Semiconductive shielding material, method for its production and use, high voltage cable

Abstract

The application relates to a kind of semi-conductive shielding materials and its preparation method and application, high-voltage cable, relate to the field of polymer materials, including the following components by weight: base resin 55-65 parts, carbon black 25-35 parts, COF material 1-5 parts, antioxidant 1-3 parts, dispersing agent 1-2 parts;The COF material is TpPa class covalent organic framework material, and the TpPa class covalent organic framework material is obtained by solvothermal reaction with three ketone hydroxyl functional group-containing aldehyde monomer and aromatic diamine monomer as raw materials.The application introduces a certain proportion of specific COF material, which forms a stable synergistic composite structure with carbon black at the microscale, maintains high conductivity, realizes the ordered regulation of microstructure, forms a more stable and uniform network distribution of conductive phase in the polymer matrix, and thus provides a new technical path for the development of high-performance and high-reliability semi-conductive shielding materials.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of high molecular materials, in particular to a kind of semiconductive shielding material and its preparation method and application, high voltage cable. BACKGROUND

[0002] High voltage cable as the key equipment of high voltage transmission is the core electrical equipment of city transmission, across river, offshore transmission, and is mainly composed of conductive wire core, semiconductive shielding layer, insulating layer, metal shielding layer and sheath and so on.As the key part of high voltage cable structure, the main function of semiconductive shielding layer is to eliminate the air gap between conductor and insulating layer and to evenly distribute the electric field on the surface of conductive wire core.Therefore, the shielding layer not only needs to have stable volume resistivity and mechanical properties, but also should meet the thermal stability and structural uniformity during long-term processing.

[0003] The semiconductive shielding material is mainly obtained by melt blending of high molecular matrix resin, conductive carbon black and processing aid.The most widely used conductive filler is acetylene black or furnace carbon black, which realizes the required conductivity by forming a connected conductive path in the polymer matrix.Due to the large specific surface area and strong agglomeration of carbon black particles, large-scale agglomerates are easily formed during melt processing, resulting in local carbon black enrichment or loss.This uneven dispersion can cause the resistivity of the shielding material to fluctuate, the mechanical properties to decrease, and melt rupture, die build-up or even scorching to occur under high temperature and high shear conditions, which seriously affects the manufacturing stability and operation reliability of the cable.

[0004] Improvement of carbon black dispersion is a key factor to ensure the uniformity of material conductivity and thermal stability.The traditional method mainly uses amide, ester and small molecule surfactants (such as ethylene bis-stearamide) as carbon black dispersion aids.However, due to the limited interaction between the aid and carbon black, and the physical adsorption effect, the aid is prone to migration, volatilization or failure at high temperature, and cannot achieve long-term stable dispersion of carbon black agglomerate structure.In addition, the existing carbon black dispersion method cannot effectively solve the problems of poor interfacial adhesion and poor continuity of conductive path at microscale.Therefore, it is urgent to develop a conductive filler that can achieve good dispersion and good conductivity, and improve the electrical-mechanical comprehensive performance and processing stability of the shielding material. SUMMARY

[0005] To solve the above problems, the present application provides a kind of semiconductive shielding material and its preparation method and application, high voltage cable.

[0006] In the first aspect, the present application provides a kind of semiconductive shielding material, including the following components by weight:

[0007] Base resin 55-65 parts, carbon black 25-35 parts, COF material 1-5 parts, antioxidant 1-3 parts, dispersant 1-2 parts;

[0008] The COF material is a TpPa type covalent organic framework material, which is obtained by solvothermal reaction of an aldehyde monomer containing three ketone hydroxyl functional groups and an aromatic diamine monomer.

[0009] Further, the components include the following weight parts:

[0010] The base resin is 62 parts, carbon black is 29 parts, the COF material is 4 parts, the antioxidant is 3 parts, and the dispersant is 2 parts.

[0011] Further, the COF material includes at least one of a first TpPa type covalent organic framework material, a second TpPa type covalent organic framework material, and a third TpPa type covalent organic framework material;

[0012] The chemical structural formula of the reaction monomer raw material of the first TpPa type covalent organic framework material is as follows:

[0013] ;

[0014] The chemical structural formula of the reaction monomer raw material of the second TpPa type covalent organic framework material is as follows:

[0015] ;

[0016] The chemical structural formula of the reaction monomer raw material of the third TpPa type covalent organic framework material is as follows:

[0017] .

[0018] Further, the preparation of the COF material includes the following process:

[0019] The aldehyde monomer containing three ketone hydroxyl functional groups and the aromatic diamine monomer are dissolved in an organic solvent, and then solvothermal reaction is carried out in a closed container under acidic conditions. After the reaction is completed, centrifugation, washing and drying are carried out to obtain the COF material;

[0020] The molar ratio of the aldehyde monomer containing three ketone hydroxyl functional groups and the aromatic diamine monomer is 1: (1-2);

[0021] The condition parameters of the solvothermal reaction include: the reaction temperature is 120-150℃, and the reaction time is 72-120 hours;

[0022] The aldehyde monomer containing three ketone hydroxyl functional groups includes at least one of 1,3,5-trihydroxyphenone and trimethoxy-substituted triketone;

[0023] The aromatic diamine monomer includes at least one of p-phenylenediamine, phenylenediamine, and 2,5-dimethoxy-p-phenylenediamine;

[0024] The organic solvent includes at least one of N,N-dimethylacetamide, N,N-dimethylformamide, N-methylpyrrolidone, n-butanol, isobutyl alcohol, and ethanol.

[0025] Further, the base resin includes at least one of ethylene-butyl acrylate copolymer, ethylene-ethyl acrylate copolymer, and ethylene-vinyl acetate copolymer;

[0026] And / or, the antioxidant includes at least one of phenolic antioxidant, amine antioxidant, and thioether antioxidant;

[0027] And / or, the dispersant includes at least one of non-ionic surfactant, polyvinylpyrrolidone, and amide surfactant;

[0028] And / or, the physical and chemical property parameters of the carbon black include: DBP absorption value of 100-160 mL / 100 g, and ash content of less than 0.2 wt%.

[0029] Further, the phenolic antioxidant includes at least one of antioxidant 300, antioxidant 1010, and antioxidant 2246, the non-ionic surfactant includes fatty acid ester surfactant, and the amide surfactant includes ethylene bis-stearamide.

[0030] In a second aspect, the present application provides a preparation method of the semi-conductive shielding material according to any one of the first aspect, the preparation method including the following steps:

[0031] Obtaining a COF material;

[0032] After stirring and mixing the COF material, base resin, carbon black, antioxidant, and dispersant, melt blending is performed in a twin-screw extruder to obtain a mixture;

[0033] The mixture is subjected to heat pressing crosslinking, and then cooled and granulated to obtain the semi-conductive shielding material.

[0034] Further, the working condition parameters of the melt blending include: temperature of 120-150°C; rotation speed of 30-80 rpm; and time of 5-15 min;

[0035] And / or, the working condition parameters of the heat pressing crosslinking include: temperature of 150-180°C, pressure of 5-15 MPa, and time of 5-15 min.

[0036] In a third aspect, the present application provides a use of the semiconductive shielding material according to the first aspect or the semiconductive shielding material prepared by the preparation method according to the second aspect in the preparation of a high-voltage cable.

[0037] In a fourth aspect, the present application provides a high-voltage cable comprising the semiconductive shielding material according to the first aspect or the semiconductive shielding material prepared by the preparation method according to the second aspect.

[0038] The above technical solutions provided by the embodiments of the present application have at least the following advantages compared with the prior art:

[0039] The embodiments of the present application provide a semiconductive shielding material, a preparation method and application thereof, and a high-voltage cable. By introducing a proper proportion of a specific COF material (covalent organic framework material), a stable synergistic composite structure is formed with carbon black at a microscale, the microstructure is orderly adjusted while maintaining high conductivity, a more stable and uniform network distribution of the conductive phase is formed in the polymer matrix, the conductivity continuity, interface adhesion performance and processing thermal stability of the material are improved, and thus a new technical path is provided for the development of a high-performance and high-reliability semiconductive shielding material. Specifically:

[0040] Firstly, a certain mass fraction of a specific covalent organic framework material (COF) is introduced into the semiconductive shielding material. The material has a regular two-dimensional sheet structure, high thermal stability and excellent interface regulation ability. By synergistically constructing a composite structure with conductive carbon black, the configuration and distribution of the conductive phase can be optimized at a microscale, the dispersion uniformity and network connectivity of carbon black in the matrix are effectively improved, a more stable and continuous conductive path is formed, and a new technical path is provided for the development of a high-performance and high-reliability semiconductive shielding material.

[0041] Secondly, the specific COF material described above is used as a structure aid, which can coat carbon black micelles through its high specific surface area and layered skeleton, inhibit the interface migration and agglomeration behavior of the carbon black micelles, and improve the microstructure stability of the semiconductive material during the processing process. At the same time, its excellent thermal inertia and chemical stability endow the material with stronger thermal aging and interface durability, and the material can still maintain good electrical performance consistency under high-temperature extrusion and long-term service conditions. This technology breaks through the limitations of traditional surface active dispersants (such as stearate) in conductive performance regulation and thermal stability, and expands the design ideas of high-performance semiconductive shielding materials. BRIEF DESCRIPTION OF DRAWINGS

[0042] The accompanying drawings, which are incorporated into and form a part of the specification, illustrate an embodiment consistent with the present application and, together with the description, serve to explain the principles of the application.

[0043] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, for those skilled in the art, other drawings can also be obtained based on these drawings without any creative effort.

[0044] Figure 1 The preparation method of the semiconductive shielding material in the embodiments of the present application is shown in the schematic diagram. DETAILED DESCRIPTION

[0045] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without any creative effort fall within the protection scope of the present application.

[0046] Unless otherwise specifically indicated, all the various raw materials, reagents, instruments and equipment and the like used in the present application can be purchased from the market or can be prepared by the existing methods.

[0047] The present application will be further described in conjunction with specific examples. It should be understood that these examples are only used to illustrate the present application and not used to limit the scope of the present application. The experimental methods not specified in the following examples are generally determined according to the national standards. If there is no corresponding national standard, the international standard, the conventional condition or the condition suggested by the manufacturer is used.

[0048] The main raw material information involved in the following examples and comparative examples is as follows:

[0049] EBA: ethylene-butyl acrylate copolymer, purchased from Arkema, item number 17BA07;

[0050] EEA: ethylene-ethyl acrylate copolymer, purchased from Arkema, item number 4700;

[0051] Carbon black: purchased from Cabot, DBP absorption value is 100-160 mL / 100g, the weight percentage content of ash is less than 0.2wt%;

[0052] Tp: 1,3,5-trihydroxyphenone;

[0053] PVP: polyvinylpyrrolidone;

[0054] PDA: p-phenylenediamine.

[0055] Example 1

[0056] This example provides a semi-conductive shielding material, which comprises the following components by weight:

[0057] 65 parts of base resin (specifically EBA), 25 parts of carbon black, 5 parts of COF material (specifically first TpPa-based covalent organic framework material), 3 parts of antioxidant (specifically antioxidant 300), and 2 parts of dispersant (specifically PVP);

[0058] The chemical structure formula of the reaction monomer raw material of the first TpPa-based covalent organic framework material is as follows:

[0059] .

[0060] The preparation method of the above semi-conductive shielding material is as shown in Figure 1 , comprising the following steps:

[0061] (1) Preparation of COF material: 1,3,5-trihydroxybenzophenone (Tp) and p-phenylenediamine (PDA) are dissolved in a mixed solvent of N,N-dimethylacetamide (DMAc) and ethanol (volume ratio 3:1) at a molar ratio of 1:1, and 6 mol / L glacial acetic acid with a volume of about 10% of the total volume of the solvent is added as a catalyst in the reaction system, and the solvothermal reaction is carried out at 120°C for 72h, and after washing, it is dried at 60°C for 12h to obtain the first TpPa-based covalent organic framework material;

[0062] (2) Melt blending: The prepared first TpPa-based covalent organic framework material is mixed uniformly with carbon black, base resin, antioxidant, and dispersant, and then put into a 150°C double screw extruder for melt blending, the rotation speed is 30 rpm, and the melt blending time is 5 min, to obtain the blended mixture;

[0063] (3) Hot pressing crosslinking: The blended mixture is hot pressed at 180°C and 5MPa for 5min to obtain the hot-pressed material;

[0064] (4) Granulation: The hot-pressed material is cooled to room temperature, cut into small pieces, and granulated by a granulator to obtain the semi-conductive shielding material.

[0065] Example 2

[0066] This example provides a semi-conductive shielding material, which comprises the following components by weight:

[0067] 60 parts of base resin (specifically EEA), 35 parts of carbon black, 2 parts of COF material (specifically second TpPa-based covalent organic framework material), 2 parts of antioxidant (specifically antioxidant 1010), and 1 part of dispersant (specifically EBS);

[0068] The chemical structure of the reaction monomer raw material of the second TpPa type covalent organic framework material is as follows:

[0069] .

[0070] The preparation method of the semi-conductive shielding material includes the following steps:

[0071] (1) Preparation of COF material: 1,3,5-trihydroxybenzophenone (Tp) and phenylenediamine (BD) are dissolved in a mixed solvent of N,N-dimethylformamide (DMF) and n-butanol (volume ratio 3:1) at a molar ratio of 1:2, and 6 mol / L glacial acetic acid with a volume of about 15% of the total volume of the solvent is added as a catalyst in the reaction system, and the solvothermal reaction is carried out at 150℃ for 100h, and after washing, it is dried at 60℃ for 12h to obtain the second TpPa type covalent organic framework material;

[0072] (2) Melt blending: The prepared second TpPa type covalent organic framework material is mixed uniformly with carbon black, matrix resin, antioxidant, and dispersant, and then put into a 120℃ double screw extruder for melt blending, the rotation speed is 80rpm, and the melt blending time is 15min to obtain the blended mixture;

[0073] (3) Hot pressing crosslinking: The blended mixture is hot pressed at 150℃ and 15MPa for 15min to obtain the hot pressed material;

[0074] (4) Granulation: The hot pressed material is cooled to room temperature, cut into small pieces, and granulated by a granulator to obtain the semi-conductive shielding material.

[0075] Example 3

[0076] The semi-conductive shielding material provided in this example includes the following components by weight:

[0077] 62 parts of matrix resin (specifically EBA), 29 parts of carbon black, 4 parts of COF material (specifically third TpPa type covalent organic framework material), 3 parts of antioxidant (specifically antioxidant 300), and 2 parts of dispersant (specifically PVP);

[0078] The chemical structure of the reaction monomer raw material of the third TpPa type covalent organic framework material is as follows:

[0079] .

[0080] The preparation method of the semi-conductive shielding material includes the following steps:

[0081] (1) Preparation of COF material: 1,3,5-trihydroxybenzophenone (Tp) and 2,5-dimethoxy-p-phenylenediamine (PDA) are dissolved in a mixed solvent of N-methylpyrrolidone (NMP) and isobutyl alcohol (volume ratio 1:1) at a molar ratio of 1:1.5, and 6 mol / L glacial acetic acid with a volume of about 15% of the total volume of the solvent is added as a catalyst in the reaction system, and a solvothermal reaction is carried out at 140°C for 120h, and after washing, drying is carried out at 60°C for 12h to obtain a third TpPa type covalent organic framework material;

[0082] (2) Melt blending: The prepared third TpPa type covalent organic framework material is mixed uniformly with carbon black, matrix resin, antioxidant and dispersant, and then is put into a 130°C double screw extruder for melt blending, the rotation speed is 70rpm, and the melt blending time is 9min to obtain a blended mixture;

[0083] (3) Hot-pressing crosslinking: The blended mixture is hot-pressed at 155°C and 12MPa for 12min to obtain a hot-pressed material;

[0084] (4) Granulation: The hot-pressed material is cooled to room temperature, cut into small pieces, and granulated by a granulator to obtain a semi-conductive shielding material.

[0085] Example 4

[0086] The example provides a semi-conductive shielding material, which comprises the following components by weight:

[0087] 62 parts of matrix resin (specifically EBA), 29 parts of carbon black, 4 parts of COF material (specifically third TpPa type covalent organic framework material), 3 parts of antioxidant (specifically antioxidant 300) and 2 parts of dispersant (specifically PVP);

[0088] The chemical structure formula of the reaction monomer raw material of the third TpPa type covalent organic framework material is as follows:

[0089] .

[0090] The preparation method of the semi-conductive shielding material comprises the following steps:

[0091] (1) Preparation of COF material: 1,3,5-trihydroxybenzophenone (Tp) and 2,5-dimethoxy-p-phenylenediamine (PDA) are dissolved in a mixed solvent of N-methylpyrrolidone (NMP) and isobutyl alcohol (volume ratio 1:1) at a molar ratio of 1:1.5, and 6 mol / L glacial acetic acid with a volume of about 15% of the total volume of the solvent is added as a catalyst in the reaction system, and a solvothermal reaction is carried out at 140°C for 120h, and after washing, drying is carried out at 60°C for 12h to obtain a third TpPa type covalent organic framework material;

[0092] (2) Melt blending: the prepared third TpPa-based covalent organic framework material is mixed with carbon black, matrix resin, antioxidant and dispersant, and then is put into a 125°C double screw extruder for melt blending at a speed of 75 rpm for 11 min to obtain a blended mixture;

[0093] (3) Hot-pressing crosslinking: the blended mixture is hot-pressed at 162°C and 12 MPa for 12 min to obtain a hot-pressed material;

[0094] (4) Granulation: the hot-pressed material is cooled to room temperature, is cut into small pieces, and is granulated by a granulator to obtain a semi-conductive shielding material.

[0095] Example 5

[0096] The example provides a semi-conductive shielding material, which comprises the following components by weight:

[0097] 55 parts of matrix resin (specifically EBA), 25 parts of carbon black, 1 part of COF material (specifically first TpPa-based covalent organic framework material), 1 part of antioxidant (specifically antioxidant 300) and 1 part of dispersant (specifically PVP).

[0098] The preparation method of the semi-conductive shielding material is the same as that of Example 1.

[0099] Comparative Example 1

[0100] The example provides a semi-conductive shielding material and a preparation method thereof, which are different from Example 2 only in that:

[0101] (1) The weight fraction of the COF material is 0.5 parts (i.e., the amount of the COF material added is too small).

[0102] Comparative Example 2

[0103] The example provides a semi-conductive shielding material and a preparation method thereof, which are different from Example 3 only in that:

[0104] (1) The COF material is adjusted to a mixture composed of 1,3,5-trihydroxyphenone (Tp) and 2,5-dimethoxy-p-phenylenediamine (PDA) with a molar ratio of 1:1.5 (i.e., the COF material is not synthesized).

[0105] Comparative Example 3

[0106] The example provides a semi-conductive shielding material and a preparation method thereof, which are different from Example 3 only in that:

[0107] (1) The weight fraction of the COF material is 8 parts (i.e., the amount of the COF material added is too large).

[0108] Comparative Example 4

[0109] The example provides a semi-conductive shielding material and a preparation method thereof, which is only different from example 3 in that:

[0110] (1) The COF material is adjusted to COF-LZU1, and the CAS number thereof is 1242082-12-7; (that is, the COF material is a non-TpPa type covalent organic framework material).

[0111] Test example

[0112] The semi-conductive shielding materials obtained in the above examples and comparative examples are subjected to mechanical and conductive performance tests, and the test method is as follows: the semi-conductive shielding materials in the examples and comparative examples are respectively prepared into plates by a hot pressing forming process, which are used to test and characterize their structures and performances; the mechanical properties and conductive properties of the plates are tested according to GB / T 31489.2 standard and GB / T 3048.3 standard respectively, and the test results are shown in Table 1.

[0113] As can be seen from Table 1:

[0114] Compared with comparative examples 1-4, examples 1-5 have higher tensile strength, elongation at break, room temperature (23℃) resistivity and high temperature (90℃) resistivity, the tensile strength is 14.3-18.5 MPa, the elongation at break is 255.7-295.3%, the 23℃ resistivity is 11.7-18.4 Ω·cm, and the 90℃ resistivity is 89.4-130.8 Ω·cm.

[0115] Compared with comparative example 1, the addition amount of the second TpPa type covalent organic framework material in example 2 is increased from 0.5 parts to 5 parts, which effectively strengthens its structural role in the dispersion regulation of carbon black. Although a small amount of COF material is introduced in comparative example 2, due to insufficient addition amount, an complete lamellar auxiliary network cannot be formed, and the carbon black still exists in a certain degree of agglomeration and interruption of conductive path, which leads to limited improvement of mechanical and electrical properties. The test results show that the tensile strength of example 2 is 16.6 MPa, which is increased by 34.1% compared with that of comparative example 2 (13.1 MPa); the elongation at break is 265.1%, which is increased by 31.8% compared with that of comparative example 2 (201.2%); and the 23℃ and 90℃ resistivities are 13.8 Ω·cm and 97.2 Ω·cm respectively, which are decreased by 51.6% and 61.4% respectively compared with those of comparative example 2.

[0116] Compared with Comparative Example 2, in Example 3, the β-ketimine type covalent organic framework structure (the third TpPa type covalent organic framework material) between Tp and PDA was first constructed by a solvothermal reaction, and then it was synergistically compounded with carbon black and a matrix resin, so as to effectively control the spatial distribution and interface stability of the conductive phase. In Comparative Example 3, although the same molar ratio of Tp and PDA monomers was physically blended, no stable skeleton structure was formed, and the system did not form a stable skeleton structure, nor did it have the ability of layer support and limited dispersion of COF, so it was difficult to achieve effective coating and network connection of carbon black. The test results show that the tensile strength of Example 3 is 18.5 MPa, which is increased by 37.6% compared with Comparative Example 3 (13.4 MPa), and the elongation at break is 295.3%, which is increased by 18.9%; and the resistivity at 90°C and 23°C is 89.4 Ω·cm and 11.7 Ω·cm, respectively, which is decreased by 65.2% and 38.4% compared with 256.8 Ω·cm and 19.0 Ω·cm of Comparative Example 3, respectively.

[0117] Compared with Comparative Example 3, in Example 3, when the COF material addition amount exceeds 8 parts, due to the enhanced tendency of agglomeration in the matrix caused by high filling ratio, the dispersion of fillers is uneven and the interface structure is defective, thereby weakening the reinforcing effect, and the tensile strength and elongation at break are decreased to 9.9 MPa and 189.5%, respectively. At the same time, the introduction of high content of COF will dilute the carbon black conductive phase, block the conductive path, increase the interface resistance, and cause the resistivity at 90°C and 23°C to increase to 298.7 Ω·cm and 30.1 Ω·cm, respectively.

[0118] Compared with Comparative Example 4, in Example 3, the rigid structure of COF-LZU1 may cause the embrittlement of the material at high filling, and the tensile strength and elongation at break are 12.0 MPa and 221.6%, respectively; at the same time, COF-LZU1 lacks π conjugated structure and conductive network bridging ability, and the overall performance in resistivity reduction and conductive network construction is not as good as TpPa type COF, and the resistivity at 90°C and 23°C is 287.6 Ω·cm and 28.9 Ω·cm, respectively.

[0119] Various embodiments of the present application can take on a variety of scopes; it should be understood that a scope in the form of a range is described merely for the sake of convenience and brevity, and should not be construed as a rigid limitation of the scope of the present application; therefore, it should be considered that the range described has specifically disclosed all possible sub-ranges and single values within that range. For example, it should be considered that a range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integral) within the indicated range.

[0120] The foregoing is considered as illustrative only of the principles of the application. Numerous modifications and adaptations will be apparent to those skilled in the art in view of the above descriptions of the embodiments. Thus, the scope of the application should be determined by the broadest interpretation of the principles disclosed herein and their equivalents, and will not be restricted to the described embodiments.

Claims

1. A semiconductive shielding material, characterized in that, Components comprising the following weight parts: Base resin 55-65 parts, conductive carbon black 25-35 parts, COF material 1-5 parts, antioxidant 1-3 parts, dispersant 1-2 parts; The COF material is a TpPa type covalent organic framework material, and the TpPa type covalent organic framework material is obtained by solvothermal reaction of an aldehyde monomer containing three ketone hydroxyl functional groups and an aromatic diamine monomer as raw materials; The base resin is at least one of ethylene-butyl acrylate copolymer, ethylene-ethyl acrylate copolymer and ethylene-vinyl acetate copolymer; The COF material comprises at least one of a first TpPa type covalent organic framework material, a second TpPa type covalent organic framework material and a third TpPa type covalent organic framework material; The chemical structural formula of the reaction monomer raw material of the first TpPa type covalent organic framework material is as follows: ； The chemical structural formula of the reaction monomer raw material of the second TpPa type covalent organic framework material is as follows: ； The chemical structural formula of the reaction monomer raw material of the third TpPa type covalent organic framework material is as follows: 。 2. The semiconductive shielding material of claim 1, wherein, Components comprising the following weight parts: Base resin 62 parts, conductive carbon black 29 parts, COF material 4 parts, antioxidant 3 parts, dispersant 2 parts.

3. The semiconductive shielding material according to claim 1 or 2, characterized in that, The preparation of the COF material comprises the following processes: The aldehyde monomer containing three ketone hydroxyl functional groups and the aromatic diamine monomer are dissolved in an organic solvent, and then solvothermal reaction is carried out in a closed container under acidic conditions, and after the reaction is completed, centrifugation, washing and drying are carried out to obtain the COF material; The molar ratio of the aldehyde monomer containing three ketone hydroxyl functional groups and the aromatic diamine monomer is 1: (1-2); The condition parameters of the solvothermal reaction include: reaction temperature 120-150℃, reaction time 72-120 hours; The aldehyde monomer containing three ketone hydroxyl functional groups is tri-aldehyde phloroglucinol; The aromatic diamine monomer comprises at least one of p-phenylenediamine, 4,4'-diaminobiphenyl and 2,5-dimethyl-p-phenylenediamine; The organic solvent comprises at least one of N,N-dimethylacetamide, N,N-dimethylformamide, N-methylpyrrolidone, n-butanol, isobutyl alcohol and ethanol.

4. The semiconductive shielding material according to claim 1 or 2, characterized in that, The antioxidant comprises at least one of a phenolic antioxidant, an amine antioxidant and a thioether antioxidant; And / or, the dispersant comprises at least one of a non-ionic surfactant, polyvinylpyrrolidone and an amide surfactant; And / or, the physical and chemical property parameters of the conductive carbon black include: DBP absorption value 100-160mL / 100g, weight percentage content of ash less than 0.2wt%.

5. The semiconductive shielding material of claim 4, wherein, The phenolic antioxidant comprises at least one of antioxidant 300, antioxidant 1010 and antioxidant 2246, the non-ionic surfactant comprises a fatty acid ester surfactant, and the amide surfactant comprises ethylene bis-stearamide.

6. A method for producing the semiconductive shielding material according to any one of claims 1 to 5, characterized in that, The preparation method of the semi-conductive shielding material comprises the following steps: Obtain the COF material; The COF material, base resin, conductive carbon black, antioxidant and dispersant are mixed by stirring and then fed into a twin-screw extruder for melt blending to obtain a mixture; The mixture is subjected to heat-press crosslinking, followed by cooling and granulation to obtain the semi-conductive shielding material.

7. The method of producing a semiconductive shielding material according to claim 6, wherein The working condition parameters for the melt blending include a temperature of 120-150℃, a rotation speed of 30-80rpm and a time of 5-15min. And / or, the working condition parameters for the heat-press crosslinking include a temperature of 150-180℃, a pressure of 5-15MPa and a time of 5-15min.

8. Use of the semi-conductive shielding material according to any one of claims 1-5 or prepared by the preparation method according to any one of claims 6-7 in the preparation of high-voltage cables.

9. A high voltage cable, characterized by The semi-conductive shielding material according to any one of claims 1-5 or prepared by the preparation method according to any one of claims 6-7.

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