Low-loss high-efficiency photon phase shifter

Abstract

The invention relates to a low-loss high-efficiency photon phase shifter. The disclosed photonic device includes a first cladding layer, a first electrical contact including a first lead coupled to a first dielectric portion, a second electrical contact including a second lead coupled to a second dielectric portion, a waveguide structure including a planar layer including a first material, and a second cladding layer. The flat plate layer may be coupled to a first dielectric portion of the first electrical contact and a second dielectric portion of the second electrical contact. The dielectric constant of the first dielectric portion and the second dielectric portion may be greater than the dielectric constant of the first material.

Description

[0001] This application is a divisional application of the invention patent application filed on January 27, 2021, with application number 202180015613.0 and invention title "Low-loss High-efficiency Photonic Phase Shifter".

[0002] Priority requirements

[0003] This application claims priority to U.S. Provisional Patent Application No. 62 / 967,166, filed January 29, 2020, entitled “Low Loss High Efficiency Photonic Phase Shifter,” which is incorporated herein by reference in its entirety, as if it were set forth in whole and in its entirety. Technical Field

[0004] The embodiments described herein generally relate to electro-optical devices such as phase shifters and switches. Background Technology

[0005] Electro-optic (EO) modulators and switches have been used in the field of optics. Some EO modulators utilize free carrier electric refraction, free carrier electric absorption, or the DC Kerr effect to modify optical properties during operation, for example, changing the phase of light propagating through the EO modulator or switch. As an example, optical phase modulators can be used in integrated optical systems, waveguide structures, and integrated optoelectronic devices.

[0006] Despite progress in the field of EO modulators and switches, there is a need in the art for improved methods and systems related to EO modulators and switches. Summary of the Invention

[0007] Some embodiments described herein relate to photonic devices such as electro-optic switches and phase shifters. The device may include a first cladding layer, a first electrical contact including a first lead coupled to a first dielectric portion, a second electrical contact including a second lead coupled to a second dielectric portion, a waveguide structure including a planar layer comprising a first material, and a second cladding layer. The planar layer may be coupled to the first dielectric portion of the first electrical contact and the second dielectric portion of the second electrical contact.

[0008] The dielectric constants of the first dielectric portion and the second dielectric portion may be greater than the dielectric constant of the first material in the direction separating the first dielectric portion and the second dielectric portion. At a first temperature greater than 1 mK, less than 77 K, less than 150 K, and / or within another temperature range, the dielectric constants of the first dielectric portion and the second dielectric portion may be greater than the dielectric constant of the first material. In some embodiments, the first material is a transparent material with a refractive index greater than that of the first cladding layer and the second cladding layer. In some embodiments, the ratio between the dielectric constants of the first dielectric portion and the second dielectric portion and the dielectric constant of the first material is 2 or greater.

[0009] The waveguide structure may include a first ridge portion comprising a first material and coupled to a planar layer, wherein the first ridge portion is disposed between a first electrical contact and a second electrical contact. The ridge portion may be disposed on a first side of the planar layer and may extend into a first cladding layer, and the first dielectric portion and the second dielectric portion may be coupled to the planar layer on the first side of the planar layer adjacent to the ridge portion of the waveguide structure.

[0010] In other embodiments, the ridge portion is deployed on a first side of the planar layer and extends into a first overlay layer, wherein the first dielectric portion and the second dielectric portion are coupled to the planar layer on a second side of the planar layer opposite to the first side. In some embodiments, the first electrical contact and the second electrical contact are deployed on the second side of the planar layer.

[0011] In some embodiments, a first electrical contact is coupled to a first dielectric portion by passing through the planar layer from a second side of the planar layer to a first side of the planar layer, and a second electrical contact is coupled to a second dielectric portion by passing through the planar layer from a second side of the planar layer to a first side of the planar layer.

[0012] In some embodiments, the first dielectric portion and the second dielectric portion are composed of one of strontium titanate (STO), barium strontium titanate (BST), hafnium oxide, zirconium oxide, titanium oxide, graphene oxide, tantalum oxide, lead zirconate titanate (PZT), lanthanum lead zirconate titanate (PLZT), or barium strontium niobate (SBN).

[0013] In some embodiments, the first material is one of barium titanate (BTO), barium strontium titanate (BST), lithium niobate, lead zirconate titanate (PZT), lanthanum lead zirconate titanate (PLZT), alumina, aluminum nitride, or barium strontium niobate (SBN).

[0014] The present invention is intended to provide a brief overview of some of the subjects described in this document. Therefore, it should be understood that the above features are merely examples and should not be construed as narrowing the scope or spirit of the subjects described herein in any way. Other features, aspects, and advantages of the subjects described herein will become clear from the following detailed description, accompanying drawings, and claims. Attached Figure Description

[0015] To better understand the various embodiments described, reference should be made to the following detailed description in conjunction with the accompanying drawings, in which similar reference numerals refer to corresponding parts throughout the drawings.

[0016] Figure 1 This is a simplified schematic diagram illustrating an optical switch according to some embodiments;

[0017] Figure 2 This is a simplified schematic diagram illustrating a cross-section of a waveguide structure comprising a high-κ electrode positioned opposite the waveguide ridge, according to some embodiments.

[0018] Figure 3 This is a simplified schematic diagram illustrating a cross-section of a waveguide structure comprising a high-κ electrode with penetrating leads and positioned opposite the waveguide ridge, according to some embodiments.

[0019] Figure 4 This is a simplified schematic diagram illustrating a cross-section of a waveguide structure comprising a high-κ electrode placed on the same side as the waveguide ridge, according to some embodiments.

[0020] Figure 5 This is a simplified schematic diagram illustrating a cross-section of a waveguide structure comprising a high-κ electrode and exhibiting a sandwich structure according to some embodiments;

[0021] Figure 6 This is a simplified schematic diagram illustrating a cross-section of a vertical waveguide structure comprising a high-κ material according to some embodiments;

[0022] Figure 7 This is a simplified schematic diagram illustrating a cross-section of a waveguide structure having a dielectric portion aligned with the waveguide structure, according to some embodiments.

[0023] Figure 8 This is a simplified schematic diagram illustrating a cross-section of a waveguide structure having a dielectric portion exhibiting a ridge-like profile, according to some embodiments.

[0024] Figure 9 This is a simplified schematic diagram showing a top view of a waveguide structure according to some embodiments;

[0025] Figure 10 These are examples of user-interface interaction with hybrid quantum computing devices according to some embodiments; and

[0026] Figure 11 This is a simplified schematic diagram illustrating a cross-section of a waveguide structure showing the direction of the induced electric field according to some embodiments.

[0027] While the features described herein may be susceptible to various modifications and alternatives, specific embodiments thereof are illustrated by way of example in the accompanying drawings and are described in detail herein. However, it should be understood that the drawings and their detailed description are not intended to limit one to the specific forms disclosed, but rather are intended to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the subject matter as defined in the appended claims. Detailed Implementation

[0028] Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings. Numerous specific details are set forth in the following detailed description to provide a thorough understanding of the various described embodiments. However, it will be apparent to those skilled in the art that the various described embodiments can be practiced without these specific details. In other instances, well-known methods, processes, components, circuits, and networks have not been described in detail to avoid unnecessarily obscuring aspects of the embodiments.

[0029] For purposes of explanation, the foregoing description has been given with reference to specific embodiments. However, the illustrative discussion above is not intended to be exhaustive or to limit the scope of the claims to the precise forms disclosed. In view of the foregoing teachings, many modifications and variations are possible. The embodiments were chosen to best explain the basic principles of the claims and their practical application, thereby enabling others skilled in the art to best utilize the embodiments with various modifications suitable for the particular intended use.

[0030] Embodiments of the present invention relate to optical systems. More specifically, embodiments of the invention use high-dielectric-constant materials (i.e., high-κ materials) in optical modulators and switches to reduce power consumption during operation. It should be noted that, as used herein, "high-dielectric-constant material" is intended to indicate a material having high dielectric permittivity compared to other materials within the operating components of an optical modulator or switch, particularly compared to materials used to construct waveguides. By way of example only, embodiments of the invention are provided in the context of integrated optical systems including active optical devices, but the invention is not limited to this example and has broad applicability to a wide variety of optical and optoelectronic systems.

[0031] According to some embodiments, the active photonic devices described herein utilize electro-optic effects, such as refractive index changes induced by free carriers in a semiconductor, the Pockels effect, and / or the DC Kerr effect, to modulate and / or switch optical signals. Therefore, embodiments of the invention are applicable to modulators in which transmitted light is modulated to ON or OFF, or to modulate light through a partial change in the percentage of transmission, and optical switches in which transmitted light is output at a first output (e.g., a waveguide) or a second output (e.g., a waveguide), or optical switches having more than two outputs and more than one input. Therefore, embodiments of the invention are applicable to a variety of designs, including M (input) x N (output) systems utilizing the methods, devices, and techniques discussed herein.

[0032] Figure 1 This is a simplified schematic diagram illustrating an optical switch according to an embodiment of the present invention. (See reference) Figure 1 Switch 100 includes two input terminals: input terminal 1 and input terminal 2, and two output terminals: output terminal 1 and output terminal 2. As an example, the input and output terminals of switch 100 can be implemented as optical waveguides operable to support single-mode or multimode beams. As an example, switch 100 can be implemented as a Mach-Zehnder interferometer integrated with a set of 50 / 50 beam splitters 105 and 107, respectively. Figure 1 As shown, input terminals 1 and 2 are optically coupled to a first 50 / 50 beamsplitter 105 (also called a directional coupler), which receives light from either input terminal 1 or input terminal 2 and, through evanescent coupling within the 50 / 50 beamsplitter, guides 50% of the input light from input terminal 1 into waveguide 110 and 50% into waveguide 112. Simultaneously, the first 50 / 50 beamsplitter 105 guides 50% of the input light from input terminal 2 into waveguide 110 and 50% into waveguide 112. Considering only the input light from input terminal 1, this input light is uniformly split between waveguides 110 and 112.

[0033] The Mach-Zehnder interferometer 120 includes a phase adjustment section 122. A voltage V0 can be applied to the waveguides in the phase adjustment section 122, allowing it to have a controllably varying refractive index. Because the light in waveguides 110 and 112 still has a well-defined phase relationship after propagating through the first 50 / 50 beam splitter 105 (e.g., they can be in phase, 180° out of phase, etc.), phase adjustment in the phase adjustment section 122 can introduce a predetermined phase difference between the light propagating in waveguides 130 and 132. As those skilled in the art will understand, the phase relationship between the light propagating in waveguides 130 and 132 can cause the output light to appear at output 1 (e.g., in phase) or output 2 (e.g., out of phase), thus providing a switching function, as the light is guided to output 1 or output 2 according to the voltage V0 applied to the phase adjustment section 122. Although in Figure 1 The illustration shows a single active arm, but it should be recognized that both arms of a Mach-Zehnder interferometer can include phase adjustment sections.

[0034] like Figure 1 As shown, compared to all-optical switching technology, electro-optical switching technology utilizes an electrical bias applied to the active region of the switch (e.g., Figure 1 The voltage bias (V0) is used to generate optical changes. The electric field and / or current generated by applying this voltage bias cause one or more optical properties (such as refractive index or absorbance) of the active region to change.

[0035] Although Figure 1 The embodiments of the Mach-Zehnder interferometer are illustrated, but the embodiments of the present invention are not limited to this specific switching architecture, and other phase adjustment devices are included within the scope of the present invention, including ring resonator designs, Mach-Zehnder modulators, generalized Mach-Zehnder modulators, etc. Many variations, modifications, and alternatives will be recognized by those skilled in the art.

[0036] In some embodiments, the optical phase shifter device described herein can be used within a quantum computing system, such as... Figure 10 The hybrid quantum computing system shown is illustrated. Alternatively, these optical phase shifter devices can be used in other types of optical systems. For example, other computing, communication, and / or technology systems can utilize photonic phase shifters to guide optical signals (e.g., single-photon or continuous-wave (CW) optical signals) within a system or network, and in various embodiments, the phase shifter architecture described herein can be used within these systems.

[0037] Figures 2-8 –Cross-section of a photon phase shifter

[0038] Figures 2-8These are simplified cross-sectional views illustrating various architectures for photonic phase shifters according to various embodiments. Note that... Figures 2-8 The system architecture shown is a schematic diagram and may not be drawn to scale. Although Figures 2-8 The system architectures shown differ in several important design features, but they also share some common characteristics. For example, as described in more detail below, Figures 2-8 Each of the above illustrates two electrical contacts, and each contact includes leads (230, 330, 430, 530, 640, 740, and 830, and 232, 332, 432, 532, 642, 742, and 832) connected to dielectric electrodes (240, 340, 440, 540, 640, 740, and 840, and 242, 342, 442, 542, 642, 732, and 832). In some embodiments, the leads may be made of metal, or alternatively of a semiconductor material.

[0039] The dielectric electrodes are configured to extend close to the location of the optical mode in the waveguide, and the photonic phase shifter is configured such that a controllable voltage difference can be introduced across the two dielectric electrodes to alter the accumulated phase of the photonic mode propagating through the waveguide. For example, the dielectric electrodes can be coupled via leads to a voltage source to which the controllable voltage difference is applied.

[0040] Importantly, the dielectric electrode can be constructed from a high-κ material with a large dielectric constant, resulting in a dielectric constant greater than that of the waveguide and / or slab layer materials. As used herein, κ represents the dielectric constant, which is the real component of the relative permittivity, κ = Re(ε r ) = Re(ε / ε0), where ε r It is the complex-valued relative permittivity, ε is the absolute permittivity of the material, and ε0 is the permittivity free space. It should be noted that, for clarity, ε... r The imaginary component of κ is related to the electrical conductivity of the material, while the real component κ is related to the dielectric susceptibility of the material.

[0041] The dielectric constant of a material may have a different value in the presence of a direct current (DC) voltage compared to an AC voltage, and the dielectric constant of a material under an AC voltage may be a function of frequency κ(ω). Therefore, in some embodiments, the dielectric constant of the material at the operating frequency of the photonic phase shifter can be considered when selecting materials for dielectric electrodes, planar layers, and / or ridge waveguides.

[0042] The dielectric electrodes may be along the direction separating the first dielectric portion and the second dielectric portion (e.g., Figures 2-5 and Figures 7-8 The x-direction, or Figure 6The y-direction in the medium is composed of a material having a higher dielectric constant than the first material of the planar layer. For example, in anisotropic media, the dielectric tensor ε can be expressed by a matrix that makes the electric field E related to the electric displacement D.

[0043]

[0044] Where the component ε xx , ε xy , etc., represent the various components of the dielectric tensor. In some embodiments, the materials of the first and second dielectric electrodes may be selected such that the diagonal component of the dielectric tensor along the direction separating the dielectric electrodes is greater than the corresponding diagonal component of the dielectric tensor of the material of the planar layer and / or waveguide structure.

[0045]

[0046] Table 1 - χ² values ​​for various materials (3) Refractive index and dielectric constant

[0047] Table 1 illustrates the χ² values ​​for various materials. (3) Refractive index and dielectric constant values. As shown in Table 1, in some embodiments, STO has an extremely high dielectric constant for temperatures below 10K, making STO an ideal material for dielectric electrodes, while BTO can be used for the planar layers and / or ridges of waveguides.

[0048] As shown in the figure Figures 2-8 Each of the architectures shown illustrates a photonic device comprising a first cladding layer and a second cladding layer. For example, regions labeled 210, 310, 410, 510, 610, 710, and 810 represent the first cladding layer on one side of the waveguide, while regions labeled 212, 312, 412, 512, 612, 712, and 812 represent the second cladding layer on the other side of the waveguide. Note that the terms "first" and "second" are used only to distinguish between the two cladding layers; for example, the term "first cladding layer" can refer to the cladding layer on either side of the waveguide. In some embodiments, the refractive indices of the first and second cladding layers may be lower than the refractive index of the waveguide structure.

[0049] Figures 2-8The diagram further illustrates a first electrical contact and a second electrical contact. The first electrical contact includes a first lead (230, 330, 430, 530, 630, 730, and 830) coupled to a first dielectric portion (240, 340, 440, 540, 640, 740, and 840), and the second electrical contact includes a second lead (232, 332, 432, 532, 632, 732, and 842) coupled to a second dielectric portion (242, 342, 442, 542, 642, 742, and 842). The first and second leads may be made of a conductive material such as a metal, or alternatively, they may be made of a semiconductor material. In various embodiments, the first dielectric portion and the second dielectric portion are composed of one or more of strontium titanate (STO), barium titanate (BTO), barium strontium titanate (BST), hafnium oxide, lithium niobate, zirconium oxide, titanium oxide, graphene oxide, tantalum oxide, lead zirconate titanate (PZT), lanthanum lead zirconate titanate (PLZT), barium strontium niobate (SBN), aluminum oxide, aluminum oxide, or doped variants or solid solutions thereof.

[0050] Figures 2-8 Examples include waveguide structures comprising planar layers (220, 320, 420 and 520, 651, 754 and 851) containing a first material, wherein the planar layer is coupled to a first dielectric portion of a first electrical contact and a second dielectric portion of a second electrical contact. In some embodiments, the waveguide structure further includes ridge portions (251, 351, 451 and 551) made of the first material (or different materials, such as silicon nitride or any other material) and coupled to the planar layer, wherein the ridge portions are disposed between the first and second electrical contacts. In various embodiments, the first material is one of strontium titanate (STO), barium titanate (BTO), barium strontium titanate (BST), hafnium oxide, lithium niobate, zirconium oxide, titanium oxide, graphene oxide, tantalum oxide, lead zirconate titanate (PZT), lanthanum lead zirconate titanate (PLZT), barium strontium niobate (SBN), aluminum oxide, aluminum oxide, or doped variants or solid solutions thereof.

[0051] In some embodiments, the second material constituting the first and second dielectric portions can be selected based on the first material constituting the planar layer and / or waveguide structure. For example, the second material can be selected such that it has a larger dielectric constant than the first material. As an example, if the first material is BTO, then the second material can be selected as STO, which has a larger dielectric constant than BTO at the low temperature (e.g., 4K) where the photonic device is intended to operate. Advantageously, for a given acceptable level of loss from the waveguide to the electrode, the large dielectric constant of the dielectric electrode allows it to be placed closer to the waveguide than a metal electrode. For example, the high conductivity of a metal electrode will result in a greater degree of photon absorption (i.e., loss) from the waveguide than that of a dielectric electrode at the same spacing from the waveguide. Thus, for a given loss tolerance, the dielectric electrode can be placed closer to the waveguide than a metal electrode. The high dielectric constant of the dielectric electrode corresponds to a high polarizability of the dielectric material, which in turn leads to energy-saving control mechanisms to modulate the electric field within the waveguide structure.

[0052] In some embodiments, the materials used for the dielectric electrodes and the waveguide structure can be selected based on their effective dielectric constants. For example, while the dielectric constant of a material (or the dielectric tensor of anisotropic materials) is an inherent material property, the effective dielectric constant of a structure is not only proportional to its dielectric constant but also depends on the shape and size of the structure. In these embodiments, the materials used for the first and second dielectric portions can be selected such that the effective dielectric constants of the first and second dielectric portions are greater than the effective dielectric constant of the waveguide structure.

[0053] In some embodiments, such as Figure 10 Cryogenic devices such as the cryostat 1113 shown can be configured to maintain the first electrical contact, the second electrical contact, and the waveguide structure at a low temperature, for example, at or below 77 Kelvin.

[0054] In some embodiments, the first and second electrical contacts are configured to generate an electric field in the waveguide structure along one or more directions (e.g., along the x-direction), and the waveguide structure is characterized by an electro-optic coefficient (e.g., χ). (2) Pukker coefficient, or χ² (3) The Kerr coefficient has a non-zero value aligned along the direction of the electric field. For example, the lead can be coupled to a voltage source that applies a controllable (e.g., programmable) voltage difference, thereby generating an electric field in the waveguide structure, such as... Figure 10 As shown in the diagram. Additionally or alternatively, the guided mode supported by the waveguide structure may have a polarization direction aligned with the x-direction.

[0055] In some embodiments, the first and second dielectric portions are configured as a second layer deployed coplanar with and adjacent to a first side of the planar layer. For example, the first and second dielectric portions can be grown on the first side of the planar layer (e.g., using epitaxy or another method such as metal-organic chemical vapor deposition, molecular beam epitaxy, physical vapor deposition, sol-gel, etc.) such that the first and second dielectric layers are directly coupled to the planar layer. Alternatively, in some embodiments, an intermediate layer can be deployed between the planar layer and the first and second dielectric layers, such that the planar layer is indirectly coupled to the first and second dielectric layers. In some embodiments, the intermediate layer can be made of an oxide material.

[0056] The first and second dielectric portions may be separated by a gap region (e.g., gap region 243 or 343). In some embodiments, the gap region may have been etched away and may be filled with a covering material. In some embodiments, the first and second dielectric portions may both be grown as a single second layer over a planar layer, and a region may subsequently be etched away to separate the first and second dielectric portions. This etched region may then be filled with a covering material. Alternatively, the etched region may be left empty (i.e., filled with air or a vacuum).

[0057] In some embodiments, the dielectric constants of the first dielectric portion and the second dielectric portion are greater than the dielectric constant of the first material in the direction separating the first dielectric portion and the second dielectric portion. At a first temperature greater than 1 mK, less than 77 K, less than 150 K, and / or in another temperature range, the dielectric constants of the first dielectric portion and the second dielectric portion may be greater than the dielectric constant of the waveguide structure. In some embodiments, the first material is a transparent material having a refractive index greater than that of the first cladding layer and the second cladding layer. In some embodiments, the ratio between the dielectric constants of the first dielectric portion and the second dielectric portion and the dielectric constant of the first material is 2 or greater.

[0058] The following paragraphs describe in Figures 2-8 The various design features differ between the system architectures shown.

[0059] Figure 2 An example is illustrated where the ridge portion (251) of the waveguide structure is deployed at the bottom of the planar layer and extends into the first cladding layer (210). For example... Figure 2 As shown, the combination of the ridge portion and the flat plate layer has a first thickness (262) greater than the second thickness (260) of the individual flat plate layer (220), and the excess of the first thickness relative to the second thickness extends into the overlay layer (210) on the bottom side of the flat plate layer. Figure 2As shown, a first dielectric portion (240) and a second dielectric portion (242) are coupled to the planar layer (220) on the top side of the planar layer opposite to the bottom side. Furthermore, a first electrical contact (230) and a second electrical contact (232) are disposed on the top side of the planar layer (220). It should be noted that the terms "top" and "bottom" are used for clear reference to the perspective view shown in the figure and do not necessarily refer to any particular orientation relative to the entire device.

[0060] Figure 3 An example is illustrated where a ridge portion (351) of the waveguide structure is positioned on the top side of the planar layer and extends into a first cladding layer (312), and a first dielectric portion and a second dielectric portion are coupled to the planar layer on the bottom side opposite the top side. As shown, the combination of the ridge portion and the planar layer has a first thickness (362) greater than the second thickness (360) of the individual planar layer (320), and the excess of the first thickness relative to the second thickness extends into the first cladding layer (312) on the top side of the planar layer (320). Figure 3 As shown, the first dielectric portion (340) and the second dielectric portion (342) are coupled to the plate layer (320) on the bottom side of the plate layer opposite to the top side. Furthermore, the first electrical contact (330) is coupled to the first dielectric portion (340) by passing through the plate layer (320) from the top side to the bottom side of the plate layer, and the second electrical contact (332) is coupled to the second dielectric portion (342) by passing through the plate layer (320) from the top side to the bottom side of the plate layer.

[0061] Figure 4 An example is illustrated where the combination of the ridge portion (451) of the waveguide structure and the planar layer has a first thickness (462) greater than the second thickness (460) of the planar layer (420), and the portion of the first thickness exceeding the second thickness extends into a first cladding layer (412) on the top side of the planar layer. For example... Figure 4 As shown, the first dielectric portion (440) and the second dielectric portion (442) are coupled to a first material (420) on the top side of the planar layer. Furthermore, the first dielectric portion (440) and the second dielectric portion (442) are adjacent to the ridge portion (451) of the waveguide structure.

[0062] Figure 5An example is illustrated of a waveguide structure comprising a first strip waveguide portion (554) and a second strip waveguide portion (556), wherein the first and second strip waveguide portions are respectively composed of a second material and a third material, and wherein a planar layer (520) is disposed between the first and second strip waveguide portions (554) and (556). The first and second strip waveguide portions may be composed of the same or different materials. For example, they may each be composed of silicon nitride (Si3N4), silicon dioxide (SiO2), aluminum oxide (Al2O3), or other similar materials.

[0063] Figure 6 An example is illustrated of a vertical waveguide architecture in which a first dielectric portion (642) is coupled to the plate layer (651) on the top side of the plate layer and a second dielectric portion (640) is coupled to the plate layer (651) on the bottom side of the plate layer opposite to the top side. In other words, the first and second dielectric portions are coupled to the top and bottom sides of the waveguide structure such that the induced electric field within the waveguide structure is oriented along the y-direction.

[0064] Figure 7 An example is illustrated of a waveguide architecture in which each of the first dielectric portion (740) and the second dielectric portion (742) is deployed in a straight line with the waveguide structure (754). In other words, each of the first dielectric portion and the second dielectric portion is deployed with the waveguide structure within a single layer of a single width.

[0065] Figure 8 An example is illustrated of a waveguide architecture in which a first dielectric portion (840) and a second dielectric portion (842) share a ridge profile with a waveguide structure (851), wherein the ridge profile extends into a first cladding layer (812). For example, the first dielectric portion (840) may include a ridge portion (844) having a thickness (862) greater than the thickness (860) of the remainder of the first dielectric portion, and the second dielectric portion (842) may include a ridge portion (846) having a thickness (862) greater than the thickness (860) of the remainder of the second dielectric portion. Furthermore, the ridge portions of the first and second dielectric portions may have the same thickness as the waveguide structure (851).

[0066] Figure 9 -Top view of a photon phase shifter

[0067] Figure 9 This is a top view of a photonic phase shifter architecture according to some embodiments. As shown, the phase shifter may include a first lead (930) and a second lead (932), a first dielectric portion (940) and a second dielectric portion (942), a planar layer (920), and a ridge portion (951) of a waveguide structure.

[0068] Figure 10 Hybrid quantum computing systems

[0069] Figure 10 This is a simplified system diagram illustrating the integration of an electro-optic switch with a cryostat into a hybrid quantum computing system according to some embodiments. For operation at cryogenic temperatures (e.g., liquid helium temperatures), embodiments of the invention integrate the electro-optic switch discussed herein into a system including a cooling system. Therefore, embodiments of the invention provide optical phase shifters that can be used in hybrid computing systems, such as… Figure 8 As shown in the diagram, the hybrid computing system 1101 includes a user interface device 1103 communicatively coupled to a hybrid quantum computing (QC) subsystem 1105. The user interface device 1103 can be any type of user interface device, such as a terminal including a display, keyboard, mouse, touchscreen, etc. Alternatively, the user interface device itself can be a computer such as a personal computer (PC), laptop, tablet computer, etc. In some embodiments, the user interface device 1103 provides an interface for a user to interact with the hybrid QC subsystem 1105. For example, the user interface device 1103 can run software such as a text editor, interactive development environment (IDE), command prompt, graphical user interface, etc., allowing the user to program or otherwise interact with the QC subsystem to run one or more quantum algorithms. In other embodiments, the QC subsystem 1105 may be pre-programmed, and the user interface device 1103 may simply be an interface for the user to initiate quantum computing, monitor processes, and receive results from the hybrid QC subsystem 1105. The hybrid QC subsystem 1105 also includes a classical computing system 1107 coupled to one or more quantum computing chips 1109. In some examples, the classical computing system 1107 and the quantum computing chip 1109 can be coupled to other electronic components 1111, such as pulsed pump lasers, microwave oscillators, power supplies, networking hardware, etc.

[0070] In some embodiments utilizing cryogenic operation, the quantum computing system 1109 may be housed within a cryostat (e.g., cryostat 1113). In some embodiments, the quantum computing chip 1109 may include one or more constituent chips, such as a hybrid electronics chip 1115 and an integrated photonics chip 1117. Signals can be routed on and off the chip in various ways, for example, via optical interconnects 1119 and other electronic interconnects 1121.

[0071] Figure 11 –Induced electric field in a photonic phase shifter

[0072] Figure 11 This is an example based on some embodiments. Figure 2The diagram shows a simplified cross-section of the waveguide structure, with the direction of the induced electric field indicated by arrows. As shown, the small arrows indicate the direction of the induced electric field, which points approximately along the positive x-direction through the dielectric portion of the device. The electric field curves convexly above and below the dielectric portion, as shown. Furthermore, the large arrow (1150) pointing in the positive x-direction illustrates the polarization direction of the optical mode that can travel through the planar layer and the waveguide.

[0073] In some embodiments, the first dielectric portion, the second dielectric portion, and the waveguide structure are deployed within a single layer having a first thickness, and the waveguide structure is deployed between the first dielectric portion and the second dielectric portion. See, for example, [link to relevant documentation]. Figure 7 .

[0074] In some embodiments, the first dielectric portion and the second dielectric portion each include a corresponding ridge structure, the first thickness of which is greater than a second thickness of the planar structure of the first and second dielectric portions. The first thickness is the same as the thickness of the waveguide structure. In these embodiments, the waveguide structure is deployed between the first and second dielectric portions and coupled to the ridge structures of the first and second dielectric portions. See, for example, [link to documentation]. Figure 8 .

[0075] It should also be understood that the examples and embodiments described herein are for illustrative purposes only, and various modifications or changes thereto will be suggested to those skilled in the art and will be included within the spirit and scope of this application and the scope of the appended claims.

Claims

1. An apparatus comprising: First dielectric electrode; The second dielectric electrode is separated from the first dielectric electrode by a gap; A waveguide structure, wherein the waveguide structure is electrically connected to a first dielectric electrode and a second dielectric electrode, The first and second dielectric electrodes can be controlled to apply an electric field within the waveguide structure. The waveguide structure comprises a material having a first dielectric constant in one direction. The first dielectric electrode and the second dielectric electrode include a second dielectric constant in the direction stated therein, the second dielectric constant in the direction stated therein being greater than the first dielectric constant in the direction stated therein. The first dielectric electrode and the second dielectric electrode are separated along the said direction.

2. The device as described in claim 1, The first and second dielectric electrodes, along with the waveguide structure, are deployed within a single layer comprising a first width. The waveguide structure is deployed within the single layer between the first dielectric electrode and the second dielectric electrode.

3. The device as described in claim 1, The first dielectric electrode includes a first ridge portion having a first thickness, the first thickness being greater than the second thickness of the remaining portion of the first dielectric electrode. The second dielectric electrode includes a second ridge portion having a first thickness, wherein the remaining portion of the second dielectric electrode has a second thickness. The waveguide structure has a first thickness, and The first ridge portion, the second ridge portion, and the waveguide structure extend into the first cladding layer.

4. The device of claim 1, wherein the waveguide structure comprises a ridge portion and a planar layer.

5. The device of claim 4, wherein the ridge portion is deployed on a first side of the planar layer and extends into a first covering layer of the device, and wherein the first dielectric electrode and the second dielectric electrode are coupled to the planar layer on a second side of the planar layer opposite to the first side.

6. The device of claim 4, wherein the flat plate layer is made of a different material than the ridge portion.

7. The device of claim 4, wherein the plate layer is composed of barium titanate, and The ridge section is made of silicon nitride.

8. The device of claim 4, wherein the ridge portion is made of the material.

9. The device of claim 4, wherein the ridge is disposed on a first side of the flat plate layer and extends into the first covering layer of the device, and The first dielectric electrode and the second dielectric electrode are coupled to the plate layer on the first side of the plate layer.

10. The device of claim 4, wherein the ridge portion is disposed on a first side of the flat plate layer and extends into the first covering layer of the device. The first dielectric electrode and the second dielectric electrode are coupled to the planar layer on the second side of the planar layer opposite to the first side.

11. The apparatus of claim 10, further comprising: The first electrical contact includes a first dielectric electrode. The second electrical contact includes a second dielectric electrode.

12. The device of claim 11, wherein the first electrical contact is coupled to the first dielectric electrode by passing through the planar layer from a second side of the planar layer to a first side of the planar layer, and The second electrical contact is coupled to the second dielectric electrode by passing through the plate layer from the second side of the plate layer to the first side of the plate layer.

13. The device as claimed in claim 1, The first and second dielectric electrodes are made of strontium titanate, and The waveguide structure is made of barium titanate.

14. The device as claimed in claim 1, The waveguide structure includes a planar layer, a first strip waveguide section, and a second strip waveguide section. The first and second strip waveguide sections are respectively composed of a second material and a third material, and The flat plate layer is deployed between the first and second strip waveguide sections.

15. The device of claim 14, wherein the second material and the third material are silicon nitride.

16. The device of claim 1, wherein the refractive index of the material is greater than the refractive index of one or more coating layers in the device.

17. The device of claim 1, wherein the ratio between the second dielectric constant of the first dielectric electrode and the second dielectric electrode and the first dielectric constant of the material in the said direction is 2 or greater.

18. The device of claim 1, wherein the waveguide structure comprises a planar layer, and The direction mentioned includes a direction parallel to the surface of the flat plate layer.

19. An optical switch, comprising: The input port is used to couple light into the optical switch; A Mach-Zehnder interferometer includes a first arm and a second arm, and a phase shifter on the second arm for applying a phase shift to light to form phase-shifted light. The phase shifter includes a first dielectric electrode and a second dielectric electrode, the second dielectric electrode being separated from the first dielectric electrode by a gap. The phase shifter also includes a waveguide structure electrically connected to the first and second dielectric electrodes. The first and second dielectric electrodes can be controlled to apply an electric field within the waveguide structure. The waveguide structure includes a material having a first dielectric constant in one direction, the first and second dielectric electrodes having a second dielectric constant in the same direction, the second dielectric constant being greater than the first dielectric constant in the same direction, and the first and second dielectric electrodes being separated along the same direction. as well as One or more output ports for outputting phase-shifted light from an optical switch.

20. The optical switch of claim 19, wherein the first dielectric electrode, the second dielectric electrode, and the waveguide structure are deployed within a single layer including a first width, wherein the waveguide structure is deployed between the first dielectric electrode and the second dielectric electrode within the single layer.

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