Intelligent temperature control method and system for mocvd apparatus

Abstract

The application discloses an intelligent temperature control method and system for an MOCVD device, and belongs to the technical field of temperature control, and comprises the following steps: acquiring a reaction chamber wall temperature radiation interference judgment index of the MOCVD device, performing reaction chamber wall temperature radiation interference analysis, judging the existence of slow coupling heat increase of the reaction chamber inner wall radiation, when the slow coupling heat increase of the reaction chamber inner wall radiation exists, performing a hedging adjustment of the slow coupling heat increase based on an edge curtain gas proportion, after the hedging adjustment is performed, analyzing the temperature control compensation effect of the slow coupling heat increase, and when it is judged that temperature inconsistency is introduced by the temperature control compensation, performing adaptive rollback of the edge curtain gas proportion. The application can accurately judge the slow coupling heat increase phenomenon of the reaction chamber inner wall radiation, and through dynamic hedging adjustment and adaptive rollback of the edge curtain gas proportion, stable control and uniform compensation of a temperature field are realized, the risk of temperature inconsistency caused by temperature control compensation is reduced, and the temperature uniformity and process stability of a reaction process are improved.

Description

Technical Field

[0001] This invention relates to the field of temperature control technology, and in particular to an intelligent temperature control method and system for MOCVD equipment. Background Technology

[0002] MOCVD (Metal-Organic Chemical Vapor Deposition) equipment refers to a complete set of process equipment that utilizes the gas-phase reaction between metal-organic precursors and reactive gases on a heated substrate surface under controlled temperature, pressure, and atmosphere to deposit compound thin films (such as GaN, AlGaN, InGaAs, Al2O3, etc.). It typically includes: a process chamber / reactor: single or multiple plates (planetary, close-spray, etc.), with a carrier disk / edge ring and observation window; a heating and rotation system: resistance / infrared / induction heating, multi-zone temperature control, and substrate rotation homogenization; gas supply and distribution: pipelines for precursors (such as TMGa / TMA / TMIn, NH3 / AsH3 / PH3) and carrier gases (H2 / N2), evaporator / bubbler, MFC, and spray plates / shower heads; and vacuum and pressure control: a pumping system and throttling valves, supporting atmospheric / low-pressure processes. Exhaust gas treatment and safety: combustion / wet scrubbing, toxic / combustible gas monitoring, interlocking and inert gas purging. Film loading and transfer: film carrier / load-lock and robotic arm. Control and monitoring: recipe execution, data logging, in-situ measurements such as optical thermography / infrared imaging / reflection monitoring (optional).

[0003] In MOCVD equipment, temperature control is one of the key factors affecting the quality, thickness uniformity and composition consistency of epitaxial layers. Temperature control systems are usually based on closed-loop control algorithms such as proportional-integral-derivative (PID) to dynamically adjust the heating power so that the actual temperature approaches the set target value.

[0004] For example, Chinese invention patent CN115877890B discloses a temperature control method and system for CVD equipment, which includes: standardizing initial temperature data to obtain standardized temperature data; acquiring timestamp data of the standardized temperature data and performing feature filtering on the standardized temperature data according to the timestamp data to obtain characteristic temperature data; performing thermal power analysis on the characteristic temperature data to obtain power data corresponding to the target CVD equipment; acquiring multiple process flow information and controlling the heater temperature of multiple process flow information according to the power data to generate heater temperature control data corresponding to each process flow information; inputting the heater temperature control data into a preset equipment temperature control analysis model to perform equipment temperature control analysis and obtain the temperature control analysis result corresponding to each process flow information.

[0005] For example, Chinese invention patent CN115167574B discloses a valve temperature control device and a vapor deposition apparatus. The valve temperature control device includes a heating element, a shielding box, and a cooling box. The heating element contacts the valve substrate and provides heat to the valve substrate to heat the reaction gas used in the vapor deposition reaction. The shielding box, made of thermally conductive material, contacts multiple first positions on the valve substrate and transfers heat between these positions. The cooling box contacts at least one second position on the valve actuator to reduce the temperature of the valve actuator. By employing this structure, the valve temperature control device can achieve different target temperatures for the reaction gas flowing through the valve substrate and the valve actuator.

[0006] The above-mentioned technology has at least the following technical problems:

[0007] Existing technologies primarily focus on temperature control in CVD equipment. However, for MOCVD equipment, due to its high reactivity and deposition rate, heat gradually accumulates on the inner wall of the reaction chamber under prolonged deposition or high-power heating conditions, causing a slow rise in the inner wall temperature. Because of the large field-of-view factor between the inner wall and the substrate, its temperature change directly affects the substrate surface temperature distribution through radiative heat transfer. This radiative heat effect is characterized by a long response delay, a slow rate of change, and the inability to be compensated instantly by the heating power of the main temperature control zone, resulting in an overall temperature drift phenomenon in existing temperature control systems during long-cycle processes. This temperature drift causes slight shifts in deposition rate and film thickness, thereby affecting the lattice quality and doping uniformity of the epitaxial layer. Summary of the Invention

[0008] To address the aforementioned technical problems in the existing technology, embodiments of the present invention provide an intelligent temperature control method and system for MOCVD equipment. The technical solution is as follows:

[0009] On the one hand, a smart temperature control method for MOCVD equipment is provided, including:

[0010] Step 1: Monitor and obtain the reaction chamber wall temperature radiation interference judgment index of the MOCVD equipment at a preset monitoring cycle, and then perform reaction chamber wall temperature radiation interference analysis to obtain the reaction chamber wall temperature radiation driving index. Based on the reaction chamber wall temperature radiation driving index, determine the existence of slow coupling heating of the reaction chamber wall radiation, so as to realize the threshold triggering of slow coupling heating of the reaction chamber wall radiation.

[0011] Step 2: When there is slow coupling heating from the radiation inside the reaction chamber wall, under the constraint of keeping the cavity pressure and the precursor partial pressure constant, the slow coupling heating is counteracted based on the edge curtain gas ratio to achieve temperature control compensation for the slow coupling heating from the radiation inside the reaction chamber wall.

[0012] Step 3: After performing the counter-regulation of slow coupling heating, analyze the temperature control compensation effect of slow coupling heating, obtain the characterization factor of the temperature control compensation effect of slow coupling heating, and then determine the temperature inconsistency introduced by the temperature control compensation. When the temperature inconsistency is determined to be introduced by the temperature control compensation, the adaptive reduction of the edge curtain gas ratio is performed to achieve self-stabilized control of the temperature field of the reaction chamber of the MOCVD equipment.

[0013] On the other hand, an intelligent temperature control system for MOCVD equipment is provided, which includes: a radiation interference analysis module, a counter-current adjustment module, and an adjustment drop-off module;

[0014] The radiation interference analysis module is used to monitor and obtain the reaction chamber wall temperature radiation interference judgment index of the MOCVD equipment at a preset monitoring cycle, thereby performing reaction chamber wall temperature radiation interference analysis, obtaining the reaction chamber wall temperature radiation driving index, and determining the existence of slow coupling heat generation of the reaction chamber wall radiation based on the reaction chamber wall temperature radiation driving index, so as to realize the threshold triggering of slow coupling heat generation of the reaction chamber wall radiation.

[0015] The offset adjustment module is used to perform offset adjustment of slow coupling heating based on the edge curtain gas ratio when there is slow coupling heating from the inner wall of the reaction chamber, while maintaining the constraint of constant chamber pressure and precursor partial pressure, thereby achieving temperature control compensation for slow coupling heating from the inner wall of the reaction chamber.

[0016] The adjustment and reduction module is used to analyze the temperature control compensation effect of slow coupling heating after the counter-adjustment of slow coupling heating, obtain the characterization factor of the temperature control compensation effect of slow coupling heating, and thus determine the temperature inconsistency introduced by temperature control compensation. When the temperature inconsistency introduced by temperature control compensation is determined, the adaptive reduction of the edge curtain gas ratio is performed to achieve self-stabilized control of the temperature field of the reaction chamber of MOCVD equipment.

[0017] The beneficial effects of the technical solutions provided in the embodiments of the present invention include at least the following:

[0018] 1. The intelligent temperature control method for MOCVD equipment provided by this invention accurately determines the slow coupling heating phenomenon of the reaction chamber wall radiation by real-time monitoring of the reaction chamber wall temperature radiation interference, and combines the dynamic offset adjustment and adaptive fall of the edge curtain gas ratio to effectively achieve stable control and uniform compensation of the temperature field, reduce the risk of temperature inconsistency caused by temperature control compensation, improve the temperature uniformity and process stability of the reaction process, thereby improving the quality and production efficiency of thin film deposition.

[0019] 2. This invention can accurately identify the slow coupling heating phenomenon of the inner wall of the reaction chamber, realizing early warning and precise control of wall temperature radiation interference; combined with dynamic counterbalancing adjustment based on the edge curtain gas ratio, it suppresses the influence of radiation heating on the temperature field, ensuring uniform temperature distribution in the reaction chamber; and by evaluating the temperature control compensation effect in real time, it automatically adjusts the edge curtain gas ratio, corrects the temperature inconsistency generated during the compensation process, enhances the adaptive adjustment capability of the temperature field, improves the stability and accuracy of temperature control of MOCVD equipment, promotes the improvement of thin film deposition quality, reduces equipment operation risks, and improves production efficiency and automation level.

[0020] 3. This invention achieves regulation and compensation for temperature anomalies caused by radiation from the inner wall of the reaction chamber by implementing counterbalancing regulation of slow-coupled heating based on the edge curtain air ratio, thereby improving the temperature distribution uniformity in the reaction chamber edge area. This counterbalancing regulation measure can flexibly adjust the airflow distribution, reduce excessive heat accumulation in local areas, avoid the generation of temperature peaks, and thus reduce the negative impact of temperature gradients on thin film deposition uniformity and material quality. It also enhances the system's adaptability to changes in slow-coupled heating, ensuring stable operation of the equipment and process repeatability under complex operating conditions. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of the intelligent temperature control method for MOCVD equipment provided in an embodiment of the present invention.

[0023] Figure 2 This is a structural diagram of an intelligent temperature control system for MOCVD equipment provided in an embodiment of the present invention.

[0024] Figure 3 This is a flowchart of wall temperature radiation interference compensation involved in an embodiment of the present invention.

[0025] Figure 4 This is a flowchart of the counter-current regulation process for slow coupling heating according to an embodiment of the present invention. Detailed Implementation

[0026] The technical solution of the present invention will now be described with reference to the accompanying drawings.

[0027] In embodiments of the present invention, words such as "exemplarily," "for example," etc., are used to indicate that something is an example, illustration, or description. Any embodiment or design described as "exemplary" in the present invention should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of the word "exemplary" is intended to present the concept in a concrete manner. Furthermore, in embodiments of the present invention, the meaning expressed by "and / or" can be both, or either one.

[0028] In the embodiments of this invention, the terms "image" and "picture" may sometimes be used interchangeably. It should be noted that, without emphasizing the distinction between them, they convey the same meaning. Similarly, the terms "of," "corresponding (relevant)," and "corresponding" may sometimes be used interchangeably. It should be noted that, without emphasizing the distinction between them, they convey the same meaning.

[0029] In this embodiment of the invention, sometimes a subscript such as W1 may be written in a non-subscript form such as W1. When the difference is not emphasized, the meaning they express is the same.

[0030] To make the technical problems, technical solutions and advantages of the present invention clearer, a detailed description will be given below in conjunction with the accompanying drawings and specific embodiments.

[0031] like Figure 1 The schematic diagram shown is a flowchart of an intelligent temperature control method for MOCVD equipment, including:

[0032] Step 1: Monitor and obtain the reaction chamber wall temperature radiation interference judgment index of the MOCVD equipment according to the preset monitoring cycle in the database. Then, perform reaction chamber wall temperature radiation interference analysis to determine the existence of slow coupling heating of the reaction chamber wall radiation, so as to realize the threshold triggering of slow coupling heating of the reaction chamber wall radiation.

[0033] Furthermore, the reaction chamber wall temperature radiation interference determination index of the MOCVD equipment is obtained, and the specific process is as follows:

[0034] The rate of change of the reaction chamber heater power and the rate of change of the reaction chamber substrate temperature were obtained.

[0035] In one embodiment, the rate of change of the reaction chamber heater power is obtained by collecting and processing the actual power signal of the heater in real time. Specifically, the system obtains the real-time power reading through the power monitoring device on the power supply side of the heater. The power monitoring device can be a power meter, a power calculation module supporting current / voltage sensors, or a dedicated power measurement board. The real-time power reading is timestamped and recorded in the controller. Subsequently, the controller preprocesses the power time series signal, including removing isolated outliers, performing low-pass or moving average smoothing to suppress measurement noise, and synchronizing the data according to the preset sampling period. According to the processed time series change, the change trend of power over time is quantified into a rate of change index and output, which is used as one of the inputs for judging the reaction chamber wall temperature radiation interference.

[0036] The rate of change of the reaction chamber substrate temperature is obtained by the temperature sensor on the substrate or the substrate support. The temperature sensor can be an embedded thermocouple, a resistance temperature detector (RTD), or a non-contact infrared thermometer (high-temperature infrared monochromator / spectrometer), depending on the specific process. The sensor collects temperature data at a predetermined sampling frequency and assigns a timestamp, and the data is uploaded to the controller. The controller filters the temperature time series data (such as moving average or adaptive filtering), and removes short-term jumps introduced by particles, air flow disturbances, etc. The processed temperature time series is quantified into the rate of change of the substrate temperature over time and output, which is used as one of the inputs for judging the reaction chamber wall temperature radiation interference.

[0037] As Figure 3 shown, it is the flowchart of the reaction chamber wall temperature radiation interference compensation involved in the embodiment of the present invention. First, continuously analyze the reaction chamber wall temperature radiation interference judgment index to determine whether it is greater than zero; if so, calculate the reaction chamber wall temperature radiation driving index and determine whether it is greater than or equal to the reaction chamber wall temperature radiation driving index adaptive threshold; if it is less than the reaction chamber wall temperature radiation driving index adaptive threshold, it is determined that there is no slow coupling heat increase, and continue to monitor; otherwise, perform slow coupling heat increase hedging adjustment. After performing the slow coupling heat increase hedging adjustment, calculate the temperature control compensation effect characterization factor and determine whether it is less than the temperature control compensation effect characterization threshold; if it is less than the temperature control compensation effect characterization threshold, the compensation is normal, and continue to monitor; otherwise, extract the fallback ratio and perform the curtain gas ratio fallback.

[0038] Construct an indicator function based on the rate of change of the reaction chamber heater power, and combine it with the rate of change of the reaction chamber substrate temperature to obtain the reaction chamber wall temperature radiation interference judgment index of the MOCVD device.

[0039] In this embodiment, if the output power of the heater remains stable, but the substrate temperature still shows a continuous change, it is inferred that there may be reaction chamber wall temperature radiation interference, and further analysis of the reaction chamber wall temperature radiation interference is required.

[0040] It's important to explain that in the controlled heating system of MOCVD, if the heater output power remains stable (i.e., the active heat input of the control system remains unchanged), then ideally, the substrate temperature should tend to stabilize and not continuously rise or fall. If the substrate temperature continues to change even under this stable power condition, it indicates that the temperature change is not caused by the heater's control power, but rather by an additional heat or cold source not directly regulated by the temperature control system. In MOCVD equipment, the most significant additional heat source is the radiative heat from the reaction chamber walls: under prolonged high-power heating and the exothermic effects of side reactions of the reaction gases, the reaction chamber walls gradually accumulate heat. As the wall temperature rises, the wall surface radiates heat to the substrate through infrared radiation. Since the intensity of radiative heat transfer is proportional to the fourth power of the wall surface temperature (based on the Stefan-Boltzmann law), even if the heater power remains constant, the increased radiative contribution will lead to an increase in the total heat absorbed by the substrate.

[0041] The reaction chamber wall temperature radiation interference determination index of MOCVD equipment serves as a critical condition for triggering reaction chamber wall temperature radiation interference analysis and as one of the numerical bases for such analysis.

[0042] In a specific embodiment, the reaction chamber wall temperature radiation interference determination index of the MOCVD equipment is expressed as follows:

[0043] ,

[0044] Where A is the reaction chamber wall temperature radiation interference judgment index of the MOCVD equipment, [d(T) / dt] is the reaction chamber substrate temperature change rate, and [dP(t) / dt] is the reaction chamber heater power change rate. It is a local minimum.

[0045] It is important to understand that 1 条件 This is an indicator function, whose mathematical meaning is that if the condition is true, the indicator function outputs 1; if the condition is false, the indicator function outputs 0.

[0046] The minimum value is preset in the database and represents the tolerance range of the power change rate. It is used to filter out invalid interference. When the power change rate is less than the minimum value, the heating power of the MOCVD equipment will have slight fluctuations during normal operation (noise, adjustment margin). Therefore, the power is considered to be stable and the temperature change is no longer actively caused by the temperature control system.

[0047] In this embodiment, the condition is that [dP(t) / dt] is less than the minimum value, that is, the power of the reaction chamber heater remains basically unchanged.

[0048] If the reaction chamber wall temperature radiation interference judgment index of the MOCVD equipment is greater than zero, a reaction chamber wall temperature radiation interference analysis command is generated to perform reaction chamber wall temperature radiation interference analysis.

[0049] If the reaction chamber wall temperature radiation interference judgment index of the MOCVD equipment is greater than zero, it indicates that there is a nonlinear positive correlation shift between the substrate temperature change trend and the heating power change trend within the current monitoring period. This shift cannot be explained by the power change of the main temperature control zone. In other words, the inner wall of the reaction chamber has experienced continuous heat accumulation under long-term high-temperature conditions, and the inner wall temperature shows a slow upward trend. It releases heat to the substrate area through radiation heat transfer via a large field factor, causing the substrate surface temperature to continue to rise even when the heating power remains stable or does not change significantly. This forms a slow-variable thermal disturbance that the main temperature control loop cannot compensate for in real time. Therefore, a reaction chamber wall temperature radiation interference analysis command is generated to perform reaction chamber wall temperature radiation interference analysis.

[0050] If the reaction chamber wall temperature radiation interference judgment index of the MOCVD equipment is equal to zero, a continuous monitoring command is generated to continue monitoring and obtaining the reaction chamber wall temperature radiation interference judgment index of the MOCVD equipment at a preset monitoring cycle.

[0051] If the reaction chamber wall temperature radiation interference determination index of the MOCVD equipment is equal to zero, it indicates that no additional heating effect independent of the heating control signal was detected between the substrate temperature change trend and the heating power change trend during the current monitoring period. That is, the radiant heat of the reaction chamber wall did not have an identifiable interference effect on the substrate temperature distribution. Therefore, a continuous monitoring instruction is generated to continue monitoring and obtaining the reaction chamber wall temperature radiation interference determination index of the MOCVD equipment at the preset monitoring period to ensure timely response when thermal interference signs appear in the future.

[0052] Furthermore, an analysis of the radiation interference from the reaction chamber wall temperature was conducted. The specific analysis process is as follows:

[0053] Within a preset time window, the cumulative deposition duration on the inner wall of the reaction chamber, the average heating power of the reaction chamber, and the rate of change of the temperature difference of the substrate in the reaction chamber are obtained.

[0054] It should be explained that the cumulative deposition duration on the inner wall of the reaction chamber represents the total time that the deposition process has continued since the last cleaning, maintenance, or replacement of the inner wall surface. This time can be obtained by recording and summing the time periods during which the reaction chamber is in the deposition process state. The determination of whether the reaction chamber is in the deposition process state can be based on conditions such as the start / stop signals of the deposition mode in the process control system, the detection results of the precursor gas by the gas flow sensor, or the duration of the heater being at the process set power level, and is recorded by the system program log.

[0055] The average heating power of the reaction chamber refers to the average value of the actual output power signal of the heater within a preset time window. Specifically, it is obtained as follows: During the operation of the reaction chamber, the power monitoring device collects the heater's output power data in real time (which can be obtained through a combination of current and voltage measurements and calculations, or directly from feedback by the heater control module), and records the corresponding timestamps; the controller smooths and removes outliers from the power data within the target time window, and then calculates the average power value using an equal-weighted method. This average power reflects the overall energy input level required by the heater to maintain the set temperature of the reaction chamber during that time period.

[0056] It should be noted that the reaction chamber substrate temperature difference change rate refers to the rate of change of the temperature difference between the edge region and the center region of the reaction chamber substrate (edge ​​temperature minus center region) over time within a preset time window. This parameter is used to reflect the dynamic trend of temperature distribution.

[0057] It is important to understand that the central region and the edge region of the substrate are fixed spatial ranges that are pre-divided according to the geometry of the reaction chamber substrate and the process requirements. The central region usually refers to the core part in the middle of the substrate, while the edge region refers to the outer perimeter zone near the edge of the substrate.

[0058] Extract the reaction chamber wall temperature radiation interference judgment index, the cumulative deposition duration of the inner wall of the reference reaction chamber, the average heating power of the reference reaction chamber, and the substrate temperature difference change rate of the reference reaction chamber from the database.

[0059] Extract the following pre-defined factors from the database: reaction chamber wall temperature radiation interference determination index allocation factor, reaction chamber wall deposition cumulative duration radiation-driven allocation factor, reaction chamber average heating power radiation-driven allocation factor, and reaction chamber substrate temperature difference change rate radiation-driven allocation factor.

[0060] In this embodiment, the system database pre-stores configuration data for multiple radiation drive allocation factors used for wall temperature radiation drive analysis. These factors characterize the proportional relationships of different parameter sets (in this embodiment, the MOCVD equipment's reaction chamber wall temperature radiation interference judgment index, reaction chamber inner wall deposition accumulation duration, reaction chamber average heating power, and reaction chamber substrate temperature difference change rate) in the overall radiation drive quantitative evaluation. The configuration data is managed in the form of a structured weighted parameter set, which is comprehensively determined based on long-term MOCVD process operation data, thermal field change monitoring results, and radiation interference response analysis conclusions. Based on this parameter set, the system can directly read the MOCVD equipment's reaction chamber wall temperature radiation interference judgment index allocation factor, reaction chamber inner wall deposition accumulation duration radiation drive allocation factor, reaction chamber average heating power radiation drive allocation factor, and reaction chamber substrate temperature difference change rate radiation drive allocation factor from the database before performing wall temperature radiation interference judgment. The allocation factors are real values ​​between 0 and 1, and the sum of the four is 1, ensuring that the influence ratio of different parameters is stable and their physical meaning is clear when calculating the weighted radiation drive index.

[0061] Based on the reaction chamber wall temperature radiation interference determination index of MOCVD equipment, the reaction chamber wall temperature radiation interference analysis is carried out by combining the cumulative deposition duration on the inner wall of the reaction chamber, the average heating power of the reaction chamber, and the temperature difference change rate of the substrate in the reaction chamber, and the reaction chamber wall temperature radiation driving index is obtained.

[0062] The specific analysis process of the reaction chamber wall temperature radiation-driven index is as follows: The reaction chamber wall temperature radiation interference judgment index, the cumulative deposition duration of the reaction chamber wall, the average heating power of the reaction chamber, and the reaction chamber substrate temperature difference change rate of the MOCVD equipment are compared with the corresponding reference values ​​by the radiation-driven allocation factor and then weighted and coupled to obtain the reaction chamber wall temperature radiation-driven index.

[0063] During the operation of MOCVD equipment, the extended duration of deposition accumulation on the inner wall of the reaction chamber will lead to changes in the absorption and radiation characteristics of the wall surface, thereby affecting the stability of the substrate temperature difference in the reaction chamber (i.e., the change rate of substrate temperature difference). Fluctuations in the average heating power of the reaction chamber will directly affect the substrate temperature difference change rate. At the same time, an abnormal increase in the substrate temperature difference change rate may trigger the adjustment of heating power in the opposite direction, so that the four parameters form a dynamic coupling and feedback regulation relationship.

[0064] Incorporating the reaction chamber wall temperature radiation interference judgment index of MOCVD equipment into the analysis framework of the reaction chamber wall temperature radiation driving index can better fit the actual thermal field coupling characteristics. This allows the reaction chamber wall temperature radiation driving index to not only reflect the theoretical trend of wall temperature radiation intensity, but also the dynamic interference signals during operation (i.e., to establish a more direct correlation with the aforementioned triggering conditions), thereby improving the accuracy and timeliness of radiation interference judgment and temperature control adjustment.

[0065] A higher reaction chamber wall temperature radiation interference determination index indicates that even if the heater power does not increase, the substrate temperature still shows an upward trend, which represents an increase in the contribution of wall temperature radiation.

[0066] The longer the deposition accumulates on the inner wall of the reaction chamber, the more likely the deposited layer is to change the heat reflection and absorption characteristics of the inner wall, making it easier for the wall temperature to rise and radiate heat to the substrate.

[0067] The higher the average heating power of the reaction chamber, the higher the overall heat input, the higher the inner wall temperature, and the stronger the radiant heat source.

[0068] The greater the rate of change of temperature difference in the reaction chamber substrate, the more sensitive the local temperature field is to changes in external heat sources, and the more easily it is driven by wall temperature radiation.

[0069] In a specific embodiment, the radiation-driven index of the reaction chamber wall temperature is expressed as follows:

[0070] ,

[0071] Wherein, B is the reaction chamber wall temperature radiation driving index, A is the reaction chamber wall temperature radiation interference judgment index of the MOCVD equipment, c is the cumulative deposition duration on the inner wall of the reaction chamber, d is the average heating power of the reaction chamber, f is the reaction chamber substrate temperature difference change rate, A0 is the reaction chamber wall temperature radiation interference judgment index of the reference MOCVD equipment, c0 is the cumulative deposition duration on the inner wall of the reference reaction chamber, d0 is the average heating power of the reference reaction chamber, f0 is the reference reaction chamber substrate temperature difference change rate, x1 is the MOCVD equipment reaction chamber wall temperature radiation interference judgment index allocation factor, x2 is the radiation driving allocation factor for the cumulative deposition duration on the inner wall of the reaction chamber, x3 is the radiation driving allocation factor for the average heating power of the reaction chamber, and x4 is the radiation driving allocation factor for the reaction chamber substrate temperature difference change rate.

[0072] Furthermore, the existence of slow-coupled heating from radiation within the reaction chamber was determined, and the specific analysis process is as follows:

[0073] Extract the preset threshold value of the reaction chamber wall temperature radiation drive index from the database.

[0074] The length of the allowable deviation range of the radiation drive index threshold is extracted based on the radiation drive index of the reaction chamber wall temperature.

[0075] In this embodiment, the system pre-defines a correspondence rule between the reaction chamber wall temperature radiation-driven index and the corresponding allowable deviation range of the radiation-driven index threshold. This correspondence rule is stored in the database in the form of a hierarchical threshold configuration set. When it is necessary to obtain the allowable deviation range of the radiation-driven index threshold, the currently calculated reaction chamber wall temperature radiation-driven index is used as the retrieval key. The matching entry is located in the hierarchical threshold configuration set, and the associated allowable deviation range of the radiation-driven index threshold is extracted. This ensures that the tolerance range can be flexibly adjusted according to the current thermal field state during the radiation-driven determination process, improving the adaptability and stability of the determination.

[0076] It should be added that a larger reaction chamber wall temperature radiation driving index indicates a stronger driving effect of thermal radiation from the reaction chamber wall on the substrate temperature field, a more significant influence of wall temperature changes on the thermal field distribution, and a higher risk of local temperature fluctuations. To avoid overly sensitive misjudgments and to ensure the adjustment stability of the temperature control system, the allowable deviation range of the extracted radiation driving index threshold is larger, providing a more relaxed tolerance range for temperature adjustment under high radiation driving conditions, thereby reducing system disturbances caused by frequent adjustments.

[0077] The adaptive threshold of the reaction chamber wall temperature radiation-driven index is obtained by using the threshold of the reaction chamber wall temperature radiation-driven index and the allowable deviation interval length of the radiation-driven index threshold. In other words, the sum of the threshold of the reaction chamber wall temperature radiation-driven index and the allowable deviation interval length of the radiation-driven index threshold is used as the adaptive threshold of the reaction chamber wall temperature radiation-driven index.

[0078] The adaptive threshold of the radiation drive index of the reaction chamber wall temperature refers to the judgment boundary value obtained by dynamically correcting the threshold of the radiation drive index by combining the allowable deviation range of the radiation drive index threshold. It is used to adaptively adjust the sensitivity and tolerance range of radiation drive judgment under different radiation drive intensity conditions, thereby improving the regulation stability and anti-interference capability of the temperature control system while ensuring the accuracy of thermal field judgment.

[0079] If the reaction chamber wall temperature radiation driving index is greater than or equal to the adaptive threshold of the reaction chamber wall temperature radiation driving index, then it is determined that there is slow coupling heating of the reaction chamber wall radiation.

[0080] If the reaction chamber wall temperature radiation driving index is greater than or equal to the adaptive threshold of the reaction chamber wall temperature radiation driving index, it indicates that the radiation heat from the inner wall of the reaction chamber has a significant driving effect on the substrate temperature distribution under the current operating conditions. The heat transfer process shows a cumulative enhancement trend, and the influence of wall temperature change on the substrate temperature field continues and gradually amplifies.

[0081] If the reaction chamber wall temperature radiation driving index is less than the adaptive threshold of the reaction chamber wall temperature radiation driving index, it is determined that there is no slow coupling heating of the reaction chamber wall radiation, and a prompt message is generated.

[0082] If the reaction chamber wall temperature radiation driving index is less than the adaptive threshold of the reaction chamber wall temperature radiation driving index, it indicates that the influence of the radiation heat from the inner wall of the reaction chamber on the substrate temperature field is negligible or slight, and the heat transfer process does not show obvious cumulative heating characteristics.

[0083] Step 2: When there is slow coupling heating from the radiation inside the reaction chamber wall, under the constraint of keeping the cavity pressure and the precursor partial pressure constant, the slow coupling heating is counteracted based on the edge curtain gas ratio to achieve temperature control compensation for the slow coupling heating from the radiation inside the reaction chamber wall.

[0084] It should be explained that the above constraint of keeping the cavity pressure and precursor partial pressure constant means that when performing counter-regulation of slow coupling heating based on the proportion of edge curtain gas, the total pressure (cavity pressure) of the reaction chamber and the average partial pressure of each precursor in the cavity are not allowed to be changed; only a small reconstruction is made on the spatial distribution of the carrier gas (edge ​​and center) to avoid step disturbances to the main reaction rate and growth chemical equilibrium.

[0085] Furthermore, based on the edge curtain air ratio, a counterbalancing adjustment of slow-coupled heating is performed, the specific process of which is as follows:

[0086] The reaction chamber wall temperature radiation drive index and the reaction chamber wall temperature radiation drive index adaptive threshold are used to perform difference processing to obtain the reaction chamber wall temperature radiation drive deviation index.

[0087] The difference processing refers to subtracting the adaptive threshold of the reaction chamber wall temperature radiation driving index from the reaction chamber wall temperature radiation driving index.

[0088] The reaction chamber wall temperature radiation drive deviation index characterizes the degree of deviation of the reaction chamber wall temperature radiation drive state from the adaptive threshold of the reaction chamber wall temperature radiation drive index. It reflects the abnormal driving intensity of wall temperature radiation on the substrate temperature field and serves as a direct criterion and adjustment basis for the supplementation of edge curtain gas ratio. It is used to make timely compensation and control when radiation drive deviates, so as to ensure the balance and stability of the thermal field in the reaction zone.

[0089] like Figure 4The diagram shown is a flowchart of the hedging adjustment process for slow coupling heating according to an embodiment of the present invention. First, the supplementary value of the edge curtain gas ratio is retrieved. Then, a first judgment condition and a second judgment condition are set. It is determined whether both the first judgment condition and the second judgment condition are met. If both are met, the hedging adjustment execution buffer time is set to the minimum allowable hedging adjustment execution buffer time, and the hedging adjustment for slow coupling heating is executed after the buffer time ends. If neither is met, the hedging adjustment execution buffer time is extracted based on the hedging adjustment execution buffer time extraction factor. After the buffer time ends, the first judgment condition and the second judgment condition are re-determined to be met. If both are met again, the hedging adjustment execution buffer time is set to the minimum allowable hedging adjustment execution buffer time and the hedging adjustment for slow coupling heating is executed. If neither is met, a warning message is generated.

[0090] The supplementary value of the edge curtain gas ratio was retrieved based on the deviation index of the reaction chamber wall temperature radiation drive.

[0091] In this embodiment, the system pre-establishes a corresponding dataset between the reaction chamber wall temperature radiation-driven deviation index and the corresponding edge curtain gas ratio supplementary value. This dataset is stored in the database in the form of a segmented supplementary configuration library. When it is necessary to obtain the edge curtain gas ratio supplementary value, the currently calculated reaction chamber wall temperature radiation-driven deviation index is used as the search condition to locate the matching record in the segmented supplementary configuration library and extract the associated edge curtain gas ratio supplementary value. This ensures that the curtain airflow ratio can be quickly corrected when the wall temperature radiation-driven effect deviates from the normal range, maintaining the stability of the temperature field and material transport in the reaction zone.

[0092] It should be added that the larger the deviation index of the reaction chamber wall temperature radiation drive, the stronger the disturbance of the substrate temperature distribution by the wall temperature radiation effect, the more obvious the impact on the temperature field uniformity, and the higher the risk of local heat accumulation and material transport deviation. In order to weaken the non-uniform effect of radiation drive through airflow regulation, the corresponding supplementary value of the edge curtain gas ratio should be larger to improve the heat insulation and flow isolation effect of the curtain gas in the edge region and maintain the overall process stability.

[0093] Curtain gas is used for heat insulation and flow isolation in the edge area of ​​the reaction chamber. By increasing the scavenging intensity in this area, curtain gas forms a stronger cooling and heat exchange channel at the edge, preferentially suppressing the edge temperature rise. After the proportion of curtain gas is increased, the dilution of the carrier gas and the increase in flow rate in the edge zone can reduce the residence and accumulation of reactants and by-products in the edge zone, suppressing the possible gas phase / surface reaction exothermic increase and local heat accumulation.

[0094] The edge curtain air ratio is the proportion of curtain air volume allocated to the edge area of ​​the reaction chamber in the curtain air distribution.

[0095] The edge curtain gas ratio supplement is the additional edge curtain gas flow rate added to the original curtain gas ratio when there is a significant deviation in the radiation-driven temperature of the reaction chamber wall. This is done to weaken the additional driving effect of inner wall radiation on the substrate edge temperature field and maintain thermal field uniformity. Expressed as a percentage, this value directly reflects the extent of airflow correction for radiation-driven anomalies, and is used in process control to actively counteract and suppress edge temperature rise and localized reaction heat accumulation.

[0096] In a specific embodiment, the inner wall of the reaction chamber slowly heats up during long-cycle processes, continuously inputting heat to the substrate edge region through radiation, resulting in a temperature drift that accumulates over time. Increasing the proportion of edge curtain gas strengthens the scavenging in the edge region, enhancing convective heat transfer and heat carrying capacity, thereby offsetting the increase in net heat input caused by inner wall radiation and achieving active counterbalancing of radiative coupling.

[0097] Analyze the buffer time for hedging and adjustment.

[0098] Slow-coupling heating is achieved by offset adjustment based on the buffer time and edge curtain gas ratio supplement value.

[0099] Furthermore, the buffer time for hedging adjustment is analyzed, and the analysis process is as follows:

[0100] Set the first and second judgment conditions.

[0101] The first criterion is that the edge curtain air margin is greater than the edge curtain air margin threshold.

[0102] In this embodiment, the edge curtain air margin refers to the effective available flow rate that the edge curtain air path mass flow controller can still adjust upwards from the current set value, provided that it does not exceed the allowable upper limit of the path (equipment rated upper limit or process safety upper limit).

[0103] The second criterion is that the center carrier gas reduction margin is greater than the center carrier gas reduction margin threshold.

[0104] The central carrier gas reduction margin refers to the effective available flow rate that can still be reduced from the current set value of the central carrier gas route, provided that it is not lower than the allowable lower limit of the route (equipment rated lower limit or process safety lower limit).

[0105] If both the first and second judgment conditions are met, the offset adjustment execution buffer time is set to the minimum allowable offset adjustment execution buffer time, and the slow coupling heating offset adjustment is executed immediately after the minimum allowable offset adjustment execution buffer time. That is, the sum of the current edge curtain gas ratio recorded in the system program log and the edge curtain gas ratio supplementary value is used as the edge curtain gas ratio execution value.

[0106] If both the first and second judgment conditions are met, it indicates that the adjustable margin of the edge curtain gas and the downward adjustment space of the central carrier gas are sufficient. The system has the ability to simultaneously utilize airflow distribution optimization and central gas supply regulation to quickly offset the slow coupling heating caused by the thermal radiation of the reaction chamber wall, and the execution conditions for thermal field correction have been fully met. Therefore, the offset adjustment execution buffer time can be directly set to the minimum allowable value to initiate the offset adjustment action within the shortest delay, minimizing the impact of radiative heating on temperature control stability.

[0107] If only the first judgment condition is met, the deviation between the central carrier gas reduction margin and the central carrier gas reduction margin threshold is recorded as the hedging adjustment execution buffer time extraction factor, that is, the result of subtracting the central carrier gas reduction margin from the central carrier gas reduction margin threshold is recorded as the hedging adjustment execution buffer time extraction factor.

[0108] If only the second judgment condition is met, the deviation between the edge curtain air margin and the edge curtain air margin threshold is recorded as the hedging adjustment execution buffer time extraction factor, that is, the result of subtracting the edge curtain air margin from the edge curtain air margin threshold is recorded as the hedging adjustment execution buffer time extraction factor.

[0109] Extract the hedging adjustment execution buffer time based on the hedging adjustment execution buffer time extraction factor.

[0110] In this embodiment, the system obtains the hedging adjustment execution buffer time from a pre-maintained buffer time configuration set or rule base by using the hedging adjustment execution buffer time extraction factor as the retrieval basis. Specifically, the system uses the hedging adjustment execution buffer time extraction factor as the retrieval key item to search for the most matching buffer time entry in the buffer time configuration set or rule base. If the search finds an exact entry, the buffer time indicated by that entry is directly extracted as the execution buffer time; if no exact entry is found, candidate buffer times are generated by selecting from neighboring entries according to priority and performing smooth weighting according to a preset proximity rule.

[0111] After the hedging adjustment execution buffer time ends, the first and second judgment conditions are re-evaluated. If both the first and second judgment conditions are met, the hedging adjustment execution buffer time is set to the minimum allowable hedging adjustment execution buffer time. Slow coupling heating hedging adjustment is then executed immediately after the minimum allowable hedging adjustment execution buffer time. That is, the sum of the current edge curtain gas ratio recorded in the system program log and the edge curtain gas ratio supplementary value is used as the edge curtain gas ratio execution value.

[0112] If both the first and second judgment conditions are met, it indicates that the system currently has sufficient margin for edge curtain gas and downward adjustment space for central carrier gas, and the environmental conditions are stable and meet the requirements for rapid response. At this time, the offset adjustment execution buffer time is continued to be set to the minimum allowable value, and the slow coupling heating offset adjustment is immediately started after the buffer time ends, so as to suppress the temperature anomaly caused by the thermal radiation of the reaction chamber wall in a timely manner and ensure the stability of the reaction process.

[0113] After the buffer period for hedging adjustment ends, the first and second judgment conditions are re-evaluated. If the first and second judgment conditions are not simultaneously met, an early warning message is generated.

[0114] If neither the first nor the second judgment condition is met simultaneously, it indicates that the current system still has limitations in terms of edge curtain air margin or center carrier air reduction, and cannot simultaneously meet the needs for rapid and comprehensive adjustment. To avoid misjudgment or blind execution of adjustment actions, the system will generate an early warning message to alert the operator.

[0115] Step 3: After performing the counter-regulation of slow coupling heating, analyze the temperature control compensation effect of slow coupling heating, obtain the characterization factor of the temperature control compensation effect of slow coupling heating, and then determine the temperature inconsistency introduced by the temperature control compensation. When the temperature inconsistency is determined to be introduced by the temperature control compensation, the adaptive reduction of the edge curtain gas ratio is performed to achieve self-stabilized control of the temperature field of the reaction chamber of the MOCVD equipment.

[0116] Furthermore, the temperature control compensation effect of slow coupling heating is analyzed, and the specific analysis process is as follows:

[0117] After performing the hedging adjustment, the actual temperature change rate at the edge of the reaction chamber substrate and the temperature difference change rate between the center and the edge are collected according to the preset monitoring duration in the database. The temperature control compensation effect of slow coupling heating is analyzed, and the characterization factor of the temperature control compensation effect of slow coupling heating is obtained.

[0118] The above temperatures were obtained by a temperature sensor on the substrate of the reaction chamber.

[0119] The actual temperature change rate at the edge refers to the actual temperature data sequence collected by the temperature sensor at the edge location within a preset monitoring period, and the rate of temperature change calculated based on the actual temperature data sequence, which reflects the dynamic trend of temperature change in the substrate edge region over time.

[0120] The center-edge temperature difference change rate refers to the rate of change of the absolute value of the temperature difference (center temperature minus edge temperature) between the center and edge of the substrate in the reaction chamber over a preset monitoring period. This indicator is used to reflect the dynamic changes in the uniformity of the substrate temperature field.

[0121] It is important to note that in this embodiment, when analyzing the radiation-driven index of the reaction chamber wall temperature, the rate of change of the reaction chamber substrate temperature difference, one of its influencing parameters, is calculated by subtracting the temperature of the central region from the temperature of the edge region. This is because the focus here is on the direction and trend of the temperature difference. Radiative interference often causes radiative heat from the reaction chamber wall to transfer from the edge to the center, resulting in an increase in edge temperature and affecting the temperature distribution. By calculating the rate of change of "edge temperature minus center temperature," the dynamic change of the edge temperature relative to the center temperature can be directly reflected, which is a key indicator for determining whether radiative heat accumulates at the edge and affects the overall temperature field.

[0122] When analyzing the characterization factors of the temperature control compensation effect of slow-coupled heating, the absolute value of the temperature difference (absolute temperature difference change rate between center and edge) is used for the influencing parameter, the center-edge temperature difference change rate. This is because the focus of the analysis at this time is the temperature compensation effect of the aforementioned counterbalancing regulation, which focuses on the uniformity of the temperature field. Regardless of the direction of the temperature difference, the magnitude of the temperature difference itself is the key. Using the absolute value can objectively reflect the fluctuation range of the temperature difference, avoid the situation of directional cancellation, and help to assess whether the compensation effectively reduces temperature inconsistency, thereby improving the stability of the overall temperature field.

[0123] Extract the actual temperature change rate of the reference edge and the temperature difference change rate of the reference center-edge from the database.

[0124] Extract the pre-defined edge actual temperature change rate compensation effect allocation factor and center-edge temperature difference change rate compensation effect allocation factor from the database.

[0125] In this embodiment, the system database pre-sets multiple compensation effect allocation factors for temperature compensation effect analysis, reflecting the weight distribution of different parameters (actual temperature change rate at the edge and temperature difference change rate at the center-edge) in the overall temperature compensation effect. This allocation factor information is stored in the database in the form of a standardized weight configuration table, systematically compiled based on a large amount of process monitoring data and temperature field change response analysis results. Using this configuration table, the system can directly obtain the edge actual temperature change rate compensation effect allocation factor and the center-edge temperature difference change rate compensation effect allocation factor from the database. The allocation factors are real numbers limited to the range of 0 to 1, and the sum of the two is 1, ensuring that the weight allocation of each indicator is reasonable and scientific when calculating the temperature control compensation effect characterization factors for slow-coupled heating, thus improving the accuracy and stability of temperature control regulation.

[0126] The specific analysis process of the temperature control compensation effect characterization factor of slow coupling heating is as follows: the positive half-axis operators of the actual temperature change rate at the edge and the temperature difference change rate between the center and the edge are compared with the corresponding reference values ​​by the compensation effect allocation factor, and then weighted coupling is performed to obtain the temperature control compensation effect characterization factor of slow coupling heating.

[0127] In a specific embodiment, the characterization factor for the temperature control compensation effect of slow coupling heating is expressed as follows:

[0128] ,

[0129] Where C is the characterization factor for the temperature control compensation effect of slow coupling heating, g is the actual temperature change rate at the edge of the reaction chamber substrate, and h is the temperature difference change rate between the center and edge of the reaction chamber substrate. + Let [h] be the positive semi-axis operator representing the actual rate of temperature change at the edge of the reaction chamber substrate. + y1 is the positive half-axis operator for the rate of change of temperature difference between the center and the edge of the reaction chamber substrate, g0 is the actual rate of change of temperature at the reference edge, h0 is the rate of change of temperature difference between the reference center and the edge, y1 is the compensation effect allocation factor for the actual rate of change of temperature at the edge, and y2 is the compensation effect allocation factor for the rate of change of temperature difference between the center and the edge.

[0130] The actual temperature change rate at the edge characterizes the intensity of absolute heating at the edge and is the primary channel for enhanced wall radiation. The temperature difference change rate between the center and the edge characterizes the intensity of spatial non-uniformity and reflects whether heating is relatively concentrated at the edge. The coupled analysis of these two parameters includes two complementary dimensions: absolute temperature rise and relative imbalance, avoiding misjudgments caused by looking at only a single quantity.

[0131] By using the positive half-axis operator, only changes in the "unfavorable direction" (heating or temperature difference expansion) are counted, while changes in cooling / homogenization are automatically filtered out. This ensures that the characterization factor of the temperature control compensation effect of slow coupling heating and whether the proportion of edge curtain gas is overshooted are semantically monotonically consistent. That is, the larger the characterization factor of the temperature control compensation effect of slow coupling heating, the more likely it is to be over-supplemented.

[0132] Furthermore, when temperature inconsistency is introduced due to temperature control compensation, an adaptive reduction in the edge curtain air ratio is implemented. The specific analysis process is as follows:

[0133] Temperature non-uniformity determination is introduced by using a temperature control compensation effect characterization factor based on slow coupling heating.

[0134] Furthermore, temperature inconsistency is determined through temperature control compensation. The specific execution process is as follows:

[0135] Extract the preset threshold values ​​for characterizing the temperature control compensation effect of slow coupling heating from the database.

[0136] If the characterization factor of the temperature control compensation effect of slow coupling heating is less than the characterization threshold of the temperature control compensation effect of slow coupling heating, then it is determined that the temperature control compensation has not introduced temperature inconsistency.

[0137] If the characterization factor of the temperature control compensation effect of slow coupling heating is less than the characterization threshold of the temperature control compensation effect of slow coupling heating, it indicates that the coupling reaction between the actual temperature change rate at the edge and the temperature difference change rate between the center and the edge is within a reasonable range after temperature compensation. The compensation measures of the temperature control system have not led to obvious temperature gradient anomalies or local non-uniformity, and the temperature field distribution of the system remains stable and consistent.

[0138] If the characterization factor of the temperature control compensation effect of slow coupling heating is greater than or equal to the characterization threshold of the temperature control compensation effect of slow coupling heating, then it is determined that temperature control compensation introduces temperature inconsistency.

[0139] If the characterization factor of the temperature control compensation effect of slow coupling heating is greater than or equal to the characterization threshold of the temperature control compensation effect of slow coupling heating, it indicates that the coupling reaction between the actual temperature change rate at the edge and the temperature difference change rate between the center and the edge exceeds the reasonable range after temperature compensation. Due to excessive supplementation, the local temperature field becomes non-uniform, and temperature control compensation introduces temperature inconsistency.

[0140] When determining the temperature inconsistency introduced by temperature control compensation, the characteristic factor of temperature control compensation effect based on slow coupling heating is extracted as the proportion of edge curtain gas falling back.

[0141] The edge curtain air ratio reduction ratio refers to the coefficient that proportionally reduces the previous edge curtain air ratio supplement value after determining that the temperature inconsistency introduced by the temperature control compensation. It is a dimensionless proportional factor used to guide the extent of subsequent edge curtain air ratio reduction, so as to achieve targeted reduction of excessively supplemented curtain air ratio, thereby correcting the inconsistency problems of local temperature field overheating in the edge area and center-edge temperature difference expansion caused by supplementation deviation, and improving the overall effect of temperature control compensation and system stability.

[0142] The temperature control compensation effect characterization deviation factor is obtained by subtracting the temperature control compensation effect characterization threshold of the slow coupling heating temperature control compensation effect characterization factor, and the edge curtain gas ratio drop ratio is extracted based on the temperature control compensation effect characterization deviation factor.

[0143] In this embodiment, the system pre-configures correlation data between the temperature control compensation effect characterization deviation factor and the corresponding edge curtain air ratio drop ratio. This correlation data is stored in the database in the form of a graded adjustment reference table. When it is necessary to extract the edge curtain air ratio drop ratio, the system uses the currently calculated temperature control compensation effect characterization deviation factor as the retrieval basis, matches the corresponding record in the graded adjustment reference table, and extracts the corresponding edge curtain air ratio drop ratio. This achieves precise adjustment of the airflow configuration, improving the overall effect of temperature control compensation and system stability.

[0144] It should be added that the larger the deviation factor characterizing the temperature control compensation effect, the more likely there is a deviation or error in the aforementioned adjustment of the edge curtain air ratio. This results in the airflow configuration in the edge area failing to achieve the expected effect during the temperature control compensation process, leading to increased local temperature field non-uniformity. In order to promptly correct the abnormal temperature distribution caused by the adjustment deviation and ensure the stable operation of the overall temperature control system, the corresponding reduction ratio of the extracted edge curtain air ratio should be greater. This is to gradually reduce or correct the previously excessively added curtain air ratio and restore a reasonable airflow distribution.

[0145] The value of the decrease in the air ratio of the edge curtain is analyzed based on the decrease ratio and the increase value of the air ratio of the edge curtain. The product of the decrease ratio and the increase value of the air ratio of the edge curtain is taken as the decrease value of the air ratio of the edge curtain.

[0146] The edge curtain air percentage reduction value refers to the specific reduction percentage obtained by multiplying the edge curtain air percentage reduction ratio by the corresponding edge curtain air percentage supplementary value after obtaining the edge curtain air percentage reduction ratio. It is used to characterize the actual amount of curtain air percentage that needs to be withdrawn.

[0147] The reduction value of the edge curtain air ratio serves as a direct control command for the temperature control execution module, driving the airflow distribution system to reduce the corresponding proportion of edge curtain airflow. This gradually restores the airflow configuration to a reasonable distribution state, preventing the exacerbation of local temperature field non-uniformity caused by excessive supplementation, and ensuring the stability and repeatability of the temperature control compensation strategy during long-term operation.

[0148] The edge curtain air ratio is adaptively reduced based on the edge curtain air ratio reduction value, that is, the aforementioned edge curtain air ratio execution value minus the edge curtain air ratio reduction value is used as the current execution edge curtain air ratio.

[0149] like Figure 2 The diagram shown illustrates the structure of an intelligent temperature control system for MOCVD equipment. The system includes a radiation interference analysis module, a counter-adjustment module, and an adjustment fallback module.

[0150] The radiation interference analysis module is used to monitor and obtain the reaction chamber wall temperature radiation interference judgment index of the MOCVD equipment at a preset monitoring cycle, thereby performing reaction chamber wall temperature radiation interference analysis, obtaining the reaction chamber wall temperature radiation driving index, and determining the existence of slow coupling heat generation of the reaction chamber wall radiation based on the reaction chamber wall temperature radiation driving index, so as to realize the threshold triggering of slow coupling heat generation of the reaction chamber wall radiation.

[0151] The offset adjustment module is used to perform offset adjustment of slow coupling heating based on the edge curtain gas ratio when there is slow coupling heating from the inner wall of the reaction chamber, while maintaining the constraint of constant chamber pressure and precursor partial pressure, thereby achieving temperature control compensation for slow coupling heating from the inner wall of the reaction chamber.

[0152] The adjustment and reduction module is used to analyze the temperature control compensation effect of slow coupling heating after the counter-adjustment of slow coupling heating, obtain the characterization factor of the temperature control compensation effect of slow coupling heating, and thus determine the temperature inconsistency introduced by temperature control compensation. When the temperature inconsistency introduced by temperature control compensation is determined, the adaptive reduction of the edge curtain gas ratio is performed to achieve self-stabilized control of the temperature field of the reaction chamber of MOCVD equipment.

[0153] The above embodiments can be implemented, in whole or in part, by software, hardware (such as circuits), firmware, or any other combination thereof. When implemented using software, the above embodiments can be implemented, in whole or in part, as a computer program product. A computer program product includes one or more computer instructions or computer programs. When the computer instructions or computer programs are loaded or executed on a computer, all or part of the flow or function according to the embodiments of the present invention is generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. Computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via wired (e.g., infrared, wireless, microwave, etc.) means. A computer-readable storage medium can be any available medium that a computer can access or a data storage device such as a server or data center that includes one or more sets of available media. Available media can be magnetic media (e.g., floppy disks, hard disks, magnetic tapes), optical media (e.g., DVDs), or semiconductor media. Semiconductor media can be solid-state drives.

[0154] It should be understood that the term "and / or" in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural. Additionally, the character " / " in this article generally indicates an "or" relationship between the preceding and following related objects, but it can also represent an "and / or" relationship. Please refer to the context for a more accurate understanding.

[0155] In this invention, "at least one" means one or more, and "more than one" means two or more. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of a single item or a plurality of items. For example, at least one of a, b, or c can represent: a, b, c, ab, ac, bc, or abc, where a, b, and c can be a single item or multiple items.

[0156] It should be understood that, in various embodiments of the present invention, the order of the above-mentioned process numbers does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present invention.

[0157] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementations should not be considered beyond the scope of this invention.

[0158] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the devices, apparatuses, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0159] In addition, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0160] If a function is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this invention, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of the various embodiments of this invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0161] The above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A smart temperature control method for MOCVD equipment, characterized in that, Includes the following steps: Step 1: Monitor and obtain the power change rate of the reaction chamber heater and the temperature change rate of the reaction chamber substrate at a preset monitoring cycle. Construct an indication function based on the power change rate of the reaction chamber heater and obtain the reaction chamber wall temperature radiation interference judgment index of the MOCVD equipment by combining the reaction chamber substrate temperature change rate. The reaction chamber wall temperature radiation interference analysis is carried out by weighting and coupling the results of comparing the reaction chamber wall temperature radiation interference judgment index, the cumulative deposition duration on the inner wall of the reaction chamber, the average heating power of the reaction chamber, and the reaction chamber substrate temperature difference change rate with the corresponding reference values ​​through the radiation driving allocation factor, so as to obtain the reaction chamber wall temperature radiation driving index. The existence of slow coupling heating of the inner wall radiation of the reaction chamber is determined based on the reaction chamber wall temperature radiation driving index, so as to achieve threshold triggering of slow coupling heating of the inner wall radiation of the reaction chamber. Step 2: When there is slow coupling heating from the radiation inside the reaction chamber wall, under the constraint of keeping the chamber pressure and precursor partial pressure constant, the slow coupling heating is counteracted based on the edge curtain gas ratio. The curtain gas is used for heat insulation and flow isolation in the edge area of ​​the reaction chamber. The edge curtain gas ratio is the proportion of curtain gas flow allocated to the edge area of ​​the reaction chamber in the curtain gas ratio, thereby realizing temperature control compensation for slow coupling heating from the radiation inside the reaction chamber wall. Step 3: After performing the counter-regulation of slow coupling heating, analyze the temperature control compensation effect of slow coupling heating. By using the compensation effect allocation factor, the positive half-axis operators of the actual temperature change rate at the edge and the temperature difference change rate between the center and the edge are compared with the corresponding reference values ​​and then weighted and coupled to obtain the characterization factor of the temperature control compensation effect of slow coupling heating. Based on the characterization factor of temperature control compensation effect of slow coupling heating, the temperature inconsistency introduced by temperature control compensation is determined. When the temperature inconsistency introduced by temperature control compensation is determined, the proportion of edge curtain gas is adaptively reduced to achieve self-stabilized control of the temperature field of the reaction chamber of MOCVD equipment.

2. The intelligent temperature control method for MOCVD equipment according to claim 1, characterized in that, The specific process for obtaining the reaction chamber wall temperature radiation interference determination index of the MOCVD equipment is as follows: If the reaction chamber wall temperature radiation interference judgment index of the MOCVD equipment is greater than zero, a reaction chamber wall temperature radiation interference analysis command is generated to perform reaction chamber wall temperature radiation interference analysis. If the reaction chamber wall temperature radiation interference judgment index of the MOCVD equipment is equal to zero, a continuous monitoring command is generated to continue monitoring and obtaining the reaction chamber wall temperature radiation interference judgment index of the MOCVD equipment at a preset monitoring cycle.

3. The intelligent temperature control method for MOCVD equipment according to claim 2, characterized in that, The analysis of radiation interference from the reaction chamber wall temperature is performed, and the specific analysis process is as follows: The cumulative deposition duration on the inner wall of the reaction chamber, the average heating power of the reaction chamber, and the rate of change of substrate temperature difference in the reaction chamber were obtained. Based on the reaction chamber wall temperature radiation interference determination index of MOCVD equipment, the reaction chamber wall temperature radiation interference analysis is carried out by combining the cumulative deposition duration on the inner wall of the reaction chamber, the average heating power of the reaction chamber, and the temperature difference change rate of the substrate in the reaction chamber, and the reaction chamber wall temperature radiation driving index is obtained.

4. The intelligent temperature control method for MOCVD equipment according to claim 3, characterized in that, The specific analysis process for determining the existence of slow coupling heating from the indoor wall radiation of the reaction chamber is as follows: Extract the preset threshold value of the reaction chamber wall temperature radiation-driven index from the database; Extract the allowable deviation range length of the radiation driving index threshold based on the radiation driving index of the reaction chamber wall temperature; The adaptive threshold of the reaction chamber wall temperature radiation-driven index is obtained by using the reaction chamber wall temperature radiation-driven index threshold and the allowable deviation interval length of the radiation-driven index threshold. If the reaction chamber wall temperature radiation driving index is greater than or equal to the reaction chamber wall temperature radiation driving index adaptive threshold, then it is determined that there is slow coupling heating of the reaction chamber wall radiation. If the reaction chamber wall temperature radiation driving index is less than the adaptive threshold of the reaction chamber wall temperature radiation driving index, it is determined that there is no slow coupling heating of the reaction chamber wall radiation, and a prompt message is generated.

5. The intelligent temperature control method for MOCVD equipment according to claim 1, characterized in that, The counterbalancing adjustment based on the edge curtain air ratio to perform slow coupling heating is specifically as follows: The reaction chamber wall temperature radiation drive index and the reaction chamber wall temperature radiation drive index adaptive threshold are processed to obtain the reaction chamber wall temperature radiation drive deviation index. The supplementary value for the proportion of edge curtain gas was retrieved based on the reaction chamber wall temperature radiation-driven deviation index. Analyze the buffer time for hedging and adjustment; Slow-coupling heating is achieved by offset adjustment based on the buffer time and edge curtain gas ratio supplement value.

6. The intelligent temperature control method for MOCVD equipment according to claim 5, characterized in that, The analysis of the hedging adjustment execution buffer time is as follows: Set the first and second judgment conditions; The first judgment condition is that the edge curtain air margin is greater than the edge curtain air margin threshold. The second judgment condition is that the center carrier gas reduction margin is greater than the center carrier gas reduction margin threshold; If both the first and second judgment conditions are met, the offset adjustment execution buffer time is set to the minimum allowable offset adjustment execution buffer time, and the slow coupling heating offset adjustment is executed immediately after the minimum allowable offset adjustment execution buffer time. If only the first judgment condition is met, the deviation between the central carrier gas reduction margin and the central carrier gas reduction margin threshold is recorded as the hedging adjustment execution buffer time extraction factor. If only the second judgment condition is met, the deviation between the edge curtain air margin and the edge curtain air margin threshold is recorded as the hedging adjustment execution buffer time extraction factor. Extract the hedging adjustment execution buffer time based on the hedging adjustment execution buffer time extraction factor; After the hedging adjustment execution buffer time ends, the first judgment condition and the second judgment condition are re-evaluated. If both the first judgment condition and the second judgment condition are met, the hedging adjustment execution buffer time is set to the minimum allowable hedging adjustment execution buffer time, and the slow coupling heating hedging adjustment is executed immediately after the minimum allowable hedging adjustment execution buffer time. If neither the first nor the second condition is met simultaneously, a warning message will be generated.

7. The intelligent temperature control method for MOCVD equipment according to claim 1, characterized in that, The analysis of the temperature control compensation effect of slow coupling heating is as follows: After performing the hedging adjustment, the actual temperature change rate at the edge of the reaction chamber substrate and the temperature difference change rate between the center and the edge were collected to analyze the temperature control compensation effect of slow coupling heating and obtain the characterization factor of the temperature control compensation effect of slow coupling heating.

8. The intelligent temperature control method for MOCVD equipment according to claim 7, characterized in that, When temperature inconsistency is detected due to temperature control compensation, an adaptive reduction in the edge curtain air ratio is performed. The specific analysis process is as follows: Temperature non-uniformity determination is introduced by using a temperature control compensation effect characterization factor based on slow coupling heating. When determining the temperature inconsistency introduced by temperature control compensation, the characteristic factor of temperature control compensation effect based on slow coupling heating is extracted as the proportion of edge curtain gas falling back. Analysis of the decrease in the proportion of air volume in the edge curtain curtain based on the decrease ratio and the increase value of the proportion of air volume in the edge curtain curtain; The adaptive reduction of the edge curtain air ratio is performed based on the edge curtain air ratio reduction value.

9. The intelligent temperature control method for MOCVD equipment according to claim 8, characterized in that, The temperature inconsistency determination process introduced during temperature control compensation is as follows: Extract the threshold for characterizing the temperature control compensation effect of slow coupling heating; If the characterization factor of the temperature control compensation effect of slow coupling heating is less than the characterization threshold of the temperature control compensation effect of slow coupling heating, then it is determined that the temperature control compensation has not introduced temperature inconsistency. If the characterization factor of the temperature control compensation effect of slow coupling heating is greater than or equal to the characterization threshold of the temperature control compensation effect of slow coupling heating, then it is determined that temperature control compensation introduces temperature inconsistency.

10. An intelligent temperature control system for MOCVD equipment, used to implement the intelligent temperature control method for MOCVD equipment as described in any one of claims 1-9, characterized in that, The system includes: a radiation interference analysis module, a hedging adjustment module, and an adjustment fallback module; Among them, the radiation interference analysis module is used to monitor and obtain the reaction chamber wall temperature radiation interference judgment index of the MOCVD equipment at a preset monitoring cycle, thereby performing reaction chamber wall temperature radiation interference analysis, obtaining the reaction chamber wall temperature radiation driving index, and determining the existence of slow coupling heat generation of the reaction chamber wall radiation based on the reaction chamber wall temperature radiation driving index, so as to realize the threshold triggering of slow coupling heat generation of the reaction chamber wall radiation. The offset adjustment module is used to perform offset adjustment of slow coupling heating based on the edge curtain gas ratio when there is slow coupling heating from the inner wall of the reaction chamber, under the constraint of keeping the chamber pressure and the precursor partial pressure constant, thereby realizing temperature control compensation for slow coupling heating from the inner wall of the reaction chamber. The adjustment and reduction module is used to analyze the temperature control compensation effect of slow coupling heating after the counter-adjustment of slow coupling heating, obtain the characterization factor of the temperature control compensation effect of slow coupling heating, and thus determine the temperature inconsistency introduced by temperature control compensation. When the temperature inconsistency introduced by temperature control compensation is determined, the adaptive reduction of the edge curtain gas ratio is performed to achieve self-stabilized control of the temperature field of the reaction chamber of MOCVD equipment.

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