Substrate, deposition material molded body, and method for producing deposition material molded body
By setting a porous stress-absorbing layer on the substrate, the problem of cracking during the cooling process of SiC layer was solved, and the quality of SiC molded body was improved.
Patent Information
- Application Number
- CN202511287279.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-10
- Publication Date
- 2025-12-12
AI Technical Summary
The SiC layer is prone to cracking during the cooling process, which affects the yield of SiC molded products.
A stress-absorbing layer with a porous structure is applied to the substrate to absorb and release the stress generated by the deposited material layer during cooling, thereby reducing the risk of cracking.
By designing a porous absorption layer, the risk of cracking in SiC molded bodies during the cooling process is effectively reduced, thus improving the quality of the molded bodies.
Smart Images
Figure CN121109998A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of semiconductor manufacturing technology, and in particular to a substrate, a deposited material molded body, and a method for preparing the deposited material molded body. Background Technology
[0002] Silicon carbide (SiC) is widely used in various industrial applications due to its excellent properties such as high thermal conductivity, high chemical stability, high mechanical strength, and high wear resistance.
[0003] Chemical vapor deposition (CVD) is a method used to prepare SiC shaped bodies. In this process, a graphite substrate is typically used as the carrier for depositing the SiC layer. After the SiC layer deposition is complete, the temperature in the CVD equipment is gradually lowered so that the graphite substrate and the SiC layer formed thereon can cool down. The SiC shaped body is then obtained by removing the graphite substrate.
[0004] However, the SiC layer is prone to cracking during the cooling process, which affects the yield of the obtained SiC molded body. Summary of the Invention
[0005] This section provides a general overview of this disclosure, rather than a full disclosure of the entire scope or all features of this disclosure.
[0006] According to one aspect of this disclosure, a substrate for preparing a deposited material molded body is provided. The substrate includes a matrix portion and a stress-absorbing layer. The stress-absorbing layer is disposed on the matrix portion to grow a deposited material for forming the deposited material molded body on the outer surface of the stress-absorbing layer, and the stress-absorbing layer has a porous structure.
[0007] According to another aspect of this disclosure, a deposited material molded body is also provided. This deposited material molded body is obtained by growing a deposited material on a substrate. The substrate includes a matrix portion and a stress-absorbing layer. The stress-absorbing layer is disposed on the matrix portion to grow a deposited material for forming the deposited material molded body on the outer surface of the stress-absorbing layer, and the stress-absorbing layer has a porous structure.
[0008] According to another aspect of this disclosure, a method for preparing a deposited material molded body is also provided. This method uses a substrate. The substrate includes a base portion and a stress-absorbing layer. The stress-absorbing layer is disposed on the base portion to grow a deposited material for forming the deposited material molded body on the outer surface of the stress-absorbing layer, and the stress-absorbing layer has a porous structure. The method for preparing the deposited material molded body includes: growing a deposited material layer on the substrate; and removing the substrate to obtain the deposited material molded body.
[0009] According to the above technical solution, by constructing the substrate as including a matrix portion and a stress-absorbing layer disposed on the matrix portion, and growing a deposited material on the stress-absorbing layer, the porous structure of the stress-absorbing layer can absorb and release the stress generated by the deposited material layer through deformation and cracking of the pore walls during the cooling stage after the deposition process. This reduces the risk of cracking in the deposited material layer and improves the quality of the obtained deposited material molded body. Attached Figure Description
[0010] The features and advantages of embodiments of the present disclosure will become more readily understood from the following description with reference to the accompanying drawings. The drawings are not drawn to scale and some features may be enlarged or reduced to show detail of specific parts. In the drawings: Figure 1 This is a schematic diagram of a substrate according to a first embodiment of the present disclosure.
[0011] Figure 2 for Figure 1 The diagram shows a substrate on which no deposited material has grown.
[0012] Figure 3 for Figure 1 The diagram shows a substrate on which a deposited material is grown.
[0013] Figure 4 for Figure 1 The diagram shows a substrate after a layer of deposited material has been formed and cooled.
[0014] Figure 5 A schematic diagram of a substrate according to a second embodiment of the present disclosure, on which a layer of deposited material is formed.
[0015] Figure 6 This is a schematic diagram of a substrate according to a third embodiment of the present disclosure.
[0016] Figure 7 for Figure 6 The diagram shows a substrate after a layer of deposited material has been formed and cooled.
[0017] Figure 8 This is a schematic diagram of a substrate according to the fourth embodiment of the present disclosure.
[0018] Figure 9 This is a schematic diagram of a substrate according to the fifth embodiment of the present disclosure.
[0019] Figure 10 This is a schematic diagram of a substrate according to the sixth embodiment of the present disclosure.
[0020] Figure 11 This is a schematic diagram of the substrate according to the seventh embodiment of the present disclosure.
[0021] Figure 12 This is a flowchart of a method for preparing a deposited material molded body according to an embodiment of the present disclosure.
[0022] In the accompanying drawings, the same or corresponding technical features, parts or components are represented by the same or corresponding reference numerals. Detailed Implementation
[0023] The present disclosure will now be described in detail with reference to the accompanying drawings and exemplary embodiments. It should be noted that the following detailed description of the present disclosure is for illustrative purposes only and is not intended to limit the scope of the disclosure.
[0024] It should be noted that, for clarity, not all features of a particular embodiment are described or shown in the specification and drawings. Furthermore, to avoid unnecessary details obscuring the technical solutions of interest in this disclosure, only the device structures and parts closely related to the technical solutions of this disclosure are described and shown in the specification and drawings, while other details that are not closely related to the technical content of this disclosure and are known to those skilled in the art are omitted.
[0025] During the CVD deposition of SiC, the temperature of the graphite substrate is typically above 1000℃. After deposition, the graphite substrate with the SiC layer must be cooled to room temperature. During this cooling process, the internal stress of the SiC layer increases; moreover, due to the significant difference in the coefficients of thermal expansion between SiC and graphite, large stresses are also generated at the interface between the SiC layer and the graphite substrate. When these stresses are too high, they can cause the SiC layer to crack, affecting the yield of the prepared SiC molded body.
[0026] In this regard, according to embodiments of the present disclosure, a substrate 100 for use in the preparation of a deposited material molded body is provided.
[0027] For example, the substrate 100 may be a graphite substrate; however, the substrate 100 may also be a substrate of other materials made of monocrystalline silicon, polycrystalline silicon, etc. In addition, for example, the deposition material may be SiC; however, the deposition material may also be other types of deposition materials such as boron carbide (B4C), tantalum carbide (TaC), etc.
[0028] Additionally, the deposited material is attached and deposited on the surface of the substrate 100 through a specific process to form a deposited material layer. Exemplarily, the specific process can be a CVD process; however, the specific process can also be other types of processes such as physical vapor deposition (PVD), atomic layer deposition (ALD), etc.
[0029] Below, refer to Figures 1 to 11The substrate 100 will be described in detail.
[0030] First, refer to Figure 1 The substrate 100 includes a base portion 120 and a stress-absorbing layer 140.
[0031] A stress-absorbing layer 140 is disposed on the substrate portion 120 to grow a deposition material for forming a deposited material mold on the outer surface 142 of the stress-absorbing layer 140, and the stress-absorbing layer 140 has a porous structure.
[0032] The porous structure is formed in the stress-absorbing layer 140 by creating pores 144. These pores 144 are actively introduced engineered pores, not inherent pores of the material. For example, in the case of a graphite substrate, the pores 144 of the porous structure are not inherent pores of the graphite material; the inherent pores of the graphite material are passively generated due to factors such as sintering shrinkage and grain boundary defects.
[0033] Below, in conjunction with reference Figures 2 to 4 Continuing with the explanation of substrate 100.
[0034] Figures 2 to 4 The states of the substrate 100 before, during and after the deposition of the material are shown in sequence.
[0035] like Figure 2 As shown, by providing a stress-absorbing layer 140 on the substrate portion 120, the outer surface 142 of the stress-absorbing layer 140 serves as the outer surface 102 of the substrate 100 for growing deposited materials (see...). Figure 1 The substrate portion 120 supports the stress-absorbing layer 140 and the deposited material grown on the outer surface 142 of the stress-absorbing layer 140. Moreover, the substrate portion 120 conducts and distributes heat during the deposition process so that the deposited material is deposited on the outer surface 102 at the desired temperature.
[0036] In the CVD process, such as Figure 3 As shown, the deposited material adheres to and accumulates on the outer surface 142 of the stress-absorbing layer 140 to gradually form the deposited material layer 200.
[0037] After deposition is complete, the reaction chamber of the CVD equipment begins to cool down to cool the substrate 100 and the deposited material layer 200 formed thereon. Figure 4 As shown, since the stress-absorbing layer 140 is in contact with the deposited material layer 200, when the deposited material layer 200 shrinks and generates stress during the cooling process, the porous structure of the stress-absorbing layer 140 can withstand the deformation or cracking of the pore walls 146. Figure 4 The crack (illustrated in 148) absorbs stress, thereby releasing the stress generated by the deposited material layer 200.
[0038] This reduces the risk of cracking of the deposited material layer 200 during cooling and improves the yield of the deposited material molded body obtained by removing the substrate 100.
[0039] It is understandable that the pore walls 146 of the porous structure will not necessarily fracture during cooling. Fracture is one way in which the porous structure absorbs the stress generated during the cooling process of the deposited material layer 200. It is conceivable that the pore walls 146 will only fracture when the stress exceeds a predetermined value, in order to prevent the deposited material layer 200 from cracking under that stress.
[0040] Furthermore, it is understood that the substrate portion 120 and the stress-absorbing layer 140 may be made of the same or different materials. However, if the substrate 100 is described as being made of a single material, then both the substrate portion 120 and the stress-absorbing layer 140 are also made of that material. For example, if the substrate 100 is defined as a graphite substrate, then both the substrate portion 120 and the stress-absorbing layer 140 are also made of graphite.
[0041] It is conceivable that, with reference to Figure 5 The stress-absorbing layer 140 can encapsulate the substrate portion 120.
[0042] In other words, the outer surface 102 of the substrate 100 is the outer surface 142 of the stress absorption layer 140, and the entire deposited material layer 200 is located on the outer surface 142 of the stress absorption layer 140.
[0043] In this way, each region of the deposited material layer 200 is in direct contact with the stress-absorbing layer 140, allowing the porous structure of the stress-absorbing layer 140 to absorb and release the stress generated in each region of the deposited material layer 200. This more effectively reduces the risk of cracking in the deposited material layer 200 during cooling.
[0044] It is conceivable that the porosity of the matrix portion 120 may be less than or equal to 30%. For example, the porosity of the matrix portion 120 may be approximately 15%.
[0045] In this way, the substrate portion 120 has higher overall strength and rigidity, enabling it to withstand greater structural loads and better support the stress-absorbing layer 140 and the deposited material layer 200, thereby improving the stability of the deposited material growth process. Simultaneously, the lower porosity allows the substrate portion 120 to have better thermal conductivity, facilitating efficient and uniform heat transfer during deposition, promoting uniform growth of the deposited material, and improving the quality of the prepared deposited material body.
[0046] It is conceivable that, for example Figure 5As shown, the pore walls 146 of the porous structure that separate the pores 144 can extend from the outer surface 142 of the stress-absorbing layer 140 to the substrate portion 120.
[0047] Regarding the stress generated during the cooling process of the deposited material layer 200, the in-plane tensile stress causes the deposited material layer 200 to shrink in a plane parallel to the outer surface 102 of the substrate 100, which is an important factor leading to cracking of the deposited material layer 200.
[0048] By extending the hole walls 146 from the outer surface 142 of the stress-absorbing layer 140 to the substrate portion 120, the hole walls 146 can be inclined at an angle relative to the outer surface 102 of the substrate 100, for example, perpendicular to the outer surface 102. In this way, in-plane tensile stress can act on the separated hole walls 146 in a plane parallel to the outer surface 102 of the substrate 100, rather than on a continuous structure. This allows the hole walls 146 to absorb and release in-plane tensile stress by cracking when the in-plane tensile stress is too large, thereby more effectively reducing the risk of cracking in the deposited material layer 200.
[0049] It is conceivable that, for example Figure 5 As shown, the minimum thickness of the hole wall 146 can be less than or equal to 2 mm.
[0050] The minimum thickness of the pore wall 146 refers to the thickness of the narrowest solid portion between adjacent pores 144. If the minimum thickness of the pore wall 146 is too large, for example, greater than 2 mm, the pore wall 146 will not crack even when the stress generated by the deposited material layer 200 is already large, thus the stress cannot be released, increasing the risk of cracking of the deposited material layer 200.
[0051] By making the minimum thickness of the hole wall 146 less than or equal to 2 mm, the hole wall 146 can crack before the deposited material layer 200 when the stress generated by the deposited material layer 200 is large. Therefore, the stress absorption layer 140 can absorb and release stress, thereby reducing the risk of cracking of the deposited material layer 200.
[0052] It is conceivable that the proportion of hole walls 146 with a minimum thickness of 2 mm or less in all hole walls 146 of the stress-absorbing layer 140 can be greater than 80%.
[0053] This further enhances the stress-absorbing layer 140's ability to absorb and release stress, thereby further reducing the risk of cracking in the deposited material layer 200.
[0054] It is conceivable that, for example Figure 5 As shown, the hole wall 146 can gradually taper along the direction away from the outer surface 142 of the stress-absorbing layer 140.
[0055] In this way, when the hole wall 146 is subjected to stress during cooling, a higher stress concentration will occur in the portion of the hole wall 146 near the substrate portion 120. Consequently, fracture can preferentially occur in this location. Thus, on the one hand, uncontrollable fracture can be avoided, improving the support stability of the substrate 100; on the other hand, the outer surface 142 of the stress-absorbing layer 140 can be protected from stress, thereby avoiding adverse effects on the deposited material layer 200.
[0056] For example, the shape of the hole wall 146 in a cross section perpendicular to the outer surface 102 can be Figure 5 The inverted trapezoid or inverted cone shown can be replaced by any other suitable shape, which is not limited here.
[0057] It is conceivable that, for example Figure 5 As shown, the pores 144 of the porous structure may include first pores 1442, which are embedded in the stress-absorbing layer 140.
[0058] The first pore 1442 being embedded in the stress-absorbing layer 140 means that the boundary of the first pore 1442 is located within the stress-absorbing layer 140.
[0059] In this way, the outer surface 142 of the stress-absorbing layer 140 has no opening of the first pore 1442, thus maintaining its integrity. This avoids the possibility of openings on the outer surface 142 affecting the growth of the deposited material.
[0060] Another possibility is to refer to Figure 6 The porous structure pores 144 may include second pores 1444, which open onto the outer surface 142 of the stress-absorbing layer 140.
[0061] In this way, the outer surface 142 of the stress-absorbing layer 140 is no longer intact, but has openings. In this case, when the deposited material layer 200 formed on the outer surface 142 is cooled, as... Figure 7 As shown, the outer surface 142 is more susceptible to fracture due to the stress generated by the deposited material layer 200. Therefore, the risk of cracking in the deposited material layer 200 can be reduced more effectively.
[0062] It is understood that the pores 144 of the porous structure may include both the first pore 1442 and the second pore 1444.
[0063] It is conceivable that, with reference to Figure 8 The substrate 100 may be circular, and the pores 144 of the porous structure may include a third pore 1446, which extends along the radial direction of the substrate 100.
[0064] The in-plane tensile stress mentioned above includes circumferential stress. By including a third pore 1446 extending radially along the substrate 100 in the pore 144, the porous structure can have multiple spaced pore walls 146 in the circumferential direction. This allows the pore walls 146 to absorb and release stress by cracking when the circumferential stress is too high, thereby effectively reducing the risk of cracking of the deposited material layer 200 in the circumferential direction.
[0065] Understandably, referring to Figure 9 The substrate 100 can be annular. Annular substrates are more susceptible to circumferential stress during cooling. Therefore, a third pore 1446 extending radially along the substrate 100 can also be provided.
[0066] It is conceivable that, with reference to Figure 10 When the substrate 100 is circular, the pores 144 of the porous structure may include a fourth pore 1448, which extends along the circumferential direction of the substrate 100.
[0067] The in-plane tensile stress mentioned above also includes radial stress. By including a fourth pore 1448 extending along the circumferential direction of the substrate 100 in the pore 144, the porous structure can have multiple spaced pore walls 146 in the radial direction. This allows the pore walls 146 to absorb and release stress by cracking when the radial stress is too high, thereby effectively reducing the risk of cracking of the deposited material layer 200 in the radial direction.
[0068] It is understandable that setting the fourth pore 1448 is also applicable to the case where the substrate 100 is annular, and will not be elaborated here.
[0069] It is also understood that the pores 144 of the porous structure may include both the third pore 1446 and the fourth pore 1448.
[0070] It is conceivable that, in the case where pore 144 includes at least one of the third pore 1446 and the fourth pore 1448, the proportion of the at least one in pore 144 can be greater than or equal to 60%.
[0071] When the substrate 100 is circular or annular, the in-plane tensile stress in the deposited material layer 200 mainly includes radial stress and circumferential stress. By making this proportion greater than or equal to 60%, radial stress and circumferential stress can be effectively absorbed and released. Thus, in-plane tensile stress can be effectively absorbed and released, thereby effectively reducing the risk of cracking of the deposited material layer 200.
[0072] It is conceivable that, for example Figure 10As shown, when the substrate 100 is circular (or can be conceived as annular), the porous structure may include a plurality of pores 144, which are arranged in the form of a plurality of concentric rings about the center O of the substrate 100, wherein the plurality of concentric rings are distributed along the radial direction of the substrate 100.
[0073] In this way, the porous structure is divided into multiple uniformly arranged pore walls 146 in the radial direction, which significantly reduces the support force in the radial direction. Therefore, when the radial stress, which is the main stress component, is too large, these stresses can be absorbed and released more effectively through cracking of the pore walls 146, thereby more effectively reducing the risk of cracking of the deposited material layer 200 in the radial direction.
[0074] It is conceivable that, for example Figure 11 As shown, each pair of adjacent concentric rings in a plurality of concentric rings can be connected to each other.
[0075] In this way, the supporting force of the annular hole wall 146 in the circumferential direction can also be reduced, so that the circumferential stress can be effectively absorbed and released by cracking of the hole wall 146, thereby effectively reducing the risk of cracking of the deposited material layer 200 in the circumferential direction.
[0076] It is conceivable that the base 100 can be integrally molded.
[0077] One-piece molding refers to manufacturing the substrate 100 into a single, seamless, integral component through a one-step molding process. No connecting, assembling, or splicing steps are used in the entire manufacturing process, and the final substrate 100 has no physical connection interfaces inside.
[0078] In this way, the thermal conductivity of the substrate 100 can be improved, promoting the uniform growth of the deposited material. In addition, it can also ensure that the cracking of the porous structure occurs at the intended location, avoiding interference from the physical connection interface, thereby improving the support stability of the substrate 100.
[0079] According to another aspect of this disclosure, a deposited material molded body is also provided. This deposited material molded body is obtained by growing a deposited material on a substrate 100.
[0080] According to another aspect of this disclosure, referring to Figure 12 Furthermore, a method for preparing a shaped deposited material is also provided.
[0081] The preparation method includes: S100: A layer of deposited material is grown on a substrate; and S200: Remove the substrate to obtain a shaped body of the deposited material.
[0082] In this disclosure, the terms "first," "second," etc., are used for descriptive purposes only and should not be considered restrictive. Furthermore, although this disclosure has been described with reference to exemplary embodiments, it should be understood that this disclosure is not limited to the specific embodiments described and shown herein. Various changes can be made to the exemplary embodiments by those skilled in the art without departing from the scope defined by the claims of this disclosure.
[0083] The features mentioned and / or shown in the foregoing description of exemplary embodiments of this disclosure may be combined in the same or similar manner with one or more other embodiments, combined with features in other embodiments, or substituted for corresponding features in other embodiments. Such combinations or substitutions should also be considered as including within the scope of protection of this disclosure.
Claims
1. A substrate for preparing deposited material shaped articles, characterized in that, The substrate includes: The base portion; and A stress-absorbing layer is disposed on the substrate portion to grow a deposition material for forming the deposited material molded body on the outer surface of the stress-absorbing layer, the stress-absorbing layer having a porous structure.
2. The substrate according to claim 1, characterized in that, The stress-absorbing layer encapsulates the substrate portion.
3. The substrate according to claim 1 or 2, characterized in that, The porosity of the matrix portion is less than or equal to 30%.
4. The substrate according to claim 1 or 2, characterized in that, The pore walls of the porous structure, which separate the pores, extend from the outer surface to the substrate portion.
5. The substrate according to claim 4, characterized in that, The minimum thickness of the hole wall is less than or equal to 2 mm.
6. The substrate according to claim 4, characterized in that, The hole wall gradually tapers away from the outer surface.
7. The substrate according to claim 1 or 2, characterized in that, The porous structure includes at least one of a first pore and a second pore, wherein the first pore is embedded in the stress-absorbing layer and the second pore opens onto the outer surface.
8. The substrate according to claim 1 or 2, characterized in that, The substrate is circular or annular, and the pores of the porous structure include at least one of a third pore and a fourth pore, wherein the third pore extends in the radial direction of the substrate and the fourth pore extends in the circumferential direction of the substrate.
9. The substrate according to claim 8, characterized in that, The proportion of at least one in the pores is greater than or equal to 60%.
10. The substrate according to claim 1 or 2, characterized in that, The substrate is circular or annular, and the porous structure includes multiple pores. The multiple pores are arranged in the form of multiple concentric rings about the center of the substrate, wherein the multiple concentric rings are distributed along the radial direction of the substrate.
11. The substrate according to claim 10, characterized in that, Each pair of adjacent concentric rings in the plurality of concentric rings is connected to each other.
12. The substrate according to claim 1 or 2, characterized in that, The substrate is a graphite substrate.
13. The substrate according to claim 1 or 2, characterized in that, The substrate is integrally molded.
14. A shaped article of deposited material, characterized in that, The deposited material body is obtained by growing a deposited material on a substrate according to any one of claims 1 to 13.
15. A method for preparing a shaped deposited material, characterized in that, The preparation method is performed using the substrate according to any one of claims 1 to 13, and the preparation method includes: A material layer is grown on the substrate; and Remove the substrate to obtain the deposited material shaped body.