Hole sealing agent, preparation method thereof and coating hole sealing treatment method of semiconductor part

Abstract

The invention discloses a hole sealing agent, a preparation method of the hole sealing agent and a coating hole sealing treatment method of a semiconductor part. The hole sealing agent comprises rare earth metal oxide nanoparticles, a coalescing agent and an organic polar solvent, wherein the coalescing agent can be dissolved in the organic polar solvent. According to the hole sealing agent, the rare earth metal oxide nanoparticles which are consistent with or similar to a coating material in property are adopted as a hole sealing medium, hole sealing and curing are not prone to shrinkage, the formed coating is good in heat resistance and not prone to embrittlement and cracking, and corrosion resistance, compactness and temperature resistance are all greatly improved.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of surface engineering, and relates to a post-processing technology of thermal spraying coating, in particular to a sealing agent, a preparation method thereof and a coating sealing treatment method of semiconductor parts. BACKGROUND

[0002] Thermal spraying coating technology is widely used in industrial fields to improve the wear resistance, corrosion resistance and high temperature resistance of base materials. The preparation of thermal spraying coating is a method of using a heat source to heat the spraying material to a molten or semi-molten state, and spraying and depositing it at a certain speed to the surface of the pretreated substrate to form a coating, with the purpose of giving the substrate surface special functions. Taking the spraying processes of common high-velocity oxygen fuel (HVOF) spraying method and atmospheric plasma spraying (APS) method as examples, the formed coating is a layered accumulation structure formed by countless deformed particles interlaced and stacked together in a wave-like manner, so there are some pores between the deformed particles in the coating. These pores provide penetration channels for corrosive media (such as moisture, oxygen, acidic or alkaline gases, etc.), making the surface of the protected substrate material susceptible to chemical or electrochemical corrosion. These corrosion effects can cause the physical properties of the coating to decrease, resulting in cracking and peeling, and long-term corrosion can eventually lead to the overall failure of the coating and loss of the function of protecting the substrate.

[0003] Therefore, a sealing agent is usually used to seal the pores of the coating to reduce the porosity of the coating and enhance its ability to resist corrosion medium erosion. Sealing treatment refers to using a brush or a spraying device to immerse the sealing agent into the pores and fill them, strengthening the inside while making the surface smooth.

[0004] However, the sealing agents on the market currently have the following technical problems:

[0005] 1) Insufficient sealing depth: existing sealing agents mainly cover the surface of the coating, making it difficult to achieve deep sealing.

[0006] 2) Solidification shrinkage problem: the sealing agent may shrink during solidification, resulting in reduced sealing density.

[0007] 3) Embrittlement and bonding problem: the solidified sealing medium is prone to embrittlement, and has poor bonding with the thermal spraying coating.

[0008] 4) Limited high temperature resistance: the temperature resistance of organic sealing agents is usually below 300℃, and the temperature resistance of inorganic sealing agents is usually below 500℃, limiting their application in high temperature environments.

[0009] Therefore, there is an urgent need to develop a new sealing agent to effectively reduce the porosity of the coating and improve the density and corrosion resistance of the coating. SUMMARY

[0010] The present application aims to provide a new sealing agent and its application method to solve the deficiencies of the existing sealing agent, improve the compactness and corrosion resistance of the coating, prolong the service life of the coating and enhance its performance in harsh environments.

[0011] To achieve the above-mentioned purpose, the present application provides a sealing agent, comprising: rare earth metal oxide nanoparticles, a film-forming aid and an organic polar solvent, wherein the film-forming aid can be dissolved in the organic polar solvent.

[0012] Optionally, the particle size of the rare earth metal oxide nanoparticles is not greater than 5nm.

[0013] Optionally, the rare earth metal elements in the rare earth metal oxide nanoparticles are selected from at least one or a combination of two or more of Y (yttrium), Ho (holmium), Er (erbium), Tm (thulium), Yb (ytterbium) and Lu (lutetium).

[0014] Optionally, the film-forming aid comprises at least one of PVDF (Polyvinylidene Fluoride), PTFE (Polytetrafluoroethylene), ETFE (Ethylene Tetrafluoroethylene), PVDF-HFP (Polyvinylidene Fluoride-Hexafluoropropylene), PI (Polyimide), PEEK (Polyether Ether Ketone) and PPS (Polyphenylene Sulfide).

[0015] Optionally, the organic polar solvent comprises at least one of DMF (Dimethylformamide), NMP (N-Methyl-2-pyrrolidone), DMA (Dimethyl Acetamide) and DMSO (Dimethyl Sulfoxide).

[0016] The present application also provides a preparation method of the above-mentioned sealing agent, comprising:

[0017] dissolving step: dissolving the film-forming aid in the organic polar solvent to form a film-forming aid solution;

[0018] dispersing step: dispersing the rare earth metal oxide nanoparticles in the film-forming aid solution to form the sealing agent.

[0019] Optionally, the film forming aid and the organic polar solvent are used in a mass ratio of 0.3% to 1%.

[0020] Optionally, the mass ratio of the rare earth metal oxide nanoparticles to the film forming aid solution is 0.1% to 0.5%.

[0021] Optionally, the dissolving step and / or the dispersing step further comprises ultrasonic treatment.

[0022] Optionally, in the dissolving step, the ultrasonic treatment has an ultrasonic power of 300W to 500W and an ultrasonic time of 0.5h to 1h.

[0023] Optionally, in the dispersing step, the ultrasonic treatment has an ultrasonic power of 100W to 200W and an ultrasonic time of 0.5h to 1h.

[0024] The present application also provides a coating sealing treatment method for a semiconductor component, comprising:

[0025] providing a semiconductor component body having a coating layer with a porosity greater than 0 on its surface;

[0026] providing a sealing agent as described above;

[0027] applying the sealing agent to the semiconductor component body so that the sealing agent completely covers the coating layer of the semiconductor component body;

[0028] removing the organic polar solvent so that the rare earth metal oxide nanoparticles solidify and seal in the pores of the coating layer.

[0029] Optionally, the coating layer comprises a rare earth metal oxide.

[0030] Optionally, in the sealing agent, the rare earth metal oxide nanoparticles are the same as the rare earth metal oxide material of the coating layer.

[0031] Optionally, the applying of the sealing agent to the semiconductor component body comprises immersing the semiconductor component body in the sealing agent so that the sealing agent uniformly penetrates into the pores of the coating layer.

[0032] Optionally, the immersion time is 5h to 10h.

[0033] Optionally, the applying of the sealing agent to the semiconductor component body comprises coating the sealing agent on the coating layer.

[0034] Optionally, the temperature for removing the organic polar solvent is less than 100℃.

[0035] Optionally, the removing the organic polar solvent refers to air-drying treatment at 70-80 DEG C.

[0036] Optionally, the semiconductor component comprises a plasma confinement ring and / or a middle ground ring.

[0037] Compared with the prior art, the technical scheme of the present application has at least the following beneficial effects:

[0038] The pore sealing agent comprises rare earth metal oxide nanoparticles, a film forming aid and an organic polar solvent. The rare earth metal oxide nanoparticles are consistent with the coating material or similar, and have a consistent thermal expansion coefficient, which will not cause solidification shrinkage problems, and after filling the pores of the coating, an integrated coating is formed, and filling scar defects will not occur. The film forming aid can be dissolved in the organic polar solvent, and the film forming aid solution formed can uniformly disperse the rare earth metal oxide nanoparticles to form a stable colloidal solution, which is not prone to solid particle agglomeration. Not only can it penetrate deeply into the interior of the coating to achieve deep sealing, but also can achieve uniform filling and sealing to form an integrated coating. The film forming aid has a certain viscosity, which is conducive to the close combination of the rare earth metal oxide nanoparticles and the coating material. After the organic solvent is removed, the metal oxide nanoparticles are solidified and bonded to the coating, and are not prone to cracking and falling off.

[0039] After the coating of the semiconductor component is treated by the pore sealing agent of the present application, the surface of the coating is smooth, the porosity can be reduced to infinitely close to 0, the corrosion resistance and temperature resistance are greatly improved, thereby the service life of the semiconductor component can be prolonged, and the production cost can be reduced. BRIEF DESCRIPTION OF DRAWINGS

[0040] Figure 1 The flow chart of the preparation method of the pore sealing agent of the present application.

[0041] Figure 2 The flow chart of the coating pore sealing treatment method of the semiconductor component of the present application.

[0042] Figure 3 The local cross-sectional schematic diagram of the semiconductor component before and after the coating pore sealing treatment method of the semiconductor component of the present application; wherein a represents before the pore sealing treatment, and b represents after the pore sealing treatment.

[0043] Figure 4 The photograph comparison diagram of the comparative example and examples 1-2 after the corrosion working environment; wherein a represents before the pore sealing treatment, b represents after the pore sealing treatment of example 1, and c represents after the pore sealing treatment of example 2.

[0044] Figure 5The scanning electron microscope contrast chart of the coating of the semiconductor component in embodiment 1 of the present application before and after the sealing treatment; wherein a represents before the sealing treatment, and b represents after the sealing treatment. DETAILED DESCRIPTION

[0045] The technical solutions of the present application will be described clearly and completely below in combination with the drawings. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0046] In the description of the present application, it should be noted that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third" are only for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0047] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected; it can be directly connected, or indirectly connected through an intermediate medium; it can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0048] As described in the background, the sealing agent should have low viscosity and good penetration performance, be able to deeply fill the pores in the deep part of the coating, be easy to solidify, after film solidification, be able to bond closely with the coating, and be able to resist high temperature and corrosion. The sealing agent for the coating of the semiconductor device also needs to have excellent electrical insulation, chemical stability, thermal stability and good sealing performance, in order to ensure the reliability and long-term stability of the device. The sealing agent materials commonly used for the coating of the semiconductor device include: epoxy resin, silicone resin, polyurethane resin and other materials. These sealing agents have insufficient temperature resistance and usually need to add a curing agent, and after curing, they are prone to shrinkage, embrittlement and other problems, affecting the porosity of the coating, and it is difficult to reduce the porosity to close to 0, which cannot meet the increasingly developing process requirements.

[0049] To this end, the present application proposes an improved hole sealing agent, which uses rare earth metal oxide nanoparticles with a size comparable to the coating material as a hole sealing medium, which is dispersed in a selected film-forming aid solution. The dispersion system formed thereby is stable and not prone to aggregation, and can penetrate deeply into the coating and fully fill and seal the pores of the coating. Since the expansion coefficient and heat resistance of the hole sealing medium are comparable to those of the coating material, no additional curing agent needs to be added when the solvent is removed and the film is solidified, and no solidification shrinkage or embrittlement will occur. The selected film-forming aid has a certain viscosity, and after uniform dispersion of the nanoscale hole sealing medium, it can uniformly wrap the hole sealing medium, thereby preventing the aggregation of the hole sealing medium. When the hole sealing agent is used to fill the pores of the coating and solidify the film, the hole sealing medium can be tightly bonded in the coating with the assistance of the film-forming aid, with strong bonding and low likelihood of falling off. The following will be described in detail.

[0050] The improved hole sealing agent of the present application comprises rare earth metal oxide nanoparticles, a film-forming aid, and an organic polar solvent.

[0051] The rare earth metal oxide nanoparticles serve as a hole sealing medium, and the material thereof is selected according to the material of the coating that needs to be sealed, and the two materials are the same or similar, with comparable expansion coefficients and heat resistance. Since the hole sealing medium is consistent or similar to the coating material, solidification shrinkage will not occur during the hole sealing and solidification process, and the porosity of the coating can be reduced to infinitely close to 0; after hole sealing and solidification, the formed coating is integrated, with good bonding and low likelihood of falling off or cracking. Moreover, the hole sealing medium is an inorganic material with good temperature resistance. In addition, in the hole sealing agent of the present application, the rare earth metal oxide nanoparticles also function as a curing agent, so that the hole sealing agent of the present application does not need to add an additional curing agent, and will not introduce other impurities. As an example, the rare earth metal elements in the rare earth metal oxide nanoparticles are selected from at least one or a combination of two or more of Y, Ho, Er, Tm, Yb, and Lu.

[0052] The film-forming aid can be dissolved in the organic polar solvent to form a film-forming aid solution, which can uniformly disperse the rare earth metal oxide nanoparticles. The inventors have unexpectedly found that nanoparticles with a very small particle size are conducive to the dispersion of the rare earth metal oxide nanoparticles in the film-forming aid solution, forming a stable colloidal solution. Since the particle size of the solid particles is very small, Brownian motion can prevent them from aggregating and settling, and the colloidal solution can remain stable for a long time without the phenomenon of solid particle aggregation and settling. Therefore, the hole sealing agent of the present application not only penetrates deeply into the interior of the coating to achieve deep hole sealing, but also uniformly and continuously fills the holes, enhancing the uniformity and continuity of the coating and forming an integrated coating. Since the internal structure of the coating is uniform, the risk of embrittlement is reduced. As an example, the particle size of the rare earth metal oxide nanoparticles is not greater than 5 nm.

[0053] The film forming aid has certain viscosity, which is conducive to the close combination of the rare earth metal oxide nanoparticles and the coating material. After the organic polar solvent is removed, the metal oxide nanoparticles are solidified and bonded to the coating, and are not easy to fall off. As an example, the film forming aid comprises at least one of PVDF, PTFE, ETFE, PVDF-HFP, PI, PEEK and PPS.

[0054] The organic polar solvent needs to be conducive to the dissolution of the film forming aid and the dispersion of the sealing medium according to the materials of the film forming aid and the sealing medium. The organic polar solvent generally has polarity, can be water-miscible, has a high boiling point and good solubility. As an example, at least one of DMF, NMP, DMA and DMSO can be selected.

[0055] The flowability and concentration of the sealing agent affect the uniformity and film thickness of the sealing solidified film. A proper sealing agent concentration can form a smooth and uniform sealing layer, improving the overall quality of the coating. The mass ratio of the film forming aid to the organic polar solvent is 0.3% to 1%. The film forming aid solution formed has moderate viscosity and can uniformly disperse the sealing medium. The sealing agent formed can fully penetrate into the small pores of the coating through capillary action. The mass ratio of the rare earth metal oxide nanoparticles to the film forming aid solution is 0.1% to 0.5%. The film forming aid in the sealing agent can fully coat the ultra-small particle size rare earth metal oxide nanoparticles, which is conducive to the close bonding of the sealing medium and the coating, prevents the nanoparticles from agglomerating, and helps to improve the stability of the sealing agent. The rare earth metal oxide nanoparticles coated by the film forming aid can synergistically enhance the permeability of the sealing agent.

[0056] After the sealing agent of the present application is applied to the coating that needs to be modified, the sealing agent fully penetrates and fills the pores in the coating, and then the organic polar solvent is removed to achieve solidification. At this time, the rare earth metal oxide nanoparticles wrapped by the film forming aid are closely bonded in the coating, achieving the solidification effect. The present application can remove the organic polar solvent at normal temperature and pressure to achieve solidification, but the present application is not limited thereto. The present application can also be heated and pressurized as needed to shorten the solidification time.

[0057] As shown in Figure 1 The preparation method of the sealing agent of the present application comprises:

[0058] Step S11, dissolving step: dissolving the film forming aid in the organic polar solvent to form a film forming aid solution;

[0059] Step S12, dispersion step: dispersing the rare earth metal oxide nanoparticles in the film forming aid solution to form the sealing agent.

[0060] In the dissolving step, physical forces such as ultrasound or microwave can be used to accelerate the dissolving process. Too high ultrasound power can easily cause the solvent to be over-heated and evaporated. As an example, the ultrasound power for the ultrasound treatment is 300-500 W, and the ultrasound time is 0.5-1 h.

[0061] In the dispersing step, ultrasound treatment can be used. The mechanical vibration and cavitation effect caused by the ultrasound can help to break the particle aggregates and achieve more uniform dispersion. In the dispersing step, the ultrasound power for the ultrasound treatment is 100-200 W, and the ultrasound time is 0.5-1 h.

[0062] As shown in FIG. 1, a coating sealing treatment method of a semiconductor component according to the present application comprises: Figure 2 Step S21, providing a semiconductor component body having a coating layer with a porosity greater than 0 on the surface thereof.

[0063] The semiconductor component comprises a plasma confinement ring and / or a middle ground ring.

[0064] As shown in FIG. 2a, after the semiconductor component body 21 is formed with a corrosion-resistant coating layer 22 by atmospheric plasma spraying (APS) or spray pyrolysis deposition (SPS), etc., the coating layer 22 comprises rare earth metal oxides. Due to the inherent process reasons, the coating layer 22 has a certain porosity 221, and the porosity is greater than 0. Therefore, the coating sealing treatment is needed to reduce the porosity as close to 0 as possible, and to improve the density and corrosion resistance of the coating layer 22. It can be understood that the sealing agent of the present application can be applied to various coating layers with a porosity greater than 0, and is not limited to the coating layer formed by thermal spraying.

[0065] Figure 3 Step S22, providing a sealing agent.

[0066] The sealing agent comprises rare earth metal oxide nanoparticles, film-forming aids, and organic polar solvents. First, the film-forming aids are uniformly dissolved in the organic polar solvents to form a clear film-forming aid solution, and then the rare earth metal oxide nanoparticles are slowly added and dispersed and stirred until a uniform colloidal solution is formed.

[0067] Step S23, applying the sealing agent to the semiconductor component body so that the sealing agent completely covers the coating layer of the semiconductor component body.

[0068] Step S23, applying the sealing agent to the semiconductor component body so that the sealing agent completely covers the coating layer of the semiconductor component body.

[0069] ​In some embodiments, applying the sealing agent to the semiconductor component body includes immersing the semiconductor component body in the sealing agent for a period of time, allowing the sealing agent to uniformly penetrate into the pores of the coating. The immersion time depends on the coating thickness; thicker coatings typically require longer immersion times to ensure the sealing agent fully penetrates and completely fills the pores within the coating. For example, the immersion time is 5 to 10 hours.

[0070] In other embodiments, applying the sealing agent to the semiconductor component body includes: applying the sealing agent onto the coating.

[0071] Step S24: Remove the organic polar solvent, so that the rare earth metal oxide nanoparticles and the film-forming aid are cured and sealed in the pores of the coating.

[0072] The temperature for removing the organic polar solvent is less than 100°C. In some embodiments, removing the organic polar solvent refers to air drying at 70°C-80°C.

[0073] After the above-mentioned sealing process, a partial cross-sectional schematic diagram of the semiconductor component is shown below. Figure 3 As shown in Figure b, the pores 221 of the coating 22 are completely filled, forming a seamless coating with a uniform internal structure, low stress, and resistance to embrittlement. After penetrating into the pores, the sealing agent can also form a uniform protective film 23 on the surface of the coating 22. This protective film 23 can isolate the corrosive medium from the erosion of the coating 22, further improving the corrosion resistance of the coating 22.

[0074] In some embodiments, in order to minimize the porosity of the coating, steps S23→S24 can be repeated multiple times. Optionally, the cycle can be repeated 2 to 3 times.

[0075] The following comparative examples and Examples 1-2 demonstrate the effectiveness of the sealing agent of the present invention in sealing pores.

[0076] Comparative Example

[0077] A plasma confinement ring with a yttrium oxide coating formed by thermal spraying is provided. Without sealing agent treatment, it is used in a plasma treatment equipment after one maintenance cycle, allowing the coating to be exposed to a corrosive working environment for an extended period. A partial photograph is shown below. Figure 4 As shown in Figure a, the coating is visibly corroded, exposing the substrate.

[0078] Example 1

[0079] Step 1: Provide a plasma confinement ring with a yttrium oxide coating formed by thermal spraying, as shown in the scanning electron microscope image below. Figure 5Figure 1 shows a SEM image of the coating at a magnification of 5000, showing cracks and holes in the coating.

[0080] Step 2, preparation of the sealing agent: 50 g of PVDF was dispersed in 5 kg of DMF, and ultrasonic treatment was performed for 1 h to completely dissolve the PVDF, at an ultrasonic power of 300 W, to obtain a clear film-forming aid solution. Then, 25 g of yttrium oxide with a particle size of less than 5 nm was slowly added to the film-forming aid solution, and ultrasonic treatment was performed for 1 h to uniformly disperse the yttrium oxide, at an ultrasonic power of 200 W, to obtain the sealing agent in the form of a colloidal solution.

[0081] Step 3, after the plasma confinement ring was soaked in the sealing agent for 10 h, it was taken out and air-dried at about 70°C, and the SEM image is shown in Figure 2. Figure 5 Figure 2b shows a SEM image of the coating at a magnification of 5000, showing that the coating surface is smooth and flat, and no cracks or holes are visible.

[0082] After the plasma confinement ring after the sealing treatment was used in the plasma processing equipment for a maintenance period, so that the coating was in a corrosive working environment for a long time, the local photograph is shown in Figure 3. Figure 4 Figure 3b shows a SEM image of the coating at a magnification of 5000, and no corrosion is visible on the coating surface.

[0083] Example 2

[0084] Step 1, a plasma confinement ring with a yttrium oxide coating formed by thermal spraying was provided.

[0085] Step 2, preparation of the sealing agent: 15 g of Teflon was dispersed in 5 kg of DMF, and ultrasonic treatment was performed for 0.5 h to completely dissolve the Teflon, at an ultrasonic power of 500 W, to obtain a clear film-forming aid solution. Then, 5 g of yttrium oxide with a particle size of less than 5 nm was slowly added to the film-forming aid solution, and ultrasonic treatment was performed for 0.5 h to uniformly disperse the yttrium oxide, at an ultrasonic power of 100 W, to obtain the sealing agent in the form of a colloidal solution.

[0086] Step 3, after the plasma confinement ring was soaked in the sealing agent for 5 h, it was taken out and air-dried at about 80°C.

[0087] After the plasma confinement ring after the sealing treatment was used in the plasma processing equipment for a maintenance period, so that the coating was in a corrosive working environment for a long time, the local photograph is shown in Figure 4. Figure 4 Figure 4c shows a SEM image of the coating at a magnification of 5000, and no corrosion is visible on the coating surface.

[0088] In summary, in the sealing agent, the sealing medium and the film forming aid cooperate with each other, the ultra-small rare earth metal oxide nanoparticles are uniformly wrapped by the film forming aid, which not only helps the uniform dispersion of the sealing medium, but also helps the adhesion between the sealing medium and the inner wall of the pores of the coating, and improves the bonding force between the coating and the sealing medium. Moreover, the sealing agent uses the rare earth metal oxide nanoparticles which are consistent with the coating material or have similar properties as the sealing medium, and the sealing agent is not easy to shrink after solidification, the coating formed has good heat resistance, is not easy to be embrittled and cracked, and has greatly improved corrosion resistance, density and temperature resistance.

[0089] Although the present application has been described in detail by the above preferred embodiments, it should be appreciated that the above description should not be considered as limiting the present application. After reading the above description, various modifications and substitutions to the present application will be apparent to those skilled in the art. Therefore, the scope of protection of the present application should be defined by the appended claims.

Claims

1. A pore sealing agent, characterized by, The coating agent comprises: rare earth metal oxide nanoparticles, film forming assistant and organic polar solvent, the film forming assistant can be dissolved in the organic polar solvent.

2. The sealant of claim 1, wherein, The particle size of the rare earth metal oxide nanoparticles is not more than 5nm.

3. The pothole sealant of claim 1, wherein, The rare earth metal element in the rare earth metal oxide nanoparticles is selected from at least one or more than two combinations of Y, Ho, Er, Tm, Yb and Lu.

4. The pothole sealant of claim 1, wherein, The film forming assistant comprises at least one of PVDF, PTFE, ETFE, PVDF-HFP, PI, PEEK and PPS.

5. The pothole sealant of claim 1, wherein, The organic polar solvent comprises at least one of DMF, NMP, DMA and DMSO.

6. A method for preparing a sealant as claimed in any one of claims 1 to 5, characterized in that The coating agent comprises: The dissolving step: the film forming assistant is dissolved in the organic polar solvent to form a film forming assistant solution; the dispersing step: the rare earth metal oxide nanoparticles are dispersed in the film forming assistant solution to form the coating agent.

7. The method for preparing a sealant according to claim 6, wherein The mass ratio of the film forming assistant to the organic polar solvent is 0.3%-1%.

8. The method for preparing a sealant according to claim 6, wherein The mass ratio of the rare earth metal oxide nanoparticles to the film forming assistant solution is 0.1%-0.5%.

9. The method for preparing a sealant according to claim 6, wherein The dissolving step and / or the dispersing step further comprises ultrasonic treatment.

10. The method for preparing a sealant according to claim 9, wherein In the dissolving step, the ultrasonic power of the ultrasonic treatment is 300W-500W, and the ultrasonic time is 0.5h-1h.

11. The method for preparing a sealant according to claim 9, wherein the step of mixing the components is performed at a temperature of 20 to 30°C. In the dispersing step, the ultrasonic power of the ultrasonic treatment is 100W-200W, and the ultrasonic time is 0.5h-1h.

12. A coating sealing treatment method for a semiconductor component, characterized by The coating agent comprises: A semiconductor component body is provided, which has a coating layer with a porosity greater than 0 on its surface; A coating agent as claimed in any one of claims 1-5 is provided; The coating agent is applied to the semiconductor component body, so that the coating agent completely covers the coating layer of the semiconductor component body; The organic polar solvent is removed, so that the rare earth metal oxide nanoparticles and the film forming assistant are solidified and sealed in the pores of the coating layer.

13. The coating sealing treatment method for a semiconductor component according to Claim 12, wherein The coating layer comprises rare earth metal oxide.

14. The coating sealing treatment method for a semiconductor component according to Claim 13, wherein In the coating agent, the rare earth metal oxide nanoparticles are the same as the rare earth metal oxide material of the coating layer.

15. The coating sealing treatment method for a semiconductor component according to Claim 12, wherein The application of the coating agent to the semiconductor component body comprises: immersing the semiconductor component body in the coating agent, so that the coating agent uniformly penetrates into the pores of the coating layer.

16. The coating sealing treatment method for a semiconductor component according to Claim 15, wherein The immersion time is 5h-10h.

17. The coating sealing treatment method for a semiconductor component according to Claim 12, wherein The application of the coating agent to the semiconductor component body comprises: applying the coating agent on the coating layer.

18. The coating sealing treatment method for a semiconductor component according to Claim 12, wherein The temperature for removing the organic polar solvent is less than 100℃.

19. The coating sealing treatment method for a semiconductor component according to Claim 18, wherein The removal of the organic polar solvent refers to air drying treatment at 70℃-80℃.

20. The coating sealing treatment method for a semiconductor component according to Claim 12, wherein The semiconductor component comprises: a plasma confinement ring and / or a middle ground ring.

Images