Substrate processing apparatus and substrate processing method

Abstract

The substrate processing apparatus includes: a substrate rotating unit that holds and rotates a substrate; a processing liquid supply unit that supplies a processing liquid to the peripheral edge of the substrate; and a control unit that controls the substrate rotating unit and the processing liquid supply unit, the control unit controls the substrate rotating unit and the processing liquid supply unit in an adjusted etching mode in which the processing liquid for liquid film formation is supplied from the processing liquid supply unit to the peripheral edge portion while the substrate is rotated to form a liquid film in the etching region of the peripheral edge portion, and after that, the processing liquid for liquid film formation is supplied from the processing liquid supply unit to the peripheral edge portion to form a liquid film in the etching region of the peripheral edge portion. And etching the surface film of the etching region by supplying an etching treatment liquid to the etching region in a state where the liquid film is formed.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] There are known devices that use solutions such as hydrofluoric acid to remove natural oxide films formed on the periphery of substrates such as semiconductor wafers (see Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent No. 6971699. Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] When removing the oxide film from the periphery of the substrate, the etch interface sometimes becomes uneven and jagged. Eliminating this jagged etch interface, once formed at the periphery of the substrate, through subsequent processing is not straightforward.

[0008] This invention provides a technique that facilitates obtaining a uniform etch interface through substrate etching.

[0009] Technical means for solving problems

[0010] One aspect of the present invention relates to a substrate processing apparatus, comprising: a substrate rotating section for holding and rotating a substrate; a processing liquid supply section for supplying processing liquid to a peripheral portion of the substrate; and a control section for controlling the substrate rotating section and the processing liquid supply section, wherein the control section controls the substrate rotating section and the processing liquid supply section in an adjustable etching mode, wherein while rotating the substrate, a liquid film forming processing liquid is supplied from the processing liquid supply section to the peripheral portion to form a liquid film in an etched area of ​​the peripheral portion, and then, while the liquid film has been formed, an etching processing liquid is supplied to the etched area to etch the surface film of the etched area.

[0011] According to the present invention, it is advantageous to obtain a uniform etch interface through the etching process of the substrate. Attached Figure Description

[0012] Figure 1 This is a schematic diagram illustrating an example of a substrate processing system.

[0013] Figure 2 This is a schematic partial cross-sectional view representing an example of a processing unit.

[0014] Figure 3 This is a schematic diagram illustrating an example of a drive system that moves the first, second, and third processing fluid nozzles.

[0015] Figure 4 This is a block diagram illustrating an example of the functional structure of the control unit.

[0016] Figure 5 This is a schematic cross-sectional view illustrating an example of etching treatment on the periphery of a substrate.

[0017] Figure 6 This is an enlarged top view of the periphery of the substrate, showing an example of the state of the processing fluid nozzle that is discharging the processing fluid just after it has moved from the retracted position to the processing position.

[0018] Figure 7 This is an enlarged top view of the periphery of the substrate, and is an example of a liquid film of the processing liquid in a state where at least a portion of the substrate body is exposed after being removed by etching of the surface film.

[0019] Figure 8 This is an enlarged top view of the periphery of the substrate, and is another example of a liquid film of the processing liquid in a state where at least a portion of the substrate body is exposed by etching away the surface film.

[0020] Figure 9 This is a diagram illustrating an example of the processing flow for the first standard etching mode.

[0021] Figure 10 This is a diagram illustrating an example of the processing flow for the first adjusted etching mode.

[0022] Figure 11A This is a diagram illustrating the concept of the processing flow for the first adjustable etching mode.

[0023] Figure 11B This is a diagram illustrating the concept of the processing flow for the first adjustable etching mode.

[0024] Figure 11C This is a diagram illustrating the concept of the processing flow for the first adjustable etching mode.

[0025] Figure 12 This is a diagram illustrating an example of the processing flow for the second adjustable etching mode.

[0026] Figure 13 This is a diagram illustrating an example of the processing flow for the second standard etching mode.

[0027] Figure 14 This is a diagram illustrating an example of the processing flow for the third adjustable etching mode.

[0028] Figure 15A This is a diagram illustrating the concept of the processing flow for the third adjustable etching mode.

[0029] Figure 15BThis is a diagram illustrating the concept of the processing flow for the third adjustable etching mode.

[0030] Figure 15C This is a diagram illustrating the concept of the processing flow for the third adjustable etching mode.

[0031] Figure 16 This is a diagram illustrating an example of the processing flow for the fourth adjustable etching mode.

[0032] Figure 17 This is a diagram illustrating an example of the processing flow for the fifth adjustable etching mode.

[0033] Figure 18 This is a schematic top view of an example of a substrate in which etching solution (e.g., chemical solution) is supplied from a nozzle to the periphery.

[0034] Figure 19A It is Figure 18 The enlarged top view of the area indicated by the reference numeral "XIXA" in the accompanying drawings, in particular, shows an example of the hydrophilic surface properties of the periphery of the substrate to which the etching solution is supplied.

[0035] Figure 19B It is Figure 18 The attached figure shows an enlarged top view of the area indicated by the reference numeral "XIXA", in particular an example of the hydrophobic surface properties of the periphery of the substrate to which the etching solution is supplied.

[0036] Figure 20 This is a flowchart illustrating an example of an etching mode determination method. Detailed Implementation

[0037] Referring to the accompanying drawings, exemplary embodiments of the present invention will be described. The shapes and dimensions of the elements shown in the drawings may not correspond to the actual shapes and dimensions of the objects, nor may the arrangement relationships and size ratios between the elements correspond to the actual arrangement relationships and size ratios. Furthermore, the arrangement relationships and size ratios between elements may not be consistent across different drawings.

[0038] Figure 1 This is a schematic diagram illustrating an example of a substrate processing system 80.

[0039] Figure 1 The substrate processing system 80 shown has an infeed / outfeed station 91 and a processing station 92. The infeed / outfeed station 91 includes a mounting section 81 having multiple carriers C; and a transport section 82 provided with a first transport mechanism 83 and a transfer section 84. Multiple substrates W are horizontally housed in each carrier C. The substrates W are typically made of semiconductor wafers, but are not limited thereto. The processing station 92 is provided with multiple processing units 10 disposed on both sides of a transport path 86; and a second transport mechanism 85 that reciprocates along the transport path 86.

[0040] The substrate W is taken from the carrier C by the first conveying mechanism 83 and placed in the transfer section 84, and then taken from the transfer section 84 by the second conveying mechanism 85. The substrate W is then fed by the second conveying mechanism 85 into the corresponding processing unit 10, where the prescribed processing is performed. The substrate W is then taken from the corresponding processing unit 10 by the second conveying mechanism 85 and placed in the transfer section 84, and then returned to the carrier C in the placement section 81 by the first conveying mechanism 83. Alternatively, the substrate W can be returned to the carrier C after being processed by multiple processing units 10.

[0041] In the aforementioned substrate processing system 80, two or more of the plurality of processing units 10 may have the same structure or different structures, and may perform the same or different processes. Each processing unit 10 can perform various processes on the substrate W by supplying various processing fluids (such as chemical solutions, rinsing solutions, and cleaning solutions) to the substrate W.

[0042] The substrate processing system 80 includes a control unit 93. The control unit 93, for example, is a computer and includes an arithmetic processing unit and a storage unit. The storage unit of the control unit 93 stores programs and data for performing various processes in the substrate processing system 80. The arithmetic processing unit of the control unit 93 controls various mechanisms of the substrate processing system 80 to perform various processes by appropriately reading and executing the programs stored in the storage unit.

[0043] The programs and data stored in the storage section of the control unit 93 can be recorded on a computer-readable storage medium, or installed from that storage medium into the storage section. Examples of computer-readable storage media include hard disks (HD), floppy disks (FD), optical disks (CD), magneto-optical disks (MO), and memory cards.

[0044] Thus, in Figure 1 In the substrate processing system 80 shown, the mounting section 81, which has multiple carriers C, functions as a substrate holding unit that holds multiple substrates W. Furthermore, each processing unit 10 functions as a substrate processing apparatus that processes each substrate W. Additionally, the transport section 82, the first transport mechanism 83, the transfer section 84, the second transport mechanism 85, and the transport path 86 function as a substrate transport unit that transports each substrate W between the substrate holding unit and the substrate processing apparatus. Finally, the control section 93 functions as a processing control section that controls the substrate processing apparatus.

[0045] Figure 2 This is a schematic partial cross-sectional view showing an example of the processing unit 10.

[0046] Figure 2The processing unit 10 shown is an apparatus for etching away a surface film (e.g., a natural oxide film) formed on the periphery of a substrate W, including: a substrate rotation unit 11 that holds the substrate W and rotates it; and a processing liquid supply unit 12 that can supply processing liquid to the substrate W (e.g., the periphery Wp).

[0047] The substrate rotating part 11 has: a holding part 31 that holds the substrate W horizontally; a rotating shaft 32 that is mounted on the holding part 31 and extends downward (vertically) from the holding part 31; and a rotating drive part 33 that rotates the holding part 31 via the rotating shaft 32.

[0048] The substrate W is held by the holding part 31 while it is placed on the upper surface of the holding part 31, and can rotate together with the holding part 31. The holding part 31 does not limit the method of holding the substrate W; for example, the holding part 31 can hold the substrate W by vacuum adsorption.

[0049] The rotating shaft 32 is rotatably supported by the chamber 39 via bearings 38. The rotary drive unit 33 includes a pulley 34 mounted on the lower end of the rotating shaft 32, a motor 35, a pulley 36 mounted on the rotating shaft of the motor 35, and a drive belt 37 wound around the pulleys 34 and 36. The rotational driving force of the motor 35 is transmitted to the rotating shaft 32 via the pulleys 36, drive belt 37, and pulleys 34, thereby rotating the rotating shaft 32, and consequently, the retaining part 31 and the substrate W rotate integrally with the rotating shaft 32.

[0050] A holding part 31 is disposed within a chamber 39, and the substrate W held by the holding part 31 is located within the chamber 39. The top of the chamber 39 has an upper opening 40 through which gas (e.g., inactive gas such as nitrogen) from an FFU (Fan Filter Unit, not shown) is supplied into the chamber 39, forming a downward flow within the chamber 39. The bottom of the chamber 39 has a lower opening 41 through which gas within the chamber 39 is discharged to the outside. The side of the chamber 39 has a side opening 42, and a gate 43 for opening and closing the side opening 42 is installed on the side of the chamber 39. The substrate W is fed into the chamber 39 from the outside via the side opening 42 and is also discharged from the chamber 39 to the outside.

[0051] The processing liquid supply unit 12 can adopt any structure as long as it can supply the liquid film forming processing liquid and the etching processing liquid to the peripheral portion Wp of the substrate W as described later. Figure 2 The processing fluid supply unit 12 shown has a first processing fluid supply unit 50, a second processing fluid supply unit 60 and a third processing fluid supply unit 70.

[0052] The first processing fluid supply unit 50 includes: a first processing fluid nozzle 51 disposed within a chamber 39; a first processing fluid supply source 53 connected to the first processing fluid nozzle 51 via a first processing fluid supply pipe 52; and a first processing fluid valve 54 disposed on the first processing fluid supply pipe 52. The first processing fluid nozzle 51 discharges first processing fluid supplied from the first processing fluid supply source 53 via the first processing fluid supply pipe 52. The flow rate of the first processing fluid flowing in the first processing fluid supply pipe 52 can be adjusted by the first processing fluid valve 54. That is, the first processing fluid valve 54 is controlled in the control unit 93 (see reference 93). Figure 1 Under the control of ), the supply of first processing liquid to the first processing liquid nozzle 51 and the amount of first processing liquid to be supplied are adjusted.

[0053] Similarly, in the second processing fluid supply unit 60, the second processing fluid nozzle 61, disposed within the chamber 39, discharges the second processing fluid supplied from the second processing fluid supply source 63 via the second processing fluid supply pipe 62. Then, under the control of the control unit 93, the second processing fluid valve 64 adjusts whether to supply the second processing fluid to the second processing fluid nozzle 61 and the desired supply amount. Furthermore, in the third processing fluid supply unit 70, the third processing fluid nozzle 71, disposed within the chamber 39, discharges the third processing fluid supplied from the third processing fluid supply source 73 via the third processing fluid supply pipe 72. Then, under the control of the control unit 93, the third processing fluid valve 74 adjusts whether to supply the third processing fluid to the third processing fluid nozzle 71 and the desired supply amount.

[0054] As described above, the specific compositions of the first, second, and third treatment liquids discharged from the first treatment liquid nozzle 51, the second treatment liquid nozzle 61, and the third treatment liquid nozzle 71 are not limited. For example, the first treatment liquid discharged from the first treatment liquid nozzle 51 could also be DIW (De-ionized Water). Additionally, the second treatment liquid discharged from the second treatment liquid nozzle 61 could also be hydrofluoric acid (e.g., diluted hydrofluoric acid (DHF)). Furthermore, the third treatment liquid discharged from the third treatment liquid nozzle 71 could also be SC1 (a mixture of ammonia and hydrogen peroxide).

[0055] Figure 3 This is a schematic diagram showing an example of the structure of a drive system that moves the first processing fluid nozzle 51, the second processing fluid nozzle 61, and the third processing fluid nozzle 71.

[0056] The first processing liquid nozzle 51, the second processing liquid nozzle 61, and the third processing liquid nozzle 71 of this embodiment can have any structure suitable for discharging the first to third processing liquids to the periphery Wp of the substrate W. Figure 3In the example shown, the first processing liquid nozzle 51, the second processing liquid nozzle 61, and the third processing liquid nozzle 71 are configured to supply the first to third processing liquids to the peripheral portion Wp (particularly the upper surface of the substrate W) at a predetermined angle. The discharge angle of the first to third processing liquids from the first processing liquid nozzle 51, the second processing liquid nozzle 61, and the third processing liquid nozzle 71 is not limited. For example, the corresponding processing liquids may be discharged from each processing liquid nozzle 51, 61, 71 at an angle downstream of the substrate W in the direction of rotation relative to the vertical direction. Furthermore, when viewed from above, the corresponding processing liquids may also be discharged from each processing liquid nozzle 51, 61, 71 at an angle downstream of the substrate W in the direction of rotation relative to the radial direction (i.e., the outer side in the radial direction) of the substrate W.

[0057] The first processing liquid nozzle 51, the second processing liquid nozzle 61, and the third processing liquid nozzle 71 can be configured at processing positions P1, P2, and P3 for discharging processing liquid to the peripheral portion Wp of the substrate W, and at retraction positions Q1, Q2, and Q3 at positions different from the processing positions in the radial direction of the substrate W. The processing positions P1, P2, and P3 are set at locations where the processing liquid discharged from each processing liquid nozzle 51, 61, and 71 can be supplied to the desired area (etched area described later) of the peripheral portion Wp of the substrate W. On the other hand, the retraction positions Q1, Q2, and Q3 are set such that even if processing liquid is discharged from each processing liquid nozzle 51, 61, and 71, such processing liquid will not reach the substrate W.

[0058] exist Figure 3 In the example shown, the first processing liquid nozzle 51 moves between the processing position P1 and the retraction position Q1 via the first nozzle drive unit 55 driven under the control of the control unit 93. Similarly, the second processing liquid nozzle 61 and the third processing liquid nozzle 71 move between the processing positions P2 and P3 and the retraction positions Q2 and Q3 via the second nozzle drive unit 65 and the third nozzle drive unit 75 driven under the control of the control unit 93.

[0059] Figure 2 The processing unit 10 shown also includes: a heating mechanism 44 that heats the substrate W held by the holding part 31; and an imaging device 49 that takes an image of the upper surface (processing surface) of the substrate W held by the holding part 31.

[0060] In this example, the heating mechanism 44 has a heating fluid supply section 45 that discharges inactive gases (heating fluids) such as nitrogen heated by the heater 47. The substrate W held by the holding section 31 is heated using the inactive gas discharged from the heating fluid supply section 45. Figure 2 In the heating fluid supply unit 45 shown, in the control unit 93 (see reference) Figure 1Under the control of the heater 47, the inactive gas supplied from the heating fluid supply source 48 is discharged from the heating fluid ejection section 46 toward the back side of the substrate W. This inactive gas is heated by the heater 47 during its journey from the heating fluid supply source 48 through the delivery line to the heating fluid ejection section 46. Furthermore, the heating mechanism 44 is not limited to a structure that heats the substrate W using a heating fluid; for example, it can also heat the substrate W using a heater that employs other heating devices such as lamps or lasers positioned above or below the substrate W.

[0061] The shooting device 49 is located in the control unit 93 (see reference). Figure 1 Under the control of the imaging device 49, image data (imaging data) of the upper surface (processing surface) of the substrate W is acquired and sent to the control unit 93. The location of the imaging device 49 is not limited to [specific location]. Figure 2 The example shown allows the imaging device 49 to be positioned and oriented at any location and orientation to capture and acquire image data of a desired portion of the upper surface (particularly the peripheral portion Wp) of the substrate W.

[0062] Figure 4 This is a block diagram illustrating the functional structure of the control unit 93.

[0063] The control unit 93 controls each part of the processing unit 10. The constituent elements of the processing unit 10 controlled by the control unit 93 are not limited, and the control object and control content can be determined according to the processing content.

[0064] In this embodiment, the control unit 93 removes the natural oxide film formed on the peripheral portion Wp of the substrate W, for example... Figure 4 The substrate rotation unit 11, the processing liquid supply unit 12, the heating mechanism 44, and the imaging device 49 are controlled as shown. The specific control functions of the control unit 93 will be described later.

[0065] [Etching Processing Method (Substrate Processing Method)]

[0066] As described above, when the surface film of the peripheral portion Wp of the substrate W is removed by etching, the etching interface sometimes becomes uneven and jagged.

[0067] The inventors of this application have repeatedly conducted research and trial and error on such uneven etched interfaces, and found that there is a tendency for the etched interface to be more uneven as the etch rate increases.

[0068] Figure 5 This is a schematic cross-sectional view illustrating an example of the etching process of the peripheral portion Wp of substrate W.

[0069] Typically, this is achieved by using the process fluid nozzle N (with) Figure 2 and Figure 3The processing liquid L discharged from the nozzles 51, 61, and 71 (as shown) etches away the surface film Ws covering the substrate body Wb, such as silicon (Si). Figure 5 In the example shown, the processing liquid L is discharged from the processing liquid nozzle N, specifically toward the periphery Wp of the substrate W, and the surface film Ws is etched away from the periphery Wp.

[0070] Figure 6 This is an enlarged top view of the peripheral portion Wp of the substrate W, showing the treatment fluid nozzle N discharging the treatment fluid L from the retracted position Q (and...). Figure 3 The retreat positions shown correspond to Q1~Q3) and have just moved to the processing position P (and... Figure 3 This is an example of the state following the processing positions P1~P3 shown. Figure 7 This is an enlarged top view of the peripheral portion Wp of the substrate W, and is a diagram showing an example of the liquid film of the processing liquid L in a state where at least a portion of the substrate body portion Wb is exposed after being removed by etching of the surface film Ws. Figure 8 This is an enlarged top view of the peripheral portion Wp of the substrate W, and is another example of the liquid film of the processing liquid L in a state where at least a portion of the substrate body portion Wb is exposed by etching away the surface film Ws.

[0071] Processing liquid L (especially etching liquid) discharged from the processing liquid nozzle N located at processing position P falls onto the peripheral portion Wp of the rotating substrate W, and expands on the etching area R of the peripheral portion Wp to form a liquid film. The liquid film of processing liquid L gradually etches away the surface film Ws in the etching area R, gradually exposing the main body portion Wb of the substrate.

[0072] Therefore, for example, when the hydrophobic substrate body Wb is covered by a hydrophilic surface film Ws, the etched area R, as etching progresses, changes from a state that is entirely hydrophilic, through a state where hydrophilic and hydrophobic properties coexist, and finally reaches a state that is entirely hydrophobic. On the other hand, when the hydrophilic substrate body Wb is covered by a hydrophobic surface film Ws, the etched area R, as etching progresses, changes from a state that is entirely hydrophobic, through a state where hydrophobic and hydrophilic properties coexist, and finally reaches a state that is entirely hydrophilic.

[0073] As described above, when the substrate body Wb and the surface film Ws have different "affinity to water (hydrophilic / hydrophobic)," during the etching removal process of the surface film Ws, there is a state in which both hydrophobic and hydrophilic regions exist in the peripheral portion Wp of the substrate W.

[0074] On the other hand, just after the processing fluid nozzle N moves from the retracted position Q to the processing position P, such as Figure 6As shown, the liquid film of the processing liquid L on the etched area R is unstable, and the outline of this liquid film (especially the interface (gas-liquid interface) B on the center side of the substrate) sometimes has an irregular serrated shape. Subsequently, over time, the shape of the liquid film of the processing liquid L discharged from the processing liquid nozzle N in the etched area R gradually stabilizes. Ideally, the outline of this liquid film (especially the interface B on the center side of the substrate) has a regular shape (see reference). Figure 7 ).

[0075] However, in reality, even over time, the shape of the liquid film of the processing solution L on the etched area R does not become stable. Sometimes, the contour of the liquid film (especially the interface B on the center side of the substrate) continues to maintain an irregular serrated shape (see reference). Figure 8 In this case, the final etched interface sometimes becomes uneven in shape and appears jagged.

[0076] The inventors of this application conducted further repeated experiments and found that when the shape of the liquid film of the processing liquid L on the etched region R is not sufficiently stabilized, the etch interface becomes uneven and easily becomes jagged when the hydrophilic and hydrophobic surfaces are exposed in the etched region R. In other words, it is known that when the outline of the liquid film of the processing liquid L on the etched region R (especially the interface B on the center side of the substrate) is irregular, the outline of the liquid film tends to maintain an irregular shape when the hydrophilic and hydrophobic surfaces are exposed in the etched region R.

[0077] More specifically, when the substrate body Wb is exposed by etching away the surface film Ws before the contour of the liquid film L (interface B) on the etched region R reaches a desired regular shape, there is a tendency for the etched interface shape to become uneven and jagged. This is believed to be because, in an unstable liquid film state, both areas prone to liquid presence (hydrophilic surface) and areas difficult to contain liquid presence (hydrophobic surface) are generated in the etched region R, thus hindering the stabilization of the liquid film shape and maintaining the unstable state of the liquid film shape during the etching process.

[0078] Based on these insights, the inventors of this application have discovered that etching can effectively avoid uneven shapes at the etched interface by performing etching in the following manner, which is beneficial for achieving an etched interface with a desired regular shape.

[0079] That is, while a liquid film forming solution is supplied to the peripheral portion Wp of the substrate W to form a stable liquid film in the etching region R, an etching solution is supplied to the etching region R to remove the surface film Ws, thereby effectively suppressing the non-uniformity of the etching interface shape. More specifically, before the substrate body portion Wb in the etching region R is exposed, a liquid film of the processing solution L with a regular shape is formed in the etching region R, thereby enabling the etching interface of the etching region R after etching treatment to have a more uniform shape.

[0080] Furthermore, the liquid film forming treatment solution mentioned here is a treatment solution with a lower etching rate than the etching treatment solution for etching the surface film Ws, for example, an etching treatment solution with a lower concentration of etching components than the etching treatment solution for etching the surface film Ws.

[0081] Therefore, as an example, the liquid film forming processing solution can be a processing solution that does not etch the surface film Ws, and the etching rate of the liquid film forming processing solution on the surface film Ws can be substantially "zero (0)". Alternatively, as another example, the liquid film forming processing solution L1 can be a processing solution that etches the surface film Ws, or it can be a liquid formed by mixing a processing solution that etches the surface film Ws and a processing solution that does not etch the surface film Ws. Furthermore, the etching processing solution can be a processing solution that has a temperature on the substrate W that is more suitable for etching the surface film Ws (a temperature for achieving a high etching rate) than the liquid film forming processing solution, for example, it can also be a processing solution that has a higher temperature on the substrate W than the liquid film forming processing solution.

[0082] The following describes a more specific etching process.

[0083] In the various etching modes described below, as an example, a first processing solution that does not etch the surface film Ws (e.g., oxide film) is used by the first processing solution supply unit 50 (see reference 50). Figure 2 and Figure 3 DIW is supplied to the peripheral portion Wp of the substrate W. Additionally, as a second processing solution for etching the surface film Ws, a solution supplied by the second processing solution supply unit 60 (see reference 60) is used. Figure 2 and Figure 3 The drug solution Lc (e.g., hydrofluoric acid) is supplied to the peripheral portion Wp of the substrate W.

[0084] [First Standard Etching Mode]

[0085] Figure 9 This is a diagram illustrating an example of the processing flow for the first standard etching mode.

[0086] Figure 9 The horizontal axis represents the elapsed time (sec.), and the left end of the horizontal axis represents the origin ("0"). Figure 9The vertical axis represents the nozzle position, located to the positive side of the origin (“0”) of the vertical axis. Figure 9 The above-mentioned processing position P exists on the upper side, and on the negative side ( Figure 9 The aforementioned retreat position Q exists on the lower side.

[0087] exist Figure 9 The text describes a case where a liquid, "DIW," is supplied to the peripheral portion Wp of a substrate W, which is essentially unhelpful to the etching process of the surface film Ws on the substrate W, and a "medicinal solution" is supplied to the peripheral portion Wp of the substrate W, which is essentially helpful to the etching process of the surface film Ws on the substrate W. As an example, let's consider... Figure 9 The “DIW” shown is from Figure 2 and Figure 3 The liquid discharged from the "first treatment fluid nozzle 51" shown is... Figure 9 The "medicinal liquid" shown is from Figure 2 and Figure 3 The discharge situation of the "second treatment fluid nozzle 61" shown will be explained.

[0088] but, Figure 9 The diagrams shown related to "DIW" and "chemical solution" are merely one example of a standard etching process; other processes can also be used to perform the first standard etching mode. Alternatively, it can be replaced with... Figure 9 The "DIW" process uses other processing solutions that contribute less to the etching of the surface film Ws than the "chemical solution". For example, the surface film Ws is a material being etched by DIW (e.g., aluminum oxide (AlO)). x germanium oxide (GeO) x In the case of )), it can also be replaced Figure 9 Instead of using a DIW treatment solution that does not etch the material, Figure 9 DIW is used as a treatment solution that does not etch the surface film Ws. For example, isopropanol (IPA) or acetone can sometimes be used.

[0089] Furthermore, the nozzle N for discharging the treatment fluid, which discharges "DIW" and "medicinal solution," is not limited; for example, it can also be from... Figure 2 and Figure 3 The "third processing liquid nozzle 71 (third processing liquid supply unit 70)" shown discharges "medicinal liquid".

[0090] exist Figure 9In the first standard etching mode shown, during standby processing where no processing liquid (DIW and chemical solution) is supplied to the substrate W, the nozzles discharging the chemical solution and DIW (in this example, the first processing liquid nozzle 51 and the second processing liquid nozzle 61) are located in the retracted position Q. On the other hand, in this first standard etching mode, during etching processing of the etching region R (particularly the surface film Ws) of the peripheral portion Wp of the substrate W, the second processing liquid nozzle 61 moves from the retracted position Q to the processing position P. Then, the chemical solution discharged from the second processing liquid nozzle 61 located at the processing position P is supplied to the etching region R to perform etching processing of the surface film Ws in the etching region R. Furthermore, in Figure 9 In the etching process shown, the first processing liquid nozzle 51 is continuously in the retracted position Q, and no DIW is supplied from the first processing liquid nozzle 51 to the substrate W.

[0091] exist Figure 9 In the first standard etching mode, depending on the processing conditions, as described above, etching is performed when the shape of the liquid film of the processing liquid L on the etching region R is not sufficiently stabilized. As a result, the shape of the etching interface sometimes becomes uneven and jagged (see reference). Figure 8 ).

[0092] [First Adjustment Etching Mode]

[0093] Next, the first adjustable etching mode, which is effective in promoting the uniformity of the etched interface shape, will be described.

[0094] Figure 10 This is a diagram illustrating an example of the processing flow for the first adjusted etching mode. Figure 10 The horizontal and vertical axes are the same as those mentioned above. Figure 9 The horizontal and vertical axes are the same, representing elapsed time (sec.) and nozzle position, respectively.

[0095] Figures 11A to 11C This is a conceptual diagram illustrating the processing flow of the first adjustable etching mode.

[0096] In the first adjustable etching mode, while the liquid film of the liquid film forming liquid L1 is stably formed in the desired shape, the etching liquid L2 is supplied to the etching region R of the peripheral portion Wp of the substrate W, thereby etching the surface film Ws of the etching region R.

[0097] That is, control unit 93 (refer to) Figure 1 ) control substrate rotation section 11 and processing fluid supply section 12 (see reference) Figure 2 While rotating the substrate W supported by the holding part 31, liquid film formation and etching processes are performed sequentially.

[0098] In the liquid film formation process, DIW is supplied from the first processing liquid nozzle 51 of the processing liquid supply unit 12 to the peripheral portion Wp of the substrate W (see reference). Figures 11A-11C The figure is denoted by the reference numeral "Ld"; hereinafter also referred to as "DIWLd"). As a result, in the liquid film formation process, a liquid film of DIWLd (i.e., liquid film formation treatment liquid L1) is formed in the etched area R of the peripheral Wp (see Figure 1). Figure 11A ).

[0099] exist Figure 10 In the example shown, after the standby process with the first processing liquid nozzle 51 and the second processing liquid nozzle 61 in the retracted position Q, the first processing liquid nozzle 51, which discharges DIWLd, moves to the processing position P, thereby supplying DIWLd, which functions as a liquid film forming processing liquid L1, to the peripheral portion Wp. As described above, the supply of the chemical solution Lc from the second processing liquid supply unit 60 to the etching region R is stopped, and DIWLd is supplied from the first processing liquid supply unit 50 to the etching region R, thereby performing a liquid film forming process.

[0100] In the subsequent etching process, the chemical solution Lc is supplied from the second chemical solution nozzle 61 of the chemical solution supply unit 12 to the peripheral portion Wp of the substrate W (see reference). Figure 11B A liquid film of the etching solution Lc (i.e., etching treatment solution L2) is formed in the etched area R of the peripheral Wp (refer to...). Figure 11C ).

[0101] Specifically, with the first processing fluid nozzle 51 discharging DIWLd in the processing position P, the second processing fluid nozzle 61 moves from the retracted position Q to the processing position P. Then, with the second processing fluid nozzle 61 discharging drug liquid Lc in the processing position P, the first processing fluid nozzle 51 moves from the processing position P to the retracted position Q.

[0102] Therefore, DIWLd continues to be supplied to the etching region R from the first processing liquid supply unit 50, and the chemical solution Lc is supplied to the etching region R from the second processing liquid supply unit 60. As described above, with a liquid film of DIWLd (liquid film forming processing liquid L1) formed on the etching region R of the peripheral portion Wp of the substrate W, the chemical solution Lc (etching processing liquid L2) is supplied.

[0103] Then, the supply of DIWLd (liquid film forming solution L1) from the first processing solution supply unit 50 to the etching region R is stopped, while the supply of chemical solution Lc (etching processing solution L2) to the etching region R of the peripheral portion Wp of the substrate W is continued.

[0104] Then, after removing the surface film Ws of the etched area R of the substrate W, the second processing liquid nozzle 61 moves from the processing position P to the retraction position Q, stops supplying the liquid Lc to the peripheral Wp, and the etching process ends.

[0105] By starting and executing the etching process according to the above series of procedures, it is possible to suppress the disorder of the liquid film shape in the etched area R, and replace the components of the liquid film from DIWLd (liquid film forming treatment liquid L1) to chemical solution Lc (etching treatment liquid L2).

[0106] Then, the surface film Ws of the etching region R is etched using the liquid film of the thus formed chemical solution Lc. Specifically, in this adjusted etching mode, while maintaining the surface film Ws in the etching region R and without exposing the substrate body Wb, the processing liquid supplied to the etching region R is replaced from DIWLd (liquid film forming processing liquid L1) to chemical solution Lc (etching processing liquid L2). Therefore, it is possible to replace the processing liquid supplied to the etching region R from DIWLd to chemical solution Lc while maintaining a uniform overall affinity (hydrophilicity / hydrophobicity) for water in the etching region R. As a result, chemical solution Lc can be supplied to the etching region R without excessively disturbing the state of the liquid film formed during the liquid film forming process.

[0107] As described above, according to this adjusted etching mode, the etching process can be started and performed while the liquid film of the liquid film forming treatment liquid L1 in the etching region R (especially the interface B on the center side of the substrate) is stably maintained in a regular shape. Therefore, it is possible to effectively prevent the shape of the etching interface from becoming uneven and jagged, and to achieve an etching interface with a contour that is closer to an ideal regular shape.

[0108] [Second Adjustment Etching Mode]

[0109] Next, the second adjustable etching mode, which effectively promotes the uniformity of the etched interface shape, will be explained.

[0110] Figure 12 This is a diagram illustrating an example of the processing flow for the second adjustable etching mode. Figure 12 The horizontal and vertical axes are the same as those mentioned above. Figure 10 The horizontal and vertical axes are the same, representing elapsed time (sec.) and nozzle position, respectively.

[0111] In the second adjustable etching mode, a liquid film of liquid film forming treatment liquid L1 is formed in the etching region R of the peripheral portion Wp by supplying DIWLd and chemical solution Lc to the peripheral portion Wp. That is, in this adjustable etching mode, the liquid film forming treatment liquid L1 includes DIWLd and chemical solution Lc. On the other hand, by continuing to supply chemical solution Lc to the peripheral portion Wp and stopping the supply of DIWLd, etching treatment liquid L2 is supplied to the etching region R.

[0112] In the second adjustable etching mode, the control unit 93 (refer to) Figure 1 ) control substrate rotation section 11 and processing fluid supply section 12 (see reference) Figure 2 While rotating the substrate W supported by the holding part 31, liquid film formation and etching processes are performed as follows.

[0113] That is, the liquid film formation process is performed by supplying DIWLd to the peripheral portion Wp of the substrate W from the first processing liquid nozzle 51 of the processing liquid supply unit 12, and supplying liquid drug Lc to the peripheral portion Wp from the second processing liquid nozzle 61.

[0114] exist Figure 12 In the example shown, DIWLd is first supplied to the peripheral portion Wp, and then liquid solution Lc is supplied to the peripheral portion Wp. That is, the supply of liquid solution Lc from the second processing liquid supply unit 60 to the etching region R is stopped, and DIWLd is supplied to the etching region R from the first processing liquid supply unit 50. Then, DIWLd is supplied to the etching region R from the first processing liquid supply unit 50, and liquid solution Lc is supplied to the etching region R from the second processing liquid supply unit 60, forming a liquid film of liquid film forming processing liquid L1 in the etching region R.

[0115] As described above, in the liquid film formation process, the concentration of the solution Lc is diluted by DIWLd. Therefore, it is possible to effectively prevent the substrate body Wb from being exposed due to the etching of the surface film Ws in the etching area R by the solution Lc supplied to the peripheral part Wp.

[0116] Furthermore, the start time of supplying DIWLd and the start time of supplying the liquid solution Lc in the liquid film formation process are not limited to [specific timing]. Figure 12 The example shown illustrates this. Specifically, in the liquid film formation process, as long as the shape of the liquid film forming solution L1 can be stably formed in the etching region R before the substrate body Wb is exposed, DIWLd and the chemical solution Lc can be supplied to the substrate W at any time. Therefore, the start time of supplying the chemical solution Lc to the peripheral portion Wp can be immediately after the start time of supplying DIWLd to the peripheral portion Wp, or it can be simultaneous with the start time of supplying DIWLd to the peripheral portion Wp.

[0117] Subsequently, as described above, with the liquid film of the liquid film forming processing liquid L1 forming a stable shape in the etching region R, the liquid film forming process ends, while the etching process continues. That is, the supply of DIWLd from the first processing liquid supply unit 50 to the etching region R is stopped, and the supply of chemical liquid Lc from the second processing liquid supply unit 60 to the etching region R continues. More specifically, the first processing liquid nozzle 51 that discharges DIWLd is moved from the processing position P to the retracted position Q, and the second processing liquid nozzle 61 that discharges chemical liquid Lc remains in the processing position P.

[0118] Then, after removing the surface film Ws of the etched area R of the substrate W, the second processing liquid nozzle 61 moves from the processing position P to the retraction position Q, stops supplying the chemical solution Lc to the peripheral part Wp, and the etching process ends.

[0119] By performing the above series of processing steps, the shape disorder of the liquid film in the etched area R can be suppressed, and the components of the liquid film can be replaced from the liquid film forming treatment liquid L1 (a mixture of DIWLd and chemical solution Lc) to the etching treatment liquid L2 (chemical solution Lc).

[0120] As described above, this adjustable etching mode prevents the substrate body Wb from being exposed before a stable liquid film forms in the etching region R by controlling the concentration of the etching component used to etch the surface film Ws of the substrate W. Therefore, in this adjustable etching mode, the etching process can be performed while maintaining a stable shape of the liquid film (particularly the outline of the interface B on the center side of the substrate) of the liquid film forming solution L1 in the etching region R. In particular, in this adjustable etching mode, the etching process to remove the surface film Ws is performed not only after the liquid film formation process but also during the liquid film formation process. Therefore, according to this adjustable etching mode, the overall time from the start of the liquid film formation process to the end of the etching process can be shortened compared to the first adjustable etching mode described above.

[0121] [Second Standard Etching Pattern]

[0122] Figure 13 This is a diagram illustrating an example of the processing flow for the second standard etching mode.

[0123] Figure 13 The horizontal axis represents the elapsed time (sec.). Figure 13 The left vertical axis represents the discharge flow rate of the drug solution Lc from the treatment fluid nozzle N (in this example, the second treatment fluid nozzle 61), i.e., the drug solution flow rate [ml / min.]. Figure 13 The right-hand vertical axis represents the flow rate of the heating fluid used to heat the substrate W supported by the substrate rotation section 11, i.e., "the flow rate of the heating fluid ejection section 46 from the heating fluid supply section 45 (see reference)". Figure 2The flow rate of the inactive gas discharged (heating fluid flow rate [L / min]).

[0124] Figure 13 The second standard etching mode shown is to start the etching process by adjusting the temperature of the substrate W (especially the peripheral Wp) to a temperature suitable for etching the surface film Ws of the substrate W.

[0125] That is, before the etching process of supplying the chemical solution Lc to the substrate W, a preheating process is performed by supplying an inactive gas (heating fluid) to the substrate W to raise the temperature of the substrate W (especially the peripheral part Wp).

[0126] exist Figure 13 In the example shown, after a first preheating process in which a relatively small flow rate of inactive gas is blown from the heating fluid supply unit 45 to the substrate W, a second preheating process is performed in which a relatively large flow rate of inactive gas is blown from the heating fluid supply unit 45 to the substrate W. The second preheating process results in a greater temperature increase of the substrate W per unit time compared to the first preheating process. Furthermore, while the first preheating process may cause a gradual increase in the temperature of the substrate W over time, the temperature of the substrate W may not necessarily increase gradually. For example, the temperature of the substrate W may remain substantially constant for at least a portion of the first preheating process (e.g., the entire period).

[0127] While the substrate W is sufficiently heated through preheating treatment (especially a second preheating treatment), a chemical solution Lc is supplied to the substrate W to perform etching of the surface film Ws. As described above, by increasing the etching rate of the surface film Ws by the chemical solution Lc through preheating treatment, etching is initiated, thereby achieving highly efficient etching. Furthermore, in Figure 13 In the example shown, the second processing liquid nozzle 61 is in the retracted position Q during the "first preheating treatment" and "second preheating treatment", and in the processing position P2 during the "etching treatment".

[0128] exist Figure 13 In the example shown, after the etching process begins, an inactive gas with the same flow rate as the second preheating process is also blown onto the substrate W, and the heating process of the substrate W is carried out simultaneously with the etching process.

[0129] According to the above-described etching mode of this standard, the surface film Ws of the substrate W can be etched efficiently and immediately after the supply of chemical solution Lc to the substrate W begins, thus the time required to expose the substrate body Wb is relatively short. Therefore, under this standard etching mode, compared with the first standard etching mode described above (refer to...), the etching process is more efficient. Figure 9 Similarly, sometimes the substrate body Wb may be exposed when the liquid film shape of the chemical solution Lc on the etched area R is not sufficiently stable, resulting in an uneven etched interface shape that becomes serrated.

[0130] The third adjustable etching mode described below is effective in suppressing the non-uniformity of the etched interface caused by such a second standard etching mode.

[0131] [Third Adjustment Etching Mode]

[0132] Next, a third adjustable etching mode that is effective in promoting the uniformity of the etched interface shape will be explained.

[0133] Figure 14 This is a diagram illustrating an example of the processing flow for the third adjustable etching mode. Figure 14 The horizontal axis, the left vertical axis, and the right vertical axis are related to the above. Figure 13 The horizontal axis, the left vertical axis, and the right vertical axis similarly represent the elapsed time (sec.), the drug flow rate [ml / min.], and the heating fluid flow rate [L / min.], respectively.

[0134] Figures 15A-15C This is a conceptual diagram illustrating the processing flow of the third adjustable etching mode.

[0135] In the third adjustable etching mode, the progress of the etching process is controlled by adjusting the temperature of the substrate W (especially the etched area R of the peripheral Wp), thereby suppressing the etching interface from becoming uneven.

[0136] That is, control unit 93 (refer to) Figure 1 In addition to controlling the substrate rotation section 11 and the processing liquid supply section 12, it also controls the heating fluid supply section 45 (heating mechanism 44; see reference 12). Figure 2 While rotating the substrate W supported by the holding part 31, each process is performed in the following manner.

[0137] During the preheating process, without supplying the chemical solution Lc to the substrate W from the second processing liquid nozzle 61, a relatively small flow rate of inactive gas (heating fluid) is blown from the heating fluid ejection section 46 of the heating fluid supply section 45 to the back surface of the substrate W (see reference). Figure 15A ).

[0138] Subsequently, while an inactive gas is being blown from the heating fluid ejection section 46 to the back side of the substrate W, a chemical solution Lc is supplied from the second processing liquid nozzle 61 to the peripheral portion Wp of the substrate W, while etching and heating processes are performed simultaneously.

[0139] In particular, during the period from when the substrate W is held by the substrate rotation section 11 until a liquid film (especially a liquid film with a stable shape) of the solution Lc is formed in the etching region R, the substrate W is heated by the heating fluid supply section 45 with a first heat (see reference). Figure 15BThen, after a liquid film of the chemical solution Lc (especially a liquid film with a stable shape) is formed in the etching region R, the chemical solution Lc is supplied to the etching region R, and the substrate W is heated by the heating fluid supply section 45 with a second heat greater than the first heat (see reference). Figure 15C More specifically, the control unit 93 controls the heating fluid supply unit 45 such that during the period when the substrate W is heated by the second heat, the flow rate of the inactive gas discharged from the heating fluid supply unit 45 is greater than that during the period when the substrate W is heated by the first heat (see reference). Figure 15B and Figure 15C ).

[0140] Therefore, from the start of supplying the chemical solution Lc to the substrate W until the shape of the liquid film of the chemical solution Lc formed in the etching region R (especially the contour of the interface B on the center side of the substrate) stabilizes, the surface film Ws is etched at a relatively low etching rate. Then, after the shape of the liquid film of the chemical solution Lc formed in the etching region R stabilizes, the surface film Ws is etched at a relatively high etching rate.

[0141] Therefore, by etching the surface film Ws without exposing the substrate body Wb before the liquid film shape of the chemical solution Lc formed in the etching region R stabilizes, it is possible to effectively suppress the stabilization of the liquid film caused by the partial exposure of the substrate body Wb. Moreover, after the liquid film shape of the chemical solution Lc formed in the etching region R stabilizes, the etching of the surface film Ws can be performed efficiently.

[0142] In this adjusted etching mode, the solution Lc supplied to the substrate W functions as the liquid film forming treatment solution described above until the liquid film shape of the solution Lc formed in the etching region R stabilizes. On the other hand, after the liquid film shape of the solution Lc formed in the etching region R stabilizes, the solution Lc supplied to the substrate W functions as the etching treatment solution described above.

[0143] Furthermore, preheating and / or heating treatment using inactive gases (heating fluids) can also be combined with other regulated etching modes (referring to the first and second regulated etching modes) that adjust the start and stop times of supplying the chemical solution Lc and DIWLd to the substrate W. Examples of such combined regulated etching modes are described below.

[0144] [Fourth Adjustment Etching Mode]

[0145] Next, a fourth adjustable etching mode that is effective in promoting the uniformity of the etched interface shape will be explained.

[0146] Figure 16 This is a diagram illustrating an example of the processing flow for the fourth adjustable etching mode. Figure 16The horizontal axis represents the elapsed time (sec.), the left vertical axis represents the flow rate of the drug solution Lc and DIWLd [ml / min.], and the right vertical axis represents the flow rate of the heating fluid [L / min.].

[0147] This regulated etching mode is based on a combination of the following modes: a first regulated etching mode in which etching begins after the liquid film formation process (see reference). Figure 10 ); and a modulated etching mode accompanied by substrate W heating by an inactive gas (heating fluid) (see reference) Figure 14 ).

[0148] That is, in Figure 16 In the adjusted etching mode shown, similar to the first adjusted etching mode described above, after the liquid film formation process using DIWLd from the first processing liquid nozzle 51, an etching process using liquid Lc from the second processing liquid nozzle 61 is performed.

[0149] On the other hand, prior to the liquid film formation process, an inactive gas (heating fluid) is blown from the heating fluid supply section 45 to the back surface of the substrate W via the heating fluid ejection section 46, thereby heating the substrate W. Figure 16 In the example shown, an inert gas with a substantially constant flow rate throughout the process is discharged from the heated fluid ejector 46 and blown toward the substrate W. The process of heating the substrate W using an inert gas is classified as a preheating process before the etching process begins (e.g., during the liquid film formation process) and as a heating process after the etching process begins.

[0150] In this regulated etching mode, the etching solution Lc, which aids in the etching of the surface film Ws, is not supplied to the substrate W before the etching process begins. Therefore, it is essentially unnecessary to suppress the heating of the substrate W used to increase the etching rate. Thus, this regulated etching mode, compared to the third regulated etching mode described above (see...),... Figure 14 Unlike other methods, even before etching, the substrate W can be heated to the same degree as during etching using inactive gases, enabling more efficient etching.

[0151] [Fifth Adjustment Etching Mode]

[0152] Next, the fifth adjustable etching mode, which effectively promotes the uniformity of the etched interface shape, will be explained.

[0153] Figure 17 This is a diagram illustrating an example of the processing flow for the fifth adjustable etching mode. Figure 17 The horizontal axis, the left vertical axis, and the right vertical axis are related to the above. Figure 16 Similarly, the elapsed time (sec.), the flow rates of the drug solution Lc and DIWLd [ml / min.], and the flow rate of the heating fluid [L / min.] are expressed respectively.

[0154] This regulated etching mode is based on a combination of the following modes: a second regulated etching mode that initiates the etching process during the liquid film formation process (see reference). Figure 12 ); and a modulated etching mode accompanied by substrate W heating by an inactive gas (heating fluid) (see reference) Figure 14 ).

[0155] That is, in Figure 17 In the fifth adjustable etching mode shown, similar to the second adjustable etching mode described above, DIWLd from the first processing liquid nozzle 51 and chemical solution Lc from the second processing liquid nozzle 61 are supplied to the peripheral portion Wp of the substrate W to perform liquid film formation processing. That is, DIWLd and chemical solution Lc are used as the liquid film forming processing liquid L1, and a liquid film of DIWLd and chemical solution Lc (liquid film forming processing liquid L1) is stably formed in the etching region R. Furthermore, in Figure 17 In the example shown, compared with the above Figure 12 The example shown is different; in the liquid film formation process, the supply of DIWLd to the peripheral Wp and the supply of the drug solution Lc are started simultaneously.

[0156] Subsequently, in this adjusted etching mode, similar to the second adjusted etching mode described above, once a liquid film of the liquid film forming solution L1 has been stably formed in the etching region R, the supply of DIWLd to the etching region R is stopped, and the liquid film forming process ends. On the other hand, the supply of chemical solution Lc to the etching region R continues, and the etching process continues even after the liquid film forming process has ended.

[0157] On the other hand, before the liquid film formation process and the etching process, an inactive gas (heating fluid) is blown from the heating fluid ejection section 46 of the heating fluid supply section 45 onto the back side of the substrate W to raise the temperature of the substrate W. However, in this adjustable etching mode, the surface film Ws is also etched during the liquid film formation process, thus differing from the third adjustable etching mode described above (see...). Figure 14 Similarly, the flow rate of inactive gas can be suppressed before the liquid film shape of the processing liquid L1 used for liquid film formation on the etched region R stabilizes.

[0158] That is, before the liquid film shape of the liquid film forming processing liquid L1 formed in the etching region R of the substrate W stabilizes (i.e., before the liquid film forming process ends), a relatively small flow rate of inactive gas is supplied to the substrate W from the heated fluid ejection section 46 to suppress the increase in etching rate. Then, after the liquid film shape of the liquid film forming processing liquid L1 formed in the etching region R stabilizes (i.e., after the liquid film forming process ends), a relatively large flow rate of inactive gas is supplied to the substrate W from the heated fluid ejection section 46 to promote the increase in etching rate.

[0159] Therefore, by etching the surface film Ws without exposing the substrate body Wb before the liquid film shape of the liquid film forming solution L1 formed in the etching region R stabilizes, it is possible to effectively suppress the stabilization of the liquid film caused by the partial exposure of the substrate body Wb. Moreover, after the shape of the liquid film formed in the etching region R by the solution Lc stabilizes, the etching of the surface film Ws can be performed efficiently.

[0160] [Etching Pattern Determination Method]

[0161] As described above, even when the etched interface becomes uneven under standard etching modes (first standard etching mode and second standard etching mode), the unevenness of the etched interface shape can be effectively suppressed by adjusting the etched mode (first to fifth adjusted etched modes).

[0162] However, in reality, whether a uniform etch interface can be achieved is determined by various etching-related conditions, and therefore cannot be easily predicted in advance. For example, for substrates W with the same specifications, even if a batch of substrates can achieve a uniform etch interface using a standard etching pattern, other batches of substrates may have uneven etch interfaces due to the same standard etching pattern.

[0163] Therefore, the etching mode of the substrate W to be processed can also be adaptively determined using the following etching mode determination method. For example, by using the following etching mode determination method to determine the appropriate etching mode using substrate W representing multiple substrates W as processing objects, the processing of other substrates W can be performed according to the appropriate etching mode determined in this way.

[0164] Figure 18 This is a schematic top view of a substrate W in which etching solution L2 (e.g., chemical solution Lc) is supplied from the processing solution nozzle N to the peripheral portion Wp. Figure 19A It is Figure 18 The enlarged top view of the area indicated by the reference numeral "XIXA" in the accompanying drawings shows, in particular, an example of the hydrophilic surface properties of the peripheral portion Wp of the substrate W to which the etching solution L2 is supplied. Figure 19B It is Figure 18 The attached figure shows an enlarged top view of the area indicated by the reference numeral "XIXA", in particular an example of the hydrophobic surface properties of the peripheral portion Wp of the substrate W to which the etching solution L2 is supplied.

[0165] also, Figures 18-19B The notch (cutout) in the substrate W shown is indicated by the reference numeral "n". From Figures 18-19B The position of the gap n in the middle can also be known. Figure 18 Compared to Figure 19A and Figure 19B They don't correspond in terms of time.

[0166] like Figures 18-19B As shown, the etching solution L2, discharged from the nozzle N and supplied to the peripheral portion Wp of the substrate W, exhibits different operating modes depending on the surface characteristics (especially hydrophilicity / hydrophobicity) of the peripheral portion Wp. That is, when the peripheral portion Wp has hydrophilic surface characteristics (see...), the etching solution L2 operates differently. Figure 19A The etching solution L2 wets and spreads on the peripheral portion Wp, showing a tendency to be almost unrepelled by it. On the other hand, when the peripheral portion Wp has hydrophobic surface properties (see...). Figure 19B There is a tendency for at least a portion of the etching solution L2 to be repelled by the peripheral portion Wp and to disperse outward from the peripheral portion Wp as a mist-like detachment solution Lr.

[0167] The etching solution L2 supplied to the peripheral portion Wp of the substrate W in the manner described above exhibits different operating modes depending on the surface characteristics of the peripheral portion Wp (especially hydrophilicity / hydrophobicity), thus allowing the selection of an appropriate etching mode based on the operating mode.

[0168] Figure 20 This is a flowchart illustrating an example of an etching mode determination method.

[0169] The following explanation Figure 20 The etching mode determination method is achieved through the control unit 93 (see reference). Figure 1 The various devices constituting the substrate processing system 80 (processing unit 10) are appropriately controlled to perform the operation.

[0170] That is, under the control of the control unit 93, while the substrate W is rotated by the substrate rotation unit 11, the etching processing liquid L2 (e.g., chemical liquid Lc) is supplied from the processing liquid supply unit 12 to the etching area R of the peripheral portion Wp of the substrate W.

[0171] Then, the control unit 93 acquires data from the imaging device 49 (referencing a specific observation time range) during the period when the etching solution L2 is supplied to the etching area R (particularly within a certain observation time range). Figure 2 The image data obtained by photographing the peripheral Wp and its vicinity ( Figure 20 S1). The acquired imaging data includes images (still images and / or moving images) showing the state and operation of the etching treatment fluid L2 in the peripheral Wp and its vicinity.

[0172] Furthermore, the aforementioned "observation time range" includes the time from the start of supplying etching processing liquid L2 from the processing liquid supply unit 12 to the etching area R until a liquid film of etching processing liquid L2 is formed in the etching area R in a stable shape, i.e., the "liquid film formation time".

[0173] Then, the control unit 93 analyzes the imaging data (S2), and based on the imaging data, detects whether there is a change in the surface state of the peripheral portion Wp (especially the etched area R) of the substrate W within the observation time range. Generally, whether there is a change in the surface state of the peripheral portion Wp reflects whether there is a change in the state of the liquid film of the peripheral portion Wp. Therefore, based on the imaging data, the control unit 93 determines whether there is a change in the state of the liquid film of the etching treatment liquid L2 of the peripheral portion Wp within the observation time range (S3). For example, in the detachment liquid Lr (refer to...) Figure 19B If the observed state changes to an unobserved state, or if the detached liquid Lr changes from an unobserved state to an observed state, it can also be concluded that the state of the liquid film (and consequently the surface state of the peripheral Wp) has changed.

[0174] Based on the detection results of whether there is a change in the surface state of the substrate W, the control unit 93 decides whether to execute the adjustment etching mode. That is, if it is determined that the liquid film state of the etching treatment liquid L2 in the peripheral part Wp (and thus the surface state of the peripheral part Wp) has not changed (S3 no), the control unit 93 selects the standard etching mode and decides not to execute the adjustment etching mode (S6).

[0175] On the other hand, if it is determined that the liquid film state of the etching treatment liquid L2 in the peripheral portion Wp (and thus the surface state of the peripheral portion Wp) has changed (S3 "Yes"), the control unit 93 determines whether the change in the state of the liquid film occurred before the formation of a uniform liquid film with a stable shape (S4). If the change in the state of the liquid film occurred after the liquid film has a stable shape (S4 "No"), the control unit 93 selects the standard etching mode and decides not to execute the adjustment etching mode (S6). On the other hand, if the change in the state of the liquid film occurred before the liquid film has a stable shape (S4 "Yes"), the control unit 93 selects the adjustment etching mode instead of the standard etching mode and decides to execute the adjustment etching mode (S5).

[0176] Furthermore, whether the etching solution L2 film in the peripheral portion Wp is a uniform liquid film with a stable shape can be determined, for example, by analyzing image data through the control unit 93 to obtain the state of the etching solution L2 film on the peripheral portion Wp. Additionally, there is no limitation on the specific method related to determining whether the liquid film is uniform. For example, if the shape of the outline of the liquid film on the peripheral portion Wp (e.g., the outline of the interface B on the center side of the substrate) does not change within a specified time period, or if the change rate of the shape is below a threshold for a specified time or more, the liquid film can be considered a uniform liquid film with a stable shape.

[0177] As described above, when the control unit 93 detects a change in the surface state of the peripheral portion Wp of the substrate W, it can obtain the moment when the liquid film of the etching solution L2 forms in a stable shape in the etching region R, i.e., the liquid film formation moment, by analyzing the captured data. Then, based on the moment when the surface state of the peripheral portion Wp of the substrate W changes and the liquid film formation moment, the control unit 93 determines whether to execute an adjusted etching mode. That is, when the moment when the surface state of the peripheral portion Wp changes is before the liquid film formation moment, the adjusted etching mode is executed instead of the standard etching mode. On the other hand, when the moment when the surface state of the peripheral portion Wp changes is after the liquid film formation moment, the standard etching mode is executed instead of the adjusted etching mode.

[0178] In addition, as Figure 20 As a result of the processing flow, when selecting to execute an adjustable etching mode, the control unit 93 can also select the optimal adjustable etching mode from multiple adjustable etching modes (refer to the first to fifth adjustable etching modes described above). This selection of the optimal adjustable etching mode can be based on various processing conditions, such as the liquid film formation time. As mentioned above, the "liquid film formation time" is the time from the start of supplying etching processing liquid L2 from the processing liquid supply unit 12 to the etching region R until a liquid film of processing liquid L2 forms in the etching region R with a stable shape, and can be obtained by the control unit 93 analyzing image data.

[0179] For example, when the liquid film formation time is relatively short (e.g., "liquid film formation time ≤ 1 second"), an adjustable etching mode (e.g., the first or fourth adjustable etching mode described above) can be selected to perform the etching process after the liquid film formation process. On the other hand, when the liquid film formation time is relatively long (e.g., "liquid film formation time > 1 second"), an adjustable etching mode (e.g., the second, third, or fifth adjustable etching mode described above) can also be selected to start the etching process during the liquid film formation process.

[0180] Furthermore, the embodiments and modifications disclosed in this specification are merely illustrative in all respects and are not intended to be limiting. The above-described embodiments and modifications can be omitted, substituted, and changed in various ways without departing from the appended technical solutions and their spirit. For example, the above-described embodiments and modifications can be combined in whole or in part; additionally, embodiments other than those described above can be combined with the above-described embodiments or modifications. Furthermore, the effects of the present invention described in this specification are merely illustrative and may also bring other effects.

[0181] There are no restrictions on the specific technical categories for implementing the above-described technical ideas. For example, the above-described technical ideas can also be implemented by a computer program that enables a computer to execute one or more steps (steps) included in the method of manufacturing or using the above-described apparatus. Alternatively, the above-described technical ideas can also be implemented by a computer-readable, non-transitory recording medium on which such a computer program is recorded.

Claims

1. A substrate processing apparatus characterized by comprising: Comprising: a substrate rotation section that holds and rotates a substrate; a processing liquid supply section that supplies a processing liquid to a peripheral edge portion of the substrate; and a control section that controls the substrate rotation section and the processing liquid supply section, the control section controls the substrate rotation section and the processing liquid supply section in a conditioning etching mode in which a liquid film forming processing liquid is supplied from the processing liquid supply section to the peripheral edge portion while rotating the substrate to form a liquid film on an etching region of the peripheral edge portion, and then an etching processing liquid is supplied to the etching region while the liquid film is formed to etch a surface film of the etching region.

2. The substrate processing apparatus according to claim 1, wherein the liquid film forming processing liquid is an etching processing liquid in which a concentration of an etching component that etches the surface film is lower than that of the etching processing liquid.

3. The substrate processing apparatus according to claim 2, wherein the liquid film forming processing liquid is a liquid in which a processing liquid that etches the surface film and a processing liquid that does not etch the surface film are mixed.

4. The substrate processing apparatus according to claim 1, wherein the liquid film forming processing liquid is a processing liquid that does not etch the surface film.

5. The substrate processing apparatus according to claim 1, wherein the processing liquid supply section includes: a first processing liquid supply section that supplies a first processing liquid that does not etch the surface film to the peripheral edge portion; and a second processing liquid supply section that supplies a second processing liquid that etches the surface film to the peripheral edge portion, the control section controls the substrate rotation section and the processing liquid supply section so that the following processes are performed while rotating the substrate: the supply of the second processing liquid from the second processing liquid supply section to the etching region is stopped, and the first processing liquid is supplied from the first processing liquid supply section to the etching region; then, the supply of the first processing liquid from the first processing liquid supply section to the etching region is continued, and the second processing liquid is supplied from the second processing liquid supply section to the etching region; then, the supply of the first processing liquid from the first processing liquid supply section to the etching region is stopped, and the supply of the second processing liquid from the second processing liquid supply section to the etching region is continued.

6. The substrate processing apparatus according to claim 5, wherein the control section performs the following processes while rotating the substrate: the supply of the second processing liquid from the second processing liquid supply section to the etching region is stopped, and the first processing liquid is supplied from the first processing liquid supply section to the etching region; then, the supply of the first processing liquid from the first processing liquid supply section to the etching region is continued, and the second processing liquid is supplied from the second processing liquid supply section to the etching region to form the liquid film; then, the supply of the first processing liquid from the first processing liquid supply section to the etching region is stopped, and the supply of the second processing liquid from the second processing liquid supply section to the etching region is continued. ​ 7. The substrate processing apparatus according to claim 1, characterized in that: a heating mechanism that heats the substrate is included and is controlled by the control section, the control section controls the heating mechanism so that, during a period from when the substrate is held by the substrate holding section to when the liquid film is formed on the etching region, the substrate is heated by the heating mechanism at a first amount of heat, and thereafter, the etching processing liquid is supplied to the etching region, and the substrate is heated by the heating mechanism at a second amount of heat that is greater than the first amount of heat.

8. The substrate processing apparatus according to claim 7, characterized in that: the heating mechanism has a heating fluid supply section that discharges a heating fluid that is heated by a heater, and the substrate is heated using the heating fluid that is discharged from the heating fluid supply section, the control section controls the heating fluid supply section so that, during a period when the substrate is heated at the second amount of heat, a flow rate of the heating fluid that is discharged from the heating fluid supply section is greater than during a period when the substrate is heated at the first amount of heat.

9. The substrate processing apparatus according to claim 1, characterized in that: a photographing device that photographs the substrate held by the substrate holding section is included, the control section performs processing that: supplies the etching processing liquid to the etching region while rotating the substrate, acquires photographing data that is obtained by photographing the peripheral edge portion by the photographing device during a period when the etching processing liquid is supplied to the etching region, detects whether or not there is a change in the surface state of the substrate based on the photographing data, and decides whether or not to perform the adjustment etching mode based on a result of the detection of whether or not there is a change in the surface state of the substrate.

10. The substrate processing apparatus according to claim 9, characterized in that: the control section performs processing that: in a case where it is detected that there is a change in the surface state of the substrate, acquires a liquid film formation timing at which the liquid film is formed on the etching region by analyzing the photographing data, and decides whether or not to perform the adjustment etching mode based on the timing at which there is a change in the surface state of the substrate and the liquid film formation timing.

11. A substrate processing method, characterized by: processing a substrate in an adjustment etching mode, the adjustment etching mode including: a step of forming a liquid film on an etching region of a peripheral edge portion by supplying a liquid film formation processing liquid to the peripheral edge portion while rotating the substrate, and a step of etching a surface film of the etching region by supplying an etching processing liquid to the etching region in a state where the liquid film is formed.

12. The substrate processing method according to claim 11, characterized in that: the liquid film formation processing liquid is an etching processing liquid in which a concentration of an etching component that etches the surface film is lower than in the etching processing liquid.

13. The substrate processing method according to claim 12, characterized in that: the liquid film formation processing liquid is a liquid in which an etching processing liquid that etches the surface film and a processing liquid that does not etch the surface film are mixed.

14. The substrate processing method according to claim 11, characterized in that: ​ ​ ​ The treatment liquid for forming the liquid film is a treatment liquid that does not etch the surface film.

15. The substrate processing method according to claim 11, wherein: the steps of: stopping the supply of the second treatment liquid to the etching region and supplying the first treatment liquid to the etching region; after that, continuing the supply of the first treatment liquid to the etching region and supplying the second treatment liquid to the etching region; after that, stopping the supply of the first treatment liquid to the etching region and continuing the supply of the second treatment liquid to the etching region.

16. The substrate processing method according to claim 15, wherein: the steps of: stopping the supply of the second treatment liquid to the etching region and supplying the first treatment liquid to the etching region; after that, continuing the supply of the first treatment liquid to the etching region and supplying the second treatment liquid to the etching region to form the liquid film; after that, stopping the supply of the first treatment liquid to the etching region and continuing the supply of the second treatment liquid to the etching region.

17. The method for processing a substrate as set forth in claim 11, wherein including: the step of heating the substrate with a first heat amount until the liquid film is formed in the etching region; and the step of supplying the etching treatment liquid to the etching region and heating the substrate with a second heat amount that is greater than the first heat amount. including:

18. The method for processing a substrate as set forth in claim 17, wherein the substrate is capable of being heated using heating fluid discharged from a heating fluid supply section, the flow rate of the heating fluid discharged from the heating fluid supply section is greater during the heating of the substrate with the second heat amount than during the heating of the substrate with the first heat amount. including:

19. The method for processing a substrate as set forth in claim 11, wherein the step of supplying the etching treatment liquid to the etching region while rotating the substrate; the step of the imaging device acquiring imaging data of the peripheral portion during the supply of the etching treatment liquid to the etching region; the step of detecting whether or not there is a change in the surface state of the substrate based on the imaging data; and the step of deciding whether or not to perform the adjustment of the etching mode based on the detection result of whether or not there is a change in the surface state of the substrate.

20. The substrate processing method according to claim 19, wherein: in a case where it is detected that there is a change in the surface state of the substrate, the imaging data is analyzed to acquire a liquid film formation timing at which the liquid film is formed in the etching region, and based on the timing at which there is a change in the surface state of the substrate and the liquid film formation timing, it is decided whether or not to perform the adjustment of the etching mode. ​

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