Broadband high-voltage transconductance derivative amplifier

Abstract

The invention belongs to the technical field of semiconductor hybrid integrated circuits, and discloses a broadband high-voltage transconductance derivative amplifier which comprises a component carrier, a two-stage amplifier is arranged on the component carrier, and a shell is arranged on the outer side of the component carrier. The two-stage amplifier comprises a first-stage common-emitter amplifying circuit topological structure and a second-stage push-pull output topological structure, the first-stage common-emitter amplifying circuit topological structure comprises a transistor for amplifying an input signal, and the transistor is connected with a bias circuit; the second-stage push-pull output topological structure receives an electrode signal amplified by the transistor, then carries out power amplification and outputs the signal to an output end, and a feedback circuit is connected between the first-stage common-emitter amplification circuit topological structure and the second-stage push-pull output topological structure, so that the amplifier has the characteristics of wide bandwidth and high voltage output; meanwhile, the working stability and reliability are guaranteed, and the requirements of the aerospace field for the performance and structure of the amplifier are met.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor hybrid integrated circuits, and particularly relates to a wideband high-voltage transconductance derivative amplifier. BACKGROUND

[0002] As a key electronic device, the wideband high-voltage video amplifier has important and extensive applications in both civil and aerospace fields. In the civil field, it is the core component of super-high-performance video processing, such as in professional video editing equipment and high-definition video transmission systems, which can accurately amplify video signals to ensure picture clarity and stability; at the same time, it is suitable for high-resolution CRT displays, which are still used in scenes that require precision, such as industrial monitoring and medical image display, and the amplifier can ensure that high-resolution images are presented. In addition, it is also used in high-voltage transconductance derivative amplifiers and automatic test equipment. In the automatic test equipment, it can not only expand the input voltage amplitude range of the signal source to meet the testing needs of electronic components with different voltage amplitudes, but also complete signal amplification and have a certain driving capacity for test loads to ensure smooth testing. In the aerospace field, with the development of technology, the electronic systems of aircraft and spacecraft have higher requirements for signal processing, and the amplifier is also used in related signal processing and device control links to support the normal operation of aerospace equipment.

[0003] However, there are still many problems in practical application. The reliability requirement of aerospace field for equipment is extremely high, and the equipment needs to work stably for a long time in complex environments such as extreme temperature, vibration and radiation. Once a fault occurs, it may cause serious consequences. However, the industrial-grade amplifier widely used in industrial automation systems, medical electronic systems and other civil fields can meet the basic needs of civil use, but its reliability is obviously insufficient, and it cannot withstand the harsh environment of the aerospace field, so it cannot meet the high reliability requirements of this field. At the same time, the traditional wideband high-voltage amplifier mostly adopts a board-level structure, and is designed by using discrete devices, which makes the amplifier bulky, and brings difficulties to the integration of equipment in scenes such as aerospace equipment where space resources are valuable. Moreover, the weight is relatively large, which increases the overall weight of the aerospace equipment, affects the carrying efficiency and endurance, and in addition, the heat generated during work is relatively large, and a large heat sink needs to be equipped to ensure normal operation, which not only further increases the weight and volume of the system, but also may cause the performance of the amplifier to be unstable due to insufficient heat dissipation, and even shorten the service life.

[0004] In order to improve these problems, some better performance amplifier products have also been introduced in the industry, and there are many representative manufacturers abroad, such as IR Company, MSK Company, APEX Company, etc., among which the related products of MSK Company in the United States are the most outstanding. The products of the company have the characteristics of high working voltage, can handle signals in a higher voltage range, adapt to scenes with higher voltage requirements; have large driving current, can provide stronger current driving capability to the load, and guarantee the stable operation of the load; have high conversion rate, can quickly respond to input signal changes, reduce signal distortion, and ensure signal real-time and accuracy; have good linearity, which can effectively reduce nonlinear distortion in the signal amplification process and improve signal fidelity. With these advantages, the products of MSK Company are widely used in the international market, which to some extent improves the performance deficiency of traditional amplifiers and better meets the needs of some civilian fields and special scenes.

[0005] However, the existing solutions still have many deficiencies. On the one hand, although the amplifiers of MSK and other foreign manufacturers have improved in performance indicators, their reliability still does not meet the stringent standards of the aerospace field, and it is difficult to guarantee long-term stable operation without failure in the complex and harsh environment of this field. On the other hand, the problems of large size, heavy weight and high heat generated by the traditional amplifier board-level structure and discrete device design have not been fundamentally solved, and even if the existing products have been improved, the effect is limited, and they cannot meet the higher demand for small size, lightweight and low heat of supporting components in the rapid development of aerospace technology in recent years. SUMMARY

[0006] The present application provides a wideband high-voltage transconductance derivative amplifier, which solves the problem of large size and weight of traditional wideband high-voltage amplifiers designed with discrete devices.

[0007] To achieve the above purpose, the present application provides the following technical solutions: A wideband high-voltage transconductance derivative amplifier includes a component carrier, the component carrier is provided with a two-stage amplifier, and the outer side of the component carrier is provided with a shell, The two-stage amplifier includes a first common-emitter amplifier circuit topology and a second push-pull output topology; The first common-emitter amplifier circuit topology includes a transistor for amplifying an input signal, the transistor is connected with a bias circuit, the second push-pull output topology receives the amplified electrode signal of the transistor and performs power amplification, and outputs the signal to an output end, and the first common-emitter amplifier circuit topology and the second push-pull output topology are connected with a feedback circuit.

[0008] Further improvement of the present application is that the second push-pull output topology includes two transistors, one is NPN and the other is PNP.

[0009] The further improvement of the present application is that the two-stage amplifier is a reverse amplifier.

[0010] The further improvement of the present application is that the two-stage amplifier adopts a hybrid integrated thick film process technology for layout design.

[0011] The further improvement of the present application is that the component carrier is a beryllium oxide substrate.

[0012] The further improvement of the present application is that the component carrier is welded to the shell by a reflow soldering process.

[0013] The further improvement of the present application is that the shell material is 10# steel.

[0014] The further improvement of the present application is that the two-stage amplifier circuit legs are arranged on one side, and an independent bath tub embedded packaging is adopted.

[0015] The further improvement of the present application is that the bias circuit includes a transistor T1, resistors R1, R2 and R5, the base of T1 is connected to the power supply through R1 and R4 to obtain a bias voltage, and T1 provides a bias current for T3 through R5.

[0016] The further improvement of the present application is that the first-stage common-emitter amplification circuit topology and the second-stage push-pull output topology are both connected in parallel with filter capacitors.

[0017] Compared with the prior art, the present application has the following beneficial effects: the present application provides a wideband high-voltage transconductance derivative amplifier, which comprises a two-stage amplifier comprising a first-stage common-emitter amplification circuit and a second-stage push-pull output topology, a bias circuit for providing stable bias for the transistor of the common-emitter amplification circuit, which can ensure that the transistor is at a suitable static operating point, realize efficient linear amplification of the input signal, the push-pull output topology can amplify the power of the amplified signal to improve the output driving capability, the feedback circuit is connected to the two-stage amplifier circuit to optimize the circuit performance and eliminate the crossover distortion, and the component carrier and the outer shell are arranged to provide installation support for the circuit and protect the internal structure, so that the amplifier has wide bandwidth and high voltage output characteristics, and the working stability and reliability are guaranteed, which meets the performance and structure requirements of the amplifier in the field of aerospace.

[0018] Further, the hybrid integrated thick film process technology is adopted for layout design, and the significant feature of this process is small size, light weight, high integration and large power density, and compared with the existing PCB technology of the same level, the size is reduced to one fifth.

[0019] Further, the component carrier is a beryllium oxide substrate, the beryllium oxide substrate with high thermal conductivity is used as the component carrier, and the resistor, the conducting band and the beryllium oxide are integrated; Further, the component carrier is welded on the shell by using a reflow soldering process, and the heating component is welded on the substrate by using a vacuum brazing process, so that the welding cavity rate is minimized and the thermal resistance is reduced. Further, the two-stage amplifier circuit legs are arranged on one side, and the independent bath tub embedded packaging is used, so that the legs are arranged on one side, the independent bath tub embedded packaging is used, the device can be closely attached to the equipment during installation, and the stability and thermal characteristics are improved.

[0020] Further, the shell is made of 10# steel, the thermal conductivity of which is good, and the thermal expansion coefficient of which is close to that of the beryllium oxide substrate, so that the influence on the product quality during the temperature cycle test and the long-term high-temperature power aging test can be effectively avoided. The 10# steel shell has high strength, can effectively provide mechanical support for the substrate, and effectively ensures the reliability of the substrate in mechanical impact, constant acceleration and vibration test. The shell packaging form adopts a nitrogen-filled parallel sealing and welding process, and has good airtightness.

[0021] Further, the second-stage push-pull output topology structure includes two transistors, one is an NPN transistor and the other is a PNP transistor, and a complementary push-pull circuit is formed by using the complementary and symmetric structure of the NPN and PNP transistors BRIEF DESCRIPTION OF DRAWINGS Figure 1 It is a schematic diagram of a wideband high-voltage transconductance derivative amplifier circuit of the present application. Figure 2 It is a top view of the pins of the circuit package of the present application. Figure 3 It is a front view of the pins of the circuit package of the present application. In the figure, 1 is a first-stage common-emitter amplification circuit, and 2 is a second-stage push-pull output topology structure. DETAILED DESCRIPTION

[0022] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme of the embodiments of the present application will be described clearly and completely below in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings can be arranged and designed in various different configurations.

[0023] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed application, but only represents selected embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative labor are within the scope of protection of the present application.

[0024] It should be noted that similar reference numbers and letters represent similar items in the following drawings, and therefore, once an item is defined in one drawing, it need not be further defined and explained in subsequent drawings.

[0025] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third" are only for the purpose of description, and cannot be understood as indicating or implying relative importance. In the description of the present application, it should be noted that unless otherwise specifically defined and limited, the terms "mounting", "connecting", "connecting", "setting" should be broadly understood, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements.

[0026] In order for those skilled in the art to better understand the technical solutions of the present application, the present application will be further described in detail below with reference to the drawings.

[0027] As shown in Figure 1 The present application provides a wideband high-voltage transconductance derivative amplifier, comprising a component carrier, a two-stage amplifier is arranged on the component carrier, an outer shell is arranged outside the component carrier, The two-stage amplifier comprises a first common-emitter amplifier circuit topology and a second push-pull output topology. The first common-emitter amplifier circuit topology comprises a transistor for amplifying an input signal, the transistor is connected with a bias circuit, the second push-pull output topology receives the amplified electrode signal of the transistor and performs power amplification, and outputs the signal to an output end, and a feedback circuit is connected between the first common-emitter amplifier circuit topology and the second push-pull output topology.

[0028] By setting two-stage amplifier containing first-stage common-emitter amplification circuit and second-stage push-pull output topology, and biasing circuit providing stable bias for transistors of common-emitter amplification circuit, it can ensure that the transistors are at appropriate static operating points, realize efficient linear amplification of input signals, and the push-pull output topology can amplify the amplified signals in power, improve the output driving capability, and the feedback circuit connects the two-stage amplifier, which can optimize the circuit performance and eliminate crossover distortion. In combination with the setting of component carrier and outer shell, it not only provides installation support for the circuit, but also protects the internal structure. The overall amplifier takes into account wide bandwidth and high voltage output characteristics, while ensuring stable operation and reliability, which meets the performance and structure requirements of amplifiers in the field of aerospace.

[0029] The detailed settings are as follows: The wideband high-voltage cascade derivative amplifier circuit structure adopts two-stage operational amplifier, which is composed of first-stage common-emitter amplification circuit topology and second-stage push-pull output topology. The amplifier is a reverse amplifier, single power supply, the maximum power supply voltage can reach 75V, the bandwidth is 175MHz, the output voltage reaches 55V PP , the power supply current is ≤65mA, which can expand the input voltage amplitude range of the signal source, amplify the signal, and obtain greater output driving capability. It can drive 10ns pixels within 2ns transmission time, and further realize 1280x1024 pixel or higher resolution display requirements.

[0030] When designing the circuit, hybrid integrated thick film technology is used for layout design. The significant feature of this technology is small size, light weight, high integration, and high power density. Compared with the existing PCB technology of the same level, the volume is reduced to one-fifth, and the weight is only 12.5g.

[0031] The amplifier has high output voltage and certain output driving capability, and generates a lot of heat during operation. Therefore, there are high requirements for heat dissipation and heat resistance of the amplifier.

[0032] When designing the circuit, high-thermal-conductivity beryllium oxide substrate is used as the component carrier, and resistors, conductive strips and beryllium oxide are integrated. The reflow soldering process is used to solder the circuit on the shell, and the vacuum brazing process is used to solder the heat-generating components on the substrate, which minimizes the soldering void rate, reduces thermal resistance, and reduces losses. When designing the layout, the contact area of the heat-generating components is maximized to make the heat source evenly distributed, reduce the mechanical and thermal stress of the substrate, reduce losses, improve heat dissipation conditions, improve the reliability of the circuit, and make the circuit work stably and reliably.

[0033] The circuit legs are arranged on one side, and the independent bath tub embedded package is adopted, so that the circuit can be closely attached to the equipment during installation, and the stability and thermal characteristics are improved. The shell is made of 10# steel, which has good heat conduction performance and is close to the thermal expansion coefficient of beryllium oxide substrate, so that the influence on product quality during temperature cycle test and long-term high-temperature power aging test can be effectively avoided. The 10# steel shell has high strength, can effectively provide mechanical support for the substrate, and effectively ensures the reliability of the substrate in mechanical impact, constant acceleration and vibration test. The shell packaging form adopts nitrogen filling parallel sealing process, and has good airtightness.

[0034] As can be seen from the above, the high-density hybrid integrated thick film layout design is adopted in the application, the volume of the amplifier of the same grade can be reduced to 1 / 5 of the existing PCB technology, the weight is reduced by 2 / 3, the reliability level reaches H level, the working temperature range (T C ) is -55℃ to +125℃, the storage temperature range (T A ) is -65℃ to +150℃, the amplifier has the characteristics of small volume and high reliability, has wide application prospect in aerospace super-high-performance video processing, CTR display and other systems, and can meet the requirements of small volume, high reliability, light weight, stable performance and the like in the field of aerospace.

[0035] As shown in Figure 1 , another embodiment of the application provides a wideband high-voltage transconductance derivative amplifier. The signal is amplified by transistor T3, the input is composed of a push-pull output unit composed of T2, R9, R10 and T4, T1, R1, R2 and R5 provide bias for transistor T3, so that T3 is at a good static working point, R7, R8 and C8 form feedback inside the circuit and are connected between the output end and the inverting input end, and C3 and C4 are power filter capacitors.

[0036] When the circuit is in static state, that is, the inverting input end is not connected to the input signal (suspended), the base voltage of transistor T1 is: , transistor T1 is in an amplification state, the current of R5 is about 23.6mA, and T3 is in a linear amplification state.

[0037] The output is a push-pull unit composed of T2, R9, R10 and T4, and the main function of the output stage is to have a large voltage output amplitude, provide a certain output current to the load, and have small power consumption. At the same time, the output stage is provided with a feedback channel, which can not only ensure the output current capacity, but also eliminate crossover distortion. The complementary push-pull circuit composed of NPN and PNP transistors is used to drive the signal from the collector of T3. The output circuit works in the A and B states to eliminate crossover distortion. The bias circuit of this mode also has the function of temperature compensation.

[0038] The application internally contains a 3kΩ feedback resistor R8. The resistor converts input current into output voltage, input bias voltage is accessed through input resistance to control input current. The current passes through the 3kΩ feedback resistor and forms a voltage range of about ±20V at the output end.

[0039] When the input VIN=2Vpp, f=10kHz sine wave signal, T1 is turned on to provide bias current, T3 is turned on, the input signal is amplified by T3, and the collector output of T3 is amplified by the push-pull circuit composed of T2 and T4.

[0040] The overall circuit connection is as follows: The circuit is single power supply, the positive power supply (VCC) is connected to the lead-out end 4, 5, 6, and the ground (GND) is connected to the lead-out end 2, 3, 7, 8, which provides working voltage and ground loop for the entire circuit; the power supply end is also connected to C3 and C4 as power filter capacitors to filter out power supply noise and ensure stable power supply.

[0041] The input signal is connected from the lead-out end 1, first entering the first-stage common-emitter amplifier circuit composed of transistor T3; at the same time, the bias circuit composed of transistor T1, resistors R1, R2, and R5 is connected, the base of T1 is connected to VCC through R1 and R4 to obtain bias voltage, T1 works in an amplification state and provides bias current for T3 through R5, so that T3 is in a good static operating point, ensuring linear amplification.

[0042] The amplified signal at the collector of T3 is transmitted to the second-stage push-pull output circuit composed of T2, T4 (NPN and PNP complementary symmetric), R9, and R10; the circuit internally forms a feedback loop through resistors R7 and R8 and capacitor C8, one end of which is connected to the output end and the other end is connected to the inverting input end, and internally contains a 3kΩ feedback resistor, which converts input current into output voltage (output voltage range is about ±20V), and input bias voltage is accessed through input resistance to control input current, and the feedback design not only ensures output current capacity but also eliminates crossover distortion.

[0043] The push-pull output circuit (T2, T4, R9, R10) receives the T3 collector signal and performs power amplification, and finally outputs the signal from the lead-out end 9 to provide a large voltage output amplitude and a certain output current to the load, and the circuit works in Class A and Class B states, with low power consumption and temperature compensation.

[0044] Figure 2 And Figure 3 The external lead function diagram of the wide-bandwidth high-voltage amplifier is shown in the figure, the external size of the circuit is 27mm×17mm×6.5mm (excluding pins and flanges), the external area is only one-fifth of the PCB technology, and the weight is only one-third of the discrete device. The specific functions of each external pin are shown in Table 1.

[0045] Table 1 Lead arrangement

[0046] Although the embodiments of the present application have been described above with reference to the drawings, the present application is not limited to the above-described specific embodiments and areas of application, and the above-described specific embodiments are merely illustrative and are intended to guide the practice of the application, but are not limiting. Those of ordinary skill in the art, under the guidance of the specification, can make many forms without departing from the scope of the claims of the present application, which are all within the protection of the present application.

Claims

1. A wideband high-voltage transconductance derivative amplifier characterized by, The application relates to a two-stage amplifier circuit, which comprises a component carrier, a two-stage amplifier arranged on the component carrier, and a shell arranged outside the component carrier. The two-stage amplifier comprises a first-stage common-emitter amplifier circuit topology and a second-stage push-pull output topology. The first-stage common-emitter amplifier circuit topology comprises a transistor for amplifying an input signal, and a bias circuit connected to the transistor; the second-stage push-pull output topology receives an amplified electrode signal of the transistor, performs power amplification, and outputs a signal to an output end; and a feedback circuit is connected between the first-stage common-emitter amplifier circuit topology and the second-stage push-pull output topology.

2. A wideband high-voltage transconductance derivative amplifier according to claim 1, characterized in that, The second-stage push-pull output topology comprises two transistors, one of which is an NPN transistor and the other of which is a PNP transistor.

3. A wideband high-voltage transconductance derivative amplifier according to claim 1, characterized in that, The two-stage amplifier is a reverse amplifier.

4. A wideband high-voltage transconductance derivative amplifier according to claim 1, characterized in that, The two-stage amplifier adopts a hybrid integrated thick film process technology for layout design.

5. A wideband high-voltage transconductance derivative amplifier according to claim 1, characterized in that, The component carrier is a beryllium oxide substrate.

6. A wideband high-voltage transconductance derivative amplifier according to claim 1, characterized in that, The component carrier is welded to the shell by using a reflow soldering process.

7. A wideband high-voltage transconductance derivative amplifier according to claim 1, characterized in that, The shell is made of 10# steel.

8. A wideband high-voltage transconductance derivative amplifier according to claim 1, characterized in that, The legs of the two-stage amplifier circuit are arranged on one side, and the two-stage amplifier circuit is independently packaged in a bath tub.

9. A wideband high-voltage transconductance derivative amplifier according to claim 1, characterized in that, The bias circuit comprises a transistor T1, resistors R1, R2 and R5; the base of the transistor T1 is connected to a power supply through the resistors R1 and R4 to obtain a bias voltage; and the transistor T1 provides a bias current for a transistor T3 through the resistor R5.

10. A wideband high-voltage transconductance derivative amplifier according to claim 1, characterized in that, Filter capacitors are connected in parallel to the first-stage common-emitter amplifier circuit topology and the second-stage push-pull output topology.

Images