Photonic device, switching device and computing device

Abstract

The embodiment of the invention provides a photonic device, a switching device and a computing device, relates to the technical field of semiconductors, and mainly aims to improve the integration level of the photonic device. The photonic device comprises a substrate, a modulation structure and a phase change layer. Wherein the modulation structure is located on one side of the substrate and is provided with a plurality of photonic crystal holes, and the plurality of photonic crystal holes are used for forming a photonic crystal microcavity. The phase change layer is located on the side, away from the substrate, of the modulation structure, and the orthographic projection of the phase change layer on the substrate is at least partially overlapped with the orthographic projection of the photonic crystal microcavity on the substrate and surrounds at least one part of the orthographic projection of at least one photonic crystal hole on the substrate. The phase change layer in the photonic device can regulate and control the resonant wavelength of the photonic crystal microcavity and the photonic crystal hole according to the phase change of the phase change layer, so that light with different wavelengths can selectively pass through the photonic device, and the photonic device and related devices with low energy consumption, high integration and wavelength selection characteristics can be realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to a photonic device, a switching device and a computing device. BACKGROUND

[0002] A photonic device is a functional device taking a photon as an information carrier, and is an important bridge for the integration of light and computing. Specifically, on the one hand, in the field of communication technology (CT) as a pipeline side, it is necessary to construct an equalization module by integrating photonic devices in the optical domain to complete the optical domain equalization of the transmission signal in the communication link. On the other hand, in the field of information technology (IT) as a cloud side, in the face of the explosive growth of computing power demand, a single core grain often cannot meet the required computing power, and a computing power cluster constructed by multiple core grains needs photonic devices to actively regulate the transmission state of the optical signal in order to fully exert the computing power of the core grain. Therefore, the field of communication technology and the field of information technology often need to use photonic devices to form a wavelength selection switch to realize the processing of optical signals. The improvement of the integration degree of the photonic device helps to achieve smaller granularity optical domain high-speed switching and realize more efficient computing power networking. Therefore, how to improve the integration degree of the photonic device has become a technical problem to be solved. SUMMARY

[0003] Embodiments of the present application provide a photonic device, a switching device and a computing device, and the main purpose is to improve the integration degree of the photonic device.

[0004] To achieve the above purpose, the embodiments of the present application adopt the following technical solutions:

[0005] In a first aspect, the embodiments of the present application provide a photonic device, which comprises a substrate, a modulation structure and a phase change layer. The modulation structure is located on one side of the substrate and is also provided with a plurality of photonic crystal holes for forming a photonic crystal microcavity. The phase change layer is located on the side of the modulation structure away from the substrate and comprises a first phase change pattern and a second phase change pattern. The orthographic projection of the first phase change pattern on the substrate at least partially overlaps with the orthographic projection of the photonic crystal microcavity on the substrate, and the orthographic projection of the second phase change pattern on the substrate surrounds at least a part of the orthographic projection of at least one photonic crystal hole on the substrate.

[0006] The photonic device provided by the embodiment of the present application can control the resonant wavelength of the photonic crystal microcavity and the photonic crystal hole according to the phase state change of the phase change layer, and the photonic crystal microcavity and the photonic crystal hole can selectively pass light of the corresponding wavelength based on the resonant wavelength, so that the photonic device can selectively pass light of different wavelengths. In this way, on the one hand, the photonic device has the characteristics of small size and high integration by using the characteristics of small size and convenient integration of the photonic crystal hole and the photonic crystal microcavity. On the other hand, the phase change layer can be made of a phase change material with non-volatile characteristics, and the non-volatile characteristics of the phase change layer can maintain the modulation parameters of the photonic device to the light unchanged even after power failure without the need for continuous power supply, so that the wavelength selection characteristics of the photonic device can be maintained, and the energy consumption of the photonic device can be effectively reduced.

[0007] In combination with the first aspect, in a possible implementation manner of the first aspect, the modulation structure is strip-shaped and extends along the first direction. The photonic device further includes a waveguide structure. The waveguide structure includes: an input waveguide and an output waveguide, and the input waveguide and the output waveguide are located on opposite sides of the modulation structure along a second direction. The second direction intersects the first direction. The input waveguide has a first input end and a first output end, and the output waveguide has a second input end and a second output end. The first output end and the second input end are respectively coupled with the photonic crystal microcavity. In this implementation manner, the strip-shaped modulation structure can provide a light path with sufficient length for the input light of the photonic device, so as to fully realize the modulation of the light and output light with the required wavelength range. The input waveguide and the output waveguide can be located on both sides of the modulation structure in the width direction, which can further ensure the length of the modulation structure in a limited space, so as to provide a light path with sufficient length and further improve the modulation effect of the light.

[0008] In combination with the first aspect, in a possible implementation manner of the first aspect, the number of the waveguide structures is multiple. The multiple waveguide structures include: a first waveguide structure and a second waveguide structure. The input waveguide in the first waveguide structure and the output waveguide in the second waveguide structure are located on the same side of the modulation structure. The input waveguide in the second waveguide structure and the output waveguide in the first waveguide structure are located on the same side of the modulation structure. In this implementation manner, the multiple input waveguides and the multiple output waveguides are adaptively arranged, which can increase the input light path and the output light path, increase the light flux of the waveguide structure, and enable the modulation structure to process multiple light signals, thereby enhancing the light signal processing performance of the photonic device.

[0009] With reference to the first aspect, in a possible implementation of the first aspect, the first output end of the input waveguide of the first waveguide structure and the second input end of the output waveguide of the second waveguide structure are connected and form an integrated structure. In this way, the part of the waveguide structure coupled with the modulation structure can be reduced, and the size of the photonic device can be further reduced, and the integration of the photonic device can be improved.

[0010] With reference to the first aspect, in a possible implementation of the first aspect, the input waveguide includes a first sub-portion and a second sub-portion connected with each other. The output waveguide includes a third sub-portion and a fourth sub-portion connected with each other. The first sub-portion is in a strip shape and extends along a first direction, and a free end of the first sub-portion is the first input end. The second sub-portion is in an arc shape, and a free end of the second sub-portion is the first output end. The third sub-portion is in an arc shape, and a free end of the third sub-portion is the second input end. The fourth sub-portion is in a strip shape and extends along the first direction, and a free end of the fourth sub-portion is the second output end. In this implementation, the extending direction of the first sub-portion and the extending direction of the third sub-portion are set to be the same as the extending direction of the modulation structure, so that the space waste of the photonic device can be avoided, and the integration of the photonic device can be improved.

[0011] With reference to the first aspect, in a possible implementation of the first aspect, the distance between the photonic crystal hole and the first sub-portion is greater than or equal to 3 times the size of the photonic crystal hole. In this way, the signal interference between the photonic crystal hole and the waveguide structure can be avoided.

[0012] With reference to the first aspect, in a possible implementation of the first aspect, the size of the photonic crystal hole is less than or equal to 1.5 μm, and the distance between the photonic crystal hole and the first sub-portion is greater than or equal to 2 μm. In this way, the photonic crystal hole and the photonic crystal microcavity formed by the photonic crystal hole can be used to modulate the light in a specific wavelength range, and the signal interference between the photonic crystal hole and the waveguide structure can be avoided.

[0013] With reference to the first aspect, in a possible implementation of the first aspect, the input waveguide includes a plurality of first sub-portions, and the plurality of first sub-portions are parallel to each other. The distance between any two adjacent first sub-portions is greater than or equal to 3 times the size of the photonic crystal hole. In this way, the signal interference between the structures in the waveguide structure can be avoided.

[0014] With reference to the first aspect, in a possible implementation of the first aspect, the photonic device further includes an electric heating layer. The electric heating layer includes a first sub-heating layer. The first sub-heating layer is located on a side of the phase change layer away from the modulation structure, or between the phase change layer and the modulation structure. The electric heating layer can be used to heat the phase change layer, so that the thermal phase change of the phase change layer can be realized.

[0015] With reference to the first aspect, in a possible implementation of the first aspect, the electric heating layer includes a plurality of sub-heating layers, the plurality of sub-heating layers include a first sub-heating layer and a second sub-heating layer, and the second sub-heating layer is located on a side of the phase change layer away from the first sub-heating layer. In this way, the thermal response efficiency of the phase change layer is improved by using the plurality of sub-heating layers.

[0016] With reference to the first aspect, in a possible implementation of the first aspect, an area of a contact surface between the electric heating layer and the phase change layer is greater than an area of an overlapping part of a normal projection of the electric heating layer on the substrate and a normal projection of the phase change layer on the substrate. By increasing the area of the contact surface between the electric heating layer and the phase change layer, the thermal response efficiency of the phase change layer is also improved.

[0017] With reference to the first aspect, in a possible implementation of the first aspect, the photonic device further includes an electrode group and a control device. The electrode group includes a first electrode and a second electrode. The first electrode and the second electrode are respectively located on opposite sides of the modulation structure and are respectively electrically connected to opposite ends of the electric heating layer. The control device is electrically connected to the electrode group. In this implementation, the control device can be used to control the electrode group to be powered on, so as to control the electric heating layer to be powered on and heated.

[0018] With reference to the first aspect, in a possible implementation of the first aspect, the photonic device further includes an isolation layer located between the phase change layer and the modulation structure. In this way, the structural layering effect between the phase change layer and the modulation structure is ensured, and then the signal processing capability of the photonic device is ensured.

[0019] With reference to the first aspect, in a possible implementation of the first aspect, a material of the isolation layer is the same as a material of the substrate. In this way, the photonic device is facilitated to be manufactured.

[0020] With reference to the first aspect, in a possible implementation of the first aspect, the modulation structure is in a strip shape and extends along a first direction. Along the first direction, a dimension of the modulation structure is greater than or equal to 2 / 3 of a dimension of the photonic device. The length of the modulation structure affects the filtering effect. In this implementation, the modulation structure can be as long as possible, and then the modulation effect of the photonic device is ensured.

[0021] Secondly, the embodiments of the present application also provide a switching device, which includes a circuit board and the photonic device in any of the above embodiments, and the photonic device is connected to the circuit board.

[0022] With reference to the second aspect, in a possible implementation of the second aspect, the number of the photonic devices is a plurality, and an output end of an nth photonic device is connected to an input end of an (n+1)th photonic device. n is a positive integer.

[0023] In a third aspect, the embodiments of the present application further provide a computing device, comprising: a signal source, a signal receiver and the photonic device in any of the above embodiments. Or comprising: a signal source, a signal receiver and the switching device in any of the above embodiments. Wherein the input end of the photonic device is connected with the signal source, and the output end of the photonic device is connected with the signal receiver.

[0024] With reference to the third aspect, in a possible implementation manner of the third aspect, the signal source comprises at least one of the following: a laser source, an optical cable and an integrated circuit. The signal receiver comprises at least one of the following: an optical cable and an integrated circuit.

[0025] With reference to the third aspect, in a possible implementation manner of the third aspect, the number of the photonic devices is multiple, the multiple photonic devices are cascaded with each other, and the input ends of at least two photonic devices are connected with the signal source.

[0026] The technical effects brought by the design manners in the second aspect or the third aspect can refer to the technical effects brought by the different design manners in the first aspect, and will not be described herein again. BRIEF DESCRIPTION OF DRAWINGS

[0027] Figure 1 is a structural block diagram of a computing device provided by the embodiments of the present application;

[0028] Figure 2 is a structural block diagram of another computing device provided by the embodiments of the present application;

[0029] Figure 3 is a structural diagram of a switching device provided by the embodiments of the present application;

[0030] Figure 4 is a structural diagram of a photonic device provided by the embodiments of the present application;

[0031] Figure 5 is a top view of a photonic device provided by the embodiments of the present application;

[0032] Figure 6 is a sectional view of the photonic device in the embodiment shown in Figure 5

[0033] Figure 7 is a sectional view of the photonic device in the embodiment shown in Figure 5

[0034] Figure 8 is a top view of a phase change layer provided by the embodiments of the present application;

[0035] Figure 9 is a top view of another photonic device provided by the embodiments of the present application; ​​

[0036] Figure 10 is a top view of still another photonic device provided by an embodiment of the present application;

[0037] Figure 11 is a top view of still another photonic device provided by an embodiment of the present application;

[0038] Figure 12 is Figure 5 is another sectional view of the photonic device in the embodiment shown along the B-B' direction;

[0039] Figure 13 is Figure 5 is another sectional view of the photonic device in the embodiment shown along the A-A' direction;

[0040] Figure 14 is Figure 5 is still another sectional view of the photonic device in the embodiment shown along the A-A' direction;

[0041] Figure 15 is Figure 5 is still another sectional view of the photonic device in the embodiment shown along the B-B' direction;

[0042] Figure 16 is a flow chart of steps of a control method of a photonic device provided by an embodiment of the present application. DETAILED DESCRIPTION

[0043] The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application.

[0044] Hereinafter, the terms "first", "second", and the like are used only for the purpose of distinguishing between functionally and / or structurally similar or identical items, and cannot be understood as indicating or implying relative importance or implying the number of the indicated technical features. Therefore, the features defined with "first", "second", and the like can explicitly or implicitly include one or more of the features.

[0045] In the description of the present application, unless otherwise specified, " / " represents that the objects before and after the " / " are in an "or" relationship, for example, A / B can represent A or B; "and / or" in the present application is only a description of the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B, which can represent: A exists alone, A and B exist together, and B exists alone, where A and B can be singular or plural.

[0046] Also, in the description herein, "multiple" means two or more, unless otherwise specified. "At least one of the following (a list of items)" or similar phrases means any one of the items in the list, including single or multiple items. For example, "at least one of a, b, or c" can mean a, b, c, a-b, a-c, b-c, or a-b-c, where a, b, and c can be single or multiple items.

[0047] In addition, in the present application, the orientation terms such as "upper", "lower", "left", "right", "horizontal", and "vertical" are defined with respect to the orientation in which the components in the drawings are shown, and it should be understood that these directional terms are relative concepts, which are used for relative description and clarification, and can change accordingly according to the change of the orientation in which the components are placed in the drawings. Unless otherwise specified and limited, the term "connection" should be understood broadly, for example, the "connection" can be optical connection, and can also be electrical connection. For another example, the "connection" can be fixed connection, or detachable connection, or integral; can be directly connected, or indirectly connected through an intermediate medium.

[0048] Meanwhile, in the embodiments of the present application, the words "exemplary" or "for example" are used to mean serving as an example, instance, or illustration. Any embodiment or design described herein as "exemplary" or "for example" should not be construed as being preferred or advantageous over other embodiments or designs. Rather, the use of "exemplary" or "for example" is intended to present concepts in a concrete manner, and to facilitate understanding.

[0049] Exemplary embodiments are described herein with reference to cross-sectional and / or plan view illustrations that are schematic illustrations of idealized embodiments. In other words, the dimensions of the layers and regions shown in the figures are exaggerated for clarity. Thus, aspects of the embodiments can take on different shapes and forms than those illustrated in the figures. Therefore, the figures are not intended to limit the examples presented herein. As such, the exemplary embodiments should not be construed as being limited to the shapes and forms of the regions illustrated in the figures, but rather, the shapes and forms of the regions are intended to be illustrative of aspects of the embodiments. For example, a substrate illustrated as a rectangle can have curved features. Thus, the regions illustrated in the figures are schematic and not intended to be limiting of the regions of the devices actually implemented. The figures are intended to be merely illustrative and not limiting of the scope of the exemplary embodiments.

[0050] In addition, the business scenarios described in the embodiments of the present application are for more clearly illustrating the technical solutions of the embodiments of the present application, and do not constitute a limitation on the technical solutions provided by the embodiments of the present application. It can be known by those skilled in the art that, with the emergence of new business scenarios, the technical solutions provided by the embodiments of the present application are also applicable to similar technical problems.

[0051] The photonic device can be used to compose a switching device to realize dynamic regulation between a light source and a light receiver, and thus can be applied to the field of information technology and the field of communication technology.

[0052] To meet market demand, whether it is a computing device in the field of information technology or a communication link in the field of communication technology, it is necessary to improve its own integration. Taking the field of communication technology as an example, its development trend is to replace electricity with light and to replace Moore with non-Moore. Under this development trend, it is necessary to reduce the loss and energy consumption of the photonic device, ensure the adjustable dispersion of the photonic device, reduce the size of the photonic device, and improve the integration of the photonic device. In the field of information technology, because of the failure of Moore's law, the related technology proposes an electrical switching system to build a computing cluster containing multiple computing cores to meet the computing power demand, but it is limited by the interconnection bandwidth and is difficult to fully exert the full computing power of multiple computing cores. Therefore, it is also necessary to ensure the adjustable dispersion of the photonic device and improve the energy efficiency and integration of the photonic device.

[0053] In some possible implementation manners, some photonic devices based on micro-opto-electro-mechanical systems are proposed, which are based on the principle of preparing part of the optical waveguide as a cantilever beam structure suspended above and below. Under the action of an external electric field, the cantilever beam structure will deform, causing the optical connection state between the upper optical waveguide and the lower optical waveguide to change, thereby realizing the modulation of light through the photonic device. Such a device can realize non-volatile modulation, that is, the light transmission state can remain unchanged after the external electric field is removed, which is conducive to reducing energy consumption. Although such a device can help reduce energy consumption to some extent, it does not have wavelength selection characteristics, and its overall size still needs to be further reduced. Moreover, due to the mechanical deformation involved, a high driving voltage is required, and the energy consumption needs to be further reduced.

[0054] In some possible implementation manners, another photonic device that helps improve its own integration is also proposed, which includes a thermal-optical integrated device based on silicon material, a carrier-doped integrated device based on silicon material, an electro-optical integrated device based on lithium niobate material, and the like. These photonic devices use physical principles such as carrier effect, electro-optical effect, or thermal-optical effect to apply an electric field or a thermal field around the light transmission structure, so that the refractive index of the light field transmission region changes, thereby affecting the light field transmission state and realizing active regulation of the device on the light signal transmission state. The modulation characteristics of such a photonic device are volatile, that is, after the external electric field or thermal field is removed, the regulation effect of the photonic device on the light signal disappears. Therefore, to realize continuous light signal manipulation, an external electric field needs to be applied for control at all times, which will make the energy consumption of the photonic device high.

[0055] In some possible implementation manners, still other photonic devices are proposed, including micro-ring type and Mach-Zehnder interference type integrated photonic devices based on a phase change material. The principle is to prepare an optical waveguide as a micro-ring resonator with wavelength selection characteristics or a Mach-Zehnder interference structure with a broadband interference response characteristic. A phase change material with non-volatile optical phase change characteristics is covered on the waveguide, and the phase change material is connected with a heating electrode. Under the action of an applied electric field, the temperature of the material changes, the material undergoes optical phase change, the refractive index changes, thereby affecting the transmission state of the optical signal below, and the intensity of the transmitted light signal is modulated. Although such a photonic device can realize non-volatile modulation, that is, the transmitted light state can remain unchanged after the applied electric field is removed, and the energy consumption is low, the size of the photonic device still needs to be further reduced due to the principle of the structure, and it is difficult to realize high-density integration. Moreover, taking the Mach-Zehnder interference type photonic device as an example, it cannot realize wavelength selection characteristic modulation, which limits the performance of the photonic device.

[0056] Therefore, the embodiments of the present application provide a photonic device, a switching device comprising the photonic device, and a computing device comprising the photonic device or the switching device. The photonic device is also an integrated photonic device. In some application scenarios, the photonic device can be arranged individually or in combination.

[0057] Embodiments of the present application provide a computing device, which can be a single-photon counting camera, a single-photon computer, a brain-like supercomputer, or other types of user equipment or terminal devices. The computing device can also be a network device such as a base station. The computing device can also be a radio frequency power amplifier, an analog driver, a discrete device, or other devices. Embodiments of the present application do not specially limit the specific form of the computing device. In the above-mentioned application scenarios, the photonic device as a basic constituent end unit can affect important performance parameters such as the running mode, power consumption, and volume of the system.

[0058] Reference Figure 1 , Figure 1 is a structural block diagram of a computing device provided by the embodiments of the present application. As Figure 1 shown, the computing device 1000 includes a signal source 100, a signal receiver 200, and a photonic device 300.

[0059] The input end of the photonic device 300 is connected with the signal source 100, and the output end of the photonic device 300 is connected with the signal receiver 200.

[0060] In some optional embodiments, referring to Figure 1 In the same computing device, the number of photonic devices 300 can also be one.

[0061] In some optional embodiments, the number of the photonic devices 300 in the same computing device can also be multiple, and the multiple photonic devices 300 are cascaded with each other, and the input ends of at least two photonic devices 300 are connected with the signal source.

[0062] In the above embodiments, the "cascaded with each other" means that the input end of one photonic device 300 is connected with the output end of the previous photonic device 300, and the process is recursively performed.

[0063] In the above embodiments, the signal source 100 can output the first optical signal to the photonic device 300, and the photonic device 300 can selectively modulate the first optical signal by the optical signal with the set wavelength to obtain and output the second optical signal to the signal receiver 200.

[0064] In some optional embodiments, the signal source 100 includes but is not limited to at least one of the following: a laser source, an optical cable, and an integrated circuit. The signal receiver 200 includes but is not limited to at least one of the following: an optical cable and an integrated circuit.

[0065] Exemplarily, the optical cable can include an optical fiber.

[0066] Exemplarily, the integrated circuit includes a core particle. Specifically, the type of the integrated circuit can include but is not limited to a photonic integrated circuit or an electrical integrated circuit, and the type of the core particle can include but is not limited to a photonic computing core particle or an electrical computing core particle.

[0067] In some optional embodiments, the signal source 100 can also include a spatial light signal source for providing a spatial light signal.

[0068] Referring to Figure 2 , Figure 2 is a structural block diagram of another computing device provided by the embodiments of the present application. As shown in Figure 2 , the computing device 1000 includes a signal source 100, a signal receiver 200, and a switching device 400.

[0069] In some optional embodiments, referring to Figure 2 , the number of the switching device 400 in the same computing device can also be one.

[0070] In some optional embodiments, the number of the switching device 400 in the same computing device can also be multiple.

[0071] In combination with Figure 1 and Figure 2 , the switching device 400 can include the photonic device 300.

[0072] Referring to Figure 3 , Figure 3A structural diagram of a switch device is provided in the embodiments of the present application. As shown in Figure 3 The switch device 400 can further include a circuit board 401, and the photonic device 300 is connected to the circuit board 401.

[0073] In some optional embodiments, the circuit board 401 can include a photonic circuit board. An optical path can be arranged in the circuit board 401, and the optical path is used to transmit an optical signal. Specifically, the optical path in the circuit board 401 can include an input optical path and an output optical path, the input optical path is connected to the input end of the photonic device, and the output optical path is connected to the output end of the photonic device.

[0074] With reference to Figure 3 In some optional embodiments, in the same switch device 400, the number of photonic devices 300 can be multiple, and in the multiple photonic devices 300, the output end of the nth photonic device 300 is connected to the input end of the (n+1)th photonic device 300, so as to realize the mutual cascading of the multiple photonic devices 300 in the same switch device 400, and n is a positive integer.

[0075] In some optional embodiments, the switch device 400 can be used to construct an optical interconnection network switching system with wavelength selection characteristics. After the switch device 400 is co-packaged with a core particle, the switch device 400 can be used as a computing unit. The photonic device 300 can realize high-speed interconnection between multiple core particles. The switch device 400 itself can also be used as a basic unit, which can be applied to the interconnection between multiple computing devices in the information technology field, and can also be applied to the signal on-the-fly processing field in the communication technology field, and support switching between the on state and the off state of the communication link and dynamic compensation of dispersion. The basic unit, the computing unit or the optical interconnection system can be sold as a separate product.

[0076] With reference to Figure 1 and Figure 2 The computing device 1000 can also include, but is not limited to, a computing device in the information technology and communication technology fields, such as a single computing unit like a board card or an acceleration card, or a computing system composed of multiple board cards or multiple acceleration cards. The computing device 1000 can also be applied to the computing and interconnection field, and a plurality of photonic devices in the computing device can support large-scale cluster high-speed all-to-all interconnection and improve computing power. In some application scenarios, the photonic device and the core particle can be co-packaged to form a computing unit. Multiple computing units can be further integrated to form a computing system. The computing unit or the computing system can be packaged and sold as a separate product.

[0077] With reference to Figure 4 , Figure 4is a structural diagram of a photonic device provided by an embodiment of the present application. For the convenience of illustration, Figure 4 Mainly shows a substrate 1, a modulation structure 2, a waveguide structure 3, and an electrode group 4 included in a photonic device 300.

[0078] In some optional embodiments, the material of the substrate 1 includes but is not limited to silicon dioxide.

[0079] In some optional embodiments, the material of the modulation structure 2 includes but is not limited to one of the following: silicon, silicon nitride, silicon dioxide, silicon oxynitride, lithium niobate.

[0080] As shown in Figure 4 , the modulation structure 2 is located on one side of the substrate 1. The modulation structure 2 has a plurality of photonic crystal holes 21 formed therein, and the plurality of photonic crystal holes 21 are used to form a photonic crystal microcavity 22.

[0081] In some optional embodiments, the modulation structure 2 can be in a strip shape and extend along a first direction X. In some optional embodiments, by setting the size of each photonic crystal hole 21, the arrangement mode of the plurality of photonic crystal holes 21, the distance between adjacent two photonic crystal holes 21, and the like, the area where the photonic crystal microcavity 22 is located can be adjusted. For example, the area where the photonic crystal microcavity 22 is located can cover the center of the modulation structure 2 along the first direction X. For example, the position of the photonic crystal microcavity 22 in the modulation structure 2 can refer to the area shown by the dashed line in Figure 4 .

[0082] In some optional embodiments, at least part of the plurality of photonic crystal holes 21 can be blind holes, and the opening of the blind hole can be formed on the side surface of the modulation structure 2 away from the substrate 1.

[0083] In some other optional embodiments, at least part of the plurality of photonic crystal holes 21 can be through holes, and the axis of the photonic crystal hole 21 can intersect the substrate. The axis of the photonic crystal hole 21 is a virtual straight line passing through the center of the photonic crystal hole 21. Optionally, the axial direction of the through hole can be the same as the normal direction of the substrate 1. The normal direction of the substrate 1 can be the normal direction of the surface of the substrate 1 facing the modulation structure 2 or the normal direction of the surface of the substrate 1 away from the modulation structure 2.

[0084] In the embodiments of the present application, any column of photonic crystal holes 21 along the first direction can be periodically arranged to form a photonic crystal structure in the modulation structure 2. The photonic crystal holes 21 can also form a photonic crystal microcavity 22 in the photonic crystal structure by configuring different arrangement period structures. The photonic crystal microcavity 22 can be used to regulate the dispersion relation of the photonic crystal structure and also can be used to select the wavelength of the light propagating in the photonic crystal structure. Therefore, the modulation structure 2 can be considered to include the photonic crystal structure.

[0085] By setting the size, arrangement and spacing between two adjacent photonic crystal holes 21, photonic crystal microcavities 22 with different shapes and positions can be formed. The following exemplary embodiments of the present application are described.

[0086] In some alternative embodiments, the plurality of photonic crystal holes 21 can include a plurality of hole columns, which extend along the first direction X and are arranged along the second direction Y.

[0087] In some alternative embodiments, the number of photonic crystal holes 21 in each hole column can be equal or unequal.

[0088] In some alternative embodiments, the plurality of hole columns can also be periodically arranged along the second direction Y.

[0089] In some alternative embodiments, the plurality of hole columns can include a first hole column and a second hole column, which can be arranged in a staggered manner to form the photonic crystal microcavity 22 in the modulation structure 2. The first hole column and the second hole column can be adjacent.

[0090] In some alternative embodiments, the orthogonal projection of a part of the photonic crystal holes 21 in the first hole column and the second hole column on the substrate 1 at least partially overlaps with the orthogonal projection of the photonic crystal microcavity 22 on the substrate 1.

[0091] In some alternative embodiments, the photonic crystal holes 21 whose orthogonal projection on the substrate 1 at least partially overlaps with the orthogonal projection of the photonic crystal microcavity 22 on the substrate 1 are defined as first sub-holes, and the plurality of photonic crystal holes 21 also include second sub-holes. The spacing between the first sub-holes and the second sub-holes is greater than the spacing between any two adjacent second sub-holes, so as to form the photonic crystal microcavity 22 in the modulation structure 2.

[0092] In some alternative embodiments, along the first direction X, the number of photonic crystal holes 21 located on the opposite sides of the photonic crystal microcavity 22 is equal.

[0093] For convenience of illustration, Figure 4 The phase change layer and the electric heating layer are not shown. Figure 5is a top view of a photonic device provided by an embodiment of the present application. In the embodiment shown in Figure 5 Compared with Figure 4 , a top view of an optional electric heating layer 6 is shown.

[0094] Figure 6 is Figure 5 is a sectional view of the photonic device in the embodiment shown in along the A-A' direction. Figure 7 is Figure 5 is a sectional view of the photonic device in the embodiment shown in along the B-B' direction. Figure 7 Only to show the positional relationship and connection relationship between the electric heating layer 6 and other film layers, and not to limit the appearance of the actual product. Exemplarily, part of the structure in the electric heating layer 6 can also fall into the gap between the modulation structure 2 and the waveguide structure 3. Figure 8 is a top view of a phase change layer provided by an embodiment of the present application.

[0095] In combination with Figure 6 - Figure 8 The photonic device 300 further includes a phase change layer 5. The phase change layer 5 is located on the side of the modulation structure 2 away from the substrate 1. In the embodiment shown in

[0096] In combination with Figure 5 In some embodiments, the modulation structure in which the photonic crystal microcavity 22 is located can also have a photonic crystal hole 21. Therefore, in combination with Figure 5 and Figure 8 In some optional implementations, the orthographic projection of the first phase change pattern 51 on the substrate 1 can also surround at least part of the orthographic projection of the at least one photonic crystal hole 21 on the substrate 1, and / or, the orthographic projection of the second phase change pattern 52 on the substrate 1 can also at least partially overlap with the orthographic projection of the photonic crystal microcavity 22 on the substrate.

[0097] In combination with Figure 5 - Figure 8 By the structural relationship between the phase change layer 5 and the photonic crystal hole 21 and the photonic crystal microcavity 22 in the embodiment of the present application, the phase change layer 5 is configured to be able to adjust the resonant wavelength of the photonic crystal microcavity 22 and the photonic crystal hole 21 according to the phase state of itself. The photonic crystal microcavity 22 and the photonic crystal hole 21 are configured to be able to select the wavelength of the first optical signal input into the photonic crystal microcavity 22 and the photonic crystal hole 21 based on the resonant wavelength of itself, obtain a second optical signal and output from the modulation structure 2.

[0098] In some optional embodiments, the phase change layer 5 can comprise a thermal phase change optical material. The phase change layer 5 is capable of changing its phase state when heated to a specific temperature, thereby changing its optical properties.

[0099] Through the above embodiments, the modulation structure 2 in the photonic device 300 is provided with the photonic crystal hole 21 and the photonic crystal microcavity 22, and the phase change layer 5 is located on one side of the modulation structure (including the photonic crystal microcavity) where the photonic crystal hole is located. The phase change layer 5 is capable of regulating the resonant wavelength of the photonic crystal microcavity 22 and the photonic crystal hole 21 according to its own phase change characteristics, so that the photonic device 300 can be used as a wavelength selection switch, and by switching the transmission state of light in the photonic device 300, light of different wavelengths can be selectively passed. Therefore, the photonic device 300 not only has the wavelength selection characteristic, but also has the characteristics of small size and high integration of the photonic crystal hole 21 and the photonic crystal microcavity 22, so that the photonic device 300 has the characteristics of small size and high integration.

[0100] The photonic device has non-volatility and wavelength selection characteristics, and also has the advantages of low loss, adjustable dispersion, low energy consumption, small size, high integration, etc. It can constitute a wavelength selection switch with non-volatility and dynamic reconfigurability. When applied to a switching device and a computing device, the switching device and the computing device can balance performance, energy efficiency and integration.

[0101] In some optional embodiments, the phase change layer 5 can also have non-volatility. Specifically, the phase change layer 5 can use a non-volatile thermal phase change optical material.

[0102] Wherein, heating the phase change layer 5 can change the phase state of the phase change material, so that the modulation structure has the required modulation parameters, including the wavelength of the selected passed light. After removing the heat field from the phase change layer 5, the phase change layer 5 can also maintain the phase state, so that the modulation structure maintains the required modulation parameters, until the next heating, the phase state of the phase change layer 5 changes, and the modulation parameters of the modulation structure also change.

[0103] Therefore, in some optional embodiments, the material of the phase change layer can include but is not limited to at least one of the following: SbSe, SbS, GST, GSST.

[0104] According to the above embodiment, the phase change layer 5 can be made of a phase change material with non-volatility, and the phase change layer 5 is combined with the photonic crystal microcavity 22 by covering the photonic crystal microcavity 22 with the phase change layer 5. The phase change layer 5 can not only switch the transmission state of the photonic device 300, but also maintain the modulation parameter of the photonic device 300 to light unchanged even after power-off by using the non-volatility of the phase change layer 5 without continuous power supply. Therefore, the energy consumption of the photonic device can be effectively reduced, and the photonic device 300 has the characteristics of low energy consumption, small size and wavelength selection.

[0105] In some optional embodiments, the size of the modulation structure 2 is greater than or equal to 2 / 3 of the size of the photonic device 300 along the first direction X. The length of the modulation structure 2 affects the filtering effect. Through this embodiment, the modulation structure 2 can be as long as possible, thereby ensuring the performance of the photonic device in processing optical signals.

[0106] Reference Figure 4 In some optional embodiments, the photonic device further includes a waveguide structure 3. The type of the waveguide structure 3 can include but is not limited to at least one of the following: a strip waveguide, a ridge waveguide and a photonic crystal waveguide.

[0107] In some optional embodiments, the material of the waveguide structure 3 can be the same as that of the modulation structure 2, so as to be etched based on the same film and through the same etching process.

[0108] Figure 9 - Figure 11 are respectively top views of some photonic devices provided by the embodiments of the present application. Figure 9 - Figure 11 The modulation structure 2 and the waveguide structure 3 are mainly illustrated. In combination with Figure 4 and Figure 9 , the waveguide structure 3 includes an input waveguide 31 and an output waveguide 32, and the input waveguide 31 and the output waveguide 32 are respectively located on opposite sides of the modulation structure 2 along a second direction Y. The second direction Y intersects the first direction X.

[0109] Reference Figure 9 The input waveguide 31 has a first input end 3101 and a first output end 3102, and the output waveguide 32 has a second input end 3201 and a second output end 3202. The first output end 3102 and the second input end 3201 are respectively coupled with the photonic crystal microcavity 22. The first input end 3101 is configured to receive a first optical signal input from outside the photonic device. The first output end 3102 is configured to couple the first optical signal out to the modulation structure 2. The second input end 3201 is configured to receive a second optical signal coupled out by the modulation structure 2. The second output end 3202 is configured to output the second optical signal to the outside of the photonic device.

[0110] Thus, in combination Figure 9 - Figure 11 , the optical signal can be input into the modulation structure 2 from one side of the modulation structure 2 along the second direction Y through the input waveguide 31, and the optical signal can be reflected multiple times in the modulation structure 2. During the reflection of the optical signal, the photonic crystal hole 21 and the photonic crystal microcavity 22 in the modulation structure 2 can perform resonant filtering based on the resonant wavelength thereof, and selectively output the optical signal from the other side of the modulation structure 2 along the second direction Y through the output waveguide 32 according to the wavelength of the light. In the embodiment of the present application, the modulation structure 2 extends along the first direction X, and the input waveguide 31 and the output waveguide 32 are respectively located on the two sides of the modulation structure 2 along the second direction Y, which can provide a longer modulation path for the optical signal input into the photonic device 300, and the modulation path, i.e., the propagation path of the optical signal in the modulation structure, can extend along the first direction X.

[0111] In some optional embodiments, the input waveguide 31 and the output waveguide 32 can be located on the two sides of the width direction of the strip-shaped modulation structure 2, which can further ensure the length of the modulation structure 2 in a limited space, thereby providing an optical path with sufficient length and further improving the modulation effect of the light.

[0112] In combination Figure 4 and Figure 9 , in some optional embodiments, the manner in which the first output end 3102 and the second input end 3201 are coupled with the photonic crystal microcavity 22 can include evanescent wave coupling. For this purpose, in some optional embodiments, the distance between the modulation structure 2 and the waveguide structure 3 can be greater than or equal to 0.

[0113] In some optional embodiments, when the resonant wavelength of the photonic crystal structure in the modulation structure 2 changes, the coupling state between the modulation structure 2 and the output waveguide 32 can also change, so that the intensity of the optical signal output by the output waveguide 32 from the photonic device 300 also changes. Thus, the switching of the modulation structure 2 on the transmission state of the light in the photonic device 300 can be further realized.

[0114] In some optional embodiments, in the same photonic device 300, the number of waveguide structures 3 can be one or multiple (see Figure 4 ). In the case where the same photonic device 300 includes multiple waveguide structures 3, the multiple waveguide structures 3 can be coupled with the same modulation structure 2, so that one modulation structure 2 can realize the processing of multiple optical signals.

[0115] In some optional embodiments, as Figure 9As shown, the plurality of waveguide structures 3 can include a first waveguide structure 3A and a second waveguide structure 3B. The input waveguide 31 in the first waveguide structure 3A and the output waveguide 32 in the second waveguide structure 3B are located on the same side of the modulation structure 2. The input waveguide 31 in the second waveguide structure 3B and the output waveguide 32 in the first waveguide structure 3A are located on the same side of the modulation structure 2.

[0116] With reference to Figure 9 The embodiments of the present application also exemplarily provide a setting mode of the plurality of waveguide structures, wherein the input end of the first waveguide structure 3A and the input end of the second waveguide structure 3B can be located on opposite sides of the modulation structure 2 along the second direction Y respectively. The output end of the first waveguide structure 3A and the output end of the second waveguide structure 3B can be located on opposite sides of the modulation structure 2 along the second direction Y respectively.

[0117] Further, the input end of the first waveguide structure 3A and the input end of the second waveguide structure 3B can be located on the same side of the modulation structure 2 along the first direction X. The output end of the first waveguide structure 3A and the output end of the second waveguide structure 3B can be located on the other side of the modulation structure 2 along the first direction X.

[0118] Through the above embodiments, the center-symmetrical design of the waveguide structure 3 relative to the modulation structure 2 can be realized, which not only helps to ensure the high integration of the photonic device 300, but also helps to ensure the length balance of the propagation path of the optical signal in the photonic device 300. In the embodiments of the present application, the plurality of input waveguides 31 and the plurality of output waveguides 32 are adaptively set, the input optical path and the output optical path are increased, the optical flux of the waveguide structure 3 can be increased, and the modulation structure 2 can process multiple optical signals, thereby enhancing the optical signal processing performance of the photonic device.

[0119] In some optional embodiments, with reference to Figure 9 The first output end 3102 of the input waveguide 31 of the first waveguide structure 3A and the second input end 3201 of the output waveguide 32 of the second waveguide structure 3B are connected and form an integrated structure.

[0120] Therefore, the part of the first waveguide structure 3A and the second waveguide structure 3B located on the same side of the modulation structure 2 can share one end coupled with the modulation structure 2, which is conducive to reducing the size of the structure in the waveguide structure 3 for coupling with the modulation structure 2, thereby further reducing the size of the photonic device and improving the integration of the photonic device. Moreover, the integrated structure is also conducive to integrally manufacturing the waveguide structure. For example, in the case of using etching process to manufacture the waveguide structure 3, the difficulty of etching can be reduced and the yield of the waveguide structure can be improved.

[0121] In some optional embodiments, with reference to Figure 9The first output end 3102 of the input waveguide 31 of the second waveguide structure 3B and the second input end 3201 of the output waveguide of the first waveguide structure 3A can also be connected and integrated to further improve the integration of the photonic device 300.

[0122] In some optional embodiments, the number of input waveguides in the same waveguide structure can also be multiple. In this way, the same waveguide structure can process multiple signals. The output end of each input waveguide can be coupled to the photonic crystal microcavity in the same area.

[0123] With reference to Figure 10 In some optional embodiments, the input waveguide 31 includes a first sub-portion 311 and a second sub-portion 312 connected together. The output waveguide 32 includes a third sub-portion 321 and a fourth sub-portion 322 connected together. The first sub-portion 311 is in the shape of a strip and extends along the first direction X. The free end of the first sub-portion 311 is the first input end 3101. The second sub-portion 312 is in the shape of an arc. The free end of the second sub-portion 312 is the first output end 3102. The third sub-portion 321 is in the shape of an arc. The free end of the third sub-portion 321 is the second input end 3201. The fourth sub-portion 322 is in the shape of a strip and extends along the first direction X. The free end of the fourth sub-portion 322 is the second output end 3202.

[0124] With reference to Figure 10 The present application also provides an optional embodiment, the shape of each second sub-portion 312 can include multiple circular arcs. In some optional embodiments, the radii of the multiple circular arcs can be equal or unequal.

[0125] Exemplarily, with reference to Figure 10 Each second sub-portion 312 can include two quarter circular arcs.

[0126] For example, the first sub-portion 311 and the second sub-portion 312 are connected at one end of the first sub-portion 311 and one end of the second sub-portion 312. The free end can refer to the end of one of the first sub-portion 311 and the second sub-portion 312 that is not connected to the other.

[0127] By setting the extension direction of the first sub-portion 311, the extension direction of the fourth sub-portion 322, and the extension direction of the modulation structure 2 to be the same, the area occupied by the waveguide structure can be reduced, and the interference of the optical signals can be avoided, which further facilitates the miniaturization of the structure of the photonic device 300 and improves the integration of the photonic device 300.

[0128] With reference to Figure 4 and Figure 11 For example, the first waveguide structure 3A, in some optional embodiments, the number of first sub-portions 311 included in the input waveguide 31 can be one or multiple (such asFigure 11 As shown in FIG. 1, in the case that the input waveguide 31 includes a plurality of first sub-sections 311, the plurality of first sub-sections 311 are parallel to each other. And the distance between any two adjacent first sub-sections 311 is greater than or equal to 3 times the size of the photonic crystal hole 21.

[0129] The distance between any two adjacent first sub-sections 311 can be the minimum distance between any two adjacent first sub-sections 311. For example, the distance between any two adjacent first sub-sections 311 can be the distance between any two adjacent first sub-sections 311 along the second direction Y.

[0130] The size of the photonic crystal hole 21 can refer to the maximum size of the hole cross-section of the photonic crystal hole 21, wherein the hole cross-section can be perpendicular to the axis of the photonic crystal hole 21.

[0131] In some optional embodiments, the shape of the photonic crystal hole 21 can include but is not limited to a cylindrical shape, a prism shape, an elliptical cylindrical shape (refer to FIG. 2), and the like. Figure 4 )。

[0132] For example, the shape of the photonic crystal hole 21 is a cylindrical shape, and the hole cross-section shape of the photonic crystal hole 21 is a circular shape, then the size of the photonic crystal hole 21 can refer to the diameter of the circle. For another example, the shape of the photonic crystal hole 21 is a quadrangular prism shape, and the hole cross-section shape of the photonic crystal hole 21 is a rectangular shape, then the size of the photonic crystal hole 21 can refer to the diagonal length of the rectangle. For another example, the shape of the photonic crystal hole 21 is a triangular prism shape, and the hole cross-section shape of the photonic crystal hole 21 is a triangular shape, then the size of the photonic crystal hole 21 can refer to the length of the longest line segment passing through the triangle.

[0133] Through the above embodiments, not only the light flux of the input waveguide 31 can be increased, but also the modulation structure 2 can process multiple optical signals, and the optical signal processing performance of the photonic device 300 can be enhanced. The size of the photonic crystal hole is often set in reference to the wavelength of light, and the distance between the plurality of first sub-sections is in reference to the size of the photonic crystal hole, which can take into account the influencing factors of the wavelength of light, thereby avoiding signal interference between the first sub-sections in the waveguide structure.

[0134] In combination with Figure 4 and Figure 11 In some optional embodiments, the distance between the photonic crystal hole 21 and the first sub-section 311 is greater than or equal to 3 times the size of the photonic crystal hole. In this way, signal interference between the photonic crystal hole 21 and the waveguide structure 3 can be avoided. The distance between the photonic crystal hole 21 and the first sub-section 311 can refer to the distance between one of the plurality of first sub-sections 311 close to the photonic crystal hole 21 and the photonic crystal hole 21.

[0135] Exemplarily, the ratio between the pitch of the photonic crystal hole and the first sub-part and the size of the photonic crystal hole can be any one of the following: 3, 3.3, 4, 4.2, 5.

[0136] In combination Figure 4 and Figure 11 In some optional embodiments, the size of the photonic crystal hole 21 is less than or equal to 1.5 pm, and the pitch of the photonic crystal hole 21 and the first sub-part 311 is greater than or equal to 2 pm. In this way, the photonic crystal hole 21 and the photonic crystal microcavity 22 formed by the photonic crystal hole 21 can be capable of modulating light in a specific wavelength range, and signal interference between the photonic crystal hole 21 and the waveguide structure 3 can be avoided.

[0137] Exemplarily, the size of the photonic crystal hole 21 can include but is not limited to one of the following: 0.1 pm, 0.3 pm, 0.5 pm, 1 pm, 1.5 pm, and the pitch of the photonic crystal hole 21 and the first sub-part 311 can include but is not limited to one of the following: 2 pm, 2.5 pm, 3 pm, 4 pm, 5 pm.

[0138] In order to achieve resonance of light, the size of the photonic crystal hole 21 can also be set according to the wavelength of the light that needs to pass through. In some optional embodiments, the size of the photonic crystal hole 21 can be greater than or equal to the wavelength of the light that needs to pass through. Exemplarily, for example, the wavelength range of the light that needs to pass through is 500 nm to 600 nm, then the size of the photonic crystal hole 21 can be greater than or equal to 0.6 pm.

[0139] Considering the case that the required resonant wavelength of the modulation structure 2 does not exceed 100 nm, in some optional embodiments, the size of the photonic crystal hole 21 can also be less than 0.1 pm, to further improve the integration of the photonic device 300. Exemplarily, the size of the photonic crystal hole 21 can also include 0.05 pm.

[0140] With reference to Figure 4 In some optional embodiments, the size of the modulation structure 2 along the second direction Y can be greater than a preset multiple of the size of the photonic crystal hole 21, and the preset multiple is greater than the number of photonic crystal holes 21 arranged along the second direction Y in one modulation structure 2. In some optional embodiments, the size of the modulation structure 2 along the second direction Y can be not less than 0.2 pm and not greater than 5 pm, so that the modulation structure 2 can accommodate multiple rows of photonic crystal holes 21. Exemplarily, the size of the modulation structure 2 along the second direction Y can include but is not limited to 0.2 pm, 0.5 pm, 1 pm, 2 pm, 5 pm.

[0141] In some optional embodiments, the size of the modulation structure 2 along the first direction X can be no less than 10 μm and no more than 100 μm, so as to balance the miniaturization of the modulation structure 2 itself and the modulation effect. Exemplarily, the size of the modulation structure 2 along the first direction X can include but is not limited to 10 μm, 30 μm, 50 μm, 80 μm, 100 μm.

[0142] In some optional embodiments, the size of any waveguide structure 3 along the first direction X can be no less than 10 μm and no more than 150 μm, so as to match the size of the modulation structure 2. Exemplarily, the size of any waveguide structure 3 along the first direction X can include but is not limited to 10 μm, 45 μm, 75 μm, 120 μm, 150 μm.

[0143] In some optional embodiments, the size of any waveguide structure 3 along the second direction Y can be no less than 0.1 μm and no more than 1 μm, so as to meet the requirement of light flux. Exemplarily, the size of any waveguide structure 3 along the second direction Y can include but is not limited to 0.1 μm, 0.2 μm, 0.5 μm, 0.8 μm, 1 μm.

[0144] In some optional embodiments, the size of any waveguide structure 3 along the second direction Y can be no less than 0.1 μm and no more than 1 μm, so as to meet the requirement of light flux. Exemplarily, the size of any waveguide structure 3 along the second direction Y can include but is not limited to 0.1 μm, 0.2 μm, 0.5 μm, 0.8 μm, 1 μm.

[0145] In some optional embodiments, the size of the photonic device 300 along the first direction X can be no less than 15 μm and no more than 150 μm, so as to match the size of the modulation structure 2. Exemplarily, the size of the photonic device 300 along the first direction X can include but is not limited to 15 μm, 45 μm, 75 μm, 120 μm, 150 μm.

[0146] In some optional embodiments, the size of the photonic device 300 along the second direction Y can be no less than 2 μm and no more than 20 μm, so as to accommodate the modulation structure 2, the waveguide structure 3, the electrode group 4, etc. Exemplarily, the size of the photonic device along the second direction Y can include but is not limited to 2 μm, 5 μm, 10 μm, 15 μm, 20 μm.

[0147] According to the above embodiments, a small-size photonic device can be implemented, and the integration of the photonic device is improved.

[0148] In some optional embodiments, the photonic device further includes an electric heating layer 6. The electric heating layer 6 includes a first sub-heating layer 61. Figure 5 - Figure 7 In some optional embodiments, the photonic device further includes an electric heating layer 6. The electric heating layer 6 includes a first sub-heating layer 61.

[0149] Figure 5 - Figure 7 In some optional embodiments, the photonic device further includes an electric heating layer 6. The electric heating layer 6 includes a first sub-heating layer 61.In some embodiments, the first sub-heating layer 61 can be located on the side of the phase change layer 5 away from the modulation structure 2.

[0150] Figure 12 is another cross-sectional view of the photonic device in the embodiment shown in Figure 5 , the first sub-heating layer 61 can also be located between the phase change layer 5 and the modulation structure 2. Figure 5 and Figure 12

[0151] In combination with Figure 5 - Figure 8 and Figure 12 In some optional embodiments, the orthographic projection of the first sub-heating layer 61 on the substrate can overlap the orthographic projection of the phase change layer 5 on the substrate. In yet some optional embodiments, the orthographic projection of the first sub-heating layer 61 on the substrate can also be greater than the orthographic projection of the phase change layer 5 on the substrate, so as to ensure the heating effect.

[0152] Through the above embodiments, the phase change layer 5 can be heated by the first sub-heating layer 61 to realize the thermal phase change of the phase change layer 5, which is simple to manufacture and has less impact on the optical structure.

[0153] In some optional embodiments, the electric heating layer 6 can include a thermal resistance material with high response efficiency, and can specifically include graphene, titanium nitride, titanium, etc.

[0154] Figure 13 is another cross-sectional view of the photonic device in the embodiment shown in Figure 5 , the first sub-heating layer 61 can also be located between the phase change layer 5 and the modulation structure 2. Figure 6 and Figure 13 In yet some optional embodiments, the electric heating layer 6 includes a plurality of sub-heating layers, and the plurality of sub-heating layers include: the first sub-heating layer 61 and a second sub-heating layer 62, the second sub-heating layer 62 being located on the side of the phase change layer 5 away from the first sub-heating layer 61.

[0155] In some optional embodiments, the orthographic projection of the second sub-heating layer 62 on the substrate can overlap the orthographic projection of the first sub-heating layer 61 on the substrate.

[0156] In some optional embodiments, the first sub-heating layer 61 can be located between the modulation structure 2 and the phase change layer 5, and the second sub-heating layer 62 can be located on the side of the phase change layer 5 away from the modulation structure 2.

[0157] In yet some optional embodiments, the second sub-heating layer 62 can be located between the modulation structure 2 and the phase change layer 5, and the first sub-heating layer 61 can be located on the side of the phase change layer 5 away from the modulation structure 2.

[0158] ​The above embodiments can utilize multiple sub-heating layers to increase the contact area between the electric heating layer 6 and the phase change layer 5. Multiple sub-heating layers can simultaneously heat the phase change layer 5, thereby improving the thermal response efficiency of the phase change layer.

[0159] Figure 14 yes Figure 5 Another cross-sectional view of the photonic device in the illustrated embodiment along the A-A' direction. Combined with... Figure 5 and Figure 14 In some optional embodiments, the area of ​​the contact surface between the electric heating layer 6 and the phase change layer 5 is greater than the area of ​​the overlapping portion of the orthographic projection of the electric heating layer 6 on the substrate 1 and the orthographic projection of the phase change layer 5 on the substrate 1.

[0160] In some alternative embodiments, the area of ​​the contact surface between the first sub-heating layer 61 and the phase change layer 5 is greater than the area of ​​the overlapping portion of the orthographic projection of the first sub-heating layer 61 on the substrate 1 and the orthographic projection of the phase change layer 5 on the substrate 1.

[0161] In some alternative embodiments, the area of ​​the contact surface between the second sub-heating layer 62 and the phase change layer 5 is greater than the area of ​​the overlapping portion of the orthographic projection of the second sub-heating layer 62 on the substrate 1 and the orthographic projection of the phase change layer 5 on the substrate 1.

[0162] refer to Figure 14 , Figure 14 The first sub-heating layer 61 is used as an example to illustrate an optional structural relationship between the electric heating layer 6 and the phase change layer 5. Exemplarily, the contact surface between the electric heating layer 6 and the phase change layer 5 can be serrated or wavy to increase the contact area between the electric heating layer and the phase change layer.

[0163] The above embodiments increase the contact area between the electric heating layer 6 and the phase change layer 5 by designing the shape of the contact surface, which helps to further improve the thermal response efficiency of the phase change layer.

[0164] In some alternative embodiments, the electric heating layer 6 and / or the phase change layer 5 may also be located within at least one photonic crystal hole 21 and fill at least a portion of at least one photonic crystal hole 21 to facilitate the fabrication of photonic devices.

[0165] Combination Figure 5 - Figure 7 In some optional embodiments, the photonic device 300 further includes an electrode assembly 4 and a control device (not shown). The electrode assembly includes a first electrode 41 and a second electrode 42. The first electrode 41 and the second electrode 42 are located on opposite sides of the modulation structure 2 and are electrically connected to opposite ends of the electric heating layer 6, respectively. The control device is electrically connected to the electrode assembly 4.

[0166] In some optional embodiments, the electrode group 4 and the electric heating layer 6 can be arranged in the same layer (for reference Figure 6 ) at the region where the electrode group 4 is electrically connected with the electric heating layer 6, and located at the same side of the substrate 1.

[0167] In order to facilitate the manufacturing and ensure the electrical connection effect, in yet some optional embodiments, the electrode group 4 and the electric heating layer 6 can be arranged in a stacked manner at the region where the electrode group 4 is electrically connected with the electric heating layer 6, the electrode group 4 can be located at the side of the electric heating layer 6 away from the substrate 1, or the electric heating layer 6 can be located at the side of the electrode group 4 away from the substrate 1, and the stacked relationship between the electrode group 4 and the electric heating layer 6 can depend on the manufacturing sequence of the electrode group 4 and the electric heating layer 6.

[0168] In some optional embodiments, the material of the electrode group 4 can include a conductive metal with low resistance, and can specifically include copper, silver, aluminum, etc.

[0169] Through the embodiment, the electrode group can be controlled to be powered on by the control device, so as to control the electric heating layer to be powered on and heated.

[0170] Figure 15 is another cross-sectional view of the photonic device in the embodiment shown in Figure 5 . For reference Figure 15 , in some optional embodiments, the photonic device further includes an isolation layer 7, which is located between the phase change layer 5 and the modulation structure 2. In this way, the refractive index stratification effect between the phase change layer 5 and the modulation structure 2 is ensured, and then the signal processing capability of the photonic device is ensured.

[0171] In some optional embodiments, the isolation layer 7 can include a material with a large refractive index difference from the material of the modulation structure 2, such as silicon dioxide, air, etc.

[0172] In some optional embodiments, the isolation layer 7 can also be located in at least one photonic crystal hole 21 and fill at least a part of the at least one photonic crystal hole 21. Due to the manufacturing process, a part of the phase change layer 5 can be manufactured in a part of the photonic crystal hole 21. The photonic crystal hole 21 is filled in advance by the isolation layer 7, which can further ensure the refractive index stratification effect between the phase change layer 5 and the modulation structure 2.

[0173] In some optional embodiments, the material of the isolation layer 7 is the same as the material of the substrate 1, so as to facilitate the manufacturing of the photonic device 300.

[0174] In combination with the above content, the embodiment of the present application further provides a control method of a photonic device, which can be applied to the photonic device, the switching device or the computing device in the above embodiments. The control method includes:

[0175] In step S701, input the first optical signal to the modulation structure. The first optical signal has a first wavelength range.

[0176] In some optional embodiments, the first optical signal can be input to the photonic device through the first input end in the input waveguide and input to the modulation structure from the first output end in the input waveguide. For example, the first optical signal can be input to the photonic crystal microcavity from the first output end in the input waveguide through evanescent wave coupling.

[0177] In step S702, the photonic crystal microcavity and the photonic crystal hole column reflect the light with the second wavelength range in the first optical signal multiple times to obtain the second optical signal based on the resonant wavelength of the photonic crystal microcavity and the photonic crystal hole column, and output the second optical signal from the photonic device. The second optical signal has a second wavelength range.

[0178] The resonant wavelength of the photonic crystal microcavity and the photonic crystal hole column is determined according to the current phase state of the phase change layer.

[0179] In some optional embodiments, the control device applies a voltage to the electrode group to make the electric heating layer covering the modulation structure generate heat, the heat generated by the electric heating layer diffuses to the phase change layer, the phase state of the phase change layer changes, and the refractive index of the phase change layer changes. After the refractive index of the phase change layer changes, the resonant wavelength of the photonic crystal structure in the modulation structure also changes, and the light with a specific wavelength can be selected to pass through.

[0180] In some optional embodiments, the resonant wavelength of the photonic crystal structure in the modulation structure changes, the coupling state of the modulation structure and the output waveguide also changes, the signal intensity of the output second optical signal changes, and the switching of the optical transmission state is realized.

[0181] According to the above embodiments, the resonant wavelength of the modulation structure can be changed by heating the phase change layer, the state of the optical signal is modulated, the phase change layer can be a non-volatile phase change material, the phase state of the phase change material does not change after the voltage applied to the electrode group is removed, the modulation parameter of the optical signal output state can be maintained, and the modulation parameter of the optical signal output state of the modulation structure changes only when the voltage is applied again to change the phase state of the phase change material.

[0182] Figure 16 is a step flow chart of a control method of a photonic device provided by the embodiments of the present application. Referring to Figure 16 In some optional embodiments, a control method of a photonic device is also provided, which includes the following steps:

[0183] In step S711, input the signal light to the input waveguide.

[0184] Step S712, the signal light is coupled to the modulation structure.

[0185] Step S713, a voltage is applied to the motor group, and the phase change layer is thermally phase changed.

[0186] Step S714, the resonant wavelength of the modulation structure changes.

[0187] Step S715, the voltage is removed, and the phase change layer remains in the phase state.

[0188] In combination with the above, in some optional embodiments, the control method further includes:

[0189] Step S721, a first voltage signal is provided to the electrode group, so that the phase change layer has a first phase state. In the case where the phase change layer has the first phase state, the modulation structure absorbs the first light signal.

[0190] Step S722, a second voltage signal is provided to the electrode group, so that the phase change layer has a second phase state. In the case where the phase change layer has the second phase state, the modulation structure absorbs part of the first light signal, and the first light signal is multiple reflected in the modulation structure and finally output as a second light signal.

[0191] Step S723, a third voltage signal is provided to the electrode group, so that the phase change layer has a third phase state. In the case where the phase change layer has the third phase state, the modulation structure absorbs part of the first light signal, and the first light signal is multiple reflected in the modulation structure and finally output as a third light signal having a third wavelength range. The third light signal has the third wavelength range.

[0192] In combination with the above, the present application also provides a manufacturing method of a photonic device, which can be used to manufacture the photonic device in the above embodiments. The manufacturing method includes:

[0193] Step S801, a substrate is provided.

[0194] Step S802, a waveguide layer is formed on one side of the substrate, and the material of the waveguide layer includes but is not limited to one of the following: silicon, silicon nitride, silicon dioxide, silicon oxynitride, lithium niobate.

[0195] Step S803, the waveguide layer is etched to obtain the modulation structure and the waveguide structure in the above embodiments.

[0196] Step S804, a phase change layer and an electric heating layer are formed on the side of the modulation structure away from the substrate.

[0197] Step S805, an electrode group is formed, and the electrode group is connected with a control device.

[0198] The photonic device manufactured by the above embodiments can adopt a relatively mature manufacturing process and has the advantage of low cost.

[0199] In the description of the present specification, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

[0200] The related hardware product proposed in the embodiments of the present application can be dissected and analyzed by slicing to complete the evidence collection. After dissection, the optical structure morphology of the related hardware product proposed in the embodiments of the present application can be collected by an electron microscope, and the materials used by the related hardware product proposed in the embodiments of the present application can be collected by an element analysis device.

[0201] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto, and any person skilled in the art can easily think of changes or replacements within the technical range disclosed by the present application, which should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A photonic device, characterized by, The photonic device comprises: a substrate; a modulation structure located on one side of the substrate; the modulation structure is provided with a plurality of photonic crystal holes for forming a photonic crystal microcavity; a phase change layer located on the side of the modulation structure away from the substrate; the phase change layer comprises a first phase change pattern and a second phase change pattern, a normal projection of the first phase change pattern on the substrate at least partially overlaps with a normal projection of the photonic crystal microcavity on the substrate, and a normal projection of the second phase change pattern on the substrate surrounds at least part of a normal projection of at least one of the photonic crystal holes on the substrate.

2. The photonic device of claim 1, wherein, The modulation structure is strip-shaped and extends along a first direction. The photonic device further comprises a waveguide structure; the waveguide structure comprises an input waveguide and an output waveguide, and the input waveguide and the output waveguide are respectively located on opposite sides of the modulation structure along a second direction; the second direction intersects the first direction. The input waveguide has a first input end and a first output end, and the output waveguide has a second input end and a second output end; the first output end and the second input end are respectively coupled to the photonic crystal microcavity.

3. The photonic device of claim 2, wherein, The number of the waveguide structures is plural; the plural waveguide structures comprise a first waveguide structure and a second waveguide structure; the input waveguide in the first waveguide structure and the output waveguide in the second waveguide structure are located on the same side of the modulation structure; the input waveguide in the second waveguide structure and the output waveguide in the first waveguide structure are located on the same side of the modulation structure.

4. The photonic device of claim 3, wherein, The first output end of the input waveguide of the first waveguide structure and the second input end of the output waveguide of the second waveguide structure are connected and form an integral structure.

5. The photonic device according to any of claims 2-4, wherein, The input waveguide comprises a first sub-portion and a second sub-portion connected to each other; the output waveguide comprises a third sub-portion and a fourth sub-portion connected to each other; The first sub-portion is strip-shaped and extends along the first direction, and a free end of the first sub-portion is the first input end; the second sub-portion is arc-shaped, and a free end of the second sub-portion is the first output end; The third sub-portion is arc-shaped, and a free end of the third sub-portion is the second input end; the fourth sub-portion is strip-shaped and extends along the first direction, and a free end of the fourth sub-portion is the second output end.

6. The photonic device of claim 5, wherein, The distance between the photonic crystal hole and the first sub-portion is greater than or equal to 3 times the size of the photonic crystal hole.

7. The photonic device of claim 6, wherein, The size of the photonic crystal hole is less than or equal to 1.5 μm, and the distance between the photonic crystal hole and the first sub-portion is greater than or equal to 2 μm.

8. The photonic device according to any one of claims 5 to 7, wherein, The number of the first sub-portions included in the input waveguide is plural, and the plural first sub-portions are parallel to each other; The distance between any two adjacent first sub-portions is greater than or equal to 3 times the size of the photonic crystal hole.

9. The photonic device according to any one of claims 1 to 8, wherein, The photonic device further comprises an electric heating layer; the electric heating layer comprises a first sub-heating layer; The first sub-heating layer is located on the side of the phase change layer away from the modulation structure, or between the phase change layer and the modulation structure.

10. The photonic device of claim 9, wherein, The electric heating layer comprises a plurality of sub-heating layers, and the plurality of sub-heating layers comprise the first sub-heating layer and a second sub-heating layer, the second sub-heating layer being located on a side of the phase change layer away from the first sub-heating layer.

11. The photonic device according to claim 9 or 10, characterized in that, An area of a contact surface between the electric heating layer and the phase change layer is greater than an area of an overlapping part of a normal projection of the electric heating layer on the substrate and a normal projection of the phase change layer on the substrate.

12. The photonic device according to any one of claims 9 to 11, characterized in that, The photonic device further comprises: An electrode group comprising a first electrode and a second electrode, the first electrode and the second electrode being respectively located on opposite sides of the modulation structure and being respectively electrically connected to opposite ends of the electric heating layer; A control device electrically connected to the electrode group.

13. The photonic device of any of claims 1 to 12, wherein, The photonic device further comprises an isolation layer located between the phase change layer and the modulation structure.

14. The photonic device of claim 13, wherein, A material of the isolation layer is the same as a material of the substrate.

15. The photonic device of any of claims 1 to 14, wherein, The modulation structure is strip-shaped and extends along a first direction. Along the first direction, a size of the modulation structure is greater than or equal to 2 / 3 of a size of the photonic device.

16. A switching device, characterized by The switching device comprises: A circuit board; The photonic device according to any one of claims 1 to 15, the photonic device being connected to the circuit board.

17. The switching device of claim 16, wherein, The number of the photonic devices is plural, wherein an output end of an nth photonic device is connected to an input end of an (n+1)th photonic device; n is a positive integer.

18. A computing device, comprising: The computing device comprises: A signal source; A signal receiver; The photonic device according to any one of claims 1 to 15, or the switching device according to claim 16 or 17; The input end of the photonic device is connected to the signal source, and the output end of the photonic device is connected to the signal receiver.

19. The computing device of claim 18, wherein, The signal source comprises at least one of a laser source, an optical cable and an integrated circuit; and the signal receiver comprises at least one of an optical cable and an integrated circuit.

20. The computing device of claim 18 or 19, wherein, The number of the photonic devices is plural, and the plural photonic devices are cascaded with each other, and input ends of at least two photonic devices are connected to the signal source.

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