Deposition mask

Abstract

There is provided a deposition mask for depositing a pattern on a display panel, the deposition mask including: an in-cell region and an out-cell region around the in-cell region; a first composite layer in the in-cell region and the out-cell region; and a support layer on a lower surface of the first composite layer in the out-of-cell region. The first composite layer includes one or more tensile layers including a tensile material having a stress greater than 0 and one or more compressive layers including a compressive material having a stress less than 0. Each layer has a characteristic value measured by multiplying the stress of each layer by the corresponding thickness of each layer. A ratio between a sum of characteristic values of the one or more stretched layers and a sum of characteristic values of the one or more compressed layers is in a range of about 0.5 to about 1.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2024-0073117, filed on June 4, 2024, in the Korean Intellectual Property Office, the entire contents (e.g., total contents) of which are incorporated herein by reference. TECHNICAL FIELD

[0002] Embodiments of the disclosure relate to a deposition mask. BACKGROUND

[0003] An organic light emitting display device can include an anode, a cathode, and an organic emission layer interposed between the anode and the cathode, which are arranged on a substrate. The organic emission layer can be formed using a deposition mask.

[0004] The above information disclosed in this Background section is only for enhancing the understanding of the background of the disclosure, and therefore it can contain information that does not constitute prior art. SUMMARY

[0005] Aspects of one or more embodiments of the disclosure are directed to a deposition mask that minimizes or reduces warpage (or deformation).

[0006] Additional aspects will be set forth in part in the description which follows, and, in part, will be apparent from the description, or can be learned by practice of the disclosed embodiments.

[0007] A deposition mask for depositing a pattern on a display panel according to one or more embodiments of the disclosure includes an intra-cell region and an extra-cell region around the intra-cell region, wherein the deposition mask has an opening in the intra-cell region; a first composite layer in the intra-cell region and the extra-cell region; and a support layer on a lower surface of the first composite layer in the extra-cell region, wherein the first composite layer includes one or more tensile layers including a tensile material having a stress greater than 0, and includes one or more compressive layers including a compressive material having a stress less than 0, wherein each layer of the one or more tensile layers and the one or more compressive layers has a characteristic value measured by multiplying a stress of each layer by a corresponding thickness of each layer, and a ratio between a sum of the characteristic values of the one or more tensile layers of the first composite layer and a sum of the characteristic values of the one or more compressive layers of the first composite layer is in a range of about 0.5 to about 1.

[0008] In one or more embodiments, the tensile material can include at least one selected from silicon nitride, molybdenum, and aluminum, and the compressive material can include at least one selected from silicon oxide and tungsten.

[0009] In one or more embodiments, a sum of characteristic values of the one or more tensile layers can equal a sum of characteristic values of the one or more compressive layers.

[0010] In one or more embodiments, the first composite layer can include a first layer and a second layer between the first layer and the support layer, wherein the one or more tensile layers can include one of the first layer and the second layer, and the one or more compressive layers can include the other of the first layer and the second layer, a ratio between a characteristic value of the first layer and a characteristic value of the second layer can be in a range of about 0.5 to about 1, the characteristic value of the first layer can be measured by multiplying a stress of the first layer by a thickness of the first layer, and the characteristic value of the second layer can be measured by multiplying a stress of the second layer by a thickness of the second layer.

[0011] In one or more embodiments, one of the first layer and the second layer can include silicon nitride, the other of the first layer and the second layer can include silicon oxide, and a thickness of the one of the first layer and the second layer can be about 4.5 times to about 18 times a thickness of the other of the first layer and the second layer.

[0012] In one or more embodiments, a thickness of the one of the first layer and the second layer can be in a range of about 1 µm to about 1.4 µm, and a thickness of the other of the first layer and the second layer can be in a range of about 0.05 µm to about 0.31 µm.

[0013] In one or more embodiments, a thickness of the one of the first layer and the second layer can be in a range of about 1 µm to about 1.4 µm, and a thickness of the other of the first layer and the second layer can be in a range of about 0.11 µm to about 0.15 µm.

[0014] In one or more embodiments, the first composite layer can include a first layer, a second layer between the first layer and the support layer, and a third layer on the first layer, wherein the one or more tensile layers can include the second layer and the third layer, and the one or more compressive layers can include the first layer, a ratio between a sum of characteristic values of the second layer and the third layer and a characteristic value of the first layer can be in a range of about 0.5 to about 1, the characteristic value of the first layer can be measured by multiplying a stress of the first layer by a thickness of the first layer, the characteristic value of the second layer can be measured by multiplying a stress of the second layer by a thickness of the second layer, and the characteristic value of the third layer can be measured by multiplying a stress of the third layer by a thickness of the third layer.

[0015] In one or more embodiments, the second layer and the third layer can include silicon nitride, and the first layer includes silicon oxide, and a total thickness of the second layer and the third layer can be about 4.5 times to about 18 times a thickness of the first layer.

[0016] In one or more embodiments, a thickness of each of the second layer and the third layer can be in a range of about 0.5 µm to about 0.7 µm, and a thickness of the first layer can be in a range of about 0.11 µm to about 0.15 µm.

[0017] In one or more embodiments, the deposition mask can further include a second composite layer on a lower surface of the support layer, and the first composite layer and the second composite layer can have a structure symmetrical with respect to the support layer.

[0018] In one or more embodiments, the first composite layer can include the first layer and the second layer between the first layer and the support layer, the second composite layer can include the fourth layer and the third layer between the fourth layer and the support layer, the one or more tensile layers can include one of the first layer and the second layer and one of the third layer and the fourth layer, the one or more compressive layers can include the other of the first layer and the second layer and the other of the third layer and the fourth layer, a sum of characteristic values of the first layer and the second layer can be equal to a sum of characteristic values of the third layer and the fourth layer, the characteristic value of the first layer can be measured by multiplying a stress of the first layer by a thickness of the first layer, the characteristic value of the second layer can be measured by multiplying a stress of the second layer by a thickness of the second layer, the characteristic value of the third layer can be measured by multiplying a stress of the third layer by a thickness of the third layer, and the characteristic value of the fourth layer can be measured by multiplying a stress of the fourth layer by a thickness of the fourth layer.

[0019] In one or more embodiments, the first layer and the fourth layer can include the same material, and the second layer and the third layer can include the same material.

[0020] In one or more embodiments, a thickness of the first layer can be equal to a thickness of the fourth layer, and a thickness of the second layer can be equal to a thickness of the third layer.

[0021] A deposition mask for depositing a pattern on a display panel according to one or more embodiments of the disclosure includes an in-cell area and an out-cell area around the in-cell area; a support layer in the out-cell area; a first composite layer on the support layer and including a plurality of layers, wherein one of the plurality of layers is in the in-cell area; and a second composite layer below the support layer and including the plurality of layers, wherein, in the in-cell area, the first composite layer has an opening corresponding to a pixel of the display panel, and the first composite layer and the second composite layer have a structure symmetrical with respect to the support layer.

[0022] In one or more embodiments, some of the plurality of layers of each of the first composite layer and the second composite layer can include a tensile material having a stress greater than 0, and others of the plurality of layers of each of the first composite layer and the second composite layer can include a compressive material having a stress less than 0.

[0023] In one or more embodiments, the tensile material can include at least one selected from silicon nitride, molybdenum, and aluminum, and the compressive material can include at least one selected from silicon oxide and tungsten.

[0024] In one or more embodiments, the first composite layer can include a first layer and a second layer between the first layer and the support layer, the second composite layer can include a fourth layer and a third layer between the fourth layer and the support layer, a sum of a characteristic value of the first layer and a characteristic value of the second layer can be equal to a sum of a characteristic value of the third layer and a characteristic value of the fourth layer, the characteristic value of the first layer can be measured by multiplying a stress of the first layer by a thickness of the first layer, the characteristic value of the second layer can be measured by multiplying a stress of the second layer by a thickness of the second layer, the characteristic value of the third layer can be measured by multiplying a stress of the third layer by a thickness of the third layer, and the characteristic value of the fourth layer can be measured by multiplying a stress of the fourth layer by a thickness of the fourth layer.

[0025] In one or more embodiments, the first layer and the fourth layer can include the same material, and the second layer and the third layer can include the same material.

[0026] In one or more embodiments, a thickness of the first layer can be equal to a thickness of the fourth layer, and a thickness of the second layer can be equal to a thickness of the third layer.

[0027] The specific details of one or more embodiments include in the detailed description and drawings. BRIEF DESCRIPTION OF DRAWINGS

[0028] The accompanying drawings are included to provide a further understanding of the present disclosure and are incorporated in and constitute a part of this specification. The drawings illustrate example embodiments of the present disclosure and, together with the description, serve to explain principles of the present disclosure.

[0029] Figure 1 is an exploded schematic perspective view showing a deposition apparatus according to one or more embodiments of the present disclosure.

[0030] Figure 2 is a plan view showing a mask according to one or more embodiments of the present disclosure. Figure 1 is a cross-sectional view of the deposition apparatus of

[0031] Figure 3 is a plan view showing a mask according to one or more embodiments of the present disclosure.

[0032] Figure 4 is a magnified view of an intra-cell region of a mask according to one or more embodiments of the present disclosure.

[0033] Figure 5 is a magnified view of an intra-cell region of a mask according to one or more embodiments of the present disclosure.Figure 3 a cross-sectional view taken along line I-I' of

[0034] Figure 6 and Figure 7 are cross-sectional views for describing warping of a mask according to one or more embodiments of the present disclosure.

[0035] Figure 8 is a graph showing warping of thickness of layers according to a mask included in Figure 5

[0036] Figure 9 is a cross-sectional view of a mask according to one or more embodiments of the present disclosure. Figure 3

[0037] Figure 10 is a cross-sectional view of a mask according to one or more embodiments of the present disclosure. Figure 3

[0038] Figure 11 is a cross-sectional view of a mask according to one or more embodiments of the present disclosure. Figure 3

[0039] Figure 12 is a cross-sectional view of a mask according to one or more embodiments of the present disclosure. Figure 3

[0040] Figure 13 is a cross-sectional view of a mask according to one or more embodiments of the present disclosure. Figure 3 DETAILED DESCRIPTION The present disclosure can be modified in a number of alternative forms, and thus specific embodiments will be illustrated in the drawings and described in more detail below. It is, however, to be understood that no limitation of the present disclosure is intended to be present by the particular form disclosed but, instead, all modifications, equivalents, and alternatives falling within the spirit and scope of the present disclosure are to be encompassed by the present disclosure.

[0041] Hereinafter, example embodiments will be described in greater detail with reference to the accompanying drawings. However, the present disclosure can be implemented in various different forms, and should not be construed as being limited to only the embodiments shown herein. Rather, these embodiments are provided as examples so that the present disclosure will be thorough and complete, and will fully convey the aspects and features of the present disclosure to those skilled in the art. As such, processes, elements, and techniques that are not essential to an understanding of the aspects and features of the present disclosure can not be described.

[0042] Hereinafter, example embodiments will be described in greater detail with reference to the accompanying drawings. However, the present disclosure can be implemented in various different forms, and should not be construed as being limited to only the embodiments shown herein. Rather, these embodiments are provided as examples so that the present disclosure will be thorough and complete, and will fully convey the aspects and features of the present disclosure to those skilled in the art. As such, processes, elements, and techniques that are not essential to an understanding of the aspects and features of the present disclosure can not be described.

[0043] ​​​​​It will also be understood that, when used in this specification, the terms "comprises", "comprising", "includes", "including", "has", "having", "contains", "containing" and variations thereof do not exclude the presence of other features, integers, steps, operations, elements, and / or components, but

[0044] Unless otherwise explicitly provided by the disclosure, when expressions such as "at least one of (a), (b), and (c)", "one or more of (a), (b), and (c)", "a of (a), (b), and (c)", and other phrases in conjunction with the conjunctions are used hereafter, if written as a conjunction list, they should be understood to include an exclusive disjunction, and vice versa. For example, the expressions "at least one of a, b, and c", "one selected from a group consisting of a, b, and c", "at least one selected from a, b, and c", "at least one of a, b, and c", "at least one of a, b, and c", "at least one of a to c", indicate only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof. "At least any one of X, Y, and Z" and "at least any one selected from a group consisting of X, Y, and Z" can be interpreted as each of X, Y, and Z and / or a (for example, any suitable) combination of two or more of X, Y, and Z (for example, XYZ, XY, YZ, and XZ).

[0045] As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0046] It will be understood that, although the terms "first", "second", "third", etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Therefore, a first element, component, region, layer or section described below could be termed a second element, component, region, layer or section without departing from the spirit and scope of the present disclosure.

[0047] For ease of explanation, spatially relative terms, such as "on", "under", "lower", "beneath", "above", "upper", and the like, can be used herein for describing one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or in operation, in addition to the orientation depicted in the figures. For example, if a device in the figures is inverted, elements described as "under" or "beneath" other elements or features would then be oriented "on" the other elements or features. Thus, the exemplary term "under" can encompass both an orientation of above and below. The device can be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0048] It will be understood that when an element, such as a zone, layer, film, region, or portion, is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element or one or more intervening elements can be present. In addition, it will be understood that when an element is referred to as being "between" two elements, it can be the only element between the two elements or one or more intervening elements can also be present.

[0049] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0050] As used herein, the term "use" and variations thereof, can be considered synonymous with the term "utilize" and variations thereof, respectively.

[0051] Throughout the drawings and written description, like reference numerals designate like elements, so that repeated description can not be provided unless otherwise noted. In the drawings, the relative sizes of elements, layers, and regions can be exaggerated for clarity.

[0052] Various embodiments are described with reference to the drawings. Accordingly, one of ordinary skill in the art will recognize that the shapes and other features illustrated in the drawings are intended to convey concepts, not to limit the scope of the embodiments disclosed herein. Thus, one or more embodiments disclosed herein should not be construed as limited to the particular shapes and other features as illustrated, but should be construed broadly consistent with the concepts disclosed herein.

[0053] Figure 1 is a schematic perspective view showing a deposition apparatus according to one or more embodiments of the present disclosure. Figure 2is a cross-sectional view of a deposition apparatus according to one or more embodiments of the disclosure. Figure 1 The first direction DR1, the second direction DR2, and the third direction DR3 shown are merely examples defined for convenience of description, and the first direction DR1, the second direction DR2, and the third direction DR3 can be relative concepts and can be converted to different directions.

[0054] Referring to Figure 1 and Figure 2 , the deposition apparatus 10 can include a mask MK, a first electrostatic chuck ESC1, a second electrostatic chuck ESC2, and a magnetic disk MP. The deposition apparatus 10 can further include a chamber and a deposition source. The mask MK, the first electrostatic chuck ESC1, the second electrostatic chuck ESC2, the magnetic disk MP, and the deposition source can be arranged in a space in the chamber.

[0055] The deposition apparatus 10 can deposit a deposition material on a wafer WF (or a substrate). The deposition material can be formed on the wafer WF in the chamber. The deposition material can include an organic material, but the disclosure is not limited thereto. For example, the deposition material can include a material for forming an emission layer of an organic light emitting element to be manufactured. The deposition material is stored in the deposition source. For example, the deposition source can be positioned below the mask MK (and the second electrostatic chuck ESC2), and the deposition material can be sprayed toward the mask MK and the wafer WF.

[0056] The wafer WF can be a mother substrate or a mother substrate to be deposited. A display panel circuit (or a pixel circuit (e.g., a transistor or an anode)) can be formed on the wafer WF. When a deposition process is performed, the wafer WF can be arranged between the first electrostatic chuck ESC1 and the mask MK.

[0057] The wafer WF can be fixed by the first electrostatic chuck ESC1. The first electrostatic chuck ESC1 can fix the wafer WF using an electrostatic force and can bring the wafer WF into close contact with the mask MK. The first electrostatic chuck ESC1 can be coupled to the wafer WF to prevent or limit movement of the wafer WF during alignment of a deposition process and during deposition of a deposition material.

[0058] The mask MK (or a deposition mask) can be arranged below the wafer WF. For example, the mask MK can be arranged between the wafer WF and the deposition source, and can pattern the deposition material on one surface of the wafer WF through the mask MK (or an opening of the mask MK). For example, the mask MK can be a shadow mask made of a silicon wafer or a fine metal mask. The mask MK can be fixed or supported by the second electrostatic chuck ESC2.

[0059] A magnetic disk MP can be disposed on the first electrostatic chuck ESC1 (and the wafer WF). The magnetic disk MP can be a mobile sample holder for fixing movement of the wafer WF. For example, the magnetic disk MP can generate a magnetic field to pull the mask MK, so the mask MK and the wafer WF can be in close contact with each other. Accordingly, during the deposition process, the risk of lifting between the mask MK and the wafer WF can be reduced, and the shadow effect generated during the deposition process can be improved.

[0060] Figure 3 is a plan view illustrating a mask according to one or more embodiments of the disclosure. Figure 4 is a magnified view of an intra-cell region of the mask. For convenience of description, anodes AD1 to AD3 of the wafer WF (see, for example, Figure 1 and Figure 2 are further illustrated. Figure 5 is a cross-sectional view illustrating the mask of Figure 3 according to one or more embodiments of the disclosure. For example, Figure 5 is a cross-sectional view taken along line I-I' of Figure 3 illustrating the mask MK according to one or more embodiments of the disclosure.

[0061] Referring to Figures 3 to 5 , the mask MK can have a circular planar shape, but the disclosure is not limited thereto. The planar shape of the mask MK can be changed in one or more suitable ways.

[0062] The mask MK can include an intra-cell region INC (or a first region) and an extra-cell region OUTC (or a second region) around the intra-cell region INC.

[0063] The intra-cell region INC can correspond to each cell (or a region to be separated into each display panel) of the wafer WF (see, for example, Figure 1 and Figure 2 ).

[0064] An opening OP passing through the mask MK can be formed in the intra-cell region INC. The deposition material can not be blocked (or can pass through the opening OP in the intra-cell region INC) in the opening OP in the intra-cell region INC, and the deposition material can be deposited only in a specific region of the wafer WF aligned to face the opening OP. For example, referring to Figure 4, the openings OP of the mask MK are aligned to face the first anode AD1 (or the first sub-pixel SP1) of the wafer WF. In one or more embodiments, the emission layer of the first sub-pixel SP1 can be deposited only on the first anode AD1. Similarly, if (for example, when) the openings OP of the mask MK are aligned to face the second anode AD2 of the wafer WF, the emission layer of the second sub-pixel SP2 can be deposited on the second anode AD2. If (for example, when) the openings OP of the mask MK are aligned to face the third anode AD3 of the wafer WF, the emission layer of the third sub-pixel SP3 can be deposited on the third anode AD3.

[0065] Referring to Figure 5 , the mask MK can include a support layer SPL and a first composite layer CL1.

[0066] The support layer SPL can be arranged below (or on a lower surface of) the first composite layer CL1 in the outer cell region OUTC. The support layer SPL can support the first composite layer CL1, and can impart resistance to deformation (for example, resistance to deformation due to heat and / or deformation caused by external force) to the first composite layer CL1. For example, the support layer SPL can include silicon. For example, the support layer SPL can include stainless steel, invar, nickel (Ni), cobalt (Co), nickel alloy, and / or nickel-cobalt alloy, etc. having a relatively low coefficient of thermal expansion.

[0067] The first composite layer CL1 is arranged in the inner cell region INC and the outer cell region OUTC, and can include a plurality of layers (or thin films). The thickness of the first composite layer CL1 in the third direction DR3 can be several μm (for example, in the range of about 1 μm to about 2 μm). In the range in which the thickness of the first composite layer CL1 is several μm, the number of the plurality of layers can be changed in one or more suitable ways. For example, the number of the plurality of layers can be in the range of 2 to 10, but the present disclosure is not limited thereto. In a plane perpendicular (for example, perpendicular) to the third direction DR3, the plurality of layers can have substantially the same area.

[0068] In one or more embodiments, the first composite layer CL1 can include one or more tensile layers (or layers of a first type or kind or first stress layers) and one or more compressive layers (or layers of a second type or kind or second stress layers). The one or more tensile layers can include a tensile material having a stress greater than 0, and the one or more compressive layers can include a compressive material having a stress less than 0. For example, the tensile material can include at least one selected from among silicon nitride (SiN x , molybdenum (Mo), and aluminum (Al) in a thin film state having a thickness of about 1 μm. In a thin film state having a thickness of about 1 μm, the silicon nitride (SiN x) can have a film stress of about 20 MPa, molybdenum (Mo) can have a film stress of about 1,125 MPa, and aluminum (Al) can have a film stress of about 96.6 MPa. For example, the compressive material can include at least one selected from among silicon oxide (SiO x , in a thin film state, silicon oxide (SiO x ) can have a film stress of about -180 MPa, and tungsten (W) can have a film stress of about -1,072 MPa. Stress is an inherent property of a material, and it is difficult to finely control the stress itself, and it is also difficult to manufacture a film having a stress outside of a specific range. For example, it is difficult to manufacture a layer having a compressive stress outside of a range of 10 MPa to 300 MPa using silicon nitride (SiN x ), and it is difficult to manufacture a layer having a tensile stress using silicon oxide (SiO x ).

[0069] In one or more embodiments, a ratio between a sum of characteristic values (e.g., tensile force or compressive force) of the one or more tensile layers of the first composite layer CL1 and a sum of characteristic values (e.g., tensile force or compressive force) of the one or more compressive layers of the first composite layer CL1 can be in a range of about 0.5 to about 1. The characteristic value can be a value obtained by multiplying a stress of a corresponding layer by a thickness thereof.

[0070] In one or more embodiments, the sum of the characteristic values of the one or more tensile layers of the first composite layer CL1 can be equal to the sum of the characteristic values of the one or more compressive layers of the first composite layer CL1. In other words, the sum of the characteristic values (e.g., tensile force and compressive force) of the plurality of layers of the first composite layer CL1 can be substantially 0. The sum of the characteristic values can be represented by Equation 1.

[0071] Equation 1

[0072] Here, F can be a characteristic value (e.g., a tensile force or a compressive force occurring in each layer in a horizontal direction perpendicular (e.g., perpendicular to) to the third direction DR3) of each layer (or thin film), σ can be a stress of a corresponding layer, and t can be a thickness (i.e., a thickness in the third direction DR3) of the corresponding layer. Hereinafter, the term "characteristic value" will be represented by "force" of a corresponding layer.

[0073] When the sum of forces of the plurality of layers is not 0 or outside of a reference range, warping (or deformation) can occur in the first composite layer CL1 (or the mask MK). In one or more embodiments, the first composite layer CL1 or the mask MK can be damaged due to warping, or the mask MK in which warping occurs can be misaligned with the wafer WF. Here, the reference range can correspond to a case in which a ratio of a force corresponding to a tensile force (i.e., a total force of one or more tensile layers) to a force corresponding to a compressive force (i.e., a total force of one or more compressive layers) among forces of the plurality of layers is in a range of about 0.5 to about 1. Accordingly, in an embodiment, a force, which corresponds to a total amount of a tensile force and a compressive force generated in each layer, that is a critical factor causing warping in the mask MK can be set to 0 or minimized or reduced to prevent damage and misalignment of the mask MK.

[0074] In one or more embodiments, the first composite layer CL1 can include a first layer L1 and a second layer L2. The second layer L2 can be disposed between the first layer L1 and the support layer SPL.

[0075] One of the first layer L1 and the second layer L2 can include a tensile material, and the other of the first layer L1 and the second layer L2 can include a compressive material. A ratio of a force of one of the first layer L1 and the second layer L2 to a force of the other of the first layer L1 and the second layer L2 can be in a range of about 0.5 to about 1. Here, the force of the first layer L1 can be a value obtained by multiplying a stress of the first layer L1 by a thickness t1 thereof, and the force of the second layer L2 can be a value obtained by multiplying a stress of the second layer L2 by a thickness t2 thereof. For example, a magnitude of the force of the first layer L1 can be equal to a magnitude of the force of the second layer L2. For example, a sum of the force of the first layer L1 and the force of the second layer L2 can be 0.

[0076] In one or more embodiments, the second layer L2 can include silicon nitride (SiN x ), and the first layer L1 can include silicon oxide (SiO x ). A film stress of the silicon nitride (SiN x ) can be about 20 MPa, and a film stress of the silicon oxide (SiO x ) can be about -180 MPa.

[0077] In such an embodiment, for example, a thickness t2 of the second layer L2 including the silicon nitride (SiN x ) can be about 1 / 3 to about 1 / 2 of a thickness t1 of the first layer L1 including the silicon oxide (SiO xabout 18 times the thickness t1 of the first layer L1. For example, the thickness t1 of the first layer L1 can be about 0.05 times to about 0.22 times the thickness t2 of the second layer L2. For example, the thickness t1 of the first layer L1 can be in a range of about 0.05 pm to about 0.31 pm, and the thickness t2 of the second layer L2 can be in a range of about 1 pm to about 1.4 pm.

[0078] The ratio between the thickness t2 of the second layer L2 and the thickness t1 of the first layer L1 to minimize the total force of the first layer L1 and the second layer L2 can be about 9:1. For example, the thickness t2 of the second layer L2 can be about 1.00 pm, and the thickness t1 of the first layer L1 can be about 0.11 pm. In such an embodiment, the sum of the force of the second layer L2 (i.e., 20 MPa x 1 pm = 20) and the force of the first layer L1 (i.e., -180 MPa x 0.11 pm = -20) can be 0. For example, the thickness t2 of the second layer L2 can be about 1.10 pm, and the thickness t1 of the first layer L1 can be about 0.122 pm. For example, the thickness t2 of the second layer L2 can be about 1.20 pm, and the thickness t1 of the first layer L1 can be about 0.133 pm. For example, the thickness t2 of the second layer L2 can be about 1.30 pm, and the thickness t1 of the first layer L1 can be about 0.144 pm. For example, the thickness t2 of the second layer L2 can be about 1.40 pm, and the thickness t1 of the first layer L1 can be about 0.155 pm. For example, the thickness t2 of the second layer L2 can be in a range of about 1 pm to about 1.4 pm, and the thickness t1 of the first layer L1 can be in a range of about 0.11 pm to about 0.15 pm.

[0079] Although it has been described that the second layer L2 includes silicon nitride (SiN x ) and the first layer L1 includes silicon oxide (SiO x ), the present disclosure is not limited thereto. For example, the first layer L1 can include silicon nitride (SiN x ) and the second layer L2 can include silicon oxide (SiO x ). In such an embodiment, the thickness t1 of the first layer L1 including silicon nitride (SiN x ) can be in a range of about 1 pm to about 1.4 pm, and the thickness t2 of the second layer L2 including silicon oxide (SiO x ) can be in a range of about 0.11 pm to about 0.15 pm.

[0080] Figure 6 and Figure 7 are cross-sectional views for describing warping of a mask according to one or more embodiments of the present disclosure. Figure 8 is a graph showing a relationship between a thickness of a first layer L1 and a thickness of a second layer L2 according to an embodiment of the present disclosure. Figure 5a graph of the warpage of the thickness of the layer in the mask.

[0081] Referring to Figure 6 , the mask MK_C can be in a state of being placed on a flat plate. It is assumed that the total force (or sum of forces) of the first composite layer CL1 of the mask MK_C is not 0. The warpage will be described without including the support layer SPL for imparting resistance to deformation.

[0082] Due to the force of the first composite layer CL1, warpage can occur in the mask MK_C. For example, if (e.g., when) the magnitude of the force (e.g., compressive force) of the first layer L1 of the first composite layer CL1 is less than the magnitude of the force (e.g., tensile force) of the second layer L2, the edge of the mask MK_C can rise higher in the third direction DR3 than the center portion of the mask MK_C. Conversely, if (e.g., when) the magnitude of the force (e.g., compressive force) of the first layer L1 of the first composite layer CL1 is greater than the magnitude of the force (e.g., tensile force) of the second layer L2, the center portion of the mask MK_C can rise higher in the third direction DR3 than the edge of the mask MK_C.

[0083] Referring to Figure 7 , the mask MK_C can be fixed by Figure 1 and Figure 2 the second electrostatic chuck ESC2 and the magnetic plate MP of Figure 2 . The mask MK_C can be in close contact with the wafer WF of , and thus can be substantially flat. However, due to the force of the first composite layer CL1, warpage can occur in the intra-cell region INC (or film) of the mask MK_C. For example, if (e.g., when) the magnitude of the force of the first layer L1 is greater than the magnitude of the force of the second layer L2, the intra-cell region INC of the mask MK_C can be warped to protrude in the third direction DR3. In some cases, the intra-cell region INC of the mask MK_C can protrude in the third direction DR3 by about 100 µm to about 200 µm.

[0084] Figure 6 In a process of unfolding the mask MK_C from Figure 7 to the state of Figure 6 , the mask MK_C can be damaged. For example, a mask MK_C in which much warpage occurs in Figure 7 or may be damaged.

[0085] In one or more embodiments, even if the mask MK_C is not damaged, the mask MK_C can be misaligned with the wafer WF because the intra-cell region INC is in a warped state. Referring to Figure 4For example, although the opening OP of the mask MK_C is aligned with the first anode AD1 in a portion of the cell region INC, the opening OP may warp from the first anode AD1 in the remaining portion of the cell region INC along the first direction DR1 and / or the second direction DR2. In this case, the emitter layer may not be deposited properly, and defects may occur in the display panel.

[0086] Therefore, a mask MK according to one or more embodiments may include a first composite layer CL1 in which the total force is minimized or reduced, and thus damage and misalignment of the mask MK can be prevented or reduced.

[0087] Reference Figure 5 and Figure 8 Including silicon nitride (SiN) as a stretching material x The thickness of the layer (e.g., Figure 5 The thickness t2 of the second layer L2 is fixed at 1 μm. This is because it includes silicon oxide (SiO2) as a compressive material. x The thickness of the layer (e.g., Figure 5 The thickness t1 of the first layer L1 varies between 0 Å and 2,000 Å, thus altering the degree of warping of the mask MK. The degree of warping of the mask MK indicates the extent to which the mask MK warps. Figure 6 The distance protruding in the third direction DR3 or in the direction opposite to the third direction DR3.

[0088] When including silicon oxide (SiO) x When the thickness of the first composite layer CL1 is 0 (i.e., if (for example, when) the thickness of the first composite layer CL1 is only composed of silicon nitride (SiN) x The layer of the mask MK experiences a warping of approximately 0.1 mm (e.g., see [reference]). Figure 8 ).

[0089] When including silicon oxide (SiO) x When the thickness of the layer is increased to 500 Å, the warpage of the mask MK decreases to approximately 0.035 mm (e.g., see...). Figure 8 A 500 Å thick layer including silicon oxide (SiO2). x The compressive force of the layer can be approximately -9 (e.g., -180 MPa × 0.05 μm = -9), and it can be a layer containing silicon nitride (SiN) with a thickness of 1 μm. x The tensile strength of the layer (e.g., 20 MPa × 1 μm = 20) is about 45%.

[0090] When including silicon oxide (SiO) x When the thickness of the layer is 1,000 Å, the warpage of the mask MK decreases to approximately 0.03 mm (e.g., see...). Figure 8). In a section in which the thickness of the layer including silicon oxide (SiO x is in the range of 500 Å to 1,000 Å, the warpage of the mask MK is minimized or reduced.

[0091] When the thickness of the layer including silicon oxide (SiO x ) is increased to 2,000 Å, the warpage of the mask MK is increased to about 0.17 mm (for example, see Figure 8 ). In the corresponding section, unlike the mask MK_C shown in Figure 6 , the warpage occurs in the direction opposite to the third direction DR3.

[0092] When the tensile force of the layer including silicon nitride (SiN x ) having a thickness of 1 μm is 20 (i.e., 20 MPa x 1 μm), the thickness of silicon oxide (SiO x ) having a compressive force of 50% of the tensile force can be about 0.055 μm (i.e., 10 / -180 MPa), and the thickness of silicon oxide (SiO x ) having a compressive force of 100% of the tensile force can be about 0.11 μm (for example, 20 / -180 MPa). For example, it is confirmed that if (for example, when) the ratio of the force of the layer including silicon nitride (SiN x ) to the force of the layer including silicon oxide (SiO x ) is in the range of about 0.5 to about 1, the warpage of the mask MK is minimized or reduced.

[0093] Figure 9 is a cross-sectional view of a mask according to one or more embodiments of the present disclosure. Figure 3

[0094] Referring to Figure 9 , the first composite layer CL1 of the mask MK can include three layers L1, L2, and L5. Compared to one or more embodiments of Figure 5 , the mask MK can further include a fifth layer L5. Except for the fifth layer L5, the embodiments of Figure 9 are substantially the same or similar to the embodiments of Figure 5 , and thus a redundant description can not be provided.

[0095] The fifth layer L5 can be disposed on the first layer L1.

[0096] ​In one or more embodiments, one of the first layer L1, the second layer L2, and the fifth layer L5 can include a different material from the remaining ones of the first layer L1, the second layer L2, and the fifth layer L5. For example, one of the first layer L1, the second layer L2, and the fifth layer L5 can include a tensile material (or a compressive material), and the remaining ones of the first layer L1, the second layer L2, and the fifth layer L5 can include a compressive material (or a tensile material).

[0097] In one or more embodiments, the second layer L2 and the fifth layer L5 can include a tensile material, and the first layer L1 can include a compressive material. A ratio of a total force of the second layer L2 and the fifth layer L5 to a force of the first layer L1 can be in a range of about 0.5 to about 1. Here, the force of the fifth layer L5 can be a value obtained by multiplying a stress of the fifth layer L5 by a thickness t5 of the fifth layer L5. For example, a magnitude of the total force of the second layer L2 and the fifth layer L5 can be equal to a magnitude of the force of the first layer L1. For example, the total force of the second layer L2 and the fifth layer L5 and the force of the first layer L1 can be 0.

[0098] In one or more embodiments, the second layer L2 and the fifth layer L5 can include silicon nitride (SiN x ), and the first layer L1 can include silicon oxide (SiO x ). A film stress of the silicon nitride (SiN x ) can be about 20 MPa, and a film stress of the silicon oxide (SiO x ) can be about -180 MPa.

[0099] In such embodiments, for example, a sum of the thickness t2 of the second layer L2 and the thickness t5 of the fifth layer L5 can be about 4.5 times to about 18 times a thickness t1 of the first layer L1. For example, the thickness t1 of the first layer L1 can be about 0.05 times to about 0.22 times the sum of the thickness t2 of the second layer L2 and the thickness t5 of the fifth layer L5. For example, the thickness t1 of the first layer L1 can be in a range of about 0.05 µm to about 0.31 µm, and the sum of the thickness t2 of the second layer L2 and the thickness t5 of the fifth layer L5 can be in a range of about 1 µm to about 1.4 µm.

[0100] For example, the thickness t2 of the second layer L2 and the thickness t5 of the fifth layer L5 can each be about 0.50 pm, and the thickness t1 of the first layer L1 can be about 0.11 pm. In such an embodiment, the sum of the force of the first layer L1 (i.e., -180 MPa x 0.11 pm = -20), the force of the second layer L2 (i.e., 20 MPa x 0.5 pm = 10), and the force of the fifth layer L5 (e.g., 20 MPa x 0.5 pm = 10) can be 0. For example, the thickness t2 of the second layer L2 and the thickness t5 of the fifth layer L5 can each be about 0.55 pm, and the thickness t1 of the first layer L1 can be about 0.122 pm. For example, the thickness t2 of the second layer L2 and the thickness t5 of the fifth layer L5 can each be about 0.60 pm, and the thickness t1 of the first layer L1 can be about 0.133 pm. For example, the thickness t2 of the second layer L2 and the thickness t5 of the fifth layer L5 can each be about 0.65 pm, and the thickness t1 of the first layer L1 can be about 0.144 pm. For example, the thickness t2 of the second layer L2 and the thickness t5 of the fifth layer L5 can each be about 0.70 pm, and the thickness t1 of the first layer L1 can be about 0.155 pm. For example, the thickness t2 of the second layer L2 and the thickness t5 of the fifth layer L5 can each be in a range of about 0.5 pm to about 0.7 pm, and the thickness t1 of the first layer L1 can be in a range of about 0.11 pm to about 0.15 pm.

[0101] Figure 10 is a cross-sectional view illustrating a mask according to one or more embodiments of the present disclosure. Figure 3 is a cross-sectional view illustrating a mask according to one or more embodiments of the present disclosure.

[0102] Referring to Figure 5 and Figure 10 , the mask MK can further include a second composite layer CL2. Except for the second composite layer CL2, Figure 10 is substantially the same as or similar to the embodiment of Figure 5 , and thus a redundant description can not be provided. When deposition is performed (i.e., single-sided deposition) only on the upper surface of the support layer SPL by plasma-enhanced chemical vapor deposition (PECVD), the mask MK according to one or more embodiments of Figure 5 can be formed, and if (e.g., when) deposition is performed (i.e., double-sided deposition) on the upper surface and the lower surface of the support layer SPL by low pressure chemical vapor deposition (LPCVD), the mask MK according to one or more embodiments of Figure 10 can be formed.

[0103] The second composite layer CL2 is disposed under (or on a lower surface of) the support layer SPL in the cell outer region OUTC and can include a plurality of layers (or thin films). A thickness of the second composite layer CL2 in the third direction DR3 can be several μm (e.g., in a range of about 1 μm to about 2 μm). Similar to the first composite layer CL1, the number of layers of the second composite layer CL2 can be variously changed in a range in which the thickness of the second composite layer CL2 is several μm. For example, the number of layers of the second composite layer CL2 can be in a range of 2 to 10, but the present disclosure is not limited thereto. Even (e.g., when) the first composite layer CL1 and the second composite layer CL2 are simultaneously (e.g., concurrently) deposited on both surfaces (e.g., opposite surfaces) of the support layer SPL, the number of layers and the thickness of the first composite layer CL1 can be different from the number of layers and the thickness of the second composite layer CL2 through surface treatment of one surface of the support layer SPL. The plurality of layers of the second composite layer CL2 can have substantially the same area in a plane perpendicular (e.g., to) the third direction DR3.

[0104] In one or more embodiments, the second composite layer CL2 can include one or more tensile layers and one or more compressive layers.

[0105] In one or more embodiments, the force (or eigenvalue) of the plurality of layers of the first composite layer CL1 can be equal to the force of the plurality of layers of the second composite layer CL2. In such embodiments, similar to the first composite layer CL1, a ratio between a sum of the force (or eigenvalue) of the one or more tensile layers of the second composite layer CL2 and a sum of the force of the one or more compressive layers of the second composite layer CL2 can be in a range of about 0.5 to about 1.

[0106] In one or more embodiments, the second composite layer CL2 can include a third layer L3 and a fourth layer L4. The third layer L3 and the fourth layer L4 can be sequentially disposed on a lower surface of the support layer SPL. The third layer L3 can be disposed between the support layer SPL and the fourth layer L4.

[0107] One of the third layer L3 and the fourth layer L4 can include a tensile material, and the other of the third layer L3 and the fourth layer L4 can include a compressive material.

[0108] In one or more embodiments, the first layer L1 and the fourth layer L4 can include the same material, and the second layer L2 and the third layer L3 can include the same material. For example, the first layer L1 and the fourth layer L4 can include silicon oxide (SiO x ), and the second layer L2 and the third layer L3 can include silicon nitride (SiN x ). In one or more embodiments, a total force of the first composite layer CL1 and the second composite layer CL2 can be represented by Equation 2.

[0109] Equation 2

[0110] Here, σ1 can be a stress of the first layer L1 and the fourth layer L4, σ2 can be a stress of the second layer L2 and the third layer L3, t1, t2, t3, and t4 can be thicknesses of the first layer L1, the second layer L2, the third layer L3, and the fourth layer L4, respectively.

[0111] The first composite layer CL1 and the second composite layer CL2 can be arranged on different surfaces of the support layer SPL and can affect warping of the mask MK in different directions. Accordingly, if (for example, when) the total force of the first composite layer CL1 is equal to the total force of the second composite layer CL2, warping of the mask MK (for example, warping in the outer cell region OUTC) can be minimized or reduced. For example, the first composite layer CL1 and the second composite layer CL2 can have a structure that is symmetrical with respect to the support layer SPL. For example, the thickness t1 of the first layer L1 can be equal to the thickness t4 of the fourth layer L4, and the thickness t2 of the second layer L2 can be equal to the thickness t3 of the third layer L3. The first layer L1 and the second layer L2 have been described with reference to FIGS. 1A and 1B. Figure 5 Examples of the thickness of each of the first layer L1 and the second layer L2 are described. For example, the third layer L3 including silicon nitride (SiN x ) can have a thickness t3 in a range of about 1 µm to about 1.4 µm, and the fourth layer L4 including silicon oxide (SiO x ) can have a thickness t4 in a range of about 0.11 µm to about 0.15 µm.

[0112] Figure 11 is a cross-sectional view of a mask according to one or more embodiments of the disclosure. Figure 3

[0113] Referring to Figure 9 and Figure 11 , the mask MK can further include a second composite layer CL2. Except for the second composite layer CL2, Figure 11 Embodiments of Figure 9 may be substantially the same as or similar to embodiments of Figure 11 The second composite layer CL2 of Figure 10 may be similar to the second composite layer CL2 of . Accordingly, redundant descriptions can not be provided.

[0114] In one or more embodiments, the force (or eigenvalue) of the plurality of layers of the first composite layer CL1 can be equal to the force of the plurality of layers of the second composite layer CL2. This can be represented by Equation 3.

[0115] Equation 3

[0116] Here, σ1, σ2, σ3, σ4, and σ5 can be stresses of the first layer L1, the second layer L2, the third layer L3, the fourth layer L4, and the fifth layer L5, respectively, and t1, t2, t3, t4, and t5 can be thicknesses of the first layer L1, the second layer L2, the third layer L3, the fourth layer L4, and the fifth layer L5, respectively.

[0117] For example, if (e.g., when) the first layer L1 and the fourth layer L4 include the same material, and the second layer L2, the third layer L3, and the fifth layer L5 include the same material, the total force of the first composite layer CL1 and the second composite layer CL2 can be represented by "σ1(t1-t4)+σ2(t2+t5-t3)=0".

[0118] Reference has been made to Figure 9 Examples of the thickness of each of the first layer L1, the second layer L2, and the fifth layer L5 are described. In addition, examples of the thickness of each of the third layer L3 and the fourth layer L4 are described. Accordingly, examples of the thickness of each layer can not be repeated. Figure 10 Examples of the thickness of each of the first layer L1, the second layer L2, and the fifth layer L5 are described. In addition, examples of the thickness of each of the third layer L3 and the fourth layer L4 are described. Accordingly, examples of the thickness of each layer can not be repeated.

[0119] Figure 12 is a cross-sectional view illustrating a mask according to one or more embodiments of the disclosure. Figure 3 is a cross-sectional view illustrating a mask according to one or more embodiments of the disclosure.

[0120] Reference is made to Figure 10 and Figure 12 , except that only a single layer is arranged in the in-cell region INC, Figure 12 Embodiments of Figure 10 may be substantially the same or similar as embodiments of

[0121] The first layer L1 among the plurality of layers of the first composite layer CL1 can be arranged in the in-cell region INC. The force in the in-cell region INC and warping (or deformation) according to the force can be determined by the first layer L1. Accordingly, a ratio between the force (and thickness) of the first layer L1 and the force (and thickness) of the second layer L2 is not particularly limited, and the thickness t1 of the first layer L1 including a material having a low stress can be minimized or reduced to minimize or reduce warping of the in-cell region INC. For example, the first layer L1 can include silicon nitride (SiN x ).

[0122] In one or more embodiments, the force in the out-cell region OUTC can be determined by both the first composite layer CL1 and the second composite layer CL2.

[0123] In one or more embodiments, the first composite layer CL1 and the second composite layer CL2 can have a structure symmetrical with respect to the support layer SPL. In such embodiments, warping in the out-of-cell region OUTC can be minimized or reduced.

[0124] In one or more embodiments, the first layer L1 and the fourth layer L4 can include the same material, and the second layer L2 and the third layer L3 can include the same material. For example, the first layer L1 and the fourth layer L4 can include silicon nitride (SiN x ), and the second layer L2 and the third layer L3 can include silicon oxide (SiO x ). In one or more embodiments, the total force of the first composite layer CL1 and the second composite layer CL2 can be represented by Equation 2 above.

[0125] For example, the thickness t1 of the first layer L1 can be equal to the thickness t4 of the fourth layer L4, and the thickness t2 of the second layer L2 can be equal to the thickness t3 of the third layer L3. Examples of the thickness of each of the first layer L1 and the second layer L2 have been described with reference to Figure 5 . Because the thickness of one of the third layer L3 and the fourth layer L4 can be equal to the thickness of one of the second layer L2 and the first layer L1 and the thickness of the other of the third layer L3 and the fourth layer L4 can be equal to the thickness of the other of the second layer L2 and the first layer L1, examples of the thickness of each layer can not be repeated.

[0126] Figure 13 is a cross-sectional view illustrating a mask according to one or more embodiments of the disclosure. Figure 3 is a cross-sectional view illustrating a mask according to one or more embodiments of the disclosure.

[0127] With reference to Figure 5 and Figure 13 , embodiments of Figure 13 may be substantially the same as or similar to embodiments of Figure 5 . Therefore, redundant descriptions can not be provided.

[0128] The first layer L1 among the plurality of layers of the first composite layer CL1 can be disposed in the in-cell region INC. The force in the in-cell region INC and warping (or deformation) according to the force can be determined by the first layer L1. Accordingly, the thickness t1 of the first layer L1 including a material having a low stress can be minimized or reduced to minimize or reduce warping of the in-cell region INC.

[0129] The force in the out-of-cell region OUTC can be determined by the first composite layer CL1. As with reference to Figure 5As described, a ratio between a total force of the one or more tensile layers of the first composite layer CL1 and a total force of the one or more compressive layers of the first composite layer CL1 can be in a range of about 0.5 to about 1. For example, a sum of the characteristic values of the one or more tensile layers of the first composite layer CL1 can be equal to a sum of the characteristic values of the one or more compressive layers of the first composite layer CL1. For example, a sum of the characteristic values (or tensile and compressive forces) of the plurality of layers of the first composite layer CL1 can be substantially zero. In such embodiments, warping of the out-of-cell region OUTC can be minimized or reduced.

[0130] In one or more embodiments, the first composite layer CL1 can include a first layer L1 and a second layer L2. One of the first layer L1 and the second layer L2 can include a tensile material, and the other of the first layer L1 and the second layer L2 can include a compressive material. For example, the second layer L2 can include silicon nitride (SiN x ), and the first layer L1 can include silicon oxide (SiO x ).

[0131] As examples of the thickness of each of the first layer L1 and the second layer L2 have been described with reference to Figure 5 the above description, examples of the thickness of each layer can not be repeated.

[0132] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and / or the present

[0133] Further, the use of “can” in describing embodiments of the disclosure indicates “one or more embodiments of the disclosure” are.

[0134] As used herein, the terms “substantially,” “approximately,” and similar terms are used as approximation terms and not as degree terms, and are intended to account for variations in measurement values or calculated values that would be recognized by those of ordinary skill in the art. “Substantially” as used herein includes the recited value and means that, considering the measurement at issue and the error associated with measuring a particular quantity (i.e., limitations of the measurement system), within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art. For example, “substantially” can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the recited value.

[0135] Furthermore, any numerical range recited herein is intended to include all sub-ranges of the same numerical precision, as expressly stated; for example, a range of 1.0 to 10.0 should be interpreted to include any sub-range between (and including) the recited minimum and maximum values, of 1.0 to 10.0, such as, 2.4 to 7.6, etc. Any maximum numerical limitation recited herein is intended to include all lower numerical limitations subsumed therein and any minimum numerical limitation recited in this specification is intended to include all higher numerical limitations subsumed therein. Accordingly, it is contemplated that applicants' right to claim through amendment of the application any numerical ranges actually recited in this specification, even though the explicit mention of such numerical ranges can not be likewise present in the application.

[0136] It will be understood that the description of features or aspects within each embodiment should generally be considered to extend to other similar features or aspects in other embodiments, unless described to the contrary. Thus, it will be apparent to one of ordinary skill in the art that features, attributes, and / or elements described in conjunction with a particular embodiment can be used alone or in combination with features, attributes, and / or elements described in conjunction with another embodiment, unless specifically indicated otherwise. It will be understood that the foregoing is a description of various example embodiments and that the above-described embodiments are not to be construed as limiting, and that various modifications to the disclosed embodiments, and other example embodiments, are intended to be included within the spirit and scope of the disclosure as defined by the appended claims and their equivalents.

Claims

1. A deposition mask for depositing a pattern on a display panel, the deposition mask comprising: an in-cell area and an out-of-cell area around the in-cell area, wherein the deposition mask has an opening in the in-cell area; a first composite layer in the in-cell area and the out-of-cell area; and a support layer on a lower surface of the first composite layer in the out-of-cell area, wherein the first composite layer comprises one or more tensile layers comprising a tensile material having a stress greater than 0 and comprises one or more compressive layers comprising a compressive material having a stress less than 0, wherein each of the one or more tensile layers and the one or more compressive layers has a characteristic value measured by multiplying a stress of each layer by a corresponding thickness of each layer, and wherein a ratio between a sum of the characteristic values of the one or more tensile layers of the first composite layer and a sum of the characteristic values of the one or more compressive layers of the first composite layer is in a range of 0.5 to 1.

2. The deposition mask of claim 1, wherein, the tensile material comprises at least one selected from silicon nitride, molybdenum, and aluminum, and wherein the compressive material comprises at least one selected from silicon oxide and tungsten.

3. The deposition mask of claim 1, wherein, the sum of the characteristic values of the one or more tensile layers is equal to the sum of the characteristic values of the one or more compressive layers.

4. The deposition mask of claim 1, wherein, the first composite layer comprises a first layer and a second layer between the first layer and the support layer, wherein the one or more tensile layers comprise one of the first layer and the second layer and the one or more compressive layers comprise the other of the first layer and the second layer, and wherein a ratio between a characteristic value of the first layer and a characteristic value of the second layer is in a range of 0.5 to 1, and wherein the characteristic value of the first layer is measured by multiplying a stress of the first layer by a thickness of the first layer and the characteristic value of the second layer is measured by multiplying a stress of the second layer by a thickness of the second layer.

5. The deposition mask of claim 4, wherein, the one of the first layer and the second layer comprises silicon nitride and the other of the first layer and the second layer comprises silicon oxide, and wherein a thickness of the one of the first layer and the second layer is 4.5 times to 18 times a thickness of the other of the first layer and the second layer.

6. The deposition mask of claim 5, wherein, the thickness of the one of the first layer and the second layer is in a range of 1 pm to 1.4 pm, and wherein the thickness of the other of the first layer and the second layer is in a range of 0.05 pm to 0.31 pm.

7. The deposition mask of claim 5, wherein, the thickness of the one of the first layer and the second layer is in a range of 1 pm to 1.4 pm, and wherein the thickness of the other of the first layer and the second layer is in a range of 0.11 pm to 0.15 pm.

8. The deposition mask of claim 1, wherein, the first composite layer comprises a first layer, a second layer between the first layer and the support layer, and a third layer on the first layer, wherein the one or more tensile layers comprise one of the first layer, the second layer, and the third layer and the one or more compressive layers comprise the other of the first layer, the second layer, and the third layer, and wherein a ratio between a characteristic value of the one of the first layer, the second layer, and the third layer and a characteristic value of the other of the first layer, the second layer, and the third layer is in a range of 0.5 to 1, and wherein the characteristic value of the one of the first layer, the second layer, and the third layer is measured by multiplying a stress of the one of the first layer, the second layer, and the third layer by a thickness of the one of the first layer, the second layer, and the third layer and the characteristic value of the other of the first layer, the second layer, and the third layer is measured by multiplying a stress of the other of the first layer, the second layer, and the third layer by a thickness of the other of the first layer, the second layer, and the third layer. wherein the one or more tensile layers include the second and third layers and the one or more compressive layers include the first layer, and wherein a ratio between a sum of characteristic values of the second and third layers and a characteristic value of the first layer is in a range of 0.5 to 1, and wherein the characteristic value of the first layer is measured by multiplying a stress of the first layer by a thickness of the first layer, the characteristic value of the second layer is measured by multiplying a stress of the second layer by a thickness of the second layer, and the characteristic value of the third layer is measured by multiplying a stress of the third layer by a thickness of the third layer.

9. The deposition mask of claim 8, wherein, the second and third layers include silicon nitride and the first layer includes silicon oxide, and wherein a total thickness of the second and third layers is 4.5 times to 18 times the thickness of the first layer.

10. The deposition mask of claim 9, wherein, a thickness of each of the second and third layers is in a range of 0.5 pm to 0.7 pm, and wherein the thickness of the first layer is in a range of 0.11 pm to 0.15 pm.

11. The deposition mask of claim 1, further comprising a second composite layer on a lower surface of the support layer, wherein the first and second composite layers have a structure that is symmetrical with respect to the support layer.

12. The deposition mask of claim 11, wherein, the first composite layer includes a first layer and a second layer between the first layer and the support layer, wherein the second composite layer includes a fourth layer and a third layer between the fourth layer and the support layer, wherein the one or more tensile layers include one of the first and second layers and one of the third and fourth layers, the one or more compressive layers include the other of the first and second layers and the other of the third and fourth layers, wherein a sum of characteristic values of the first and second layers is equal to a sum of characteristic values of the third and fourth layers, and wherein the characteristic value of the first layer is measured by multiplying a stress of the first layer by a thickness of the first layer, the characteristic value of the second layer is measured by multiplying a stress of the second layer by a thickness of the second layer, the characteristic value of the third layer is measured by multiplying a stress of the third layer by a thickness of the third layer, and the characteristic value of the fourth layer is measured by multiplying a stress of the fourth layer by a thickness of the fourth layer.

13. The deposition mask of claim 12, wherein, the first and fourth layers include a same material and the second and third layers include a same material.

14. The deposition mask of claim 13, wherein, the thickness of the first layer is equal to the thickness of the fourth layer and the thickness of the second layer is equal to the thickness of the third layer.

15. A deposition mask for depositing a pattern on a display panel, the deposition mask comprising: an in-cell area and an out-of-cell area around the in-cell area; a support layer in the out-of-cell area; a first composite layer on the support layer and including a plurality of layers, wherein one of the plurality of layers is in the in-cell area; and a second composite layer on the support layer and including a plurality of layers, wherein one of the plurality of layers is in the in-cell area. a second composite layer below the support layer and comprising a plurality of layers, wherein, in the cell inner region, the first composite layer has openings corresponding to pixels of the display panel, and wherein the first and second composite layers have a structure symmetrical with respect to the support layer.

16. The deposition mask of claim 15, wherein, some of the plurality of layers of each of the first and second composite layers comprise a tensile material having a stress greater than 0, and wherein other of the plurality of layers of each of the first and second composite layers comprise a compressive material having a stress less than 0.

17. The deposition mask of claim 16, wherein, the tensile material comprises at least one selected from silicon nitride, molybdenum, and aluminum, and wherein the compressive material comprises at least one selected from silicon oxide and tungsten.

18. The deposition mask of claim 15, wherein, the first composite layer comprises a first layer and a second layer between the first layer and the support layer, wherein the second composite layer comprises a fourth layer and a third layer between the fourth layer and the support layer, wherein a sum of a characteristic value of the first layer and a characteristic value of the second layer is equal to a sum of a characteristic value of the third layer and a characteristic value of the fourth layer, and wherein the characteristic value of the first layer is measured by multiplying a stress of the first layer by a thickness of the first layer, the characteristic value of the second layer is measured by multiplying a stress of the second layer by a thickness of the second layer, the characteristic value of the third layer is measured by multiplying a stress of the third layer by a thickness of the third layer, and the characteristic value of the fourth layer is measured by multiplying a stress of the fourth layer by a thickness of the fourth layer.

19. The deposition mask of claim 18, wherein, the first and fourth layers comprise the same material, and the second and third layers comprise the same material.

20. The deposition mask of claim 19, wherein, the thickness of the first layer is equal to the thickness of the fourth layer, and the thickness of the second layer is equal to the thickness of the third layer.

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