Super-hydrophobic self-cleaning optical panel and method for manufacturing the same

Abstract

The application discloses a kind of super-hydrophobic self-cleaning optical panel and preparation method thereof, it is related to optical element field.Preparation method of a kind of super-hydrophobic self-cleaning optical panel, comprising the following steps: S1, glass substrate is washed, to ensure that surface is clean;S2, the glass substrate after washing is placed into PECVD reaction cavity, and is extracted to vacuum;S3, on glass substrate, deposit even arrangement and have nano sharp peak structure of conical shape;S4, using oxygen plasma to activate the glass substrate that has deposited nano sharp peak structure;S5, on the nano sharp peak structure of activated glass substrate, plating AF anti-fingerprint layer;The height range of nano sharp peak structure is 200-300nm, the pitch range of adjacent nano sharp peak structure is 30-50nm, and the aspect ratio of nano sharp peak structure is 1.2-1.5.The preparation process of the application is simple and can prepare super-hydrophobic self-cleaning optical panel with good stability.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of optical elements, in particular to a super-hydrophobic self-cleaning optical panel and a preparation method thereof. BACKGROUND

[0002] Optical panels are easily contaminated by water droplets, oil stains and fingerprints in daily use, which seriously affects their light transmission performance and aesthetics. In order to improve this problem, super-hydrophobic self-cleaning technology has received extensive attention.

[0003] At present, the common method to improve the hydrophobic performance of optical panels is to construct micro-nano structures on the substrate through nano-imprinting or photolithography technology. However, nano-imprinting and photolithography technology have many limitations in practical application.

[0004] Nano-imprinting technology requires the pre-preparation of high-precision templates, which not only has high cost, but also has a long preparation period of the template, which is difficult to meet the demand of large-scale rapid production. At the same time, the template is easy to wear during use, which leads to the decline of the quality of the micro-nano structure imprinted, and further affects the hydrophobic performance of the optical panel. Although photolithography technology can realize the preparation of high-precision micro-nano structures, it is expensive and complicated to operate, and has very high requirements for the environment, which needs to be carried out in a super-clean room, which undoubtedly increases the production cost. Moreover, photolithography technology usually uses photosensitive materials, which may introduce impurities in the process of exposure and development, and has an adverse effect on the performance of the optical panel.

[0005] In addition, the super-hydrophobic surface of the optical panel prepared by the existing method has poor stability, and the micro-nano structure is easy to be worn or damaged during long-term use, which leads to the gradual decrease of the hydrophobic performance. Therefore, it is of great practical significance to develop a method which has a simple preparation process and can prepare a super-hydrophobic self-cleaning optical panel with good stability. SUMMARY

[0006] The present application provides a super-hydrophobic self-cleaning optical panel and a preparation method thereof, which has the advantages of simple preparation process and can prepare a super-hydrophobic self-cleaning optical panel with good stability.

[0007] In the first aspect, the present application provides a preparation method of a super-hydrophobic self-cleaning optical panel, which adopts the following technical scheme:

[0008] A preparation method of a super-hydrophobic self-cleaning optical panel, comprising the following steps:

[0009] S1, cleaning the glass substrate to ensure the surface is clean;

[0010] S2, placing the cleaned glass substrate into a PECVD reaction chamber, and pumping to vacuum to remove impurity gas;

[0011] S3, depositing nano-tip structures with uniform arrangement and conical shape on the glass substrate, the nano-tip structures being silicon oxide and silicon nitride materials;

[0012] S4, activating the glass substrate with the nano-tip structures by oxygen plasma;

[0013] S5, plating an AF anti-fingerprint layer on the nano-tip structures of the activated glass substrate to obtain the super-hydrophobic self-cleaning optical panel;

[0014] The height of the nano-tip structures ranges from 200 to 300 nm, the distance between adjacent nano-tip structures ranges from 30 to 50 nm, and the aspect ratio of the nano-tip structures is 1.2-1.5.

[0015] In the present application, the core of the super-hydrophobic self-cleaning optical panel lies in two aspects: one is to deposit nano-tip structures with specific specifications on the glass substrate, and the other is to activate and anti-fingerprint the glass substrate with the nano-tip structures.

[0016] The rough surface created by the nano-tip structures can effectively trap air, improve the hydrophobicity of the optical panel, and achieve the "lotus effect". However, the size and spacing parameters of the nano-tip structures are very critical. In the present application, the height of the nano-tip structures should not exceed 300 nm, and the aspect ratio should not be too large. If the height or aspect ratio is too large, the nano-tip structures are prone to breakage and collapse under external force, resulting in weakened hydrophobicity. If the distance between adjacent two peaks of the nano-tip structures is too small, the capillary force between the water droplets and the surface will be enhanced, resulting in an increase in the water droplet rolling angle and a decrease in the self-cleaning effect of the optical panel.

[0017] In view of the problem of poor hydrophobic durability of the nano-tip structures alone (for example, after the nano-tip structures are damaged by multiple wiping, the lotus hydrophobic effect of the optical panel will disappear), the present application adds the activation and anti-fingerprint treatment steps of the nano-tip structures. The activation step improves the adhesion of the AF anti-fingerprint layer to the nano-tip structures. The low surface energy and wrapping protection of the AF anti-fingerprint layer are beneficial to further improving the hydrophobicity of the optical panel, achieving stable and durable super-hydrophobic effect (water contact angle > 150°), and providing excellent anti-fingerprint pollution effect, which can improve the cleaning difficulty of the existing optical panel.

[0018] In some specific embodiments, when the nano-tip structures are silicon nitride materials, the S3 step is specifically as follows:

[0019] SiH4, NH3 and a fluorine-containing etching gas are introduced into the PECVD reaction chamber, and a nano-tip structure with uniform arrangement and conical shape is deposited on the glass substrate after high-frequency ionization; the specific parameters are as follows: the glass substrate temperature is 230-250℃, the radio frequency power is 300-400W, the radio frequency frequency is 13.56 MHz, the pressure in the PECVD reaction chamber is 80-100Pa, the flow rate of the fluorine-containing etching gas is 15-25sccm, and the flow rate ratio of SiH4, NH3 and the fluorine-containing etching gas is (1-1.5):(2-3):1.

[0020] In the present application, the reaction gas (SiH4, NH3) and the fluorine-containing etching gas are introduced simultaneously when the silicon nitride nano-tip structure is deposited, so that the silicon nitride deposition and the plasma etching are performed synchronously, and the silicon nitride nano-tip structure with uniform arrangement and uniform size is formed on the entire glass substrate. No mask plate is needed to assist the molding, and no subsequent photolithography and etching steps are needed, so that the process flow is simplified. The key of the step lies in the synergistic cooperation between the parameters, such as the radio frequency power, the radio frequency frequency, the pressure in the PECVD reaction chamber, and the flow rate control of SiH4, NH3 and the fluorine-containing etching gas, so as to balance the deposition rate and the etching rate of the silicon nitride, and form the silicon nitride nano-tip structure with uniform arrangement and conical shape and a specific size range.

[0021] In some specific embodiments, the fluorine-containing etching gas uses any one of CF4, NF3 and SF6.

[0022] In some specific embodiments, when the nano-tip structure is a silicon oxide material, the S3 step is specifically as follows:

[0023] SiH4, N2O and an inert gas are introduced into the PECVD reaction chamber, and a nano-tip structure with uniform arrangement and conical shape is deposited on the glass substrate after high-frequency ionization; the specific parameters are as follows: the glass substrate temperature is 230-250℃, the radio frequency power is 300-400W, the radio frequency frequency is 13.56 MHz, the pressure in the PECVD reaction chamber is 3-8Pa, the flow rate of N2O is 5-10sccm, and the flow rate ratio of SiH4, N2O and the inert gas is (8-10):1:100.

[0024] In the present application, the reaction gas (SiH4, N2O) and the inert gas are introduced simultaneously when the silicon oxide nano-tip structure is deposited, the inert gas is used to dilute the reaction gas, maintain the stability of the plasma and adjust the ion bombardment effect in the deposition process, and the formation of the silicon oxide nano-tip structure is promoted by adjusting the flow rate ratio of SiH4 and N2O and the control of the pressure in the PECVD reaction chamber. The process also does not need to increase the mask plate to assist the molding or increase the photolithography and etching steps, and can be completed in one step.

[0025] In some specific embodiments, in the S4 step, the PECVD reaction chamber is vacuumed, and then oxygen is introduced into the PECVD reaction chamber. The glass substrate with the nano-spiked structure is subjected to an oxygen plasma activation treatment for 30-40 s under the conditions of a radio frequency power of 50-100 W, a radio frequency of 13.56 MHz, a PECVD reaction chamber pressure of 20-50 Pa, and an oxygen flow rate of 4-8 sccm, to obtain an activated glass substrate.

[0026] In the present application, when the glass substrate with the nano-spiked structure is activated, the radio frequency power should not be higher than that used for depositing the nano-spiked structure of silicon nitride or silicon oxide. At the same time, the activation time is also very critical. If the activation time is too short, the hydrophobic durability of the optical panel cannot be significantly improved. If the activation time is too long, the nano-spiked structure is easily damaged, which also affects the hydrophobic effect and stability of the optical panel. Therefore, when the glass substrate with the nano-spiked structure is activated, the activation parameters need to be strictly controlled.

[0027] In some specific embodiments, in the S5 step, the AF anti-fingerprint layer is deposited on the nano-spiked structure of the activated glass substrate by an AF coating pill under the condition of a vacuum degree of less than 10 Pa. -3 In some specific embodiments, in the S5 step, the AF anti-fingerprint layer is deposited on the nano-spiked structure of the activated glass substrate by an AF coating pill under the condition of a vacuum degree of less than 10 Pa.

[0028] In the present application, the AF anti-fingerprint layer is deposited on the nano-spiked structure by evaporation, which is beneficial to the maintenance of the nano-spiked structure, and can prevent the residue of fingerprints and further improve the hydrophobicity and stability of the optical panel.

[0029] In some specific embodiments, the deposition rate of the AF coating pill is 0.1-0.5 nm / s.

[0030] In the present application, the deposition rate of the AF coating pill is controlled to be 0.1-0.5 nm / s, which is beneficial to improving the deposition uniformity and density of the AF anti-fingerprint layer on the nano-spiked structure, and improving the adhesion of the AF anti-fingerprint layer to the nano-spiked structure.

[0031] In some specific embodiments, the thickness of the AF anti-fingerprint layer is 5-10 nm.

[0032] In a second aspect, the present application provides an ultrahydrophobic self-cleaning optical panel, which adopts the following technical scheme:

[0033] An ultrahydrophobic self-cleaning optical panel is prepared by the preparation method of the ultrahydrophobic self-cleaning optical panel according to any one of the above.

[0034] The ultrahydrophobic self-cleaning optical panel of the present application has stable and durable hydrophobic properties, self-cleaning function, and anti-fingerprint performance.

[0035] In summary, the present application at least includes the following beneficial technical effects:

[0036] (1) In the present application, the rough surface created by the nano spike structure can effectively trap air, improve the hydrophobicity of the optical panel, and achieve the "lotus effect". However, the size and spacing parameters of the nano spike structure are very critical. In the present application, the height of the nano spike structure should not exceed 300 nm, and the aspect ratio should not be too large. If the height or aspect ratio is too large, the nano spike structure is prone to breakage and collapse under external force, resulting in weakened hydrophobicity. If the spacing between the two adjacent peaks of the nano spike structure is too small, the capillary force between the water droplets and the surface will be enhanced, resulting in an increase in the water droplet rolling angle and a decrease in the self-cleaning effect of the optical panel. In view of the problem of poor hydrophobicity durability of the nano spike structure alone (for example, after multiple wiping damages the nano spike structure, the lotus hydrophobic effect of the optical panel will disappear), the present application adds an activation and anti-fingerprint treatment step for the nano spike structure. The activation step improves the adhesion of the AF anti-fingerprint layer to the nano spike structure. The low surface energy and wrapping protection of the AF anti-fingerprint layer are beneficial to further improving the hydrophobicity of the optical panel, achieving stable and persistent super-hydrophobic effect (water contact angle > 150°), and providing excellent anti-fingerprint pollution effect, which can improve the cleaning difficulty of the existing optical panel.

[0037] (2) In the present application, when depositing the silicon nitride nano spike structure, the reaction gas (SiH4, NH3) and the fluorine-containing etching gas are simultaneously introduced, so that the deposition of silicon nitride and the plasma etching are carried out synchronously, forming a silicon nitride nano spike structure with regular arrangement and uniform size on the entire glass substrate. No additional mask plate is needed for auxiliary molding, and no subsequent photolithography step is needed, simplifying the process flow. The key to this step is the synergistic cooperation between various parameters, such as radio frequency power, radio frequency frequency, PECVD reaction cavity pressure, and control of SiH4, NH3 and fluorine-containing etching gas flow. The deposition rate and etching rate of silicon nitride can be balanced to form a uniform arrangement of silicon nitride nano spike structure with a specific size range and a conical shape.

[0038] (3) In the present application, when depositing the silicon oxide nano spike structure, the reaction gas (SiH4, N2O) and the inert gas are simultaneously introduced. The inert gas is used to dilute the reaction gas, maintain the stability of the plasma, and adjust the ion bombardment effect during the deposition process. By adjusting the flow ratio of SiH4 and N2O and the control of the pressure in the PECVD reaction cavity, the formation of the silicon oxide nano spike structure is promoted. This process also does not need to increase the mask plate for auxiliary molding or add the photolithography step, and can be done in one step. BRIEF DESCRIPTION OF DRAWINGS

[0039] Figure 1Fig. 1 is a structural schematic diagram of an optical panel of the present application.

[0040] 1, glass substrate; 2, nano spike structure; 3, AF anti-fingerprint layer. DETAILED DESCRIPTION

[0041] The present application will be further described in conjunction with specific experiments. Unless otherwise specified, the raw materials used in each embodiment and comparative example of the present application can be obtained through commercial channels. EMBODIMENT

[0042]

EMBODIMENT 1

[0043] A preparation method of a super-hydrophobic self-cleaning optical panel, comprising the following steps:

[0044] S1, cleaning the glass substrate to ensure the surface is clean;

[0045] S2, placing the cleaned glass substrate into a PECVD reaction chamber, and pumping to vacuum to remove impurity gas;

[0046] S3, depositing a nano spike structure with uniform arrangement and conical shape on the glass substrate, the nano spike structure is composed of silicon nitride, and the specific deposition steps are as follows:

[0047] SiH4, NH3 and CF4 are introduced into the PECVD reaction chamber, and after high-frequency ionization, a nano spike structure with uniform arrangement and conical shape is deposited on the glass substrate; the specific parameters are as follows: the glass substrate temperature is 230°C, the radio frequency power is 300W, the radio frequency frequency is 13.56 MHz, the pressure of the PECVD reaction chamber is 80Pa, the flow rate of CF4 is 15sccm, the flow rate ratio of SiH4, NH3 and CF4 is 1:2:1, the deposition height of the silicon nitride nano spike structure is 200-210nm, the spacing between adjacent silicon nitride nano spike structures is 30-35nm, and the aspect ratio of the nano spike structure is 1.2-1.35;

[0048] S4, introducing oxygen into the PECVD reaction chamber, and performing oxygen plasma activation treatment on the glass substrate with the nano spike structure deposited thereon for a time of 40s under the conditions of a radio frequency power of 50W, a radio frequency frequency of 13.56 MHz, a PECVD reaction chamber pressure of 20Pa, and an oxygen flow rate of 4sccm, to obtain an activated glass substrate;

[0049] S5, evaporating an AF coating pill (Dongguan Meicheng New Material Co., Ltd.) to the surface of the nano spike structure of the activated glass substrate under an environment with a vacuum degree less than 10 -3 Pa, controlling the deposition rate of the AF coating pill to be 0.1nm / s, and the thickness of the AF anti-fingerprint layer to be 5nm.

[0050] Example 2

[0051] A method for preparing a super-hydrophobic self-cleaning optical panel, comprising the following steps:

[0052] S1, cleaning the glass substrate to ensure the surface is clean;

[0053] S2, placing the cleaned glass substrate into a PECVD reaction chamber, and evacuating to vacuum to remove impurity gas;

[0054] S3, depositing a nano-spiked structure with uniform arrangement and conical shape on the glass substrate, the nano-spiked structure is composed of silicon nitride, and the specific deposition steps are as follows:

[0055] SiH4, NH3 and NF3 are introduced into the PECVD reaction chamber, and after high-frequency ionization, a nano-spiked structure with uniform arrangement and conical shape is deposited on the glass substrate; the specific parameters are as follows: the glass substrate temperature is 250℃, the radio frequency power is 400W, the radio frequency frequency is 13.56 MHz, the pressure of the PECVD reaction chamber is 100Pa, the flow rate of NF3 is 25sccm, the flow rate ratio of SiH4, NH3 and NF3 is 1.5:3:1, the deposition height of the silicon nitride nano-spiked structure is 260-270nm, the spacing between adjacent silicon nitride nano-spiked structures is 33-38nm, and the aspect ratio of the nano-spiked structure is 1.3-1.5;

[0056] S4, introducing oxygen into the PECVD reaction chamber, and performing oxygen plasma activation treatment on the glass substrate with the nano-spiked structure under the conditions of radio frequency power of 100W, radio frequency frequency of 13.56 MHz, PECVD reaction chamber pressure of 50Pa, and oxygen flow rate of 8sccm for a time of 30s, to obtain an activated glass substrate;

[0057] S5, evaporating AF coating pills (Dongguan Meicheng New Material Co., Ltd.) to the nano-spiked structure surface of the activated glass substrate under an environment with a vacuum degree less than 10 -3 Pa, and controlling the deposition rate of the AF coating pills to be 0.5nm / s, and the thickness of the AF anti-fingerprint layer to be 10nm.

[0058] Example 3

[0059] A method for preparing a super-hydrophobic self-cleaning optical panel, which is different from Example 1 in that the S3 step is different. In this embodiment:

[0060] S3, depositing a nano-spiked structure with uniform arrangement and conical shape on the glass substrate, the nano-spiked structure is composed of silicon oxide, and the specific deposition steps are as follows:

[0061] SiH4, N2O and Ar are introduced into the PECVD reaction chamber, and after high-frequency ionization, a nano spike structure with uniform arrangement and conical shape is deposited on the glass substrate. The specific parameters are as follows: the glass substrate temperature is 230 DEG C, the radio frequency power is 300 W, the radio frequency frequency is 13.56 MHz, the pressure of the PECVD reaction chamber is 8 Pa, the flow rate of N2O is 5 sccm, the flow rate ratio of SiH4, N2O and Ar is 8:1:100, the deposition height of the silicon oxide nano spike structure is 240-250 nm, the spacing range of adjacent silicon oxide nano spike structures is 32-35 nm, and the aspect ratio of the nano spike structure is 1.3-1.4.

[0062] Example 4

[0063] A preparation method of a super-hydrophobic self-cleaning optical panel, which is different from that of Example 1 in that the S3 step is different. In this embodiment:

[0064] S3, a nano spike structure with uniform arrangement and conical shape is deposited on the glass substrate, and the nano spike structure is composed of silicon oxide. The specific deposition steps are as follows:

[0065] SiH4, N2O and He are introduced into the PECVD reaction chamber, and after high-frequency ionization, a nano spike structure with uniform arrangement and conical shape is deposited on the glass substrate. The specific parameters are as follows: the glass substrate temperature is 250 DEG C, the radio frequency power is 400 W, the radio frequency frequency is 13.56 MHz, the pressure of the PECVD reaction chamber is 3 Pa, the flow rate of N2O is 10 sccm, the flow rate ratio of SiH4, N2O and He is 10:1:100, the deposition height of the silicon oxide nano spike structure is 270-280 nm, the spacing range of adjacent silicon oxide nano spike structures is 36-40 nm, and the aspect ratio of the nano spike structure is 1.3-1.4.

[0066] Comparative Example

[0067] Comparative Example 1

[0068] A preparation method of a super-hydrophobic self-cleaning optical panel, which is different from that of Example 1 in that in the S3 step, the deposition height of the silicon nitride nano spike structure is 440-450 nm, the spacing range of adjacent silicon nitride nano spike structures is 20-25 nm, and the aspect ratio of the nano spike structure is 1.6-1.8.

[0069] Comparative Example 2

[0070] A preparation method of a super-hydrophobic self-cleaning optical panel, which is different from that of

Example 3

[0071]

Comparative Example 3

[0072] A preparation method of a super-hydrophobic self-cleaning optical panel, which is different from that of

Example 1

[0073]

Comparative Example 4

[0074] A preparation method of a super-hydrophobic self-cleaning optical panel, which is different from that of

Example 3

[0075] In the S3 step, SiH4, N2O and Ar are introduced into the PECVD reaction chamber, and after high-frequency ionization, nano-spiked structures with uniform arrangement and conical shape are deposited on the glass substrate; the specific parameters are as follows: the glass substrate temperature is 230℃, the radio frequency power is 300W, the radio frequency frequency is 13.56 MHz, the pressure of the PECVD reaction chamber is 50Pa, the flow rate of N2O is 5sccm, the flow rate ratio of SiH4, N2O and Ar is 8:1:50, the deposition height of the silicon oxide nano-spiked structure is 240-250nm, the spacing range of adjacent silicon oxide nano-spiked structures is 10-15nm, and the aspect ratio of the nano-spiked structure is 0.5-0.7.

[0076]

Comparative Example 5

[0077] A preparation method of a super-hydrophobic self-cleaning optical panel, which is different from that of

Example 1

[0078]

Comparative Example 6

[0079] A preparation method of a super-hydrophobic self-cleaning optical panel, which differs from the method of Example 1 in that the steps S4 and S5 are omitted.

[0080] Performance detection test

[0081] (1) Water contact angle: The contact angle of water with the test surface of the optical panel in the examples and the comparative examples before and after wiping was tested by the sessile drop method. The test surface of Examples 1-4 and Comparative Examples 1-5 was the AF anti-fingerprint layer, and the test surface of Comparative Example 6 was the nano spike structure surface. Wiping was performed using non-woven fabric, and the wiping frequency was 1000 times.

[0082] (2) Rolling angle: The rolling angle of a water droplet on the test surface of the optical panel in each example and the comparative example before and after wiping was tested according to the inclined platform method. The test surface of Examples 1-4 and Comparative Examples 1-5 was the AF anti-fingerprint layer, and the test surface of Comparative Example 6 was the nano spike structure surface. Wiping was performed using non-woven fabric, and the wiping frequency was 1000 times. A rolling angle < 10° represents good self-cleaning effect of the optical panel, and a rolling angle > 10° represents poor self-cleaning effect of the optical panel.

[0083] (3) Anti-fingerprint grade: The test surface of the optical panel in each example and the comparative example before and after wiping was pressed gently with the index finger for 5 s, and the fingerprint residue was observed after the finger was removed for 3 s: Grade 4 - no trace; Grade 3 - slight trace, which can be easily wiped off with the finger; Grade 2 - slight trace, which cannot be wiped off with the finger; Grade 1 - obvious trace, which cannot be wiped off with the finger. The test surface of Examples 1-4 and Comparative Examples 1-5 was the AF anti-fingerprint layer, and the test surface of Comparative Example 6 was the nano spike structure surface. Wiping was performed using non-woven fabric, and the wiping frequency was 1000 times.

[0084] Table 1

[0085]

[0086] According to the detection data in Examples 1-4 and Table 1 of the present application, the water contact angle of the optical panel prepared in Examples 1-4 before and after wiping is greater than 150°, the rolling angle is less than 10°, which has the super-hydrophobic and low adhesion effect of a lotus leaf. In addition, the anti-fingerprint grade is Grade 4, i.e., the optical panel in Examples 1-4 has the properties of persistent and stable super-hydrophobicity, self-cleaning performance, and anti-fingerprint pollution performance.

[0087] From the detection data in Table 1, it can be seen that, when the size and spacing of the nano spike structure are not within the range of the present application, the water contact angle of the optical panel after wiping is less than 150°, the roll-off angle is greater than 10°, and the anti-fingerprint grade is reduced to 3, even though the same deposition process is used. Thus, the size and spacing of the nano spike structure affect the superhydrophobicity, self-cleaning property, and anti-fingerprint pollution property of the optical panel.

[0088] From the detection data in Table 1, it can be seen that, when the size and spacing of the nano spike structure are not within the range of the present application, the water contact angle of the optical panel after wiping is less than 150°, the roll-off angle is greater than 10°, and the anti-fingerprint grade is reduced to 3, even though the same deposition process is used. Thus, the size and spacing of the nano spike structure affect the superhydrophobicity, self-cleaning property, and anti-fingerprint pollution property of the optical panel.

[0089] The specific embodiments are merely illustrative of the present application, and are not intended to limit the present application. Those skilled in the art can make modifications to the specific embodiments without creative contribution, according to the present application, and the modifications are within the scope of the present application.

Claims

1. A method for preparing a superhydrophobic self-cleaning optical panel, characterized in that, The method comprises the following steps: S1, cleaning the glass substrate to ensure the surface is clean; S2, placing the cleaned glass substrate into a PECVD reaction chamber, and evacuating to vacuum to remove impurity gas; S3, depositing a nano-spiked structure with uniform arrangement and conical shape on the glass substrate, the nano-spiked structure being made of silicon oxide or silicon nitride material; S4, activating the glass substrate with the deposited nano-spiked structure by oxygen plasma; S5, plating an AF anti-fingerprint layer on the nano-spiked structure of the activated glass substrate to obtain a super-hydrophobic self-cleaning optical panel; The height of the nano-spiked structure ranges from 200 to 300 nm, the distance between adjacent nano-spiked structures ranges from 30 to 50 nm, and the aspect ratio of the nano-spiked structure ranges from 1.2 to 1.

5. When the nano-spiked structure is made of silicon nitride material, the step S3 is performed as follows: introducing SiH4, NH3 and a fluorine-containing etching gas into the PECVD reaction chamber, and depositing a nano-spiked structure with uniform arrangement and conical shape on the glass substrate after high-frequency ionization; the specific parameters are as follows: the temperature of the glass substrate is 230-250℃, the radio frequency power is 300-400W, the radio frequency is 13.56 MHz, the pressure of the PECVD reaction chamber is 80-100Pa, the flow rate of the fluorine-containing etching gas is 15-25sccm, and the flow rate ratio of SiH4, NH3 and the fluorine-containing etching gas is (1-1.5):(2-3):

1. When the nano-spiked structure is made of silicon oxide material, the step S3 is performed as follows: introducing SiH4, N2O and an inert gas into the PECVD reaction chamber, and depositing a nano-spiked structure with uniform arrangement and conical shape on the glass substrate after high-frequency ionization; the specific parameters are as follows: the temperature of the glass substrate is 230-250℃, the radio frequency power is 300-400W, the radio frequency is 13.56 MHz, the pressure of the PECVD reaction chamber is 3-8Pa, the flow rate of N2O is 5-10sccm, and the flow rate ratio of SiH4, N2O and the inert gas is (8-10):1:

100. 2.The method of claim 1, wherein: The fluorine-containing etching gas is any one of CF4, NF3 and SF6.

3. The method of claim 1, wherein the method further comprises: In the step S4, the PECVD reaction chamber is evacuated, and then oxygen is introduced into the PECVD reaction chamber; the glass substrate with the deposited nano-spiked structure is activated by oxygen plasma under the conditions of radio frequency power of 50-100W, radio frequency of 13.56 MHz, pressure of the PECVD reaction chamber of 20-50Pa, and oxygen flow rate of 4-8sccm for a time period of 30-40s to obtain the activated glass substrate.

4. The method of claim 1, wherein the method further comprises: In S5, the AF anti-fingerprint layer is deposited by AF coating pills in a vacuum degree less than 10 -3 Pa.

5. The method of claim 4, wherein the method further comprises: The deposition rate of the AF plating film pill is 0.1-0.5nm / s.

6. The method of claim 4, wherein the method further comprises: The thickness of the AF anti-fingerprint layer is 5-10nm.

7. A superhydrophobic self-cleaning optical faceplate, characterized by: The super-hydrophobic self-cleaning optical panel is prepared by the method of any one of claims 1-6.

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