Coating equipment

Abstract

The invention relates to the technical field of photovoltaics and semiconductors, in particular to coating equipment, which comprises a reaction cavity provided with a reaction chamber which is internally provided with a plurality of atmosphere areas, and the plurality of atmosphere areas are arranged around the center of the reaction chamber at intervals; the cover body is arranged above the reaction cavity and used for closing the reaction cavity to form a reaction chamber, and a plurality of air inlet holes are formed in the cover body; the silicon wafer carrier plate is rotatably arranged in the reaction cavity, and the silicon wafer carrier plate is used for bearing a silicon wafer to be coated; the gas uniformizing assembly is arranged on the cover body and is provided with a first surface and a second surface which are opposite to each other, the first surface is connected with the cover body, the second surface faces the silicon wafer carrier plate, the first surface is provided with a geometric center and is provided with a plurality of gas uniformizing areas which are arranged around the geometric center at intervals, and each gas uniformizing area is provided with a gas uniformizing structure; each gas uniformizing structure penetrates through the first face and the second face, the multiple gas inlet holes are communicated with the corresponding gas uniformizing structures, and the gas uniformizing areas are in one-to-one correspondence with the atmosphere areas.

Description

Technical Field

[0001] This application relates to the fields of photovoltaic and semiconductor technology, and in particular to a coating device. Background Technology

[0002] In the photovoltaic cell production process, coating equipment enables silicon wafers to undergo coating processes within a furnace, and is widely used in industries such as integrated circuits, power electronics, and solar cell production. In semiconductor and solar cell manufacturing equipment, coating process equipment is included in various systems such as oxidation equipment, PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment, cross-sectional passivation equipment, LPCVD (Low-Pressure Chemical Vapor Deposition) equipment, ALD (Atomic Layer Deposition) equipment, and semiconductor equipment.

[0003] Currently, coating equipment uses different reactive gases sequentially to perform reaction coating. Taking the ALD process for solar cells as an example, a coating is applied to the surface of photovoltaic cells to protect their lifespan and improve their light conversion efficiency. The process gases are introduced into the reaction chamber in sequence, with inert gas needed for purging in between. This results in a long coating time, low production efficiency, and a large equipment footprint, failing to meet the increasingly stringent quality requirements of modern batteries. Summary of the Invention

[0004] In view of this, embodiments of this application provide a coating equipment that can shorten the coating time and improve production efficiency.

[0005] According to the inventive concept of a first aspect of the present invention, a coating apparatus is provided, comprising: a reaction chamber having a reaction chamber, wherein a plurality of atmosphere zones are disposed within the reaction chamber and the plurality of atmosphere zones are arranged at intervals around the center of the reaction chamber; a cover disposed above the reaction chamber for closing the reaction chamber to form the reaction chamber, the cover having a plurality of air inlets; a silicon wafer carrier rotatably disposed within the reaction chamber for supporting a silicon wafer to be coated; and a gas equalization assembly disposed on the cover, the gas equalization assembly having opposing first and second surfaces, the gas equalization assembly being connected to the cover, the second surface facing the silicon wafer carrier, and the first surface having a geometric center. The first surface is provided with a plurality of gas equalization zones spaced apart around the geometric center. Each gas equalization zone is provided with a gas equalization structure, and each gas equalization structure penetrates the first surface and the second surface. The plurality of air inlets are connected to the corresponding gas equalization structures. The gas equalization zones correspond one-to-one with the atmosphere zones. Among the gas equalization structures of adjacent gas equalization zones, one gas equalization structure is used to evenly distribute the precursor gas and allow the precursor gas to enter the corresponding atmosphere zone, and the gas equalization structure of the other gas equalization zone is used to evenly distribute the isolation gas and allow the isolation gas to enter the corresponding atmosphere zone. The silicon wafer can pass through the plurality of atmosphere zones sequentially and repeatedly under the rotation of the silicon wafer carrier.

[0006] In conjunction with the first aspect of the invention, in some embodiments, the reaction chamber includes a bottom wall and a side wall extending away from the bottom plate along the edge of the bottom wall, wherein a plurality of vacuum holes are spaced apart on the side wall; the height of the vacuum holes in the vertical direction is less than the height of the silicon wafer carrier in the vertical direction, wherein each vacuum hole is located below the corresponding atmosphere zone.

[0007] In conjunction with the first aspect of the present invention, in some embodiments, the gas equalization structure is a gas equalization slit; wherein, the gas equalization area is recessed inward to form a gas collecting groove, and the bottom of the gas collecting groove is provided with the gas equalization slit extending from the geometric center to the edge of the first surface; one gas equalization slit of the gas equalization area is used to evenly disperse the precursor gas and allow the precursor gas to enter the corresponding atmosphere area to form a precursor gas cluster, and the gas equalization slit of the other gas equalization area is used to evenly disperse the isolation gas and allow the isolation gas to enter the corresponding atmosphere area to form an isolation gas cluster.

[0008] In conjunction with the first aspect of the present invention, in some embodiments, the edge portion of the first surface abuts against the lower surface of the cover, the bottom of the gas collecting groove and the lower surface of the cover together form a uniform gas chamber; the air inlet is connected to the uniform gas chamber to allow the precursor gas or the isolation gas to enter the uniform gas chamber.

[0009] In conjunction with the first aspect of the present invention, in some embodiments, an isolation zone is provided adjacent to the gas equalization zone on the first surface, and the gas equalization assembly further includes a sealing gasket disposed in the isolation zone for isolating the precursor gas or isolation gas in the gas equalization chamber.

[0010] In conjunction with the first aspect of the present invention, in some embodiments, in two adjacent gas equalization zones, one of the gas equalization zones is a precursor gas equalization zone and the other is an isolation gas equalization zone; the isolation gas equalization zone is provided with a plurality of gas equalization slits, the plurality of gas equalization slits being spaced apart around the geometric center in the isolation gas equalization zone; the gap of the gas equalization slit in the isolation gas equalization zone is larger than the gap of the gas equalization slit in the precursor gas equalization zone.

[0011] In conjunction with the first aspect of the present invention, in some embodiments, each of the gas equalization zones is recessed inward to form a gas collecting groove, and in two adjacent gas equalization zones, one of the gas equalization zones is a precursor gas equalization zone and the other of the gas equalization zones is an isolation gas equalization zone; the gas collecting groove of the precursor gas equalization zone is fan-shaped and the gas collecting groove of the isolation gas equalization zone is strip-shaped.

[0012] In conjunction with the first aspect of the invention, in some embodiments, the coating apparatus further includes a heating assembly disposed on the bottom wall of the cover and / or the reaction chamber.

[0013] In conjunction with the first aspect of the invention, in some embodiments, the drive assembly includes: a motor; a drive shaft, one end of which is connected to the silicon wafer carrier and the other end of which is slidably and sealed through the base plate; and a coupling connected to the motor and the drive shaft, respectively.

[0014] In conjunction with the first aspect of the invention, in some embodiments, the coating apparatus further includes: a lifting structure connected to the cover for lifting the cover.

[0015] In conjunction with the first aspect of the present invention, in some embodiments, the plurality of atmosphere zones are respectively a first precursor atmosphere zone, a first isolation gas atmosphere zone, a second precursor atmosphere zone, and a second isolation gas atmosphere zone; the plurality of air inlets are respectively a first precursor air inlet, a first isolation gas inlet, a second precursor air inlet, and a second isolation gas inlet; the plurality of gas equalization zones include a first precursor gas equalization zone, a first isolation gas equalization zone, a second precursor gas equalization zone, and a second isolation gas equalization zone; the precursor gas and the isolation gas respectively enter the first precursor gas equalization zone, the first isolation gas equalization zone, the second precursor gas equalization zone, and the second isolation gas equalization zone from the corresponding first precursor air inlet, the first isolation gas inlet, the second precursor air inlet, and the second isolation gas inlet, and enter the first precursor atmosphere zone, the first isolation gas atmosphere zone, the second precursor atmosphere zone, and the second isolation gas atmosphere zone through the corresponding gas equalization structure.

[0016] According to the coating equipment of the present invention, a reaction chamber is formed by a reaction chamber and a cover. A gas equalization zone corresponding to the atmosphere zone in the reaction chamber is set on the first surface of the gas equalization component. Multiple precursor gases and isolation gases are delivered to the gas equalization zone through multiple air inlets. After being evenly dispersed by the gas structure, they enter the atmosphere zone. With the help of the silicon wafer carrier, the silicon wafer rotates so that the silicon wafer passes through multiple atmosphere zones in sequence, thereby completing the coating. In the technical solution of this embodiment, the precursor gas is continuously input and does not need to be purged with inert gas after interruption, which improves production efficiency. Attached Figure Description

[0017] The above and other objects, features, and advantages of this application will become more apparent from the more detailed description of the embodiments of this application in conjunction with the accompanying drawings. The drawings are provided to further illustrate the embodiments of this application and form part of the specification. They are used together with the embodiments of this application to explain this application and do not constitute a limitation thereof. In the drawings, the same reference numerals generally represent the same components or steps.

[0018] Figure 1 The image shown is a perspective view of a coating apparatus provided in an embodiment of this application.

[0019] Figure 2 The image shown is a partial front view of a coating apparatus provided in an embodiment of this application.

[0020] Figure 3 The image shown is a cross-sectional view of a partial structure of a coating apparatus provided in an embodiment of this application.

[0021] Figure 4 The image shown is a top view of the gas equalization component of a coating apparatus provided in an embodiment of this application.

[0022] Figure 5The image shown is a bottom view of the gas equalization component and cover of a coating apparatus provided in an embodiment of this application.

[0023] Figure 6 As shown Figure 5 An enlarged schematic diagram of region A in the middle.

[0024] Figure 7 The image shown is a perspective view of a portion of the structure of a coating apparatus provided in an embodiment of this application.

[0025] Figure 8 The image shown is a perspective view of a coating apparatus provided in one embodiment of this application from another angle.

[0026] Figure label: 1. Reaction chamber; 101. Bottom wall; 102. Side wall; 103. Vacuum extraction hole; 2. Silicon wafer carrier; 3. Silicon wafer; 4. Gas equalization assembly; 401. First surface; 402. Second surface; 5. Gas equalization slit; 6. Air inlet; 601. First precursor air inlet; 602. First isolation gas inlet; 603. Second precursor air inlet; 604. Second isolation gas inlet; 7. Cover; 8. Gas collection groove; 9. Gas equalization chamber; 10. Frame; 11. Air inlet pipe; 12. Evacuation pipe; 13. Thermocouple; 4. Guide post; 15. Handle; 16. Motor; 17. Drive shaft; 18. Coupling; 19. Mounting hole; 20. Heating assembly; 21. Protective cover; 22. Sealing gasket; C0. Geometric center; A1. First precursor gas equalization zone; A2. First isolation gas equalization zone; A3. Second precursor gas equalization zone; A4. Second isolation gas equalization zone; A1'. First precursor atmosphere zone; A2'. First isolation gas atmosphere zone; A3'. Second precursor atmosphere zone; A4'. Second isolation gas atmosphere zone; B. Isolation zone. Detailed Implementation

[0027] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0028] Figure 1 The image shown is a perspective view of a coating apparatus provided in an embodiment of this application. Figure 2 The image shown is a partial front view of a coating apparatus provided in an embodiment of this application. Figure 3 The figure shown is a cross-sectional view of a partial structure of a coating equipment provided in an embodiment of this application. Figure 4 The image shown is a top view of the gas equalization component of a coating apparatus provided in an embodiment of this application. Figure 5The image shown is a bottom view of the gas equalization component and cover of a coating apparatus according to an embodiment of this application. Figure 6 As shown Figure 5 Enlarged diagram of region A in the middle. Figure 7 The image shown is a perspective view of a portion of the structure of a coating apparatus provided in an embodiment of this application. Figure 8 The image shown is a perspective view of a coating apparatus provided in one embodiment of this application from another angle.

[0029] To address the technical problems in related technologies, according to the inventive concept of the first aspect of the present invention, a coating apparatus is provided, such as... Figures 1 to 8 As shown, the coating equipment includes: a reaction chamber 1 having a reaction chamber containing multiple atmosphere zones arranged at intervals around the center of the reaction chamber; a cover 7 disposed above the reaction chamber 1 for closing the reaction chamber 1 to form the reaction chamber, the cover 7 having multiple air inlets 6; a silicon wafer carrier 2 rotatably disposed within the reaction chamber 1 for supporting the silicon wafer 3 to be coated; and a gas equalization assembly 4 disposed on the cover 7, the gas equalization assembly 4 having a first surface 401 and a second surface 402 facing each other, the gas equalization assembly 4 being connected to the cover 7, the second surface 402 facing the silicon wafer carrier 2, and the first surface 401 having a geometric center. On the first surface 401, multiple gas equalization zones are arranged at intervals around the geometric center C0. Each gas equalization zone is provided with a gas equalization structure, and each gas equalization structure penetrates the first surface 401 and the second surface 402. Multiple air inlets 6 are connected to the corresponding gas equalization structures, and the gas equalization zones correspond one-to-one with the atmosphere zones. Among the gas equalization structures of adjacent gas equalization zones, one gas equalization structure is used to evenly distribute the precursor gas and allow the precursor gas to enter the corresponding atmosphere zone, and the other gas equalization structure is used to evenly distribute the isolation gas and allow the isolation gas to enter the corresponding atmosphere zone. The silicon wafer 3 can pass through multiple atmosphere zones in sequence and repeatedly under the rotation of the silicon wafer carrier 2.

[0030] In this embodiment, a reaction chamber is formed by the reaction chamber 1 and the cover 7. A gas equalization zone corresponding to the atmosphere zone in the reaction chamber is set on the first surface 401 of the gas equalization component 4. Multiple precursor gases and isolation gases are delivered to the gas equalization zone through multiple air inlets 6. After being evenly dispersed by the gas structure, they enter the atmosphere zone. With the help of the silicon wafer carrier 2, the silicon wafer 3 is rotated so that the silicon wafer 3 passes through multiple atmosphere zones in sequence, thereby completing the coating. In the technical solution of this embodiment, the precursor gas is continuously input and does not need to be purged with inert gas after interruption, which improves production efficiency.

[0031] In conjunction with the first aspect of the present invention, in some embodiments, by changing the gas introduction method, various reactive gases required for coating (e.g., precursor gas A, precursor gas B, precursor gas C, ...) are simultaneously introduced into the reaction chamber 1. Different reactive gases (precursors) are separated by an isolation gas (a gas that does not react with any of the reactive gases or the silicon wafer 3, generally nitrogen or an inert gas) to create a gas curtain, thus isolating precursor gas A, precursor gas B, precursor gas C, ... etc., so that each precursor gas gathers in a different and independent space. The silicon wafer carrier 2 drives the silicon wafer 3 to rotate, and the upper surface of the silicon wafer 3 passes through the spaces where each precursor gas is located in turn, completing the contact and reaction between the silicon wafer 3 and precursor gas A, precursor gas B, ... respectively. As the silicon wafer 3 rotates continuously, the reaction continues. The technical solution of the embodiments of this application does not require the use of intermittent input of precursor gas. During the intermittent period, inert gas is used for purging, which shortens the coating process time and improves production efficiency.

[0032] In conjunction with the first aspect of the invention, in some embodiments, such as Figure 7 As shown, the reaction chamber 1 is divided into four regions along a clockwise direction: a first precursor atmosphere region A1', a first isolation atmosphere region A2', a second precursor atmosphere region A3', and a second isolation atmosphere region A4'. Figure 4 The gas equalization component 4, with its first surface 401 centered on geometric center C0, is divided into four regions clockwise: a first precursor gas equalization region A1, a first isolation gas equalization region A2, a second precursor gas equalization region A3, and a second isolation gas equalization region A4. The first precursor gas equalization region A1 corresponds to the first precursor atmosphere region A1'; the first isolation gas atmosphere region A2' corresponds to the first isolation gas equalization region A2; the second precursor atmosphere region A3' corresponds to the second precursor gas equalization region A3; and the second isolation gas atmosphere region A4' corresponds to the second isolation gas equalization region A4. Optionally, an isolation region B is provided between adjacent regions. Figure 5 and Figure 6 As shown, the cover 7 has a first precursor air inlet 601 (corresponding to the first precursor air equalization zone A1), a first isolation air inlet 602 (corresponding to the first isolation air equalization zone A2), a second precursor air inlet 603 (corresponding to the second precursor air equalization zone A3), and a second isolation air inlet 604 (corresponding to the second isolation air equalization zone A4).

[0033] Specifically, the cover 7 has four air inlets, namely, a first precursor air inlet 601, a first isolation gas air inlet 602, a second precursor air inlet 603, and a second isolation gas air inlet 604. The first precursor air inlet 601 and the second precursor air inlet 603 are used to input precursor gas A and precursor gas B, respectively. The first isolation gas air inlet 602 and the second isolation gas air inlet 604 are used to input isolation gas (such as nitrogen or inert gas). Based on the presence of the vacuum hole 103, precursor gas A and precursor gas B diffuse and converge in the first precursor gas uniform zone A1 and the second precursor gas uniform zone A3, respectively, and form a gas mass with a roughly stable shape and range, that is, a precursor gas mass. Between the first precursor gas homogenization zone A1 and the second precursor gas homogenization zone A3, there are a first isolation gas homogenization zone A2 and a second isolation gas homogenization zone A4. The isolation gas diffuses and converges in the first isolation gas homogenization zone A2 and the second isolation gas homogenization zone A4. Due to the presence of the vacuum hole, the isolation gas diffuses and converges in the first isolation gas homogenization zone A2 and the second isolation gas homogenization zone A4 respectively, forming gas clusters with roughly stable shapes and ranges, i.e., isolation gas clusters. The two isolation gas clusters are located between the gas cluster formed by precursor gas A and the gas cluster formed by precursor gas B, respectively, to separate the two precursor gases and prevent them from mixing and reacting.

[0034] During the rotation of silicon wafer 3, when a certain area on the upper surface (not specifically defined, any area on the upper surface of silicon wafer 3) passes through the first precursor gas equalization zone A1, some precursor gas A adheres to this area. When this area rotates to the first isolation gas equalization zone A2, the isolation gas isolates the precursor gas A and blows away the excess precursor gas A, leaving only a preset amount of precursor gas adsorbed on the silicon wafer surface, thus achieving precise control of the reaction process. When this area rotates to the second precursor gas equalization zone A3, the precursor gas A adsorbed on the silicon wafer surface reacts with the precursor gas B in the precursor gas B cluster in this area to form the required film layer on the silicon wafer surface. When this area rotates to the second isolation gas equalization zone A4, the isolation gas isolates the precursor gas B and blows away the excess precursor gas B. When this area rotates to the first precursor gas equalization zone A1, the above process is repeated, thereby forming the required film layer on the silicon wafer surface and completing the coating.

[0035] Optionally, the region rotates to the second precursor gas equalization zone A3, where the precursor gas A adsorbed on the silicon wafer surface reacts with the precursor gas B in the precursor gas B cluster in this zone to form the desired film layer on the silicon wafer surface, and some of the precursor gas B is adsorbed on the newly formed film layer. When the region rotates to the second isolation gas equalization zone A4, the isolation gas isolates the precursor gas B and blows away the excess precursor gas B. The region rotates to the first precursor gas equalization zone A1, where the precursor gas B adsorbed on the film layer surface reacts with the precursor gas A in the precursor gas A cluster to form the desired film layer, and some of the precursor gas A is adsorbed on the newly formed film layer. The above process is repeated to form the desired film layer on the silicon wafer surface, thus completing the coating.

[0036] In conjunction with the first aspect of the invention, in some embodiments, the reaction chamber 1 includes a bottom wall 101 and a side wall 102 extending away from the bottom plate along the edge of the bottom wall. A plurality of vacuum holes 103 are spaced apart on the side wall 102. The height of the vacuum holes 103 in the vertical direction is less than the height of the silicon wafer carrier 2 in the vertical direction. Each vacuum hole 103 is located below the corresponding atmosphere zone.

[0037] In conjunction with the first aspect of the present invention, in some embodiments, the gas equalization structure is a gas equalization slit 5 or a gas equalization hole; wherein, the gas equalization area is recessed inward to form a gas collecting groove 8, and the bottom of the gas collecting groove 8 is provided with a gas equalization slit extending from the geometric center C0 to the edge of the first surface; the gas equalization slit 5 of one gas equalization area is used to evenly disperse the precursor gas and allow the precursor gas to enter the corresponding atmosphere area to form a precursor gas mass, and the gas equalization slit 5 of the other gas equalization area is used to evenly disperse the isolation gas and allow the isolation gas to enter the corresponding atmosphere area to form an isolation gas mass.

[0038] In this embodiment, the vacuum hole 103 provided on the side wall 102 works in conjunction with the gas equalization slit 5 to form a negative pressure traction effect. Specifically, the vacuum hole 103 is located below the end of the gas equalization slit 5 away from the geometric center C0, so that the vacuum degree at the end of the gas equalization slit 5 is higher than that at the center (about 30%), which guides the gas to diffuse towards the edge to form a stable gas curtain. At the same time, it can also limit the diffusion range of the precursor gas or the isolation gas phase on both sides. By adjusting the flow rate of the precursor gas inlet and the isolation gas inlet, the diffusion range of the precursor gas (i.e., the shape of the precursor gas) and the diffusion range of the isolation gas (i.e., the shape of the isolation gas) can be controlled, thereby forming a dynamically stable gas mass.

[0039] In conjunction with the first aspect of the present invention, in some embodiments, the air inlet 6 is further positioned above the end of the gas equalization slit 5 near the geometric center C0. This helps the gas to diffuse evenly along the guiding direction of the gas equalization slit 5 after entering the reaction chamber 1. Combined with the vacuum hole 103 below the end away from the geometric center C0, the gas forms a more ideal airflow distribution, so that the entire reaction area can obtain a relatively uniform supply of precursor gas / isolation gas, avoiding situations where the local concentration is too high or too low, ensuring the stability and consistency of the reaction, as well as the isolation effect of the isolation gas.

[0040] In this embodiment, when the precursor gas inlet 6 is opened, the precursor gas enters the reaction chamber 1 through the inlet 6. Since the inlet 6 is located above the end of the gas equalization slit 5 near the geometric center C0, the precursor gas is guided by the gas equalization slit 5 after entering the chamber. The design of the gas equalization slit 5 allows the gas to flow along a specific path towards the reaction area. During this process, the precursor gas gradually diffuses and comes into contact with other substances (such as the upper surface of the silicon wafer 3) within the reaction chamber 1, undergoing a chemical reaction to generate the target product. Simultaneously, by controlling the gas flow rate and velocity of the precursor gas inlet 6, the concentration and distribution of the precursor gas within the reaction area can be adjusted, thereby achieving precise control of the reaction process. After the isolation gas inlet 6 is opened, the isolation gas enters the reaction chamber 1. The inlet 6, located above the end of the gas equalization slit 5 near the geometric center C0, allows the isolation gas to quickly form an airflow layer around the reaction area. The isolation gas flows along the direction of the gas equalization slit 5, forming a barrier between the reaction area and the external environment. This barrier gas layer can prevent different precursor gases from coming into contact with each other and reacting, thus ensuring the purity of the coating.

[0041] The vacuum hole 103 works in conjunction with the gas equalization slit 5 to form an effective airflow circulation. After the gas enters from the air inlet 6, it flows along a specific path to the vacuum hole 103, forming an orderly airflow circulation, which improves the gas utilization rate and reaction efficiency.

[0042] In conjunction with the first aspect of the present invention, in some embodiments, the edge portion of the first surface 401 abuts against the lower surface of the cover 7, and the bottom of the gas collecting groove 8 and the lower surface of the cover 7 together form a uniform air chamber 9; the air inlet 6 communicates with the uniform air chamber 9 to allow the precursor gas or the isolation gas to enter the uniform air chamber 9.

[0043] In conjunction with the first aspect of the present invention, in some embodiments, an isolation zone B is provided on the first surface 401 adjacent to the gas equalization zone, and the coating device further includes a sealing gasket 22, which is disposed in the isolation zone B for isolating the precursor gas or the isolation gas in the gas equalization chamber.

[0044] In this embodiment, by adding an isolation region B between adjacent gas equalization regions, and using a sealing gasket 22, each gas equalization chamber 9 is made independent of the others and does not affect each other. This prevents gas from entering other gas equalization chambers 9, thus preventing the precursor gas and / or isolation gas from mixing during the gas equalization stage, thereby reducing purity or causing a reaction that could lead to product contamination of the silicon wafer. Furthermore, the relatively sealed environment further improves the gas equalization effect of the gas equalization seam 5.

[0045] In conjunction with the first aspect of the present invention, in some embodiments, in two adjacent gas equalization zones, one gas equalization zone is a precursor gas equalization zone and the other gas equalization zone is an isolation gas equalization zone; the isolation gas equalization zone is provided with a plurality of gas equalization slits 5, which are spaced apart around the geometric center C0 in the isolation gas equalization zone; the gap of the gas equalization slits 5 in the isolation gas equalization zone is larger than the gap of the gas equalization slits 5 in the precursor gas equalization zone.

[0046] In this embodiment, by setting multiple gas equalization slits 5 within the isolation gas equalization zone, the gas is evenly dispersed over a larger area, thereby forming a larger volume of isolation gas mass. This ensures the isolation of the precursor gas in adjacent precursor gas equalization zones, preventing them from reacting. Increasing the slit width of the equalization slits 5 in the isolation gas equalization zone further improves the uniformity of the isolation gas mass and enhances its isolation effect. Furthermore, adjusting the inlet flow rate of the isolation gas, for example, by increasing its intake volume, ensures that the isolation gas forms a sufficiently concentrated isolation gas mass within a sufficiently large area.

[0047] In conjunction with the first aspect of the present invention, in some embodiments, each gas equalization zone is recessed inward to form a gas collecting groove 8, and in two adjacent gas equalization zones, one gas equalization zone is a precursor gas equalization zone and the other gas equalization zone is an isolation gas equalization zone; the gas collecting groove 8 of the precursor gas equalization zone is fan-shaped and the gas collecting groove 8 of the isolation gas equalization zone is strip-shaped.

[0048] In this embodiment, a roughly fan-shaped gas collecting groove 8, in conjunction with multiple gas equalization slits 5 formed within it, creates a roughly fan-shaped isolation gas cloud above the silicon wafer 3. This ensures that during the rotation of the silicon wafer 3, all areas except the corresponding area of ​​the precursor gas equalization zone are covered by this fan-shaped isolation gas cloud, thus guaranteeing its isolation effect. The strip-shaped gas collecting groove 8 within the precursor gas equalization zone, in conjunction with the gas equalization slits 5 formed within it, creates a "blade-like" strip-shaped precursor gas cloud above the silicon wafer. Combined with the rotation of the silicon wafer 3, this uniformly "coats" the precursor gas onto the surface of the silicon wafer 3, ensuring the uniformity of the coating and thereby improving product yield.

[0049] In conjunction with the first aspect of the invention, in some embodiments, the coating apparatus further includes a heating assembly 20 disposed on the bottom wall of the cover 7 and / or the reaction chamber 1.

[0050] In this embodiment, the heating component 20 disposed on the cover 7 can preheat the precursor gas and the isolation gas, thereby improving the controllability of the temperature in the coating reaction zone, and improving the reaction efficiency and coating efficiency; the heating component 20 disposed on the bottom wall of the reaction chamber 1 can maintain the temperature of the reaction zone, ensuring that the precursor gas A and precursor gas B participate in the reaction at a preset temperature. Optionally, the heating component 20 is a vortex thermal field.

[0051] In conjunction with the first aspect of the invention, in some embodiments, the drive assembly includes: a motor 16; a drive shaft 17, one end of which is connected to the silicon wafer carrier 2 and the other end of which is slidably and sealed through a base plate; and a coupling 18, which is connected to the motor 16 and the drive shaft 17 respectively.

[0052] In conjunction with the first aspect of the invention, in some embodiments, the coating apparatus further includes a frame 10, wherein a reaction chamber 1 is disposed on top of the frame 10, and a motor 16 is disposed inside the frame.

[0053] In this embodiment, motor 16 provides stable rotational power, ensuring that the silicon wafer carrier 2 rotates at a constant speed, thereby improving the uniformity of the coating. Drive shaft 17 transmits the rotational power of motor 16 to the silicon wafer carrier 2, while ensuring smooth and precise rotation. The sliding and sealed design of drive shaft 17 prevents gas leakage and ensures the sealing of reaction chamber 1. Coupling 18 connects motor 16 and drive shaft 17, serving to transmit torque and buffer vibration, reducing the impact of motor 16 vibration on the rotation of silicon wafer carrier 2, and improving the stability and reliability of the equipment. After motor 16 starts, it transmits rotational power to drive shaft 17 through coupling 18. Drive shaft 17 rotates, driving the silicon wafer carrier 2 connected to it to rotate. During rotation, the silicon wafer 3 comes into uniform contact with the reaction gas, achieving uniform coating. To further improve the stability and reliability of the equipment, a speed reducer can be installed between motor 16 and coupling 18 to reduce the rotational speed and increase torque, thereby better meeting process requirements.

[0054] In conjunction with the first aspect of the invention, in some embodiments, the coating apparatus further includes a lifting structure connected to the cover 7 for lifting the cover 7.

[0055] In conjunction with the first aspect of the present invention, in some embodiments, the lifting structure includes at least two guide posts 14, which are arranged vertically at intervals on the side wall 102; wherein, the cover 7 is provided with guide holes that match the guide posts 14 for guiding the cover 7 to cover the reaction chamber 1.

[0056] In this embodiment, the guide posts 14 and the cover 7 are designed to ensure that the cover 7 can be accurately and stably placed on the reaction chamber 1. The number of guide posts 14 is determined according to the size and shape of the equipment, typically two or more. The guide posts 14 are spaced vertically on the side wall 102 to ensure that the cover 7 remains horizontal during placement. The guide posts 14 are made of high-strength, corrosion-resistant materials, such as stainless steel or ceramic. These materials have excellent mechanical properties and corrosion resistance, and can maintain stable performance under high temperature and high pressure environments. The cover 7 has guide holes that match the guide posts 14, and the size and shape of the guide holes are adapted to the guide posts 14. During the placement of the cover 7, the guide posts 14 are inserted into the guide holes, guiding the cover 7 to be accurately and stably placed on the reaction chamber 1. A sealing design is used between the cover 7 and the reaction chamber 1 to ensure that no gas leakage occurs during the coating process. The sealing design is made of special materials, such as rubber or silicone (e.g., O-rings), which have good sealing performance and corrosion resistance.

[0057] In conjunction with the first aspect of the present invention, the lifting structure may further include a guide rail, a motor, or other structures to drive the cover 7 to move vertically; details will not be elaborated further here. Optionally, the cover 7 may also move vertically manually.

[0058] In the embodiments of this disclosure, unless otherwise specified, the connection can be a detachable connection using bolts, nuts, screws, clips, magnets, etc. In some connections where there is no particular requirement for a detachable fit, a non-detachable connection can be achieved through welding, bonding, etc.

[0059] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0060] The block diagrams of devices, apparatuses, devices, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the terms “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.

[0061] It should also be noted that in the apparatus, equipment, and methods of this application, the components or steps can be disassembled and / or recombined. These disassemblies and / or recombinations should be considered as equivalent solutions of this application.

[0062] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0063] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

Claims

1. A coating equipment, characterized in that, include: A reaction chamber has a reaction chamber, and multiple atmosphere zones are arranged in the reaction chamber at intervals around the center of the reaction chamber. A cover is disposed above the reaction chamber and is used to close the reaction chamber to form the reaction chamber. The cover is provided with multiple air inlets. A silicon wafer carrier is rotatably disposed within the reaction chamber, and the silicon wafer carrier is used to support the silicon wafer to be coated. A gas equalization component is disposed on the cover. The gas equalization component has a first surface and a second surface facing each other. The gas equalization component is connected to the cover. The second surface faces the silicon wafer carrier. The first surface has a geometric center. A plurality of gas equalization zones are disposed on the first surface at intervals around the geometric center. Each gas equalization zone is provided with a gas equalization structure. Each gas equalization structure penetrates the first surface and the second surface. The plurality of air inlets are connected to the corresponding gas equalization structures. The gas equalization zones correspond one-to-one with the atmosphere zones. Among the gas equalization structures of adjacent gas equalization zones, one gas equalization structure is used to evenly disperse the precursor gas and allow the precursor gas to enter the corresponding atmosphere zone, and the other gas equalization structure is used to evenly disperse the isolation gas and allow the isolation gas to enter the corresponding atmosphere zone. The silicon wafer can pass through multiple atmosphere zones sequentially and repeatedly under the rotation of the silicon wafer carrier.

2. The coating equipment according to claim 1, characterized in that, The reaction chamber includes a bottom wall and a side wall extending away from the bottom wall along the edge of the bottom wall, and a plurality of vacuum holes are provided at intervals on the side wall; The height of the vacuum hole in the vertical direction is less than the height of the silicon wafer carrier in the vertical direction, wherein each vacuum hole is located below the corresponding atmosphere zone.

3. The coating equipment according to claim 1, characterized in that, The gas-uniform structure is a gas-uniform slit; The gas equalization zone is recessed inward to form a gas collection groove, and the bottom of the gas collection groove is provided with a gas equalization slit extending from the geometric center to the edge of the first surface. One of the gas equalization zones has a gas equalization slit for evenly dispersing the precursor gas and allowing the precursor gas to enter the corresponding atmosphere zone to form a precursor gas mass. The other gas equalization zone has a gas equalization slit for evenly dispersing the isolation gas and allowing the isolation gas to enter the corresponding atmosphere zone to form an isolation gas mass.

4. The coating equipment according to claim 3, characterized in that, The edge portion of the first surface abuts against the lower surface of the cover, and the bottom of the gas collecting groove and the lower surface of the cover together form a uniform gas chamber; The air inlet is connected to the air distribution chamber so that the precursor gas or the isolation gas can enter the air distribution chamber.

5. The coating equipment according to claim 3, characterized in that, On the first surface, an isolation zone is provided adjacent to the gas equalization zone. The gas equalization component also includes a sealing gasket, which is disposed in the isolation zone to isolate the precursor gas or isolation gas in the gas equalization chamber.

6. The coating equipment according to claim 1, characterized in that, In two adjacent gas equalization zones, one of the gas equalization zones is a precursor gas equalization zone and the other is an isolation gas equalization zone. The gas-uniformation zone of the isolation gas is provided with a plurality of gas-uniformation seams, which are spaced apart around the geometric center of the gas-uniformation zone of the isolation gas. The gap of the gas equalization slit in the isolation gas equalization zone is larger than the gap of the gas equalization slit in the precursor gas equalization zone.

7. The coating equipment according to claim 2, characterized in that, Each of the gas equalization zones is recessed inward to form a gas collection groove. In two adjacent gas equalization zones, one of the gas equalization zones is a precursor gas equalization zone and the other is an isolation gas equalization zone. The gas collecting groove of the precursor gas equalization zone is fan-shaped, and the gas collecting groove of the isolation gas equalization zone is strip-shaped.

8. The coating equipment according to claim 1, characterized in that, The coating equipment further includes a heating component, which is disposed on the bottom wall of the cover and / or the reaction chamber.

9. The coating equipment according to claim 1, characterized in that, It also includes a driver component, which includes: Electric motor; A drive shaft, one end connected to the silicon wafer carrier, and the other end slidably and sealed through the bottom plate of the reaction chamber; and The coupling is connected to the motor and the drive shaft respectively.

10. The coating equipment according to claim 1, characterized in that, The coating equipment also includes: A lifting structure, connected to the cover, is used to lift the cover.

11. The coating equipment according to claim 1, characterized in that, The plurality of atmosphere zones are respectively a first precursor atmosphere zone, a first isolation gas atmosphere zone, a second precursor atmosphere zone, and a second isolation gas atmosphere zone; the plurality of air inlets are respectively a first precursor air inlet, a first isolation gas air inlet, a second precursor air inlet, and a second isolation gas air inlet; and the plurality of gas equalization zones include a first precursor gas equalization zone, a first isolation gas equalization zone, a second precursor gas equalization zone, and a second isolation gas equalization zone. The precursor gas and the isolation gas enter the first precursor gas equalization zone, the first isolation gas equalization zone, the second precursor gas equalization zone, and the second isolation gas equalization zone respectively from the corresponding first precursor gas inlet, the first isolation gas inlet, the second precursor gas inlet, and the second isolation gas inlet, and then enter the first precursor atmosphere zone, the first isolation gas atmosphere zone, the second precursor atmosphere zone, and the second isolation gas atmosphere zone through the corresponding gas equalization structure.

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