Cosolvent for beta-Ga2O3 crystal growth, application of cosolvent and crystal growth method

By using a mixture of bismuth oxide and boron oxide as a flux, the problems of high temperature requirements and long-term heat preservation in the growth of β-Ga2O3 crystals were solved, realizing an efficient, stable, low-carbon and environmentally friendly crystal growth process, reducing production costs and improving production efficiency.

CN121161401APending Publication Date: 2025-12-19GUANGDONG INST OF SEMICON IND TECH
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Patent Information

Application Number
CN202511313992.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-09-15
Publication Date
2025-12-19

AI Technical Summary

Technical Problem

Existing methods for growing β-Ga2O3 crystals suffer from problems such as long high-temperature requirements, long holding times, slow cooling rates, and the use of toxic substances, resulting in high production costs, low efficiency, and environmental unfriendliness.

Method used

A mixture of bismuth oxide and boron oxide is used as a flux. By controlling the molar ratio to be (0.5-2):(2-5), the melting temperature is reduced to below 1200°C. Heating is carried out in an air atmosphere, and a muffle furnace is used for efficient heating and rapid cooling to avoid gallium oxide decomposition and volatilization, thus simplifying the residue removal process.

Benefits of technology

This method achieves efficient and stable growth of β-Ga2O3 crystals, reduces production costs, increases heating and cooling rates, avoids the use of toxic substances, and ensures preparation quality and environmental safety.

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Abstract

The invention discloses a cosolvent for beta-Ga2O3 crystal growth, application of the cosolvent and a crystal growth method, the cosolvent for beta-Ga2O3 crystal growth comprises a mixture composed of bismuth oxide and boron oxide, and the molar ratio range of bismuth oxide to boron oxide is (0.5-2): (2-5). When the cosolvent is used for crystal growth of beta-Ga2O3, the melting temperature can be reduced to 1200 DEG C or below, and the purpose of low carbon is achieved; melting can be carried out in an air atmosphere; the method can be suitable for a relatively high heating rate of 50 DEG C / h to 200 DEG C / h, a relatively short heat preservation time of 3 h to 8 h and a relatively high cooling rate of 5 DEG C / h to 10 DEG C / h, so that the purposes of high efficiency and stability are achieved; and moreover, the cosolvent does not contain toxic auxiliaries such as lead oxide or fluoride, so that the influence on the health of an operator and the environment can be avoided.
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