Valve structure and semiconductor device

Abstract

The invention discloses a valve structure and semiconductor equipment, the valve structure comprises a ventilation structure, the ventilation structure comprises a first side communicated with a semiconductor reaction cavity through a first fluid channel and a second side opposite to the first side, and the second side is communicated with a pump through a pipeline; a plurality of ventilation holes are formed in the first side of the ventilation structure; a plurality of valves, wherein each valve corresponds to one vent hole; wherein a second fluid channel is formed between each vent hole and the corresponding valve, the first fluid channel is communicated with the second fluid channels through the plurality of vent holes, and each valve completely or partially covers the corresponding second fluid channel during opening and closing and is used for adjusting the air pressure in the reaction cavity. According to the invention, rapid switching and accurate control of the air pressure in the reaction cavity of the semiconductor equipment are realized; through the longitudinal structure that the valves are perpendicular to the ventilation structure, the number of the valves which can be arranged in unit area is increased.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more specifically to a valve structure and semiconductor equipment. Background Technology

[0002] In semiconductor manufacturing etching, the Bosch process is the most commonly used etching method, which employs an alternating etching / deposition process. In the deposition step, a polymer layer is first deposited to protect the sidewalls. Then, in the etching step, the underlying polymer and silicon are simultaneously etched away. Anisotropic etching results are achieved by balancing the etching and deposition steps. This process involves not only switching between different gas types but also varying gas pressures. In existing etching processes, the switching of different gas pressures is primarily controlled by a swing valve.

[0003] As the performance requirements of semiconductor devices increase, more stringent demands are being placed on etching processes, requiring shorter etching / deposition steps in Bosch processes. This places higher demands on pressure control devices. Current designs control gas pressure by opening and closing a swing valve, with the valve's response and opening / closing speed determining the pressure switching speed. The swing valve's movement time is proportional to its displacement, resulting in significant variations in movement time during small and large pressure changes. This causes two problems: First, within the limited etching / deposition time, if the swing valve moves significantly for a long time, it may not have enough time to stabilize the pressure before needing readjustment, leading to a dynamic equilibrium and chaotic gas flow between different gas types. Second, the precise timing of the etching / deposition gas action cannot be adjusted, requiring lengthy process adjustments for adaptation, resulting in wasted time and costs. Summary of the Invention

[0004] The purpose of this invention is to provide a valve structure and semiconductor device to solve the problems of existing designs where swing valves need to move significantly and for extended periods within a limited etching / deposition time, and adjustments are required before the gas pressure can be stabilized, resulting in a dynamic equilibrium adjustment of the gas pressure and causing chaotic airflow of different gas types; and the inability to precisely adjust the specific time of etching / deposition gas action, requiring lengthy process debugging for adaptation, resulting in wasted time and costs.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0006] On one hand, the present invention provides a valve structure, comprising:

[0007] The ventilation structure includes a first side connected to the semiconductor reaction chamber through a first fluid channel, and a second side opposite to the first side, the second side being connected to a pump through a pipe; the first side of the ventilation structure has multiple ventilation holes.

[0008] Multiple valves are located on the second side of the ventilation structure, and each valve corresponds to one of the ventilation holes;

[0009] Each of the vent holes forms a second fluid channel with the corresponding valve. The first fluid channel is connected to the second fluid channel through multiple vent holes. Each valve, when opened or closed, completely or partially covers its corresponding second fluid channel to adjust the gas pressure in the reaction chamber.

[0010] Preferably, all of the valves are arranged perpendicular to the ventilation structure.

[0011] Preferably, each of the valves includes:

[0012] The valve port is located at the end of the corresponding second fluid channel and is connected to the corresponding vent hole;

[0013] A valve plate is disposed on one side of the valve port, and the valve plate covers all or part of its corresponding second fluid channel during opening and closing.

[0014] Preferably, the plurality of vents have the same or different sizes.

[0015] Preferably, the plurality of vents have the same or different shapes.

[0016] Preferably, the area of ​​each vent hole is not less than the maximum opening / closing area of ​​the corresponding valve.

[0017] Preferably, each valve has multiple opening and closing positions, and the valve has different opening and closing areas when it is in different opening and closing positions.

[0018] Preferably, it further includes: a plurality of chambers, each of the chambers being connected to the corresponding vent and the valve to form the second fluid channel.

[0019] Preferably, it further includes: at least one drive mechanism, each of the drive mechanisms being connected to one or more of the valves for controlling the opening and closing state of one or more of the valves.

[0020] Preferably, each of the drive mechanisms is arranged perpendicular to the ventilation structure.

[0021] Preferably, each of the drive mechanisms includes:

[0022] A drive motor is mounted on the drive mechanism;

[0023] The screw is connected to the output end of the drive motor;

[0024] A connector, the first end of which is connected to the screw, and the second end of which is connected to the valve;

[0025] The screw drives the connecting member to move, thereby adjusting the opening and closing state of the valve.

[0026] Preferably, it further includes a control system connected to the drive mechanism for controlling the operation of the drive mechanism to adjust the opening and closing state of the valve.

[0027] Preferably, the control system includes multiple control units, each of which is connected to one or more drive mechanisms. The multiple control units are arranged in series or in parallel to adjust the opening and closing states of the multiple valves simultaneously or separately.

[0028] On the other hand, the present invention also provides a semiconductor device, including: a valve structure as described above;

[0029] reaction chamber;

[0030] The opening and closing states of multiple valves are adjusted to switch the gas pressure within the reaction chamber.

[0031] Compared with the prior art, the present invention has the following beneficial effects:

[0032] The present invention provides a valve structure and semiconductor device that, by setting up a ventilation structure and multiple valves, enables rapid switching and precise control of the gas pressure in the reaction chamber of the semiconductor device. This avoids chaotic airflow of different gas types in the semiconductor reaction chamber, eliminates the need for lengthy process debugging for adaptation, reduces time and labor costs, and improves the working efficiency of the semiconductor device. Attached Figure Description

[0033] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description will be briefly introduced below. Obviously, the accompanying drawings described below are three embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort:

[0034] Figure 1 A schematic diagram of a valve structure provided in an embodiment of the present invention;

[0035] Figure 2 This is a schematic diagram of a valve and venting structure provided in an embodiment of the present invention;

[0036] Figure 3A schematic diagram of a cavity with an arc-shaped inner wall provided in an embodiment of the present invention;

[0037] Figure 4 A schematic diagram of vent holes of different sizes provided in an embodiment of the present invention;

[0038] Figure 5 A schematic diagram of the drive mechanism provided in an embodiment of the present invention;

[0039] Figure 6 A side view of a drive mechanism provided according to an embodiment of the present invention.

[0040] Explanation of reference numerals in the attached drawings: 101-ventilation structure; 1011-first side; 1012-second side; 102-vent hole; 103-valve; 1031-valve port; 1032-valve plate; 104-drive mechanism; 1041-drive motor; 1042-screw; 1043-connector; 105-chamber; 1051-second fluid channel. Detailed Implementation

[0041] The following is in conjunction with the appendix Figure 1-6 The valve structure and semiconductor device proposed in this invention will be further described in detail below with specific embodiments. The advantages and features of this invention will become clearer from the following description. It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions, only for the purpose of conveniently and clearly illustrating the embodiments of this invention. Please refer to the accompanying drawings to make the objectives, features, and advantages of this invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportional relationships, or adjustments to the size, without affecting the effects and objectives achieved by this invention, should still fall within the scope of the technical content disclosed in this invention.

[0042] refer to Figure 1 and Figure 2 As shown, this embodiment provides a valve structure, including: a venting structure 101 and a plurality of valves 103. The venting structure 101 includes a first side 1011 communicating with a semiconductor reaction chamber through a first fluid channel, and a second side 1012 opposite to the first side 1011, the second side 1012 being connected to a pump through a pipe; the first side 1011 has a plurality of vent holes 102 (see reference). Figure 1 As shown, Figure 1 Each square in the diagram represents a vent 102. The shape, number, or distribution of the vents 102 are set according to process requirements to suit different air pressure regulation ranges and speed requirements, and are not limited to... Figure 1 (The shape, number, or distribution of the vent holes 102 provided in the reaction chamber). Multiple valves 103 are located on the second side 1012, each valve 103 corresponding to one vent hole 102; wherein, a second fluid channel 1051 is formed between each vent hole 102 and its corresponding valve 103, the first fluid channel communicating with the second fluid channel 1051 through the multiple vent holes 102, and each valve 103, during opening and closing, fully or partially covers its corresponding second fluid channel 1051, for adjusting the gas pressure within the reaction chamber. Multiple valves 103 are adjusted individually or simultaneously to control each valve 103 to fully or partially cover its corresponding second fluid channel 1051 (see reference). Figure 2 As shown, in this embodiment, "coverage" is specifically achieved through the positional change of the valve plate 1032 relative to the valve port 1031. For example, as the valve plate 1032 moves from left to right along the valve port 1031, the obstruction of the valve plate 1032 causes the cross-sectional area of ​​the valve port 1031 through which the second fluid channel 1051 can pass to gradually decrease, and the valve plate 1032 obstructs the airflow flowing in the second fluid channel 1051. When the valve plate 1032 partially obstructs the valve port 1031, it corresponds to the "partial coverage" situation, and when the valve plate 1032 completely obstructs the valve port 1031, it corresponds to the "complete coverage" situation. That is, adjusting the opening and closing or valve opening and closing area of ​​each valve 103. Compared with the single swing valve in the traditional technology, the valve structure provided in this embodiment reduces a lot of actuation time, accurately controls the gas pressure in the semiconductor reaction chamber, and avoids the chaotic airflow of different gas types in the semiconductor reaction chamber caused by inaccurate gas pressure control or excessive swing valve actuation time.

[0043] Continue to refer to Figure 2 As shown, in this embodiment, the plurality of valves 103 are all arranged perpendicularly to the venting structure 101. The valves 103 are perpendicular to the longitudinal structure formed by the venting structure 101, so that each valve 103 occupies only an area approximately the same as the area of ​​the vent hole 102, thereby increasing the number of valves 103 per unit area on the venting structure 101 and improving the control accuracy of the valve structure in this embodiment.

[0044] Continue to refer to Figure 2 As shown, each of the valves 103 includes a valve port 1031 and a valve plate 1032. The valve port 1031 is located at the end of the corresponding second fluid channel 1051 and communicates with the corresponding vent hole 102. The valve plate 1032 is disposed on one side of the valve port 1031, and the valve plate 1032 completely or partially covers its corresponding second fluid channel 1051 during opening and closing.

[0045] In this embodiment, each valve 103 has multiple opening and closing positions (see reference). Figure 5As shown, the adjustment of the opening / closing position is achieved through the cooperation of the drive motor 1041, the screw 1042, and the connecting member 1043. Specifically, the drive motor 1041 drives the screw 1042 to rotate, causing the connecting member 1043 to move along the screw 1042, thereby causing the position of the valve plate 1032 relative to the valve port 1031 to change. The valve plate 1032 stops when it moves to different positions relative to the valve port 1031, so as to control the valve 103 to have different opening / closing areas, so that the valve 103 has multiple opening / closing positions. The valve 103 is in different opening / closing positions, corresponding to different opening / closing areas. Setting multiple opening / closing positions improves the control accuracy of the valve structure. Specifically, if there are one hundred valves 103 on this ventilation structure 101, and each valve 103 has only one opening / closing position, the fully open state of each valve 103 corresponds to 1% (1 / 100) of the total opening. Therefore, the total opening can only be adjusted in units of "1%", and smaller adjustment amounts cannot be achieved. At this time, the control accuracy is 1%. Furthermore, if there are two or three opening / closing positions, the control accuracy becomes 0.5% or 0.3%. This multi-opening / closing position design provides higher air pressure regulation control accuracy, enabling the system to adapt to the air pressure changes required by different process steps, avoiding the problem of a large amount of time wasted by moving a single valve significantly, and achieving rapid and accurate air pressure switching.

[0046] Continue to refer to Figure 2 As shown, the valve structure further includes a plurality of chambers 105, each chamber 105 being connected to the corresponding vent 102 and the valve 103 to form the second fluid channel 1051. In this embodiment, the inner wall of the chamber 105 is inclined, and the inner wall of the chamber 105 can also be configured with different shapes to form chambers 105 with different shaped cavities. For example, the inner wall of the chamber 105 can be configured as an upwardly convex arc (see reference). Figure 3 The arc-shaped structure of the inner wall of the middle chamber 105 ensures smooth and rapid airflow within the chamber. (See also: [reference needed]) Figure 5 or Figure 6 As shown, chamber 105 has a cuboid structure with an opening and a cavity, and is disposed between the ventilation structure 101 and the drive mechanism 104. It should be noted that... Figure 6 The ventilation structure 101 shown is only a part of the ventilation structure 101.

[0047] refer to Figure 1 and Figure 4 As shown, the plurality of vent holes 102 have the same or different sizes. The sizes of the plurality of vent holes 102 can be set to the same size or partially the same size, depending on design requirements or actual process conditions. (Reference) Figure 4 As shown, ventilation holes 102 of different sizes are provided on the ventilation structure 101. Figure 4The squares on the central ventilation structure 101 represent ventilation holes 102. The arrangement of ventilation holes 102 of different sizes can be adjusted according to actual working conditions and is not limited to... Figure 4 The distribution of the vents (as shown in the diagram) enables different levels of airflow control. Larger vents 102 can be used for rapid pressure adjustment, while smaller vents 102 can be used for fine-tuning. The plurality of vents 102 can have the same or different shapes. Each vent 102 can be circular, square, fan-shaped, or any other suitable shape to adapt to different airflow characteristics and manufacturing processes. The design of identical or different sizes and shapes improves the flexibility and accuracy of pressure regulation, allowing the valve structure to adapt to various process requirements.

[0048] Furthermore, the area of ​​each vent 102 is not less than the maximum opening / closing area of ​​its corresponding valve 103 (reference). Figure 2 As shown, the maximum opening and closing area is the cross-sectional area of ​​the valve port 1031 when the valve plate 1032 does not obstruct the valve port 1031, that is... Figure 2 The positions of valve plate 1032 and valve port 1031 shown correspond to the maximum opening area of ​​valve 103. This ensures that valve 103 does not restrict airflow when fully open, thereby guaranteeing the maximum flow rate of the airflow channel and achieving rapid air pressure adjustment.

[0049] Continue to refer to Figure 2 As shown, the valve structure further includes at least one drive mechanism 104, each drive mechanism 104 being connected to one or more valves 103 for controlling the opening and closing states of one or more valves 103. That is, one drive mechanism 104 can control multiple valves 103 to achieve synchronous opening and closing, or each valve 103 can be equipped with an independent drive mechanism 104 for more precise independent control. Each drive mechanism 104 is vertically arranged with the venting structure 101. This vertical arrangement of the drive mechanism 104 with the venting structure 101 increases the number of valves 103 per unit area on the venting structure 101.

[0050] refer to Figure 5 and Figure 6 As shown, each of the drive mechanisms 104 includes: a drive motor 1041, a screw 1042, and a connector 1043. The drive motor 1041 is mounted on the drive mechanism 104; the screw 1042 is connected to the output end of the drive motor 1041, and the end of the screw 1042 is cylindrical. The chamber 105 is located near the surface of the screw 1042 (i.e., Figure 5A groove is formed on the upper surface of the intermediate chamber 105, and the end of the screw 1042 is disposed in the groove, serving only to support the end of the screw 1042. The first end of the connector 1043 is connected to the screw 1042 (the first end of the connector 1043 has a threaded hole corresponding to the screw 1042, and the first end of the connector 1043 is threadedly connected to the screw 1042 through the threaded hole). The rotation of the screw 1042 utilizes the meshing of the helical pair to transmit motion and power. Specifically, the rotation of the screw 1042 drives the connector 1043 to move along the thread line on the screw 1042, thereby converting rotational motion into linear motion. The second end of the connector 1043 is connected to the valve 103; wherein, the screw 1042 drives the connector 1043 to move, used to adjust the opening and closing state of the valve 103. Specifically, the drive motor 1041 starts, driving the screw 1042 to rotate, causing the connecting piece 1043 to move up and down, thereby driving the valve plate 1032 to move up and down, so as to adjust the opening and closing state of the valve 103.

[0051] Furthermore, the valve structure also includes a control system connected to the drive mechanism 104 for controlling the operation of the drive mechanism 104 to adjust the opening and closing state of the valve 103. The control system includes multiple control units, each of which is connected to one or more drive mechanisms 104. The multiple control units are arranged in series or in parallel to simultaneously or separately adjust the opening and closing states of multiple valves 103, thereby improving the applicability of the valve structure.

[0052] In a specific embodiment applied to a semiconductor device, the reaction chamber of the semiconductor device is connected to a gas pipeline (the channel within this gas pipeline corresponds to the first fluid channel described above). The gas pipeline is equipped with the aforementioned valve structure. The pressure within the semiconductor reaction chamber can be regulated by opening and closing multiple valves within the valve structure, and the pressure in the reaction chamber corresponds to the opening degree of each valve. Under process conditions, the minimum valve opening change is 0.1% (the proportion of the minimum opening to the total opening degree of all valves), and during the process, the pressure typically rises or falls no more than three times consecutively. Based on this, the design incorporates multiple valves including: 2 first valves, 3 second valves, and 15 third valves. The fully open state of each first valve corresponds to 35% of the total opening degree; the fully open state of each second valve corresponds to 5% of the total opening degree; and the fully open state of each third valve corresponds to 1% of the total opening degree. One of the 15 third valves has 10 opening positions, allowing the minimum valve opening degree to reach 0.1%, i.e., a control accuracy of 0.1%.

[0053] When the pressure in the reaction chamber is adjusted from a certain pressure value to the first set pressure (the first set pressure is the pressure set according to the process requirements) in the initial stage, the valve selection rules are as follows: 1. Pressure adjustment should be carried out by using the third valve that corresponds to 1% of the total opening degree in the fully open state, but it is necessary to ensure that at least 6 third valves are reserved not to participate in the adjustment (to ensure that there are enough third valves available for pressure adjustment in the subsequent pressure adjustment process); 2. The 1% of third valves participating in the pressure adjustment include the third valve with 10 positions.

[0054] For example:

[0055] If the required opening adjustment range of multiple valves is 0-8.5%, it can be achieved by opening nine third valves (including the third valve with opening adjustment, i.e., the 1% third valve with 10 positions mentioned above). If the required opening adjustment range of multiple valves is 0-9.6%, it can be achieved by opening one second valve and five third valves (including the third valve with opening adjustment, i.e., the third valve with 10 positions mentioned above).

[0056] During the process, rapid gas regulation is required, such as rapid switching between deposition and etching gases. In this case, the adjustment rules for ΔK (representing the change in valve opening) are as follows: if ΔK is less than 5%, only the combination of third valves is used; if ΔK is greater than 5% but less than 10%, a combination of several third valves and one second valve is used; if ΔK is greater than or equal to 10% but less than or equal to 15%, a combination of two second valves and several first valves is used.

[0057] On the other hand, this embodiment also provides a semiconductor device, including: a valve structure and a reaction chamber as described above; wherein, the opening and closing states of a plurality of valves 103 are adjusted for pressure switching within the reaction chamber. By adjusting the plurality of valves 103 individually or simultaneously to control all or part of the valves 103 to cover their corresponding second fluid channels 1051, i.e., adjusting the opening and closing or valve opening and closing area of ​​each valve 103, pressure switching within the reaction chamber is achieved.

[0058] Compared to the single swing valve in traditional technology, this invention significantly reduces the actuation time, enabling rapid switching and precise control of the gas pressure within the reaction chamber of semiconductor equipment. By incorporating a ventilation structure and multiple valves, and by increasing the number of valves that can be installed per unit area through the vertical structure of the valves perpendicular to the ventilation structure, the control accuracy of the valve structure is improved. This improved control accuracy eliminates the need for lengthy process adjustments during gas pressure control, reducing time and labor costs and increasing the working efficiency of the semiconductor equipment. Simultaneously, this invention avoids the chaotic airflow of different gas types within the semiconductor reaction chamber caused by inaccurate gas pressure control or excessively long swing valve actuation times.

[0059] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0060] In the description of this invention, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0061] In the description of this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0062] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0063] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A valve structure for use in a semiconductor device, characterized by, The valve structure comprises: a vent structure, the vent structure comprising a first side in communication with the semiconductor reaction chamber through a first fluid channel, and a second side opposite to the first side, the second side being in communication with a pump through a pipe; the first side of the vent structure being provided with a plurality of vent holes; a plurality of valves located on the second side of the vent structure, each of the valves corresponding to one of the vent holes; wherein a second fluid channel is formed between each of the vent holes and the corresponding valve, the first fluid channel being in communication with the second fluid channel through the plurality of vent holes, each of the valves fully or partially covering the corresponding second fluid channel in opening and closing, for adjusting the air pressure in the reaction chamber.

2. The valve structure of claim 1, wherein The plurality of valves are vertically arranged with the vent structure.

3. The valve structure of claim 1, wherein Each of the valves comprises: a valve port located at the end of the corresponding second fluid channel, in communication with the corresponding vent hole; and a valve plate arranged on one side of the valve port, the valve plate fully or partially covering the corresponding second fluid channel in opening and closing.

4. The valve structure of claim 1, wherein The plurality of vent holes have the same or different sizes.

5. The valve structure of claim 1, wherein The plurality of vent holes have the same or different shapes.

6. The valve structure of claim 1, wherein The area of each of the vent holes is not less than the maximum opening and closing area of the corresponding valve.

7. The valve structure of claim 1, wherein Each of the valves has a plurality of opening and closing positions, the valve corresponding to different opening and closing areas when located at different opening and closing positions.

8. The valve structure of claim 3, wherein Further comprising: a plurality of chambers, each of the chambers being in communication with the corresponding vent hole and the valve port to form the second fluid channel.

9. The valve structure of claim 1, wherein Further comprising: at least one driving mechanism, each of the driving mechanisms being connected with one or more of the valves for controlling the opening and closing state of the one or more valves.

10. The valve structure of claim 9, wherein Each of the driving mechanisms is vertically arranged with the vent structure.

11. The valve structure of claim 10, wherein Each of the driving mechanisms comprises: a driving motor arranged on the driving mechanism; a screw rod connected with the output end of the driving motor; a connecting piece having a first end connected with the screw rod and a second end connected with the valve; wherein the screw rod drives the connecting piece to move for adjusting the opening and closing state of the valve.

12. The valve structure of claim 11, wherein Further comprising a control system connected with the driving mechanisms for controlling the driving mechanisms to act, so as to adjust the opening and closing state of the valves.

13. The valve structure of claim 12, wherein The control system comprises a plurality of control units, each of the control units being connected with one or more of the driving mechanisms, the plurality of control units being arranged in series or in parallel, for simultaneously or respectively adjusting the opening and closing state of the plurality of valves.

14. A semiconductor device, characterized by comprising: The valve structure according to any one of claims 1-13; a reaction chamber; wherein the opening and closing state of the plurality of valves is adjusted for switching the air pressure in the reaction chamber. ​

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