Phosphorus-germanium-zinc device processing method and device, electronic equipment and storage medium

Abstract

The invention is suitable for the technical field of device processing, and provides a processing method and device of a phosphorus-germanium-zinc device, electronic equipment and a storage medium. The method comprises the steps that a raw material to be machined is pretreated, the pretreated raw material is cut according to the target size, and a blank is obtained; grinding the blank step by step by using grinding materials with different granularities, collecting the parallelism deviation of the blank in real time, adjusting grinding parameters based on the parallelism deviation of the blank, and stopping grinding when the parallelism deviation of the blank is within a first range to obtain a machined part; and the machined part is polished, the parallelism deviation of the machined part is collected in real time, polishing parameters are adjusted based on the parallelism deviation of the machined part, and when the parallelism deviation of the machined part is within a second range and the size of the machined part meets the target size condition, polishing is stopped, and the phosphorus-germanium-zinc device is obtained. According to the invention, the parallelism of the phosphorus-germanium-zinc device can be improved, and the optical performance of the phosphorus-germanium-zinc device is ensured.

Description

Technical Field

[0001] This application relates to the field of device processing technology, specifically to a processing method, apparatus, electronic device, and storage medium for a phosphorus-germanium-zinc device. Background Technology

[0002] Zinc germanium phosphorus (ZnGeP2) is an infrared nonlinear optical crystal material with a high nonlinear optical coefficient and a wide transmission range. With the rapid development of infrared optics technology, ZnGeP2 devices are increasingly widely used in various fields such as aerospace and medicine, and the industry's requirements for the optical performance of ZnGeP2 devices are also becoming increasingly stringent. In crystal device fabrication, parallelism, which refers to the degree of parallelism between two opposite faces of the device, is one of the important indicators for evaluating the device's optical performance. Poor parallelism can lead to scattering and refraction errors when light propagates within the device, affecting its optical function. Therefore, high parallelism in ZnGeP2 devices is crucial to ensuring their optical performance.

[0003] Currently, the main processing methods for phosphorus-germanium-zinc devices include traditional machining and grinding / polishing processes. However, traditional machining methods, such as sawing and milling, have low processing precision, and even when combined with simple grinding processes, they are insufficient to meet the high parallelism requirements of phosphorus-germanium-zinc devices. Compared to traditional machining, conventional grinding / polishing processes can improve the parallelism of devices to some extent, but their control over parallelism is unstable, and they still cannot meet the high parallelism requirements of phosphorus-germanium-zinc devices. Summary of the Invention

[0004] In view of this, embodiments of this application provide a processing method, apparatus, electronic device, and storage medium for phosphorus-germanium-zinc devices to solve the technical problem that related processing methods cannot improve the parallelism of phosphorus-germanium-zinc devices.

[0005] In a first aspect, embodiments of this application provide a method for processing a phosphorus-germanium-zinc device, comprising:

[0006] The raw materials to be processed are pre-treated, and then cut according to the target size to obtain a blank;

[0007] The blank is ground in stages using abrasives of different particle sizes, and the parallelism deviation of the blank is collected in real time. The grinding parameters are adjusted based on the parallelism deviation of the blank, and the grinding is stopped when the parallelism deviation of the blank is within a first range to obtain the processed part.

[0008] The workpiece is polished, and the parallelism deviation of the workpiece is collected in real time. The polishing parameters are adjusted based on the parallelism deviation of the workpiece. Polishing is stopped when the parallelism deviation of the workpiece is within the second range and the size of the workpiece meets the target size condition, so as to obtain the phosphorus germanium zinc device.

[0009] In one possible implementation of the first aspect, the first range includes a first deviation range and a second deviation range, wherein the minimum value of the first deviation range is greater than the maximum value of the second deviation range; the abrasive includes a first abrasive and a second abrasive with successively decreasing particle size; and the blank is divided into a primary blank and a secondary blank according to the degree of processing.

[0010] The process of using abrasives of different particle sizes to grind the blank in stages, collecting the parallelism deviation of the blank in real time, adjusting the grinding parameters based on the parallelism deviation, and stopping grinding when the parallelism deviation of the blank is within a first range to obtain a processed part includes:

[0011] The primary blank is subjected to stepwise initial grinding using a first abrasive of different particle sizes, and the parallelism deviation of the primary blank is collected in real time. The grinding parameters are adjusted based on the parallelism deviation of the primary blank, and the initial grinding is stopped when the parallelism deviation of the primary blank is within the first deviation range to obtain the secondary blank.

[0012] The secondary blank is finally ground using the second abrasive, and the flatness deviation and parallelism deviation of the secondary blank are collected in real time. Based on the flatness deviation and parallelism deviation of the secondary blank, the grinding parameters are adjusted. When the parallelism deviation of the secondary blank is within the second deviation range, the final grinding is stopped, and the processed part is obtained.

[0013] In one possible implementation of the first aspect, the stepwise initial grinding of the primary blank using first abrasives of different particle sizes includes:

[0014] The primary blank is initially ground using a first abrasive of the first particle size;

[0015] The roughness of the primary blank is collected in real time. When the roughness of the primary blank is within a preset roughness range, the primary blank is initially ground using a first abrasive of a second particle size; wherein the first particle size is larger than the second particle size.

[0016] In one possible implementation of the first aspect, the grinding parameters include grinding pressure and grinding time;

[0017] The adjustment of grinding parameters based on the parallelism deviation of the primary blank includes:

[0018] Detect whether the parallelism deviation of the primary blank is greater than the maximum value of the first deviation range;

[0019] If the parallelism deviation of the primary blank is greater than the maximum value of the first deviation range, then the grinding pressure and the grinding time are adjusted.

[0020] In one possible implementation of the first aspect, the step of stopping polishing to obtain a phosphorus-germanium-zinc device when the parallelism deviation of the workpiece is within a second range and the dimensions of the workpiece meet the target size condition includes:

[0021] The surface roughness and flatness deviation of the machined part are collected in real time;

[0022] Polishing is stopped when the parallelism deviation of the workpiece is within the second range, the size of the workpiece meets the target size condition, and the roughness and flatness deviation of the workpiece both meet the preset polishing conditions, thus obtaining a phosphorus-germanium-zinc device.

[0023] In one possible implementation of the first aspect, the target size condition includes the difference between the size of the workpiece and the target size within a first difference range;

[0024] The preset polishing conditions include that the roughness of the workpiece is less than a preset roughness threshold and the flatness deviation of the workpiece is less than a preset flatness deviation threshold.

[0025] In one possible implementation of the first aspect, the pretreatment includes cleaning;

[0026] The process of pre-treating the raw materials to be processed, and cutting the pre-treated raw materials according to the target dimensions to obtain a blank includes:

[0027] The raw materials are subjected to chemical cleaning and ultrasonic cleaning;

[0028] Based on the target size, the cleaned raw material is cut using a preset cutting line, and lubricant is applied to the cutting area during the cutting process. When the difference between the size of the raw material and the target size is within a second difference range, the cutting is stopped to obtain the blank.

[0029] Secondly, embodiments of this application provide a processing apparatus for phosphorus-germanium-zinc devices, comprising:

[0030] The cutting module is used to pre-process the raw materials to be processed, and cut the pre-processed raw materials according to the target size to obtain blanks.

[0031] The grinding module is used to grind the blank in steps using abrasives of different particle sizes, collect the parallelism deviation of the blank in real time, adjust the grinding parameters based on the parallelism deviation of the blank, and stop grinding when the parallelism deviation of the blank is within a first range to obtain the processed part.

[0032] The polishing module is used to polish the workpiece, collect the parallelism deviation of the workpiece in real time, adjust the polishing parameters based on the parallelism deviation of the workpiece, and stop polishing when the parallelism deviation of the workpiece is within a second range and the size of the workpiece meets the target size condition, so as to obtain a phosphorus germanium zinc device.

[0033] Thirdly, embodiments of this application provide an electronic device, including a memory and a processor. The memory stores a computer program that can run on the processor. When the processor executes the computer program, it implements the processing method of the phosphorus-germanium-zinc device as described in any of the first aspects.

[0034] Fourthly, embodiments of this application provide a computer-readable storage medium storing a computer program that, when executed by a processor, implements the processing method for the phosphorus-germanium-zinc device as described in any of the first aspects.

[0035] It is understood that the beneficial effects of the second to fourth aspects mentioned above can be found in the relevant descriptions in the first aspect mentioned above, and will not be repeated here.

[0036] The processing method, apparatus, electronic device, and storage medium for phosphorus-germanium-zinc devices provided in this application first pre-treat and cut the raw materials to obtain a blank. Then, the blank is distributed and ground using abrasives of different grit sizes. The grinding parameters are adjusted based on the parallelism deviation of the blank to obtain a workpiece that meets the requirements. The workpiece is then polished, and the polishing parameters are adjusted based on the parallelism deviation of the workpiece, ultimately resulting in a high-parallelism phosphorus-germanium-zinc device. By monitoring the parallelism of the blank or workpiece in real time during processing and adjusting the processing parameters at each stage based on the monitoring results, the parallelism of the blank or workpiece can be effectively controlled. This allows for a gradual and effective improvement in the parallelism of the blank or workpiece during processing, ultimately resulting in a high-parallelism phosphorus-germanium-zinc device, thereby ensuring the optical performance of the phosphorus-germanium-zinc device.

[0037] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this specification. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0039] Figure 1 This is a schematic flowchart of a method for processing a phosphorus-germanium-zinc device according to an embodiment of this application;

[0040] Figure 2 This is a schematic diagram of the structure of a processing apparatus for a phosphorus-germanium-zinc device provided in an embodiment of this application;

[0041] Figure 3 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Detailed Implementation

[0042] The present application will be described more clearly below with reference to specific embodiments. These embodiments will help those skilled in the art to further understand the function of the present application, but do not limit the present application in any way. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of the present application. These all fall within the protection scope of the present application.

[0043] It should be understood that, when used in this application specification and the appended claims, the term "comprising" indicates the presence of the described features, integrals, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or a collection thereof.

[0044] It should also be understood that the term “and / or” as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0045] In the description of this application and the appended claims, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0046] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0047] Furthermore, the term "multiple" mentioned in the embodiments of this application should be interpreted as two or more.

[0048] Currently, the main processing methods for phosphorus-germanium-zinc devices include traditional machining and grinding / polishing processes. However, traditional machining methods, such as sawing and milling, have low processing precision, and even when combined with simple grinding processes, they are insufficient to meet the high parallelism requirements of phosphorus-germanium-zinc devices. Compared to traditional machining, conventional grinding / polishing processes can improve the parallelism of devices to some extent, but their control over parallelism is unstable, and they still cannot meet the high parallelism requirements of phosphorus-germanium-zinc devices.

[0049] Based on the aforementioned shortcomings, the inventors discovered that the parallelism of the raw materials (or semi-finished products) can be monitored in real time at each stage of grinding and polishing. The processing parameters at each stage can be adjusted based on the monitoring results, thereby effectively controlling the parallelism of the semi-finished products at each stage. This allows for a gradual and precise improvement in the parallelism of the semi-finished products during processing, ultimately resulting in phosphorus-germanium-zinc devices with high parallelism, thus ensuring the optical performance of the phosphorus-germanium-zinc devices.

[0050] To make the objectives, technical solutions, and advantages of the present invention clearer, specific embodiments will be described below in conjunction with the accompanying drawings.

[0051] Figure 1 This is a schematic flowchart illustrating a method for fabricating a phosphorus-germanium-zinc device according to an embodiment of this application. Figure 1 As shown, the method in the embodiments of this application may include:

[0052] Step 101: Pre-treat the raw materials to be processed, and cut the pre-treated raw materials according to the target size to obtain blanks.

[0053] In this embodiment, the final phosphorus-germanium-zinc device to be processed is a cuboid device; therefore, the raw material to be processed is a qualified, block-shaped phosphorus-germanium-zinc raw material. Pretreatment may include cleaning, specifically chemical cleaning and ultrasonic cleaning.

[0054] For example, when a blank is obtained, the raw material can be chemically cleaned and ultrasonically cleaned. Based on the target size, the cleaned raw material is cut using a preset cutting line. During the cutting process, lubricant is applied to the cutting area. When the difference between the size of the raw material and the target size is within a second difference range, the cutting is stopped to obtain the blank.

[0055] Optionally, in this embodiment, the raw materials are first chemically cleaned by immersing them in a specific cleaning solution, such as a mixed solution containing appropriate amounts of hydrofluoric acid and ethanol, to remove impurities such as oil and oxides from the surface of the raw materials. Then, the raw materials in the cleaning solution are ultrasonically cleaned to further remove tiny particulate impurities adhering to the surface of the raw materials. For example, in this embodiment, a gripping device can be controlled to grip and immerse the raw materials in the cleaning solution, and then an ultrasonic cleaning device can be controlled to perform ultrasonic cleaning on the raw materials, thus achieving pretreatment of the raw materials.

[0056] Furthermore, in this embodiment, a surface image of the cleaned raw material can be acquired, and a defect identification process can be performed on the surface image based on an image recognition model. The identification results determine whether defects such as cracks or holes exist on the surface of the raw material, thereby eliminating defective materials and ensuring the quality of the raw materials used for processing. The image recognition model can be a neural network model, which takes the surface image of the raw material as input and outputs the location and type of the identified defects. Alternatively, relevant personnel can use an optical microscope to observe whether defects exist on the surface of the cleaned raw material, thus eliminating defective materials.

[0057] Subsequently, this embodiment can plan a cutting path based on the target size, i.e., the final size of the desired germanium-phosphorus zinc device, and the angle requirements of the device. Based on the obtained cutting path, the wire EDM machine is controlled to cut the cleaned raw material. A preset cutting wire can be used for cutting; this wire can be a diamond wire with a diameter smaller than a preset diameter threshold, which can be set as needed. Furthermore, the tension and cutting speed of the preset cutting wire are controlled during the cutting process.

[0058] It should be noted that the above-mentioned cutting path planning can be implemented using existing path planning techniques, which will not be elaborated here.

[0059] Optionally, during the cutting process, this embodiment may also apply a lubricant to the cutting area to cool and lubricate it, reducing damage to the raw material from cutting heat and force. The lubricant may be an aqueous solution containing rust inhibitors and lubricants.

[0060] In this way, through cutting the raw material, the dimensions of the raw material are gradually brought closer to the target dimensions. When the difference between the dimensions of the raw material and the target dimensions is within a second difference range, that is, when the differences between the dimensions of each side of the raw material and the corresponding target dimensions are all within the second difference range, cutting is stopped, and a blank is obtained. The blank obtained in this way has a machining allowance, providing sufficient material for subsequent grinding and polishing. The second difference range can be set to 0.5 to 1 mm.

[0061] Step 102: Grind the blank in stages using abrasives of different particle sizes, and collect the parallelism deviation of the blank in real time. Adjust the grinding parameters based on the parallelism deviation of the blank, and stop grinding when the parallelism deviation of the blank is within the first range to obtain the processed part.

[0062] For example, the first range includes a first deviation range and a second deviation range, where the minimum value of the first deviation range is greater than the maximum value of the second deviation range. The abrasive includes a first abrasive and a second abrasive with successively decreasing particle sizes. The blank is divided into a primary blank and a secondary blank according to the degree of processing, with the primary blank having a lower degree of processing than the secondary blank. To obtain a machined part with better roughness, parallelism, and flatness, this embodiment can use abrasives of different particle sizes to perform initial grinding and final grinding on the blank.

[0063] It should be noted that in this embodiment, real-time data acquisition refers to data acquisition performed at certain time intervals.

[0064] In some embodiments, obtaining the processed part may include steps A1 to A2.

[0065] A1. The primary blank is initially ground in steps using a first abrasive of different particle sizes, and the parallelism deviation of the primary blank is collected in real time. The grinding parameters are adjusted based on the parallelism deviation of the primary blank, and the initial grinding is stopped when the parallelism deviation of the primary blank is within the first deviation range to obtain the secondary blank.

[0066] A2. Use the second abrasive to perform final grinding on the secondary blank, and collect the flatness and parallelism deviation of the secondary blank in real time. Based on the flatness and parallelism deviation of the secondary blank, adjust the grinding parameters. When the parallelism deviation of the secondary blank is within the second deviation range, stop the final grinding to obtain the processed part.

[0067] For example, when performing stepwise initial grinding of a primary blank using first abrasives of different particle sizes, the primary blank can be initially ground using first abrasives of the first particle size, and the roughness of the primary blank can be collected in real time. When the roughness of the primary blank is within a preset roughness range, the primary blank can be initially ground using first abrasives of the second particle size. Wherein, the first particle size is larger than the second particle size.

[0068] In this embodiment, a high-precision surface grinding machine can be controlled to perform initial grinding on the primary blank. The first abrasive can be silicon carbide abrasive, etc., the first grit abrasive can be 100-200 mesh abrasive, the second grit abrasive can be 320-600 mesh abrasive, the smaller the mesh number, the larger the particle size of the abrasive, that is, the larger the particle size.

[0069] First, the primary blank is initially ground using a first abrasive of the first grit size at a first grinding pressure and a first grinding speed. The surface roughness of the primary blank is then measured using a surface roughness measuring instrument. When the roughness of the primary blank is within a preset roughness range, a smaller abrasive grit is used, i.e., a second-sized first abrasive grit is used for initial grinding. In this way, the roughness of the primary blank is gradually reduced by using different grit sizes of the first abrasive grit. The first grinding pressure can be 0.5–1.5 MPa, the first grinding speed can be 10–30 r / min, and the preset roughness range can be Ra 1–3 μm, where Ra represents the arithmetic mean deviation of the profile.

[0070] It should be noted that the first grit size, second grit size, first grinding pressure, first grinding speed, and preset roughness range mentioned above can all be set according to actual needs, and the values ​​are not specifically limited. In this embodiment, the grit size of the first abrasive is not limited to the first and second grit sizes, and more grit sizes can be set as needed. When there are more grit sizes, the specific implementation process and principle of using first abrasives of different grit sizes to perform step-by-step initial grinding of the primary blank can be referred to the aforementioned embodiment, and will not be repeated here.

[0071] Optionally, during the initial grinding of the primary blank, a high-precision parallelism measuring instrument, such as a laser interferometer, can be used to collect the parallelism deviation of the primary blank at regular intervals, such as 10-15 minutes. The grinding parameters can then be adjusted based on this deviation to initially improve the parallelism of the primary blank. Here, the parallelism of the primary blank refers to the degree of parallelism between its opposing surfaces. Parallelism can be characterized by parallelism deviation, and the two are inversely proportional; the smaller the parallelism deviation, the higher the parallelism of the opposing surfaces.

[0072] For example, the grinding parameters may include grinding pressure and grinding time. When adjusting the grinding parameters based on the parallelism deviation of the primary blank, it is possible to detect whether the parallelism deviation of the primary blank is greater than the maximum value of the first deviation range. If the parallelism deviation of the primary blank is greater than the maximum value of the first deviation range, then the grinding pressure and grinding time are adjusted.

[0073] In this embodiment, the first deviation range can be set to 0.05–0.1 mm. When the parallelism deviation of the primary blank is greater than 0.1 mm, it indicates that the parallelism of the primary blank has not yet met the requirements. At this time, the grinding pressure and grinding time are adjusted to reduce the parallelism deviation of the primary blank and improve its parallelism. It should be noted that when the parallelism deviation of any opposite surface of the primary blank is greater than 0.1 mm, the grinding pressure and grinding time for that opposite surface are adjusted. The first deviation range can also be set to other numerical ranges as needed.

[0074] Optionally, when adjusting the grinding pressure and grinding time, if the parallelism deviation of the primary blank is greater than or equal to the preset parallelism deviation threshold, the grinding pressure is increased appropriately and the grinding time is decreased to quickly remove the excess material from the primary blank. If the parallelism deviation of the primary blank is greater than the maximum value of the first deviation range but less than the preset parallelism deviation threshold, the grinding pressure is decreased appropriately and the grinding time is increased to slowly correct the parallelism of the primary blank.

[0075] When the parallelism deviation of the primary blank is within the first deviation range, that is, when the parallelism deviation of each opposite surface of the primary blank is within the first deviation range, it indicates that the parallelism of the primary blank meets the requirements. At this time, the initial grinding of the primary blank is stopped, and the secondary blank is obtained. The secondary blank will then undergo final grinding.

[0076] For example, in the final grinding of the secondary blank, this embodiment can control the fine grinding equipment and employ advanced planar grinding technology, such as floating grinding or magnetorheological grinding, to perform final grinding of the secondary blank, thereby improving the uniformity and precision of the grinding. During the final grinding process, grinding is performed using a second abrasive according to a second grinding pressure and a second grinding speed. The second abrasive can be an abrasive with a mesh size of 800–1200, the second grinding pressure can be 0.2–0.5 MPa, and the second grinding speed can be 5–15 r / min. Of course, the mesh size of the second abrasive, the second grinding pressure, and the second grinding speed can be set according to actual needs, and the values ​​are not specifically limited.

[0077] Optionally, during the final grinding of the secondary blank, the flatness deviation of the secondary blank can be detected every certain time, such as 5-10 minutes, using a high-precision flatness testing instrument such as an electronic level, and the parallelism deviation of the secondary blank can be detected using a high-precision parallelism measuring instrument such as a laser interferometer. Based on the flatness deviation and parallelism deviation of the secondary blank, the grinding parameters can be adjusted to adjust the flatness and parallelism of the secondary blank.

[0078] If the flatness deviation of the secondary blank exceeds the maximum flatness deviation threshold, and / or the parallelism deviation of the secondary blank exceeds the maximum value of the second deviation range, then the grinding pressure should be appropriately reduced and the grinding time increased to slowly correct the flatness and parallelism of the secondary blank. Here, the second deviation range can be set to 0.01–0.03 mm, or other numerical ranges as needed.

[0079] When the parallelism deviation of the secondary blank is within the second deviation range, it indicates that the parallelism of the secondary blank meets the requirements. At this point, the final grinding of the secondary blank is stopped, and the machined part is obtained. The machined part will then be polished.

[0080] In this embodiment, different abrasive particles are used to grind the blank during the initial grinding and final grinding processes, which can gradually reduce the surface roughness of the blank and remove the damaged layer on the surface of the blank.

[0081] Step 103: Polish the workpiece and collect the parallelism deviation of the workpiece in real time. Adjust the polishing parameters based on the parallelism deviation of the workpiece. Stop polishing when the parallelism deviation of the workpiece is within the second range and the size of the workpiece meets the target size condition, and obtain the phosphorus germanium zinc device.

[0082] This embodiment allows for the control of a chemical mechanical polishing (CMP) device to polish workpieces. Specifically, a polishing slurry, such as one containing appropriate amounts of cerium dioxide abrasive particles and chemical additives, can be used. The workpieces are polished according to a preset polishing pressure and a preset polishing speed. The preset polishing pressure can be set to 0.1–0.3 MPa, and the preset polishing speed can be set to 3–10 r / min. Furthermore, during the polishing process, a circulation system continuously replenishes the polishing slurry to ensure consistent polishing results.

[0083] Optionally, during the polishing process, the parallelism deviation of the workpiece can be detected at regular intervals using a parallelism measuring instrument such as a laser interferometer. Based on the parallelism deviation, the polishing parameters can be adjusted to improve the parallelism of the workpiece. For example, if the parallelism deviation of the workpiece exceeds the maximum value of the second range, the polishing pressure can be appropriately reduced and the polishing time increased to correct the parallelism of the workpiece.

[0084] In some embodiments, when obtaining the phosphorus-germanium-zinc device, the roughness and flatness deviation of the processed part can be collected in real time. When the parallelism deviation of the processed part is within a second range, the size of the processed part meets the target size condition, and the roughness and flatness deviation of the processed part both meet the preset polishing conditions, polishing is stopped, and the phosphorus-germanium-zinc device is obtained.

[0085] The target size condition includes the difference between the workpiece size and the target size within a first difference range. The preset polishing conditions include the workpiece roughness being less than a preset roughness threshold and the workpiece flatness deviation being less than a preset flatness deviation threshold. The second range can be 0–0.005 mm, with the maximum value of the second range being less than the minimum value of the second deviation range. The preset roughness threshold can be Ra 0.05 μm. Of course, the second range, preset roughness threshold, preset flatness deviation threshold, and first difference range can also be set according to actual needs, without specific limitations. The maximum value of the first difference range is less than the minimum value of the second difference range.

[0086] In this embodiment, a surface profilometer can be used to detect the roughness and flatness deviation of the workpiece. When the difference between the dimensions of each side of the workpiece and the corresponding target dimensions is within a first difference range, and the parallelism deviation of each opposite surface of the workpiece is within a second range, the roughness of the workpiece is less than a preset roughness threshold, and the flatness deviation of the workpiece is less than a preset flatness deviation threshold, it indicates that the dimensions of the workpiece, as well as the parallelism, roughness, and flatness of the workpiece, meet the corresponding requirements. At this point, polishing is stopped, and a high-parallelism phosphorus germanium zinc device is obtained.

[0087] Here, chemical mechanical polishing is used to remove the fine scratches left on the surface of the workpiece during the grinding process, while achieving high flatness and smoothness on the surface of the workpiece. This improves the surface quality of the final phosphorus-germanium-zinc device, thereby enhancing its optical performance, wear resistance, corrosion resistance, and service life.

[0088] In this embodiment, during the grinding and polishing process of raw materials, the quality parameters of the blank or workpiece, such as parallelism, flatness, and roughness, are monitored in real time. When these quality parameters deviate from the normal range, the corresponding processing parameters (such as grinding pressure, grinding time, polishing pressure, and polishing time) are adjusted based on these quality parameters. By adjusting the processing parameters, the quality parameters of the blank or workpiece are corrected, thereby improving the quality of the blank or workpiece and ensuring the stability of the processing process and the reliability of the processing quality. Ultimately, a high-parallelism phosphorus germanium zinc device is obtained. At the same time, this processing stability can effectively reduce the problem of inconsistent device quality caused by fluctuations in processing parameters, improve production efficiency and device qualification rate, and reduce production costs.

[0089] Furthermore, in this embodiment, considering the characteristics of low hardness, high brittleness, and anisotropy of the zinc-germanium phosphorus material, corresponding measures were taken at each stage of processing. High-precision wire cutting was used when cutting the raw material, and lubricating fluid was used to cool and lubricate the cutting area, reducing damage to the raw material. During grinding and polishing, processing parameters such as pressure and speed were precisely controlled to avoid problems such as cracks and edge chipping caused by material properties, thus improving processing quality and yield.

[0090] The processing method for phosphorus-germanium-zinc devices provided in this application first pre-treats and cuts the raw materials to obtain a blank. Then, the blank is distributed and ground using abrasives of different grit sizes. The grinding parameters are adjusted based on the parallelism deviation of the blank to obtain a workpiece that meets the requirements. The workpiece is then polished, and the polishing parameters are adjusted based on the parallelism deviation of the workpiece, ultimately resulting in a high-parallelism phosphorus-germanium-zinc device. By monitoring the parallelism of the blank or workpiece in real time during processing and adjusting the processing parameters at each stage based on the monitoring results, the parallelism of the blank or workpiece can be effectively controlled. This allows for a gradual and effective improvement in the parallelism of the blank or workpiece during processing, ultimately resulting in a high-parallelism phosphorus-germanium-zinc device, thereby ensuring the optical performance of the phosphorus-germanium-zinc device.

[0091] It should be understood that the sequence number of each step in the above embodiments does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0092] Figure 2 This is a schematic diagram of the processing apparatus for a phosphorus-germanium-zinc device according to an embodiment of this application. Figure 2 As shown, the processing apparatus for phosphorus, germanium, and zinc devices provided in this embodiment may include: a cutting module 201, a grinding module 202, and a polishing module 203.

[0093] The cutting module 201 is used to pre-process the raw materials to be processed, and cut the pre-processed raw materials according to the target size to obtain a blank.

[0094] The grinding module 202 is used to grind the blank in steps using abrasives of different particle sizes, collect the parallelism deviation of the blank in real time, adjust the grinding parameters based on the parallelism deviation of the blank, and stop grinding when the parallelism deviation of the blank is within a first range to obtain the processed part.

[0095] The polishing module 203 is used to polish the workpiece, collect the parallelism deviation of the workpiece in real time, adjust the polishing parameters based on the parallelism deviation of the workpiece, and stop polishing when the parallelism deviation of the workpiece is within the second range and the size of the workpiece meets the target size condition, so as to obtain the phosphorus germanium zinc device.

[0096] Optionally, the first range includes a first deviation range and a second deviation range, wherein the minimum value of the first deviation range is greater than the maximum value of the second deviation range; the abrasive includes a first abrasive and a second abrasive with successively decreasing particle sizes; the blank is divided into a primary blank and a secondary blank according to the degree of processing; the grinding module 202 is further used for:

[0097] The primary blank is subjected to stepwise initial grinding using a first abrasive of different particle sizes, and the parallelism deviation of the primary blank is collected in real time. The grinding parameters are adjusted based on the parallelism deviation of the primary blank, and the initial grinding is stopped when the parallelism deviation of the primary blank is within the first deviation range to obtain the secondary blank.

[0098] The secondary blank is finally ground using the second abrasive, and the flatness deviation and parallelism deviation of the secondary blank are collected in real time. Based on the flatness deviation and parallelism deviation of the secondary blank, the grinding parameters are adjusted. When the parallelism deviation of the secondary blank is within the second deviation range, the final grinding is stopped, and the processed part is obtained.

[0099] Optionally, the grinding module 202 is also used for:

[0100] The primary blank is initially ground using a first abrasive of the first particle size;

[0101] The roughness of the primary blank is collected in real time. When the roughness of the primary blank is within a preset roughness range, the primary blank is initially ground using a first abrasive of a second particle size; wherein the first particle size is larger than the second particle size.

[0102] Optionally, the grinding parameters include grinding pressure and grinding time; the grinding module 202 is also used for:

[0103] Detect whether the parallelism deviation of the primary blank is greater than the maximum value of the first deviation range;

[0104] If the parallelism deviation of the primary blank is greater than the maximum value of the first deviation range, then the grinding pressure and the grinding time are adjusted.

[0105] Optionally, the polishing module 203 is also used for:

[0106] The surface roughness and flatness deviation of the machined part are collected in real time;

[0107] Polishing is stopped when the parallelism deviation of the workpiece is within the second range, the size of the workpiece meets the target size condition, and the roughness and flatness deviation of the workpiece both meet the preset polishing conditions, thus obtaining a phosphorus-germanium-zinc device.

[0108] Optionally, the pretreatment includes cleaning; the cutting module 201 is further configured to:

[0109] The raw materials are subjected to chemical cleaning and ultrasonic cleaning;

[0110] Based on the target size, the cleaned raw material is cut using a preset cutting line, and lubricant is applied to the cutting area during the cutting process. When the difference between the size of the raw material and the target size is within a second difference range, the cutting is stopped to obtain the blank.

[0111] It should be noted that the information interaction and execution process between the above-mentioned devices / units are based on the same concept as the method embodiments of this application. For details on their specific functions and technical effects, please refer to the method embodiments section, and they will not be repeated here.

[0112] Figure 3 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. For example... Figure 3 As shown, the electronic device 300 of this embodiment includes a processor 310 and a memory 320, wherein the memory 320 stores a computer program 321 that can run on the processor 310. When the processor 310 executes the computer program 321, it implements the steps in any of the above-described method embodiments, for example... Figure 1 Steps 101 to 103 are shown. Alternatively, when processor 310 executes computer program 321, it implements the functions of each module / unit in the above-described device embodiments, for example... Figure 2 The functions of modules 201 to 203 are shown.

[0113] For example, computer program 321 may be divided into one or more modules / units, one or more of which are stored in memory 320 and executed by processor 310 to complete this application. The one or more modules / units may be a series of computer program instruction segments capable of performing a specific function, which describe the execution process of computer program 321 in electronic device 300.

[0114] Those skilled in the art will understand that Figure 3 This is merely an example of an electronic device and does not constitute a limitation on the electronic device. It may include more or fewer components than shown, or combinations of certain components, or different components, such as input / output devices, network access devices, buses, etc.

[0115] The processor 310 can be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The general-purpose processor can be a microprocessor or any conventional processor.

[0116] The memory 320 can be an internal storage unit of the electronic device, such as a hard drive or memory, or an external storage device, such as a plug-in hard drive, SmartMedia Card (SMC), Secure Digital (SD) card, or Flash Card. The memory 320 can also include both internal and external storage units. The memory 320 is used to store computer programs and other programs and data required by the electronic device. The memory 320 can also be used to temporarily store data that has been output or will be output.

[0117] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is merely an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. Furthermore, the specific names of the functional units and modules are only for easy differentiation and are not intended to limit the scope of protection of this application. The specific working process of the units and modules in the above system can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0118] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0119] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementations should not be considered beyond the scope of this invention.

[0120] In the embodiments provided by this invention, it should be understood that the disclosed devices / electronic devices and methods can be implemented in other ways. For example, the device / electronic device embodiments described above are merely illustrative. For instance, the division of modules or units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between devices or units may be electrical, mechanical, or other forms.

[0121] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0122] Furthermore, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0123] If the integrated module / unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, all or part of the processes in the methods of the above embodiments of the present invention can also be implemented by a computer program instructing related hardware. The computer program can be stored in a computer-readable storage medium, and when executed by a processor, it can implement the steps of the various method embodiments described above. The computer program includes computer program code, which can be in the form of source code, object code, executable files, or certain intermediate forms. The computer-readable medium can include: any entity or device capable of carrying the computer program code, a recording medium, a USB flash drive, a portable hard drive, a magnetic disk, an optical disk, a computer memory, a read-only memory (ROM), a random access memory (RAM), an electrical carrier signal, a telecommunication signal, and a software distribution medium, etc.

[0124] The above-described embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included within the protection scope of the present invention.

Claims

1. A method for processing a phosphorus-germanium-zinc device, characterized in that, include: The raw materials to be processed are pre-treated, and then cut according to the target size to obtain a blank; The blank is ground in stages using abrasives of different particle sizes, and the parallelism deviation of the blank is collected in real time. The grinding parameters are adjusted based on the parallelism deviation of the blank, and the grinding is stopped when the parallelism deviation of the blank is within a first range to obtain the processed part. The workpiece is polished, and the parallelism deviation of the workpiece is collected in real time. The polishing parameters are adjusted based on the parallelism deviation of the workpiece. Polishing is stopped when the parallelism deviation of the workpiece is within the second range and the size of the workpiece meets the target size condition, so as to obtain the phosphorus germanium zinc device.

2. The processing method of the phosphorus-germanium-zinc device according to claim 1, characterized in that, The first range includes a first deviation range and a second deviation range, wherein the minimum value of the first deviation range is greater than the maximum value of the second deviation range; the abrasive includes a first abrasive and a second abrasive with successively decreasing particle size; the blank is divided into a primary blank and a secondary blank according to the degree of processing. The process of using abrasives of different particle sizes to grind the blank in stages, collecting the parallelism deviation of the blank in real time, adjusting the grinding parameters based on the parallelism deviation, and stopping grinding when the parallelism deviation of the blank is within a first range to obtain a processed part includes: The primary blank is subjected to stepwise initial grinding using a first abrasive of different particle sizes, and the parallelism deviation of the primary blank is collected in real time. The grinding parameters are adjusted based on the parallelism deviation of the primary blank, and the initial grinding is stopped when the parallelism deviation of the primary blank is within the first deviation range to obtain the secondary blank. The secondary blank is finally ground using the second abrasive, and the flatness deviation and parallelism deviation of the secondary blank are collected in real time. Based on the flatness deviation and parallelism deviation of the secondary blank, the grinding parameters are adjusted. When the parallelism deviation of the secondary blank is within the second deviation range, the final grinding is stopped, and the processed part is obtained.

3. The processing method for the phosphorus-germanium-zinc device according to claim 2, characterized in that, The stepwise initial grinding of the primary blank using a first abrasive of different particle sizes includes: The primary blank is initially ground using a first abrasive of the first particle size; The roughness of the primary blank is collected in real time. When the roughness of the primary blank is within a preset roughness range, the primary blank is initially ground using a first abrasive of a second particle size; wherein the first particle size is larger than the second particle size.

4. The processing method of the phosphorus-germanium-zinc device according to claim 2, characterized in that, The grinding parameters include grinding pressure and grinding time; The adjustment of grinding parameters based on the parallelism deviation of the primary blank includes: Detect whether the parallelism deviation of the primary blank is greater than the maximum value of the first deviation range; If the parallelism deviation of the primary blank is greater than the maximum value of the first deviation range, then the grinding pressure and the grinding time are adjusted.

5. The method for processing the phosphorus-germanium-zinc device according to any one of claims 1 to 4, characterized in that, When the parallelism deviation of the processed part is within the second range and the size of the processed part meets the target size condition, polishing is stopped to obtain a phosphorus-germanium-zinc device, including: The surface roughness and flatness deviation of the machined part are collected in real time; Polishing is stopped when the parallelism deviation of the workpiece is within the second range, the size of the workpiece meets the target size condition, and the roughness and flatness deviation of the workpiece both meet the preset polishing conditions, thus obtaining a phosphorus-germanium-zinc device.

6. The processing method of the phosphorus-germanium-zinc device according to claim 5, characterized in that, The target size condition includes the difference between the size of the workpiece and the target size within a first difference range; The preset polishing conditions include that the roughness of the workpiece is less than a preset roughness threshold and the flatness deviation of the workpiece is less than a preset flatness deviation threshold.

7. The method for processing the phosphorus-germanium-zinc device according to any one of claims 1 to 4, characterized in that, The pretreatment includes cleaning; The process of pre-treating the raw materials to be processed, and cutting the pre-treated raw materials according to the target dimensions to obtain a blank includes: The raw materials are subjected to chemical cleaning and ultrasonic cleaning; Based on the target size, the cleaned raw material is cut using a preset cutting line, and lubricant is applied to the cutting area during the cutting process. When the difference between the size of the raw material and the target size is within a second difference range, the cutting is stopped to obtain the blank.

8. A processing apparatus for phosphorus, germanium, and zinc devices, characterized in that, include: The cutting module is used to pre-process the raw materials to be processed, and cut the pre-processed raw materials according to the target size to obtain blanks; The grinding module is used to grind the blank in steps using abrasives of different particle sizes, and to collect the parallelism deviation of the blank in real time. The grinding parameters are adjusted based on the parallelism deviation of the blank, and the grinding is stopped when the parallelism deviation of the blank is within a first range to obtain the processed part. The polishing module is used to polish the workpiece, collect the parallelism deviation of the workpiece in real time, adjust the polishing parameters based on the parallelism deviation of the workpiece, and stop polishing when the parallelism deviation of the workpiece is within a second range and the size of the workpiece meets the target size condition, so as to obtain a phosphorus germanium zinc device.

9. An electronic device comprising a memory and a processor, wherein the memory stores a computer program executable on the processor, characterized in that, When the processor executes the computer program, it implements the processing method of the phosphorus germanium zinc device as described in any one of claims 1 to 7.

10. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by the processor, it implements the processing method of the phosphorus germanium zinc device as described in any one of claims 1 to 7.

Images