Wafer chuck, semiconductor apparatus, and plating method

Abstract

The application relates to the technical field of wafer manufacturing, and discloses a wafer clamp, a semiconductor device and an electroplating method. The wafer clamp comprises a base, a sealing ring and a pressure head. The base is annular, the sealing ring is installed on the base, and the pressure head can be arranged on the base and apply external pressure to the back surface of a wafer to press the wafer against the sealing ring. At this time, an annular space is formed between the base and the pressure head. The outer non-electroplating surface of the wafer, which is defined by the outermost contact boundaries of the pressure head and the sealing ring respectively and in contact with the wafer, is located in the annular space. The wafer clamp is also provided with an air inlet structure. One end of the air inlet structure is in communication with an air source, and the other end is in communication with the annular space. The air inlet structure is used for blowing dry the outer non-electroplating surface of the wafer before electroplating. Even in the electroplating process with a long process time, the wafer clamp can effectively prevent the electroplating solution from entering the inside of the wafer clamp, not only preventing the outer non-electroplating surface of the wafer from being corroded, but also avoiding the pollution of the electroplating solution to the clamp and the sealing ring.

Description

Technical Field

[0001] This invention relates to the field of wafer manufacturing technology, and more particularly to a wafer fixture, semiconductor equipment, and electroplating method. Background Technology

[0002] Advanced packaging technology involves electroplating of wafers. Before electroplating, different feature shapes to be plated, such as TSV holes, bumps, and RDLs (rewiring lines), are formed on the wafer surface. After electroplating, these feature shapes are filled or covered by a metal layer. Generally, the side of the wafer with feature shapes is the front side, and the side without feature shapes is the back side. During the electroplating process, only the front side of the wafer can come into contact with the electroplating solution. If the back side of the wafer or the annular side defining the front and back sides comes into contact with the electroplating solution, it will be contaminated and damaged by the solution.

[0003] In related technologies, to reduce defects such as voids or holes in the plating layer caused by air bubbles when the wafer enters the plating chamber, a pre-wetting step is performed before wafer electroplating. To prevent the plating solution from corroding the back or annular side of the wafer, a fixture is often used to hold the wafer during the electroplating process. The fixture includes a base and a pressure head. The base is annular and has a sealing ring on its upper side. The wafer is positioned with its front side facing down and its edges overlapping the sealing ring. The plating area on the front side of the wafer is exposed from the underside of the base to facilitate contact with the plating solution. The pressure head presses the wafer down onto the sealing ring, which prevents the plating solution from entering the wafer fixture and contacting the annular side or back of the wafer.

[0004] However, the applicant discovered that in some long-duration electroplating processes, when the pre-wetted wafer is placed into the jig and enters the electroplating solution along with the jig, the electroplating solution may seep into the jig through the contact interface between the wafer and the sealing ring, thereby corroding the annular edge and back side of the wafer. The mechanism of electroplating solution penetration is mainly as follows: although the sealing ring achieves physical isolation between the inner and outer areas of the wafer, the liquid film formed by pre-wetting creates a continuous moist channel on the front side of the wafer, the area sealed between the front side of the wafer and the sealing ring, and the annular edge and back side of the wafer. This moist channel significantly accelerates the diffusion and penetration of the electroplating solution from the electroplating area to the non-electroplated area during the electroplating process, causing the sealing effect to gradually decrease as the electroplating time increases. Summary of the Invention

[0005] One object of the present invention is to provide a wafer fixture that can prevent the plating solution from entering the wafer fixture and corroding the annular side and back of the wafer during electroplating.

[0006] To achieve this objective, the present invention employs the following technical solution: a wafer jig, comprising a base, a sealing ring, and a pressure head; the base is annular, the sealing ring is mounted on the base, and the sealing ring is configured to contact the front side of the wafer so that the portion of the sealing ring in contact with the wafer is sealed under external pressure; the pressure head can cover the base and apply sealing external pressure to the back side of the wafer to press the wafer against the sealing ring; when the pressure head presses the wafer against the sealing ring, an annular space is formed between the base and the pressure head, and the outermost contact boundaries defined by the pressure head and the sealing ring after contacting the wafer respectively define the outermost non-plated surface of the wafer located within the annular space; the wafer jig is further provided with an air intake structure, one end of which is configured to communicate with an air source, and the other end of which is configured to communicate with the annular space, and the air intake structure is configured to dry the outer non-plated surface of the wafer before electroplating.

[0007] As an alternative, the sealing ring has an annular groove on the side facing the wafer, the annular groove dividing the sealing ring into an inner ring and an outer ring, the inner ring being located inside the annular groove; the wafer overlaps the inner ring and partially blocks the opening of the annular groove, so that the annular groove communicates with the annular space; the outer unplated surface of the wafer includes a first surface, the first surface being the area defined by the outermost contact boundary after the wafer's front side contacts the inner ring and extends to the outermost edge of the wafer's front side.

[0008] As an alternative, the outer unplated surface of the wafer also includes a second surface, which is a connecting surface between the front and back sides of the wafer, and a gap is formed between the second surface and the inner wall of the base to allow airflow.

[0009] As an alternative, the outer diameter of the surface of the pressure head facing the wafer is smaller than the diameter of the wafer, and the outer unplated surface of the wafer also includes a third surface, which is the area defined by the outermost contact boundary of the pressure head after contacting the back of the wafer, extending to the outermost edge of the back of the wafer.

[0010] As an optional solution, the air intake structure includes an air intake hole, which is provided on the base and / or the pressure head. One end of the air intake hole is used to communicate with the air source, and the other end extends to the side wall of the annular space so as to be able to blow air into the annular space.

[0011] As an optional solution, the air inlet includes air inlet a, which is disposed on the base, with the outlet end of air inlet a extending to the outer wall of the annular space and the outlet end inclined toward the sealing ring; and / or, the air inlet includes air inlet b, which is disposed on the pressure head, with the outlet end of air inlet b extending to the inner wall of the annular space and the outlet end inclined toward the sealing ring; and / or, the air inlet includes air inlet c, which is disposed on the pressure head and the outlet end of air inlet c extends to the top wall of the annular space.

[0012] As an alternative, the air intake structure includes a plurality of air intake holes, which are configured as at least one group of air intake holes. Each group of air intake holes includes at least two air intake holes, and the at least two air intake holes in the same group of air intake holes are arranged at intervals along the circumference of the wafer fixture.

[0013] As an alternative, the air intake structure includes an air pipe, one end of which is connected to the air source, and the other end extends into the annular space or extends to be flush with the inner wall of the annular space.

[0014] As an alternative, the air tube is clamped between the base and the pressure head; or the air tube passes through the base; or the air tube passes through the pressure head.

[0015] Another object of the present invention is to provide a semiconductor device that, by using the above-mentioned wafer jig to electroplate a wafer, avoids the electroplating solution from entering the wafer jig and corroding the annular side and back of the wafer, resulting in good electroplating quality.

[0016] To achieve this objective, the present invention adopts the following technical solution: a semiconductor device, comprising: the above-mentioned wafer jig; an electroplating cavity matched with the wafer jig; wherein the wafer jig is capable of carrying the wafer to the electroplating cavity for electroplating process.

[0017] Another object of the present invention is to provide an electroplating method that, by employing the above-mentioned wafer fixture, can prevent the electroplating solution from eroding the annular side and back of the wafer during the electroplating process, even in electroplating processes with long processing times.

[0018] To achieve this objective, the present invention adopts the following technical solution: an electroplating method, performed using the above-mentioned wafer jig, the electroplating method comprising: placing the wafer on the sealing ring; before the pressure head is placed on the base or after the pressure head is placed on the base, introducing gas into the air intake structure to dry the outer non-electroplated surface of the wafer.

[0019] As an optional approach, the electroplating method further includes drying the outer non-electroplated surface of the wafer before the front side of the wafer comes into contact with the electroplating solution.

[0020] The beneficial effects of the wafer clamp of the present invention are as follows: When electroplating a wafer using the wafer clamp of the present invention, the pre-wetted wafer is placed face down on the sealing ring, the pressure head is placed on the base and pressure is applied to the wafer, an annular space is formed between the pressure head and the base, the sealing ring contacts the face of the wafer and achieves sealing under the pressure of the pressure head, the middle area of ​​the face of the wafer is exposed from the underside of the base so that it can contact the electroplating solution in the future; the outermost contact boundary defined by the pressure head and the sealing ring after they contact the wafer respectively is located within the above-mentioned annular space. After the wafer is placed on the sealing ring or the pressure head is placed on the base, an external air source blows air into the annular space through the air intake structure, thereby drying the pre-wetted outer non-electroplated surface of the wafer. This prevents the formation of a through-channel liquid between the area where the wafer's front side contacts the sealing ring and the outer non-electroplated surface of the wafer. Consequently, it prevents the electroplating solution from slowly seeping into the wafer fixture through this liquid channel during a long electroplating process, thus avoiding corrosion of the non-electroplated area on the front side, the annular side, and the back side of the wafer.

[0021] The semiconductor device of the present invention, by employing the above-mentioned wafer jig, performs electroplating on the wafer, which can prevent the electroplating solution from entering the wafer jig and corroding the annular side and back of the wafer, resulting in good electroplating quality.

[0022] The electroplating method of the present invention, by employing the aforementioned wafer clamping fixture to hold the wafer, effectively prevents the electroplating solution from entering the wafer's interior, even during long-duration electroplating processes. This characteristic prevents corrosion of the wafer's external non-electroplated surfaces, thereby avoiding wafer contamination caused by corrosion particles; simultaneously, it also protects the fixture and sealing ring from electroplating solution contamination, improving equipment maintenance cycles and increasing online production time. Attached Figure Description

[0023] Figure 1 This is a cross-sectional view of the first type of wafer fixture when closed, provided in a specific embodiment of the present invention.

[0024] Figure 2 This is a cross-sectional view of the second type of wafer fixture when closed, provided in a specific embodiment of the present invention.

[0025] Figure 3 This is a cross-sectional view of the third type of wafer fixture when closed, provided in a specific embodiment of the present invention.

[0026] Figure 4 This is a cross-sectional view of the fourth type of wafer fixture when closed, provided in a specific embodiment of the present invention.

[0027] Figure 5 This is a cross-sectional view of the fifth type of wafer fixture when closed, provided in a specific embodiment of the present invention.

[0028] In the diagram: 10. Base; 11. First seat; 111. Support platform; 12. Second seat; 20. Pressure head; 30. Sealing ring; 31. Annular groove; 32. Inner ring; 33. Outer ring; 40. Air intake structure; 41. Air intake hole a; 42. Air intake hole b; 43. Air intake hole c; 44. Air pipe; 50. Wafer; 51. First surface; 52. Second surface; 53. Third surface; 60. Annular space; 61. Outer side wall; 62. Inner side wall; 63. Top wall. Detailed Implementation

[0029] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the scope of the invention. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention and not the entire structure.

[0030] In the description of this invention, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0031] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0032] In the description of this embodiment, the terms "upper," "lower," "right," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention. In addition, the terms "first" and "second" are used only for distinction in description and have no special meaning.

[0033] This embodiment provides a wafer fixture for electroplating wafer 50. Specifically, before electroplating, a characteristic shape to be electroplated is formed on one side of wafer 50. In this embodiment, the side of wafer 50 with the characteristic shape is the front side, and the side without the characteristic shape is the back side. During the electroplating process of wafer 50, part or all of the front side of wafer 50 is the electroplating area and needs to contact the electroplating solution. During this process, the specific shape of the electroplating area on the front side of wafer 50 is filled or covered by the electroplated metal layer to complete the electroplating process. The non-electroplated areas on the front side of the wafer, the annular side of the wafer, and the back side of the wafer are all non-electroplated areas and do not need to contact the electroplating solution. If they do contact the electroplating solution, they will be corroded and contaminated by the electroplating solution.

[0034] During the electroplating process, the applicant discovered that in some electroplating processes with longer processing times, the electroplating solution would penetrate the area where the wafer's front side contacts the sealing ring, thus corroding the non-plated areas, annular sides, and back of wafer 50. This phenomenon was less common in shorter electroplating processes. Further research and analysis by the applicant revealed that when using existing electroplating fixtures, if the pre-wetted wafer is placed face down on the sealing ring, and the pressure head is placed on the base and pressure is applied to the wafer, a relatively reliable seal can be initially formed between the wafer and the sealing ring. Therefore, in shorter electroplating processes, the phenomenon of the electroplating solution penetrating the area where the wafer's front side contacts the sealing ring and corroding the non-plated areas, annular sides, and back of wafer 50 will not occur. However, due to the pre-wetting step before the wafer enters the electroplating fixture, the edge of the wafer is inevitably wetted. After the wafer is placed in the wafer fixture, liquid channels (or moisture channels) will still be formed between the area where the wafer's front side contacts the sealing ring and the area on the front side of the wafer that extends outward from the area where the wafer contacts the sealing ring to the edge. Due to the existence of these liquid channels, the electroplating solution diffuses into the electroplating fixture at a faster rate. Therefore, in electroplating processes with long electroplating times, the electroplating solution may enter and corrode the non-electroplated area on the front side, the annular side, and the back side of the wafer 50.

[0035] Based on this discovery, this embodiment provides a wafer fixture, such as Figure 1As shown, the wafer jig includes a base 10, a sealing ring 30, and a pressure head 20. The base 10 is annular, and the sealing ring 30 is mounted on the base 10. The sealing ring 30 is configured to contact the front side of the wafer 50 so that the portion of the sealing ring 30 in contact with the wafer 50 is sealed under external pressure. The pressure head 20 can be placed on the base 10 and applies a sealing external pressure to the back side of the wafer 50 to press the wafer 50 against the sealing ring 30. When the pressure head 20 presses the wafer 50 against the sealing ring 30, an annular space 60 is formed between the base 10 and the pressure head 20. The outermost contact boundaries defined by the pressure head 20 and the sealing ring 30 after contacting the wafer 50 respectively, and the outermost non-plated surface of the wafer 50, is located within the annular space 60. The wafer fixture is also provided with an air intake structure 40, one end of which is connected to an air source and the other end is connected to an annular space 60. The air intake structure 40 is configured to dry the outer non-electroplated surface of the wafer 50 before electroplating.

[0036] When electroplating wafer 50 using the wafer jig of the present invention, the pre-wetted wafer 50 is placed face down on the sealing ring 30. The pressure head 20 is placed on the base 10 and applies pressure to the wafer 50, forming an annular space 60 between the pressure head 20 and the base 10. The sealing ring 30 contacts the face of the wafer 50 and is sealed under the pressure of the pressure head 20. The electroplating area on the face of the wafer 50 is exposed from the underside of the base 10 to facilitate subsequent contact with the electroplating solution. The outer non-electroplated surface of the wafer 50 is located within the aforementioned annular space 60. After the wafer 50 is placed on the sealing ring 30 or the pressure head 20 is placed on the base 10, the external air source blows air into the annular space 60 through the air intake structure 40, and dries the non-electroplated surface of the pre-wetted wafer 50 before electroplating. This avoids the formation of a through liquid channel between the area where the front of the wafer 50 contacts and seals the sealing ring 30 and the area on the front of the wafer extending outward from the contact and sealing area between the wafer and the sealing ring to the edge. This prevents the electroplating solution from slowly seeping into the wafer fixture through the liquid channel during the long electroplating process and corroding the annular side, back, and front non-electroplated areas of the wafer 50, thus improving the electroplating quality.

[0037] In this embodiment, when the wafer jig carries the wafer 50 into the electroplating chamber for electroplating, the entire wafer jig is not completely submerged in the electroplating solution; it is sufficient that the front side of the wafer 50 is in contact with the electroplating solution. Therefore, there is a structural gap between the base 10 and the pressure head 20, which is connected to the annular space 60. When the air intake structure 40 blows air into the annular space 60, the airflow can be discharged through the structural gap, ensuring smooth airflow and quickly drying the outer non-electroplated surface of the wafer 50. Optionally, the gas source can be an inert gas source, capable of providing an inert gas such as nitrogen. Therefore, the gas enters the annular space 60 through the air intake structure 40 and is directly discharged into the environment through the aforementioned structural gap, without causing environmental pollution or harm to workers.

[0038] In some embodiments, such as Figure 1 As shown, the base 10 includes a first base 11 and a second base 12, both of which are annular. The lower end of the inner ring of the first base 11 has a support platform 111 protruding inwards, on which a sealing ring 30 is disposed. The second base 12 is disposed on the upper side of the inner ring of the first base 11 and is fixedly connected to the first base 11. The second base 12 presses the outer end of the sealing ring 30 radially against the support platform 111, thereby fixing the sealing ring 30 to the base 10. An annular groove 31 is provided on the side of the sealing ring 30 facing the wafer 50. The annular groove 31 divides the sealing ring 30 into an inner ring portion 32 and an outer ring portion 33. The outer ring portion 33 is located outside the annular groove 31 (i.e., away from the center of the wafer 50) and is pressed against the support platform 111 by the second base 12. The inner ring portion 32 is located inside the annular groove 31 and is used to support and seal the wafer 50.

[0039] like Figure 1 As shown, when the wafer 50 is placed in the wafer fixture, the wafer 50 overlaps the inner ring portion 32 of the sealing ring 30 and partially blocks the opening of the annular groove 31, so that the annular groove 31 communicates with the annular space 60. The outer non-plated surface of the wafer 50 includes a first surface 51, which is the area defined by the outermost contact boundary after the front side of the wafer 50 contacts the inner ring portion 32, extending to the outermost edge of the front side of the wafer 50. The first surface 51 is located above the annular groove 31. Since the annular groove 31 is connected to the annular space 60, when the air intake structure 40 blows air into the annular space 60, the airflow can contact the first surface 51 to dry the first surface 51.

[0040] like Figure 1As shown, the outer non-electroplated surface of the wafer 50 also includes a second surface 52, which is a connecting surface between the front and back sides of the wafer 50. A gap is formed between the second surface 52 and the inner wall of the base 10, allowing airflow to pass through. Therefore, when the air intake structure 40 blows air into the annular space 60, the airflow can contact the second surface 52 to dry it.

[0041] like Figure 1 As shown, the outer diameter of the surface of the pressure head 20 facing the wafer 50 is smaller than the diameter of the wafer 50. The outer non-plated surface of the wafer 50 also includes a third surface 53. The third surface 53 is the area defined by the outermost contact boundary after the pressure head 20 contacts the back side of the wafer 50, extending to the outermost edge of the back side of the wafer 50. The third surface 53 is located within the annular space 60, so it can be dried when the air intake structure 40 blows air into the annular space 60.

[0042] In some embodiments, the air intake structure 40 includes an air intake hole. The air intake hole is formed on the base 10 and / or the pressure head 20. One end of the air intake hole is used to communicate with an air source, and the other end extends to the side wall of the annular space 60 to allow air to be blown into the annular space 60. The above solution only requires machining holes at appropriate positions on the base 10 or the pressure head 20 based on existing wafer fixtures. No modifications are needed to the mating features or connection methods between the base 10 and the pressure head 20, resulting in low cost.

[0043] In this embodiment, the air intake structure 40 includes multiple air intake holes, which are configured as at least one group of air intake holes. Each group of air intake holes includes at least two air intake holes, and the at least two groups of air intake holes in the same group are arranged at intervals along the circumference of the wafer jig. This arrangement ensures that the external non-electroplated surface of the wafer 50 is uniformly exposed to airflow at all circumferential positions and is uniformly dried, ensuring that no through-channel solution channels are formed at any position.

[0044] In some embodiments, such as Figure 1As shown, the air inlet includes an air inlet a41, which is provided on the base 10. The outlet end of the air inlet a41 extends to the outer wall 61 of the annular space 60, and the outlet end is inclined towards the outer non-plated surface of the wafer 50. This arrangement allows the drying airflow to contact the outer non-plated surface of the wafer 50 more directly and quickly, carrying away liquid from the outer non-plated surface and improving drying efficiency. In this embodiment, multiple air inlets a41 can be arranged in a ring, and these multiple air inlets a41 are evenly distributed along the circumference of the base 10. In some embodiments, the air inlet end of the air inlet a41 extends to the outer surface of the base 10 to facilitate communication with an air source via a pipe. In some embodiments, an air intake channel and an annular connecting channel may also be provided in the base 10. One end of the air intake channel extends through to the outer surface of the base 10 and is used to connect with the air source. The other end of the air intake channel is connected to the annular connecting channel. Each air intake hole a41 is connected to the annular connecting channel. This arrangement can improve the convenience of connecting the entire air intake structure 40 with the air source.

[0045] In some embodiments, such as Figure 2 As shown, the air inlet includes an air inlet b42, which is provided on the pressure head 20. The outlet end of the air inlet b42 extends to the inner wall 62 of the annular space 60, and the outlet end is inclined towards the outer non-electroplated surface of the wafer 50. This arrangement allows the drying airflow to contact the outer non-electroplated surface of the wafer 50 more directly and quickly, carrying away liquid from the outer non-electroplated surface and improving drying efficiency. In this embodiment, multiple air inlets b42 are provided, and the multiple air inlets b42 are evenly arranged along the circumference of the pressure head 20. In some embodiments, the air inlet end of the air inlet b42 extends to the outer surface of the pressure head 20 to facilitate communication with an air source through a pipe. In some embodiments, an air intake channel and an annular connecting channel may also be provided inside the pressure head 20. One end of the air intake channel extends through to the outer surface of the pressure head 20 and is used to communicate with the air source. The other end of the air intake channel is connected to the annular connecting channel. Each air intake hole b42 is connected to the annular connecting channel. This arrangement can improve the convenience of communicating the air intake structure 40 with the air source.

[0046] In some embodiments, such as Figure 3As shown, the air inlet includes an air inlet c43. The pressure head 20 is provided with an air inlet c43, and the outlet end of the air inlet c43 extends to the top wall 63 of the annular space 60. With this configuration, the airflow can be directly directed at the external non-electroplated surface of the wafer 50, thereby drying the external non-electroplated surface more quickly and directly. In this embodiment, multiple air inlets c43 are provided, and these multiple air inlets c43 are evenly arranged along the circumference of the pressure head 20. In some embodiments, the air inlet end of the air inlet c43 extends to the outer surface of the pressure head 20 to facilitate communication with an air source via a pipe. In some embodiments, an air inlet channel and an annular connecting channel can also be provided inside the pressure head 20. One end of the air inlet channel extends through to the outer surface of the pressure head 20 and is used to communicate with an air source, while the other end of the air inlet channel is connected to the annular connecting channel. Each air inlet c43 is connected to this annular connecting channel. This configuration improves the convenience of communicating the air inlet structure 40 with the air source.

[0047] In some embodiments (not shown), the air inlet may include two or three of the following: air inlet a41, air inlet b42, and air inlet c43. This is not a limitation.

[0048] In some embodiments, the air intake structure 40 includes an air pipe 44, one end of which is connected to an air source, and the other end extends into the annular space 60 or extends to be flush with the inner wall of the annular space 60. This configuration not only facilitates communication with an external air source but also allows for more flexible adjustment of the position of the air outlet end of the air pipe 44, enabling closer airflow to the external non-electroplated surface of the wafer 50 and improving drying efficiency.

[0049] In some embodiments, such as Figure 4 As shown, the air tube 44 is sandwiched between the base 10 and the pressure head 20. In this design, only one groove needs to be machined on either the upper surface of the base 10 or the lower surface of the pressure head 20 to accommodate the air tube 44. This makes the machining process more convenient. It can be understood that in this embodiment, multiple air tubes 44 are arranged in a ring, and the multiple air tubes 44 are evenly distributed along the circumference of the wafer jig, so that air can be blown evenly to various positions along the circumference of the outer non-electroplated surface of the wafer 50, ensuring the uniformity of drying.

[0050] In some embodiments, such as Figure 5 As shown, the air tube 44 passes through the pressure head 20 and extends into the annular space 60. In this embodiment, the air tube 44 can be configured as a bent tube. This configuration ensures that the air tube 44 does not interfere with the position of the base 10, while allowing the air outlet of the air tube 44 to be closer to the outer unplated surface of the wafer 50, thereby drying the outer unplated surface more quickly and efficiently. In some embodiments, the air tube 44 can also be configured to pass through the base 10; this is not specifically limited here.

[0051] This embodiment also provides a semiconductor device, which includes the aforementioned wafer jig and an electroplating chamber that matches the wafer jig. The wafer jig is capable of carrying a wafer 50 to the electroplating chamber for electroplating. The electroplating chamber is filled with an electroplating solution. After the wafer jig enters the electroplating chamber, it is sufficient to ensure that the electroplating solution contacts the electroplating area on the front side of the wafer 50; details will not be elaborated further. By using the aforementioned electroplating jig, the semiconductor device electroplats the wafer 50 without the electroplating solution entering and corroding the annular side, back, or non-electroplated areas of the front side of the wafer 50.

[0052] This embodiment also provides an electroplating method, which is performed using the wafer jig described above. The electroplating method includes: placing the wafer 50 on the sealing ring 30; and introducing gas into the air intake structure 40 to dry the outer non-electroplated surface of the wafer 50 before the pressure head 20 is placed on the base 10 or after the pressure head 20 is placed on the base 10.

[0053] This electroplating method can prevent the formation of a through liquid channel between the outer non-electroplated surface of the wafer 50 and the part of the front side of the wafer 50 that is in sealing contact with the sealing ring 30. Therefore, even in electroplating processes with long processing times, it can also prevent the electroplating solution from entering the wafer fixture and corroding the outer non-electroplated surface of the wafer 50.

[0054] In this embodiment, the outer non-plating surface of the wafer 50 is dried before the front side of the wafer 50 comes into contact with the plating solution. This arrangement can more reliably prevent the plating solution from entering the wafer fixture through the solution channel and corroding the outer non-plating surface of the wafer 50.

[0055] Even with the aforementioned solution channels, the electroplating solution still requires a certain amount of time to penetrate the wafer fixture. Therefore, in principle, the external non-electroplated surface of wafer 50 should be dried within this specified time. This setup allows for simultaneous electroplating and drying, thereby improving overall electroplating efficiency. Therefore, it can be set to dry the external non-electroplated surface of wafer 50 within a preset time after the front side of wafer 50 contacts the electroplating solution. Optionally, the preset time can be 0~10 minutes.

[0056] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. For those skilled in the art, based on the concept of the present invention, there will be changes in specific implementation methods and application scope. The content of this specification should not be construed as a limitation of the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the claims of the present invention.

Claims

1. A wafer fixture, characterized in that, The device includes a base (10), a sealing ring (30), and a pressure head (20). The base (10) is annular, and the sealing ring (30) is mounted on the base (10). The sealing ring (30) is configured to contact the front side of the wafer (50) so that the portion of the sealing ring (30) in contact with the wafer (50) is sealed under external pressure. The pressure head (20) can cover the base (10) and apply sealing external pressure to the back side of the wafer (50) to press the wafer (50) against the sealing ring (30). When the pressure head (20) presses the wafer (50) against the sealing ring (30), an annular space (60) is formed between the base (10) and the pressure head (20). The outermost contact boundary defined by the pressure head (20) and the sealing ring (30) after they contact the wafer (50) respectively is located within the annular space (60). The wafer fixture is also provided with an air intake structure (40). One end of the air intake structure (40) is configured to be connected to an air source, and the other end is connected to the annular space (60). The air intake structure (40) is configured to dry the outer non-electroplated surface of the wafer (50) before the wafer is electroplated.

2. The wafer fixture as described in claim 1, characterized in that, The sealing ring (30) has an annular groove (31) on the side facing the wafer (50). The annular groove (31) divides the sealing ring (30) into an inner ring (32) and an outer ring (33). The inner ring (32) is located inside the annular groove (31). The wafer (50) overlaps the inner ring (32) and blocks part of the opening of the annular groove (31) so that the annular groove (31) communicates with the annular space (60). The outer non-electroplated surface of the wafer (50) includes a first surface (51). The first surface (51) is the area defined by the outermost contact boundary after the front surface of the wafer (50) contacts the inner ring (32) and extends to the outermost edge of the front surface of the wafer (50).

3. The wafer fixture as described in claim 2, characterized in that, The outer non-electroplated surface of the wafer (50) also includes a second surface (52), which is a connecting surface between the front and back sides of the wafer (50). A gap is formed between the second surface (52) and the inner wall of the base (10) to allow airflow.

4. The wafer fixture as described in claim 3, characterized in that, The outer diameter of the surface of the pressure head (20) facing the wafer (50) is smaller than the diameter of the wafer (50). The outer non-electroplated surface of the wafer (50) also includes a third surface (53). The third surface (53) is the area defined by the outermost contact boundary of the pressure head (20) after contacting the back side of the wafer (50) extending to the outermost edge of the back side of the wafer (50).

5. The wafer fixture according to any one of claims 1-4, characterized in that, The air intake structure (40) includes an air intake hole, which is provided on the base (10) and / or the pressure head (20). One end of the air intake hole is used to communicate with the air source, and the other end extends to the side wall of the annular space (60) so as to blow air into the annular space (60).

6. The wafer fixture as described in claim 5, characterized in that, The air inlet includes an air inlet a (41), which is disposed on the base (10). The air outlet of the air inlet a (41) extends to the outer wall (61) of the annular space (60), and the air outlet is inclined toward the sealing ring (30); and / or The air inlet includes an air inlet b (42), which is provided on the pressure head (20). The air outlet of the air inlet b (42) extends to the inner wall (62) of the annular space (60), and the air outlet is inclined toward the sealing ring (30); and / or The air inlet includes an air inlet c (43), which is provided on the pressure head (20), and the air outlet of the air inlet c (43) extends to the top wall (63) of the annular space (60).

7. The wafer fixture as described in claim 5, characterized in that, The air intake structure (40) includes a plurality of air intake holes, which are configured as at least one group of air intake holes. Each group of air intake holes includes at least two air intake holes, and the at least two air intake holes in the same group of air intake holes are arranged at intervals along the circumference of the wafer fixture.

8. The wafer fixture according to any one of claims 1-4, characterized in that, The air intake structure (40) includes an air pipe (44), one end of which is used to communicate with the air source, and the other end extends into the annular space (60) or extends to be flush with the inner wall of the annular space (60).

9. The wafer fixture as described in claim 8, characterized in that, The air tube (44) is sandwiched between the base (10) and the pressure head (20); or the air tube (44) passes through the base (10); or the air tube (44) passes through the pressure head (20).

10. A semiconductor device, characterized in that, The semiconductor device includes: The wafer fixture as described in any one of claims 1-9; An electroplating cavity that is matched with the wafer fixture; The wafer jig is capable of carrying the wafer (50) to the electroplating cavity for electroplating.

11. An electroplating method, characterized in that, The electroplating method is performed using the wafer fixture according to any one of claims 1-9, and includes: Place the wafer (50) on the sealing ring (30); Before or after the pressure head (20) is placed on the base (10), gas is introduced into the air intake structure (40) to dry the outer unplated surface of the wafer (50).

12. The electroplating method as described in claim 11, characterized in that, The electroplating method further includes: Before the front side of the wafer (50) comes into contact with the electroplating solution, the outer non-electroplated surface of the wafer (50) is dried.

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