Novel magnetron sputtering instrument

Abstract

The invention relates to the technical field of magnetron sputtering instruments, in particular to a novel magnetron sputtering instrument which comprises a magnetron sputtering instrument shell, and an efficient target material utilization technology, a magnetic field enhancement technology and a multi-target co-deposition technology are built in the magnetron sputtering instrument shell. And the precise temperature control assembly is arranged on the surface of the magnetron sputtering instrument shell. The surface of the target material is uniformly bombarded by ions, so that the utilization rate of the material is improved, the replacement frequency of the target material is reduced, the operation cost is reduced, the intensity and layout of a magnetic field are adjusted, the distribution of plasmas can be optimized, the energy and density of ions are more uniform, and the uniformity and compactness of a film layer are improved; therefore, excellent physical properties are obtained.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of magnetron sputtering instrument, in particular to a novel magnetron sputtering instrument. BACKGROUND

[0002] Magnetron sputtering is a kind of physical vapor deposition, and general sputtering method can be used to prepare metal, semiconductor, insulator and other materials, and has the advantages of simple equipment, easy control, large plating area and strong adhesion, etc. The magnetron sputtering method developed in the 1970s realizes high speed, low temperature and low damage. Because it is carried out at low pressure, the ionization rate of the gas must be effectively improved. Magnetron sputtering introduces a magnetic field on the surface of the target cathode, uses the magnetic field to constrain the charged particles to improve the plasma density and increase the sputtering rate. The magnetron sputtering instrument is usually used in an automatic control mode, which reduces gas pollution, ensures the purity and stability of the deposition process, and prevents some unavoidable problems from occurring during use.

[0003] The above-mentioned and existing related devices often have the following defects: the target material utilization rate in the traditional sputtering system is low, the strength and layout of the magnetic field are not coordinated, the distribution of the plasma cannot be optimized, multiple elements or compounds cannot be deposited in the same process flow, the substrate temperature cannot be accurately controlled, which is the key to affecting the performance of the thin film, the substrate surface cannot be cleaned, and the adhesion between the thin film and the substrate cannot be improved.

[0004] Based on this, a novel magnetron sputtering instrument is provided, which can eliminate the disadvantages of the existing devices. SUMMARY

[0005] In view of the above problems, a novel magnetron sputtering instrument is provided, which solves the above problems by a novel device.

[0006] To solve the problems of the prior art, the present application provides a novel magnetron sputtering instrument, which comprises a magnetron sputtering instrument shell, an efficient target material utilization technology, a magnetic field enhancement technology, a multi-target co-deposition technology, an ion source auxiliary technology, an atmosphere control technology and an oxidation-resistant coating are installed inside the magnetron sputtering instrument shell, and a precise temperature control assembly, a high vacuum rapid air exhaust assembly, an automatic control assembly and a high-precision thickness monitoring assembly are arranged on the surface of the magnetron sputtering instrument shell.

[0007] Preferably, the precise temperature control assembly comprises a temperature detector and a high-precision temperature control device; wherein the temperature detector is installed inside the magnetron sputtering instrument shell, and the high-precision temperature control device is installed on the upper surface of the magnetron sputtering instrument shell.

[0008] Preferably, the high vacuum rapid air exhaust assembly comprises a turbine molecular pump and an air exhaust pipe; wherein the turbine molecular pump is installed on one side surface of the magnetron sputtering instrument shell, and the air exhaust pipe is installed on the upper surface of the turbine molecular pump.

[0009] Preferably, the automatic control assembly comprises an intelligent control panel and a touch screen; wherein the intelligent control panel is installed on one side surface of the magnetron sputtering instrument shell, and the touch screen is installed on one side surface of the intelligent control panel.

[0010] Preferably, the high-precision thickness monitoring assembly comprises a monitoring device and an adjusting processor; wherein the monitoring device is installed on one end of the exhaust pipe, and the adjusting processor is installed on the upper surface of the turbo molecular pump.

[0011] The beneficial effects of the present application compared with the prior art are:

[0012] The present application has the following beneficial effects compared with the prior art: BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1 It is a three-dimensional structure schematic diagram of a new type of magnetron sputtering instrument.

[0014] Figure 2 It is a precise temperature control assembly structure schematic diagram of a new type of magnetron sputtering instrument.

[0015] Figure 3 It is a high-vacuum rapid air exhaust assembly structure schematic diagram of a new type of magnetron sputtering instrument.

[0016] Figure 4 It is an automatic control assembly structure schematic diagram of a new type of magnetron sputtering instrument.

[0017] In the figure, the label is: 1, magnetron sputtering instrument shell; 2, high-efficiency target material utilization technology; 3, magnetic field enhancement technology; 4, multi-target co-deposition technology; 5, precise temperature control assembly; 51, temperature detector; 52, high-precision temperature control device; 6, ion source auxiliary technology; 7, high-vacuum rapid air exhaust assembly; 71, turbo molecular pump; 72, exhaust pipe; 8, automatic control assembly; 81, intelligent control panel; 82, touch screen; 9, high-precision thickness monitoring assembly; 91, monitoring device; 92, adjusting processor; 10, atmosphere control technology; 11, oxidation-resistant coating. DETAILED DESCRIPTION

[0018] In order to further understand the features, technical means and specific purposes and functions of the present application, the present application is described in further detail below in combination with the drawings and specific embodiments.

[0019] Embodiment 1

[0020] The embodiment provides a novel magnetron sputtering instrument, which comprises a magnetron sputtering instrument shell 1, an efficient target material utilization technology 2, a magnetic field enhancement technology 3, a multi-target co-deposition technology 4, an accurate temperature control component 5, an ion source auxiliary technology 6, a high vacuum rapid air exhaust component 7, an automatic control component 8, a high-precision thickness monitoring component 9, an atmosphere control technology 10 and an oxidation-resistant coating 11.

[0021] The magnetron sputtering instrument shell 1 has dustproof and waterproof effects; the efficient target material utilization technology 2, the magnetic field enhancement technology 3, the multi-target co-deposition technology 4, the ion source auxiliary technology 6 and the atmosphere control technology 10 are all built-in the magnetron sputtering instrument shell 1 and are respectively used for rotating a target to improve material utilization, adjusting a magnetic field to optimize plasma distribution, depositing multiple elements or compounds in the same process flow, adding additional ion bombardment in the sputtering process and depositing materials under different atmosphere conditions; the accurate temperature control component 5, the high vacuum rapid air exhaust component 7, the automatic control component 8, the high-precision thickness monitoring component 9 and the oxidation-resistant coating 11 are all arranged on the surface of the magnetron sputtering instrument shell 1, wherein the accurate temperature control component 5 is used for accurately controlling the temperature of a substrate, the high vacuum rapid air exhaust component 7 is used for reaching a required high vacuum environment in a short time, the automatic control component 8 is used for realizing automatic operation, the high-precision thickness monitoring component 9 is used for monitoring the thickness of a film, and the oxidation-resistant coating 11 is used for preventing oxidation and corrosion of equipment components.

[0022] The accurate temperature control component 5 comprises a temperature detector 51 installed inside the magnetron sputtering instrument shell 1 and a high-precision temperature control device 52 installed on the upper surface of the magnetron sputtering instrument shell 1.

[0023] The high vacuum rapid air exhaust component 7 comprises a turbo molecular pump 71 installed on one side surface of the magnetron sputtering instrument shell 1 and an air exhaust pipe 72 installed on the upper surface of the turbo molecular pump 71.

[0024] The automatic control component 8 comprises an intelligent control panel 81 installed on one side surface of the magnetron sputtering instrument shell 1 and a touch screen 82 installed on one side surface of the intelligent control panel 81.

[0025] The high-precision thickness monitoring component 9 comprises a monitoring device 91 installed at one end of the air exhaust pipe 72 and an adjustment processor 92 installed on the upper surface of the turbo molecular pump 71.

[0026] The working principle of the novel magnetron sputtering instrument is as follows: the magnetron sputtering instrument shell 1 provides dustproof and waterproof protection, and the various technologies built therein respectively play the roles of improving material utilization and optimizing plasma distribution; the precise temperature control assembly 5 detects and controls the substrate temperature; the high-vacuum rapid air extraction assembly 7 realizes rapid vacuum extraction; the automatic control assembly 8 realizes automatic operation and controls process parameters; the high-precision thickness monitoring assembly 9 monitors the film thickness and feeds back adjustment; and the oxidation-resistant coating 11 prevents oxidation and corrosion of the equipment assembly, thereby ensuring the stability and reliability of the system.

[0027] The above examples only express one or several embodiments of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the scope of the present application. It should be noted that, for those skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are all within the scope of protection of the present application. Therefore, the scope of protection of the present application should be subject to the appended claims.

Claims

1. A novel magnetron sputtering apparatus, characterized in that, The device includes a magnetron sputtering instrument housing (1), which is equipped with high-efficiency target utilization technology (2), magnetic field enhancement technology (3), multi-target co-deposition technology (4), ion source-assisted technology (6), atmosphere control technology (10) and an anti-oxidation coating (11). The surface of the magnetron sputtering instrument housing (1) is provided with a precise temperature control component (5), a high-vacuum rapid evacuation component (7), an automatic control component (8) and a high-precision thickness monitoring component (9).

2. The novel magnetron sputtering apparatus according to claim 1, characterized in that, The precision temperature control component (5) includes a temperature detector (51) and a high-precision temperature control device (52); wherein the temperature detector (51) is installed inside the magnetron sputtering instrument housing (1), and the high-precision temperature control device (52) is installed on the upper surface of the magnetron sputtering instrument housing (1).

3. The novel magnetron sputtering apparatus according to claim 1, characterized in that, The high-vacuum rapid evacuation assembly (7) includes a turbomolecular pump (71) and an evacuation pipe (72); wherein the turbomolecular pump (71) is installed on one side surface of the magnetron sputtering instrument housing (1), and the evacuation pipe (72) is installed on the surface above the turbomolecular pump (71).

4. A novel magnetron sputtering apparatus according to claim 1, characterized in that, The automated control component (8) includes an intelligent control panel (81) and a touch screen (82); wherein the intelligent control panel (81) is installed on one side surface of the magnetron sputtering instrument housing (1), and the touch screen (82) is installed on one side surface of the intelligent control panel (81).

5. A novel magnetron sputtering apparatus according to claim 1, characterized in that, The high-precision thickness monitoring component (9) includes a monitoring device (91) and an adjustment processor (92); wherein the monitoring device (91) is installed at one end of the exhaust pipe (72), and the adjustment processor (92) is installed on the surface above the turbomolecular pump (71).

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