A stabilizing device and method for artificial crystal growth

Abstract

This invention relates to the field of artificial crystal growth technology and discloses a stabilizing device and method for artificial crystal growth. The stabilizing device includes a base, with a pulling furnace fixedly connected to the top of the base. It also includes a crucible, with multiple sets of support frames fixedly connected to the bottom of the pulling furnace, and the crucible fixedly connected between the support frames. An opening / closing part is provided inside the pulling furnace to open or close the top of the crucible. A pulling frame is also included, with a support base fixedly connected to the top of the pulling furnace, and the pulling frame mounted on top of the support base. The pulling frame has a pulling part that aids crystal growth, and a shock-absorbing part is provided between the support base and the bottom of the pulling frame. This invention, through the use of shock-absorbing pads, an upper limiter, and a lower limiter, can effectively dampen vibrations between the support base and the pulling frame, thereby avoiding adverse effects of vibrations caused by various factors on the crystal growth process, ensuring stability during crystal growth, and thus improving the quality of crystal growth.

Description

Technical Field

[0001] This invention relates to the field of artificial lens growth technology, specifically to a stabilizing device and method for artificial lens growth. Background Technology

[0002] Artificial crystal growth refers to the process of arranging and assembling the atoms that make up a crystal according to a specified rule under specific conditions using artificial methods. After a continuous and relatively long process, the crystal material is finally formed. This process may take a day, a week, or even longer.

[0003] Artificial crystal growth furnaces are important equipment for producing semiconductor materials, optoelectronic materials, piezoelectric and ferroelectric materials, etc. According to the process method, artificial crystal growth furnaces are divided into Czochralski crystal growth furnaces and zone melting crystal growth furnaces. Czochralski crystal growth furnaces are also called Czochralski furnaces and are the main force in the production of the above materials.

[0004] Currently, for a Czochralski furnace to successfully complete the production process of crystal materials, in addition to the furnace itself being in good working order, it is also necessary to ensure that the furnace is not affected by external vibrations during the production process. This is because vibrations can severely affect the orderly arrangement of atoms in the melt on the seed crystal, leading to crystal growth failure. Furthermore, when the raw material is melted into a molten material, some of its components will evaporate, which will increase the gas pressure inside the Czochralski furnace. This can easily cause gas inside the furnace to be forced into the melt, forming bubbles, which in turn reduces the quality of crystal growth. Therefore, a stabilizing device for artificial crystal growth has been proposed. Summary of the Invention

[0005] This invention provides a stabilizing device for artificial crystal growth. By setting up shock-absorbing pads, upper limiters, and lower limiters, an effective shock absorption effect can be formed between the support base and the lifting frame, thereby avoiding the adverse effects of vibration caused by various factors on the lifting of crystal growth. This solves the problem mentioned in the background art that vibration can seriously affect the process of regular arrangement of atoms in the melt on the seed crystal, causing crystal growth failure.

[0006] This invention provides the following technical solution:

[0007] A stabilizing device for artificial crystal growth includes a base, a Czochralski furnace fixedly connected to the top of the base, and a crucible. Multiple sets of support frames are fixedly connected to the bottom of the Czochralski furnace, and the crucible is fixedly connected between the multiple sets of support frames. An opening / closing part for opening or closing the top of the crucible is provided inside the Czochralski furnace. A pulling frame is installed on top of a support base, and a pulling part for aiding crystal growth is provided on the pulling frame. A shock-absorbing part is provided between the support base and the bottom of the pulling frame. Piston boxes are fixedly connected to both sides of the pulling frame, and gas guides for reducing gas pressure inside the Czochralski furnace are provided on the piston boxes.

[0008] As a preferred embodiment of the present invention, the shock-absorbing part includes a shock-absorbing rubber pad, both ends of which are fixedly connected to bolts. An upper limit device is fixedly connected to the bottom of the lifting frame, and a lower limit device is fixedly connected to the top of the support base. Four sets of upper and lower limit devices are symmetrically arranged. The lower end bolt of the shock-absorbing rubber pad is threadedly connected to the through hole of the lower limit device. The outer wall of the lower limit device is fitted into the inner cavity of the upper limit device. The upper end bolt of the shock-absorbing rubber pad passes through the through hole of the upper limit device and is fixedly connected to the bottom of the lifting frame through a nut.

[0009] As a preferred embodiment of the present invention, the lifting part includes a vertical screw, which is rotatably connected to the middle of the inner cavity of the lifting frame. A drive motor is fixedly connected to the top of the lifting frame, and the output shaft of the drive motor is fixedly connected to the top end of the vertical screw. A lifting sleeve is threaded onto the vertical screw, and a lifting plate is fixedly connected to the side wall of the lifting sleeve. A lifting rod is rotatably connected to the bottom of the lifting plate, and the bottom end of the lifting rod penetrates into the lifting furnace and is fixedly connected to a clamping part.

[0010] As a preferred embodiment of the present invention, the clamping part includes a top plate, which is fixedly connected to the bottom end of the lifting rod. A limiting groove is formed on the top plate, and clamping plates are slidably connected to both sides of the limiting groove. A clamping screw is rotatably connected to the bottom side wall of the lifting rod, and the clamping plates on both sides are threaded onto the clamping screw, with the thread directions on both sides of the clamping screw being opposite.

[0011] As a preferred embodiment of the present invention, the connection between the lifting rod and the lifting furnace is rotatably connected to a linkage ring via a bearing. The cross-section of the lifting rod is cross-shaped and passes through the center of the linkage ring and engages with it. The bottom end of the vertical screw is connected to the linkage ring via a pulley set for transmission.

[0012] As a preferred embodiment of the present invention, the gas guiding part includes a piston plate, which is slidably connected inside a piston box. A return spring is fixedly connected between the side wall of the piston plate and the inner wall of the piston box. A movable trapezoidal plate is fixedly connected to the outer side wall of the piston plate. Fixed trapezoidal plates are fixedly connected to both sides of the lifting sleeve. The fixed trapezoidal plates are aligned with the movable trapezoidal plates. The piston boxes on both sides are connected by a first conduit. A second conduit is fixedly connected to the middle of the first conduit. A suction pipe is fixedly connected to the side wall of the lifting furnace. The other end of the suction pipe is connected to the second conduit. A one-way valve is provided inside the suction pipe.

[0013] As a preferred embodiment of the present invention, the opening and closing part includes two sets of sealing plates, and the bottom sides of the inner cavity of the lifting furnace are rotatably connected to rotating shafts. The sealing plates are fixedly connected to the top of the rotating shafts, and a pneumatic part for driving the rotating shafts is provided in the base.

[0014] As a preferred embodiment of the present invention, the pneumatic unit includes a pneumatic impeller, and pneumatic slots are provided on both sides of the base. The bottom end of the rotating shaft extends into the pneumatic slot, and the pneumatic impeller is fixedly connected to the outer wall of the rotating shaft located in the pneumatic slot. The two pneumatic slots are connected to each other by an exhaust pipe, and the exhaust pipe is connected to a second conduit. A one-way valve is provided in the exhaust pipe. When the exhaust pipe simultaneously fills the two pneumatic slots with airflow, the two rotating shafts will simultaneously rotate towards the side closer to the inner wall of the pulling furnace, along with the two side sealing plates.

[0015] As a preferred embodiment of the present invention, a negative pressure pump is fixedly connected to the top of the base, the input end of the negative pressure pump is connected to the inner cavity of the lifting furnace, a gas filling pipe is fixed and connected to the side wall of the lifting furnace, the other end of the gas filling pipe is connected to an argon storage tank, and a solenoid valve is provided on the gas filling pipe.

[0016] A method for growing artificial crystals, comprising the following steps:

[0017] Step 1: First, place the raw materials for crystal growth into the crucible and fix the seed crystal at the bottom of the lifting rod;

[0018] Step 2: Melt the raw materials in the crucible while preheating the seed crystal;

[0019] Step 3: Then drive the seed crystal to move down and contact the melt to begin growth;

[0020] Step 4: While rotating, pull the seed crystal upwards to gradually transform the molten material into crystals.

[0021] Compared with the prior art, the present invention provides a stabilizing device and method for artificial crystal growth, which has the following beneficial effects:

[0022] 1. This stabilizing device for artificial crystal growth, through the setting of shock-absorbing pads, upper limiters, and lower limiters, can form an effective shock absorption effect between the support base and the lifting frame, thereby avoiding the adverse effects of vibration caused by various factors on the lifting of crystal growth, ensuring the stability of the crystal lifting and growth process, and thus improving the quality of crystal growth.

[0023] 2. The stabilizing device for artificial crystal growth uses a sealing plate to shield the top of the crucible, ensuring that the heat from subsequent melting is more concentrated, thereby improving melting efficiency and reducing heat loss. Furthermore, when the lifting sleeve moves downward, the piston box generates airflow thrust and suction in stages. First, the thrust opens the sealing plate by itself, and second, the suction reduces the air pressure inside the lifting furnace, facilitating the rapid upward floating and discharge of bubbles in the melt, thus improving the growth quality of the crystal.

[0024] 3. The stabilizing device for artificial crystal growth, when the vertical screw rotates and moves the seed crystal downward, utilizes the linkage ring and pulley assembly to make the lifting rod rotate synchronously, thereby agitating the gas in the Czochralski furnace and distributing heat evenly within the furnace, ensuring the stability of the thermal environment; when the vertical screw rotates and moves the seed crystal upward, the seed crystal can generate a stirring effect at the melt interface, firstly promoting the uniform mixing of components in the melt, ensuring the quality of crystal growth, and secondly, combined with the negative pressure environment in the Czochralski furnace, allowing bubbles in the melt to be better discharged, preventing bubbles from being captured by the growth interface and directly sealed into the crystal to form transparent or hollow inclusions, thus improving the quality of crystal growth. Attached Figure Description

[0025] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the accompanying drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. In all the drawings, the elements or parts are not necessarily drawn to actual scale.

[0026] Figure 1 This is a first-view perspective stereoscopic diagram of the present invention;

[0027] Figure 2 This is a second-view perspective stereoscopic diagram of the present invention;

[0028] Figure 3 This is a three-dimensional side view sectional diagram of the present invention;

[0029] Figure 4 For the present invention Figure 3 Enlarged structural diagram of region A in the middle;

[0030] Figure 5 For the present invention Figure 3 Enlarged structural diagram of region B in the middle;

[0031] Figure 6 This is a partial cross-sectional perspective view of the present invention;

[0032] Figure 7 For the present invention Figure 6 Enlarged structural diagram of region C in the middle;

[0033] Figure 8 This is a three-dimensional schematic diagram of the shock-absorbing part of the present invention.

[0034] In the diagram: 1. Base; 2. Lifting furnace; 21. Crucible; 22. Support frame; 3. Lifting frame; 31. Support seat; 32. Drive motor; 4. Piston box; 41. Piston plate; 42. Return spring; 43. Moving trapezoidal plate; 44. Fixed trapezoidal plate; 45. First conduit; 451. Second conduit; 452. Suction pipe; 5. Shock-absorbing pad; 51. Upper limit switch; 52. Lower limit switch; 6. Vertical screw; 61. Lifting sleeve; 62. Lifting plate; 63. Lifting rod; 7. Top plate; 71. Limiting groove; 72. Clamping plate; 73. Clamping screw; 74. Linkage ring; 75. Pulley assembly; 8. Negative pressure pump; 81. Air filling pipe; 9. Sealing plate; 91. Rotating shaft; 92. Pneumatic impeller; 93. Pneumatic groove; 931. Exhaust pipe. Detailed Implementation

[0035] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0036] Example 1:

[0037] Reference Figures 1-8 A stabilizing device for artificial crystal growth includes a base 1, with a pulling furnace 2 fixedly connected to the top of the base 1. It also includes a crucible 21, with multiple sets of support frames 22 fixedly connected to the bottom of the pulling furnace 2. The crucible 21 is fixedly connected between the multiple sets of support frames 22. The crucible 21 is made of graphite material and is wrapped with a spiral resistance tube on its outer side. Existing resistance heating technology is used to melt the raw materials inside; the specific principle of which will not be elaborated here. The pulling furnace 2 is equipped with an opening and closing part to open or close the top of the crucible 21. A pulling frame 3 is also included, with a support base 31 fixedly connected to the top of the pulling furnace 2. The pulling frame 3 is mounted on top of the support base 31 and has a pulling part that aids in crystal growth. A shock-absorbing part is provided between the support base 31 and the bottom of the pulling frame 3. Piston boxes 4 are fixedly connected to both sides of the pulling frame 3, and gas guides are provided on the piston boxes 4 to reduce the gas pressure inside the pulling furnace 2.

[0038] Reference Figures 1-3and Figure 8 The shock-absorbing part includes a shock-absorbing rubber pad 5, both ends of which are fixedly connected with bolts. The bottom of the lifting frame 3 is fixedly connected with an upper limit device 51, and the top of the support base 31 is fixedly connected with a lower limit device 52. The upper limit device 51 and the lower limit device 52 are symmetrically arranged in four sets. The lower end bolt of the shock-absorbing rubber pad 5 is threadedly connected to the through hole of the lower limit device 52. The outer wall of the lower limit device 52 is fitted into the inner cavity of the upper limit device 51. The upper end bolt of the shock-absorbing rubber pad 5 passes through the through hole of the upper limit device 51 and is fixedly connected to the bottom of the lifting frame 3 through a nut.

[0039] By setting up the above structure, an effective shock absorption effect can be formed between the support base 31 and the lifting frame 3, thereby avoiding the adverse effects of vibration caused by various factors on the crystal growth lifting, ensuring the stability of the crystal lifting growth process, and thus improving the crystal growth quality.

[0040] Reference Figures 1-4 and Figure 6 The lifting section includes a vertical screw 6, which is rotatably connected to the middle of the inner cavity of the lifting frame 3. A drive motor 32 is fixedly connected to the top of the lifting frame 3, and the output shaft of the drive motor 32 is fixedly connected to the top end of the vertical screw 6. A lifting sleeve 61 is threaded onto the vertical screw 6, and a lifting plate 62 is fixedly connected to the side wall of the lifting sleeve 61. A lifting rod 63 is rotatably connected to the bottom of the lifting plate 62. The bottom end of the lifting rod 63 penetrates into the lifting furnace 2 and is fixedly connected to a clamping part. The clamping part includes a top plate 7, which is fixedly connected to the bottom end of the lifting rod 63. A limit groove 71 is provided on the top plate 7 for limiting the movement of the lifting rod 63. Both sides of the chute 71 are slidably connected to clamping plates 72. A clamping screw 73 is rotatably connected to the bottom side wall of the lifting rod 63. Both clamping plates 72 are threaded onto the clamping screw 73, and the threads on both sides of the clamping screw 73 are in opposite directions. The connection between the lifting rod 63 and the lifting furnace 2 is rotatably connected to a linkage ring 74 through a bearing. The cross-section of the lifting rod 63 is cross-shaped and passes through the center of the linkage ring 74 and engages with it. The bottom end of the vertical screw 6 is connected to the linkage ring 74 through a pulley set 75. That is, when the lifting rod 63 moves downward along the linkage ring 74, it can also rotate.

[0041] With the above-described structure, the seed crystal is placed between the two clamping plates 72, and the clamping screw 73 is rotated, causing the two clamping plates 72 to move closer to the seed crystal, ultimately fixing the seed crystal at the top plate 7. The drive motor 32 is then turned on, causing it to drive the vertical screw 6 to rotate, which in turn causes the lifting sleeve 61 to move the lifting plate 62 downwards. This allows the lifting rod 63 to move the seed crystal into the crucible 21. Furthermore, the linkage ring 74 and the pulley assembly 75 cause the lifting rod 63 to rotate as well, thus agitating the gas inside the Czochralski furnace 2 and ensuring that the heat is evenly distributed within the furnace, guaranteeing the stability of the thermal environment and improving the quality of crystal growth. Simultaneously, the lifting rod 63 also drives the seed crystal to rotate, ensuring that the seed crystal is evenly contacted with the heat inside the furnace 2. This achieves uniform preheating, and eventually the bottom of the seed crystal moves down to contact the melt inside the crucible 21. At this time, the atoms of the melt will continue to arrange themselves at the bottom of the seed crystal, and then the crystal composed of melt atoms will begin to grow along the bottom of the seed crystal. At the same time, the drive motor 32 is turned on again, causing it to drive the vertical screw 6 to rotate in the opposite direction, so that the lifting sleeve 61 moves upward with the lifting plate 62. At this time, the lifting rod 63 will move upward slowly and rotate synchronously. At this time, the rotation action can generate a stable shear flow near the melt interface, which plays a stirring role, promotes the uniform mixing of the components in the melt, and thins the diffusion boundary layer, thereby ensuring the quality of crystal growth. After a certain period of time, the melt material is transformed into crystal after being lifted, thus completing the crystal growth.

[0042] Reference Figure 2 , Figure 6 and Figure 7 The gas guiding part includes a piston plate 41, which is slidably connected inside the piston box 4. A return spring 42 is fixedly connected between the side wall of the piston plate 41 and the inner wall of the piston box 4. A movable trapezoidal plate 43 is fixedly connected to the outer side wall of the piston plate 41. Fixed trapezoidal plates 44 are fixedly connected to both sides of the lifting sleeve 61. The fixed trapezoidal plates 44 and the movable trapezoidal plates 43 are aligned. The two piston boxes 4 are connected to each other through a first conduit 45. A second conduit 451 is fixedly connected to the middle of the first conduit 45. A suction pipe 452 is fixedly connected to the side wall of the lifting furnace 2. The other end of the suction pipe 452 is connected to the second conduit 451, and a one-way valve is provided inside the suction pipe 452.

[0043] See also Figure 1 , Figure 3 and Figure 6 The piston box 4 is fixedly connected to the side facing the lifting sleeve 61 with a limiting guide rail. The fixed trapezoidal plate 44 slides up and down along the limiting guide rail, thereby using the limiting guide rail to limit the sliding trajectory of the fixed trapezoidal plate 44, ensuring that the seed crystal can descend and rise smoothly.

[0044] It should be noted that the one-way valve in the suction pipe 452 can only allow the gas in the lifting furnace 2 to enter the piston box 4.

[0045] With the above structure, during the downward movement of the lifting sleeve 61, the fixed trapezoidal plate 44 will squeeze the moving trapezoidal plate 43. When the fixed trapezoidal plate 44 passes the highest point of the moving trapezoidal plate 43, under the rebound action of the return spring 42, the piston plate 41 will return to slide and generate negative pressure suction in the piston box 4, thereby opening the one-way valve in the suction pipe 452, so that some gas in the lifting furnace 2 is sucked into the piston box 4, thereby reducing the gas pressure in the inner cavity of the lifting furnace 2 and changing its internal pressure to a state lower than normal. This facilitates the rapid rise and discharge of bubbles in the melt, while avoiding the situation where the gas pressure in the lifting furnace 2 increases due to the evaporation of some substances in the melt, resulting in some argon being forced into the melt, thus ensuring the growth quality of the crystal.

[0046] Reference Figure 2 , Figure 3 and Figure 5 The opening and closing part includes two sets of sealing plates 9. Rotating shafts 91 are rotatably connected to both sides of the bottom of the inner cavity of the lifting furnace 2. The sealing plates 9 are fixedly connected to the top of the rotating shafts 91. The sealing plates 9 cover the top of the crucible 21 and leave a certain gap for subsequent oxygen extraction and inert gas filling. A pneumatic part for driving the rotating shafts 91 is provided in the base 1. The pneumatic part includes a pneumatic impeller 92. Pneumatic slots 93 are opened on both sides of the base 1. The bottom end of the rotating shaft 91 passes through the pneumatic slot 93. The pneumatic impeller 92 is fixedly connected to the outer wall of the rotating shaft 91 located in the pneumatic slot 93. The two pneumatic slots 93 are connected by an exhaust pipe 931. The exhaust pipe 931 is connected to the second conduit 451. A one-way valve is provided in the exhaust pipe 931. When the exhaust pipe 931 simultaneously fills the two pneumatic slots 93 with airflow, the two rotating shafts 91 will simultaneously rotate the two sealing plates 9 towards the side closer to the inner wall of the lifting furnace 2.

[0047] With the above structure, during the process of the fixed trapezoidal plate 44 pressing the moving trapezoidal plate 43, the piston plate 41 will move towards the side of the compression return spring 42, thereby compressing the gas in the piston box 4 and opening the one-way valve in the exhaust pipe 931, so that the compressed gas enters the pneumatic groove 93 along the exhaust pipe 931, thereby using the airflow thrust to drive the pneumatic impeller 92 to rotate, thereby causing the two sets of rotating shafts 91 to each carry the top sealing plate 9 to rotate towards the side closer to the inner wall of the pulling furnace 2, thereby opening the top port of the crucible 21 and releasing heat, so that the heat radiates upward, thereby further preheating the seed crystal and effectively reducing the temperature gradient between the seed crystal and the melt.

[0048] Reference Figures 1-3A negative pressure pump 8 is fixedly connected to the top of the base 1. The input end of the negative pressure pump 8 is connected to the inner cavity of the lifting furnace 2. A gas filling pipe 81 is fixed and connected to the side wall of the lifting furnace 2. The other end of the gas filling pipe 81 is connected to the argon storage tank, and a solenoid valve is installed on the gas filling pipe 81.

[0049] With the above-described structure, the negative pressure pump 8 is turned on to extract the original air from the Czochralski furnace 2. Once the furnace 2 is evacuated to a vacuum state, the negative pressure pump 8 is turned off, and the solenoid valve in the gas filling pipe 81 is opened to allow argon gas to enter the furnace 2. Once the furnace 2 returns to normal pressure, the solenoid valve in the gas filling pipe 81 is closed, thus creating an inert gas environment inside the furnace 2. This prevents the material from oxidizing at high temperatures, ensuring the quality of crystal growth. Furthermore, the stirring effect of the seed crystal rotation on the melt allows for better expulsion of bubbles from the melt, preventing them from being captured by the growth interface and directly sealed into the crystal to form transparent or hollow inclusions, thereby improving the quality of crystal growth.

[0050] Example 2:

[0051] Reference Figures 1-8 Similar to Example 1, but based on Example 1, a method for growing artificial crystals is proposed, with the following steps:

[0052] Step 1: First, place the raw materials for crystal growth into the crucible 21 and fix the seed crystal at the bottom of the lifting rod 63;

[0053] Step 2: Melt the raw materials in crucible 21, and preheat the seed crystal at the same time;

[0054] Step 3: Then drive the seed crystal to move down and contact the melt to begin growth;

[0055] Step 4: While rotating, pull the seed crystal upwards to gradually transform the molten material into crystals.

[0056] Reference Figures 1-8In this invention, during use, the Czochralski furnace 2 is first opened, and the raw materials for crystal growth are placed into the crucible 21. The two side sealing plates 9 are rotated to cover the top of the crucible 21, ensuring that the heat from subsequent melting is more concentrated, thereby improving melting efficiency and reducing heat loss. Next, the seed crystal is placed between the two side clamping plates 72, and the clamping screw 73 is rotated to bring the two side clamping plates 72 closer to the seed crystal, finally fixing the seed crystal at the top plate 7. Then, the Czochralski furnace 2 is closed, and the negative pressure pump 8 is turned on to remove the original air from the Czochralski furnace 2. Once the inside of the Czochralski furnace 2 is evacuated to a vacuum state, the furnace is closed. The negative pressure pump 8 is used to open the solenoid valve in the gas filling pipe 81, allowing argon gas to enter the Czochralski furnace 2. After the pressure inside the Czochralski furnace 2 returns to normal, the solenoid valve in the gas filling pipe 81 is closed, thus creating an inert gas protective environment inside the Czochralski furnace 2. This prevents the material from oxidizing at high temperatures, ensuring the quality of crystal growth. Then, resistance heating technology is used to melt the raw materials in the crucible 21, and the heat dissipated into the Czochralski furnace 2 is used to preheat the seed crystal, thereby reducing temperature differences and allowing the seed crystal to be safely and stably integrated into the melt material, thus improving the quality of crystal growth.

[0057] Next, the drive motor 32 is turned on, causing the vertical screw 6 to rotate. This causes the lifting sleeve 61 to move the lifting plate 62 downward, thus moving the lifting rod 63 with the seed crystal into the crucible 21. During this process, the fixed trapezoidal plate 44 will squeeze the moving trapezoidal plate 43, causing the piston plate 41 to move towards the side of the compression return spring 42. This compresses the gas in the piston box 4 and opens the one-way valve in the exhaust pipe 931, allowing the compressed gas to enter the pneumatic groove 93 along the exhaust pipe 931. This uses the airflow thrust to drive the pneumatic impeller 92 to rotate, causing the two sets of rotating shafts 91 to rotate towards the side closer to the inner wall of the lifting furnace 2, thereby opening the top port of the crucible 21 and releasing heat. This allows the heat to radiate upward, further preheating the seed crystal and effectively reducing the temperature gradient between the seed crystal and the melt. When the fixed trapezoidal plate 44 passes the highest point of the moving trapezoidal plate 43, the piston plate 41 will return to its original position and slide under the rebound action of the return spring 42, generating a negative pressure suction force in the piston box 4. This opens the one-way valve in the suction pipe 452, allowing some of the gas in the Clifting Furnace 2 to be drawn into the piston box 4, thereby reducing the gas pressure inside the Clifting Furnace 2 and changing it to a state below atmospheric pressure. This facilitates the rapid rise and discharge of bubbles in the melt, while avoiding the situation where the gas pressure inside the Clifting Furnace 2 increases due to the evaporation of some substances in the melt, causing some argon gas to be forced into the melt, thus ensuring the growth quality of the crystal.

[0058] In addition, during the rotation of the vertical screw 6, the linkage ring 74 and the pulley group 75 will drive the lifting rod 63 to rotate together, thereby agitating the gas in the Czochralski furnace 2 and distributing the heat evenly in the Czochralski furnace 2, ensuring the stability of the thermal environment and thus improving the quality of crystal growth. Furthermore, the lifting rod 63 will also drive the seed crystal to rotate simultaneously, so that the seed crystal is evenly in contact with the heat in the Czochralski furnace 2, thereby achieving uniform preheating.

[0059] Finally, the bottom of the seed crystal will move down to contact the melt inside the crucible 21. At this time, the atoms of the melt will continue to arrange themselves at the bottom of the seed crystal. Subsequently, the crystal composed of melt atoms will begin to grow along the bottom of the seed crystal. At the same time, the drive motor 32 is turned on again, causing it to drive the vertical screw 6 to rotate in the opposite direction, so that the lifting sleeve 61 moves upward with the lifting plate 62. At this time, the lifting rod 63 will move upward slowly and rotate synchronously. At this time, the rotation can generate a stable shear flow near the melt interface, which plays a stirring role, promotes the uniform mixing of the components in the melt, and thins the diffusion boundary layer, thereby ensuring the quality of crystal growth. In addition, the negative pressure environment in the Czochralski furnace 2 can better remove the bubbles in the melt. After a certain period of time, the melt material is transformed into a crystal after being lifted, thus completing the crystal growth.

[0060] Components not described in detail in this article are existing technologies.

[0061] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A stabilizing device for artificial crystal growth comprising a base (1), characterized in that, The base (1) top fixedly connected with pull the furnace (2), still include: Crucible (21), the pull the furnace (2) bottom fixedly connected with multiple groups of support frame (22), the crucible (21) is fixedly connected between multiple groups of support frame (22), and the pull the furnace (2) is provided with the opening or closing crucible (21) top end's opening and closing part; Pull the frame (3), the top of pull the furnace (2) is fixedly connected with support seat (31), pull the frame (3) is installed in support seat (31) top, pull the frame (3) is provided with the pull part of help crystal growth, and the support seat (31) and pull the frame (3) bottom between setting have shockproof part; Wherein, the both sides of pull the frame (3) are fixedly connected with piston box (4), the piston box (4) is provided with the gas guide part of reducing the gas pressure in pull the furnace (2); The shockproof part includes shock-absorbing rubber pad (5), both ends of the shock-absorbing rubber pad (5) are fixedly connected with bolt, the bottom of pull the frame (3) is fixedly connected with upper limit stopper (51), the top of support seat (31) is fixedly connected with lower limit stopper (52), the upper limit stopper (51) and lower limit stopper (52) are all symmetrically provided with four groups, the lower end bolt of shock-absorbing rubber pad (5) is threadedly connected between the perforation of lower limit stopper (52), the outer wall of lower limit stopper (52) is embedded in the inner cavity of upper limit stopper (51), the upper end bolt of shock-absorbing rubber pad (5) passes through the perforation of upper limit stopper (51) and is fixedly connected with the bottom of pull the frame (3) through the nut; The pull part includes vertical screw rod (6), the vertical screw rod (6) is rotatably connected in the middle of the inner cavity of pull the frame (3), the top of pull the frame (3) is fixedly connected with drive motor (32), the output shaft of drive motor (32) is fixedly connected with the top end of vertical screw rod (6), the vertical screw rod (6) is threadedly sleeved with lifting sleeve (61), the side wall of lifting sleeve (61) is fixedly connected with lifting plate (62), the bottom of lifting plate (62) is rotatably connected with pull rod (63), the bottom end of pull rod (63) penetrates into pull the furnace (2) and is fixedly connected with clamping part; The gas guide part includes piston plate (41), the piston plate (41) is slidably connected in piston box (4), the side wall of piston plate (41) and the inner wall of piston box (4) are fixedly connected with return spring (42), the outer side wall of piston plate (41) is fixedly connected with dynamic trapezoidal plate (43), both sides of lifting sleeve (61) are fixedly connected with fixed trapezoidal plate (44), the fixed trapezoidal plate (44) is aligned with dynamic trapezoidal plate (43), both sides the piston box (4) is connected through first conduit (45), the middle part of first conduit (45) is fixed and connected with second conduit (451), the side wall of pull the furnace (2) is fixed and connected with suction pipe (452), the other end of suction pipe (452) is connected with second conduit (451), and the suction pipe (452) is provided with one-way valve; The opening and closing part includes two sets of closing plates (9), both sides of the bottom of the inner cavity of the pulling furnace (2) are rotationally connected with rotating shafts (91), the closing plates (9) are fixedly connected to the top ends of the rotating shafts (91), and the base (1) is provided with pneumatic parts for driving the rotating shafts (91).

2. The stabilizer for growing artificial crystals according to claim 1, wherein The clamping part includes a top plate (7) fixedly connected to the bottom end of the pulling rod (63), a limiting sliding groove (71) is formed in the top plate (7), both sides of the limiting sliding groove (71) are slidably connected with clamping plates (72), a clamping screw rod (73) is rotationally connected to the side wall of the bottom end of the pulling rod (63), both sides of the clamping plates (72) are threadedly sleeved on the clamping screw rod (73), and the screw directions of both sides of the clamping screw rod (73) are opposite.

3. The stabilizer for growing artificial crystals according to claim 1, wherein The connecting part between the pulling rod (63) and the pulling furnace (2) is rotationally connected with a linkage ring (74) through a bearing, the cross section of the pulling rod (63) is cross-shaped and passes through the center of the linkage ring (74) and is clamped therewith, and the bottom end of the vertical screw rod (6) and the linkage ring (74) are drivingly connected through a belt wheel set (75).

4. The stabilizer for growing artificial crystals according to claim 1, wherein The pneumatic part includes pneumatic impellers (92), both sides of the base (1) are provided with pneumatic grooves (93), the bottom ends of the rotating shafts (91) penetrate into the pneumatic grooves (93), the pneumatic impellers (92) are fixedly connected to the outer walls of the rotating shafts (91) in the pneumatic grooves (93), both sides of the pneumatic grooves (93) are connected in communication through an exhaust pipe (931), the exhaust pipe (931) is connected in communication with the second conduit (451), and the exhaust pipe (931) is provided with a one-way valve, When the exhaust pipe (931) simultaneously fills air flow into both sides of the pneumatic grooves (93), both rotating shafts (91) will rotate with both sides of the closing plates (9) to the side close to the inner wall of the pulling furnace (2).

5. The stabilizer for growing artificial crystals according to claim 1, wherein The base (1) is fixedly connected with a negative pressure pump (8) at the top, the input end of the negative pressure pump (8) is connected in communication with the inner cavity of the pulling furnace (2), the side wall of the pulling furnace (2) is fixedly connected with an air charging pipe (81) in communication, the other end of the air charging pipe (81) is connected in communication with an argon storage tank, and the air charging pipe (81) is provided with a solenoid valve.

6. A method for growing artificial crystals using the stabilizing device for growing artificial crystals as claimed in claim 1, wherein The steps are as follows: Step one: first, put the raw materials for crystal growth into the crucible (21), and fix the seed crystal at the bottom end of the pulling rod (63); Step two: melt the raw materials in the crucible (21), and preheat the seed crystal at the same time; Step three: then drive the seed crystal to move downward and contact the melt and start to grow; Step four: rotate and pull the seed crystal upward at the same time, so that the melt material gradually changes into a crystal.

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