Display mother board, display panel and display device

By setting a barrier structure and an etching shielding layer on the substrate, the problem of acid leakage during selective laser etching of Hybrid AMOLED products was solved, ensuring the stability and functionality of the display panel and improving the production efficiency and quality of the product.

CN121152500APending Publication Date: 2025-12-16BOE TECHNOLOGY GROUP CO LTD +1
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Patent Information

Application Number
CN202511400300.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-09-28
Publication Date
2025-12-16

AI Technical Summary

Technical Problem

Existing Hybrid AMOLED products suffer from etching edge issues at the motherboard etching edge during selective laser etching, leading to poor product functionality and affecting product performance.

Method used

By setting a barrier structure and an etching shielding layer on the side of the substrate near the encapsulation layer, the etching area and the barrier structure are covered, increasing the effective connection area between the substrate and the etching shielding layer, blocking the flow of etching acid to the display panel, and ensuring the effect of the display panel.

Benefits of technology

This effectively solved the problem of etching acid leakage, ensuring the stability and functionality of the display panel and improving product production efficiency and quality.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention provides a display mother board, display panels and a display device.The display mother board comprises a plurality of display panels, each display panel comprises a substrate, a driving circuit layer, a light-emitting device layer and a packaging layer which are arranged in a stacked mode, a blocking structure is arranged on the side, close to the packaging layer, of each substrate, and the blocking structures are arranged around the display panels; the substrate comprises an etching area used for selective laser etching, and the etching area is located on the outer side of the display panel; an etching shielding layer is arranged on the side, close to the packaging layer, of the substrate, located on the periphery of the display panel and covers the etching area and the corresponding blocking structure. The display mother board, the display panel and the display device are simple in structure and convenient to manufacture, the problem of acid leakage corrosion can be effectively solved, and the product effect is ensured.
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Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display mother board, a display panel and a display device. BACKGROUND

[0002] AMOLED (Active-matrix organic light-emitting diode) has the advantages of self-luminous, wide color gamut, high contrast, high response and flexibility, and has been widely used in the field of mobile phones. It gradually penetrates into the field of larger size, especially in the field of notebook computers, tablet computers and vehicle displays. With the development of technology, Hybrid (rigid and flexible hybrid) AMOLED has become the mainstream of medium-sized products. The substrate of the Hybrid product is a glass substrate, and the packaging is a flexible packaging layer.

[0003] In order to reduce the production cost of the Hybrid product and improve the strength performance, SLE (Selective Laser Induced Etching) technology is applied to the Hybrid product for cutting. However, the current technology has the problem of etching edge acid leakage of the mother board, which causes functional defects of the product. SUMMARY

[0004] Therefore, the purpose of the present application is to provide a display mother board, a display panel and a display device.

[0005] In a first aspect of the present application, a display mother board is provided, comprising a plurality of display panels, the display panel comprising a substrate, a driving circuit layer, a light-emitting device layer and a packaging layer arranged in layers, the substrate being provided with a blocking structure on the side close to the packaging layer, the blocking structure being arranged around the display panel; the substrate comprises an etching area for selective laser etching, the etching area being located on the outer side of the display panel; the substrate is provided with an etching shielding layer on the side close to the packaging layer, the etching shielding layer being located on the outer periphery of the display panel and covering the etching area and the corresponding blocking structure.

[0006] In some embodiments, the blocking structure comprises a first stop wall, the first stop wall being arranged spaced apart from the packaging layer, and the etching shielding layer covering the first stop wall.

[0007] In some embodiments, the blocking structure further comprises a second stop wall, the second stop wall being in abutment with the packaging layer and being arranged spaced apart from the first stop wall, and the etching shielding layer covering the second stop wall.

[0008] In some embodiments, the etching shielding layer covers the area between adjacent display panels.

[0009] In some embodiments, the encapsulation layer is provided with a touch layer on a side away from the substrate, the touch layer extending outward of the display panel along a plane in which the substrate is located and covering the etching region and the blocking structure to form the etching shielding layer.

[0010] In some embodiments, the encapsulation layer comprises a first inorganic film layer, a first organic film layer and a second inorganic film layer arranged in a stack, the first inorganic film layer being arranged close to the substrate.

[0011] In some embodiments, the encapsulation layer is provided with a touch layer on a side away from the substrate, the touch layer being provided with a second organic film layer on a side away from the substrate, the second organic film layer extending outward of the display panel along a plane in which the substrate is located and covering the etching region and the blocking structure to form the etching shielding layer.

[0012] In some embodiments, the second organic film layer has a thickness of 6-18 μm.

[0013] In some embodiments, the substrate is provided with an auxiliary shielding structure on a side close to the encapsulation layer, the etching shielding layer covering the auxiliary shielding structure, the auxiliary shielding structure covering the etching region and being arranged apart from the blocking structure; the auxiliary shielding structure comprises a first flat layer, a second flat layer and a pixel definition layer arranged in a stack, the first flat layer being arranged close to the substrate.

[0014] In a second aspect, the present application provides a display panel, which is obtained by etching a display mother board according to the first aspect.

[0015] In some embodiments, the selective laser etching process comprises: attaching a protective film to a side of the display mother board away from the substrate; performing a patterning process on the protective film to form a first pattern; attaching an acid-resistant film to a side of the protective film away from the substrate; performing laser modification on the substrate; attaching the display mother board to an auxiliary board such that the acid-resistant film is arranged close to the auxiliary board; performing chemical etching on the substrate; separating the display mother board from the auxiliary board; removing the acid-resistant film on the display mother board and removing part of the protective film on the display mother board according to the first pattern; and removing the etching shielding layer within the etching region by laser to divide the display mother board to obtain the display panel.

[0016] In a third aspect, the present application provides a display device comprising the display panel according to the second aspect.

[0017] It can be seen from the above that the application provides a display motherboard, a display panel and a display device. The display motherboard comprises a plurality of display panels. The display panel comprises a substrate, a driving circuit layer, a light-emitting device layer and an encapsulation layer which are arranged in layers. The substrate is provided with a blocking structure on the side close to the encapsulation layer. The blocking structure is arranged around the display panel. The substrate comprises an etching area for selective laser etching. The etching area is located on the outer side of the display panel. The substrate is provided with an etching shielding layer on the side close to the encapsulation layer. The etching shielding layer is located on the outer periphery of the display panel and covers the etching area and the corresponding blocking structure. By arranging the etching shielding layer to cover the etching area and the blocking structure, the effective connection area of the substrate and the etching shielding layer can be increased. In this way, the display motherboard can effectively block the flow of etching acid to the display panel during selective laser etching, thereby ensuring the effect of the display panel. The display motherboard, the display panel and the display device are simple in structure and convenient to manufacture. The acid leakage corrosion problem can be effectively solved, and the product effect can be ensured. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the application or the related art, the following will briefly introduce the drawings needed to be used in the embodiments or the related art description. Obviously, the drawings in the following description are only embodiments of the application, and other drawings can be obtained by those skilled in the art without creative effort.

[0019] Figure 1 It is a flowchart of a selective laser etching processing method.

[0020] Figure 2 It is a structural diagram of a protective film in selective laser etching.

[0021] Figure 3 It is a structural diagram of a protective film patterning process in selective laser etching.

[0022] Figure 4 It is a structural diagram of an acid-proof film in selective laser etching.

[0023] Figure 5 It is a structural diagram of infrared modulation in selective laser etching.

[0024] Figure 6 It is a structural diagram of an auxiliary plate in selective laser etching.

[0025] Figure 7 It is a structural diagram of an etching substrate in selective laser etching.

[0026] Figure 8 It is a structural diagram of removing an auxiliary plate in selective laser etching.

[0027] Figure 9 Structure diagram of a protective film and an acid-proof film removed in selective laser etching.

[0028] Figure 10 Structure diagram of an etching shielding layer removed by laser in selective laser etching.

[0029] Figure 11 Structure diagram of an ink layer attached in selective laser etching.

[0030] Figure 12 Structure diagram of an etching substrate in the related art.

[0031] Figure 13 Top view of an auxiliary plate in the related art.

[0032] Figure 14 Structure diagram of a display panel attached to an auxiliary plate in the related art.

[0033] Figure 15 Partial cross-sectional diagram of a display mother board in the related art.

[0034] Figure 16 Physical diagram of acid leakage corrosion of a display panel.

[0035] Figure 17 Top view of a display mother board in an embodiment of the present application.

[0036] Figure 18 Figure 17 Cross-sectional structure diagram at A in the related art.

[0037] Figure 19 Partial cross-sectional diagram of a display mother board in an embodiment of the present application.

[0038] Figure 20 Partial cross-sectional diagram of another display mother board in an embodiment of the present application.

[0039] FIG. 1 is a display panel; FIG. 2 is a substrate; 2-1 is an etching area; FIG. 3 is an encapsulation layer; 3-1 is a first inorganic film layer; 3-2 is a first organic film layer; 3-3 is a second inorganic film layer; FIG. 4 is a barrier structure; 4-1 is a first etching dam; 4-2 is a second etching dam; FIG. 5 is an etching shielding layer; FIG. 6 is a touch layer; FIG. 7 is a second organic film layer; FIG. 8 is an auxiliary shielding structure; 8-1 is a first planar layer; 8-2 is a second planar layer; 8-3 is a pixel definition layer; FIG. 9 is a protective film; FIG. 10 is an acid-proof film; FIG. 11 is an auxiliary plate; 11-1 is a via hole; FIG. 12 is an adhesive tape; FIG. 13 is an optical adhesive layer; FIG. 14 is a buffer layer; and FIG. 15 is an ink layer. DETAILED DESCRIPTION

[0040] ​In order to make the purpose, technical solutions and advantages of the present application clearer, the present application is further described in detail below with reference to the drawings and in conjunction with specific embodiments.

[0041] It should be noted that, unless otherwise defined, technical terms or scientific terms used in the embodiments of the present application should be understood as their common meanings to those having ordinary skills in the art to which the present application pertains. The terms "first", "second" and similar terms used in the embodiments of the present application do not represent any order, number or importance, but are only used to distinguish different components. The terms "comprise", "include" and similar terms mean that the components or objects listed before the terms encompass the components or objects listed after the terms and their equivalents, without excluding other components or objects. The terms "connect" or "connected" and similar terms do not mean physical or mechanical connection, but can include electrical connection, whether direct or indirect. The terms "upper", "lower", "left", "right" and the like only represent relative positional relationships, which can change accordingly when the absolute positions of the described objects change.

[0042] SLE technology is a subtractive manufacturing technology that uses laser radiation to locally modify transparent materials, and then removes the modified area by chemical etching. The core is to form permanent structural changes on the material surface by ultrafast laser (such as picosecond, femtosecond laser), and then remove the modified area by wet etching to realize high-precision 3D micro-nano machining.

[0043] As shown in Figure 1 is a flowchart of a selective laser etching processing method. A plurality of display panels are obtained by ESL etching a display mother board, for example, a Half Glass (half mother board) or a Q Glass (1 / 4 mother board). The specific ESL process steps are shown in Figures 2 to 11 . First, a protective film 9 (TPF) is attached (Lami) on the display mother board; second, a patterning process is performed on the protective film 9 to disconnect the protective film 9 between the display panels 1 for easy removal later; third, an acid-proof film 10 (CPF) is attached on the protective film 9; fourth, the substrate 2 is subjected to laser modification; fifth, a PVC auxiliary plate 11 is attached on the acid-proof film 10; sixth, the substrate 2 is subjected to chemical etching (Etching) thinning, for example, from 0.5T to 0.2T, and the substrate 2 is segmented according to the positions of the display panels 1; seventh, the display mother board and the auxiliary plate 11 are separated; eighth, the acid-proof film 10 is removed, and part of the protective film 9 is removed; ninth, the etching shield layer 5 (ESL) is disconnected by laser; tenth, an ink layer 15 is coated on the substrate 2 side of the display panel 1.

[0044] In the process of selectively etching the substrate 2, as shown in Figure 12As shown, the etching liquid will etch to both sides of the etching area 2-1. As shown Figure 13 As shown, in order to fix the display mother board, the auxiliary plate 11 is provided with a through hole 11-1, and a UV tape 12 is attached, and the tape 12 is attached to the display mother board through the through hole 11-1, which ensures stability and flatness. As shown Figure 14 As shown, because the display panel 1 is attached to the tape 12, the corners will bear internal tension, causing the etching shielding layer 5 and the substrate 2 to accelerate separation, and the blocking edge of the etching shielding layer 5 is small. The effective connection area of the etching shielding layer 5 and the substrate 2 becomes smaller, as shown Figure 15 As shown, the etching acid enters the inside along the separation of the substrate 2, corrodes the display panel 1, for example Figure 16 As shown, affecting the effect of the display panel 1, causing functional malfunctions.

[0045] In the process of implementing the present application, it is found that the coverage area of the etching shielding layer 5 can be increased to increase the blocking edge to reduce the influence of acid leakage. However, in the related art, the etching shielding layer 5 is made of the first flat layer 8-1, the second flat layer 8-2 or the pixel definition layer 8-3 in the display panel 1, because the display panel 1 also needs to be provided with the packaging layer 3 and the blocking structure 4, resulting in a small area of the etching shielding layer 5.

[0046] Hereinafter, the technical solutions of the present application will be described in detail through specific embodiments and in combination with Figures 17 to 20

[0047] Some embodiments of the present application provide a display mother board, as shown in Figure 17 and Figure 18 As shown, the display mother board includes a plurality of display panels 1, the display panel 1 includes a substrate 2, a driving circuit layer, a light emitting device layer and a packaging layer 3 arranged in layers, the substrate 2 is provided with a blocking structure 4 on the side close to the packaging layer 3, and the blocking structure 4 surrounds the display panel 1; the substrate 2 is provided with an etching area 2-1 for selective laser etching, and the etching area 2-1 is located on the outside of the display panel 1; the substrate 2 is provided with an etching shielding layer 5 on the side close to the packaging layer 3, and the etching shielding layer 5 is located on the periphery of the display panel 1 and covers the etching area 2-1 and the corresponding blocking structure 4.

[0048] The display mother board is, for example, a complete mother board, a half mother board or a 1 / 4 mother board, and the specific form is not limited, as shown in Figure 17 As shown, the display mother board includes a plurality of display panel 1 regions.

[0049] As shown, the display mother board includes a plurality of display panel 1 regions. Figure 18 As shown, the display mother board includes a plurality of display panel 1 regions. Figure 17 ​A cross-sectional view at middle A shows that the display panel 1 includes a substrate 2, a driving circuit layer, a light emitting device layer and an encapsulation layer 3 arranged in a stack. The substrate 2, for example, is a glass plate, providing support. The driving circuit layer, for example, is a thin film transistor array layer, used for display control. The light emitting device layer, for example, is an OLED device layer, used for light emission. The encapsulation layer 3 is used to block dust and water vapor from the outside, preventing the dust and water vapor from the outside from affecting the internal film layers.

[0050] The substrate 2 is provided with a blocking structure 4 on the side close to the encapsulation layer 3. The blocking structure 4, for example, is one or more groups of blocking walls. The blocking structure 4 is arranged around the display panel 1, which can limit the position of the encapsulation layer 3.

[0051] The substrate 2 includes an etching area 2-1 for selective laser etching. The etching area 2-1 is located on the outside of the display panel 1. The etching area 2-1 is a lateral etching area, which can be between the display panel 1 and the display panel 1, or between the display panel 1 and the edge of the display motherboard. Both are positions where acid leakage corrosion is prone to occur.

[0052] The substrate 2 is provided with an etching shielding layer 5 on the side close to the encapsulation layer 3. The etching shielding layer 5 is located on the periphery of the display panel 1 and covers the etching area 2-1 and the blocking structure 4 nearby. The etching shielding layer 5, for example, can be made of a separate layer of acid-resistant material, or can be made of an existing film layer of the display substrate 2. By covering the etching area 2-1 and the blocking structure 4 with the etching shielding layer 5, the effective connection area of the substrate 2 and the etching shielding layer 5 can be increased. In this way, the display motherboard can effectively block the etching acid from flowing to the display panel 1 during selective laser etching, ensuring the effect of the display panel 1.

[0053] The display motherboard has a simple structure and is easy to manufacture. It can effectively solve the problem of acid leakage corrosion and ensure product effectiveness.

[0054] In some embodiments, as shown in Figure 19 the blocking structure 4 includes a first blocking wall 4-1, and the etching shielding layer 5 covers the first blocking wall 4-1.

[0055] The first blocking wall 4-1, for example, is a blocking wall that blocks the second organic film layer 7 outside the encapsulation layer 3. The number of first blocking walls 4-1, for example, is one or more, which is not limited. By covering the first blocking wall 4-1 with the etching shielding layer 5, the effective connection area of the substrate 2 and the etching shielding layer 5 can be effectively increased, and acid corrosion can be blocked, compared with the prior art in which the etching shielding layer 5 and the first blocking wall 4-1 are spaced apart.

[0056] In some embodiments, as shown in Figure 19As shown, the blocking structure 4 further comprises a second barrier wall 4-2, which is in abutment with the encapsulation layer 3 and is spaced apart from the first barrier wall 4-1, and the etching shielding layer 5 covers the second barrier wall 4-2.

[0057] The second barrier wall 4-2 is, for example, a barrier wall for blocking the first organic film layer 3-2 in the encapsulation layer 3, and the number thereof is, for example, one or more, and is not specifically limited. By arranging the etching shielding layer 5 to cover the second barrier wall 4-2, the effective connection area of the substrate 2 and the etching shielding layer 5 can be further improved, and the stability is better.

[0058] In some embodiments, as shown in Figure 18 As shown, the etching shielding layer 5 covers the area between adjacent display panels 1.

[0059] By arranging the etching shielding layer 5 to completely cover the area between adjacent display panels 1, the effective connection area of the substrate 2 and the etching shielding layer 5 can be further improved, the stability is better, and the manufacturing is more convenient.

[0060] In some embodiments, as shown in Figure 18 As shown, the encapsulation layer 3 is provided with a touch layer 6 away from the side of the substrate 2, the touch layer 6 extends to the outside of the display panel 1 along the plane where the substrate 2 is located, and covers the etching area 2-1 and the blocking structure 4 to form the etching shielding layer 5.

[0061] The touch layer 6 is used to realize the touch sensing function, and is usually arranged outside the encapsulation layer 3 to coat the encapsulation layer 3 and is acid-resistant. The touch layer 6 can be extended to the outside of the display panel 1 as the etching shielding layer 5, for example, the touch layer 6 is arranged to completely cover the display mother board, which is more convenient, and can effectively cover the etching area 2-1 and the blocking structure 4 to avoid the problem of acid leakage and corrosion.

[0062] In some embodiments, as shown in Figure 15 As shown, the encapsulation layer 3 comprises a first inorganic film layer 3-1, a first organic film layer 3-2 and a second inorganic film layer 3-3 arranged in layers, and the first inorganic film layer 3-1 is arranged close to the substrate 2.

[0063] The encapsulation layer 3 includes a first inorganic film layer 3-1 (CVD1), a first organic film layer 3-2 (IJP1), and a second inorganic film layer 3-3 (CVD2) arranged in layers. The inorganic film layer can be made of inorganic materials with high density, such as silicon oxynitride (SiON), silicon oxide (SiOx), silicon nitride (SiNx), etc. The organic film layer can be made of high polymer materials containing desiccants, or high polymer materials capable of blocking water vapor. For example, high polymer resins are used to relieve the stress of the inorganic film layer, and water-absorbing materials such as desiccants can be included to absorb water, oxygen, and other substances that intrude into the interior. The thickness of the inorganic film layer is between 0.5 μm and 1.5 μm. For example, the thickness of the first inorganic film layer 3-1 is 1.0 μm, and the thickness of the second inorganic film layer 3-3 is 0.6 μm. The thickness of the organic film layer in the display area is between 5 μm and 10 μm, for example, 8 μm, 7 μm, or 9 μm.

[0064] In some embodiments, as shown in FIG. 1, the encapsulation layer 3 is provided with a touch layer 6 away from one side of the substrate 2. The touch layer 6 is provided with a second organic film layer 7 away from one side of the substrate 2. The second organic film layer 7 extends along the plane of the substrate 2 to the outside of the display panel 1 and covers the etching area 2-1 and the blocking structure 4 to form the etching shielding layer 5. Figure 19

[0065] The second organic film layer 7 can also be provided outside the touch layer 6. The material of the second organic film layer 7 can be the same as that of the first organic film layer 3-2 to further protect the display panel 1. The second organic film layer 7 is acid-resistant, and can be extended to the outside of the display panel 1 to be used as the etching shielding layer 5. For example, the second organic film layer 7 is provided to completely cover the display mother board. This arrangement is more convenient and can effectively cover the etching area 2-1 and the blocking structure 4 to avoid the problem of acid leakage and corrosion. Moreover, the second organic film layer 7 has higher flexibility than the touch layer 6, and its thickness can be adjusted. The thickness of the second organic film layer 7 can be 6 μm to 18 μm, for example, 6 μm, 8 μm, 10 μm, 15 μm, or 18 μm, etc. The thickness of the display panel 1 and the acid-blocking effect can be considered.

[0066] In some embodiments, the second organic film layer 7 and the touch layer 6 can be simultaneously extended along the plane of the substrate 2 to the outside of the display panel 1 and cover the etching area 2-1 and the blocking structure 4 to form the etching shielding layer 5. The second organic film layer 7 covers the touch layer 6 to further improve the acid-blocking effect and flatness.

[0067] In some embodiments, as shown in FIG. 1, the encapsulation layer 3 is provided with a touch layer 6 away from one side of the substrate 2. The touch layer 6 is provided with a second organic film layer 7 away from one side of the substrate 2. The second organic film layer 7 extends along the plane of the substrate 2 to the outside of the display panel 1 and covers the etching area 2-1 and the blocking structure 4 to form the etching shielding layer 5. Figure 20 ​As shown, the substrate 2 has an auxiliary shielding structure 8 on the side near the encapsulation layer 3. The etched shielding layer 5 covers the auxiliary shielding structure 8, and the auxiliary shielding structure 8 covers the etched area 2-1 and is spaced apart from the blocking structure 4. The auxiliary shielding structure 8 includes a first planarization layer 8-1, a second planarization layer 8-2 and a pixel definition layer 8-3 stacked together. The first planarization layer 8-1 is disposed near the substrate 2.

[0068] like Figure 20 As shown, in addition to the etched shielding layer 5, an auxiliary shielding structure 8 can be added to further improve the acid blocking effect. The auxiliary shielding structure 8 can be fabricated using the internal film layer of the display panel 1. For example, the auxiliary shielding structure 8 includes a first planarization layer 8-1, a second planarization layer 8-2, and a pixel definition layer 8-3 stacked together, made of a material such as PR adhesive, which is resistant to acid corrosion. The auxiliary shielding structure 8 is spaced apart from the blocking structure 4 to avoid interfering with the fabrication of the blocking structure 4.

[0069] In some embodiments, a buffer layer 14 is provided on the side of the substrate 2 near the encapsulation layer 3 to improve the stability of the overall structure.

[0070] In some embodiments, the driving circuit layer includes a first electrode layer, which may include the source and drain of each transistor in the display area. The source electrodes are electrically connected to the source electrode connection portion, and the drain electrodes are electrically connected to the drain electrode connection portion. The first electrode layer may include metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, etc. For example, the first electrode layer may be a single layer or multiple layers made of metal, such as Mo / Al / Mo or Ti / Al / Ti.

[0071] In some embodiments, the light-emitting device layer includes an anode layer, a cathode layer, a light-emitting functional layer, an electron transport layer, a hole transport layer, and a hole injection layer, wherein the anode layer is electrically connected to the drain of the thin-film transistor array layer; the cathode layer is made of a material with a low work function, which can improve the efficiency of electron injection and reduce the Joule heat generated when the display panel 1 is working, thereby improving the lifespan of the device.

[0072] In some embodiments, the light-emitting functional layer is used for emitting light. Multiple light-emitting layers are provided to improve the brightness of the OLED device. The light-emitting layer may include a host material and a guest material doped in the host material. The doping ratio of the guest material in the light-emitting layer is 1% to 20%. Within this doping ratio range, on the one hand, the host material of the light-emitting layer can effectively transfer exciton energy to the guest material to excite the guest material to emit light; on the other hand, the host material "dilutes" the guest material, effectively improving fluorescence quenching caused by intermolecular collisions and energy collisions in the guest material, thereby improving luminous efficiency and device lifetime. In an exemplary embodiment, the doping ratio refers to the ratio of the mass of the guest material to the mass of the light-emitting layer, i.e., mass percentage. In an exemplary embodiment, the host material and the guest material can be deposited together using a multi-source evaporation process, so that the host material and the guest material are uniformly dispersed in the light-emitting layer. The doping ratio can be controlled by controlling the evaporation rate of the guest material or by controlling the ratio of the evaporation rates of the host material and the guest material during the evaporation process.

[0073] In a second aspect, this application provides a display panel 1, which is obtained by etching a display motherboard as described in any of the above embodiments using a selective laser etching process.

[0074] The display panel 1 has good stability, good display function, and long service life.

[0075] In some embodiments, such as Figures 2 to 11 As shown, the selective laser etching process includes: attaching a protective film 9 to the side of the display motherboard away from the substrate 2; performing a patterning process on the protective film 9 to form a first pattern; attaching an acid-resistant film 10 to the side of the protective film 9 away from the substrate 2; performing laser modification on the substrate 2; attaching the display motherboard to an auxiliary plate 11, with the acid-resistant film 10 positioned close to the auxiliary plate 11; performing chemical etching on the substrate 2; separating the display motherboard from the auxiliary plate 11; removing the acid-resistant film 10 from the display motherboard; removing a portion of the protective film 9 from the display motherboard according to the first pattern; and removing the etching shielding layer 5 located in the etching region 2-1 by laser to divide the display motherboard to obtain the display panel 1.

[0076] The "patterning process" described in this application's embodiments includes processes such as photoresist coating, mask exposure, development, etching, and photoresist stripping for metallic, inorganic, or transparent conductive materials; and for organic materials, it includes processes such as organic material coating, mask exposure, and development. Deposition can be performed using any one or more of sputtering, evaporation, and chemical vapor deposition; coating can be performed using any one or more of spraying, spin coating, and inkjet printing; and etching can be performed using any one or more of dry and wet etching, without limitation. The first pattern in this application's embodiments is the pattern that the display motherboard needs to be segmented.

[0077] A third aspect of this application provides a display device including a display panel as described in any of the above embodiments.

[0078] The display device can be a product or component with display function, such as a mobile phone, tablet computer, laptop computer, digital camera, or navigator. This display device has good display effect and strong stability.

[0079] Those skilled in the art should understand that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of this application (including the claims) is limited to these examples; within the framework of this application, the technical features of the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations of different aspects of the embodiments of this application as described above, which are not provided in the details for the sake of brevity.

[0080] In the embodiments of this application, "film" and "layer" can be interchanged. For example, sometimes "conductive layer" can be replaced with "conductive film". Similarly, sometimes "insulating film" can be replaced with "insulating layer". The scale of the drawings in the embodiments of this application can be used as a reference in actual processes, but is not limited thereto. For example, the aspect ratio of the channel, the thickness and spacing of each film layer can be adjusted according to actual needs. The number of pixels in the array substrate and the number of sub-pixels in each pixel are not limited to the quantities shown in the figures. The drawings described in the embodiments of this application are only structural schematic diagrams, and one method in the embodiments of this application is not limited to the shapes or values ​​shown in the drawings.

[0081] In the embodiments of this application, triangles, rectangles, trapezoids, pentagons, or hexagons are not strictly defined, but can be approximate triangles, rectangles, trapezoids, pentagons, or hexagons, etc., and may have some small deformations due to tolerances, and may have chamfers, curved edges, and other deformations.

[0082] Furthermore, given that details have been set forth to describe exemplary embodiments of this application, it will be apparent to those skilled in the art that embodiments of this application may be practiced without these details or with variations thereof. Therefore, these descriptions should be considered illustrative rather than restrictive.

[0083] Additionally, to simplify the description and discussion, and to avoid obscuring the embodiments of this application, well-known power / ground connections to other components may or may not be shown in the provided drawings. Furthermore, the apparatus may be illustrated in block diagram form to avoid obscuring the embodiments of this application, and this also takes into account the fact that the details of implementation of these block diagram apparatuses are highly dependent on the platform on which the embodiments of this application will be implemented (i.e., these details should be entirely within the understanding of those skilled in the art). While specific details have been set forth to describe exemplary embodiments of this application, it will be apparent to those skilled in the art that the embodiments of this application may be implemented without these specific details or with variations thereof. Therefore, these descriptions should be considered illustrative rather than restrictive.

[0084] Although this application has been described in conjunction with specific embodiments thereof, many substitutions, modifications, and variations of these embodiments will be apparent to those skilled in the art from the foregoing description. The embodiments of this application are intended to cover all such substitutions, modifications, and variations falling within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the embodiments of this application should be included within the protection scope of this application.

Claims

1. A display motherboard, characterized in that, The device includes multiple display panels, each display panel comprising a substrate, a driving circuit layer, a light-emitting device layer, and an encapsulation layer stacked together. A blocking structure is provided on the side of the substrate near the encapsulation layer, and the blocking structure is arranged around the display panel. The substrate includes an etching region for selective laser etching, the etching region being located on the outer side of the display panel; an etching shielding layer is provided on the side of the substrate near the encapsulation layer, the etching shielding layer being located on the outer periphery of the display panel and covering the etching region and the corresponding blocking structure.

2. The display motherboard according to claim 1, characterized in that, The barrier structure includes a first barrier wall, which is spaced apart from the encapsulation layer, and the etched shielding layer covers the first barrier wall.

3. The display motherboard according to claim 2, characterized in that, The barrier structure further includes a second barrier wall, which abuts against the encapsulation layer and is spaced apart from the first barrier wall, and the etched shielding layer covers the second barrier wall.

4. The display motherboard according to claim 1, characterized in that, The etched shielding layer covers the area between adjacent display panels.

5. The display motherboard according to claim 1, characterized in that, A touch layer is provided on the side of the encapsulation layer away from the substrate. The touch layer extends outward from the plane of the substrate toward the display panel and covers the etched area and the blocking structure to form the etched shielding layer.

6. The display motherboard according to claim 1, characterized in that, The encapsulation layer includes a first inorganic film layer, a first organic film layer, and a second inorganic film layer stacked together, with the first inorganic film layer disposed close to the substrate.

7. The display motherboard according to claim 1, characterized in that, A touch layer is provided on the side of the encapsulation layer away from the substrate, and a second organic film layer is provided on the side of the touch layer away from the substrate. The second organic film layer extends outward along the plane of the substrate toward the display panel and covers the etched area and the blocking structure to form the etch shielding layer.

8. The display motherboard according to claim 7, characterized in that, The thickness of the second organic film layer is 6 μm to 18 μm.

9. The display motherboard according to claim 1, characterized in that, The substrate has an auxiliary shielding structure on the side near the encapsulation layer. The etched shielding layer covers the auxiliary shielding structure, and the auxiliary shielding structure covers the etched area and is spaced apart from the blocking structure. The auxiliary shielding structure includes a first planarization layer, a second planarization layer, and a pixel definition layer stacked together. The first planarization layer is disposed near the substrate.

10. A display panel, characterized in that, The display panel is obtained by etching the display motherboard as described in any one of claims 1-9 using a selective laser etching process.

11. The display panel according to claim 10, characterized in that, The selective laser etching process includes: attaching a protective film to the side of the display motherboard away from the substrate; performing a patterning process on the protective film to form a first pattern; attaching an acid-resistant film to the side of the protective film away from the substrate; performing laser modification on the substrate; attaching the display motherboard to an auxiliary board, with the acid-resistant film positioned close to the auxiliary board; performing chemical etching on the substrate; separating the display motherboard from the auxiliary board; removing the acid-resistant film from the display motherboard; removing a portion of the protective film from the display motherboard according to the first pattern; and removing the etching shielding layer located within the etching area using a laser to divide the display motherboard into the display panel.

12. A display device, characterized in that, Includes the display panel as described in claim 10 or 11.