Grid mesh cleaning system and ion source etching equipment

Abstract

The invention provides a grid mesh cleaning system and ion source etching equipment, and relates to the technical field of semiconductors. When the first grid mesh and the second grid mesh are cleaned, plasma is provided for the vacuum cavity through the plasma generation device, opposite positive voltage and negative voltage are applied to the first grid mesh and the second grid mesh through the power supply device respectively, and the voltage applied to the grid meshes is switched between the positive voltage and the negative voltage according to a first set frequency; therefore, part of ions of the plasma in the vacuum cavity are led out and restrained between the first grid mesh and the second grid mesh to do reciprocating motion, the ions collide with stains on the grid meshes to enable the stains to be stripped from the grid meshes, and the purpose of cleaning the grid meshes is achieved. According to the technical scheme provided by the invention, the cleaning of the grid mesh can be completed without dismounting the grid mesh, and a series of problems caused by dismounting and remounting the grid mesh of the ion source etching equipment are avoided.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically, to a gate cleaning system and an ion source etching apparatus. Background Technology

[0002] Ion source etching equipment is a high-precision nanofabrication device based on ion beam etching technology. It utilizes a high-energy ion beam to etch the surface of materials, enabling the fabrication of micro and nanostructures. This process primarily uses ion bombardment combined with collision cascades to blast atoms off the surface of the workpiece, thereby precisely etching the desired structure. Ion beam etching technology is characterized by good directionality and steepness, and can etch a variety of materials, including metals, alloys, oxides, compounds, semiconductors, and insulators. It has wide applications in microelectronics, optics, and nanoscience, enabling the fabrication of nanoscale devices and structures, such as nanowires and nanopores.

[0003] However, in actual production, the etching process is accompanied by the redeposition of backsputtered particles. When this redeposition occurs on the grid of the ion source etching equipment, it causes a change in the grid's resistance, thus affecting the process results. Therefore, the grid of the ion source etching equipment needs to be disassembled and cleaned periodically during production. On the one hand, installation errors during grid disassembly and assembly can affect the process results; on the other hand, the grid disassembly and assembly process needs to be carried out with the vacuum chamber depressurized and opened, which significantly increases downtime and factory production costs. Summary of the Invention

[0004] In view of this, the present invention provides a grid cleaning system and an ion source etching device, which effectively solves the technical problems existing in the prior art. The grid cleaning can be completed without disassembling the grid, avoiding a series of problems caused by disassembling and reinstalling the grid of the ion source etching device.

[0005] To achieve the above objectives, the technical solution provided by the present invention is as follows:

[0006] A grid cleaning system is applied to an ion source etching apparatus, the ion source etching apparatus including a vacuum chamber, and a first grid and a second grid located at the outlet of the vacuum chamber and insulated therefrom, the first grid being located between the vacuum chamber and the second grid. The grid cleaning system includes:

[0007] A plasma generating device connected to the vacuum cavity, the plasma generating device being used to provide plasma to the vacuum cavity during the grid cleaning stage, the grid cleaning stage including a first cleaning stage;

[0008] A power supply device electrically connected to both the first grid and the second grid, wherein the first grid and the second grid are floating during the first cleaning stage, the power supply device is used to apply a first voltage to the first grid and a second voltage to the second grid during the first cleaning stage, wherein the first voltage and the second voltage are opposite positive and negative voltages, and the first voltage and the second voltage switch between positive and negative voltages according to a first set frequency.

[0009] Optionally, the plasma generation device includes:

[0010] An air inlet pipe connected to the vacuum chamber, the air inlet pipe being used to supply process gas to the vacuum chamber;

[0011] A coil arranged around the vacuum cavity;

[0012] and a radio frequency power supply electrically connected to the coil, wherein the radio frequency power supply supplies power to the coil during the grid cleaning stage to ionize the process gas in the vacuum chamber into the plasma.

[0013] Optionally, the first grid is a screen grid, and the second grid is an acceleration grid;

[0014] The power supply device includes: a bipolar power supply, a first switch and a second switch. The bipolar power supply applies the first voltage to the screen grid through the first switch, and the bipolar power supply applies the second voltage to the acceleration grid through the second switch. The first switch and the second switch are used to conduct during the first cleaning stage.

[0015] Optionally, the ion source etching apparatus includes a third grid located between the first grid and the second grid, wherein the first grid, the second grid and the third grid are mutually insulated, wherein the first grid is a screen grid, the third grid is an acceleration grid, the second grid is a deceleration grid, and the deceleration grid is electrically connected to a ground terminal;

[0016] The power supply device includes: a bipolar power supply, a third switch, a fourth switch, and a fifth switch. The bipolar power supply applies the first voltage to the screen grid through the third switch, and the bipolar power supply applies the second voltage to the deceleration grid through the fourth switch.

[0017] Furthermore, the fifth switch is electrically connected between the deceleration gate and the grounding terminal, the third switch and the fourth switch are used to conduct during the first cleaning stage, and the fifth switch is used to disconnect during the first cleaning stage.

[0018] Optionally, the ion source etching apparatus further includes a third grid located on the side of the second grid away from the first grid, wherein the first grid, the second grid, and the third grid are mutually insulated, wherein the first grid is a screen grid, the second grid is an acceleration grid, the third grid is a deceleration grid, and the deceleration grid is electrically connected to the ground terminal;

[0019] The power supply device is electrically connected to the third grid. The grid cleaning stage further includes a second cleaning stage. The third grid is floated in the second cleaning stage. The power supply device is used to apply a second voltage to the second grid and a third voltage to the third grid in the second cleaning stage. The second voltage and the third voltage are opposite positive and negative voltages, and the second voltage and the third voltage switch between positive and negative voltages according to a second set frequency.

[0020] Optionally, the power supply device includes: a first bipolar power supply, a sixth switch, and a seventh switch, wherein the first bipolar power supply applies the first voltage to the screen grid through the sixth switch, and the first bipolar power supply applies the second voltage to the acceleration grid through the seventh switch, and the sixth switch and the seventh switch are used to conduct during the first cleaning stage.

[0021] Optionally, the power supply device includes: a second bipolar power supply, an eighth switch, a ninth switch, and a tenth switch, wherein the second bipolar power supply applies the second voltage to the acceleration gate through the eighth switch, and the second bipolar power supply applies the third voltage to the deceleration gate through the ninth switch;

[0022] Furthermore, the tenth switch is electrically connected between the deceleration gate and the grounding terminal, the eighth switch and the ninth switch are used to conduct during the second cleaning stage, and the tenth switch is used to disconnect during the second cleaning stage.

[0023] Optionally, the frequency at which the power supply switches between positive and negative voltage is 400KHz-13.56MHz.

[0024] Based on the same inventive concept, the present invention also provides an ion source etching apparatus, including the above-described grid cleaning system.

[0025] Optionally, the plasma generation structure of the ion source etching equipment and the plasma generation device of the grid cleaning system are the same device structure.

[0026] Compared with the prior art, the technical solution provided by the present invention has at least the following advantages:

[0027] This invention provides a grid cleaning system and an ion source etching apparatus. The ion source etching apparatus includes a vacuum chamber and a first grid and a second grid located at the outlet of the vacuum chamber and insulated from each other. The first grid is located between the vacuum chamber and the second grid. The grid cleaning system includes: a plasma generating device connected to the vacuum chamber, which provides plasma to the vacuum chamber during a grid cleaning phase, the grid cleaning phase including a first cleaning phase; and a power supply device electrically connected to both the first grid and the second grid, wherein the first grid and the second grid are floating during the first cleaning phase. The power supply device applies a first voltage to the first grid and a second voltage to the second grid during the first cleaning phase, wherein the first voltage and the second voltage are opposite positive and negative voltages, and the first voltage and the second voltage switch between positive and negative voltages according to a first set frequency.

[0028] As described above, during the cleaning of the first and second grids, plasma is supplied to the vacuum chamber via a plasma generation device, and opposite positive and negative voltages are applied to the first and second grids respectively via a power supply device. The voltage applied to the grids switches between positive and negative voltages according to a first set frequency, thereby drawing out some ions from the plasma in the vacuum chamber and confining them to reciprocate between the first and second grids. The ions collide with contaminants on the grids, causing the contaminants to peel off, thus achieving the purpose of cleaning the grids. The technical solution provided by this invention allows for grid cleaning without disassembling the grids, avoiding a series of problems caused by disassembling and reinstalling the grids of the ion source etching equipment. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0030] Figure 1 This is a schematic diagram of a grid cleaning system provided in an embodiment of the present invention;

[0031] Figure 2 This is a schematic diagram of another grid cleaning system provided in an embodiment of the present invention;

[0032] Figure 3 This is a schematic diagram of another grid cleaning system provided in an embodiment of the present invention;

[0033] Figure 4This is a schematic diagram of another grid cleaning system provided in an embodiment of the present invention;

[0034] Figure 5 This is a schematic diagram of another grid cleaning system provided in an embodiment of the present invention;

[0035] Figure 6 This is a schematic diagram of an ion source etching device provided in an embodiment of the present invention. Detailed Implementation

[0036] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0037] As described in the background section, during the actual production process of ion source etching equipment, the redeposition of backsputtered particles occurs alongside the etching process. When this redeposition occurs on the grid of the ion source etching equipment, it causes a change in the grid's resistance, thus affecting the process results. Therefore, the grid of the ion source etching equipment needs to be disassembled and cleaned periodically during production. On the one hand, installation errors during grid disassembly and assembly can affect the process results; on the other hand, the grid disassembly and assembly process needs to be carried out with the vacuum chamber depressurized and opened, which significantly increases downtime and factory production costs.

[0038] Based on this, embodiments of the present invention provide a grid cleaning system and an ion source etching device, which effectively solve the technical problems existing in the prior art. The grid cleaning can be completed without disassembling the grid, avoiding a series of problems caused by disassembling and reinstalling the grid of the ion source etching device.

[0039] To achieve the above objectives, the technical solutions provided by the embodiments of the present invention are as follows, in detail... Figures 1 to 6 The technical solutions provided in the embodiments of the present invention will be described in detail.

[0040] refer to Figure 1 The diagram shown is a schematic representation of a grid cleaning system according to an embodiment of the present invention. The grid cleaning system can be applied to an ion source etching apparatus, which includes a vacuum chamber 10 and a first grid 21 and a second grid 22 located at the outlet of the vacuum chamber 10 and insulated from each other. The first grid 21 and the second grid 22 are isolated from each other by an insulating component (not shown). The first grid 21 is located between the vacuum chamber 10 and the second grid 22. The grid cleaning system includes:

[0041] A plasma generating device 30 is connected to the vacuum chamber 10. The plasma generating device 30 is used to provide plasma to the vacuum chamber during the grid cleaning stage (the plasma is indicated by the label Plasma in the vacuum chamber 10 shown in the figure). The grid cleaning stage includes a first cleaning stage.

[0042] A power supply device 40 is electrically connected to both the first grid 21 and the second grid 22. The first grid 21 and the second grid 22 are floated during the first cleaning stage. The power supply device 40 is used to apply a first voltage to the first grid 21 and a second voltage to the second grid 22 during the first cleaning stage. The first voltage and the second voltage are opposite positive and negative voltages, and the first voltage and the second voltage switch between positive and negative voltages according to a first set frequency.

[0043] Understandably, during the first cleaning stage, when cleaning the first and second grids, plasma is supplied to the vacuum chamber via a plasma generation device, and opposite positive and negative voltages are applied to the first and second grids respectively via a power supply device. The voltage applied to the grids switches between positive and negative voltages according to a first set frequency, thereby drawing out some ions from the plasma in the vacuum chamber and confining them to reciprocate between the first and second grids. The ions collide with contaminants on the grids, causing the contaminants to peel off, thus achieving the purpose of cleaning the grids. The contaminants are the backsplashed particles deposited on the grids. The technical solution provided by this invention allows for grid cleaning without disassembling the grids, avoiding a series of problems caused by disassembling and reinstalling the grids of the ion source etching equipment.

[0044] refer to Figure 2 The diagram shows a structural schematic of another grid cleaning system provided in an embodiment of the present invention. The plasma generation device 30 provided in this embodiment includes: an inlet pipe 31 connected to the vacuum chamber 10, the inlet pipe 31 being used to provide process gas to the vacuum chamber; the process gas can be argon or similar, without specific limitations; a coil 32 arranged spirally around the vacuum chamber 10, the number of spiral turns of the coil 32 around the vacuum chamber 10 being unrestricted; and a radio frequency power supply 33 electrically connected to the coil 32, wherein the radio frequency power supply 33 supplies power to the coil 32 during the grid cleaning stage to ionize the process gas in the vacuum chamber 10 into plasma.

[0045] Continue as Figure 2As shown, the plasma generation device 30 provided in this embodiment of the invention may further include a gas equalization disk 34 disposed in the vacuum chamber 10 and connected to the gas inlet pipe 31. The gas equalization disk 34 is used to make the process gas more uniformly distributed in the vacuum chamber 10. Furthermore, the plasma generation device 30 may also include a matching device 35 electrically connected between the radio frequency power supply 33 and the coil 32. The radio frequency power supply 33 supplies power to the coil 32 through the matching device 35, and the radio frequency energy is transferred to the vacuum chamber 10 through the coil 32 to ionize the process gas in the vacuum chamber 10 into plasma.

[0046] In one embodiment of the present invention, the ion source etching apparatus provided by the present invention may include only two grids: a screen grid and an acceleration grid. See details. Figure 3 The diagram shows a structural schematic of another grid cleaning system provided in an embodiment of the present invention. In this embodiment, the first grid 21 is a screen grid, and the second grid 22 is an acceleration grid. The power supply device includes a bipolar power supply 41, a first switch K1, and a second switch K2. The bipolar power supply 41 applies the first voltage to the screen grid 21 through the first switch K1, and the bipolar power supply 41 applies the second voltage to the acceleration grid 32 through the second switch K2. The first switch K1 and the second switch K2 are used to conduct during the first cleaning stage.

[0047] Understandably, the first terminal of the bipolar power supply provided in this embodiment of the invention is used to output a first voltage, and the second terminal can output a second voltage. The first terminal of the bipolar power supply is electrically connected to the screen grid via a first switch, and the second terminal of the bipolar power supply is electrically connected to the acceleration grid via a second switch. In the first cleaning stage, the bipolar power supply outputs opposite positive and negative voltages through its first and second terminals respectively at a first set frequency. This causes some ions in the plasma to reciprocate between the screen grid and the acceleration grid. The ions collide with contaminants on the screen grid and the acceleration grid, causing the contaminants to peel off from the grid, thus achieving the purpose of cleaning the screen grid and the acceleration grid.

[0048] In one embodiment of the present invention, the ion source etching apparatus provided by the present invention may further include three grids: a screen grid, an accelerating grid, and a decelerating grid. The decelerating grid can block some anti-sputtering particles from depositing on the screen grid and the accelerating grid, while also improving the etching effect. See details. Figure 4The diagram shows a structural schematic of another grid cleaning system provided in an embodiment of the present invention. The ion source etching device provided in this embodiment includes a third grid 23 located between the first grid 21 and the second grid 22. The first grid 21, the second grid 22, and the third grid 23 are mutually insulated. The first grid 21 is a screen grid, the third grid 23 is an accelerating grid, and the second grid 22 is a decelerating grid. The decelerating grid 22 is electrically connected to the ground terminal GND. The power supply device includes a bipolar power supply 42, a third switch K3, a fourth switch K4, and a fifth switch K5. The bipolar power supply 42 applies the first voltage to the screen grid 21 through the third switch K3, and applies the second voltage to the decelerating grid 22 through the fourth switch K4. The fifth switch K5 is electrically connected between the decelerating grid 22 and the ground terminal GND. The third switch K3 and the fourth switch K4 are turned on during the first cleaning stage, and the fifth switch K5 is turned off during the first cleaning stage.

[0049] Understandably, the first terminal of the bipolar power supply provided in this embodiment of the invention is used to output a first voltage, and the second terminal can output a second voltage. The first terminal of the bipolar power supply is electrically connected to the screen grid via a third switch, and the second terminal of the bipolar power supply is electrically connected to the deceleration grid via a fourth switch. In the first cleaning stage, the fifth switch is opened, causing the deceleration grid to float. The bipolar power supply outputs opposite positive and negative voltages through its first and second terminals respectively at a first set frequency, thereby causing some ions in the plasma to reciprocate between the screen grid and the deceleration grid. Since the accelerating grid is located between the screen grid and the deceleration grid, the ions can collide with contaminants on the screen grid, accelerating grid, and deceleration grid, causing the contaminants to peel off from the grid, thus achieving the purpose of cleaning the screen grid and the accelerating grid.

[0050] In one embodiment of the present invention, the ion source etching apparatus provided by the present invention includes a screen grid, an accelerating grid, and a decelerating grid. The grid cleaning system can achieve simultaneous cleaning of the three grids by controlling the screen grid and the decelerating grid with a single power-on control. Furthermore, when the ion source etching apparatus provided by the present invention includes a screen grid, an accelerating grid, and a decelerating grid, the grid cleaning system can also clean the three grids in stages. The ion source etching apparatus provided in this embodiment of the invention further includes a third grid located on the side of the second grid away from the first grid. The first grid, the second grid, and the third grid are mutually insulated. The first grid is a screen grid, the second grid is an acceleration grid, and the third grid is a deceleration grid, and the deceleration grid is electrically connected to a ground terminal. The power supply device is electrically connected to the third grid. The grid cleaning stage further includes a second cleaning stage. The third grid is floated in the second cleaning stage. The power supply device is used to apply a second voltage to the second grid and a third voltage to the third grid in the second cleaning stage. The second voltage and the third voltage are opposite positive and negative voltages, and the second voltage and the third voltage switch between positive and negative voltages according to a second set frequency.

[0051] Understandably, during the grid cleaning stage, a first voltage and a second voltage can be applied to the screen grid and the accelerating grid, respectively, in the first cleaning stage. This draws out some ions from the plasma and confines them between the screen grid and the accelerating grid, causing them to reciprocate. Through collisions between the ions and the contaminants on the grid, the contaminants are peeled off from the screen grid and the accelerating grid, thus completing the cleaning of the screen grid and the accelerating grid. In the second cleaning stage, the voltage applied to the screen grid is stopped, and instead, a second voltage is applied to the accelerating grid and a third voltage is applied to the decelerating grid. This draws out some ions from the plasma and confines them between the accelerating grid and the decelerating grid, causing them to reciprocate. Through collisions between the ions and the contaminants on the grid, the contaminants are peeled off from the accelerating grid and the decelerating grid, thus completing the cleaning of the accelerating grid and the decelerating grid. Therefore, the cleaning of all three grids is completed through the combined use of the first and second cleaning stages.

[0052] For details, please refer to the following: Figure 5The diagram shows a structural schematic of another grid cleaning system provided in an embodiment of the present invention. The power supply device provided in this embodiment includes: a first bipolar power supply 43, a sixth switch K6, and a seventh switch K7. The first bipolar power supply 43 applies the first voltage to the grid 21 through the sixth switch K6, and the first bipolar power supply 43 applies the second voltage to the acceleration grid 22 through the seventh switch K7. The sixth switch K6 and the seventh switch K7 are used to conduct during the first cleaning stage. The power supply device includes a second bipolar power supply 44, an eighth switch K8, a ninth switch K9, and a tenth switch K10. The second bipolar power supply 44 applies the second voltage to the acceleration gate 22 through the eighth switch K8, and the second bipolar power supply 44 applies the third voltage to the deceleration gate 23 through the ninth switch K9. The tenth switch K10 is electrically connected between the deceleration gate 23 and the ground terminal GND. The eighth switch K8 and the ninth switch K9 are turned on during the second cleaning stage, and the tenth switch K10 is turned off during the second cleaning stage.

[0053] Understandably, in the first cleaning stage, switches six and seven are turned on, while switches eight and nine are turned off. Switch ten can be selected to be turned on or off. The first bipolar power supply applies a first voltage to the screen grid through switch six, and applies a second voltage to the acceleration grid through switch seven. This confines ions to reciprocate between the screen grid and the acceleration grid, removing contaminants from the grid through collisions, thus completing the cleaning of the screen grid and the acceleration grid. In the second cleaning stage, switches six and seven are turned off, while switches eight and nine are turned on. Switch ten is turned off, and the deceleration grid is floated. At this time, the second bipolar power supply applies a second voltage to the acceleration grid through switch eight, and applies a third voltage to the deceleration grid through switch nine. This confines ions to reciprocate between the acceleration grid and the deceleration grid, removing contaminants from the grid through collisions, thus completing the cleaning of the acceleration grid and the deceleration grid. Finally, the first and second cleaning stages work together to complete the cleaning of the screen grid, the acceleration grid, and the deceleration grid. As can be seen, the embodiments of the present invention, through the phased grid cleaning method of the first cleaning stage and the second cleaning stage, can clean all three grids according to actual needs, or select to clean only some grids according to actual needs, thus achieving the purpose of flexible grid cleaning.

[0054] In any of the above embodiments provided by the present invention, the frequency at which the power supply device switches between positive and negative voltages is 400 kHz to 13.56 MHz. That is, the first and second set frequencies provided by the embodiments of the present invention can be 400 kHz to 13.56 MHz. By switching the positive and negative voltages applied to the grid at high frequencies, the speed of ions reciprocating between the two grids is increased, the collision force of ions with contaminants is increased, and thus a better cleaning effect on the grid can be ensured.

[0055] Based on the same inventive concept, embodiments of the present invention also provide an ion source etching apparatus, including the grid cleaning system provided in any of the above embodiments.

[0056] For details, please refer to the following: Figure 6 The diagram shows a schematic of an ion source etching device according to an embodiment of the present invention. The ion source etching device includes a quartz cylinder 11, the internal chamber of which is a vacuum chamber 10. The plasma generation structure of the ion source etching device includes an inlet pipe, a gas equalization disk, a coil, a radio frequency power supply, and a matching device. The plasma generation structure of the ion source etching device provided in this embodiment of the present invention is the same as the plasma generation device of the grid cleaning system. The inlet pipe, gas equalization disk, coil, radio frequency power supply, and matching device of the plasma generation structure are the same components as the inlet pipe 31, gas equalization disk 34, coil 32, radio frequency power supply 33, and matching device 35 of the plasma generation device. The coil 32 is arranged around the quartz cylinder 11. The ion source etching apparatus also includes a first DC power supply DC+ electrically connected to the screen 21 and a second DC power supply DC- electrically connected to the accelerating grid 22. The first DC power supply DC+ provides positive charge to the screen 21, and the second DC power supply DC- provides negative charge to the accelerating grid. Both the first DC power supply DC+ and the second DC power supply DC- are de-energized during the grid cleaning phase. Furthermore, the ion source etching apparatus includes a housing 12 that encloses the quartz cylinder 11, the coil 32, and the grid. The ion source etching apparatus also includes a neutralizer (not shown), etc., but the present invention does not impose specific limitations on these components.

[0057] Understandably, when an ion source etching device etches a workpiece, the gas inlet pipe transmits the process gas to the vacuum chamber, and the process gas is evenly distributed within the vacuum chamber by a gas distribution plate. At this time, the radio frequency (RF) power supply powers the coil through a matching unit, and the RF energy is transferred through the coil to the vacuum chamber inside the quartz cylinder to ionize the process gas into plasma. A first DC power supply applies a positive charge to the grid, while a second DC power supply applies a negative charge to the accelerating grid. Through the filtering and acceleration by the grid, the ions in the plasma are given directionality to form an ion beam. Before reaching the workpiece, the ion beam is neutralized by a neutralizer to form a neutral ion beam. The neutral ion beam bombards the surface of the workpiece, thereby achieving the etching process.

[0058] During the etching process of a workpiece using an ion source etching equipment, etching byproducts such as backsputtered particles are generated. Some of these backsputtered particles deposit on the grid, forming contaminants that alter the grid's resistance and affect the process results. This invention addresses this issue by using a grid cleaning system to clean the contaminants on the grid. During the grid cleaning stage, the first and second DC power supplies are switched off, stopping the power supply. Plasma is generated in a vacuum chamber using a plasma generation device. Simultaneously, a positive and negative voltage is applied to the grid via a power supply device to constrain some ions in the plasma to reciprocate between the two grids. Through collisions between the ions and the contaminants, the contaminants are detached from the grid, achieving the purpose of cleaning the grid.

[0059] In any of the above embodiments of the present invention, the material of the grid of the ion source etching device provided by the embodiments of the present invention is molybdenum or graphite, and the present invention does not impose specific limitations on this.

[0060] This invention provides a grid cleaning system and an ion source etching apparatus. The ion source etching apparatus includes a vacuum chamber and a first grid and a second grid located at the outlet of the vacuum chamber and insulated from each other. The first grid is located between the vacuum chamber and the second grid. The grid cleaning system includes: a plasma generating device connected to the vacuum chamber, which provides plasma to the vacuum chamber during a grid cleaning phase, the grid cleaning phase including a first cleaning phase; and a power supply device electrically connected to both the first grid and the second grid, wherein the first grid and the second grid are floating during the first cleaning phase. The power supply device applies a first voltage to the first grid and a second voltage to the second grid during the first cleaning phase, wherein the first voltage and the second voltage are opposite positive and negative voltages, and the first voltage and the second voltage switch between positive and negative voltages according to a first set frequency.

[0061] As described above, during the cleaning of the first and second grids, plasma is supplied to the vacuum chamber via a plasma generation device, and opposite positive and negative voltages are applied to the first and second grids respectively via a power supply device. The voltage applied to the grids switches between positive and negative voltages according to a first set frequency, thereby drawing out some ions from the plasma in the vacuum chamber and confining them to reciprocate between the first and second grids. The ions collide with contaminants on the grids, causing the contaminants to peel off, thus achieving the purpose of cleaning the grids. The technical solution provided by this invention allows for grid cleaning without disassembling the grids, avoiding a series of problems caused by disassembling and reinstalling the grids of the ion source etching equipment.

[0062] In the description of this invention, it should be understood that terms such as "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0063] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0064] In this invention, unless otherwise explicitly specified and limited, terms such as "installation," "connection," "linking," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between components; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0065] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0066] In this invention, the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0067] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A grid cleaning system applied to an ion source etching apparatus, the ion source etching apparatus comprising a vacuum chamber, and a first grid and a second grid which are insulated and located at an outlet of the vacuum chamber, the first grid being located between the vacuum chamber and the second grid, characterized in that, The grid cleaning system comprises: a plasma generating device connected to the vacuum chamber, the plasma generating device being configured to provide plasma to the vacuum chamber during a grid cleaning phase, the grid cleaning phase comprising a first cleaning phase; a power supply device electrically connected to the first grid and the second grid, the first grid and the second grid being floating during the first cleaning phase, the power supply device being configured to apply a first voltage to the first grid and a second voltage to the second grid during the first cleaning phase, wherein the first voltage and the second voltage are opposite positive voltage and negative voltage, and the first voltage and the second voltage are switched between positive voltage and negative voltage at a first set frequency.

2. The screen washing system of claim 1, wherein The plasma generating device comprises: an air inlet pipe connected to the vacuum chamber, the air inlet pipe being configured to provide process gas to the vacuum chamber; a coil surrounding the vacuum chamber; and a radio frequency power supply electrically connected to the coil, wherein the radio frequency power supply is configured to power the coil to ionize the process gas in the vacuum chamber into the plasma during the grid cleaning phase.

3. The screen washing system of claim 1, wherein The first grid is a screen grid, and the second grid is an acceleration grid; The power supply device comprises: a bipolar power supply, a first switch and a second switch, the bipolar power supply applies the first voltage to the screen grid through the first switch, the bipolar power supply applies the second voltage to the acceleration grid through the second switch, and the first switch and the second switch are turned on during the first cleaning phase.

4. The screen washing system of claim 1, wherein The ion source etching device comprises a third grid between the first grid and the second grid, the first grid, the second grid and the third grid are insulated from each other, wherein the first grid is a screen grid, the third grid is an acceleration grid, the second grid is a deceleration grid, and the deceleration grid is electrically connected to a ground terminal; The power supply device comprises: a bipolar power supply, a third switch, a fourth switch and a fifth switch, the bipolar power supply applies the first voltage to the screen grid through the third switch, the bipolar power supply applies the second voltage to the deceleration grid through the fourth switch; and the fifth switch is electrically connected between the deceleration grid and the ground terminal, the third switch and the fourth switch are turned on during the first cleaning phase, and the fifth switch is turned off during the first cleaning phase.

5. The screen washing system of claim 1, wherein The ion source etching device further comprises a third grid on the side of the second grid away from the first grid, the first grid, the second grid and the third grid are insulated from each other, wherein the first grid is a screen grid, the second grid is an acceleration grid, the third grid is a deceleration grid, and the deceleration grid is electrically connected to a ground terminal; The power supply device is electrically connected with the third grid, the grid cleaning stage further comprises a second cleaning stage, the third grid is floating in the second cleaning stage, the power supply device is used for applying the second voltage to the second grid and applying a third voltage to the third grid in the second cleaning stage, wherein the second voltage and the third voltage are opposite positive voltage and negative voltage, and the second voltage and the third voltage switch the positive voltage and the negative voltage according to a second set frequency.

6. The screen washing system of claim 5, wherein The power supply device comprises a first bipolar power supply, a sixth switch and a seventh switch, the first bipolar power supply applies the first voltage to the screen grid through the sixth switch, the first bipolar power supply applies the second voltage to the acceleration grid through the seventh switch, and the sixth switch and the seventh switch are used for being turned on in the first cleaning stage.

7. The screen washing system of claim 5, wherein The power supply device comprises a second bipolar power supply, an eighth switch, a ninth switch and a tenth switch, the second bipolar power supply applies the second voltage to the acceleration grid through the eighth switch, the second bipolar power supply applies the third voltage to the deceleration grid through the ninth switch, and the tenth switch is electrically connected between the deceleration grid and the ground terminal, the eighth switch and the ninth switch are used for being turned on in the second cleaning stage, and the tenth switch is used for being turned off in the second cleaning stage. The frequency of the power supply device when switching the positive voltage and the negative voltage is 400 KHz-13.56 MHz.

8. The screen washing system according to any one of claims 1-7, characterized in that The grid cleaning system comprises the grid cleaning system according to any one of claims 1-8.

9. An ion source etching apparatus, characterized by, The plasma generation structure of the ion source etching device and the plasma generation device of the grid cleaning system are the same device structure.

10. The ion source etching apparatus of claim 9, wherein, ​

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