Heat recovery control method and device for semiconductor waste gas treatment equipment

Abstract

The invention provides a heat recovery control method and device for semiconductor waste gas treatment equipment. The method comprises the steps that a first temperature value of a heat preservation and insulation layer and a second temperature value for purging a waste gas inlet are obtained; based on a comparison result of the first temperature value and a first temperature threshold value, the flow of nitrogen introduced into the gas cooling channel is controlled, and it is determined that the temperature of the heat preservation and insulation layer after flow control is smaller than the first temperature threshold value; based on the comparison result of the second temperature value and a second temperature threshold value, heating control is conducted on a heater in the gas cooling channel, and it is determined that the temperature of nitrogen for purging the waste gas inlet after heating control is larger than the second temperature threshold value. The gas cooling channel and the heat preservation and insulation layer are arranged on the outer wall of the reaction cavity, waste heat of the reaction cavity is absorbed through nitrogen and used for purging the gas inlet, closed-loop recovery and reutilization of energy are achieved, and equipment operation energy consumption is remarkably reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of control, in particular to a heat recovery control method and device of semiconductor waste gas treatment equipment. BACKGROUND

[0002] Based on the characteristics of semiconductor use, special gas needs to be treated in a high temperature environment, so the semiconductor waste gas equipment reaction cavity provides a high temperature environment for treating waste gas generated in the semiconductor process.

[0003] The existing waste gas treatment equipment reaction cavity uses water cooling to cool down, and the water cooling directly takes away the heat of the reaction cavity, resulting in that the heat of the reaction cavity is not fully utilized, and a large amount of heat energy resources is wasted. SUMMARY

[0004] The present application provides a heat recovery control method and device of semiconductor waste gas treatment equipment, to solve the defects that the existing waste gas treatment equipment reaction cavity uses water cooling to cool down, and the water cooling directly takes away the heat of the reaction cavity, resulting in that the heat of the reaction cavity is not fully utilized, and a large amount of heat energy resources is wasted, and improves the utilization rate of energy.

[0005] The present application provides a heat recovery control method of semiconductor waste gas treatment equipment, applied to a waste gas treatment equipment, the waste gas treatment equipment includes a reaction cavity, a gas cooling channel arranged on the inner side of the outer wall of the reaction cavity, and a heat preservation and insulation layer arranged on the outer side of the outer wall of the reaction cavity, the gas cooling channel is used for guiding nitrogen gas to flow from the bottom of the reaction cavity to the top of the outer wall in sequence, and the nitrogen gas after absorbing heat is purged to the gas inlet of the waste gas treatment equipment, the method comprises: Obtaining a first temperature value of the heat preservation and insulation layer and a second temperature value of purging the waste gas inlet; Based on the comparison result of the first temperature value and the first temperature threshold value, the nitrogen flow into the gas cooling channel is controlled, and the temperature of the heat preservation and insulation layer after flow control is determined to be less than the first temperature threshold value; Based on the comparison result of the second temperature value and the second temperature threshold value, the heater in the gas cooling channel is controlled to be heated, and the temperature of the nitrogen gas purging the waste gas inlet after heating control is determined to be greater than the second temperature threshold value.

[0006] According to the heat recovery control method of semiconductor waste gas treatment equipment provided by the present application, based on the comparison result of the first temperature value and the first temperature threshold value, the nitrogen flow into the gas cooling channel is controlled, which comprises: determining an increment of nitrogen flow in the gas cooling channel based on a difference between the initial temperature of the heat insulation layer and the first temperature threshold value, in a case where it is determined that the first temperature value is greater than the first temperature threshold value; increasing the nitrogen flow in the gas cooling channel based on the increment.

[0007] According to the heat recovery control method of the semiconductor waste gas treatment equipment provided by the application, the heating control of the heater in the gas cooling channel based on the comparison result of the second temperature value and the second temperature threshold value comprises: starting the heater and adjusting the power of the heater to heat the nitrogen in the gas cooling channel, in a case where it is determined that the second temperature value is less than the second temperature threshold value.

[0008] According to the heat recovery control method of the semiconductor waste gas treatment equipment provided by the application, the power of the heater is adjusted as follows: ; wherein, the power of the heater is, the density of the nitrogen is, the flow of the nitrogen is, the specific heat capacity of the nitrogen is, the correlation coefficient is, the second temperature value is.

[0009] According to the heat recovery control method of the semiconductor waste gas treatment equipment provided by the application, the flow of the nitrogen is: ; wherein, the deviation value of the second temperature value and the second temperature threshold value is, the proportional gain coefficient of the deviation value is, the differential gain coefficient of the change speed of the second temperature value is.

[0010] According to the heat recovery control method of the semiconductor waste gas treatment equipment provided by the application, the gas cooling channel is a multi-layer closed pipe type, and a plurality of mesh plates are embedded in the pipe of the gas cooling channel.

[0011] The application further provides a heat recovery control device of a semiconductor waste gas treatment equipment, which is applied to a waste gas treatment equipment, and the waste gas treatment equipment comprises a reaction cavity, a gas cooling channel arranged on the inner side of the outer wall of the reaction cavity, and a heat insulation layer arranged on the outer side of the outer wall of the reaction cavity. The gas cooling channel is used for guiding the nitrogen to flow from the bottom of the reaction cavity to the top of the outer wall in sequence through the inner side surface of the outer wall, and the nitrogen after absorbing heat is blown to the gas inlet of the waste gas treatment equipment. The device comprises: The temperature acquisition module is configured to acquire a first temperature value of the heat insulation layer and a second temperature value of the nitrogen gas used for purging the exhaust gas inlet; The first adjusting module is configured to control the nitrogen flow rate of the nitrogen gas flowing into the gas cooling channel based on a comparison result of the first temperature value and a first temperature threshold value, so as to determine that the temperature of the heat insulation layer after the flow rate control is less than the first temperature threshold value. The second adjusting module is configured to control the temperature of the heater in the gas cooling channel based on a comparison result of the second temperature value and a second temperature threshold value, so as to determine that the temperature of the nitrogen gas used for purging the exhaust gas inlet after the temperature control is greater than the second temperature threshold value.

[0012] The application further provides an electronic device, which comprises a memory, a processor, and a computer program stored in the memory and running on the processor, and the processor implements the heat recovery control method of the semiconductor waste gas treatment device according to any one of the above when executing the program.

[0013] The application further provides a non-transitory computer readable storage medium, which stores a computer program, and the computer program implements the heat recovery control method of the semiconductor waste gas treatment device according to any one of the above when executed by a processor.

[0014] The application further provides a computer program product, which comprises a computer program, and the computer program implements the heat recovery control method of the semiconductor waste gas treatment device according to any one of the above when executed by a processor.

[0015] The heat recovery control method and device of the semiconductor waste gas treatment device provided by the application realize closed-loop recovery and reuse of energy by arranging the gas cooling channel and the heat insulation layer outside the reaction cavity and using nitrogen gas to absorb waste heat of the reaction cavity and purge the gas inlet, thereby significantly reducing the energy consumption of the device. On the one hand, the temperature of the device shell can be actively and accurately maintained within a safe threshold by monitoring the temperature of the heat insulation layer in real time and adjusting the flow rate of the nitrogen gas, thereby effectively avoiding the risk of personnel scalding and device thermal deformation and improving the safety of the device. On the other hand, the gas inlet can be cleaned under any working condition by monitoring the temperature of the purging nitrogen gas and starting auxiliary heating as needed, thereby ensuring the stable operation of the device. In addition to energy saving and safety, the cost and maintenance complexity of the device are also reduced. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the application or the prior art, the following will briefly introduce the drawings needed in the embodiments or the prior art description. Obviously, the drawings in the following description are some embodiments of the application, and other drawings can be obtained by those skilled in the art without creative effort.

[0017] Figure 1 is a structural schematic diagram of a reaction cavity cooling water system provided by the related method.

[0018] Figure 2 is a flow schematic diagram of a heat recovery control method of a semiconductor waste gas treatment device provided by the present application.

[0019] Figure 3 is a structural schematic diagram of a waste gas treatment device provided by the present application.

[0020] Figure 4 is a structural schematic diagram of a reaction cavity of a waste gas treatment device provided by the present application.

[0021] Figure 5 is a structural schematic diagram of a nitrogen gas heating structure provided by the present application.

[0022] Figure 6 is a control logic flow schematic diagram provided by the present application.

[0023] Figure 7 is a gas cooling channel structural schematic diagram provided by the present application.

[0024] Figure 8 is a structural schematic diagram of a mesh plate provided by the present application.

[0025] Figure 9 is a structural schematic diagram of a heat recovery control device of a semiconductor waste gas treatment device provided by the present application.

[0026] Figure 10 is a structural schematic diagram of an electronic device provided by the present application.

[0027] Reference signs: 101: waste gas; 102: bypass; 103: high-temperature nitrogen gas; 104: pilot fuel; 105: dry air inlet; 106: spray water supply; 107: reaction cavity; 108: cooling chamber; 109: circulating water; 110: waterfall section; 111: cooling chamber; 112: secondary scrubber filler; 113: fresh water; 114: output treated waste gas; 115: gas cooling channel; 116: heat insulation layer. DETAILED DESCRIPTION

[0028] In order to make the objects, technical solutions and advantages of the present application clearer, the technical solutions in the present application will be clearly and completely described below in combination with the drawings in the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the protection scope of the present application.

[0029] In the semiconductor production process, toxic, flammable and explosive waste gas is generated. These waste gases are treated at high temperature to meet environmental protection requirements before being discharged. Special gas silane (SiH4) used in high-temperature deposition process decomposes to generate particulate matter at high temperature. Ammonia (NH3) releases hydrogen radicals at high temperature. Tungsten fluoride (WF6) is reduced by hydrogen at high temperature to generate hydrogen fluoride (HF); special gas phosphine (PH3) used in high-temperature etching and ion implantation decomposes at high temperature.

[0030] Based on the special gas used in semiconductors, it needs to be treated in a high-temperature environment, so the semiconductor waste gas equipment reaction cavity provides a high-temperature environment for treating semiconductor process waste gas.

[0031] The semiconductor process waste gas contains dust, solid particles and easily condensed gas, which can block the gas inlet of the waste gas treatment equipment. In related methods, a scraper is used in cooperation with a hot nitrogen gas device.

[0032] The semiconductor waste gas treatment equipment reaction cavity is in a high-temperature environment for a long time, which can easily cause the waste gas treatment equipment reaction cavity to deform and leak, causing safety accidents. The waste gas treatment equipment reaction cavity in the related method uses a water cooling method for cooling.

[0033] The reaction cavity of the related method uses a water cooling method, and the factory needs to separately provide a cooling system. The semiconductor waste gas treatment equipment cooling system mainly includes a cooling water system and a circulating water system, which can be specifically as follows Figure 1 The structure diagram of the cooling water system of the reaction cavity provided by the related method is shown. The cooling water system includes a hand valve, a one-way valve, a water inlet diaphragm valve, a plate heat exchanger, a drain diaphragm valve and a hand valve. The circulating water system includes a hand valve and a circulating water pump. The working principle of the outer wall cooling of the waste gas treatment equipment reaction cavity is that the circulating water pump cools the high-temperature water in the water tank through the plate exchanger, and sends the cold water to the outer wall of the reaction cavity. From the bottom of the reaction cavity, it is immersed and flows into the top of the reaction cavity, and then flows into the inner cavity of the reaction cavity. The water overflows along the top of the inner cavity of the reaction cavity to the water tank.

[0034] Because the semiconductor process waste gas contains strong acid, the circulating water circuit and components use materials with strong corrosion resistance, resulting in high cost of components.

[0035] This control mode can quickly reduce the temperature of the reaction cavity, but the control loop components are more, the control is complex, the production equipment cycle is longer, and the training time and education level of workers are higher, resulting in high labor cost.

[0036] The heat of the reaction cavity is directly taken away, and the resources are wasted.

[0037] In view of the defects in the related method, the present application provides a heat recovery control method of a semiconductor waste gas treatment equipment, which is applied to a waste gas treatment equipment, the waste gas treatment equipment comprising a reaction cavity, a gas cooling channel arranged on the inner side of the outer wall of the reaction cavity, and a heat preservation and insulation layer arranged on the outer side of the outer wall of the reaction cavity, the gas cooling channel being used to guide nitrogen gas to flow from the bottom of the reaction cavity to the top of the outer wall in sequence through the inner side surface of the outer wall, and the nitrogen gas after absorbing heat is blown to the gas inlet of the waste gas treatment equipment, Figure 2 is a flowchart of the heat recovery control method of the semiconductor waste gas treatment equipment provided by the present application, as Figure 2 shown, the method comprises the following steps: Step 210, obtaining a first temperature value of the heat preservation and insulation layer and a second temperature value of the waste gas inlet; Step 220, based on the comparison result of the first temperature value and the first temperature threshold value, controlling the nitrogen gas flow into the gas cooling channel, and determining that the temperature of the heat preservation and insulation layer after flow control is less than the first temperature threshold value; Step 230, based on the comparison result of the second temperature value and the second temperature threshold value, controlling the temperature of the heater in the gas cooling channel, and determining that the temperature of the nitrogen gas blowing to the waste gas inlet after temperature control is greater than the second temperature threshold value.

[0038] Next, taking the control system executing the heat recovery control method of the semiconductor waste gas treatment equipment provided by the present application as an example, the technical scheme of the present application will be described in detail.

[0039] Specifically, the structure diagram of the waste gas treatment equipment can be as Figure 3 shown in the structure diagram of the waste gas treatment equipment provided by the present application. The core components include one or more gas inlets, a reaction cavity, a combustion system and a water washing system. The equipment is used for treating strong acid, toxic and harmful gas generated in the semiconductor manufacturing process. The specific treatment process of the waste gas comprises: The waste gas 101 to be treated enters the device and can bypass directly under special working conditions. Under normal conditions, the waste gas enters the reaction chamber 107, mixes with the high-temperature nitrogen gas 103, the ignition fuel 104 and the combustion-supporting air from the dry air inlet 105, and reacts at high temperature. The high-temperature gas after the reaction enters the cooling unit, and is cooled in sequence by the cooling chamber 108 cooled by circulating water 109, the waterfall section 110 and the cooling chamber 111, so as to realize rapid cooling. The cooled gas enters the secondary washing tower, which is provided with secondary washing filler 112, and is sprayed and washed by the spray water supply 106 and the supplemented fresh water 113 to remove harmful substances in the gas. Finally, the output treated waste gas 114 after purification is discharged in compliance with the standard.

[0040] The reaction chamber structure of the waste gas treatment device can be as shown in Figure 4 The reaction chamber structure of the waste gas treatment device provided by the present application is shown in the figure. An insulation layer 116 is arranged outside the outer wall of the reaction chamber, and a gas cooling channel 115 is arranged inside the outer wall of the reaction chamber.

[0041] In the present application, the gas cooling channel is a channel structure surrounding or covering the outer wall of the reaction chamber, and its core function is to guide the cooling medium (specifically nitrogen) to fully exchange heat with the outer wall of the high-temperature reaction chamber. The channel is designed to guide the nitrogen to flow from the bottom of the reaction chamber to the inner surface of the outer wall in sequence, and finally to the top. This downward flow design can make the nitrogen flow more smoothly by utilizing the principle of hot air rising, and ensure that the nitrogen can fully and efficiently exchange heat with the entire outer wall of the reaction chamber. After heat exchange, the nitrogen (i.e. hot nitrogen) that has absorbed a large amount of heat is guided to the gas inlet of the waste gas treatment device for purging the gas inlet to clean the blockage caused by dust, solid particles or easily condensed gas in the waste gas.

[0042] It should be noted that in the semiconductor production process, toxic, flammable and explosive waste gas is generated. These waste gases are treated at high temperature to meet environmental protection requirements before being discharged.

[0043] The waste gas in the semiconductor production process contains dust, solid particles and easily condensed gas, which can block the gas inlet of the waste gas treatment device, so it is generally necessary to additionally heat the gas inlet of the waste gas treatment device. The related method generally uses a scraper in cooperation with a hot nitrogen device.

[0044] Based on the output of the heat absorbed in the reaction chamber to the gas inlet of the waste gas treatment device for purging the gas inlet, the blockage caused by dust, solid particles or easily condensed gas in the waste gas can be cleaned, and the gas inlet does not need to be additionally heated, thereby improving the energy utilization rate.

[0045] The heat insulation layer can be implemented based on a heat preservation bag and wrapped outside the gas cooling channel and the reaction cavity. The heat insulation layer has two functions: one is to reduce the heat loss of the reaction cavity to the external environment, so that more heat is transferred to the nitrogen in the gas cooling channel, thereby improving the heat recovery efficiency; the second is to effectively reduce the surface temperature of the outermost layer of the equipment, thereby avoiding burns to the operating or maintenance personnel and improving the overall safety of the equipment.

[0046] In step 210, a first temperature value of the heat insulation layer and a second temperature value of purging the waste gas inlet are obtained.

[0047] The first temperature value can be obtained by installing a first temperature sensor on the outer surface or a predetermined position inside the heat insulation layer. The second temperature value can be obtained by installing a second temperature sensor at the outlet of the gas cooling channel, close to the waste gas inlet.

[0048] In step 220, based on the comparison result of the first temperature value and the first temperature threshold, the nitrogen flow into the gas cooling channel is controlled, and the temperature of the heat insulation layer after the flow control is less than the first temperature threshold.

[0049] The purpose of step 220 is to perform safety control. The first temperature threshold is a preset safety upper limit value, and the setting basis is the safety standard for preventing burns to the operating personnel or performance degradation of the equipment material at high temperature. The control system compares the first temperature value obtained in real time with the threshold value. If the first temperature value is greater than or equal to the first temperature threshold, it indicates that the cooling of the reaction cavity is insufficient, and the heat accumulation is too much. At this time, the control system will issue an instruction to increase the nitrogen flow into the gas cooling channel through the electromagnetic valve, flow meter and other execution components in the gas cooling channel. The increased nitrogen flow will carry away more heat, thereby effectively reducing the temperature of the outer wall of the reaction cavity and the heat insulation layer, so as to maintain the temperature below the safety threshold. Conversely, if the first temperature value is lower than the first temperature threshold, the nitrogen flow can be maintained or appropriately reduced to save nitrogen consumption.

[0050] In step 230, based on the comparison result of the second temperature value and the second temperature threshold, the heater in the gas cooling channel is controlled to be heated, and the nitrogen temperature for purging the waste gas inlet after the heating control is greater than the second temperature threshold. The purpose of step 230 is to ensure the purging effect of the inlet of the waste gas treatment equipment.

[0051] The second temperature threshold is the minimum temperature required to ensure effective cleaning of the air inlet blockage, which can be set to 150°C for example. After the nitrogen absorption reaction cavity absorbs heat, the measured temperature value of the purging may still not reach the second temperature threshold, especially in the case of a newly started device or a small amount of waste gas processing, and the reaction cavity temperature is not high. At this time, the control system compares the second temperature value with the second temperature threshold. If the second temperature value is lower than the threshold, the control system will automatically start or increase the power of the heater arranged in the gas cooling channel to supplement the heating of the nitrogen until its temperature exceeds the second temperature threshold to ensure the effectiveness of the purging. If the second temperature value is already higher than the threshold, the heater does not need to work or remains closed, thereby achieving energy saving.

[0052] Optionally, the supplemental heating of the nitrogen can be implemented based on a hot nitrogen module, such as Figure 5 The nitrogen heating structure provided by the present application is shown in the schematic diagram. The hot nitrogen module specifically includes a power circuit breaker, a temperature controller, a solid-state relay, and a gas heater, which are used to heat the supplied nitrogen and control the temperature during the heating process.

[0053] Optionally, if the air inlet amount of the waste gas treatment device is uneven, large or small at different times, according to the pressure change of the air inlet of the waste gas treatment device, the temperature change of the reaction cavity outer wall temperature sensor and the nitrogen outlet loop temperature sensor, the waste gas treatment device can perform real-time adjustment of the gas heater power based on the adaptive learning function, thereby accurately controlling the temperature of the purging nitrogen at the air inlet. The waste gas treatment device is more intelligent, thereby reducing the work intensity of engineers The heat recovery control method of the semiconductor waste gas treatment device provided by the present application realizes closed-loop recovery and reuse of energy by arranging a gas cooling channel and a heat preservation and insulation layer on the outer wall of the reaction cavity, and using the waste heat of the nitrogen absorption reaction cavity to purge the air inlet. This significantly reduces the energy consumption of the device in operation. On the one hand, by monitoring the temperature of the heat preservation layer in real time and adjusting the nitrogen flow, the temperature of the device shell can be actively and accurately maintained within a safe threshold, effectively avoiding the risk of personnel scalding and device thermal deformation, and improving the safety of the device. On the other hand, by monitoring the temperature of the purging nitrogen and starting auxiliary heating as needed, it is ensured that the air inlet can be cleaned under any working condition, and the stable operation of the device is ensured. While achieving energy saving and safety, the cost and maintenance complexity of the device are also reduced.

[0054] In some embodiments, the control of the nitrogen flow into the gas cooling channel based on the comparison result of the first temperature value and the first temperature threshold comprises: in the case where it is determined that the first temperature value is greater than the first temperature threshold, determining an increment of the nitrogen flow in the gas cooling channel based on the difference between the initial temperature of the heat preservation and insulation layer and the first temperature threshold; and increasing the nitrogen flow in the gas cooling channel based on the increment.

[0055] The control system executes a preset algorithm to calculate the adjustment amount of the flow rate. When the first temperature value is detected to exceed the first temperature threshold, the control system performs proportional adjustment. The initial temperature is the temperature value before the current adjustment period starts, or a reference temperature in the stable state of the system.

[0056] It can be understood that the temperature of the heat insulation layer cannot be too high, which will cause danger to personnel, and the outer surface temperature of the heat insulation layer is limited to the first temperature threshold ; the nitrogen flow rate is controlled to regulate the temperature of the heat insulation layer, wherein: , ; , ; wherein, . is the initial temperature of the heat insulation layer. is a correlation coefficient, which can be determined according to experimental data or simulation results to achieve optimal control results.

[0057] Subsequently, based on the increment, the nitrogen flow rate in the gas cooling channel is increased. The control system applies the calculated increment to flow control, so that the actual nitrogen flow rate is increased by a corresponding value.

[0058] The proportional control method based on the difference to determine the flow increment can make the temperature adjustment more smooth and accurate. When the temperature difference is large, the flow rate is also increased, achieving rapid cooling; when the temperature difference is small, the flow rate is also increased, avoiding the temperature fluctuation and control overshoot.

[0059] In some embodiments, the temperature control of the heater in the gas cooling channel based on the comparison result of the second temperature value and the second temperature threshold includes: in the case where it is determined that the second temperature value is less than the second temperature threshold, starting the gas heater and adjusting the power of the heater to heat the nitrogen in the gas cooling channel.

[0060] In the case where it is determined that the second temperature value is less than the second temperature threshold, the gas heater is started and the power of the heater is adjusted to heat the nitrogen in the gas cooling channel.

[0061] When the control system determines that the nitrogen temperature for purging (i.e., the second temperature value) is lower than a second temperature threshold value, for example, 150℃, it sends a start signal to the power controller of the gas heater. The output power of the heater can be adjusted according to the difference between the second temperature value and the second temperature threshold value. The greater the difference, the more heat needs to be supplemented, and the greater the power output of the heater; otherwise, the smaller.

[0062] In some embodiments, the power adjusted by the heater is: ; wherein, is the power adjusted by the heater, is the nitrogen density, is the nitrogen flow rate, is the specific heat capacity of nitrogen, is a correlation coefficient, is the second temperature value.

[0063] It should be noted that, is a correlation coefficient, which can be determined according to experimental data or simulation results to achieve optimal control results.

[0064] This formula accurately calculates the heat power required to heat the nitrogen with the current flow rate and the temperature to the target temperature 150℃ based on the basic principles of thermodynamics. By using this formula for control, precise and efficient adjustment of the purging nitrogen temperature can be achieved, and energy waste can be avoided.

[0065] In some embodiments, the nitrogen flow rate is: ; wherein, is the deviation value of the second temperature value collected at the collection time from the second temperature threshold value, is a proportional gain coefficient of the deviation value, used to amplify the role of the current deviation value The greater the deviation value, the greater the adjustment range. is a differential gain coefficient of the second temperature value change speed, used to predict the future error trend (through the error change rate), provide damping effect to suppress oscillation, can reduce overshoot and improve stability, but is sensitive to noise. If the temperature is rising rapidly (T > 0), even if the current error is small, the nitrogen flow rate will be increased in advance to suppress the temperature rise rate and avoid overshoot.

[0066] It should be noted that due to the pipe heat storage effect, the actual second temperature value changes lag behind the flow adjustment, so the control term is added in the formula of the nitrogen flow. Specifically, PD (proportional-derivative) control is introduced. By introducing the derivative term, the control algorithm can predictively adjust, making the temperature control of the outer wall of the reaction chamber more rapid, stable and accurate, greatly improving the dynamic response performance and robustness of the system.

[0067] ; wherein, is the second temperature value, is the second temperature threshold. , e(t) ≥0, represents that the temperature is too high; , e(t) 0, represents that the temperature is too low.

[0068] The specific control logic can be as shown in the control logic flow diagram provided by the application. Figure 6 The application provides a control logic flow diagram. The first temperature value is monitored in real time , and it is determined whether the first temperature value is less than or equal to the first temperature threshold. If yes, the nitrogen flow is not adjusted. If no, the nitrogen flow is increased.

[0069] Further, the second temperature value is monitored in real time , and it is determined whether the second temperature value is less than the second temperature threshold. If yes, it represents that the temperature is high, and the heater power does not need to be adjusted. If no, it represents that the temperature is too low, and the heater power is adjusted.

[0070] In some embodiments, the gas cooling channel is a multi-layer closed pipe type, and a plurality of mesh plates are embedded in the pipe of the gas cooling channel.

[0071] In order to further improve the heat exchange efficiency and the uniformity of cooling, the physical structure of the gas cooling channel can be specially designed.

[0072] The gas cooling channel can be specifically as shown in the gas cooling channel structure diagram provided by the application. The multi-layer closed pipe type structure means that the cooling pipe is wound on the outer wall of the reaction chamber for multiple times and in a zigzag manner, forming a relatively long flow path. This design significantly increases the residence time of nitrogen in the channel and the contact area with the outer wall of the reaction chamber, so as to ensure that the nitrogen can absorb as much heat as possible, maximizing the heat recovery efficiency. Figure 7 The application provides a gas cooling channel structure diagram. The multi-layer closed pipe type structure means that the cooling pipe is wound on the outer wall of the reaction chamber for multiple times and in a zigzag manner, forming a relatively long flow path. This design significantly increases the residence time of nitrogen in the channel and the contact area with the outer wall of the reaction chamber, so as to ensure that the nitrogen can absorb as much heat as possible, maximizing the heat recovery efficiency.

[0073] ​​​​The mesh plate is a porous plate arranged inside the pipeline, and the specific structure is as shown in Figure 8 The mesh plate provided by the present application is shown in the structural schematic diagram. Its function is to disturb the nitrogen gas flowing through the pipeline and uniformly distribute it to the entire cross section of the pipeline. This can break the boundary layer attached to the pipe wall, strengthen the convective heat transfer, and ensure that each part of the outer wall of the reaction chamber is uniformly cooled, effectively avoiding local hot spots caused by uneven cooling, further improving the safety and reliability of the equipment.

[0074] With this optimized channel structure, the heat transfer process can be strengthened from the physical layer, the performance of the entire heat recovery control system is improved, and ultimately more efficient energy saving and safety effects are achieved.

[0075] The heat recovery control device of the semiconductor waste gas treatment equipment provided by the present application is described below, and the heat recovery control device of the semiconductor waste gas treatment equipment described below can be referred to each other corresponding to the heat recovery control method of the semiconductor waste gas treatment equipment described above.

[0076] As shown in Figure 9 applied to a waste gas treatment equipment, the waste gas treatment equipment includes a reaction chamber, a gas cooling channel arranged inside the outer wall of the reaction chamber, and a heat preservation and insulation layer arranged outside the outer wall of the reaction chamber, the gas cooling channel is used to guide the nitrogen gas to flow from the bottom of the reaction chamber to the top of the outer wall in sequence, and the nitrogen gas after absorbing heat is blown to the gas inlet of the waste gas treatment equipment, and the device comprises: The temperature acquisition module 910 is configured to acquire a first temperature value of the heat preservation and insulation layer and a second temperature value of the waste gas inlet. The first adjusting module 920 is configured to control the nitrogen flow into the gas cooling channel based on the comparison result of the first temperature value and the first temperature threshold value, and determine that the temperature of the heat preservation and insulation layer after flow control is less than the first temperature threshold value. The second adjusting module 930 is configured to control the temperature of the heater in the gas cooling channel based on the comparison result of the second temperature value and the second temperature threshold value, and determine that the temperature of the nitrogen gas blowing to the waste gas inlet after temperature control is greater than the second temperature threshold value.

[0077] The heat recovery control device of the semiconductor waste gas treatment equipment provided by the application realizes closed-loop recovery and reuse of energy by setting a gas cooling channel and a heat preservation and insulation layer on the outer wall of the reaction cavity, using nitrogen to absorb waste heat of the reaction cavity and for purging the gas inlet, significantly reduces the energy consumption of the equipment operation. On the one hand, by monitoring the temperature of the heat preservation layer in real time and regulating the nitrogen flow, the temperature of the equipment shell can be actively and accurately maintained within a safe threshold, effectively avoiding the risk of personnel scalding and equipment thermal deformation, and improving the safety of the equipment. On the other hand, by monitoring the temperature of the purging nitrogen and starting the auxiliary heating as needed, it is ensured that the gas inlet can be cleaned under any working condition, and the stable operation of the equipment is ensured. While realizing energy saving and safety, the cost and maintenance complexity of the equipment are also reduced.

[0078] In some embodiments, the first adjusting module 920 is specifically configured to: The control of the nitrogen flow into the gas cooling channel based on the comparison result of the first temperature value and the first temperature threshold value comprises: In the case where it is determined that the first temperature value is greater than the first temperature threshold value, the increment of the nitrogen flow in the gas cooling channel is determined based on the difference between the initial temperature of the heat preservation and insulation layer and the first temperature threshold value. The nitrogen flow in the gas cooling channel is increased based on the increment.

[0079] In some embodiments, the second adjusting module 930 is specifically configured to: The temperature control of the heater in the gas cooling channel based on the comparison result of the second temperature value and the second temperature threshold value comprises: In the case where it is determined that the second temperature value is less than the second temperature threshold value, the heater is started and the power of the heater is adjusted to heat the nitrogen in the gas cooling channel.

[0080] In some embodiments, the second adjusting module 930 is further specifically configured to: The power adjusted by the heater is determined as: ; Wherein, is the power of the heater, is the density of nitrogen, is the nitrogen flow, is the specific heat capacity of nitrogen, is a correlation coefficient, is the second temperature value.

[0081] In some embodiments, the second adjusting module 930 is further specifically configured to: The nitrogen flow is determined as: ; in, This represents the deviation between the second temperature value and the second temperature threshold. The proportional gain coefficient for the deviation value. The differential gain coefficient is the rate of change of the second temperature value.

[0082] In some embodiments, the second adjustment module 930 is further configured to: The gas cooling channel is determined to be a multi-layered closed pipe type, and multiple perforated plates are embedded in the pipe of the gas cooling channel.

[0083] Figure 10 An example is a schematic diagram of the physical structure of an electronic device, such as... Figure 10 As shown, the electronic device may include a processor 1010, a communications interface 1020, a memory 1030, and a communication bus 1040. The processor 1010, communications interface 1020, and memory 1030 communicate with each other via the communication bus 1040. The processor 1010 can call logic instructions from the memory 1030 to execute a heat recovery control method for the semiconductor waste gas treatment device. This method includes: acquiring a first temperature value of the thermal insulation layer and a second temperature value for purging the waste gas inlet. Based on the comparison result between the first temperature value and the first temperature threshold, the flow rate of nitrogen gas introduced into the gas cooling channel is controlled to determine that the temperature of the thermal insulation layer after the flow rate control is less than the first temperature threshold. Based on the comparison between the second temperature value and the second temperature threshold, the heater in the gas cooling channel is heated to determine that the nitrogen temperature at the exhaust gas inlet after the heating control is greater than the second temperature threshold.

[0084] Further, the logic instructions in the memory 1030 described above can be implemented in the form of software functional units and sold or used as independent products, and can be stored in a computer readable storage medium. Based on such understanding, the technical solutions of the present application essentially or the parts that make contributions to the prior art or parts of the technical solutions can be embodied in the form of a software product. The computer software product is stored in a storage medium, and includes a number of instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present application. The aforementioned storage medium includes: a U disk, a mobile hard disk, a read-only memory (ROM, Read-Only Memory), a random access memory (RAM, Random Access Memory), a magnetic disk or an optical disk, and various media that can store program codes.

[0085] In another aspect, the present application also provides a computer program product, which comprises a computer program, the computer program can be stored on a non-transitory computer readable storage medium, and the computer program is executed by a processor, so that the computer can execute the heat recovery control method of the semiconductor waste gas treatment equipment provided by the above-mentioned methods, the method comprises: obtaining a first temperature value of a heat preservation and insulation layer and a second temperature value of purging a waste gas inlet; Based on the comparison result of the first temperature value and a first temperature threshold value, the nitrogen flow into the gas cooling channel is controlled, and the temperature of the heat preservation and insulation layer after flow control is determined to be less than the first temperature threshold value; Based on the comparison result of the second temperature value and a second temperature threshold value, the heater in the gas cooling channel is controlled to be heated, and the nitrogen temperature for purging the waste gas inlet after heating control is determined to be greater than the second temperature threshold value.

[0086] In another aspect, the present application also provides a non-transitory computer readable storage medium, which stores a computer program, and the computer program is executed by a processor to implement the heat recovery control method of the semiconductor waste gas treatment equipment provided by the above-mentioned methods, the method comprises: obtaining a first temperature value of a heat preservation and insulation layer and a second temperature value of purging a waste gas inlet; Based on the comparison result of the first temperature value and a first temperature threshold value, the nitrogen flow into the gas cooling channel is controlled, and the temperature of the heat preservation and insulation layer after flow control is determined to be less than the first temperature threshold value; Based on the comparison result of the second temperature value and a second temperature threshold value, the heater in the gas cooling channel is controlled to be heated, and the nitrogen temperature for purging the waste gas inlet after heating control is determined to be greater than the second temperature threshold value.

[0087] The device embodiments described above are merely illustrative, wherein the units described as separate components can or can not be physically separate, and the components displayed as units can or can not be physical units, i.e., can be located in one place, or can be distributed to multiple network units. Part or all of the modules can be selected to achieve the purposes of the embodiments according to actual needs. Those skilled in the art can understand and implement without creative labor.

[0088] Through the description of the above embodiments, those skilled in the art can clearly understand that the embodiments can be realized by means of software and the necessary general hardware platform, and of course can also be realized by hardware. Based on such understanding, the above technical solutions can be embodied in the form of a software product, which can be stored in a computer readable storage medium, such as a ROM / RAM, a magnetic disk, an optical disk, etc., and includes a number of instructions to make a computer device (which can be a personal computer, a server, or a network device, etc.) execute the methods described in each embodiment or some parts of the embodiments.

[0089] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A heat recovery control method for a semiconductor exhaust gas treatment apparatus, characterized by, The application is applied to a waste gas treatment device, the waste gas treatment device comprises a reaction cavity, a gas cooling channel arranged on the inner side of the outer wall of the reaction cavity, and a heat preservation layer arranged on the outer side of the outer wall of the reaction cavity, the gas cooling channel is used for guiding nitrogen to flow from the bottom of the reaction cavity to the top of the outer wall in sequence, and the nitrogen after absorbing heat is blown to the gas inlet of the waste gas treatment device, and the method comprises the following steps of: obtaining a first temperature value of the heat preservation layer and a second temperature value of the waste gas inlet; controlling the nitrogen flow into the gas cooling channel based on the comparison result of the first temperature value and the first temperature threshold value, and determining that the temperature of the heat preservation layer after flow control is less than the first temperature threshold value; based on the comparison result of the second temperature value and the second temperature threshold value, the heater in the gas cooling channel is controlled to be heated, and it is determined that the temperature of the nitrogen blowing to the waste gas inlet after heating control is greater than the second temperature threshold value.

2. The heat recovery control method of a semiconductor exhaust gas treatment apparatus according to claim 1, characterized by, The method comprises the following steps: in the case that the first temperature value is greater than the first temperature threshold value, the increment of the nitrogen flow in the gas cooling channel is determined based on the difference between the initial temperature of the heat preservation layer and the first temperature threshold value; based on the increment, the nitrogen flow in the gas cooling channel is increased.

3. The heat recovery control method of a semiconductor exhaust gas treatment apparatus according to claim 1, characterized by, The method comprises the following steps: in the case that the second temperature value is less than the second temperature threshold value, the heater is started and the power of the heater is adjusted to heat the nitrogen in the gas cooling channel.

4. The heat recovery control method of a semiconductor exhaust gas treatment apparatus according to claim 3, characterized by, The power of the heater is adjusted to: ； wherein, is the power regulated to the heater, is the nitrogen density, is the nitrogen flow rate, is the specific heat capacity of nitrogen, is the relation coefficient, is the second temperature value.

5. The heat recovery control method of a semiconductor exhaust gas treatment apparatus according to claim 4, characterized by, The nitrogen flow is: ； wherein is a deviation value of the second temperature value from a second temperature threshold value, is a proportional gain coefficient of the deviation value, is a differential gain coefficient of a second temperature value change speed.

6. The heat recovery control method of a semiconductor exhaust gas treatment apparatus according to claim 5, characterized by, The gas cooling channel is a multi-layer closed pipeline, and a plurality of mesh plates are embedded in the pipeline of the gas cooling channel.

7. A heat recovery control device for semiconductor waste gas treatment equipment, characterized in that, The application is applied to a waste gas treatment device, the waste gas treatment device comprises a reaction cavity, a gas cooling channel arranged on the inner side of the outer wall of the reaction cavity, and a heat preservation layer arranged on the outer side of the outer wall of the reaction cavity, the gas cooling channel is used for guiding nitrogen to flow from the bottom of the reaction cavity to the top of the outer wall in sequence, and the nitrogen after absorbing heat is blown to the gas inlet of the waste gas treatment device, and the device comprises the following steps: a temperature acquisition module for acquiring a first temperature value of the heat preservation layer and a second temperature value of the waste gas inlet; a first adjusting module for controlling the nitrogen flow into the gas cooling channel based on the comparison result of the first temperature value and the first temperature threshold value, and determining that the temperature of the heat preservation layer after flow control is less than the first temperature threshold value; a second adjusting module for controlling the heater in the gas cooling channel to be heated based on the comparison result of the second temperature value and the second temperature threshold value, and determining that the temperature of the nitrogen blowing to the waste gas inlet after heating control is greater than the second temperature threshold value.

8. An electronic device comprising a memory, a processor, and a computer program stored on the memory and running on the processor, characterized in that, The computer program causes the processor to implement the heat recovery control method of the semiconductor exhaust gas treatment apparatus according to any one of claims 1 to 6 when the computer program is executed by the processor. 9.A non-transitory computer-readable storage medium having stored thereon a computer program, characterized in that, The computer program causes the processor to implement the heat recovery control method of the semiconductor exhaust gas treatment apparatus according to any one of claims 1 to 6 when the computer program is executed by the processor.

10. A computer program product comprising a computer program, characterized in that, The computer program causes the processor to implement the heat recovery control method of the semiconductor exhaust gas treatment apparatus according to any one of claims 1 to 6 when the computer program is executed by the processor.

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