An infrared detection method and device based on phonon injection, equipment and medium

Abstract

The application relates to the technical field of semiconductor photoelectric detection, and discloses an infrared detection method and device based on phonon injection, equipment and a medium, wherein the method comprises the following steps: providing a layering structure, wherein the layering structure comprises a piezoelectric layer, an infrared absorption layer and a two-dimensional confinement layer which are sequentially arranged in layers, and the two-dimensional confinement layer is provided with a source electrode and a drain electrode for forming a conductive channel; using the infrared absorption layer to absorb incident infrared photons to generate phonons; applying an electric field to the piezoelectric layer, so that the piezoelectric layer produces strain and transmits the strain to the infrared absorption layer, to regulate the phonon density injected from the infrared absorption layer to the two-dimensional confinement layer; and detecting the current change between the source electrode and the drain electrode to detect infrared light. The method has the beneficial effect of getting rid of the dependence on refrigeration equipment.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor photoelectric detection, and in particular to an infrared detection method and device based on phonon injection, equipment and a medium. BACKGROUND

[0002] Infrared detection technology is widely used in meteorology, remote sensing, astronomy and medical fields. At present, the development of high-performance infrared detectors faces the core challenge: the mainstream of photodetectors based on photoelectric effect needs to use narrow bandgap materials to respond to mid-long wave infrared light, but this leads to a sharp increase in thermal excitation dark current at room temperature, and the signal-to-noise ratio is seriously deteriorated. In order to suppress noise, such detectors must rely on liquid nitrogen cooling, resulting in a complex system and high cost, which seriously restricts the development of portable, low-cost and large-scale integrated applications. Therefore, it is an urgent need to develop a non-cooling, high-sensitivity room temperature infrared detection technology. SUMMARY

[0003] The present application provides an infrared detection method and device based on phonon injection, equipment and a medium, which solves the technical problem of how to realize high-sensitivity room temperature infrared detection and gets rid of the dependence on refrigeration equipment.

[0004] In order to achieve the above purpose, the main technical scheme adopted by the present application includes:

[0005] In a first aspect, the present application provides an infrared detection method based on phonon injection, which comprises: providing a layer structure, wherein the layer structure comprises a piezoelectric layer, an infrared absorption layer and a two-dimensional confinement layer which are sequentially stacked, and the two-dimensional confinement layer is provided with a source electrode and a drain electrode for forming a conductive channel; using the infrared absorption layer to absorb incident infrared photons to generate phonons; applying an electric field to the piezoelectric layer, so that the piezoelectric layer produces strain and transmits to the infrared absorption layer, to regulate the phonon density injected from the infrared absorption layer to the two-dimensional confinement layer; detecting the current change between the source electrode and the drain electrode to detect infrared light.

[0006] The infrared detection method based on phonon injection provided by the present application utilizes the layer structure of piezoelectric layer-infrared absorption layer-two-dimensional confinement layer, converts infrared photons into phonons through the infrared absorption layer, and actively regulates the phonon injection efficiency by means of piezoelectric strain, and realizes infrared detection by detecting the current change in the two-dimensional confinement layer due to phonon injection. Thus, the high dark current problem inherent in the traditional infrared detection relying on narrow bandgap semiconductors is avoided from the physical mechanism, the amplification and optimization of the detection signal are realized through active strain regulation, and high-performance, high-sensitivity room temperature infrared detection is realized.

[0007] Optionally, the two-dimensional confinement layer is one of a nanosheet, a nanobelt or a nanowire.

[0008] The strong quantum confinement effect inherent in low-dimensional nanostructures such as nanosheets, nanoribbons or nanowires limits the number of phonon modes that can be accommodated inside, ensuring that a bottleneck state can be reached with limited phonon injection, thereby triggering a dramatic change in carrier transport characteristics, amplifying weak phonon injection into a significant electrical signal, and achieving high-sensitivity infrared detection.

[0009] Optionally, the band gap of the two-dimensional confinement layer is greater than or equal to 0.3 eV.

[0010] By limiting the band gap of the two-dimensional confinement layer to be not less than 0.3 eV, the intrinsic carrier concentration of the two-dimensional confinement layer at room temperature is physically ensured to be extremely low, thereby suppressing the dark current and its noise to a negligible level. This creates the necessary conditions for detecting the weak electrical signal changes caused by phonon injection, thereby achieving high signal-to-noise ratio and high detection rate at room temperature.

[0011] Optionally, the material of the two-dimensional confinement layer is one of black phosphorus, molybdenum disulfide or tungsten ditelluride.

[0012] Among them, the two-dimensional confinement materials such as black phosphorus, molybdenum disulfide or tungsten ditelluride not only meet the strict requirements of low dark current and low noise at room temperature in terms of band gap characteristics. More importantly, their inherent strong electron-phonon coupling characteristics can efficiently convert the disturbance of phonon injection into significant electrical signal changes, thereby providing a basis for realizing high-sensitivity, low-noise room-temperature infrared detection.

[0013] Optionally, the length of the two-dimensional confinement layer is 80 nm and the thickness is 10 nm.

[0014] The length of the two-dimensional confinement layer is set to 80 nm and the thickness is set to 10 nm, aiming to create a nanoscale conductive channel with extremely strong phonon-electron interaction sensitivity and significant quantum confinement effect. This size combination allows the small change in phonon density to be efficiently converted into a significant change in source-drain current, which is conducive to realizing high-response, low-noise and room-temperature infrared detection.

[0015] Optionally, a periodic alternating electric field is applied to the piezoelectric layer to generate a periodic strain in the piezoelectric layer; the frequency range of the periodic alternating electric field is 1 kHz to 100 MHz.

[0016] The phonon injection process is modulated by applying a periodic alternating electric field, which shifts the detection signal from the low-frequency region with high noise to the high-frequency region with extremely low noise level. Then, the coherent detection technology such as phase-locked amplification is used to selectively extract the effective signal synchronized with the modulation frequency, so as to greatly suppress the flicker noise and various background noises, and to improve the signal-to-noise ratio and the detection sensitivity of the detector by an order of magnitude.

[0017] Optionally, the electric field intensity applied to the piezoelectric layer ranges from 0.1 to 10 .

[0018] By setting a specific electric field regulation range, it is ensured that a sufficient and linearly controllable strain can be generated in the piezoelectric layer through the inverse piezoelectric effect, so as to be effectively transmitted to the infrared absorption layer and modulate the phonon state thereof.

[0019] In a second aspect, an embodiment of the present application provides an infrared detection device based on phonon injection, which comprises: a layered structure, the layered structure comprising a piezoelectric layer, an infrared absorption layer and a two-dimensional confinement layer arranged in sequence; the two-dimensional confinement layer is provided with a source electrode and a drain electrode for forming a conductive channel; the infrared absorption layer is used for absorbing incident infrared photons to generate phonons; a regulation unit is used for applying an electric field to the piezoelectric layer, so that the piezoelectric layer generates strain and transmits to the infrared absorption layer, to regulate the phonon density injected from the infrared absorption layer to the two-dimensional confinement layer; and a detection unit is used for detecting the current change between the source electrode and the drain electrode, to detect infrared light.

[0020] In a third aspect, an embodiment of the present application provides a computer device, which comprises a memory and a processor, the memory and the processor are communicatively connected, the memory stores computer instructions, and the processor executes the computer instructions to perform the above-mentioned infrared detection method based on phonon injection.

[0021] In a fourth aspect, an embodiment of the present application provides a computer readable storage medium, which stores computer instructions, and the computer instructions are used to make a computer execute the above-mentioned infrared detection method based on phonon injection.

[0022] In a fifth aspect, an embodiment of the present application provides a computer program product, which comprises computer instructions, and the computer instructions are used to make a computer execute the above-mentioned infrared detection method based on phonon injection. BRIEF DESCRIPTION OF DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the specific embodiments or the prior art of the present application, the drawings needed to be used in the description of the specific embodiments or the prior art will be briefly introduced. Obviously, the drawings described below are some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor on the basis of these drawings.

[0024] Figure 1 A flow chart of an infrared detection method based on phonon injection is provided for the embodiments of the present application.

[0025] Figure 2 A schematic diagram of a layered structure is provided for the embodiments of the present application.

[0026] Figure 3 A schematic diagram of an observation current is provided for the embodiments of the present application.

[0027] Figure 4 A schematic diagram of the ratio of current change with phonon number density change is provided for the embodiments of the present application.

[0028] Figure 5 A schematic diagram of an infrared detection device based on phonon injection is provided for the embodiments of the present application.

[0029] Figure 6 A schematic diagram of the noise equivalent power of an infrared detection device with band gap change is provided for the embodiments of the present application.

[0030] Figure 7 A structural schematic diagram of a computer device is provided for the embodiments of the present application.

[0031] The drawings show: 1-infrared light; 2-phonon; 10-processor; 20-memory; 30-communication interface; 100-source electrode; 200-drain electrode; 300-two-dimensional confinement layer; 400-infrared absorption layer; 500-piezoelectric layer. EMBODIMENT

[0032] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are some embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0033] Infrared detection technology plays an important role in many fields such as meteorological monitoring, remote sensing imaging, astronomical observation and medical diagnosis. With the deepening of application requirements, the development of infrared detectors with high sensitivity, high response speed, low noise and room temperature operation has become the focus and difficulty of current research. At present, most of the mainstream infrared detectors are based on the working principle of photoelectric effect. Specifically, after the infrared photon is absorbed by the detection material, its energy is sufficient to make the valence band electrons transition to the conduction band to form electron-hole pairs (i.e. photo-generated carriers), which form a measurable photocurrent under the action of an external electric field, thereby realizing the detection of infrared light. However, this detection mechanism relying on inter-band or intra-band photoelectric transition has inherent technical bottlenecks. In order to respond to lower energy mid- and long-wave infrared photons, the detection material must have a relatively narrow band gap (usually less than 0.4 eV). A core problem brought by the narrow band gap is that the thermal excitation carriers (i.e. dark current) of the device will increase sharply at room temperature. These background carriers generated by thermal noise are physically difficult to effectively separate from photo-generated carriers, resulting in a significant reduction in signal-to-noise ratio. In order to suppress thermal noise and obtain usable detection performance, most high-performance narrow-band infrared photodetectors (such as mercury cadmium telluride detectors) must work in a deep low-temperature environment (for example, liquid nitrogen temperature, 77 K). This stringent refrigeration requirement not only increases the complexity, volume, cost and power consumption of the system, but also greatly restricts the further development of infrared detectors in portable, low-cost and large-scale integrated application scenarios.

[0034] Therefore, there is an urgent need in the art for an infrared detection mechanism and device structure that can overcome the above-mentioned defects, in order to achieve high-sensitivity infrared detection while breaking the dependence on deep low-temperature refrigeration environment, and to promote the development of infrared technology towards room temperature, miniaturization and low power consumption.

[0035] Embodiments of the present application provide an infrared detection method based on phonon injection. It should be noted that the steps shown in the flowchart of the accompanying drawings can be executed in a computer system such as a set of computer executable instructions, and although a logical order is shown in the flowchart, in some cases, the steps shown or described herein can be executed in an order different from that shown herein.

[0036] Reference is made to Figure 1 , Figure 1 A flowchart of an infrared detection method based on phonon injection provided by embodiments of the present application is shown in Figure 1 , which includes the following steps:

[0037] Step S1, providing a layer structure, wherein the layer structure includes a piezoelectric layer 500, an infrared absorption layer 400 and a two-dimensional confinement layer 300 arranged in sequence, and the two-dimensional confinement layer 300 is provided with a source electrode 100 and a drain electrode 200 for forming a conductive channel.

[0038] Please refer to Figure 2 , Figure 2 This is a schematic diagram of a stacked structure provided in an embodiment of this application. For example... Figure 2 As shown, the piezoelectric layer 500 is made of piezoelectric material and undergoes strain (mechanical deformation) when an electric field is applied. The strain intensity of the piezoelectric layer 500 can be precisely controlled by adjusting the electric field. The infrared absorption layer 400 absorbs incident infrared light 1 and converts the absorbed infrared photons into thermal vibrations of the crystal lattice, generating a large number of phonons 2. The two-dimensional confinement layer 300 is an extremely thin conductive channel made of two-dimensional material. Two-dimensional material refers to a crystal in which atoms are arranged only in a plane, with very few layers in the vertical direction; electrons and phonons 2 can only move within the two-dimensional plane. The two-dimensional confinement layer 300 is nanometer-sized; the injected phonons 2 significantly alter the transport behavior of electrons within it, thereby converting the injected phonons 2 into easily measurable electrical signals.

[0039] In some specific embodiments, the fabrication method of the source 100 and the drain 200 includes: first, defining electrode patterns at both ends of the two-dimensional confinement layer 300 by photolithography; then, depositing a metal thin film in the patterned area using electron beam thermal evaporation technology; next, removing the photoresist and the metal covering it by a lift-off process to form the final source 100 and drain 200; and finally, attaching the piezoelectric layer 500 to the back side of the infrared absorption layer 400.

[0040] The piezoelectric layer 500, infrared absorption layer 400 and two-dimensional confinement layer 300 are integrated into one by means of a stacked structure. The strain generated by the piezoelectric layer 500 is used to actively control the phonon 2 injection efficiency of the infrared absorption layer 400 into the two-dimensional confinement layer 300. By taking advantage of the extreme sensitivity of the phonon state in the two-dimensional confinement layer 300 to the current, the infrared light 1 signal is converted into changes in electrical signal to achieve infrared detection.

[0041] Step S3: The infrared absorption layer 400 absorbs the incident infrared photons to generate phonons 2.

[0042] The infrared absorption layer 400 converts the energy of infrared photons into phonons 2, rather than photogenerated carriers, thus circumventing the inherent limitation of related methods that rely on narrow bandgap materials. By utilizing the phonon density to modulate the electrical signal in the two-dimensional confinement layer 300, the drawback of excessive dark current in traditional infrared detection due to reliance on narrow bandgap semiconductors is overcome, which is beneficial for achieving high-sensitivity infrared detection at room temperature.

[0043] Step S5: An electric field is applied to the piezoelectric layer 500, causing the piezoelectric layer 500 to generate strain and transmit it to the infrared absorption layer 400, so as to regulate the phonon density injected from the infrared absorption layer 400 into the two-dimensional confinement layer 300.

[0044] The piezoelectric layer 500 and the infrared absorption layer 400 are closely attached together. When an electric field is applied to the piezoelectric layer 500, the piezoelectric layer 500 will expand or contract (i.e. strain) microscopically due to its inverse piezoelectric effect. This deformation will cause stress to the infrared absorption layer 400 in close contact with it. This stress will directly cause the same deformation of the crystal lattice of the infrared absorption layer 400, i.e. the lattice constant (interatomic distance) is elongated or compressed. By optimizing the strain size, the frequency of the phonon 2 generated by the infrared absorption layer 400 can be more matched to the frequency that can be accepted by the two-dimensional confinement layer 300, thereby improving the injection efficiency of the phonon 2.

[0045] In some embodiments, the two-dimensional confinement layer 300 is prepared by a dry transfer technique through van der Waals force. Specifically, a polydimethylsiloxane (PDMS) film is used as a transfer medium, which is attached to the source substrate on which the two-dimensional confinement layer 300 is grown, and the two-dimensional confinement layer 300 sample is attached to the surface of the PDMS by mechanical peeling. Subsequently, accurate positioning is performed with the aid of an optical microscope, and the two-dimensional confinement layer 300 is released and transferred to the preset position on the surface of the infrared absorption layer 400 by slightly heating the PDMS or applying local mechanical pressure to reduce its adhesion, thereby forming a high-quality heterojunction interface.

[0046] The strain generated by the piezoelectric layer 500 optimizes the phonon generation characteristics of the infrared absorption layer 400 and the interface phonon 2 transport efficiency with the two-dimensional confinement layer 300, and improves the effective phonon density injected into the two-dimensional confinement layer 300. By converting the phonon 2 injection into a dynamically controllable process, it is beneficial to realize high-performance infrared detection.

[0047] Step S7, detecting the change of the current between the source electrode 100 and the drain electrode 200 to detect the infrared light 1.

[0048] The phonon 2 injected by the infrared absorption layer 400 will interact strongly with the carriers provided by the source-drain bias in the two-dimensional confinement layer 300, thereby causing a change in the current signal. Thus, the incident infrared light 1 is ultimately converted into a change in the current signal of the two-dimensional confinement layer 300, thereby realizing the detection of the infrared light 1.

[0049] The infrared detection method based on phonon injection provided by the embodiment utilizes the layer structure of the piezoelectric layer 500-infrared absorption layer 400-two-dimensional confinement layer 300, converts the infrared photon into phonon 2 through the infrared absorption layer 400, and actively controls the phonon 2 injection efficiency by means of piezoelectric strain, and realizes infrared detection by detecting the current change in the two-dimensional confinement layer 300 due to the injection of phonon 2. Thus, the inherent high dark current problem of the traditional infrared detection relying on narrow-bandgap semiconductors is avoided from the physical mechanism, the amplification and optimization of the detection signal are realized through active strain control, and high-performance and high-sensitivity room-temperature infrared detection is realized.

[0050] In some embodiments, the two-dimensional confinement layer 300 is one of a nanosheet, a nanoribbon, or a nanowire.

[0051] In the two-dimensional confinement layer 300, such as in a nanosheet, a nanoribbon, and a nanowire, the number of atoms is extremely small, and the size in the confinement direction is extremely small (usually comparable to the phonon wavelength), resulting in a very limited number of specific phonon modes that can be accommodated. Due to the limited "capacity" of the phonon mode, when the phonon 2 is injected from the infrared absorption layer 400, these limited phonon modes will be quickly "filled up", thus reaching a saturation state, i.e., the phonon bottleneck effect occurs. Once the phonon bottleneck occurs, the carrier-phonon scattering will change dramatically, thus causing a huge and detectable change in current.

[0052] By utilizing the strong quantum confinement effect inherent in low-dimensional nanostructures such as nanosheets, nanoribbons, or nanowires, the number of phonon modes that can be accommodated inside is extremely limited, thus ensuring that the phonon bottleneck state can be reached under limited phonon 2 injection, thereby triggering a dramatic change in carrier transport characteristics, thus realizing the amplification of weak phonon 2 injection into a significant electrical signal, thereby realizing high-sensitivity infrared detection.

[0053] In some embodiments, the two-dimensional confinement layer 300 has a band gap greater than or equal to 0.3 eV.

[0054] The band gap of the two-dimensional confinement layer 300 determines the intrinsic carrier concentration, and the intrinsic carrier concentration is the main source of dark current. By limiting the band gap of the two-dimensional confinement layer 300 to be not less than 0.3 eV, it is physically ensured that the intrinsic carrier concentration of the two-dimensional confinement layer 300 is extremely low at room temperature, thereby suppressing the dark current and its noise to a negligible level. This creates the necessary conditions for detecting the weak electrical signal change caused by phonon 2 injection, thereby achieving high signal-to-noise ratio and high detection rate at room temperature.

[0055] In some embodiments, the material of the two-dimensional confinement layer 300 is one of black phosphorus, molybdenum disulfide, or tungsten ditelluride.

[0056] Among them, the two-dimensional confinement materials such as black phosphorus, molybdenum disulfide, or tungsten ditelluride not only meet the strict requirements of low dark current and low noise at room temperature in terms of band gap characteristics. More importantly, their inherent strong electron-phonon coupling characteristics can efficiently convert the disturbance of phonon 2 injection into significant electrical signal changes, thereby providing a foundation for realizing high-sensitivity, low-noise room-temperature infrared detection.

[0057] In some embodiments, the two-dimensional confinement layer 300 has a length of 80 nm and a thickness of 10 nm.

[0058] The length of the two-dimensional confinement layer 300 is set to 80 nm, and the thickness is set to 10 nm, aiming to create a nanoscale conductive channel with extremely strong phonon-electron interaction sensitivity and significant quantum confinement effect. The thickness of 10 nm ensures that the movement of carriers in the thickness direction is strongly limited, enhancing the coupling efficiency with the injected phonons 2; and the length of 80 nm precisely sets a limited phonon 2 accommodation space, making the phonon mode easy to reach saturation at a lower injection level, thereby rapidly triggering a significant "phonon bottleneck effect". This size combination enables a small change in phonon density to be efficiently converted into a significant change in source-drain current, facilitating high response, low noise, and room temperature operation of the infrared detector.

[0059] In some embodiments, a periodic alternating electric field is applied to the piezoelectric layer 500, so that the piezoelectric layer 500 generates a periodic strain; the frequency range of the periodic alternating electric field is 1 kHz to 100 MHz.

[0060] The lower limit of the frequency range of the periodic alternating electric field is set to 1 kHz, thereby effectively avoiding the low-frequency region dominated by flicker noise. Limited by the mechanical response speed of the piezoelectric material and the bandwidth of the subsequent detection circuit, the lower limit of the frequency range of the periodic alternating electric field is set to 100 MHz.

[0061] By applying a periodic alternating electric field to modulate the phonon 2 injection process at a high frequency, the detection signal is shifted from the low-frequency region with high noise to the high-frequency region with extremely low noise level, and then the coherent detection technology such as lock-in amplification can be used to selectively extract the effective signal synchronized with the modulation frequency, thereby greatly suppressing the flicker noise and various background noises, and achieving an order of magnitude improvement in the signal-to-noise ratio and detection sensitivity of the detector.

[0062] In some embodiments, the electric field strength applied to the piezoelectric layer 500 has a value ranging from 0.1 to 10 .

[0063] wherein the lower limit of the electric field regulation is 0.1 V / μm, and the upper limit is 10 V / μm. The lower limit ensures that even the smallest regulation signal can trigger observable phonon injection effects, achieving high sensitivity of detection; and the upper limit avoids the risk of breakdown, fatigue or non-linear distortion of the piezoelectric material caused by excessive electric field, ensuring the long-term reliability and stability of the device. By setting the above electric field regulation range, the entire regulation process based on phonon injection has high response, excellent repeatability and low power consumption, which is conducive to precise and reliable infrared detection.

[0064] By setting a specific electric field regulation range, it is ensured that a sufficient and linearly controllable strain can be generated in the piezoelectric layer 500 through the inverse piezoelectric effect, so as to be effectively transmitted to the infrared absorption layer 400 and modulate the phonon state thereof.

[0065] In some specific embodiments, the infrared detection method based on phonon injection includes the following steps:

[0066] 1) Preparation of a stacked structure. First, a molybdenum disulfide nanosheet with a thickness of about 10 nm and a length of about 80 nm is obtained by mechanical exfoliation, and is precisely transferred to an indium antimonide (InSb) infrared absorption layer 400 by using a dry transfer technology. Subsequently, a source electrode 100 and a drain electrode 200 are formed at both ends of the molybdenum disulfide nanosheet by means of photolithography, electron beam evaporation (deposition of 10 nm Ti or 50 nm Au) and exfoliation process. Finally, a PZT piezoelectric sheet with a thickness of 200 μm is attached to the back of the indium antimonide infrared absorption layer 400.

[0067] 2) Infrared detection. A constant bias voltage V0 is applied between the source and drain electrodes, and the dark current I0 is measured. The infrared light 1 is incident from the back of the infrared absorption layer 400, is absorbed by the infrared absorption layer 400 and generates phonons 2. At this time, an alternating electric field with a frequency of 1 MHz and a field strength of 5 V is applied to the PZT piezoelectric layer 500, and the PZT piezoelectric layer 500 generates a periodic strain due to the inverse piezoelectric effect and transmits it to the infrared absorption layer 400, modulates the phonon state thereof and enhances the injection efficiency of the phonons 2 to the molybdenum disulfide channel. Please refer to Figure 3 , Figure 3 for the schematic diagram of the observed current provided by the embodiments of the present application. As shown in Figure 3 , when the injected phonon number density reaches , the phonon mode of the molybdenum disulfide tends to be saturated (a phonon bottleneck effect is generated), the carrier mobility is reduced, and the source-drain current I is significantly reduced (the current change ratio I / I0 is less than 1). The current change signal can be captured by the detection circuit, and by observing the reduction amplitude of the current, the density of the injected phonons 2 can be directly inferred, and the intensity of the infrared light 1 can be accurately perceived. The explicit corresponding relationship provides a basis for realizing quantitative and high-sensitivity infrared detection.

[0068] Please refer to Figure 4 , Figure 4 for the schematic diagram of the current change ratio versus the phonon number density provided by the embodiments of the present application. As shown in Figure 4 , the current change ratio decreases with the increase of the phonon number density and eventually saturates.

[0069] Correspondingly, please refer to Figure 5 , Figure 5A schematic diagram of an infrared detection device based on phonon injection provided in an embodiment of this application is shown below. Figure 5 As shown, the device includes: a stacked structure comprising a piezoelectric layer 500, an infrared absorption layer 400, and a two-dimensional confinement layer 300 stacked sequentially; a source electrode 100 and a drain electrode 200 for forming a conductive channel are disposed on the two-dimensional confinement layer 300; the infrared absorption layer 400 is used to absorb incident infrared photons to generate phonons 2; a modulation unit is used to apply an electric field to the piezoelectric layer 500, causing the piezoelectric layer 500 to generate strain and transmit it to the infrared absorption layer 400, so as to regulate the phonon density injected from the infrared absorption layer 400 into the two-dimensional confinement layer 300; and a detection unit is used to detect the current change between the source electrode 100 and the drain electrode 200 to detect infrared light 1.

[0070] Please refer to Figure 6 , Figure 6 This is a schematic diagram illustrating the variation of the noise equivalent power of the infrared detection device provided in the embodiments of this application with the bandgap. Figure 6 As shown, when a two-dimensional confinement layer 300 with a band gap of 0.3 eV is used, the noise equivalent power of the infrared detection device is reduced by 0.1, which means that the noise equivalent power of the infrared detection device proposed in this application is far superior to that of traditional detectors.

[0071] Further functional descriptions of the above modules and units are the same as those in the corresponding embodiments described above, and will not be repeated here.

[0072] In this embodiment, the phonon injection-based infrared detection device is presented in the form of a functional unit. Here, a unit refers to an ASIC (Application Specific Integrated Circuit) circuit, a processor and memory that execute one or more software or fixed programs, and / or other devices that can provide the above functions.

[0073] Please see Figure 7 , Figure 7 This application provides a schematic diagram of the structure of a computer device, as shown in the embodiment of the present application. Figure 7As shown, the computer device includes one or more processors 10, memory 20, and interfaces 30 for the various components to communicate with one another. The various components communicate through the use of the various buses, and can be mounted on a common motherboard or in other manners as appropriate. The processor 10 can process instructions for execution within the computer device, including instructions stored in the memory 20 or elsewhere to implement routines for displaying graphical information, such as a GUI on an external input / output device, such as a display device coupled to the interface 30. In some embodiments, multiple processors and / or multiple buses can be employed as appropriate, as will be appreciated by those skilled in the art. Additionally, various components of the computer device can be used for processing instructions according to the embodiments, as will be appreciated. The computer device 100 is further illustrated in terms of a number of functional components and various embodiments include fewer, different and / or additional components not shown in FIG. 1. For example, the computer device 100 can also include one or more communication devices 40, such as a modem or network interface adapter to enable communications with a network. The computer device 100 can also include one or more input / output devices 50, such as a keyboard, mouse, or other input device to allow a user to interact with the computer device 100. Additionally, the computer device 100 can include one or more output devices 60, such as displays or speakers to facilitate output to a user. Figure 7 The processor 10 is used as an example in the embodiments.

[0074] The processor 10 can be a central processing unit, a network processor, or a combination thereof. The processor 10 can further include a hardware chip. The hardware chip can be an application specific integrated circuit, a programmable logic device, or a combination thereof. The programmable logic device can be a complex programmable logic device, a field programmable logic device, a general array logic, or any combination thereof.

[0075] The memory 20 stores instructions executable by the at least one processor 10 to cause the at least one processor 10 to perform the methods illustrated in the embodiments.

[0076] The memory 20 can include a program storage area and a data storage area. The program storage area can store an operating system, application programs, etc. required by at least one function. The data storage area can store data created by the computer device, etc. In addition, the memory 20 can include a high-speed random access memory, and can further include a non-volatile memory, such as at least one disk storage device, a flash memory device, or other non-volatile solid-state storage device. In some alternative embodiments, the memory 20 can optionally include a memory located remotely from the processor 10, which can be connected to the computer device through a network. Examples of the network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and a combination thereof.

[0077] The memory 20 can include a volatile memory, such as a random access memory, and can also include a non-volatile memory, such as at least one disk storage device, a flash memory device, or other non-volatile solid-state storage device. The memory 20 can also include an array of a combination of the above types of storage devices.

[0078] The computer device further includes a communication interface 30 for the computer device to communicate with other devices or communication networks.

[0079] The embodiments of the present application further provide a computer readable storage medium, and the method according to the embodiments of the present application can be implemented in hardware, firmware, or recorded in a storage medium, or be implemented as computer code originally stored in a remote storage medium or a non-transitory machine readable storage medium and downloaded through a network and stored in a local storage medium, so that the method described herein can be processed by such software on a storage medium using a general purpose computer, a special purpose processor, or programmable or special hardware. The storage medium can be a magnetic disk, an optical disk, a read-only memory, a random access memory, a flash memory, a hard disk, or a solid state disk, etc. Further, the storage medium can also include a combination of the above-mentioned types of memories. It can be understood that the computer, the processor, the microprocessor controller, or the programmable hardware includes a storage component that can store or receive software or computer code, when the software or computer code is accessed and executed by the computer, the processor, or the hardware, the method shown in the above embodiments is implemented.

[0080] The embodiments of the present application provide a computer program product, which includes computer instructions stored in a computer readable storage medium. A processor of a computer device reads the computer instructions from the computer readable storage medium, and the processor executes the computer instructions, so that the computer device executes the method of any of the embodiments of the present application.

Claims

1. An infrared detection method based on phonon injection, characterized in that, The method includes: A stacked structure is provided, wherein the stacked structure includes a piezoelectric layer, an infrared absorption layer and a two-dimensional confinement layer stacked sequentially, the band gap of the two-dimensional confinement layer is greater than or equal to 0.3 eV, and a source and a drain for forming a conductive channel are provided on the two-dimensional confinement layer; The infrared absorption layer absorbs incident infrared photons to generate phonons; A periodic alternating electric field is applied to the piezoelectric layer, causing the piezoelectric layer to generate periodic strain and transmit it to the infrared absorption layer, so as to regulate the phonon density injected from the infrared absorption layer into the two-dimensional confinement layer. The change in current between the source and the drain is detected to detect infrared light.

2. The method according to claim 1, characterized in that, The two-dimensional confinement layer is one of nanosheets, nanoribbons, or nanowires.

3. The method according to claim 1, characterized in that, The material of the two-dimensional confinement layer is one of black phosphorus, molybdenum disulfide, or tungsten ditelluride.

4. The method according to claim 1, characterized in that, The two-dimensional confinement layer has a length of 80 nm and a thickness of 10 nm.

5. The method according to claim 1, characterized in that, The frequency range of the periodic alternating electric field is from 1 kHz to 100 MHz.

6. The method according to claim 1, characterized in that, The method further includes applying an electric field strength to the piezoelectric layer with a value ranging from 0.

1. Up to 10 .

7. An infrared detection device based on phonon injection, used to implement the infrared detection method based on phonon injection as described in any one of claims 1-6, characterized in that, The device includes: A stacked structure comprising a piezoelectric layer, an infrared absorption layer, and a two-dimensional confinement layer stacked sequentially; the two-dimensional confinement layer having a source and a drain for forming a conductive channel; and the infrared absorption layer for absorbing incident infrared photons to generate phonons. A control unit is used to apply an electric field to the piezoelectric layer, causing the piezoelectric layer to generate strain and transmit it to the infrared absorption layer, so as to control the phonon density injected from the infrared absorption layer into the two-dimensional confinement layer. The detection unit is used to detect the current change between the source and the drain in order to detect infrared light.

8. A computer device, characterized in that, include: A memory and a processor are communicatively connected, the memory stores computer instructions, and the processor executes the computer instructions to perform the infrared detection method based on phonon injection as described in any one of claims 1 to 6.

9. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer instructions for causing the computer to execute the phonon injection-based infrared detection method according to any one of claims 1 to 6.

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