Receiver protector based on klystron

Abstract

The invention discloses a receiver protector based on a klystron, which realizes the working characteristics of the protector of normal amplification under low-power input and signal attenuation under high-power input by utilizing the characteristic that electromagnetic waves under different input powers and electron beams in a drift tube generate different degrees of beam-wave interaction. The receiver protector provided by the invention keeps the advantage of high tolerance power of a vacuum electronic device protector, the recovery time is reduced, and the receiver protector provided by the invention is small in size, low in cost and high in reliability compared with a common vacuum electronic device due to the non-magnetic structure. And the production consistency of the product is also improved due to the elimination of the magnet material with individual difference.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of electronic information technology, in particular to a receiver protector based on klystron. BACKGROUND

[0002] In order to cope with the impact of pulsed high power microwave, the signal receiver is usually provided with a receiver protector.

[0003] The existing receiver protector is usually realized based on solid-state device circuit, cyclotron wave protector and gas discharge switch tube, however, the power tolerance of the solid-state device circuit is low; the recovery time of the gas discharge switch tube after protection action is long; the structure of the cyclotron wave protector is heavy, and the individual difference of the magnet is not conducive to the consistency of mass production.

[0004] Therefore, the existing receiver protector has some defects in certain aspects, such as low power tolerance, long recovery time, large volume, high production cost and low consistency. SUMMARY

[0005] The present application solves the technical problem that the existing receiver protector has defects such as low power tolerance, long recovery time or large volume and high cost, and aims to provide a receiver protector based on klystron, which retains the advantage of high power tolerance of vacuum electronic device protector, and has the advantages of smaller volume, simpler structure, shorter recovery time, lower production cost and higher production consistency compared with the vacuum electronic device protector.

[0006] The present application is realized by the following technical scheme: In a first aspect, the present application provides a receiver protector based on klystron, comprising: a drift tube, an input cavity and an output cavity; One end of the drift tube is provided with a focusing electrode, and the other end is provided with a collecting electrode, and a cathode is arranged in the focusing electrode; The input cavity and the output cavity are arranged in the middle part of the drift tube, and the input cavity and the output cavity are communicated through the drift tube; The focusing electrode is used to shape the electrons emitted by the cathode to form an electron beam; The input cavity is used to input electromagnetic waves carrying signals into the drift tube, so that the electromagnetic waves and the electron beam have beam-wave interaction in the high-frequency gap overlapping the drift tube and the input cavity; The output cavity is used to output the electromagnetic waves after the beam-wave interaction with the electron beam to the subsequent circuit of the receiver.

[0007] Optionally, the two ends of the drift tube are circular openings, the middle part of the drift tube is a circular cross section, and the radius of the circular opening is greater than the radius of the circular cross section.

[0008] Optionally, the input cavity and the output cavity are both reentrant cylindrical resonant cavities.

[0009] Optionally, the collector is used to recycle the electron beam which has passed through the beam-wave interaction in the drift tube.

[0010] Optionally, the receiver protector further comprises an anode, which is used to apply a positive high voltage.

[0011] Optionally, the working mode of the receiver protector comprises a direct current state, a normal amplification state and a protection state.

[0012] Optionally, when the working mode of the receiver protector is the direct current state, the input cavity does not input the electromagnetic wave carrying signals into the drift tube, the electron beam emitted by the cathode passes through the input cavity and the output cavity with a complete passing rate through the drift tube, and enters the collector, and the input cavity does not set an input of a radio frequency signal.

[0013] Optionally, when the working mode of the receiver protector is the normal amplification state, the input cavity inputs the electromagnetic wave carrying signals into the output cavity through the high-frequency gap in the drift tube, wherein the input power of the electromagnetic wave is less than or equal to a preset power, and the preset power is used to indicate the power value when the receiver protector enters the protection state.

[0014] Optionally, when the working mode of the receiver protector is the protection state, the input cavity inputs the electromagnetic wave carrying signals into the output cavity through the high-frequency gap in the drift tube, wherein the input power of the electromagnetic wave is greater than the preset power.

[0015] Compared with the prior art, the present application has the following advantages and beneficial effects: The application provides a receiver protector based on a klystron, which is characterized in that: the electromagnetic wave carrying a signal is input into an output cavity through a drift tube by an input cavity, so that the input electromagnetic wave interacts with an electron beam in the output cavity to realize the following functions: when a low-power signal electromagnetic wave is input, the interaction degree is small, the modulation degree of the electron beam is shallow, the electron beam enters the output cavity gap through the drift tube at a high passing rate, and the signal electromagnetic wave is amplified; when a high-power signal electromagnetic wave is input, the interaction degree is large, the modulation degree of the electron beam is deep, the lateral fluctuation of the electron beam trajectory is large, more electrons directly hit the drift tube wall, the electrons passing through the drift tube to the output cavity gap are reduced, and the output signal electromagnetic wave power is attenuated, thereby realizing the protection function when a subsequent receiver receives a signal. Therefore, the receiver protector provided by the application realizes the protection of the subsequent sensitive circuit of the receiver by utilizing the different interaction degrees of the input carrier signal and the electron beam in the high-frequency gap. The design scheme of the protector improves the power tolerance, shortens the recovery time, avoids the use of heavy magnets, and thus reduces the volume and production cost. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the technical solutions of the example embodiments of the present application, the following will briefly introduce the drawings needed to be used in the examples. It should be understood that the following drawings only show some of the embodiments of the present application, and therefore should not be considered as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor. In the drawings: Figure 1 The general structure schematic diagram provided for the example of the present application; Figure 2 The working state schematic diagram provided for the example of the present application; Figure 3 The power change curve schematic diagram provided for the example of the present application.

[0017] Markings in the drawings and corresponding names of parts: 1-drift tube, 2-input cavity, 3-output cavity, 4-focusing electrode, 5-collector, 6-cathode, 7-anode. DETAILED DESCRIPTION

[0018] In order to make the purpose, technical scheme and advantages of the example of the present application more clear, the technical scheme of the example of the present application will be described clearly and completely in the following by combining the drawings in the example of the present application. Obviously, the described example is a part of the example of the present application, not all the examples. The components of the example of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0019] Therefore, the following detailed description of the embodiments of the application provided in the drawings is not intended to limit the scope of the application claimed, but merely represents selected embodiments of the application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the application without creative labor fall within the scope of the application.

[0020] It should be noted that similar reference numbers and letters represent similar items in the following drawings, and therefore, once an item is defined in one drawing, it need not be further defined and explained in subsequent drawings.

[0021] In the description of the application, it should be noted that if the terms "upper", "lower", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship when the product of the application is usually placed, and are only for the convenience of describing the application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the application.

[0022] In addition, if the terms "first", "second" and the like appear, they are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0023] It should be noted that the features in the embodiments of the application can be combined with each other without conflict.

[0024] The related terms involved in the present application are explained as follows: A klystron is a high-power vacuum electron device that converts direct current power into high-frequency microwave power using the principle of velocity modulation. The core of the klystron is a focused high-density electron beam, i.e., an electron beam, generated by an electron gun. The electron beam travels along an axis in a vacuum, and the klystron also includes a metal cavity structure of a resonant cavity, which has a specific geometric shape to produce resonance for a specific frequency of microwave signals.

[0025] Modern receiver protection schemes mainly focus on addressing the challenges brought by pulsed high-power microwaves. Existing receiver protector technologies usually include: solid-state device circuits, gas discharge switch tubes, and TRL (Transmit Receive Limiter Tube) tubes combined with solid-state limiters, and cyclotron wave protectors.

[0026] For solid-state device circuits, such as microwave board-level circuits or monolithic microwave integrated circuits, the protection threshold of such protector circuits is lower than that of other types of protectors, and excessive input power can easily cause irreversible damage to the devices in the protector circuit.

[0027] For the gas discharge switch TR (Transmit Receive Tube) tube and the solid-state limiter combined TRL tube, under the high-power working condition, the inert gas inside the tube body ionizes to generate free electrons between the electrodes, which makes the electrodes short-circuit, and forms a plasma reflection layer at the input end resonant window, which forms a stable isolation for the high-power signal, and then the signal amplitude is limited by the semiconductor limiter. However, the TRL tube has a large volume, and the deionization principle makes the recovery time longer, generally in the order of microseconds.

[0028] For the cyclotron wave protector, the increase of the input power increases the electron transverse displacement, and when exceeding a certain power threshold, the electrons are intercepted by the liner in the input cavity, and the output cavity has no output, thereby achieving the protection effect. Such a vacuum electron device has a heavy magnetic focusing system, a large volume, and is difficult to ensure the consistency of processing, which is not conducive to mass production.

[0029] Therefore, the existing receiver protectors have some defects in certain aspects, such as low power tolerance, long recovery time, large volume, high production cost, and low consistency.

[0030] Therefore, the present application provides a receiver protector based on a klystron, which inputs the signal-carrying electromagnetic wave into the output cavity through the drift tube through the input cavity, so that the input electromagnetic wave interacts with the electron beam in the high-frequency gap to realize that when a low-power signal electromagnetic wave is input, the degree of beam-wave interaction is small, the degree of electron beam modulation is shallow, the electron beam passes through the drift tube at a high rate, and the signal electromagnetic wave output signal is amplified; when a high-power signal electromagnetic wave is input, the degree of beam-wave interaction is large, the degree of electron beam modulation is deep, the transverse fluctuation of the electron beam trajectory is large, and more electrons directly bombard the drift tube wall to reduce the electrons passing through the drift tube to the output cavity, thereby causing the attenuation of the output signal electromagnetic wave power, and further realizing the protection function when the subsequent receiver receives the signal. Therefore, the receiver protector provided by the present application improves the power tolerance, shortens the recovery time, and avoids the use of heavy magnets, thereby reducing the volume and production cost.

[0031] The overall structure, working principle and technical effects of the receiver protector using the magnet-free klystron scheme provided by the present application will be described in detail below through embodiments and in conjunction with the drawings.

[0032] Embodiment Figure 1 The overall structure of the embodiment of the present application is provided, and the embodiment of the present application is combined Figure 1 The structure of the receiver protector based on the klystron provided by the present application is described.

[0033] As Figure 1As shown, the receiver protector based on the klystron provided by the embodiment of the application comprises a drift tube 1, an input cavity 2 and an output cavity 3, a focusing electrode 4 is arranged at one end of the drift tube 1, a collecting electrode 5 is arranged at the other end of the drift tube 1, a cathode 6 is arranged in the focusing electrode 4 in a matched mode, the input cavity 2 and the output cavity 3 are arranged in the middle part of the drift tube 1, and the input cavity 2 and the output cavity 3 are communicated through the drift tube 1.

[0034] The focusing electrode 4 is used to shape the electrons emitted by the cathode 6 to form an electron beam, that is, an electron gun is formed by the focusing electrode 4, the cathode 6 and the anode 7 to emit an axial electron beam, that is, an electron beam, the input cavity 2 is used to input the electromagnetic wave carrying signals into the high-frequency gap overlapped with the input cavity 2 and the drift tube 12 to make the electromagnetic wave interact with the electron beam, and the output cavity 3 is used to output the electromagnetic wave after the interaction with the electron beam. The electron gun formed by the focusing electrode 4, the cathode 6 and the anode 7, and the input cavity 2 and the output cavity 3 realizing the resonant cavity are used as the structure of the klystron.

[0035] Further, the anode 7 is used to apply a positive high voltage to generate an electric field, and the electric field accelerates and shapes the electron beam generated by the cathode 6, wherein the input cavity 2, the output cavity 3 and the collecting electrode 5 are all structures arranged in the anode 7.

[0036] Further, the input cavity 2 and the output cavity 3 are both reentrant cylindrical resonant cavities, and the input cavity 2 with the structure of the resonant cavity can input the electromagnetic wave carrying signals into the output cavity 3 through the drift tube 1, and the output cavity 3 can output the electromagnetic wave in the drift tube 1 to the subsequent circuit of the receiver.

[0037] Further, the two ends of the drift tube 1 are circular openings, the middle part of the drift tube 1 is a circular cross section, the radius of the circular opening is greater than the radius of the circular cross section, that is, the radius of the inlet and outlet of the drift tube 1 is gradually widened outward, and the shape of the resonant cavity is also adjusted to adapt to the widening of the radius of the two ends of the drift tube to adapt to the shape of the electron beam.

[0038] In the absence of the longitudinal magnetic field force, the electron beam emitted from the focusing electrode 4 and the cathode 6 will freely spread out due to the space charge effect when passing through the straight pipeline, and through the structure that the radius of the two ends of the drift tube 1 is gradually widened, the shape of the electron beam can be adapted, so that the electron beam can smoothly pass through the drift tube 1 without the constraint of the longitudinal magnetic field force.

[0039] Specifically, the electrons are emitted by the cathode 6 and focused into a beam by the focusing electrode 4, that is, the corresponding axial electron beam is generated by the klystron, and the generated electron beam is input into the drift tube 1, when no electromagnetic wave carrying signals is input into the input cavity 2, at this time, the electron beam in the drift tube 1 can pass through the gap of the output cavity 2 and enter the collecting electrode 5, and the electron beam generated by the cathode 6 is recycled by the collecting electrode 5.

[0040] Therefore, the receiver protector based on a klystron provided in this application introduces an electromagnetic wave carrying a signal into the output cavity via an input cavity and a drift tube. This allows the input electromagnetic wave to interact with the electron beam in the drift tube through the gap between the input and output cavities. When the input cavity does not introduce an electromagnetic wave carrying a signal into the drift tube, the electron beam can pass smoothly through the drift tube because the radii of the outlets at both ends of the drift tube are larger than the radius of the cross-section at the middle of the drift tube. This eliminates the need for a longitudinal magnetic field to constrain the electron beam in the drift tube. Thus, the receiver protector provided in this application can achieve smooth passage of the electron beam into the collector through the structure of the drift tube and the input and output cavities, thereby reducing costs and equipment size. At the same time, the free dispersion of electrons without a magnetic field allows the modulated electron beam to have a significant difference in throughput at different power levels, thus affecting the output signal power level and achieving the protector function of "normal amplification under low power input and signal attenuation under high power input".

[0041] Example Figure 2 This is a schematic diagram illustrating the working state of an embodiment of this application. Figure 2 As shown, based on the above embodiments, the operating modes of a receiver protector based on a klystron provided in this application include DC state, normal amplification state, and protection state.

[0042] Furthermore, if the receiver protector operates in DC mode, the electromagnetic wave carrying the signal is not input to input cavity 2. Therefore, no beam-wave interaction occurs in the high-frequency gap, and the electron beam is not modulated, i.e., as... Figure 2 As shown in (a), an electron beam, or axial electron beam, is generated by an electron gun consisting of a focusing electrode 4, a cathode 6, and an anode 7. The generated electron beam or electron beam is input into the drift tube 1. At this time, the electron beam in the drift tube 1 is not modulated by electromagnetic waves. Under DC conditions, the electron beam in the drift tube 1 can pass through the high-frequency system consisting of the input cavity 2 and the output cavity 3 with a 100% throughput.

[0043] Furthermore, if the receiver protector is operating in normal amplification mode, the electromagnetic wave carrying the signal is input into input cavity 2 and enters output cavity 3 through drift tube 1. The input power of the electromagnetic wave is less than or equal to the minimum power value required for the receiver protector to enter protection mode, i.e., the preset power. At this time, the signal is a low-power signal. Figure 2 As shown in (b), an electron beam, or axial electron beam, is generated by an electron gun consisting of a focusing electrode 4, a cathode 6, and an anode 7. The electron beam or electron beam passes through the drift tube 1 successively through the input cavity 2 and the output cavity 3 with a high throughput, and finally reaches the collecting electrode 5.

[0044] Wherein, when the electromagnetic wave carrying low input power signal passes through the high frequency gap of the input cavity 2 and the output cavity 3, at this time, the electromagnetic wave carrying low input power signal has a small degree of beam-wave interaction with the electron beam in the drift tube 1, and the degree of modulation is small for the electron beam in the drift tube 1, and the electron beam can also pass through the high frequency system composed of the input cavity 2 and the output cavity 3 at a high passing rate, and is recovered through the collector 5. For the electromagnetic wave carrying signal after the beam-wave interaction, it reaches the output cavity 3, at this time, the electromagnetic wave carrying signal has a small degree of amplification, that is, the receiver protector is in a normal amplification state.

[0045] Further, when the working mode of the receiver protector is the protection state, the electromagnetic wave carrying signal is input into the input cavity 2 and enters the output cavity 3 through the drift tube 1, wherein the input power of the electromagnetic wave is greater than the minimum power value of the receiver protector entering the protection state, that is, the preset power value indicating the power value when the receiver protector enters the protection state, and the signal at this time is a high power signal; as Figure 2 (c) shown, the electron gun composed of the focusing electrode 4, the cathode 6 and the anode 7 generates an electron beam, that is, a corresponding axial electron beam, and the electron beam passes through the drift tube 1, the input cavity 2 and the output cavity 3 in turn and finally reaches the collector 5 at a low passing rate.

[0046] Wherein, when the electromagnetic wave carrying high input power signal passes through the high frequency gap of the input cavity 2 and the output cavity 3, at this time, the electromagnetic wave carrying high input power signal has a large degree of beam-wave interaction with the electron beam in the drift tube 1, that is, the electron beam in the drift tube 1 is deeply modulated, and the amplitude of the transverse fluctuation of the electron beam trajectory is increased, and the lack of longitudinal magnetic field force will cause more and more electrons to directly impact on the wall of the drift tube 1, the passing rate of the electrons is low, and then the number of electrons that can reach the gap of the output cavity 3 to interact with the electromagnetic wave is reduced, and the output signal power is significantly reduced to an acceptable safe size, that is, the power attenuation of the electromagnetic wave carrying signal in the output cavity 3 is realized. With the gradual increase of the input power of the electromagnetic wave carrying signal in the input cavity 2, the output power of the electromagnetic wave carrying signal in the output cavity 3 is greatly attenuated, and at this time, the receiver protector is in the protection state.

[0047] In summary, the receiver protector based on the klystron provided by the embodiment of the application is in a normal amplification state under a low input power signal electromagnetic wave, and the output signal electromagnetic wave is amplified in power; under a high input power signal electromagnetic wave, the receiver protector is in a protection state, and the output signal electromagnetic wave is attenuated to an acceptable size and then output, so as to protect the sensitive elements of the subsequent circuit of the receiver.

[0048] Compared with solid-state circuits using transistors and diodes and the like elements which are easy to be burned by high-power signals, the receiver protector provided in the application uses an electron gun composed of a focusing electrode 4, a cathode 6 and an anode 7 as a vacuum electronic device, and a klystron structure composed of an input cavity 2 and an input cavity 3, so that the maximum withstand power of the receiver protector is improved; compared with a gas discharge switch tube which also has high-power protection capability but has a deionization recovery process in the order of microseconds, the recovery time of the receiver protector based on the klystron in the application is less than 200 nanoseconds, so that the signal blind area of the protector in the recovery period is reduced; compared with a cyclotron wave protector which is also a vacuum electronic device, the receiver protector based on the klystron in the application adopts a structure without a magnetic system, so that a large amount of space occupied by the magnetic system is saved, and the use of magnet materials with individual differences is avoided, thereby improving the consistency of mass production and reducing the production cost.

[0049] Therefore, the application provides a receiver protector based on a klystron, which inputs signal-carrying electromagnetic waves into an output cavity through a drift tube through an input cavity, so that the input electromagnetic waves and the electron beam in the drift tube have beam-wave interaction in a high-frequency gap, when low-power signal electromagnetic waves are input, the degree of beam-wave interaction is small, the degree of modulation of the electron beam is shallow, the electron beam passes through the drift tube at a high rate, and the signal electromagnetic waves are amplified; when high-power signal electromagnetic waves are input, the degree of beam-wave interaction is large, the degree of modulation of the electron beam is deep, the lateral fluctuation of the electron beam trajectory is large, and more electrons directly bombard the drift tube wall, so that the number of electrons reaching the output cavity is reduced, thereby causing the attenuation of the output signal electromagnetic wave power, and further realizing the protection function of the sensitive circuit elements of the subsequent receiver. Therefore, the receiver protector provided in the application improves the power withstand capability of the protector, shortens the recovery time and reduces the cost, and improves the consistency, by the beam-wave interaction between the input electromagnetic waves and the electron beam in the drift tube.

[0050] Further, taking a klystron-based receiver protector model with a center operating frequency of 5.8 GHz in a C band as an example, the effects of the klystron-based receiver protector provided in the application are described, the emission voltage of the model is 1 kV, the emission current is 50 mA, and the main performance parameters of the klystron protector are shown in Table 1 below: Table 1

[0051] Figure 3 The power variation curve diagram provided for the embodiment indicates the case that the output power of the klystron-based receiver protector model changes with the input power.

[0052] As Figure 3As shown, for the receiver protector model with a working frequency of 5.8 GHz, the receiver protector has a gradually decreasing amplification effect on the output power in the input power range of 0 to 4 W, at which time the receiver protector is in a normal amplification working state. When the input power is greater than 4 W, the degree of electronic modulation increases, and more and more electrons hit the drift tube wall, and the electrons reaching the output cavity gap decrease, so that the output signal power is attenuated, and the receiver protector enters a protection state.

[0053] Further, in the discussion of the maximum tolerance power, two cases of short pulses and long pulses are analyzed: when the input power increases to 350 W, the electric field intensity of the input cavity reaches the threshold value of making part of the electrons back to the cathode. In the long pulse state, the continuous electron bombardment will cause cumulative thermal load on the cathode surface, and eventually lead to irreversible damage. Therefore, the long pulse maximum tolerance power of the receiver protector is 350 W. As for short pulses such as ten nanosecond level pulses, the transient electron back bombardment is not enough to generate enough energy to damage the cathode, so it is necessary to determine the electric field breakdown critical point of the electric field exceeding 100 kV / mm. Finally, it is confirmed that the short pulse maximum tolerance power of the receiver protector provided in the application is 15 kW, and under this short pulse power input, the leakage power of the receiver protector is at the level of 10 W. The response time of the receiver protector is less than 150 nanoseconds, and the recovery time is less than 180 nanoseconds.

[0054] The above specific embodiments further illustrate the purpose, technical solutions and beneficial effects of the present application. It should be understood that the above description is only a specific embodiment of the present application and is not used to limit the protection scope of the present application. Any modification, equivalent replacement, improvement, etc. within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A receiver protector based on a klystron, characterized in that, include: Drift tube (1), input cavity (2) and output cavity (3); A focusing electrode (4) is provided at one end of the drift tube (1), and a collecting electrode (5) is provided at the other end. A cathode (6) is provided inside the focusing electrode (4). The input cavity (2) and the output cavity (3) are provided in the middle of the drift tube (1), and the input cavity (2) and the output cavity (3) are connected through the drift tube (1); The focusing electrode (4) is used to shape the electrons emitted by the cathode (6) to form an electron beam; The input cavity (2) is used to input an electromagnetic wave carrying a signal into the drift tube (1) so that the electromagnetic wave interacts with the electron beam in the high-frequency gap where the drift tube (1) and the input cavity (2) overlap. The output cavity (3) is used to output the electromagnetic wave after it interacts with the electron beam to the subsequent circuit of the receiver.

2. The receiver protector based on a klystron according to claim 1, characterized in that, The drift tube (1) has circular openings at both ends and a circular cross-section in the middle. The radius of the circular opening is greater than the radius of the circular cross-section.

3. The receiver protector based on a klystron according to claim 1, characterized in that, Both the input cavity (2) and the output cavity (3) are re-entrant cylindrical resonant cavities.

4. The receiver protector based on a klystron according to claim 1, characterized in that, The collecting electrode (5) is used to recover the electron beam that has undergone the injection-wave interaction in the drift tube (1).

5. The receiver protector based on a klystron according to claim 1, characterized in that, It also includes an anode (7) for applying a positive high voltage.

6. The receiver protector based on a klystron according to claim 1, characterized in that, The receiver protector has three operating modes: DC mode, normal amplification mode, and protection mode.

7. The receiver protector based on a klystron according to claim 6, characterized in that, If the receiver protector is in DC mode, the electron beam emitted by the cathode (6) passes through the drift tube (1) and the input cavity (2) and the output cavity (3) with full throughput, and enters the collector (5). The input cavity (2) is not equipped with radio frequency signal input.

8. The receiver protector based on a klystron according to claim 6, characterized in that, If the receiver protector is in the normal amplification state, the electromagnetic wave carrying the signal in the input cavity (2) is transmitted to the output cavity (3) through the high-frequency gap in the drift tube (1), wherein the input power of the electromagnetic wave is less than or equal to the preset power, wherein the preset power is used to indicate the power value when the receiver protector enters the protection state.

9. The receiver protector based on a klystron according to claim 8, characterized in that, If the receiver protector is in the protection state, the electromagnetic wave carrying the signal in the input cavity (2) is transmitted to the output cavity (3) through the high-frequency gap in the drift tube (1), wherein the input power of the electromagnetic wave is greater than the preset power.

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