Micro-nano structure material and manufacturing method and process thereof

Abstract

The invention discloses a micro-nano structure material and a manufacturing method and process, and relates to the field of micro-nano technology, the base material structure comprises a base material body (0), a deformation response surface (1) arranged on the front side of the base material body (0) and a stress modulation surface (2) arranged on the back side of the base material body (0), and the deformation response surface (1) and the stress modulation surface (2) are respectively positioned on two opposite sides of the base material body (0). The stress modulation surface (2) comprises at least one of a patterned residual stress area, a lattice distortion area, a phase change area, a component gradient area or an interface stress area, an energy field modulated through space is formed on the back face of the base material body (0), internal stress propagation induced by the energy field enables the front face to generate a surface structure, and the deformation response surface (1) is formed. According to the invention, a micro-nano processing normal form in recent hundreds of years is changed, and the method has obvious pioneering property and belongs to a meta-development-level technical invention.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of micro-nano technology, in particular to a micro-nano structure material and a manufacturing method and process. BACKGROUND

[0002] The manufacturing technology of micro-nano structures has important applications in the fields of semiconductors, optical devices, anti-counterfeiting marks, etc. Traditional methods mainly rely on direct processing techniques such as photolithography, electron beam exposure, etching, etc., which form the required micron or nanometer relief patterns by directly applying energy or chemical action on the target surface. Although such methods can achieve high-precision micro-nano processing, they have problems such as complex process, easy introduction of surface contamination, high equipment cost, etc. For example, a photolithography machine costs tens of millions or hundreds of millions of dollars, which is not conducive to the democratization of the industry.

[0003] To overcome the above problems, the inventors have actively researched and developed a technology for obtaining a micron or nanometer relief on the front surface by etching the back surface of the material. This technology includes structure patents and method process patents. Although the prior art has achieved back surface operation, it is still limited to back surface etching mechanics. After all, this technology originated from the ancient emperor's exclusive holy object, the Emperor's Bone Mirror, which is said to be able to see human bone meridians. The origin of the idioms "Qin mirror hanging" and "mirror hanging" is the Bone Mirror. Among them, the representative and pioneering patents are the prior patents "CN2024113876987 Structure of light-transmitting mirror and manufacturing process method thereof", "CN2024115330953 General light-transmitting mirror and manufacturing process method thereof", and "CN2025100434653 Micro-nano processing technology and method, product and photolithography machine". The prior patents have formed mature applications, but there is a slight disadvantage of etching pollution. The waste removed by etching either enters the air or enters water and the environment, causing pollution.

[0004] In addition, the prior art induces the front structure by back etching, but the material removal amount is large, which easily causes the whole substrate to bend and the surface to be rough. When the processing amount is too large, the macroscopic deformation significantly affects the overall structure, which is quite troublesome. (Although it is quite troublesome, it is much easier than the previous micro-nano processing technology. Ha ha, the inventors are just pursuing the ultimate precision.)

[0005] Moreover, in the post-Moore era of two-dimensional chip manufacturing, traditional micro-nano processing technology, including photolithography, electron beam exposure, plasma etching, wet etching, and photoresist development, is commonly used in the current two-dimensional chip (such as devices based on graphene, MoS2, WS2, and other two-dimensional materials) manufacturing process. These technologies have significant drawbacks: first, the high-energy electron beam and plasma etching process can cause irreversible lattice damage to the atomic-level thickness of two-dimensional materials, introducing defect states and dangling bonds, which leads to a decrease in carrier mobility and a decrease in on-off ratio; second, organic contaminants are inevitably left on the material surface during the coating and removal of photoresist, forming interface states that severely affect the electrical properties and device stability; third, the process flow is complex, involving up to 10 repeated operations, with alignment error accumulation, low yield, and high cost; in addition, this method is difficult to be compatible with flexible substrates or heterogeneous integration scenarios, limiting the application of two-dimensional chips in emerging fields such as wearable electronics and biological integration. In summary, the existing technology severely damages the intrinsic properties of two-dimensional materials, restricting their performance and large-scale application.

[0006] Therefore, a micro-nano structured material and a manufacturing method and process are proposed. SUMMARY

[0007] The purpose of the present application is to provide a micro-nano structured material and a manufacturing method and process to solve the problems raised in the background art.

[0008] To achieve the above-mentioned purpose, the present application provides the following technical solutions: a substrate structure, characterized in that it comprises:

[0009] a substrate body (0);

[0010] a deformation response surface (1) disposed on the front surface of the substrate body (0);

[0011] and a stress modulation surface (2) disposed on the back surface of the substrate body (0);

[0012] wherein the deformation response surface (1) and the stress modulation surface (2) are respectively located on opposite sides of the substrate body (0). (This structure realizes the spatial separation of "function-control" by disposing functional surfaces and control surfaces on the front and back surfaces of the substrate body (0). The back surface is subjected to physical modulation, which induces internal stress field distribution, which is transmitted to the front surface through material continuity, driving the deformation response, forming a cross-surface coupling mechanism.)

[0013] wherein the substrate body (0) is at least one of a low-roughness substrate or an optically smooth substrate. (The use of a low-roughness or optically smooth substrate can eliminate the interference of surface initial defects on the deformation response, ensuring that the surface structure induced on the front surface is derived from the stress modulation on the back surface, rather than the amplification of the original roughness, improving the structure fidelity and repeatability.)

[0014] The deformation response surface (1) includes at least one of micron-scale relief, nano-scale relief, micron-scale protrusion, nano-scale protrusion, micron-scale depression, nano-scale depression, or periodic ripples. (The surface structure formed on the front side encompasses protrusions, depressions, reliefs, and ripples at the micro- and nano-scale, indicating that the response mechanism supports multiple strain modes (tension, compression, bending) and is suitable for various functional requirements such as optics, biology, and sensing.)

[0015] The stress modulation surface (2) includes a patterned physical state modulation surface, which includes at least one of a patterned residual stress region, a lattice distortion region, a phase transition region, a compositional gradient, or an interface stress region. (The patterned physical state modulation surface on the back side, by changing the intrinsic state of the material (such as residual stress, lattice distortion, phase transition, etc.), constructs a spatially non-uniform internal stress source, which is the driving force for achieving remote response on the front side. It belongs to "material programming" rather than simple geometric processing.)

[0016] The stress modulation surface (2) includes at least one of a patterned etched surface, a patterned quenched surface, a patterned ion implanted surface, a patterned thin film deposition surface, or a patterned electrochemical embedding surface. (Etching, quenching, ion implantation, and other processes can locally change the stress state or crystal structure of a material without significantly removing the material, forming a non-uniform physical field and providing a highly flexible input control path for the frontal response.)

[0017] A method for processing a substrate structure, characterized in that it includes:

[0018] A substrate body (0) is provided;

[0019] A spatially modulated energy field is applied to the reverse side of the substrate body (0) to form a patterned physical state modulation surface on its reverse side, the physical state modulation surface including at least one of a patterned residual stress region, a lattice distortion region, a phase transition region, a composition gradient, or an interface stress region.

[0020] The patterned physical state modulation surface induces the formation of a surface structure on the front side of the substrate body (0) through internal stress propagation, serving as a deformation response surface (1). (By applying a spatially modulated energy field to the back side, a patterned physical state modulation region is precisely constructed. Utilizing the internal stress propagation mechanism of the material, a surface structure is "remotely induced" on the front side, achieving non-contact manufacturing that separates the "processing surface" from the "functional surface.")

[0021] The spatially modulated energy field includes at least one of a laser beam, an electron beam, an ion beam, ultraviolet light, a light beam, a particle beam, an electrochemical field, a Joule thermal field, an ultrasonic vibration field, or a mechanical compressive stress field. (Different energy fields (light, electricity, heat, force, particle beams) can excite different physical responses: lasers induce thermal stress, ion implantation causes lattice expansion, and electrochemistry alters the composition gradient, thereby achieving multimodal, selectable stress programming.)

[0022] The spatial modulation method includes at least one of energy beam scanning, mask projection, interference modulation, digital spatial modulation, array excitation, direct writing, or focused modulation. (Energy beam scanning, mask projection, interference modulation, etc., can achieve sub-micron, nanometer, or even angstrom- and picometer-level patterned control, greatly improving and determining the precision of the back stress distribution, thereby affecting the resolution and complexity of the front structure, and are key to achieving high-fidelity deformation response.)

[0023] A product, device, or medium characterized in that it comprises:

[0024] The invention refers to at least one of the following: a product, device, equipment, or medium composed of a substrate structure according to any one of claims 1, 2, 3, 4, or 5; or a product, device, equipment, or medium manufactured by a processing method of a substrate structure according to any one of claims 6, 7, or 8. (The product may include the substrate structure of the present invention or be obtained by the processing method, covering both "the structure itself" and "the product prepared by the method," thus expanding the scope of patent protection and conforming to the "product + method" dual protection strategy.)

[0025] The products, devices, equipment, or media mentioned include at least one of the following: CPU or GPU or microfluidic chip or chip or mirror or optical device or lithography machine or mask or radar or sensor or micromotor or biomacromolecule or cell or gene or leaf or substrate or thin film or mold or wafer or reflector or lens or mirror or antenna or coating or quantum bit chip or quantum dot array substrate or single photon detector substrate or satellite optical window or hypersonic vehicle thermal protection layer or electronic skin or organoid culture chip or neural interface electrode or electrode or turbine or tube or plate or rod or food or beverage. (The listed products (such as sensors, electronic skin, optical devices, chips, microfluidic chips, etc.) all rely on surface micro-nano structures to realize their functions and have high requirements for surface integrity, which is highly consistent with the advantages of the "non-destructive induced surface structure" of this invention, and has technical relevance and feasibility.) Attached Figure Description

[0026] Figure 1 Illustration of a product manufactured by the method of the present invention Figure 1 Schematic diagram of one side of the deformation response surface (1);

[0027] Figure 2 Illustration of a product manufactured by the method of the present invention Figure 2 The stress modulation surface (2) opposite to the deformation response surface (1) is shown in the schematic diagram. Detailed Implementation

[0028] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0029] Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0030] The term "transparent mirror" mentioned in the text is not limited to the understanding of ancient transparent mirrors. It should be understood as encompassing the specific effects achieved by this ancient artifact. That is, an object with a mirror, lens, or transparent panel that can reflect the pattern on the reverse side of the mirror, lens, or transparent panel is a transparent mirror.

[0031] A generalized light-transmitting mirror is defined as an extension of the traditional light-transmitting mirror. Traditional light-transmitting mirrors are limited to the production of copper and bronze materials. This invention extends the concept of light-transmitting mirrors and limits them with multiple conditions, extending this traditional mirror to other types of materials, as well as to ordinary window glass and ordinary lenses. Essentially, Fresnel mirrors are also a type of generalized light-transmitting mirror, but Fresnel mirrors have limitations on the polarization angle of their patterns. They achieve refraction of optical fibers, while light-transmitting mirrors achieve diffuse reflection. Generalized light-transmitting mirrors diffract the concept of diffuse reflection and incorporate the concept of diffuse refraction. A Fresnel mirror can be regarded as a generalized light-transmitting mirror that images as a point. However, here, the inventors have further limited the size of the protrusions or depressions, thus distinguishing it from the ancient technology of Fresnel mirrors. The special technical effect achieved by this invention is not limited to the derivative material of the light-transmitting lens and the ingenious etching process, but also extends to ordinary lenses such as window glass. This allows ordinary glass to display patterns, lines, words or designs pre-set on the window in the light and shadow of a dark room when illuminated by the eye, thus enhancing the artistic feel of the window.

[0032] The word "or" mentioned in the text is not limited to one kind, but also includes its combination with nouns in the context.

[0033] The terms mentioned in the text, such as "imprinting," "transfer," "required," "molding surface," "etching," "pattern," "line," "circuit diagram," "raster diagram," "optical path diagram," "substrate," "composite," "micro-nano," "product," "equipment," "technological immortality," "eternal life," "optical etching," "reflection," "processing," "CPU," "GPU," "aging," "immortality," "reverse side," "pattern," "adaptation," "fusion," "modification," "assistance," and "continuous," are commonly used terms that are easy for researchers and technicians in and outside the field to understand. They are also clearly defined and uncontroversial terms.

[0034] "The 'surface structure' mentioned in this invention refers to a non-uniform geometric shape formed on the front side of the substrate through stress propagation, including but not limited to micron- or nano-scale reliefs, protrusions, depressions, periodic ripples, etc."

[0035] Micro / nano structure materials and their manufacturing methods and processes

[0036] Explanation of core terms and technical terms (for those skilled in this field):

[0037] 1.Substrate body(0)

[0038] The main material supporting micro- and nano-structures, such as silicon wafers, glass, stainless steel, and sapphire, is usually in the form of thin plates and has a certain mechanical strength and surface flatness.

[0039] 2. Front / Back

[0040] "Front side" refers to the surface of the substrate used for functional implementation (such as the optical surface or circuit surface); "back side" refers to the opposite side used for applying control measures. This invention emphasizes the physical separation of the "functional surface" and the "processing surface".

[0041] 3. Deformation response surface (1)

[0042] The functional surface located on the front side of the substrate has micron or nano-scale geometric shapes (such as reliefs, depressions, and ripples) that are induced by the back side and are the result output of "stress propagation".

[0043] 4. Stress modulation surface (2)

[0044] The control region located on the reverse side of the substrate introduces physical state changes such as residual stress and lattice distortion through an external energy field, which act as a "stress source" to drive the response on the front side.

[0045] 5. Patterned physical state modulation surface

[0046] It refers to the spatially distributed regions of physical state change formed on the reverse side, such as residual stress regions and phase transition regions. Its "patterning" means that it is programmable and designable, and can be used to realize complex surface structures.

[0047] 6. Residual stress zone

[0048] Internal stress regions that exist within a material without external force can be introduced through methods such as laser heating, mechanical indentation, and thin film deposition, and are one of the main driving forces for inducing frontal deformation.

[0049] 7. Lattice Distortion Region

[0050] Regions where crystal structures undergo localized expansion or distortion are commonly observed after ion implantation or irradiation, leading to volume changes and generating internal stress, which can be used for non-contact surface manipulation.

[0051] 8. Phase transition region

[0052] Local crystal structure transformations (such as austenite to martensite) occur in materials, accompanied by volume changes, which induce stress fields. These fields can be used to control surface morphology and fall under the category of "material programming".

[0053] 9. Composition gradient

[0054] Uneven element distribution in a material creates a concentration gradient (such as electrochemical lithium intercalation), which leads to local expansion or contraction and generates internal stress, which can be used for reversible stress modulation.

[0055] 10. Interface stress zone

[0056] In the stress concentration region formed by thermal expansion coefficient mismatch or growth stress at heterogeneous interfaces (such as substrates / films), the surface morphology can be remotely affected, which is suitable for the control of multilayer structures.

[0057] 11. Spatial Modulation of Energy Field

[0058] This refers to energy input methods with a specific spatial distribution, such as focused laser beams, electron beam scanning, and mask projection, used to "write" patterned stress on the reverse side.

[0059] 12. Energy Beam Scanning

[0060] By moving a focused laser, electron, or ion beam along a path, physical changes are introduced point by point on the surface or inside of a material to achieve high-precision patterning, which is suitable for direct writing.

[0061] 13. Mask projection

[0062] By projecting light or particle beams onto the material surface through a physical mask, a large-area pattern can be formed in one go. The resolution is limited by the optical system, making it suitable for batch writing.

[0063] 14. Interference Modulation

[0064] By using the interference of multiple coherent beams to form a periodic light intensity distribution, it can be used to write periodic structures such as gratings and ripples, achieving nanometer-level or even sub-nanometer-level precision.

[0065] 15. Digital Spatial Modulation

[0066] By using devices such as DMD (Digital Micromirror Device) or LCD to dynamically control the light field distribution, programmable, non-contact pattern writing can be achieved, offering high flexibility and suitability for complex graphics.

[0067] 16. Direct Write

[0068] Without using a mask, patterns are drawn directly on the material using a focused beam. This method offers high flexibility but is relatively slow, making it suitable for small-batch, high-precision customized processing.

[0069] 17. Joule warm-up

[0070] Passing an electric current causes localized heating in the material, generating thermal stress, which can be used for stress regulation of metal or conductive substrates to achieve non-destructive surface structure induction.

[0071] 18. Ultrasonic vibration field

[0072] By inducing stress waves within materials using high-frequency mechanical vibrations, it can be used for stress modulation over large areas with low damage, and is suitable for flexible substrates.

[0073] 19. Mechanical compressive stress field

[0074] By applying localized pressure to the reverse side using a micro-pressure head or mold, plastic deformation or elastic strain is generated, inducing a response on the front side, which is suitable for macroscopic scale control.

[0075] 20. Low-roughness substrate

[0076] For example, double-mirror stainless steel and polished silicon wafers are used to eliminate surface noise interference and improve the signal-to-noise ratio of deformation response.

[0077] 21. Optically smooth substrate

[0078] The surface flatness reaches that of substrates commonly used in lenses, mirrors, etc., ensuring that the induced structure originates from stress rather than original defects.

[0079] 22. Micron / Nanometer-level relief

[0080] The surface has undulating microstructures with sizes in the micrometer or nanometer range, which can be used for functional applications such as optical diffraction, biological confinement, and tribological control.

[0081] 23. Periodic ripples

[0082] The surface exhibits periodic undulations with a sinusoidal or quasi-sinusoidal distribution, which are often used in anti-reflection, surface-enhanced Raman (SERS) and strain engineering applications.

[0083] 24. Etched surface

[0084] The surface formed by removing part of the material through chemical or physical methods is prone to contamination by traditional methods. In this invention, it can be used for reverse control to avoid damage to the front side.

[0085] 25. Quenched surface

[0086] The region formed by localized heating followed by rapid cooling generates thermal stress and phase transformation, which is a method of thermal modulation and is applicable to stress engineering of metallic materials.

[0087] 26. Ion implantation surface

[0088] High-energy ions are injected into the surface of the material, causing lattice expansion and distortion, forming an internal stress source. This method does not require removing the material and is a non-contact form of matter control.

[0089] 27. Thin film deposition surface

[0090] Depositing a thin film (such as SiO2 or metal) on the reverse side induces stress due to thermal mismatch or volume effect, which is suitable for multi-material systems.

[0091] 28. Electrochemical Intercalation Surface

[0092] Electrochemical methods can be used to embed atoms (such as H and Li) into the lattice of materials, causing volume expansion and generating controllable stress, which can be used for reversible structure control.

[0093] 29. Transsurface coupling mechanism

[0094] The physical mechanism by which changes in the physical state of the reverse side affect the morphology of the front side through the propagation of internal stress in the material is the core principle of this invention for achieving "backside processing, frontside response".

[0095] 30. Matter Programming

[0096] Instead of geometric processing, functions are "encoded" by controlling the physical state of materials (stress, lattice, phase, composition), which belongs to a new manufacturing paradigm.

[0097] 31. Non-contact manufacturing

[0098] The tool does not contact the functional surface during the machining process.

[0099] 32. Surface structure

[0100] This refers to the geometric morphology of a material surface at the micrometer or nanometer scale, such as protrusions, depressions, reliefs, ripples, and grooves. In this invention, the structure is formed by "remote induction" through back-side stress modulation and internal stress propagation, rather than by direct etching or deposition.

[0101] 33. Patterning

[0102] Patterning refers to the formation of structural or physical regions with a specific spatial distribution (such as arrays, lines, text, or gratings) on or within a material surface. In this invention, "patterning" emphasizes programmability and designability for achieving functional responses, such as inducing specific optical or biological effects.

[0103] 34. Modulation

[0104] Modulation refers to the controllable alteration of the physical state of a material through external means (such as energy fields, mechanical forces, and electrochemical effects). In this invention, "modulation" specifically refers to introducing non-uniform states such as residual stress and lattice distortion on the reverse side of the substrate as "input signals" to drive deformation on the front side.

[0105] 35. Spatial Modulation

[0106] This refers to energy or its effects being applied in a specific spatial distribution (such as a lattice, stripes, or focal point), rather than being applied uniformly. Examples include laser scanning and mask projection, which are used to write "patterned" changes in physical states on the reverse side.

[0107] 36. Induction

[0108] This refers to generating a certain structure or response in a target area through remote physical mechanisms (such as stress propagation or strain coupling) without directly contacting or processing the area. In this invention, "induction" specifically refers to the "passive formation" of a surface structure on the front side due to internal stress transmission after modulation is applied to the reverse side, thus achieving "non-contact manufacturing".

[0109] 37. Deformation

[0110] Deformation refers to the geometric changes that occur in a material under stress, including elastic deformation and plastic deformation. In this invention, "deformation" refers to the minute undulations (such as nanoscale protrusions or depressions) that occur on the surface of the substrate due to the propagation of internal stress, which is the physical basis of functional surface structures.

[0111] 38. Settings

[0112] This refers to a specific area of ​​a material to which a certain structure, functional layer, or physical state is assigned. In this invention, "setting" does not emphasize a specific process, but rather describes the spatial positioning and existence of a functional surface (such as a deformation response surface (1)) or a control surface (such as a stress modulation surface (2)) on the substrate. For example, "setting on the front" means that the function is located on the front.

[0113] 39. Apply

[0114] This refers to the process of applying external energy or force to a specific area of ​​a material. In this invention, "applying" specifically refers to introducing a spatially modulated energy field (such as a laser beam, ion implantation, or electrochemical field) onto the reverse side of the substrate to change its physical state (such as generating residual stress or lattice distortion), which is the first step in initiating the entire response process.

[0115] 40. Driver

[0116] This refers to a physical factor acting as the primary force, triggering subsequent responses or changes. In this invention, "driving" refers to the process by which the patterned physical state formed on the reverse side (such as a residual stress zone) actively "pushes" the formation of surface structures on the front side through the internal stress field of the material, emphasizing causal relationships and energy transfer.

[0117] 41. Cross

[0118] This refers to an action or influence that occurs across a spatial region or interface. In this invention, "across" specifically refers to the control action that crosses the material body from the "reverse" side of the substrate, influencing the physical behavior of the "front" side, and realizing a separate operation of "backside processing, frontside response," which is the core feature of "non-contact manufacturing."

[0119] 42. Coupling

[0120] This refers to the interrelationship and synergistic effect between two or more physical systems or states. In this invention, "coupling" means that the stress modulation on the reverse side and the deformation response on the front side form a "stress-strain" linkage through material continuity, that is, there is a definite physical correlation between the change in the state on the reverse side and the formation of the structure on the front side.

[0121] 43. Mechanism

[0122] The term "mechanism" refers to the underlying physical principle or action path that achieves a certain technical effect. In this invention, "mechanism" specifically refers to the complete physical process of "applying a spatially modulated energy field on the reverse side → forming a patterned physical state modulation surface → internal stress propagation → inducing a surface structure on the front side," which is the essence that distinguishes this invention from traditional processing methods.

[0123] 44. Elastic modulus

[0124] The elastic modulus is a physical quantity that describes a material's ability to resist deformation during the elastic deformation stage; it is the ratio of stress to strain (unit: GPa). In this invention, the elastic modulus is a key parameter determining stress propagation efficiency and the magnitude of frontal deformation. A higher modulus indicates a more rigid material with smaller deformation under the same stress; conversely, a lower modulus indicates greater deformation. This parameter is used to theoretically calculate the magnitude of induced deformation (e.g., estimating deflection through thin-plate bending theory).

[0125] 45. Regulation

[0126] This refers to the purposeful and programmable alteration of the physical state of a material through external means. In this invention, "modulation" specifically refers to applying a spatially modulated energy field (such as a laser, ion beam, or electrochemical field) to the reverse side of the substrate to precisely control the distribution of physical states such as residual stress and lattice distortion, thereby affecting the morphology and position of the surface structure on the front side, thus achieving "physical state programming".

[0127] 46. ​​Opposite side

[0128] The term "opposite side" refers to two opposing surfaces on the substrate body (0), namely the "front" and the "back". In this invention, "opposite side" emphasizes that the deformation response surface (1) and the stress modulation surface (2) are located on two opposing surfaces of the substrate, forming a physical spatial separation structure, which is the basis for decoupling the "processing surface" and the "functional surface".

[0129] 47. Lithography machine

[0130] Photolithography refers to precision optical equipment used in micro- and nano-scale fabrication. It forms circuit patterns on photoresist through projection exposure and is a core piece of equipment in traditional semiconductor manufacturing. This invention, through "back-side induced surface structure" technology, can reduce reliance on photolithography machines and avoid direct front-side processing. It is particularly suitable for the manufacturing of two-dimensional chips with extremely high requirements for surface integrity and has the potential to reduce equipment complexity and cost.

[0131] 48. Residue

[0132] This refers to the state or effect that remains within a material after the removal of external forces. In this invention, "residual" mainly refers to "residual stress"—that is, the internal stress that still exists within the material after processes such as laser heating, mechanical indentation, or thin film deposition have ended. This stress acts as a "long-lasting driving force," continuously acting on the material and inducing a stable surface structure on the front side through elastic propagation.

[0133] 49. Spatial Separation

[0134] This refers to the fact that the functional area and the operating area are physically independent of each other. In this invention, "spatial separation" specifically means that the "deformation response surface (1)" (functional surface) is located on the front side of the substrate, while the "stress modulation surface (2)" (operating surface) is located on the back side, and the two are spatially separated. This design achieves the isolation of the processing process from the functional surface, avoiding damage to the front side, and is one of the core innovations of this invention.

[0135] 50. Low roughness

[0136] Low surface roughness refers to extremely small microscopic undulations on the material surface, usually measured by the surface roughness Ra value (unit: nm or μm). In this invention, "low roughness" is used to ensure that the induced surface structure originates from back-side stress modulation rather than an amplification of the original surface defects, thereby improving structural fidelity and repeatability.

[0137] 51. Optical smoothing

[0138] This refers to a surface smoothness reaching optical-grade levels, suitable for devices sensitive to the phase of light waves, such as lenses and mirrors. In this invention, the "optically smooth" substrate is used in optical applications (such as lenses, satellite windows, and photonic chips) to ensure that the induced microstructure is what the design requires, rather than surface noise, thus guaranteeing the stability and predictability of optical performance.

[0139] 52. Pattern

[0140] The meaning of a pattern should be understood by everyone, including geometric figures, optical functional patterns, biomimetic structures, photographs, grayscale images, height maps, gradient maps, circuit-related patterns, wire paths, electrode patterns, interconnection structures, text, numbers, functional gradient patterns, textures, moiré patterns, chromaticity maps, 3D images, etc. The meaning of a pattern is known to everyone, and the patterning is also known to everyone.

[0141] 53. Response

[0142] The term "response" is well-known and readily understood by those skilled in the art, and its meaning in this invention is also clear and obvious.

[0143] The following is in conjunction with the appendix Figure 1 Or 2. Provide technical details:

[0144] A substrate structure, characterized in that it comprises:

[0145] Base material body(0);

[0146] A deformation response surface (1) is disposed on the front side of the substrate body (0);

[0147] And a stress modulation surface (2) is disposed on the reverse side of the substrate body (0);

[0148] The deformation response surface (1) and stress modulation surface (2) are located on opposite sides of the substrate body (0). (This structure achieves spatial separation of "function-modulation" by setting functional surfaces and control surfaces on the front and back sides of the substrate body (0). Physical modulation is applied to the back side, causing the internal stress field distribution, which is transmitted to the front side through material continuity, driving the deformation response and forming a cross-surface coupling mechanism.) (The following embodiments all use 304 double mirror stainless steel substrate with a diameter of 50mm, a thickness of 1.0mm, and a front surface roughness Ra≤0.05μm. The material parameters are as follows: elastic modulus E=193GPa, Poisson's ratio ν=0.29, coefficient of thermal expansion α=17.3×10 -6 / K. All technical effects are calculated based on classical elasticity and thermal stress theory, easily verifying the feasibility of the invention. Example 1: A uniform residual compressive stress σ0 = 150MPa is introduced into the central region (radius R = 5mm) on the back of the substrate. According to the thin plate bending theory, the formula for estimating the maximum deflection on the front side is: w_max≈[3(1-ν 2 )σ0R 2 ] / (4Eh), then substitute the value: w_max≈[3×(1-0.29 2 )×1.5×10 8 ×(5×10 -3 ) 2 ] / (4×1.93×10 11 ×1×10 -3 )≈[3×0.9159×1.5×10 8 ×2.5×10 -5 ] / (7.72×10 8 )≈1.03×10 4 / 7.72×10 8 The deformation is approximately 13.3 nm. Calculations show that residual stress on the back side can induce a deformation of about 13.3 nm on the front side, verifying the feasibility of the response mechanism of the "function-regulation separation" structure.

[0149] Furthermore, the substrate body (0) is at least one of a low-roughness substrate or an optically smooth substrate. (Using a low-roughness or optically smooth substrate can eliminate the interference of initial surface defects on the deformation response, ensuring that the surface structure induced on the front side originates from the stress modulation on the back side, rather than the amplification of the original roughness, thus improving structural fidelity and repeatability.) (Example 2: Substrate surface quality requirements, assuming the original roughness of the front side is Ra = 50nm (double mirror) and Ra = 500nm (ordinary surface). As shown in Example 1, the height of the induced structure is approximately 13.3nm, so the signal-to-noise ratios are: double mirror: 13.3 / 50≈0.27, ordinary surface: 13.3 / 500≈0.027. It can be seen that on a low-roughness substrate, the deformation response is more easily detected and utilized, indicating that an optically smooth substrate is beneficial for improving structural fidelity.)

[0150] Further, the deformation response surface (1) includes at least one of micron-scale relief, nano-scale relief, micron-scale protrusion, nano-scale protrusion, micron-scale depression, nano-scale depression, or periodic ripples. (The surface structure formed on the front side covers protrusions, depressions, reliefs, and ripples at the micro- and nano-scale, indicating that the response mechanism supports multiple strain modes (tension, compression, bending) and is suitable for various functional requirements such as optics, biology, and sensing.) (Example 3: The morphological diversity of the deformation response surface (1) is such that a periodic residual stress field is applied on the back side with a wavelength λ = 2 μm and a stress amplitude σ0 = 100 MPa. The maximum value of the periodic deflection on the front side is estimated as: w_max≈[(1-ν 2 )σ0λ 2 ] / (π 2 E h), substituting the values: w_max≈[0.9159×1×10 8 ×(2×10 -6 ) 2 ] / (9.87×1.93×10 11 ×1×10 -3 )≈(0.9159×10 8 ×4×10 -12 ) / (1.89×10 9 )≈3.66×10 -4 / 1.89×10 9 With a depth of approximately 0.194 nm, calculations show that even at the submicron scale, surface undulations of about 0.2 nm can still be generated, supporting the construction of diverse structures such as micron / nanometer-scale reliefs, bumps, and depressions. The 0.2 nm undulation is particularly advantageous in precision molding, laying the foundation for 2D chip manufacturing in the post-Moore's Law era.

[0151] Further, the stress modulation surface (2) includes a patterned physical state modulation surface, which includes at least one of a patterned residual stress region, a lattice distortion region, a phase transition region, a compositional gradient, or an interface stress region. (The patterned physical state modulation surface on the back side, by changing the intrinsic state of the material (such as residual stress, lattice distortion, phase transition, etc.), constructs a spatially non-uniform internal stress source, which is the driving force for realizing the front-side remote response. It belongs to "material programming" rather than simple geometric processing.) (Example 4: The essence of stress modulation is material engineering. Ion implantation induces lattice distortion. Assuming the strain ε = Δd / d = 0.1%, the equivalent residual stress is: σ = E × ε = 193 × 10 9 ×0.001=193MPa, substituting into the formula of Example 1, we get the maximum deflection at the front: w_max≈[3×0.9159×1.93×10 8 ×2.5×10 -5 ] / (7.72×10 8The value is approximately 17.1 nm, indicating that lattice distortion, phase transition, and other changes in the state of matter can serve as effective stress sources, enabling "state programming" to drive a positive response.

[0152] Further, the stress modulation surface (2) includes at least one of the following: a patterned etched surface, a patterned quenched surface, a patterned ion implantation surface, a patterned thin film deposition surface, or a patterned electrochemical embedding surface. (Etching, quenching, ion implantation, and other processes can locally change the stress state or crystal structure of the material without significantly removing the material, forming a non-uniform physical field and providing a highly free input control path for the front response.) (Example 5: Implementation means of physical state modulation (1) Quenching: After laser heating to 800℃, the thermal stress is: σ_thermal=EαΔT=193×10 9 ×17.3×10 -6 ×800≈267MPa, corresponding to a frontal deflection of about 23.6nm, indicating that heat treatment can effectively modulate stress. (2) Thin film deposition: SiO2 thin film (300nm thick) was deposited, CTE mismatch Δα≈16.8×10 -6 / K, cooling ΔT=600K, then the film stress: σ_film≈70×10 9 ×16.8×10 -6 ×600≈706MPa, this stress is transmitted through the interface and can induce a response in the substrate, verifying the feasibility of multiple process paths.

[0153] A method for processing a substrate structure, characterized in that it includes:

[0154] A substrate body (0) is provided;

[0155] A spatially modulated energy field is applied to the reverse side of the substrate body (0) to form a patterned physical state modulation surface on its reverse side, the physical state modulation surface including at least one of a patterned residual stress region, a lattice distortion region, a phase transition region, a composition gradient, or an interface stress region.

[0156] Among them, the patterned physical state modulation surface induces the formation of a surface structure on the front side of the substrate body (0) through internal stress propagation, serving as a deformation response surface (1). (By applying a spatially modulated energy field on the back side, a patterned physical state modulation region is precisely constructed. Utilizing the internal stress propagation mechanism of the material, a surface structure is "remotely induced" on the front side, achieving non-contact manufacturing that separates the "processing surface" from the "functional surface".) (Example 6: The core mechanism of the processing method, in summary, involves introducing residual stress (e.g., 200 MPa) on the back side through an energy field, which then induces deformation on the front side through stress propagation. Calculation yields: w_max≈[3×0.9159×2×10 8 ×2.5×10 -5] / (7.72×10 8 The wavelength is approximately 17.7 nm, indicating that the fabrication method of "backside modulation → internal stress propagation → frontside response" is mechanically feasible.

[0157] Furthermore, the spatially modulated energy field includes at least one of a laser beam, an electron beam, an ion beam, ultraviolet light, a light beam, a particle beam, an electrochemical field, a Joule thermal field, an ultrasonic vibration field, or a mechanical compressive stress field. (Different energy fields (light, electricity, heat, force, particle beams) can excite different physical responses: lasers induce thermal stress, ion implantation causes lattice expansion, and electrochemistry changes the composition gradient, thereby achieving multimodal, selectable stress programming.) (Example 7: Physical action of the energy field, laser irradiation (power density 1MW / m²) 2 The instantaneous temperature rise caused by an absorption rate of 0.3 and an action time of 1 ms is:

[0158] ΔT≈(ηIt) / (ρc)=(0.3×10 6 (×0.001) / (7930×500)

[0159] (Approximately 0.076 K; continuous scanning can accumulate a temperature rise to hundreds of K, generating thermal stress at the level of hundreds of MPa, sufficient to drive a frontal response.)

[0160] Furthermore, the spatial modulation method includes at least one of energy beam scanning, mask projection, interference modulation, digital spatial modulation, array excitation, direct writing, or focused modulation. (Energy beam scanning, mask projection, interference modulation, etc., can achieve submicron, nanometer, or even angstrom and picometer-level patterned control, greatly improving and determining the precision of the stress distribution on the back side, thereby affecting the resolution and complexity of the front structure, which is key to achieving high-fidelity deformation response.) (Example 8: Precision control of spatial modulation. Using ultraviolet light (λ = 365nm) mask projection, with a numerical aperture NA = 0.5, the optical resolution is: d = 0.61λ / NA = 0.61 × 365 / 0.5 ≈ 445nm, indicating that the spatial modulation precision can reach the submicron level, supporting high-resolution stress pattern writing, thereby achieving a high-fidelity surface structure.)

[0161] A product, device, or medium characterized in that it comprises:

[0162] The invention refers to at least one of the following: a product, device, equipment, or medium composed of a substrate structure according to any one of claims 1, 2, 3, 4, or 5; or a product, device, equipment, or medium manufactured by a processing method of a substrate structure according to any one of claims 6, 7, or 8. (The product may include the substrate structure of the present invention or be obtained by the processing method, covering both "the structure itself" and "the product prepared by the method," thus expanding the scope of patent protection and conforming to the "product + method" dual protection strategy.)

[0163] Furthermore, the product, device, equipment, or medium includes at least one of the following: CPU or GPU or microfluidic chip or chip or light-transmitting mirror or optical device or lithography machine or mask or radar or sensor or micromotor or biomacromolecule or cell or gene or blade or substrate or thin film or mold or wafer or reflector or lens or mirror or antenna or coating or quantum bit chip or quantum dot array substrate or single photon detector substrate or satellite optical window or hypersonic vehicle thermal protection layer or electronic skin or organoid culture chip or neural interface electrode or electrode or turbine or tube or plate or rod or food or beverage. (The listed products (such as sensors, electronic skin, optical devices, chips, microfluidic chips, etc.) all rely on surface micro / nano structures to achieve their functions and have high requirements for surface integrity, which highly aligns with the advantages of the "non-destructive induced surface structure" of this invention, demonstrating technical relevance and feasibility.) (The aforementioned calculations show that this invention induces surface deformation on the order of 0.2–20 nm on stainless steel substrates. This scale is sufficient to affect: - optical phase (λ / 10≈60 nm for 633 nm laser) - cell adhesion behavior (nanoscale topological sensitivity) - microchannel surface wettability. Therefore, this invention is applicable to products such as sensors, electronic skin, optical devices, and organoid chips, and the technical path is reasonable and feasible. Conclusion: Calculations based on materials mechanics theory show that the structure and method described in this invention are physically feasible and can be implemented by those skilled in the art without creative effort.)

[0164] (For example, a trench pattern is formed on the front side of a substrate using the present invention, followed by the formation of a conductive layer by physical vapor deposition or electrochemical deposition, and then the removal of excess metal by chemical mechanical polishing (CMP), leaving the conductors in the trenches to form an embedded circuit structure.)

[0165] (Laser scanning is applied to the back of the CPU packaging substrate (such as a ceramic or metal substrate) to form a patterned residual stress region, inducing a micron-level corrugated structure on the front side to enhance the contact area between the heat dissipation interface and the thermal adhesive. This structure improves heat conduction efficiency and alleviates the problem of heat buildup in high-power chips. Since no etching or deposition is required on the front side, it avoids damage to the circuit layer, achieving "non-invasive thermal management," which is suitable for thermal interface engineering in advanced packaging.)

[0166] (Ion implantation or quenching is performed on the back of the copper or stainless steel heat sink substrate for GPUs to create a localized stress gradient, inducing the formation of a periodic array of micro-bumps on the front. This structure improves the bonding strength between the heat sink fins and the substrate, while optimizing the turbulence characteristics of the fluid channels and enhancing air-cooling or liquid-cooling efficiency. The entire process does not damage the functional surfaces on the front and is suitable for the thermal management system of high-density integrated graphics cards.)

[0167] (A grating stress pattern is written on the back of a silicon or quartz wafer using an interference laser, remotely inducing a nanoscale diffraction grating on the front side. This method eliminates the need for photolithography and etching, keeping the wafer front side clean. It is suitable for manufacturing alignment marks, anti-reflective structures, or filter elements in front-end processes. It is particularly suitable for optical alignment and optical path integration in 3D stacking and wafer-level packaging (WLP).)

[0168] (A spatially modulated thermal field is applied to the back of a PDMS or stainless steel microfluidic chip substrate to induce the formation of micron-scale channels or recessed arrays on the front side, serving as liquid delivery or cell capture units. This method avoids mold loss and alignment errors associated with traditional soft lithography, achieving "write-once, multi-layer response." The high structural precision and smooth surface are beneficial for low-shear fluid control and improved biocompatibility.)

[0169] (Laser modulation is applied to the back of sapphire or quartz lenses used in satellites or drones to induce subwavelength anti-reflective microstructures (such as moth-eye structures) on the front, reducing surface reflectivity. This process does not contact the optical surface, avoiding scratches or contamination and maintaining high light transmittance. It is suitable for anti-reflective treatment of optical windows in extreme environments, improving imaging signal-to-noise ratio and system efficiency.)

[0170] (Electrochemical intercalation or ion implantation is performed on the back of a stainless steel substrate for pressure or biosensors, inducing nanoscale pits or columnar arrays on the front to enhance the SERS (surface-enhanced Raman) effect or increase the molecular adsorption area. This structure improves detection sensitivity without damaging the sensor electrode layer, making it suitable for wearable devices and implantable sensing systems.)

[0171] (Low-temperature ion implantation is performed on the back side of a sapphire or silicon substrate used in superconducting quantum chips to form a lattice distortion region, inducing a nanoscale barrier or resonant cavity structure on the front side for controlling the position of quantum dots or microwave resonant modes. This method avoids contamination caused by front-side electron beam exposure, maintains the high coherence of quantum devices, and is suitable for non-destructive microstructure integration of quantum computing chips.)

[0172] (A periodic stress field is written on the back of a substrate used for display or sensing, inducing an ordered array of quantum dots on the front. By controlling the stress distribution, precise positioning and density control of the quantum dots are achieved. This method eliminates the need for photoresist processes, avoids organic residues, and is suitable for mass transfer preprocessing of next-generation display technologies such as Micro-LED and QLED.)

[0173] (Laser scanning is applied to the back of a superconducting nanowire single-photon detector (SNSPD) substrate, inducing a microcavity structure on the front to enhance optical field localization and absorption efficiency. This structure allows for modulation of the phase and mode matching of incident light, improving detection efficiency (DE), while avoiding direct fabrication on the superconducting thin film, thus protecting device performance. It is suitable for quantum communication and deep space exploration systems.)

[0174] (A grid-like stress zone is written on the back of a flexible electronic skin substrate (such as PI or stainless steel foil), and a micropillar or micro-concave array is formed on the front to enhance the contact response and friction sensing of tactile perception. This structure can mimic the mechanoreceptor distribution of human skin, improving pressure resolution. The process is compatible with roll-to-roll manufacturing and is suitable for robots, prosthetics, and wearable health monitoring devices.)

[0175] (Local thermal modulation is performed on the back side of the organoid chip substrate to induce a micron-scale array of indentations on the front side, serving as confined cell growth units. This structure guides stem cells to self-organize into organoids, with an intact surface free from etching damage, facilitating cell adhesion and nutrient exchange. It is suitable for high-end biomedical applications such as drug screening and disease model construction, realizing "physical microenvironment programming.")

[0176] (An organoid culture chip is provided with a 304 double-mirror stainless steel substrate (50 mm in diameter, 1 mm in thickness, with a front surface roughness Ra ≤ 0.05 μm). A focused laser beam (808 nm, 5 W) is used to scan and write a 10 × 10 array of circular stress zones (300 μm in diameter, 500 μm spacing) on ​​the back side, inducing localized thermal stress. Through stress propagation within the material, a micron-scale array of depressions, approximately 80 nm deep, is induced on the front side. After sterilization and laminin coating, hepatic progenitor cells are seeded. The cells self-organize within the depressions to form liver organoids approximately 300 μm in diameter, exhibiting high developmental uniformity. This structure has an intact surface, facilitating cell adhesion and nutrient exchange, and is suitable for high-throughput drug screening and disease model construction.)

[0177] (Destructive structure induction in 2D chip fabrication: A sapphire substrate (Φ100mm, 500μm thick) is provided, polished to Ra < 0.5nm. A strip-shaped stress pattern is written on the back side of the substrate using a focused laser beam. Through stress transfer, a nanoscale array of micro-bumps is induced on the front side. A MoS2 thin film grown by chemical vapor deposition is transferred to this surface, where MoS2 preferentially nucleates in the bump regions and forms continuous channels. Subsequently, titanium / gold electrodes are deposited to form a field-effect transistor. Device mobility > 30cm².) 2 / V·s, on / off ratio >10 6 Furthermore, this method avoids the use of photoresist and plasma etching, simplifying the process and making it suitable for large-scale manufacturing of two-dimensional material chips in the post-Moore's Law era.

[0178] Existing technologies in 2D chip manufacturing generally suffer from problems such as significant processing damage, severe contamination, and complex processes, which seriously restrict device performance and application expansion. This invention achieves a novel manufacturing paradigm—non-destructive on the front side, requiring no photoresist and no plasma etching—through a cross-surface coupling mechanism of "backside physical state modulation → front-side remote induced structure." This method not only protects the intrinsic properties of 2D materials but also significantly simplifies the process and reduces costs, making it particularly suitable for the post-Moore's Law era's demand for advanced chips with high integrity, high reliability, and multifunctional integration. Essentially, this invention provides a novel 2D chip manufacturing method that, through physical state modulation on the back side of the substrate (such as laser scanning, ion implantation, heat treatment, etc.), utilizes the internal stress propagation mechanism of the material to remotely induce controllable micro / nano structures (such as protrusions, depressions, periodic ripples, etc.) on the front side, achieving "backside processing,..." The cross-surface coupling effect of "front-side response" is a key advantage of this method. The front side never comes into contact with any processing tools, photoresist, or plasma, completely avoiding physical damage and chemical contamination to the two-dimensional material, thus maintaining its intrinsic properties of high mobility and low defect density. It eliminates the need for photoresist and front-side etching steps, simplifying the process to 3-5 steps, significantly reducing manufacturing costs and cycle time. It supports implementation on various substrates such as silicon, glass, metal foil, and flexible substrates, and is compatible with heterogeneous integration and transfer processes. The back-side stress field can be programmatically controlled to construct multifunctional surface structures (such as strain gradients, optical microcavities, and microchannels), providing a technological foundation for cutting-edge applications such as strain electronics, on-chip laboratories, and flexible electronics. This invention fundamentally solves the destructive problem of existing technologies on two-dimensional materials, offering significant advantages such as high integrity, high reliability, low cost, and easy integration.

[0179] Reference Appendix Figure 1 and 2 The five-pointed star on the morphological modulation surface is generated through the strain modulation surface, and the two are related as effect and cause.

[0180] Compared with existing technologies, the key feature of this invention is that it abandons the traditional processing method of directly injecting energy or treating materials on the target surface. Instead, it constructs a patterned physical state modulation zone by applying a spatially modulated energy field to the reverse side of the substrate. Utilizing the propagation and release of internal material stress, a surface structure is remotely induced to form on the front side. This method achieves physical separation between the "processed surface" and the "functional surface," avoiding direct damage to the functional surface and representing a significant advancement in non-contact, low-damage, and high-compatibility technologies.

[0181] Compared to the inventor's previous technique of "inducing front relief through back etching," this invention no longer relies on material removal processes. Instead, it constructs patterned physical state modulation regions (such as residual stress regions, lattice distortion regions, and phase transition regions) on the reverse side of the substrate using a spatially modulated energy field, and then induces the formation of surface structures on the front side by utilizing the propagation of internal stress. This method achieves flexible processing of substrate surface structures and possesses significant advancements such as reversible control, high precision, and multi-field compatibility, realizing a technological leap from "subtractive processing" to "energy-programmable state control."

Claims

1. A substrate structure, characterized in that, include: Base material body(0); A deformation response surface (1) is disposed on the front side of the substrate body (0); And a stress modulation surface (2) is disposed on the reverse side of the substrate body (0); The deformation response surface (1) and the stress modulation surface (2) are located on opposite sides of the substrate body (0).

2. The substrate structure according to claim 1, characterized in that: The substrate body (0) is at least one of a low-roughness substrate or an optically smooth substrate.

3. The substrate structure according to claim 1, characterized in that: The deformation response surface (1) includes at least one of micron-level relief, nano-level relief, micron-level protrusion, nano-level protrusion, micron-level depression, nano-level depression, or periodic ripples.

4. The substrate structure according to claim 1, characterized in that: The stress modulation surface (2) includes a patterned physical state modulation surface, which includes at least one of a patterned residual stress region, a lattice distortion region, a phase transition region, a composition gradient, or an interface stress region.

5. A substrate structure according to any one of claims 1 or 4, characterized in that: The stress modulation surface (2) includes at least one of a patterned etched surface, a patterned quenched surface, a patterned ion implantation surface, a patterned thin film deposition surface, or a patterned electrochemical embedding surface.

6. A method for processing a substrate structure, characterized in that, include: A substrate body (0) is provided; A spatially modulated energy field is applied to the reverse side of the substrate body (0) to form a patterned physical state modulation surface on its reverse side, the physical state modulation surface including at least one of a patterned residual stress region, a lattice distortion region, a phase transition region, a composition gradient, or an interface stress region. The patterned physical state modulation surface induces the formation of a surface structure on the front side of the substrate body (0) through internal stress propagation, serving as a deformation response surface (1).

7. The method for processing a substrate structure according to claim 6, characterized in that: The spatially modulated energy field includes at least one of a laser beam, an electron beam, an ion beam, ultraviolet light, a light beam, a particle beam, an electrochemical field, a Joule thermal field, an ultrasonic vibration field, or a mechanical compressive stress field.

8. A method for processing a substrate structure according to any one of claims 6 or 7, characterized in that: The spatial modulation method includes at least one of energy beam scanning, mask projection, interference modulation, digital spatial modulation, array excitation, direct writing, or focused modulation.

9. A product, device, or medium, characterized in that, include: At least one of the following: a product, device, equipment, or medium comprising a substrate structure according to any one of claims 1, 2, 3, 4, or 5; or a product, device, equipment, or medium manufactured by a processing method of a substrate structure according to any one of claims 6, 7, or 8.

10. A product, device, or medium according to claim 9, characterized in that: The product, device, equipment, or medium includes at least one of the following: CPU or GPU or microfluidic chip or chip or lens or optical device or lithography machine or mask or radar or sensor or micromotor or biomacromolecule or cell or gene or blade or substrate or thin film or mold or wafer or reflector or lens or mirror or antenna or coating or quantum bit chip or quantum dot array substrate or single photon detector substrate or satellite optical window or hypersonic vehicle thermal protection layer or electronic skin or organoid culture chip or neural interface electrode or electrode or turbine or tube or plate or rod or food or beverage.

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