Method for manufacturing gallium oxide layer

Abstract

The present invention provides a method of manufacturing a gallium oxide layer by which a gallium oxide (GaO) layer is formed on a substrate, the method including a step of forming a first gallium oxide layer and a step of forming a second gallium oxide layer on the first gallium oxide layer, either of the step of forming the first gallium oxide layer and the step of forming the second gallium oxide layer uses an atomic layer deposition (ALD) method, and the other of the step of forming the first gallium oxide layer and the step of forming the second gallium oxide layer uses a chemical vapor deposition (CVD) method.

Description

Technical Field

[0001] This disclosure relates to a method for manufacturing a gallium oxide layer. Background Technology

[0002] Because oxide semiconductors possess high mobility and exhibit large resistance variations depending on oxygen content, they offer the advantage of readily achieving desired physical properties. Furthermore, the manufacturing cost is low because the oxides constituting the oxide semiconductor layers can be formed at relatively low temperatures during the oxide semiconductor fabrication process.

[0003] Various methods exist for depositing oxide semiconductors. For example, atomic layer deposition (ALD) or chemical vapor deposition (CVD) can be used to deposit oxide semiconductors. However, when depositing oxide semiconductors using either ALD or CVD, problems may arise such as inhomogeneous oxide semiconductor film quality or a longer formation time.

[0004] Furthermore, for example, when atomic layer deposition (ALD) is used as a method for depositing oxide semiconductors, the oxide semiconductor layer can be formed by depositing source material and reactive material. In this case, after the steps of spraying source material and spraying reactive material, unwanted source material or reactive material may remain in the chamber, which may become a factor that inhibits the film quality of the oxide semiconductor. Summary of the Invention

[0005] Technical issues This disclosure provides a method for forming a gallium oxide layer that can reduce the time required to deposit the gallium oxide layer while achieving excellent film quality.

[0006] Technical solution According to one aspect of this disclosure, the above and other objectives can be achieved by providing a method for forming a gallium oxide layer on a substrate, the method comprising the steps of forming a first gallium oxide layer and forming a second gallium oxide layer on the first gallium oxide layer, wherein either the step of forming the first gallium oxide layer or the step of forming the second gallium oxide layer uses an atomic layer deposition (ALD) method, and the other step of forming the first gallium oxide layer or the step of forming the second gallium oxide layer uses a chemical vapor deposition (CVD) method.

[0007] Furthermore, the above and other objectives can be achieved by providing a method for forming gallium oxide layers, wherein the step of forming the first gallium oxide layer uses an atomic layer deposition (ALD) method, and the step of forming the second gallium oxide layer uses a chemical vapor deposition (CVD) method.

[0008] Furthermore, the above and other objectives can be achieved by providing a method for forming a gallium oxide layer, the method further comprising: a step of forming a third gallium oxide layer comprising gallium oxide on a second gallium oxide layer, wherein the step of forming the third gallium oxide layer uses an atomic layer deposition (ALD) method.

[0009] Furthermore, the above and other objectives can be achieved by providing a method for forming gallium oxide layers, wherein the step of forming the first gallium oxide layer uses a chemical vapor deposition (CVD) method, and the step of forming the second gallium oxide layer uses an atomic layer deposition (ALD) method.

[0010] Furthermore, the above and other objectives can be achieved by providing a method for forming a gallium oxide layer, the method further comprising the step of forming a third gallium oxide layer comprising gallium oxide on a second gallium oxide layer, wherein the step of forming the third gallium oxide layer uses a chemical vapor deposition (CVD) method.

[0011] Furthermore, the above and other objectives can be achieved by providing a method for forming a gallium oxide layer, wherein the steps of forming a gallium oxide layer using atomic layer deposition (ALD) include: spraying a first source material containing gallium; spraying a first purging gas; spraying a first reactive material containing oxygen; and spraying a second purging gas.

[0012] Furthermore, the above and other objectives can be achieved by providing a method for forming a gallium oxide layer, wherein the first source material comprises trimethylgallium (TMGa) and the first reactant material comprises either oxygen (O2) or nitrous oxide (N2O).

[0013] Furthermore, the above and other objectives can be achieved by providing a method for forming a gallium oxide layer, which further includes a step of forming a plasma containing hydrogen (H2) or argon (Ar) between the step of spraying a first source material and the step of spraying a first reactant material.

[0014] Furthermore, the above and other objectives can be achieved by providing a method for forming a gallium oxide layer, which further includes a step of forming a plasma containing hydrogen (H2) or argon (Ar) after the step of spraying the first reactive material.

[0015] Furthermore, the above and other objectives can be achieved by providing a method for forming a gallium oxide layer, wherein the step of spraying the first reactive material includes the step of forming an oxygen-containing plasma.

[0016] Furthermore, the above and other objectives can be achieved by providing a method for forming a gallium oxide layer, wherein the step of forming a gallium oxide layer using chemical vapor deposition (CVD) includes: a step of spraying a first source material containing gallium; and a step of spraying a first reactive material containing oxygen.

[0017] Furthermore, the above and other objectives can be achieved by providing a method for forming a gallium oxide layer, wherein the first source material comprises trimethylgallium (TMGa) and the first reactant material comprises either oxygen (O2) or nitrous oxide (N2O).

[0018] Furthermore, the above and other objectives can be achieved by providing a method for forming a gallium oxide layer, which further includes a step of forming a plasma containing hydrogen (H2) or argon (Ar) after the step of spraying a first source material and a first reactant material.

[0019] Furthermore, the above and other objectives can be achieved by providing a method for forming a gallium oxide layer, wherein the steps of spraying a first source material and spraying a first reactive material include the step of forming a plasma containing oxygen (O2).

[0020] Beneficial effects Therefore, this disclosure may have the following advantages.

[0021] According to this disclosure, a first gallium oxide layer is formed by atomic layer deposition (ALD) and a second gallium oxide layer is formed by chemical vapor deposition (CVD) to achieve excellent film quality of the gallium oxide layer including the first gallium oxide layer and the second gallium oxide layer, and to increase the speed of gallium oxide layer formation.

[0022] According to this disclosure, a first gallium oxide layer is formed by atomic layer deposition (ALD), a second gallium oxide layer is formed by chemical vapor deposition (CVD), and a third gallium oxide layer is formed by atomic layer deposition (ALD), thereby improving the film quality of the gallium oxide layer including the first gallium oxide layer to the third gallium oxide layer and increasing the formation rate of the gallium oxide layer.

[0023] According to this disclosure, when depositing a first gallium oxide layer using atomic layer deposition (ALD), plasma is applied after the first source material is sprayed and after the first reactant material is sprayed, thereby preventing impurities from being generated in the first source material and the first reactant material.

[0024] According to this disclosure, when a third gallium oxide layer is deposited using an atomic layer deposition (ALD) method, plasma is applied after the third source material is sprayed and after the third reactant material is sprayed, thereby preventing the third source material and the third reactant material from generating impurities. Attached Figure Description

[0025] Figure 1 This is a schematic cross-sectional view of a gallium oxide layer according to an embodiment of the present disclosure.

[0026] Figure 2 This is a schematic cross-sectional view of a gallium oxide layer according to another embodiment of the present disclosure.

[0027] Figure 3 This is a schematic flowchart of a method for forming a gallium oxide layer according to an embodiment of the present disclosure.

[0028] Figure 4 This is a schematic flowchart of a method for forming a gallium oxide layer according to another embodiment of the present disclosure.

[0029] Figure 5 This is a schematic flowchart of a method for forming a gallium oxide layer according to another embodiment of the present disclosure.

[0030] Figure 6 This is a schematic flowchart of a method for forming a gallium oxide layer according to another embodiment of the present disclosure.

[0031] Figure 7 This is a schematic cross-sectional view of a gallium oxide layer according to another embodiment of the present disclosure.

[0032] Figure 8 This is a schematic cross-sectional view of a gallium oxide layer according to another embodiment of the present disclosure.

[0033] Figure 9 This is a schematic flowchart of a method for forming a gallium oxide layer according to another embodiment of the present disclosure.

[0034] Figure 10 This is a schematic flowchart of a method for forming a gallium oxide layer according to another embodiment of the present disclosure.

[0035] Figure 11 This is a schematic flowchart of a method for forming a gallium oxide layer according to another embodiment of the present disclosure.

[0036] Figure 12 This is a schematic flowchart of a method for forming a gallium oxide layer according to another embodiment of the present disclosure.

[0037] Figure 13 This is a view illustrating a gallium oxide layer manufacturing apparatus according to another embodiment of the present disclosure. Detailed Implementation

[0038] The advantages and features of this disclosure and its implementation methods will be illustrated by the following embodiments described with reference to the accompanying drawings. However, this disclosure may be implemented in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of this disclosure to those skilled in the art. Furthermore, this disclosure is limited only by the scope of the claims.

[0039] The shapes, dimensions, scales, angles, and quantities disclosed in the accompanying drawings used to describe embodiments of this disclosure are merely examples, and therefore this disclosure is not limited to the details shown. The same reference numerals always denote the same elements. In the following description, detailed descriptions of relevant known functions or constructions will be omitted where it is determined that such detailed descriptions would unnecessarily obscure the focus of this disclosure.

[0040] When using the terms "comprising," "having," and "including" as described in this specification, another component may be present unless "only" is used. Unless otherwise stated, singular terms may include plural forms.

[0041] When interpreting a component, even if the error range is not described in detail, the component should be interpreted as including such an error range.

[0042] When describing positional relationships, for example, using terms such as "on top of," "above," "below," "under," and "next to" to describe the positional relationship between two parts, the situation where the two parts do not touch can be included unless "exactly" or "directly" is used.

[0043] When it is mentioned that the first element is "above" the second element, it does not mean that the first element is actually above the second element in the drawing. The upper and lower parts of the related object can change depending on the orientation of the object. Therefore, in the drawing or in the actual configuration, the case of the first element being "above" the second element includes the case of the first element being "below" the second element as well as the case of the first element being "above" the second element.

[0044] When describing temporal relationships, such as when describing them with "after", "following", "next", and "before", discontinuous situations may be included unless "immediately after" or "directly" is used.

[0045] It will be understood that although the terms “first,” “second,” etc., may be used in this document to describe various elements, these elements should not be limited to these terms. These terms are only used to distinguish one element from another. For example, a first element may be named a second element, and similarly, a second element may be named a first element.

[0046] It will be understood that the term "at least one" includes all combinations relating to any one of the items. For example, "at least one of the first element, the second element, and the third element" can include all combinations of two or more selected from the first element, the second element, and the third element, as well as each of the first element, the second element, and the third element.

[0047] Features of the various embodiments of this disclosure may be combined or integrated with each other in part or in whole, and may interact with each other and be technically driven in various ways. Embodiments of this disclosure may be implemented independently of each other, or may be implemented in a commonly related relationship.

[0048] In the accompanying drawings, the same or similar elements are indicated by the same reference numerals, even if the same or similar elements are shown in different figures.

[0049] In the embodiments of this disclosure, the source and drain are distinguished from each other for ease of explanation. However, the source and drain can be used interchangeably. Therefore, the source can be the drain, and the drain can be the source. Furthermore, the source in any embodiment of this disclosure can be the drain in another embodiment of this disclosure, and the drain in any embodiment of this disclosure can be the source in another embodiment of this disclosure.

[0050] In one or more embodiments of this disclosure, for ease of explanation, the source region is distinguished from the source, and the drain region is distinguished from the drain. However, embodiments of this disclosure are not limited to this structure. For example, the source region can be the source, and the drain region can be the drain. Furthermore, the source region can be the drain, and the drain region can be the source.

[0051] Figure 1 This is a schematic cross-sectional view of a gallium oxide layer according to an embodiment of the present disclosure.

[0052] like Figure 1 As shown, the gallium oxide layer according to an embodiment of the present disclosure includes a first gallium oxide layer 121 and a second gallium oxide layer 122. In this case, the first gallium oxide layer can be formed by atomic layer deposition (ALD) and the second gallium oxide layer can be formed by chemical vapor deposition (CVD).

[0053] A first gallium oxide layer 121 may be formed on the substrate 100. The first gallium oxide layer 121 may include an oxide semiconductor, for example, the first gallium oxide layer 121 may include a GaO-based oxide semiconductor containing gallium.

[0054] The first gallium oxide layer 121 can be formed using atomic layer deposition (ALD). Because the first gallium oxide layer 121 is formed using atomic layer deposition, the film quality of the first gallium oxide layer 121 is excellent.

[0055] On the other hand, the first gallium oxide layer 121 can be formed using the plasma-enhanced atomic layer deposition (PEALD) method.

[0056] The second gallium oxide layer 122 is formed on the first gallium oxide layer 121.

[0057] The second gallium oxide layer 121 may include an oxide semiconductor; for example, the second gallium oxide layer 122 may include a GaO-based oxide semiconductor containing gallium.

[0058] The second gallium oxide layer 122 can be formed using chemical vapor deposition (CVD). When the second gallium oxide layer 122 is formed using CVD, it can be formed faster than when atomic layer deposition is used.

[0059] On the other hand, the second gallium oxide layer 122 can be formed using plasma-enhanced chemical vapor deposition (PECVD).

[0060] Figure 2 This is a schematic cross-sectional view of a gallium oxide layer according to another embodiment of the present disclosure.

[0061] like Figure 2 As shown, according to another embodiment of the present disclosure, the gallium oxide layer includes a first gallium oxide layer 121, a second gallium oxide layer 122, and a third gallium oxide layer 123. On the other hand, besides the third gallium oxide layer 123, according to... Figure 2 The gallium oxide layer of the embodiment and according to Figure 1 The gallium oxide layer is the same in the embodiments, so the different configurations will be mainly described below.

[0062] The first gallium oxide layer 121 is formed using atomic layer deposition, and the second gallium oxide layer 122 is formed using chemical vapor deposition.

[0063] The third gallium oxide layer 123 is formed on the second gallium oxide layer 122.

[0064] The third gallium oxide layer 123 may include an oxide semiconductor, for example, the third gallium oxide layer 123 may include a GaO-based oxide semiconductor containing gallium.

[0065] The third gallium oxide layer 123 can be formed using atomic layer deposition (ALD). Because the first gallium oxide layer 123 is formed using atomic layer deposition, the film quality of the first gallium oxide layer 123 is excellent.

[0066] On the other hand, the third gallium oxide layer 123 can be formed using the plasma-enhanced atomic layer deposition (PEALD) method.

[0067] Figure 3 This is a schematic flowchart of a method for forming a gallium oxide layer according to an embodiment of the present disclosure.

[0068] like Figure 3 As shown, the method for forming a gallium oxide layer according to an embodiment of the present disclosure includes a step S110 of spraying a first source material, a step S120 of spraying a first reaction material, and a step S130 of spraying a second source material and a second reaction material.

[0069] In this case, the steps S110 of spraying the first source material and S120 of spraying the first reaction material can be performed using the atomic layer deposition (ALD) method.

[0070] Therefore, steps S110 (spraying the first source material) and S120 (spraying the first reaction material) can be performed in a vacuum chamber. Specifically, the substrate can be disposed on a base disposed below the vacuum chamber, and the first source material and the first reaction material can be sprayed through gas jet holes disposed above the vacuum chamber to form a first gallium oxide layer on the substrate (see [link]). Figure 1 and Figure 2 (121).

[0071] When using atomic layer deposition, the steps of spraying a first source material onto a substrate and then spraying a first reaction material can be repeated in one cycle.

[0072] In step S110, the first source material may include a gallium (Ga)-containing material. In this case, the material may be a precursor material or a gaseous material.

[0073] Gallium (Ga)-containing materials can be, for example, trimethylgallium (TMGa). On the other hand, gallium (Ga)-containing materials are not limited to this and can be modified in various ways according to the knowledge in the art.

[0074] Step S120, which involves spraying the first reaction material, can be performed after step S110, which involves spraying the first source material.

[0075] When the first source material contains gallium (Ga), the first reactant material can contain either oxygen (O2) or nitrous oxide (N2O). In this case, gallium oxide (GaO) can be obtained as the first gallium oxide layer (see [link to relevant documentation]). Figure 1 and Figure 2 (121).

[0076] When performing step S120 of spraying the first reactive material, the first reactive material can be sprayed with or without the formation of plasma.

[0077] In this case, when no plasma is formed in step S120 of spraying the first reactive material, the atomic layer deposition (ALD) method is used to form the first gallium oxide layer; when plasma is formed in step S120 of spraying the first reactive material, the plasma enhanced atomic layer deposition (PEALD) method can be used to form the first gallium oxide layer.

[0078] When using plasma-enhanced atomic layer deposition to form the first reactive material in step S120, the plasma may contain oxygen (O2).

[0079] The first gallium oxide layer can be formed using atomic layer deposition (ALD or PEALD) methods, resulting in excellent film quality.

[0080] Step S130, which involves spraying the second source material and the second reaction material, can be performed after step S120, where the first reaction material is sprayed.

[0081] In step S130, where the second source material and the second reactant are sprayed, a chemical vapor deposition (CVD) method can be used. In this case, in the chamber where the first gallium oxide layer is formed by step S110 (spraying the first source material) and step S120 (spraying the first reactant), the second source material and the second reactant are simultaneously sprayed onto the first gallium oxide layer through a gas injection port (see [link]). Figure 1 and Figure 2 On (121), therefore, the first gallium oxide layer (see 121) can be deposited by chemical vapor deposition. Figure 1 and Figure 2 A second gallium oxide layer is formed on (see 121) (see 121) Figure 1 (122).

[0082] The second source material can be a gallium-containing (Ga) material. In this case, the second source material can include, for example, trimethylgallium (TMGa).

[0083] The second reactant can include either oxygen (O2) or nitrous oxide (N2O).

[0084] When the second source material includes gallium (Ga) and the second reactant material contains either oxygen (O2) or nitrous oxide (N2O), gallium oxide (GaO) can be obtained as the second gallium oxide layer (see [link to relevant documentation]). Figure 1 and Figure 2 (121).

[0085] When performing step S130 of spraying the second source material and the second reaction material, the second source material and the second reaction material can be sprayed with or without the formation of plasma.

[0086] In this case, when no plasma is formed in step S130 of spraying the second source material and the second reaction material, a chemical vapor deposition (CVD) method is used to form the second gallium oxide layer (see [link to documentation]). Figure 1 and Figure 2 (See section 121). When plasma is formed in step S130, which involves spraying the second source material and the second reaction material, a plasma-enhanced chemical vapor deposition (PECVD) method can be used to form the second gallium oxide layer (see section 121). Figure 1 and Figure 2 (121 in the text). In this case, the plasma can contain oxygen (O2).

[0087] The second gallium oxide layer can be formed by chemical vapor deposition (CVD or PECVD) (see [link]). Figure 1 and Figure 2 (121 in the middle), so the deposition time can be shortened.

[0088] Although not shown, a step of injecting purge gas can be added between steps S110, S120, and S130. For example, a step of injecting purge gas can be added between step S110 of injecting the first source material and step S120 of injecting the first reactant material, and a step of injecting purge gas can be added between step S120 of injecting the first reactant material and step S130 of injecting the second source material and the second reactant material.

[0089] Figure 4 This is a schematic flowchart of a method for forming a gallium oxide layer according to another embodiment of the present disclosure.

[0090] like Figure 4 As shown, a method for forming a gallium oxide layer according to another embodiment of this disclosure includes a step S110 of spraying a first source material, a step S120 of spraying a first reactive material, a step S130 of spraying a second source material and a second reactive material, a step S140 of spraying a third source material, and a step S150 of spraying a third reactive material. In this case, except for the step S140 of spraying the third source material and the step S150 of spraying the third reactive material, according to... Figure 4The method for forming gallium oxide layers and based on Figure 3 The method for forming gallium oxide layers is the same, so the different configurations will be mainly described below.

[0091] In step S140, which involves spraying a third source material, and in step S150, which involves spraying a third reaction material, an atomic layer deposition (ALD) method may be used.

[0092] Therefore, steps S140 (spraying the third source material) and S150 (spraying the third reaction material) can be performed in the vacuum chamber. Specifically, a substrate on which the first gallium oxide layer and the second gallium oxide layer are formed can be disposed on a base disposed below the vacuum chamber, and the third source material and the third reaction material can be sprayed through gas injection holes disposed above the vacuum chamber to form the third gallium oxide layer (see [link]). Figure 2 (123).

[0093] When using atomic layer deposition, the steps of spraying a third source material onto the substrate and then spraying a third reaction material can be repeated in one cycle.

[0094] Step S140, which involves spraying a third source material, can be performed after step S130, which involves spraying a second source material and a second reaction material.

[0095] In step S140, the third source material may include a gallium (Ga)-containing material. In this case, the material may be a precursor material or a gaseous material.

[0096] Gallium (Ga)-containing materials can be, for example, trimethylgallium (TMGa). On the other hand, gallium (Ga)-containing materials are not limited to this and can be modified in various ways according to the knowledge in the art.

[0097] Step S150, which involves spraying the third source material, can be performed after step S140.

[0098] When the third source material includes a gallium (Ga)-containing material, the third reactant material can contain either oxygen (O2) or nitrous oxide (N2O). In this case, gallium oxide (GaO) can be obtained as the third gallium oxide layer (see [link to documentation]). Figure 2 (123).

[0099] When performing step S150 of spraying the third reactive material, the third reactive material can be sprayed with or without the formation of plasma.

[0100] In this case, when no plasma is formed in step S150 of spraying the third reactive material, the atomic layer deposition (ALD) method is used to form the third gallium oxide layer (see [link]). Figure 2(123) When plasma is formed in step S150 of spraying the third reactive material, the plasma-enhanced atomic layer deposition (PEALD) method can be used to form the third gallium oxide layer (see 123). Figure 2 (123).

[0101] When using plasma-enhanced atomic layer deposition to form the third reactive material in step S150, the plasma may contain oxygen (O2).

[0102] The third gallium oxide layer can be formed using atomic layer deposition (ALD or PEALD) methods (see [link]). Figure 2 (123), therefore the membrane quality can be excellent.

[0103] Although not shown, a step of injecting purge gas can be added between each of steps S110, S120, S130, S140, and S150. For example, a step of injecting purge gas can be added between step S110 (injecting the first source material) and step S120 (injecting the first reactant material), between step S120 (injecting the first reactant material) and step S130 (injecting the second source material and the second reactant material), between step S130 (injecting the second source material and the second reactant material) and step S140 (injecting the third source material), and between step S140 (injecting the third source material) and step S150 (injecting the third reactant material).

[0104] Figure 5 This is a schematic flowchart of a method for forming a gallium oxide layer according to another embodiment of the present disclosure.

[0105] like Figure 5 As shown, a method for forming a gallium oxide layer according to another embodiment of this disclosure includes a step S110 of spraying a first source material, a step S115 of forming a plasma containing hydrogen or argon, a step S120 of spraying a first reactive material, a step S125 of forming a plasma containing hydrogen or argon, and a step S130 of spraying a second source material and a second reactive material. In this case, except for steps S115 and S125 of forming a plasma containing hydrogen or argon, according to Figure 5 The method for forming a gallium oxide layer includes, according to Figure 3 The method for forming gallium oxide layers is the same as that used for other applications, so the following will mainly describe different configurations.

[0106] Steps S115 and S125, which form a plasma containing hydrogen or argon, can be performed after step S110, which involves spraying the first source material, or step S120, which involves spraying the first reaction material.

[0107] In steps S115 and S125, which form a plasma containing hydrogen or argon, a plasma containing hydrogen (H2) or argon (Ar) can be applied to the chamber. Specifically, by performing step S110, which involves spraying the first source material, a plasma containing hydrogen or argon can be applied to the substrate on which the first source material is adsorbed. In this case, unadsorbed impurities remaining on the substrate can be removed.

[0108] Alternatively, a plasma containing hydrogen or argon can be applied to a substrate on which a first gallium oxide layer has been formed by performing step S120 of spraying a first reactive material (in which the first source material and the first reactive material react with each other), thereby removing unreacted impurities remaining on the substrate.

[0109] Therefore, when using the atomic layer deposition method to perform the step S110 of spraying the first source material and the step S120 of spraying the first reaction material, the content of impurities on or inside the formed first gallium oxide layer can be minimized.

[0110] Although not shown, a step of forming a plasma containing hydrogen or argon may be additionally included after step S130, which involves spraying a second source material and a second reaction material.

[0111] Although not shown, a step of injecting purging gas can be added between each of steps S110, S115, S120, S125 and S130.

[0112] Figure 6 This is a schematic flowchart of a method for forming a gallium oxide layer according to another embodiment of the present disclosure.

[0113] like Figure 6 As shown, a method for forming a gallium oxide layer according to another embodiment of the present disclosure includes a step S110 of spraying a first source material, a step S115 of forming a plasma containing hydrogen or argon, a step S120 of spraying a first reactive material, a step S125 of forming a plasma containing hydrogen or argon, a step S130 of spraying a second source material and a second reactive material, a step S140 of spraying a third source material, a step S145 of forming a plasma containing hydrogen or argon, a step S150 of spraying a third reactive material, and a step S155 of forming a plasma containing hydrogen or argon.

[0114] In this case, apart from the step S140 of spraying the third source material and the step of forming a plasma containing hydrogen or argon, according to Figure 6 The method for forming gallium oxide layers and based on Figure 5 The method for forming gallium oxide layers is the same, so the different configurations will be mainly described below.

[0115] Step S140, which involves spraying a third source material, and step S150, which involves spraying a third reactive material, are in accordance with... Figure 4 The steps of spraying the third reactive material and spraying the third source material are the same. Therefore, the steps of spraying the third source material (S140) and spraying the third reactive material (S150) can be performed using atomic layer deposition, in which case a third gallium oxide layer can be formed.

[0116] Steps S145 and S155, which form a plasma containing hydrogen or argon, can be performed after step S140, which involves spraying a third source material, or step S150, which involves spraying a third reaction material.

[0117] In steps S145 and S155, which form a plasma containing hydrogen or argon, a plasma containing hydrogen (H2) or argon (Ar) can be applied to the chamber. Specifically, by performing step S140, which involves spraying a third source material, a plasma containing hydrogen or argon can be applied to the second gallium oxide layer on which the third source material is adsorbed. In this case, unadsorbed impurities remaining on the substrate can be removed.

[0118] Alternatively, a plasma containing hydrogen or argon can be applied to a substrate on which a third gallium oxide layer has been formed by performing step S150 of spraying a third reactive material (in which the third source material and the third reactive material react with each other), thereby removing unreacted impurities remaining on the substrate.

[0119] Therefore, when using the atomic layer deposition method to perform the steps S140 of spraying the third source material and S150 of spraying the third reactive material, the content of impurities on or inside the surface of the third gallium oxide layer can be minimized.

[0120] Although not shown, a step of forming a plasma containing hydrogen or argon may be additionally included between step S130, which involves spraying a second source material and a second reaction material, and step S140, which involves spraying a third source material.

[0121] Although not shown, a step of injecting purging gas can be added between each of steps S110, S115, S120, S125, S130, S140, S145, S150 and S155.

[0122] Figure 7 This is a schematic cross-sectional view of a gallium oxide layer according to another embodiment of the present disclosure.

[0123] like Figure 7As shown, a gallium oxide layer according to another embodiment of the present disclosure includes a first gallium oxide layer 221 and a second gallium oxide layer 222. In this case, the first gallium oxide layer can be formed by chemical vapor deposition (CVD) and the second gallium oxide layer can be formed by atomic layer deposition (ALD).

[0124] The first gallium oxide layer 221 may include an oxide semiconductor, for example, the first gallium oxide layer 221 may include a GaO-based oxide semiconductor containing gallium.

[0125] A first gallium oxide layer 221 can be formed on the substrate 200. The first gallium oxide layer 221 can be formed using a chemical vapor deposition (CVD) method. When the first gallium oxide layer 221 is formed using a chemical vapor deposition method, it can be formed faster than when an atomic layer deposition method is used.

[0126] On the other hand, the first gallium oxide layer 221 can be formed using plasma-enhanced chemical vapor deposition (PECVD).

[0127] The second gallium oxide layer 222 is formed on the first gallium oxide layer 221.

[0128] The second gallium oxide layer 222 may include an oxide semiconductor, for example, the second gallium oxide layer 222 may include a GaO-based oxide semiconductor containing gallium.

[0129] The second gallium oxide layer 222 can be formed using atomic layer deposition (ALD). Because the second gallium oxide layer 222 is formed using atomic layer deposition, the film quality of the second gallium oxide layer 222 is excellent.

[0130] On the other hand, the second gallium oxide layer 222 can be formed using the plasma-enhanced atomic layer deposition (PEALD) method.

[0131] Figure 8 This is a schematic cross-sectional view of a gallium oxide layer according to another embodiment of the present disclosure.

[0132] like Figure 8 As shown, according to another embodiment of the present disclosure, the gallium oxide layer includes a first gallium oxide layer 221, a second gallium oxide layer 222, and a third gallium oxide layer 223. On the other hand, besides the third gallium oxide layer 223, according to... Figure 8 The gallium oxide layer of the embodiment and according to Figure 7 The gallium oxide layer is the same in the embodiments, so the different configurations will be mainly described below.

[0133] The first gallium oxide layer 221 is formed using chemical vapor deposition, and the second gallium oxide layer 222 is formed using atomic layer deposition.

[0134] The third gallium oxide layer 223 is formed on the second gallium oxide layer 222.

[0135] The third gallium oxide layer 223 may include an oxide semiconductor, for example, the third gallium oxide layer 223 may include a GaO-based oxide semiconductor containing gallium.

[0136] The third gallium oxide layer 223 can be formed using chemical vapor deposition (CVD). When the third gallium oxide layer 223 is formed using CVD, it can be formed faster than when atomic layer deposition is used.

[0137] On the other hand, the third gallium oxide layer 223 can be formed using plasma-enhanced chemical vapor deposition (PECVD).

[0138] Figure 9 This is a schematic flowchart of a method for forming a gallium oxide layer according to another embodiment of the present disclosure.

[0139] like Figure 9 As shown, a method for forming a gallium oxide layer according to another embodiment of the present disclosure includes step S210 of spraying a first source material and a first reaction material, step S220 of spraying a second source material, and step S230 of spraying a second reaction material.

[0140] In step S210, which involves spraying the first source material and the second reaction material, a chemical vapor deposition (CVD) method can be used. Step S210 can be performed in a vacuum chamber. Specifically, a substrate is placed on a base positioned below the vacuum chamber, and the first source material and the first reaction material are simultaneously sprayed onto the substrate through gas injection holes positioned above the vacuum chamber, thereby forming a first gallium oxide layer on the substrate using a chemical vapor deposition method (see [link to documentation]). Figure 7 and Figure 8 (221).

[0141] The first source material can be a gallium-containing (Ga) material. In this case, the first source material can include, for example, trimethylgallium (TMGa).

[0142] The first reactant can include either oxygen (O2) or nitrous oxide (N2O).

[0143] When the first source material includes gallium (Ga) and the first reactant material contains either oxygen (O2) or nitrous oxide (N2O), gallium oxide (GaO) can be obtained as the first gallium oxide layer (see [link to relevant documentation]). Figure 7 and Figure 8 (221).

[0144] When performing step S210 of spraying the first source material and the first reaction material, the first source material and the first reaction material can be sprayed with or without forming plasma.

[0145] In this case, when no plasma is formed in step S210 of spraying the first source material and the first reaction material, a first gallium oxide layer is formed using a chemical vapor deposition (CVD) method (see reference). Figure 7 and Figure 8 (Ref. 221) When plasma is formed in step S210, which involves spraying the first source material and the first reactant material, a plasma-enhanced chemical vapor deposition (PECVD) method can be used to form the first gallium oxide layer (see 221). Figure 7 and Figure 8 (221 in the text). In this case, the plasma can contain oxygen (O2).

[0146] The first gallium oxide layer can be formed by chemical vapor deposition (see...) Figure 7 and Figure 8 (221), thus the deposition time can be shortened.

[0147] After step S210 of spraying the first source material and the first reaction material, step S220 of spraying the second source material and step S230 of spraying the second reaction material can be performed.

[0148] In step S220 of spraying the second source material and step S230 of spraying the second reaction material, the atomic layer deposition (ALD) method can be used.

[0149] In the chamber where the first gallium oxide layer is formed by spraying the first source material and the first reaction material in step S210, the second source material and the second reaction material can be sprayed onto the first gallium oxide layer through a gas injection hole (see [link]). Figure 7 and Figure 8 On (221), to the first gallium oxide layer (see 221) by atomic layer deposition method. Figure 7 and Figure 8 A second gallium oxide layer is formed on (see 221) (see Figure 7 and Figure 8 222).

[0150] When using atomic layer deposition methods, in the first gallium oxide layer (see...) Figure 7 and Figure 8 The steps of spraying the second source material and then spraying the second reaction material on 221) can be repeated as a cycle.

[0151] In step S210, the second source material may include a gallium (Ga)-containing material. In this case, the material may be a precursor material or a gaseous material.

[0152] Gallium (Ga)-containing materials can be, for example, trimethylgallium (TMGa). On the other hand, gallium (Ga)-containing materials are not limited to this and can be modified in various ways according to the knowledge in the art.

[0153] Step S230, which involves spraying the second reaction material, can be performed after step S220, which involves spraying the second source material.

[0154] When the second source material includes a gallium-containing (Ga) material, the second reactant material can contain either oxygen (O2) or nitrous oxide (N2O). In this case, gallium oxide (GaO) can be obtained as the second gallium oxide layer (see [link to documentation]). Figure 7 and Figure 8 222).

[0155] When performing step S230 of spraying the second reactive material, the second reactive material can be sprayed with or without the formation of plasma.

[0156] In this case, when no plasma is formed in step S230 of spraying the second reactive material, an atomic layer deposition (ALD) method is used to form the second gallium oxide layer (see [link]). Figure 7 and Figure 8 (222) When plasma is formed in step S230 of spraying the second reactive material, the plasma-enhanced atomic layer deposition (PEALD) method can be used to form the second gallium oxide layer.

[0157] When the second reactive material is formed by using plasma-enhanced atomic layer deposition in step S230, the plasma may contain oxygen (O2).

[0158] The second gallium oxide layer can be formed using atomic layer deposition (ALD or PEALD) methods (see [link]). Figure 7 and Figure 8 (222), therefore, the membrane quality can be excellent.

[0159] Although not shown, a step of injecting purging gas can be added between steps S210, S220 and S230.

[0160] Figure 10 This is a schematic flowchart of a method for forming a gallium oxide layer according to another embodiment of the present disclosure.

[0161] like Figure 10 As shown, a method for forming a gallium oxide layer according to another embodiment of the present disclosure includes steps S210 (spraying a first source material and a first reactant material), S220 (spraying a second source material), S230 (spraying a second reactant material), and S240 (spraying a third source material and a third reactant material). In this case, except for step S240 (spraying the third source material and the third reactant material), according to... Figure 10 The method for forming gallium oxide layers and based on Figure 9 The method for forming gallium oxide layers is the same, so the different configurations will be mainly described below.

[0162] In step S240, when spraying the third source material and the third reaction material, a chemical vapor deposition (CVD) method can be used.

[0163] Therefore, step S240, which involves spraying the third source material and the third reaction material, can be performed in a vacuum chamber. Specifically, a substrate on which the first gallium oxide layer and the second gallium oxide layer are formed can be disposed on a base disposed below the vacuum chamber, and the third source material and the third reaction material can be simultaneously sprayed through gas injection holes disposed above the vacuum chamber to form the third gallium oxide layer (see [link to documentation]). Figure 8 (223 in the middle).

[0164] Step S240, which involves spraying the third source material and the third reaction material, can be performed after step S230, where the second reaction material is sprayed.

[0165] The third source material can be a gallium-containing (Ga) material. In this case, the third source material can include, for example, trimethylgallium (TMGa).

[0166] The third reactant can include either oxygen (O2) or nitrous oxide (N2O).

[0167] When the third source material includes gallium (Ga) and the third reaction material contains either oxygen (O2) or nitrous oxide (N2O), gallium oxide (GaO) can be obtained as the third gallium oxide layer.

[0168] In step S240, the third source material and the third reaction material can be sprayed with or without the formation of plasma.

[0169] In this case, when no plasma is formed in step S240 of spraying the third source material and the third reactant material, a chemical vapor deposition (CVD) method is used to form the third gallium oxide layer (see reference). Figure 8(Ref. 223) When plasma is formed in step S240, which involves spraying the third source material and the third reactant material, a plasma-enhanced chemical vapor deposition (PECVD) method can be used to form the third gallium oxide layer (see 223). Figure 8 (223 in the text). In this case, the plasma can contain oxygen (O2).

[0170] The third gallium oxide layer can be formed by chemical vapor deposition (CVD or PECVD) (see [link]). Figure 8 (223), thus the deposition time can be shortened.

[0171] Although not shown, a step of injecting purging gas can be added between steps S210, S220, S230 and S240.

[0172] Figure 11 This is a schematic flowchart of a method for forming a gallium oxide layer according to another embodiment of the present disclosure.

[0173] like Figure 11 As shown, a method for forming a gallium oxide layer according to another embodiment of this disclosure includes a step S210 of spraying a first source material and a first reactant material, a step S215 of forming a plasma containing hydrogen or argon, a step S220 of spraying a second source material, and a step S230 of spraying a second reactant material. In this case, except for step S215 of forming a plasma containing hydrogen or argon, according to Figure 11 The method for forming gallium oxide layers and based on Figure 9 The method for forming gallium oxide layers is the same, so the different configurations will be mainly described below.

[0174] Step S215, which involves forming a plasma containing hydrogen or argon, can be performed after step S210, which involves spraying the first source material and the first reaction material.

[0175] In step S215, which forms a plasma containing hydrogen or argon, a plasma containing hydrogen (H2) or argon (Ar) can be applied to the chamber. Specifically, in step S210, which involves spraying the first source material and the first reactant material, a plasma containing hydrogen or argon can be applied to a substrate on which a first gallium oxide layer has been formed by reacting the first source material and the first reactant material. In this case, unreacted impurities remaining on the substrate can be removed.

[0176] Therefore, the content of impurities on or inside the surface of the first gallium oxide layer formed by spraying the first source material and the first reaction material in step S210 can be minimized.

[0177] Although not shown, a step of forming a plasma containing hydrogen or argon may be included between step S220, which involves spraying the second source material, and step S230, which involves spraying the second reactant material. Furthermore, a step of forming a plasma containing hydrogen or argon may be included after step S230, which involves spraying the second reactant material.

[0178] Although not shown, a step of injecting purging gas can be added between each of steps S210, S215, S220 and S230.

[0179] Figure 12 This is a schematic flowchart of a method for forming a gallium oxide layer according to another embodiment of the present disclosure.

[0180] like Figure 12 As shown, a method for forming a gallium oxide layer according to another embodiment of the present disclosure includes steps S210 of spraying a first source material and a first reactive material, step S215 of forming a plasma containing hydrogen or argon, step S220 of spraying a second source material, step S230 of spraying a second reactive material, step S240 of spraying a third source material and a third reactive material, and step S245 of forming a plasma containing hydrogen or argon.

[0181] In this case, apart from step S240 of spraying the third source material and the third reactant material and step S245 of forming a plasma containing hydrogen or argon, according to Figure 12 The method for forming gallium oxide layers and based on Figure 11 The method for forming gallium oxide layers is the same, so the different configurations will be mainly described below.

[0182] Step S240, which involves spraying the third source material and the third reactant material, is in accordance with... Figure 10 The steps of spraying the third source material and the third reactant material are the same. Therefore, step S240 of spraying the third source material and the third reactant material can be performed using a chemical vapor deposition method, in which case a third gallium oxide layer can be formed.

[0183] Step S245, which involves forming a plasma containing hydrogen or argon, can be performed after step S240, which involves spraying the third source material and the third reactant material.

[0184] In step S245, which forms a plasma containing hydrogen or argon, a plasma containing hydrogen (H2) or argon (Ar) can be applied to the chamber. Specifically, after step S240, which involves spraying the third source material and the third reactant material, a plasma containing hydrogen or argon can be applied to the formed third gallium oxide layer.

[0185] When a plasma containing hydrogen or argon is applied, impurities generated after step S240, which involves spraying the third source material and the third reactant material, can be removed. Therefore, when step S240, which involves spraying the third source material and the third reactant material, is performed using a chemical vapor deposition method, the content of impurities on or inside the formed third gallium oxide layer can be minimized.

[0186] Although not shown, a step of forming a plasma containing hydrogen or argon may be included between step S220, which involves spraying the second source material, and step S230, which involves spraying the second reactant material. Furthermore, a step of forming a plasma containing hydrogen or argon may be included between step S230, which involves spraying the second reactant material, and step S240, which involves spraying the third source material and the third reactant material.

[0187] Although not shown, a step of injecting purging gas can be added between each of steps S210, S215, S220, S230, S240 and S245.

[0188] Figure 13 This is a view illustrating a gallium oxide layer manufacturing apparatus according to another embodiment of the present disclosure.

[0189] Reference Figure 13 The apparatus for forming a gallium oxide layer according to embodiments of the present disclosure includes an upper circular cover 352 and a lower circular cover 358 as apparatus for depositing a gallium oxide layer. Process gases (i.e., source materials and reactants) can be injected into the upper circular cover 352, and the process gases (i.e., source materials and reactants) can be discharged from the upper circular cover 352. The source materials and reactants can be injected by a gas injection unit. The gas injection unit includes one or more injectors, and the process gases can be injected into a process space by the one or more injectors. The process space can be located below the upper circular cover 352. By supplying purging gas to the lower circular cover 358 and process gases to the upper circular cover 352, the deposition of abnormal layers in the lower circular cover 358 can be suppressed by preventing the process gases from flowing into the lower circular cover 358. Furthermore, by forming a uniform plasma, a uniform layer can be formed without rotating the substrate 374.

[0190] In addition, gallium oxide (GaO) for this step can be formed using a plasma-enhanced ALD (PEALD) device that uses an inductively coupled plasma source.

[0191] The apparatus for forming a gallium oxide layer, having an upper dome 352 and a lower dome 358, includes an upper liner 354 and a lower liner 356 to prevent unwanted layer deposition on the inner wall of the chamber 360. The upper liner 354 and the lower liner 356 can be replaced or cleaned periodically.

[0192] The lamp heater 366 located below the lower circular cover 358 is a ring-shaped lamp heater, and multiple lamp heaters 366 can be installed. The multiple lamp heaters 366 can be independently controlled by power supply to uniformly heat the substrate 374.

[0193] A high-vacuum pump 390, consisting of a turbomolecular pump (TMP) connected to the discharge section of chamber 360, maintains the base vacuum inside chamber 360, thus enabling the formation of a stable plasma at pressures below a few torr during the process.

[0194] By providing infrared light that is reflected again from the electromagnetic wave shielding housing 330 to the substrate 374, the gallium oxide layer forming apparatus of this disclosure can form a uniform layer on the substrate 374 at high speed, while reducing the performance degradation caused by the antenna 310, which forms an inductively coupled plasma disposed on the upper cover 352, being heated by infrared light.

[0195] Reference Figure 13 An apparatus 300 for forming a gallium oxide layer according to an embodiment of the present disclosure includes a chamber 360 having sidewalls, a substrate support 372 disposed inside the chamber and supporting a substrate, an upper dome 352 covering the upper surface of the chamber 360 and formed of a transparent dielectric material, an antenna 310 disposed on the upper dome 352 to form inductively coupled plasma, and an electromagnetic wave shielding housing 330 configured to surround the antenna 310. The electromagnetic wave shielding housing 330 can be heated by a lamp-type heater.

[0196] Antenna 310 may include two single-turn element antennas, and these two single-turn element antennas may be connected in parallel to RF power supply 340.

[0197] In the step of forming hydrogen plasma after the step of ejecting reactive material and in the step of forming plasma between the step of ejecting source material and the step of ejecting reactive material, antenna 310 can form plasma.

[0198] Source materials and reactants can be injected into the process space within the upper cover 352 and lower cover 358 using an injector (not shown). Source materials and reactants can be injected into the chamber 360 along the direction of the upper cover 352 or horizontally using the injector.

[0199] The chamber 360 can be formed of a conductor, its internal space can be cylindrical, and its external shape can be a rectangular parallelepiped. The chamber 360 can be cooled by a coolant. The chamber 360, the upper cover 352, and the lower cover 358 are combined to provide a closed space.

[0200] A substrate inlet 360a may be provided on one side surface of the chamber 360, and an outlet port 360b may be provided on the other side surface of the chamber 360 opposite to the substrate inlet 360a. The outlet port 360b may be connected to a high vacuum pump 390. The high vacuum pump 390 may be a turbomolecular pump. Even during the process, the high vacuum pump 390 can maintain a low base pressure and can maintain a pressure below several Torr. The upper surface of the outlet port 360b may be equal to or lower than the upper surface of the substrate inlet 360a.

[0201] The upper round cover 352 can be made of a transparent dielectric material such as quartz, sapphire, or ceramic. The upper round cover 352 can be made of ceramic material. Ceramic material has better corrosion resistance than quartz.

[0202] The upper round cover 352 can be inserted into and engaged with a recess formed on the upper surface of the chamber 360. For vacuum sealing, the engaging portion of the upper round cover 352 engaged with the chamber 360 can be in the shape of a gasket. The upper round cover 352 can be arc-shaped or elliptical. The upper round cover 352 can transmit infrared light incident from below.

[0203] Infrared rays reflected from the electromagnetic wave shielding housing 330 can pass through the upper round cover 352 and enter the substrate 374.

[0204] The lower cover 358 can be made of quartz or sapphire as a transparent dielectric material. The lower cover 358 may include a washer-shaped fitting portion that engages with a recess formed on the lower surface of the chamber 360, a funnel-shaped lower cover body extending below the fitting portion, and a cylindrical tube extending downward from the center of the lower cover body. The lower cover 358 can be inserted into the recess formed on the lower surface of the chamber 360 and engaged with the chamber 360. For vacuum sealing, the fitting portion of the lower cover 358 engaged with the chamber 360 may have a washer shape.

[0205] The drive shafts of the first lifting member 384 and the second lifting member 382 can be configured to insert into the cylindrical tube of the lower cover 358. Purge gas supplied through the lower cover 358 can be supplied via a flow path. The flow path can be the cylindrical tube of the lower cover 358. The purge gas can be an inert gas such as argon.

[0206] The upper pad 354 can be made of a transparent dielectric material. For example, the upper pad 354 can be made of quartz, alumina, sapphire, or aluminum nitride. The upper pad 354 can be made of a material that inhibits the deposition of abnormal layers.

[0207] A heat insulation portion 362 may be disposed between the lower surface of the chamber 360 and the reflector 361, and may be annular. The heat insulation portion 362 reduces heat transfer from the heated reflector 361 to the chamber 360. The heat insulation portion 362 may be made of ceramic. The upper surface of the heat insulation portion 362 may include a recess. The recess in the heat insulation portion 362 and the recess on the lower surface of the chamber 360 can accommodate and vacuum-seal the gasket-shaped joint portion of the lower dome 358.

[0208] The concentric lamp heaters 366 may include a plurality of concentric and annular lamp heaters and may be connected to a power supply 364. The plurality of concentric and annular lamp heaters 366 may be arranged at fixed intervals along the inclined surface of the lower cover 358, and the concentric lamp heaters 366 are divided into three groups to receive power independently of each other. The concentric and annular lamp heaters 366 may be inserted into and aligned with annular grooves formed on the inclined surface of the reflector 361.

[0209] For example, the concentric lamp heaters 366 can be halogen lamp heaters, and there can be eight lamp heaters. The three lamp heaters at the bottom can form a first group, the two lamp heaters in the middle can form a second group, and the three lamp heaters at the top can form a third group. The first group can be connected to a first power supply 364a, the second group can be connected to a second power supply 364b, and the third group can be connected to a third power supply 364c. The first power supply 364a to the third power supply 364c can be independently controlled to uniformly heat the substrate.

[0210] The RF power supply 340 supplies RF power to the antenna 310 via the impedance matching box (IMB) 342 and power line 343. For high current flow, the antenna 310 must ensure a sufficient cross-sectional area; preferably, it forms a closed loop to generate sufficient magnetic flux. The antenna 310 can use a vertically erected strip to absorb infrared radiation incident from its upper or lower portion and minimize the increase in resistance caused by heating. The antenna 310 provides high transmittance for infrared radiation.

[0211] Furthermore, antenna 310 can be coated with gold (Au) or silver (Ag) to increase infrared reflectivity. Additionally, to ensure sufficient magnetic flux, antenna 310 with a two-layer structure can be used. In a single-turn element antenna, the location where the RF power is supplied is situated on the upper surface, thus reducing power loss due to capacitive coupling.

[0212] The lower dome 358 may cover the lower surface of the chamber 360, may be formed of a transparent dielectric material, and may have the same curvature as the upper dome 352. A lamp heater 366 may be disposed on the lower surface of the lower dome 358. A reflector 361 may be disposed on the lower surface of the lamp heater 366.

[0213] In addition, a control unit (not shown) for controlling the RF power supply 340 may also be included. Here, for example, a source material supply path (not shown) and a reaction material supply path (not shown) for supplying the source gas may be formed independently.

[0214] On the other hand, the substrate can be mounted on the substrate support 372 within the chamber 360 for the layer formation step. The substrate 374 may include various substrates for forming gallium oxide (GaO) layers.

[0215] For example, the substrate support portion 372 may be provided with an electrostatic chuck or the like, so as to place and support the substrate 374, thereby adsorbing and holding the substrate 374 by electrostatic force, or supporting the substrate 374 by vacuum adsorption or mechanical force.

[0216] The clamp 350 can be configured to cover the edge of the upper dome 352. The clamp 350 is formed of a conductor and can be cooled by cooling water. The lower surface of the clamp 350 has a recess for a washer-shaped engagement portion to be engaged with the upper dome 352, and may include a bent portion 350a to cover a portion of the bent portion of the upper dome 352. The bent portion 350a of the clamp 350 may be gold-plated to reflect infrared radiation. The inner diameter of the clamp 350 may be substantially the same as the inner diameter of the upper gasket 354. Furthermore, the inner diameter of the clamp 350 may be the same as the diameter of the electromagnetic wave shielding housing 330.

[0217] The chamber housing 332 can be mounted on the clamp 350 and can be configured to cover the electromagnetic wave shielding housing 330.

[0218] On the other hand, gallium (Ga) gas can be supplied as a source material, and oxygen (O) gas can be supplied as a reactant. Here, for example, the source material containing gallium (Ga) gas may include trimethylgallium (TMGa) gas, and the reactant material containing oxygen gas may include oxygen (O2) or nitrous oxide (N2O) gas.

[0219] It will be apparent to those skilled in the art that various substitutions, modifications, and alterations can be made within the scope of this disclosure without departing from its spirit or scope. Therefore, the scope of this disclosure is defined by the appended claims, and all changes or modifications derived from the meaning, scope, and equivalents of the claims should be understood to be included within the scope of this disclosure.

Claims

1. A method for forming a gallium oxide layer on a substrate, comprising: The steps for forming the first gallium oxide layer; as well as The step of forming a second gallium oxide layer on the first gallium oxide layer. Either the step of forming the first gallium oxide layer or the step of forming the second gallium oxide layer uses atomic layer deposition (ALD), and the other step of forming the first gallium oxide layer or the step of forming the second gallium oxide layer uses chemical vapor deposition (CVD).

2. The method for forming a gallium oxide layer as described in claim 1, wherein, The step of forming the first gallium oxide layer uses atomic layer deposition (ALD) and the step of forming the second gallium oxide layer uses chemical vapor deposition (CVD).

3. The method for forming a gallium oxide layer as described in claim 2, further comprising: The step of forming a third gallium oxide layer containing gallium oxide on the second gallium oxide layer. The step of forming the third gallium oxide layer uses atomic layer deposition (ALD).

4. The method for forming a gallium oxide layer as described in claim 1, wherein, The step of forming the first gallium oxide layer uses a chemical vapor deposition (CVD) method, and the step of forming the second gallium oxide layer uses an atomic layer deposition (ALD) method.

5. The method for forming a gallium oxide layer as described in claim 4, further comprising: The step of forming a third gallium oxide layer containing gallium oxide on the second gallium oxide layer. The step of forming the third gallium oxide layer uses a chemical vapor deposition (CVD) method.

6. The method of forming a gallium oxide layer according to any one of claims 1 to 5, wherein, Either of the steps of forming the first gallium oxide layer and forming the second gallium oxide layer using atomic layer deposition (ALD) includes: The step of spraying a first source material containing gallium; The step of injecting the first purging gas; The step of spraying a first reactive material containing oxygen; and The step of injecting the second purging gas.

7. The method for forming a gallium oxide layer as described in claim 6, wherein, The first source material comprises trimethylgallium (TMGa), and the first reaction material comprises either oxygen (O2) or nitrous oxide (N2O).

8. The method for forming a gallium oxide layer as described in claim 6, further comprising: Between the step of spraying the first source material and the step of spraying the first reaction material, a step is taken to form a plasma containing hydrogen (H2) or argon (Ar).

9. The method for forming a gallium oxide layer as described in claim 6, further comprising: Following the step of spraying the first reactive material, a step is taken to form a plasma containing hydrogen (H2) or argon (Ar).

10. The method of forming a gallium oxide layer as described in claim 6, wherein, The step of spraying the first reactive material includes the step of forming an oxygen-containing plasma.

11. The method of forming a gallium oxide layer according to any one of claims 1 to 5, wherein, The other of the steps of forming the first gallium oxide layer and forming the second gallium oxide layer using a chemical vapor deposition (CVD) method includes: The step of spraying a first source material containing gallium; and The step of spraying a first reactive material containing oxygen.

12. The method of forming a gallium oxide layer as described in claim 11, wherein, The first source material includes trimethylgallium (TMGa), and the first reaction material includes either oxygen (O2) or nitrous oxide (N2O).

13. The method of forming a gallium oxide layer as claimed in claim 11, further comprising: Following the step of spraying the first source material and the first reaction material, a step of forming a plasma containing hydrogen (H2) or argon (Ar) is performed.

14. The method of forming a gallium oxide layer as described in claim 11, wherein, The steps of spraying the first source material and spraying the first reaction material include the step of forming a plasma containing oxygen (O2).

Images