Perovskite precursor solution, solar cell and preparation method thereof

Abstract

The invention provides a perovskite precursor solution, a solar cell and a preparation method thereof. The perovskite precursor solution comprises a perovskite material, a stabilizer and an organic solvent; the stabilizer comprises a first organic molecule as shown in a formula (1) and / or a second organic molecule as shown in a formula (2). Molecules of the stabilizer provided by the invention contain carbonyl, aryl and conjugated structures, the carbonyl passivates Pb < 2 + > defects, the conjugated structures delocalize pi electrons to capture and dissipate free radicals, the aryl absorbs ultraviolet light to inhibit photolysis, electron-withdrawing and electron-donating groups form a D-pi-A system through a conjugated bridge, intramolecular charge transfer is enhanced, and the stability of the stabilizer is improved. The free radical scavenging and atomic oxygen resisting capabilities are synergistically enhanced, and comprehensive protection is provided for the application of the perovskite solar cell in outer space.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic materials technology, and in particular to a perovskite precursor solution, a solar cell, and a method for preparing the same. Background Technology

[0002] Perovskite solar cells combine high power-to-mass ratio, broad spectral response, and low-cost potential, making them a core candidate for next-generation space power systems. However, the complex and harsh environment of outer space also presents significant challenges to perovskite solar cells: high-energy particle radiation generates numerous defects and free radicals in the perovskite lattice, inducing nonradiative recombination and accelerating structural distortion; ultraviolet irradiation energy exceeds the perovskite bandgap, easily leading to photolysis, phase separation, and performance degradation of organic / inorganic components; atomic oxygen erosion, through high-energy oxidation reactions with organic functional groups, disrupts the molecular framework and introduces defects on the cell surface. Furthermore, insufficiently coordinated Pb in the perovskite thin film... 2+ Defects not only cause nonradiative recombination and open-circuit voltage loss, but also act as active sites to further exacerbate the damage of the aforementioned environmental factors to the device, thereby leading to a rapid decline in the overall performance of the battery.

[0003] Therefore, how to reduce Pb in the perovskite light-absorbing layer 2+ Improving the resistance to defects and enhancing the antioxidant and UV protection capabilities of solar cells to provide comprehensive and effective protection in the complex environment of outer space has become an urgent problem to be solved. Summary of the Invention

[0004] To address the aforementioned technical problems, the present invention aims to provide a perovskite precursor solution, a solar cell, and a method for preparing the same. The perovskite precursor solution provided by the present invention incorporates a stabilizer with a specific molecular structure. The carbonyl group in the stabilizer coordinatingly passivates Pb. 2+ Despite its defects, the conjugated structure (-CO-CH2-CO-, -CO-CH=CH-) can capture high-energy particles to excite free radicals and work with aryl groups to resist atomic oxygen erosion. The aryl groups can also absorb and dissipate ultraviolet energy. The various functional groups in the organic molecule work together to achieve comprehensive protection for solar cells in the complex environment of outer space.

[0005] To achieve this objective, the present invention adopts the following technical solution:

[0006] In a first aspect, the present invention provides a perovskite precursor solution, the perovskite precursor solution comprising a perovskite material, a stabilizer, and an organic solvent; the stabilizer comprising a first organic molecule and / or a second organic molecule;

[0007] The chemical structural formula of the first organic molecule is shown in formula (1) below:

[0008]

[0009] Ar1 and Ar2 are each independently selected from either substituted aryl or unsubstituted aryl groups;

[0010] The chemical structural formula of the second organic molecule is shown in formula (2) below:

[0011]

[0012] Ar3 and Ar4 are each independently selected from either substituted aryl or unsubstituted aryl groups.

[0013] The stabilizer molecule described in this invention contains a carbonyl group (C=O), an aryl group, and a conjugated structure (-CO-CH2-CO-, -CO-CH=CH-), which can simultaneously achieve functions such as defect passivation, free radical scavenging, and UV anti-oxidation, making it particularly suitable for the complex environment of outer space.

[0014] Among them, the carbonyl group can react with Pb 2+ Coordination reduces defects and nonradiative recombination; conjugated π electrons capture oxygen free radicals, organic free radicals, and halogen free radicals excited by high-energy particles such as protons, electrons, and ultraviolet photons, and reduce their activity through electron transfer or energy dissipation; aryl groups absorb ultraviolet energy, delaying photolysis and aging; electron-withdrawing and electron-donating groups form a D-π-A system through conjugated bridges, enhancing intramolecular charge transfer and synergistically enhancing free radical scavenging ability and antiproton oxygen erosion performance.

[0015] Through the synergistic effect of the aforementioned functional groups, this invention effectively solves the problem of perovskite solar cells being susceptible to defects, radiation, ultraviolet radiation, and atomic oxygen corrosion in outer space by introducing stabilizer molecules into the perovskite precursor solution that can passivate defects, capture free radicals, and absorb and dissipate ultraviolet light. This achieves comprehensive protection and stability enhancement for the device, significantly improving the long-term stability and reliability of the solar cell.

[0016] Preferably, in the first organic molecule, Ar1 and Ar2 are each independently selected from any one of phenyl, naphthyl, alkoxyphenyl, or haloaryl groups.

[0017] In this invention, "alkoxyphenyl" refers to an alkoxy group that substitutes for a hydrogen atom in a benzene ring. The number of carbon atoms in the alkoxy group can be selected from 1 to 6, for example, 1, 2, 3, 4, 5 or 6.

[0018] In this invention, the introduction of alkoxy substitution into the aryl group can enhance the π-π stacking between molecules, and the rigid framework of phenyl and naphthyl groups can form a three-dimensional shielding layer, thereby effectively increasing the stability of the perovskite light-absorbing layer.

[0019] Preferably, the first organic molecule includes (2,2'-Dimethoxydibenzoylmethane).

[0020] The first organic molecule in this invention contains a β-diketone structure, which can be deprotonated in an enol form under appropriate pH or solvent conditions to form a bidentate ligand, which then coordinates with an unsaturated Pb. 2+ The formation of a stable six-membered ring effectively passivates Pb in the perovskite layer. 2+ Defects are identified and a protective layer is constructed at the interface to improve device stability and suppress defects in solar cells. The conjugated structure of the β-diketone in a specific first organic molecule can also provide π electrons, which can capture active free radicals generated by high-energy particle excitation and resist the effects of high-energy particle irradiation on battery performance.

[0021] This molecule also possesses certain antioxidant capabilities, derived from the stabilizing effect of the aromatic ring on free radicals and the ability of the β-diketone structure to participate in free radical reactions under specific conditions. Although no strong antioxidant groups are introduced, the ability of the perovskite layer to resist antigenic oxygen erosion can be indirectly enhanced by reducing defect-induced reactive oxygen species generation.

[0022] Furthermore, the aromatic rings in the molecular structure possess excellent ultraviolet absorption properties, dissipating high-energy ultraviolet light through intramolecular vibrations or intersystem crossings, thus preventing ultraviolet energy from being transferred to the perovskite layer and causing photolysis and aging. This characteristic helps improve the operational stability of perovskite-silicon tandem solar cells under extreme environments.

[0023] Preferably, in the second organic molecule, Ar3 and Ar4 are each independently selected from either a substituted aryl group containing an electron-withdrawing group or a substituted aryl group containing an electron-donating group.

[0024] The present invention introduces electron-withdrawing groups into organic molecules containing -C=CC=O functional groups, which can effectively reduce the LUMO energy level of the conjugated system, enhance the capture of free radicals and the affinity for oxide species, and inhibit the deep erosion of the battery structure by atomic oxygen. Introducing electron-donating groups can raise the HOMO energy level of the conjugated system, enhance the electron supply capability, and through the synergy between electron-donating and electron-donating groups, can strengthen the intramolecular charge transfer (ICT) effect of solar cells, quench reactive oxygen free radicals, and thus effectively inhibit the depth of atomic oxygen erosion. By forming a D-π-A (Donor-π-Acceptor) structure through the -C=CC=O functional group and its connection to aryl groups containing electron-withdrawing and electron-donating groups, the ICT effect is enhanced, resulting in a redshift of the ultraviolet absorption edge, covering the main loss band of space ultraviolet light, and broadening the ultraviolet absorption wavelength. Simultaneously, it can eliminate the influence of free radicals on the perovskite lattice, improving the battery's ability to resist atomic oxygen erosion.

[0025] Preferably, the Ar3 comprises a substituted aryl group containing at least one electron-withdrawing group.

[0026] Preferably, the electron-withdrawing group includes any one or a combination of at least two of the following: a nitro group, a cyano group, or a trifluoromethyl group.

[0027] Preferably, the Ar4 comprises a substituted aryl group containing at least one electron-donating group.

[0028] Preferably, the electron-donating group includes any one or a combination of at least two of methoxy, dimethylamino, or hydroxyl groups.

[0029] Preferably, the second organic molecule includes (4-Nitrochalcone-4'-Dimethylamino).

[0030] The core of the second organic molecule in this invention is a chalcone structure, whose carbonyl oxygen can act as a Lewis base, coordinating with the unsaturated Pb in the perovskite layer. 2+ Coordinate bonds are formed, effectively passivating defects. Substituents on the aromatic ring regulate the electron density of the carbonyl oxygen: electron-donating groups enhance coordination ability, while electron-withdrawing groups have the opposite effect. The entire conjugated system can also stabilize Pb through weak interactions. 2+ .

[0031] The conjugated structure (-CO-CH=CH-) in the chalcone molecular skeleton has a delocalized π-electron system, which can capture free radicals generated by high-energy particle excitation, reduce the damage of free radicals to the crystal lattice, and resist the influence of high-energy particle irradiation on battery performance.

[0032] Chalcone molecules possess excellent antioxidant properties, which can be attributed to: (1) the conjugated structure of α,β-unsaturated ketones helps stabilize free radical intermediates; (2) specific substituents (such as hydroxyl and amino groups) can scavenge free radicals; and (3) by regulating the substituents to achieve suitable redox potentials, the stability of the molecule itself can be enhanced, or it can act as a sacrificial agent to scavenge reactive oxygen species.

[0033] In terms of UV protection, chalcone molecules are inherently strong chromophores, and the two aromatic rings expand the π-conjugated system, enhancing UV absorption intensity and red-shifting the absorption band. Introducing auxochromic / chromophore groups (such as -OH, -OCH3, -NO2) can modulate its absorption spectrum, achieving shielding against specific UV bands. The absorbed UV energy is dissipated through nonradiative transitions or reversible photochemical processes, reducing the risk of energy transfer and photodegradation to the perovskite layer.

[0034] Therefore, the introduction of this molecule helps to improve the stability and environmental stress resistance of solar cells, especially the device reliability when operating in environments with high-energy particle irradiation, strong ultraviolet radiation, or abundant oxygen.

[0035] Preferably, the concentration of the stabilizer in the perovskite precursor solution is 0.05-0.5 mg / mL, such as 0.05 mg / mL, 0.10 mg / mL, 0.15 mg / mL, 0.20 mg / mL, 0.25 mg / mL, 0.30 mg / mL, 0.35 mg / mL, 0.40 mg / mL, 0.45 mg / mL, or 0.50 mg / mL.

[0036] Preferably, in the perovskite precursor solution, the mass ratio of the stabilizer to the perovskite material should satisfy the condition that the mass ratio of the stabilizer to the perovskite material in the formed perovskite light-absorbing layer is x:y, where x+y=100, 0.1≤x≤5. For example, x:y can be 0.1:99.9, 0.3:99.7, 0.5:99.5, 1.0:99.0, 1.5:98.5, 2.0:98.0, 2.5:97.5, 3.0:97.0, 3.5:96.5, 4.0:96.0, 4.5:95.5, or 5.0:95.0, etc.

[0037] Preferably, the perovskite material in the perovskite precursor solution is an ABX3 type perovskite material, wherein A includes methylammonium cations (MA). + ), formamidinium cation (FA) + ), Cs + K + or Rb + B includes any one or at least two of the following, where B includes Pb. 2+ X includes halide anions.

[0038] Preferably, the halide anion includes Cl. - ,Br - Or any one or at least two of I-.

[0039] Preferably, the organic solvent includes any one or a combination of at least two of dimethyl sulfoxide (DMSO), chlorobenzene, toluene, dimethoxyethane, acetonitrile, N,N-dimethylformamide (DMF), or N-methylpyrrolidone.

[0040] In a second aspect, the present invention provides a method for preparing a perovskite precursor solution according to the first aspect, the preparation method comprising the following steps:

[0041] The perovskite material, stabilizer, and organic solvent are mixed to obtain the perovskite precursor solution.

[0042] The stabilizer comprises a first organic molecule and / or a second organic molecule;

[0043] The chemical structural formula of the first organic molecule is shown in formula (1) below:

[0044]

[0045] Ar1 and Ar2 are each independently selected from either substituted aryl or unsubstituted aryl groups;

[0046] The chemical structural formula of the second organic molecule is shown in formula (2) below:

[0047]

[0048] Ar3 and Ar4 are each independently selected from either substituted aryl or unsubstituted aryl groups.

[0049] The perovskite precursor solution provided by this invention is prepared by directly mixing a stabilizer with perovskite material and an organic solvent. The preparation process is simple and inexpensive. The stabilizer, which contains a specific organic molecular structure, can effectively improve the all-round protection of the battery in complex space environments.

[0050] Preferably, the preparation of the first organic molecule includes: performing a Claisen condensation reaction between a carbonyl compound and an ester compound under the catalysis of a first catalyst; the carbonyl compound includes a carbonyl group and Ar1, where Ar1 includes any one of substituted aryl or unsubstituted aryl groups; the ester compound includes an ester group and Ar2, where Ar2 includes any one of substituted aryl or unsubstituted aryl groups.

[0051] Preferably, the first catalyst comprises NaH.

[0052] Preferably, the first organic molecule includes The preparation method includes: carrying out a Claisen condensation reaction of 2-methoxyacetophenone and methyl 2-methoxybenzoate under a first catalyst.

[0053] In this invention, the reaction equation for the Claisen condensation reaction of the specific first organic molecule is as follows:

[0054] Preferably, the preparation of the second organic molecule includes: carrying out a Claisen-Schmidt condensation reaction between an aldehyde compound and a ketone compound under the catalysis of a second catalyst; the aldehyde compound includes an aldehyde group and Ar3, wherein Ar3 includes any one of substituted aryl or unsubstituted aryl groups; the ketone compound includes a carbonyl group and Ar4, wherein Ar4 includes any one of substituted aryl or unsubstituted aryl groups.

[0055] Preferably, the second catalyst comprises NaOH.

[0056] Preferably, the Ar3 comprises a substituted aryl group containing at least one electron-withdrawing group, and the Ar4 comprises a substituted aryl group containing at least one electron-donating group.

[0057] Preferably, the second organic molecule includes The preparation method includes: carrying out a Claisen-Schmidt condensation reaction of p-nitrobenzaldehyde and methyl 2-methoxybenzoate under a second catalyst.

[0058] In this invention, the reaction equation for the Claisen-Schmidt condensation reaction of the specific second organic molecule is as follows:

[0059] Thirdly, the present invention provides a solar cell comprising a substrate layer, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and a top electrode layer stacked sequentially; the perovskite light-absorbing layer is prepared using a perovskite precursor solution as described in the first aspect, and the perovskite light-absorbing layer comprises a perovskite material and a stabilizer.

[0060] The solar cell provided by this invention introduces a specific stabilizer into the perovskite light-absorbing layer. The stabilizer is composed of a first and / or a second organic molecule with a specific chemical structure. The molecule contains a carbonyl group (C=O), an aryl group, and a conjugated structure (-CO-CH2-CO-, -CO-CH=CH-). It can simultaneously achieve functions such as defect passivation, free radical scavenging, and anti-ultraviolet oxidation, making it particularly suitable for the complex environment of outer space.

[0061] Among them, the carbonyl group can react with Pb 2+ Coordination reduces defects and nonradiative recombination; conjugated π electrons capture oxygen free radicals, organic free radicals, and halogen free radicals excited by high-energy particles such as protons, electrons, and ultraviolet photons, and reduce their activity through electron transfer or energy dissipation; aryl groups absorb ultraviolet energy, delaying photolysis and aging; electron-withdrawing and electron-donating groups form a D-π-A system through conjugated bridges, enhancing intramolecular charge transfer and further improving antigen oxygenation capacity.

[0062] Through the synergistic effect of the aforementioned functional groups, the stabilizer of this invention effectively solves the problem that perovskite solar cells are susceptible to defects, radiation, ultraviolet radiation, and atomic oxygen corrosion in the outer space environment, achieving comprehensive protection and stability improvement for the device.

[0063] Preferably, in the perovskite light-absorbing layer, the ratio of the total mass of the stabilizer to the mass of the perovskite material is x:y, where x+y=100, 0.1≤x≤5, for example, x:y can be 0.1:99.9, 0.3:99.7, 0.5:99.5, 1.0:99.0, 1.5:98.5, 2.0:98.0, 2.5:97.5, 3.0:97.0, 3.5:96.5, 4.0:96.0, 4.5:95.5, or 5.0:95.0, etc.

[0064] Preferably, the perovskite light-absorbing layer includes a first sublayer, which includes the perovskite material and a stabilizer filled in the perovskite material.

[0065] Preferably, the perovskite light-absorbing layer further includes a second sublayer, which covers the surface of the first sublayer and is disposed close to the electron transport layer, and the second sublayer includes a stabilizer.

[0066] In the perovskite light-absorbing layer of the present invention, the stabilizer can be either filled inside the perovskite material or distributed on the surface of the first sublayer. Its formation mechanism is as follows: the hydrophobic aryl groups in the precursor solution generate a repulsive effect, while the carbonyl groups undergo π-π stacking adsorption with the fullerene in the electron transport layer, thereby spontaneously forming a stabilizer layer on the side near the electron transport layer.

[0067] Preferably, in the perovskite light-absorbing layer, the thickness of the second sublayer is 1-10 nm, such as 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm or 10 nm.

[0068] Preferably, the total thickness of the perovskite light-absorbing layer is 300-1200nm, such as 300nm, 350nm, 450nm, 550nm, 650nm, 750nm, 850nm, 950nm, 1050nm or 1200nm.

[0069] Preferably, the hole transport layer comprises a NiO layer and a SAM layer stacked sequentially.

[0070] Preferably, the material of the SAM layer includes any one or a combination of at least two of the following: 2PACz ((2-(9H-carbazole-9-yl)ethyl)phosphonic acid), 4PACz ((4-(9H-carbazole-9-yl)butyl)phosphonic acid), MeO-2PACz ([2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid), or Me-4PACz ([4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid).

[0071] Preferably, the thickness of the NiO layer is 10-25nm, such as 10nm, 12nm, 14nm, 16nm, 18nm, 20nm, 22nm, 24nm or 25nm.

[0072] Preferably, the thickness of the SAM layer is 1-5nm, such as 1nm, 2nm, 3nm, 4nm or 5nm.

[0073] Preferably, a buffer layer is further provided between the electron transport layer and the top electrode layer.

[0074] Preferably, the electron transport layer is made of fullerene.

[0075] Preferably, the fullerene comprises C 60 .

[0076] Preferably, the thickness of the electron transport layer is 10-20 nm, such as 10 nm, 12 nm, 14 nm, 16 nm, 18 nm or 20 nm.

[0077] Preferably, the material of the buffer layer includes tin oxide.

[0078] Preferably, the thickness of the buffer layer is 5-15nm, such as 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm or 15nm.

[0079] Preferably, in the top electrode layer, a transparent conductive layer is further disposed between the electron transport layer and the top electrode layer, and the transparent conductive layer is disposed close to the top electrode layer.

[0080] Preferably, the transparent conductive layer disposed near the top electrode layer is made of indium oxide (ITO).

[0081] Preferably, the thickness of the transparent conductive layer disposed near the top electrode layer is 40-60nm, such as 40nm, 42nm, 44nm, 46nm, 48nm, 50nm, 52nm, 54nm, 56nm, 58nm or 60nm.

[0082] Preferably, the material of the top electrode layer includes silver.

[0083] Preferably, the thickness of the top electrode layer is 150-250 nm, such as 150 nm, 200 nm or 250 nm.

[0084] Preferably, an encapsulation layer is further provided on the surface of the top electrode layer away from the electron transport layer.

[0085] Preferably, the solar cell includes either a perovskite solar cell or a perovskite-silicon tandem solar cell.

[0086] Preferably, the perovskite solar cell includes either a single-junction perovskite solar cell or a multi-junction perovskite solar cell.

[0087] Preferably, when the solar cell is a single-junction perovskite solar cell, the substrate layer includes a transparent conductive layer and a glass layer stacked sequentially away from the hole transport layer.

[0088] Preferably, when the solar cell is a multi-junction perovskite solar cell, the substrate layer includes an intermediate connecting layer (tunnel junction) and a perovskite bottom cell layer stacked sequentially along the distance from the hole transport layer.

[0089] In this invention, if the solar cell is a multi-junction perovskite solar cell, the structure of the perovskite bottom cell layer can be selected to be the same as or different from the structure of the top cell layer disposed on the other side of the intermediate connecting layer. This invention does not impose specific limitations on the structure and composition of the perovskite bottom cell layer, and those skilled in the art can make selections as needed.

[0090] Preferably, when the solar cell is a perovskite crystalline silicon tandem solar cell, the substrate layer includes an intermediate connecting layer and a crystalline silicon bottom cell layer stacked sequentially along the path away from the hole transport layer.

[0091] In this invention, when the solar cell is a perovskite crystalline silicon tandem solar cell, the structure and composition of the crystalline silicon bottom cell layer are not specifically limited. Those skilled in the art can select a suitable structure and composition of the crystalline silicon bottom cell layer as needed.

[0092] By way of example and not limitation, the crystalline silicon bottom cell layer includes a bottom electrode layer, a transparent conductive layer, a P-type doped layer, a first intrinsic layer, a silicon substrate layer, a second intrinsic layer, and an N-type doped layer stacked sequentially, with the N-type doped layer disposed close to the intermediate interconnect layer.

[0093] The bottom electrode layer has a thickness of 100-500 nm, such as 100 nm, 200 nm, 300 nm, 400 nm, or 500 nm; the transparent conductive layer comprises any one or at least two of the following: indium tin oxide layer, indium zinc oxide layer, zinc aluminum oxide layer, tungsten-doped indium oxide layer, or cerium-doped indium oxide layer, with a thickness of 10-500 nm; the P-type doped layer comprises a P-type amorphous silicon doped layer and / or a P-type microcrystalline silicon doped layer, with a thickness of 1-50 nm. The first intrinsic layer includes an i-type hydrogenated amorphous silicon layer with a thickness of 5-50 nm; the silicon substrate layer has a thickness of 155-175 μm, such as 155 μm, 156 μm, 158 μm, 160 μm, 162 μm, 164 μm or 165 μm, etc.; the second intrinsic layer includes an i-type hydrogenated amorphous silicon layer with a thickness of 5-50 nm; the N-type doped layer includes an N-type amorphous silicon doped layer and / or an N-type microcrystalline silicon doped layer with a thickness of 1-50 nm.

[0094] Preferably, the intermediate connecting layer is made of a transparent conductive oxide.

[0095] Preferably, the transparent conductive oxide comprises any one or a combination of at least two of indium tin oxide, fluorine-doped tin oxide, or aluminum-doped zinc oxide, and has a thickness of 10-20 nm.

[0096] Fourthly, the present invention provides a method for preparing a solar cell according to the third aspect, the method comprising:

[0097] (1) A hole transport layer is formed on the surface of the basal layer;

[0098] (2) The perovskite precursor solution as described in the first aspect is placed on the surface of the hole transport layer on the side away from the substrate layer to form a perovskite light-absorbing layer, the perovskite light-absorbing layer comprising a perovskite material and a stabilizer.

[0099] (3) An electron transport layer and a top electrode layer are sequentially disposed on the surface of the perovskite light-absorbing layer away from the hole transport layer to obtain the solar cell.

[0100] In the solar cell fabrication process provided by this invention, a perovskite precursor solution containing a stabilizer is placed in the hole transport layer to prepare the perovskite light-absorbing layer. The introduction of a specific stabilizer can reduce the Pb of the perovskite light-absorbing layer. 2+ This addresses defects while simultaneously improving the perovskite light-absorbing layer's resistance to high-energy particle irradiation, antigenic oxygen erosion, and ultraviolet radiation, thereby achieving comprehensive and effective protection for tandem solar cells in the complex space environment. Specifically, the carbonyl groups in the stabilizer coordinatingly passivate Pb. 2+Despite its defects, the conjugated structure (-CO-CH2-CO-, -CO-CH=CH-) can capture high-energy particles to excite free radicals and work with aryl groups to resist atomic oxygen erosion. The aryl groups can also absorb and dissipate ultraviolet energy. The various functional groups in the organic molecule work together to achieve comprehensive protection for solar cells in the complex environment of outer space.

[0101] The solar cell manufacturing process used in this invention is simple, low-cost, and suitable for industrial production.

[0102] Preferably, the method of placing the perovskite precursor solution on the surface of the hole transport layer includes: coating the perovskite precursor solution on the surface of the hole transport layer, and obtaining the perovskite light-absorbing layer after annealing.

[0103] Preferably, the annealing temperature is 90-110℃, such as 90℃, 95℃, 100℃, 105℃, or 110℃.

[0104] Preferably, the annealing time is 5-20 minutes, such as 5 minutes, 10 minutes, 15 minutes or 20 minutes.

[0105] Preferably, the coating method includes any one of slot coating, solution spin coating, or inkjet printing.

[0106] Preferably, the hole transport layer and the electron transport layer are each prepared independently by any one of the following methods: solution spin coating, doctor blade coating, slot coating, thermal evaporation, inkjet printing, chemical vapor deposition, magnetron sputtering, or atomic layer deposition.

[0107] Preferably, before the top electrode layer is provided, a buffer layer is also provided on the surface of the electron transport layer on the side away from the perovskite light-absorbing layer.

[0108] Preferably, the buffer layer is configured using any one of the following methods: blade coating, slot coating, thermal evaporation, inkjet printing, chemical vapor deposition, magnetron sputtering, or atomic layer deposition.

[0109] Preferably, before setting the top electrode layer, a transparent conductive layer is also set on the surface of the buffer layer on the side away from the electron transport layer.

[0110] Preferably, the transparent conductive layer disposed between the buffer layer and the top electrode layer is disposed in any one of magnetron sputtering, atomic deposition, chemical vapor deposition or thermal evaporation.

[0111] Preferably, the top electrode layer is prepared by any one of thermal evaporation, magnetron sputtering, inkjet printing, chemical vapor deposition, or atomic deposition.

[0112] Preferably, the top electrode layer is further encapsulated with an encapsulation layer after it is formed.

[0113] Preferably, the solar cell includes either a perovskite solar cell or a perovskite-silicon tandem solar cell.

[0114] Preferably, the perovskite solar cell includes either a single-junction perovskite solar cell or a multi-junction perovskite solar cell.

[0115] Preferably, when the solar cell is a single-junction perovskite solar cell, the substrate layer includes a conductive glass layer, and the fabrication process of the conductive glass layer includes: setting a transparent conductive layer on the surface of the glass layer.

[0116] Preferably, when the solar cell is a multi-junction perovskite solar cell, the substrate layer includes an intermediate connecting layer and a perovskite bottom cell layer stacked sequentially away from the hole transport layer. The fabrication process of the substrate layer of the multi-junction perovskite solar cell includes: sequentially setting the perovskite bottom cell layer, and then setting the intermediate connecting layer on the perovskite bottom cell layer.

[0117] Preferably, when the solar cell is a perovskite crystalline silicon tandem solar cell, the substrate layer includes an intermediate connecting layer and a crystalline silicon bottom cell layer sequentially stacked along the path away from the hole transport layer.

[0118] In this invention, the fabrication process of the crystalline silicon bottom cell layer is not specifically limited. Those skilled in the art can select the fabrication process of the crystalline silicon bottom cell layer according to the appropriate structure and composition of the selected crystalline silicon bottom cell layer.

[0119] By way of example and not limitation, the fabrication process of the crystalline silicon bottom cell layer includes: sequentially forming a first intrinsic layer, a P-type doped layer, a transparent conductive layer and a bottom electrode layer on one side surface of the silicon substrate layer, and then sequentially forming a second intrinsic layer and an N-type doped layer on the opposite side surface of the silicon substrate layer.

[0120] The formation process of the first intrinsic layer and the P-type doped layer includes plasma-enhanced chemical vapor deposition; the formation process of the transparent conductive layer includes magnetron sputtering or vacuum evaporation; the formation process of the bottom electrode layer includes any one of magnetron sputtering, thermal evaporation, reactive plasma deposition, and printing; and the formation process of the second intrinsic layer and the N-type doped layer includes plasma-enhanced chemical vapor deposition.

[0121] Preferably, the process for forming the intermediate connecting layer includes any one of magnetron sputtering, vacuum evaporation, reactive plasma deposition, or chemical vapor deposition.

[0122] Compared with the prior art, the present invention has at least the following beneficial effects:

[0123] This invention provides a precursor solution stabilizer for use in solar cells, wherein the stabilizer introduces a first organic molecule and / or a second organic molecule having a specific chemical structure. These molecules all contain a carbonyl (C=O) group, an aryl group, and a conjugated structure (-CO-CH2-CO-, -CO-CH=CH-), thus exhibiting multiple stabilizing functions, making them particularly suitable for the operational requirements of spacecraft and satellites in the complex environment of outer space. Specifically, the lone pair electrons in the C=O group can interact with Pb in the perovskite precursor. 2+ Forming stable coordination bonds effectively passivates Pb 2+ Defects are addressed by suppressing nonradiative recombination processes, thereby improving the photoelectric conversion efficiency of the device. Simultaneously, the delocalized π-electron system contained in the conjugated structures (-CO-CH2-CO-, -CO-CH=CH-) in the molecular framework can capture free radicals generated by high-energy particle excitation, reducing the damage of free radicals to the crystal lattice. This, combined with the stabilizing effect of aryl groups on free radicals, synergizes with the stabilizing effect of aryl groups, thus jointly resisting performance degradation caused by outer space particle environments such as atomic oxygen erosion and high-energy particle irradiation. Furthermore, aryl groups introduced at specific positions in the organic molecule can significantly enhance the absorption and dissipation of ultraviolet light, preventing ultraviolet energy from being transferred to the perovskite lattice, delaying the photolysis and aging of the perovskite layer caused by ultraviolet irradiation, and further improving the photostability of the device during on-orbit operation. Attached Figure Description

[0124] Figure 1 This is a schematic diagram of the perovskite-silicon tandem solar cell provided in Examples 1 and 2.

[0125] In the figure, 1 is the bottom electrode layer; 2 is the first transparent conductive layer; 3 is the P-type doped layer; 4 is the first intrinsic layer; 5 is the silicon substrate layer; 6 is the second intrinsic layer; 7 is the N-type doped layer; 8 is the intermediate connection layer; 9 is the hole transport layer; 10 is the perovskite light-absorbing layer; 10-1 is the first sublayer; 10-2 is the second sublayer; 11 is the electron transport layer; 12 is the buffer layer; 13 is the second transparent conductive layer; 14 is the top electrode layer; and 15 is the encapsulation layer. Detailed Implementation

[0126] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments. However, the following examples are merely simplified examples of the present invention and do not represent or limit the scope of protection of the present invention. The scope of protection of the present invention is determined by the claims.

[0127] The 4-nitrochalcone-4'-dimethylamino used in the following examples was prepared by a Claisen-Schmidt condensation reaction of p-nitrobenzaldehyde and methyl 2-methoxybenzoate under sodium hydroxide (NaOH) catalysis. The specific reaction equation is as follows:

[0128] The 2,2'-dimethoxybenzoyl methyl ester used in the following examples was prepared by Claisen condensation reaction of 2-methoxyacetophenone and methyl 2-methoxybenzoate under NaH, and the specific reaction equation is as follows:

[0129] The structure, composition, and corresponding preparation methods of the bottom battery layer used in the following embodiments include the following:

[0130] Structure and Composition: A schematic diagram of the bottom battery layer is shown below. Figure 1 As shown, the structure includes, from bottom to top, a bottom electrode layer 1, a first transparent conductive layer 2, a P-type doped layer 3, a first intrinsic layer 4, a silicon substrate layer 5, a second intrinsic layer 6, and an N-type doped layer 7, stacked sequentially. The bottom electrode layer 1 includes a silver layer with a thickness of 200 nm; the first transparent conductive layer 2 includes an indium tin oxide layer with a thickness of 10 nm; the P-type doped layer 3 includes a P-type amorphous silicon doped layer with a thickness of 20 nm; the first intrinsic layer 4 includes an i-type hydrogenated amorphous silicon layer with a thickness of 30 nm; the silicon substrate layer is a silicon crystal layer with a thickness of 160 μm; the second intrinsic layer 6 includes an i-type hydrogenated amorphous silicon layer with a thickness of 30 nm; and the N-type doped layer 7 includes an N-type amorphous silicon doped layer with a thickness of 20 nm.

[0131] The fabrication process of the aforementioned bottom battery layer is as follows:

[0132] A plasma-enhanced chemical vapor deposition (PECVD) process is used to sequentially deposit an i-type hydrogenated amorphous silicon layer and a p-type amorphous silicon doped layer on one side of a silicon crystal layer to obtain the first intrinsic layer and the p-type doped layer, respectively. Next, an indium tin oxide layer is deposited on the surface of the p-type doped layer away from the first intrinsic layer using a magnetron sputtering process to obtain the first transparent conductive layer. Then, silver metal is deposited on the surface of the first transparent conductive layer away from the p-type doped layer using a thermal evaporation process to obtain the bottom electrode layer. On the opposite side of the silicon crystal layer, a plasma-enhanced chemical vapor deposition (PECVD) process is used to sequentially deposit an i-type hydrogenated amorphous silicon layer and an n-type amorphous silicon doped layer to form the second intrinsic layer and the n-type doped layer, respectively, to obtain the bottom cell layer.

[0133] Example 1

[0134] This embodiment provides a perovskite precursor solution, comprising perovskite material, a stabilizer, and an organic solvent. The stabilizer is 4-nitrochalcone-4'-dimethylamino, with the following chemical structural formula: In the perovskite precursor solution, the concentration of the stabilizer was 0.3 mg / mL, and the perovskite material was Cs. 0.05 MA 0.15 FA 0.8 PbI 2.25 Br 0.75 The organic solvents include DMF and DMSO in a volume ratio of 4:1.

[0135] This embodiment also provides a perovskite-silicon tandem solar cell, the structural schematic of which is shown below. Figure 1 As shown, it includes a bottom battery layer, an intermediate connecting layer 8, and a top battery layer stacked sequentially from bottom to top.

[0136] The intermediate interconnect layer 8 is made of indium tin oxide and has a thickness of 10nm.

[0137] The top cell layer comprises, from bottom to top, a hole transport layer 9, a perovskite light-absorbing layer 10, an electron transport layer 11, a buffer layer 12, a second transparent conductive layer 13, a top electrode layer 14, and an encapsulation layer 15, stacked sequentially. The hole transport layer 9 comprises, from bottom to top, a 20nm thick NiO layer and a 2nm thick SAM layer, the SAM layer being made of Me-4PACz material; the perovskite light-absorbing layer 10 comprises perovskite material Cs. 0.05 MA 0.15 FA 0.8 PbI 2.25 Br 0.75 The perovskite light-absorbing layer 10 comprises a first sublayer 10-1 and a second sublayer 10-2. The first sublayer 10-1 comprises perovskite material and a stabilizer filled in the perovskite material. The second sublayer 10-2 comprises a stabilizer and is located near the electron transport layer 11. The thickness of the second sublayer 10-2 is 5 nm. The electron transport layer 11 is made of C. 60 The first layer has a thickness of 10 nm; the second layer 12 is made of tin dioxide and has a thickness of 10 nm; the third layer 13 is made of indium oxide and has a thickness of 50 nm; the fourth layer 14 is made of silver and has a thickness of 200 nm; and the fifth layer 15 is a transparent glass cover.

[0138] This embodiment also provides a method for fabricating the above-mentioned perovskite-silicon tandem solar cell, including the following steps:

[0139] S1. Indium tin oxide is sputtered onto the surface of the N-type doped layer in the bottom cell layer on the side away from the second intrinsic layer using a magnetron sputtering process to form an intermediate interconnect layer.

[0140] S2. NiO is sputtered on the surface of the intermediate linking layer away from the bottom battery layer using magnetron sputtering to form a NiO layer. Then, the self-assembled monolayer Me-4PACz is dissolved in ethanol solvent at a mass-volume ratio of 1 mg / mL. The resulting solution is spin-coated on the surface of the NiO layer away from the intermediate linking layer at a speed of 3000 rpm. The solution is then annealed at 100°C for 10 min to form a SAM layer, thus obtaining the hole transport layer.

[0141] S3. The perovskite precursor solution was spin-coated onto the surface of the hole transport layer away from the intermediate linker layer using a spin-coating method. The specific spin-coating process included: spin-coating at 1000 rpm for 10 seconds, then spin-coating at 5000 rpm until the end; then, during the last 10 seconds of spin-coating, 200 μL of chlorobenzene was dropped onto the spin-coated surface as an anti-solvent; after spin-coating, annealing was performed at 100°C for 10 minutes; finally, C was deposited using a thermal evaporation method. 60 This forms a perovskite light-absorbing layer and an electron transport layer.

[0142] S4. Continue to deposit tin dioxide on the surface of the electron transport layer away from the perovskite light-absorbing layer using atomic deposition to form a buffer layer.

[0143] S5. An indium oxide transparent electrode layer is deposited on the surface of the buffer layer away from the electron transport layer by atomic deposition. Then, a silver electrode is formed on the surface of the indium oxide transparent electrode layer away from the buffer layer using a mask. Finally, an encapsulation layer is set on top of the cell for encapsulation to obtain a perovskite crystalline silicon tandem solar cell.

[0144] Example 2

[0145] This embodiment provides a perovskite precursor solution, comprising perovskite material, a stabilizer, and an organic solvent. The stabilizer is 2,2'-dimethoxybenzoylmethane, with the following chemical structural formula: In the perovskite precursor solution, the concentration of the stabilizer was 0.1 mg / mL, and the perovskite material was Cs. 0.05 MA 0.15 FA 0.8 PbI 2.25 Br 0.75 The organic solvents include DMF and DMSO in a volume ratio of 4:1.

[0146] This embodiment also provides a perovskite-silicon tandem solar cell, the structural schematic of which is shown below. Figure 1 As shown, it includes a bottom battery layer, an intermediate connecting layer 8, and a top battery layer stacked sequentially from bottom to top.

[0147] The intermediate interconnect layer 8 is made of indium tin oxide and has a thickness of 10nm.

[0148] The top cell layer comprises, from bottom to top, a hole transport layer 9, a perovskite light-absorbing layer 10, an electron transport layer 11, a buffer layer 12, a second transparent conductive layer 13, a top electrode layer 14, and an encapsulation layer 15, stacked sequentially. The hole transport layer 9 comprises a 20nm thick NiO layer and a 2nm thick SAM layer, stacked sequentially from bottom to top. The SAM layer is made of Me-4PACz. The perovskite light-absorbing layer 10 comprises Cs... 0.05 MA 0.15 FA 0.8 PbI 2.25 Br 0.75 The perovskite material and stabilizer have a total thickness of 800 nm. The mass ratio of the perovskite material to the total mass of the stabilizer is 99.9:0.1. The perovskite light-absorbing layer 10 includes a first sublayer 10-1 and a second sublayer 10-2. The first sublayer 10-1 includes the perovskite material and a stabilizer filled in the perovskite material. The second sublayer 10-2 includes the stabilizer and is located near the electron transport layer 11. The thickness of the second sublayer 10-2 is 1 nm. The electron transport layer 11 is made of C. 60 The thickness of the first layer is 20nm; the material of the buffer layer 12 is tin dioxide, and the thickness is 10nm; the material of the second transparent conductive layer 13 is indium oxide, and the thickness is 50nm; the material of the top electrode layer 14 is silver, and the thickness is 200nm; the encapsulation layer 15 is a transparent glass cover.

[0149] This embodiment also provides a method for fabricating the above-mentioned perovskite-silicon tandem solar cell, including the following steps:

[0150] S1. Indium tin oxide is sputtered onto the surface of the N-type doped layer in the bottom cell layer on the side away from the second intrinsic layer using a magnetron sputtering process to form an intermediate interconnect layer.

[0151] S2. NiO is sputtered on the surface of the intermediate linking layer away from the bottom battery layer using magnetron sputtering to form a NiO layer. Then, the self-assembled monolayer Me-4PACz is dissolved in ethanol solvent at a mass-volume ratio of 1 mg / mL. The resulting solution is spin-coated on the surface of the NiO layer away from the intermediate linking layer at a speed of 3000 rpm. The solution is then annealed at 100°C for 10 min to form a SAM layer, thus obtaining the hole transport layer.

[0152] S3. The perovskite precursor solution was spin-coated onto the surface of the hole transport layer away from the intermediate linker layer using a spin-coating method. The specific spin-coating process included: spin-coating at 1000 rpm for 10 seconds, then spin-coating at 5000 rpm until the end; then, during the last 10 seconds of spin-coating, 200 μL of chlorobenzene was dropped onto the spin-coated surface as an anti-solvent; after spin-coating, annealing was performed at 100°C for 10 minutes; finally, C was deposited using a thermal evaporation method. 60This forms a perovskite light-absorbing layer and an electron transport layer.

[0153] S4. Continue to deposit SnO2 on the surface of the electron transport layer away from the perovskite light-absorbing layer using atomic deposition to form a buffer layer.

[0154] S5. An indium oxide transparent electrode layer is deposited on the surface of the buffer layer away from the electron transport layer using magnetron sputtering. Then, a specific silver electrode is formed on the surface of the indium oxide transparent electrode layer away from the buffer layer using a mask. Finally, an encapsulation layer is placed on top of the cell for encapsulation to obtain a perovskite crystalline silicon tandem solar cell.

[0155] Example 3

[0156] The only difference between this embodiment and Example 1 is that the concentration of the stabilizer in the perovskite precursor solution provided in this embodiment is 0.01 mg / mL. All other aspects are the same as in Example 1.

[0157] Example 4

[0158] The only difference between this embodiment and Example 1 is that the concentration of the stabilizer in the perovskite precursor solution provided in this embodiment is 0.6 mg / mL. All other aspects are the same as in Example 1.

[0159] Example 5

[0160] The only difference between this embodiment and Embodiment 1 is that in the perovskite light-absorbing layer of the perovskite crystalline silicon tandem solar cell provided in this embodiment, the mass ratio of the perovskite material to the total mass of the stabilizer is 94:6. All other aspects are the same as in Embodiment 1.

[0161] Example 6

[0162] The only difference between this embodiment and Embodiment 2 is that in the perovskite light-absorbing layer of the perovskite crystalline silicon tandem solar cell provided in this embodiment, the mass ratio of the perovskite material to the total mass of the stabilizer is 94:6. All other aspects are the same as in Embodiment 2.

[0163] Comparative Example 1

[0164] The only difference between this comparative example and Example 1 is that the stabilizer is omitted in the perovskite precursor solution provided in this example. All other aspects are the same as in Example 1.

[0165] Comparative Example 2

[0166] The only difference between this comparative example and Example 2 is that the stabilizer is omitted in the perovskite precursor solution provided in this example. All other aspects are the same as in Example 2.

[0167] The photovoltaic performance of the perovskite-silicon tandem solar cells provided in Examples 1-6 and Comparative Examples 1-2 was tested, and the testing process was as follows:

[0168] (1) Photoelectric conversion efficiency (%): A standard sunlight with a spectrum of AM1.5G was emitted using a solar simulator, and the effective area of ​​the active layer was 1 cm². 2 Incident power 100mW / cm 2 The temperature is 25℃.

[0169] (2) Retention rate of photoelectric conversion efficiency after 100h UV aging (%): 365nm UV light was used, with an incident power of 100mW / cm². 2 After 100 hours of treatment, the photoelectric conversion efficiency of the tandem solar cells was tested, and the retention rate of photoelectric conversion efficiency after 100 hours of ultraviolet aging was calculated.

[0170] (3) Attenuation rate (%) of photoelectric conversion efficiency after 1000 thermal cycles after encapsulation: The perovskite crystalline silicon tandem solar cells provided in the above embodiments and comparative examples were cycled 1000 times under thermal cycling conditions of -40 to +60℃. The photoelectric conversion efficiency of the obtained perovskite crystalline silicon tandem solar cells was tested, and the attenuation rate of photoelectric conversion efficiency after 1000 thermal cycles after encapsulation was calculated.

[0171] (4) Testing under atomic oxygen etching: The perovskite-silicon tandem solar cell was subjected to atomic oxygen etching before the photoelectric conversion efficiency was tested. The atomic oxygen flux was 5 × 10⁻⁶. 15 atoms / cm 2 The time for atomic oxygen erosion is 20 minutes.

[0172] (5) Photovoltaic conversion efficiency degradation rate (%) after proton irradiation: The perovskite-silicon tandem solar cells provided in the above embodiments and comparative examples were subjected to a proton energy of 3 MeV and a proton flux of 1 × 10⁻⁶. 11 p + / cm 2 After irradiation with protons for 20 minutes, the photoelectric conversion efficiency was measured, and the photoelectric conversion efficiency decay rate after proton irradiation was calculated.

[0173] The test results are shown in Table 1.

[0174] Table 1

[0175]

[0176] The test results show that:

[0177] (1) As can be seen from Examples 1 and 2, the perovskite precursor solution provided by the present invention introduces a stabilizer with a specific molecular structure, and the carbonyl group in the stabilizer passivates Pb through coordination. 2+ Despite its defects, the conjugated structure (-CO-CH2-CO-, -CO-CH=CH-) can capture high-energy particles to excite free radicals and work with aryl groups to resist atomic oxygen erosion. The aryl groups can also absorb and dissipate ultraviolet energy. The various functional groups in the organic molecule work together to achieve comprehensive protection for solar cells in the complex environment of outer space.

[0178] (2) As can be seen from Examples 1 and 3-4, under the condition that the amount of stabilizer added remains unchanged, if the concentration of stabilizer in the perovskite precursor solution is too low or too high, it will affect the distribution of stabilizer and thus affect the photovoltaic performance of solar cells.

[0179] (3) As can be seen from Examples 1 and 5, Examples 2 and 6, if the amount of stabilizer added is too high, the performance of the resulting solar cell will be deteriorated.

[0180] (4) By comparing Example 1 and Comparative Example 1, and Example 2 and Comparative Example 2, it can be seen that if the stabilizer is lacking, the present invention will be unable to achieve the desired Pb concentration in the perovskite light-absorbing layer. 2+ The reduction in defects, along with the improvement in resistance to oxidation and ultraviolet radiation, leads to a decrease in the spatial stability of solar cells in complex environments, resulting in a sharp drop in photovoltaic efficiency.

[0181] In summary, this invention provides a precursor solution stabilizer for use in solar cells, comprising a first organic molecule and / or a second organic molecule with a specific chemical structure. The molecule contains a carbonyl group (C=O), an aryl group, and a conjugated structure (-CO-CH2-CO-, -CO-CH=CH-), wherein the C=O group can react with Pb. 2+ Coordination reduces defects and nonradiative recombination; conjugated π electrons capture oxygen radicals, organic radicals, and halogen radicals excited by high-energy particles, and reduce their activity through electron transfer or energy dissipation; aryl groups absorb and dissipate ultraviolet energy, delaying photolysis and aging; simultaneously, the functional groups within the molecule synergistically enhance resistance to atomic oxygen erosion. Through the above mechanisms, the stabilizer of this invention effectively solves the problem of perovskite solar cells being susceptible to defects, irradiation, and oxidation damage in outer space environments, achieving comprehensive protection and improved stability of the device.

[0182] The applicant declares that the above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the protection and disclosure scope of the present invention.

Claims

1. A perovskite precursor solution, characterized in that, The perovskite precursor solution comprises perovskite material, a stabilizer, and an organic solvent; the stabilizer comprises a first organic molecule and / or a second organic molecule. The chemical structural formula of the first organic molecule is shown in formula (1) below: Ar1 and Ar2 are each independently selected from either substituted aryl or unsubstituted aryl groups; The chemical structural formula of the second organic molecule is shown in formula (2) below: Ar3 and Ar4 are each independently selected from either substituted aryl or unsubstituted aryl groups.

2. The perovskite precursor solution according to claim 1, characterized in that, In the first organic molecule, Ar1 and Ar2 are each independently selected from any one of phenyl, naphthyl, alkoxyphenyl, or haloaryl groups; Preferably, the first organic molecule includes 3. The perovskite precursor solution according to claim 1 or 2, characterized in that, In the second organic molecule, Ar3 and Ar4 are each independently selected from either a substituted aryl group containing an electron-withdrawing group or a substituted aryl group containing an electron-donating group; Preferably, the Ar3 comprises a substituted aryl group containing at least one electron-withdrawing group; Preferably, the electron-withdrawing group includes any one or a combination of at least two of the following: a nitro group, a cyano group, or a trifluoromethyl group; Preferably, the Ar4 comprises a substituted aryl group containing at least one electron-donating group; Preferably, the electron-donating group includes any one or a combination of at least two of methoxy, dimethylamino, or hydroxyl groups; Preferably, the second organic molecule includes 4. The perovskite precursor solution according to any one of claims 1-3, characterized in that, In the perovskite precursor solution, the concentration of the stabilizer is 0.05-0.5 mg / mL; Preferably, in the perovskite precursor solution, the mass ratio of the stabilizer to the perovskite material should satisfy the following condition: the mass ratio of the stabilizer to the perovskite material in the formed perovskite light-absorbing layer is x:y, where x+y=100 and 0.1≤x≤5.

5. The perovskite precursor solution according to any one of claims 1-4, characterized in that, The perovskite material in the perovskite precursor solution is an ABX3 type perovskite material, wherein A includes methylammonium cation, formamidinium cation, and Cs. + K + or Rb + B includes any one or at least two of the following, where B includes Pb. 2+ X includes halide anions; Preferably, the halide anion includes Cl. - ,Br - Or any one or at least two of I-.

6. A solar cell, characterized in that, The solar cell comprises a substrate layer, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and a top electrode layer stacked sequentially; the perovskite light-absorbing layer is prepared using a perovskite precursor solution as described in any one of claims 1-5, and the perovskite light-absorbing layer comprises perovskite material and a stabilizer.

7. The solar cell according to claim 6, characterized in that, In the perovskite light-absorbing layer, the ratio of the total mass of the stabilizer to the mass of the perovskite material is x:y, where x+y=100, 0.1≤x≤5; Preferably, the perovskite light-absorbing layer includes a first sublayer, the first sublayer including the perovskite material and a stabilizer filled in the perovskite material; Preferably, the perovskite light-absorbing layer further includes a second sub-layer, which covers the surface of the first sub-layer and is disposed close to the electron transport layer; the second sub-layer includes a stabilizer. Preferably, in the perovskite light-absorbing layer, the thickness of the second sublayer is 1-10 nm; Preferably, the total thickness of the perovskite light-absorbing layer is 300-1200 nm.

8. The solar cell according to claim 6 or 7, characterized in that, A buffer layer is also provided between the electron transport layer and the top electrode layer; Preferably, the electron transport layer is made of fullerene; Preferably, the material of the buffer layer includes tin oxide; Preferably, the solar cell includes any one of a perovskite solar cell or a perovskite-silicon tandem solar cell; Preferably, the perovskite solar cell includes either a single-junction perovskite solar cell or a multi-junction perovskite solar cell.

9. A method for preparing a solar cell according to any one of claims 6-8, characterized in that, The preparation method includes: (1) A hole transport layer is formed on the surface of the basal layer; (2) The perovskite precursor solution as described in any one of claims 1-5 is placed on the surface of the hole transport layer on the side away from the substrate layer to form a perovskite light-absorbing layer, wherein the perovskite light-absorbing layer comprises a perovskite material and a stabilizer. (3) An electron transport layer and a top electrode layer are sequentially disposed on the surface of the perovskite light-absorbing layer away from the hole transport layer to obtain the solar cell.

10. The preparation method according to claim 9, characterized in that, The method of placing the perovskite precursor solution on the surface of the hole transport layer includes: coating the perovskite precursor solution on the surface of the hole transport layer, and obtaining the perovskite light-absorbing layer after annealing. Preferably, the annealing temperature is 90-110℃; Preferably, the annealing time is 5-20 minutes.

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