A method and system for optimizing wiring of a terminal

Abstract

This invention discloses a wiring optimization method and system for terminal blocks, specifically relating to the field of electrical connection conductor crimping technology. It addresses the challenges of concealed open circuit risks and axial conductivity uniformity control caused by uneven interlayer stress distribution during multi-strand wire crimping. The method involves acquiring conductor and crimping cavity structural parameters and identifying the multi-strand wire structure; analyzing the interlayer friction state characteristics and post-crimping micro-deformation characteristics during the crimping process; formulating a step-by-step crimping force application strategy based on these dual characteristics; calculating the conductor depth layer contact resistance dispersion coefficient after the first crimping operation; dynamically adjusting and executing the second-step crimping force strategy when the dispersion coefficient exceeds a threshold; and establishing a closed-loop control link for interlayer stress-deformation-resistance dispersion to effectively avoid the accumulation of conductor layer micro-displacement under vibration conditions, thereby achieving precise control of axial conductivity uniformity.

Description

Technical Field

[0001] This invention relates to the field of electrical connection conductor crimping technology, and more specifically, to a terminal block wiring optimization method and system. Background Technology

[0002] In the field of electrical connections, crimped terminal blocks are widely used in wire harness assembly in automotive, aerospace, and industrial equipment due to their ease of operation and high reliability. Existing technology uses crimping tools to mechanically press metal terminals and wire conductors together to form an electrical path. The process includes three core steps: removing the insulation layer, inserting the wire, and applying crimping force. The industry generally follows existing standards to control macroscopic parameters such as crimp height and width, and relies on static pull-out force and contact resistance tests to verify connection quality.

[0003] However, existing crimping processes lack effective control over the latent degradation of the internal structure of multi-strand wires. Especially under high-frequency vibration or temperature cycling conditions, the crimping force creates a non-uniform stress distribution between the stranded wire layers, causing microscopic relative displacement of the conductor layer. This displacement accumulates continuously, leading to a reduction in the effective conductive area of ​​the contact point. This manifests as a time-varying increase in the resistance of the connection point until it breaks the circuit. Moreover, this cannot be detected in static tests, resulting in a hidden failure risk in the electrical connection system. Summary of the Invention

[0004] In order to overcome the above-mentioned defects of the prior art, the present invention provides a wiring optimization method and system for terminal blocks to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, the present invention provides the following technical solution:

[0006] A terminal block wiring optimization method includes:

[0007] S1. Obtain the conductor structure parameters of the wire to be crimped and the crimping cavity structure parameters of the terminal block;

[0008] S2. Identify whether the wire is a multi-strand stranded structure based on the conductor structure parameters;

[0009] S3. When the structure is identified as a multi-strand stranded wire, the physical response signal during the crimping process is analyzed in combination with the crimping cavity structural parameters to obtain the interlayer friction state characteristics, and the microstructure of the conductor after crimping is analyzed based on the crimping cavity structural parameters to obtain the interlayer deformation characteristics.

[0010] S4. Determine the pressing force application strategy based on the interlayer friction state characteristics and interlayer deformation characteristics. The pressing force application strategy includes the first pressing operation and the second pressing operation.

[0011] S5. After performing the first crimping operation, calculate the dispersion coefficient of the contact resistance value based on the contact resistance value of the conductor at different depths in the crimping cavity.

[0012] S6. When the discrete coefficient is greater than the preset threshold, adjust the crimping force application strategy of the second crimping operation and execute the second crimping operation.

[0013] In a preferred embodiment, the conductor structure parameters of the wire to be crimped include the conductor cross-sectional area, the number of strands, and the number of strand layers; the crimping cavity structure parameters of the terminal block include the crimping cavity width, the crimping cavity depth, and the crimping cavity cross-sectional shape.

[0014] In a preferred embodiment, identifying whether a wire belongs to a stranded wire structure based on conductor structure parameters includes:

[0015] When the number of strands is greater than one and the number of strand layers is greater than or equal to one, it is determined to be a multi-strand stranded structure.

[0016] When the number of strands is equal to one and the number of strands is equal to one layer, it is determined that it does not belong to a multi-strand stranded structure.

[0017] When the relationship between the number of strands and the cross-sectional area of ​​the conductor does not conform to the characteristics of stranded wire, it is identified as a single-strand conductor structure.

[0018] In a preferred embodiment, the physical response signal during the crimping process is analyzed in conjunction with the crimping cavity structural parameters to obtain the interlayer friction state characteristics, including:

[0019] The vibration signal acquisition area is determined based on the cross-sectional shape of the crimping cavity. Vibration signals in the acquisition area are collected during the crimping process. The Shannon entropy value is calculated based on the energy ratio of each frequency component of the vibration signal to characterize the interlayer friction state.

[0020] In a preferred embodiment, the microstructure of the conductor after crimping is analyzed based on the crimping cavity structural parameters to obtain interlayer deformation characteristics, including:

[0021] The three-dimensional scanning resolution is set according to the width and depth of the crimping cavity to obtain the three-dimensional structure of the conductor after crimping. The kurtosis coefficient is calculated based on the distribution data of the curvature radius of the metal fiber to characterize the interlayer deformation characteristics.

[0022] In a preferred embodiment, the crimping force application strategy includes a first crimping operation and a second crimping operation, comprising:

[0023] When the interlayer friction state characteristics are greater than the preset friction threshold and the interlayer deformation characteristics are less than the preset deformation threshold, the first step of the pressing operation is performed: the initial pressing force is applied to the first proportion of the target pressing force, and after being held for a first predetermined time, it is released to the second proportion of the initial pressing force.

[0024] When the interlayer deformation characteristics are greater than or equal to the preset deformation threshold, the second pressing operation is performed: the peak pressure is set at the third ratio of the initial pressing force, and the load is applied in stages according to the periodic waveform. The loading amplitude of each stage increases by the set step size in turn, and the interval between adjacent stages is the second predetermined time.

[0025] In a preferred embodiment, the preset friction threshold corresponds to the friction disorder critical value of the Shannon entropy value, and the preset deformation threshold corresponds to the deformation concentration critical value of the kurtosis coefficient.

[0026] The initial compression force is determined based on the first product coefficient of the conductor cross-sectional area and the material yield strength, and the target compression force is determined based on the second product coefficient of the conductor cross-sectional area and the material tensile strength.

[0027] In a preferred embodiment, after performing the first crimping operation, the dispersion coefficient of the contact resistance value is calculated based on the contact resistance values ​​of the conductor at different depths within the crimping cavity, including:

[0028] After the first crimping operation is completed, the contact resistance value of each depth layer is measured by resistance probes placed at different axial depths of the crimping cavity. The depth layer positions are divided equally according to the axial length of the conductor.

[0029] The standard deviation of the contact resistance value at each depth layer is divided by the average contact resistance value to obtain the coefficient of variation, which characterizes the uniformity of axial conductivity of the conductor.

[0030] The contact resistance value is measured under a stable condition where the pressure is released to a second proportional value of the initial crimping force, and the measuring current is controlled below a first proportional value of the conductor's rated current.

[0031] The number of depth layers is determined based on the ratio of conductor length to minimum effective measurement spacing, and the minimum effective measurement spacing is not less than the second ratio of the diameter of the resistance probe.

[0032] In a preferred embodiment, when the dispersion coefficient is greater than a preset threshold, the crimping force application strategy of the second crimping operation is adjusted and the second crimping operation is performed, including:

[0033] The crimping force compensation value is calculated based on the amount by which the dispersion coefficient exceeds the preset threshold. The crimping force compensation value is equal to the amount by which the crimping force compensation coefficient is multiplied. The crimping force compensation coefficient is related to the strain hardening characteristics of the conductor material.

[0034] The peak pressure in the second step of the crimping operation is increased by the third proportional value of the crimping force compensation value to form the adjusted peak pressure;

[0035] Keep the number of loading stages of the periodic waveform constant, and increase the set step size of the loading amplitude of each stage in sync with the ratio of the relay compensation value.

[0036] The second pressing operation is performed with the adjusted peak pressure and the adjusted loading amplitude, and the interval between adjacent loading stages is maintained at the second predetermined time.

[0037] The preset threshold is associated with the conductor's axial conductivity uniformity requirement, and the range of the compression force compensation coefficient is associated with the material's plastic deformation capacity.

[0038] On the other hand, the present invention provides a terminal block wiring optimization system, comprising:

[0039] The parameter acquisition module is used to acquire the conductor structure parameters of the wire to be crimped and the crimping cavity structure parameters of the terminal block;

[0040] The structural identification module is used to identify whether a conductor belongs to a multi-strand stranded structure based on conductor structural parameters.

[0041] The feature analysis module is used to analyze the physical response signal during the crimping process to obtain the interlayer friction state characteristics when the structure is identified as a multi-strand strand structure, and to analyze the conductor microstructure after crimping to obtain the interlayer deformation characteristics based on the crimping cavity structure parameters.

[0042] The strategy generation module is used to determine the pressing force application strategy based on the interlayer friction state characteristics and interlayer deformation characteristics. The pressing force application strategy includes a first pressing operation and a second pressing operation.

[0043] The performance evaluation module is used to calculate the coefficient of variation of the contact resistance value based on the contact resistance value of the conductor at different depths in the crimping cavity after performing the first crimping operation.

[0044] The dynamic control module is used to adjust the crimping force application strategy of the second crimping operation and execute the second crimping operation when the discrete coefficient is greater than the preset threshold.

[0045] Compared with the prior art, the present invention has the following beneficial effects:

[0046] 1. By accurately distinguishing the types of multi-stranded wires, the interlayer friction state characteristics and post-crimping micro-deformation characteristics of the crimping process are analyzed simultaneously. A mapping relationship between interlayer stress distribution and conductor deformation state is established, and a step-by-step crimping force application strategy is formulated. The first crimping operation is used to specifically alleviate the non-uniform stress between stranded wire layers. The second crimping operation dynamically corrects the crimping parameters based on discrete coefficient feedback, thereby suppressing the accumulation of micro-displacement of conductor layers from the root cause. This effectively blocks the path of reduced conductive area at the contact point under vibration and temperature cycling conditions, and significantly reduces the risk of hidden circuit breaks.

[0047] 2. The conductor depth layer contact resistance dispersion coefficient is used as the crimping quality evaluation index. Based on the crimping quality evaluation index, the crimping force application strategy of the second crimping operation is adjusted in real time to achieve online quantitative evaluation and real-time compensation of the conductor's axial conductivity, overcoming the defect of traditional static pull-out force test being insensitive to dynamic failure modes. The step-by-step crimping strategy ensures that the interlayer bonding state and conductivity uniformity of the stranded wire achieve a synergistic optimization effect that cannot be achieved by conventional single crimping through closed-loop control of interlayer feature analysis → dispersion coefficient feedback → dynamic correction of crimping force. Attached Figure Description

[0048] Figure 1 This is a flowchart of a terminal wiring optimization method according to the present invention;

[0049] Figure 2 This is a schematic diagram of the structure of a terminal block wiring optimization system according to the present invention. Detailed Implementation

[0050] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0051] Example 1: Figure 1 This invention provides a terminal block wiring optimization method, comprising:

[0052] S1. Obtain the conductor structure parameters of the wire to be crimped and the crimping cavity structure parameters of the terminal block;

[0053] S2. Identify whether the wire is a multi-strand stranded structure based on the conductor structure parameters;

[0054] S3. When the structure is identified as a multi-strand stranded wire, the physical response signal during the crimping process is analyzed in combination with the crimping cavity structural parameters to obtain the interlayer friction state characteristics, and the microstructure of the conductor after crimping is analyzed based on the crimping cavity structural parameters to obtain the interlayer deformation characteristics.

[0055] S4. Determine the pressing force application strategy based on the interlayer friction state characteristics and interlayer deformation characteristics. The pressing force application strategy includes the first pressing operation and the second pressing operation.

[0056] S5. After performing the first crimping operation, calculate the dispersion coefficient of the contact resistance value based on the contact resistance value of the conductor at different depths in the crimping cavity.

[0057] S6. When the discrete coefficient is greater than the preset threshold, adjust the crimping force application strategy of the second crimping operation and execute the second crimping operation.

[0058] S1. Obtain the conductor structure parameters of the wire to be crimped and the crimping cavity structure parameters of the terminal block. The specific implementation is as follows:

[0059] The conductor structural parameters were obtained using standard measuring tools. The conductor cross-sectional area was measured using a micrometer to measure the outer diameter of the exposed wire after the insulation layer was removed, and calculated according to the formula for a circular cross-section. The measurement process was repeated at three different axial positions of the wire, and the average value was taken. The unit of conductor cross-sectional area is square millimeters. The number of strands was obtained by visually counting the number of individual copper wires in the exposed wire using a high-magnification lens. When the diameter of the copper wire was less than 0.1 mm, an electron microscope was used to identify and count them at, for example, 20x magnification. The counting process covered the entire circumferential area of ​​the wire. The number of strands was determined based on the number of strands and the strand arrangement rules. When the number of strands was a single-layer structure, the number of strands was recorded as one layer. When the number of strands exceeded 7, the number of layers was identified according to the concentric layer twisting characteristics. The single strand in the center was counted as the first layer, the six outer strands evenly wrapped around were counted as the second layer, and every additional 12 strands thereafter were counted as a new layer.

[0060] The structural parameters of the crimping cavity are obtained using a contour projector. The width of the crimping cavity is measured as the minimum straight-line distance between the inner walls on both sides of the opening. The depth of the crimping cavity is measured as the vertical height from the lowest point of the bottom of the crimping cavity to the opening plane. Before measurement, the terminals are fixed to the measuring fixture and kept in a natural state. The shape of the crimping cavity cross-section is determined based on the contour characteristics of the crimping cavity cross-section. When the cross-section of the crimping cavity is flat at the bottom and vertical on both sides, it is U-shaped. When the cross-section of the crimping cavity slopes towards the bottom from both sides, it is V-shaped. When the cross-section of the crimping cavity has both flat and sloping sections, it is recorded as a composite type.

[0061] The conductor cross-sectional area measurement results have a corresponding verification relationship with the number of strands. When the quotient obtained by dividing the conductor cross-sectional area by the standard cross-sectional area of ​​a single copper wire exceeds the number of strands (e.g., ±5%), a remeasurement process is triggered. The measured values ​​of the crimp cavity width and depth are used to calculate the width-to-depth ratio parameter. The width-to-depth ratio is a dimensionless ratio obtained by dividing the crimp cavity width value by the crimp cavity depth value. This parameter is related to the sensor placement scheme in subsequent physical response signal analysis. The determination result of the crimp cavity cross-sectional shape directly affects the positioning rules of the microstructure analysis area. The microstructure analysis area of ​​a U-shaped crimp cavity is limited to a height range of, for example, 0.2 mm from the bottom of the crimp cavity, and the microstructure analysis area of ​​a V-shaped crimp cavity is limited to a radius range of, for example, 0.3 mm from the central axis of the crimp cavity.

[0062] During conductor cross-sectional area measurement, the influence of the conductor surface oxide layer must be eliminated. The conductor should be lightly sanded three times along the conductor axis with fine sandpaper until a metallic luster is exposed before measurement. When counting strands, if a strand is broken, the actual number of intact copper wires must be recorded; the remaining broken strands are not included in the strand count. When determining the number of strands, if an unconventional stranding structure is encountered, the number of layers should be recorded according to the actual number of concentric layers observed, with a permissible deviation of no more than 10% in the number of copper wires per layer. The width measurement of the crimp cavity should avoid the chamfered area at the opening of the crimp cavity; the width measurement should be performed 0.1 mm below the chamfer termination point. When measuring the depth of the crimp cavity, the probe contact pressure should be controlled below 0.5 N to prevent terminal deformation from causing measurement distortion. The cross-sectional shape of the crimp cavity is determined by obtaining a 50x magnified cross-sectional image using a contour projector. The shape is classified by comparing the angle between the straight segments of the crimp cavity sidewalls and the bottom baseline: an angle greater than 80 degrees is classified as U-shaped, and an angle less than 80 degrees is classified as V-shaped.

[0063] A matching verification mechanism exists between the number of stranded wire layers and the crimp cavity depth in the conductor structural parameters. An abnormal parameter warning is generated when the outer diameter of the conductor corresponding to the number of stranded wire layers exceeds the crimp cavity depth by 80% to 120%. All measurement data are recorded in the parameter database. The conductor cross-sectional area is retained to two decimal places, the number of stranded wires and layers is recorded as integers, and the crimp cavity width and depth are recorded with an accuracy of 0.01 mm. The crimp cavity cross-sectional shape is stored in text-coded form. The parameter acquisition process is performed under standard conditions of ambient temperature 23±2 degrees Celsius and relative humidity 45% to 55% to ensure the comparability of measurement results.

[0064] The conductor cross-sectional area is calculated using the formula: the conductor cross-sectional area equals pi multiplied by the square of the conductor radius, where the conductor radius is the arithmetic mean of three measurements. When identifying the number of strands, if an insulating varnish layer is present on the copper wire surface, it must be immersed in a 90°C sodium hydroxide solution for 30 seconds to remove the coating before counting. When determining the shape of the crimp cavity cross-section, if there is a circular arc transition feature, the intersection of the transition arc tangent and the bottom baseline is used as the measurement reference point. After a parameter anomaly warning is triggered, the measurement data must be manually reviewed; only after successful review can the subsequent processing flow begin. Measurement equipment calibration is performed before the first use each day. Micrometer calibration uses standard gauge blocks, and contour projector calibration uses a standard grid plate. Use is suspended when the calibration error exceeds 50% of the equipment accuracy. A correlation storage index is established between conductor structural parameters and crimp cavity structural parameters to ensure that corresponding parameters of the same conductor maintain a matching relationship in subsequent processing. For non-concentric layer arrangements such as bundled strands, the number of layers is recorded according to the actual number of layer interfaces, which are identified by the abrupt change in copper wire direction. When measuring the depth of the crimp cavity, if there is a sloping bottom structure, the lowest point of the bottom contour is taken as the measurement reference point. The width of the crimp cavity is measured repeatedly at three equidistant positions along the axial direction of the crimp cavity, and the minimum value is recorded as the final value. An operation log is generated for all parameter acquisition processes, including measurement timestamps, operator identification, equipment number, and environmental parameters. The log is retained for at least the product lifecycle. The verification formula for conductor cross-sectional area and strand count is: the strand count equals the conductor cross-sectional area divided by the cross-sectional area of ​​a single copper wire, multiplied by a fill factor, with the fill factor ranging from 0.85 to 0.95. The parameter database uses a relational data structure, and the conductor structure parameter table and the crimp cavity structure parameter table are linked through the terminal model field.

[0065] The rules for determining the cross-sectional shape of the crimping cavity have been updated to include a composite classification standard: when the bottom of the crimping cavity has a straight section exceeding 30% of its depth in length and the difference in inclination angle between the two side walls exceeds 5 degrees, it is recorded as a composite type. For stranded wire layer identification, for untwisted stranded structures, the number of layers is counted according to the actual layering position of the copper wires; the untwisted point is not considered an independent layer boundary. Measurement environment control is achieved through a constant temperature and humidity laboratory, with temperature fluctuations not exceeding 1 degree Celsius per hour and humidity fluctuations not exceeding 3% per hour. When measuring the conductor cross-sectional area, the conductor is kept naturally straight to avoid measurement errors caused by bending.

[0066] When using image recognition to count strands, the minimum copper wire recognition diameter is set to 0.05 mm at a 95% confidence level. The probe diameter for measuring the crimp cavity width should not exceed 0.2 mm to ensure access to narrow cavities. Parameter anomaly warnings are divided into two levels: Level 1 warnings allow manual confirmation and can be overridden if the measured value deviates from the theoretical value by less than 10%; Level 2 warnings force termination of the process if the deviation exceeds 10%. Calibration records are retained for the same period as the equipment's lifespan, and the equipment status label is updated after each calibration. The standard cross-sectional area of ​​a single copper wire is set based on the conductor material; the cross-sectional area of ​​a single copper wire is calculated by measuring the diameter of a single copper wire. The fill factor is set to 0.9 by default, and is adjusted to 0.85 when the copper content of the conductor is below 99%. The operation log format includes six required fields: timestamp, operation type, parameter name, measured value, equipment number, and ambient temperature and humidity. The database indexing rule is: automatic association between the same conductor batch number and the same terminal model. The microstructure analysis area of ​​the composite crimp cavity includes both U-shaped and V-shaped areas, which are located according to corresponding rules. During the strand count verification, if the measured value of the conductor outer diameter deviates from the theoretical calculated value of the strand count by more than 5%, the strand count verification program will be automatically started.

[0067] All measuring equipment has metrological calibration certificates, and the calibration cycle does not exceed 12 months. The parameter acquisition interface displays real-time environmental parameters, and a warning window pops up to pause the measurement when they exceed the standard range. When the range of three measurements of the conductor cross-sectional area exceeds 2% of the average value, a fourth supplementary measurement is automatically triggered. The number of strands and layers in the conductor structure parameters are verified a second time using a conductor specification and model lookup table, which is stored in the parameter database. The crimp cavity width and depth in the crimp cavity structure parameters are compared with the tolerance range indicated on the terminal design drawings after measurement; data exceeding the tolerance is marked as abnormal. After parameter acquisition, a parameter verification report is generated, including the measured values, standard values, deviation percentages, and verification conclusions for all measurement items.

[0068] S2. Identify whether the wire is a multi-strand stranded structure based on the conductor structure parameters, as follows:

[0069] The identification process performs logical judgments based on the number of strands and layers in the conductor's structural parameters. When the number of strands is greater than one and the number of layers is greater than or equal to one, the conductor is determined to be a multi-strand stranded structure. This judgment is based on the basic definition of multi-strand stranded wire: it consists of two or more independent copper wires twisted together, forming at least one stranded layer. When the number of strands is equal to one and the number of layers is equal to one, the conductor is determined not to be a multi-strand stranded structure; this corresponds to a single-core solid conductor. The correspondence between the number of strands and the conductor cross-sectional area is verified by calculating the copper wire fill density. The fill density is equal to the number of strands multiplied by the standard cross-sectional area of ​​a single copper wire, then divided by the conductor cross-sectional area. When the calculated fill density exceeds the standard range of, for example, 0.85 to 0.95, the conductor is identified as having an abnormal single-strand conductor structure.

[0070] The standard cross-sectional area of ​​a single-strand copper wire required for filling density calculation is obtained by querying a material parameter library. This library stores the nominal diameter of a single-strand copper wire, indexed by conductor specification. The standard range, for example, 0.85 to 0.95, is set based on the allowable gap ratio and compression deformation rate of the copper wires in the conductor manufacturing process. After an anomaly is identified, a data verification procedure is initiated. This procedure re-accesses the original measurement data for the conductor cross-sectional area and the number of strands. When the difference between the two verification results exceeds, for example, 5%, a manual intervention process is activated. The judgment result is output to the structure identification field: multi-strand stranded structures are recorded as code "1", non-multi-strand stranded structures as code "0", and single-strand conductor structure anomalies are recorded as code "E".

[0071] The specific interpretation of "one or more strands" is: the condition is met when the measured value of the strand count is a positive integer. During the judgment process, the integer characteristics of the strand count and strand count are verified; non-integer values ​​automatically trigger parameter retesting. An additional rule for identifying single-strand conductor structural anomalies is: when the measured strand count is one but the conductor cross-sectional area exceeds the standard cross-sectional area of ​​a single copper wire, for example, 150%, it is directly judged as a single-strand conductor structural anomaly. The structural identification field is bound to the conductor structural parameters to ensure that the original parameters can be queried in subsequent processing stages. The manual intervention process requires operators to use an electron microscope at, for example, 100x magnification to verify the conductor cross-sectional morphology. When a single metal body without strand characteristics is observed, the single-strand conductor structural anomaly identification is confirmed to be valid.

[0072] The material parameter library update mechanism is as follows: When each batch of conductors enters the warehouse, three samples are randomly selected to measure the diameter of a single strand of copper wire, and the average of these measurements is used to update the corresponding specification's recorded value. The tolerance mechanism for standard range boundary values, such as 0.85 and 0.95, is as follows: when the ambient temperature exceeds standard conditions, the range boundary is adjusted by a proportional coefficient of, for example, 0.002 per degree Celsius. During data verification, the original measuring equipment is locked, and the measurement is repeated three times under the same environmental conditions, with the median value taken. The structural identification code "E" triggers a special processing channel that skips subsequent crimping optimization steps. The strand count verification adds an axial uniformity check; layer count data is sampled from three equidistant cross-sections of the conductor, and if the layer count is inconsistent, the value with the highest frequency is used.

[0073] The exception handling for the judgment logic includes: when the number of strands is greater than one but the number of strand layers is recorded as zero, the number of strand layers is automatically corrected to one and a data correction mark is added. The priority of single-strand conductor structural anomaly identification is higher than the regular judgment result. The standard range temperature compensation formula is: the adjusted lower limit equals 0.85 minus the proportional coefficient multiplied by the temperature difference value; the adjusted upper limit equals 0.95 minus the proportional coefficient multiplied by the temperature difference value, where the temperature difference value is the actual temperature minus 23 degrees Celsius. Operation records of manual intervention processes are stored in the tracking system, including the intervention reason and review result. The structural identification code is transmitted to the next process with a timestamp. The standard cross-sectional area of ​​a single-strand copper wire in the material parameter library is calculated from the nominal diameter value using the formula: pi multiplied by the square of the radius.

[0074] Wires in an abnormal state are crimped using preset universal crimping parameters. The judgment result is stored in association with the wire batch information, forming a complete quality traceability chain. When verifying the number of strands, the standard cross-sectional area value of the same batch of wires is used for calculation to avoid misjudgments due to batch differences. Ambient temperature compensation is only enabled when the absolute value of the temperature difference exceeds, for example, 5 degrees Celsius. Conductor cross-sectional area verification measurement must be performed in a clean area after the surface oxide layer has been removed. Data correction markers are indicated by the additional character "A" in the structure identifier field, without affecting the parsing logic of the main code. All judgment rules are written into a configurable parameter table, supporting dynamic adjustment of thresholds based on wire type.

[0075] The physical response signals during the crimping process are analyzed by combining the structural parameters of the crimping cavity to obtain the characteristics of the interlayer friction state. The specific implementation is as follows:

[0076] When the structure is identified as a multi-strand stranded wire, the physical response signal during the crimping process is analyzed in conjunction with the structural parameters of the crimping cavity to obtain the characteristics of the interlayer friction state. The vibration signal acquisition area is determined based on the cross-sectional shape of the crimping cavity, which includes U-shaped, V-shaped, or composite structures. The vibration signal acquisition area corresponding to the U-shaped cross-section is located in a rectangular area extending, for example, 3 mm on each side of the center line at the bottom of the crimping cavity, while the vibration signal acquisition area corresponding to the V-shaped cross-section is located in a circular area with a radius of, for example, 2 mm around the intersection of the two side walls.

[0077] During the crimping process, vibration signals in the area are collected using an accelerometer. The accelerometer is installed, for example, 1 mm from the surface of the conductor crimping area, and the sampling frequency is set, for example, to 20 kHz to cover the crimping impact frequency band. The collected raw vibration signals are first processed by a bandpass filter from 0.5 kHz to 5 kHz. The lower limit of the filter is set, for example, twice the fundamental frequency of the crimping equipment, and the upper limit is set, for example, 1.2 times the main crimping impact frequency. The main crimping impact frequency is determined through pre-experimental spectrum analysis. The filtered vibration signal is converted into a frequency domain signal using a fast Fourier transform, with a frequency resolution set, for example, to 50 Hz. The energy value of each frequency component is calculated, and the energy percentage of each frequency component is obtained by dividing the energy value of that component by the total energy value. The Shannon entropy is calculated according to the formula as the negative of the sum of the products of the energy percentage of each frequency component and its base-2 logarithm. The frequency component range is limited to the effective frequency band, which is defined as the frequency range where the energy value exceeds the maximum energy value, for example, by 10%. The Shannon entropy value is used to characterize the interlayer friction state. The correspondence between the cross-sectional shape of the crimping cavity and the acquisition area is stored in a preset mapping table. The mapping table is established by finite element stress simulation to determine the active metal flow zone during the crimping process. The accelerometer sensitivity calibration is performed within the crimping temperature range, with a temperature compensation coefficient of, for example, 0.05% per degree Celsius. The positioning accuracy of the vibration signal acquisition area is controlled within, for example, 0.1 mm by a laser positioning device.

[0078] Shannon entropy quantifies the disorder of the frequency domain energy distribution of vibration signals to characterize the interlayer friction state. Specifically, during crimping, when interlayer friction intensifies, the proportion of high-frequency vibration components increases, leading to a dispersed frequency domain energy distribution and an increase in Shannon entropy. Conversely, when friction is uniform, energy is concentrated near the fundamental frequency, and the entropy decreases. For example, the normal crimping entropy range is 2.3-2.8 bits. When it exceeds 3.0 bits, it indicates disordered interlayer friction. This threshold was determined through destructive testing of 50 samples. Each 0.1-bit increase in entropy corresponds to a 15% increase in microscopic wear debris.

[0079] The microstructure of the conductor after crimping is analyzed based on the structural parameters of the crimping cavity to obtain the interlayer deformation characteristics. The specific implementation is as follows:

[0080] When the structure is identified as a multi-strand stranded wire, the microstructure of the conductor after crimping is analyzed based on the crimping cavity structural parameters to obtain interlayer deformation characteristics. The three-dimensional scanning resolution is set according to the crimping cavity width and crimping cavity depth. The lateral resolution is set to the crimping cavity width divided by, for example, 200, and the longitudinal resolution is set to the crimping cavity depth divided by, for example, 150. The minimum resolution is not less than, for example, 1 micrometer. The divisor parameter in the resolution setting is determined based on the optical diffraction limit and the minimum identifiable feature size.

[0081] The three-dimensional structure of the conductor after crimping was acquired using a laser confocal microscope at a set resolution. The scanning area covered the entire crimping deformation zone. The three-dimensional point cloud data was smoothed using a Gaussian filter, with the Gaussian filter kernel size set to, for example, three times the resolution value, and the standard deviation set to, for example, one-sixth of the kernel size. Based on the three-dimensional structural data, the curvature radius distribution data of the metal fibers was extracted. First, the Otsu algorithm was used to automatically determine the grayscale threshold for segmenting the metal fibers. Then, the local curvature radius was calculated at set intervals along the fiber centerline. The curvature radius was calculated using the three-point method as the radius of the circle formed by three adjacent points. The three-point spacing was set to, for example, 0.5 to 2 times the fiber diameter. When the fiber diameter was less than, for example, 50 micrometers, a spacing of 0.5 times was used, and when it was greater than 50 micrometers, a spacing of 2 times was used. The distribution data of the radius of curvature of metal fibers consists of a dataset of the radius of curvature values ​​of all sampling points. The kurtosis coefficient is calculated from this dataset using the formula: fourth central moment divided by the fourth power of the standard deviation, then subtracted by 3. Here, the fourth central moment is the average of the fourth power of the difference between the radius of curvature values ​​and their mean, and the standard deviation is the square root of the average of the squares of the differences between the radius of curvature values ​​and their mean. Before calculation, the distribution data undergoes a normality test. When the absolute value of skewness is greater than, for example, 0.5, the median and interquartile range are used instead of the mean and standard deviation for standardization. Data points exceeding, for example, five times the diameter of a single filament are automatically discarded during radius of curvature calculation. This kurtosis coefficient is used to characterize interlayer deformation. Before 3D scanning, the conductor sample is ultrasonically cleaned with anhydrous ethanol for, for example, 5 minutes to remove the oxide layer and oil.

[0082] The kurtosis coefficient characterizes the concentration of interlaminar deformation by quantifying the peak characteristics of the radius of curvature distribution of metal fibers. When the compression force distribution is uneven, excessive bending of local fibers leads to extreme minimum values ​​in the radius of curvature distribution, resulting in an increased kurtosis coefficient; conversely, when the deformation is uniform, the distribution approaches a normal distribution, and the kurtosis approaches 0. For example, the kurtosis coefficient of a qualified compression body is between -0.5 and 0.5. A value exceeding 1.0 indicates a risk of deformation concentration. This correlation is verified by X-ray tomography. Every 0.1 increase in the kurtosis coefficient corresponds to a 10% decrease in fatigue life. The critical value of 1.0 is set based on the fracture threshold of 100,000 vibration tests.

[0083] The measured values ​​of the crimping cavity width and depth were obtained using the contour projector in step S1. The classification results of the crimping cavity cross-sectional shape were derived from the geometric feature matching library in step S1. The lower limit of the bandpass filter range was calculated as the fundamental frequency of the crimping device multiplied by 2, and the upper limit was calculated as the crimping impact frequency multiplied by 1.2. The fundamental frequency of the crimping device was obtained from the parameters on the device nameplate, and the crimping impact frequency was determined by the average peak value of 10 sets of samples collected in a pre-experiment. In the 3D scanning resolution setting, the divisor 200 corresponding to the crimping cavity width ensured that the lateral field of view covered the conductor width and the pixel size was less than one-third of the minimum fiber diameter. The divisor 150 corresponding to the crimping cavity depth ensured that the longitudinal scanning depth covered the thickness of the crimping deformation zone and the tomographic interval was less than half of the fiber spacing. Fiber centerline extraction was achieved using a skeletonization algorithm. The number of skeletonization iterations was set to 1.5 times the fiber width divided by the pixel size. The fiber width was measured in the 3D structure using grayscale projection. Interlayer friction state characteristics and interlayer deformation characteristics are stored by binding them with timestamps and conductor numbers to form a quality record chain for the pressing process. All parameter setting rules are written into a configurable parameter table, which is stored in non-volatile memory.

[0084] Step S3 analyzes the frequency domain energy distribution of the vibration signal using Shannon entropy analysis. Compared to traditional time-domain amplitude monitoring (such as RMS or peak value detection), this method is more sensitive to capturing the chaotic characteristics of interlayer friction and avoids misjudgments caused by changes in crimping speed. Furthermore, dynamically setting the 3D scanning resolution based on the crimping cavity size improves detection efficiency while maintaining the accuracy of microscopic feature capture, compared to fixed-resolution scanning, thus avoiding resource waste caused by over-scanning. The calculation of the kurtosis coefficient of the metal fiber curvature radius replaces manual microscopic observation, quantitatively assessing the deformation concentration. This combination of methods overcomes the shortcomings of traditional crimping quality assessment, such as reliance on empirical thresholds, strong subjectivity in microscopic observation, and low detection efficiency. Moreover, all parameter settings are strongly correlated with the crimping cavity structure, ensuring adaptability to conductors of different specifications.

[0085] S4. Determine the compression force application strategy based on the interlayer friction state characteristics and interlayer deformation characteristics. The compression force application strategy includes a first compression operation and a second compression operation, and the specific implementation is as follows:

[0086] When determining the pressure application strategy based on interlayer friction state characteristics and interlayer deformation characteristics, the interlayer friction state characteristics specifically refer to the Shannon entropy value obtained in step S3, and the interlayer deformation characteristics specifically refer to the kurtosis coefficient obtained in step S3. The preset friction threshold is set as the Shannon entropy critical value characterizing the friction disorder state. This critical value is derived from the destructive test results of multiple sets of samples. When the Shannon entropy value reaches, for example, 3.0, it corresponds to a critical state where the density of micro-wear debris between conductor layers exceeds 500 particles per square millimeter.

[0087] The preset deformation threshold is set as the critical value of the kurtosis coefficient, which characterizes the deformation concentration state. This critical value is derived from long-term vibration fatigue test data. When the kurtosis coefficient reaches, for example, 1.0, it corresponds to the risk threshold of conductor fracture under 100,000 cycles of loading. When the real-time Shannon entropy value is greater than the preset friction threshold and the real-time kurtosis coefficient is less than the preset deformation threshold, the first step of the crimping operation is performed: the initial crimping force is calculated by multiplying the conductor cross-sectional area by the material yield strength by a first product coefficient. The conductor cross-sectional area is the real-time value measured by the profile projector in step S1, and the material yield strength is taken from the nominal value recorded in the conductor material technical manual. The first product coefficient is set to, for example, 0.7 based on the slope of the stress-strain curve of the material in the plastic deformation stage. The target crimping force is calculated by multiplying the conductor cross-sectional area by the material tensile strength by a second product coefficient. The tensile strength of the material is also taken from the nominal value recorded in the material technical handbook. The second product coefficient is set to, for example, 0.9 based on the critical stress value at which the material necking phenomenon occurs. The applied compression force is linearly increased from the initial compression force to the target compression force at a first proportional value, which is set to, for example, 80% based on the metal fiber filling rate requirement. This pressure state is maintained for a first predetermined time, which is set to, for example, 5 seconds based on the creep relaxation characteristics of copper-aluminum alloys. Then the pressure is released to a second proportional value of the initial compression force, which is set to, for example, 50% based on the minimum pressure to maintain the basic constraint force between conductor layers.

[0088] When the real-time acquired kurtosis coefficient is greater than or equal to the preset deformation threshold, the second step of the pressing operation is executed: the peak pressure is set to the third proportion of the initial pressing force, and the third proportion is set to, for example, 120% based on the strain hardening coefficient of the conductor material; the loading is performed in stages according to a periodic waveform, specifically a sine waveform to adapt to the dynamic response characteristics of the hydraulic actuator; the total number of stage loadings is set to three to meet the balance requirements of stress relaxation and processing efficiency; the loading amplitude of each stage is increased sequentially by a set step size, which is dynamically adjusted according to the residual stress value fed back by the installed strain sensor. The initial loading amplitude is set to, for example, 30% of the peak pressure, and the subsequent loading amplitude increases by, for example, 15% compared to the previous one; the interval between adjacent loading stages is a second predetermined time, which is determined by monitoring the relaxation time required for plastic deformation stabilization and is, for example, 2 seconds. During the pressing force control process, the updated value of the conductor cross-sectional area is acquired in real time through the configured online measuring device, and the material yield strength and tensile strength parameters are compensated based on the data collected by the arranged temperature sensor. The temperature compensation coefficient is determined by combining the material's thermal expansion coefficient and elastic modulus temperature change rate and is, for example, 0.5% per degree Celsius.

[0089] If the material technical manual does not provide strength parameters, the yield strength and tensile strength measured by tensile tests of the same batch of conductor samples at room temperature are used instead. During staged loading, if the residual stress exceeds, for example, 90% of the conductor material's yield strength, the subsequent loading increment is automatically reduced to, for example, 5%. When the temperature sensor fails, a fixed temperature compensation mode is switched to, with the fixed compensation value set to, for example, 0.3% per degree Celsius. The first product coefficient is set from 0.6 to 0.8 based on the material's plastic deformation capacity, and the second product coefficient is set from 0.85 to 0.95 based on the material's elongation. All proportional values ​​are adjusted in increments not exceeding 5% of the initial value. The sinusoidal loading frequency is set, for example, 0.5 Hz based on the ratio of the hydraulic system's maximum flow rate to the cylinder volume, and the trough pressure value is not less than 40% of the initial pressing force to maintain interlayer contact.

[0090] S5. After performing the first crimping operation, calculate the dispersion coefficient of the contact resistance value based on the contact resistance value of the conductor at different depths within the crimping cavity. The specific implementation is as follows:

[0091] During the first crimping operation, the crimping force application strategy defined in step S4 is fully implemented: the initial crimping force is linearly increased to a first proportion of the target crimping force, held for a first predetermined duration, and then released to a second proportion of the initial crimping force. After this operation, contact resistance measurement is initiated when the pressure stabilizes at the second proportion of the initial crimping force. This stable state is confirmed by the pressure sensor reading fluctuation being less than 1% of the initial crimping force for, for example, 2 seconds. The axial depth layers of the crimping cavity are divided based on equal spacing of the conductor axial length, which is obtained in real time using a laser rangefinder with a measurement accuracy of, for example, 0.1 mm. The number of depth layers is calculated by dividing the conductor axial length by the minimum effective measurement spacing. The minimum effective measurement spacing is set to a second proportion of the resistance probe diameter. The resistance probe diameter is selected as, for example, 0.5 mm according to the International Electrotechnical Commission (IEC) 60512 standard, and the second proportion is set as, for example, 1.5 times based on the probe insulation layer thickness and electric field interference protection requirements, thus determining the minimum effective measurement spacing to be, for example, 0.75 mm. When the conductor axial length is, for example, 150 mm, the theoretical number of layers is 150 divided by 0.75, which equals 200 layers. In actual implementation, the number of layers is adjusted to the maximum value supported by the equipment, such as 128 layers, according to the physical space limitations of the crimping cavity.

[0092] The contact resistance value of each depth layer is measured using a multi-point resistance probe array embedded in the wall of the crimping cavity. The probes are evenly spaced along the axial direction, with the distance between adjacent probes equal to the axial length of the conductor divided by the number of depth layers. The measured current value is controlled below a first proportion of the conductor's rated current. The rated current is calculated based on the conductor's cross-sectional area and the material's conductivity. The conductor's cross-sectional area is the real-time value measured using a profile projector, and the material conductivity is taken from a nominal value stored in a material database. The first proportion is set, for example, to 10%, based on the critical condition of measurement drift caused by the Joule heating effect. The contact resistance measurement uses a four-wire Kelvin connection method, eliminating conductor resistance errors through independent current and voltage leads. Three data acquisitions are performed for each depth layer, each lasting for, for example, 10 milliseconds. The arithmetic mean of the three measurements is taken as the contact resistance value of that layer.

[0093] After obtaining the contact resistance values ​​for all depth layers, the coefficient of variation is calculated: first, the arithmetic mean of the contact resistance values ​​for all depth layers is calculated; then, the standard deviation of each layer's contact resistance value from the arithmetic mean is calculated; finally, the standard deviation is divided by the arithmetic mean to obtain the coefficient of variation. This coefficient of variation is used to characterize the axial conductivity uniformity of the conductor. When the coefficient of variation is less than the allowable fluctuation range of the conductor material's conductivity, it is considered uniform. The allowable fluctuation range of the material's conductivity is set, for example, ±5%, based on the sampling and testing results of the same batch of materials. If a single-point measurement value exceeds, for example, ±50% of the arithmetic mean, a remeasurement of that point is automatically triggered. The maximum number of remeasurements is three. If the limit is still exceeded, the data at that point is marked as an outlier and removed from the calculation.

[0094] The dynamic adjustment rule for the number of depth layer divisions is as follows: when the feedback conductor axial length change exceeds 5% of the initial value, the minimum effective measurement spacing and the number of divisions are recalculated. During recalculation, the minimum effective measurement spacing remains the same as the second proportional value of the probe diameter, for example, 1.5 times the initial value. The measurement system performs automatic calibration upon each startup: a standard resistance module with a standard resistance value of, for example, 1 milliohm is installed at a fixed position in the crimping cavity. If the measurement result deviates from the standard value by, for example, ±0.5%, the probe cleaning procedure is initiated. The cleaning method involves spraying anhydrous ethanol and purging with inert gas for drying.

[0095] S6. When the dispersion coefficient is greater than the preset threshold, adjust the crimping force application strategy of the second crimping operation and execute the second crimping operation. The specific implementation is as follows:

[0096] When the coefficient of variation calculated in step S5 exceeds a preset threshold, the adjustment process for the second step of the crimping operation is initiated. The preset threshold is set based on the conductor's axial conductivity uniformity requirements. In practice, the coefficient of variation records for the same specification conductor in step S5 are retrieved from the historical process database, and the statistical distribution, for example, the 95th percentile value, is taken as the threshold reference value. The determination of the crimping force compensation coefficient is related to the strain hardening characteristics of the conductor material. The strain hardening characteristics are taken from the stress-strain curve stored in the material database in step S2. The processing unit calculates the rate of change of the curve slope during the plastic deformation stage. For example, for an aluminum alloy conductor, a slope value of 0.25 at a strain of 0.2 corresponds to a compensation coefficient of 0.15, and for a copper conductor, a slope value of 0.15 corresponds to a compensation coefficient of 0.25.

[0097] The calculation process for the pressure compensation value is as follows: First, calculate the excess amount by subtracting the preset threshold from the dispersion coefficient. For example, when the dispersion coefficient is 0.12 and the preset threshold is 0.08, the excess amount is 0.04. Multiply the excess amount by the pressure compensation coefficient to obtain the pressure compensation value. For example, multiplying the excess amount of 0.04 by the aluminum alloy compensation coefficient of 0.15 yields a compensation value of 0.006 kN. The dimensions of this value are consistent with the pressure unit. If the calculated compensation value exceeds the initial peak pressure by, for example, 5%, then the upper limit of 5% of the initial peak pressure is taken.

[0098] The adjustment implementation of the second step of the crimping operation includes: increasing the third proportional value of the peak pressure defined in step S4 by the aforementioned crimping force compensation value. The third proportional value of the peak pressure is initially set to, for example, 80% of the target crimping force in step S4, and the adjustment results in a new peak pressure value. The increment step size of the loading amplitude in each stage is adjusted synchronously. The adjustment method is to multiply the original set step size by the ratio of the compensation value to the initial set step size. For example, if the original set step size is 0.002 kN and the compensation value is 0.006 kN, the adjustment coefficient is 0.006 divided by 0.002, which equals 3, and the new set step size is 0.006 kN. The number of stage loading operations strictly remains unchanged from the initial value defined in step S4, and the interval between adjacent loading stages remains the second predetermined duration set in step S4, which is, for example, 100 milliseconds.

[0099] When performing the adjusted second-step crimping operation, the crimping force is applied strictly according to the periodic waveform pattern defined in step S4: starting from the initial crimping force, it is gradually loaded in stages to the adjusted peak pressure, with each stage increasing the adjusted set step size. For example, if the original operation contained 10 loading stages and the initial set step size was 0.002 kN, the adjusted operation still has 10 stages, but the set step size is increased to 0.006 kN, and the peak pressure increases from 8 kN to 8.006 kN. The pressure sensor monitors the pressure value of each stage in real time. When the measured pressure deviates from the theoretical value by more than, for example, ±5% of the adjusted set step size, the current stage is reloaded, with a maximum of, for example, 3 reloads.

[0100] The correlation of material plastic deformation capacity is achieved through dynamic adjustment of the compensation coefficient: when the fracture elongation recorded in the material database in step S2 is lower than, for example, 15%, the compensation coefficient is multiplied by a reduction factor of 0.5; when the yield strength is higher than, for example, 200 MPa, the compensation coefficient is multiplied by a gain factor of 1.2. The adjusted pressing operation data and the discrete coefficient are mapped to the process knowledge base, and the stored fields include the compensation value calculation parameters, the actual peak pressure, and the set step size adjustment ratio.

[0101] The technical solution formed by steps S1 to S6 is achieved through dynamic coupling and closed-loop control of multi-dimensional parameters. Specifically, the precise values ​​of conductor axial length and cross-sectional area obtained in step S1 are dynamically matched with the number of crimping stages and the step size of loading amplitude set in step S4, rather than using a fixed segmentation strategy. The discrete coefficients calculated based on the contact resistance of the axial depth layer in step S5 serve as real-time feedback signals for crimping force compensation in step S6. This feedback mechanism, by associating the strain hardening characteristics and plastic deformation capacity in the material database of step S2, enables the crimping force compensation coefficient to be adaptively adjusted according to material properties. When adjusting the crimping force application strategy, step S6 simultaneously maintains the number of periodic waveform stages and the interval between adjacent stages defined in step S4, and only corrects the peak pressure and stage increase proportionally through the compensation value. This maintains process stability while precisely improving the interface bonding quality, solving the technical problem of the disconnect between material properties and crimping parameters in traditional processes.

[0102] Example 2: Figure 2 A schematic diagram of a terminal block wiring optimization system according to the present invention is provided. The terminal block wiring optimization system includes:

[0103] The parameter acquisition module is used to acquire the conductor structure parameters of the wire to be crimped and the crimping cavity structure parameters of the terminal block;

[0104] The structural identification module is used to identify whether a conductor belongs to a multi-strand stranded structure based on conductor structural parameters.

[0105] The feature analysis module is used to analyze the physical response signal during the crimping process to obtain the interlayer friction state characteristics when the structure is identified as a multi-strand strand structure, and to analyze the conductor microstructure after crimping to obtain the interlayer deformation characteristics based on the crimping cavity structure parameters.

[0106] The strategy generation module is used to determine the pressing force application strategy based on the interlayer friction state characteristics and interlayer deformation characteristics. The pressing force application strategy includes a first pressing operation and a second pressing operation.

[0107] The performance evaluation module is used to calculate the coefficient of variation of the contact resistance value based on the contact resistance value of the conductor at different depths in the crimping cavity after performing the first crimping operation.

[0108] The dynamic control module is used to adjust the crimping force application strategy of the second crimping operation and execute the second crimping operation when the discrete coefficient is greater than the preset threshold.

[0109] All calculations involved in the embodiments are dimensionless numerical calculations, and the preset parameters and thresholds in the calculations are set by those skilled in the art according to the actual situation.

[0110] It should be noted that this invention can be deployed on the device itself to realize embedded applications, or it can run on a PC or other terminal with a user interface, thereby meeting various hardware environments and usage requirements.

[0111] The above embodiments can be implemented, in whole or in part, by software, hardware, firmware, or any other combination thereof. When implemented using software, the above embodiments can be implemented, in whole or in part, as a computer program product. The computer program product includes one or more computer instructions or computer programs. When the computer instructions or computer programs are loaded or executed on a computer, all or part of the processes or functions described in the embodiments of this application are generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, the computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via wired (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium can be any available medium that a computer can access or a data storage device such as a server or data center that includes one or more sets of available media. The available medium can be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium. The semiconductor medium can be a solid-state drive.

[0112] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and modules described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0113] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of modules is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple modules or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or modules may be electrical, mechanical, or other forms.

[0114] The modules described as separate components may or may not be physically separate. The components shown as modules may or may not be physical modules; they may be located in one place or distributed across multiple network modules. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs.

[0115] In addition, the functional modules in the various embodiments of this application can be integrated into one processing module, or each module can exist physically separately, or two or more modules can be integrated into one module.

[0116] If the aforementioned functions are implemented as software functional modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0117] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

[0118] In conclusion, the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method of wire termination optimization, comprising: include: S1. Obtain the conductor structure parameters of the wire to be crimped and the crimping cavity structure parameters of the terminal block; S2. Identify whether the wire is a multi-strand stranded structure based on the conductor structure parameters; S3. When the structure is identified as a multi-strand stranded wire, the physical response signal during the crimping process is analyzed in combination with the crimping cavity structural parameters to obtain the interlayer friction state characteristics, and the microstructure of the conductor after crimping is analyzed based on the crimping cavity structural parameters to obtain the interlayer deformation characteristics. S4. Determine the pressing force application strategy based on the interlayer friction state characteristics and interlayer deformation characteristics. The pressing force application strategy includes a first pressing operation and a second pressing operation, including: When the interlayer friction state characteristics are greater than the preset friction threshold and the interlayer deformation characteristics are less than the preset deformation threshold, the first step of the pressing operation is performed: the initial pressing force is applied to the first proportion of the target pressing force, and after being held for a first predetermined time, it is released to the second proportion of the initial pressing force. When the interlayer deformation characteristics are greater than or equal to the preset deformation threshold, the second step of the pressing operation is performed: the peak pressure is set at the third ratio of the initial pressing force, and the load is applied in stages according to the periodic waveform. The loading amplitude of each stage is increased by the set step size in turn, and the interval between adjacent stages is the second predetermined time. S5. After performing the first crimping operation, calculate the dispersion coefficient of the contact resistance value based on the contact resistance values ​​of the conductor at different depths within the crimping cavity, including: After the first crimping operation is completed, the contact resistance value of each depth layer is measured by resistance probes placed at different axial depths of the crimping cavity. The depth layer positions are divided equally according to the axial length of the conductor. The standard deviation of the contact resistance value at each depth layer is divided by the average contact resistance value to obtain the coefficient of variation, which characterizes the uniformity of axial conductivity of the conductor. The contact resistance value is measured under a stable condition where the pressure is released to a second proportional value of the initial crimping force, and the measuring current is controlled below a first proportional value of the conductor's rated current. The number of depth layers is determined based on the ratio of conductor length to minimum effective measurement spacing, and the minimum effective measurement spacing is not less than the second ratio of the resistor probe diameter; S6. When the dispersion coefficient is greater than the preset threshold, adjust the crimping force application strategy of the second crimping operation and execute the second crimping operation, including: The crimping force compensation value is calculated based on the amount by which the dispersion coefficient exceeds the preset threshold. The crimping force compensation value is equal to the amount by which the crimping force compensation coefficient is multiplied. The crimping force compensation coefficient is related to the strain hardening characteristics of the conductor material. The peak pressure in the second step of the crimping operation is increased by the third proportional value of the crimping force compensation value to form the adjusted peak pressure; Keep the number of loading stages of the periodic waveform constant, and increase the set step size of the loading amplitude of each stage in sync with the ratio of the relay compensation value. The second pressing operation is performed with the adjusted peak pressure and the adjusted loading amplitude, and the interval between adjacent loading stages is maintained at the second predetermined time. The preset threshold is associated with the conductor's axial conductivity uniformity requirement, and the range of the compression force compensation coefficient is associated with the material's plastic deformation capacity.

2. A method of optimizing wiring of a wiring terminal according to claim 1, wherein Obtaining the conductor structure parameters of the wire to be crimped includes the conductor cross-sectional area, number of strands, and number of strand layers; obtaining the crimping cavity structure parameters of the terminal includes the crimping cavity width, crimping cavity depth, and crimping cavity cross-sectional shape.

3. The method of claim 1, wherein, Identifying whether a wire is a stranded wire structure based on conductor structure parameters includes: When the number of strands is greater than one and the number of strand layers is greater than or equal to one, it is determined to be a multi-strand stranded structure. When the number of strands is equal to one and the number of strands is equal to one layer, it is determined that it does not belong to a multi-strand stranded structure. When the relationship between the number of strands and the cross-sectional area of ​​the conductor does not conform to the characteristics of stranded wire, it is identified as a single-strand conductor structure.

4. The method of claim 1, wherein, By analyzing the physical response signals during the crimping process in conjunction with the structural parameters of the crimping cavity, the characteristics of the interlayer friction state are obtained, including: The vibration signal acquisition area is determined based on the cross-sectional shape of the crimping cavity. Vibration signals in the acquisition area are collected during the crimping process. The Shannon entropy value is calculated based on the energy ratio of each frequency component of the vibration signal to characterize the interlayer friction state.

5. The method of claim 1, wherein, Based on the analysis of the structural parameters of the crimp cavity, the microstructure of the conductor after crimping is obtained to obtain the interlayer deformation characteristics, including: The three-dimensional scanning resolution is set according to the width and depth of the crimping cavity to obtain the three-dimensional structure of the conductor after crimping. The kurtosis coefficient is calculated based on the distribution data of the curvature radius of the metal fiber to characterize the interlayer deformation characteristics.

6. The terminal block wiring optimization method according to claim 1, characterized in that, The preset friction threshold corresponds to the friction disorder critical value of Shannon entropy, and the preset deformation threshold corresponds to the deformation concentration critical value of kurtosis coefficient. The initial compression force is determined based on the first product coefficient of the conductor cross-sectional area and the material yield strength, and the target compression force is determined based on the second product coefficient of the conductor cross-sectional area and the material tensile strength.

7. A terminal connection optimization system for implementing the method of any one of claims 1-6, characterized by include: The parameter acquisition module is used to acquire the conductor structure parameters of the wire to be crimped and the crimping cavity structure parameters of the terminal block; The structural identification module is used to identify whether a conductor belongs to a multi-strand stranded structure based on conductor structural parameters. The feature analysis module is used to analyze the physical response signal during the crimping process to obtain the interlayer friction state characteristics when the structure is identified as a multi-strand strand structure, and to analyze the conductor microstructure after crimping to obtain the interlayer deformation characteristics based on the crimping cavity structure parameters. The strategy generation module is used to determine the pressing force application strategy based on the interlayer friction state characteristics and interlayer deformation characteristics. The pressing force application strategy includes a first pressing operation and a second pressing operation. The performance evaluation module is used to calculate the coefficient of variation of the contact resistance value based on the contact resistance value of the conductor at different depths in the crimping cavity after performing the first crimping operation. The dynamic control module is used to adjust the crimping force application strategy of the second crimping operation and execute the second crimping operation when the discrete coefficient is greater than the preset threshold.

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