer is formed by an atomic layer deposition (ALD) process.

17. A plasma processing system, comprising: A processing chamber, which defines a processing space; as well as Plasma source; A gas injection insert disposed within the plasma source; A gas injection channel defined between the gas injection insert and the sidewall of the plasma source; An induction coil, wherein the induction coil is positioned close to the sidewall and horizontally overlaps with the gas injection channel; A separation grid, which separates the plasma source from the processing space; as well as The system controller includes: Memory, the memory being used to store computer-readable instructions; and A processor coupled to the memory, the processor being configured by computer-readable instructions, which, when executed, perform multiple operations, including: The processing gas is introduced into the gas injection channel; The induction coil generates an inductively coupled plasma in the gas injection channel, wherein the plasma includes at least one nitrogen free radical substance; The plasma is transported from the plasma source to the processing space, wherein the plasma flows through the separation grid; and Processing a substrate stack within the processing space, the substrate stack comprising a high-k dielectric layer formed on a metal electrode, wherein processing the substrate stack includes: The plasma containing at least one nitrogen radical substance is brought into contact with the high-k dielectric layer facing the separated grid; and The substrate stack is heated using a plurality of lamps located on the second side of the substrate stack, opposite the separation grid.

18. The system of claim 17, wherein after treating the substrate stack with the plasma, the plurality of operations further include: Oxygen-containing gas is introduced into the gas injection channel of the plasma source; Oxygen plasma is generated within the gas injection channel, wherein the oxygen plasma includes oxygen free radicals; The oxygen plasma is transported from the plasma source to the processing space; as well as The substrate stack is treated with the oxygen plasma within the processing space, wherein the treatment of the substrate stack includes: The oxygen plasma containing the oxygen radicals is brought into contact with the high-k dielectric layer facing the separated grid; as well as The substrate stack is heated using the plurality of lamps located on the second side of the substrate stack, opposite the separation grid.

19. The system of claim 17, wherein processing the substrate stack within the processing space forms one or more nitrogen-containing diffusion barrier layers within the substrate stack.

20. The system of claim 17, wherein the high-k dielectric layer comprises zirconium oxide, hafnium oxide, or a combination of zirconium oxide and hafnium oxide, and the metal electrode comprises a metal nitride selected from titanium (Ti), molybdenum (Mo), tungsten (W), or tantalum (Ta).

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