ECU mos tube protection circuit, control method and microcontroller for coping with induced electromotive force generated by external force pushing door

Abstract

The application discloses an ECU MOS tube protection circuit, a control method and a microcontroller for coping with induced electromotive force generated by an external force pushing a vehicle door, and a control circuit of the protection circuit comprises an MOS control circuit, a pre-driving chip and a timing control circuit; the MOS control circuit comprises an upper MOS tube and a lower MOS tube, and the MOS control circuit receives a pre-driving chip signal to control a motor; under normal working conditions, the upper MOS tube is turned on to control the motor to normally work; under induced electromotive force working conditions, the lower MOS tube is turned on to control the motor to discharge induced electromotive force; the pre-driving chip judges whether induced electromotive force exists or not, and outputs a timing level signal; and the timing control circuit intermittently turns on the control power supply and the MOS control circuit through the timing level signal to control the power supply of the motor. The application can cope with the generation of induced electromotive force, switch the MOS tube of the motor and discharge the induced electromotive force, and reduce the risk of MOS tube breakdown caused by induced electromotive force.

Description

Technical Field

[0001] This application relates to the field of vehicle circuit control systems, specifically to an ECU MOS transistor protection circuit and control method for responding to induced electromotive force generated when an external force pushes a vehicle door. Background Technology

[0002] In vehicle door design, a door motor is used to provide the power to automatically open and close the door. However, due to user habits, manual pushing and pulling of the door is still used in some scenarios. When the door is forcibly opened or closed by external force, especially when the external force is relatively large and causes the door to accelerate rapidly, a large induced electromotive force can be generated inside the door motor. This poses a risk of damaging the motor drive MOSFET and causing damage to the door control ECU. Summary of the Invention

[0003] The purpose of this application is to overcome the shortcomings of the prior art and provide an ECU MOS transistor protection circuit and control method to deal with the induced electromotive force generated by external force pushing the car door, so as to reduce the risk of MOS transistor breakdown caused by induced electromotive force.

[0004] Firstly, this application provides an ECU MOS transistor protection circuit for responding to induced electromotive force generated by external force pushing a car door, including a motor driving the car door and a control circuit for controlling the motor, and adopts the following technical solution:

[0005] The control circuit includes a MOS control circuit, a pre-driver chip, and a timing control circuit;

[0006] The MOS control circuit includes an upper MOS transistor and a lower MOS transistor. The MOS control circuit is connected to the pre-driver chip and receives control signals from the pre-driver chip to control the motor. Under normal operating conditions, the pre-driver chip controls the upper MOS transistor to conduct through the upper potential, thereby controlling the motor to work normally. Under induced electromotive force conditions, the pre-driver chip controls the lower MOS transistor to conduct through the lower potential, thereby controlling the motor to discharge the induced electromotive force.

[0007] The pre-driver chip reads the induced electromotive force signal of the MOS upper transistor, determines whether there is an induced electromotive force, and outputs a timing level signal based on the induced electromotive force.

[0008] A timing level signal is input to the timing control circuit. The control power supply is connected to the MOS control circuit through the timing control circuit. The timing control circuit intermittently switches the control power supply and the MOS control circuit according to the timing level signal to control the power supply to the motor.

[0009] The above technical solution controls the motor by using a MOS control circuit that distinguishes between the upper and lower MOS transistors. During normal motor operation, the upper MOS transistor provides power, while the lower MOS transistor discharges the induced electromotive force (EMF). A pre-driver chip monitors the EMF and controls the upper and lower MOS transistors separately, outputting timing level signals. A timing control circuit synchronously controls the power supply output to the motor based on these timing level signals, stopping power supply when an EMF is generated, further reducing the risk of ECU damage.

[0010] Preferably, in the MOS control circuit, the upper MOS transistor and the lower MOS transistor are NMOS transistors. The gate of the upper MOS transistor is connected to the GH pin of the pre-driver chip, and the gate of the lower MOS transistor is connected to the GL pin of the pre-driver chip. The source of the upper MOS transistor and the drain of the lower MOS transistor are interconnected and connected to the motor. The drain of the upper MOS transistor is connected to the DOOR1_CUR- node and the VS node, respectively. The source of the lower MOS transistor is grounded. The VS node and the DOOR1_CUR- node output induced electromotive force signals.

[0011] The above technical solution provides a circuit for controlling the motor under normal operating conditions and induced electromotive force generation conditions using the upper and lower MOS transistors, respectively. It also provides the pins for the pre-driver chip to output control signals to the upper and lower MOS transistors, as well as the node positions for the pre-driver chip to acquire the induced electromotive force signal.

[0012] Preferably, the MOS control circuit includes a negative MOS control circuit and a positive MOS control circuit with identical structures. The negative MOS control circuit is connected to the negative terminal of the motor, and the positive MOS control circuit is connected to the positive terminal of the motor. The gate of the upper MOS transistor of the negative MOS control circuit is connected to the GH1 pin of the pre-driver chip, and the gate of the lower MOS transistor is connected to the GL1 pin of the pre-driver chip. The gate of the upper MOS transistor of the positive MOS control circuit is connected to the GH2 pin of the pre-driver chip, and the gate of the lower MOS transistor is connected to the GL2 pin of the pre-driver chip.

[0013] By employing the above technical solution, which distinguishes between negative and positive MOS control circuits, separate control of the negative and positive sides of the motor is achieved, enabling bidirectional drive and speed regulation of the motor, and optimizing the management efficiency of induced electromotive force.

[0014] Preferably, the CSIP pin of the pre-driver chip is connected to the VS node, the CSIN pin of the pre-driver chip is connected to the DOOR1_CUR- node, the pre-driver chip obtains the differential chip select signal through the CSIP pin and the CSIN pin, the Vg pin of the pre-driver chip is connected to the VS node, and the CP pin of the pre-driver chip outputs a timing level signal according to the signal obtained from the VS node.

[0015] The above technical solution uses differential chip select signal to suppress signal noise and interference, thereby improving the accuracy of induced electromotive force signal monitoring; the CP pin output of the pre-driver chip is based on the induced electromotive force output timing level signal, which is used to control the output of the control power supply.

[0016] Preferably, the timing control circuit includes a timing control MOS transistor, which is an NMOS transistor. The gate of the timing control MOS transistor is connected to the CP pin. The drain of the timing control MOS transistor is connected to the control power supply, and the source of the timing control MOS transistor is connected to the VS node.

[0017] Through the above technical solution, the timing level signal output by the CP pin is connected to the gate of the timing control MOS transistor to control the conduction of the timing control MOS transistor, thereby controlling the output of the control power supply.

[0018] Preferably, the CP pin is connected to the gate of the timing control MOS transistor through a transistor signal control circuit, which uses an NPN transistor.

[0019] The above technical solutions can enhance the driving force of timing level signals on timing control MOSFETs, optimize the switching speed and response of timing control circuits, and isolate voltage spikes or reverse currents during MOSFET switching.

[0020] Preferably, the control power supply is connected to the drain of the timing control MOSFET via a logic control switch group.

[0021] By combining the logic control switch group with the above technical solutions, it is possible to realize a variety of different strategies and combinations of strategies for controlling the power supply to the motor, thereby achieving fine adjustment of the motor power supply control and realizing different design schemes for door control.

[0022] Preferably, the control circuit also includes an SBC chip, and the control power supply is connected to the SBC chip through a voltage regulator circuit, and the SBC chip supplies power to the pre-driver chip.

[0023] By using the above technical solution, power is supplied to the pre-driver chip via voltage conversion through the SBC, ensuring that the output voltage meets the requirements of the pre-driver chip and improving system stability.

[0024] Secondly, this application provides an ECU MOS transistor control method for responding to induced electromotive force generated when an external force pushes a vehicle door. The technical solution includes the following steps:

[0025] The pre-driver chip monitors whether there is an induced electromotive force on the drain side of the MOS transistor.

[0026] Under normal operating conditions, the MOS control circuit receives the upper potential control signal from the pre-driver chip, the upper MOS transistor is on, the lower MOS transistor is open, and the control power supply supplies power to the motor through the upper MOS transistor.

[0027] When the pre-driver chip detects an induced electromotive force on the drain side of the MOS upper transistor, it sends a lower potential control signal to the MOS control circuit to open the MOS upper transistor and close the MOS lower transistor, thereby discharging the induced electromotive force of the motor.

[0028] The pre-driver chip simultaneously sends an output timing level signal based on the monitored induced electromotive force signal. The timing level signal, through the input timing control circuit, controls the output of the control power supply to the MOS upper transistor, and stops supplying power to the MOS upper transistor when an induced electromotive force is present.

[0029] Thirdly, this application provides a microcontroller for a vehicle door control circuit, including a processor and a memory, wherein the memory contains computer-readable instructions adapted to be loaded by the processor and to execute the steps of the control method described above.

[0030] In summary, this application includes at least one of the following beneficial technical effects:

[0031] 1. This application can use different MOSFETs to control the motor based on different operating conditions. Under normal operating conditions, the upper MOSFET is turned on to supply power to the motor, and under induced electromotive force conditions, the lower MOSFET is turned on to discharge the induced electromotive force, thereby preventing the induced electromotive force from damaging the MOSFET and ECU circuit.

[0032] 2. This application monitors the induced electromotive force using a pre-driver chip and outputs a control signal for the MOSFET based on the induced electromotive force signal, thereby realizing automatic control of the MOSFET.

[0033] 3. The pre-drive chip of this application outputs a timing level signal based on the induced electromotive force signal, thereby automatically disconnecting the control power supply to the motor when the induced electromotive force signal is detected, further ensuring the safety and reliability of the ECU circuit. Attached Figure Description

[0034] Figure 1 This is a schematic diagram of the motor control and induced electromotive force signal monitoring circuit in the embodiments of this application;

[0035] Figure 2 This is a schematic diagram of the pin structure of the pre-driver chip in the embodiments of this application;

[0036] Figure 3 This is a schematic diagram of the timing control circuit in the embodiments of this application;

[0037] Figure 4 This is a schematic diagram of the SBC chip pin structure in the embodiments of this application;

[0038] Figure 5 This is a schematic diagram of the control method in the embodiments of this application. Detailed Implementation

[0039] This specific embodiment is merely an explanation of this application and is not intended to limit it. After reading this specification, those skilled in the art can make modifications to this embodiment without contributing any inventive step, but such modifications are protected by patent law as long as they are within the scope of this application.

[0040] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. It should be noted that in the optional embodiments of this application, the object information and other related data involved require the permission or consent of the object when the embodiments of this application are applied to specific products or technologies, and the collection, use, and processing of related data must comply with the relevant laws, regulations, and standards of the relevant countries and regions. That is to say, if the embodiments of this application involve data related to the object, it needs to be obtained with the authorization and consent of the object, the authorization and consent of the relevant departments, and in compliance with the relevant laws, regulations, and standards of the country and region. If personal information is involved in the embodiments, the acquisition of all personal information requires the consent of the individual. If sensitive information is involved, the separate consent of the information subject is required, and the embodiments also need to be implemented with the authorization and consent of the object.

[0041] The embodiments of this application will now be described in further detail with reference to the accompanying drawings. Example

[0042] This application provides an ECU MOS transistor protection circuit for responding to induced electromotive force generated when an external force pushes the car door. This circuit enables normal power supply to the car door motor under normal operating conditions and discharges the induced electromotive force when an external force pushes the car door, thereby protecting the ECU circuit.

[0043] For details, please refer to Figure 1 In this embodiment, a MOS control circuit consisting of an upper MOS transistor and a lower MOS transistor is used to control the motor. Both the upper and lower MOS transistors are NMOS transistors. More specifically, the motor includes a negative MOTOR- port and a positive MOTOR+ port. The MOTOR- port is connected to the negative MOS control circuit Q403, and the MOTOR+ port is connected to the positive MOS control circuit Q402. The MOTOR- port and the MOTOR+ port are connected through a coupling capacitor C407.

[0044] For the negative MOS control circuit Q403, the gate of the upper MOS transistor is connected to the GH1 pin of the pre-driver chip, the gate of the lower MOS transistor is connected to the GL1 pin of the pre-driver chip, the source of the upper MOS transistor and the drain of the lower MOS transistor are interconnected and connected to the MOTOR- port, the drain of the upper MOS transistor is connected to the DOOR1_CUR- node and connected to the VS node through resistor R401, and the source of the lower MOS transistor is grounded.

[0045] For the negative MOS control circuit Q403, the gate of the upper MOS transistor is connected to the GH1 pin of the pre-driver chip, the gate of the lower MOS transistor is connected to the GL1 pin of the pre-driver chip, the source of the upper MOS transistor and the drain of the lower MOS transistor are interconnected and connected to the MOTOR- port, the drain of the upper MOS transistor is connected to the DOOR1_CUR- node and connected to the VS node through resistor R401, and the source of the lower MOS transistor is grounded.

[0046] For the positive MOS control circuit Q402, the gate of the upper MOS transistor is connected to the GH2 pin of the pre-driver chip, the gate of the lower MOS transistor is connected to the GL2 pin of the pre-driver chip, the source of the upper MOS transistor and the drain of the lower MOS transistor are interconnected and connected to the MOTOR+ port, the drain of the upper MOS transistor is connected to the DOOR1_CUR- node and connected to the VS node through resistor R402, and the source of the lower MOS transistor is grounded.

[0047] The VS node and the DOOR1_CUR- node are the monitoring and output nodes for the induced electromotive force signal.

[0048] Under normal operating conditions, the pre-driver chip outputs an upper potential control signal through pins GH1 and GH2, controlling the upper MOSFETs on both sides to conduct (the upper MOSFET on one side and the lower MOSFET on the opposite side are switched on and off simultaneously). At this time, the control power supply VBAT_POWER1 supplies power to the motor normally through the VS node and the upper MOSFETs. However, when the pre-driver chip detects an induced electromotive force (EMF) generated in the motor due to the door being pushed by an external force at the VS node and DOOR1_CUR- node, it outputs a lower potential control signal through pins GL1 and GL2, controlling the lower MOSFET to conduct and dissipate the induced EMF from the motor. The upper and lower MOSFETs do not conduct simultaneously to avoid short circuits. The two MOSFET control circuits with positive and negative terminals enable bidirectional drive and speed regulation of the motor.

[0049] Please see Figure 2 The CSIP1 pin of the pre-driver chip is connected to the VS node, and the CSIN1 pin is connected to the DOOR1_CUR- node. The pre-driver chip obtains the differential chip select signal through the CSIP1 and CSIN1 pins. By calculating the voltage difference between the two signals (CSIP1 - CSIN1), it determines whether an induced electromotive force signal exists. This can eliminate the influence of common-mode noise, improve the anti-interference capability of obtaining the induced electromotive force signal, and is suitable for high-speed transmission scenarios with multiple nodes.

[0050] The GH1 and GL1 pins of the pre-driver chip are connected to the gates of the upper and lower MOSFETs of the negative MOSFET control circuit Q403, respectively. The SH1 pin is used for voltage detection and protection. Similarly, the GH2 and GL2 pins of the pre-driver chip are connected to the gates of the upper and lower MOSFETs of the positive MOSFET control circuit Q402, respectively. The SH2 pin is also used for voltage detection and protection. The pre-driver chip controls the upper and lower MOSFETs of the negative MOSFET control circuit Q403 via GH1 and GL1, and controls the upper and lower MOSFETs of the positive MOSFET control circuit Q402 via GH2 and GL2. Dead time intervals must be inserted between the outputs of GH1 and GL1, and between the outputs of GH2 and GL2, to prevent simultaneous conduction and avoid short circuits in the upper or lower MOSFETs.

[0051] The Vg pin of the pre-driver chip is connected to the VS node. The CP pin of the pre-driver chip outputs a timing level signal based on the induced electromotive force (EMF) signal obtained from the VS node, combined with the induced EMF verification signals from the CSIP1 and CSIN1 pins. A capacitor C414 is placed between the Vg pin and the CP pin. When an induced EMF exists, the CP pin outputs a high level; when no induced EMF exists, the CP pin outputs a low level.

[0052] Please see Figure 3The timing level signal output from the CP pin of the pre-driver chip is input to the timing control circuit. The timing control circuit includes a timing control MOSFET Q400, which is an NMOS transistor. The gate of the timing control MOSFET Q400 is connected to the CP pin via a pull-up resistor R405; the drain of the timing control MOSFET is connected to the control power supply VBAT_POWER1; and the source of the timing control MOSFET is connected to the VS node. The control power supply VBAT_POWER1 is grounded through a filter circuit consisting of filter capacitors C402, C403, and C404. The gate of the timing control MOSFET Q400 is grounded through a filter capacitor C408.

[0053] Furthermore, the timing control circuit includes a transistor Q401, which is an NPN transistor. The base of transistor Q401 is grounded through resistor R406 and connected to one end of resistor R641. The emitter of transistor Q401 is connected to the anode of diode D401 and the other end of resistor R641. The collector of transistor Q401 is connected to the gate of timing control MOSFET Q400, and is connected to the cathode of diode D400 and one end of resistor R404. The cathode of diode D401, the other end of resistor R404, and the anode of diode D400 are all connected to a common node connected to the control power supply VBAT_POWER1.

[0054] When the timing level signal output from the CP pin is high, transistor Q401 is turned on, causing the gate of the timing control MOSFET Q400 to be pulled down to a low level through diode D401. At this time, the timing control MOSFET Q400 is turned off, cutting off the power supply from the control power supply VBAT_POWER1 to the VS node. When the timing level signal output from the CP pin is low, transistor Q401 is turned off, causing the gate of the timing control MOSFET Q400 to be pulled up to the voltage of the control power supply VBAT_POWER1 by the pull-up resistor R405. At this time, the timing control MOSFET Q400 is turned on, and the control power supply VBAT_POWER1 supplies power to the VS node. By controlling the power supply from VBAT_POWER1 to the VS node based on the timing level signal output from the induced electromotive force signal, the power supply from VBAT_POWER1 to the VS node is disconnected when the induced electromotive force is detected, further protecting the ECU circuit. In this configuration, diode D401 conducts in the forward direction when transistor Q401 is on, pulling down the gate voltage of the timing control MOSFET Q400 to the clamping voltage to ensure reliable turn-off and prevent reverse current from forming due to gate charge. D400 and R404 enable rapid discharge of residual gate charge in the timing control MOSFET Q400, accelerating its turn-off. R404 provides current limiting protection and suppresses oscillation.

[0055] Furthermore, the control power supply VBAT_POWER1 is connected via a logic control switch group consisting of switches S1, S2, and S3. This logic switch group is connected to the control chip to achieve logic control of the door motor. By combining logic control switches, various strategies and combinations of strategies can be implemented for the control power supply VBAT_POWER1 to supply power to the motor. The structural form of switches S1, S2, and S3 in the figure is only an illustration; appropriate logic circuits can be used to control the power supply in practice.

[0056] Please see Figure 4 Following the above embodiments, this application uses an SBC chip to power the pre-driver chip. The control power supply VBAT_POWER1 is converted to 12V voltage via a voltage regulator circuit and connected to the VSHS_12V node input to the SBC chip. The VCC1 pin of the SBC chip outputs a voltage of VCC1_5V, which provides a stable 5V power supply to the pre-driver chip via the VDD pin of the pre-driver chip.

[0057] Unless otherwise stated, pins not explicitly described in the circuit diagrams of this application (such as power supply pin VCC, ground pin GND, enable pin EN, etc.) are connected in accordance with the conventional methods used by those skilled in the art; for pins in the circuit diagram used by the chip to implement other functions, the specific connection circuits are not shown in the diagrams. The above connections do not constitute a limitation on the technical solution of this invention. Passive devices such as decoupling capacitors and pull-up / pull-down resistors not explicitly described in the diagrams follow the general specifications of electronic circuit design (such as IEEE standards), and the specific parameters can be adjusted according to the actual application scenario.

[0058] Those skilled in the art will understand that Figures 1 to 4 The structures shown are merely the circuit devices related to the present application and do not constitute a limitation on the electronic devices on which the present application is applied. Specific circuit devices may include more or fewer components than those shown in the figures, or combine certain components, or have different component arrangements to achieve the same function. Example

[0059] Please see Figure 5 An embodiment of this application provides an ECU MOS transistor control method for responding to induced electromotive force generated when an external force pushes a car door, specifically including the following steps:

[0060] S1, the pre-driver chip monitors whether there is an induced electromotive force on the drain side of the MOS transistor.

[0061] S2, the pre-driver chip sends MOS circuit control signals and timing level signals based on the monitored induced electromotive force signal.

[0062] S31, under normal operating conditions, without an induced electromotive force signal, the pre-driver chip outputs a low-level timing signal, and the timing control MOS transistor is turned on; the control power supply is powered based on the logic control of the logic switch group.

[0063] S32, the pre-driver chip sends an upper potential control signal to the MOS control circuit, the upper MOS transistor is on, the lower MOS transistor is open, and the control power supply supplies power to the motor through the upper MOS transistor.

[0064] S41: When the pre-driver chip detects an induced electromotive force signal on the drain side of the MOS transistor, it outputs a high-level timing signal to turn off the MOS transistor and stop the power supply.

[0065] S42, the pre-driver chip sends a lower potential control signal to the MOS control circuit, the upper MOS transistor is open and the lower MOS transistor is closed, thus discharging the induced electromotive force of the motor.

[0066] It should be understood that the sequence number of each step in the above embodiments does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application. Example

[0067] A microcontroller for a car door control circuit according to an embodiment of this application includes a processor and a memory, wherein the memory contains computer-readable instructions adapted to be loaded by the processor and to execute the steps of the control method described above.

[0068] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included within the protection scope of the present invention.

Claims

1. An ECU MOS transistor protection circuit for responding to induced electromotive force generated by external force pushing a car door, comprising a motor driving the car door and a control circuit for controlling the motor, characterized in that, The control circuit includes a MOS control circuit, a pre-driver chip, and a timing control circuit; The MOS control circuit includes an upper MOS transistor and a lower MOS transistor. The MOS control circuit is connected to the pre-driver chip and receives control signals from the pre-driver chip to control the motor. Under normal operating conditions, the pre-driver chip controls the upper MOS transistor to conduct through the upper potential, thereby controlling the motor to work normally. Under the condition of induced electromotive force, the pre-drive chip controls the lower MOS transistor to conduct through the lower potential, thereby controlling the motor to discharge the induced electromotive force. The pre-driver chip reads the induced electromotive force signal of the MOS upper transistor, determines whether there is an induced electromotive force, and outputs a timing level signal based on the induced electromotive force. A timing level signal is input to the timing control circuit. The control power supply is connected to the MOS control circuit through the timing control circuit. The timing control circuit intermittently switches the control power supply and the MOS control circuit according to the timing level signal to control the power supply to the motor. For the MOS control circuit, the upper MOS transistor and the lower MOS transistor are NMOS transistors. The gate of the upper MOS transistor is connected to the GH pin of the pre-driver chip, and the gate of the lower MOS transistor is connected to the GL pin of the pre-driver chip. The source of the upper MOS transistor and the drain of the lower MOS transistor are interconnected and connected to the motor. The drain of the upper MOS transistor is connected to the DOOR1_CUR- node and the VS node, respectively, and the source of the lower MOS transistor is grounded. The protection circuit also includes a control power supply VBAT_POWER1, a timing control circuit, the CP pin of the pre-driver chip, and the VS node. The CP pin of the pre-driver chip is connected to the input of the timing control circuit. The control power supply VBAT_POWER1 is connected to the timing control circuit. The timing control circuit includes a timing control MOSFET Q400. The gate of the timing control MOSFET Q400 is connected to the CP pin through a pull-up resistor R405 and is connected to the control power supply VBAT_POWER1. The drain of the timing control MOSFET Q400 is connected to the control power supply VBAT_POWER1. The source of the timing control MOSFET Q400 is connected to the VS node. The DOOR1_CUR node acquires the drain voltage fluctuation signal of the MOS upper transistor; The CSIP pin of the pre-driver chip is connected to the VS node, and the CSIN pin of the pre-driver chip is connected to the DOOR1_CUR- node. The pre-driver chip obtains the induced electromotive force signal of the MOS upper transistor based on the voltage differential chip select signal of the VS node and the DOOR1_CUR- node.

2. The ECU MOS transistor protection circuit for responding to induced electromotive force generated by external force pushing the car door, as described in claim 1, is characterized in that... The MOS control circuit includes a negative MOS control circuit and a positive MOS control circuit with identical structures. The negative MOS control circuit is connected to the negative terminal of the motor, and the positive MOS control circuit is connected to the positive terminal of the motor. The gate of the upper MOS transistor of the negative MOS control circuit is connected to the GH1 pin of the pre-driver chip, and the gate of the lower MOS transistor is connected to the GL1 pin of the pre-driver chip. The gate of the upper MOS transistor of the positive MOS control circuit is connected to the GH2 pin of the pre-driver chip, and the gate of the lower MOS transistor is connected to the GL2 pin of the pre-driver chip.

3. The ECU MOS transistor protection circuit for responding to induced electromotive force generated by external force pushing the car door, as described in claim 1, is characterized in that... The Vg pin of the pre-driver chip is connected to the VS node, and the CP pin of the pre-driver chip outputs a timing level signal based on the signal obtained from the VS node.

4. The ECU MOS transistor protection circuit for responding to induced electromotive force generated by external force pushing the car door, as described in claim 1, is characterized in that... The timing control circuit includes a timing control MOS transistor, which is an NMOS transistor. The gate of the timing control MOS transistor is connected to the CP pin. The drain of the timing control MOS transistor is connected to the control power supply, and the source of the timing control MOS transistor is connected to the VS node.

5. The ECU MOS transistor protection circuit for responding to induced electromotive force generated by external force pushing the car door as described in claim 4, characterized in that, The CP pin is connected to the gate of the timing control MOS transistor through a transistor signal control circuit, which uses an NPN transistor.

6. The ECU MOS transistor protection circuit for responding to induced electromotive force generated by external force pushing the car door, as described in claim 4, is characterized in that... The control power supply is connected to the drain of the timing control MOS transistor via a logic control switch group.

7. The ECU MOS transistor protection circuit for responding to induced electromotive force generated by external force pushing the car door as described in claim 1, characterized in that, The control circuit also includes an SBC chip. The control power supply is connected to the SBC chip through a voltage regulator circuit, and the SBC chip supplies power to the pre-driver chip.

8. A method for controlling an ECU MOS transistor to respond to an induced electromotive force generated when an external force pushes a vehicle door, employing the ECU MOS transistor protection circuit as described in claim 1, characterized in that... Includes the following steps: The pre-driver chip monitors whether there is an induced electromotive force on the drain side of the MOS transistor. Under normal operating conditions, the MOS control circuit receives the upper potential control signal from the pre-driver chip, the upper MOS transistor is on, the lower MOS transistor is open, and the control power supply supplies power to the motor through the upper MOS transistor. When the pre-driver chip detects an induced electromotive force on the drain side of the MOS upper transistor, it sends a lower potential control signal to the MOS control circuit to open the MOS upper transistor and open the MOS lower transistor, thereby discharging the induced electromotive force of the motor. The pre-driver chip simultaneously sends a timing level signal based on the monitored induced electromotive force signal. The timing level signal is input to the timing control circuit to control the output of the control power supply to the MOS upper transistor. When an induced electromotive force is present, the power supply to the MOS upper transistor is stopped.

9. A microcontroller for a vehicle door control circuit, comprising a processor and a memory, characterized in that, The memory stores computer-readable instructions adapted to be loaded by the processor and to execute the steps of the control method as claimed in claim 8.

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