Photovoltaic module

Abstract

The application relates to a photovoltaic module, comprising a back contact cell main body and a light storage layer, the back contact cell main body comprising a back contact cell and a light conversion layer, the light conversion layer being arranged on a light receiving surface of the back contact cell, the light storage layer being connected with the back contact cell main body through a hinge structure, and the light storage layer being capable of at least partially covering the light conversion layer. The light conversion layer can convert ultraviolet light and long-wave infrared light which cannot be absorbed by crystalline silicon into high-response visible light / near-infrared light, thereby improving the effective incidence and absorption efficiency of front light; the light storage layer is connected with the back contact cell main body in a hinge structure mode, the light storage layer can effectively store sunlight through the hinge structure under high light intensity, the stored energy can drive the light conversion layer to release high-response photons, an effective light source is continuously provided for the back contact cell, and the daily effective power generation duration is prolonged.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, and in particular to photovoltaic modules. Background Technology

[0002] Crystalline silicon photovoltaic cells are widely used in centralized photovoltaic power plants, distributed rooftop power generation, and portable energy devices due to their mature manufacturing processes, stable power generation performance, and economies of scale. However, crystalline silicon photovoltaic cells are dependent on the intensity of incident sunlight. In cases of insufficient sunlight, such as cloudy, rainy, or snowy days, their photoelectric conversion efficiency drops sharply. Furthermore, at night, without sunlight, the cells cannot generate photogenerated carriers, completely interrupting the power generation process. In other words, traditional crystalline silicon photovoltaic cells have a short effective daily power generation time, resulting in low utilization efficiency of photovoltaic systems and making it difficult to meet users' demands for a stable power supply.

[0003] Therefore, it is necessary to improve traditional technologies. Summary of the Invention

[0004] Based on this, this application provides a photovoltaic module that can effectively extend the daily effective power generation time.

[0005] The technical solution to the above-mentioned technical problems in this application is as follows.

[0006] The first aspect of this application provides a photovoltaic module, including a back contact cell body and a light storage layer. The back contact cell body includes a back contact cell and a light conversion layer. The light conversion layer is disposed on the light-receiving surface of the back contact cell. The light storage layer is connected to the back contact cell body through a hinge structure. The light storage layer can at least partially cover the light conversion layer.

[0007] In some embodiments, the photovoltaic module includes a first light storage sublayer and a second light storage sublayer stacked sequentially, wherein one of the first light storage sublayer and the second light storage sublayer includes an infrared long-afterglow material, and the other of the first light storage sublayer and the second light storage sublayer includes an ultraviolet-visible long-afterglow material.

[0008] In some embodiments, in a photovoltaic module, the first light storage sublayer includes a first light storage sublayer A and a first light storage sublayer B, and the second light storage sublayer includes a second light storage sublayer A and a second light storage sublayer B. The first light storage sublayer A, the first light storage sublayer B, the second light storage sublayer A, and the second light storage sublayer B are stacked sequentially. Both the first light storage sublayer A and the first light storage sublayer B include infrared long-afterglow materials, and both the second light storage sublayer A and the second light storage sublayer B include ultraviolet-visible long-afterglow materials.

[0009] In some embodiments, the photovoltaic module satisfies at least one of the following characteristics:

[0010] (1) The first optical storage sublayer A includes Zn3Ga2Ge2O 10 :Cr 3+ and Ca2SnO4:Tm 3+ &Ho 3+ At least one of them;

[0011] (2) The first optical storage sublayer B comprises Zr3Ga2GeO8:Cr 3+ ,Yb 3+ Er 3+ and

[0012] Zn3Ga 1.99-y-z Ge2O 10 1Cr 3+ ,yYb 3+ ,zEr 3+ At least one of them, wherein 0 <y<1,0<z<1;

[0013] (3) The second optical storage sublayer A includes Ca3SnSi2O9:Sm 3+ and CaMgSi2O6:Dy 3+ At least one of them;

[0014] (4) The second optical storage sublayer B includes

[0015] αGeO2:βQ2O3:γZnO:δLa2O3:εLi2O: σMnO:ωYb2O3,

[0016] Wherein, Q is selected from at least one of B and Ga, expressed as a percentage in molar ratios.

[0017] α:β:γ:δ:ε:σ:ω=20%~40%:20%~40%:10%~49%:5%~20%:5%~20%:0.1%~2%:0.1%~3%.

[0018] In some embodiments, in the photovoltaic module, the first light storage sublayer and the second light storage sublayer each independently comprise a polymer resin, and the infrared long-afterglow material or the ultraviolet-visible long-afterglow material is doped into the polymer resin.

[0019] In some embodiments, the photovoltaic module satisfies at least one of the following characteristics:

[0020] (1) The doping amount of the infrared long afterglow material or the ultraviolet-visible long afterglow material is independently 10 wt%~30 wt%;

[0021] (2) The polymeric resin includes at least one of ethylene-α-olefin copolymer, ethylene-acrylic acid copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl methacrylate copolymer, ethyl-methacrylate copolymer, ethylene-butyl acrylate copolymer, polyvinyl butyral and ethylene-vinyl acetate copolymer.

[0022] In some embodiments, the photovoltaic module further includes a first glass layer, a second glass layer, and a reflective layer, wherein the first glass layer, the reflective layer, the first light storage sub-layer, the second light storage sub-layer, and the second glass layer are stacked sequentially.

[0023] In some embodiments, in a photovoltaic module, the reflective layer includes alternating layers of high-refractive-index material and low-refractive-index material, wherein the high-refractive-index material layer includes at least one of silicon nitride, titanium oxide, and silicon carbide, and the low-refractive-index material layer includes at least one of silicon oxide, magnesium fluoride, and aluminum oxide.

[0024] In some embodiments, in a photovoltaic module, the surface of the first glass layer near the reflective layer has a textured surface.

[0025] In some embodiments, in a photovoltaic module, the light conversion layer includes a first light conversion sublayer and a second light conversion sublayer stacked together, the second light conversion sublayer being disposed on the side of the first light conversion sublayer away from the back contact cell, one of the first light conversion sublayer and the second light conversion sublayer including a light up conversion material, and the other of the first light conversion sublayer and the second light conversion sublayer including a light down conversion material.

[0026] In some embodiments, in a photovoltaic module, the first light conversion sublayer includes a light up conversion material, and the second light conversion sublayer includes a light down conversion material.

[0027] In some embodiments, the photovoltaic module satisfies at least one of the following characteristics:

[0028] (1) The optical upconversion material includes a first rare earth ion pair doped nanomaterial, wherein the first rare earth ion pair in the first rare earth ion pair doped nanomaterial includes λLn 3+ / θYb 3+ Wherein, Ln is selected from at least one of Ho, Er, Ce and Tm, Ln1 3+ The molar doping amount λ is 5%~15%, Yb 3+ The molar doping amount θ is 10%~30%;

[0029] (2) The photo-down-conversion material includes at least one of a second rare-earth ion pair doped nanomaterial and an organic singlet exciton cleavage molecule doped infinite quantum dot material, wherein the second rare-earth ion pair in the second rare-earth ion pair doped nanomaterial includes ηLn2. 3+ / ρYb 3+ Ln2 is selected from at least one of Gd, Pr, Ho, Er, Nd, Ce, Tb, Dy, and Tm. 3+ The molar doping amount η is 10%~30%, Yb 3+ The doping molar amount ρ is 2%~10%, and the organic singlet exciton cleavage molecules in the organic singlet exciton cleavage molecule-doped infinite quantum dot material include at least one of perylene diimide, trinaphthalene diphenylimide, pyrrolopyrrole dione, perylene and rubrene. The infinite quantum dots in the organic singlet exciton cleavage molecule-doped infinite quantum dot material include at least one of lead sulfide and lead selenide.

[0030] In some embodiments, the photovoltaic module further includes a first aluminum frame and a second aluminum frame. The first aluminum frame is disposed around the back contact battery body, and the second aluminum frame is disposed around the light storage layer. The hinge structure includes a connecting shaft, and the first aluminum frame and the second aluminum frame are connected through the connecting shaft. The light storage layer is rotatable around the connecting shaft.

[0031] In some embodiments, in a photovoltaic module, the back contact battery body is connected to a first bracket, the light storage layer is connected to a second bracket, and the hinge structure is connected to a third bracket. The first bracket, the second bracket, and the third bracket are used to support the back contact battery body, the light storage layer, and the hinge structure on the ground, respectively.

[0032] In some embodiments, the photovoltaic module satisfies at least one of the following characteristics:

[0033] (1) The second bracket is a telescopic bracket;

[0034] (2) The materials of the connecting shaft, the first bracket, the second bracket and the third bracket are each independently selected from at least one of aluminum alloy, stainless steel and stainless copper.

[0035] The photovoltaic module of this application includes a back contact cell body and a light storage layer. The back contact cell body includes a back contact cell and a light conversion layer disposed on the light-receiving surface of the back contact cell. The light conversion layer can convert ultraviolet light and long-wave infrared light, which are difficult for crystalline silicon to absorb, into visible / near-infrared light with high crystalline silicon response, effectively improving the effective incident and absorption efficiency of front light and avoiding cell thermal degradation caused by ultraviolet light. At the same time, the light storage layer is connected to the back contact cell body by a hinge structure. Under high light intensity, the light storage layer can be opened through the hinge structure, effectively storing sunlight without affecting the light absorption efficiency of the back contact cell. It can also convert the heat loss of high-energy photons and photons in the near-infrared non-response region into photons in the high-response region of crystalline silicon. Under insufficient light conditions such as at night, on cloudy or snowy days, the light storage layer can at least partially cover the light conversion layer through the hinge structure. The stored energy can drive the light conversion layer to release high-response photons, continuously providing an "effective light source" for the back contact cell, avoiding the problem of power generation interruption in traditional back contact cells under weak light and extending the daily effective power generation time. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments of this application and to more completely understand this application and its beneficial effects, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 A schematic diagram of a photovoltaic module when it is turned on, according to one embodiment;

[0038] Figure 2 A schematic diagram of a photovoltaic module in a partially closed state according to one embodiment;

[0039] Figure 3 A schematic diagram of the structure of a photovoltaic module when it is closed, according to one embodiment;

[0040] Figure 4 This is a schematic diagram of the structure of the light storage layer in a photovoltaic module according to one embodiment;

[0041] Figure 5 This is a schematic diagram of the structure of the light conversion layer in a photovoltaic module according to one embodiment.

[0042] Figure label:

[0043] 10: Back contact battery body; 11: Back contact battery; 12: Light conversion layer; 121: First light conversion sub-layer; 122: Second light conversion sub-layer; 13: Third glass layer; 14: Fourth glass layer; 15: Second reflective layer;

[0044] 20: Optical storage layer; 21: First optical storage sublayer; 22: Second optical storage sublayer; 211: First optical storage sublayer A; 212: First optical storage sublayer B; 221: Second optical storage sublayer A; 222: Second optical storage sublayer B; 23: First glass layer; 24: Second glass layer; 25: First reflective layer;

[0045] 30: Hinge structure; 40: First support; 50: Second support; 60: Third support; 70: Telescopic shaft. Detailed Implementation

[0046] The present application will be further described in detail below with reference to the embodiments and examples. It should be understood that these embodiments and examples are only used to illustrate the present application and are not intended to limit the scope of the present application. The purpose of providing these embodiments and examples is to make the disclosure of the present application more thorough and comprehensive.

[0047] It should also be understood that this application can be implemented in many different forms and is not limited to the embodiments and examples described herein. Those skilled in the art can make various alterations or modifications without departing from the spirit of this application, and the resulting equivalent forms also fall within the protection scope of this application. For example, features described or illustrated as part of one embodiment can be combined in a suitable manner in another embodiment to produce new embodiments. Furthermore, numerous specific details are set forth in the following description to provide a fuller understanding of this application; it should be understood that this application can be implemented without one or more of these details.

[0048] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for descriptive purposes only and is not intended to be limiting of the application.

[0049] Unless otherwise stated or in case of contradiction, the terms or phrases used herein shall have the following meanings:

[0050] In this application, the terms "multiple", "various", "multiple times", etc., unless otherwise specified, refer to a quantity greater than or equal to 2. For example, "one or more" means one or more than or equal to two.

[0051] The terms “combinations of,” “any combination of,” and “any combination of” used in this article include all suitable combinations of any two or more of the listed items.

[0052] In this document, the term "suitable" as used in "suitable combination", "suitable method", "any suitable method", etc., refers to the ability to implement the technical solution of this application, solve the technical problem of this application, and achieve the expected technical effect of this application.

[0053] In this application, terms such as "further," "even further," and "particularly" are used to describe purposes and indicate differences in content, but should not be construed as limiting the scope of protection of this application.

[0054] In this application, the terms "first aspect," "second aspect," "third aspect," "fourth aspect," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or quantity, nor should they be construed as implicitly indicating the importance or quantity of the indicated technical features. Moreover, "first," "second," "third," "fourth," etc., serve only as a non-exhaustive enumeration and should be understood not to constitute a closed limitation on quantity.

[0055] In this application, the technical features described in an open-ended manner include both closed technical solutions consisting of the listed features and open technical solutions that include the listed features.

[0056] In this application, when numerical intervals (i.e., numerical ranges) are mentioned, unless otherwise specified, the distribution of selectable numerical values ​​within the numerical interval is considered continuous, and includes the two endpoints of the numerical interval (i.e., the minimum and maximum values), as well as every numerical value between these two endpoints. Unless otherwise specified, when a numerical interval refers only to integers within that numerical interval, it includes the two endpoint integers of the numerical range, as well as every integer between the two endpoints, which is equivalent to directly listing every integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical ranges disclosed herein should be understood to include any and all subranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, percentage, ratio, etc. The term "numerical interval" can be broadly included to include numerical interval types such as percentage intervals, ratio intervals, and proportion intervals.

[0057] Unless otherwise specified, the temperature parameters in this application are permitted to be either constant-temperature treatment or variations within a certain temperature range. It should be understood that the constant-temperature treatment allows temperature fluctuations within the precision range of the instrument control, such as ±5℃, ±4℃, ±3℃, ±2℃, or ±1℃.

[0058] In this application, the terms "room temperature" or "normal temperature" generally refer to 4℃ to 35℃, for example, 20℃ ± 5℃. In some embodiments of this application, "room temperature" or "normal temperature" refers to 10℃ to 30℃. In some embodiments of this application, "room temperature" or "normal temperature" refers to 20℃ to 30℃.

[0059] In this application, if the unit of a data range is only followed by the right endpoint, it indicates that the units of the left and right endpoints are the same. For example, 3~5 h means that the units of the left endpoint "3" and the right endpoint "5" are both h (hours).

[0060] All references to documents mentioned in this application are incorporated herein by reference as if each document were individually incorporated by reference. Unless they conflict with the inventive purpose and / or technical solution of this application, all cited documents are incorporated herein by reference in their entirety and for all purposes. When citing documents in this application, the definitions of relevant technical features, terms, nouns, phrases, etc., are also incorporated herein by reference. When citing documents in this application, examples and preferred embodiments of the cited technical features may also be incorporated herein by reference, but only to the extent that they enable the implementation of this application. It should be understood that when the cited content conflicts with the description in this application, this application shall prevail or modifications shall be made adaptably to the description in this application.

[0061] The mass or weight of the relevant components mentioned in the embodiments of this application can refer not only to the specific content of each component, but also to the proportional relationship of mass or weight between the components. Therefore, any scaling up or down of the content of the relevant components according to the embodiments of this application is within the scope disclosed in the embodiments of this application. Specifically, the mass or weight mentioned in the embodiments of this application can be units known in the chemical industry, such as μg, mg, g, and kg.

[0062] See Figure 1 One embodiment of this application provides a photovoltaic module, including a back contact battery body 10 and a light storage layer 20. The back contact battery body 10 includes a back contact battery 11 and a light conversion layer 12. The light conversion layer 12 is disposed on the light-receiving surface of the back contact battery 11. The light storage layer 20 is connected to the back contact battery body 10 through a hinge structure 30. The light storage layer 20 can at least partially cover the light conversion layer 12.

[0063] The photovoltaic module provided in this application features a light conversion layer that converts ultraviolet and long-wave infrared light, which are difficult for crystalline silicon to absorb, into visible / near-infrared light with high crystalline silicon response. This effectively improves the effective incident and absorption efficiency of front-side light and avoids battery thermal degradation caused by ultraviolet light. Simultaneously, a light storage layer is connected to the back-contact battery body using a hinge structure. Under high light intensity, the light storage layer can be opened via the hinge structure, effectively storing sunlight without affecting the light absorption efficiency of the back-contact battery. It can also convert the heat loss of high-energy photons and photons from the near-infrared non-responsive region into photons from the crystalline silicon high-response region. Under insufficient light conditions, such as at night, on cloudy or snowy days, the light storage layer can at least partially cover the light conversion layer via the hinge structure. The stored energy can drive the light conversion layer to release high-response photons, continuously providing an "effective light source" for the back-contact battery. This avoids the problem of power generation interruption in traditional back-contact batteries under weak light and extends the daily effective power generation time.

[0064] It's understandable that the light-receiving surface of the battery body is relative; in reality, the other side can also receive light. The relativity of the "light-receiving surface" not only refers to the "electrode position defining the functional surface," but can also be extended to "both sides can achieve light absorption through design." By optimizing the back passivation layer and electrode layout, the traditional "light-shielding surface" of a back-contact battery can become a "secondary light-receiving surface," ultimately achieving synergistic power generation through "efficient absorption of direct light on the primary surface + efficient absorption of reflected / scattered light on the secondary surface." It's also understandable that the functional layer located on the light-receiving surface of the battery body can be either the first light conversion sublayer within the functional layer being adjacent to the battery body (i.e., the first light conversion sublayer being located between the battery body and the second light conversion sublayer), or the second light storage sublayer being adjacent to the battery body (i.e., the second light storage sublayer being located between the battery body and the first light storage sublayer). See also... Figure 1 The optical storage layer 20 can at least partially cover the optical conversion layer 12, meaning that under high light intensity, the optical storage layer 20 can be opened via the hinge structure 30, at which point the optical storage layer 20 may not cover the optical conversion layer 12; see also Figure 2 and Figure 3 When there is insufficient light, such as at night, on cloudy or snowy days, the optical storage layer 20 can be closed by the hinge structure 30, at which time at least part of the optical storage layer 20 can cover the optical conversion layer 12.

[0065] In some examples, the photovoltaic module further includes a first aluminum frame and a second aluminum frame. The first aluminum frame is disposed around the back contact cell body, and the second aluminum frame is disposed around the light storage layer. The hinge structure includes a connecting shaft, and the first aluminum frame and the second aluminum frame are connected by the connecting shaft. The light storage layer can rotate around the connecting shaft.

[0066] See also Figure 1In some examples, in a photovoltaic module, the back contact cell body 10 is connected to a first support 40, the light storage layer 20 is connected to a second support 50, and the hinge structure 30 is connected to a third support 60. The first support 40, the second support 50, and the third support 60 are used to support the back contact cell body 10, the light storage layer 20, and the hinge structure 30 on the ground, respectively.

[0067] In some examples, the second support 50 in the photovoltaic module is a telescopic support. It can be understood that when the photovoltaic storage layer 20 is closed via the hinge structure 30, the second support 50, being a telescopic support, extends to provide sufficient support for the photovoltaic storage layer 20 in real time, preventing the photovoltaic storage layer 20 from sagging due to insufficient support height, thus avoiding additional pressure on the hinge structure 30 and effectively extending the overall lifespan of the module. When the photovoltaic storage layer 20 is opened via the hinge structure 30, the telescopic support shortens, thus adapting to the tilt angle of the photovoltaic storage layer 20 after rotation around the hinge structure 30, avoiding pulling or pushing between the second support 50 and the photovoltaic storage layer 20, ensuring a smooth opening process.

[0068] In some examples, the photovoltaic module also includes at least one retractable shaft 70, which connects a first aluminum frame and a second aluminum frame. Optionally, the retractable shaft 70 connects to the end of the first and second aluminum frames that is not connected to the connecting shaft. Further, the retractable shaft 70 can be controlled by a motor. In situations of insufficient sunlight, such as at night, on cloudy or snowy days, the light storage layer 20 is programmed to close via the hinge structure 30. When the closing angle between the light storage layer 20 and the back contact battery body 10 is ≤90°, the motor is activated, and the retractable shaft 70 retracts, facilitating the closure of the light storage layer 20 and the back contact battery body 10.

[0069] In some of these examples, the materials of the connecting shaft, the telescopic shaft, the first bracket, the second bracket, and the third bracket in the photovoltaic module are each independently selected from at least one of aluminum alloy, stainless steel, and stainless copper.

[0070] In some of these examples, the first and second aluminum frames in the photovoltaic module are connected to the hinge structure (connecting shaft) and the retractable shaft by means of welding.

[0071] It is understood that the first aluminum frame may contain one or more back-contact battery bodies; further, it is understood that in order to ensure the stability of the welding of the first aluminum frame and the second aluminum frame to the connecting shaft, the first aluminum frame and the second aluminum frame may be widened and thickened.

[0072] See Figure 4In some examples, the photovoltaic module includes a light storage layer 20 comprising a first light storage sublayer 21 and a second light storage sublayer 22 stacked sequentially. One of the first light storage sublayer 21 and the second light storage sublayer 22 includes an infrared long-afterglow material, and the other of the first light storage sublayer 21 and the second light storage sublayer 22 includes an ultraviolet-visible long-afterglow material.

[0073] The simultaneous presence of long-afterglow materials in both the infrared and ultraviolet-visible regions within the optical storage layer is beneficial for full-spectrum solar energy storage.

[0074] See also Figure 4 In some examples, in a photovoltaic module, the first light storage sublayer 21 includes a first light storage sublayer A 211 and a first light storage sublayer B 212, and the second light storage sublayer 22 includes a second light storage sublayer A 221 and a second light storage sublayer B 222. The first light storage sublayer A 211, the first light storage sublayer B 212, the second light storage sublayer A 221, and the second light storage sublayer B 222 are stacked sequentially. The first light storage sublayer A 211 and the first light storage sublayer B 212 both include infrared long-afterglow materials, and the second light storage sublayer A 221 and the second light storage sublayer B 222 both include ultraviolet-visible long-afterglow materials.

[0075] Multilayer optical storage layers can store the full spectrum of solar energy and convert the thermal loss of high-energy photons and photons in the near-infrared non-response region into photons in the high-response region of crystalline silicon solar cells.

[0076] It can be understood that the basic luminescence mechanism of infrared long-persistence materials is the "persistence" luminescence mechanism. "Persistence" refers to the continuation of luminescence after excitation ceases, or the continuous emission of light by the luminescent material after excitation stops. Furthermore, infrared long-persistence materials also include infrared long-persistence upconversion materials, which encompass both "upconversion" and "persistence" luminescence mechanisms in the infrared region. "Upconversion" is a nonlinear optical process in which two or more long-wavelength photons are superimposed and converted into short-wavelength photons. Simply put, it converts low-energy excitation light (typically in the near-infrared) into high-energy emission (typically in the visible light), which can convert infrared light into photons in the high-response region of the crystalline silicon solar cell spectrum. In some examples, the first optical storage sublayer A includes an infrared long-persistence material (without the "upconversion" luminescence mechanism), and the first optical storage sublayer B includes an infrared long-persistence upconversion material.

[0077] Optionally, the first optical storage sublayer A 211 includes Zn3Ga2Ge2O 10 :Cr 3+ and Ca2SnO4:Tm 3+ &Ho 3+ At least one of them.

[0078] Optionally, the first optical storage sublayer B 212 comprises Zr3Ga2GeO8:Cr 3+ ,Yb 3+ Er 3+ and Zn3Ga 1.99-y- z Ge2O 10 1Cr 3+ ,yYb 3+ ,zEr 3+ At least one of them, wherein 0 <y<1,0<z<1。

[0079] It's understandable, Zn3Ga 1.99-y-z Ge2O 10 1Cr 3+ ,yYb 3+ ,zEr 3+ and Zr3Ga2GeO8:Cr 3+ ,Yb 3+ Er 3+ It possesses both "afterglow" and "upconversion" luminescence mechanisms, belonging to infrared long afterglow upconversion materials; Zn3Ga2Ge2O 10 :Cr 3+ Ca2SnO4:Tm 3+ &Ho 3+ It has a "afterglow" emission mechanism but not an "upconversion" emission mechanism. It belongs to infrared long afterglow materials but not infrared long afterglow upconversion materials.

[0080] It is understandable that the basic luminescence mechanism of UV-Vis long-persistence materials is the "persistence" luminescence mechanism. UV-Vis long-persistence materials also include UV-Vis long-persistence downconversion materials, which incorporate both "downconversion" and "persistence" luminescence mechanisms. "Downconversion" is a nonlinear / linear optical process with the energy conversion direction completely opposite to that of "upconversion." Its core is to decompose a single high-energy, short-wavelength photon into two or more low-energy, long-wavelength photons, achieving a "high-energy light → low-energy light" conversion. It can convert UV-Vis light into photons in the high-response region of the crystalline silicon solar cell spectrum. Essentially, it is a "splitting and utilization" of photon energy, rather than the "energy superposition" of upconversion. In some examples, the second optical storage sublayer A includes UV-Vis long-persistence materials (without a "downconversion" luminescence mechanism), and the second optical storage sublayer B includes UV-Vis long-persistence downconversion materials.

[0081] Optionally, the second optical storage sublayer A 221 comprises Ca3SnSi2O9:Sm 3+ and CaMgSi2O6:Dy 3+ At least one of them.

[0082] Optionally, the second optical storage sublayer B 222 includes

[0083] αGeO2:βQ2O3:γZnO:δLa2O3:εLi2O:σMnO:ωYb2O3,

[0084] Wherein, Q is selected from at least one of B and Ga, expressed as a percentage in molar ratios.

[0085] α:β:γ:δ:ε:σ:ω=20%~40%:20%~40%:10%~49%:5%~20%:5%~20%:0.1%~2%:0.1%~3%.

[0086] It can be understood that αGeO2:βQ2O3:γZnO:δLa2O3:εLi2O:σMnO:ωYb2O3 contains both "downconversion" and "afterglow" luminescence mechanisms, belonging to the ultraviolet-visible long afterglow downconversion materials; Ca3SnSi2O9:Sm 3+ CaMgSi2O6:Dy 3+ It has an "afterglow" luminescence mechanism but not a "downconversion" luminescence mechanism. It belongs to the ultraviolet-visible long afterglow materials but not to the ultraviolet-visible long afterglow downconversion materials.

[0087] It is understood that, in percentage terms, α includes, but is not limited to, 20%, 25%, 30%, 35%, and 40%; β includes, but is not limited to, 20%, 25%, 30%, 35%, and 40%; γ includes, but is not limited to, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, and 49%; δ includes, but is not limited to, 5%, 10%, 15%, and 20%; ε includes, but is not limited to, 5%, 10%, 15%, and 20%; σ includes, but is not limited to, 0.1%, 0.5%, 1%, and 2%; and ω includes, but is not limited to, 1%, 2%, and 3%. In some examples, any two of these point values ​​can be used as endpoints within a range, and the same applies below.

[0088] Optionally, the second optical storage sublayer B 222 is located close to the optical conversion layer 12. It can be understood that the second optical storage sublayer B 222 being close to the optical conversion layer 12 means that when the optical storage layer at least partially covers the optical conversion layer through the hinge structure, the second optical storage sublayer B 222 is closer to the optical conversion layer 12 than the first optical storage sublayer B 211.

[0089] In some of these examples, the first light storage sublayer 21 and the second light storage sublayer 22 in the photovoltaic module each independently comprise a polymer resin, with either an infrared long-afterglow material or an ultraviolet-visible long-afterglow material doped into the polymer resin.

[0090] In some examples, the doping amount of infrared long-afterglow material or ultraviolet-visible long-afterglow material in the photovoltaic module is independently 10 wt% to 30 wt%. It can be understood that the doping amount refers to the percentage by mass of the infrared or ultraviolet-visible long-afterglow material in the first and / or second photoelectric storage sublayers when the matrix is ​​a polymer resin; for example, when the first photoelectric storage sublayer includes infrared long-afterglow material, the mass percentage of the infrared long-afterglow material in the first photoelectric storage sublayer is 10 wt% to 30 wt%. It can be further understood that when the first and / or second photoelectric storage sublayers each contain two or more layers, the doping amount of infrared or ultraviolet-visible long-afterglow material in each layer also satisfies 10 wt% to 30 wt%. It can also be understood that the doping amount of the infrared long-afterglow material or the ultraviolet-visible long-afterglow material is independently, but not limited to, 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%, 20 wt%, 21 wt%, 22 wt%, 23 wt%, 24 wt%, 25 wt%, 26 wt%, 27 wt%, 28 wt%, 29 wt%, and 30 wt%.

[0091] In some of these examples, the polymer resin in the photovoltaic module includes at least one of ethylene-α-olefin copolymer, ethylene-acrylic acid copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl methacrylate copolymer, ethyl-methacrylate copolymer, ethylene-butyl acrylate copolymer, polyvinyl butyral, and ethylene-vinyl acetate copolymer.

[0092] In some examples, the thicknesses of the first photoelectric storage sublayer A 211, the first photoelectric storage sublayer B 212, the second photoelectric storage sublayer A 221, and the second photoelectric storage sublayer B 222 in the photovoltaic module are independently 200μm to 500μm. It can be understood that the thicknesses of the first photoelectric storage sublayer A 211, the first photoelectric storage sublayer B 212, the second photoelectric storage sublayer A 221, and the second photoelectric storage sublayer B 222 can be the same or different; further, it can be understood that the thicknesses of the first photoelectric storage sublayer A 211, the first photoelectric storage sublayer B 212, the second photoelectric storage sublayer A 221, and the second photoelectric storage sublayer B 222 are... The thickness of 222 is independently including, but not limited to, 200μm, 210μm, 220μm, 230μm, 240μm, 250μm, 260μm, 270μm, 280μm, 290μm, 300μm, 310μm, 320μm, 330μm, 340μm, 350μm, 360μm, 370μm, 380μm, 390μm, 400μm, 410μm, 420μm, 430μm, 440μm, 450μm, 460μm, 470μm, 480μm, 490μm, and 500μm.

[0093] See also Figure 4 In some examples, the photovoltaic module's light storage layer 20 further includes a first glass layer 23, a second glass layer 24, and a first reflective layer 25, which are stacked sequentially.

[0094] Adding a first reflective layer 25 between the first light storage sub-layer 21 and the first glass layer 23 can, on the one hand, reduce back light loss when the light storage layer emits light at night and change the direction of light so that it enters the solar cell; on the other hand, it can reduce light transmission loss when the light storage layer absorbs light during the day and change the direction of light so that it enters the light storage layer.

[0095] In some examples, in the photovoltaic module, the first reflective layer 25 includes alternating layers of high-refractive-index material and low-refractive-index material. Optionally, the high-refractive-index material layer includes at least one of silicon nitride, titanium oxide, and silicon carbide, and the low-refractive-index material layer includes at least one of silicon oxide, magnesium fluoride, and aluminum oxide.

[0096] It is understandable that alternating layers of high-refractive-index and low-refractive-index materials can form a Bragg reflection layer; for example, SiOx / SiNx / ...SiOx / SiNx stacked sequentially, "SiOx / SiNx / ...SiOx / SiNx" means that "SiOx / SiNx" can be repeated 5 to 10 times.

[0097] In some of these examples, the surface of the first glass layer 23 near the reflective layer has a textured surface.

[0098] The surface of the first glass layer 23 near the first reflective layer 25 has a textured surface, which reduces light reflection.

[0099] In some of these examples, in the photovoltaic module, at least one of the first glass layer 23 and the second glass layer 24 includes at least one of an infrared long-afterglow material and an ultraviolet-visible long-afterglow material.

[0100] Setting infrared long-afterglow materials and / or ultraviolet-visible long-afterglow materials in the glass layer of the optical storage layer is beneficial for full-spectrum solar energy storage.

[0101] See Figure 5 In some examples, in a photovoltaic module, the light conversion layer 12 includes a first light conversion sublayer 121 and a second light conversion sublayer 122 stacked together. The second light conversion sublayer 122 is disposed on the side of the first light conversion sublayer 121 away from the back contact cell 11. One of the first light conversion sublayer 121 and the second light conversion sublayer 122 includes a light up conversion material, and the other of the first light conversion sublayer 121 and the second light conversion sublayer 122 includes a light down conversion material.

[0102] Simultaneously, a multi-layer light conversion layer including light up-conversion materials and light down-conversion materials can effectively convert ultraviolet light and long-wave infrared light, which are difficult for crystalline silicon to absorb, into visible / near-infrared light with high crystalline silicon response, further improving the effective incident and absorption efficiency of front light, while avoiding battery thermal degradation caused by ultraviolet light.

[0103] It is understood that the light conversion layer 12 may have two or more layers; it is also understood that in some examples, in photovoltaic modules, both the light storage layer and the light conversion layer include light up conversion materials and light down conversion materials.

[0104] In some of these examples, in a photovoltaic module, a first light conversion sublayer 121 includes a light up conversion material and a second light conversion sublayer 122 includes a light down conversion material.

[0105] Photoconversion materials exhibit strong absorption in the infrared region below 1100 nm and possess high photoluminescence quantum efficiency.

[0106] In some examples, in back-contact solar cells, a first light conversion sublayer, a second light conversion sublayer, a first light storage sublayer, and a second light storage sublayer are sequentially disposed on the cell body. The first light conversion sublayer includes a light up-conversion material, the second light conversion sublayer includes a light down-conversion material, the first light storage sublayer includes an infrared up-conversion long-afterglow material, and the second light storage sublayer includes an ultraviolet-visible down-conversion long-afterglow material. This achieves high light absorption efficiency.

[0107] In some examples, in back-contact solar cells, the light upconversion material comprises a first rare-earth ion pair doped with a first nanomaterial, wherein the first rare-earth ion pair in the first rare-earth ion pair doped with the nanomaterial includes λLn1. 3+ / θYb 3+ Ln1 is selected from at least one of Ho, Er, Ce and Tm. 3+ The molar doping amount λ is 5%~15%, Yb 3+ The molar doping amount θ is 10%~30%. It can be understood that λ includes, but is not limited to, 5%, 10%, and 15%, and θ includes, but is not limited to, 10%, 15%, 20%, 25%, and 30%.

[0108] Optionally, the first rare earth ion pair includes Yb 3+ / Er 3+ Yb 3+ / Tm 3+ Yb 3+ / Ho 3+ 、Nd 3+ / Yb 3+ / Er 3+ Yb 3+ / Ho 3+ / Ce 3+ Yb 3+ / Ho 3+ / Mn 2+ At least one of them.

[0109] Optionally, the matrix doped by the first rare earth ion pair includes at least one of rare earth fluorides, rare earth oxides, rare earth halides, rare earth halide oxides, rare earth sulfur oxides, and PbF2-CdF2.

[0110] Optionally, the rare earth fluorides include at least one of NaYF4, CaF2, GdF3 and LiYF4; the rare earth oxides include at least one of ZrO2, Gd2O3 and NaY(WO4)2; the rare earth halides include Cs3Lu2Br; the rare earth halide oxides include YOCl3; and the rare earth sulfur oxides include La2O2S.

[0111] In some of these examples, the light upconversion material in the back-contact solar cell includes NaYF4:λLn1. 3+ / θYb 3+ @NaYF4、ZrO2:λLn1 3+ / θYb 3+ and CaF2:λLn1 3+ / θYb 3+ At least one of them.

[0112] In some examples, in back-contact solar cells, the photo-down-conversion material includes at least one of second rare-earth ion-pair doped nanomaterials and organic singlet exciton cleavage molecule doped inorganic quantum dot materials, wherein the second rare-earth ion pair in the second rare-earth ion-pair doped nanomaterial includes ηLn2. 3+ / ρYb 3+ Ln2 is selected from at least one of Gd, Pr, Ho, Er, Nd, Ce, Tb, Dy, and Tm. 3+ The molar doping amount η is 10%~30%, Yb 3+ The molar doping amount ρ is 2%~10%. This can be understood as Ln2... 3+ The molar doping amount η includes, but is not limited to, 10%, 15%, 20%, 25%, and 30%; Yb 3+ The molar doping amount ρ includes, but is not limited to, 2%, 3%, 5%, 8%, and 10%.

[0113] It is understandable that the second rare earth ion pair includes Gd. 3+ / Yb 3+ Ce 3+ / Yb 3+ Pr 3+ / Yb 3+ Er 3+ / Yb 3+ 、Nd 3+ / Yb 3 + Ho 3+ / Yb 3+ Dy 3+ / Yb 3+ Tm 3+ / Yb 3+ and Tb 3+ / Yb 3+ At least one of them.

[0114] Optionally, the matrix for the second rare earth ion pair doping includes at least one of perovskite quantum dots, inorganic nanomaterials, graphene, silicon quantum dots, phosphates, borates, and silicates, and the inorganic nanomaterials include at least one of LiGdF4, YVO4, SrAl2O4, NaYF4, ZnSe, ZnS, n-ZnO, and TiO2.

[0115] Optionally, the perovskite quantum dots include Cs(Pb / Cr)Cl 1.5 Br 1.5 At least one of CsPbCl3; phosphates include YPO4.

[0116] Optionally, the second rare earth ion pair doped nanomaterial includes YPO4:Yb 3+ / Tm 3+Cr / Yb-QD@ZnS(Cs(Pb / Cr)Cl 1.5 Br 1.5 :Yb 3+ @ZnS and CsPbCl3:Ln2 3+ .

[0117] Optionally, the organic singlet exciton cleavage molecules in the organic singlet exciton cleavage molecule-doped infinite quantum dot material include at least one of perylene diimide (PDI), trinaphthalene diphenylimide (TDI), pyrrolopyrrole dione (DPP), perylene, and rubrogene, and the infinite quantum dots in the organic singlet exciton cleavage molecule-doped infinite quantum dot material include at least one of lead sulfide (PbS) and lead selenide (PbSe).

[0118] It is understandable that inorganic quantum dots have a photoluminescence quantum efficiency of >90% and a suitable band gap of around 1.2 eV.

[0119] In some examples, the thicknesses of the first light conversion sublayer 121 and the second light conversion sublayer 122 in the photovoltaic module are independently 200 nm to 500 nm. It is understood that the thicknesses of the first and second light conversion sublayers can be the same or different; further, it is understood that the thicknesses of the first and second light conversion sublayers are independently, but not limited to, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, and 500 nm.

[0120] See also Figure 5 In some examples, the back contact cell body 10 of the photovoltaic module also includes a third glass layer 13 and a fourth glass layer 14, wherein the third glass layer 13 is disposed on the side of the back contact cell 11 away from the light conversion layer 12, and the fourth glass layer 14 is disposed on the side of the light conversion layer 12 away from the back contact cell 11.

[0121] See also Figure 5 In some of these examples, the back contact cell body 10 of the photovoltaic module also includes a second reflective layer 15.

[0122] Compared to simply coating long-afterglow materials onto the surface of solar cells to store solar energy, where a material that is too thin affects the amount of light stored and a material that is too thick affects the amount of light incident on the solar cell, this application employs a hinge structure to simultaneously perform light storage and photoelectric conversion. A light conversion layer is placed on the back contact surface of the cell to utilize the heat loss from high-energy ultraviolet-visible light and the non-absorbable infrared light. Instead of using a single type of light storage material, this application uses long-afterglow storage materials, long-afterglow up-conversion materials, and long-afterglow down-conversion materials with complementary absorption spectra. Furthermore, a reflective layer is added to the back of the light storage layer to change the direction of light and reduce light loss during absorption and emission of the long-afterglow storage material.

[0123] In some of these examples, the back contact cells in the photovoltaic modules include one of HBC cells (hybrid back contact heterogeneous cells), TBC cells (tunneling back contact cells), and HTBC cells (hybrid tunneling back contact cells).

[0124] It is understood that this application does not limit the functional layers of HBC batteries, TBC batteries, and HTBC batteries; any implementation in this field is acceptable.

[0125] One embodiment of this application provides a method for preparing a photovoltaic module, comprising the following steps:

[0126] Step S100: Prepare the back contact battery body.

[0127] In some of these examples, step S100 includes the following steps:

[0128] A light conversion layer is prepared on a back contact battery; optionally, the preparation method includes, but is not limited to, one of the following: blade coating, spin coating, laser sputtering, magnetron sputtering and electron beam evaporation; optionally, the preparation of the light conversion layer includes: incorporating a light upconversion material and a light upconversion material into a polymer resin and pressing them together.

[0129] In some of these examples, step S100 includes the following steps:

[0130] Step S110: Mix the photo-upconversion material and the first solvent to prepare a first mixed solution; optionally, the concentration of the photo-upconversion material in the first mixed solution is 20 mg / mL to 40 mg / mL; optionally, the first solvent includes at least one of cyclohexane and toluene;

[0131] Step S120: The first mixed solution is coated onto the back contact battery and then subjected to first annealing; optionally, the temperature of the first annealing is 30℃~50℃ and the time of the first annealing is ≥30 min; optionally, the time of the first annealing is 30 min~100 min.

[0132] Step S130: Mix the photo-down-conversion material and the second solvent to prepare a second mixed solution; optionally, the second solvent includes toluene;

[0133] Optionally, step S130 includes:

[0134] Organic singlet exciton cleavage molecules and inorganic quantum dots are ligand exchanged to form a second mixed solution; optionally, the concentration of inorganic quantum dots in the second mixed solution is 15 mg / mL to 35 mg / mL.

[0135] Step S140: The second mixed solution is coated onto the first light conversion layer and then annealed; optionally, the temperature of the second annealing is 100℃~150℃ and the time of the second annealing is 15 min~30 min; optionally, the coating is carried out in a nitrogen glove box.

[0136] In some examples, in step S100, the back contact cell with the light conversion layer is assembled with the third glass layer and the fourth glass layer in the following order: third glass layer, back contact cell, light conversion layer, and fourth glass layer. Optionally, before assembly, the assembly further includes: preparing a second reflective layer on the third glass layer; and assembling the cells in the following order: third glass layer, second reflective layer, back contact cell, light conversion layer, and fourth glass layer.

[0137] Step S200: Prepare the optical storage layer.

[0138] In some of these examples, step S200 includes the following steps:

[0139] Step S210: Prepare a first reflective layer on the surface of the first glass layer; optionally, the method of preparing the first reflective layer includes, but is not limited to, one of spin coating, blade coating, plasma-enhanced chemical vapor deposition and magnetron sputtering;

[0140] Step S220: Sequentially prepare a first optical storage sublayer and a second optical storage sublayer on the first reflective layer; optionally, prepare a first optical storage sublayer A 211, a first optical storage sublayer B 212, a second optical storage sublayer A 221, and a second optical storage sublayer B 222 on the first reflective layer; optionally, the preparation method includes, but is not limited to, one of the following: blade coating, spin coating, laser sputtering, magnetron sputtering, and electron beam evaporation; optionally, the preparation of the first and second optical storage sublayers includes: incorporating long-afterglow materials in the infrared region and long-afterglow materials in the ultraviolet-visible region into polymer resins and pressing them;

[0141] Step S230: Set a second glass layer on the second optical storage sublayer.

[0142] Step S300: Connect the optical storage layer to the back contact battery body using a hinge structure.

[0143] The present application will be described in further detail below with reference to specific embodiments, but the embodiments of the present application are not limited thereto.

[0144] Example 1

[0145] (1) The photo-upconversion material and the first solvent are mixed to prepare a first mixed solution; the concentration of the photo-upconversion material in the first mixed solution is 20 mg / mL to 40 mg / mL, and the photo-upconversion material is CaF2:λEr 3+ / θYb 3+ λ is 5%~15%, θ is 10%~30%, and the first solvent is cyclohexane;

[0146] (2) The first mixed solution is coated on the front side of the battery body (HBC battery), and the first annealing is performed to prepare the first light conversion sublayer. The temperature of the first annealing is 30℃~50℃, the time is 30 min~100 min, and the thickness is 200 nm~500 nm.

[0147] (3) The organic singlet exciton cleavage molecule and the inorganic quantum dot (lead sulfide) are ligand exchanged to form a second mixed solution; the organic singlet exciton cleavage molecule is perylene diimide, the inorganic quantum dot is lead sulfide, and the concentration of inorganic quantum dots in the second mixed solution is 15 mg / mL~35 mg / mL.

[0148] (4) In a nitrogen glove box, the second mixed solution is coated on the first light conversion layer and then annealed. The temperature of the second annealing is 100℃~150℃ and the time is 15 min~30 min. The thickness of the second light conversion layer is 200 nm~500 nm.

[0149] (5) The back contact battery body is assembled in sequence according to the glass layer, back contact battery, light conversion layer and glass layer to obtain the back contact battery body.

[0150] (6) Prepare a SiOx / SiNx / SiOx / SiNx / SiOx / SiNx / SiOx / SiNx / SiOx / SiNx Bragg reflective layer on the micro-textured rough surface of the bottom glass;

[0151] (7) Long-afterglow materials were respectively incorporated into polymer resins and pressed to prepare a first optical storage sublayer A, a first optical storage sublayer B, a second optical storage sublayer A, and a second optical storage sublayer B on the Bragg reflector layer. The doping amount was 10 wt%, and the thickness of each layer was 200 μm to 500 μm. The first optical storage sublayer A was an infrared long-afterglow material Zn3Ga2Ge2O 10 :Cr 3+ The first optical storage sublayer B is an infrared long-afterglow upconversion material Zr3Ga2GeO8:Cr.3+ ,Yb 3+ Er 3+ The second optical storage sublayer A is a long afterglow material in the ultraviolet-visible region, Ca3SnSi2O9:Sm 3+ The second optical storage sublayer B is a UV-Vis long afterglow downconversion material consisting of 20%~40% GeO2, 20%~40% Q2O3, 10%~49% ZnO, 5%~20% La2O3, 5%~20% Li2O, 0.1%~2% MnO, and 0.1%~3% Yb2O3.

[0152] (8) Cover the front glass layer on the second optical storage sublayer B to prepare an optical storage layer;

[0153] (9) A photovoltaic module is made by connecting the light storage layer to the back contact battery body using a hinge structure.

[0154] Example 2

[0155] This is basically the same as Example 1, except that step (7) is replaced as follows:

[0156] (7) Long-afterglow materials were respectively incorporated into polymer resins and pressed to prepare the first optical storage sublayer A and the second optical storage sublayer A on the Bragg reflector layer. The doping amount was 10 wt%, and the thickness of each layer was 200 μm~500 μm. The first optical storage sublayer A was an infrared long-afterglow material Zn3Ga2Ge2O 10 :Cr 3+ The second optical storage sublayer A is a long afterglow material in the ultraviolet-visible region, Ca3SnSi2O9:Sm 3+ .

[0157] Example 3

[0158] The process is basically the same as in Example 1, except that step (6) is omitted, and a first optical storage sublayer A, a first optical storage sublayer B, a second optical storage sublayer A, and a second optical storage sublayer B are prepared on the bottom glass.

[0159] Example 4

[0160] The process is basically the same as in Example 1, except that in step (6), a SiOx / SiNx / SiOx / SiNx / SiOx / SiNx / SiOx / SiNx / SiOx / SiNx Bragg reflective layer is prepared on a surface of ordinary transparent glass (without micro-texturation).

[0161] Comparative Example 1

[0162] (1) Prepare a mixed solution by mixing the photo-upconversion material and the solvent; the concentration of the photo-upconversion material in the mixed solution is 20 mg / mL to 40 mg / mL, and the photo-upconversion material is CaF2:Er 3+ The solvent is cyclohexane;

[0163] (2) The mixed solution was coated onto the front side of the battery body (HBC battery), annealed, and a light conversion layer was prepared. The annealing temperature was 30℃~50℃, the time was 30 min~100 min, and the thickness was 200 nm~500 nm.

[0164] (3) Long afterglow material Zn3Ga2Ge2O 10 :Cr 3+ The doping amount is 10 wt%~30 wt%, and the thickness is 200μm~500μm. The optical storage layer is prepared on the optical conversion layer by doping with polymer resin and pressing.

[0165] (4) The photovoltaic module is assembled in sequence according to the glass layer, back contact cell, light conversion layer, light storage layer and glass layer to obtain the photovoltaic module.

[0166] The photovoltaic modules prepared in each embodiment and comparative example were tested under an A-class solar simulator (ABET Sun 2000), calibrated using a reference silicon cell (RERA Solutions RR-1002), with a Keithley 2400 as the source meter, and IV curve measurements were performed from +1.5 V to -1.5 V in an unsealed environment. The light storage layer of the photovoltaic module was opened via a hinge structure, without covering the back contact cell body. After 12 hours of illumination, it was transferred to dark conditions, and the light storage layer was closed via the hinge structure to cover the light conversion layer of the back contact cell body. The test was then performed. SC V OC The results of FF and PCE are shown in Table 1.

[0167] Table 1

[0168]

[0169] As can be seen from Table 1, compared with Comparative Example 1, the photovoltaic modules prepared in the examples have higher energy storage capacity under high light intensity and higher energy release efficiency in the dark, effectively extending the daily effective power generation time.

[0170] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0171] The embodiments described above are merely illustrative of several implementation methods of this application, intended to facilitate a detailed understanding of the technical solutions of this application, but should not be construed as limiting the scope of protection of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the scope of protection of this application. It should be understood that technical solutions obtained by those skilled in the art based on the technical solutions provided in this application through logical analysis, reasoning, or limited experimentation are all within the scope of protection of the appended claims. Therefore, the scope of protection of this patent application should be determined by the content of the appended claims, and the specification can be used to interpret the content of the claims.

Claims

1. A photovoltaic module, characterized in that, The device includes a back contact battery body and a light storage layer. The back contact battery body includes a back contact battery and a light conversion layer. The light conversion layer is disposed on the light-receiving surface of the back contact battery. The light storage layer is connected to the back contact battery body via a hinge structure. The light storage layer can be closed by the hinge structure to at least partially cover the light conversion layer. The light storage layer includes a first light storage sublayer and a second light storage sublayer stacked sequentially. One of the first light storage sublayer and the second light storage sublayer includes an infrared long-afterglow material, and the other of the first light storage sublayer and the second light storage sublayer includes an ultraviolet-visible long-afterglow material.

2. The photovoltaic module as described in claim 1, characterized in that, The first optical storage sublayer includes a first optical storage sublayer A and a first optical storage sublayer B, and the second optical storage sublayer includes a second optical storage sublayer A and a second optical storage sublayer B. The first optical storage sublayer A, the first optical storage sublayer B, the second optical storage sublayer A, and the second optical storage sublayer B are stacked sequentially. The first optical storage sublayer A and the first optical storage sublayer B both include infrared long-afterglow material, and the second optical storage sublayer A and the second optical storage sublayer B both include ultraviolet-visible long-afterglow material.

3. The photovoltaic module as described in claim 2, characterized in that, The photovoltaic module satisfies at least one of the following characteristics: (1) The first optical storage sublayer A includes Zn3Ga2Ge2O 10 :Cr 3+ and Ca2SnO4:Tm 3+ &Ho 3+ At least one of them; (2) The first optical storage sublayer B comprises Zr3Ga2GeO8:Cr 3+ ,Yb 3+ Er 3+ and Zn3Ga 1.99-y-z Ge2O 10 1Cr 3+ ,yYb 3+ ,zEr 3+ At least one of them, wherein 0 <y<1,0<z<1; (3) The second optical storage sublayer A includes Ca3SnSi2O9:Sm 3+ and CaMgSi2O6:Dy 3+ At least one of them; (4) The second optical storage sublayer B includes αGeO2:βQ2O3:γZnO:δLa2O3:εLi2O:σMnO: ωYb2O3, Wherein, Q is selected from at least one of B and Ga, expressed as a percentage in molar ratios. α:β:γ:δ:ε:σ:ω=20%~40%:20%~40%:10%~49%:5%~20%:5%~20%:0.1%~2%:0.1%~3%.

4. The photovoltaic module as described in claim 1, characterized in that, The first optical storage sublayer and the second optical storage sublayer each independently comprise a polymer resin, and the infrared long-afterglow material or the ultraviolet-visible long-afterglow material is doped into the polymer resin.

5. The photovoltaic module as described in claim 4, characterized in that, The photovoltaic module satisfies at least one of the following characteristics: (1) The doping amount of the infrared long afterglow material or the ultraviolet-visible long afterglow material is independently 10 wt% to 30 wt%; (2) The polymeric resin includes at least one of ethylene-α-olefin copolymer, ethylene-acrylic acid copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl methacrylate copolymer, ethyl-methacrylate copolymer, ethylene-butyl acrylate copolymer, polyvinyl butyral and ethylene-vinyl acetate copolymer.

6. The photovoltaic module as described in claim 1, characterized in that, The optical storage layer further includes a first glass layer, a second glass layer, and a reflective layer, wherein the first glass layer, the reflective layer, the first optical storage sublayer, the second optical storage sublayer, and the second glass layer are stacked sequentially.

7. The photovoltaic module as described in claim 6, characterized in that, The reflective layer comprises alternating layers of high-refractive-index material and low-refractive-index material. The high-refractive-index material layer comprises at least one of silicon nitride, titanium oxide, and silicon carbide, and the low-refractive-index material layer comprises at least one of silicon oxide, magnesium fluoride, and aluminum oxide.

8. The photovoltaic module as described in claim 6, characterized in that, The surface of the first glass layer near the reflective layer has a textured surface.

9. The photovoltaic module according to any one of claims 1 to 8, characterized in that, The light conversion layer includes a first light conversion sublayer and a second light conversion sublayer stacked together. The second light conversion sublayer is disposed on the side of the first light conversion sublayer away from the back contact battery. One of the first light conversion sublayer and the second light conversion sublayer includes a light up-conversion material, and the other of the first light conversion sublayer and the second light conversion sublayer includes a light down-conversion material.

10. The photovoltaic module as described in claim 9, characterized in that, The first light conversion sublayer includes a light upconversion material, and the second light conversion sublayer includes a light downconversion material.

11. The photovoltaic module as described in claim 9, characterized in that, The photovoltaic module satisfies at least one of the following characteristics: (1) The optical upconversion material includes a first rare earth ion pair doped nanomaterial, wherein the first rare earth ion pair in the first rare earth ion pair doped nanomaterial includes λLn 3+ / θYb 3+ Wherein, Ln is selected from at least one of Ho, Er, Ce and Tm, Ln1 3+ The molar doping amount λ is 5%~15%, Yb 3+ The molar doping amount θ is 10%~30%; (2) The photo-down-conversion material includes at least one of a second rare-earth ion pair doped nanomaterial and an organic singlet exciton cleavage molecule doped infinite quantum dot material, wherein the second rare-earth ion pair in the second rare-earth ion pair doped nanomaterial includes ηLn2. 3+ / ρYb 3+ Ln2 is selected from at least one of Gd, Pr, Ho, Er, Nd, Ce, Tb, Dy, and Tm. 3+ The molar doping amount η is 10%~30%, Yb 3+ The doping molar amount ρ is 2%~10%, and the organic singlet exciton cleavage molecules in the organic singlet exciton cleavage molecule-doped infinite quantum dot material include at least one of perylene diimide, trinaphthalene diphenylimide, pyrrolopyrrole dione, perylene and rubrene. The infinite quantum dots in the organic singlet exciton cleavage molecule-doped infinite quantum dot material include at least one of lead sulfide and lead selenide.

12. The photovoltaic module according to any one of claims 1-8 and 10-11, characterized in that, The photovoltaic module also includes a first aluminum frame and a second aluminum frame. The first aluminum frame is disposed around the back contact cell body, and the second aluminum frame is disposed around the light storage layer. The hinge structure includes a connecting shaft, and the first aluminum frame and the second aluminum frame are connected through the connecting shaft. The light storage layer can rotate around the connecting shaft.

13. The photovoltaic module as described in claim 12, characterized in that, The back contact battery body is connected to a first bracket, the optical storage layer is connected to a second bracket, and the hinge structure is connected to a third bracket. The first bracket, the second bracket, and the third bracket are used to support the back contact battery body, the optical storage layer, and the hinge structure on the ground, respectively.

14. The photovoltaic module as described in claim 13, characterized in that, The photovoltaic module satisfies at least one of the following characteristics: (1) The second bracket is a telescopic bracket; (2) The materials of the connecting shaft, the first bracket, the second bracket and the third bracket are each independently selected from at least one of aluminum alloy, stainless steel and stainless copper.

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